KR20230133765A - Dicing tape and manufacturing method of semiconductor device using dicing tape - Google Patents

Abstract

[Problem] In the manufacturing process of a semiconductor device, (1) the die bond film is well cleaved by cool expand and partial peeling is formed, and (2) during pickup, the semiconductor with the cleaved die bond film is formed. Provides a dicing tape with excellent pick-up properties as chips do not re-stick.
[Solution] A base film with an average value of the stretching modulus in the MD direction at 0°C and the elastic modulus at 5% stretching in the TD direction of 165 to 260 MPa, an active energy ray-reactive carbon-carbon double bond, and 12.0 to 40.5 mgKOH/g. It contains 2.4 to 7.0 parts by mass of a polyisocyanate-based crosslinking agent relative to 100 parts by mass of an acrylic adhesive polymer having a hydroxyl value of ) is 0.14 to 1.32, and consists of an adhesive layer having an adhesive strength of 3.50 N/25 mm or less after aerobic UV irradiation to a stainless steel plate at 23°C and 0.25 to 0.70 N/25 mm after anoxic UV irradiation. Dicing tape.

Description

DICING TAPE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING DICING TAPE}

The present invention relates to a dicing tape that can be used in the manufacturing process of a semiconductor device and a method of manufacturing a semiconductor device using the dicing tape.

In the manufacture of semiconductor devices, a dicing tape or a dicing die bond film in which the dicing tape and the die bond film are integrated are used.

Dicing tape has an adhesive layer provided on a base film, and is used to hold semiconductor chips broken into pieces by dicing so that they do not scatter during dicing of a semiconductor wafer. It is used as. The separated semiconductor chip is then peeled off from the adhesive layer of the dicing tape and adhered to an adherend such as a lead frame, a wiring board, or another semiconductor chip via a separately prepared adhesive or adhesive film.

The dicing die bond film is a peelable die bond film (hereinafter sometimes referred to as “adhesive film” or “adhesive layer”) provided on the adhesive layer of the dicing tape. In the manufacture of semiconductor devices, dicing die bond films are used to obtain individual semiconductor chips with dicing die bond films by arranging and attaching semiconductor wafers that have been divided into pieces or not on a die bond film. The semiconductor chip with the die-bonding film is then peeled from the adhesive layer of the dicing tape together with the die-bonding film by pushing up from the lower surface of the dicing tape using a pushing jig (for example, a pushing pin). It is picked up and fixed to an adherend such as a lead frame, wiring board, or other semiconductor chip via a die bond film.

The dicing die bond film is suitably used from the viewpoint of improving productivity, but as a method of obtaining a semiconductor chip with a die bond film using the dicing die bond film, recently, a conventional dicing blade rotating at high speed has been used. Instead of the full cut cutting method, a method called SDBG (Stealth Dicing Before Griding) has been proposed as a method that can suppress chipping when dividing a thin semiconductor wafer into chips.

In this method, first, a semiconductor wafer is attached to a backgrinding tape, and a laser beam is irradiated to the inside of the semiconductor wafer along the dicing line of the semiconductor wafer, so that the semiconductor wafer is cut without completely cutting the semiconductor wafer. A modified region is selectively formed at a predetermined depth from the surface of the wafer, and then back grinding is performed to a predetermined thickness while appropriately adjusting the grinding amount, and a plurality of strips are formed on the back grinding tape by the grinding load of the grinding wheel. Reorganized into semiconductor chips. Thereafter, a plurality of individual semiconductor chips on the backgrinding tape are attached to the dicing die bond film, transferred from the backgrinding tape to the dicing die bond film, and processed at low temperature (e.g., -30°C to 0°C). ) by expanding the dicing tape (hereinafter sometimes referred to as “cool expand”), the die bond film, which has become brittle at low temperature, is cut according to the shape of each semiconductor chip. . Finally, the adhesive layer of the dicing tape is peeled off by pickup to obtain a semiconductor chip with a die bond film.

In the above pickup process, after cutting a semiconductor wafer with a die bond film, the dicing tape is expanded at around room temperature (hereinafter sometimes referred to as “room temperature expand”) to form adjacent individual die bond films. Sagging in the circumferential portion of the dicing tape outside the semiconductor chip holding area that occurs when the gap between semiconductor chips (hereinafter sometimes referred to as “kerf width”) is widened and the expanded state is released after expansion. is removed by a heat shrink (hereinafter sometimes referred to as “heat shrink”) process, and the dicing tape is tensioned to maintain the kerf width, and then the cut individual die bond film-equipped semiconductor Chips can be picked up by peeling them from the adhesive layer of the dicing tape.

In Patent Document 1, the pressure-sensitive adhesive layer contains an acrylic polymer, and the acrylic polymer contains a structural unit of C9 to C11 alkyl (meth)acrylate and a structural unit of hydroxyl-containing (meth)acrylate, and a structural unit of C9 to C11 alkyl (meth)acrylate. A dicing tape containing 40 mol% to 85 mol% of structural units of (meth)acrylate is disclosed. The dicing tape of Patent Document 1 weakens the polarity of the acrylic polymer by using C9 to C11 alkyl (meth)acrylate, suppresses the affinity of the adhesive layer for the die bond film, and causes less push-up in the pickup process. Even with this small amount, the die bond film can be peeled off from the dicing tape with good results.

Japanese Patent Laid-open Publication No. 2020-194879

However, in recent years, as semiconductor wafers have become thinner, chip cracks have become more likely to occur during wire bonding in the multi-stage stacking process of semiconductor chips. As a solution to this problem, a wire-embedded die bond with a spacer function has been developed. A film is being proposed. The wire-embedded die bond film requires embedding wires without gaps during die bonding, and is thicker than the conventional general-purpose die bond film for fixing a semiconductor chip to the lead frame or wiring board described above. Because it tends to have high fluidity (low melt viscosity at high temperatures), when such a wire-embedded die-bond film is laminated on a conventional dicing tape and used for manufacturing semiconductor chips, the wire-embedded die-bond film is divided into individual pieces. Depending on the size of the semiconductor chip, there are cases where it cannot be divided neatly. As one of these measures, a dicing tape using a base material that has a higher tensile stress at low temperatures than a conventional dicing tape is applied, and a dicing tape is cool-expanded to the die bond film that is in close contact with the dicing tape. A method of applying sufficient splitting force (external stress) is considered. However, this method has the following new problems.

That is, in the cool expand process described above, a cutting force (external stress) is applied from the cool expanded dicing tape to the die bond film in close contact with the dicing tape, under the low temperature of the dicing tape. If the tensile stress is sufficient, the die bond film can be cut cleanly according to the size of the individual semiconductor chips, even if it is, for example, a wire-embedded die bond film that is difficult to cut as described above. However, on the other hand, in addition to the impact when the die-bond film is cut, stress in the direction away from the die-bond film due to expansion immediately after cutting is concentrated in the dicing tape portion between semiconductor chips, so it is necessary to widen the distance between semiconductor chips. In addition, in the die bond film corresponding to the size of the individual semiconductor chips, the edge portion (part around all directions) of the die bond film may partially peel off from the adhesive layer of the dicing tape. As the wiring circuit pre-formed on the surface of the semiconductor chip becomes more multilayered, the difference in thermal expansion coefficient between the wiring circuit and the material of the semiconductor chip also becomes a cause, making it easier for the semiconductor chip to bend, so the die at the edge of the die bond film There is a tendency for partial peeling from the adhesive layer of the adhesive tape to be promoted.

When the adhesive layer of the dicing tape is composed of an adhesive composition curable by active energy rays (e.g., ultraviolet rays), in order to reduce the adhesive strength of the adhesive layer before picking up the semiconductor chip with the die bond film from the dicing tape, the ultraviolet rays are used to reduce the adhesiveness of the adhesive layer. Irradiate to harden the adhesive layer. However, as described above, when the edge portion of the die bond film of the semiconductor chip with the die bond film is peeled from the adhesive layer of the dicing tape, the adhesive layer contacts oxygen in the air at the peeled portion, causing ultraviolet rays to be emitted. Even if irradiated, a reaction between the growing polymer radical and oxygen occurs, stopping the growth of the polymerization chain, and polymerization of the active energy ray-curable adhesive composition is inhibited, so the adhesive layer may not be sufficiently cured. In this case, since the adhesive strength of the adhesive layer is not sufficiently reduced, in the pickup process, a suction collet for pickup is placed on the semiconductor chip with a die-bonding film on the dicing tape located on the push-up jig from the top. When brought into contact with the surface of the semiconductor chip, the edge portion of the die-bond film of the semiconductor chip with a die-bond film, which had been peeled off from the adhesive layer of the dicing tape, was diced into the adhesive layer that was insufficiently cured by ultraviolet irradiation. Even by pushing up the jig from the lower surface of the tape and suction/lifting with the suction collet, the semiconductor chip with the die-bond film is strongly re-adhered to the point where it cannot be easily peeled off from the adhesive layer 2. Pickup of the provided semiconductor chip is impaired.

On the other hand, it is conceivable to eliminate the above-described partial peeling by strengthening the adhesive force of the adhesive layer to the die-bond film, but in this case, the force required to peel the die-bond film from the adhesive layer after ultraviolet ray irradiation during pickup is also higher. As the size increases, pickup performance tends to decrease, so it cannot be said to be a good solution.

In the above pickup process, when the die-bond film of the semiconductor chip with a die-bond film is peeled from the adhesive layer after ultraviolet irradiation of the dicing tape by pushing up the jig from the lower surface of the dicing tape, the amount of pushing up of the jig With the increase, peeling begins from the edge portion of the die bond film, and then peeling progresses from the edge portion toward the center. Normally, the force required for peeling of the first edge portion, in other words, the trigger for peeling, is applied. The power required to make it is the greatest.

From this perspective, it can be thought that the peeling of the edge portion of the die bond film already formed in the expand process before the pick-up process has an advantage in the progress of peeling in the pick-up process. However, as described above, due to the influence of curing failure due to oxygen interference peculiar to the adhesive layer composed of a conventional active energy ray-curable adhesive composition, in the pick-up process, the die located on the lifting jig When a semiconductor chip with a die-bonding film on a dicing tape is brought into contact and lands on the surface of the semiconductor chip with a pickup collet from the top, the die of the semiconductor chip with a die-bonding film is peeled off from the adhesive layer of the dicing tape. The edge portion of the bond film attaches the semiconductor chip with the die bond film to the adhesive layer, which is insufficiently cured by ultraviolet irradiation, by pushing up the jig from the lower surface of the dicing tape and by suction/lifting with the suction collet. Since it re-adheres strongly to the point where it cannot be easily peeled off from the layer (2), it has a disadvantageous effect.

Here, if it were possible to find a pressure-sensitive adhesive layer composed of an active energy ray-curable adhesive composition that is much less susceptible to oxygen interference compared to, for example, a pressure-sensitive adhesive layer composed of a conventional active energy ray-curable adhesive composition, the pickup process In the previous expand process, when peeling from the adhesive layer of the edge portion of the die-bond film of the semiconductor chip with the die-bond film is intentionally formed, the influence of the re-adhesion is greatly suppressed, that is, the dicing tape By pushing up the jig from the lower surface side and suction/lifting with the suction collet, the re-adhesion force is weakened to a level where the semiconductor chip with the die bond film can be easily peeled from the adhesive layer 2 after irradiation with ultraviolet rays. This can be done, and the force required to peel off the edge portion of the cut die bond film may be smaller than before, and there is a possibility that good pick-up properties can be obtained. However, during development, the dicing tape applied with an adhesive layer composed of an active energy ray-curable adhesive composition that is less susceptible to polymerization inhibition by oxygen is not conspicuous, and the die-bond film formed in such an expand process is not noticeable. There was room for consideration regarding the development of a dicing tape that makes it possible to take advantage of the peeling of the edge portion.

The present invention is to solve the above-mentioned conventional problems, and its objectives are (1) to cut the die bond film satisfactorily by cool expand, and to provide an edge portion of the cut die bond film ( (2) At the time of pickup, the edge portion of the die bond film in the state peeled from the adhesive layer is formed in a state where the adhesive layer is peeled off from the adhesive layer of the dicing tape after irradiation of ultraviolet rays The phenomenon of strong re-adherence to the layer to the point where it cannot be easily peeled off even by pushing up the dicing tape with a jig from the bottom side and suction/lifting with a suction collet is greatly suppressed, and the semiconductor chip with the die bond film is suppressed. The object is to provide a dicing tape and dicing die bond film with excellent pick-up properties. Additionally, another objective is to provide a method for manufacturing a semiconductor device using the dicing tape.

The present invention,

A dicing tape comprising a base film and an adhesive layer containing an active energy ray-curable adhesive composition on the base film,

The base film has an elastic modulus of Y _MD when stretched by 5% in the MD direction at 0°C (the flow direction at the time of forming the base film) and the TD direction at 0°C (direction perpendicular to the MD direction). When the elastic modulus at 5% elongation is Y _TD , the average value of the elastic modulus at each 5% elongation (Y _MD + Y _TD )/2 has a value in the range of 165 MPa to 260 MPa,

The active energy ray-curable adhesive composition includes an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, a photopolymerization initiator, and a polyisocyanate-based crosslinking agent that crosslinks with the hydroxyl group,

The acrylic adhesive polymer has a hydroxyl value in the range of 12.0 mgKOH/g or more and 40.5 mgKOH/g or less, and the polyisocyanate-based crosslinking agent is 2.4 parts by mass or more and 7.0 parts by mass or less with respect to 100 parts by mass of the acrylic adhesive polymer. The equivalence ratio (-NCO/-OH) between the isocyanate group (-NCO) of the polyisocyanate crosslinking agent and the hydroxyl group (-OH) of the acrylic adhesive polymer is adjusted to be within the range of 0.14 to 1.32. become,

The adhesive layer of the dicing tape has an adhesive strength A (integrated ultraviolet light amount: 150 mJ/m ² , peeling angle: 90°, peeling speed) after aerobic ultraviolet irradiation to a stainless steel plate (SUS304/BA plate) at 23°C. : 300 mm/min) is in the range of 3.50 N/25 mm or less, and the adhesive strength B after irradiation of ultraviolet rays under oxygen-free conditions to a stainless steel plate (SUS304·BA plate) at 23°C (integrated ultraviolet light quantity: 150 mJ/m ² , peeling angle : 90°, peeling speed: 300 mm/min) is in the range of 0.25 N/25 mm to 0.70 N/25 mm.

In one form, the base film is a resin film composed of a resin composition containing a polyamide resin (PA) and a thermoplastic crosslinked resin (IO) composed of an ionomer of an ethylene-unsaturated carboxylic acid-based copolymer.

In one embodiment, the active energy ray-curable adhesive composition includes, as the photopolymerization initiator, at least an α-aminoalkylphenone-based photopolymerization initiator (a), an alkylphenone-based photopolymerization initiator other than the α-aminoalkylphenone-based photopolymerization initiator ( It includes three types of photopolymerization initiators: b) and an acylphosphine oxide photopolymerization initiator (c).

In one embodiment, each of the α-aminoalkylphenone-based photopolymerization initiator (a), the alkylphenone-based photopolymerization initiator (b) other than the α-aminoalkylphenone-based photopolymerization initiator, and the acylphosphine oxide-based photopolymerization initiator (c). The content of the α-aminoalkylphenone photopolymerization initiator (a) is in the range of 0.8 parts by mass to 5.0 parts by mass, based on 100 parts by mass of the acrylic adhesive polymer. The photopolymerization initiator (b) is in the range of 0.2 parts by mass to 5.0 parts by mass, and the acylphosphine oxide-based photopolymerization initiator (c) is in the range of 0.2 parts by mass to 2.0 parts by mass.

In one embodiment, the ratio A/B of the adhesive force A after irradiation with ultraviolet rays under aerobic conditions to the adhesive force B after irradiation with ultraviolet rays under anaerobic conditions is in the range of 3.00 or more and 5.00 or less.

In one embodiment, the dicing tape expands a sheet-like laminate in which a die bond film and a plurality of individual semiconductor chips are sequentially stacked on the adhesive layer at a temperature of -30°C to 0°C. It is used to (stretch) and cut the die bond film according to the shape of the divided semiconductor chip.

In one form, the dicing tape expands the dicing tape to which the sheet-shaped laminate is attached at a temperature in the range of -30°C to 0°C to separate the dicing tape into separate semiconductor chips. When the die bond film is cut to fit the shape, the edge portion (part around all directions) of the die bond film is peeled off from the adhesive layer.

In one embodiment, the die bond film cut according to the shape of the divided semiconductor chip has a ratio of the area of the edge portion (part around all directions) of the die bond film peeled from the adhesive layer to the cut die. It is in the range of 10% to 45% of the total area of the bond film.

Additionally, the present invention provides a method for manufacturing a semiconductor device using the dicing tape.

According to the present invention, (1) the die bond film is cut satisfactorily by cool expand, and in the cut die bond film, the edge portion (part around all directions) is peeled from the adhesive layer of the dicing tape. is formed, and (2) at the time of pickup, the edge portion of the die-bond film in a state peeled from the adhesive layer is pushed up with a jig from the lower surface of the dicing tape onto the adhesive layer after irradiation with ultraviolet rays of the dicing tape. And the phenomenon of strong re-adherence to the point where it cannot be easily peeled off even by suction and lifting with a suction collet is greatly suppressed, and a dicing tape with excellent pick-up properties is provided. Additionally, a method for manufacturing a semiconductor device using the dicing tape is provided.

1 is a cross-sectional view showing an example of the configuration of the base film of the dicing tape to which this embodiment is applied.
Figure 2 is a cross-sectional view showing an example of the configuration of a dicing tape to which this embodiment is applied.
Figure 3 is a cross-sectional view showing an example of a dicing die bond film configured by bonding a dicing tape to which this embodiment is applied to a die bond film.
Figure 4 is a schematic view from directly above of a peel-off angle independent type adhesive/film peel analysis device for measuring the adhesive force of a dicing tape.
Figure 5 is a flow chart explaining the manufacturing method of the dicing tape.
Figure 6 is a flow chart explaining the manufacturing method of a semiconductor chip.
Figure 7 is a perspective view showing a state in which a ring frame (wafer ring) is attached to the edge of the dicing die bond film and a semiconductor wafer divided into pieces is attached to the center of the die bond film.
8(a) to 8(f) are cross-sectional views showing an example of a grinding process for a semiconductor wafer in which a plurality of modified regions are formed by laser light irradiation and a bonding process for a plurality of cut semiconductor wafers to a dicing die bond film. am.
9(a) to 9f are cross-sectional views showing an example of manufacturing a semiconductor chip using a plurality of cut thin semiconductor wafers bonded with a dicing die bond film.
Fig. 10 is an enlarged cross-sectional view showing an example of a state in which the edge portion (peripheral portion) of the cut die bond film is partially peeled from the adhesive layer of the dicing tape.
Fig. 11 is an enlarged plan view of a state in which the edge portion (around all directions) of the cut die bond film is partially peeled from the adhesive layer of the dicing tape, observed from the back side of the semiconductor chip (base film side).
Fig. 12 is a schematic cross-sectional view of one aspect of a semiconductor device with a laminated structure using a semiconductor chip manufactured using a dicing die bond film configured by bonding a dicing tape to which this embodiment is applied to a die bond film.
Fig. 13 is a schematic cross-sectional view of another semiconductor device using a semiconductor chip manufactured using a dicing die bond film configured by bonding a dicing tape to which this embodiment is applied to a die bond film.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as necessary. However, the present invention is not limited to the following embodiments.

<Composition of dicing tape and dicing die bond film>

1(a) to 1(d) are cross-sectional views showing an example of the configuration of the base film 1 of the dicing tape to which this embodiment is applied. The base film 1 of the dicing tape of this embodiment may be a single layer of a single resin composition (see (a) 1-A in Fig. 1), or may be a laminate consisting of multiple layers of the same resin composition (see (a) in Fig. 1). b) 1-B) may be used, or may be a laminate composed of multiple layers of different resin compositions (see (c) 1-C and (d) 1-D in FIG. 1). In the case of a laminate consisting of multiple layers, the number of layers is not particularly limited, but is preferably in the range of 2 to 5 layers.

Fig. 2 is a cross-sectional view showing an example of the structure of a dicing tape to which this embodiment is applied. As shown in FIG. 2, the dicing tape 10 has a configuration including an adhesive layer 2 on the first surface of the base film 1. In addition, although not shown in the drawing, the surface of the adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1) is provided with a base sheet (release liner) having release properties. You can do it. The base film 1 has an elastic modulus when stretched by 5% in the MD direction at 0°C (the flow direction at the time of forming the base film) as Y _MD and the TD direction at 0°C (perpendicular to the MD direction). When the elastic modulus at 5% elongation in each direction is Y _TD , the average value of the elastic modulus at each 5% elongation (Y _MD + Y _TD )/2 is composed of a resin film having a value in the range of 165 MPa to 260 MPa. As the adhesive forming the adhesive layer 2, for example, an active energy ray-curable acrylic adhesive, which hardens and shrinks when irradiated with active energy rays such as ultraviolet rays (UV) and reduces adhesive strength to the adherend, is used. .

The dicing tape 10 of this structure is used, for example, as follows in a semiconductor manufacturing process. On the adhesive layer 2 of the dicing tape 10, a plurality of individual pieces are obtained by back grinding a semiconductor wafer with dividing grooves formed on the surface by a blade or a semiconductor wafer with a modified layer formed on the inside by a laser. The semiconductor chip is held (temporarily fixed) by attaching it through a die bond film (adhesive layer), the die bond film is cut according to the shape of each individual semiconductor chip by cool expand, and then expanded at room temperature. The kerf width between semiconductor chips is sufficiently expanded by the pan and heat shrink process, and the individual semiconductor chips with the die bond film are peeled from the adhesive layer 2 of the dicing tape 10 by the pick-up process. The obtained semiconductor chip with die bond film is fixed to an adherend such as a lead frame, a wiring board, or another semiconductor chip.

FIG. 3 is a cross-sectional view showing an example of a so-called dicing die bond film, which is a structure in which the dicing tape 10 to which this embodiment is applied is bonded and integrated with the die bond film (adhesive film) 3. As shown in FIG. 3, the dicing die bond film 20 is configured such that a die bond film (adhesive film) 3 is peelably adhered and laminated on the adhesive layer 2 of the dicing tape 10. has.

The dicing die bond film 20 of this structure is used, for example, as follows in a semiconductor manufacturing process. The dicing die bond film 20 is obtained by back grinding a semiconductor wafer with split grooves formed on the surface by a blade or a semiconductor wafer with a modified layer formed on the inside by a laser on the die bond film 3. The individual semiconductor chips are attached and held (adhered), and the die bond film 3, which has become brittle at a low temperature by cool expand, is cut according to the shape of the individual semiconductor chips, and the individual die Obtain a semiconductor chip equipped with a bond film. Next, after sufficiently expanding the kerf width between semiconductor chips with die bond film through a room temperature expand and heat shrink process, each semiconductor chip with die bond film is placed on the adhesive layer of the dicing tape 10 through a pickup process. Peel from (2). The semiconductor chip provided with the die-bond film (adhesive film) 3 is adhered to an adherend such as a lead frame, a wiring board, or another semiconductor chip via the die-bond film (adhesive film) 3. In addition, although not shown in the drawing, the surface of the adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1) and the surface of the die bond film 3 (the adhesive layer The surface opposite to the surface facing (2) may be provided with a base material sheet (release liner) having release properties, and may be peeled appropriately during use.

<Dicing Tape>

(Base film)

The base film 1, which is the first component of the dicing tape 10 of the present invention, will be described below.

[Elastic modulus at 5% elongation at 0°C of base film]

The base film 1 has an elastic modulus of Y _MD when stretched by 5% in the MD direction at 0°C (the flow direction at the time of forming the base film), and in the TD direction at 0°C (perpendicular to the MD direction). When the elastic modulus at 5% elongation in the phosphorus direction is referred to as Y _TD , the average value of the elastic modulus at each 5% elongation (Y _MD + Y _TD )/2 is a resin film having a value in the range of 165 MPa to 260 MPa. The average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0°C of the base film 1 is preferably in the range of 190 MPa or more and 240 MPa or less. Likewise, the average value is preferably 165 MPa or more, and more preferably 190 MPa or more. Moreover, the average value is preferably 260 MPa or less, and more preferably 240 MPa or less.

When the average value (Y _MD + Y _TD )/2 of the elastic modulus upon 5% stretching at 0°C of the base film 1 is less than 165 MPa, even if the dicing tape 10 is expanded, it moves away from the cut die-bond film. Since it becomes difficult for directional stress to act, in the cut die bond film, a state partially peeled from the adhesive layer 2 of the dicing tape 10 will not be formed at the edge portion (part around all directions). There are concerns. In addition, at low temperatures, even if external stress is added to the dicing tape 10 by expanding, it is not sufficiently transmitted to the die bond film 3. Therefore, especially when using a wire-embedded die bond film, the cool expand process is necessary. Therefore, there is a risk that the die bond film 3 may not be cut satisfactorily. Additionally, if the value of (Y _MD + Y _TD )/2 is excessively small, the dicing tape 10 may become soft and handling may become difficult, or a sufficient kerf width may not be secured. As a result, the effect of improving pickup performance is not seen compared to the prior art, or the pickup performance deteriorates.

On the other hand, if the average value (Y _MD + Y _TD )/2 of the elastic modulus of the base film 1 upon 5% elongation at 0°C exceeds 260 MPa, there is a risk that expansion of the dicing tape 10 may become difficult. There is. Even if it were possible to expand, the die bond film 3 would peel excessively from the adhesive layer 2 during the expansion, causing sufficient external stress to be exerted on the die bond film 3 through the adhesive layer 2. Since it cannot be applied approximately uniformly, there is a risk that the die bond film 3 cannot be cut cleanly, a sufficient kerf width cannot be secured, or the kerf width may become non-uniform. In addition, in the pickup process, when the excessively peeled die bond film reattaches to the adhesive layer 2, the reattachment area becomes excessively large, so that the adhesive layer 2 has an active energy that satisfies the requirements of the present invention. Even if it is composed of a pre-curable adhesive composition, in order to peel the dicing tape 10 by pushing it up with a jig from the lower surface, there is a risk that a large amount of energy is required due to the large reattachment area. As a result, the pick-up performance of the semiconductor chip with the die bond film deteriorates.

The average value (Y _MD + Y _TD )/2 of the elastic modulus upon 5% elongation at 0°C of the base film 1 is in the range of 165 MPa or more and 260 MPa or less, so that the dicing tape 10 is cool expandable. In the process, sufficient external stress can be applied to the die bond film 3 to cleave the die bond film 3 that is in close contact with the adhesive layer 2 containing a specific active energy ray-curable adhesive composition described later. In addition, with respect to the adhesive layer 2 of the dicing tape 10, a die bond is required to intentionally form an appropriate peeling state between the edge portion of the cut die bond film and the adhesive layer 2. Stress may be applied in a direction away from the film 3. In addition, in this case, since the stress applied to the die bond film 3 and the adhesive layer 2 is appropriately suppressed, the cut die bond film does not peel excessively from the adhesive layer 2, and the kerf width can be sufficiently secured, and damage caused by collision between semiconductor chips and displacement from the fixed position on the adhesive layer 2 can be avoided. In this case, if the adhesive layer 2 is composed of an active energy ray-curable adhesive composition that satisfies the requirements of the present invention, the pick-up performance of the semiconductor chip with a die-bond film can be made superior to that of the prior art.

The elastic modulus Y _MD at 5% stretching in the MD direction and the elastic modulus Y _TD at 5% stretching in the TD direction at 0°C of the base film 1 in the present invention are measured by the following methods. Specifically, first, a test piece with a length of 100 mm (MD direction) and a width of 10 mm (TD direction) as a sample for MD direction measurement (number of samples N = 5), and a sample for TD direction measurement (number of samples N = 5). =5), test pieces with a length of 100 mm (TD direction) and a width of 10 mm (MD direction) were prepared. Subsequently, using a tensile compression tester manufactured by Minebea Mitsumi Co., Ltd. (Model: Minebea Techno Graph TG-5kN), both ends of the test piece in the longitudinal direction are fixed with chucks so that the initial distance between the chucks is 20 mm, and the test piece is tested with a Minebea Mitsumi Co., Ltd. tester. After placing it in a thermostat manufactured by Co., Ltd. (Model: THB-A13-038) at 0°C for 1 minute, a tensile test is performed at a speed of 100 mm/min to obtain a tensile load-elongation curve. And, from the obtained tensile load-elongation curve, the origin (elongation start point) and the tensile load value (unit: N) on the curve corresponding to 1.0 mm elongation from the origin (5% elongation with respect to the initial distance between the chucks of 20 mm) Calculate the slope of the straight line connecting the points, using the following equation

Elastic modulus Y at 5% elongation (unit: MPa) = (slope) × [(initial distance between chucks) / (cross-sectional area of test specimen)]

The elastic modulus Y upon 5% elongation of the base film (1) is determined from .

Measurements are made with the number of samples N = 5 in each direction, and the average values are referred to as elastic modulus Y _MD at 5% elongation in the MD direction and Y _TD at 5% elongation in the TD direction, respectively. The average value of the elastic modulus (Y _MD + Y _TD )/2 of the base film 1 in the present invention upon 5% elongation at 0°C is a value calculated using each of the above values.

[Resin composition constituting the base film]

As the resin composition constituting the base film 1, in particular, as long as the average value of the elastic modulus (Y _MD + Y _TD )/2 at 5% elongation at 0°C of the base film 1 is within the above range, Although it is not limited, it is preferable that it is a resin composition containing a thermoplastic crosslinked resin from the viewpoint of both expandability and heat shrinkability. Specifically, the resin composition contains, for example, a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid-based copolymer (hereinafter sometimes simply referred to as “ionomer”). compositions, or resin compositions containing thermoplastic crosslinked resins (IO) and polyamide resins (PA) made of ionomers of ethylene-unsaturated carboxylic acid-based copolymers. The resin film formed using these resin compositions can be suitably used as the base film 1. Among these resin compositions, the dicing tape 10 using the above-described base film needs to be particularly suitable for application to wire-embedded die bond films, and is a dicing tape ( 10) A thermoplastic crosslinked resin (IO) and a polyamide resin (PA) made of an ionomer of an ethylene-unsaturated carboxylic acid-based copolymer (hereinafter sometimes simply referred to as “ionomer”), which makes it possible to provide A resin composition containing

The total amount of the thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer and the polyamide resin (PA) in the entire base film (1) is 0°C of the base film (1). The average value of the elastic modulus at 5% elongation (Y _MD + Y _TD )/2 is not particularly limited as long as it is within the above range, but is 65% by mass based on the total amount of the resin composition constituting the entire base film 1. It is preferable that it accounts for a ratio of 100% by mass or less. More preferably, it is 75 mass% or more and 100 mass% or less, and particularly preferably, it is 85 mass% or more and 100 mass% or less.

