KR20230148464A - Conductive adhesive film, manufacturing method and bonding method using the same - Google Patents

Abstract

The present invention relates to a conductive bonding film, a manufacturing method thereof, and a bonding method using the same, and includes a base substrate 110, a first conductive adhesive layer 121 formed on the upper surface of the base substrate 110, and the first conductive adhesive layer 121. ) includes a conductive thin film layer 122 formed on the upper surface of the conductive thin film layer 122 and a second conductive adhesive layer 123 formed on the upper surface of the conductive thin film layer 122. The present invention has the effect of improving product competitiveness by lowering manufacturing costs by applying a low-cost conductive thin film layer.

Description

Conductive adhesive film, manufacturing method and bonding method using the same {Conductive adhesive film, manufacturing method and bonding method using the same}

The present invention relates to a conductive bonding film, and more specifically, to a conductive bonding film used to electrically connect electronic components such as a substrate and a semiconductor chip, a manufacturing method thereof, and a bonding method using the same.

In order for electronic products to operate, electrical signals must flow between the board and electronic components. Conductive bonding film is a process that combines the soldering process with a film, enabling ultra-fine bonding, reducing product weight and providing thin and highly reliable bonding.

Conductive bonding films can be manufactured in a film state by mixing fine conductive particles with a polymer adhesive resin. However, polymer adhesive resin films do not have excellent adhesion to electrodes and are difficult to maintain electrical properties, so research to improve them continues. there is.

As an alternative to this, a paste using a high content of silver particles is manufactured into a silver film of the desired thickness using coating equipment, but there is a problem of low cost competitiveness due to the recent increase in the price of silver particles. .

The matters described in the above background technology are intended to aid understanding of the background of the invention and may include matters that are not disclosed prior art.

Publication of Patent No. 2011-0090332 (published on August 10, 2011)

The object of the present invention is to provide a conductive bonding film that has the same characteristics as a conventional silver film manufactured with a high content of silver particles and can improve product competitiveness by lowering the manufacturing cost, a method of manufacturing the same, and a method using the same. The purpose is to provide a joining method.

A conductive bonding film according to an embodiment of the present invention for solving the above problems includes a base substrate, a first conductive adhesive layer formed on the upper surface of the base substrate, a conductive thin film layer formed on the upper surface of the first conductive adhesive layer, and a second conductive adhesive formed on the upper surface of the conductive thin film layer. 2 Contains a conductive adhesive layer.

The base substrate may be one of polyethylene terephthalate (PET) film, polyimide (PI) film, and Teflon (PTFE) film.

The conductive thin film layer may be a Cu-based thin film layer.

The first conductive adhesive layer and the second conductive adhesive layer may be made of the same material.

The first conductive adhesive layer and the second conductive adhesive layer may be Ag-based adhesive layers.

The conductive thin film layer may have a multilayer structure.

The first conductive adhesive layer and the second conductive adhesive layer may have a multilayer structure.

The method of manufacturing a conductive adhesive film includes the steps of forming a first conductive adhesive layer by applying or printing Ag paste on the upper surface of the base substrate, drying the first conductive adhesive layer, and applying or printing Cu paste on the upper surface of the first conductive adhesive layer. It includes forming a conductive thin film layer, drying the conductive thin film layer, applying or printing Ag paste on the upper surface of the conductive thin film layer to form a second conductive adhesive layer, and drying the second conductive adhesive layer.

The step of forming a first conductive adhesive layer by applying or printing Ag paste on the upper surface of the base substrate includes printing or applying Ag paste on the upper surface of the base substrate during the process of transferring the base substrate from roll to roll to form a first conductive adhesive layer. can be formed.

In the step of forming a first conductive adhesive layer by applying or printing Ag paste on the upper surface of the base substrate, the Ag paste contains 60 to 95% by weight of Ag powder, 4 to 20% by weight of solvent, 0.5 to 3% by weight of binder, and the remaining surface treatment agent. may include.

The step of drying the first conductive adhesive layer may be performed while passing through an oven maintained at 50°C to 150°C.

The step of forming a conductive thin film layer by applying or printing Cu paste on the upper surface of the first conductive adhesive layer includes printing or printing Cu paste on the first conductive adhesive layer in the process of transferring the base substrate on which the first conductive adhesive layer is formed from roll to roll. It can be applied to form a conductive thin film layer.

