KR20240157038A - 광 검출 장치 및 전자 기기 그리고 광 검출 시스템 - Google Patents

광 검출 장치 및 전자 기기 그리고 광 검출 시스템 Download PDF

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Publication number
KR20240157038A
KR20240157038A KR1020247030715A KR20247030715A KR20240157038A KR 20240157038 A KR20240157038 A KR 20240157038A KR 1020247030715 A KR1020247030715 A KR 1020247030715A KR 20247030715 A KR20247030715 A KR 20247030715A KR 20240157038 A KR20240157038 A KR 20240157038A
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South Korea
Prior art keywords
photoelectric conversion
conversion unit
light
detection device
light detection
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Pending
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KR1020247030715A
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English (en)
Korean (ko)
Inventor
다쿠미 오기노
기미야스 시나
신이치 요시다
요시키 에비코
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
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Publication of KR20240157038A publication Critical patent/KR20240157038A/ko
Pending legal-status Critical Current

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    • H01L27/14636—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H01L27/14603—
    • H01L27/14621—
    • H01L27/14625—
    • H01L27/14634—
    • H01L27/14645—
    • H01L27/14649—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/131—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/705—Pixels for depth measurement, e.g. RGBZ
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
KR1020247030715A 2022-03-09 2022-09-28 광 검출 장치 및 전자 기기 그리고 광 검출 시스템 Pending KR20240157038A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263318117P 2022-03-09 2022-03-09
US63/318,117 2022-03-09
PCT/JP2022/036209 WO2023171008A1 (ja) 2022-03-09 2022-09-28 光検出装置および電子機器ならびに光検出システム

Publications (1)

Publication Number Publication Date
KR20240157038A true KR20240157038A (ko) 2024-10-31

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KR1020247030715A Pending KR20240157038A (ko) 2022-03-09 2022-09-28 광 검출 장치 및 전자 기기 그리고 광 검출 시스템

Country Status (8)

Country Link
US (1) US20250150724A1 (https=)
EP (1) EP4492467A4 (https=)
JP (1) JPWO2023171008A1 (https=)
KR (1) KR20240157038A (https=)
CN (1) CN118575274A (https=)
DE (1) DE112022006809T5 (https=)
TW (1) TW202337018A (https=)
WO (1) WO2023171008A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013070030A (ja) 2011-09-06 2013-04-18 Sony Corp 撮像素子、電子機器、並びに、情報処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8471939B2 (en) * 2008-08-01 2013-06-25 Omnivision Technologies, Inc. Image sensor having multiple sensing layers
US9294691B2 (en) * 2011-09-06 2016-03-22 Sony Corporation Imaging device, imaging apparatus, manufacturing apparatus and manufacturing method
JP2013084786A (ja) * 2011-10-11 2013-05-09 Sony Corp 固体撮像素子、及び、電子機器
JP2013187475A (ja) * 2012-03-09 2013-09-19 Olympus Corp 固体撮像装置およびカメラシステム
JP6218687B2 (ja) * 2014-07-17 2017-10-25 オリンパス株式会社 固体撮像装置および撮像装置
WO2016111010A1 (ja) * 2015-01-09 2016-07-14 オリンパス株式会社 固体撮像装置
JP2017208496A (ja) * 2016-05-20 2017-11-24 ソニー株式会社 固体撮像装置、及び、電子機器
JP7018022B2 (ja) * 2016-11-29 2022-02-09 ヌヴォトンテクノロジージャパン株式会社 固体撮像装置及び測距撮像装置
CN110226228B (zh) * 2017-01-24 2024-02-20 索尼半导体解决方案公司 光接收器件、光接收器件制造方法、摄像器件和电子设备
CN207116430U (zh) * 2017-07-11 2018-03-16 展谱光电科技（上海）有限公司 多光谱摄像装置
WO2019130702A1 (ja) * 2017-12-27 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013070030A (ja) 2011-09-06 2013-04-18 Sony Corp 撮像素子、電子機器、並びに、情報処理装置

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Publication number Publication date
JPWO2023171008A1 (https=) 2023-09-14
US20250150724A1 (en) 2025-05-08
EP4492467A1 (en) 2025-01-15
TW202337018A (zh) 2023-09-16
WO2023171008A1 (ja) 2023-09-14
CN118575274A (zh) 2024-08-30
EP4492467A4 (en) 2025-10-01
DE112022006809T5 (de) 2024-12-19

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