The dicing tape 10 using the base film 1 of this configuration has the die-bond film 3 in close contact with the adhesive layer 2, and the die-bond film 3 is formed by stretching at a low temperature. Since an appropriate breaking force (external stress) can be applied to the semiconductor device manufacturing process, it is preferable for use in the cool expand process and even the room temperature expand process. That is, by the cool expand process, the die bond film 3 is well cut according to the shape of each individual semiconductor chip that has already been separated into individual pieces, and individual semiconductor chips with a predetermined size of die bond film are obtained with good yield. desirable. Then, by the cool expansion of the continuous dicing tape 10 immediately after cutting the die bond film 3, the adhesive layer 2 of the dicing tape 10 is separated from each cut die bond film. Since appropriate stress in the away direction can also be applied, in each cut die bond film, the edge portion (portion around all directions) is appropriately left partially peeled from the adhesive layer 2 of the dicing tape 10. It is also desirable to form it intentionally. In addition, even in the room temperature expand process, the expandability necessary to secure a sufficient kerf width between semiconductor chips is maintained.

[Resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid-based copolymer and a polyamide resin (PA)]

As the base film (1) in the present invention, as described above, a resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid-based copolymer and a polyamide resin (PA). A resin film comprised of is mentioned as a preferable aspect. The thermoplastic crosslinked resin (IO) and polyamide resin (PA) composed of ionomers of these ethylene-unsaturated carboxylic acid-based copolymers will be described below.

[Thermoplastic crosslinked resin (IO) consisting of an ionomer of ethylene-unsaturated carboxylic acid-based copolymer]

In the base film 1 of the present embodiment, the thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid-based copolymer contains some or all of the carboxyl groups of the ethylene-unsaturated carboxylic acid-based copolymer. It is a resin that has been neutralized (crosslinked) with (ions). In addition, in the following description, “thermoplastic crosslinked resin consisting of an ionomer of an ethylene-unsaturated carboxylic acid-based copolymer” may be referred to as “resin consisting of an ionomer,” or simply as “ionomer.”

The ethylene-unsaturated carboxylic acid-based copolymer constituting the ionomer may be at least a binary copolymer of ethylene and an unsaturated carboxylic acid, and may also be a ternary or more multi-membered copolymer of a third copolymerization component. In addition, the ethylene/unsaturated carboxylic acid-based copolymer may be used individually, or two or more types of ethylene/unsaturated carboxylic acid-based copolymers may be used in combination.

Examples of the unsaturated carboxylic acid constituting the ethylene/unsaturated carboxylic acid binary copolymer include acrylic acid, methacrylic acid, ethacrylic acid, itaconic acid, itaconic anhydride, fumaric acid, crotonic acid, maleic acid, and maleic anhydride. and unsaturated carboxylic acids having 4 to 8 carbon atoms. In particular, acrylic acid or methacrylic acid is preferred.

When the ethylene-unsaturated carboxylic acid-based copolymer is a three-membered or more multivalent copolymer, in addition to the ethylene and unsaturated carboxylic acid that constitute the binary copolymer, it may also contain a third copolymerization component that forms the multivalent copolymer. As the third copolymerization component, unsaturated carboxylic acid esters (e.g., methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, isooctyl acrylate, methyl methacrylate, ethyl methacrylate, isobutyl methacrylate, (meth)acrylic acid alkyl esters with 1 to 12 carbon atoms at the alkyl portion, such as dimethyl maleate and diethyl maleate), unsaturated hydrocarbons (e.g., propylene, butene, 1,3-butadiene, pentene, 1,3- pentadiene, 1-hexene, etc.), vinyl esters (e.g., vinyl acetate, vinyl propionate, etc.), oxides such as vinyl sulfate and vinyl nitric acid, halogen compounds (e.g., vinyl chloride, vinyl fluoride, etc.), vinyl groups Containing primary and secondary amine compounds, carbon monoxide, sulfur dioxide, etc. are mentioned, and unsaturated carboxylic acid ester is preferable as these copolymerization components.

The form of the ethylene-unsaturated carboxylic acid-based copolymer may be any of block copolymers, random copolymers, and graft copolymers, and may be any of binary copolymers and terpolymers. Among them, binary random copolymers, tertiary random copolymers, graft copolymers of binary random copolymers, or graft copolymers of tertiary random copolymers are preferred in terms of industrial availability, and binary random copolymers are preferred. A polymer or ternary random copolymer is more preferable, and from the viewpoint of expandability, a terpolymer random copolymer that is difficult to neck when expanding is particularly preferable.

Specific examples of the ethylene/unsaturated carboxylic acid-based copolymer include binary copolymers such as ethylene/acrylic acid copolymer, ethylene/methacrylic acid copolymer, and 3 copolymers such as ethylene/methacrylic acid/acrylic acid 2-methyl-propyl copolymer. and original copolymers. Additionally, commercially available ethylene-unsaturated carboxylic acid-based copolymers may be used, for example, the Nucrel series (registered trademark) manufactured by Mitsui DuPont Polychemical Co., Ltd., etc.

The copolymerization ratio (mass ratio) of the unsaturated carboxylic acid ester in the ethylene-unsaturated carboxylic acid-based copolymer is preferably in the range of 1% by mass to 20% by mass, and expandability in the expand process, and From the viewpoint of heat resistance (blocking, fusion), it is more preferable that it is in the range of 5 mass% or more and 15 mass% or less. In this way, the copolymerization ratio is preferably 1% by mass or more, and more preferably 5% by mass or more. Moreover, the copolymerization ratio is preferably 20% by mass or less, and more preferably 15% by mass or less.

In the base film 1 of the present embodiment, the ionomer used as the resin (IO) is one in which the carboxyl groups contained in the ethylene-unsaturated carboxylic acid-based copolymer are crosslinked (neutralized) at a certain ratio by metal ions. desirable. Examples of metal ions used to neutralize acid radicals include metal ions such as lithium ions, sodium ions, potassium ions, rubidium ions, cesium ions, zinc ions, magnesium ions, and manganese ions. Among these metal ions, magnesium ions, sodium ions, and zinc ions are preferable, and sodium ions and zinc ions are more preferable because of the ease of availability of industrialized products.

The degree of neutralization of the ethylene-unsaturated carboxylic acid-based copolymer in the ionomer is preferably in the range of 20 mol% to 85 mol%, and more preferably in the range of 50 mol% to 82 mol%, It is especially preferable that it is in the range of 65 mol% or more and 80 mol% or less. Likewise, the degree of neutralization is preferably 20 mol% or more, more preferably 50 mol% or more, and particularly preferably 65 mol% or more. Moreover, the degree of neutralization is preferably 85 mol% or less, more preferably 82 mol% or less, and especially preferably 80 mol% or less. By setting the degree of neutralization to 20 mol% or more, the cleavability of the die bond film 3 can be further improved, and the heat shrinkability of the dicing tape 10 in the heat shrinking process described later can also be improved. By setting it to 85 mol% or less, the film forming properties of the film can be improved. In addition, the degree of neutralization refers to the mixing ratio (mol%) of metal ions relative to the number of moles of acid groups, especially carboxyl groups, possessed by the ethylene-unsaturated carboxylic acid-based copolymer.

The resin (IO) made of the ionomer has a melting point of about 85 to 100°C, but the melt flow rate (MFR) of the resin (IO) made of the ionomer is 0.2 g/10 minutes or more and 20.0 g/10 minutes. The range is preferably 10 minutes or less, more preferably 0.5 g/10 minutes or more and 20.0 g/10 minutes or less, and more preferably 0.5 g/10 minutes or more and 18.0 g/10 minutes or less. If the melt flow rate is within the above range, film forming properties as the base film 1 become good. In this way, the MFR is preferably 0.2 g/10 minutes or more, and more preferably 0.5 g/10 minutes or more. Moreover, it is preferable that it is 20.0 g/10 minutes or less, and it is more preferable that it is 18.0 g/10 minutes or less. In addition, MFR is a value measured at 190°C and a load of 2160 g by a method based on JIS K7210-1999.

The resin composition constituting the base film 1 of this embodiment preferably contains a polyamide resin (PA) in addition to the resin (IO) made of the ionomer of the ethylene-unsaturated carboxylic acid-based copolymer described above. . The mass ratio (IO):(PA) of the resin (IO) made of the ionomer of the ethylene-unsaturated carboxylic acid-based copolymer and the polyamide resin (PA) is preferably in the range of 72:28 to 95:5. . By configuring the base film 1 with a resin composition mixed so as to have the above mass ratio, the average value of the elastic modulus at 5% elongation at 0°C (Y _MD + Y _TD )/2 of the base film 1 is calculated as above. It becomes easy to adjust to the described range. The mass ratio (IO):(PA) is more preferably in the range of 74:26 to 92:8, and even more preferably in the range of 80:20 to 90:10. The upper and lower limits of the numerical ranges in this specification can be arbitrarily selected and combined.

[Polyamide resin (PA)]

Examples of the polyamide resin (PA) include carboxylic acids such as oxalic acid, adipic acid, sebacic acid, dodecanoic acid, terephthalic acid, isophthalic acid, and 1,4-cyclohexanedicarboxylic acid, ethylenediamine, and tetramethylene. Polycondensates with diamines such as diamine, pentamethylenediamine, hexamethylenediamine, decamethylenediamine, 1,4-cyclohexyldiamine, and m-xylylenediamine, cyclic (epsilon) such as ε-caprolactam and ω-laurolactam (環狀) Lactam ring-opened polymer, polycondensate of aminocarboxylic acid such as 6-aminocaproic acid, 9-aminononanoic acid, 11-aminoundecanoic acid, 12-aminododecanoic acid, or the above cyclic lactam, dicarboxylic acid, and diamine and copolymers of and the like.

The polyamide resin (PA) may be a commercially available product. Specifically, nylon 4 (melting point 268°C), nylon 6 (melting point 225°C), nylon 46 (melting point 240°C), nylon 66 (melting point 265°C), nylon 610 (melting point 222°C), nylon 612 (melting point 215°C). ), nylon 6T (melting point 260°C), nylon 11 (melting point 185°C), nylon 12 (melting point 175°C), copolymer nylon (e.g., nylon 6/66, nylon 6/12, nylon 6/610, nylon 66/12, nylon 6/66/610, etc.), nylon MXD6 (melting point 237°C), nylon 46, etc. Among these polyamides, nylon 6 and nylon 6/12 are preferable from the viewpoint of film forming properties and mechanical properties as the base film 1.

As described above, the content of the polyamide resin (PA) is the resin (IO) made of the ionomer of the ethylene-unsaturated carboxylic acid-based copolymer and the polyamide resin (PA) in the entire base film 1 as described above. ) and the mass ratio (IO):(PA) is preferably in the range of 72:28 to 95:5. When the mass ratio of the polyamide resin (PA) is less than the above range, especially when the degree of neutralization by metal ions of the ionomer of the ethylene-unsaturated carboxylic acid-based copolymer is low, the base film (1) (dicing tape ( 10)) The effect of increasing the elongation elastic modulus under low temperature becomes insufficient, and an appropriate splitting force (external stress) cannot be applied to the die bond film 3 even if stretched at low temperature. There is a risk that it will not be possible to divide it neatly. In addition, even if the base film 1 (dicing tape 10) is expanded, it becomes difficult for stress in the direction away from the cut die-bond film to act, so in the cut die-bond film, the edge portion (around all directions) becomes difficult. There is a risk that a state partially peeled off from the adhesive layer 2 of the dicing tape 10 may not be formed.

On the other hand, when the mass ratio of the polyamide resin (PA) exceeds the above range, stable film forming may become difficult depending on the resin composition of the base film 1. Additionally, when the base film 1 is stretched by 5% at low temperature, the increase in elastic modulus becomes excessive, and there is a risk that expansion of the dicing tape 10 may become difficult. Furthermore, even if it were possible to expand, the die bond film 3 would be excessively peeled off from the adhesive layer 2 during expansion, causing sufficient external stress to occur through the adhesive layer 2 in the die bond film 3. cannot be provided, there is a risk that the die bond film 3 cannot be cut cleanly, a sufficient kerf width cannot be secured, or the kerf width may become uneven. In addition, there is a concern that the flexibility of the base film 1 may be impaired, making it impossible to maintain the expandability of the dicing tape 10 in the room temperature expand process, or when picking up a semiconductor chip with a die bond film. There is a risk of pickup defects due to cracks, etc. The content of the polyamide resin (PA) is the mass ratio of the polyamide resin (PA) and the resin (IO) made of the ionomer of the ethylene-unsaturated carboxylic acid-based copolymer in the entire base film 1 ( It is more preferable that IO):(PA) is in the range of 74:26 to 92:8, and more preferably in the range of 80:20 to 90:10.

In addition, when the base film 1 is a laminate consisting of multiple layers, the mass ratio between the resin (IO) made of the ionomer of the ethylene-unsaturated carboxylic acid-based copolymer and the polyamide resin (PA) means that in each layer From the mass ratio of the resin (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid-based copolymer and the polyamide resin (PA), and the mass ratio of each layer in the entire base film (1) (laminated body) It means the calculated value for the entire base film (1) (laminated body).

If the mass ratio of the resin (IO) made of an ionomer of ethylene-unsaturated carboxylic acid-based copolymer and the polyamide resin (PA) in the entire base film (1) is within the above range, the mass ratio of the base film (1) is 0. It becomes easy to adjust the average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation in °C to a range of 165 MPa or more and 260 MPa or less. As a result, in the cool expand process, the dicing tape 10 cleaves the die bond film 3 that is in close contact with the adhesive layer 2 containing a specific active energy ray-curable adhesive composition described later. In addition to being able to apply sufficient external stress to the die bond film 3, the edge portion of the cut die bond film and the adhesive layer 2 with respect to the adhesive layer 2 of the dicing tape 10. It is also possible to apply stress in a direction away from the die bond film 3 necessary to form an appropriate peeling state. In addition, in this case, since the stress applied to the die bond film 3 and the adhesive layer 2 is appropriately suppressed, the cut die bond film does not peel excessively from the adhesive layer 2, and the kerf width can be sufficiently secured, and damage caused by collision between semiconductor chips and displacement from the fixed position on the adhesive layer 2 can be avoided. In this case, if the adhesive layer 2 is composed of an active energy ray-curable adhesive composition that satisfies the requirements of the present invention, the pick-up performance of the semiconductor chip with a die bond film can be made more excellent than in the past.

〔etc〕

Other resins and various additives may be added to the resin composition constituting the base film 1 as needed, within a range that does not impair the effects of the present invention. Examples of the other resins include polyolefins such as polyethylene and polypropylene, ethylene-unsaturated carboxylic acid-based copolymers, and polyether esteramide. Such other resins can be blended at a ratio of, for example, 20 parts by mass based on a total of 100 parts by mass of the resin (IO) made of the ionomer of the ethylene-unsaturated carboxylic acid-based copolymer and the polyamide resin (PA). You can. In addition, the above additives include, for example, antistatic agents, antioxidants, heat stabilizers, light stabilizers, ultraviolet absorbers, pigments, dyes, lubricants, anti-blocking agents, anti-fungal agents, antibacterial agents, flame retardants, flame retardant aids, cross-linking agents, cross-linking aids, and foaming agents. , foaming aids, inorganic fillers, fiber reinforcements, etc. These various additives can be blended at a ratio of, for example, 5 parts by mass based on a total of 100 parts by mass of the resin (IO) made of the ionomer of the ethylene-unsaturated carboxylic acid copolymer and the polyamide resin (PA). You can.

[Thickness of base film]

The thickness of the base film 1 is not particularly limited, but considering its use as the dicing tape 10, it is preferably in the range of, for example, 70 μm or more and 120 μm or less. More preferably, it is in the range of 70 ㎛ or more and 110 ㎛ or less. If the thickness of the base film 1 is less than 70 μm, there is a risk that the ring frame (wafer ring) will be insufficiently held when the dicing tape 10 is subjected to the dicing process. Additionally, if the thickness of the base film 1 is greater than 120 μm, there is a risk that the bending of the base film 1 due to release of residual stress during film formation may increase.

[Layer composition of base film]

The layer structure of the base film 1 is not particularly limited, and may be a single layer of a single resin composition, a laminate composed of multiple layers of the same resin composition, or a laminate composed of multiple layers of different resin compositions. . In the case of a laminate consisting of multiple layers, the number of layers is not particularly limited, but is preferably in the range of 2 to 5 layers.

When the base film 1 is made into a laminate composed of multiple layers, for example, the layer to be formed using the resin composition of the present embodiment may be laminated, and the film may be formed using the resin composition of the present embodiment. The structure may be such that a layer formed into a film using a resin composition other than the resin composition of this embodiment is laminated on the layer formed.

Layers formed using the above-mentioned other resin compositions include, for example, linear low-density polyethylene (LLDPE), low-density polyethylene (LDPE), ethylene-α olefin copolymer, polypropylene, ethylene-unsaturated carboxylic acid copolymer, ethylene- Unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymer, ethylene/unsaturated carboxylic acid alkyl ester copolymer, ethylene/vinyl ester copolymer, ethylene/unsaturated carboxylic acid alkyl ester/carbon monoxide copolymer, or unsaturated carboxylic acid graft products thereof. A layer formed into a film using a resin composition selected from the following, such as a single substance or a blend of any plurality, and the ionomer (IO) of the ethylene-unsaturated carboxylic acid-based copolymer, can be mentioned. Among these, from the viewpoint of adhesion and versatility with the resin layer made of a mixture of a resin (IO) made of an ionomer of the ethylene/unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA), ethylene/unsaturated carboxylic acid-based copolymer Preferred are main acid copolymers, ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymers, ethylene/unsaturated carboxylic acid alkyl ester copolymers and ionomers of these copolymers, and ethylene-α olefin copolymers.

As an example of the case where the base film 1 of this embodiment has a laminated structure, specifically, base films such as the following two-layer structure or three-layer structure can be mentioned.

As for a two-story structure, for example.

(1) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)]/[Ethylene/unsaturated carboxylic acid copolymer of the present embodiment] [Second resin layer made of a mixture of a resin (IO1) made of an ionomer of a carboxylic acid-based copolymer and a polyamide resin (PA1)],

(2) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)]/[Ethylene/unsaturated carboxylic acid copolymer of the present embodiment] A second resin layer made of a mixture of a resin (IO2) made of an ionomer of a carboxylic acid-based copolymer and a polyamide resin (PA2)],

(3) [First resin layer made of resin (IO1) made of ionomer of ethylene-unsaturated carboxylic acid-based copolymer]/[Resin (IO1) made of resin (IO1) made of ionomer of ethylene-unsaturated carboxylic acid-based copolymer of the present embodiment ) and a second resin layer consisting of a mixture of polyamide resin (PA1)],

(4) [First resin layer made of ethylene-unsaturated carboxylic acid-based copolymer]/[Resin (IO1) made of ionomer of ethylene-unsaturated carboxylic acid-based copolymer of the present embodiment and polyamide resin (PA1) [second resin layer consisting of mixture],

and a two-layer structure ([first resin layer]/[second resin layer]) consisting of the same resin layer or different resin layers.

As a three-layer structure, for example,

(5) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)]/[Ethylene/unsaturated carboxylic acid copolymer of the present embodiment] Second resin layer made of a mixture of resin (IO1) made of ionomer of carboxylic acid-based copolymer and polyamide resin (PA1)]/[Resin made of ionomer of ethylene-unsaturated carboxylic acid-based copolymer of the present embodiment (3rd resin layer consisting of a mixture of (IO1) and polyamide resin (PA1)],

(6) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)]/[Ethylene/unsaturated carboxylic acid copolymer of the present embodiment] Second resin layer made of a mixture of resin (IO2) made of ionomer of carboxylic acid-based copolymer and polyamide resin (PA2)]/[Resin made of ionomer of ethylene-unsaturated carboxylic acid-based copolymer of this embodiment (3rd resin layer consisting of a mixture of (IO1) and polyamide resin (PA1)],

(7) [First resin layer made of a mixture of polyamide resin (PA1) and resin (IO1) made of the ionomer of the ethylene-unsaturated carboxylic acid-based copolymer of the present embodiment]/[Ethylene-unsaturated carboxylic acid-based copolymer Second resin layer made of resin (IO1) made of polymerized ionomer]/[A mixture of resin (IO1) made of resin (IO1) made of ionomer of the ethylene-unsaturated carboxylic acid-based copolymer of the present embodiment and polyamide resin (PA1) third resin layer],

(8) [First resin layer composed of a mixture of polyamide resin (PA1) and resin (IO1) composed of the ionomer of the ethylene-unsaturated carboxylic acid-based copolymer of the present embodiment]/[Ethylene-unsaturated carboxylic acid-based copolymer Second resin layer made of polymer]/[Third resin layer made of a mixture of resin (IO1) made of ionomer of the ethylene-unsaturated carboxylic acid-based copolymer of the present embodiment and polyamide resin (PA1)],

(9) [First resin layer made of a mixture of polyamide resin (PA1) and resin (IO1) made of the ionomer of the ethylene-unsaturated carboxylic acid copolymer of the present embodiment] / [Ethylene-α olefin copolymer 2nd resin layer consisting of]/[3rd resin layer consisting of a mixture of resin (IO1) consisting of the ionomer of the ethylene-unsaturated carboxylic acid-based copolymer of the present embodiment and polyamide resin (PA1)],

A three-layer structure ([1st resin layer]/[2nd resin layer]/[3rd resin layer]) consisting of the same resin layer or a different type of resin layer, such as the like, can be mentioned.

[Method of forming base film]

As a film forming method for the base film 1 of this embodiment, a conventional method can be adopted. A resin composition obtained by melting and kneading ionomer resin (IO), polyamide resin (PA), and other components as needed is used, for example, by T die cast molding method, T die nip molding method, inflation molding method, extrusion laminate method, and calendering method. It may be processed into a film shape using various molding methods such as molding. In addition, when the base film 1 is a laminate composed of multiple layers, each layer is formed into a film by means such as calendar molding, extrusion, or inflation molding, and then they are thermally laminated or bonded with an adhesive as appropriate. A laminate can be manufactured by stacking. Examples of the adhesive include the various ethylene copolymers described above, or a blend selected from these unsaturated carboxylic acid grafts, either alone or in arbitrary plurality. Additionally, a laminate can be manufactured by simultaneously extruding the resin composition of each layer using a coextrusion laminate method. In addition, the surface of the base film 1 on the side in contact with the adhesive layer 2 may be subjected to corona treatment or plasma treatment for the purpose of improving adhesion with the adhesive layer 2, which will be described later. In addition, the surface of the base film 1 opposite to the side in contact with the adhesive layer 2 is attached to the corrugation roll for the purpose of stabilizing the winding of the base film 1 during film formation and preventing blocking after film formation. Embossing treatment, etc. may be performed.

(Adhesive layer)

The adhesive layer 2 containing the active energy ray-curable adhesive composition, which is the second component of the dicing tape 10 of the present invention, will be described below.

As described above, the adhesive layer 2 includes an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, a photopolymerization initiator, and a polyisocyanate-based crosslinking agent that crosslinks with the hydroxyl group. It is made by containing a pre-curable adhesive composition. In the active energy ray-curable adhesive composition, 2.4 parts by mass or more and 7.0 parts by mass of a polyisocyanate-based crosslinking agent is added to 100 parts by mass of an acrylic adhesive polymer having a hydroxyl value in the range of 12.0 mgKOH/g or more and 40.5 mgKOH/g or less. Included in the following range, the equivalence ratio (-NCO/-OH) between the isocyanate group (-NCO) of the polyisocyanate-based crosslinking agent and the hydroxyl group (-OH) of the acrylic adhesive polymer is adjusted within the range of 0.14 to 1.32. It is becoming. And, the adhesive layer 2 of the dicing tape 10 has an adhesive strength of A and 0.25 after irradiation with ultraviolet rays under aerobic radiation to a stainless steel plate (SUS304·BA plate) in the range of 3.50 N/25 mm or less at 23°C. It has adhesive strength B after irradiation with ultraviolet rays under oxygen-free conditions to stainless steel plates (SUS304·BA plates) in the range of N/25 mm to 0.70 N/25 mm.

[Acrylic adhesive polymer]

The acrylic adhesive polymer contained as a main component in the active energy ray curable adhesive composition is an acrylic adhesive polymer having an active energy ray reactive carbon-carbon double bond and a hydroxyl group, and has a hydroxyl value in the range of 12.0 mgKOH/g to 40.5 mgKOH/g. has The acrylic adhesive polymer preferably occupies a proportion of 90% by mass or more and 100% by mass or less, and more preferably 95% by mass or more and 100% by mass or less, with respect to the total mass of the active energy ray-curable adhesive composition. .

The acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group is described in detail later, but is usually made by copolymerizing an alkyl (meth)acrylic acid monomer and a hydroxyl group-containing monomer as a base polymer to form a copolymer (an acrylic-based polymer having a hydroxyl group). It is obtained by obtaining an adhesive polymer) and subjecting the hydroxyl group of the copolymer to an addition reaction with a compound (active energy ray reactive compound) having an isocyanate group capable of addition reaction and a carbon-carbon double bond.

As described above, the main chain (main skeleton) of the acrylic adhesive polymer having a hydroxyl group is composed of a copolymer containing at least an alkyl (meth)acrylic acid ester monomer and a hydroxyl group-containing monomer as a copolymer component. The glass transition temperature (Tg) of the main chain of the acrylic adhesive polymer having the hydroxyl group is not particularly limited, but is preferably in the range of -65°C to -45°C. Here, the glass transition temperature (Tg) is a theoretical value calculated from Fox's equation represented by the following general formula (1) based on the composition of the monomer component constituting the acrylic adhesive polymer.

1/Tg=W ₁ /Tg ₁ +W ₂ /Tg ₂ +···+W _n /Tg _n General formula (1)

[In the general formula (1), Tg is the glass transition temperature (unit: K) of the acrylic adhesive polymer, and Tg _i (i=1, 2, … n) is the glass when monomer i forms a homopolymer. It is the transition temperature (unit: K), and W _i (i = 1, 2, ... n) represents the mass fraction of monomer i in all monomer components.]

The glass transition temperature (Tg) of homopolymers can be found, for example, in “Polymer Handbook” (edited by J. Brandrup and E. H. I mmergut, Interscience Publishers).

When the glass transition temperature (Tg) of the main chain of the acrylic adhesive polymer (copolymer) having a hydroxyl group is less than -65°C, especially when the amount of the crosslinking agent described later is small, the adhesive containing the copolymers When the layer 2 softens excessively and cool expands, the cut die bond film partially peels off from the adhesive layer 2 of the dicing tape 10 at its edge portion (part around all directions). There is a risk that the desired state will not be formed. In addition, in the pickup process after ultraviolet irradiation, there is a risk that the semiconductor chip with the die bond film may become difficult to peel from the adhesive layer 2, or adhesive residue (contamination) may occur on the surface of the die bond film 3. As a result, the yield of quality products of semiconductor chips with die bond films decreases.

On the other hand, when the glass transition temperature (Tg) exceeds -45°C, especially when the amount of the crosslinking agent described later is large, the adhesive layer 2 containing them becomes excessively hard, making it difficult for the die bond film 3. Since the wettability and followability deteriorate, and the initial adhesion to the die bond film 3 deteriorates, the die bond film 3 peels excessively from the adhesive layer 2 in the cool expand process, causing the die bond film ( 3) Sufficient external stress cannot be applied through the adhesive layer 2, so there is a risk that the die bond film 3 cannot be cut cleanly, the kerf width cannot be sufficiently secured, or the kerf width may become uneven. There are concerns. As a result, the pickup yield of the semiconductor chip with the die bond film decreases. The glass transition temperature (Tg) is preferably in the range of -63°C to -51°C, more preferably in the range of -61°C to -54°C. In this way, the glass transition temperature (Tg) is preferably -65°C or higher, more preferably -63°C or higher, and especially preferably -61°C or higher. Moreover, the glass transition temperature (Tg) is preferably -45°C or lower, more preferably -51°C or lower, and particularly preferably -54°C or lower.

Examples of the (meth)acrylic acid alkyl ester monomer include hexyl (meth)acrylate, n-octyl (meth)acrylate, isooctyl (meth)acrylate, and 2-ethylhexyl (meth)acrylate having 6 to 18 carbon atoms. Acrylate, nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tri. Decyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, heptadecyl (meth)acrylate, octadecyl (meth)acrylate, or carbon number 5 The following monomers include pentyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, ethyl (meth)acrylate, and methyl (meth)acrylate. Among these, it is preferable to use 2-ethylhexyl acrylate, and it contains in the range of 40% by mass to 85% by mass based on the total amount of monomer components constituting the main chain of the acrylic adhesive polymer (copolymer) having the hydroxyl group. It is desirable.

In addition, examples of hydroxyl group-containing monomers include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and 6-hydroxyhexyl ( Meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (4-hydroxymethylcyclohexyl)methyl ( Meta)acrylate, etc. can be mentioned. The purpose of copolymerizing the hydroxyl monomer is, first, to create an addition reaction point (-OH) for introducing an active energy ray-reactive carbon-carbon double bond, which will be described later, into the acrylic adhesive polymer by addition reaction. By reacting the hydroxyl group with the isocyanate group (-NCO) of the polyisocyanate crosslinking agent described later, the acrylic adhesive polymer has a high molecular weight, and serves as a crosslinking reaction point for imparting cohesion and appropriate hardness to the adhesive layer 2 before irradiation with active energy rays. For this reason, when an active energy ray-reactive carbon-carbon double bond is introduced by addition reaction using a hydroxyl group of an acrylic adhesive polymer, the content of the hydroxyl group monomer is, as a standard, the total amount of copolymer monomer components. For example, it is desirable to adjust it to a range of 16.4 mass% or more and 34.4 mass% or less. That is, adjusting the content of the hydroxyl group monomer in the copolymer within the above range is due to the hydroxyl value of the acrylic adhesive polymer, which is a structural requirement for the pressure-sensitive adhesive composition of the present invention, and the isocyanate group of the polyisocyanate-based crosslinking agent described later ( It is preferable because it becomes easy to control the equivalence ratio (-NCO/-OH) between -NCO) and the hydroxyl group (-OH) of the acrylic adhesive polymer to the predetermined range described above.

The acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group contains an isocyanate group and carbon that can undergo an addition reaction with the hydroxyl group contained in the side chain of the copolymer after copolymerization of the acrylic adhesive polymer having a hydroxyl group. - Obtaining a compound having a carbon double bond (active energy ray-reactive compound) by addition reaction is most preferable from the viewpoint of ease of tracking the reaction (stability of control) and technical difficulty. Examples of compounds (active energy ray reactive compounds) having such an isocyanate group and a carbon-carbon double bond include isocyanate compounds having a (meth)acryloyloxy group. Specifically, 2-methacryloyloxyethyl isocyanate, 4-methacryloyloxy-n-butyl isocyanate, 2-acryloyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, etc. can be mentioned.

In the above addition reaction, it is preferably carried out in the presence of an organometallic catalyst so that the reaction is promoted. As such an organometallic catalyst, it is preferable to use at least one selected from the group consisting of organic compounds containing zirconium, organic compounds containing titanium, and organic compounds containing tin. The amount of the organometallic catalyst is not particularly limited, but is usually preferably in the range of 0.01 parts by mass to 5 parts by mass with respect to 100 parts by mass of the acrylic adhesive polymer.

In addition, in the above addition reaction, it is preferable to use a polymerization inhibitor so that the active energy ray reactivity of the carbon-carbon double bond is maintained. As such a polymerization inhibitor, quinone-based polymerization inhibitors such as hydroquinone and monomethyl ether are preferable. The amount of the polymerization inhibitor is not particularly limited, but is usually preferably in the range of 0.01 parts by mass or more and 0.1 parts by mass or less with respect to 100 parts by mass of the acrylic adhesive polymer.