The step of forming a second conductive adhesive layer by applying or printing Ag paste on the upper surface of the conductive thin film layer includes printing or printing Ag paste on the conductive thin film layer in the process of transferring the base substrate on which the first conductive adhesive layer and the conductive thin film layer are formed from roll to roll. It can be applied to form a second conductive adhesive layer.

In the step of forming a second conductive adhesive layer by applying or printing Ag paste on the upper surface of the conductive thin film layer, the second conductive adhesive layer may be formed to have the same thickness as the first conductive adhesive layer.

The bonding method using a conductive bonding film includes the steps of fixing the conductive bonding film to a die and fixing the first object to an upper chuck that adsorbs and fixes the first object using a vacuum, and fixing the first object to the upper chuck while heating the upper chuck and the die, respectively. Pressing the first object toward the conductive bonding film to transfer a bonding metal layer composed of first and second conductive adhesive layers and a conductive thin film layer on the conductive bonding film to one side of the first object, and transferring the metal layer to one side of the first object. It includes placing a second object on the bed and sintering it.

In the step of transferring the bonding metal layer on the conductive bonding film to the first object by pressing the first object fixed to the upper chuck toward the conductive bonding film while heating the upper chuck and the die, respectively, the upper chuck and the die are each heated at a temperature of 100°C to 170°C. It can be heated within the range and performed for 1 to 5 minutes at a pressure of 1 MPa to 5 MP.

The first object may be a substrate, and the second object may be a power semiconductor chip.

In the present invention, Ag paste, Cu paste, and Ag paste are sequentially coated and dried on the upper surface of a base substrate to form a bonded metal layer, and the bonded metal layer is a structure in which a thin Ag-based adhesive layer is formed on the upper and lower surfaces of a low-cost Cu-based thin film layer. Therefore, it has the same characteristics as a silver film manufactured to a desired thickness including a conventional high content of silver particles, but has the effect of lowering the manufacturing cost and improving product competitiveness.

In addition, in the present invention, the paste is applied to the base substrate and dried to form a three-layer bonded metal layer, so the process of manufacturing the bonded metal layer is stable, and the bonded metal layer can be bonded to the exact size corresponding to the object through transfer. This has the effect of increasing joint reliability.

1 is a cross-sectional view showing a conductive bonding film according to an embodiment of the present invention.
Figure 2 is a flow chart showing a method of manufacturing a conductive bonding film according to an embodiment of the present invention.
Figure 3 is a configuration diagram showing a method of manufacturing a conductive bonding film according to an embodiment of the present invention.
Figure 4 is a cross-sectional view showing a conductive bonding film according to another embodiment of the present invention.
Figure 5 is a flow chart showing a method of bonding a second object to a first object using a conductive bonding film according to an embodiment of the present invention.
Figure 6 is a configuration diagram showing a method of bonding a second object to a first object using a conductive bonding film according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

1 is a cross-sectional view showing a conductive bonding film according to an embodiment of the present invention.

The conductive bonding film 100 of the present invention has a structure in which a multi-layer bonding metal layer 120 is formed on a base substrate 110 having release properties. The bonding metal layer 120 of the conductive bonding film 100 can be used to electrically connect electronic components such as a power semiconductor chip (reference numeral 10 in FIG. 6) by bonding them to the substrate 20.

As shown in FIG. 1, the conductive bonding film 100 includes a base substrate 110 and a multi-layer bonding metal layer 120 formed on the upper surface of the base material 110, and the bonding metal layer 120 is a first It includes a conductive adhesive layer 121, a conductive thin film layer 122, and a second conductive adhesive layer 123. Specifically, the conductive bonding film 100 includes a first conductive adhesive layer 121 formed on the upper surface of the base substrate 110, a conductive thin film layer 122 formed on the upper surface of the first conductive adhesive layer 121, and a conductive thin film layer 122. It includes a second conductive adhesive layer 123 formed on the upper surface. That is, the conductive bonding film 100 is formed by sequentially stacking a first conductive adhesive layer 121, a conductive thin film layer 122, and a second conductive adhesive layer 123 on the upper surface of the base substrate 110. The first conductive adhesive layer 121, the conductive thin film layer 122, and the second conductive adhesive layer 123 become the bonding metal layer 120 used to electrically connect electronic components to the substrate.

