KR20220086506A - Dicing tape and dicing dibond film - Google Patents

Abstract

[Problem] In the manufacturing process of a semiconductor wafer under low temperature, lifting of the die-bonding film from the adhesive tape is suppressed, a sufficient kerf width is ensured, and the dicing tape and die-bonding film which show good pick-up property can be peeled off To provide a dicing die bond film prepared for
[Solutions] A base film comprising a polyamide resin and a resin comprising an ionomer of an ethylene/unsaturated carboxylic acid copolymer, an acrylic adhesive polymer having an active energy ray reactive carbon-carbon double bond and a hydroxyl group, a photopolymerization initiator, and , A dicing tape comprising a pressure-sensitive adhesive layer comprising a pressure-sensitive adhesive composition comprising a polyisocyanate-based crosslinking agent that cross-links the hydroxyl group.

Description

A dicing tape and a dicing die-bonding film {DICING TAPE AND DICING DIBOND FILM}

The present invention relates to a dicing tape and a dicing die-bonding film that can be used in the manufacturing process of a semiconductor device.

Conventionally, in the manufacture of a semiconductor device, in order to separate a semiconductor wafer into semiconductor chips by a dicing process, a dicing tape or a dicing die bond in which the said dicing tape and the die bond film were integrated. Film is sometimes used. The dicing tape has a form in which a pressure-sensitive adhesive layer is provided on a base film, a semiconductor wafer is placed on the pressure-sensitive adhesive layer, and the semiconductor chips divided into pieces do not scatter during dicing of the semiconductor wafer. used for the purpose Thereafter, the semiconductor chip is peeled from the pressure-sensitive adhesive layer of the dicing tape, and is fixed to an adherend such as a lead frame, a wiring board, or a separate semiconductor chip through a separately prepared adhesive or adhesive film.

A dicing die-bonding film is provided so that the die-bonding film (Hereinafter, it may call an "adhesive film" or an "adhesive agent layer") is peelable on the adhesive layer of a dicing tape. In the manufacture of a semiconductor device, a semiconductor wafer is adhered and placed on a die-bonding film of a dicing die-bonding film, and the semiconductor wafer is diced together with the die-bonding film to obtain a semiconductor chip having an individual adhesive film. used to obtain Thereafter, the semiconductor chip is peeled (picked up) from the pressure-sensitive adhesive layer of the dicing tape together with the die-bonding film as a semiconductor chip having a die-bonding film, and the semiconductor chip is attached to a lead frame, a wiring board, or a separate die-bonding film through the die-bonding film. It is fixed to an adherend, such as a semiconductor chip.

Although the said dicing die-bonding film is suitably used from a viewpoint of productivity improvement, as a method of using the dicing die-bonding film to obtain a semiconductor chip having a die-bonding film, in recent years, it has been applied to a conventional high-speed rotating dicing blade. As a method that can suppress chipping when the thinned semiconductor wafer is divided into chips instead of the full-cut cutting method by (1) DBG (Dicing Before Grinding) method, (2) stealth dicing (registered trademark) A method has been proposed by

In the DBG method of (1) above, first, without completely cutting the semiconductor wafer using a dicing blade, a divided groove of a predetermined depth is formed on the surface of the semiconductor wafer, and then the back surface is ground, the amount of grinding By appropriately adjusting and performing, a divided body of a semiconductor wafer including a plurality of semiconductor chips or a semiconductor wafer capable of being divided into a plurality of semiconductor chips is obtained. Then, the divided body of the said semiconductor wafer or the semiconductor wafer which can be divided into the said semiconductor chip is affixed to a dicing die-bonding film, and the dicing tape is cooled at low temperature (for example, -30 degreeC or more and 0 degreeC or less). ) to expand (hereinafter referred to as “cool expand” in some cases), along the dividing groove, the die-bonding film brittle at low temperature is cut into sizes corresponding to individual semiconductor chips (割斷), or cut together with the semiconductor wafer. Finally, it peels by pick-up from the adhesive layer of a dicing tape, and the semiconductor chip which has an individual die-bonding film can be obtained.

In the method by stealth dicing of (2) above, first, a semiconductor wafer is affixed to a dicing die-bonding film, and a laser beam is irradiated inside the semiconductor wafer to selectively form a modified region (reformed layer) while dicing is scheduled. form a line Thereafter, by cool-expanding the dicing tape, cracks are propagated vertically from the modified region with respect to the semiconductor wafer, and are respectively cut along the line to be diced along with the die-bonding film brittle at low temperature. Finally, it peels by pick-up from the adhesive layer of a dicing tape, and the semiconductor chip which has an individual die-bonding film can be obtained.

Further, in the DBG method of (1) above, instead of forming a dividing (cleaving) groove on the surface of the semiconductor wafer by a dicing blade, a modified region is selectively provided inside the semiconductor wafer by stealth dicing and reorganized It is also possible to obtain a semiconductor wafer that can be converted into This is a method called SDBG (Stealth Dicing Before Griding).

In the pick-up step, after cutting the semiconductor wafer having the die-bonding film, the dicing tape is expanded in the vicinity of room temperature (hereinafter, sometimes referred to as “room-temperature expand”) and adjacent individual die-bonding films widening the interval between semiconductor chips having By fixing the gap (kerf width) wide, the semiconductor chip having the cut individual die-bonding films can be peeled and picked up from the pressure-sensitive adhesive layer of the dicing tape.

However, in recent years, with the reduction of the thickness of semiconductor wafers, chip cracks are more likely to occur during wire bonding in the multi-stage lamination process of semiconductor chips. is becoming Wire-embedded die-bonding films require the wires to be embedded without gaps during die bonding, and tend to have a thicker thickness and higher fluidity (low melt viscosity under high temperatures) than the above-mentioned conventional general-purpose die-bonding films. Therefore, when such a wire-embedded die-bonding film is laminated on a conventional dicing tape and provided for manufacturing a semiconductor chip, the following problems arise.

That is, in the above-described cool-expand process, a cutting force (external stress) is applied from the cool-expanded dicing tape to a die-bonding film or a semiconductor wafer having a die-bonding film in close contact with the dicing tape. However, in the conventional dicing tape in which the tensile stress under low temperature cannot be said to be sufficiently large, the tensile stress is sufficiently marginal as an external stress sufficient to cut the semiconductor wafer having the wire-embedded die-bonding film. It is difficult to say that it is a certain size, and there are cases where a part of the cut portion of the semiconductor wafer having the wire-embedded die-bonding film is not cut. In addition, the gap (kerf width) between semiconductor chips is not sufficiently wide, so that reattachment of thick cut die-bonding films or collisions between semiconductor chips may occur, leading to pick-up errors in the pick-up process. .

Moreover, in the semiconductor chip which has a die-bonding film on the adhesive layer of the dicing tape which passed through the expand process, the edge part of the die-bonding film may peel partially from the adhesive layer of a dicing tape. As the wiring circuit formed in advance on the surface of the semiconductor chip becomes multi-layered, the difference in the coefficient of thermal expansion between the wiring circuit and the material of the semiconductor chip also becomes a factor, and the semiconductor chip is liable to warp, so the partial peeling is likely to be promoted. If the occurrence of this partial peeling (hereinafter, sometimes referred to as "float") is large, in a subsequent cleaning process, etc., it is an unintentional drop-off of the semiconductor chip having the die-bonding film from the dicing tape. There is a possibility of becoming a cause and a possibility of becoming a cause of a pick-up error by a position shift of a semiconductor chip, the following phenomenon, etc. in a subsequent pick-up process. In particular, when the pressure-sensitive adhesive layer of the dicing tape is constituted from an active energy ray (for example, ultraviolet) curable pressure-sensitive adhesive composition, before picking up the semiconductor chip having the die-bonding film from the dicing tape, in order to lower the adhesive force of the pressure-sensitive adhesive layer , to cure the pressure-sensitive adhesive layer by irradiating ultraviolet rays, but when the edge portion of the semiconductor chip having the die-bonding film is greatly peeled from the pressure-sensitive adhesive layer of the dicing tape, the pressure-sensitive adhesive layer in the peeled portion is in contact with oxygen in the air, Even if it irradiates an ultraviolet-ray, an adhesive layer may not fully harden|cure. In such a case, since the adhesive force of an adhesive layer does not fully fall, in a pick-up process, it pushes up from the lower surface side of a dicing tape with a push-up jig with a large area of a push-up part, and picks up the semiconductor chip located on the said jig. When the adsorption collet is brought into contact from the upper part of the semiconductor chip, the edge portion of the semiconductor chip having the die-bonding film is re-adhered to the pressure-sensitive adhesive layer having insufficient curing, and the semiconductor chip having the die-bonding film is removed from the pressure-sensitive adhesive layer of the dicing tape. It is easy to generate|occur|produce the phenomenon that it becomes impossible to pick up.

Therefore, with respect to the die-bonding film, the examination of control of the balance of cleavage property and fluidity and improvement of reliability is actively conducted, while for the dicing tape, not only the conventional die-bonding film but also the wire-embedded die-bonding film and Even if a die-bonding film having the same thickness and high fluidity is used, the die-bonding film can be well cut together with the semiconductor wafer by expansion, and partial peeling of the die-bonding film from the pressure-sensitive adhesive layer is difficult to occur. , and finally, a performance capable of achieving good pickup properties is desired.

As a prior art for suppressing the above-described problem of cleavage at the time of expansion and the occurrence of partial peeling after expansion, Patent Document 1 discloses satisfactory cleavage with respect to the die-bonding film on the dicing tape in the expand process and the die-bonding film. It has a laminated structure including a base material and an adhesive layer for the purpose of suppressing lifting and peeling from the singe tape, and in a tensile test under specific conditions, 15 to 32 MPa with a strain value of at least a part in the range of 5 to 30% A dicing tape capable of exhibiting a tensile stress within the range of is disclosed.

On the other hand, in the handling of the dicing tape, since the dicing tape may be adhered to the die bond film under heating conditions, and the dicing die bond film may be adhered to the semiconductor wafer under heating conditions, further In the case of precut processing as a dicing die-bonding film, the dicing tape is also required to have a certain heat resistance, for example, because it may be locally heat-treated to remove the excess dicing tape satisfactorily without breaking it. . When the heat resistance of a dicing tape is low, it may adhere on a work table (die) and it may become difficult to peel. Moreover, when distortion, such as distortion, curvature, etc. generate|occur|produces in a dicing tape by heat|fever, the thinned semiconductor wafer may deform|transform. For this reason, about the dicing tape, heat resistance is also calculated|required with favorable cleavability of the semiconductor wafer which has the above-mentioned die-bonding film, favorable adhesiveness with the die-bonding film up to a pick-up process, and favorable pick-up property.

As a prior art for improving the above heat resistance, Patent Document 2 discloses an ethylene/unsaturated carboxylic acid base material for the purpose of providing a dicing film base material that is excellent in heat resistance and has a balance between cleavage (cleavage) and expandability. At least 30 parts by mass or more and 95 parts by mass or less of at least one resin (A) selected from the group consisting of ionomers of the copolymer and the ethylene-unsaturated carboxylic acid copolymer, and at least selected from the group consisting of polyamides and polyurethanes 5 parts by mass or more and less than 40 parts by mass of one kind of resin (B) and 0 parts by mass or more and 30 parts by mass or less of an antistatic agent (C) other than the polyamide (however, resin (A) and resin (B)) And the total of antistatic agent (C) shall be 100 mass parts) The dicing film base material which contains the layer which consists of a resin composition at least one layer is disclosed.

Japanese Patent Laid-Open No. 2019-16787 Japanese Patent Laid-Open No. 2017-98369

Regarding the dicing tape of Patent Document 1, in Examples, a dicing die-bonding film in which a dicing tape capable of exhibiting specific tensile stress characteristics and a die-bonding film having a thickness of 10 µm mainly made of an acrylic resin are laminated on a dicing die-bonding film Although it is shown that a die-bonding film is parted (cleaved) favorably by bonding a semiconductor wafer divided body and cool-expanding, it is still a die-bonding film after cutting WHEREIN: From the adhesive layer of a dicing tape In some cases, the area where the float occurred was about 20%, and there was room for improvement. In addition, there is no mention about the cleavability of the thick and highly fluid wire-embedded die-bonding film, the pick-up property of semiconductor chips, or the heat resistance of the dicing tape, and these points are unclear. At least, the polyvinyl chloride substrate as a dicing tape shown in Examples cannot be said to have sufficient heat resistance.

Moreover, regarding the dicing film base material of patent document 2, in an Example, the dicing film base material containing at least one layer which consists of a specific resin composition has excellent heat resistance, and splitting (cleaving) property of a semiconductor wafer and expansion|expansion. It is described that it is excellent in the balance of performance and that by using it as a dicing film, the dicing process at the time of semiconductor manufacturing and the subsequent expansion process can be smoothly performed, and the production of a semiconductor without tape residue or deformation is possible, Problems such as the cleavability of die-bonding films including wire-embedded films and cool-expand, or partial peeling (float) of the dicing tape of the die-bonding film from the pressure-sensitive adhesive layer are not recognized at all, and , including pick-up properties of semiconductor chips, these points are unclear.

As described above, the dicing tape of the prior art has high fluidity like a wire-embedded die-bonding film, and is bonded to a thick die-bonding film and provided as a dicing die-bonding film in the manufacturing process of a semiconductor chip. In many respects, such as cleavability of a semiconductor wafer having a die-bonding film at the time of expansion, suppression of partial peeling (lifting) from the pressure-sensitive adhesive layer of the die-bonding film after expansion, pick-up properties of semiconductor chips and heat resistance, etc. is difficult to do, there is still room for improvement.

The present invention has been made in view of the above problems and situations, and as a dicing tape for a semiconductor manufacturing process, high fluidity such as a wire-embedded die-bonding film and a thick die-bonding film, even when applied by bonding, (1) excellent heat resistance, (2) a semiconductor wafer having a die-bonding film is satisfactorily cleaved by cool expand, a kerf width can be sufficiently secured by normal temperature expand, (3) a die after cleaving In a bond film, partial peeling (lifting) of a dicing tape from a pressure-sensitive adhesive layer is sufficiently suppressed, and a semiconductor chip having a cleaved individual die bond film can be satisfactorily picked up for the purpose of providing a dicing tape do it with

As a result of earnest investigations so as to solve the above problems for this purpose, the inventors of the present invention (1) as a base film for a dicing tape, a resin (A) comprising an ionomer of an ethylene-unsaturated carboxylic acid-based copolymer, and a polyamide resin (B) using a resin film having a predetermined tensile stress property value composed of a resin containing a specific mass ratio, and (2) an acrylic adhesive polymer having a hydroxyl value in a specific range as a main component And, by using the active energy ray-curable adhesive composition which made the residual hydroxyl group concentration and the active energy ray reactive carbon-carbon double bond concentration into predetermined ranges, it found that the said subject could be solved, and came to achieve this invention.

That is, the dicing tape related to the first aspect of the present invention,

On the base film and the said base film, the adhesive layer containing an active energy ray-curable adhesive composition is provided,

(1) The base film contains a resin (A) composed of an ionomer of an ethylene-unsaturated carboxylic acid-based copolymer, and a polyamide resin (B),

The mass ratio (A):(B) of the said resin (A) and the said resin (B) in the whole said base film is comprised with the resin composition which is the range of 72:28-95:5,

When the stress at the time of 5% elongation in -15 degreeC stretches a base film in any direction of MD direction (flow direction at the time of film forming of a base film) and TD direction (direction perpendicular to MD direction) Also in the range of 15.5 MPa or more and 28.5 MPa or less,

(2) The active energy ray-curable pressure-sensitive adhesive composition includes an acrylic pressure-sensitive adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, a photopolymerization initiator, and a polyisocyanate-based cross-linking agent that cross-reacts with the hydroxyl group,

The acrylic adhesive polymer, the glass transition temperature (Tg) of the main chain is in the range of -65 ° C. or more and -50 ° C. or less, and the hydroxyl value is in the range of 12.0 mgKOH / g or more and 55.0 mgKOH / g or less,

In the active energy ray-curable pressure-sensitive adhesive composition,

The equivalent ratio (NCO/OH) of the isocyanate group (NCO) of the polyisocyanate-based crosslinking agent and the hydroxyl group (OH) of the acrylic adhesive polymer is in the range of 0.02 or more and 0.20 or less,

The residual hydroxyl group concentration after the crosslinking reaction is in the range of 0.18 mmol or more and 0.90 mmol or less per 1 g of the active energy ray-curable pressure-sensitive adhesive composition,

The active energy ray-reactive carbon-carbon double bond concentration is in the range of 0.85 mmol or more and 1.60 mmol or less per 1 g of the active energy ray-curable pressure-sensitive adhesive composition.

In one aspect, the said active energy ray-reactive carbon-carbon double bond density|concentration has the range of 1.02 mmol or more and 1.51 mmol or less per 1 g of active energy ray-curable adhesive composition.

In one aspect, the said acrylic adhesive polymer has the weight average molecular weight Mw of the range of 200,000 or more and 600,000 or less.

In one aspect, the said acrylic adhesive polymer has an acid value in the range of 0 mgKOH/g or more and 9.0 mgKOH/g or less.

Moreover, according to the 2nd aspect of this invention, the dicing tape of the structure mentioned above can provide the dicing die-bonding film which provided the die-bonding film on the said adhesive layer of the said dicing tape.

In one aspect, the said dicing die-bonding film has the low-angle adhesive force after ultraviolet irradiation at 23 degreeC of the adhesive layer of the said dicing tape with respect to the said die-bonding film (a peeling angle of 30 degrees, a peeling rate of 600 mm/min. ) is 0.95N/25mm or less, and the shear adhesive force (tensile rate 1,000mm/min) before ultraviolet irradiation at -30°C of the pressure-sensitive adhesive layer of the dicing tape to the die-bonding film is 100.0N/100mm ² More than that.

In one aspect, as for the said dicing die-bonding film, the said die-bonding film contains a glycidyl group containing (meth)acrylic acid ester copolymer, an epoxy resin, and a phenol resin as a resin component.

In one aspect, in the dicing die-bonding film, the die-bonding film is a wire-embedded die-bonding film.

In one embodiment, the dicing die-bonding film is 100 based on the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin as the die-bonding film is a resin component. (a) 17 parts by mass or more and 50 parts by mass or less of the glycidyl group-containing (meth)acrylic acid ester copolymer, 30 parts by mass or more and 50 parts by mass or less of the epoxy resin, the phenol resin In the range of 20 parts by mass or more and 53 parts by mass or less, the total amount of the resin component is adjusted to 100 parts by mass, and (b) the curing accelerator is added to 100 parts by mass of the total amount of the epoxy resin and the phenol resin. (c) 10 parts by mass based on 100 parts by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin and the phenol resin, including in the range of 0.01 parts by mass or more and 0.07 parts by mass or less, (c) inorganic filler It is included in the range of not less than part and not more than 80 parts by mass.

According to the present invention, as a dicing tape for a semiconductor manufacturing process, even when a die-bonding film having high fluidity and thick thickness like a wire-embedded die-bonding film is laminated and applied, (1) excellent heat resistance, ( 2) A semiconductor wafer having a die bond film is well cut by cool expand, and a sufficient kerf width can be secured by room temperature expand, (3) in the die bond film after cutting, the dicing tape is It is possible to provide a dicing tape in which partial peeling (lifting) from the pressure-sensitive adhesive layer is sufficiently suppressed and (4) capable of favorably picking up a semiconductor chip having an individual die-bonding film cleaved.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which showed an example of the structure of the base film of the dicing tape to which this embodiment is applied.
2 is a cross-sectional view showing an example of the configuration of a dicing tape to which the present embodiment is applied.
3 is a cross-sectional view showing an example of a dicing die-bonding film having a configuration in which the dicing tape to which the present embodiment is applied is bonded to a die-bonding film.
It is a flowchart explaining the manufacturing method of a dicing tape.
5 is a flowchart illustrating a method for manufacturing a semiconductor chip.
6 is a perspective view showing a state in which a ring frame (wafer ring) and a semiconductor wafer processed so as to be separated into pieces are affixed to the center of the die-bonding film at the edge of the dicing die-bonding film.
7(a) to 7(f) are cross-sectional views showing an example of a grinding step of a semiconductor wafer in which a plurality of modified regions are formed by laser beam irradiation and a bonding step of the semiconductor wafer to a dicing die-bonding film.
Fig. 8 (a) to (f) are cross-sectional views showing a manufacturing example of a semiconductor chip using a thin film semiconductor wafer having a plurality of modified regions to which a dicing die-bonding film is bonded.
9 is a schematic cross-sectional view of an embodiment of a semiconductor device having a laminate configuration using semiconductor chips manufactured using a dicing die-bonding film to which the present embodiment is applied.
10 is a schematic cross-sectional view of an embodiment of another semiconductor device using a semiconductor chip manufactured using a dicing die-bonding film to which the present embodiment is applied.
11 : (a) - (c) are schematic diagrams for demonstrating the measuring method of the adhesive force after UV irradiation of the adhesive layer of a dicing tape with respect to a die-bonding film (adhesive layer).
It is a schematic for demonstrating the measuring method of the shear adhesive force in -30 degreeC of the adhesive layer of a dicing tape with respect to a die-bonding film (adhesive adhesive layer).
Fig. 13 is a plan view for explaining a method of measuring the interval (kerf width) between semiconductor chips after expansion.
14 is an enlarged plan view of a central portion of the semiconductor wafer in FIG. 13 .

EMBODIMENT OF THE INVENTION Hereinafter, with reference to drawings as needed, preferable embodiment of this invention is described in detail. However, this invention is not limited to the following embodiment.

(Composition of dicing tape and dicing die-bonding film)

1 : (a) - (d) is sectional drawing which showed an example of the structure of the base film 1 of the dicing tape to which this embodiment is applied. The base film 1 of the dicing tape of this embodiment may be a single layer of a single resin composition (refer to (a) 1-A of FIG. 1), and the laminated body which consists of multiple layers of the same resin composition (( in b) 1-B) or a laminate (refer to (c) 1-C and (d) 1-D in Fig. 1 ) composed of a plurality of layers of different resin compositions. Although the number of layers is not specifically limited in setting it as the laminated body which consists of multiple layers, It is preferable that it is the range of 2 or more layers and 5 or less layers.

2 : is sectional drawing which showed an example of the structure of the dicing tape to which this embodiment is applied. As shown in FIG. 2 , the dicing tape 10 has a structure provided with the pressure-sensitive adhesive layer 2 on the first surface of the base film 1 . In addition, although not shown in the figure, the base material sheet (release liner) which has detachability on the surface (surface opposite to the surface opposite to the base film 1) of the adhesive layer 2 of the dicing tape 10. may be provided. The base film 1 is comprised from the resin composition containing resin (A) which consists of an ionomer of an ethylene-unsaturated carboxylic acid type copolymer, and polyamide resin (B). As the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 2, for example, an active energy ray-curable acrylic pressure-sensitive adhesive that is cured and contracted by irradiating active energy rays such as ultraviolet rays (UV) and the adhesive force to an adherend decreases. .

The dicing tape 10 having such a structure is used, for example, as follows in the semiconductor manufacturing process. On the pressure-sensitive adhesive layer 2 of the dicing tape 10, a semiconductor wafer having division grooves formed on its surface by a blade or a semiconductor wafer having a modified layer formed therein by a laser is affixed and held (temporarily fixed), and cooled After dividing the semiconductor wafer into individual semiconductor chips by expanding, the kerf width between the semiconductor chips is sufficiently expanded by room temperature expansion, and the individual semiconductor chips are separated into the adhesive layer of the dicing tape 10 by a pickup process. It is peeled from (2). The obtained semiconductor chip is fixed to a to-be-adhered body, such as a lead frame, a wiring board, or another semiconductor chip, via the adhesive agent or adhesive film prepared separately.