When performing the addition reaction, the acrylic adhesive polymer is crosslinked with a polyisocyanate-based crosslinking agent added later to further increase the molecular weight, and to provide cohesion and appropriate hardness to the adhesive layer 2 before active energy ray irradiation. While it is necessary to ensure that a desired amount of hydroxyl groups remain in the adhesive composition, it is also necessary to control the concentration of active energy ray-reactive carbon-carbon double bonds within a desired range. It is necessary to take these two viewpoints into consideration. For example, when reacting an isocyanate compound having a (meth)acryloyloxy group with a copolymer having a hydroxyl group in the side chain, as a standard, the (meth) ) The isocyanate compound having an acryloyloxy group is preferably added to the hydroxyl group-containing monomer of the acrylic adhesive polymer in an amount ranging from 37 mol% to 84 mol%.

In the acrylic adhesive polymer, in addition to the (meth)acrylic acid alkyl ester monomer and the hydroxyl group-containing monomer, other copolymerization monomer components may be copolymerized as needed for the purpose of adjusting adhesive strength and glass transition temperature (Tg). Examples of such other copolymerization monomer components include carboxyl group-containing monomers such as (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and isocrotonic acid, and acid anhydride group-containing monomers such as maleic anhydride and itaconic anhydride. Monomer, (meth)acrylamide, N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, N-methylol(meth)acrylamide, N-methylolpropane(meth)acrylamide, N -Amide monomers such as methoxymethyl (meth)acrylamide, N-butoxymethyl (meth)acrylamide, aminoethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, (meth)acrylic acid t -Monomers having a functional group, such as amino group-containing monomers such as butylaminoethyl, and glycidyl group-containing monomers such as glycidyl (meth)acrylate. The content of the monomer having such a functional group is not particularly limited, but is preferably in the range of 0.5% by mass to 30% by mass with respect to the total amount of copolymerization monomer components.

When a monomer having a functional group other than a hydroxyl group is copolymerized, an active energy ray-reactive carbon-carbon double bond can be introduced into the acrylic adhesive polymer using the functional group. For example, when the acrylic adhesive polymer has a carboxyl group in the side chain, a method of reacting it with an active energy ray-reactive compound such as glycidyl (meth)acrylate or 2-(1-aziridinyl)ethyl (meth)acrylate, When the acrylic adhesive polymer has a glycidyl group in the side chain, an active energy ray reactive carbon-carbon double bond may be introduced into the acrylic adhesive polymer by reacting it with an active energy ray reactive compound such as (meth)acrylic acid. there is. However, when copolymerizing a monomer having a functional group other than a hydroxyl group and using the functional group to introduce an active energy ray-reactive carbon-carbon double bond into an acrylic adhesive polymer, as a standard, the content of the hydroxyl monomer copolymerized simultaneously is , it is preferable to adjust it to, for example, a range of 2.5% by mass or more and 8.4% by mass or less, relative to the total amount of copolymer monomer components. By doing so, the hydroxyl group of the acrylic adhesive polymer has an equivalent ratio (-NCO/-OH) of the isocyanate group (-NCO) of the polyisocyanate-based crosslinking agent described later and the hydroxyl group (-OH) of the acrylic adhesive polymer to the predetermined value described above. This is preferable because it becomes easier to control within the range.

Additionally, the acrylic adhesive polymer having the above-mentioned functional group may contain other copolymerization monomer components as necessary for the purpose of cohesion, heat resistance, etc., within a range that does not impair the effects of the present invention. Specific examples of such other copolymerization monomer components include cyano group-containing monomers such as (meth)acrylonitrile, olefinic monomers such as ethylene, propylene, isoprene, butadiene, and isobutylene, styrene, and α- Styrene-based monomers such as methyl styrene and vinyl toluene, vinyl ester-based monomers such as vinyl acetate and vinyl propionate, vinyl ether-based monomers such as methyl vinyl ether and ethyl vinyl ether, halogen atom-containing monomers such as vinyl chloride and vinylidene chloride, Alkoxy group-containing monomers such as methoxyethyl (meth)acrylate and ethoxyethyl (meth)acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone , N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N- Monomers having a nitrogen atom-containing ring such as (meth)acryloylmorpholine can be mentioned. These other copolymerization monomer components may be used individually, or may be used in combination of two or more types.

In this embodiment, preferred copolymers having a hydroxyl group obtained by copolymerizing the above-mentioned monomers include, specifically, a binary copolymer of 2-ethylhexyl acrylate and 2-hydroxyethyl acrylate, and 2-ethylhexyl acrylate. Terpolymer of 2-hydroxyethyl acrylate and methacrylic acid, terpolymer of 2-ethylhexyl acrylate, n-butyl acrylate and 2-hydroxyethyl acrylate, 2-ethylhexyl acrylate and methyl methacrylate. and terpolymer of 2-hydroxyethyl acrylate, quaternary copolymer of 2-ethylhexyl acrylate, n-butyl acrylate, 2-hydroxyethyl acrylate, and methacrylic acid, 2-ethylhexyl acrylate and methacrylic acid. Quaternary copolymers of methyl, 2-hydroxyethyl acrylate, and methacrylic acid may be mentioned, but are not particularly limited to these. And, for these preferred copolymers, an isocyanate compound having a (meth)acryloyloxy group is added to form 2-methacryloyloxyethyl isocyanate to form an acrylic adhesive having an active energy ray reactive carbon-carbon double bond and a hydroxyl group. It is preferable to use polymer.

The acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group obtained in this way has a hydroxyl value in the range of 12.0 mgKOH/g to 40.5 mgKOH/g. When the hydroxyl value is less than 12.0 mgKOH/g, if the hydroxyl value is excessively small, the crosslinking after addition of the polyisocyanate-based crosslinking agent becomes insufficient, and the cohesive force of the adhesive layer 2 before irradiation with active energy rays becomes insufficient, so pickup There is a risk that glue may remain on the die bond film 3 during processing, or glue may remain on the ring frame when the dicing tape 10 is peeled from the SUS ring frame after completion of a series of processes. In addition, since it is impossible to provide appropriate hardness to the adhesive layer 2 before irradiation with active energy rays, when cool expanded, a dicing tape ( There is a risk that a state partially peeled from the adhesive layer 2 of 10) may not be formed. As a result, the effect of improving pickup performance is not seen compared to the prior art, or the pickup performance deteriorates.

On the other hand, when the hydroxyl value exceeds 40.5 mgKOH/g, especially when the addition amount of the polyisocyanate-based crosslinking agent is small, the residual hydroxyl group concentration after the crosslinking reaction in the active energy ray-curable adhesive composition becomes excessively large, resulting in adhesive layer (2 There is a risk that the initial adhesion of ) to the die bond film 3 may become greater than necessary. In this case, there is a concern that a state partially peeled from the adhesive layer 2 of the dicing tape 10 may not be formed at the edge portion (portion around all directions) of the cut die bond film when cool expanded. In addition, in the pickup process after irradiation with active energy rays, in the close contact portion where peeling of the adhesive layer 2 and the die bond film 3 does not occur due to the expansion in the previous process, die bonding occurs. There is a risk that it may become difficult for the semiconductor chip with the film to be peeled off from the adhesive layer 2. As a result, the pickup yield of the semiconductor chip with the die bond film decreases. The hydroxyl value is preferably in the range of 12.5 mgKOH/g to 40.1 mgKOH/g, more preferably in the range of 12.7 mgKOH/g to 30.1 mgKOH/g. In this way, the hydroxyl value is preferably 12.0 mgKOH/g or more, more preferably 12.5 mgKOH/g or more, and especially preferably 12.7 mgKOH/g or more. Moreover, the hydroxyl value is preferably 40.5 mgKOH/g or less, more preferably 40.1 mgKOH/g or less, and especially preferably 30.1 mgKOH/g or less.

When the hydroxyl value is in the range of 12.0 mgKOH/g or more and 40.5 mgKOH/g or less, by combining with the addition of a specific amount of a polyisocyanate-based crosslinking agent described later, the adhesive layer 2 is provided with cohesive force and appropriate hardness and polarity. Since it can be provided, the initial adhesion of the adhesive layer 2 to the die bond film 3 is appropriately maintained, while preventing the effect of reducing the adhesive force of the adhesive layer 2 due to irradiation of active energy rays to the adhesive layer. Therefore, in the cool expand process, an appropriate state of peeling from the adhesive layer 2 can be formed with respect to the edge portion of the cut die bond film 3.

In addition, the acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group is not particularly limited, but the acid value is preferably in the range of 0 mgKOH/g or more and 9.0 mgKOH/g or less. If the acid value is within the above range, the initial adhesion of the adhesive layer 2 to the die bond film 3 is appropriately maintained, and the effect of reducing the adhesive force of the adhesive layer 2 due to irradiation of active energy rays is not hindered. , in the cool expand process, it becomes easy to form an appropriate state of peeling from the adhesive layer 2 with respect to the edge portion of the cut die bond film 3. The acid value is more preferably in the range of 2.0 mgKOH/g to 8.2 mgKOH/g, and more preferably in the range of 2.5 mgKOH/g to 5.6 mgKOH/g. Likewise, the acid value is preferably 0 mgKOH/g or more, more preferably 2.0 mgKOH/g or more, and particularly preferably 2.5 mgKOH/g or more. Moreover, the acid value is preferably 9.0 mgKOH/g or less, more preferably 8.2 mgKOH/g or less, and especially preferably 5.6 mgKOH/g or less.

In addition, the acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group preferably has a weight average molecular weight Mw in the range of 200,000 to 2 million. Here, the weight average molecular weight Mw means the standard polystyrene conversion value measured by gel permeation chromatography. If the weight average molecular weight Mw of the acrylic adhesive polymer is less than 200,000, it is difficult to obtain a solution of the active energy ray-curable acrylic adhesive composition with a high viscosity of several thousand cP to tens of thousands of cP, taking into account coatability, etc., and is not preferable. In addition, the cohesive force of the adhesive layer 2 before irradiation with active energy rays becomes small, and when the semiconductor chip with the die bond film 3 is removed from the adhesive layer 2 after irradiation with active energy rays, the semiconductor wafer with the die bond film There is a risk of contamination of the die bond film surface. Additionally, when the dicing tape 10 is peeled from the SUS ring frame after completion of a series of processes, there is a risk that glue may remain on the ring frame.

On the other hand, when the weight average molecular weight Mw exceeds 2 million, it is difficult to mass-produce the active energy ray-curable acrylic adhesive polymer. For example, the active energy ray-curable acrylic adhesive polymer may gel during synthesis. , is not desirable. In addition, if the amount of polyisocyanate-based crosslinking agent added is large, the wettability and followability of the adhesive layer 2 before irradiation with active energy rays to the die bond film 3 decreases, and the initial adhesion decreases, so in the cool expand process. , the die bond film 3 peels off excessively from the adhesive layer 2, and sufficient external stress cannot be applied to the die bond film 3 through the adhesive layer 2, resulting in the die bond film 3 There are concerns that it may not be possible to cut cleanly, that sufficient cuff width may not be secured, or that the cuff width may become uneven. As a result, the pickup yield of the semiconductor chip with the die bond film decreases. The weight average molecular weight Mw is preferably in the range of 300,000 to 1 million.

[Cross-linking agent]

The active energy ray-curable adhesive composition of the present embodiment is obtained by increasing the molecular weight of the acrylic adhesive polymer having the above-described active energy ray-reactive carbon-carbon double bond and hydroxyl group by crosslinking, and forming the adhesive layer (2) before irradiation with active energy rays. It additionally contains a polyisocyanate-based crosslinking agent to provide cohesion and appropriate hardness. Examples of the polyisocyanate-based crosslinking agent include a polyisocyanate compound having an isocyanurate ring, an adduct polyisocyanate compound obtained by reacting trimethylolpropane and hexamethylene diisocyanate, and a polyisocyanate compound obtained by reacting trimethylolpropane and tolylene diisocyanate. A duct polyisocyanate compound, an adduct polyisocyanate compound obtained by reacting trimethylolpropane and xylylene diisocyanate, and an adduct polyisocyanate compound obtained by reacting trimethylolpropane and isophorone diisocyanate can be mentioned. These can be used one type or in combination of two or more types. Among these, from the viewpoint of versatility, adduct polyisocyanate compounds obtained by reacting trimethylolpropane and tolylene diisocyanate or adduct polyisocyanate compounds obtained by reacting trimethylolpropane and hexamethylene diisocyanate are suitably used.

Examples of the adduct polyisocyanate compound obtained by reacting trimethylolpropane and tolylene diisocyanate include Coronate L-45E, Coronate L-55E, and Coronate L (all brand names) manufactured by Tosoh Corporation and Takenate D101E (trade names) manufactured by Mitsui Chemicals Corporation. You can also use commercial products such as (brand name). Additionally, as an adduct polyisocyanate compound obtained by reacting trimethylolpropane and hexamethylene diisocyanate, commercial products such as Coronate HL (trade name) manufactured by Tosoh Corporation or Takenate D160N (brand name) manufactured by Mitsui Chemicals Corporation can also be used.

The polyisocyanate-based crosslinking agent is 2.4 parts by mass with respect to 100 parts by mass of the acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group whose hydroxyl value is in the range of 12.0 mgKOH/g to 40.5 mgKOH/g. It is included in the range of 7.0 parts by mass or more, and the equivalence ratio (-NCO/-OH) between the isocyanate group (-NCO) of the polyisocyanate-based crosslinking agent and the hydroxyl group (-OH) of the acrylic adhesive polymer is 0.14 or more and 1.32. It is adjusted to be in the following range.

When the above equivalence ratio (-NCO/-OH) is less than 0.14, especially when the hydroxyl value of the acrylic adhesive polymer is small, appropriate hardness cannot be provided to the adhesive layer 2 before active energy ray irradiation, so when cool expanded. , in the cut die-bond film, there is a risk that a state partially peeled from the adhesive layer 2 of the dicing tape 10 may not be formed at the edge portion (peripheral portion on all sides). As a result, the effect of improving pickup performance is not seen compared to the prior art, or the pickup performance deteriorates.

In addition, especially when the hydroxyl value of the acrylic adhesive polymer is high, when cool expanded, a portion of the cut die bond film is partially removed from the adhesive layer 2 of the dicing tape 10 at the edge portion (portion around all directions). In addition to the risk that a peeled state may not be formed, the residual hydroxyl group concentration after the crosslinking reaction in the active energy ray-curable adhesive composition becomes excessively large, and the initial adhesion of the adhesive layer 2 to the die bond film 3 is reduced. There is a risk that this will grow beyond what is necessary. As a result, in the pickup process after irradiation with active energy rays, in the close contact portion where peeling of the adhesive layer 2 and the die bond film 3 did not occur due to the expansion in the previous process, the semiconductor chip with the die bond film was formed. It becomes difficult to peel from the adhesive layer 2, and the pickup yield of the semiconductor chip with the die bond film decreases.

On the other hand, when the equivalence ratio (-NCO/-OH) exceeds 1.32, the adhesive layer 2 before irradiation with active energy rays becomes excessively hard, so that the die bond film of the adhesive layer 2 before irradiation with active energy rays ( Since the wettability and followability to 3) are lowered and the initial adhesion is lowered, the die bond film 3 is excessively peeled from the adhesive layer 2 in the cool expand process, causing the die bond film 3 to peel off. Since sufficient external stress cannot be applied through the adhesive layer (2), there is a risk that the die bond film (3) cannot be cut cleanly, a sufficient kerf width cannot be secured, or the kerf width may become uneven. there is. In addition, as the rigidity of the adhesive layer 2 increases, the bending elastic modulus of the dicing tape 10 increases, and in the pick-up process, even if the dicing tape 10 is pushed up by a lifting jig, the dicing tape 10 remains. Since the curvature is small, there is a risk that peeling from the adhesive layer 2 at the four ends of the semiconductor chip with the die bond film may be difficult to promote. As a result, the pickup yield of the semiconductor chip with the die bond film decreases. In addition, the adhesive force of the adhesive layer 2 to the SUS ring frame is insufficient, and the dicing tape 10 peels off from the SUS ring frame during expansion of the dicing tape 10, causing the expand. There is a risk that the process may not be carried out normally.

In this way, the adhesive layer 2 containing the active energy ray-curable adhesive composition in which the addition amount of the polyisocyanate-based crosslinking agent and the equivalence ratio (-NCO/-OH) are adjusted is die in a low temperature environment during cool expand. Hardness capable of transmitting an appropriate impact to the interface between the edge portion of the die bond film and the adhesive layer 2 immediately below it at the moment the bond film 3 is cut, and the stress in the direction away from the die bond film 3. In addition to having a cohesive force capable of delivering , it can have an appropriate initial adhesion to the die bond film 3. Therefore, by subjecting the dicing tape 10, in which the adhesive layer 2 is laminated to the above-described base film 1, to the cool expand process, the die bond film 3 can be cut cleanly. , in the cut die-bond film, a state partially peeled from the adhesive layer 2 of the dicing tape 10 can be appropriately and intentionally formed at the edge portion (peripheral portion on all sides). The equivalence ratio (-NCO/-OH) is preferably in the range of 0.30 or more and 0.90 or less.

Here, the equivalent ratio (NCO/OH) between the isocyanate group (NCO) of the polyisocyanate-based crosslinking agent and the hydroxyl group (OH) of the acrylic adhesive polymer (NCO/OH) is the content of the polyisocyanate-based crosslinking agent in the active energy ray-curable adhesive composition. The total number of moles of isocyanate groups obtained by calculation from the average number of isocyanate groups per molecule of the polyisocyanate crosslinking agent is calculated as the total number of moles of hydroxyl groups in the acrylic adhesive polymer after the introduction of the active energy ray-reactive carbon-carbon double bond. This is the theoretical calculated value divided by The total number of moles of the hydroxyl group can be determined, for example, by using an isocyanate compound having a (meth)acryloyloxy group to introduce an active energy ray-reactive carbon-carbon double bond into an acrylic adhesive polymer having a hydroxyl group as the base polymer. In the case of addition reaction, the number of moles of hydroxyl groups theoretically consumed by the crosslinking reaction of the isocyanate group of the isocyanate compound having the added (meth)acryloyloxy group is calculated from the total number of moles of hydroxyl groups in the acrylic adhesive polymer as the base polymer (= It is a value obtained by subtracting the number of moles of the isocyanate group of the isocyanate compound having a (meth)acryloyloxy group.

In addition, in the active energy ray-curable adhesive composition in which the addition amount of the polyisocyanate-based crosslinking agent and the above-mentioned equivalent ratio (-NCO/-OH) are adjusted to the above-mentioned range, the amount after the crosslinking reaction per 1 g of the active energy ray-curable adhesive composition The remaining hydroxyl group concentration is preferably in the range of 0 mmol or more and 0.60 mmol or less. More preferably, it is in the range of 0.02 mmol or more and 0.40 mmol or less. In this way, the residual hydroxyl group concentration is preferably 0 mmol or more, and more preferably 0.02 mmol or more. Additionally, the remaining hydroxyl group concentration is preferably 0.60 mmol or less, and more preferably 0.40 mmol or less. Here, the remaining hydroxyl group concentration after the crosslinking reaction per 1 g of the active energy ray-curable adhesive composition is calculated from the total number of moles of hydroxyl groups possessed by the acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, and the added polyisocyanate type. The value obtained by subtracting the number of moles of hydroxyl groups (=number of moles of isocyanate groups of the crosslinking agent) theoretically consumed by the crosslinking reaction with the isocyanate group of the crosslinking agent is converted to per gram of the active energy ray curable adhesive composition.

If the residual hydroxyl group concentration after the crosslinking reaction per 1 g of the active energy ray-curable adhesive composition is within the above range, the initial adhesion of the adhesive layer 2 to the die bond film 3 and the adhesive power to the ring frame made of SUS can be done appropriately. Therefore, by subjecting the dicing tape 10, in which the adhesive layer 2 is laminated to the above-described base film 1, to a cool expand process, in the cut die bond film, the edge portion (around all directions) is It becomes easy to appropriately and intentionally form a state in which the dicing tape 10 is partially peeled off from the adhesive layer 2 of the dicing tape 10.

After forming the adhesive layer 2 with the active energy ray-curable adhesive composition, the aging conditions for reacting the polyisocyanate-based crosslinking agent with the acrylic adhesive polymer having a hydroxyl group are not particularly limited, but include, for example: , the temperature can be set appropriately within the range of 23℃ to 80℃, and the time can be appropriately set within the range of 24 hours to 168 hours.

[Photopolymerization initiator]

The active energy ray-curable adhesive composition of this embodiment contains a photopolymerization initiator that generates radicals by irradiation of active energy rays. The photopolymerization initiator receives irradiation of active energy rays to the active energy ray-curable acrylic adhesive composition, generates radicals, and initiates a crosslinking reaction of the carbon-carbon double bond of the active energy ray-curable acrylic adhesive polymer.

The photopolymerization initiator is not particularly limited, and conventionally known ones can be used. Specifically, for example, an alkylphenone-based photopolymerization initiator, an acylphosphine oxide-based photopolymerization initiator, an oxime ester-based photopolymerization initiator, etc. can be used. Examples of the alkylphenone-based photopolymerization initiator include α-hydroxyalkylphenone-based radical polymerization initiator, α-hydroxyacetophenone-based radical polymerization initiator, α-aminoalkylphenone-based radical polymerization initiator, and benzylmethylketal-based radical polymerization initiator. there is.

The photopolymerization initiator may be used alone or in combination of two or more types as long as it exhibits the effect of the present invention. However, in the active energy ray-curable adhesive composition of the present embodiment, among these photopolymerization initiators, after irradiation with ultraviolet rays under aerobic acid, From the viewpoint of effectively reducing both the adhesive force A and the adhesive force B after irradiation with ultraviolet rays under oxygen-free conditions, the photopolymerization initiator is an alkylphenone-based photopolymerization initiator other than the α-aminoalkylphenone-based photopolymerization initiator (a) and the α-aminoalkylphenone-based photopolymerization initiator. It is preferable to include at least three types of photopolymerization initiators among (b) and acylphosphine oxide photopolymerization initiators (c).

In addition, in the present invention, “adhesive strength A after irradiation with ultraviolet rays under aerobic oxygen” refers to the activation energy in a state in which the release liner of the dicing tape 10 is peeled off and the adhesive layer 2 side is exposed to the air (under aerobic oxygen). This refers to the adhesive force measured when irradiating ultraviolet rays as a line directly to the surface of the adhesive layer (2) and then attaching it to an adherend (SUS304·BA board). This means that when picking up a semiconductor chip with a die-bond film, the “part where the die-bond film 3 was torn during expansion” in the adhesive layer 2 is exposed to the air and exposed to ultraviolet rays. Since it is irradiated, the dicing tape (10) for the die bond film (3) when the die bond film (3) is re-adhered to the adhesive layer (2) after being irradiated with ultraviolet rays in a state exposed to the air. ) is a model that assumes the adhesive force, and indicates the ease of peeling of the re-adhesive portion in the pickup process. The smaller the value of the adhesive force, the weaker the re-adhesion force, and the easier it is to peel the semiconductor chip with the die bond film from the adhesive layer 2 of the dicing tape 10.

In addition, “adhesive strength B after irradiation with ultraviolet rays under oxygen-free conditions” refers to peeling off the release liner of the dicing tape 10 and attaching the side of the adhesive layer 2 to an adherend (SUS304·BA board) to form the adhesive layer 2. This refers to the adhesive force measured after irradiating ultraviolet rays as active energy rays to the adhesive layer 2 beyond the base film 1 of the dicing tape 10 in a state not exposed to air (under oxygen-free conditions). This means that when picking up a semiconductor chip with a die-bond film, the “part where the die-bond film 3 that was cut during expansion was in close contact without peeling” in the adhesive layer 2 is not exposed to the air. Since ultraviolet rays are irradiated in an exposed state, the adhesive force of the dicing tape 10 to the die bond film 3 when the adhesive layer 2 is irradiated with ultraviolet rays in a state in which it is not exposed to the air is modeled. This is assumed as a practical example, and indicates the ease of peeling off parts that were in close contact other than the re-adhered part in the pickup process. The smaller the value of the adhesive force, the easier it is to peel the semiconductor chip with the die bond film from the adhesive layer 2 of the dicing tape 10. Details of the method for measuring these adhesive forces will be described later.

Specifically, the α-aminoalkylphenone-based photopolymerization initiator (a) includes, for example, 2-methyl-1-(4-methylthiophenyl)-2-morpholinopropan-1-one (trade name: Omnirad) 907, manufactured by IGM Resins B.V.) or 2-benzylmethyl 2-dimethylamino-1-(4-morpholinophenyl)-1-butanone (trade name: Omnirad 369, manufactured by IGM Resins B.V.), 2-dimethylamino-2 -(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one (brand name: Omnirad 379EG, manufactured by IGM Resins B.V.), etc. These may be used individually or in combination of two or more types.

Among these, as the α-aminoalkylphenone photopolymerization initiator (a), 2-benzylmethyl 2-dimethylamino-1-(4-morpholinophenyl)-1-butanone or 2-dimethylamino-2-( 4-Methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one is preferably used.

The α-aminoalkylphenone-based photopolymerization initiator (a) is particularly effective in reducing the adhesive force A of the adhesive layer 2 after irradiation with ultraviolet rays under aerobic conditions. However, on the other hand, the adhesive strength B of the pressure-sensitive adhesive layer 2 after irradiation with ultraviolet rays under oxygen-free conditions tends to increase inversely with an increase in the content of the photopolymerization initiator (a), and therefore, the adhesive strength B after irradiation with ultraviolet rays without oxygen, as described later, decreases. It is preferable to use it in combination with an alkylphenone-based photopolymerization initiator (b) other than the α-aminoalkylphenone-based photopolymerization initiator and an acylphosphine oxide-based photopolymerization initiator (c), and the content of the photopolymerization initiator (a) is also described later. It is desirable to limit it to a range.

As the alkylphenone-based photopolymerization initiator (b) other than the α-aminoalkylphenone-based photopolymerization initiator, as described above, an α-hydroxyalkylphenone-based radical polymerization initiator, an α-hydroxyacetophenone-based radical polymerization initiator, and benzyl. and methyl ketal-based radical polymerization initiators. These may be used individually or in combination of two or more types.

Specific examples of the α-hydroxyalkylphenone photopolymerization initiator include 1-hydroxycyclohexylphenyl ketone (brand name: Omnirad 184, manufactured by IGM Resins B.V.).

As an α-hydroxyacetophenone photopolymerization initiator, specifically, for example, 2-hydroxy-2-methyl-1-phenylpropan-1-one (trade name: Omnirad 1173, manufactured by IGM Resins B.V.), 1- [4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one (trade name: Omnirad 2959, manufactured by IGM Resins B.V.), 2-hydroxy-1-{ 4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one (brand name: Omnirad 127, manufactured by IGM Resins B.V.), etc.

Specific examples of the benzylmethylketal-based photopolymerization initiator include 2,2'-dimethoxy-1,2-diphenylethan-1-one (e.g., brand name Omnirad 651, manufactured by IGM Resins B.V.), etc. can be mentioned.

Among these, alkylphenone-based photopolymerization initiators (b) other than the α-aminoalkylphenone-based photopolymerization initiator include 1-hydroxycyclohexylphenylketone, 2-hydroxy-1-{4-[4-(2-hydroxy -2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one or 2,2'-dimethoxy-1,2-diphenylethan-1-one is preferably used.

The alkylphenone-based photopolymerization initiator (b) other than the α-aminoalkylphenone-based photopolymerization initiator is particularly effective in reducing the adhesive force B of the adhesive layer 2 after irradiation with ultraviolet rays under oxygen-free conditions. In addition, with respect to the adhesive force A after aerobic ultraviolet irradiation, the reduction effect is inferior to that of the α-aminoalkylphenone-based photopolymerization initiator (a), but a certain reduction effect can be obtained depending on the content. Therefore, by using it in combination with the α-aminoalkylphenone-based photopolymerization initiator (a), it becomes easier to reduce the adhesive force B after irradiation of ultraviolet rays under anoxic conditions while additionally improving the effect of reducing the adhesive force after irradiation of ultraviolet rays under aerobic conditions.

As the acylphosphine oxide photopolymerization initiator (c), specifically, for example, 2,4,6-trimethylbenzoyl-diphenylphosphine oxide (trade name Omnirad TPO, manufactured by IGM Resins B.V.), bis(2, 4,6-trimethylbenzoyl)-phenylphosphine oxide (product name: Omnirad 819, manufactured by IGM Resins B.V.), 2,4,6-trimethylbenzoyl-diphenylphosphine oxide (product name: Omnirad TPO, manufactured by IGM Resins B.V.), etc. I can hear it. These may be used individually or in combination of two or more types.

Among these, as the acylphosphine oxide-based photopolymerization initiator (c), bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide is preferably used.

The acylphosphine oxide-based photopolymerization initiator (c) has a fast curing speed because the absorption edge of the photopolymerization initiator extends to a wavelength of 400 nm or more, and in particular, the adhesive strength B after irradiation of ultraviolet rays under oxygen-free conditions of the adhesive layer (2) It is effective in reducing In addition, with respect to the adhesive force A after aerobic ultraviolet irradiation, the reduction effect is inferior to that of the α-aminoalkylphenone-based photopolymerization initiator (a), but a certain reduction effect can be obtained depending on the content. Therefore, by using it in combination with the α-aminoalkylphenone photopolymerization initiator (a) and an alkylphenone photopolymerization initiator (b) other than the α-aminoalkylphenone photopolymerization initiator, the effect of reducing the adhesive force A after aerobic ultraviolet irradiation is achieved. By further improving it, it becomes easier to further improve the effect of reducing the adhesive force B after irradiation with ultraviolet rays under oxygen-free conditions.

Photopolymerization of at least three types of the α-aminoalkylphenone-based photopolymerization initiator (a), an alkylphenone-based photopolymerization initiator (b) other than the α-aminoalkylphenone-based photopolymerization initiator, and an acylphosphine oxide-based photopolymerization initiator (c). Specific examples of combinations of preferred photopolymerization initiators including an initiator include:

(1) Photopolymerization initiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one/photopolymerization initiator (b) : 1-Hydroxycyclohexylphenylketone/photopolymerization initiator (c): A combination of three types of bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide,

(2) Photopolymerization initiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one/photopolymerization initiator (b) : 2-hydroxy-1-{4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one/photopolymerization initiator (c): bis(2, A combination of three types of 4,6-trimethylbenzoyl)-phenylphosphine oxide,

(3) Photopolymerization initiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one/photopolymerization initiator (b) : 1-hydroxycyclohexylphenylketone and 2,2'-dimethoxy-1,2-diphenylethan-1-one/photopolymerization initiator (c): Bis(2,4,6-trimethylbenzoyl)-phenylphos Combination of 4 types of pin oxide,

(4) Photopolymerization initiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one/photopolymerization initiator (b) : 1-hydroxycyclohexylphenylketone and 2-hydroxy1-{4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one/photopolymerization initiator (c): A combination of four types of bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide,

(5) Photopolymerization initiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one/photopolymerization initiator (b) : 2-hydroxy-1-{4-[4-2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one and 2,2'-dimethoxy-1,2 -Diphenylethan-1-one/photopolymerization initiator (c): a combination of four types of bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide,

etc. can be mentioned.