The base substrate 110 has release properties and can separate the bonding metal layer 120. The bonding metal layer 120 may be separated from the base substrate 110 by transfer. The base substrate 110 can be made of one of polyethylene terephthalate (PET) film, polyimide (PI) film, and Teflon (PTFE) film, which have excellent release properties. In this embodiment, PET film is used as the base substrate 110. Let's use it as an example. The PET film maintains the flatness of the bonding metal layer 120, making it easy to form a uniform thickness of the bonding metal layer 120.

The conductive thin film layer 122 is made of a Cu-based thin film layer. The first conductive adhesive layer 121 and the second conductive adhesive layer 123 may be made of the same material. In the embodiment, the first conductive adhesive layer 121 and the second conductive adhesive layer 123 are made of Ag-based adhesive layers.

Cu paste is a paste based on copper and copper alloys. The manufacturing cost of copper is cheaper than silver powder, and a highly conductive paste can be manufactured in small amounts. Cu paste may be manufactured by mixing a low melting point alloy and copper powder. Cu paste can improve conductivity by using a low-melting point alloy as a binder to bring contact between copper particles. An example of a low melting point alloy is a material that melts below 150 degrees and diffuses between and into copper particles to form a metallic bond and improve conductivity. In addition, Cu paste can secure electrical conductivity and adhesion with Ag paste by adding an organic binder. As an example, the binder may be an epoxy-based resin.

Alternatively, the Cu paste may be a mixture of Cu powder, solder powder, and polymer resin with curing properties.

In the example, the Cu-based thin film layer formed using Cu paste is intended to reduce manufacturing costs, and the Ag-based adhesive layer is intended to increase electrical conductivity and prevent oxidation of copper. Copper-based materials have the advantages of low unit cost and excellent electrical conductivity, but due to the characteristics of the material, there is a difficulty in securing oxidation resistance. Ag has better electrical conductivity and thermal conductivity compared to copper, so it has advantages in heat dissipation characteristics, but it has the disadvantage of being expensive. Therefore, in the embodiment, the Ag-based adhesive layer, the Cu-based thin film layer, and the Ag-based adhesive layer are thinly coated on the base substrate 110 to manufacture the bonded metal layer 120 in which the Ag-based adhesive layer is thinly formed on the upper and lower surfaces of the Cu-based thin film layer. It is possible to achieve excellent electrical conductivity while reducing the electrical conductivity.

Manufacturing costs can be reduced by securing the basic thickness of the bonding metal layer 120 with a Cu-based thin film layer and forming the bonding metal layer 120 by forming a thin Ag-based adhesive layer on both sides (top and bottom) of the Cu-based thin film layer. You can.

The thickness of the bonding metal layer 120 may range from 5㎛ to 250㎛. The sum of the thicknesses of the first conductive adhesive layer 121 and the second conductive adhesive layer 123 may range from 1/3 to 2/3 of the thickness of the bonding metal layer 120. Preferably, the total thickness of the first conductive adhesive layer 121 and the second conductive adhesive layer 123 may be 1/2 of the thickness of the bonding metal layer 120. As an example, when manufacturing the bonding metal layer 120 to 20㎛, a first conductive adhesive layer 121 with a thickness of 5㎛ is formed on the upper surface of the base substrate 110, and a first conductive adhesive layer 121 with a thickness of 5㎛ is formed on the upper surface of the first conductive adhesive layer 121. A conductive thin film layer 122 with a thickness of 10 μm may be formed, and a second conductive adhesive layer 123 with a thickness of 5 μm may be formed on the upper surface of the conductive thin film layer 122. When the total thickness of the first conductive adhesive layer 121 and the second conductive adhesive layer 123 is formed in the range of 1/3 to 2/3 of the thickness of the bonding metal layer 120, conventional high-content silver particles are used. As a result, product competitiveness can be improved by lowering manufacturing costs while having the same characteristics as a silver film manufactured to the desired thickness.

The first conductive adhesive layer 121 and the second conductive adhesive layer 123 may have the same thickness. When bonding a semiconductor chip to a substrate, the thickness of the first conductive adhesive layer 121 and the second conductive adhesive layer 123 must be the same to prevent tolerance between the substrate and the semiconductor chip and enable stable bonding.

The first conductive adhesive layer 121 may be formed by coating Ag paste on the upper surface of the base substrate 110 by applying or printing, and the second conductive adhesive layer 123 may be formed by coating Ag paste on the upper surface of the conductive thin film layer 122. It can be formed by coating by applying or printing.

