JPWO2023171008A1 - - Google Patents
Info
- Publication number
- JPWO2023171008A1 JPWO2023171008A1 JP2024505874A JP2024505874A JPWO2023171008A1 JP WO2023171008 A1 JPWO2023171008 A1 JP WO2023171008A1 JP 2024505874 A JP2024505874 A JP 2024505874A JP 2024505874 A JP2024505874 A JP 2024505874A JP WO2023171008 A1 JPWO2023171008 A1 JP WO2023171008A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/131—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/705—Pixels for depth measurement, e.g. RGBZ
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/184—Infrared image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263318117P | 2022-03-09 | 2022-03-09 | |
| PCT/JP2022/036209 WO2023171008A1 (ja) | 2022-03-09 | 2022-09-28 | 光検出装置および電子機器ならびに光検出システム |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023171008A1 true JPWO2023171008A1 (https=) | 2023-09-14 |
Family
ID=87936477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024505874A Pending JPWO2023171008A1 (https=) | 2022-03-09 | 2022-09-28 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20250150724A1 (https=) |
| EP (1) | EP4492467A4 (https=) |
| JP (1) | JPWO2023171008A1 (https=) |
| KR (1) | KR20240157038A (https=) |
| CN (1) | CN118575274A (https=) |
| DE (1) | DE112022006809T5 (https=) |
| TW (1) | TW202337018A (https=) |
| WO (1) | WO2023171008A1 (https=) |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8471939B2 (en) * | 2008-08-01 | 2013-06-25 | Omnivision Technologies, Inc. | Image sensor having multiple sensing layers |
| JP2013070030A (ja) | 2011-09-06 | 2013-04-18 | Sony Corp | 撮像素子、電子機器、並びに、情報処理装置 |
| US9294691B2 (en) * | 2011-09-06 | 2016-03-22 | Sony Corporation | Imaging device, imaging apparatus, manufacturing apparatus and manufacturing method |
| JP2013084786A (ja) * | 2011-10-11 | 2013-05-09 | Sony Corp | 固体撮像素子、及び、電子機器 |
| JP2013187475A (ja) * | 2012-03-09 | 2013-09-19 | Olympus Corp | 固体撮像装置およびカメラシステム |
| JP6218687B2 (ja) * | 2014-07-17 | 2017-10-25 | オリンパス株式会社 | 固体撮像装置および撮像装置 |
| WO2016111010A1 (ja) * | 2015-01-09 | 2016-07-14 | オリンパス株式会社 | 固体撮像装置 |
| JP2017208496A (ja) * | 2016-05-20 | 2017-11-24 | ソニー株式会社 | 固体撮像装置、及び、電子機器 |
| JP7018022B2 (ja) * | 2016-11-29 | 2022-02-09 | ヌヴォトンテクノロジージャパン株式会社 | 固体撮像装置及び測距撮像装置 |
| CN110226228B (zh) * | 2017-01-24 | 2024-02-20 | 索尼半导体解决方案公司 | 光接收器件、光接收器件制造方法、摄像器件和电子设备 |
| CN207116430U (zh) * | 2017-07-11 | 2018-03-16 | 展谱光电科技（上海）有限公司 | 多光谱摄像装置 |
| WO2019130702A1 (ja) * | 2017-12-27 | 2019-07-04 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
-
2022
- 2022-09-28 JP JP2024505874A patent/JPWO2023171008A1/ja active Pending
- 2022-09-28 KR KR1020247030715A patent/KR20240157038A/ko active Pending
- 2022-09-28 WO PCT/JP2022/036209 patent/WO2023171008A1/ja not_active Ceased
- 2022-09-28 EP EP22930985.1A patent/EP4492467A4/en active Pending
- 2022-09-28 US US18/838,325 patent/US20250150724A1/en active Pending
- 2022-09-28 CN CN202280089365.9A patent/CN118575274A/zh active Pending
- 2022-09-28 DE DE112022006809.4T patent/DE112022006809T5/de active Pending
- 2022-09-29 TW TW111136890A patent/TW202337018A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20240157038A (ko) | 2024-10-31 |
| US20250150724A1 (en) | 2025-05-08 |
| EP4492467A1 (en) | 2025-01-15 |
| TW202337018A (zh) | 2023-09-16 |
| WO2023171008A1 (ja) | 2023-09-14 |
| CN118575274A (zh) | 2024-08-30 |
| EP4492467A4 (en) | 2025-10-01 |
| DE112022006809T5 (de) | 2024-12-19 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250916 |