As described above, the active energy ray-curable adhesive composition of the present embodiment includes an α-aminoalkylphenone-based photopolymerization initiator (a), an alkylphenone-based photopolymerization initiator (b) other than the α-aminoalkylphenone-based photopolymerization initiator, and an acyl It is preferable to include at least three types of photopolymerization initiators among the phosphine oxide photopolymerization initiators (c). In this case, due to the synergistic effect of the functions of each photopolymerization initiator, (1) the pressure-sensitive adhesive layer is formed under oxygen-free conditions. (2) When irradiated with ultraviolet rays, the curing of the acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond contained in the adhesive composition proceeds sufficiently within a predetermined time, and (2) under aerobic conditions. Even when the adhesive layer 2 is irradiated with ultraviolet rays, the decrease in curing speed due to the influence of oxygen inhibition is significantly suppressed, thereby improving the curing of the acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond contained in the adhesive composition. It becomes easier to progress to the desired level within a certain amount of time. As a result, first, (1) when ultraviolet rays are irradiated to the adhesive surface (the surface that is closely adhered without peeling even after the expand process) of the die bond film (adhesive layer) 3 in the adhesive layer 2; , it becomes easy to provide adhesive strength B to the adhesive layer 2 after irradiation with ultraviolet rays under oxygen-free conditions in the desired range described later. Additionally, (2) the peeled portion of the cut die-bond film 3 in the adhesive layer 2 formed by the expand process, when irradiated with ultraviolet rays, is treated with the conventional dicing tape 10. As can be seen, the adhesive strength is not sufficiently reduced due to polymerization inhibition of the acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond by oxygen contained in the surrounding air, and while avoiding the adhesive strength being maintained at a high value, the adhesive For the layer (2), it becomes easy to provide adhesive force A after irradiation with ultraviolet rays under aerobic radiation in the desired range described later.

Accordingly, in the pickup process, in order to pick up the semiconductor chip with the die bond film, after irradiating ultraviolet rays to the adhesive layer 2, when the adsorption collet is brought into contact from the top of the semiconductor chip, the adhesive layer is expanded by the expansion of the previous process. The influence of the edge portion of the die-bond film of the semiconductor chip with the die-bond film partially peeled off from (2) being firmly re-adhered to the adhesive layer (2), which is insufficiently cured due to oxygen inhibition, can be greatly suppressed. That is, the re-adhesion force can be weakened to a level where it can be easily peeled off by pushing up the jig from the lower surface of the dicing tape 10, and also, the semiconductor with the adhesive layer 2 and the die bond film. Since the adhesion B can be imparted to the surface of the chip in close contact with the die-bond film without peeling after irradiation with a desirable oxygen-free ultraviolet ray, it is possible to subsequently pick up the semiconductor chip with the die-bond film from the adhesive layer 2 in a satisfactory manner. It becomes possible.

The amount of the photopolymerization initiator added (when using two or more types in combination, the total amount) is preferably in the range of 1.2 parts by mass to 12.0 parts by mass with respect to 100 parts by mass of solid content of the active energy ray-curable acrylic adhesive polymer. do. When the amount of the photopolymerization initiator added is less than 1.2 parts by mass, the photoreactivity to active energy rays is not sufficient, so the photoradical crosslinking reaction of the acrylic adhesive polymer does not sufficiently occur even when irradiated with active energy rays, and as a result, the photo-radical crosslinking reaction of the acrylic adhesive polymer does not occur sufficiently under aerobic and anoxic conditions. In either case, the effect of reducing the adhesive force in the adhesive layer 2 after irradiation with ultraviolet rays is reduced, and there is a risk that pick-up defects in the semiconductor chip may increase. On the other hand, when the added amount of the photopolymerization initiator exceeds 12.0 parts by mass, the effect is saturated, which is not preferable from the viewpoint of economic efficiency. Additionally, depending on the type of photopolymerization initiator, the adhesive force B of the adhesive layer 2 after irradiation with ultraviolet rays under oxygen-free conditions may become greater than the desired value, thereby increasing pickup defects in the semiconductor chip with the die bond film.

In an embodiment comprising three preferred types of photopolymerization initiators, an α-aminoalkylphenone photopolymerization initiator (a), an alkylphenone photopolymerization initiator other than the α-aminoalkylphenone photopolymerization initiator (b), and acylphos. Each addition amount of the pin oxide-based photopolymerization initiator (c) is 0.8 parts by mass or more and 5.0 parts by mass of the α-aminoalkylphenone-based photopolymerization initiator (a) with respect to 100 parts by mass of solid content of the active energy ray-curable acrylic adhesive polymer. In the following range, the alkylphenone-based photopolymerization initiator (b) other than the α-aminoalkylphenone-based photopolymerization initiator is in the range of 0.2 to 5.0 parts by mass, and the acylphosphine oxide-based photopolymerization initiator (c) is 0.2. It is preferable to adjust it to a range of not less than 2.0 parts by mass and not more than 2.0 parts by mass.

If the amount of the α-aminoalkylphenone-based photopolymerization initiator (a) added is less than 0.8 parts by mass, there is a risk that the adhesive force A of the adhesive layer 2 may not decrease to the desired value after irradiation with ultraviolet rays under aerobic conditions. On the other hand, if the addition amount of the α-aminoalkylphenone-based photopolymerization initiator (a) exceeds 5.0 parts by mass, there is a risk that the adhesive force B of the adhesive layer 2 after irradiation with ultraviolet rays under oxygen-free conditions may become larger than the desired value. Additionally, there is a risk that the storage stability of the dicing tape 10 may deteriorate. When the addition amount of the alkylphenone-based photopolymerization initiator (b) other than the α-aminoalkylphenone-based photopolymerization initiator is less than 0.2 parts by mass, the adhesive strength of the adhesive layer 2 does not decrease to the desired value after irradiation with ultraviolet rays under aerobic and anoxic conditions. There is a risk that it will not happen. If the addition amount of the alkylphenone-based photopolymerization initiator (b) other than the α-aminoalkylphenone-based photopolymerization initiator exceeds 5.0 parts by mass, the effect is saturated, which is not preferable from the viewpoint of economic efficiency. Additionally, there is a risk that the storage stability of the dicing tape 10 may deteriorate. If the amount of the acylphosphine oxide-based photopolymerization initiator (c) added is less than 0.2 parts by mass, there is a risk that the adhesive strength of the adhesive layer 2 may not decrease to the desired value after irradiation with ultraviolet rays under aerobic and anoxic conditions. When the addition amount of the acylphosphine oxide-based photopolymerization initiator (c) exceeds 2.0 parts by mass, the effect is saturated, which is not preferable from the viewpoint of economic efficiency. Additionally, depending on the addition amount of other photopolymerization initiators (a) and (b), there is a risk that the storage stability of the dicing tape 10 may worsen.

The respective addition amounts of the α-aminoalkylphenone-based photopolymerization initiator (a), the alkylphenone-based photopolymerization initiator (b) other than the α-aminoalkylphenone-based photopolymerization initiator, and the acylphosphine oxide-based photopolymerization initiator (c) are as set forth above. When adjusted within the range, as described above, the adhesive layer 2 can be irradiated with ultraviolet rays under either aerobic or anoxic conditions to reduce its adhesive strength to a desired level, and in the pick-up process, It becomes possible to favorably pick up the semiconductor chip with the die bond film from the adhesive layer 2.

In addition, as a sensitizer for this photopolymerization initiator, compounds such as dimethylaminoethyl methacrylate and isoamyl 4-dimethylaminobenzoate are added to the active energy ray-curable acrylic adhesive composition within a range that does not impair the effect of the present invention. You can do it.

[etc]

The active energy ray-curable adhesive composition of the present embodiment contains other active energy ray-curable compounds (e.g., polyfunctional urethane acrylate-based oligomers, etc.) as needed, within a range that does not impair the effects of the present invention. ), tackifiers, fillers, anti-aging agents, colorants, flame retardants, antistatic agents, surfactants, silane coupling agents, leveling agents, etc. may be added.

[Active energy ray reactive carbon-carbon double bond concentration]

The active energy ray curable adhesive composition of the present embodiment is not particularly limited, but is adjusted so that the active energy ray reactive carbon-carbon double bond concentration is in the range of 0.85 meq or more and 1.50 meq or less per 1 g of the active energy ray curable adhesive composition. desirable. When the concentration of active energy ray-reactive carbon-carbon double bonds per 1 g of the active energy ray-curable adhesive composition is less than 0.85 meq, and when the concentration of residual hydroxyl groups after the crosslinking reaction per 1 g of the above-mentioned active energy ray-curable adhesive composition is large, ultraviolet rays The adhesive force of the adhesive layer 2 after irradiation, especially the adhesive force A after irradiation with aerobic ultraviolet rays, is not sufficiently reduced, and there is a risk that it may become difficult to peel the semiconductor chip with the die bond film from the adhesive layer 2 in the pickup process.

On the other hand, when the active energy ray reactive carbon-carbon double bond concentration per 1 g of the active energy ray curable adhesive composition exceeds 1.50 meq, the effect is gradually saturated, which is undesirable from an economical standpoint. Additionally, depending on the copolymerization composition of the acrylic adhesive polymer, it may easily gel during polymerization or reaction during synthesis, making synthesis difficult. Additionally, when confirming the carbon-carbon double bond content of the acrylic adhesive polymer, the carbon-carbon double bond content can be calculated by measuring the iodine value of the acrylic adhesive polymer.

If the active energy ray reactive carbon-carbon double bond concentration is within the range of 0.85 meq or more and 1.50 meq or less per 1 g of the active energy ray curable adhesive composition, the adhesive layer 2 may be treated under either aerobic or anoxic conditions, as described above. By irradiating ultraviolet rays, it becomes easy to reduce the adhesive strength to a desired level, and it becomes easy to favorably pick up the semiconductor chip with the die bond film from the adhesive layer 2 in the pickup process. More preferably, the active energy ray-reactive carbon-carbon double bond concentration is in the range of 0.88 meq to 1.46 meq per gram of the active energy ray-curable adhesive composition. Likewise, the active energy ray-reactive carbon-carbon double bond concentration is preferably 0.85 meq or more, more preferably 0.88 meq or more, and preferably 1.50 meq or less, and 1.46 meq per 1 g of the active energy ray-curable adhesive composition. It is more preferable that it is below.

[Adhesion of adhesive layer]

The adhesive force A of the adhesive layer 2 of the dicing tape 10 to a stainless steel plate (SUS304·BA plate) at 23°C after irradiation with ultraviolet rays under aerobic radiation is in the range of 3.50 N/25 mm or less. Here, the adhesive force A after aerobic ultraviolet irradiation is, as described above, the edge portion of the cut die bond film (adhesive layer) 3 is peeled and the portion of the adhesive layer exposed to the air is exposed to oxygen in the surrounding air. This is the adhesive strength of the adhesive layer 2 after ultraviolet irradiation, taking into account that the effect of reducing the adhesive force by ultraviolet irradiation is not sufficiently obtained due to polymerization inhibition by ultraviolet irradiation. The smaller the adhesion A after aerobic ultraviolet irradiation, the more desirable it is. However, it is difficult to completely prevent polymerization inhibition by oxygen, and there is a limit to reducing the adhesion. Meanwhile, a series of methods for obtaining a semiconductor chip with a die bond film are required. In the process, of course, it is necessary to consider characteristics other than the adhesive force A after irradiation of ultraviolet rays under aerobic conditions to the die bond film (adhesive layer) 3 of the dicing tape 10. In the adhesive layer of the present invention, It is desirable to keep the lower limit at 1.25N/25mm. In addition, when the adhesive force A after the above-mentioned aerobic ultraviolet irradiation exceeds 3.50 N/25 mm, in the pickup process, after irradiating ultraviolet rays to the adhesive layer 2, a dicing tape ( 10) With respect to the semiconductor chip provided with the upper die bond film, when the suction collet for pickup is brought into contact and lands on the surface of the semiconductor chip from the top, the die bond that was peeled off from the adhesive layer 2 of the dicing tape 10 The edge portion of the die-bond film of the film-equipped semiconductor chip is adhered to the insufficiently cured adhesive layer 2 by pushing up the jig from the lower surface of the dicing tape 10 and by suction/lifting with the suction collet. The semiconductor chip with the die bond film is strongly re-adhered to the point where it cannot be easily peeled off from the adhesive layer 2, and even when pushed up from the lower surface of the dicing tape 10 using a push-up jig, it peels off from the edge portion. It is difficult to create a device, and pickup of a semiconductor chip equipped with a die bond film may be hindered. Additionally, if you try to force the pickup by increasing the push-up height (push-up amount) of the push-up jig, the risk of damaging the semiconductor chip increases. The adhesive force A after aerobic ultraviolet irradiation is preferably in the range of 1.30 N/25 mm to 3.00 N/25 mm, and more preferably in the range of 1.35 N/25 mm to 2.75 N/25 mm. Likewise, the adhesive force A is preferably 1.25 N/25 mm or more, more preferably 1.30 N/25 mm or more, and especially preferably 1.35 N/25 mm or more. Moreover, the adhesive force A is preferably 3.50 N/25 mm or less, more preferably 3.00 N/25 mm or less, and especially preferably 2.75 N/25 mm or less.

When the adhesive force A after aerobic ultraviolet irradiation is in the range of 3.50 N/25 mm or less, in the pick-up process, after irradiating ultraviolet rays to the adhesive layer 2, the dicing tape 10 positioned on the push-up jig A semiconductor chip with a die-bond film on the top is provided with a die-bond film that has been peeled off from the adhesive layer 2 of the dicing tape 10 when the suction collet for pickup is brought into contact and lands on the surface of the semiconductor chip from the top. The phenomenon in which the edge portion of the die bond film of the semiconductor chip is strongly re-adhered to the adhesive layer 2, which has not been sufficiently cured by ultraviolet irradiation, is greatly suppressed, that is, from the lower surface of the dicing tape 10. By pushing up the jig, the re-adhering force is weakened to a level where the semiconductor chip with the die bond film can be easily peeled off from the adhesive layer 2, and the semiconductor chip with the die bond film is pushed up from the lower surface of the dicing tape 10 using the pushing jig. When raised, it is easy to create a trigger for peeling from the edge portion, and pickup of the semiconductor chip with the die bond film is not hindered. Additionally, the risk of damage to the semiconductor chip during pickup is reduced. As a result, in the pickup process, it becomes possible to favorably pick up the semiconductor chip with the die bond film from the adhesive layer 2 after irradiation with ultraviolet rays.

As described above, in the actual pickup process, the edge portion of the die bond film of the semiconductor chip with die bond film that has been peeled from the adhesive layer 2 of the dicing tape 10 is exposed to the air. When re-adhering to the adhesive layer 2 irradiated with ultraviolet rays, it is presumed that the reason why the re-adhering force is weakened compared to before is due to the following reasons. That is, first, (1) the surface of the adhesive layer (2), whose adhesive force A has been reduced to a level of 3.50 N/25 mm or less after the aerobic ultraviolet irradiation, is cured to the desired level by ultraviolet irradiation to obtain an appropriate hardness. is being granted. The pressure-sensitive adhesive layer 2 of this embodiment is more stable to the die-bond film 3 than the pressure-sensitive adhesive layer 2 before irradiation with ultraviolet rays or the conventional pressure-sensitive adhesive layer after irradiation with ultraviolet rays, which is insufficiently cured due to polymerization inhibition by oxygen. Wetting and followability are greatly suppressed. On the other hand, (2) when actually picking up the semiconductor chip with die bond film, the edge portion of the die bond film of the semiconductor chip with die bond film that was peeled from the adhesive layer 2 of the dicing tape 10 is absorbed by the adsorption collet. The time from the time it is re-adhered to the adhesive layer 2 after ultraviolet irradiation by contact/landing on the semiconductor chip until it is pushed up from the lower surface of the dicing tape 10 by the jig is very short. Then, with respect to the surface of the adhesive layer 2 of the present embodiment in which the adhesive force A has been reduced to a level of 3.50 N/25 mm or less after the aerobic ultraviolet irradiation, the edge portion of the peeled die bond film (adhesive layer) Even if the surfaces of In other words, when re-adhering, it is possible to avoid maintaining the adhesive force between both layers at a high value as in the past.

Therefore, when the edge portion of the die bond film of the semiconductor chip with the die bond film is appropriately peeled from the adhesive layer 2 by the expand process, in conjunction with the effect of reducing the adhesive force A after irradiation with ultraviolet rays under aerobic oxygen, the cleaved Compared to the conventional pattern in which the die bond film (adhesive layer) and the adhesive layer are not separated by the expand process and are provided in a pick-up process after the two layers are first bonded together, this is the first semiconductor with a die bond film. I think that the force required to peel off the edge of the chip has decreased.

The adhesive force A after aerobic ultraviolet irradiation in the present invention is measured by the method described below. First, prepare a dicing tape (10) and a stainless steel plate (SUS304/BA plate). The dicing tape 10 is cut to a size of 25 mm in width (in the TD direction of the base film 1) and 120 mm in length (in the MD direction of the base film 1). Next, ultraviolet rays (UV) with a central wavelength of 367 nm are irradiated from the adhesive layer 2 side of the dicing tape 10 from which the release liner has been removed using a metal halide lamp (irradiation intensity: 70 mW/cm ² , integrated light amount: 150 mJ/cm ² ), then roll the dicing tape (10) onto a stainless steel plate (SUS304·BA plate) from the edge of the adhesive layer (2) using a rubber roller weighing 2 kg, at a temperature of 23°C and a humidity of 50°C. In an environment of %RH, the rubber roller is made to reciprocate once at a speed of about 5 mm/sec, and neatly pressed and bonded to form a test piece for measurement. After standing for 20 minutes, the adhesion of the test piece is measured using a peeling angle flexible type adhesion/film peeling analysis device shown in FIG. 4. First, the test piece for measurement in which the dicing tape 10 is bonded to the stainless steel plate 4 is fixed and mounted on the flat cross stage 5 for the adhesion/film peeling analysis device using a dedicated jig, and the dicing tape is The end of (10) is fixed to the load cell (7) equipped with a gripper jig (not shown). Next, in an environment of a temperature of 23° C. and a humidity of 50% RH, the rotation stage 8 on which the flat cross stage 5 is mounted by the actuator 6 is operated, as shown in FIG. 4 (a schematic diagram of the device viewed directly from above). While moving in the direction opposite to the load cell 7 (arrow V1 direction) at a stage speed V1 of 300 mm/min, the flat cross stage 5 is also moved on the rotation stage 8 at a stage speed V1 of 300 mm/min synchronized with the stage speed V1. It is moved in the direction of the peeling angle of 90° (direction of arrow V2) at the peeling speed V2. Accordingly, the dicing tape 10 can be peeled off from the stainless steel plate 4 fixed and mounted on the flat cross stage at a peeling speed of 300 mm/min while maintaining the peeling angle at 90°. The load cell 7 detects the load when the adhesive layer 2 together with the base film 1 is peeled off from the stainless steel plate 4, and the adhesive force is measured. By the above method, the adhesive force (unit: N/25 mm) of the dicing tape 10 at a peeling angle of 90° to the stainless steel plate (SUS304/BA plate) 4 is measured. The measurement is performed on three test pieces, and the average value of the values of the three samples is taken as the adhesive force A of the dicing tape 10 after irradiation with ultraviolet rays under aerobic conditions.

In addition, the adhesive force B of the adhesive layer 2 of the dicing tape 10 to a stainless steel plate (SUS304·BA plate) at 23°C after irradiation with ultraviolet rays under oxygen-free conditions is 0.25 N/25 mm or more and 0.70 N/25. The range is less than mm. Here, the adhesive force B after irradiation with ultraviolet rays under oxygen-free conditions is the bonding surface (closely adhered without peeling) between the adhesive layer 2 and the adherend (die bond film 3), not taking into account the influence of oxygen inhibition by surrounding oxygen. This is the adhesion to indicate the adhesion of cotton) after irradiation with ultraviolet rays. From the viewpoint of improving pick-up performance, the smaller the adhesion B after ultraviolet irradiation is within the above range, the more desirable it is. However, if it is less than 0.25 N/25 mm, the semiconductor chip with the die bond film is diced in the previous stage of pickup. There are cases where the tape 10 may unintentionally fall off from its fixed position on the adhesive layer 2 or cause misalignment. In addition, when the adhesive force B after irradiation with ultraviolet rays under oxygen-free conditions is greater than 0.70 N/25 mm, the die bond film 3a cannot be removed even if the dicing tape 10 is pushed up from the lower surface of the dicing tape 10 using a lifting jig in the pickup process. ), peeling of the die bond film 3a from the adhesive layer 2 toward the center following peeling of the edge portion is difficult to progress, and pickup itself may become difficult. Additionally, if you try to force the pickup by increasing the push-up height (push-up amount) of the push-up jig, there is a risk that the semiconductor chip may be damaged. The adhesive force B after irradiation with ultraviolet rays under oxygen-free conditions is preferably in the range of 0.30 N/25 mm or more and 0.65 N/25 mm or less, and more preferably in the range of 0.35 N/25 mm or more and 0.60 N/25 mm or less. Likewise, the adhesive force B is preferably 0.25 N/25 mm or more, more preferably 0.30 N/25 mm or more, and especially preferably 0.35 N/25 mm or more. Moreover, the adhesive force B is preferably 0.70 N/25 mm or less, more preferably 0.65 N/25 mm or less, and especially preferably 0.60 N/25 mm or less.

When the adhesive force B after irradiation with ultraviolet rays under oxygen-free conditions is in the range of 0.25 N/25 mm or more and 0.70 N/25 mm or less, in the pickup process, the dicing tape 10 is pushed using a push-up jig from the lower surface side. When raised, peeling of the die bond film from the adhesive layer 2 tends to progress from the outer periphery of the adhesive layer toward the center in the close contact surface between the die bond film of the semiconductor chip with the die bond film and the adhesive layer 2, Pickup performance improves. Additionally, the risk of damage to the semiconductor chip during pickup is reduced.

The adhesive force B after irradiation with ultraviolet rays under oxygen-free conditions in the present invention is measured by the method described below. First, prepare a dicing tape (10) and a stainless steel plate (SUS304/BA plate). The dicing tape 10 is cut to a size of 25 mm in width (in the TD direction of the base film 1) and 120 mm in length (in the MD direction of the base film 1). Next, a stainless steel plate (SUS304·BA plate) was applied using a rubber roller weighing 2 kg from the edge of the adhesive layer 2 surface of the dicing tape 10 from which the release liner was removed, at a temperature of 23° C. and a humidity of 50% RH. In an environment, the rubber roller is reciprocated once at a speed of about 5 mm/sec to neatly press and join. After standing for 20 minutes, ultraviolet rays (UV) with a central wavelength of 367 nm are irradiated from the base film 1 side of the dicing tape 10 using a metal halide lamp (irradiation intensity: 70 mW/cm ² , integrated light amount: 150mJ/cm ² ) and use it as a test piece for measurement. For the test piece, dicing was performed on a stainless steel plate (SUS304/BA plate) using an adhesion/film peeling analyzer of the peeling angle flexible type shown in FIG. 4, similar to the measurement of adhesive force A after aerobic ultraviolet irradiation described above. The adhesive force (unit: N/25 mm) of the tape 10 at a peeling angle of 90° is measured. The measurement is performed on three test pieces, and the average value of the values of the three samples is taken as the adhesive force B of the dicing tape 10 after irradiation with ultraviolet rays under oxygen-free conditions.

The ratio A/B of the adhesive force A after aerobic ultraviolet irradiation to the adhesive force B after irradiation of ultraviolet rays under anoxic conditions of the adhesive layer 2 of the dicing tape 10 was determined, and the effect of polymerization inhibition by oxygen in the adhesive layer was determined. can be evaluated.

In the dicing tape 10 of the present embodiment, the ratio A/B of the adhesive force A after irradiation with ultraviolet rays under aerobic conditions to the adhesive force B after irradiation with ultraviolet rays under anoxic conditions is specifically limited within a range that does not impair the effect of the present invention. However, it is preferable that it is in the range of 3.00 or more and 5.00 or less. When the ratio A/B of the adhesive force A after irradiation with ultraviolet rays under aerobic energy to the adhesive force B after irradiation with ultraviolet rays under anaerobic conditions is within the above range, in the adhesive layer 2 formed by the expand process of the dicing tape 10, When ultraviolet rays are irradiated on the part where the edge of the cut die bond film (adhesive layer) 3 has been peeled off (floated), the adhesive strength is not sufficiently reduced due to polymerization inhibition by oxygen contained in the surrounding air, and the adhesive strength is reduced. At this high value, it becomes easier to avoid holding, that is, the re-adhering force can be further weakened to a level where peeling can be performed more easily by pushing up the jig from the lower surface of the dicing tape 10. . As a result, when the dicing tape 10 is pushed up from the lower surface using a lifting jig, it becomes easier to create a trigger for peeling from the edge portion, which is the first to peel off the edge portion of a semiconductor chip with a die bond film. Since the required force can be made smaller, it becomes possible to more satisfactorily pick up the semiconductor chip with the die bond film from the adhesive layer 2 after irradiation with ultraviolet rays.

[Thickness of adhesive layer]

The thickness of the adhesive layer 2 of this embodiment is not particularly limited, but is preferably in the range of 3 μm to 30 μm, more preferably 5 μm to 20 μm, and 8 μm to 15 μm. The range of is particularly preferable. Likewise, the thickness is preferably 3 μm or more, more preferably 5 μm or more, and particularly preferably 8 μm or more. Additionally, the thickness is preferably 30 μm or less, more preferably 20 μm or less, and particularly preferably 15 μm or less. When the thickness of the adhesive layer 2 is less than 3 μm, there is a risk that the adhesive strength of the dicing tape 10 may decrease excessively, especially if the amount of polyisocyanate-based crosslinking agent added is large. In this case, the adhesion to the SUS ring frame is insufficient, and there is a risk that the dicing tape 10 may peel off from the SUS ring frame during the cool expand process, making it impossible to perform a normal expand process. Additionally, when used as a dicing die-bond film, poor adhesion between the adhesive layer 2 and the die-bond film 3 may occur. On the other hand, when the thickness of the adhesive layer 2 exceeds 30 ㎛, especially when the amount of polyisocyanate-based crosslinking agent added is large, when the dicing tape 10 is cool expanded, the die bond film 3 is formed by the adhesive layer. There is a risk that excessive peeling from (2) may occur, and sufficient external stress cannot be applied to the die bond film (3) through the adhesive layer (2), making it impossible to cut the die bond film (3) cleanly. There is a risk that sufficient width cannot be secured, or the cuff width may become uneven. In that case, there is a risk that pickup defects in the semiconductor chip with the die bond film may increase. Also, from the viewpoint of economic efficiency, it is not very desirable in practical terms.

(Anchor coating layer)

In the dicing tape 10 of the present embodiment, the base film is formed according to the manufacturing conditions of the dicing tape 10, the usage conditions of the dicing tape 10 after manufacturing, etc., within a range that does not impair the effect of the present invention. An anchor coating layer tailored to the composition of the base film (1) may be formed between (1) and the adhesive layer (2). By providing the anchor coating layer, the adhesion between the base film 1 and the adhesive layer 2 is improved.

(Releasable liner)

Additionally, a release liner may be provided on the surface side of the adhesive layer 2 opposite to the base film 1 (one surface side) as needed. What can be used as the release liner is not particularly limited, and examples include synthetic resins such as polyethylene, polypropylene, and polyethylene terephthalate, and paper. In addition, in order to improve the peelability of the adhesive layer 2, the surface of the release liner may be subjected to a release treatment using a silicone-based release treatment agent, a long-chain alkyl-based release treatment agent, a fluorine-based release treatment agent, or the like. The thickness of the release liner is not particularly limited, but one in the range of 10 μm or more and 200 μm or less can be suitably used.

(Method of manufacturing dicing tape)

FIG. 5 is a flow chart explaining the manufacturing method of the dicing tape 10. First, prepare a release liner (step S101: release liner preparation process). Next, a coating solution for the adhesive layer 2 (coating solution for forming the adhesive layer), which is the forming material of the adhesive layer 2, is produced (step S102: coating solution manufacturing process). The application solution can be produced, for example, by uniformly mixing and stirring the acrylic adhesive polymer, which is a component of the adhesive layer 2, a crosslinking agent, and a diluting solvent. As a solvent, for example, a general-purpose organic solvent such as toluene or ethyl acetate can be used.

Then, using the coating solution for the adhesive layer 2 prepared in step S102, the coating solution is applied on the peel-treated surface of the release liner and dried to form the adhesive layer 2 of a predetermined thickness (step S103: Adhesive layer forming process). The application method is not particularly limited and can be applied using, for example, a die coater, comma coater (registered trademark), gravure coater, roll coater, reverse coater, etc. In addition, the drying conditions are not particularly limited, but for example, the drying temperature is preferably within the range of 80°C or more and 150°C or less, and the drying time is preferably within the range of 0.5 minutes or more and 5 minutes or less. Subsequently, the base film 1 is prepared (step S104: base film preparation process). Then, the base film 1 is bonded onto the adhesive layer 2 formed on the release liner (step S105: base film bonding process). Finally, the formed adhesive layer 2 is aged for 72 hours in an environment of, for example, 40°C to crosslink and cure by reacting the acrylic adhesive polymer with a crosslinking agent (step S106: heat curing process). Through the above process, the dicing tape 10 with the adhesive layer 2 and the release liner can be manufactured sequentially from the base film side on the base film 1. In addition, in the present invention, a laminate provided with a release liner on the adhesive layer 2 may also be referred to as the dicing tape 10.

In addition, as a method of forming the adhesive layer 2 on the base film 1, the coating solution for the adhesive layer 2 is applied on the release liner, dried, and then applied on the adhesive layer 2. Although the method of bonding the base film 1 is illustrated, a method of directly applying the coating solution for the adhesive layer 2 on the base film 1 and drying it may be used. From the viewpoint of stable production, the former method is suitably used.

The dicing tape 10 of this embodiment may be wound in a roll shape or may be a form in which wide sheets are laminated. Additionally, the dicing tape 10 of these types may be cut into a predetermined size to form a sheet or tape.

<Dicing Die Bond Film>

The dicing tape 10 of this embodiment is a die-bond film (adhesive layer) 3 that is peelably adhered and laminated on the adhesive layer 2 of the dicing tape 10 in the semiconductor manufacturing process. It can also be used in the form of a dicing die bond film 20. The die bond film (adhesive layer) 3 is for adhering and connecting the separated semiconductor chips to a lead frame or wiring board (support board). Additionally, when stacking semiconductor chips, it also serves as an adhesive layer between semiconductor chips. In this case, the first-stage semiconductor chip is bonded to a semiconductor chip mounting wiring board on which terminals are formed by a die-bond film (adhesive layer) 3, and a die-bond film (adhesive layer) is further attached on the first-stage semiconductor chip. The second layer of semiconductor chips are bonded by layer 3. The connection terminals of the first-stage semiconductor chip and the second-stage semiconductor chip are electrically connected to external connection terminals via wires, but the wires for the first-stage semiconductor chip are attached to a die bond film (adhesive) during compression (die bonding). layer) (3), that is, it is embedded in the wire-embedded die bond film (adhesive layer) (3) described above. Hereinafter, an example of the die bond film (adhesive layer) 3 when the dicing tape 10 of the present embodiment is used in the form of the dicing die bond film 20 is shown, but is specifically limited to this example. It doesn't work.