Fig. 3 is a cross-sectional view showing an example of a configuration in which the dicing tape 10 to which the present embodiment is applied is bonded and integrated with a die-bonding film (adhesive film) 3, that is, a so-called dicing die-bonding film. As shown in FIG. 3 , the dicing die-bonding film 20 has a structure in which a die-bonding film (adhesive film) 3 is adhered and laminated so as to be peelable on the pressure-sensitive adhesive layer 2 of the dicing tape 10 . has a

The dicing die-bonding film 20 having such a structure is used, for example, as follows in the semiconductor manufacturing process. On the die bond film 3 of the dicing die bond film 20, a semiconductor wafer in which division grooves are formed on the surface by a blade or a semiconductor wafer in which a modified layer is formed inside by a laser is affixed and held (adhesive) Then, the semiconductor wafer is cut together with the die-bonding film 3 by cool expand to obtain a semiconductor chip having the individual die-bonding films 3 . Alternatively, a semiconductor wafer is affixed and held (adhesive) on the die bond film 3 of the dicing die bond film 20, and a modified layer is formed inside the semiconductor wafer by a laser in that state, A semiconductor wafer is cleaved together with the die-bonding film 3 by cool expand, and the semiconductor chip which has individual die-bonding film 3 is obtained. Next, after the kerf width between the semiconductor chips having the die-bonding films 3 is sufficiently expanded by room temperature expansion, the semiconductor chips having the individual die-bonding films 3 are stacked on the dicing tape 10 by a pick-up process. It peels from the adhesive layer 2 of The semiconductor chip having the obtained die-bonding film (adhesive film) 3 is fixed to an adherend such as a lead frame, a wiring board, or another semiconductor chip via a die-bonding film (adhesive film) 3 . Although not shown in the drawings, the surface of the pressure-sensitive adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1) and the surface of the die-bonding film 3 (the pressure-sensitive adhesive layer) (2) The surface opposite to the surface opposite to the surface) may be provided with a base material sheet (release liner) each having detachability.

<Dicing Tape>

(base film)

The base film 1 which is a 1st structural element in the dicing tape 10 of this invention is demonstrated below. The base film (1) contains a resin (A) composed of an ionomer (hereinafter, simply referred to as “ionomer”) of an ethylene/unsaturated carboxylic acid-based copolymer, and a polyamide resin (B). It is a resin film comprised from a resin composition.

The total amount of the resin (A) comprising the ionomer of the ethylene-unsaturated carboxylic acid-based copolymer and the polyamide resin (B) in the entire base film (1) is at -15°C of the base film (1). Although the stress at the time of 5% elongation in this is not specifically limited as long as it exists in said range, It is preferable to occupy 75 mass % or more with respect to the resin composition whole quantity which comprises the base film 1 whole. More preferably, it is 80 mass % or more, Especially preferably, it is 90 mass % or more.

The dicing tape 10 using the base film 1 of such a structure is the form in which the die-bonding film 3 closely_contact|adhered on the adhesive layer 2 WHEREIN: The cool expand process of the manufacturing process of a semiconductor device. Furthermore, it is preferable for use in the normal temperature expand process. That is, by the cool expand process, the semiconductor wafer having the die-bonding film 3 and processed so as to be separated into pieces is cut favorably along the dicing schedule line, and each die-bonding film 3 of a predetermined size is It is preferable to obtain a semiconductor chip having a high yield. In addition, even in the room temperature expand process, expandability necessary to sufficiently secure a kerf width between semiconductor chips is maintained.

[Resin (A) composed of an ionomer of an ethylene/unsaturated carboxylic acid-based copolymer]

In the base film (1) of the present embodiment, the resin (A) composed of the ionomer of the ethylene-unsaturated carboxylic acid-based copolymer is a part or all of the carboxyl groups of the ethylene-unsaturated carboxylic acid-based copolymer are metal (ions ) is neutralized. In addition, in the following description, "resin consisting of the ionomer of an ethylene-unsaturated carboxylic acid type copolymer" may be described as "resin consisting of an ionomer" or simply "ionomer".

The ethylene/unsaturated carboxylic acid-based copolymer constituting the ionomer is at least a binary copolymer in which ethylene and unsaturated carboxylic acid are copolymerized, and even if it is a ternary or more multi-component copolymer in which the third copolymerization component is copolymerized. do. In addition, an ethylene/unsaturated carboxylic acid type copolymer may be used individually by 1 type, and may use 2 or more types of ethylene/unsaturated carboxylic acid type copolymer together.

As the unsaturated carboxylic acid constituting the ethylene/unsaturated carboxylic acid binary copolymer, for example, acrylic acid, methacrylic acid, ethacrylic acid, itaconic acid, itaconic anhydride, fumaric acid, crotonic acid, maleic acid, maleic anhydride C4-C8 unsaturated carboxylic acids, such as these, etc. are mentioned. In particular, acrylic acid or methacrylic acid is preferable.

When the ethylene-unsaturated carboxylic acid-based copolymer is a ternary or more multi-component copolymer, a third copolymer component forming a multi-component may be included in addition to the ethylene and unsaturated carboxylic acid constituting the binary copolymer. Examples of the third copolymerization component include unsaturated carboxylic acid esters (eg, methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, isooctyl acrylate, methyl methacrylate, ethyl methacrylate, isobutyl methacrylate, (meth)acrylic acid alkyl esters having 1 to 12 carbon atoms in the alkyl moiety such as dimethyl maleate and diethyl maleate), unsaturated hydrocarbons (eg, propylene, butene, 1,3-butadiene, pentene, 1,3- pentadiene, 1-hexene, etc.), vinyl esters (eg, vinyl acetate, vinyl propionate, etc.), oxides such as vinyl sulfuric acid and vinyl nitric acid, halogen compounds (eg, vinyl chloride, vinyl fluoride, etc.), vinyl groups A containing primary and secondary amine compound, carbon monoxide, sulfur dioxide, etc. are mentioned, As these copolymerization components, unsaturated carboxylic acid ester is preferable.

Any of a block copolymer, a random copolymer, and a graft copolymer may be sufficient as the form of the said ethylene-unsaturated carboxylic acid copolymer, and either a binary copolymer and a terpolymer may be sufficient. Among them, from the viewpoint of being industrially available, a binary random copolymer, a ternary random copolymer, a graft copolymer of a binary random copolymer, or a graft copolymer of a ternary random copolymer is preferable, and more preferably binary random copolymers or ternary random copolymers.

Specific examples of the ethylene/unsaturated carboxylic acid copolymer include binary copolymers such as ethylene/acrylic acid copolymer, ethylene/methacrylic acid copolymer, ethylene/methacrylic acid/acrylic acid 2-methyl-propyl copolymer, etc. A raw copolymer is mentioned. Moreover, you may use the commercial item marketed as an ethylene-unsaturated carboxylic acid type copolymer, For example, the Nucrel series (trademark) made by Mitsui DuPont Polychemicals, etc. can be used.

It is preferable that the copolymerization ratio (mass ratio) of the unsaturated carboxylic acid ester in the ethylene/unsaturated carboxylic acid-based copolymer is in the range of 1% by mass or more and 20% by mass or less, expandability in the expand process, and From a viewpoint of heat resistance (blocking, fusion|fusion), it is more preferable that it is the range of 5 mass % or more and 15 mass % or less.

In the base film (1) of the present embodiment, the ionomer used as the resin (A) is one in which the carboxyl group contained in the ethylene/unsaturated carboxylic acid copolymer is crosslinked (neutralized) in an arbitrary ratio with a metal ion. desirable. Metal ions, such as a lithium ion, a sodium ion, a potassium ion, a rubidium ion, a cesium ion, a zinc ion, a magnesium ion, and a manganese ion, are mentioned as a metal ion used for neutralization of an acidic radical. Among these metal ions, a magnesium ion, a sodium ion, and a zinc ion are preferable from the viewpoint of the availability of an industrialized product, and a sodium ion and a zinc ion are more preferable.

The degree of neutralization of the ethylene/unsaturated carboxylic acid copolymer in the ionomer is preferably in the range of 10 mol% or more and 85 mol% or less, and preferably 15 mol% or more and 82 mol% or less. When the degree of neutralization is 10 mol% or more, the cleavability of the semiconductor wafer having a die-bonding film can be further improved, and when the degree of neutralization is 85 mol% or less, the film formability of the film can be further improved. In addition, the neutralization degree is the compounding ratio (mol%) of the metal ion with respect to the mole number of the acidic radical which the ethylene-unsaturated carboxylic acid type copolymer has, especially a carboxyl group.

The resin (A) composed of the ionomer has a melting point of about 85 to 100°C, but the melt flow rate (MFR) of the resin (A) composed of the ionomer is 0.2 g/10 min or more and 20.0 g/ It is preferable that it is the range of 10 minutes or less, It is more preferable that it is the range of 0.5 g/10min or more and 20.0 g/10min or less, It is more preferable that it is the range of 0.5 g/10min or more and 18.0 g/10min or less. When a melt flow rate is in the said range, the film forming property as the base film 1 will become favorable. In addition, MFR is a value measured by the method based on JISK7210-1999 at 190 degreeC and 2160 g of loads.

The resin composition constituting the base film 1 of the present embodiment further contains a polyamide resin (B) in addition to the resin (A) comprising the ionomer of the ethylene/unsaturated carboxylic acid-based copolymer described above. The mass ratio (A): (B) of the resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid-based copolymer and the polyamide resin (B) is in the range of 72:28 to 95:5. By constituting the base film 1 with the resin composition, not only can the heat resistance of the base film 1 be improved, but also the tensile stress when elongated at a low temperature (for example, -15°C) can be increased. And, by making the said tensile stress into an appropriate range, with respect to the dicing tape 10 using the said base film 1, in a cool-expand process, the semiconductor wafer which has the wire-embedded die-bonding film 3 yields. A good cleaving force capable of good slicing can be imparted, and further, in the normal temperature expand step, good expandability capable of sufficiently securing the kerf width between semiconductor chips can be maintained. The said mass ratio (A):(B) becomes like this. Preferably it is the range of 74:26-92:8, More preferably, it is the range of 80:20-90:10. The upper limit and lower limit of the numerical range of the present specification can be combined by arbitrarily selecting the numerical value.

[Polyamide Resin (B)]

Examples of the polyamide resin (B) include carboxylic acids such as oxalic acid, adipic acid, sebacic acid, dodecanoic acid, terephthalic acid, isophthalic acid, and 1,4-cyclohexanedicarboxylic acid, ethylenediamine, and tetramethylene. Polycondensates with diamines such as diamine, pentamethylenediamine, hexamethylenediamine, decamethylenediamine, 1,4-cyclohexyldiamine and m-xylylenediamine, cyclic (ε-caprolactam, ω-laurolactam)環狀) a lactam ring-opening polymer, a polycondensate of aminocarboxylic acids such as 6-aminocaproic acid, 9-aminononanoic acid, 11-aminoundecanoic acid and 12-aminododecanoic acid, or the cyclic lactam, dicarboxylic acid and diamine and copolymers and the like.

A commercial item can also be used for the said polyamide resin (B). Specifically, nylon 4 (melting point 268 ° C.), nylon 6 (melting point 225 ° C.), nylon 46 (melting point 240 ° C.), nylon 66 (melting point 265 ° C.), nylon 610 (melting point 222 ° C.), nylon 612 (melting point 215 ° C.) ), nylon 6T (melting point 260° C.), nylon 11 (melting point 185° C.), nylon 12 (melting point 175° C.), copolymer nylon (eg, nylon 6/66, nylon 6/12, nylon 6/610, nylon 66/12, nylon 6/66/610, etc.), nylon MXD6 (melting point 237 degreeC), nylon 46, etc. are mentioned. Among these polyamides, nylon 6 and nylon 6/12 are preferable from the viewpoints of film forming properties and mechanical properties as the base film 1 .

The content of the polyamide resin (B) is the mass ratio of the resin (A) comprising the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (B) in the entire base film (1) ( It is a quantity such that A):(B) is in the range of 72:28 to 95:5. When the mass ratio of the said polyamide resin (B) is less than the said range, there exists a possibility that the effect of the improvement of the heat resistance of the base film 1 and the effect of the increase of the tensile stress in low temperature may become inadequate. On the other hand, when the mass ratio of the said polyamide resin (B) exceeds the said range, depending on the resin composition of the base film 1, there exists a possibility that stable film forming may become difficult. In addition, there is a fear that the flexibility of the base film 1 is impaired and the scalability in the normal temperature expand process cannot be maintained, or when the semiconductor chip having the die-bonding film 3 is picked up, due to cracks in the semiconductor chip, etc. There is a risk of pickup failure. The content of the polyamide resin (B) is the mass ratio of the resin (A) comprising the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (B) in the entire base film (1) ( It is more preferable that A):(B) is the quantity used as the range of 74:26-92:8.

In addition, when the base film 1 is a laminate consisting of multiple layers, the mass ratio of the resin (A) comprising the ionomer of the ethylene-unsaturated carboxylic acid-based copolymer to the polyamide resin (B) is in each layer. From the mass ratio of the resin (A) comprising the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (B), and the mass ratio of each layer in the entire base film 1 (laminated body) The calculated value in the whole base film 1 (laminated body) is meant.

When the mass ratio of the resin (A) comprising the ionomer of the ethylene/unsaturated carboxylic acid-based copolymer to the polyamide resin (B) in the entire base film (1) is within the above range, the heat resistance of the base film (1) is reduced. In the cool expand process when the substrate film 1 is processed in the form of a dicing tape 10 and provided to the manufacturing process of a semiconductor device, A tensile stress suitable for cutting both the semiconductor wafer processed so as to be separated into pieces and the die-bonding film 3 affixed to the semiconductor wafer along the dicing schedule line with good yield can be expressed. In addition, even in the room temperature expand process, it is possible to develop expandability capable of sufficiently securing the kerf width between the cut semiconductor chips.

[Etc]

As for the resin composition which comprises the said base film 1, other resin and various additives may be added as needed in the range which does not impair the effect of this invention. As said other resin, polyolefin, such as polyethylene and a polypropylene, ethylene-unsaturated carboxylic acid type copolymer, and polyether esteramide are mentioned, for example. Such other resin is, for example, 20 parts by mass or less with respect to 100 parts by mass in total of the resin (A) comprising the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (B). can be combined. Further, examples of the additive include an antistatic agent, antioxidant, heat stabilizer, light stabilizer, ultraviolet absorber, pigment, dye, lubricant, antiblocking agent, mildew inhibitor, antibacterial agent, flame retardant, flame retardant assistant, crosslinking agent, crosslinking assistant, foaming agent , foaming aids, inorganic fillers, fiber reinforcements, and the like. Such various additives are, for example, 5 parts by mass or less with respect to 100 parts by mass in total of the resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (B). can be combined.

[Tensile Stress of Base Film]

As for the said base film 1, the tensile stress at the time of 5% elongation in -15 degreeC MD direction (flow direction at the time of film forming of a base film) and TD direction (MD direction) of the base film 1 direction perpendicular to each other), it is in the range of 15.5 MPa or more and 28.5 MPa or less. By making the tensile stress at the time of 5% elongation at -15 degreeC of the base film 1 within the above range, the base film 1 is processed into the form of the dicing tape 10, and provided to the manufacturing process of a semiconductor device In the cool-expand process when performed, the internal stress generated by the tension in the entire direction of the dicing tape 10 is a semiconductor wafer processed so as to be able to be separated into pieces, and a die-bonding film 3 affixed to the semiconductor wafer. , may be an external stress of sufficient magnitude to easily cut along the line to be diced. In addition, even in the room temperature expand process, the kerf width between the cut semiconductor chips can be sufficiently secured. Moreover, the low-angle adhesive force of the dicing tape 10 with respect to the die-bonding film 3 after ultraviolet (UV) irradiation can be reduced appropriately. As a result, the dicing process WHEREIN: The cutting yield of the semiconductor chip which has the die-bonding film 3 can be improved. Moreover, in a pick-up process, induction of a pick-up miss can be suppressed. The said tensile stress becomes like this. Preferably it is the range of 16.0 MPa or more and 27.4 MPa or less, More preferably, it is the range of 17.3 MPa or more and 24.8 MPa or less.

[Thickness of base film]

Although the thickness of the said base film 1 is not specifically limited, When using as the dicing tape 10 is considered, it is preferable that it is the range of 70 micrometers or more and 120 micrometers or less, for example. More preferably, it is the range of 80 micrometers or more and 100 micrometers or less. When the thickness of the base film 1 is less than 70 micrometers and the dicing tape 10 is used for a dicing process, there exists a possibility that holding|maintenance of the ring frame (wafer ring) may become inadequate. Moreover, when the thickness of the base film 1 exceeds 120 micrometers, there exists a possibility that the curvature by opening|release of the residual stress at the time of film forming of the base film 1 may become large.

[Composition of base film]

The structure of the said base film 1 is not specifically limited, The single layer of a single resin composition may be sufficient, the laminated body which consists of multiple layers of the same resin composition may be sufficient, and the laminated body which consists of multiple layers of different resin compositions may be sufficient. Although the number of layers is not specifically limited in setting it as the laminated body which consists of multiple layers, It is preferable that it is the range of 2 or more layers and 5 or less layers.

When making the said base film 1 into the laminated body which consists of multiple layers, the structure in which the layer formed into a film using the resin composition of this embodiment was laminated|stacked may be sufficient, for example, and film forming using the resin composition of this embodiment The structure in which the layer formed into a film was laminated|stacked on the layer used as a film using other resin compositions other than the resin composition of this embodiment may be sufficient. However, the mass ratio (A):(B) of the resin (A) comprising the ionomer of the ethylene/unsaturated carboxylic acid-based copolymer to the polyamide resin (B) in the entire laminate is 72:28 to It needs to be adjusted to be in the 95:5 range.

The layer formed using the other resin composition is, for example, linear low-density polyethylene (LLDPE), low-density polyethylene (LDPE), ethylene-α-olefin copolymer, polypropylene, ethylene/unsaturated carboxylic acid copolymer, ethylene/ Unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymer, ethylene/unsaturated carboxylic acid alkyl ester copolymer, ethylene/vinyl ester copolymer, ethylene/unsaturated carboxylic acid alkyl ester/carbon monoxide copolymer, or unsaturated carboxylic acid graft The layer formed into a film using resin compositions, such as an ionomer (A) of the said ethylene-unsaturated carboxylic acid type copolymer, is selected from water, the blend which consists of a single-piece|unit or arbitrary plurality, is mentioned. Among these, from the viewpoint of adhesiveness and versatility of the resin layer made of a mixture of the resin (A) comprising the ionomer of the ethylene/unsaturated carboxylic acid copolymer of the present embodiment and the polyamide resin (B), ethylene/unsaturated carboxylic acid A main acid copolymer, an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester ternary copolymer, an ethylene/unsaturated carboxylic acid alkyl ester copolymer, and the ionomer of these copolymers are preferable.

As an example in the case where the base film 1 of this embodiment consists of laminated constitution, specifically, base films, such as the following two-layered constitution and three-layered constitution, are mentioned.

As a two-layer structure, for example,

(1) [Resin layer composed of a mixture of resin (A) and polyamide resin (B) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer of this embodiment: (AB-1)]/[this embodiment A resin layer comprising a mixture of a resin (A) comprising an ionomer of an ethylene/unsaturated carboxylic acid-based copolymer and a polyamide resin (B): (AB-1)],

(2) [Resin layer composed of a mixture of resin (A) and polyamide resin (B) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer of this embodiment: (AB-1)]/[this embodiment A resin layer comprising a mixture of a resin (A) comprising an ionomer of an ethylene/unsaturated carboxylic acid-based copolymer and a polyamide resin (B): (AB-2)],

(3) [Resin layer composed of resin (A) composed of the ionomer of the ethylene-unsaturated carboxylic acid copolymer: (A-1)]/[With the ionomer of the ethylene-unsaturated carboxylic acid-based copolymer of the present embodiment A resin layer comprising a mixture of a resin (A) and a polyamide resin (B) comprising: (AB-1)],

(4) [Resin layer composed of ethylene/unsaturated carboxylic acid copolymer: (C-1)]/[resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer of the present embodiment and polyamide resin A resin layer comprising a mixture of (B): (AB-1)],

The two-layer (1st layer / 2nd layer) structure which consists of the same resin layer or different types of resin layers, such as these, is mentioned.

As a three-layer structure, for example,

(5) [Resin layer composed of a mixture of resin (A) and polyamide resin (B) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer of this embodiment: (AB-1)]/[this embodiment A resin layer comprising a mixture of a resin (A) and a polyamide resin (B) comprising an ionomer of an ethylene/unsaturated carboxylic acid-based copolymer of: (AB-1)]/[the ethylene/unsaturated carboxylic acid-based copolymer of this embodiment A resin layer comprising a mixture of a resin (A) comprising an ionomer of a copolymer and a polyamide resin (B): (AB-1)];

(6) [Resin layer composed of a mixture of resin (A) and polyamide resin (B) composed of the ionomer of the ethylene/unsaturated carboxylic acid-based copolymer of the present embodiment: (AB-1)]/[this embodiment A resin layer comprising a mixture of a resin (A) and a polyamide resin (B) comprising an ionomer of an ethylene/unsaturated carboxylic acid copolymer of: (AB-2)]/[the ethylene/unsaturated carboxylic acid-based copolymer of this embodiment A resin layer comprising a mixture of a resin (A) comprising an ionomer of a copolymer and a polyamide resin (B): (AB-1)];

(7) [Resin layer comprising a mixture of resin (A) and polyamide resin (B) comprising the ionomer of the ethylene/unsaturated carboxylic acid copolymer of the present embodiment: (AB-1)]/[ethylene/unsaturated Resin layer comprising resin (A) comprising the ionomer of the carboxylic acid-based copolymer: (A-1)]/[resin (A) comprising the ionomer of the ethylene/unsaturated carboxylic acid-based copolymer of the present embodiment and poly A resin layer comprising a mixture of an amide resin (B): (AB-1)];

(8) [Resin layer composed of a mixture of resin (A) and polyamide resin (B) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer of the present embodiment: (AB-1)]/[ethylene/unsaturated Resin layer (C-1) composed of a carboxylic acid-based copolymer]/[A number composed of a mixture of a resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid-based copolymer of the present embodiment and a polyamide resin (B) Stratum: (AB-1)],

A three-layer (first layer/second layer/third layer) configuration comprising the same resin layer or different types of resin layers such as those can be mentioned.

[Method of forming base film]

As a film forming method of the base film 1 of this embodiment, the conventionally usual method is employable. A resin composition obtained by melt-kneading the ionomer resin (A) and the polyamide resin (B), if necessary, by adding other components, for example, a T-die-cast molding method, a T-die nip molding method, an inflation molding method, an extrusion lamination method, and a calender What is necessary is just to process into a film shape by various shaping|molding methods, such as a shaping|molding method. In addition, in the case of a laminate in which the base film 1 consists of multiple layers, each layer is separately formed by means such as a calender molding method, an extrusion method, an inflation molding method, etc. A laminate can be manufactured by laminating|stacking by a means. As said adhesive agent, the blend etc. which are chosen from the above-mentioned various ethylene copolymers, or these unsaturated carboxylic acid graft|grafted products are single-piece|unit or the blend which consists of arbitrary plurality, etc. are mentioned, for example. Moreover, the resin composition of each layer can also be extruded simultaneously by the coextrusion lamination method, and a laminated body can also be manufactured. In addition, corona treatment, plasma treatment, etc. may be given for the surface of the side which contact|connects the adhesive layer 2 of the base film 1 for the purpose of adhesive improvement with the adhesive layer 2 mentioned later. In addition, the surface on the opposite side to the surface on the side in contact with the pressure-sensitive adhesive layer 2 of the base film 1 is for the purpose of stabilizing the winding at the time of film forming of the base film 1 and preventing blocking after film forming. , embossing by a corrugation roll, etc. may be performed.

(Adhesive layer)

The adhesive layer 2 containing the active energy ray-curable adhesive composition which is the 2nd structural requirement in the dicing tape 10 of this invention is demonstrated below.

[Acrylic adhesive polymer]

The acrylic adhesive polymer contained as a main component in the active energy ray-curable adhesive composition is an acrylic adhesive polymer which has an active energy ray reactive carbon-carbon double bond and a hydroxyl group. It is preferable that it occupies 90 mass % or more, and, as for the said acrylic adhesive polymer, it is more preferable that it occupies 95 mass % or more in the total mass of an active energy ray-curable adhesive composition.

