KR20240148342A - 유전체를 사용한 전극 구조체의 현수 - Google Patents
유전체를 사용한 전극 구조체의 현수 Download PDFInfo
- Publication number
- KR20240148342A KR20240148342A KR1020247026641A KR20247026641A KR20240148342A KR 20240148342 A KR20240148342 A KR 20240148342A KR 1020247026641 A KR1020247026641 A KR 1020247026641A KR 20247026641 A KR20247026641 A KR 20247026641A KR 20240148342 A KR20240148342 A KR 20240148342A
- Authority
- KR
- South Korea
- Prior art keywords
- dielectric
- acoustic wave
- piezoelectric layer
- layer
- electrode structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003989 dielectric material Substances 0.000 title claims description 8
- 239000000725 suspension Substances 0.000 title description 3
- 238000010897 surface acoustic wave method Methods 0.000 claims abstract description 146
- 125000006850 spacer group Chemical group 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 37
- 239000010409 thin film Substances 0.000 claims description 33
- 238000004519 manufacturing process Methods 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 230000000644 propagated effect Effects 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 5
- 230000001902 propagating effect Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 230000001131 transforming effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 243
- 239000000463 material Substances 0.000 description 22
- 230000008569 process Effects 0.000 description 14
- 239000000758 substrate Substances 0.000 description 12
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 238000011045 prefiltration Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 230000001413 cellular effect Effects 0.000 description 6
- 238000004891 communication Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 238000011068 loading method Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- LUKDNTKUBVKBMZ-UHFFFAOYSA-N aluminum scandium Chemical compound [Al].[Sc] LUKDNTKUBVKBMZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02929—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
- H03H9/14541—Multilayer finger or busbar electrode
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/652,257 US20230268907A1 (en) | 2022-02-23 | 2022-02-23 | Suspending an Electrode Structure Using a Dielectric |
| US17/652,257 | 2022-02-23 | ||
| PCT/EP2023/051021 WO2023160905A1 (en) | 2022-02-23 | 2023-01-17 | Suspending an electrode structure using a dielectric |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240148342A true KR20240148342A (ko) | 2024-10-11 |
Family
ID=85036238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247026641A Pending KR20240148342A (ko) | 2022-02-23 | 2023-01-17 | 유전체를 사용한 전극 구조체의 현수 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230268907A1 (https=) |
| EP (1) | EP4483490A1 (https=) |
| JP (1) | JP2025506759A (https=) |
| KR (1) | KR20240148342A (https=) |
| CN (1) | CN118633241A (https=) |
| WO (1) | WO2023160905A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12301211B2 (en) | 2022-09-09 | 2025-05-13 | Rf360 Singapore Pte. Ltd. | Microacoustic filter with a cavity stack |
| GB202401249D0 (en) * | 2024-01-31 | 2024-03-13 | Univ Oxford Innovation Ltd | Devices and method of fabrication thereof |
| WO2026030950A1 (en) * | 2024-08-07 | 2026-02-12 | Huawei Technologies Co., Ltd. | Acoustic resonator device |
| US20260074671A1 (en) * | 2024-09-10 | 2026-03-12 | Rf360 Singapore Pte. Ltd. | Plate mode micro-acoustic filters with suspended electrode fingers and related fabrication methods |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH036912A (ja) * | 1989-06-02 | 1991-01-14 | Fujitsu Ltd | 弾性表面波素子 |
| US5453652A (en) * | 1992-12-17 | 1995-09-26 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave device with interdigital transducers formed on a holding substrate thereof and a method of producing the same |
| WO2005112258A1 (en) * | 2004-05-17 | 2005-11-24 | Gvr Trade Sa | Saw device with suspended electrodes |
| JP4943787B2 (ja) * | 2006-09-13 | 2012-05-30 | 太陽誘電株式会社 | 弾性波デバイス、共振器およびフィルタ |
| WO2011142850A2 (en) * | 2010-01-22 | 2011-11-17 | The Regents Of The University Of California | Etchant-free methods of producing a gap between two layers, and devices produced thereby |
| US20130235001A1 (en) * | 2012-03-06 | 2013-09-12 | Qualcomm Mems Technologies, Inc. | Piezoelectric resonator with airgap |
| WO2014020876A1 (ja) * | 2012-07-30 | 2014-02-06 | パナソニック株式会社 | 弾性波素子とこれを用いたアンテナ共用器 |
| US9698754B2 (en) * | 2014-05-29 | 2017-07-04 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Capacitive coupled resonator and filter device with comb electrodes and support frame separation from piezoelectric layer |
| JP6913619B2 (ja) * | 2017-12-12 | 2021-08-04 | 株式会社村田製作所 | マルチプレクサ、高周波フロントエンド回路及び通信装置 |
-
2022
- 2022-02-23 US US17/652,257 patent/US20230268907A1/en active Pending
-
2023
- 2023-01-17 JP JP2024549547A patent/JP2025506759A/ja active Pending
- 2023-01-17 WO PCT/EP2023/051021 patent/WO2023160905A1/en not_active Ceased
- 2023-01-17 KR KR1020247026641A patent/KR20240148342A/ko active Pending
- 2023-01-17 CN CN202380019369.4A patent/CN118633241A/zh active Pending
- 2023-01-17 EP EP23701287.7A patent/EP4483490A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN118633241A (zh) | 2024-09-10 |
| US20230268907A1 (en) | 2023-08-24 |
| JP2025506759A (ja) | 2025-03-13 |
| WO2023160905A1 (en) | 2023-08-31 |
| EP4483490A1 (en) | 2025-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20230268907A1 (en) | Suspending an Electrode Structure Using a Dielectric | |
| US20230361757A1 (en) | Partially Suspending a Piezoelectric Layer Using a Dielectric | |
| US11522516B2 (en) | Thin-film surface-acoustic-wave filter using lithium niobate | |
| WO2023244165A1 (en) | Surface-acoustic-wave (saw) filter with dielectric material disposed in a piezoelectric layer | |
| US12040774B2 (en) | Site-selective piezoelectric-layer trimming | |
| US20240039512A1 (en) | Twin Double-Mode Surface-Acoustic-Wave (DMS) Filters with Opposite Polarities and a Geometric Offset | |
| CN121312066A (zh) | 具有耐腐蚀性和功率耐久性的电极结构 | |
| US12489426B2 (en) | Surface-acoustic-wave (SAW) filter with an electrical conductor having a floating potential | |
| US20250150055A1 (en) | Thin-film surface-acoustic-wave resonator with aluminum nitride layer | |
| US20250096772A1 (en) | Microacoustic Filter with an Acoustically-Decoupled Electrode Structure | |
| US12301211B2 (en) | Microacoustic filter with a cavity stack | |
| US20250192748A1 (en) | Membrane-type longitudinal mode resonator | |
| US12341489B2 (en) | Surface-acoustic-wave (SAW) filter with a compensation layer having multiple densities | |
| US20230402995A1 (en) | Surface-Acoustic-Wave (SAW) Filter for Suppressing Intermodulation Distortion | |
| KR20240000483A (ko) | 전기 음향 디바이스들의 커패시터 처리를 위한 에칭 정지 및 보호층 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20240807 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application |