Ag paste contains 60 to 95% by weight of Ag powder, 4 to 20% by weight of solvent, 0.5 to 3% by weight of binder, and the remaining surface treatment agent.

Ag powder allows the first and second conductive adhesive layers 121 and 123 to have high thermal conductivity and electrical conductivity. Ag powder is contained in the form of nanoparticles for uniform dispersion. Ag powder may be of spherical type or flake type. Preferably the Ag powder is of flake type. When the Ag powder is a flake type, the surface area is large and the thickness is thin, which increases the contact area between the Ag powders, resulting in excellent adhesion. Additionally, when the Ag powder is of the flake type, a conductive path is well formed through surface contact between the flake particles, resulting in excellent electrical conductivity.

If the Ag powder is less than 60% by weight of the total weight, it is difficult to secure electrical conductivity, and if it exceeds 95% by weight, it is difficult to adhere to the conductive thin film layer 122 due to the relative lack of solvent and binder content.

Solvent controls the viscosity of the binder and provides flowability. If the solvent is included in less than 4% by weight of the total weight, it is difficult to uniformly disperse the Ag paste, and if it is included in more than 20% by weight, it may be difficult to secure adhesion to the conductive thin film layer 122 due to the relative lack of binder content.

The binder ensures that the conductive adhesive layers 121 and 123 have excellent adhesion to the conductive thin film layer 122 and that the Ag powder is uniformly applied. The binder can control the coating thickness by controlling the spreadability of the Ag paste. Solvent and binder must be used together to optimize the thickness of the Ag paste to the designed thickness. If the binder is less than 0.5% by weight of the total weight, it is difficult to uniformly distribute the Ag powder, and if it exceeds 3% by weight, it is difficult to secure the conductivity of the Ag-based adhesive layer. The binder can be used to secure adhesion while maintaining electrical conductivity by applying an organic binder. As an example, the binder may be an epoxy-based resin. Epoxy-based resins exhibit curing properties and change from a liquid state to a solid state when dried, forming a thin film. Additionally, epoxy-based resins are the best in terms of adhesion and conductivity.

The surface treatment agent is used to remove the oxide film formed on the surface of the conductive thin film layer 122. As the oxide film formed on the surface of the conductive thin film layer 122 is removed, the adhesion between the conductive thin film layer 122 and the Ag paste increases. The surface treatment agent interacts with the binder and solvent to increase the adhesion between the Cu-based thin film layer and the Ag-based adhesive layer.

In the embodiment, the conductive bonding film 100 includes a bonding metal layer 120 with a multi-layer structure formed by sequentially coating and drying Ag paste, Cu paste, and Ag paste on the upper surface of the base substrate 110. The above-described bonding metal layer 120 can improve product competitiveness by lowering the amount of Ag used.

Additionally, the first conductive adhesive layer 121 and the second conductive adhesive layer 123 may use an Au-based adhesive layer instead of an Ag-based adhesive layer, but it is preferable to use an Ag-based adhesive layer for cost reasons.

The conductive thin film layer 122 has been described as an example of forming a Cu-based thin film layer by applying Cu paste, but it can also be formed as an Al-based thin film layer by applying Al paste.

Figure 2 is a flow chart showing a method of manufacturing a conductive bonding film according to an embodiment of the present invention, and Figure 3 is a configuration diagram showing a method of manufacturing a conductive bonding film according to an embodiment of the present invention.

As shown in Figures 2 and 3, the method of manufacturing a conductive adhesive film according to an embodiment of the present invention includes forming a first conductive adhesive layer 121 by applying or printing Ag paste on the upper surface of the base substrate 110. (S10) and the step of drying the first conductive adhesive layer 121 (S20) and the step of forming the conductive thin film layer 122 by applying or printing Cu paste on the upper surface of the first conductive adhesive layer 121 (S30) and the conductive A step of drying the thin film layer 122 (S40) and a step of forming the second conductive adhesive layer 123 by applying or printing Ag paste on the upper surface of the conductive thin film layer 122 (S50) and the second conductive adhesive layer 123. Includes a drying step (S60).

In step (S10), in the process of transferring the base substrate 110 from roll r1 to roll r2, Ag paste is printed or applied to the upper surface of the base substrate 110 to form the first conductive adhesive layer 121. do.