The active energy ray reactive carbon-carbon double bond and the acrylic adhesive polymer having a hydroxyl group will be described in detail later, but generally, as a base polymer, a (meth)acrylic acid alkyl ester monomer and a hydroxyl group-containing monomer are copolymerized to form a copolymer (a hydroxyl group-containing acrylic adhesive polymer). Adhesive polymer) is obtained, and a compound (active energy ray-reactive compound) having an isocyanate group capable of addition reaction with the hydroxyl group of the copolymer and a compound having a carbon-carbon double bond (active energy ray-reactive compound) is obtained by addition reaction.

As described above, the main chain (main skeleton) of the acrylic adhesive polymer having a hydroxyl group is a copolymer comprising at least a (meth)acrylic acid alkylester monomer and a hydroxyl group-containing monomer as a copolymer component. . And, in the acrylic adhesive polymer (copolymer) having a hydroxyl group, the copolymer composition is adjusted so that the glass transition temperature (Tg) of the main chain is in the range of -65°C or more and -50°C or less. Here, the glass transition temperature (Tg) is a theoretical value calculated from the formula of Fox shown in the following general formula (1) based on the composition of the monomer (monomer) component constituting the acrylic adhesive polymer.

1/Tg=W ₁ /Tg ₁ +W ₂ /Tg ₂ +...+W _n /Tg _n General formula (1)

[In the general formula (1), Tg is the glass transition temperature (unit: K) of the acrylic adhesive polymer, and Tg _i (i = 1, 2, ... n) is when the monomer i forms a homopolymer is the glass transition temperature (unit: K) of , and W _i (i = 1, 2, ... n) represents the mass fraction of the monomer i in all the monomer components.]

The glass transition temperature (Tg) of a homopolymer can be found, for example, in "Polymer Handbook" (edited by J. Brandrup and E. H. Immergut, Interscience Publishers).

When the glass transition temperature (Tg) of the main chain of the acrylic pressure-sensitive adhesive polymer (copolymer) having a hydroxyl group is less than -65° C., the pressure-sensitive adhesive layer 2 including the copolymers is excessively brittle, and pickup after UV irradiation Process WHEREIN: There exists a possibility that it may become difficult to peel the semiconductor chip which has a die-bonding film from the adhesive layer 2, and there exists a possibility that adhesive residue (contamination) may generate|occur|produce on the die-bonding film surface. As a result, the yield of non-defective semiconductor chips decreases. On the other hand, when the glass transition temperature (Tg) exceeds -50 ° C., since the toughness of the pressure-sensitive adhesive layer 2 including these decreases, wettability and followability to the die-bonding film 3 deteriorate, There is a fear that the initial adhesion to the die-bonding film 3 may deteriorate, or the impact force when the semiconductor wafer or the die-bonding film 3 is cut under low temperature is not sufficiently relieved, and the pressure-sensitive adhesive layer 2 and the die-bonding film 3 There is a fear that it becomes easy to propagate to the interface of As a result, in a cool expand process, it becomes easy to generate|occur|produce floating|lifting from the adhesive layer 2 of the die-bonding film 3, and the non-defective yield of a semiconductor chip falls. The said glass transition temperature (Tg) becomes like this. Preferably it is the range of -63 degreeC or more and -51 degrees C or less, More preferably, it is the range of -61 degreeC or more and -54 degrees C or less.

As said (meth)acrylic acid alkylester monomer, C6-C18 hexyl (meth)acrylate, n-octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, for example Acrylate, nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate, tri Decyl (meth) acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, octadecyl (meth) acrylate, or 5 carbon atoms Pentyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, ethyl (meth)acrylate, methyl (meth)acrylate etc. which are the following monomers are mentioned. Among these, it is preferable to use 2-ethylhexyl acrylate, and with respect to the total amount of the monomer components constituting the main chain of the acrylic adhesive polymer (copolymer) having a hydroxyl group, 40% by mass or more and 85% by mass or less. it is preferable

Moreover, as a hydroxyl-containing monomer, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl ( Meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl ( meth) acrylate and the like. The purpose of copolymerizing the hydroxyl group-containing monomer is, first, as an addition reaction point (-OH) for introducing an active energy ray-reactive carbon-carbon double bond to be described later by an addition reaction with respect to the acrylic adhesive polymer, second, In order to react with the isocyanate group (-NCO) of the polyisocyanate-based crosslinking agent to be described later to serve as a crosslinking reaction point for making the acrylic adhesive polymer high molecular weight, third, the pressure-sensitive adhesive layer 2 and the die bond film 3 after the crosslinking reaction As an active point (polar point) for improving the initial adhesion of As such, it is preferable to adjust the content of the hydroxyl monomer to a range of 15% by mass or more and 31% by mass or less with respect to the total amount of the copolymer monomer component. That is, adjusting the content of the hydroxyl group monomer in the copolymer within the above range is a structural requirement related to the pressure-sensitive adhesive composition of the present invention, the hydroxyl value of the acrylic pressure-sensitive adhesive polymer, and the isocyanate group ( It is easy to control the equivalence ratio (NCO/OH) of the hydroxyl group (OH) between NCO) and the hydroxyl group (OH) of the acrylic adhesive polymer, the residual hydroxyl group concentration after the crosslinking reaction, and the active energy ray-reactive carbon-carbon double bond concentration within the above-mentioned predetermined ranges. It is preferable, because

The acrylic adhesive polymer having an active energy ray reactive carbon-carbon double bond and a hydroxyl group is an isocyanate group and carbon capable of addition reaction with respect to the hydroxyl group in the side chain of the copolymer after copolymerizing the acrylic adhesive polymer having a hydroxyl group - Obtaining by a method of addition-reacting a compound having a carbon double bond (active energy ray-reactive compound) is most preferable from the viewpoints of easiness in tracking the reaction (stability of control) and technical difficulty. As a compound (active energy ray-reactive compound) which has such an isocyanate group and a carbon-carbon double bond, the isocyanate compound which has a (meth)acryloyloxy group is mentioned, for example. Specifically, 2-methacryloyloxyethyl isocyanate, 4-methacryloyloxy-n-butyl isocyanate, 2-acryloyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, etc. can be heard

In the said addition reaction, it is preferable to use a polymerization inhibitor so that the active energy ray reactivity of a carbon-carbon double bond may be maintained. As such a polymerization inhibitor, quinone-type polymerization inhibitors, such as hydroquinone monomethyl ether, are preferable. Although the quantity in particular of a polymerization inhibitor is not restrict|limited, Usually, it is preferable that it is the range of 0.01 mass part or more and 0.1 mass part or less with respect to 100 mass parts of acrylic adhesive polymers.

When performing the addition reaction, in order to crosslink the acrylic adhesive polymer with the polyisocyanate-based crosslinking agent added after (1), and to further increase the molecular weight, (2) the pressure-sensitive adhesive layer (2) after the crosslinking reaction and the die-bonding film ( In order to improve the initial adhesiveness with 3), it is necessary to make it allow a predetermined amount of hydroxyl groups to remain|survive in the adhesive composition after a crosslinking reaction. On the other hand, it is also necessary to control the active energy ray-reactive carbon-carbon double bond concentration within a predetermined range. It is necessary to consider both of these viewpoints. For example, when an isocyanate compound having a (meth)acryloyloxy group is reacted with a copolymer having a hydroxyl group in a side chain, as one standard, the (meth) ) The isocyanate compound having an acryloyloxy group is preferably subjected to an addition reaction using an amount in the range of 37 mol% or more and 85 mol% or less with respect to the hydroxyl group-containing monomer of the acrylic adhesive polymer.

In the acrylic adhesive polymer, in addition to the (meth)acrylic acid alkylester monomer and the hydroxyl group-containing monomer, other copolymerization monomer components may be copolymerized as necessary for the purpose of adjusting adhesive strength and glass transition temperature (Tg). Examples of such other copolymerization monomer components include carboxyl group-containing monomers such as (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid and isocrotonic acid, and acid anhydride group-containing monomers such as maleic anhydride and itaconic anhydride Monomer, (meth)acrylamide, N,N-dimethyl (meth)acrylamide, N-butyl (meth)acrylamide, N-methylol (meth)acrylamide, N-methylolpropane (meth)acrylamide, N -amide-based monomers such as methoxymethyl (meth)acrylamide and N-butoxymethyl (meth)acrylamide, (meth)acrylic acid aminoethyl, (meth)acrylic acid N,N-dimethylaminoethyl, (meth)acrylic acid t and monomers having functional groups such as amino group-containing monomers such as -butylaminoethyl and glycidyl group-containing monomers such as glycidyl (meth)acrylate. Although content in particular of the monomer which has such a functional group is not limited, It is preferable that it is the range of 0.5 mass % or more and 30 mass % or less with respect to copolymerization monomer component whole quantity.

When such a monomer having a functional group other than a hydroxyl group is copolymerized, an active energy ray-reactive carbon-carbon double bond may be introduced into the acrylic adhesive polymer using the functional group. For example, when the acrylic adhesive polymer has a carboxyl group in the side chain, a method of reacting with an active energy ray-reactive compound such as (meth)acrylic acid glycidyl or 2-(1-aziridinyl)ethyl (meth)acrylate; When the acrylic adhesive polymer has a glycidyl group in the side chain, an active energy ray reactive carbon-carbon double bond may be introduced into the acrylic adhesive polymer by a method of reacting with an active energy ray-reactive compound such as (meth)acrylic acid. have. However, in the case of copolymerizing a monomer having a functional group other than a hydroxyl group and introducing an active energy ray-reactive carbon-carbon double bond into the acrylic adhesive polymer using the functional group, as a standard, the content of the hydroxyl group-containing monomer to be copolymerized at the same time It is preferable to adjust silver to the range of 3 mass % or more and 15 mass % or less with respect to copolymer monomer component whole quantity. By doing so, the hydroxyl value of the acrylic adhesive polymer, the equivalence ratio (NCO/OH) of the isocyanate group (NCO) of the polyisocyanate-based crosslinking agent to be described later and the hydroxyl group (OH) of the acrylic adhesive polymer (NCO/OH), and the residual hydroxyl group concentration after the crosslinking reaction are described above. Since it becomes easy to control in a predetermined range, it is preferable.

In addition, for the purpose of cohesive force, heat resistance, etc., the acrylic adhesive polymer which has the said functional group may contain other copolymerization monomer components as needed within the range which does not impair the effect of this invention. As such other copolymerization monomer components, specifically, for example, cyano group-containing monomers such as (meth)acrylonitrile, olefinic monomers such as ethylene, propylene, isoprene, butadiene and isobutylene, styrene, α- Styrenic monomers such as methyl styrene and vinyltoluene, vinyl ester monomers such as vinyl acetate and vinyl propionate, vinyl ether monomers such as methyl vinyl ether and ethyl vinyl ether, halogen atom-containing monomers such as vinyl chloride and vinylidene chloride, Alkoxy group-containing monomers such as methoxyethyl (meth)acrylate and ethoxyethyl (meth)acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone , N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N- and monomers having a nitrogen atom-containing ring, such as (meth)acryloylmorpholine. These other copolymerization monomer components may be used independently and may be used in combination of 2 or more type.

In this embodiment, as a preferable copolymer which has the hydroxyl group which copolymerized the above-mentioned monomer, specifically, a binary copolymer of 2-ethylhexyl acrylate and 2-hydroxyethyl acrylate, 2-ethylhexyl acrylate, Ternary copolymer of 2-hydroxyethyl acrylate and methacrylic acid, terpolymer of 2-ethylhexyl acrylate and n-butyl acrylate and 2-hydroxyethyl acrylate, 2-ethylhexyl acrylate and methyl methacrylate Ternary copolymer of acrylic acid with 2-hydroxyethyl acrylate, quaternary copolymer of 2-ethylhexyl acrylate with n-butyl acrylate with 2-hydroxyethyl acrylate with methacrylic acid, 2-ethylhexyl acrylic acid with methacrylic acid Although a quaternary copolymer of methyl, 2-hydroxyethyl acrylate, and methacrylic acid, etc. are mentioned, It is not specifically limited to these. And, with respect to these preferred copolymers, as an isocyanate compound having a (meth)acryloyloxy group, 2-methacryloyloxyethyl isocyanate is subjected to an addition reaction to react with an active energy ray reactive carbon-carbon double bond and acrylic adhesive having a hydroxyl group. It is preferable to use a polymer.

The acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group thus obtained has a hydroxyl value in the range of 12.0 mgKOH/g or more and 55.0 mgKOH/g or less. When the hydroxyl value is less than 12.0 mgKOH/g, the residual hydroxyl group concentration after the crosslinking reaction in the pressure-sensitive adhesive composition decreases, and the initial adhesiveness of the pressure-sensitive adhesive layer 2 to the die-bonding film 3 may decrease. As a result, in a cool expand process, it becomes easy to generate|occur|produce floating|lifting from the adhesive layer 2 of the die-bonding film 3, and the non-defective yield of a semiconductor chip falls. On the other hand, when the hydroxyl value exceeds 55.0 mgKOH/g, the residual hydroxyl group concentration after the crosslinking reaction in the pressure-sensitive adhesive composition becomes excessively large, and the initial adhesiveness of the pressure-sensitive adhesive layer 2 to the die-bonding film 3 is more than necessary. is likely to grow into As a result, the pickup process after ultraviolet irradiation WHEREIN: It becomes difficult to peel the semiconductor chip which has a die-bonding film from the adhesive layer 2, and the pickup yield of a semiconductor chip falls. The said hydroxyl value becomes like this. Preferably it is the range of 12.7 mgKOH/g or more and 53.2 mgKOH/g or less, More preferably, it is the range of 17.0 mgKOH/g or more and 39.0 mgKOH/g or less.

In addition, the acrylic adhesive polymer having the active energy ray reactive carbon-carbon double bond and hydroxyl group preferably has an acid value in the range of 0 mgKOH/g or more and 9.0 mgKOH/g or less. If the acid value is within the above range, the effect of reducing the adhesive force of the pressure-sensitive adhesive layer 2 by ultraviolet irradiation is not prevented, and lifting of the die-bonding film 3 from the pressure-sensitive adhesive layer 2 in the cool expand step is suppressed. can do. The said acid value becomes like this. Preferably it is the range of 2.0 mgKOH/g or more and 8.2 mgKOH/g or less, More preferably, it is the range of 2.5 mgKOH/g or more and 5.5 mgKOH/g or less.

Further, the acrylic pressure-sensitive adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group preferably has a weight average molecular weight Mw in the range of 200,000 or more and 600,000 or less. When the weight average molecular weight Mw of the acrylic adhesive polymer is less than 200,000, it is difficult to obtain a solution of an active energy ray-curable acrylic adhesive composition having a high viscosity of several thousand cP or more and tens of thousands of cP or less in consideration of coatability and the like, which is not preferable. Moreover, when the cohesive force of the adhesive layer 2 before active energy ray irradiation becomes small and detachment|desorption of the semiconductor chip which has the die-bonding film 3 from the adhesive layer 2 after active energy ray irradiation, the die-bonding film 3 There is a risk of contaminating a semiconductor wafer having On the other hand, when the weight average molecular weight Mw exceeds 600,000, wettability and followability of the pressure-sensitive adhesive layer 2 to the die-bonding film 3 are lowered and initial adhesion is lowered. There is a possibility that the bond film 3 may float from the pressure-sensitive adhesive layer 2 . Here, the weight average molecular weight Mw means the standard polystyrene conversion value measured by gel permeation chromatography. The said weight average molecular weight Mw becomes like this. Preferably it is the range of 330,000 or more and 550,000 or less, More preferably, it is the range of 350,000 or more and 400,000 or less.

[Crosslinking agent]

The active energy ray-curable pressure-sensitive adhesive composition of the present embodiment further contains a polyisocyanate-based crosslinking agent in order to increase the molecular weight of the above-described active energy ray-reactive carbon-carbon double bond and the acrylic pressure-sensitive adhesive polymer having a hydroxyl group. As the polyisocyanate-based crosslinking agent, for example, a polyisocyanate compound having an isocyanurate ring, an adduct polyisocyanate compound in which trimethylolpropane and hexamethylene diisocyanate are reacted, and an adduct in which trimethylolpropane and tolylene diisocyanate are reacted A duct polyisocyanate compound, the adduct polyisocyanate compound which made trimethylol propane and xylylene diisocyanate react, the adduct polyisocyanate compound etc. which made trimethylol propane and isophorone diisocyanate react are mentioned. These can be used 1 type or in combination of 2 or more types. Among these, the adduct polyisocyanate compound which made trimethylol propane and tolylene diisocyanate react, and the adduct polyisocyanate compound which made trimethylol propane and hexamethylene diisocyanate react are used suitably from a versatility viewpoint.

The polyisocyanate-based crosslinking agent has a glass transition temperature (Tg) of the above-mentioned polymer main chain in the range of -65°C or more and -50°C or less, and the hydroxyl value is in the range of 12.0 mgKOH/g or more and 55.0 mgKOH/g or less, active energy With respect to the acrylic adhesive polymer having a linear reactive carbon-carbon double bond and a hydroxyl group, the equivalent ratio (NCO/OH) of the isocyanate group (NCO) of the polyisocyanate-based crosslinking agent to the hydroxyl group (OH) of the acrylic adhesive polymer is 0.02 The addition amount is adjusted so that it may become the range of more than 0.20 or less. Thus, by adjusting the addition amount of a polyisocyanate type crosslinking agent, the residual hydroxyl group density|concentration after the crosslinking reaction per 1 g of active energy ray-curable adhesive composition is controllable in 0.18 mmol or more and 0.90 mmol or less. In the present invention, "active energy ray-curable pressure-sensitive adhesive composition 1 g" means "1 g of a pressure-sensitive adhesive composition (solid content) excluding a photopolymerization initiator described later", that is, "a pressure-sensitive adhesive composition (solid content) composed of an acrylic adhesive polymer and a polyisocyanate-based crosslinking agent. ) 1g”. In addition, when an adhesive composition contains the other component mentioned later, another component is also added to the weight of an adhesive composition. The equivalence ratio (NCO/OH) is preferably in the range of 0.04 or more and 0.19 or less, and more preferably 0.07 or more and 0.14 or less.

Here, the equivalence ratio (NCO/OH) of the isocyanate group (NCO) of the polyisocyanate-based crosslinking agent and the hydroxyl group (OH) of the acrylic adhesive polymer is the content of the polyisocyanate-based crosslinking agent in the active energy ray-curable pressure-sensitive adhesive composition and The total number of moles of isocyanate groups calculated from the average number of isocyanate groups per molecule of the polyisocyanate-based crosslinking agent is the total number of moles of hydroxyl groups of the acrylic adhesive polymer after the active energy ray-reactive carbon-carbon double bond is introduced. It is a divided theoretical calculation value. The total number of moles of the hydroxyl groups is, for example, an isocyanate compound having a (meth)acryloyloxy group to introduce an active energy ray reactive carbon-carbon double bond to the acrylic adhesive polymer having a hydroxyl group as the base polymer. In the case of addition reaction, from the total number of moles of hydroxyl groups in the acrylic adhesive polymer serving as the base polymer, the number of moles of hydroxyl groups theoretically consumed by the crosslinking reaction with the isocyanate group of the isocyanate compound having an added (meth)acryloyloxy group (= It is the value which subtracted the number of moles of the isocyanate group of the isocyanate compound which has (meth)acryloyloxy group).

Similarly, the residual hydroxyl group concentration after the crosslinking reaction per 1 g of the active energy ray-curable pressure-sensitive adhesive composition is determined from the total number of moles of hydroxyl groups in the acrylic pressure-sensitive adhesive polymer having active energy ray-reactive carbon-carbon double bonds and hydroxyl groups. The value obtained by subtracting the number of moles of hydroxyl groups theoretically consumed by the crosslinking reaction with the isocyanate group of the isocyanate-based crosslinking agent (=number of moles of isocyanate groups in the crosslinking agent) is converted into 1 g of the active energy ray-curable pressure-sensitive adhesive composition.

When the equivalence ratio (NCO/OH) is less than 0.02, the cohesive force of the pressure-sensitive adhesive layer 2 becomes insufficient, and in the pickup step after ultraviolet irradiation, the semiconductor chip having the die-bonding film 3 is peeled from the pressure-sensitive adhesive layer 2 . There exists a possibility that it may become difficult to carry out, there exists a possibility that adhesive residue (contamination) may generate|occur|produce on the die-bonding film surface, and there exists a possibility that the cleavability of the die-bonding film 3 may worsen. In addition, especially when the hydroxyl value is large, the residual hydroxyl group concentration after the crosslinking reaction becomes too large, and the initial adhesion between the pressure-sensitive adhesive layer 2 and the die-bonding film 3 becomes larger than necessary, and in the pickup process after UV irradiation, die bonding There exists a possibility that the semiconductor chip which has the film 3 may become difficult to peel from the adhesive layer 2 . As a result, the non-defective yield of the semiconductor chip is lowered. On the other hand, when the equivalence ratio (NCO/OH) exceeds 0.20, the toughness after the crosslinking reaction of the pressure-sensitive adhesive layer 2 is excessively decreased depending on the size of the hydroxyl value, that is, it becomes too hard, and the pressure-sensitive adhesive layer 2 The wettability and followability to the die-bonding film 3 deteriorate, the initial adhesion to the die-bonding film 3 may deteriorate, and the impact force when the semiconductor wafer or the die-bonding film 3 is cut by cool expand cannot be sufficiently alleviated, and the impact force may easily propagate to the interface between the pressure-sensitive adhesive layer 2 and the die-bonding film 3 . As a result, in a cool expand process, it becomes easy to generate|occur|produce floating|lifting from the adhesive layer 2 of the die-bonding film 3, and the non-defective yield of a semiconductor chip falls.

When the equivalent ratio (NCO/OH) of the isocyanate group (NCO) of the polyisocyanate-based crosslinking agent to the hydroxyl group (OH) of the acrylic adhesive polymer is within the range of 0.02 or more and 0.20 or less, the glass transition temperature (Tg) of the polymer main chain Residue after crosslinking reaction per 1 g of active energy ray-curable pressure-sensitive adhesive composition containing as a main component an acrylic pressure-sensitive adhesive polymer having a range of -65°C or more and -50°C or less and a hydroxyl value of 12.0 mgKOH/g or more and 55.0 mgKOH/g or less It becomes easy to control a hydroxyl group concentration in the range of 0.18 mmol or more and 0.90 mmol or less. By doing so, interaction between the hydroxyl group and the silica filler on the surface of the die-bonding film 3 is increased, and the initial adhesion between the pressure-sensitive adhesive layer 2 and the die-bonding film 3 is appropriately improved, and further, the pressure-sensitive adhesive after crosslinking reaction An excessive decrease in toughness in the layer 2 itself can be suppressed, and tackiness and impact relaxation properties can be appropriately maintained. As a result, in the cool-expand process, floating|lifting of the die-bonding film 3 from the adhesive layer 2 is suppressed, and the non-defective yield of a semiconductor chip improves. The residual hydroxyl group concentration is preferably in the range of 0.29 mmol or more and 0.60 mmol or less, and more preferably 0.30 mmol or more and 0.37 mmol or less.

After forming the pressure-sensitive adhesive layer 2 with the active energy ray-curable pressure-sensitive adhesive composition, aging conditions for reacting the polyisocyanate-based crosslinking agent with the hydroxyl group-containing acrylic pressure-sensitive adhesive polymer are not particularly limited, but, for example, , the temperature may be appropriately set in the range of 23°C or more and 80°C or less, and the time may be appropriately set in the range of 24 hours or more and 168 hours or less.

[Photoinitiator]

The active energy ray-curable adhesive composition of this embodiment contains the photoinitiator which generate|occur|produces a radical by irradiation of an active energy ray. The photoinitiator generates radicals upon irradiation with active energy rays to the active energy ray-curable acrylic pressure-sensitive adhesive composition, and initiates a crosslinking reaction of carbon-carbon double bonds in the active energy ray-curable acrylic pressure-sensitive adhesive polymer.

