KR20240032106A - 플라즈마 처리 방법 및 플라즈마 처리 장치 - Google Patents

플라즈마 처리 방법 및 플라즈마 처리 장치 Download PDF

Info

Publication number
KR20240032106A
KR20240032106A KR1020247004460A KR20247004460A KR20240032106A KR 20240032106 A KR20240032106 A KR 20240032106A KR 1020247004460 A KR1020247004460 A KR 1020247004460A KR 20247004460 A KR20247004460 A KR 20247004460A KR 20240032106 A KR20240032106 A KR 20240032106A
Authority
KR
South Korea
Prior art keywords
signal
electric pulse
period
frequency
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247004460A
Other languages
English (en)
Korean (ko)
Inventor
겐 다마무시
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20240032106A publication Critical patent/KR20240032106A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020247004460A 2021-07-14 2022-07-08 플라즈마 처리 방법 및 플라즈마 처리 장치 Pending KR20240032106A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021116582 2021-07-14
JPJP-P-2021-116582 2021-07-14
PCT/JP2022/027139 WO2023286715A1 (ja) 2021-07-14 2022-07-08 プラズマ処理方法およびプラズマ処理装置

Publications (1)

Publication Number Publication Date
KR20240032106A true KR20240032106A (ko) 2024-03-08

Family

ID=84919333

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247004460A Pending KR20240032106A (ko) 2021-07-14 2022-07-08 플라즈마 처리 방법 및 플라즈마 처리 장치

Country Status (6)

Country Link
US (1) US20240153742A1 (https=)
JP (1) JPWO2023286715A1 (https=)
KR (1) KR20240032106A (https=)
CN (1) CN117597767A (https=)
TW (1) TW202310682A (https=)
WO (1) WO2023286715A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025239651A1 (ko) * 2024-05-14 2025-11-20 피에스케이 주식회사 기판 처리 방법, 제조 방법 및 기판 처리 장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025047428A1 (ja) * 2023-08-28 2025-03-06 東京エレクトロン株式会社 プラズマエッチング装置、電源ユニット及びプラズマエッチング方法
WO2025187456A1 (ja) * 2024-03-07 2025-09-12 東京エレクトロン株式会社 プラズマ処理装置、バイアス電源システム、及びプラズマ処理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020004710A (ja) 2018-06-22 2020-01-09 東京エレクトロン株式会社 制御方法及びプラズマ処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5558224B2 (ja) * 2010-06-23 2014-07-23 東京エレクトロン株式会社 基板処理方法
JP6180890B2 (ja) * 2013-11-08 2017-08-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
US10622217B2 (en) * 2016-02-04 2020-04-14 Samsung Electronics Co., Ltd. Method of plasma etching and method of fabricating semiconductor device using the same
US10424467B2 (en) * 2017-03-13 2019-09-24 Applied Materials, Inc. Smart RF pulsing tuning using variable frequency generators
US11361947B2 (en) * 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
KR102743927B1 (ko) * 2019-01-10 2024-12-17 삼성전자주식회사 플라즈마 균일성 제어 방법 및 플라즈마 프로세싱 시스템

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020004710A (ja) 2018-06-22 2020-01-09 東京エレクトロン株式会社 制御方法及びプラズマ処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025239651A1 (ko) * 2024-05-14 2025-11-20 피에스케이 주식회사 기판 처리 방법, 제조 방법 및 기판 처리 장치
KR20250163668A (ko) * 2024-05-14 2025-11-21 피에스케이 주식회사 기판 처리 방법, 제조 방법 및 기판 처리 장치

Also Published As

Publication number Publication date
CN117597767A (zh) 2024-02-23
TW202310682A (zh) 2023-03-01
US20240153742A1 (en) 2024-05-09
WO2023286715A1 (ja) 2023-01-19
JPWO2023286715A1 (https=) 2023-01-19

Similar Documents

Publication Publication Date Title
TWI880421B (zh) 電漿處理裝置、控制方法、處理器及非暫時性電腦可讀記錄媒體
KR20240032106A (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
JP2025172109A (ja) プラズマ処理方法およびプラズマ処理装置
US20250174434A1 (en) Plasma processing apparatus and power supply system
JP2024013548A (ja) プラズマ処理装置及びプラズマ処理方法
CN117637528A (zh) 蚀刻方法和等离子体处理装置
KR20240038036A (ko) 플라즈마 처리 시스템 및 플라즈마 처리 방법
TW202503829A (zh) 電漿處理裝置
KR20250003847A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
KR20220163300A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
US20240105424A1 (en) Plasma processing apparatus and plasma processing method
WO2026018730A1 (ja) プラズマ処理装置及び電源システム
KR20260041165A (ko) 플라즈마 처리 장치 및 에칭 방법
WO2023189292A1 (ja) プラズマ処理装置
WO2026034233A1 (ja) プラズマ処理装置及び電源システム
TW202431327A (zh) 電漿處理裝置及電源系統
WO2026034234A1 (ja) プラズマ処理装置及び電源システム
KR20250164230A (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
KR20250165342A (ko) 에칭 장치 및 에칭 방법
KR20230155483A (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
CN121773709A (zh) 等离子体处理装置
WO2025182632A1 (ja) プラズマ処理装置
TW202529162A (zh) 電漿處理裝置及電漿處理方法
KR20250023954A (ko) 에칭 방법 및 플라즈마 처리 장치
TW202418335A (zh) 電漿處理裝置及電源系統

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11 Administrative time limit extension requested

Free format text: ST27 STATUS EVENT CODE: U-3-3-T10-T11-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000