CN117597767A - 等离子体处理方法以及等离子体处理装置 - Google Patents

等离子体处理方法以及等离子体处理装置 Download PDF

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Publication number
CN117597767A
CN117597767A CN202280047344.0A CN202280047344A CN117597767A CN 117597767 A CN117597767 A CN 117597767A CN 202280047344 A CN202280047344 A CN 202280047344A CN 117597767 A CN117597767 A CN 117597767A
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CN
China
Prior art keywords
period
signal
plasma processing
processing method
pulse
Prior art date
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Pending
Application number
CN202280047344.0A
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English (en)
Chinese (zh)
Inventor
玉虫元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN117597767A publication Critical patent/CN117597767A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
CN202280047344.0A 2021-07-14 2022-07-08 等离子体处理方法以及等离子体处理装置 Pending CN117597767A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021116582 2021-07-14
JP2021-116582 2021-07-14
PCT/JP2022/027139 WO2023286715A1 (ja) 2021-07-14 2022-07-08 プラズマ処理方法およびプラズマ処理装置

Publications (1)

Publication Number Publication Date
CN117597767A true CN117597767A (zh) 2024-02-23

Family

ID=84919333

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280047344.0A Pending CN117597767A (zh) 2021-07-14 2022-07-08 等离子体处理方法以及等离子体处理装置

Country Status (6)

Country Link
US (1) US20240153742A1 (https=)
JP (1) JPWO2023286715A1 (https=)
KR (1) KR20240032106A (https=)
CN (1) CN117597767A (https=)
TW (1) TW202310682A (https=)
WO (1) WO2023286715A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025047428A1 (ja) * 2023-08-28 2025-03-06 東京エレクトロン株式会社 プラズマエッチング装置、電源ユニット及びプラズマエッチング方法
WO2025187456A1 (ja) * 2024-03-07 2025-09-12 東京エレクトロン株式会社 プラズマ処理装置、バイアス電源システム、及びプラズマ処理方法
KR102908543B1 (ko) * 2024-05-14 2026-01-07 피에스케이 주식회사 기판 처리 방법, 제조 방법 및 기판 처리 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110318933A1 (en) * 2010-06-23 2011-12-29 Tokyo Electron Limited Substrate processing method
JP2015095493A (ja) * 2013-11-08 2015-05-18 株式会社日立ハイテクノロジーズ プラズマ処理方法
US20170229312A1 (en) * 2016-02-04 2017-08-10 Samsung Electronics Co., Ltd. Method of plasma etching and method of fabricating semiconductor device using the same
CN110313049A (zh) * 2017-03-13 2019-10-08 应用材料公司 利用变频产生器的智能rf脉冲调谐
US20200227240A1 (en) * 2019-01-10 2020-07-16 Samsung Electronics Co., Ltd. Method of controlling uniformity of plasma and plasma processing system
CN111430206A (zh) * 2019-01-09 2020-07-17 东京毅力科创株式会社 等离子体处理装置及蚀刻方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7175239B2 (ja) 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110318933A1 (en) * 2010-06-23 2011-12-29 Tokyo Electron Limited Substrate processing method
JP2015095493A (ja) * 2013-11-08 2015-05-18 株式会社日立ハイテクノロジーズ プラズマ処理方法
US20170229312A1 (en) * 2016-02-04 2017-08-10 Samsung Electronics Co., Ltd. Method of plasma etching and method of fabricating semiconductor device using the same
CN110313049A (zh) * 2017-03-13 2019-10-08 应用材料公司 利用变频产生器的智能rf脉冲调谐
CN111430206A (zh) * 2019-01-09 2020-07-17 东京毅力科创株式会社 等离子体处理装置及蚀刻方法
US20200227240A1 (en) * 2019-01-10 2020-07-16 Samsung Electronics Co., Ltd. Method of controlling uniformity of plasma and plasma processing system

Also Published As

Publication number Publication date
TW202310682A (zh) 2023-03-01
US20240153742A1 (en) 2024-05-09
WO2023286715A1 (ja) 2023-01-19
KR20240032106A (ko) 2024-03-08
JPWO2023286715A1 (https=) 2023-01-19

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