It does not specifically limit as said photoinitiator, A conventionally well-known thing can be used. For example, an alkylphenone type radical polymerization initiator, an acylphosphine oxide type radical polymerization initiator, an oxime ester type radical polymerization initiator, etc. are mentioned. Examples of the alkylphenone radical polymerization initiator include a benzylmethyl ketal radical polymerization initiator, an α-hydroxyalkylphenone radical polymerization initiator, and an aminoalkylphenone radical polymerization initiator. Specific examples of the benzylmethyl ketal radical polymerization initiator include, for example, 2,2'-dimethoxy-1,2-diphenylethan-1-one (for example, trade name Omnirad 651, manufactured by IGM Resins B.V.) and the like. Specific examples of the α-hydroxyalkylphenone radical polymerization initiator include 2-hydroxy-2-methyl-1-phenylpropan-1-one (trade name: Omnirad 1173, manufactured by IGM Resins B.V.), 1- Hydroxycyclohexylphenyl ketone (trade name Omnirad 184, manufactured by IGM Resins B.V.), 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one ( Trade name Omnirad 2959, manufactured by IGM Resins B.V.), 2-hydroxy-1-{4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one (trade name) Omnirad 127, manufactured by IGM Resins B.V.) and the like. Specific examples of the aminoalkylphenone radical polymerization initiator include, for example, 2-methyl-1-(4-methylthiophenyl)-2-morpholinopropan-1-one (trade name Omnirad 907, manufactured by IGM Resins B.V. ) or 2-benzylmethyl 2-dimethylamino-1-(4-morpholinophenyl)-1-butanone (trade name: Omnirad 369, manufactured by IGM Resins B.V.) and the like. Specific examples of the acylphosphine oxide-based radical polymerization initiator include, for example, 2,4,6-trimethylbenzoyl-diphenylphosphine oxide (trade name: Omnirad TPO, manufactured by IGM Resins B.V.), bis(2,4,6) -Trimethylbenzoyl)-phenylphosphine oxide (trade name: Omnirad 819, manufactured by IGM Resins B.V.), as an oxime ester radical polymerization initiator, (2E)-2-(benzoyloxyimino)-1-[4-(phenylthio)phenyl ] octane-1-one (trade name: Omnirad OXE-01, manufactured by IGM Resins B.V.); and the like. These photoinitiators may be used independently and may be used in combination of 2 or more type.

As an addition amount of the said photoinitiator, it is preferable that it is the range of 0.1 mass part or more and 10.0 mass parts or less with respect to 100 mass parts of solid content of the said active energy ray-curable acrylic adhesive polymer. When the amount of the photopolymerization initiator added is less than 0.1 parts by mass, the photoreactivity to the active energy ray is not sufficient, so even when irradiated with active energy ray, the photoradical crosslinking reaction of the acrylic adhesive polymer does not sufficiently occur, and as a result, irradiation with active energy ray The adhesive force reduction effect in the later adhesive layer 2 may become small, and there exists a possibility that the pickup defect of a semiconductor chip may increase. On the other hand, when the addition amount of a photoinitiator exceeds 10.0 mass parts, the effect is saturated and it is unpreferable also from a viewpoint of economical efficiency. Moreover, depending on the kind of photoinitiator, the adhesive layer 2 may yellow and become an external appearance defect.

Moreover, as a sensitizer of such a photoinitiator, you may add compounds, such as dimethylamino ethyl methacrylate and 4-dimethylamino benzoate isoamyl, to an active energy ray-curable acrylic adhesive composition.

[Etc]

The active energy ray-curable adhesive composition of this embodiment is a range which does not impair the effect of this invention, WHEREIN: As needed, other active energy ray-curable compounds (For example, polyfunctional urethane acrylate type oligomer etc. ), tackifiers, fillers, antioxidants, colorants, flame retardants, antistatic agents, surfactants, silane coupling agents, and leveling agents may be added.

[Active energy ray reactive carbon-carbon double bond concentration]

Active energy ray-curable adhesive composition of this embodiment is adjusted so that active energy ray-reactive carbon-carbon double bond density|concentration may become the range of 0.85 mmol or more and 1.60 mmol or less per 1 g of active energy ray-curable adhesive composition. When the active energy ray-reactive carbon-carbon double bond concentration per 1 g of the active energy ray-curable pressure-sensitive adhesive composition is less than 0.85 mmol, the residual hydroxyl group concentration after the crosslinking reaction per 1 g of the above-mentioned active energy ray-curable pressure-sensitive adhesive composition is large, ultraviolet rays The adhesive force of the adhesive layer 2 after irradiation does not fully fall, but there exists a possibility that it may become difficult to peel the semiconductor chip which has the die-bonding film 3 from the adhesive layer 2 in a pick-up process. On the other hand, when the active energy ray-reactive carbon-carbon double bond concentration per 1 g of the active energy ray-curable pressure-sensitive adhesive composition exceeds 1.60 mmol, the residual hydroxyl group concentration after the crosslinking reaction per 1 g of the above-described active energy ray-curable pressure-sensitive adhesive composition It may become difficult to secure, and depending on the copolymer composition of the acrylic adhesive polymer, it tends to gel during polymerization or reaction during synthesis, making synthesis difficult in some cases. In addition, when confirming the carbon-carbon double bond content of an acrylic adhesive polymer, carbon-carbon double bond content can be computed by measuring the iodine value of an acrylic adhesive polymer.

When the active energy ray reactive carbon-carbon double bond concentration is within the range of 0.85 mmol or more and 1.60 mmol or less per 1 g of the active energy ray-curable pressure-sensitive adhesive composition, the initial adhesiveness of the pressure-sensitive adhesive layer 2 to the die bond film 3 and the pressure-sensitive adhesive Even when the pressure-sensitive adhesive layer 2 containing the active energy ray-curable pressure-sensitive adhesive composition having improved toughness of the layer 2 is applied, the adhesive force of the pressure-sensitive adhesive layer 2 after UV irradiation to the die-bonding film 3 is sufficient. It falls, and peeling (pickup property) from the adhesive layer 2 of the semiconductor chip which has the die-bonding film 3 becomes favorable. The active energy ray-reactive carbon-carbon double bond concentration is per 1 g of the active energy ray-curable pressure-sensitive adhesive composition, preferably in the range of 1.02 mmol or more and 1.51 mmol or less.

[Thickness of adhesive layer]

Although the thickness of the adhesive layer 2 of this embodiment is not specifically limited, It is preferable that it is the range of 5 micrometers or more and 50 micrometers or less, The range of 6 micrometers or more and 20 micrometers or less is more preferable, 7 micrometers or more and 15 micrometers or less A range of is particularly preferred. When the thickness of the adhesive layer 2 is less than 5 micrometers, there exists a possibility that the adhesive force of the dicing tape 10 may fall excessively. In this case, in a cool expand process, it becomes easy to generate|occur|produce floating|lifting from the adhesive layer 2 of the die-bonding film 3, and the non-defective yield of a semiconductor chip falls. Moreover, when using it as a dicing die-bonding film, the adhesiveness defect of the adhesive layer 2 and the die-bonding film 3 may generate|occur|produce. On the other hand, when the thickness of the pressure-sensitive adhesive layer 2 exceeds 50 µm, the internal stress generated when the dicing tape 10 is cool-expanded is applied to the semiconductor wafer having the die-bonding film 3 as external stress. There exists a possibility that it may become difficult to transmit, and in that case, in a dicing process, there exists a possibility that the cutting yield of the semiconductor chip which has the die-bonding film 3 may fall. Moreover, from a viewpoint of economical efficiency, it is not so preferable practically.

(Anchor coating layer)

In the dicing tape 10 of this embodiment, in the range which does not impair the effect of this invention, according to the manufacturing conditions of the dicing tape 10, use conditions of the dicing tape 10 after manufacture, etc., a base film Between (1) and the adhesive layer (2), you may provide the anchor-coat layer matched with the composition of the base film (1). By providing an anchor coating layer, the adhesive force of the base film 1 and the adhesive layer 2 improves.

(Releasable Liner)

In addition, you may provide a peeling liner in the surface side (one surface side) opposite to the base film 1 of the adhesive layer 2 as needed. Although it does not restrict|limit especially what can be used as a release liner, For example, synthetic resins, such as polyethylene, polypropylene, and polyethylene terephthalate, paper, etc. are mentioned. In addition, in order to improve the peelability of the adhesive layer 2, you may perform peeling treatment with a silicone type peeling agent, a long-chain alkyl type peeling agent, a fluorine type peeling agent, etc. on the surface of a release liner. Although the thickness of a release liner is not specifically limited, The thing in the range of 10 micrometers or more and 200 micrometers or less can be used suitably.

(Manufacturing method of dicing tape)

4 : is a flowchart explaining the manufacturing method of the dicing tape 10. As shown in FIG. First, a release liner is prepared (step S101: release liner preparation step). Next, the coating solution (coating solution for adhesive layer formation) for the adhesive layer 2 which is a forming material of the adhesive layer 2 is produced (step S102: coating solution manufacturing process). The coating solution can be produced, for example, by uniformly mixing and stirring the acrylic adhesive polymer, which is a component of the pressure-sensitive adhesive layer 2 , a crosslinking agent, and a diluent solvent. As a solvent, general-purpose organic solvents, such as toluene and ethyl acetate, can be used, for example.

Then, using the coating solution for the pressure-sensitive adhesive layer 2 prepared in step S102, the coating solution is applied on the release-treated surface of the release liner and dried to form the pressure-sensitive adhesive layer 2 having a predetermined thickness (step S102). S103: pressure-sensitive adhesive layer forming process). It does not specifically limit as a coating method, For example, it can apply|coat using a die coater, a comma coater (trademark), a gravure coater, a roll coater, a reverse coater, etc. In addition, although it does not specifically limit as drying conditions, For example, it is preferable to carry out within the range of 80 degreeC or more and 150 degrees C or less, and drying time within the range of 0.5 minutes or more and 5 minutes or less, for example. Then, the base film 1 is prepared (step S104: base film preparation process). And on the adhesive layer 2 formed on the release liner, the base film 1 is pasted together (step S105: base film pasting process). Finally, the formed pressure-sensitive adhesive layer 2 is aged for 72 hours under an environment of, for example, 40° C., and cross-linked and cured by reacting the acrylic pressure-sensitive adhesive polymer with the cross-linking agent (step S106: thermosetting process). The dicing tape 10 provided with the adhesive layer 2 and a peeling liner can be manufactured sequentially from the base film side on the base film 1 by the above process. In addition, in this invention, the laminated body provided with the release liner on the adhesive layer 2 may also be called the dicing tape 10.

In addition, as a method of forming the pressure-sensitive adhesive layer 2 on the base film 1 , a coating solution for the pressure-sensitive adhesive layer 2 is applied on a release liner and dried, and then on the pressure-sensitive adhesive layer 2 . Although the method of bonding the base film 1 was illustrated, you may use the method of apply|coating the coating solution for adhesive layers 2 directly on the base film 1, and drying. From the viewpoint of stable production, the former method is suitably used.

Although the detail of the said dicing tape 10 is mentioned later, the low-angle adhesive force (peel angle 30 degrees, peeling rate 600 mm/min after ultraviolet irradiation in 23 degreeC of the adhesive layer 2 with respect to the die-bonding film 3) ) is 0.95N/25mm or less, and the shear adhesive force (tensile rate 1,000mm/min) before ultraviolet irradiation at -30°C of the pressure-sensitive adhesive layer 2 to the die-bonding film 3 is 100.0N/100mm ² more preferably.

The dicing tape 10 of this embodiment may be the form wound in roll shape, or the form in which the wide sheet|seat is laminated|stacked. Moreover, the form of a sheet shape or tape shape formed by cutting|disconnecting the dicing tape 10 of these forms to a predetermined size may be sufficient.

<Dicing Die Bond Film>

According to the second aspect of the present invention, the dicing tape 10 of the present embodiment is a die-bonding film (adhesive layer) 3 on the pressure-sensitive adhesive layer 2 of the dicing tape 10 in the semiconductor manufacturing process. ) can also be used as the form of the dicing die-bonding film 20 in which peelable adhesion and lamination are possible. The die-bonding film (adhesive layer) 3 is for adhering and connecting a semiconductor chip cut into pieces by cool expand to a lead frame or a wiring board (support substrate). Moreover, when laminating|stacking semiconductor chips, it also serves as an adhesive bond layer between semiconductor chips. In this case, the first-stage semiconductor chip is adhered to the semiconductor chip mounting wiring board on which terminals are formed with a die-bonding film (adhesive layer) 3, and on the first-stage semiconductor chip, a die-bonding film (adhesive) The semiconductor chip of the 2nd stage is adhere|attached by layer) (3). The connection terminals of the first-stage semiconductor chip and the second-stage semiconductor chip are electrically connected to an external connection terminal via a wire, but the first-stage semiconductor chip wire is a die-bonding film (adhesive) at the time of crimping (die bonding). layer) 3, that is, embedded in the wire-embedded die-bonding film (adhesive layer) 3 described above. Hereinafter, although an example is shown about the die-bonding film (adhesive layer) 3 in the case of using the dicing tape 10 of this embodiment as the form of the dicing die-bonding film 20, it is limited to this example in particular it is not going to be

(die bond film)

The die-bonding film (adhesive layer) 3 is a layer made of a thermosetting adhesive composition that is cured by heat. It does not specifically limit as said adhesive composition, A conventionally well-known material can be used. As an example of a preferred aspect of the adhesive composition, for example, a (meth)acrylic acid ester copolymer containing a glycidyl group as a thermoplastic resin, an epoxy resin as a thermosetting resin, and a resin composition containing a phenol resin as a curing agent for the epoxy resin The thermosetting adhesive composition in which a hardening accelerator, an inorganic filler, a silane coupling agent, etc. are added to this is mentioned. The die-bonding film (adhesive layer) 3 made of such a thermosetting adhesive composition is excellent in adhesion between semiconductor chips/support substrates and between semiconductor chips/semiconductor chips, and also provides electrode embedding properties and/or wire embedding properties, etc. It is possible, and in the die bonding process, it is possible to bond at a low temperature, and excellent curing is obtained in a short time, and it has excellent reliability after being molded with a sealing agent, so it is preferable.

The general-purpose die-bonding film used in the form in which the wire is not embedded in the adhesive layer and the wire-embedded die-bonding film used in the form in which the wire is embedded in the adhesive layer are approximately the same as for the type of material constituting the adhesive composition Although there are many, it can be customized as a general-purpose die-bonding film or a wire-embedded die-bonding film by changing the blending ratio of the materials to be used, the physical properties and characteristics of individual materials, etc. according to each purpose. Moreover, when there is no problem in reliability as a final semiconductor device, a wire-embedded die-bonding film may be used as a general-purpose die-bonding film. That is, the wire-embedded die-bonding film is not limited to wire-embedded applications, and can be similarly used for bonding semiconductor chips to metal substrates such as substrates and lead frames having irregularities due to wiring or the like.

(Adhesive composition for universal die-bonding film)

First, although an example of the adhesive composition for general-purpose die-bonding films is demonstrated, it is not limited to this example in particular. As an index of the fluidity at the time of die bonding of the die-bonding film 3 formed of the adhesive composition, for example, shear viscosity characteristics at 80°C are mentioned, but in the case of a general-purpose die-bonding film, generally at 80°C The shear viscosity of represents a value in the range of 20,000 Pa·s or more and 40,000 Pa·s or less, preferably 25,000 Pa·s or more and 35,000 Pa·s or less. As an example of a preferred aspect of the adhesive composition for a general-purpose die-bonding film, the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin, which is a resin component of the adhesive composition, is 100 parts by mass based on the In one case, (a) the range of 52 parts by mass or more and 90 parts by mass or less of the glycidyl group-containing (meth)acrylic acid ester copolymer, 5 parts by mass or more and 25 parts by mass or less of the epoxy resin, 5 of the phenol resin In the range of not less than 23 parts by mass and not more than 23 parts by mass, the total amount of the resin component is adjusted to 100 parts by mass, and (b) 0.1 parts by mass or more 0.3 parts by mass of the curing accelerator with respect to 100 parts by mass of the total amount of the epoxy resin and the phenol resin. (c) 5 parts by mass or more and 20 parts by mass relative to 100 parts by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin. The adhesive composition contained in the following ranges is mentioned.

[Glycidyl group-containing (meth)acrylic acid ester copolymer]

The glycidyl group-containing (meth)acrylic acid ester copolymer preferably contains, as a copolymer unit, at least (meth)acrylic acid alkyl ester and (meth)acrylic acid glycidyl having an alkyl group having 1 to 8 carbon atoms. The copolymer unit of glycidyl (meth)acrylate is preferably included in the range of 0.5 mass % or more and 6.0 mass % or less in the total amount of the glycidyl group-containing (meth) acrylic acid ester copolymer from the viewpoint of ensuring proper adhesion. And, it is more preferable to include in the range of 2.0 mass % or more and 4.0 mass % or less. In addition, the glycidyl group-containing (meth)acrylic acid ester copolymer may contain other monomers, such as styrene and acrylonitrile, as a copolymer unit from a viewpoint of adjustment of a glass transition temperature (Tg) as needed.

The glass transition temperature (Tg) of the glycidyl group-containing (meth)acrylic acid ester copolymer is preferably in the range of -50°C or more and 30°C or less, and from the viewpoint of improving handleability as a die-bonding film (suppression of tack) , It is more preferable that it is the range of -10 degreeC or more and 30 degrees C or less. In order to set the glycidyl group-containing (meth)acrylic acid ester copolymer to such a glass transition temperature, as the (meth)acrylic acid alkyl ester having an alkyl group having 1 to 8 carbon atoms, ethyl (meth)acrylate and/or butyl (meth) ) It is preferable to use an acrylate.

It is preferable that it is the range of 500,000 or more and 2 million or less, and, as for the weight average molecular weight Mw of the said glycidyl group containing (meth)acrylic acid ester copolymer, it is more preferable that it is the range of 700,000 or more and 1 million or less. When the weight average molecular weight Mw is in the above range, it is easy to make the adhesive force, heat resistance, and flow property appropriate. Here, the weight average molecular weight Mw means the standard polystyrene conversion value measured by gel permeation chromatography.

The content ratio of the glycidyl group-containing (meth)acrylic acid ester copolymer in the die-bonding film (adhesive layer) 3 is the glycidyl group-containing (meth)acrylic acid ester copolymer as a resin component in the adhesive composition and When the total amount of the epoxy resin and the phenol resin described later is 100 parts by mass as a reference, it is preferably in the range of 52 parts by mass or more and 90 parts by mass or less, and more preferably in the range of 60 parts by mass or more and 80 parts by mass or less.

[Epoxy Resin]

Although it does not specifically limit as an epoxy resin, For example, bisphenol A epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac type epoxy resin , Alkylphenol novolak epoxy resin, cresol novolak epoxy resin, bisphenol A novolak epoxy resin, diglycidyl ether of biphenol, diglycidyl ether of naphthalenediol, diglycidyl of phenols Difunctional epoxy resins, such as diglycidyl ether products of diglycidyl ether products, and these alkyl-substituted products, halides, and hydrogenated substances, and novolak-type epoxy resins are mentioned. Moreover, you may use other generally known epoxy resins, such as a polyfunctional epoxy resin and a heterocyclic-containing epoxy resin. These may be used independently and may be used in combination of 2 or more type.

It is preferable that the softening point of the said epoxy resin is the range of 70 degreeC or more and 130 degrees C or less from a viewpoint of adhesive force and heat resistance. Moreover, it is preferable that the epoxy equivalent of the said epoxy resin is the range of 100 or more and 300 or less from a viewpoint of fully advancing hardening reaction with the phenol resin mentioned later.

The content ratio of the epoxy resin in the die-bonding film (adhesive layer) 3 is in the die-bonding film (adhesive layer) 3 from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the adhesive composition When the total amount of the resin component, the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin to be described later is 100 parts by mass as a reference, it is preferably in the range of 5 parts by mass or more and 25 parts by mass or less. , It is more preferable that it is the range of 10 mass parts or more and 20 mass parts or less.

[Phenolic resin: curing agent for epoxy resin]

Although it does not specifically limit as a hardening|curing agent with respect to an epoxy resin, For example, a phenol resin which can be obtained by making a phenol compound and the xylylene compound which is a divalent linking group react in the presence of an acid catalyst without a catalyst is mentioned. As said phenol resin, polyoxystyrene, such as a novolak-type phenol resin, a resol-type phenol resin, and polyparaoxystyrene, etc. are mentioned, for example. As a novolak-type phenol resin, a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, tert- butylphenol novolak resin, a nonylphenol novolak resin, etc. are mentioned, for example. These phenol resins may be used independently and may be used in combination of 2 or more type. Among these phenol resins, phenol novolac resin and phenol aralkyl resin are preferably used because they tend to improve the connection reliability of the die-bonding film (adhesive layer) 3 .

It is preferable that the softening point of the said phenol resin is the range of 70 degreeC or more and 90 degrees C or less from a viewpoint of adhesive force and heat resistance. Moreover, it is preferable that the range of the hydroxyl equivalent of the said phenol resin is 100 or more and 200 or less from a viewpoint of fully advancing hardening reaction with an epoxy resin.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the thermosetting resin composition, in the phenol resin, per equivalent of epoxy groups in all the epoxy resin components, the hydroxyl groups in all the phenol resin components are preferably 0.5 It is preferable to mix|blend in the amount used as the range of equivalent or more and 2.0 equivalents or less, More preferably, 0.8 equivalent or more and 1.2 equivalents or less. Since it varies depending on the functional group equivalent of each resin, it cannot be said uniformly, but for example, the content ratio of the phenol resin is the glycidyl group-containing (meth)acrylic acid ester copolymer and the epoxy as a resin component in the adhesive composition. When the total amount of resin and the said phenol resin is 100 mass parts of a reference|standard, it is preferable that it is the range of 5 mass parts or more and 23 mass parts or less.

[curing accelerator]

Moreover, hardening accelerators, such as a tertiary amine, imidazole, and quaternary ammonium salt, can be added to the said thermosetting resin composition as needed. Specifically as such a curing accelerator, for example, 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl -2-phenylimidazolium trimellitate etc. are mentioned, These may be used independently and may be used in combination of 2 or more type. It is preferable that the addition amount of the said hardening accelerator is the range of 0.1 mass part or more and 0.3 mass part or less with respect to a total of 100 mass parts of the said epoxy resin and the said phenol resin.

[Inorganic Filler]

Furthermore, an inorganic filler can be added to the said thermosetting resin composition as needed from a viewpoint of controlling the fluidity|liquidity of the die-bonding film (adhesive layer) 3 and improving an elastic modulus. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. etc. are mentioned, These can also use 1 type or 2 or more types together. Among these, crystalline silica, amorphous silica, etc. are used suitably from a viewpoint of versatility. Specifically, for example, Aerosil (registered trademark: ultrafine particle fumed silica) having an average particle diameter of nano size is preferably used. The content ratio of the inorganic filler in the die-bonding film (adhesive layer) 3 is based on the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin as the above-mentioned resin component. When it is set as 100 mass parts of, it is preferable that it is the range of 5 mass parts or more and 20 mass parts or less.

[Silane coupling agent]

Moreover, a silane coupling agent can be added to the said thermosetting resin composition as needed from a viewpoint of improving the adhesive force with respect to a to-be-adhered body. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. and these can also use 1 type or 2 or more types together. It is preferable that the range of the addition amount of the said silane coupling agent is 1.0 mass part or more and 7.0 mass parts or less with respect to a total of 100 mass parts of the said epoxy resin and the said phenol resin.

[Etc]

Moreover, you may add a flame retardant, an ion trapping agent, etc. to the said thermosetting resin composition in the range which does not impair the function as a die-bonding film. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, hydrous antimony oxide, zirconium phosphate having a specific structure, magnesium silicate, aluminum silicate, triazole compounds, tetrazole compounds, and bipyridyl compounds. have.

(Adhesive composition for wire-embedded die-bonding film)

Then, although an example of the adhesive composition for wire-embedded die-bonding films is demonstrated, it is not limited to this example in particular. As an index of the fluidity at the time of die bonding of the die-bonding film 3 formed of the adhesive composition, for example, shear viscosity characteristics at 80°C are mentioned, but in the case of a wire-embedded die-bonding film, generally 80°C The shear viscosity in is in a range of 200 Pa·s or more and 11,000 Pa·s or less, preferably a value in a range of 2,000 Pa·s or more and 7,000 Pa·s or less. As an example of a preferred aspect of the adhesive composition for a wire-embedded die-bonding film, 100 mass based on the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer as a resin component of the adhesive composition, the epoxy resin, and the phenol resin (a) 17 parts by mass or more and 51 parts by mass or less of the glycidyl group-containing (meth)acrylic acid ester copolymer, 30 parts by mass or more and 64 parts by mass or less of the epoxy resin, the phenol resin In the range of 19 parts by mass or more and 53 parts by mass or less, the total amount of the resin component is adjusted to 100 parts by mass, and (b) 0.01 parts by mass or more of the curing accelerator with respect to 100 parts by mass of the total amount of the epoxy resin and the phenol resin. (c) 10 parts by mass or more and 80 parts by mass based on 100 parts by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin, including in the range of 0.07 parts by mass or less; The adhesive composition contained in the range of less than part is mentioned.