(Die bond film)

The die bond film (adhesive layer) 3 is a layer made of a thermosetting adhesive composition that is cured by heat. The adhesive composition is not particularly limited, and conventionally known materials can be used. An example of a preferred embodiment of the adhesive composition is, for example, a resin composition containing a (meth)acrylic acid ester copolymer containing a glycidyl group as a thermoplastic resin, an epoxy resin as a thermosetting resin, and a phenol resin as a curing agent for the epoxy resin. Examples include thermosetting adhesive compositions in which curing accelerators, inorganic fillers, silane coupling agents, etc. are added. The die bond film (adhesive layer) 3 made of such a thermosetting adhesive composition has excellent adhesion between semiconductor chips and support substrates and between semiconductor chips and semiconductor chips, and also provides electrode embedding properties and/or wire embedding properties, etc. It is possible, and it is preferable because it has the following characteristics: it can be bonded at low temperature in the die bonding process, excellent curing is achieved in a short time, and it has excellent reliability after being molded with a sealant.

The general-purpose die bond film, which is used in a form where the wire is not embedded in the adhesive layer, and the wire-embedded die bond film, which is used in the form where the wire is embedded in the adhesive layer, are approximately the same with respect to the type of material constituting the adhesive composition. Although there are many, they are customized for general-purpose die bond films or wire-embedded die bond films by changing the mixing ratio of the materials used and the physical properties/characteristics of each material according to each purpose. Additionally, in cases where there is no problem with the reliability of the final semiconductor device, a wire-embedded die bond film may be used as a general-purpose die bond film. In other words, the wire-embedded die bond film is not limited to wire-embedding applications, and can also be used for bonding semiconductor chips to metal substrates such as lead frames and substrates with irregularities due to wiring, etc.

(Adhesive composition for general-purpose die bond film)

First, an example of an adhesive composition for a general-purpose die-bond film will be described, but it is not particularly limited to this example. As an indicator of the fluidity of the die bond film 3 formed from the adhesive composition during die bonding, for example, shear viscosity characteristics at 80°C can be mentioned. However, in the case of a general-purpose die bond film, generally, at 80°C The shear viscosity is in the range of 20,000 Pa·s to 40,000 Pa·s, and preferably represents a value in the range of 25,000 Pa·s to 35,000 Pa·s. Likewise, the shear viscosity is preferably 20,000 Pa·s or more, and more preferably 25,000 Pa·s or more. Additionally, the shear viscosity is preferably 40,000 Pa·s or less, and more preferably 35,000 Pa·s or less. As an example of a preferred embodiment of the adhesive composition for general-purpose die-bond film, the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin, which are the resin components of the adhesive composition, is 100 parts by mass. In one case, (a) the glycidyl group-containing (meth)acrylic acid ester copolymer is in the range of 52 to 90 parts by mass, the epoxy resin is in the range of 5 to 25 parts by mass, and the phenol resin is in the range of 52 to 90 parts by mass. In the range of 23 parts by mass or less, the total amount of the resin component is adjusted to 100 parts by mass, and (b) a curing accelerator is added in an amount of 0.1 parts by mass or more and 0.3 parts by mass with respect to 100 parts by mass of the total amount of the epoxy resin and the phenol resin. and (c) an inorganic filler in an amount of not less than 5 parts by mass and 20 parts by mass based on a total amount of 100 parts by mass of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin. Adhesive compositions contained in the following ranges can be mentioned.

[Glycidyl group-containing (meth)acrylic acid ester copolymer]

The glycidyl group-containing (meth)acrylic acid ester copolymer preferably contains, as copolymer units, at least an alkyl (meth)acrylate ester having an alkyl group of 1 to 8 carbon atoms and glycidyl (meth)acrylate. From the viewpoint of securing appropriate adhesion, the copolymer unit of glycidyl (meth)acrylate is preferably contained in a range of 0.5% by mass to 6.0% by mass in the total amount of the (meth)acrylic acid ester copolymer containing a glycidyl group. And, it is more preferable to include it in the range of 2.0 mass% or more and 4.0 mass% or less. In this way, the copolymer unit of glycidyl (meth)acrylate is preferably 0.5% by mass or more, more preferably 2.0% by mass or more, and 6.0% by mass or less in the total amount of (meth)acrylic acid ester copolymer. It is preferable, and it is more preferable that it is 4.0 mass % or less. Additionally, the glycidyl group-containing (meth)acrylic acid ester copolymer may, if necessary, contain other monomers such as styrene or acrylonitrile as copolymer units from the viewpoint of adjusting the glass transition temperature (Tg).

The glass transition temperature (Tg) of the glycidyl group-containing (meth)acrylic acid ester copolymer is preferably in the range of -50°C or more and 30°C or less, from the viewpoint of improving handleability as a die-bond film (suppression of tackiness). , it is more preferable that it is in the range of -10℃ or higher and 30℃ or lower. In order to make the glycidyl group-containing (meth)acrylic acid ester copolymer have such a glass transition temperature, as the (meth)acrylic acid alkyl ester having the alkyl group having 1 to 8 carbon atoms, ethyl (meth)acrylate and/or butyl (meth) ) It is preferable to use acrylate.

The weight average molecular weight Mw of the glycidyl group-containing (meth)acrylic acid ester copolymer is preferably in the range of 500,000 to 2 million, and more preferably in the range of 700,000 to 1 million. In this way, the Mw is preferably 500,000 or more, and more preferably 700,000 or more. Moreover, Mw is preferably 2 million or less, and more preferably 1 million or less. If the weight average molecular weight Mw is within the above range, it is easy to achieve appropriate adhesive strength, heat resistance, and flow properties. Here, the weight average molecular weight Mw means the standard polystyrene conversion value measured by gel permeation chromatography.

The content ratio of the glycidyl group-containing (meth)acrylic acid ester copolymer in the die-bond film (adhesive layer) 3 is the ratio of the glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component in the adhesive composition. When the total amount of the epoxy resin and phenol resin described later is 100 parts by mass as a standard, it is preferably in the range of 52 mass% to 90 mass%, and more preferably in the range of 60 mass% to 80 mass%. In this way, the content ratio is preferably 52% by mass or more, and more preferably 60% by mass or more. Moreover, it is preferable that the content ratio is 90 mass% or less, and it is more preferable that it is 80 mass% or less.

[Epoxy Resin]

The epoxy resin is not particularly limited, but includes, for example, bisphenol A-type epoxy resin, bisphenol F-type epoxy resin, bisphenol S-type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolak-type epoxy resin, and alkylphenol. Novolak-type epoxy resin, cresol novolak-type epoxy resin, bisphenol A novolak-type epoxy resin, diglycidyl ether of biphenol, diglycidyl ether of naphthalenediol, diglycidyl ether of phenols, Bifunctional epoxy resins such as diglycidyl etherified products of alcohols, alkyl-substituted products, halogenated products, and hydrogenated products thereof, and novolak-type epoxy resins are included. Additionally, other commonly known epoxy resins, such as polyfunctional epoxy resins and heterocycle-containing epoxy resins, may be used. These may be used individually, or may be used in combination of two or more types.

The softening point of the epoxy resin is preferably in the range of 70°C or more and 130°C or less from the viewpoint of adhesive strength and heat resistance. Additionally, the epoxy equivalent weight of the epoxy resin is preferably in the range of 100 to 300 from the viewpoint of sufficiently advancing the curing reaction with the phenol resin described later.

The content ratio of the epoxy resin in the die-bond film (adhesive layer) 3 is from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the die-bond film (adhesive layer) 3. The adhesive composition When the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin described later as the resin component is 100 parts by mass, it is preferably in the range of 5% by mass to 25% by mass. And, it is more preferable that it is in the range of 10 mass% or more and 20 mass% or less. In this way, the content ratio is preferably 5% by mass or more, and more preferably 10% by mass or more. Moreover, it is preferable that the content ratio is 25 mass% or less, and it is more preferable that it is 20 mass% or less.

[Phenolic resin: hardener for epoxy resin]

The curing agent for the epoxy resin is not particularly limited, but examples include a phenol resin obtained by reacting a phenol compound with a xylylene compound, which is a divalent linking group, without a catalyst or in the presence of an acid catalyst. Examples of the phenol resin include novolak-type phenol resin, resol-type phenol resin, and polyoxystyrene such as polyparaoxystyrene. Examples of the novolak-type phenol resin include phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin. These phenol resins may be used individually, or may be used in combination of two or more types. Among these phenol resins, phenol novolak resin and phenol aralkyl resin are suitably used because they tend to improve the connection reliability of the die bond film (adhesive layer) 3.

The softening point of the phenol resin is preferably in the range of 70°C or more and 90°C or less from the viewpoint of adhesive strength and heat resistance. Additionally, the hydroxyl equivalent weight of the phenol resin is preferably in the range of 100 to 200 from the viewpoint of sufficiently advancing the curing reaction with the epoxy resin.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the thermosetting resin composition, the phenolic resin preferably has 0.5 hydroxyl groups per equivalent of epoxy groups in the total epoxy resin components. It is preferable to mix in an amount ranging from 0.8 equivalent to 1.2 equivalent or less, more preferably from 0.8 equivalent to 1.2 equivalent. In this way, the compounding amount of the hydroxyl group is preferably 0.5 equivalent or more, and more preferably 0.8 equivalent or more. Moreover, it is preferable that the compounding quantity is 2.0 equivalent or less, and it is more preferable that it is 1.2 equivalent or less. Since it depends on the functional group equivalent of each resin, it cannot be stated uniformly, but for example, the content ratio of the phenol resin is the ratio of the glycidyl group-containing (meth)acrylic acid ester copolymer and the epoxy resin, which are the resin components in the adhesive composition. When the total amount of the phenol resin is 100 parts by mass as a standard, it is preferably in the range of 5% by mass or more and 23% by mass or less.

[Curing accelerator]

Additionally, a curing accelerator such as tertiary amine, imidazole, or quaternary ammonium salt can be added to the thermosetting resin composition as needed. Specific examples of such curing accelerators include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl. -2-phenylimidazolium trimellitate, etc. are mentioned, and these may be used individually, or may be used in combination of 2 or more types. The amount of the curing accelerator added is preferably in the range of 0.1 part by mass to 0.3 parts by mass, based on a total of 100 parts by mass of the epoxy resin and the phenol resin.

[Inorganic filler]

Additionally, an inorganic filler can be added to the thermosetting resin composition as needed from the viewpoint of controlling the fluidity of the die bond film (adhesive layer) 3 and improving the elastic modulus. Inorganic fillers include, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. These etc. can be mentioned, and these can also be used 1 type or 2 or more types together. Among these, crystalline silica, amorphous silica, etc. are suitably used from the viewpoint of versatility. Specifically, for example, Aerosil (registered trademark: ultrafine particle dry silica) with an average particle size of nano size is suitably used. The content ratio of the inorganic filler in the die bond film (adhesive layer) 3 is based on the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, epoxy resin, and phenol resin, which are the resin components described above. In the case of 100 parts by mass, it is preferably in the range of 5 mass% or more and 20 mass% or less.

[Silane coupling agent]

Additionally, a silane coupling agent can be added to the thermosetting resin composition as needed from the viewpoint of improving adhesion to the adherend. Examples of silane coupling agents include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. These may be used alone or in combination of two or more types. The amount of the silane coupling agent added is preferably in the range of 1.0 parts by mass to 7.0 parts by mass based on a total of 100 parts by mass of the epoxy resin and the phenol resin.

[etc]

Additionally, a flame retardant, an ion trap agent, etc. may be added to the thermosetting resin composition within a range that does not impair its function as a die bond film. Examples of flame retardants include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of ion trapping agents include hydrotalcites, bismuth hydroxide, hydrous antimony oxide, zirconium phosphate with a specific structure, magnesium silicate, aluminum silicate, triazole-based compounds, tetrazole-based compounds, and bipyridyl-based compounds. there is.

(Adhesive composition for wire-embedded die bond film)

Next, an example of an adhesive composition for a wire-embedded die-bond film will be described, but it is not particularly limited to this example. An example of an indicator of the fluidity of the die bond film 3 formed from the adhesive composition during die bonding is the shear viscosity characteristic at 80°C. However, in the case of a wire-embedded die bond film, the temperature is generally 80°C. The shear viscosity is in the range of 200 Pa·s or more and 11,000 Pa·s or less, and preferably represents a value in the range of 2,000 Pa·s or more and 7,000 Pa·s or less. Likewise, the shear viscosity is preferably 200 Pa·s or more, and more preferably 2,000 Pa·s or more. Additionally, the shear viscosity is preferably 11,000 Pa·s or less, and more preferably 7,000 Pa·s or less. As an example of a preferred embodiment of the adhesive composition for the wire-embedded die-bond film, 100 mass based on the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin, which are the resin components of the adhesive composition. In the case where (a) the glycidyl group-containing (meth)acrylic acid ester copolymer is in the range of 17 parts by mass to 51 parts by mass, the epoxy resin is in the range of 30 parts by mass to 64 parts by mass, and the phenol resin is In the range of 19 parts by mass to 53 parts by mass, the total amount of the resin component is adjusted to 100 parts by mass, and (b) a curing accelerator is included in an amount of 0.01 parts by mass or more based on 100 parts by mass of the total amount of the epoxy resin and the phenol resin. 0.07 parts by mass or less, and (c) an inorganic filler in an amount of 10 parts by mass or more and 80 parts by mass based on a total amount of 100 parts by mass of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin. Adhesive compositions containing the following ranges can be mentioned.

[Glycidyl group-containing (meth)acrylic acid ester copolymer]

The glycidyl group-containing (meth)acrylic acid ester copolymer preferably contains, as copolymer units, at least an alkyl (meth)acrylate ester having an alkyl group of 1 to 8 carbon atoms and glycidyl (meth)acrylate. In the case of wire-embedded die-bond films, it is necessary to achieve both improved fluidity during die bonding and securing adhesive strength after curing, so the ratio of copolymer units of glycidyl (meth)acrylate is high and glycidyl with low molecular weight is used. It is preferable to use the dil group-containing (meth)acrylic acid ester copolymer (A) in combination with the glycidyl group-containing (meth)acrylic acid ester copolymer (B), which has a low copolymer unit ratio of glycidyl (meth)acrylate and a high molecular weight. And, during combined use, it is preferable that the former component (A) is contained in a certain amount or more.

That is, the glycidyl group-containing (meth)acrylic acid ester copolymer in the adhesive composition for wire-embedded die-bond film specifically includes a “copolymer unit of glycidyl (meth)acrylate containing a glycidyl group ( In the total amount of the meth)acrylic acid ester copolymer, it is contained in a range of 5.0 mass% or more and 15.0 mass% or less, the glass transition temperature (Tg) is in the range of -50 ℃ or more and 30 ℃ or less, and the weight average molecular weight Mw is 100,000 or more 40 In the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the glycidyl group-containing (meth)acrylic acid ester copolymer (A) and the “(meth)acrylic acid glycidyl copolymer unit in the range of 10,000 or less are included, Contains a glycidyl group in the range of 1.0 mass% or more and 7.0 mass% or less, a glass transition temperature (Tg) in the range of -50 ℃ or more and 30 ℃ or less, and a weight average molecular weight Mw in the range of 500,000 or more or 900,000 or less. (Meth)acrylic acid ester copolymer (B)” preferably consists of a mixture. Here, the weight average molecular weight Mw means the standard polystyrene conversion value measured by gel permeation chromatography.

The content ratio of the glycidyl group-containing (meth)acrylic acid ester copolymer (A) is 60% by mass or more and 90% by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer (total of (A) and (B)). It is preferable that it is in the range of % or less. Additionally, the glycidyl group-containing (meth)acrylic acid ester copolymer may, if necessary, contain other monomers such as styrene or acrylonitrile as copolymer units from the viewpoint of adjusting the glass transition temperature (Tg).

The glass transition temperature (Tg) of the entire glycidyl group-containing (meth)acrylic acid ester copolymer is preferably in the range of -50°C or more and 30°C or less, from the viewpoint of improving handleability as a die-bond film (suppression of tackiness). It is more preferable that it is in the range of -10℃ or higher and 30℃ or lower. In order to bring the glycidyl group-containing (meth)acrylic acid ester copolymer to such a glass transition temperature, the (meth)acrylic acid alkyl ester having an alkyl group having 1 to 8 carbon atoms is selected from the group consisting of ethyl (meth)acrylate and/or butyl (meth)acrylate. ) It is preferable to use acrylate.

The content ratio of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer (sum of (A) and (B)) in the wire-embedded die bond film (adhesive layer) 3 is determined by fluidity during die bonding. And from the viewpoint of adhesive strength after curing, when the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component in the adhesive composition, and the epoxy resin and phenol resin described later is 100 parts by mass as a standard, 17% by mass. It is preferable that it is in the range of 51 mass% or less, and it is more preferable that it is in the range of 20 mass% or more and 45 mass% or less. In this way, the content ratio is preferably 17% by mass or more, and more preferably 20% by mass or more. Moreover, it is preferable that the content ratio is 51 mass% or less, and it is more preferable that it is 45 mass% or less.

[Epoxy Resin]

The epoxy resin is not particularly limited, but the same epoxy resins as those exemplified for the adhesive composition for general-purpose die-bond films described above can be used. These may be used alone or in combination of two or more types, but in the case of a wire-embedded die bond film, good embedding of the wire is achieved while ensuring adhesive strength and suppressing the generation of voids on the adhesive surface. Since it is necessary to provide , it is preferable to use a combination of two or more types of epoxy resin in controlling the fluidity and elastic modulus.

A preferred embodiment of the epoxy resin used in the wire-embedded die bond film (adhesive layer) 3 is a mixture of an epoxy resin (C) that is liquid at room temperature and an epoxy resin (D) that has a softening point of 98°C or lower, preferably 85°C or lower. It can be done by: The content ratio of the epoxy resin (C), which is liquid at room temperature, is preferably in the range of 15% by mass to 75% by mass, based on the total amount of the epoxy resin (total of (C) and (D)), and is 30% by mass or more. It is more preferable that it is in the range of 50 mass% or less. In this way, the content ratio is preferably 15% by mass or more, and more preferably 30% by mass or more. Moreover, it is preferable that the content ratio is 75 mass% or less, and it is more preferable that it is 50 mass% or less. The epoxy equivalent weight of the epoxy resin is preferably in the range of 100 to 300 from the viewpoint of sufficiently advancing the curing reaction with the phenol resin described later.

The content ratio of the epoxy resin in the die bond film (adhesive layer) 3 is in the adhesive composition from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the die bond film (adhesive layer) 3. When the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer as a resin component, the epoxy resin, and the phenol resin described later is 100 parts by mass, it is preferably in the range of 30% by mass to 64% by mass. , it is more preferable that it is in the range of 35 mass% or more and 50 mass% or less. In this way, the content ratio is preferably 30% by mass or more, and more preferably 35% by mass or more. Moreover, the content ratio is preferably 64% by mass or less, and more preferably 50% by mass or less.

[Phenolic resin: hardener for epoxy resin]

The curing agent for the epoxy resin is not particularly limited, but the same ones as those exemplified as the phenol resin for the adhesive composition for general-purpose die-bonding films described above can be used. The softening point of the phenol resin is preferably in the range of 70°C or more and 115°C or less from the viewpoint of adhesive strength and fluidity. Additionally, the hydroxyl equivalent weight of the phenol resin is preferably in the range of 100 to 200 from the viewpoint of sufficiently advancing the curing reaction with the epoxy resin.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the thermosetting resin composition, the phenolic resin preferably has 0.5 hydroxyl groups per equivalent of epoxy groups in the total epoxy resin components. It is desirable to mix it in an amount ranging from 0.6 equivalent to 1.0 equivalent, more preferably from the viewpoint of compatibility with fluidity during die bonding. Likewise, the compounding amount of hydroxyl groups in all phenol resin components is preferably 0.5 equivalent or more, more preferably 0.6 equivalent or more, further preferably 2.0 equivalent or less, and more preferably 1.0 equivalent or less. Since it varies depending on the functional group equivalent of each resin, it cannot be stated uniformly, but for example, the content ratio of the phenol resin is the ratio of the glycidyl group-containing (meth)acrylic acid ester copolymer and the epoxy, which are the resin components in the adhesive composition. When the total amount of the resin and the phenol resin is 100 parts by mass as a standard, it is preferably in the range of 19 mass% or more and 53 mass% or less.

[Curing accelerator]

Additionally, a curing accelerator such as tertiary amine, imidazole, or quaternary ammonium salt can be added to the thermosetting resin composition as needed. As such a curing accelerator, the same ones as those exemplified as the curing accelerator for the adhesive composition for general-purpose die-bond film described above can be similarly used. The amount of the curing accelerator added is preferably in the range of 0.01 to 0.07 parts by mass, based on a total of 100 parts by mass of the epoxy resin and the phenol resin, from the viewpoint of suppressing the generation of voids in the adhesive surface. .

[Inorganic filler]

In addition, the thermosetting resin composition may optionally contain inorganic substances from the viewpoint of improving the handling of the die bond film (adhesive layer) 3, adjusting the fluidity during die bonding, providing thixotropic properties, improving adhesive strength, etc. Fillers can be added. As the inorganic filler, the same inorganic filler as exemplified as the inorganic filler for the adhesive composition for a general-purpose die-bond film described above can be used, but among these, a silica filler is suitably used from the viewpoint of versatility. The content ratio of the inorganic filler in the die bond film (adhesive layer) 3 is based on the above-mentioned resin component, Glycy, from the viewpoint of fluidity during die bonding, cleavage properties during cool expand, and adhesive strength. When the total amount of the dil group-containing (meth)acrylic acid ester copolymer, epoxy resin, and phenol resin is 100 parts by mass as a standard, it is preferably in the range of 10 mass% to 80 mass%, and 15 mass% to 50 mass%. A range of is more preferable. In this way, the content ratio is preferably 10% by mass or more, and more preferably 15% by mass or more. Moreover, the content ratio is preferably 80% by mass or less, and more preferably 50% by mass or less.

The inorganic filler is a mixture of two or more types of inorganic fillers with different average particle diameters for the purpose of improving the cleavability of the die bond film (adhesive layer) 3 during cool expansion and sufficiently developing adhesive strength after curing. desirable. Specifically, it is preferable to use an inorganic filler with an average particle diameter in the range of 0.1 μm to 5 μm as the main inorganic filler component, accounting for 80% by mass or more based on the total mass of the inorganic filler. When it is necessary to suppress foaming of the die-bond film (adhesive layer) 3 in the semiconductor chip manufacturing process due to excessively high fluidity of the die-bond film (adhesive layer) 3 or to improve the adhesive strength after curing, the average particle diameter is 0.1. An inorganic filler smaller than ㎛ may be used together with the main inorganic filler component described above in a blending amount of 20% by mass based on the total mass of the inorganic filler.

[Silane coupling agent]

Additionally, a silane coupling agent can be added to the thermosetting resin composition as needed from the viewpoint of improving adhesion to the adherend. As the silane coupling agent, the same ones as those exemplified as the silane coupling agent for the adhesive composition for general-purpose die bond films described above can be used similarly. The amount of the silane coupling agent added is preferably in the range of 0.5 parts by mass to 2.0 parts by mass with respect to a total of 100 parts by mass of the epoxy resin and the phenol resin from the viewpoint of suppressing the generation of voids in the adhesive surface. do.

[etc]

Additionally, a flame retardant, an ion trap agent, etc. may be added to the thermosetting resin composition as long as the function as the die bond film 3 is not impaired. As these flame retardants and ion trap agents, the same ones as those exemplified as the flame retardants and ion trap agents for the adhesive composition for general-purpose die bond films described above can be similarly used.

(Thickness of die bond film (adhesive layer))

The thickness of the die bond film (adhesive layer) 3 is not particularly limited, but is necessary to ensure adhesive strength, properly bury wires for semiconductor chip connection, or sufficiently fill irregularities such as wiring circuits on the substrate. , it is preferable that it is in the range of 5㎛ or more and 200㎛ or less. If the thickness of the die bond film (adhesive layer) 3 is less than 5 μm, there is a risk that the adhesive strength between the semiconductor chip and the lead frame or wiring board, etc. may become insufficient. On the other hand, if the thickness of the die bond film (adhesive layer) 3 is greater than 200 μm, it becomes uneconomical and the response to miniaturization and thinning of semiconductor devices is likely to be inadequate. In addition, since the adhesiveness is high and the thickness of the semiconductor device can be reduced, the film thickness of the film adhesive is more preferably in the range of 10 μm to 100 μm, and particularly preferably in the range of 20 μm to 75 μm. do. In this way, the thickness of the die bond film (adhesive layer) 3 is preferably 5 μm or more, more preferably 10 μm or more, and especially preferably 20 μm or more. Additionally, the thickness is preferably 200 μm or less, more preferably 100 μm or less, and especially preferably 75 μm or less.

More specifically, the thickness when used as a general-purpose die bond film (adhesive layer) is preferably, for example, in the range of 5 ㎛ to 30 ㎛, especially 10 ㎛ to 25 ㎛, and wire-embedded die The thickness when used as a bond film (adhesive layer) is preferably, for example, in the range of 30 μm or more and 100 μm or less, and especially in the range of 40 μm or more and 80 μm or less. In this way, the thickness when used as a general-purpose die-bond film (adhesive layer) is preferably 5 μm or more, and more preferably 10 μm or more. Moreover, the thickness is preferably less than 30 μm, and more preferably 25 μm or less. In addition, the thickness when used as a wire-embedded die bond film (adhesive layer) is preferably 30 μm or more, and more preferably 40 μm or more. Additionally, the thickness is preferably 100 μm or less, and more preferably 80 μm or less.

(Method of manufacturing die bond film)

The die bond film (adhesive layer) 3 is manufactured, for example, as follows. First, prepare a release liner. Additionally, as the release liner, the same release liner as the release liner disposed on the adhesive layer 2 of the dicing tape 10 can be used. Next, a coating solution for the die bond film (adhesive layer) 3, which is the forming material of the die bond film (adhesive layer) 3, is prepared. The application solution includes, for example, a glycidyl group-containing (meth)acrylic acid ester copolymer, an epoxy resin, a curing agent for the epoxy resin, and an inorganic filler, which are components of the die bond film (adhesive layer) 3 as described above. It can be produced by uniformly mixing and dispersing a thermosetting resin composition containing a curing accelerator, a silane coupling, etc., and a diluting solvent. As a solvent, for example, a general-purpose organic solvent such as methyl ethyl ketone or cyclohexanone can be used.

Next, the coating solution for the die bond film (adhesive layer) 3 is applied and dried on the peeling surface of the release liner serving as a temporary support, and a die bond film (adhesive layer) of a predetermined thickness is formed. layer) (3) is formed. Thereafter, the release treated surface of the other release liner is bonded onto the die bond film (adhesive layer) 3. The application method is not particularly limited and can be applied using, for example, a die coater, comma coater (registered trademark), gravure coater, roll coater, reverse coater, etc. Additionally, as drying conditions, for example, the drying temperature is preferably within the range of 60°C or more and 200°C or less, and the drying time is preferably within the range of 1 minute or more and 90 minutes or less. In addition, in the present invention, a laminate provided with a release liner on both sides or one side of the die bond film (adhesive layer) 3 may also be referred to as the die bond film (adhesive layer) 3.

(Manufacturing method of dicing die bond film)

The manufacturing method of the dicing die bond film 20 is not particularly limited, but can be manufactured by a conventionally known method. For example, the dicing die bond film 20 first prepares the dicing tape 10 and the die bond film 3 individually, and then prepares the adhesive layer 2 of the dicing tape 10. and the release liner of the die bond film (adhesive layer) 3, respectively, and the adhesive layer 2 of the dicing tape 10 and the die bond film (adhesive layer) 3 are separated by, for example, a hot roll. All you need to do is press and bond using a press roll such as a laminator. The bonding temperature is not particularly limited, and is preferably in the range of, for example, 10°C or more and 100°C or less, and the bonding pressure (linear pressure) is preferably in the range of, for example, 0.1 kgf/cm or more and 100 kgf/cm or less. . In addition, in the present invention, the dicing die bond film 20 is a laminate provided with a release liner on the adhesive layer 2 and the die bond film (adhesive layer) 3, and is also referred to as the dicing die bond film 20. There are cases where it is called. In the dicing die bond film 20, the release liner provided on the adhesive layer 2 and the die bond film (adhesive layer) 3 is used when providing the dicing die bond film 20 to a workpiece. Just peel it off.

The dicing die bond film 20 may be wound in a roll shape or may be a form in which wide sheets are stacked. Additionally, the dicing tape 10 of these types may be cut into a predetermined size to form a sheet or tape.

For example, as disclosed in Japanese Patent Application Laid-Open No. 2011-159929, an adhesive layer (die bond film 3) pre-cut into the shape of a wafer constituting a semiconductor element on a release substrate (release liner). And it can also be manufactured in the form of a film roll in which a plurality of adhesive films (dicing tape 10) are formed into island shapes. In this case, the dicing tape 10 is formed into a circular shape with a larger diameter than the die bond film (adhesive layer) 3, and the die bond film (adhesive layer) 3 is circular with a larger diameter than the semiconductor wafer 30. It is formed by When pre-cutting is performed in the form of such a film roll, the dicing tape 10 is locally heated and/or cooled in order to continuously and well peel and remove the excess dicing tape 10 without breaking. There are cases where it is processed. Here, the heating temperature is selected appropriately, but is preferably in the range of 30°C or more and 120°C or less. The heating time is selected appropriately, but is preferably in the range of 0.1 second or more and 10 seconds or less. Since the dicing tape 10 of the present invention has a certain heat resistance, there is no particular problem in its handling even if heat treatment is performed at a high temperature of, for example, 120°C.

<Method for manufacturing semiconductor chips>

Figure 6 shows a semiconductor with a die bond film using a dicing die bond film 20 in which a die bond film (adhesive layer) 3 is laminated on the adhesive layer 2 of the dicing tape 10 of the present embodiment. This is a flow chart explaining the chip manufacturing method. In addition, Figure 7 shows a ring frame (wafer ring) 40 at the edge of the dicing tape 10 of the dicing die bond film 20 (exposed portion of the adhesive layer 2), and the die bond film at the center. This is a schematic diagram showing a state in which separate semiconductor wafers (plural semiconductor chips) are attached on (adhesive layer) (3). In addition, Figures 8 (a) to (f) show a grinding process of a semiconductor wafer in which a plurality of modified regions are formed by laser light irradiation and a dicing die bond film of a plurality of cut semiconductor wafers (a plurality of semiconductor chips). (20) is a cross-sectional view showing an example of the bonding process. Figures 9 (a) to (f) show expand to obtain semiconductor chips with individual die bond films from a plurality of cut thin semiconductor wafers bonded and held on the dicing die bond film 20. This is a cross-sectional view showing an example of a manufacturing method including a series of processes up to pickup.

(Method of manufacturing semiconductor chip using dicing die bond film 20)

The manufacturing method of the semiconductor chip using the dicing die bond film 20 is not particularly limited and may follow a conventionally known method, but here, the manufacturing method by SDBG (Stealth Dicing Before Griding) will be described as an example.