Ag paste contains 60 to 95% by weight of Ag powder, 4 to 20% by weight of solvent, 0.5 to 3% by weight of binder, and the remaining surface treatment agent. Ag paste is an Ag sintering paste that can be sintered at low temperatures and can withstand high temperatures well. The sintering temperature of Ag paste may be 160°C to 300°C.

Additionally, in step (S10), Ag may be uniformly applied to the upper surface of the base substrate 110 by spraying the conductive paste at a specific pressure.

Step (S20) may be performed while passing through an oven (m1) maintained at 50°C to 150°C. As an example, the base substrate 110 on which Ag paste is applied or printed on the upper surface to form the first conductive adhesive layer 121 passes through an oven m1 maintained at 50°C to 150°C to form the first conductive adhesive layer 121. Allow to dry. Drying time may be less than 30 minutes. Before performing step (S20), a period of time maintained at room temperature may be included for leveling the first conductive adhesive layer 121 applied or printed on the upper surface of the base substrate 110. Additionally, a leveling roll (r) for leveling the first conductive adhesive layer 121 may be used.

In step (S30), Cu paste is printed or applied on the first conductive adhesive layer 121 in the process of transferring the base substrate 110 on which the first conductive adhesive layer 121 is formed from the roll (r2) to the roll (r3). Thus, a conductive thin film layer 122 is formed.

Step (S40) may be performed while passing through an oven (m2) maintained at 50°C to 150°C. As an example, the base substrate 110 on which the conductive thin film layer 122 is formed by applying or printing Cu paste on the first conductive adhesive layer 121 passes through an oven m1 maintained at 50°C to 150°C to form a conductive thin film layer ( 122) is allowed to dry. The drying time and drying conditions of step (S40) may be the same as those of step (S20).

In the step (S50), the Ag paste is applied on the conductive thin film layer 122 in the process of transferring the base substrate 110 on which the first conductive adhesive layer 121 and the conductive thin film layer 122 are formed from the roll (r3) to the roll (r4). is printed or applied to form the second conductive adhesive layer 123. The Ag paste forming the first conductive adhesive layer 121 and the Ag paste forming the second conductive adhesive layer 123 are made of the same ingredients. The second conductive adhesive layer 123 is formed to have the same thickness as the first conductive adhesive layer 121.

Step (S60) may be performed while passing through an oven (m3) maintained at 50°C to 150°C. As an example, the base substrate 110, on which the second conductive adhesive layer 123 is formed by applying or printing Ag paste on the conductive thin film layer 122, passes through an oven (m3) maintained at 50°C to 150°C to form the second conductive layer. Allow the adhesive layer 123 to dry. The drying time and drying conditions of step (S40) may be the same as those of step (S20).

The conductive bonding film 100 manufactured by the above-described method has a three-layer structure of a first conductive adhesive layer 121, a conductive thin film layer 122, and a second conductive adhesive layer 123 bonded to the upper surface of the base substrate 110. A metal layer 120 is formed, and the bonded metal layer 120 can be separated from the base substrate 110 through a transfer process.

The conductive bonding film 100 manufactured by the above-described method is wound on a roll located at the end of the process, and when used, it can be temporarily bonded to an object through a transfer process while unwinding the rolled conductive bonding film 100.

Figure 4 is a cross-sectional view showing a conductive bonding film according to another embodiment of the present invention.

As shown in FIG. 4, in another embodiment, the conductive adhesive film 100-1 of the present invention may have a multilayer structure of the first conductive adhesive layers 121a and 121b and the second conductive adhesive layers 123a and 123b. . As an example, the first conductive adhesive layers 121a and 121b formed on the upper surface of the base substrate 110 and the second conductive adhesive layers 123a and 123b formed on the upper surface of the conductive thin film layer 122 may each be formed in two or more layers. You can. If the first conductive adhesive layers (121a, 121b) and the second conductive adhesive layers (123a, 123b) are each formed in two or more layers, the effect of preventing the copper forming the conductive thin film layer 122 from being exposed to the surface is expected. You can.

The first conductive adhesive layers (121a, 121b) and the second conductive adhesive layers (123a, 123b) are formed in a multi-layer structure to control the thickness of the first conductive adhesive layers (121a, 121b) and the second conductive adhesive layers (123a, 123b). It can be done. The boundaries of the multilayer structure in the first conductive adhesive layers 121a and 121b and the second conductive adhesive layers 123a and 123b may disappear after sintering.