[Glycidyl group-containing (meth)acrylic acid ester copolymer]

The glycidyl group-containing (meth)acrylic acid ester copolymer preferably contains, as a copolymer unit, at least (meth)acrylic acid alkyl ester and (meth)acrylic acid glycidyl having an alkyl group having 1 to 8 carbon atoms. In the case of a wire-embedded die-bonding film, it is necessary to achieve both improvement of fluidity during die bonding and securing of adhesive strength after curing. It is preferable to use in combination with a diyl group-containing (meth)acrylic acid ester copolymer (A) and a glycidyl group-containing (meth)acrylic acid ester copolymer (B) having a low copolymer unit ratio of (meth)acrylic acid glycidyl and a high molecular weight and it is preferable that the former component (A) is contained in a certain amount or more during the combined use.

That is, the glycidyl group-containing (meth)acrylic acid ester copolymer in the adhesive composition for a wire-embedded die-bonding film is specifically, "(meth)acrylic acid glycidyl copolymer unit containing a glycidyl group ( In the total amount of the meth)acrylic acid ester copolymer, 5.0 mass% or more and 15.0 mass% or less are included, the glass transition temperature (Tg) is in the range of -50 °C or more and 30 °C or less, and the weight average molecular weight Mw is 100,000 or more and 40 In the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer (A)" and "(meth)acrylic acid glycidyl copolymer unit, Glycidyl group containing in the range of 1.0 mass % or more and 7.0 mass % or less, the glass transition temperature (Tg) is in the range of -50 ° C. or more and 30 ° C. or less, and the weight average molecular weight Mw is in the range of 500,000 or more and 900,000 or less. It is preferable to consist of a mixture with "(meth)acrylic acid ester copolymer (B)." Here, the weight average molecular weight Mw means the standard polystyrene conversion value measured by gel permeation chromatography.

The content ratio of the glycidyl group-containing (meth)acrylic acid ester copolymer (A) is 60% by mass or more and 90% by mass in the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer (sum of (A) and (B)) % or less is preferred. In addition, the glycidyl group-containing (meth)acrylic acid ester copolymer may contain other monomers, such as styrene and acrylonitrile, as a copolymer unit from a viewpoint of adjustment of a glass transition temperature (Tg) as needed.

The glass transition temperature (Tg) of the glycidyl group-containing (meth)acrylic acid ester copolymer as a whole is preferably in the range of -50°C or more and 30°C or less, from the viewpoint of improving handleability as a die-bonding film (tackiness suppression). In, it is more preferable that it is in the range of -10°C or more and 30°C or less. In order to set the glycidyl group-containing (meth)acrylic acid ester copolymer to such a glass transition temperature, as the (meth)acrylic acid alkyl ester having an alkyl group having 1 to 8 carbon atoms, ethyl (meth)acrylate and/or butyl (meth) ) It is preferable to use an acrylate.

The content ratio of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer (total of (A) and (B)) in the wire-embedded die-bonding film (adhesive layer) 3 is the fluidity at the time of die bonding And from the viewpoint of adhesive strength after curing, when the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer as a resin component in the adhesive composition and the epoxy resin and phenol resin to be described later is 100 parts by mass based on the standard, 17 parts by mass It is preferable that it is the range of 51 mass parts or less, and it is more preferable that it is the range of 20 mass parts or more and 45 mass parts or less.

[Epoxy Resin]

Although it does not specifically limit as an epoxy resin, The thing similar to what was illustrated as the epoxy resin for the adhesive composition for general-purpose die-bonding films mentioned above can be used. Although these may be used individually or in combination of 2 or more types, in the case of a wire-embedded die-bonding film, while ensuring adhesive strength and suppressing generation|occurrence|production of the void in an adhesive surface, good embedding property of a wire Since it is necessary to provide, in controlling the fluidity and elastic modulus, it is preferable to use two or more types of epoxy resins in combination.

As a preferred aspect of the epoxy resin used for the wire-embedded die-bonding film (adhesive layer) 3, a mixture of an epoxy resin (C) liquid at room temperature and an epoxy resin (D) having a softening point of 98°C or less, preferably 85°C or less can be said to consist of It is preferable that the content rate of the epoxy resin (C) liquid at normal temperature is in the range of 15 mass % or more and 75 mass % or less in the total amount of the epoxy resin (sum of (C) and (D)), 30 mass % or more It is more preferable that it is the range of 50 mass % or less. It is preferable that the epoxy equivalent of the said epoxy resin is the range of 100 or more and 300 or less from a viewpoint of fully advancing hardening reaction with the phenol resin mentioned later.

The content ratio of the epoxy resin in the die-bonding film (adhesive layer) 3 is in the die-bonding film (adhesive layer) 3 from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the adhesive composition When the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer as a resin component, the epoxy resin, and a phenol resin to be described later is 100 parts by mass as a reference, it is preferably in the range of 30 parts by mass or more and 64 parts by mass or less. It is more preferable that it is the range of 35 mass parts or more and 50 mass parts or less.

[Phenolic resin: curing agent for epoxy resin]

Although it does not specifically limit as a hardening|curing agent with respect to an epoxy resin, The thing similar to the thing of an illustration can be used similarly as a phenol resin for the adhesive composition for general-purpose die-bonding films mentioned above. It is preferable that the softening point of the said phenol resin is the range of 70 degreeC or more and 115 degrees C or less from a viewpoint of adhesive force and fluidity|liquidity. Moreover, it is preferable that the range of the hydroxyl equivalent of the said phenol resin is 100 or more and 200 or less from a viewpoint of fully advancing hardening reaction with an epoxy resin.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the thermosetting resin composition, in the phenol resin, per equivalent of epoxy groups in all the epoxy resin components, the hydroxyl groups in all the phenol resin components are preferably 0.5 It is preferable to mix|blend in the amount used as the range more preferably 0.6 equivalent or more and 1.0 equivalent or less from a viewpoint of compatibility with the fluidity|liquidity at the time of equivalent or more and 2.0 equivalents or less at the time of die bonding. Since it varies depending on the functional group equivalent of each resin, it cannot be said uniformly, but for example, the content ratio of the phenol resin is the glycidyl group-containing (meth)acrylic acid ester copolymer and the epoxy as a resin component in the adhesive composition. When the total amount of resin and the said phenol resin is 100 mass parts of a reference|standard, it is preferable that it is the range of 19 mass % or more and 53 mass % or less.

[curing accelerator]

Moreover, hardening accelerators, such as a tertiary amine, imidazole, and quaternary ammonium salt, can be added to the said thermosetting resin composition as needed. As such a hardening accelerator, the thing similar to what was illustrated as the hardening accelerator for adhesive compositions for general-purpose die-bonding films mentioned above can be used similarly. The amount of the curing accelerator added is preferably in the range of 0.01 parts by mass or more and 0.07 parts by mass or less with respect to 100 parts by mass in total of the epoxy resin and the phenol resin from the viewpoint of suppressing the occurrence of voids on the adhesive surface. .

[Inorganic Filler]

Furthermore, in the thermosetting resin composition, improvement of handleability of the die-bonding film (adhesive layer) 3, adjustment of fluidity at the time of die bonding, provision of thixotropic properties, improvement of adhesive strength, etc. from the viewpoint of, if necessary, inorganic Fillers may be added. As an inorganic filler, although the thing similar to what was illustrated as an inorganic filler for the adhesive composition for general-purpose die-bonding films mentioned above can be used similarly, a silica filler is used suitably from a viewpoint of versatility among these. The content ratio of the inorganic filler in the die-bonding film (adhesive layer) 3 is, from the viewpoint of fluidity at the time of die bonding, severability at the time of cool expansion, and adhesive strength, the above-mentioned resin component glycy. When the total amount of the diyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin is 100 parts by mass as a reference, it is preferably in the range of 10% by mass or more and 80% by mass or less, and 15% by mass or more and 50% by mass or less The range of is more preferable.

Mixing two or more types of inorganic fillers having different average particle diameters for the purpose of improving the cleavability of the die-bonding film (adhesive layer) 3 at the time of cool expansion and sufficiently expressing the adhesive force after curing as the inorganic filler desirable. Specifically, it is preferable to use an inorganic filler having an average particle diameter in the range of 0.1 µm or more and 5 µm or less as the main inorganic filler component accounting for 80% by mass or more based on the total mass of the inorganic filler. When it is necessary to suppress the foaming of the adhesive layer 3 in the semiconductor chip manufacturing process by the fluidity|liquidity of the die-bonding film (adhesive layer) 3 becoming high excessively, or to improve the adhesive strength after hardening, an average particle diameter is 0.1 micrometer You may use less than inorganic filler together with said main inorganic filler component in the compounding quantity of 20 mass % or less on the basis of the total mass of an inorganic filler.

[Silane coupling agent]

Moreover, a silane coupling agent can be added to the said thermosetting resin composition as needed from a viewpoint of improving the adhesive force with respect to a to-be-adhered body. As a silane coupling agent, the thing similar to what was illustrated as a silane coupling agent for the adhesive composition for general-purpose die-bonding films mentioned above can be used similarly. The amount of the silane coupling agent added is preferably in the range of 0.5 parts by mass or more and 2.0 parts by mass or less with respect to 100 parts by mass in total of the epoxy resin and the phenol resin from the viewpoint of suppressing the generation of voids on the adhesive surface. do.

[Etc]

Moreover, you may add a flame retardant, an ion trapping agent, etc. to the said thermosetting resin composition in the range which does not impair the function as the die-bonding film 3 . As these flame retardants and ion trapping agents, the thing similar to what was illustrated as the flame retardant for adhesive compositions for general-purpose die-bonding films mentioned above, and an ion trapping agent can be used similarly.

(Thickness of die bond film (adhesive layer))

The thickness of the die-bonding film (adhesive layer) 3 is not particularly limited, but in order to ensure adhesive strength, to properly embed the wire for semiconductor chip connection, or to sufficiently fill the unevenness of the wiring circuit of the substrate, etc. For this reason, it is preferable that the range is 5 µm or more and 200 µm or less. When the thickness of the die-bonding film (adhesive layer) 3 is less than 5 µm, there is a possibility that the adhesive force between the semiconductor chip and the lead frame, the wiring board, or the like becomes insufficient. On the other hand, when the thickness of the die-bonding film (adhesive layer) 3 exceeds 200 micrometers, it becomes uneconomical, and also it becomes easy to respond to the miniaturization and thin film reduction of a semiconductor device inadequately. In addition, the film thickness of the film adhesive is more preferably in the range of 10 µm or more and 100 µm or less, and particularly preferably in the range of 20 µm or more and 75 µm or less, from the viewpoint of high adhesiveness and thickness reduction of the semiconductor device. do.

More specifically, as a thickness in the case of using as a general-purpose die-bonding film (adhesive layer), for example, the range of 5 micrometers or more and less than 30 micrometers, especially the range of 10 micrometers or more and 25 micrometers or less is preferable, and a wire embedded die As thickness in the case of using as a bond film (adhesive agent layer), it is preferable that it is the range of 30 micrometers or more and 100 micrometers or less, for example, Especially the range of 40 micrometers or more and 80 micrometers or less.

(Manufacturing method of die bond film)

The said die-bonding film (adhesive adhesive layer) 3 is manufactured as follows, for example. First, a release liner is prepared. In addition, as the said release liner, the thing similar to the release liner arrange|positioned on the adhesive layer 2 of the dicing tape 10 can be used. Next, the coating solution for the die-bonding film (adhesive adhesive layer) 3 which is a forming material of the die-bonding film (adhesive adhesive layer) 3 is produced. The coating solution is, for example, a glycidyl group-containing (meth)acrylic acid ester copolymer, which is a component of the die-bonding film (adhesive layer) 3 as described above, an epoxy resin, a curing agent for the epoxy resin, an inorganic filler , a curing accelerator, a silane coupling agent, and the like can be produced by uniformly mixing and dispersing the thermosetting resin composition and the diluent solvent. As a solvent, general-purpose organic solvents, such as methyl ethyl ketone and cyclohexanone, can be used, for example.

Next, the application solution for the die-bonding film (adhesive layer) 3 is applied on the release-treated surface of the release liner serving as a temporary support and dried, and a die-bonding film (adhesive agent) having a predetermined thickness is applied. layer) (3) is formed. Then, the peeling process surface of another peeling liner is pasted together on the die-bonding film (adhesive agent layer) 3 . It does not specifically limit as a coating method, For example, it can apply|coat using a die coater, a comma coater (trademark), a gravure coater, a roll coater, a reverse coater, etc. In addition, as drying conditions, for example, it is preferable to carry out within the range of 60 degreeC or more and 200 degrees C or less of drying temperature, and drying time within the range of 1 minute or more and 90 minutes or less. Moreover, in this invention, the laminated body provided with the release liner on both surfaces or single side|surface of the die-bonding film (adhesive layer) 3 may also be called the die-bonding film (adhesive layer) 3 in some cases.

The low-angle adhesive force after ultraviolet irradiation at 23° C. of the pressure-sensitive adhesive layer 2 of the dicing tape 10 to the die-bonding film 3 is from the viewpoint of improving pickup properties, preferably 0.95 N/25 mm Hereinafter, more preferably, it is 0.85 N/25 mm or less, More preferably, it is 0.70 N/25 mm or less. The low-angle adhesive force after UV irradiation is preferably smaller as it is smaller from the viewpoint of improving pickup performance, but in the step before picking up the semiconductor chip 30a having the die-bonding film 3 from the dicing tape 10, From the viewpoint that the semiconductor chip 30a having the die-bonding film 3 unintentionally peels off or shifts from the dicing tape 10 can be suppressed, and pickup can be performed better, 0.05 N/ It is preferable that it is 25 mm or more. In addition, the shear adhesive force before ultraviolet irradiation in -30 degreeC of the adhesive layer 2 of the said dicing tape 10 with respect to the said die-bonding film 3 is the dicing of the die-bonding film 3 after expansion. From a viewpoint of coexistence of suppression of partial peeling (float|lifting) from the adhesive layer 2 of the tape 10, and a pick-up property improvement, Preferably it is 100.0N/100mm< ² > or more, More preferably, it is 105.0N/100mm. It is the range of ² or more and 140N/100mm2 or less, More preferably, it is the range ^{of 107.7N} /100mm2 or more and ^123.0N /100mm2 or less.

In addition, the low-angle adhesive force after ultraviolet irradiation at 23 ° C. of the pressure-sensitive adhesive layer 2 of the dicing tape 10 to the die-bonding film 3 and the shear adhesive force before ultraviolet irradiation at -30 ° C. are, respectively , can be measured using the test method described in Examples. In addition, in the shear adhesive force measurement test before ultraviolet irradiation, the failure mode may be cohesive failure of the said adhesive bond layer unless it interferes with pick-up property.

(Manufacturing method of dicing die-bonding film)

Although it does not specifically limit as a manufacturing method of the said dicing die-bonding film 20, It can manufacture by a conventionally well-known method. For example, in the dicing die-bonding film 20 , first, the dicing tape 10 and the die-bonding film 20 are separately prepared, and then, the pressure-sensitive adhesive layer 2 of the dicing tape 10 . and the release liner of the die-bonding film (adhesive layer) 3 are respectively peeled off, and the pressure-sensitive adhesive layer 2 and the die-bonding film (adhesive layer) 3 of the dicing tape 10 are, for example, a hot roll What is necessary is just to press-bond by crimping rolls, such as a laminator, and to stick together. It is not specifically limited as bonding temperature, For example, it is preferable that it is the range of 10 degreeC or more and 100 degrees C or less, As bonding pressure (linear pressure), it is preferable that it is the range of 0.1 kgf/cm or more and 100 kgf/cm or less, for example. . Further, in the present invention, the dicing die-bonding film 20 is a laminate provided with a release liner on the pressure-sensitive adhesive layer 2 and the die-bonding film (adhesive layer) 3 is also referred to as the dicing die-bonding film 20 . It is sometimes called In the dicing die-bonding film 20, the release liner provided on the pressure-sensitive adhesive layer 2 and the die-bonding film (adhesive layer) 3 is provided when the dicing die-bonding film 20 is applied to the work; It should be peeled off.

The dicing die-bonding film 20 may have a form wound in a roll shape or a form in which wide sheets are laminated. Moreover, the form of a sheet shape or tape shape formed by cutting|disconnecting the dicing tape 10 of these forms to a predetermined size may be sufficient.

For example, as disclosed in Japanese Patent Laid-Open No. 2011-159929, an adhesive layer (die-bonding film 3) pre-cut into the shape of a wafer constituting a semiconductor element on a release substrate (release liner) And it can also manufacture as the form of the film roll shape which formed many adhesive films (dicing tape 10) in island shape. In this case, the dicing tape 10 is formed in a circular shape having a larger diameter than that of the die bonding film (adhesive layer) 3 , and the die bonding film (adhesive layer) 3 is a semiconductor wafer 30 . It is formed in a larger diameter circle. When the precut process is performed in the form of such a film roll, the dicing tape 10 is locally heated and/or cooled in order to continuously and satisfactorily peel and remove the excess dicing tape 10 without breaking it. may be processed. Here, although the temperature of a heating is selected suitably, it is preferable that it is 30 degreeC - 120 degreeC. Although the heating time is suitably selected, it is preferable that it is 0.1 to 10 second. Since the dicing tape 10 of this invention has fixed heat resistance, even if it heat-processes at high temperature of 120 degreeC, it does not pose a problem in particular in the handling.

<Method for manufacturing semiconductor chip>

5 is a method for manufacturing a semiconductor chip using the dicing die-bonding film 20 in which a die-bonding film (adhesive layer) 3 is laminated on the pressure-sensitive adhesive layer 2 of the dicing tape 10 of the present embodiment. This is a flow chart for explaining 6 shows a ring frame (wafer ring) 40 on the outer edge of the dicing tape 10 of the dicing die-bonding film 20 (exposed portion of the pressure-sensitive adhesive layer 2); It is a schematic diagram which shows the state in which the semiconductor wafer processed so that it could be separated into pieces was stuck on the die-bonding film (adhesive layer) 3 of a center part. Furthermore, FIGS. 7(a) to 7(f) are cross-sectional views showing an example of a grinding process of a semiconductor wafer in which a plurality of modified regions are formed by laser light irradiation, and a bonding process of the semiconductor wafer to a dicing die-bonding film. to be. 8(a) to 8(f) are cross-sectional views showing an example of manufacturing a semiconductor chip using a thin film semiconductor wafer having a plurality of modified regions to which a dicing die-bonding film is bonded.

<Method for manufacturing semiconductor chip using dicing die-bonding film 20>

A method for manufacturing a semiconductor chip using the dicing die-bonding film 20 is not particularly limited, and any of the methods described above may be used. do.

First, as shown in Fig. 7A, for example, a semiconductor wafer in which a plurality of integrated circuits (not shown) are mounted on the first surface Wa of a semiconductor wafer W containing silicon as a main component. Prepare (W) (step S201 of FIG. 5: preparation process). And the tape (back-grinding tape) T for a wafer process which has the adhesive surface Ta is pasted together by the 1st surface Wa side of the semiconductor wafer W.

Next, as shown in FIG. 7(b) , in a state where the semiconductor wafer W is held by the tape T for wafer processing, the laser beam with the light-converging point aligned inside the wafer is transferred to the wafer processing tape ( From the side opposite to T), that is, from the second surface Wb side of the semiconductor wafer, the semiconductor wafer W is irradiated along the grid-like division line X, and the semiconductor is ablated by multiphoton absorption. A modified region 30b is formed in the wafer W (step S202 of FIG. 5: modified region forming process). The modified region 30b is a weakened region for cleaving and separating the semiconductor wafer W in units of semiconductor chips by the cool expand process. Regarding a method of forming the modified region 30b along a line to be divided by irradiation with laser light in the semiconductor wafer W, for example, Japanese Patent No. 3408805, Japanese Unexamined Patent Publication No. 2002-192370, Reference may be made to the method disclosed in Japanese Patent Laid-Open No. 2003-338567 and the like.

Next, as shown in FIG.7(c), in the state in which the semiconductor wafer W was hold|maintained by the tape T for a wafer process, until the semiconductor wafer W reaches a predetermined thickness 2nd surface Wb It is thinned by grinding from Here, the thickness of the semiconductor wafer 30 is preferably adjusted to a thickness of 100 µm or less, more preferably 10 µm or more and 50 µm or less from the viewpoint of reducing the thickness of the semiconductor device. Thereby, a thin-film semiconductor wafer 30 having therein a modified region 30b that facilitates segmentation into a plurality of semiconductor chips 30a is obtained by cool expand in a subsequent step (FIG. 5). step S203: grinding/thinning process). Moreover, in this grinding/thinning process, the final thickness after grinding of the semiconductor wafer 30, the number of scans of laser beam irradiation (input power), the difference in the physical properties of the tape T for wafer processing, etc., grinding of a grinding wheel When a load is applied, cracks grow in the semiconductor wafer 30 in the vertical direction from the modified region 30b as a starting point, and at this stage, cracks are already split into individual semiconductor chips 30a, and cracks grow There are cases where it is not divided because it is not done.

Next, as shown to (d) and (e) of FIG. 7, the semiconductor wafer 30 (semiconductor wafer 30) of the thin film which has therein several modified|reformed area|region 30b hold|maintained by the tape T for wafer processing. ) has already been cut into the semiconductor chip 30a, a plurality of semiconductor chips 30a) are bonded to the die bond film 3 of the separately prepared dicing die bond film 20 (step S204 in Fig. 5). : bonding process). In this step, after peeling the release liner from the pressure-sensitive adhesive layer 2 and the die-bonding film (adhesive layer) 3 of the circularly cut dicing die-bonding film 20, as shown in FIG. 6 , the die While affixing a ring frame (wafer ring) 40 to the outer edge part (adhesive layer 2 exposed part) of the dicing tape 10 of the dicing die bonding film 20, the adhesive of the dicing tape 10 A thin semiconductor wafer 30 (semiconductor wafer 30) processed so as to be separated into pieces on a die bond film (adhesive layer) 3 laminated on the upper central portion of the layer 2 (semiconductor wafer 30 is already cut into semiconductor chips 30a) In this case, a plurality of semiconductor chips 30a) are affixed. Thereafter, as shown in Fig. 7(f), the thin film semiconductor wafer 30 (in the case where the semiconductor wafer 30 is already divided into the semiconductor chips 30a, a plurality of semiconductor chips 30a) is formed from a wafer. The tape T for processing is peeled off. Sticking is performed, pressurizing with pressure means, such as a crimping|compression-bonding roll. The sticking temperature is not particularly limited, and for example, it is preferably in the range of 20°C or more and 130°C or less, and from the viewpoint of reducing the warpage of the semiconductor wafer 30, it is more preferably in the range of 40°C or more and 100°C or less. do. A sticking pressure is not specifically limited, It is preferable that it is the range of 0.1 Mpa or more and 10.0 Mpa or less. Since the dicing tape 10 of this invention has fixed heat resistance, even if the sticking temperature is high, in the handling, it does not pose a problem in particular.

Then, after the ring frame 40 is affixed on the adhesive layer 2 of the dicing tape 10 in the dicing die-bonding film 20, as shown to Fig.8 (a), piece by piece The dicing die-bonding film 20 accompanying the thin-film semiconductor wafer 30 (a plurality of semiconductor chips 30a when the semiconductor wafer 30 has already been cut into the semiconductor chips 30a) so as to be processed ) is fixed to the retainer 41 of the expand device. As shown in Fig. 8(b) , the thin-film semiconductor wafer 30 can be divided into a plurality of semiconductor chips 30a along the dicing schedule line X, and therein a plurality of modified regions. (30b) is formed.