First, as shown in FIG. 8(a), for example, a semiconductor wafer W containing silicon as a main component has a plurality of integrated circuits (not shown) mounted on the first surface Wa. Prepare (W) (step S201 in FIG. 6: preparation process). Then, a wafer processing tape (backgrinding tape) T having an adhesive surface Ta is bonded to the first surface Wa side of the semiconductor wafer W.

Next, as shown in (b) of FIG. 8, in a state where the semiconductor wafer W is held on the tape T for wafer processing, the laser light with the condensed point inside the wafer is directed to the side opposite to the tape T for wafer processing, that is, The semiconductor wafer W is irradiated from the second surface Wb side of the semiconductor wafer along the lattice-shaped dicing line A modified region 30b is formed (step S202 in FIG. 6: modified region forming process). The modified area 30b is a weakened area for cutting and separating the semiconductor wafer W into semiconductor chips through a grinding process. Regarding the method of forming the modified region 30b along the dicing line on the semiconductor wafer W by irradiating laser light, see, for example, Japanese Patent No. 3408805 and Japanese Patent Laid-Open No. 2002-192370. , the method disclosed in Japanese Patent Application Laid-Open No. 2003-338567, etc. may be referred to.

Next, as shown in (c) of FIG. 8, in a state where the semiconductor wafer W is held on the wafer processing tape T, the semiconductor wafer W is removed from the second surface Wb until it reaches a predetermined thickness. It is made thin by grinding processing. Here, the thickness of the semiconductor wafer 30 to be thinned is preferably adjusted to a thickness of 100 μm or less, more preferably 10 μm or more and 50 μm or less from the viewpoint of thinning of the semiconductor device. In this way, the thickness of the thinned semiconductor wafer 30 is preferably 10 μm or more, more preferably 100 μm or less, and more preferably 50 μm or less. In this grinding/thinning process, when the grinding load of the grinding wheel is applied to the thinned semiconductor wafer 30, cracks grow in the vertical direction starting from the modified region 30b formed in (b) of FIG. 8. Then, along the cutting line 30c corresponding to the dicing line X, the wafer processing tape T is divided into a plurality of semiconductor chips 30a.

Next, as shown in FIGS. 8(d) and 8(e), a plurality of semiconductor chips 30a held on the tape T for wafer processing are die bonded film 3 of the separately prepared dicing die bond film 20. ) is bonded to (step S204 in FIG. 6: bonding process). In this process, after peeling the release liner from the adhesive layer 2 and die bond film (adhesive layer) 3 of the dicing die bond film 20 cut into a circle, as shown in FIG. 7, the die is The ring frame (wafer ring) 40 is attached to the edge portion (exposed portion of the adhesive layer 2) of the dicing tape 10 of the single die bond film 20, and the adhesive of the dicing tape 10 is attached. On the die bond film (adhesive layer) 3 laminated on the upper central portion of the layer 2, a plurality of semiconductor chips 30a held by a tape for wafer processing T are attached. After this, as shown in FIG. 8(f), the tape T for wafer processing is peeled off from the plurality of thin semiconductor chips 30a. The sticking is performed while applying pressure using a pressing means such as a compression roll. The sticking temperature is not particularly limited, and for example, it is preferably in the range of 20°C or more and 130°C or less, and from the viewpoint of reducing warpage of the semiconductor chip 30a, it is more preferable that it is in the range of 40°C or more and 100°C or less. do. In this way, the sticking temperature is preferably 20°C or higher, and more preferably 40°C or higher. Moreover, the sticking temperature is preferably 130°C or lower, and more preferably 100°C or lower. The sticking pressure is not particularly limited, and is preferably in the range of 0.1 MPa or more and 10.0 MPa or less. Since the dicing tape 10 of the present invention has a certain heat resistance, there is no particular problem in its handling even if the sticking temperature is high.

Subsequently, after the ring frame 40 is attached on the adhesive layer 2 of the dicing tape 10 in the dicing die bond film 20, as shown in FIG. 9(a), a plurality of The dicing die bond film 20 carrying the semiconductor chip 30a is fixed to the holding tool 41 of the expand device. As shown in FIG. 9(b), the thin semiconductor wafer 30 (a plurality of semiconductor chips 30a) cut at the cutting line 30c is reorganized into a plurality of semiconductor chips 30a with a die bond film. To enable dicing, a die bond film 3 to be cut along the dicing line X in the next step is attached to the lower surface.

Next, a first expand process, that is, a cool expand process, is performed under relatively low temperature conditions (e.g., -30°C or more and 0°C or less) as shown in FIG. 9(c), and the dicing die is The die bond film (adhesive layer) 3 of the bond film 20 is cut into small pieces of die bond film (adhesive layer) 3a corresponding to the size of the semiconductor chip 30a, and the die bond film 3a is formed. The equipped semiconductor chip 30a is obtained (step S205 in FIG. 6: cool expand process). In this process, a hollow cylindrical pushing member (not shown in the drawing) provided in the expand device is raised in contact with the dicing tape 10 on the lower side of the dicing die bond film 20, and is separated. The dicing tape 10 of the dicing die bond film 20 to which the diced semiconductor wafer 30 (a plurality of semiconductor chips 30a) is bonded includes the radial direction and the circumferential direction of the semiconductor wafer 30. It expands to stretch in two dimensions. The internal stress generated by the stretching of the dicing tape 10 in the entire direction by cool expand is the die bond film 3 attached to the separated semiconductor wafer 30 (plural semiconductor chips 30a). is transmitted as external stress. Due to this external stress, the die bond film 3 brittle at low temperature is cut into small pieces of die bond film 3a of the same size as the semiconductor chip 30a, and the semiconductor chip with the die bond film 3a is formed. (30a) is obtained.

The temperature conditions in the cool expand process are, for example, -30°C or higher and 0°C or lower, preferably -20°C or higher and -5°C or lower, and more preferably -15°C or higher and -5°C or lower. The range is ℃ or lower, and is particularly preferably -15℃. Likewise, the temperature conditions are preferably -30°C or higher, more preferably -20°C or higher, preferably 0°C or lower, more preferably -5°C or lower, and especially preferably -15°C.

The expand speed (the speed at which the hollow cylindrical pushing member rises) in the cool expand process is preferably in the range of 0.1 mm/sec or more and 1000 mm/sec or less, and more preferably 10 mm/sec. The range is from more than 1 second to 300 mm/second or less. In this way, the expand speed is preferably 0.1 mm/sec or more, and more preferably 10 mm/sec or more. Additionally, the expand speed is preferably 1000 mm/sec or less, and more preferably 300 mm/sec or less. In addition, the expand amount (push-up height of the hollow cylindrical push-up member) in the cool expand process is preferably in the range of 3 mm or more and 16 mm or less.

Here, the dicing tape 10 of the present invention first has an average value (Y _MD + Y _TD )/2 of the elastic modulus of the base film 1 upon 5% elongation at 0° C. of 165 MPa or more and 260 MPa or less. Since it is adjusted to a range, the internal stress generated by cool expansion in the entire direction of the dicing tape 10 is tightly adhered to the adhesive layer 2 containing a specific active energy ray-curable adhesive composition. It is efficiently transmitted as external stress to the die bond film 3, and as a result, the die bond film 3 is cut neatly and with good yield. In addition, in the dicing tape 10 of the present invention, the adhesive layer 2 is composed of an adhesive composition containing as main components an acrylic adhesive polymer having a specific hydroxyl value and a specific amount of a polyisocyanate-based crosslinking agent, and the polyisocyanate Since the equivalent ratio (-NCO)/(-OH) of the isocyanate group (-NCO) of the system crosslinking agent and the hydroxyl value (-OH) of the acrylic adhesive polymer is controlled to be 0.14 or more and 1.32 or less, the pressure-sensitive adhesive layer (2) after the crosslinking reaction A hardness capable of transmitting an appropriate impact to the interface between the edge portion of the die bond film and the adhesive layer 2 immediately below it at the moment the die bond film 3 is cut, and the distance away from the die bond film 3. In addition to providing a cohesive force capable of transmitting directional stress, an appropriate initial adhesion to the die bond film 3 is also provided. As a result, in the small piece of die bond film 3a (adhesive layer) holding the semiconductor chip 30a, which is cleaved by cool expand, the dicing tape 10 on the edge portion (part around all directions) is cut. ) is promoted from the adhesive layer 2, and a partially peeled state of the dicing tape 10 from the adhesive layer 2 is appropriately formed. Additionally, in this case, the stress applied to the die bond film 3 and the adhesive layer 2 and the initial adhesion to the die bond film 3 are appropriately suppressed, so the cut die bond film is bonded to the adhesive layer ( 2) There is no case of excessive peeling, and a sufficient kerf width can be ensured, and damage due to collision between semiconductor chips and displacement from the fixed position on the adhesive layer 2 can be avoided.

Additionally, in Figure 9(c), for convenience, the edge portion of the small piece of die bond film 3a (adhesive layer) holding the semiconductor chip 30a is covered with the adhesive layer (adhesive layer) of the dicing tape 10. 2), but in reality, as shown in the enlarged cross-sectional view of FIG. 10, the edge portion of the small piece of die bond film 3a (adhesive layer) holding the semiconductor chip 30a. is appropriately peeled from the adhesive layer 2 of the dicing tape 10, and the central portion of the die bond film 3a (adhesive layer) is in close contact with the adhesive layer 2 of the dicing tape 10. It is done.

After the cool expand process, the hollow cylindrical lifting member of the expand device is lowered, and the expanded state in the dicing tape 10 is released.

Next, a second expand process under relatively high temperature conditions (e.g., 10°C or more and 30°C or less), that is, a room temperature expand process, is performed as shown in FIG. 9(d), forming a die bond film ( The distance (kerf width) between the semiconductor chips 30a provided with the adhesive layer 3a can be widened. In this process, a cylindrical table (not shown in the drawing) provided in the expand device is raised in contact with the dicing tape 10 on the lower side of the dicing die bond film 20, and the dicing die bond is formed. The dicing tape 10 of the film 20 is expanded (step S206 in FIG. 6: room temperature expand process). By securing a sufficient distance (kerf width) between the semiconductor chips 30a equipped with the die bond film (adhesive layer) 3a through the room temperature expand process, the recognition of the semiconductor chip 30a by a CCD camera, etc. is improved, Re-adhesion of the semiconductor chips 30a with the die bond film (adhesive layer) 3a, which occurs when adjacent semiconductor chips 30a come into contact with each other during pickup, can be prevented. As a result, in the pickup process described later, the pickup performance of the semiconductor chip 30a with the die bond film (adhesive layer) 3a is improved.

Also, in Figure 9(d), for convenience, the edge portion of the small piece of die bond film 3a (adhesive layer) holding the semiconductor chip 30a is covered with the adhesive layer (adhesive layer) of the dicing tape 10. 2), but in reality, as shown in the enlarged cross-sectional view of FIG. 10, the edge portion of the small piece of die bond film 3a (adhesive layer) holding the semiconductor chip 30a. is appropriately peeled from the adhesive layer 2 of the dicing tape 10, and the central portion of the die bond film 3a (adhesive layer) is in close contact with the adhesive layer 2 of the dicing tape 10. It is done. In the case of room temperature expand, compared to the case of cool expand, the environmental temperature is higher, so the adhesion of the area where the die bond film 3a (adhesive layer) and the adhesive layer 2 are in close contact is high, and furthermore, the dicing It is possible to perform expansion while suppressing the tensile stress generated in the tape 10. Accordingly, in some cases, the peeling progresses slightly from the peeling state of the die bond film 3a after cool expand in Fig. 9(c) by the room temperature expand process, but there is no case in which peeling progresses excessively.

The temperature conditions in the room temperature expand process are, for example, 10°C or higher, and are preferably in the range of 15°C or higher and 30°C or lower. Likewise, the temperature conditions are preferably 10°C or higher, more preferably 15°C or higher, and more preferably 30°C or lower.

The expand speed (the speed at which the cylindrical table rises) in the room temperature expand process is, for example, in the range of 0.1 mm/sec to 50 mm/sec, and preferably 0.3 mm/sec to 30 mm/sec. The range is less than a second. In this way, the expand speed is preferably 0.1 mm/sec or more, and more preferably 0.3 mm/sec or more. Additionally, the expand speed is preferably 50 mm/sec or less, and more preferably 30 mm/sec or less. In addition, the expand amount in the room temperature expand process is, for example, in the range of 3 mm or more and 20 mm or less.

After the dicing tape 10 expands to room temperature by raising the table, the table vacuum-sucks the dicing tape 10. Then, while maintaining the suction by the table, the table is lowered along with the workpiece, and the expanded state in the dicing tape 10 is released. In order to suppress narrowing of the kerf width of the semiconductor chip 30a with the die bond film (adhesive layer) 3a on the dicing tape 10 after the expanded state is released, the dicing tape 10 is vacuum adsorbed to the table. In this state, the circumferential portion of the dicing tape 10 outside the holding area of the semiconductor chip 30a is heat-shrinked by hot air injection, and the dicing tape 10 is formed by expansion. It is desirable to maintain tension by relieving the sagging. After the heat shrinkage, the vacuum suction state by the table is released. The temperature of the hot air may be adjusted depending on the physical properties of the base film 1, the distance between the hot air outlet and the dicing tape 10, and the air volume, but is preferably in the range of, for example, 200°C or more and 250°C or less. In addition, it is preferable that the distance between the hot air outlet and the dicing tape 10 is, for example, in the range of 15 mm or more and 25 mm or less. In addition, the air volume is preferably in the range of, for example, 35 L/min or more and 45 L/min or less. Additionally, when performing the heat shrinking process, the stage of the expand device is rotated at a rotation speed in the range of, for example, 3°/sec to 10°/sec, while the semiconductor chip 30a of the dicing tape 10 is rotated. ) Hot air is sprayed along the circumferential portion outside the holding area.

The dicing tape 10 of the present invention is a resin composition containing, as its base film 1, a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid-based copolymer and a polyamide resin (PA). Since the resin film composed of It is said to be. For this reason, in the heat shrinking process, when high-temperature hot air is sprayed on the sagging portion (circumferential portion) of the dicing tape 10 caused by the expansion, the circumferential portion of the dicing tape 10 is removed without any problem. Since sagging can be eliminated by heating and shrinking, the cuff width widened by room temperature expand can be maintained by the tension of the dicing tape 10.

Figure 11 shows a semiconductor chip in which the edge portion of the small piece die bond film 3a is partially peeled off from the adhesive layer 2 of the dicing tape 10 after going through the cool expand process to the shrink process. (30a) is an enlarged plan view when observed under a microscope from the back side (base film side). The area of the edge portion of the small piece of die bond film 3a peeled off from the adhesive layer 2 is not particularly limited as long as it does not impair the effect of the present invention, but for example, the semiconductor shown in FIG. 11 In the state 9 (corresponding to part 9 in FIG. 10) of a small piece of die bond film 3a held on the adhesive layer 2 observed from the back side (base film side) of the chip 30a. In this case, the area of the edge portion (hatched portion) of the small piece of die bond film 3a peeled from the adhesive layer 2 is S1, and the area of the small piece of die bond film 3a that is in close contact with the adhesive layer 2 is S1. When the area of the portion (white portion) is set to S2, the ratio of the area S1 of the edge portion of the small piece of die bond film 3a peeled from the adhesive layer 2 to the entire small piece of die bond film 3a is It is preferable that it is in the range of 10% to 45% of the area (=S1+S2). More preferably, it is in the range of 15% to 40%. Likewise, the ratio of the area S1 is preferably 10% or more, more preferably 15% or more, further preferably 45% or less, and more preferably 40% or less.

When the ratio of the area S1 is less than 10%, the adhesive force A is reduced after aerobic ultraviolet irradiation in the total force required to peel the semiconductor chip 30a with the die bond film 3a from the adhesive layer 2. There is a risk that the effect, that is, the effect of reducing the force required to peel off the edge portion of the semiconductor chip 30a with the die bond film 3a, may not be sufficiently reflected. As a result, it is difficult to create an opportunity for peeling from the edge portion when the dicing tape 10 is pushed up from the lower surface of the dicing tape 10 using a lifting jig during pickup, which will be described later, and thus, compared to the past, the die bond film 3a There is a possibility that the effect of improving the pickup performance of the provided semiconductor chip 30a may be hardly confirmed, or the effect may be limited to a small amount.

When the ratio of the area S1 exceeds 45%, that is, in the cool expand process, when the die bond film 3 is excessively peeled from the adhesive layer 2, the adhesive layer ( Since sufficient external stress cannot be applied through 2), there is a risk that the die bond film 3 cannot be cut cleanly, a sufficient kerf width cannot be secured, or the kerf width may become uneven. Additionally, there is a risk that the semiconductor chip 30a with the die bond film 3a may be misaligned or come off unintentionally during the subsequent manufacturing process. In addition, in the pickup process described later, when the excessively peeled die bond film is re-adhered to the adhesive layer 2, the re-adhered area becomes excessively large, so that the adhesive layer 2 does not meet the requirements of the present invention. Even if it is composed of an active energy ray-curable adhesive composition, in order to peel the dicing tape 10 by pushing it up with a jig from the lower surface, there is a risk that a large amount of energy is required due to an increase in the large reattachment area. there is. As a result, the pickup yield of the semiconductor chip 30a with the die bond film 3a decreases.

In other words, the area S1 refers to the edge portion of the die bond film 3a peeled off by expansion and the adhesive layer 2 irradiated with ultraviolet rays under aerobic conditions exposed to air in the next pick-up step. , This is the area that is instantly re-adhered by contact and landing of the suction collet before the dicing tape 10 is pushed up from the lower surface using a pushing jig. Therefore, when the ratio of the area S1 is in the range of 10% to 40%, by applying the adhesive layer 2 whose adhesive force A is adjusted to 3.50N/25mm after aerobic ultraviolet irradiation, the die bond film 3a It becomes easy to most effectively demonstrate the function of reducing the force required for peeling off the edge portion of the provided semiconductor chip 30a. On the other hand, in the portion of the area S2 that is in close contact with the adhesive layer 2 of the die-bond film 3a whose ratio to the entire area of the small piece of die-bond film 3a is in the range of 55% to 90%, Since the adhesive force B of the adhesive layer 2 is adjusted to 0.25 N/25 mm or more and 0.70 N/25 mm or less after irradiation with oxygen-free ultraviolet rays, the peeling of the edge portion of the die bond film 3a continues toward the center. Peeling of the die bond film 3a from the adhesive layer 2 tends to progress. In the next pick-up process, the total energy required to peel the semiconductor chip 30a with the die bond film 3a from the adhesive layer 2 is in the area S1 and the area S2 described above. It is the total sum of each peeling force reduction effect, and in the dicing tape 10 of this embodiment, in the balance of the ratio of the area S1 and the area S2, it is easy to reduce this total energy compared to the prior art. It will be dissolved.

The method of calculating the ratio of the area S1 and the area S2 is not particularly limited, and can be obtained according to a conventionally known method. For example, microscopic observation of a state in which the edge portion of the cut small piece die bond film 3a is partially peeled from the adhesive layer 2 of the dicing tape 10 is observed from the back side of the semiconductor chip (base film side). A method of binarizing the part corresponding to the area S1 and the part corresponding to the area S2 using image processing software, etc., and calculating the ratio of each area, or printing the image on paper, etc., One method is to cut each part according to its shape, measure the mass, and calculate the ratio of each area from the mass ratio.

Subsequently, by irradiating the dicing tape 10 with an active energy ray from the base film 1 side, the adhesive layer 2 is cured and contracted, and the adhesive layer 2 is attached to the die bond film 3a. Reduces the adhesion to the adhesive (step S207 in FIG. 6: active energy ray irradiation process). Here, examples of active energy rays used in the post-irradiation include ultraviolet rays, visible rays, infrared rays, electron beams, β-rays, and γ-rays. Among these active energy rays, ultraviolet rays (UV) and electron beams (EB) are preferable, and ultraviolet rays (UV) are particularly preferably used. The light source for irradiating ultraviolet rays (UV) is not particularly limited, and examples include black light, ultraviolet fluorescent lamp, low-pressure mercury lamp, medium-pressure mercury lamp, high-pressure mercury lamp, ultra-high pressure mercury lamp, carbon arc lamp, metal halide lamp, xenon lamp, etc. can be used. Additionally, ArF excimer laser, KrF excimer laser, excimer lamp, or synchrotron synchrotron radiation can also be used. The amount of ultraviolet rays (UV) irradiated is not particularly limited, and for example, it is preferably in the range of 100 mJ/cm ² or more and 2,000 J/cm ² or less, and is preferably in the range of 150 mJ/cm ² or more and 1,000 J/cm ² or less. It is more preferable. In this way, the amount of irradiated light is preferably 100 mJ/cm ² or more, and more preferably 150 mJ/cm ² or more. Additionally, the amount of irradiated light is preferably 2,000 J/cm ² or less, and more preferably 1,000 J/cm ² or less.

Here, as described above, the dicing tape 10 of the present invention has an adhesive layer (2) containing an active energy ray-curable adhesive composition containing an acrylic adhesive polymer having an active energy ray reactive carbon-carbon double bond. ), when ultraviolet rays are irradiated to an integrated light amount of 150 mJ/cm ² under aerobic and anoxic conditions, the adhesive force A (peel angle : 90°, peeling speed: 300 mm/min) in the range of 3.50 N/25 mm or less, adhesive strength B (peel angle: 90°) after irradiation with ultraviolet rays under oxygen-free conditions to a stainless steel plate (SUS304/BA plate) at 23°C Since the cured state by the crosslinking reaction of the adhesive layer 2 is adjusted so that the peeling speed: 300 mm/min) is in the range of 0.25 N/25 mm or more and 0.70 N/25 mm or less, the die bond film 3a The force required when peeling the equipped semiconductor chip 30a from the adhesive layer 2 can be reduced compared to the prior art. As a result, in the pickup process described later, the pickup performance of the semiconductor chip 30a with the die bond film 3a becomes good. In this case, the active energy ray reactive carbon-carbon double bond concentration is preferably adjusted to a value within the range of 0.85 meq to 1.50 meq per 1 g of the active energy ray curable adhesive composition.

Subsequently, the so-called pickup is performed to peel off the semiconductor chip 30a with the individual die bond film (adhesive layer) 3a from the adhesive layer 2 after irradiation with ultraviolet rays (UV) of the dicing tape 10. (Step S208 in FIG. 6: peeling (pick-up) process).

As the above-mentioned pickup method, for example, as shown in Fig. 9(e), a die bond film (adhesive layer) 3a is provided in which an adsorption collet 50 is brought into contact with and lands on the surface of the semiconductor chip 30a. By pushing up the semiconductor chip 30a on the second side of the base film 1 of the dicing tape 10 by the pushing pin (needle) 60, the semiconductor chip 30a with the die bond film 3a is formed. In addition to promoting peeling from the edge portion, as shown in FIG. 9(f), the semiconductor chip 30a with the pushed up die bond film (adhesive layer) 3a is picked up by a pickup device (not shown). A method of peeling off the adhesive layer 2 of the dicing tape 10 by suction and lifting by the suction collet 50 can be used. Accordingly, the semiconductor chip 30a with the die bond film (adhesive layer) 3a is obtained.

The pick-up conditions are not particularly limited as long as they are within a practically allowable range, and usually the push-up speed of the push-up pin (needle) 60 is within the range of 1 mm/sec to 100 mm/sec. Although it is often set, when the thickness of the semiconductor chip 30a (thickness of the semiconductor wafer) is as thin as 100㎛, from the viewpoint of suppressing damage to the thin film semiconductor chip 30a, it is 1 mm/sec or more and 20 mm/sec. It is desirable to set it within the following range. From the viewpoint of productivity, it is more preferable to set it within the range of 5 mm/sec or more and 20 mm/sec or less. In this way, the pushing speed is preferably 1 mm/sec or more, and more preferably 5 mm/sec or more. Additionally, the pushing speed is preferably 100 mm/sec or less, and more preferably 20 mm/sec or less.

In addition, the push-up height of the push-up pin, which enables pickup of the semiconductor chip 30a without being damaged, is preferably set within a range of 100 μm or more and 600 μm or less, for example, from the same viewpoint as above. From the viewpoint of reducing stress on the semiconductor thin film chip, it is more preferable to set it within the range of 100 ㎛ or more and 450 ㎛ or less. From the viewpoint of productivity, it is particularly preferable to set it within the range of 100 ㎛ or more and 350 ㎛ or less. It can be said that dicing tapes that can make such a push-up height smaller have excellent pickup properties.

As explained above, the dicing tape 10 of the present invention, which is composed of the base film 1 and the adhesive layer 2, is used to apply the adhesive layer 2 of the dicing tape 10 in the semiconductor manufacturing process. When used in the form of a dicing die bond film 20 on which a die bond film (adhesive layer) 3 is adhered and laminated so as to be peelable, the die bond has high fluidity and a thick thickness similar to a wire-embedded die bond film. Even in the case of application by bonding the film, the die-bond film 3 is cut satisfactorily by cool expand, and in the die-bond film 3a after cutting, the edge portion is adhered to the adhesive of the dicing tape 10. A state appropriately peeled from the layer 2 is formed, and the peeled edge portion of the die bond film 3a of each cut semiconductor chip 30a with the die bond film 3a is exposed to the adhesive after ultraviolet irradiation. The phenomenon of strong re-adherence to the layer (2) to the point where it cannot be easily peeled off even by pushing up with a jig from the lower surface of the dicing tape and suction/lifting with a suction collet is greatly suppressed, making the die-bond film (3a) The semiconductor chip 30a can be favorably picked up from the adhesive layer 2 after irradiation of ultraviolet rays with the dicing tape 10.

In addition, the manufacturing method described in Figures 9 (a) to 9 (f) is an example (SDBG) of the manufacturing method of the semiconductor chip 30a using the dicing die bond film 20, and the dicing tape 10 The method used in the form of the dicing die bond film 20 is not limited to the above method. That is, the dicing die bond film 20 can be used without being limited to the above method as long as it is attached to the semiconductor wafer 30 during dicing.

Among them, the dicing tape 10 of the present invention is integrated with a wire-embedded die bond film in a manufacturing method for obtaining thin film semiconductor chips such as DBG, stealth dicing, SDBG, etc. to form a dicing die bond film 20. It is suitable as a dicing tape for use as a dicing tape. Of course, it is also possible to use it integrated with a general-purpose die bond film.

<Method for manufacturing semiconductor devices>

A semiconductor device equipped with a semiconductor chip manufactured using the dicing die bond film 20 that integrates the dicing tape 10 and the die bond film 3 to which this embodiment is applied will be described in detail below. do.

In the semiconductor device (semiconductor package), for example, the semiconductor chip 30a with the above-described die bond film (adhesive layer) 3a is bonded to a support member for mounting a semiconductor chip or a semiconductor chip by heat-pressing, and then , can be obtained by going through processes such as a wire bonding process and a sealing process with a sealing material.

Figure 12 shows a semiconductor in a stacked configuration with a semiconductor chip manufactured using a dicing die bond film 20 that integrates the dicing tape 10 and the wire embedded die bond film 3 to which this embodiment is applied. This is a schematic cross-sectional view of one aspect of the device. The semiconductor device 70 shown in FIG. 12 includes a support substrate 71 for mounting a semiconductor chip, cured die bond films (adhesive layers) 3a1 and 3a2, a first-level semiconductor chip 30a1, and a second-level semiconductor chip 30a1. It is provided with a semiconductor chip 30a2 and a sealing material 75. The support substrate 71 for mounting the semiconductor chip, the cured die bond film 3a1, and the semiconductor chip 30a1 constitute the support member 76 of the semiconductor chip 30a2.

A plurality of external connection terminals 72 are arranged on one side of the support substrate 71 for mounting a semiconductor chip, and a plurality of terminals 73 are arranged on the other side of the support substrate 71 for mounting a semiconductor chip. there is. The support substrate 71 for mounting the semiconductor chip has a wire 74 for electrically connecting the connection terminals (not shown) of the semiconductor chip 30a1 and the semiconductor chip 30a2 and the external connection terminal 72. . The semiconductor chip 30a1 is bonded to the support substrate 71 for mounting the semiconductor chip using a cured die bond film 3a1 in a manner that fills in the unevenness resulting from the external connection terminal 72. The semiconductor chip 30a2 is bonded to the semiconductor chip 30a1 by a hardened die bond film 3a2. The semiconductor chip 30a1, the semiconductor chip 30a2, and the wire 74 are sealed with a sealant 75. In this way, the wire-embedded die bond film 3a is suitably used in a semiconductor device having a stacked structure in which a plurality of semiconductor chips 30a are overlapped.

In addition, Figure 13 shows another semiconductor device equipped with a semiconductor chip manufactured using a dicing die bond film 20 that integrates the dicing tape 10 and the general-purpose die bond film 3 to which this embodiment is applied. This is a schematic cross-sectional view of one aspect of . The semiconductor device 80 shown in FIG. 13 includes a support substrate 81 for mounting a semiconductor chip, a cured die bond film 3a, a semiconductor chip 30a, and a sealing material 85. The support substrate 81 for mounting a semiconductor chip is a support member of the semiconductor chip 30a, and is attached to a connection terminal (not shown) of the semiconductor chip 30a and the main surface of the support substrate 81 for mounting a semiconductor chip. It has a wire 84 for electrically connecting the arranged external connection terminal (not shown). The semiconductor chip 30a is bonded to the support substrate 81 for mounting the semiconductor chip by a hardened die bond film 3a. The semiconductor chip 30a and the wire 7 are sealed with a sealing material 85.

[Example]

The present invention will be described in more detail through the following examples, but the present invention is not limited to these examples.

1. Production of base film (1)

The following resins were prepared as materials for producing base films 1(a) to 1(k).

(Thermoplastic crosslinked resin (A) consisting of an ionomer of ethylene-unsaturated carboxylic acid-based copolymer)

·Resin (IO1)

A terpolymer composed of ethylene/methacrylic acid/2-methyl-propyl acrylic acid at a mass ratio of 80/10/10, degree of neutralization by Zn ²⁺ ions: 60 mol%, melting point: 86°C, MFR: 1 g/ 10 minutes (190℃/2.16kg load), density: 0.96g/cm ³

·Resin (IO2)

A terpolymer composed of ethylene/methacrylic acid/2-methyl-propyl acrylic acid at a mass ratio of 80/10/10, degree of neutralization by Zn ²⁺ ions: 70 mol%, melting point: 87°C, MFR: 1 g/ 10 minutes (190℃/2.16kg load), density: 0.96g/cm ³

(polyamide resin (B))

·Resin (PA1)

Nylon 6, melting point: 225℃, density: 1.13g/cm ³

(Other Resins (C))

·Resin (TPO)

Thermoplastic polyolefin-based elastomer (ethylene-α-olefin random copolymer)

·Resin (POPE)

Polyolefin-polyether block copolymer (polymeric antistatic agent), melting point: 115℃, MFR: 15g/10min (190℃/2.16kg load)

·Resin (PP)

Random copolymerized polypropylene, melting point 138℃

·Resin (EVA)

Ethylene-vinyl acetate copolymer, vinyl acetate content 20% by mass, melting point 82°C, density: 0.94g/cm ³

(Base film 1(a))

(IO1) was prepared as a thermoplastic crosslinked resin (A) made of an ionomer, and (PA1) was prepared as a polyamide resin (B). First, the thermoplastic crosslinked resin (A) = (IO1) made of the ionomer and the polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A): (B) = 95:5. Next, the dry blended mixture was introduced into the resin inlet of the twin screw extruder and melt-kneaded at a die temperature of 230°C to obtain the resin composition for base film 1(a). The obtained resin composition was put into each extruder using a type 1 (same resin) 3-layer T-die film molding machine and molded under the conditions of a processing temperature of 240°C to obtain a 3-layer structure of the same resin composition with a thickness of 90 ㎛. Base film 1(a) was produced. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer 2)/2nd layer/3rd layer = 20 μm/50 μm/20 μm. The mass ratio of the total amount of the thermoplastic crosslinked resin (A) made of ionomer and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A):the total amount of (B) = 95:5.