When the first conductive adhesive layers (121a, 121b) and the second conductive adhesive layers (123a, 123b) are formed in a multi-layer structure, Ag paste is applied or printed on the upper surface of the base substrate 110 in the drawing of FIG. 3 to form the first conductive adhesive layer. The step of forming the adhesive layers (121a, 121b) (S10) and the step of drying the first conductive adhesive layers (121a, 121b) (S20) are performed at least twice to form a multi-layered first conductive layer on the upper surface of the base substrate 110. Adhesive layers 121a and 121b can be formed.

In addition, forming second conductive adhesive layers (123a, 123b) by applying or printing Ag paste on the conductive thin film layer 122 (S30) and drying the second conductive adhesive layers (123a, 123b) (S20). This may be performed twice or more to form the second conductive adhesive layers 123a and 123b with a multi-layer structure on the conductive thin film layer 122.

In this case as well, it is preferable that the first conductive adhesive layers 121a and 121b and the second conductive adhesive layers 123a and 123b are made of the same material and have the same thickness.

Although not shown, the conductive thin film layer 122 may have a multilayer structure. Forming the conductive thin film layer 122 into a multi-layer structure may be performed to control the thickness of the conductive thin film layer 122. The boundary of the multilayer structure in the conductive thin film layer 122 may disappear after sintering.

The conductive bonding films 100 and 100-1 manufactured by the above-described method can be transferred to the first object 20 through a transfer process and then used for bonding the first object 20 and the second object 10. .

Figure 5 is a flow chart showing a method of bonding a second object to a first object using a conductive bonding film according to an embodiment of the present invention, and Figure 6 is a flow chart showing a method of bonding a second object to a first object using a conductive bonding film according to an embodiment of the present invention. This is a diagram showing a method of joining a second object to an object.

As shown in Figures 5 and 6, the bonding method using a conductive bonding film includes fixing the conductive bonding film to a die and fixing the first object to an upper chuck that adsorbs and fixes the first object using a vacuum ( While heating S110), the upper chuck, and the die, respectively, the first object 20 fixed to the upper chuck is pressed toward the conductive bonding film 100 to form the first and second conductive adhesive layers 121 and 123 on the conductive bonding film 100. A step (S120) of transferring the bonding metal layer 120 made of the thin film layer 122 to one side of the first object 20 and a second object (S120) on the bonding metal layer 120 transferred to one side of the first object 20. 10) includes the step of placing and pressurizing sintering (S130).

The first object 20 may be a substrate, and the second object 10 may be a power semiconductor chip. For example, the first object 20 may be an AMB substrate, and the second object 10 may be a GaN chip. The AMB substrate is a ceramic substrate that includes a ceramic substrate and a metal layer brazed to at least one surface of the ceramic substrate to increase the heat dissipation efficiency of heat generated from the semiconductor chip.

In the step (S110), the first object 20 is adsorbed and fixed in a vacuum to position the first object 20 on the upper surface of the conductive bonding film 100 without damage or contamination. The conductive adhesive film 100 fixed to the die has the second conductive adhesive layers 121 and 123 facing upward.

In step (S120), the upper chuck and the die are heated to a temperature range of 100°C to 170°C, respectively, and performed for 1 to 5 minutes at a pressure of 1 MPa to 5 MP to apply the first and second marks to one side of the first object 20. 2 The bonding metal layer 120 composed of the conductive adhesive layers 121 and 123 and the conductive thin film layer 122 is transferred.

In the step (S130), the second object 10 can be sintered while pressing the second object 10 toward the first object 20 to bond the second object 10 to the first object 20 through the bonding metal layer 120. . Sintering can be performed at a temperature of 160°C to 300°C for 2 minutes or more and 30 minutes or less. Pressure sintering minimizes pores when bonding semiconductor chips, etc. to a substrate, ensures that a conductive path is well formed, and increases process efficiency by shortening the sintering time.

The above description is merely an illustrative explanation of the technical idea of the present invention, and various modifications and variations will be possible to those skilled in the art without departing from the essential characteristics of the present invention. Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but are for illustrative purposes, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted in accordance with the claims below, and all technical ideas within the equivalent scope should be construed as being included in the scope of rights of the present invention.