Next, the first expand step, that is, the cool expand step, under the condition of a relatively low temperature (for example, -30°C or higher and 0°C or lower) is performed as shown in FIG. 8(c), and the semiconductor wafer ( 30) is divided into a plurality of semiconductor chips 30a, and the die-bonding film (adhesive layer) 3 of the dicing die-bonding film 20 is a small die corresponding to the size of the semiconductor chip 30a. It is cut into the bond film (adhesive layer) 3a, and the semiconductor chip 30a which has the die bond film 3a is obtained (step S205 of FIG. 5: cool expand process). In this step, a hollow cylinder-shaped push-up member (not shown) included in the expand device is raised in contact with the dicing tape 10 on the lower side of the dicing die-bonding film 20, and is lifted. So that the dicing tape 10 of the dicing die-bonding film 20 to which the semiconductor wafer 30 processed so that the semiconductor wafer 30 can be made is laminated|attached is stretched|stretched in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30 is expanded The internal stress generated by the tension in the entire direction of the dicing tape 10 by cool expand is the semiconductor wafer 30 processed so as to be separated into pieces and the die-bonding film affixed to the semiconductor wafer 30 ( 3) is transmitted as an external stress. By this external stress, in the semiconductor wafer 30, cracks grow in the vertical direction with the plurality of lattice-shaped modified regions 30b formed therein as a starting point, and split into individual semiconductor chips 30a. , the die bond film 3 brittle at a low temperature is also cut into small pieces of the die bond film 3a of the same size as the semiconductor chip 30a. In addition, when the semiconductor wafer 30 has already been cut into individual semiconductor chips 30a in the grinding/thinning process, only the die-bonding film 3 that is brittle at low temperature in close contact with the semiconductor chip 30a, It is cut into small pieces of the die-bonding film 3a corresponding to the size of the semiconductor chip 30a by cool expand, so that the semiconductor chip 30a having the die-bonding film 3a is obtained.

The temperature conditions in the cool expand step are, for example, -30°C or more and 0°C or less, preferably -20°C or more and -5°C or less, more preferably -15°C or more and -5 ℃ or less, particularly preferably -15 ℃. The expand speed (the speed at which the hollow cylindrical push-up member rises) in the cool expand step is preferably in the range of 0.1 mm/sec or more and 1000 mm/sec or less, more preferably 10 mm/sec. It is the range of more than second and less than 300 mm/sec. In addition, the expand amount (push-up height of the hollow-cylindrical push-up member) in the said cool expand process becomes like this. Preferably it is the range of 3 mm or more and 16 mm or less.

Here, in the dicing tape 10 of the present invention, first, the base film 1 is composed of a resin composition mainly composed of an ionomer of an ethylene/unsaturated carboxylic acid copolymer containing a specific amount of polyamide resin. By doing so, the tensile stress at the time of 5% elongation at -15°C can be made into an appropriate range, so the internal stress generated by the tensile force in the entire direction of the dicing tape 10 by cool expand is reduced to fragmentation. Efficiently transmitted as an external stress to the processed semiconductor wafer 30 and the die-bonding film 3 affixed to the semiconductor wafer 30, as a result, the semiconductor wafer 30 and the die-bonding film 3 are At the same time, it is divided with good yield. Further, in the dicing tape 10 of the present invention, the pressure-sensitive adhesive layer 2 is composed of a pressure-sensitive adhesive composition mainly comprising an acrylic pressure-sensitive adhesive polymer having a specific glass transition temperature (Tg) and a hydroxyl value, and a polyisocyanate-based crosslinking agent By controlling the addition amount of , the toughness and residual hydroxyl group concentration of the pressure-sensitive adhesive composition after the crosslinking reaction can be made within an appropriate range, so that at the interface between the die-bonding film 3 and the pressure-sensitive adhesive layer 2 under low temperature, appropriate impact relaxation properties and initial stage Adhesive force is provided, and as a result, the impact force when the semiconductor wafer 30 or the die-bonding film 3 processed so as to be separated into pieces by cool expand is cut is relieved by the pressure-sensitive adhesive layer 2, and the semiconductor chip Lifting and peeling from the adhesive layer 2 on the edge four sides of the die-bonding film 3a (adhesive layer) of the small piece holding the 30a is suppressed.

After the cool expand step, the hollow cylinder-shaped push-up member of the expand device is lowered, and the expanded state in the dicing tape 10 is canceled.

Next, a second expand step, that is, a room temperature expand step, under conditions of a relatively high temperature (for example, 10° C. or more and 30° C. or less) is performed as shown in FIG. 8(d), and the die-bonding film ( The distance (kerf width) between the semiconductor chips 30a having the adhesive layer) 3a is widened. In this process, the column-shaped table (not shown) with which the expand apparatus is equipped is contact|abutted to the dicing tape 10 in the lower side of the dicing die-bonding film 20, and is raised, and a dicing die-bonding is carried out. The dicing tape 10 of the film 20 is expanded (step S206 of FIG. 5: room temperature expand process). By sufficiently securing the distance (kerf width) between the semiconductor chips 30a having the die-bonding film (adhesive layer) 3a by the room temperature expand process, the recognition of the semiconductor chip 30a by a CCD camera or the like is improved. , it is possible to prevent re-adhesion of the semiconductor chips 30a having the die-bonding film (adhesive layer) 3a , which occurs when adjacent semiconductor chips 30a come into contact with each other at the time of pickup. As a result, in the pick-up process mentioned later, the pick-up property of the semiconductor chip 30a which has the die-bonding film (adhesive agent layer) 3a improves.

The temperature conditions in the room temperature expand step are, for example, 10°C or higher, and preferably 15°C or higher and 30°C or lower. The expand speed (the speed at which the columnar table rises) in the normal temperature expand step is, for example, in the range of 0.1 mm/sec or more and 50 mm/sec or less, preferably 0.3 mm/sec or more and 30 mm/sec. It is in the range of seconds or less. In addition, the expand amount in the normal temperature expand process is the range of 3 mm or more and 20 mm or less, for example.

After the dicing tape 10 is expanded to room temperature by raising the table, the table vacuum-sucks the dicing tape 10 . And in the state which maintained the adsorption|suction by the table, the table descend|falls with a workpiece|work, and the expanded state in the dicing tape 10 is cancelled|released. After suppressing the narrowing of the kerf width of the semiconductor chip 30a having the die bond film (adhesive layer) 3a on the dicing tape 10 after releasing the expanded state, the dicing tape 10 is placed on the table. In the vacuum-adsorbed state, the circumferential portion outside the holding region of the semiconductor chip 30a in the dicing tape 10 is heat-shrinked (heat shrink) by hot air blowing, and generated by the expand It is preferable to maintain the tension state by eliminating the sagging of the dicing tape 10 . After the heat shrink, the vacuum adsorption state by the table is released. The temperature of the hot air may be adjusted according to the physical properties of the base film 1, the distance between the hot air outlet and the dicing tape, and the amount of air, for example, preferably in the range of 200°C or more and 250°C or less. Moreover, it is preferable that the distance of a hot-air outlet and a dicing tape is the range of 15 mm or more and 25 mm or less, for example. Moreover, as for the air volume, the range of 35 L/min or more and 45 L/min or less is preferable, for example. Further, when performing the heat shrink step, the semiconductor chip 30a of the dicing tape 10 is rotated while rotating the stage of the expand device at a rotation speed of, for example, 3°/sec or more and 10°/sec or less. ) Hot air is blown along the outer circumference of the holding area.

The dicing tape 10 of the present invention, as the base film 1, is a resin film composed of a resin composition mainly comprising an ionomer of an ethylene/unsaturated carboxylic acid copolymer containing a specific amount of polyamide resin. As it is used, it has a certain heat resistance. For this reason, in the said heat shrink process, even if high-temperature hot air is sprayed, thermal wrinkles etc. do not generate|occur|produce, and the circumferential part of the dicing tape 10 can be heat-shrinked without a problem.

Then, with respect to the dicing tape 10, by irradiating an active energy ray from the base film 1 side, the adhesive layer 2 is hardened and contracted, and to the die-bonding film 3a of the adhesive layer 2 to lower the adhesive force (step S207 of FIG. 5: active energy ray irradiation process). Here, as an active energy ray used for the said post-irradiation, an ultraviolet-ray, a visible ray, infrared rays, an electron beam, β-ray, γ-ray, etc. are mentioned. Among these active energy rays, ultraviolet (UV) and electron beam (EB) are preferable, and ultraviolet (UV) is particularly preferably used. The light source for irradiating the ultraviolet (UV) is not particularly limited, but for example, a black light, an ultraviolet fluorescent lamp, a low pressure mercury lamp, a medium pressure mercury lamp, a high pressure mercury lamp, an ultra high pressure mercury lamp, a carbon arc lamp, a metal halide lamp, a xenon lamp, etc. is available. In addition, an ArF excimer laser, a KrF excimer laser, an excimer lamp, or synchrotron radiation can also be used. The amount of irradiation light of the ultraviolet (UV) is not particularly limited, for example, 100mJ/cm ² or more and 2,000J/cm ² or less is preferably in the range, and 300mJ/cm ² or more and 1,000J/cm ² or less The range is more preferably.

Here, as described above, the dicing tape 10 of the present invention improves the adhesiveness of the pressure-sensitive adhesive layer 2 to the die-bonding film (adhesive layer) 3 under a low temperature, but on the other hand, In the active energy ray-curable pressure-sensitive adhesive composition constituting the pressure-sensitive adhesive layer 2, the active energy ray-reactive carbon-carbon double bond concentration is controlled in the range of 0.85 mmol or more and 1.60 mmol or less per 1 g of the active energy ray-curable pressure-sensitive adhesive composition, In the pressure-sensitive adhesive layer 2 after ultraviolet (UV) irradiation, the crosslinking density is increased by the three-dimensional crosslinking reaction of carbon-carbon double bonds, that is, the storage elastic modulus is greatly increased, the glass transition temperature is also increased, and the volume shrinkage is also increased. Since it becomes large, the adhesive force with respect to the die-bonding film 3a can fully be reduced. As a result, in a pick-up process of a later stage, the pick-up property of the semiconductor chip 30a which has the die-bonding film (adhesive agent layer) 3a becomes favorable.

Subsequently, the semiconductor chip 30a having each die-bonding film (adhesive layer) 3a cut into pieces by the above-described expand process is subjected to ultraviolet (UV) irradiation of the dicing tape 10 after So-called pickup is performed to peel off the pressure-sensitive adhesive layer 2 (step S208 in Fig. 5: peeling (pickup) step).

As the method of the pickup, for example, as shown in FIG. ), as shown in Fig. 8(f), while pushing up the second surface with a push-up pin (needle) 60, a semiconductor chip having a pushed-up die-bonding film (adhesive layer) 3a The method etc. are mentioned by attracting|sucking 30a with the suction collet 50 of a pick-up apparatus (not shown), and peeling off from the adhesive layer 2 of the dicing tape 10. Thereby, the semiconductor chip 30a which has the die-bonding film (adhesive agent layer) 3a is obtained.

Pick-up conditions are not particularly limited as long as they are practically an acceptable range, and usually, the pushing-up speed of the push-up pin (needle) 60 is within the range of 1 mm/sec or more and 100 mm/sec or less. Although it is often set, when the thickness of the semiconductor chip 30a (thickness of the semiconductor wafer) is 100 µm or less, from the viewpoint of suppressing damage to the thin-film semiconductor chip 30a, 1 mm/sec or more 20 mm/ It is preferable to set it within the range of seconds or less. From a viewpoint of adding productivity, it is more preferable that it can set within the range of 5 mm/sec or more and 20 mm/sec or less.

In addition, it is preferable that the push-up height of the push-up pin that the semiconductor chip 30a is not damaged and can be picked up can be set within the range of 100 µm or more and 600 µm or less, for example, from the same viewpoint as above, , it is more preferable that it can be set within the range of 100 micrometers or more and 450 micrometers or less from a viewpoint of stress reduction with respect to a semiconductor thin film chip. From a viewpoint of adding productivity, it is especially preferable that it can set within the range of 100 micrometers or more and 350 micrometers or less. It can be said that the dicing tape which can make such a push-up height smaller is excellent in pick-up property.

As described above, the base film (1) mainly composed of an ionomer of a specific polyamide resin-containing ethylene/unsaturated carboxylic acid-based copolymer and a pressure-sensitive adhesive layer (2) composed of a specific active energy ray-curable pressure-sensitive adhesive composition The dicing tape 10 of the present invention to be used is, in a semiconductor manufacturing process, a die-bonding film (adhesive layer) 3 on the pressure-sensitive adhesive layer 2 of the dicing tape 10 is adhered and laminated so as to be peelable. When used as the form of the dicing die-bonding film 20, it has high fluidity like a wire-embedded die-bonding film, and even when a thick die-bonding film is laminated and applied, heat resistance capable of withstanding the heat treatment of each process is provided, and the semiconductor wafer 30 having the die bond film 3 is well cut by cool expand, and the kerf width can be sufficiently secured by room temperature expand, and the die bond film 3a after cutting ), partial peeling (lifting) of the dicing tape 10 from the pressure-sensitive adhesive layer 2 is sufficiently suppressed, and the semiconductor chips 30a having the cut individual die-bonding films 3a are favorably picked up can do.

In addition, the manufacturing method demonstrated with (a)-(f) of FIG. 8 is an example (SDBG) of the manufacturing method (SDBG) of the semiconductor chip 30a using the dicing die-bonding film 20, The dicing tape 10 is The method used as the form of the dicing die-bonding film 20 is not limited to said method. That is, the dicing die-bonding film 20 of this embodiment can be used without being limited to the said method, as long as it sticks to the semiconductor wafer 30 in dicing.

Among them, the dicing tape 10 of the present invention is used as a dicing die-bonding film by being integrated with a wire-embedded die-bonding film in a manufacturing method for obtaining a thin-film semiconductor chip such as DBG, stealth dicing, SDBG, etc. It is suitable as a dicing tape for Of course, it is also possible to use it integrally with a general-purpose die-bonding film.

<Method for manufacturing semiconductor device>

A semiconductor device equipped with a semiconductor chip manufactured using the dicing die-bonding film 20 in which the dicing tape 10 and the die-bonding film 3 to which this embodiment is applied are integrated will be described below in detail. do.

A semiconductor device (semiconductor package) includes, for example, the above-described die bond film (adhesive layer) 3a, and the semiconductor chip 30a is attached to a support member for mounting a semiconductor chip or a semiconductor chip by thermocompression bonding; Then, it can obtain by passing through processes, such as a wire bonding process and the sealing process by a sealing material.

9 is a semiconductor in a stacked configuration in which a semiconductor chip manufactured using a dicing die bond film 20 in which the dicing tape 10 to which the present embodiment is applied and the wire embedded die bond film 3 are integrated is mounted. It is a schematic sectional drawing of one aspect|mode of an apparatus. The semiconductor device 70 shown in FIG. 9 includes a support substrate 4 for mounting a semiconductor chip, cured die-bonding films (adhesive layers) 3a1 and 3a2 , a first-stage semiconductor chip 30a1 , and a second-stage of the semiconductor chip 30a2 and the sealing material 8 are provided. The semiconductor chip mounting support substrate 4 , the cured die-bonding film 3a1 , and the semiconductor chip 30a1 constitute the support member 9 of the semiconductor chip 30a2 .

A plurality of external connection terminals 5 are arranged on one surface of the support substrate 4 for mounting a semiconductor chip, and a plurality of terminals 6 are arranged on the other surface of the support substrate 4 for mounting a semiconductor chip, have. The support substrate 4 for mounting a semiconductor chip includes a connection terminal (not shown) of the semiconductor chip 30a1 and the semiconductor chip 30a2, and a wire 7 for electrically connecting the external connection terminal 5, have. The semiconductor chip 30a1 is adhered to the support substrate 4 for mounting a semiconductor chip with a cured die-bonding film 3a1 in such a way that the unevenness originating from the external connection terminal 5 is embedded. The semiconductor chip 30a2 is adhered to the semiconductor chip 30a1 by a cured die-bonding film 3a2. The semiconductor chip 30a1 , the semiconductor chip 30a2 , and the wire 7 are sealed with a sealing material 8 . As described above, the wire-embedded die-bonding film 3a is suitably used for a semiconductor device having a stacked structure in which a plurality of semiconductor chips 30a are overlapped.

10 is another semiconductor device on which a semiconductor chip manufactured using the dicing die-bonding film 20 in which the dicing tape 10 to which this embodiment is applied and the general-purpose die-bonding film 3 are integrated is mounted. is a schematic cross-sectional view of an aspect of The semiconductor device 80 shown in FIG. 10 is equipped with the support substrate 4 for semiconductor chip mounting, the hardened|cured die-bonding film 3a, the semiconductor chip 30a, and the sealing material 8. As shown in FIG. The semiconductor chip mounting support substrate 4 is a support member for the semiconductor chip 30a, and is a main surface of the connection terminal (not shown) of the semiconductor chip 30a and the semiconductor chip mounting support substrate 4 . It has a wire 7 for electrically connecting an external connection terminal (not shown) disposed on the . The semiconductor chip 30a is adhere|attached to the support substrate 4 for semiconductor chip mounting with the hardened|cured die-bonding film 3a. The semiconductor chip 30a and the wire 7 are sealed with a sealing material 8 .

[Example]

The present invention will be described in more detail by the following examples, but the present invention is not limited thereto.

1. Preparation of the base film (1)

As a material for producing the base films 1 (a) to (s), the following resins were prepared, respectively.

(Resin (A) composed of an ionomer of an ethylene/unsaturated carboxylic acid-based copolymer)

・Resin (IO1)

Ternary copolymer consisting of a mass ratio of ethylene/methacrylic acid/acrylic acid 2-methyl-propyl=80/10/10, degree of neutralization by Zn ²⁺ ions: 60 mol%, melting point: 86°C, MFR: 1 g/10 min (190°C/2.16 kg load), Density: 0.96 g/cm ³

・Resin (IO2)

Binary copolymer consisting of a mass ratio of ethylene/methacrylic acid = 85/15, degree of neutralization by Zn ²⁺ ions: 23 mol%, MFR: 5 g/10 min (190°C/2.16 kg load), melting point: 91°C , Density: 0.95 g/cm ³

(Polyamide resin (B))

・Resin (PA1)

Nylon 6, Melting Point: 225°C, Density: 1.13 g/cm ³

・Resin (PA2)

Nylon 6-12, Melting Point: 215°C, Density: 1.06 g/cm ³

(Other resin (C))

・Resin (EMAA1)

Binary copolymer consisting of a mass ratio of ethylene/methacrylic acid = 91/9, melting point: 99 °C, MFR: 3 g/10 min (190 °C/2.16 kg load), density: 0.93 g/cm ³

・Resin (EMAA2)

Binary copolymer consisting of a mass ratio of ethylene/methacrylic acid = 91/9, melting point: 98°C, MFR: 5 g/10 min (190°C/2.16 kg load), density: 0.93 g/cm ³

・Resin (PP)

Random copolymerized polypropylene, melting point 138℃

・Resin (EVA)

Ethylene-vinyl acetate copolymer, vinyl acetate content 20% by mass, melting point 82°C, density: 0.94 g/cm ³

・Resin (PVC)

Vinyl chloride, melting point 95℃

(Base film 1(a))

(IO1) as resin (A) which consists of an ionomer, and (PA1) as polyamide resin (B) were prepared. First, the ionomer resin (A) = (IO1) and the polyamide resin (B) = (PA1) were dry blended in a mass ratio of (A):(B) = 95:5. Next, the resin composition for base film 1 (a) was obtained by injecting|throwing-in the dry-blended mixture to the resin inlet of the twin screw extruder, and melt-kneading at the die temperature of 230 degreeC. The obtained resin composition is put into each extruder using a one-type (same resin) three-layer T-die film molding machine, and is molded under the conditions of a processing temperature of 240° C. Film 1 (a) was produced. The thickness of each layer was made into 1st layer (surface side contacting the adhesive layer 2) / 2nd layer / 3rd layer = 30 micrometers/30 micrometers/30 micrometers. The mass ratio of the total amount of the resin (A) comprising the ionomer and the total amount of the polyamide resin (B) in the entire layer is: the total amount of (A): the total amount of (B) = 95:5.

(Base film 1(b))

The base material except that the ionomer resin (A) = (IO1) and the polyamide resin (B) = (PA1) were dry blended in a mass ratio of (A): (B) = 90: 10 It carried out similarly to the film 1 (a), and produced the base film 1 (b) with a thickness of 90 micrometers of 3 layer structure of the same resin. The thickness of each layer was made into 1st layer (surface side contacting the adhesive layer 2) / 2nd layer / 3rd layer = 30 micrometers/30 micrometers/30 micrometers. The mass ratio of the total amount of the resin (A) comprising the ionomer and the total amount of the polyamide resin (B) in the entire layer is: the total amount of (A): the total amount of (B) = 90:10.

(Base film 1(c))

The base material except that the resin (A) = (IO1) comprising the ionomer and the polyamide resin (B) = (PA1) were dry blended in a mass ratio of (A):(B) = 85:15 It carried out similarly to the film 1 (a), and produced the base film 1 (c) with a thickness of 90 micrometers of 3 layer structure of the same resin. The thickness of each layer was made into 1st layer (surface side contacting the adhesive layer 2) / 2nd layer / 3rd layer = 30 micrometers/30 micrometers/30 micrometers. The mass ratio of the total amount of the resin (A) comprising the ionomer and the total amount of the polyamide resin (B) in the entire layer is: the total amount of (A): the total amount of (B) = 85:15.

(Base film 1(d))

The base material except that the ionomer resin (A) = (IO1) and the polyamide resin (B) = (PA1) were dry blended in a mass ratio of (A): (B) = 80: 20 It carried out similarly to the film 1(a), and produced the base film 1(d) with a thickness of 90 micrometers of 3 layer structure of the same resin. The thickness of each layer was made into 1st layer (surface side contacting the adhesive layer 2) / 2nd layer / 3rd layer = 30 micrometers/30 micrometers/30 micrometers. The mass ratio of the total amount of the resin (A) composed of the ionomer and the total amount of the polyamide resin (B) in the entire layer is: the total amount of (A): the total amount of (B) = 80:20.

(Base film 1(e))

The base material except that the resin (A) = (IO1) comprising the ionomer and the polyamide resin (B) = (PA1) were dry blended in a mass ratio of (A):(B) = 74:26 It carried out similarly to the film 1 (a), and produced the base film 1 (e) with a thickness of 90 micrometers of 3 layer structure of the same resin. The thickness of each layer was made into 1st layer (surface side contacting the adhesive layer 2) / 2nd layer / 3rd layer = 30 micrometers/30 micrometers/30 micrometers. The mass ratio of the total amount of the resin (A) comprising the ionomer and the total amount of the polyamide resin (B) in the entire layer is: the total amount of (A): the total amount of (B) = 74:26.

(Base film 1(f))

The base material except that the resin (A) = (IO1) comprising the ionomer and the polyamide resin (B) = (PA1) were dry blended in a mass ratio of (A): (B) = 72:28 It carried out similarly to the film 1(a), and produced the base film 1(f) with a thickness of 90 micrometers of 3 layer structure of the same resin. The thickness of each layer was made into 1st layer (surface side contacting the adhesive layer 2) / 2nd layer / 3rd layer = 30 micrometers/30 micrometers/30 micrometers. The mass ratio of the total amount of the resin (A) comprising the ionomer and the total amount of the polyamide resin (B) in the entire layer is: the total amount of (A): the total amount of (B) = 72:28.

(Base film 1 (g))

(IO1) as resin (A) which consists of an ionomer, and (PA1) as polyamide resin (B) were prepared. First, as resins for the first layer and the third layer, the resin (A) = (IO1) and the polyamide resin (B) = (PA1) composed of the ionomer, (A): (B) = 72: Dry blended at a mass ratio of 28. Next, the resin composition for the 1st layer of base film 1 (g) and the 3rd layer was obtained by injecting|throwing-in the dry-blended mixture into the resin inlet of the twin screw extruder, and melt-kneading at the die temperature of 230 degreeC. In addition, as resin for 2nd layer, resin (A)=(IO1) which consists of the said ionomer was used independently. Each resin composition and resin were put into each extruder using a two-type (two kinds of resin) three-layer T-die film molding machine, and molded under the conditions of a processing temperature of 240°C, and three layers of two types of resins The base film 1 (g) with a thickness of 90 micrometers of a structure was produced. The thickness of each layer was made into 1st layer (surface side contacting the adhesive layer 2) / 2nd layer / 3rd layer = 30 micrometers/30 micrometers/30 micrometers. The mass ratio of the total amount of the resin (A) comprising the ionomer and the total amount of the polyamide resin (B) in the entire layer is: the total amount of (A): the total amount of (B) = 81:19.