(Base film 1(b))

Except that the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A): (B) = 90:10. , in the same manner as base film 1(a), base film 1(b) with a thickness of 90 μm having a three-layer structure using the same resin composition was produced. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer 2)/2nd layer/3rd layer = 20 μm/50 μm/20 μm. The mass ratio of the total amount of the thermoplastic crosslinked resin (A) made of ionomer and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A) : the total amount of (B) = 90:10.

(Base film 1(c))

Except that the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A): (B) = 85:15. , in the same manner as base film 1(a), base film 1(c) with a thickness of 90 μm having a three-layer structure using the same resin composition was produced. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer 2)/2nd layer/3rd layer = 20 μm/50 μm/20 μm. The mass ratio of the total amount of the thermoplastic crosslinked resin (A) made of ionomer and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A) : the total amount of (B) = 85:15.

(Base film 1(d))

Except that the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A): (B) = 80:20. , in the same manner as base film 1(a), base film 1(d) with a thickness of 90 μm having a three-layer structure using the same resin composition was produced. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer 2)/2nd layer/3rd layer = 20 μm/50 μm/20 μm. The mass ratio of the total amount of the thermoplastic crosslinked resin (A) made of ionomer and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A) : the total amount of (B) = 80:20.

(Base film 1(e))

Except that the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A): (B) = 72:28. , in the same manner as base film 1(a), base film 1(e) with a thickness of 90 μm having a three-layer structure using the same resin composition was produced. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer 2)/2nd layer/3rd layer = 20 μm/50 μm/20 μm. The mass ratio of the total amount of the thermoplastic crosslinked resin (A) made of ionomer and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A) : the total amount of (B) = 72:28.

(Base film 1(f))

(IO1) as the thermoplastic crosslinked resin (A) consisting of the above ionomer, (PA1) as the polyamide resin (B), and thermoplastic polyolefin-based elastomer-(ethylene-α-olefin random copolymer) (TPO) as the other resin (C). ) and polyolefin-polyether block copolymer (POPE) were prepared. First, as the resin for the first layer and the second layer, the thermoplastic crosslinked resin (A) = (IO1) made of the ionomer and the polyamide resin (B) = (PA1), (A): (B) = Dry blended at a mass ratio of 90:10. Next, the dry blended mixture was charged into the resin inlet of the twin screw extruder and melt-kneaded at a die temperature of 230°C to obtain the resin composition for the first and second layers of the base film 1(g). In addition, as the resin for the third layer, thermoplastic crosslinked resin (A) = (IO1) made of ionomer, polyamide resin (B) = (PA1), thermoplastic polyolefin elastomer (TPO), polyolefin-polyether block copolymer. (POPE) were dry blended at a mass ratio of 76:8:8:8, respectively. Next, the dry blended mixture was charged into the resin inlet of the twin screw extruder and melt-kneaded at a die temperature of 230°C to obtain a resin composition for the third layer of base film 1(f). Two types (two types of resins) of each resin composition and resin are put into each extruder using a three-layer T-die film molding machine and molded under the conditions of a processing temperature of 240°C, and the two types of resin compositions are used. Base film 1(f) with a three-layer structure and a thickness of 80 μm was produced. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer 2)/2nd layer/3rd layer = 30 μm/30 μm/20 μm. The mass ratio of the total amount of the thermoplastic crosslinked resin (A) made of ionomer and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A) : the total amount of (B) = 90:10. In addition, the content ratio of the total amount of resin (A) and resin (B) in the entire layer is 95% by mass.

(Base film 1(g))

(IO1) as the thermoplastic crosslinked resin (A) consisting of the above ionomer, (PA1) as the polyamide resin (B), and thermoplastic polyolefin-based elastomer-(ethylene-α-olefin random copolymer) (TPO) as the other resin (C). ) was prepared. First, as the resin for the first layer and the third layer, the thermoplastic crosslinked resin (A) = (IO1) made of the ionomer and the polyamide resin (B) = (PA1), (A): (B) = Dry blended at a mass ratio of 85:15. Next, the dry blended mixture was charged into the resin inlet of the twin screw extruder and melt-kneaded at a die temperature of 230°C to obtain resin compositions for the first and third layers of base film 1(g). Additionally, as the resin for the second layer, the thermoplastic polyolefin-based elastomer (ethylene-α-olefin random copolymer) = (TPO) was used alone. Two types (two types of resins) of each resin composition and resin are put into each extruder using a three-layer T-die film molding machine and molded under the conditions of a processing temperature of 240°C, and the two types of resin compositions are used. Base film 1(g) with a three-layer structure and a thickness of 90 μm was produced. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer 2)/2nd layer/3rd layer = 30 μm/30 μm/30 μm. The mass ratio of the total amount of the thermoplastic crosslinked resin (A) made of ionomer and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A) : the total amount of (B) = 85:15. In addition, the content ratio of the total amount of resin (A) and resin (B) in the entire layer is 67% by mass.

(Base film 1(h))

(IO1) and (IO2) were prepared as thermoplastic crosslinked resins (A) consisting of the above ionomer, and (PA1) as polyamide resin (B). First, as the resin for the first layer and the third layer, the thermoplastic crosslinked resin (A) = (IO1) made of the ionomer and the polyamide resin (B) = (PA1), (A): (B) = Dry blended at a mass ratio of 90:10. Next, the dry blended mixture was charged into the resin inlet of the twin screw extruder and melt-kneaded at a die temperature of 230°C to obtain resin compositions for the first and third layers of base film 1(h). Additionally, as the resin for the second layer, (IO2) was used alone as the thermoplastic crosslinked resin (A) consisting of the above-mentioned ionomer. Two types (two types of resins) of each resin composition and resin are put into each extruder using a three-layer T-die film molding machine and molded under the conditions of a processing temperature of 240°C, and the two types of resin compositions are used. Base film 1(g) with a three-layer structure and a thickness of 90 μm was produced. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer 2)/2nd layer/3rd layer = 30 μm/30 μm/30 μm. The mass ratio of the total amount of the thermoplastic crosslinked resin (A) made of ionomer and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A) : the total amount of (B) = 93:7.

(Base film 1(i))

(IO1) was prepared as resin (A) consisting of an ionomer. Polyamide resin (B) = Thickness of a three-layer structure made of the same resin composition (only the resin (A) made of ionomer) in the same manner as base film 1(a) except that (PA1) was not dry blended. Base film 1(i) of 90 μm was produced. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer 2)/2nd layer/3rd layer = 20 μm/50 μm/20 μm.

(Base film 1(j))

Except that the thickness of each layer of the base film 1 was set to 1st layer (surface side in contact with the adhesive layer 2)/2nd layer/3rd layer = 20㎛/50㎛/20㎛. In the same manner as 1(g), a base film 1(j) with a thickness of 90 μm having a three-layer structure made of two types of resin compositions was produced. The mass ratio of the total amount of the thermoplastic crosslinked resin (A) made of ionomer and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A) : the total amount of (B) = 90:10. In addition, the content ratio of the total amount of resin (A) and resin (B) in the entire layer is 44% by mass.

(Base film 1(k))

As other resins (C), (PP) and (EVA) were prepared. (PP) was used as the resin for the first layer and the third layer, and (EVA) was used as the resin for the second layer, and each resin was made of two types (two types of resin) using a three-layer T-die film molding machine. , were put into each extruder and molded under the conditions of a processing temperature of 150°C to produce a base film 1(k) with a thickness of 80 μm and a three-layer structure made of two types of resin compositions. The thickness of each layer was set to 1st layer (side in contact with the adhesive layer)/2nd layer/3rd layer = 8 μm/64 μm/8 μm.

[Elasticity modulus at 5% elongation of base film]

The elastic modulus (Y _MD ) upon 5% stretching in the MD direction and the elastic modulus (Y _TD ) upon 5% stretching in the TD direction at 0°C of the base film (1) were measured by the following methods. First, a test piece with a length of 100 mm (MD direction) and a width of 10 mm (TD direction) as a sample for MD direction measurement (number of samples N = 5), and a sample for TD direction measurement (number of samples N = 5). Test pieces with a length of 100 mm (TD direction) and a width of 10 mm (MD direction) were prepared. Subsequently, using a tensile compression tester manufactured by Minebea Mitsumi Co., Ltd. (Model: Minebea Techno Graph TG-5kN), both ends of the test piece in the longitudinal direction are fixed with chucks so that the initial distance between the chucks is 20 mm, and the test piece is tested with a Minebea Mitsumi Co., Ltd. tester. After leaving the product in a thermostat manufactured by Co., Ltd. (model: THB-A13-038) at 0°C for 1 minute, a tensile test was performed at a speed of 100 mm/min to measure the tensile load-elongation curve. And, from the obtained tensile load-elongation curve, the origin (elongation start point) and the tensile load value (unit: N) on the curve corresponding to 1.0 mm elongation from the origin (5% elongation with respect to the initial distance between the chucks of 20 mm) The slope of the straight line connecting the points was calculated, and the elastic modulus Y (unit: MPa) at 5% elongation was obtained using the formula described above. Measurements were made with the number of samples N = 5 in each direction, and the average values were taken as the elastic modulus at 5% elongation in the MD direction (Y _MD ) and the elastic modulus at 5% elongation in the TD direction (Y _TD ), respectively. Using these values, the average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0°C of the base film (1) formed above was calculated.

Average value of elastic modulus (Y _MD + Y _TD ) of the base films 1(a) to 1(k) used as the base film 1 of the dicing tape 10 of the examples and comparative examples at 5% elongation at 0°C /2 is as shown in Tables 1 to 9, respectively.

2. Preparation of solution of adhesive composition

As an adhesive composition for the adhesive layer 2 of the dicing tape 10, a solution of the following active energy ray-curable acrylic adhesive compositions 2(a) to 2(u) was prepared.

Additionally, as a copolymerized monomer component constituting the base polymer (acrylic acid ester copolymer) of these adhesive compositions,

·2-Ethylhexyl acrylic acid (2-EHA, molecular weight: 184.3, Tg: -70°C),

·2-Hydroxyethyl acrylic acid (2-HEA, molecular weight: 116.12, Tg: -15°C),

·Methacrylic acid (MAA, molecular weight: 86.06, Tg: 228℃)

prepared.

In addition, as a polyisocyanate-based crosslinking agent, Tosoh Co., Ltd.

TDI-based polyisocyanate crosslinking agent (brand name: Coronate L-45E, solid concentration: 45% by mass, isocyanate group content in solution: 8.05% by mass, isocyanate group content in solid content: 17.89% by mass, calculated number of isocyanate groups : Average 2.8 per molecule, theoretical molecular weight: 656.64),

HDI-based polyisocyanate crosslinking agent (brand name: Coronate HL, solid concentration: 75% by mass, isocyanate group content in solution: 12.8% by mass, isocyanate group content in solid content: 17.07% by mass, calculated number of isocyanate groups: average 2.6 pieces/1 molecule, theoretical molecular weight: 638.75)

prepared.

(Solution of active energy ray-curable acrylic adhesive composition 2(a))

As copolymerization monomer components, 2-ethylhexyl acrylate (2-EHA), 2-hydroxyethyl acrylate (2-HEA), and methyl methacrylate (MMA) were prepared. These copolymerization monomer components were mixed so that the copolymerization ratio was 2-EHA/2-HEA/MMA=81.5 parts by mass/17.5 parts by mass/1.0 parts by mass (=442.21 mmol/150.71 mmol/11.62 mmol), and ethyl acetate was used as a solvent. A solution of a base polymer (acrylic acid ester copolymer) having a hydroxyl group was synthesized by solution radical polymerization using azobisisobutyronitrile (AIBN) as an initiator. The Tg calculated from Fox's equation of the obtained base polymer is -61°C.

Next, with respect to 100 parts by mass of the solid content of this base polymer, an active energy ray reactive compound manufactured by Showa Electric Co., Ltd., 2-isocyanate ethyl meta having an isocyanate group and an active energy ray reactive carbon-carbon double bond manufactured by Showa Electric Co., Ltd. Mix 19.2 parts by mass (123.75 mmol: 82.11 mol% relative to 2-HEA) of crylate (product name: Karenz MOI, molecular weight: 155.15, isocyanate group: 1 unit/1 molecule, double bond group: 1 unit/1 molecule) , reacted with a portion of the hydroxyl group of 2-HEA to produce a solution of an acrylic adhesive polymer (A) having a carbon-carbon double bond in the side chain (solid concentration: 50% by mass, weight average molecular weight Mw: 330,000, solid hydroxyl value: 12.7 mgKOH/g, solid acid value: 5.5 mgKOH/g, carbon-carbon double bond content: 1.04 meq/g) was synthesized. In addition, in the above reaction, 0.05 parts by mass of hydroquinone monomethyl ether was used as a polymerization inhibitor to maintain the reactivity of the carbon-carbon double bond.

Subsequently, with respect to 200 parts by mass (100 parts by mass in terms of solid content) of the solution of the acrylic adhesive polymer (A) synthesized above, 4.0% α-hydroxyalkylphenone photopolymerization initiator (product name: Omnirad 184) manufactured by IGM Resins B.V. 0.8 parts by mass of a benzylmethylketal-based photopolymerization initiator (product name: Omnirad 651) manufactured by IGM Resins B.V., 1.0 parts by mass of an α-aminoalkylphenone-based photopolymerization initiator (brand name: Omnirad 379EG) manufactured by IGM Resins B.V., IGM 0.4 parts by mass of an acylphosphine oxide photopolymerization initiator (brand name: Omnirad 819) manufactured by Resins B.V., and as a crosslinking agent, an HDI-based polyisocyanate crosslinker manufactured by Tosoh Corporation (brand name: Coronate HL, solid content concentration: 75% by mass). It was mixed at a ratio of 5.5 parts by mass (4.1 parts by mass in terms of solid content, 7.65 mmol), diluted with ethyl acetate, and stirred to prepare a solution of active energy ray-curable acrylic adhesive composition 2(a) with a solid content concentration of 22% by mass. . As shown in Table 1, the equivalent ratio (NCO/OH) of the isocyanate group (NCO) of the polyisocyanate-based crosslinking agent and the hydroxyl group (OH) of the acrylic adhesive polymer in the active energy ray-curable acrylic adhesive composition 2(a). was 0.74, the residual hydroxyl group concentration was 0.06 mmol/g, and the carbon-carbon double bond concentration was 1.00 meq/g.

(Solution of active energy ray-curable acrylic adhesive compositions 2(b) to 2(u))

For the acrylic adhesive polymer (A), the copolymerization ratio of the copolymerization monomer component, the mixing amount of the active energy ray-reactive compound, and the copolymerization monomer component were appropriately changed as shown in Tables 4, 5, and 9, respectively, to obtain an acrylic adhesive polymer (B). Each solution of ~(G) was synthesized. The Tg, weight average molecular weight Mw, acid value, and hydroxyl value of the base polymer in the synthesized acrylic adhesive polymers (B) to (G) are as shown in Tables 4, 5, and 9, respectively. Subsequently, using the solution of these acrylic adhesive polymers, a photopolymerization initiator and polyisocyanate are added as shown in Tables 3 to 6, 8, and 9, respectively, with respect to 100 parts by mass in terms of solid content of the acrylic adhesive polymers (A) to (G). Solutions of active energy ray-curable acrylic adhesive compositions 2(b) to 2(u) were prepared by appropriately mixing the system crosslinking agent. Equivalence ratio (NCO/OH) between the isocyanate group (NCO) of the polyisocyanate-based crosslinking agent and the hydroxyl group (OH) of the acrylic adhesive polymer in the active energy ray-curable acrylic adhesive compositions 2(b) to 2(u), residual The hydroxyl group concentration and carbon-carbon double bond concentration are as shown in Tables 3 to 6, 8, and 9, respectively.

3. Preparation of solution of adhesive composition

As an adhesive composition for the die bond film (adhesive layer) 3 of the dicing die bond film 20, solutions of the following adhesive compositions 3(a) to 3(d) were prepared.

(Solution of adhesive composition 3(a))

For a wire-embedded die bond film, a solution of the following adhesive composition solution 3(a) was prepared and prepared. First, as a thermosetting resin, 26 parts by mass of a bisphenol-type epoxy resin manufactured by Printec Co., Ltd. (brand name: R2710, epoxy equivalent weight: 170, molecular weight: 340, liquid at room temperature), and a cresol novolak-type epoxy resin manufactured by Doto Kasei Co., Ltd. (brand name: YDCN) -700-10, epoxy equivalent weight 210, softening point 80°C) 36 parts by mass, phenol resin manufactured by Mitsui Chemicals Co., Ltd. as a crosslinker (brand name: Mirex XLC-LL, hydroxyl equivalent weight: 175, softening point: 77°C, water absorption: 1% by mass , heating mass reduction rate: 4 mass%) 1 mass part, phenol resin manufactured by Air Water Co., Ltd. (brand name: HE200C-10, hydroxyl equivalent: 200, softening point: 71°C, water absorption: 1 mass%, heating mass reduction rate: 4 mass. %) 25 parts by mass, phenol resin manufactured by Air Water Co., Ltd. (brand name: HE910-10, hydroxyl equivalent: 101, softening point: 83°C, water absorption: 1 mass%, heating mass reduction rate: 3 mass%) 12 mass parts, inorganic As a filler, 15 parts by mass of a silica filler dispersion liquid manufactured by Admatex Co., Ltd. (brand name: SC2050-HLG, average particle diameter: 0.50 μm), a silica filler dispersion liquid manufactured by Admatex Corporation (brand name: SC1030-HJA, average particle diameter: 0.25 μm) To a resin composition consisting of 14 parts by mass and 1 part by mass of silica (brand name: Aerosil R972, average particle diameter: 0.016 μm) manufactured by Nippon Aerosil Co., Ltd., cyclohexanone was added as a solvent, stirred and mixed, and further using a bead mill. Dispersed for 90 minutes.

Next, the above-mentioned resin composition was mixed with 37 parts by mass of a glycidyl group-containing (meth)acrylic acid ester copolymer having a low weight average molecular weight Mw as a thermoplastic resin, and 9 parts by mass of a glycidyl group-containing (meth)acrylic acid ester copolymer having a high weight average molecular weight Mw. Part, 0.7 parts by mass of γ-ureidopropyltriethoxysilane manufactured by GE Toshiba Corporation (brand name: NUC A-1160) as a silane coupling agent, γ-ureidopropyltriethoxysilane manufactured by GE Toshiba Corporation (brand name: NUC) A-189) 0.3 parts by mass and 0.03 parts by mass of 1-cyanoethyl-2-phenylimidazole (brand name: Qazole 2PZ-CN) manufactured by Shikoku Kasei Co., Ltd. as a curing accelerator were added, stirred and mixed, and a 100-mesh solution was added. After filtration with a filter, vacuum degassing was performed to prepare a solution of adhesive composition 3(a) with a solid content concentration of 20% by mass. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinking agent) is glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 31.5 mass%: 42.5 mass. %: It was 26.0 mass%. Additionally, the content of the inorganic filler was 20.5% by mass based on the total amount of resin components.

(Solution of adhesive composition 3(b))

For a wire-embedded die bond film, a solution of the following adhesive composition solution 3(b) was prepared and prepared. First, as a thermosetting resin, 21 parts by mass of bisphenol F-type epoxy resin manufactured by Doto Kasei Corporation (brand name: YDF-8170C, epoxy equivalent weight: 159, molecular weight: 310, liquid at room temperature), and a cresol novolak-type epoxy resin manufactured by Doto Kasei Corporation. (Product name: YDCN-700-10, epoxy equivalent weight: 210, softening point: 80°C) 33 parts by mass, phenolic resin manufactured by Air Water Co., Ltd. as a crosslinking agent (brand name: HE200C-10, hydroxyl equivalent weight: 200, softening point: 71°C, water absorption: 1 mass %, heating mass reduction rate: 4 mass %) 46 mass parts, and a silica filler dispersion liquid manufactured by Admatex Co., Ltd. as an inorganic filler (brand name: SC1030-HJA, average particle diameter: 0.25 μm) to a resin composition consisting of 18 mass parts, solvent. Cyclohexanone was added, stirred and mixed, and further dispersed using a bead mill for 90 minutes.

Next, the above-mentioned resin composition was mixed with 16 parts by mass of a glycidyl group-containing (meth)acrylic acid ester copolymer having a low weight average molecular weight Mw as a thermoplastic resin, and 64 parts by mass of a glycidyl group-containing (meth)acrylic acid ester copolymer having a high weight average molecular weight Mw. Part, 1.3 parts by mass of γ-ureidopropyltriethoxysilane manufactured by GE Toshiba Corporation (brand name: NUC A-1160) as a silane coupling agent, γ-ureidopropyltriethoxysilane manufactured by GE Toshiba Corporation (brand name: NUC) A-189) 0.6 parts by mass and 0.05 parts by mass of 1-cyanoethyl-2-phenylimidazole (brand name: Qazole 2PZ-CN) manufactured by Shikoku Kasei Co., Ltd. as a curing accelerator were added, stirred and mixed, and a 100-mesh solution was added. After filtration with a filter, vacuum degassing was performed to prepare a solution of adhesive composition 3(b) with a solid content concentration of 20% by mass. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinking agent) is glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 44.4 mass%: 30.0 mass. %: It was 25.6 mass%. Additionally, the content of the inorganic filler was 10.0% by mass based on the total amount of resin components.

(Solution of adhesive composition 3(c))

For a wire-embedded die bond film, a solution of the following adhesive composition solution 3(c) was prepared and prepared. First, as thermosetting resins, 11 parts by mass of bisphenol-type epoxy resin manufactured by Printech Co., Ltd. (brand name: R2710, epoxy equivalent weight: 170, molecular weight: 340, liquid at room temperature), and dicyclopentadiene-type epoxy resin manufactured by DIC Corporation (brand name: HP-7200H, epoxy equivalent weight 280, softening point 83°C) 40 parts by mass, bisphenol S type epoxy resin manufactured by DIC Corporation (brand name: EXA-1514, epoxy equivalent weight 300, softening point 75°C) 18 parts by mass manufactured by Mitsui Chemicals Corporation as a crosslinking agent 1 part by mass of phenol resin (brand name: Mirex : HE200C-10, hydroxyl equivalent: 200, softening point: 71°C, water absorption: 1 mass%, heating mass reduction rate: 4 mass%) 20 parts by mass, phenolic resin manufactured by Air Water Co., Ltd. (Product name: HE910-10, hydroxyl equivalent) : 101, softening point: 83°C, water absorption: 1% by mass, heating mass reduction rate: 3% by mass) 10 parts by mass, silica filler dispersion as an inorganic filler manufactured by Admatex Co., Ltd. (product name: SC1030-HJA, average particle diameter: 0.25㎛) ) Cyclohexanone was added as a solvent to a resin composition consisting of 24 parts by mass and 0.8 parts by mass of silica manufactured by Nippon Aerosil Co., Ltd. (Product name: Aerosil R972, average particle diameter: 0.016 μm), stirred and mixed, and further used a bead mill. and dispersed for 90 minutes.

Next, to the above resin composition, 30 parts by mass of a glycidyl group-containing (meth)acrylic acid ester copolymer with a low weight average molecular weight Mw as a thermoplastic resin, and 7.5 parts by mass of a glycidyl group-containing (meth)acrylic acid ester copolymer with a high weight average molecular weight Mw. Part, 0.57 parts by mass of γ-ureidopropyltriethoxysilane manufactured by GE Toshiba Corporation (brand name: NUC A-1160) as a silane coupling agent, γ-ureidopropyltriethoxysilane manufactured by GE Toshiba Corporation (brand name: NUC) A-189) 0.29 parts by mass and 0.023 parts by mass of 1-cyanoethyl-2-phenylimidazole (brand name: Qazole 2PZ-CN) manufactured by Shikoku Kasei Co., Ltd. as a curing accelerator were added, stirred and mixed, and a 100-mesh solution was added. After filtration with a filter, vacuum degassing was performed to prepare a solution of adhesive composition 3(c) with a solid content concentration of 20% by mass. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinking agent) is glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 27.3 mass%: 50.2 mass. %: It was 22.5 mass%. Additionally, the content of the inorganic filler was 18.0% by mass based on the total amount of resin components.

(Solution of adhesive composition 3(d))

For a general-purpose die-bond film, a solution of the following adhesive composition 3(d) was prepared and prepared. First, as a thermosetting resin, 54 parts by mass of a cresol novolak-type epoxy resin manufactured by Doto Kasei Co., Ltd. (Product name: YDCN-700-10, epoxy equivalent weight 210, softening point 80°C), and as a crosslinking agent, a phenol resin manufactured by Mitsui Chemicals Co., Ltd. (Product name: Mi) A resin composition consisting of 46 parts by mass of Rex Cyclohexanone was added, stirred and mixed, and further dispersed using a bead mill for 90 minutes.

Next, to the above resin composition, 274 parts by mass of a (meth)acrylic acid ester copolymer containing a glycidyl group as a thermoplastic resin, and γ-ureidopropyltriethoxysilane (product name: NUC A-1160) manufactured by GE Toshiba Corporation as a silane coupling agent. ) 5.0 parts by mass, 1.7 parts by mass of γ-ureidopropyltriethoxysilane (brand name: NUC A-189) manufactured by GE Toshiba Corporation, and 1-cyanoethyl-2-phenyl manufactured by Shikoku Kasei Corporation as a curing accelerator. 0.1 part by mass of midazole (brand name: Qazole 2PZ-CN) was added, mixed with stirring, filtered through a 100 mesh filter, and vacuum deaerated to prepare a solution of adhesive composition 3(d) with a solid content concentration of 20% by mass. . The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinking agent) is glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 73.3 mass%: 14.4 mass%. %: It was 12.3% by mass. Additionally, the content of inorganic filler was 8.6% by mass based on the total amount of resin components.

4. Production of dicing tape (10) and dicing die bond film (20)

(Example 1)

The solution of the above-described active energy ray-curable acrylic adhesive composition (a) is applied to the release treatment side of the release liner (thickness 38 μm, polyethylene terephthalate film) so that the thickness of the adhesive layer 2 after drying is 8 μm, and heated at 100°C. After drying the solvent by heating at a temperature for 3 minutes, the surface of the first layer side of the base film 1(a) was bonded onto the adhesive layer 2 to produce the fabric of the dicing tape 10. Afterwards, the fabric of the dicing tape 10 was stored at a temperature of 23°C for 96 hours to crosslink and cure the adhesive layer 2.

Next, a solution of adhesive composition 3(a) for forming a die bond film (adhesive layer) 3 was prepared, and a dried die bond film ( The solution of the adhesive composition 3(a) was applied so that the thickness of the adhesive layer (3) was 50 μm, and heated in two stages, first at a temperature of 90°C for 5 minutes and then at a temperature of 140°C for 5 minutes. By doing so, the solvent was dried, and a die bond film (adhesive layer) 3 provided with a release liner was produced. Additionally, if necessary, a protective film (for example, polyethylene film, etc.) may be bonded to the dry surface side of the die bond film (adhesive layer) 3.

Subsequently, the die bond film (adhesive layer) 3 with the release liner produced above was cut into a circle with a diameter of 335 mm using the release liner alone, and the adhesive of the die bond film (adhesive layer) 3 was applied. The exposed layer surface (the side without the release liner) was bonded to the adhesive layer (2) side of the dicing tape (10) from which the release liner had been peeled. The bonding conditions were 23°C, 10 mm/sec, and linear pressure of 30 kgf/cm.

Finally, by cutting the dicing tape 10 into a circular shape with a diameter of 370 mm, a circular die bond film with a diameter of 335 mm is formed on the upper center of the adhesive layer 2 of the circular dicing tape 10 with a diameter of 370 mm ( A dicing die bond film (20) (DDF (a)) on which an adhesive layer (3) was laminated was produced.

(Examples 2 to 8)

The dicing die bond film 20 (DDF(b) was prepared in the same manner as in Example 1 except that the base film 1(a) was changed to the base films 1(b) to 1(h) shown in Tables 1 to 2, respectively. )~DDF(h)) was produced.

(Examples 9 to 23)

Example 2 except that the solution of the active energy ray-curable acrylic adhesive composition 2(a) was changed to the solution of the active energy ray-curable acrylic adhesive compositions 2(b) to 2(p) shown in Tables 3 to 6, respectively. In the same manner as above, dicing die bond films 20 (DDF(i) to DDF(w)) were produced.

(Example 24)

Everything was the same as in Example 2, except that the solution of adhesive composition 3(a) was changed to a solution of adhesive composition 3(b), and the thickness of the dried die bond film (adhesive layer) 3 was changed to 30 μm. Thus, dicing die bond film 20 (DDF(x)) was produced.

(Example 25)

A dicing die bond film 20 (DDF(y)) was produced in the same manner as in Example 2 except that the solution of adhesive composition 3(a) was changed to the solution of adhesive composition 3(c).

(Example 26)

Everything was the same as in Example 2, except that the solution of adhesive composition 3(a) was changed to the solution of adhesive composition 3(d), and the thickness of the die bond film (adhesive layer) 3 after drying was changed to 20 μm. Thus, dicing die bond film 20 (DDF(z)) was produced.

(Comparative Example 1)

Base film 1(a) was changed to base film 1(i), and the solution of active energy ray-curable acrylic adhesive composition 2(a) was changed to a solution of active energy ray-curable acrylic adhesive composition 2(q) shown in Table 8. A dicing die bond film 20 (DDF(aa)) was produced in the same manner as in Example 1 except that the solution of adhesive composition 3(a) was changed to the solution of adhesive composition 3(c).

(Comparative Example 2)

Dicing was carried out in the same manner as in Comparative Example 1 except that base film 1(a) was changed to base film 1(j) and the solution of adhesive resin composition 3(c) was changed to a solution of adhesive composition 3(a). Die bond film 20 (DDF(bb)) was produced.

(Comparative Example 3)

Dicing die bond film 20 (DDF(cc)) was produced in the same manner as in Comparative Example 2 except that base film 1(a) was changed to base film 1(k).

(Comparative Example 4)

A dicing die bond film ( 20) (DDF(dd)) was produced.

(Comparative Examples 5 to 7)

Everything was the same as in Example 2 except that the solution of the active energy ray-curable acrylic adhesive composition 2(a) was changed to the solution of the active energy ray-curable acrylic adhesive compositions 2(s) to 2(u) shown in Table 9, respectively. Thus, dicing die bond film 20 (DDF(ee)~DDF(gg)) was produced.

