KR20250009957A - 감방사선성 수지 조성물, 패턴 형성 방법, 감방사선성 산 발생제 및 산 확산 제어제 - Google Patents

감방사선성 수지 조성물, 패턴 형성 방법, 감방사선성 산 발생제 및 산 확산 제어제 Download PDF

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Publication number
KR20250009957A
KR20250009957A KR1020247034612A KR20247034612A KR20250009957A KR 20250009957 A KR20250009957 A KR 20250009957A KR 1020247034612 A KR1020247034612 A KR 1020247034612A KR 20247034612 A KR20247034612 A KR 20247034612A KR 20250009957 A KR20250009957 A KR 20250009957A
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South Korea
Prior art keywords
group
carbon atoms
radiation
atom
resin composition
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KR1020247034612A
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English (en)
Korean (ko)
Inventor
다쿠히로 다니구치
가츠아키 니시코리
나츠코 기노시타
가즈야 기리야마
Original Assignee
제이에스알 가부시끼가이샤
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Publication of KR20250009957A publication Critical patent/KR20250009957A/ko
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020247034612A 2022-05-20 2023-02-22 감방사선성 수지 조성물, 패턴 형성 방법, 감방사선성 산 발생제 및 산 확산 제어제 Pending KR20250009957A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022082729 2022-05-20
JPJP-P-2022-082729 2022-05-20
PCT/JP2023/006542 WO2023223624A1 (ja) 2022-05-20 2023-02-22 感放射線性樹脂組成物、パターン形成方法、感放射線性酸発生剤、及び、酸拡散制御剤

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Publication Number Publication Date
KR20250009957A true KR20250009957A (ko) 2025-01-20

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KR1020247034612A Pending KR20250009957A (ko) 2022-05-20 2023-02-22 감방사선성 수지 조성물, 패턴 형성 방법, 감방사선성 산 발생제 및 산 확산 제어제

Country Status (5)

Country Link
US (1) US20250334881A1 (https=)
JP (1) JPWO2023223624A1 (https=)
KR (1) KR20250009957A (https=)
TW (1) TW202346250A (https=)
WO (1) WO2023223624A1 (https=)

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JPWO2024128017A1 (https=) * 2022-12-15 2024-06-20
WO2024225059A1 (ja) * 2023-04-26 2024-10-31 サンアプロ株式会社 スルホン酸塩、オキシムスルホネート、イミドスルホネート、アミドスルホネート、前記化合物を含む酸発生剤、前記酸発生剤を含むフォトレジスト
IL319813A (en) 2024-03-27 2025-10-01 Shinetsu Chemical Co Composition for forming a layer, method for forming an organic layer, printing process, monomer and polymer
JP2025180553A (ja) 2024-05-30 2025-12-11 信越化学工業株式会社 スルホニウム塩型モノマー、ポリマー、化学増幅レジスト組成物及びパターン形成方法
JP2025185819A (ja) 2024-06-11 2025-12-23 信越化学工業株式会社 有機膜形成用組成物、有機膜形成方法、パターン形成方法および重合体
JP2026002105A (ja) 2024-06-20 2026-01-08 信越化学工業株式会社 スルホニウム塩型モノマー、ポリマー、化学増幅レジスト組成物及びパターン形成方法
WO2026004682A1 (ja) * 2024-06-24 2026-01-02 サンアプロ株式会社 スルホン酸塩、オキシムスルホネート、イミドスルホネート、アミドスルホネート、前記化合物を含む酸発生剤、前記酸発生剤を含むフォトレジスト
JP2026004689A (ja) 2024-06-26 2026-01-15 信越化学工業株式会社 有機膜形成用組成物用重合体及びその製造方法、並びに該重合体を用いた有機膜形成用組成物、該組成物を用いた有機膜形成方法及びパターン形成方法
JP2026034327A (ja) 2024-08-16 2026-02-27 信越化学工業株式会社 有機膜形成用組成物、有機膜形成方法、パターン形成方法、及び重合体
JP2026036583A (ja) 2024-08-20 2026-03-05 信越化学工業株式会社 有機膜形成用組成物、有機膜形成方法、パターン形成方法および化合物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014002359A (ja) 2012-05-21 2014-01-09 Fujifilm Corp 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスク及びパターン形成方法、並びに、電子デバイスの製造方法及び電子デバイス

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JP2018043952A (ja) * 2016-09-15 2018-03-22 宇部興産株式会社 抗腫瘍薬およびこれを含む組成物
JP7117900B2 (ja) * 2018-06-05 2022-08-15 株式会社日本触媒 化学増幅型レジスト用光ルイス酸発生剤、および化学増幅型レジスト組成物
JPWO2023002869A1 (https=) * 2021-07-21 2023-01-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014002359A (ja) 2012-05-21 2014-01-09 Fujifilm Corp 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスク及びパターン形成方法、並びに、電子デバイスの製造方法及び電子デバイス

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JPWO2023223624A1 (https=) 2023-11-23
WO2023223624A1 (ja) 2023-11-23
TW202346250A (zh) 2023-12-01
US20250334881A1 (en) 2025-10-30

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Patent event date: 20241017

Patent event code: PA01051R01D

Comment text: International Patent Application

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