(Base film 1(h))

(IO1) as resin (A) which consists of an ionomer, (PA1) as polyamide resin (B), and (EMAA1) as other resin (C) were prepared. First, as resins for the first layer and the third layer, the resin (A) = (IO1) and the polyamide resin (B) = (PA1) composed of the ionomer, (A): (B) = 85: Dry blended at a mass ratio of 15. Next, the resin composition for the 1st layer of base film 1(h) and the 3rd layer was obtained by injecting|throwing-in the dry-blended mixture into the resin inlet of the twin screw extruder, and melt-kneading at the die temperature of 230 degreeC. In addition, as resin for 2nd layer, (EMAA1) of the said other resin (C) was used independently. Each resin composition and resin were put into each extruder using a two-type (two kinds of resin) three-layer T-die film molding machine, and molded under the conditions of a processing temperature of 240°C, and three layers of two types of resins The 80-micrometer-thick base film 1 (h) of a structure was produced. The thickness of each layer was made into 1st layer (surface side contacting the adhesive layer 2) / 2nd layer / 3rd layer = 30 micrometers/20 micrometers/30 micrometers. The mass ratio of the total amount of the resin (A) comprising the ionomer and the total amount of the polyamide resin (B) in the entire layer is: the total amount of (A): the total amount of (B) = 85:15. In addition, the content rate of the total amount of resin (A) and resin (B) in the whole layer is 75 mass %.

(Base film 1(i))

(IO1) as resin (A) which consists of an ionomer, (PA1) as polyamide resin (B), and (EMAA2) as other resin (C) were prepared. First, as resins for the first layer and the third layer, the resin (A) = (IO1) and the polyamide resin (B) = (PA1) composed of the ionomer, (A): (B) = 90: Dry blended at a mass ratio of 10. Next, the resin composition for the 1st layer of base film 1(i) and the 3rd layer was obtained by injecting|throwing-in the dry-blended mixture into the resin inlet of the twin screw extruder, and melt-kneading at the die temperature of 230 degreeC. In addition, as resin for 2nd layer, (EMAA2) of the said other resin (C) was used independently. Each resin composition and resin were put into each extruder using a two-type (two kinds of resin) three-layer T-die film molding machine, and molded under the conditions of a processing temperature of 240°C, and three layers of two types of resins The base film 1(i) with a thickness of 90 micrometers of a structure was produced. The thickness of each layer was made into 1st layer (surface side contacting the adhesive layer 2) / 2nd layer / 3rd layer = 35 micrometers/20 micrometers/35 micrometers. The mass ratio of the total amount of the resin (A) comprising the ionomer and the total amount of the polyamide resin (B) in the entire layer is: the total amount of (A): the total amount of (B) = 90:10. In addition, the content rate of the total amount of resin (A) and resin (B) in the whole layer is 78 mass %.

(Base film 1(j))

(IO1) as resin (A) which consists of an ionomer, and (PA1) as polyamide resin (B) were prepared. First, as resins for the first layer and the second layer, the resin (A) = (IO1) and the polyamide resin (B) = (PA1) composed of the ionomer, (A): (B) = 90: Dry blended at a mass ratio of 10. Next, the resin composition for the 1st layer of base film 1(j) and the 2nd layer was obtained by injecting|throwing-in the dry-blended mixture into the resin inlet of the twin screw extruder, and melt-kneading at the die temperature of 230 degreeC. Each resin composition is put into each extruder using a single (same resin) two-layer T-die film molding machine, and molded under the conditions of a processing temperature of 240 ° C. Base film 1 (j) was produced. The thickness of each layer was made into 1st layer (surface side in contact with the adhesive layer 2) / 2nd layer = 45 micrometers/45 micrometers. The mass ratio of the total amount of the resin (A) comprising the ionomer and the total amount of the polyamide resin (B) in the entire layer is: the total amount of (A): the total amount of (B) = 90:10.

(Base film 1(k))

(IO1) as resin (A) which consists of an ionomer, and (PA1) as polyamide resin (B) were prepared. First, as the resin for the first layer, the ionomer resin (A) = (IO1) and the polyamide resin (B) = (PA1) were dried in a mass ratio of (A): (B) = 90:10. blended Next, the resin composition for the 1st layer of the base film 1(k) was obtained by throwing-in the dry-blended mixture into the resin inlet of the twin screw extruder, and melt-kneading at the die temperature of 230 degreeC. Subsequently, as the resin for the second layer, the ionomer resin (A) = (IO1) and the polyamide resin (B) = (PA1) in a mass ratio of (A): (B) = 80:20 Dry blended. Next, the resin composition for the 2nd layer of the base film 1(k) was obtained by injecting|throwing-in the dry-blended mixture into the resin inlet of the twin screw extruder, and melt-kneading at the die temperature of 230 degreeC. Each resin composition was put into each extruder using a two-type (same resin) two-layer T-die film molding machine, and molded under the conditions of a processing temperature of 240 ° C. A micrometer base film 1 (k) was produced. The thickness of each layer was made into 1st layer (surface side contacting the adhesive layer 2)/2nd layer = 50 micrometers/50 micrometers. The mass ratio of the total amount of the resin (A) composed of the ionomer as the whole layer and the total amount of the polyamide resin (B) is the total amount of (A): the total amount of (B) = 90:10.

(Base film 1(l))

(IO1) as resin (A) which consists of an ionomer, and (PA1) as polyamide resin (B) were prepared. The resin (A) = (IO1) comprising the ionomer and the polyamide resin (B) = (PA1) were dry blended in a mass ratio of (A): (B) = 70:30. Next, the resin composition for base film 1(l) was obtained by injecting|throwing-in the dry-blended mixture to the resin inlet of the twin screw extruder, and melt-kneading at the die temperature of 230 degreeC. The obtained resin composition was injected|thrown-in to the extruder using the T-die film molding machine, it shape|molded on the conditions of the processing temperature of 240 degreeC, and the 90-micrometer-thick base film 1 (l) of single-layer structure was produced.

(Base film 1 (m))

(IO1) as resin (A) which consists of an ionomer, and (PA2) as polyamide resin (B) were prepared. The base material except that the resin (A) = (IO1) comprising the ionomer and the polyamide resin (B) = (PA2) were dry blended in a mass ratio of (A):(B) = 88:12 It carried out similarly to the film 1 (a), and produced the base film 1 (m) with a thickness of 90 micrometers of 3 layer structure of the same resin. The thickness of each layer was made into 1st layer (surface side contacting the adhesive layer 2) / 2nd layer / 3rd layer = 30 micrometers/30 micrometers/30 micrometers. The mass ratio of the total amount of the resin (A) comprising the ionomer and the total amount of the polyamide resin (B) in the entire layer is: the total amount of (A): the total amount of (B) = 88:12.

(Base film 1(n))

(IO2) as resin (A) which consists of an ionomer, and (PA1) as polyamide resin (B) were prepared. The base material except that the ionomer resin (A) = (IO2) and the polyamide resin (B) = (PA1) were dry blended in a mass ratio of (A):(B) = 92:8 It carried out similarly to the film 1(a), and produced the base film 1(n) with a thickness of 90 micrometers of 3 layer structure of the same resin. The thickness of each layer was made into 1st layer (surface side contacting the adhesive layer 2) / 2nd layer / 3rd layer = 30 micrometers/30 micrometers/30 micrometers. The mass ratio of the total amount of the resin (A) comprising the ionomer and the total amount of the polyamide resin (B) in the entire layer is: the total amount of (A): the total amount of (B) = 92:8.

(Base film 1(o))

(IO1) was prepared as resin (A) which consists of an ionomer. Except that the amide resin (B) = (PA1) was not dry blended, in the same manner as in the base film 1 (a), the same resin (resin (A) consisting of an ionomer only) had a three-layer structure with a thickness of 90 μm. The base film 1 (o) was produced. The thickness of each layer was made into 1st layer (surface side contacting the adhesive layer 2) / 2nd layer / 3rd layer = 30 micrometers/30 micrometers/30 micrometers.

(Base film 1(p))

The base material except that the ionomer resin (A) = (IO1) and the polyamide resin (B) = (PA1) were dry blended in a mass ratio of (A): (B) = 97: 3 It carried out similarly to the film 1 (a), and produced the base film 1 (p) with a thickness of 90 micrometers of 3 layer structure of the same resin. The thickness of each layer was made into 1st layer (surface side contacting the adhesive layer 2) / 2nd layer / 3rd layer = 30 micrometers/30 micrometers/30 micrometers. The mass ratio of the total amount of the resin (A) composed of the ionomer and the total amount of the polyamide resin (B) in the entire layer is: the total amount of (A): the total amount of (B) = 97:3.

(Base film 1(q))

The base material except that the ionomer resin (A) = (IO1) and the polyamide resin (B) = (PA1) were dry blended in a mass ratio of (A): (B) = 70:30 It carried out similarly to the film 1(q), and produced the base film 1(q) with a thickness of 90 micrometers of 3 layer structure of the same resin. The thickness of each layer was made into 1st layer (surface side contacting the adhesive layer 2) / 2nd layer / 3rd layer = 30 micrometers/30 micrometers/30 micrometers. The mass ratio of the total amount of the resin (A) comprising the ionomer and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A): the total amount of (B) = 70:30.

(Base film 1(r))

As other resins (C), (PP) and (EVA) were prepared. (PP) was used as the resin for the first and third layers, and (EVA) was used as the resin for the second layer. , it injected|threw-in to each extruder, it shape|molded on the conditions of 150 degreeC of processing temperature, and produced the 80-micrometer-thick base film 1(r) of 2 types 3 layer structure. The thickness of each layer was set to 1st layer (surface side in contact with an adhesive layer)/2nd layer/3rd layer = 8 micrometers/64 micrometers/8 micrometers.

(Base film 1(s))

As other resin (C), (PVC) was prepared. This resin was injected|thrown-in to the extruder using the T-die film molding machine, and it shape|molded on the conditions of 150 degreeC of processing temperature, and the 90-micrometer-thick base film 1(s) of single-layer structure was produced.

[Stress at 5% elongation at -15°C of the base film]

About the base film 1(a)-(s) produced above, in the temperature environment of -15 degreeC, the stress at the time of extending|stretching 5% was calculated|required. As a test piece, when the extrusion direction at the time of melt molding in the T-die is the MD direction, and the direction perpendicular to the MD direction is the TD direction, (1) 70 mm long in the MD direction and 10 mm wide in the TD direction. Two types of the cut test piece, (2) the test piece cut to the magnitude|size of 70 mm length in TD direction, and 10 mm width in MD direction were prepared. Then, using a tensile compression tester manufactured by Minebea Mitsumi Co., Ltd. (model: Minebea Techno Graph TG-5kN), the test piece was placed in a thermostat (model: THB-A13-038) manufactured by Minebea Mitsumi Co., Ltd. - After standing at 15°C for 1 minute, the distance between chucks was set to 50 mm and the elongation speed (tensile speed) was set to 300 mm/min, the test piece was elongated in the longitudinal direction, and elongated by 5% with respect to the initial length (50 mm of the distance between chucks). The strength (unit: N) was measured. The numerical value obtained by dividing the obtained strength by the cross-sectional area (unit: mm ² ) of the tape was defined as the stress (unit: MPa) at 5% elongation at -15°C.

[Heat resistance of base film]

About the base film 1 (a) - (s) produced above, the heat resistance in 140 degreeC was evaluated. A test piece cut to a length of 100 mm in the MD direction and a width of 30 mm in the TD direction was prepared, and a mark line having a length of 60 mm in the MD direction was written with magic in the center of the test piece. Each test piece is suspended in a constant temperature bath (adjusted to 140 ° C.) so that the MD direction is up and down, and a load of 5 g is applied to the lower side of each test piece and stored for 2 minutes in an environment of 140 ° C. It measured and computed the change rate with respect to the mark length L0 (= 60 mm) before a heating test.

Change rate (%)=[(L1-L0)/L0]×100

According to the following criteria, the heat resistance of the base film 1 was evaluated, and evaluation of B or more was judged that heat resistance was favorable.

A: The rate of change was within the range of ±10%.

B: The rate of change exceeded the range of ±10% and was within the range of ±14%.

C: The rate of change was exceeding the range of ±14%.

2. Preparation of solution of pressure-sensitive adhesive composition

As the pressure-sensitive adhesive composition for the pressure-sensitive adhesive layer 2 of the dicing tape 10, solutions of the following active energy ray-curable acrylic pressure-sensitive adhesive compositions 2 (a) to (r) were prepared.

In addition, as a copolymerization monomer component constituting the base polymer (acrylic acid ester copolymer) of these pressure-sensitive adhesive compositions,

-Acrylic acid 2-ethylhexyl (2-EHA, molecular weight: 184.3, Tg: -70 ℃),

· 2-hydroxyethyl acrylate (2-HEA, molecular weight: 116.12, Tg: -15°C);

butyl acrylate (BA, molecular weight: 128.17, Tg: -54 ° C);

Methyl methacrylate (MMA, molecular weight: 100.12, Tg: 105 ° C.),

·Methacrylic acid (MAA, molecular weight: 86.06, Tg: 130 ℃),

prepared

In addition, as a polyisocyanate-based crosslinking agent, Tosoh Corporation

TDI-based polyisocyanate-based crosslinking agent (trade name: Coronate L-45E, solid content concentration: 45 mass%, isocyanate group content in solution: 8.05 mass%, isocyanate group content in solid content: 17.89 mass%, calculated number of isocyanate groups : Average 2.8 pieces/molecule, molecular weight: 656.64),

HDI-based polyisocyanate-based crosslinking agent (trade name: Coronate HL, solid content concentration: 75 mass%, isocyanate group content in solution: 12.8 mass%, isocyanate group content in solid content: 17.07 mass%, calculated number of isocyanate groups: average 2.6 pieces/molecule, molecular weight: 638.75),

prepared

(Solution of active energy ray-curable acrylic pressure-sensitive adhesive composition 2(a))

As the copolymerization monomer component, 2-ethylhexyl acrylate (2-EHA), 2-hydroxyethyl acrylate (2-HEA), and methyl methacrylate (MMA) were prepared. These copolymerization monomer components are mixed so that a copolymerization ratio of 2-EHA/2-HEA/MMA=78.5 parts by mass/21.0 parts by mass/0.5 parts by mass (=425.94 mmol/180.85 mmol/5.81 mmol) is obtained, and acetic acid as a solvent A solution of a base polymer (acrylic acid ester copolymer) having a hydroxyl group was synthesized by solution radical polymerization using ethyl and azobisisobutyronitrile (AIBN) as an initiator. Tg calculated from Fox's formula of the obtained base polymer is -60 degreeC.

Next, with respect to 100 parts by mass of the solid content of this base polymer, 2-isocyanate ethyl meta having an isocyanate group and an active energy ray-reactive carbon-carbon double bond manufactured by Showa Denko Corporation as an active energy ray-reactive compound manufactured by Showa Denko Corporation. 21.0 parts by mass of acrylate (trade name: Karenz MOI, molecular weight: 155.15, isocyanate group: 1 / 1 molecule, double bond group: 1 / 1 molecule) (135.35 mmol: 74.8 mol% with respect to 2-HEA) was blended and , a solution of an acrylic adhesive polymer (A) having a carbon-carbon double bond in a side chain by reacting with some of the hydroxyl groups of 2-HEA (solid content concentration: 50 mass%, weight average molecular weight Mw: 380,000, solid content hydroxyl value: 21.1 mgKOH/g, solid content acid value: 2.7 mgKOH/g, carbon-carbon double bond content: 1.12 mmol/g) was synthesized. In addition, in said reaction, 0.05 mass part of hydroquinone monomethyl ether was used as a polymerization inhibitor for maintaining the reactivity of a carbon-carbon double bond.

Then, with respect to 200 parts by mass of the solution of the acrylic adhesive polymer (A) synthesized above (100 parts by mass in terms of solid content), an α-hydroxyalkylphenone-based photopolymerization initiator (trade name: Omnirad 184) manufactured by IGM Resins B.V. was added to 2.0 Parts by mass, 0.4 parts by mass of an acylphosphine oxide-based photopolymerization initiator (trade name: Omnirad 819) manufactured by IGM Resins B.V., as a crosslinking agent, a TDI-based polyisocyanate-based crosslinking agent manufactured by Tosoh Corporation (trade name: Coronate L-45E, solid content concentration) : 45 mass %) in a ratio of 2.56 mass parts (in terms of solid content 1.15 mass parts, 1.75 mmol), diluted with ethyl acetate and stirred, active energy ray-curable acrylic pressure-sensitive adhesive composition 2 (a) having a solid content concentration of 22 mass% of the solution was prepared. In the active energy ray-curable acrylic pressure-sensitive adhesive composition 2(a), the equivalent ratio (NCO/OH) of the isocyanate group (NCO) of the polyisocyanate-based crosslinking agent and the hydroxyl group (OH) of the acrylic adhesive polymer is 0.13, and the residual hydroxyl group concentration is 0.32 mmol/g, the carbon-carbon double bond content was 1.11 mmol/g.

(Solutions of active energy ray-curable acrylic pressure-sensitive adhesive compositions 2(b) to 2(t))

With respect to the acrylic adhesive polymer (A), as shown in Tables 3 to 6, respectively, by appropriately changing the copolymerization ratio of the copolymerized monomer component, the compounding amount of the active energy ray-reactive compound, and the copolymerized monomer component, the acrylic adhesive polymer (B) to ( Each of the solutions of Q) was synthesized. In the synthesized acrylic adhesive polymers (B) to (Q), Tg of the base polymer, the weight average molecular weight Mw, the acid value, and the hydroxyl group value are as shown in Tables 3 to 6, respectively. Then, using the solution of these acrylic adhesive polymers, with respect to 100 parts by mass of the solid content of the acrylic adhesive polymers (A) to (Q), as shown in Tables 3 to 6, respectively, a photopolymerization initiator and a polyisocyanate-based crosslinking agent were added. It mix|blended suitably, and the solution of active energy ray-curable acrylic adhesive composition 2(b) - 2(t) was prepared. Equivalent ratio (NCO/OH) of the isocyanate group (NCO) which the polyisocyanate type crosslinking agent has and the hydroxyl group (OH) which the acrylic adhesive polymer has in the active energy ray-curable acrylic adhesive composition 2(b) - 2(t), residual The hydroxyl group concentration and the carbon-carbon double bond content are as shown in Tables 3 to 6, respectively.

3. Preparation of solution of adhesive composition

As an adhesive composition for the die-bonding film (adhesive adhesive layer) 3 of the dicing die-bonding film 20, the solution of the following adhesive composition 3(a) - 3(d) was prepared.

(Solution of Adhesive Composition 3(a))

As an object for wire-embedded die-bonding films, the following adhesive composition solution 3 (a) solutions were prepared and prepared. First, as a thermosetting resin, 26 parts by mass of a bisphenol-type epoxy resin manufactured by Printtech Co., Ltd. (trade name: R2710, epoxy equivalent: 170, molecular weight: 340, liquid at room temperature), cresol novolac-type epoxy resin manufactured by Toto Kasei Corporation (trade name) : YDCN-700-10, epoxy equivalent 210, softening point 80° C.) 36 parts by mass, phenol resin manufactured by Mitsui Chemicals Co., Ltd. as a crosslinking agent (trade name: Mirex XLC-LL, hydroxyl equivalent: 175, softening point: 77° C., water absorption: 1 Mass %, heating mass reduction rate: 4 mass %) 1 mass part, Air Water Co., Ltd. phenol resin (brand name: HE200C-10, hydroxyl equivalent: 200, softening point: 71 degreeC, water absorption: 1 mass %, heating mass reduction rate: 4 mass %) 25 mass parts, Air Water Co., Ltd. phenol resin (brand name: HE910-10, hydroxyl equivalent: 101, softening point: 83 degreeC, water absorption: 1 mass %, heating mass reduction rate: 3 mass %) 12 mass parts , 15 parts by mass of silica filler dispersion (trade name: SC2050-HLG, average particle diameter: 0.50 µm) manufactured by Admatex Co., Ltd. as an inorganic filler, silica filler dispersion (trade name: SC1030-HJA, average particle diameter: 0.25) manufactured by Admatex Corporation μm) 14 parts by mass of silica (trade name: Aerosil R972, average particle diameter: 0.016 μm) manufactured by Nippon Aerosil Co., Ltd. In a resin composition consisting of 1 part by mass, cyclohexanone as a solvent is added and mixed with stirring, and a bead mill is further added to the resin composition. was dispersed for 90 minutes.

Next, as a thermoplastic resin in the resin composition, a glycidyl group-containing (meth)acrylic acid ester copolymer manufactured by Nagase Chemtex Co., Ltd. (trade name: HTR-860P-30B-CHN, glycidyl (meth)acrylate content: 8 mass %, weight average molecular weight Mw: 230,000, Tg: -7 ° C.) 37 parts by mass, glycidyl group-containing (meth)acrylic acid ester copolymer manufactured by Nagase Chemtex Co., Ltd. (trade name: HTR-860P-3CSP, glycidyl ( meth) acrylate content: 3 mass %, weight average molecular weight Mw: 800,000, Tg: -7°C) 9 mass parts, γ-ureidopropyltriethoxysilane (trade name: NUC) manufactured by GE Toshiba Corporation as a silane coupling agent A-1160) 0.7 parts by mass, 0.3 parts by mass of γ-ureidopropyltriethoxysilane (trade name: NUC A-189) manufactured by GE Toshiba Corporation, and 1-cyanoethyl-2 manufactured by Shikoku Kasei Corporation as a curing accelerator -Phenylimidazole (trade name: Qazole 2PZ-CN) 0.03 parts by mass, stirred and mixed, filtered through a 100-mesh filter, vacuum degassed, and a solution of adhesive composition 3(a) having a solid content concentration of 20 mass% was prepared The content ratio of each resin component in the total amount of the resin component (the total mass of the thermoplastic resin, the thermosetting resin and the crosslinking agent) is: glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 31.5 mass%: 42.5 mass %: It was 26.0 mass %. In addition, content of an inorganic filler was 20.5 mass % with respect to resin component whole quantity.

(Solution of Adhesive Composition 3(b))

As an object for wire-embedded die-bonding films, the following adhesive composition solution 3(b) solutions were prepared and prepared. First, as a thermosetting resin, 21 parts by mass of bisphenol F-type epoxy resin manufactured by Toto Kasei Corporation (trade name: YDF-8170C, epoxy equivalent: 159, molecular weight: 310, liquid at room temperature), cresol novolac-type epoxy manufactured by Toto Kasei Corporation as a thermosetting resin Resin (brand name: YDCN-700-10, epoxy equivalent 210, softening point 80° C.) 33 parts by mass, phenol resin manufactured by Air Water Corporation as a crosslinking agent (trade name: HE200C-10, hydroxyl equivalent weight: 200, softening point: 71° C., water absorption : 1 mass %, heating mass reduction rate: 4 mass %) 46 mass parts, 18 mass parts of a silica filler dispersion (trade name: SC1030-HJA, average particle diameter: 0.25 µm) manufactured by Admatex Corporation as an inorganic filler, a resin composition comprising Then, cyclohexanone was added as a solvent, stirred and mixed, and further dispersed for 90 minutes using a bead mill.