5. Measurement of adhesion of dicing tape and shear viscosity of die bond film after UV irradiation

The adhesive force of the dicing tapes 10 produced in Examples 1 to 26 and Comparative Examples 1 to 7 after irradiation with ultraviolet rays and the shear viscosity of the die bond film 3 were measured by the methods shown below.

5.1 Adhesion of the adhesive layer (2) of the dicing tape (10) after irradiation with aerobic ultraviolet rays and adhesion of the adhesive layer (2) of the dicing tape (10) to the die bond film (adhesive layer) (3) after irradiation with oxygen-free ultraviolet rays. measurement of

For the dicing tapes 10 manufactured in Examples 1 to 26 and Comparative Examples 1 to 7, the adhesive strength A after irradiation with ultraviolet rays under aerobic conditions and the adhesive strength after irradiation with ultraviolet rays under anoxic conditions of the adhesive layer 2 were determined by the following method. B was measured.

5.1.1 Adhesion A after aerobic UV irradiation

First, the dicing tape 10 was cut to a size of 25 mm in width (TD direction of the base film 1) and 120 mm in length (MD direction of the base film 1). Next, ultraviolet rays (UV) with a central wavelength of 367 nm are irradiated from the adhesive layer 2 side of the dicing tape 10 from which the release liner has been removed using a metal halide lamp (irradiation intensity: 70 mW/cm ² , integrated light amount: 150 mJ/cm ² ), then roll the dicing tape (10) onto a stainless steel plate (SUS304/BA plate) from the edge of the adhesive layer (2) using a rubber roller weighing 2 kg, at a temperature of 23°C and a humidity of 50°C. In an environment of %RH, the rubber roller was made to reciprocate once at a speed of about 5 mm/sec, and neatly pressed and bonded, thereby forming a test piece for measurement. After standing for 20 minutes, the test piece was attached to a stainless steel plate (SUS304/BA plate) using an adhesion/film peeling analyzer of the peeling angle flexible type shown in FIG. 4 in an environment of temperature 23°C and humidity 50% RH. The adhesive force (unit: N/25 mm) of the dicing tape 10 at a peeling angle of 90° was measured. The peeling speed was 300 mm/min. The measurement was performed on three test pieces, and the average value of the values of the three samples was taken as the adhesive force A of the dicing tape 10 after irradiation with ultraviolet rays under aerobic conditions.

5.1.2 Adhesion B after irradiation with UV rays in the absence of oxygen

First, the dicing tape 10 was cut to a size of 25 mm in width (TD direction of the base film 1) and 120 mm in length (MD direction of the base film 1). Next, a stainless steel plate (SUS304·BA plate) is applied from the edge of the adhesive layer 2 side of the dicing tape 10 from which the release liner has been peeled off using a rubber roller weighing 2 kg at a temperature of 23°C and a humidity of 50% RH. In the environment, the rubber roller was reciprocated once at a speed of about 5 mm/sec, and neatly pressed and bonded. After standing for 20 minutes, ultraviolet rays (UV) with a central wavelength of 367 nm are irradiated from the base film 1 side of the dicing tape 10 using a metal halide lamp (irradiation intensity: 70 mW/cm ² , integrated light amount: 150mJ/cm ² ) was used as a test piece for measurement. For the test piece, dicing was performed on a stainless steel plate (SUS304/BA plate) using an adhesion/film peeling analyzer of the peeling angle flexible type shown in FIG. 4, similar to the measurement of adhesive force A after aerobic ultraviolet irradiation described above. The adhesive force (unit: N/25 mm) of the tape 10 at a peeling angle of 90° was measured. The peeling speed was 300 mm/min. The measurement was performed on three test pieces, and the average value of the values of the three samples was taken as the adhesive force B of the dicing tape 10 after irradiation with ultraviolet rays under oxygen-free conditions.

In addition, using the above measured value of adhesive force, the ratio A/B of the adhesive force A after irradiation of ultraviolet rays under aerobic energy to the adhesive force B of the adhesive layer 2 of the dicing tape 10 after irradiation with ultraviolet rays under anoxic conditions was calculated.

5.2 Measurement of shear viscosity at 80°C of die bond film (adhesive layer) (3)

For each die bond film (adhesive layer) 3 formed from a solution of adhesive compositions 3(a) to 3(d), the shear viscosity at 80°C was measured by the following method.

A laminate was produced by bonding multiple die bond films (adhesive layer) 3 from which the release liner was removed at 70°C so that the total thickness was 200 to 210 μm. Next, the laminate was punched in the thickness direction to a size of 10 mm x 10 mm to serve as a measurement sample. Subsequently, a circular aluminum plate jig with a diameter of 8 mm was mounted using a dynamic viscoelastic device ARES (manufactured by Rheometric Scientific), and then a measurement sample was set. While applying a 5% strain to the measurement sample at 35°C, the shear viscosity was measured while heating the measurement sample at a temperature increase rate of 5°C/min, and the value of the shear viscosity at 80°C was obtained.

With respect to the dicing tape 10 and the dicing die bond film 20 produced in Examples 1 to 26 and Comparative Examples 1 to 7, the respective configurations and the above measurement results are shown in Tables 1 to 9.

6. Mounting evaluation of dicing tape

Regarding the dicing tapes 10 produced in Examples 1 to 26 and Comparative Examples 1 to 7, the dicing die bond films 20 (DDF(a) to DDF(gg)) are shown below. The evaluation was carried out using the following method.

6.1 Die bond film (adhesive layer) cleavability

First, a semiconductor wafer (silicon mirror wafer, thickness 750 μm, outer diameter 12 inches) (W) was prepared, and a commercially available back grinding tape was attached to one side. Next, from the side opposite to the side on which the back grinding tape was attached to the semiconductor wafer W, a Stealth Dicing Laser Saw (device name: DFL7361) manufactured by Disco Co., Ltd. was used, and the size of the semiconductor chip 30a after cutting was 4.6 mm. The modified region 30b was formed at a position of a predetermined depth on the semiconductor wafer W by irradiating laser light under the following conditions along the grid-shaped dicing line to a size of ×7.2 mm.

·Laser irradiation conditions

(1) Laser oscillator type: semiconductor laser excitation Q-switched solid-state laser

(2) Wavelength: 1342㎚

(3) Oscillation format: pulse

(4) Frequency: 90kHz

(5) Output: 1.7W

(6) Movement speed of semiconductor wafer stand: 700 mm/sec

Next, using a back-grinding device (equipment name: DGP 8761) manufactured by Disco Co., Ltd., the semiconductor wafer (W) with a thickness of 750 ㎛ formed with the modified region 30b held on the back-grinding tape is ground and thinned to a thickness of 30. A ㎛ segmented semiconductor chip (30a) was obtained. Subsequently, the die bond film (adhesive layer) cleavability was evaluated by performing a cool expand process using the following method. Specifically, by peeling the release liner from the dicing die bond film 20 produced in each example and comparative example on the side opposite to the side to which the back grinding tape of the semiconductor chip 30a with a thickness of 30 μm was attached. Using a laminating device (equipment name: DFM2800) manufactured by Disco Co., Ltd., the dicing die bond film 20 was laminated to the semiconductor chip 30a at a laminating temperature of 70°C so that the exposed die bond film 3 adheres closely. After bonding at a speed of 10 mm/sec and attaching a ring frame (wafer ring) 40 to the exposed portion of the adhesive layer 2 at the edge of the dicing tape 10, the back grinding tape was peeled off. In addition, here, the dicing die bond film 20 is aligned with the MD direction of the base film 1 and the vertical line direction of the lattice-shaped dividing lines of the semiconductor chip 30a (the TD direction of the base film 1 and the semiconductor chip 30a). It is attached to the semiconductor chip 30a so that the horizontal line direction of the lattice-shaped division lines of the chip 30a matches.

A laminate (semiconductor wafer 30/die bond film 3/adhesive layer 2/base film 1) including the semiconductor chip 30a held on the ring frame (wafer ring) 40. It was fixed to an expand device (device name: DDS2300 Fully Automatic Die Separator) manufactured by Disco Co., Ltd. Next, under the following conditions, the dicing tape 10 (adhesive layer 2/base film 1) of the dicing die bond film 20 accompanying the semiconductor chip 30a is cool expanded, thereby Bond film (3) was cut. Accordingly, a semiconductor chip 30a with a die bond film (adhesive layer) 3 was obtained. In addition, in this example, the cool expand process was performed under the following conditions, but the expand conditions (“expand speed” and “expand amount”, etc.) were adjusted appropriately depending on the physical properties and temperature conditions of the base film 1. After adjusting, perform the cool expand process.

·Conditions of cool expand process

Temperature: -15℃, Cooling time: 80 seconds,

Expand speed: 300 mm/sec,

Expand amount: 11㎜,

(4) Waiting time: 0 seconds

The die bond film (adhesive layer) 3 after cool expansion was observed from the surface side of the semiconductor chip 30a using an optical microscope (model: VHX-1000) manufactured by Keyence Co., Ltd. at a magnification of 200x. Among the sides scheduled to be divided, the number of sides that were not divided was measured. Then, from the total number of sides scheduled to be divided and the total number of sides not divided, the ratio of the number of sides divided to the total number of sides scheduled to be divided was calculated as the installment rate (%). The observation using the optical microscope was performed on the entire number of semiconductor chips 30a equipped with the die bond film 3a. The cleavage properties of the die bond film (adhesive layer) 3 were evaluated according to the following criteria, and an evaluation of B or higher was judged to indicate good cleavage properties.

A: The installment rate was between 95% and 100%.

B: The installment rate was 90% or more and less than 95%.

C: The installment rate was 85% or more and less than 90%.

D: The installment rate was less than 85%.

6.2 Confirmation of peeling of the edge portion of the die-bond film and calculation of the ratio of the area S1 of the edge portion of the die-bond film peeled from the adhesive layer

After canceling the cool expand state, an expand device (device name: DDS2300 Fully Automatic Die Separator) manufactured by Disco Co., Ltd. is used again, and a room temperature expand process is performed using the heat expand unit under the following conditions. carried out.

·Conditions of room temperature expand process

Temperature: 23℃,

Expand speed: 30 mm/sec,

Expand amount: 9㎜,

(4) Waiting time: 15 seconds

Next, the dicing tape 10 was adsorbed to the suction table while maintaining the expanded state, and the suction table was lowered together with the work while maintaining suction by the suction table. Then, a heat shrinking process was performed under the following conditions to heat shrink (heat shrink) the circumferential portion of the dicing tape 10 outside the holding area of the semiconductor chip 30a.

·Conditions of heat shrink process

Hot air temperature: 200℃,

Air volume: 40L/min,

Distance between hot air outlet and dicing tape (10): 20 mm,

Rotation speed of stage: 7°/sec

Subsequently, after releasing the dicing tape 10 from adsorption by the suction table, a die bond film (adhesive layer) 3 is attached to the dicing tape 10 around all sides of each cut semiconductor chip. The state peeled from the adhesive layer 2 was examined from the back side (base film 1 side) of the semiconductor chip 30a using an optical microscope (model: VHX-1000) manufactured by Keyence Co., Ltd. at a magnification of 50x. observed. Since the state of peeling of the die bond film (adhesive layer) 3 was observed to be approximately the same at any position of the semiconductor chip 30a, the presence or absence of peeling was confirmed at the center of the semiconductor wafer 30. This was performed on a predetermined number of 20 semiconductor chips 30a provided with the die bond film 3a. In addition, calculation of the ratio of the area S1 was performed by the following method. First, three are randomly selected from among the 20 semiconductor chips 30a equipped with the die bond film 3a, and the images observed for each are processed using the image processing software “Image J” (https://imagej.Nih. (available from gov/ij/), the portion corresponding to the area S1 and the portion corresponding to the area S2 were binarized. According to the binarized image processing image, the edge of the small piece of die bond film 3a peeled off from the adhesive layer 2 relative to the entire area (=S1+S2) of the small piece of die bond film 3a. The ratio of the area S1 of the part was determined as the average value of three measurements.

6.3 Pickup

Irradiation intensity: 70 mW/ An evaluation sample was produced by curing the adhesive layer 2 by irradiating ultraviolet rays (UV) with a central wavelength of 367 nm so that the integrated light amount per cm ² was 150 mJ/cm ² .

Subsequently, a pickup test of the semiconductor chip 30a with the die bond film 3a was performed using a device (device name: Die Bonder DB-830P) having a pickup mechanism manufactured by Fasford Technology Co., Ltd. (formerly Hitachi High Technologies Co., Ltd.). was done. The size of the collet for pickup is 4.5 ㎛, 200㎛ and 150㎛ were set. The number of samples in the pickup try was set to 20 individually divided chips (chips) at a predetermined position, and these were picked up continuously, and the number of successful pickups was counted. The pick-up performance of the semiconductor chip 30a with the die bond film 3a at each pushing height was evaluated according to the following standards.

A: 20 chips were picked up in succession, and the number of chips without chip cracks or pickup misses (the number of successful pickups) was 19 to 20 (success rate 95% to 100%).

B: 20 chips were picked up in succession, and the number of chips without chip cracks or pickup misses (number of successful pickups) was 17 to 19 (success rate 85% to 95%).

C: 20 chips were picked up in succession, and the number of chips without chip cracks or pickup misses (number of successful pickups) was less than 17 (success rate less than 85%).

As a comprehensive evaluation of the above pickup test, the evaluation of the number of successful pickups of the semiconductor chip 30a with the die bond film 3a is A or B. The smaller the amount of the push-up height of the push-up pin, the smaller the dicing tape. It was judged that the pickup performance was better when (10) was used.

6.3. Evaluation results

Results of mounting evaluation of each dicing tape 10 produced in Examples 1 to 26 and Comparative Examples 1 to 7 in the form of dicing die bond film 20 (DDF(a) to DDF(gg)) are shown in Tables 10 to 18.

As shown in Tables 10 to 16, an adhesive layer (2) containing base films 1(a) to 1(h) and adhesive compositions 2(a) to 2(p) that meet the requirements of the present invention is provided, , In addition, the dicing die bond films of Examples 1 to 26 produced using the dicing tape (10) that satisfies the requirements of adhesive strength A after irradiation of ultraviolet rays under aerobic conditions and adhesive strength B after irradiation of ultraviolet rays under anoxic conditions of the adhesive layer (2). (20) (DDF(a) to DDF(z)), when used in the manufacturing process of a semiconductor device, the die bond film 3 is well cleaved by cool expand, and the cleaved die bond film In (3a), a state is formed in which the edge portion (peripheral portion on all sides) is appropriately peeled from the adhesive layer 2 of the dicing tape 10, and the adhesive force A is significantly reduced after irradiation with ultraviolet rays under aerobic radiation. As a result, during pickup, the edge portion of the die-bond film 3 that has been peeled off from the adhesive layer is significantly re-adhered to the adhesive layer 2 after irradiation with ultraviolet rays from the dicing tape 10. It was confirmed that the peeling of the semiconductor chip 30a with the dicing die bond film 3a from the adhesive layer 2 by pushing up proceeds smoothly from the edge portion, and a desirable result is obtained in the evaluation of pick-up performance. It has been done.

When comparing the examples in detail, the dicing dies of Examples 2 to 4, Example 6, Example 8, Examples 10 and 11, Examples 14 to 16, Examples 21, 22 and Examples 24 to 26 Regarding the bond film 20, it was found to be compatible at a high level in the evaluation of the splitting properties and pick-up properties of the die bond film 3 and to be particularly excellent. That is, the cleavage rate of the die bond film 3 in the cool expand process was very good, and the yield in the pickup test in which the amount of the push-up height of the push-up pin was small was also very good.

The dicing die bond films 20 of Examples 1 and 7 have an average value of elastic modulus (Y Since _MD +Y _TD )/2 is close to the lower limit of the range of the present invention, compared to the dicing die bond film 20 of Examples 2 to 4, Example 6, and Example 8, the die bond film (3) )'s splitting and pick-up properties were slightly inferior. On the other hand, the dicing die bond film 20 of Example 5 has an average value of elasticity when stretched by 5% in the MD and TD directions at 0°C of the base film 1(e) (Y _MD + Y _TD )/2 However, because it was close to the upper limit of the range of the present invention, the pickup performance was slightly inferior compared to the dicing die bond film 20 of Examples 2 to 4, Example 6, and Example 8.

The dicing die bond films 20 of Example 9 and Example 18 have a hydroxyl value of the acrylic adhesive polymer (A) of adhesive composition 2(a) close to the lower limit of the range of the present invention, and also have a polyisocyanate-based Since the amount of crosslinking agent added is also the lower limit of the range of the present invention, compared to the dicing die bond film 20 of Example 2, Examples 10, and 11, small pieces peeled off from the adhesive layer 2 during cool expand. The ratio of the area S1 of the edge portion (slanted portion) of the die bond film 3a was slightly small, that is, the contribution of the effect of reducing the adhesive force after aerobic ultraviolet irradiation was small, and the pickup performance was slightly inferior.

In the dicing die bond films 20 of Examples 12, 17, and 19, the hydroxyl value of the acrylic adhesive polymer (A) of adhesive composition 2(a) is close to the lower limit of the range of the present invention, and , the addition amount of the polyisocyanate-based crosslinking agent is also close to or is the upper limit of the range of the present invention, and the addition amount of the polyisocyanate-based crosslinking agent in the adhesive composition 2(a) and the isocyanate group (-NCO) possessed by the polyisocyanate-based crosslinking agent Since the equivalence ratio (-NCO/-OH) of the hydroxyl group (-OH) of the acrylic adhesive polymer is also close to the upper limit of the range of the present invention, the dicing die bond film 20 of Examples 2, 10, and 11 In comparison, the ratio of the area S1 of the edge portion (slanted portion) of the small piece of die bond film 3a peeled off from the adhesive layer 2 during cool expand is slightly larger, and the adhesive force reduction effect after aerobic ultraviolet irradiation is slightly larger. was gradually suppressed due to the influence of an increase in the reattachment area, and the pickup performance was slightly inferior. In addition, the dicing die bond films 20 of Examples 12 and 19 were slightly inferior in the cutting properties of the die bond film 3.

In the dicing die bond film 20 of Example 13, the hydroxyl value of the acrylic adhesive polymer (A) of adhesive composition 2(a) is close to the lower limit of the range of the present invention, and the addition amount of the polyisocyanate-based crosslinking agent is also This is the lower limit of the range of the present invention, and compared to the dicing die bond film 20 of Example 2 and Examples 14 to 17, a small piece of die bond film peeled off from the adhesive layer 2 during cool expand ( The ratio of the area S1 of the edge portion (slanted line portion) in 3a) was slightly small, that is, the contribution of the effect of reducing the adhesive force after aerobic ultraviolet irradiation was small, and the pickup performance was slightly inferior.

The dicing die bond films 20 of Examples 20 and 23 have adhesive forces close to the upper limit of the range of the present invention after irradiation with ultraviolet rays under aerobic conditions, and the dicing die bond films 20 of Examples 2, 21, and 22 Compared to , pickup performance was slightly inferior.

In contrast, as shown in Tables 17 and 18, at least one of the characteristics of the base film (1) and the adhesive composition and the requirements for adhesive force A after irradiation with ultraviolet rays under aerobic conditions and adhesive force B after irradiation with ultraviolet rays under anoxic conditions for the adhesive layer (2) Regarding the dicing die bond films 20 (DDF(aa) to DDF(gg)) of Comparative Examples 1 to 7 produced using the dicing tape 10 that did not satisfy the The die bond film 3 is inferior to the dicing die bond film 20 (DDF(a) to DDF(z)) of Examples 1 to 26 in any of the evaluation items of cleavage property and pickup property in the pickup process. It was confirmed that the result was falling.

Specifically, with respect to the dicing die bond film 20 (DDF(aa)) of Comparative Example 1, the MD and TD directions at 0° C. of the base film 1(i) of the dicing tape 10 The average value of elastic modulus at 5% elongation (Y _MD + Y _TD )/2, the amount of polyisocyanate crosslinking agent added in adhesive composition 2(q), and the isocyanate group (-NCO) of the polyisocyanate crosslinking agent and the acrylic adhesive polymer. Since the equivalence ratio (-NCO/-OH) with the hydroxyl group (-OH) is below the lower limit of the range of the present invention, cutting of the die bond film 3 made of adhesive composition 3(c) in the cool expand process The properties are poor, and even in the cut die-bond film 3a, the edge portion is not peeled off from the adhesive layer 2 (peel-off is not confirmed), and the die-bond film made of adhesive composition 3(c) In comparison with the dicing die bond film 20 (DDF(y)) of Example 25 using (3), the cleavage and pick-up properties of the die bond film 3 made of adhesive composition 3(c) were evaluated. It was confirmed that the results were inferior.

Similarly, for the dicing die bond films 20 (DDF(bb)) and (DDF(cc)) of Comparative Examples 2 and 3, the base films 1(j) and 1( l) The average value of the elastic modulus at 5% stretching in the MD and TD directions at 0°C (Y _MD + Y _TD )/2, the addition amount of the polyisocyanate-based crosslinking agent in the adhesive composition 2(q), and the polyisocyanate-based Since the equivalence ratio (-NCO/-OH) between the isocyanate group (-NCO) of the crosslinking agent and the hydroxyl group (-OH) of the acrylic adhesive polymer is below the lower limit of the range of the present invention, the adhesive composition in the cool expand process The cutting property of the die bond film 3 made of 3(a) is poor, and even in the cut die bond film 3a, a state of peeling from the adhesive layer 2 is not formed at the edge portion (no peeling is confirmed). (without), for example, compared with the dicing die bond film 20 (DDF(a) to DDF(q)) and (DDF(t) to DDF(w)) of Examples 1 to 17 and 20 to 23. As a result, it was confirmed that the die bond film 3 made of adhesive composition 3(a) was inferior in any evaluation of the splitting properties and pick-up properties.

Additionally, regarding the dicing die bond film 20 (DDF(dd)) of Comparative Example 4, the adhesive composition 2(a) of the dicing tape 10 satisfies the requirements of the present invention, but the base film 1(i ), the average value of the elastic modulus (Y _MD + Y _TD )/2 upon 5% stretching in the MD and TD directions at 0°C is below the lower limit of the range of the present invention, and the pressure-sensitive adhesive layer (2) is irradiated with ultraviolet rays under aerobic conditions. Since the post-adhesion A exceeds the upper limit of the range of the present invention, the cleavage property of the die-bond film 3 made of the adhesive composition 3(a) in the cool expand process is poor, and the cut die-bond film 3a Although a state of being slightly peeled from the adhesive layer 2 was formed at the four corners, the adhesive force A was large after irradiation with ultraviolet rays under aerobic oxygen, and for example, the dicing die bond film 20 of Example 7 (DDF(g) )), it was confirmed that the die bond film 3 made of adhesive composition 3(a) was inferior in any evaluation of the splitting properties and pick-up properties.

Furthermore, regarding the dicing die bond film 20 (DDF(ee)) of Comparative Example 5, the base film 1(b) of the dicing tape 10 satisfies the requirements of the present invention, but the adhesive composition 2( The addition amount of the polyisocyanate crosslinking agent in s) and the equivalent ratio (-NCO/-OH) between the isocyanate group (-NCO) of the polyisocyanate crosslinking agent and the hydroxyl group (-OH) of the acrylic adhesive polymer are within the scope of the present invention. Since it was below the lower limit, the cutting properties of the die bond film 3 made of adhesive composition 3(a) in the cool expand process were good, but in the cut die bond film 3a, an adhesive layer was formed on the edge portion. From (2), the peeled state was not formed (peeling was not confirmed), and in the evaluation of pick-up properties, for example, compared with the dicing die bond film 20 (DDF(i)) of Example 9. , it was confirmed that the results were slightly inferior.

Furthermore, regarding the dicing die bond film 20 (DDF(ff)) of Comparative Example 6, the properties of the base film 1(b) and the adhesive composition 2(t) of the dicing tape 10 are similar to those of the present invention. Although it satisfies the requirements, since the adhesive force A after aerobic ultraviolet irradiation of the adhesive layer 2 exceeds the upper limit of the range of the present invention, the die bond film made of adhesive composition 3(a) in the cool expand process ( The cutting property of 3) is good, and in the cut die bond film 3a, the edge portion (part around all directions) is appropriately peeled from the adhesive layer 2 of the dicing tape 10. It was confirmed that the adhesive force A after aerobic ultraviolet irradiation was large, and that the results were inferior in the evaluation of pick-up properties compared to, for example, the dicing die bond film 20 (DDF(p)) of Example 16.

Furthermore, for the dicing die bond film 20 (DDF(gg)) of Comparative Example 7, the adhesive strength of the base film 1(b) of the dicing tape 10 and the adhesive layer 2 after irradiation with ultraviolet rays under aerobic Although it satisfies the requirements of the present invention for A and adhesion B after irradiation with ultraviolet rays under oxygen-free conditions, the amount of polyisocyanate crosslinking agent added in the adhesive composition 2(u), the isocyanate group (-NCO) of the polyisocyanate crosslinking agent, and the acrylic adhesive polymer Since the equivalence ratio (-NCO/-OH) with the hydroxyl group (-OH) exceeds the upper limit of the range of the present invention, the die bond film 3 made of adhesive composition 3(a) has a problem in the cool expand process. Although it was possible to cut at a level without cutting, excessive and irregular cutting was made from the adhesive layer 2 of the dicing tape 10 from the edge portion (around all directions) toward the center of the cut die bond film 3a. It peels off easily, and at the time of pickup, the area of the die bond film 3a peeled off from the adhesive layer above to the adhesive layer 2 after irradiation with ultraviolet rays of the dicing tape 10 becomes too large, e.g. For example, it was confirmed that the results were inferior in the evaluation of pick-up properties compared to the dicing die bond film 20 (DDF(l)) of Example 12. Additionally, after the expand process, some cracks in the adhesive layer 2 and bending from the base film 1 were observed.

One… base film
2… adhesive layer
3, 3a1, 3a2… Die bond film (adhesive layer, adhesive film)
4… Stainless steel plate (SUS304/BA plate)
5… flat cross stage
6… actuator
7… load cell
8… rotating stage
9… Semiconductor chip with die bond film
10… dicing tape
20… Dicing Die Bond Film
W, 30… semiconductor wafer
30a, 30a1, 30a2… semiconductor chip
30b… Modification area (cleavage area in (c) to (f) of Figures 7 and (a) and (b) of Figures 8)
30c… Semiconductor wafer cleavage line
31… Semiconductor wafer core
32… Left side of semiconductor wafer
33… Right side of semiconductor wafer
34… Semiconductor wafer upper side
35… Semiconductor wafer lower side
40… Ring frame (wafering)
41… I don't see it
50… suction collet
60… Push-up pin (needle)
70, 80… semiconductor device
71, 81… Support substrate for mounting semiconductor chips
72… external connection terminal
73… Terminals
74, 84… wire
75, 85… sealant
76… support member

Claims (9)

A dicing tape comprising a base film and an adhesive layer containing an active energy ray-curable adhesive composition on the base film,
The base film has an elastic modulus of Y _MD when stretched by 5% in the MD direction at 0°C (the flow direction at the time of forming the base film) and the TD direction at 0°C (direction perpendicular to the MD direction). When the elastic modulus at 5% elongation is Y _TD , the average value of the elastic modulus at each 5% elongation (Y _MD + Y _TD )/2 has a value in the range of 165 MPa to 260 MPa,
The active energy ray-curable adhesive composition includes an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, a photopolymerization initiator, and a polyisocyanate-based crosslinking agent that crosslinks with the hydroxyl group,
The acrylic adhesive polymer has a hydroxyl value in the range of 12.0 mgKOH/g or more and 40.5 mgKOH/g or less, and the polyisocyanate-based crosslinking agent is 2.4 parts by mass or more and 7.0 parts by mass or less with respect to 100 parts by mass of the acrylic adhesive polymer. The equivalence ratio (-NCO/-OH) between the isocyanate group (-NCO) of the polyisocyanate crosslinking agent and the hydroxyl group (-OH) of the acrylic adhesive polymer is adjusted to be within the range of 0.14 to 1.32. become,
The adhesive layer of the dicing tape has an adhesive strength A (integrated ultraviolet light amount: 150 mJ/m ² , peeling angle: 90°, peeling speed) after aerobic ultraviolet irradiation to a stainless steel plate (SUS304/BA plate) at 23°C. : 300 mm/min) is in the range of 3.50 N/25 mm or less, and the adhesive strength B after irradiation with ultraviolet rays under oxygen-free conditions to a stainless steel plate (SUS304·BA plate) at 23°C (integrated ultraviolet ray intensity: 150 mJ/m ² , peeling) A dicing tape having an angle: 90°, peeling speed: 300 mm/min) in the range of 0.25 N/25 mm to 0.70 N/25 mm. According to claim 1,
The base film is a dicing tape, which is a resin film composed of a resin composition containing a polyamide resin (PA) and a resin (IO) composed of an ionomer of an ethylene-unsaturated carboxylic acid-based copolymer. The method of claim 1 or 2,
The active energy ray-curable adhesive composition includes, as the photopolymerization initiator, at least an α-aminoalkylphenone-based photopolymerization initiator (a), an alkylphenone-based photopolymerization initiator (b) other than the α-aminoalkylphenone-based photopolymerization initiator, and an acylphosphine. A dicing tape containing three types of photopolymerization initiators: oxide photopolymerization initiator (c). According to claim 3,
The respective contents of the α-aminoalkylphenone-based photopolymerization initiator (a), the alkylphenone-based photopolymerization initiator (b) other than the α-aminoalkylphenone-based photopolymerization initiator, and the acylphosphine oxide-based photopolymerization initiator (c) are the acrylic-based photopolymerization initiators. With respect to 100 parts by mass of the adhesive polymer, the α-aminoalkylphenone-based photopolymerization initiator (a) is in the range of 0.8 to 5.0 parts by mass, and the alkylphenone-based photopolymerization initiator (b) other than the α-aminoalkylphenone-based photopolymerization initiator is A dicing tape in which the range is from 0.2 parts by mass to 5.0 parts by mass, and the acylphosphine oxide-based photopolymerization initiator (c) is in the range from 0.2 parts by mass to 2.0 parts by mass. The method of claim 1 or 2,
A dicing tape, wherein the ratio A/B of the adhesive force A after irradiation with ultraviolet rays under aerobic conditions to the adhesive force B after irradiation with ultraviolet rays under anaerobic conditions is in the range of 3.00 to 5.00. The method of claim 1 or 2,
The dicing tape is made by expanding (stretching) a sheet-like laminate in which a die-bond film and a plurality of individual semiconductor chips are sequentially stacked on the adhesive layer at a temperature of -30°C to 0°C to separate them. A dicing tape used to cut the die bond film according to the shape of the semiconductor chip. The method of claim 1 or 2,
The dicing tape is made by expanding (stretching) the dicing tape to which the sheet-shaped laminate is attached at a temperature in the range of -30°C to 0°C, and forming a die-bond film according to the shape of the individual semiconductor chips. A dicing tape in which the edge portion (part around all directions) of the die bond film is peeled from the adhesive layer when the die bond film is cut. The method of claim 1 or 2,
The die bond film cut according to the shape of the divided semiconductor chip has a ratio of the area of the edge portion (part around all directions) of the die bond film peeled from the adhesive layer to the area of the entire cut die bond film. Dicing tape in the range of 10% to 45%. A method of manufacturing a semiconductor device using the dicing tape according to claim 1 or 2.