KR20250027657A - 반도체 장치용 본딩 와이어 - Google Patents

반도체 장치용 본딩 와이어 Download PDF

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Publication number
KR20250027657A
KR20250027657A KR1020247041948A KR20247041948A KR20250027657A KR 20250027657 A KR20250027657 A KR 20250027657A KR 1020247041948 A KR1020247041948 A KR 1020247041948A KR 20247041948 A KR20247041948 A KR 20247041948A KR 20250027657 A KR20250027657 A KR 20250027657A
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KR
South Korea
Prior art keywords
wire
less
concentration
bonding
depth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247041948A
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English (en)
Korean (ko)
Inventor
도모히로 우노
다이조 오다
모토키 에토
Original Assignee
닛테츠 케미컬 앤드 머티리얼 가부시키가이샤
닛데쓰마이크로메탈가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤, 닛데쓰마이크로메탈가부시키가이샤 filed Critical 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤
Publication of KR20250027657A publication Critical patent/KR20250027657A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203—Measuring back scattering
    • H01L24/44—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/227—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
    • G01N23/2276—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM] using the Auger effect, e.g. Auger electron spectroscopy [AES]
    • H01L24/43—
    • H01L24/78—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07555—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
    • G01N2223/053—Investigating materials by wave or particle radiation by diffraction, scatter or reflection back scatter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
    • G01N2223/056—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction
    • G01N2223/0565—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction diffraction of electrons, e.g. LEED
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G01N2223/086—Auger electrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/10—Different kinds of radiation or particles
    • G01N2223/102—Different kinds of radiation or particles beta or electrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/641—Specific applications or type of materials particle sizing
    • H01L2224/43826—
    • H01L2224/45147—
    • H01L2224/4851—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/535—Shapes of outermost layers of multilayered bond wires, e.g. coating not being conformal on a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Wire Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
KR1020247041948A 2022-06-24 2023-06-21 반도체 장치용 본딩 와이어 Pending KR20250027657A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022101612 2022-06-24
JPJP-P-2022-101612 2022-06-24
PCT/JP2023/022861 WO2023249037A1 (ja) 2022-06-24 2023-06-21 半導体装置用ボンディングワイヤ

Publications (1)

Publication Number Publication Date
KR20250027657A true KR20250027657A (ko) 2025-02-27

Family

ID=89379961

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247041948A Pending KR20250027657A (ko) 2022-06-24 2023-06-21 반도체 장치용 본딩 와이어

Country Status (7)

Country Link
US (1) US20250372565A1 (https=)
EP (1) EP4546401A1 (https=)
JP (1) JPWO2023249037A1 (https=)
KR (1) KR20250027657A (https=)
CN (1) CN119422234A (https=)
TW (1) TW202409305A (https=)
WO (1) WO2023249037A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148543A (ja) 1984-08-10 1986-03-10 Sumitomo Electric Ind Ltd 半導体素子結線用銅合金線
JP2005167020A (ja) 2003-12-03 2005-06-23 Sumitomo Electric Ind Ltd ボンディングワイヤーおよびそれを使用した集積回路デバイス
WO2017013796A1 (ja) 2015-07-23 2017-01-26 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
WO2017221770A1 (ja) 2016-06-20 2017-12-28 日鉄住金マイクロメタル株式会社 半導体装置用銅合金ボンディングワイヤ
JP2018503743A (ja) 2014-12-22 2018-02-08 ヘレウス マテリアルズ シンガポール ピーティーイー． リミテッド ニッケルを含む耐食性および耐湿性銅系ボンディングワイヤ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148534A (ja) 1984-08-15 1986-03-10 Toshiba Corp 線材加熱炉
JPS6297360A (ja) * 1985-10-24 1987-05-06 Mitsubishi Metal Corp 半導体装置のボンデイングワイヤ用表面被覆高純度銅極細線
JP2004064033A (ja) * 2001-10-23 2004-02-26 Sumitomo Electric Wintec Inc ボンディングワイヤー
JP4672373B2 (ja) * 2005-01-05 2011-04-20 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ
US8102061B2 (en) * 2007-07-24 2012-01-24 Nippon Steel Materials Co., Ltd. Semiconductor device bonding wire and wire bonding method
JP2020150116A (ja) 2019-03-13 2020-09-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148543A (ja) 1984-08-10 1986-03-10 Sumitomo Electric Ind Ltd 半導体素子結線用銅合金線
JP2005167020A (ja) 2003-12-03 2005-06-23 Sumitomo Electric Ind Ltd ボンディングワイヤーおよびそれを使用した集積回路デバイス
JP2018503743A (ja) 2014-12-22 2018-02-08 ヘレウス マテリアルズ シンガポール ピーティーイー． リミテッド ニッケルを含む耐食性および耐湿性銅系ボンディングワイヤ
WO2017013796A1 (ja) 2015-07-23 2017-01-26 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
WO2017221770A1 (ja) 2016-06-20 2017-12-28 日鉄住金マイクロメタル株式会社 半導体装置用銅合金ボンディングワイヤ

Also Published As

Publication number Publication date
TW202409305A (zh) 2024-03-01
JPWO2023249037A1 (https=) 2023-12-28
CN119422234A (zh) 2025-02-11
WO2023249037A1 (ja) 2023-12-28
US20250372565A1 (en) 2025-12-04
EP4546401A1 (en) 2025-04-30

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