JPWO2023286715A1 - - Google Patents
Info
- Publication number
- JPWO2023286715A1 JPWO2023286715A1 JP2023534779A JP2023534779A JPWO2023286715A1 JP WO2023286715 A1 JPWO2023286715 A1 JP WO2023286715A1 JP 2023534779 A JP2023534779 A JP 2023534779A JP 2023534779 A JP2023534779 A JP 2023534779A JP WO2023286715 A1 JPWO2023286715 A1 JP WO2023286715A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/327—Arrangements for generating the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021116582 | 2021-07-14 | ||
| PCT/JP2022/027139 WO2023286715A1 (ja) | 2021-07-14 | 2022-07-08 | プラズマ処理方法およびプラズマ処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023286715A1 true JPWO2023286715A1 (https=) | 2023-01-19 |
Family
ID=84919333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023534779A Pending JPWO2023286715A1 (https=) | 2021-07-14 | 2022-07-08 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240153742A1 (https=) |
| JP (1) | JPWO2023286715A1 (https=) |
| KR (1) | KR20240032106A (https=) |
| CN (1) | CN117597767A (https=) |
| TW (1) | TW202310682A (https=) |
| WO (1) | WO2023286715A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025047428A1 (ja) * | 2023-08-28 | 2025-03-06 | 東京エレクトロン株式会社 | プラズマエッチング装置、電源ユニット及びプラズマエッチング方法 |
| WO2025187456A1 (ja) * | 2024-03-07 | 2025-09-12 | 東京エレクトロン株式会社 | プラズマ処理装置、バイアス電源システム、及びプラズマ処理方法 |
| KR102908543B1 (ko) * | 2024-05-14 | 2026-01-07 | 피에스케이 주식회사 | 기판 처리 방법, 제조 방법 및 기판 처리 장치 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015095493A (ja) * | 2013-11-08 | 2015-05-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| US20170229312A1 (en) * | 2016-02-04 | 2017-08-10 | Samsung Electronics Co., Ltd. | Method of plasma etching and method of fabricating semiconductor device using the same |
| JP2020515001A (ja) * | 2017-03-13 | 2020-05-21 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 可変周波数発生器を用いるスマート高周波パルス調整 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5558224B2 (ja) * | 2010-06-23 | 2014-07-23 | 東京エレクトロン株式会社 | 基板処理方法 |
| JP7175239B2 (ja) | 2018-06-22 | 2022-11-18 | 東京エレクトロン株式会社 | 制御方法、プラズマ処理装置、プログラム及び記憶媒体 |
| US11361947B2 (en) * | 2019-01-09 | 2022-06-14 | Tokyo Electron Limited | Apparatus for plasma processing and method of etching |
| KR102743927B1 (ko) * | 2019-01-10 | 2024-12-17 | 삼성전자주식회사 | 플라즈마 균일성 제어 방법 및 플라즈마 프로세싱 시스템 |
-
2022
- 2022-07-08 JP JP2023534779A patent/JPWO2023286715A1/ja active Pending
- 2022-07-08 WO PCT/JP2022/027139 patent/WO2023286715A1/ja not_active Ceased
- 2022-07-08 KR KR1020247004460A patent/KR20240032106A/ko active Pending
- 2022-07-08 CN CN202280047344.0A patent/CN117597767A/zh active Pending
- 2022-07-12 TW TW111125996A patent/TW202310682A/zh unknown
-
2024
- 2024-01-12 US US18/412,218 patent/US20240153742A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015095493A (ja) * | 2013-11-08 | 2015-05-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| US20170229312A1 (en) * | 2016-02-04 | 2017-08-10 | Samsung Electronics Co., Ltd. | Method of plasma etching and method of fabricating semiconductor device using the same |
| JP2020515001A (ja) * | 2017-03-13 | 2020-05-21 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 可変周波数発生器を用いるスマート高周波パルス調整 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117597767A (zh) | 2024-02-23 |
| TW202310682A (zh) | 2023-03-01 |
| US20240153742A1 (en) | 2024-05-09 |
| WO2023286715A1 (ja) | 2023-01-19 |
| KR20240032106A (ko) | 2024-03-08 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250414 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20260416 |