100: Conductive bonding film 110: Base substrate
120: bonding metal layer 121: first conductive adhesive layer
122: Conductive thin film layer 123: Second conductive adhesive layer
r1, r2, r3, r4: roll m1, m2, m3: oven
10: Semiconductor chip (second object) 20: Substrate (first object)

Claims (17)

base substrate;
a first conductive adhesive layer formed on the upper surface of the base substrate;
A conductive thin film layer formed on the first conductive adhesive layer; and
a second conductive adhesive layer formed on the upper surface of the conductive thin film layer;
A conductive bonding film comprising: According to paragraph 1,
The base material is a conductive bonding film that is one of polyethylene terephthalate (PET) film, polyimide (PI) film, and Teflon (PTFE) film. According to paragraph 1,
A conductive bonding film wherein the conductive thin film layer is a Cu-based thin film layer. According to paragraph 1,
The first conductive adhesive layer and the second conductive adhesive layer are made of the same material. According to paragraph 1,
The first conductive adhesive layer and the second conductive adhesive layer are Ag-based adhesive layers. According to paragraph 1,
The conductive thin film layer is a conductive bonding film having a multilayer structure. According to paragraph 1,
The first conductive adhesive layer and the second conductive adhesive layer have a multilayer structure. Forming a first conductive adhesive layer by applying or printing Ag paste on the upper surface of the base substrate;
drying the first conductive adhesive layer;
forming a conductive thin film layer by applying or printing Cu paste on the upper surface of the first conductive adhesive layer;
drying the conductive thin film layer;
forming a second conductive adhesive layer by applying or printing Ag paste on the upper surface of the conductive thin film layer; and
drying the second conductive adhesive layer;
A method of manufacturing a conductive bonding film comprising. According to clause 8,
The step of forming a first conductive adhesive layer by applying or printing Ag paste on the upper surface of the base substrate,
A method of manufacturing a conductive bonding film in which a first conductive adhesive layer is formed by printing or applying Ag paste to the upper surface of the base material during the process of transferring the base material from roll to roll. According to clause 8,
In the step of forming a first conductive adhesive layer by applying or printing Ag paste on the upper surface of the base substrate,
The Ag paste is
A method of manufacturing a conductive bonding film containing 60-95% by weight of Ag powder, 4-20% by weight of solvent, 0.5-3% by weight of binder, and the remaining surface treatment agent. According to clause 8,
The step of drying the first conductive adhesive layer is,
A method of manufacturing a conductive bonding film performed by passing through an oven maintained at 50℃~150℃. According to clause 8,
The step of forming a conductive thin film layer by applying or printing Cu paste on the upper surface of the first conductive adhesive layer,
A method of manufacturing a conductive bonding film in which the conductive thin film layer is formed by printing or applying Cu paste on the first conductive adhesive layer in the process of transferring the base substrate on which the first conductive adhesive layer is formed from roll to roll. According to clause 8,
The step of forming a second conductive adhesive layer by applying or printing Ag paste on the upper surface of the conductive thin film layer,
A method of manufacturing a conductive bonding film in which the second conductive adhesive layer is formed by printing or applying Ag paste on the conductive thin film layer in the process of transferring the base substrate on which the first conductive adhesive layer and the conductive thin film layer are formed from roll to roll. According to clause 8,
In the step of forming a second conductive adhesive layer by applying or printing Ag paste on the upper surface of the conductive thin film layer,
A method of manufacturing a conductive bonding film, wherein the second conductive adhesive layer is formed to the same thickness as the first conductive adhesive layer. Fixing the conductive bonding film prepared according to claim 8 to a die and fixing the first object to an upper chuck that adsorbs and fixes the first object using a vacuum;
While heating the upper chuck and the die, respectively, the first object fixed to the upper chuck is pressed toward the conductive bonding film to form a bonding metal layer composed of first and second conductive adhesive layers and a conductive thin film layer on the conductive bonding film to the first object. A step of transferring to one side of; and
Placing a second object on a metal layer transferred to one side of the first object and sintering it;
A bonding method using a conductive bonding film comprising. According to clause 15,
In the step of transferring the bonding metal layer on the conductive bonding film to the first object by pressing the first object fixed to the upper chuck toward the conductive bonding film while heating the upper chuck and the die, respectively,
A bonding method using a conductive bonding film in which the upper chuck and the die are heated to a temperature range of 100°C to 170°C, respectively, and performed at a pressure of 1MPa to 5MP for 1 minute to 5 minutes. According to clause 15,
The first object is a substrate,
A bonding method using a conductive bonding film wherein the second object is a power semiconductor chip.