Next, as a thermoplastic resin in the resin composition, a glycidyl group-containing (meth)acrylic acid ester copolymer manufactured by Nagase Chemtex Co., Ltd. (trade name: HTR-860P-30B-CHN, glycidyl (meth)acrylate content: 8 mass %, weight average molecular weight Mw: 230,000, Tg: -7°C) 16 parts by mass, glycidyl group-containing (meth)acrylic acid ester copolymer manufactured by Nagase Chemtex Co., Ltd. (trade name: HTR-860P-3CSP, glycidyl ( meth)acrylate content: 3% by mass, weight average molecular weight Mw: 800,000, Tg: -7°C) 64 parts by mass, γ-ureidopropyltriethoxysilane (trade name: NUC) manufactured by GE Toshiba Corporation as a silane coupling agent A-1160) 1.3 parts by mass, 0.6 parts by mass of γ-ureidopropyltriethoxysilane (trade name: NUC A-189) manufactured by GE Toshiba Corporation, and 1-cyanoethyl-2 manufactured by Shikoku Kasei Corporation as a curing accelerator -Phenylimidazole (trade name: Qazole 2PZ-CN) 0.05 parts by mass was added, stirred and mixed, filtered through a 100-mesh filter, vacuum degassed, and a solution of adhesive composition 3(b) having a solid content concentration of 20% by mass was prepared The content ratio of each resin component in the total amount of the resin component (the total mass of the thermoplastic resin, the thermosetting resin and the crosslinking agent) is: glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 44.4 mass %: 30.0 mass %: It was 25.6 mass %. In addition, content of an inorganic filler was 10.0 mass % with respect to resin component whole quantity.

(Solution of Adhesive Composition 3(c))

As an object for wire-embedded die-bonding films, the following adhesive composition solution 3(c) solutions were prepared and prepared. First, as a thermosetting resin, 11 parts by mass of a bisphenol type epoxy resin manufactured by Printtech Corporation (trade name: R2710, epoxy equivalent: 170, molecular weight: 340, liquid at room temperature), dicyclopentadiene type epoxy resin manufactured by DIC Corporation (trade name) : HP-7200H, epoxy equivalent 280, softening point 83° C.) 40 parts by mass, DIC Corporation bisphenol S-type epoxy resin (trade name: EXA-1514, epoxy equivalent 300, softening point 75° C.) 18 parts by mass, Mitsui Chemicals as a crosslinking agent 1 part by mass of phenolic resin manufactured by Corporation (trade name: Mirex XLC-LL, hydroxyl equivalent: 175, softening point: 77°C, water absorption: 1% by mass, heating mass reduction rate: 4% by mass), phenol resin manufactured by Air Water Corporation (Brand name: HE200C-10, hydroxyl equivalent: 200, softening point: 71° C., water absorption: 1 mass %, heating mass reduction rate: 4 mass %) 20 parts by mass, Air Water Co., Ltd. phenolic resin (trade name: HE910-10, Hydroxyl equivalent: 101, softening point: 83° C., water absorption: 1 mass %, heating mass reduction rate: 3 mass %) 10 parts by mass, silica filler dispersion liquid manufactured by Admatex Corporation as an inorganic filler (trade name: SC1030-HJA, average particle size: 0.25 μm) 24 parts by mass of silica (trade name: Aerosil R972, average particle diameter: 0.016 μm) manufactured by Nippon Aerosil Co., Ltd. To a resin composition comprising 0.8 parts by mass, cyclohexanone as a solvent is added and mixed with stirring, and further bead milling was dispersed for 90 minutes.

Next, as a thermoplastic resin in the resin composition, a glycidyl group-containing (meth)acrylic acid ester copolymer manufactured by Nagase Chemtex Co., Ltd. (trade name: HTR-860P-30B-CHN, glycidyl (meth)acrylate content: 8 mass %, weight average molecular weight Mw: 230,000, Tg: -7°C) 30 parts by mass, glycidyl group-containing (meth)acrylic acid ester copolymer manufactured by Nagase Chemtex Co., Ltd. (trade name: HTR-860P-3CSP, glycidyl ( meth)acrylate content: 3% by mass, weight average molecular weight Mw: 800,000, Tg: -7°C) 7.5 parts by mass, γ-ureidopropyltriethoxysilane (trade name: NUC) manufactured by GE Toshiba Corporation as a silane coupling agent A-1160) 0.57 parts by mass, 0.29 parts by mass of γ-ureidopropyltriethoxysilane (trade name: NUC A-189) manufactured by GE Toshiba Corporation, and 1-cyanoethyl-2 manufactured by Shikoku Kasei Corporation as a curing accelerator -Phenyl imidazole (trade name: Qazole 2PZ-CN) 0.023 parts by mass was added, stirred and mixed, filtered through a 100 mesh filter, vacuum degassed, and a solution of adhesive composition 3(c) having a solid content concentration of 20 mass% prepared The content ratio of each resin component in the total amount of the resin component (total mass of the thermoplastic resin, thermosetting resin and crosslinking agent) is: glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 27.3 mass %: 50.2 mass %: It was 22.5 mass %. In addition, content of an inorganic filler was 18.0 mass % with respect to resin component whole quantity.

(Solution of Adhesive Composition 3(d))

As for general-purpose die-bonding films, the following adhesive composition 3(d) solutions were prepared and prepared. First, 54 parts by mass of a cresol novolac-type epoxy resin manufactured by Toto Kasei Corporation as a thermosetting resin (brand name: YDCN-700-10, epoxy equivalent 210, softening point 80° C.), and a phenol resin manufactured by Mitsui Chemicals Corporation as a crosslinking agent (trade name: Mitsui) Rex XLC-LL, hydroxyl equivalent: 175, water absorption: 1.8%) 46 parts by mass, Nippon Aerosil Co., Ltd. silica (trade name: Aerosil R972, average particle diameter 0.016 µm) 32 parts by mass, as an inorganic filler, in a resin composition comprising , cyclohexanone was added as a solvent, stirred and mixed, and further dispersed for 90 minutes using a bead mill.

Next, in the above resin composition, a glycidyl group-containing (meth)acrylic acid ester copolymer (trade name: HTR-860P-3CSP, glycidyl (meth)acrylate content: 3% by mass, manufactured by Nagase Chemtex Co., Ltd. as a thermoplastic resin; Weight average molecular weight Mw: 800,000, Tg: -7°C) 274 parts by mass, 5.0 parts by mass of γ-ureidopropyltriethoxysilane (trade name: NUC A-1160) manufactured by GE Toshiba Co., Ltd. as a silane coupling agent, GE Toshiba 1.7 parts by mass of γ-ureidopropyltriethoxysilane (trade name: NUC A-189) manufactured by Corporation, and 1-cyanoethyl-2-phenylimidazole manufactured by Shikoku Kasei Corporation as a curing accelerator (trade name: Qazole) After adding 0.1 mass parts of 2PZ-CN), stirring and mixing, and filtering with a 100-mesh filter, it vacuum degassed and prepared the solution of adhesive composition 3(d) with a solid content concentration of 20 mass %. The content ratio of each resin component in the total amount of the resin component (the total mass of the thermoplastic resin, the thermosetting resin and the crosslinking agent) is: glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 73.3 mass %: 14.4 mass %: 12.3 mass %. In addition, content of an inorganic filler was 8.6 mass % with respect to resin component whole quantity.

4. Production of the dicing tape 10 and the dicing die bond film 20

(Example 1)

The solution of the active energy ray-curable acrylic pressure-sensitive adhesive composition (a) is applied to the release treatment surface side of the release liner (thickness 38 μm, polyethylene terephthalate film) so that the thickness of the pressure-sensitive adhesive layer 2 after drying becomes 8 μm, and 100° C. After drying a solvent by heating at the temperature of 3 minutes, the 1st layer side surface of the base film 1 (a) was bonded together on the adhesive layer 2, and the original fabric of the dicing tape 10 was produced. Thereafter, the original fabric of the dicing tape 10 was stored at a temperature of 23° C. for 96 hours to crosslink and harden the pressure-sensitive adhesive layer 2 .

Next, prepare a solution of the adhesive composition 3(a) for forming the die-bonding film (adhesive layer) 3, and dry the die-bonding film ( The solution of the adhesive composition 3(a) is applied so that the thickness of the adhesive layer) (3) becomes 50 µm, and first heated at a temperature of 90°C for 5 minutes and then heated at a temperature of 140°C for 5 minutes in two steps. By doing so, the solvent was dried, and the die-bonding film (adhesive agent layer) 3 provided with the release liner was produced. In addition, you may bond a protective film (for example, a polyethylene film etc.) to the dry surface side of the die-bonding film (adhesive adhesive layer) 3 as needed.

Next, the die-bonding film (adhesive layer) 3 with the release liner produced above is cut into a circular shape with a diameter of 335 mm for each release liner, and the adhesive layer of the die-bonding film (adhesive layer) 3 is The exposed surface (the surface without a release liner) was pasted together to the adhesive layer 2 surface of the said dicing tape 10 from which the release liner was peeled. Bonding conditions were made into 23 degreeC, 10 mm/sec, and a linear pressure of 30 kgf/cm.

Finally, by cutting the dicing tape 10 in a circle having a diameter of 370 mm, a die bond film having a diameter of 335 mm is placed on the upper center of the pressure-sensitive adhesive layer 2 of the circular dicing tape 10 having a diameter of 370 mm. A dicing die-bonding film 20 (DDF(a)) on which (adhesive layer) 3 was laminated was produced.

(Examples 2-14)

The dicing die-bonding film 20 (DDF ( b) to DDF(n)) were prepared. However, only about Example 10 and Example 12, the thickness of the adhesive layer 2 was 7 micrometers and 15 micrometers, respectively.

(Examples 15-27)

Example 2 all except having changed the solution of active energy ray-curable acrylic adhesive composition 2(a) into the solution of active energy ray-curable acrylic adhesive composition 2(b) - 2(n) shown in Tables 3-5, respectively It carried out similarly to the dicing die-bonding film 20 (DDF(o) - DDF(aa)) was produced.

(Example 28)

Except having changed the thickness of the adhesive layer 2 after drying to 6 micrometers, it carried out similarly to Example 2, and produced the dicing die-bonding film 20 (DDF(bb)).

(Example 29)

Except having changed the thickness of the adhesive layer 2 after drying into 20 micrometers, all carried out similarly to Example 2, and produced the dicing die-bonding film 20 (DDF(cc)).

(Example 30)

Except for changing the solution of the adhesive resin composition 3 (a) to the solution of the adhesive composition 3 (b), and changing the thickness of the die-bonding film (adhesive layer) 3 after drying to 30 µm, everything is the same as in Example 2 Similarly, the dicing die-bonding film 20 (DDF (dd)) was produced.

(Example 31)

A dicing die-bonding film 20 (DDF(ee)) was produced in the same manner as in Example 2, except that the solution of the adhesive resin composition 3(a) was changed to the solution of the adhesive composition 3(c).

(Example 32)

Except for changing the solution of the adhesive resin composition 3 (a) to the solution of the adhesive composition 3 (d), and changing the thickness of the die-bonding film (adhesive layer) 3 after drying to 20 μm, everything is the same as in Example 2 Similarly, the dicing die-bonding film 20 (DDF(ff)) was produced.

(Comparative Examples 1 to 6)

The base film 1 (a) was changed to the base film 1 (o), and the solutions of the active energy ray-curable acrylic adhesive composition 2 (a) were respectively shown in Table 7, the active energy ray-curable acrylic adhesive compositions 2 (o) to 2 Except having changed to the solution of (t), all were carried out similarly to Example 1, and produced the dicing die-bonding film 20 (DDF(gg) - DDF(ll)).

(Comparative Examples 7 to 12)

All the same as Example 2 except having changed the solution of active energy ray-curable acrylic adhesive composition 2(a) into the solution of active energy ray-curable acrylic adhesive composition 2(o) - 2(t) shown in Table 8, respectively. Thus, a dicing die-bonding film 20 (DDF (mm) to DDF (rr)) was produced.

(Comparative Example 13)

Except having changed the base film 1 (a) into the base film 1 (o), it carried out similarly to Example 1, and produced the dicing die-bonding film 20 (DDF(ss)).

(Comparative Example 14)

Except having changed the base film 1 (a) into the base film 1 (p), it carried out similarly to Example 1, and produced the dicing die-bonding film 20 (DDF(tt)).

(Comparative Example 15)

Except having changed the base film 1 (a) into the base film 1 (q), it carried out similarly to Example 1, and produced the dicing die-bonding film 20 (DDF(uu)).

(Comparative Example 16)

Except having changed the base film 1 (a) into the base film 1 (r), all carried out similarly to the comparative example 1, and produced the dicing die-bonding film 20 (DDF(vv)).

(Comparative Example 17)

Except having changed the base film 1 (a) into the base film 1 (s), all carried out similarly to the comparative example 1, and produced the dicing die-bonding film 20 (DDF (ww)).

5. Evaluation method of dicing die bond film

About the dicing tape 10 and the dicing die-bonding film 20 (DDF(a)-DDF(ww)) produced in Examples 1-32 and Comparative Examples 1-17, various measurement by the method shown below and evaluation.

5.1 Measurement of Shear Viscosity at 80°C of Die Bond Film (Adhesive Layer) (3)

About each die-bonding film (adhesive layer) 3 formed from the solution of adhesive composition 3(a) - 3(d), the shear viscosity in 80 degreeC was measured by the following method. That is, the die-bonding film (adhesive agent layer) 3 from which the peeling liner was removed was bonded together at 70 degreeC in multiple sheets so that total thickness might be set to 200-210 micrometers, and the laminated body was produced. Next, the laminate was punched in a size of 10 mm x 10 mm in the thickness direction to obtain a measurement sample. Then, using the dynamic viscoelasticity apparatus ARES (made by Rheometric Scientific F.), after attaching the circular aluminum plate jig of diameter 8mm, the measurement sample was set. The shear viscosity was measured while the measurement sample was heated at a temperature increase rate of 5°C/min while applying a strain of 5% at 35°C to the measurement sample, and the value of the shear viscosity at 80°C was determined.

5.2 Measurement of adhesive force after UV irradiation of the pressure-sensitive adhesive layer (2) of the dicing tape (10) to the die-bonding film (adhesive layer) (3)

The dicing tape 10 and the die-bonding film (adhesive agent layer) 3 produced by each Example and the comparative example were respectively prepared. The dicing tape 10 has a width (TD direction of the base film 1) of 30 mm and a length (MD direction of the base film 1) of 300 mm, and the die-bonding film 20 has a width of 30 mm. , cut to a size of 100 mm in length. The exposed surface of the adhesive layer (the side without the release liner) of the die-bonding film (adhesive layer) 3 in a portion 100 mm from the edge of the side of the pressure-sensitive adhesive layer 2 from which the release liner was peeled off of the dicing tape 10, In an environment of a temperature of 23°C and a humidity of 50% RH, it was laminated and bonded together neatly, pressure-bonding using a 2 kg rubber roller. After this laminate was cured in an environment of 5°C for 24 hours, in an environment of a temperature of 23°C and a humidity of 50% RH, a 2 kg rubber roller was used on the side from which the release liner of the die-bonding film (adhesive layer) 3 was peeled off. Then, the adhesive layer side surface of the OPP film base material single-sided adhesive tape 11 (trade name: easy-cut tape 207H, 70 micrometers in thickness) made from Wangzhou Co., Ltd. was bonded together while crimping|bonding, and the backing was carried out. This laminate was cut again with the blade of a new cutter so that the width might be 25 mm, and it was set as the test piece as shown to Fig.11 (a). Next, as shown in Fig. 11(b), the surface of the test piece on the side of the OPP film base material single-sided adhesive tape 11 was subjected to an angle-free adhesive/film peel analyzer (model: VPA-2S, Kyo). At the center of the flat plate cross stage for Wagye-myeon Science Co., Ltd.), a paper double-sided adhesive tape 12 (trade name: No. 5486, thickness 140 µm) manufactured by Maxell Co., Ltd. was used and fixed while being compressed with a 2 kg rubber roller. . Then, from the base film 1 side of the dicing tape 10 of the dicing die-bonding film 20, using a metal halide lamp, ultraviolet rays (UV) having a central wavelength of 365 nm were irradiated (irradiation intensity: 70 mW/cm). ² , integrated light quantity 150 mJ/cm ² ), the flat plate cross stage to which the test piece is fixed is mounted on an angular material type adhesion/film peeling analyzer, and in an environment of temperature 23° C. and humidity 50% RH, FIG. 11(c) ) (schematic view of the apparatus viewed from directly above), the dicing tape 10 side is pulled under the conditions of a peeling angle of 30° and a peeling rate of 600 mm/min (actually, the flat plate cross stage moves) , the low-angle (peel angle 30°) adhesive force (unit: N/25 mm) of the dicing tape 10 to the die-bonding film (adhesive layer) 3 was measured (average value of test piece N=3).

5.3 Shear adhesive force at -30°C of the pressure-sensitive adhesive layer 2 of the dicing tape 10 to the die-bonding film 3 (adhesive layer)

A dicing tape 10 and a die-bonding film (adhesive layer) 3 were prepared, respectively. The dicing tape 10 is a backing tape on the base film 1 side, the PET film base single-sided adhesive tape 14 (trade name: No. 626001, thickness 55 µm) manufactured by Maxell Corporation as a backing tape, the side on the side of the adhesive layer, After bonding together, crimping|bonding using a 2 kg rubber roller, it cut out to the magnitude|size of 10 mm of width (TD direction of the base film 1), and length (MD direction of the base film 1) 100 mm. In addition, the die-bonding film 20 was cut to a size of 30 mm in width and 100 mm in length. In addition, as the die-bonding film 20, the thing equipped with the protective film (polyethylene film) on the dry surface side of the die-bonding film (adhesive agent layer) 3 was used. First, the surface of the die-bonding film 20 from which the release liner has been carefully peeled off is placed on the surface of the semiconductor wafer W (silicon mirror wafer, width 40 mm, length 100 mm, thickness 0.725 mm) using a 2 kg rubber roller. After bonding, crimping|bonding, it pinched|interposed with two glass plates, and the load of 2 kg was crimped|bonded over 1 minute under the temperature of 40 degreeC. Next, both end surfaces of the semiconductor wafer W to which this die-bonding film (adhesive layer) 3 was adhered were applied to the SUS plate 15, and a PET film base single-sided adhesive tape 14 manufactured by Maxell Corporation (trade name: No. 626001, thickness 55 µm), the protective film of the die-bonding film (adhesive layer) 3 was peeled off, and it was set as the to-be-adhered body of the shear adhesive force test. Next, on the surface of the die-bonding film (adhesive layer) 3 of the adherend, the surface of the pressure-sensitive adhesive layer 2 from which the release liner of the dicing tape 10 has been peeled is in close contact with a portion 10 mm in the longitudinal direction from the edge, That is, the size of the contact surface is 10 mm × 10 mm (adherence area: 100 mm ² ), and is pressed with a 2 kg rubber roller, and cured for 20 minutes in an environment of a temperature of 23 ° C. and a humidity of 50% RH, Fig. 12 (The PET film base material single-sided adhesive tape 14 for fixation is not shown in figure) The test object as shown to it was obtained. Then, using a tensile compression tester manufactured by Minebea Mitsumi Co., Ltd. (model: Minebea Techno Graph TG-5kN), the test object was placed in a thermostat (type: THB-A13-038) manufactured by Minebea Mitsumi Co., Ltd. at -30°C , after being placed for 1 minute, it was pulled in the vertical direction at a speed of 1,000 mm/min, and the adhesive force in the shear direction required at that time (unit: N/100 mm ² ) was measured (average value of test piece N=3).

5.4 Evaluation of stealth dicing properties of the dicing die bond film 20

5.4.1 Semiconductor wafer cleavability and die bond film (adhesive layer) cleavability

First, a semiconductor wafer (silicon mirror wafer, 750 µm in thickness, 12 inches in outer diameter) W was prepared, and a commercially available backgrinding tape was affixed on one surface. Next, from the side opposite to the side to which the backgrinding tape of the semiconductor wafer W was pasted, a stealth dicing laser saw made by Disco Corporation (device name: DFL7361) was used, and the size of the semiconductor chip 30a after cutting was 4.7 mm. The modified region 30b was formed at a position of a predetermined depth of the semiconductor wafer W by irradiating a laser beam under the following conditions along the grid-like division line line so as to have a size of 7.2 mm.

・Laser irradiation conditions

(1) Laser oscillator type: semiconductor laser excitation Q-switched solid-state laser

(2) Wavelength: 1342nm

(3) Oscillation type: pulse

(4) Frequency: 90kHz

(5) Output: 1.7W

(6) The moving speed of the mounting table of the semiconductor wafer: 700 mm/sec.

Next, using a backgrinding device (device name: DGP8761) manufactured by Disco Corporation, the semiconductor wafer W having a thickness of 750 μm in which the modified region 30b held by the backgrinding tape is formed is ground and thinned to 30 μm in thickness. A semiconductor wafer 30 of Then, the semiconductor wafer cleavage property and adhesive bond layer cleavage property which are one of the parameter|index items of stealth dicing property were evaluated by implementing a cool expand process by the following method. Specifically, the dicing produced in each Example and Comparative Example on the opposite side to the side on which the backgrinding tape of the semiconductor wafer 30 having a thickness of 30 μm in which the modified region 30b obtained by the above method was formed was affixed. Dicing die bonding to the semiconductor wafer 30 using a laminating apparatus manufactured by Disco Corporation (device name: DFM2800) so that the adhesive layer 3 exposed by peeling the release liner from the die-bonding film 20 adheres. While bonding the film 20 under the conditions of a lamination temperature of 70° C. and a lamination speed of 10 mm/sec, a ring frame (wafer ring) 40 is attached to the exposed portion of the pressure-sensitive adhesive layer 2 at the edge of the dicing tape 10. After sticking, the back grinding tape was peeled. In addition, here, the dicing die-bonding film 20 has the MD direction of the base film 1 and the vertical line direction of the grid-like division|segmentation line of the semiconductor wafer 30 (TD direction of the base film 1 and It is affixed to the semiconductor wafer 30 so that the horizontal line direction of the grid-shaped division|segmentation line of the semiconductor wafer 30 may coincide.

A laminate (semiconductor wafer 30/adhesive layer 3)/adhesive layer (2)/substrate including a semiconductor wafer 30 after formation of a modified region 30b held by the ring frame (wafer ring) 40 The film (1)) was fixed to the expand device (device name: DDS2300 Fully Automatic Die Separator) manufactured by Disco Corporation. Next, by cool-expanding the dicing tape 10 (adhesive layer 2/base film 1) of the dicing die-bonding film 20 accompanying the semiconductor wafer 30 under the following conditions, the semiconductor The wafer 30 and the adhesive layer 3 were cut. Thus, the semiconductor chip 30a having the die-bonding film (adhesive layer) 3 was obtained. In addition, in this Example, although the cool expand process was implemented under the following conditions, expand conditions ("expand speed" and "expand amount", etc.) were appropriately adjusted depending on the physical properties and temperature conditions of the base film 1, etc. What is necessary is just to implement a cool expand process after adjustment.

・Conditions of the cool expand process

Temperature: -15℃, cooling time: 80 seconds,

Expand speed: 300mm/sec,

Expand amount: 11mm,

(4) Standby time: 0 seconds

With respect to the semiconductor wafer 30 and the adhesive layer 3 after the cool expansion, from the front side of the semiconductor wafer 30, using an optical microscope (model: VHX-1000) manufactured by Kiens Corporation, by observing at a magnification of 200 times , the number of uncleaved edges among the sides scheduled to be cut was counted. Then, for each of the semiconductor wafer 30 and the adhesive layer 3, from the total number of sides scheduled to be cut and the total number of sides not to be cut, the ratio of the number of cut edges to the total number of edges scheduled to be cut is calculated as the cut rate ( %) was calculated. The observation location by the said optical microscope was performed with respect to the whole surface of the semiconductor wafer 30. FIG. According to the following criteria, cleavability was evaluated about each of the semiconductor wafer 30 and the adhesive bond layer 3, and evaluation of B or more was judged to be favorable.

A: The cleavage rate was 95% or more and 100% or less.

B: The cleavage rate was 90% or more and less than 95%.

C: The cleavage rate was less than 90%.

5.4.2 Peeling (lifting) of the dicing tape 10 from the pressure-sensitive adhesive layer 2 of the die-bonding film (adhesive layer) 3

After canceling the cool expand state, an expand device manufactured by Disco Corporation (device name: DDS2300 Fully Automatic Die Separator) is used again and the heat expander unit performs the room temperature expand process under the following conditions. did.

Conditions of room temperature expand process

Temperature: 23℃,

Expand speed: 30mm/sec,

Expand amount: 9mm,

(4) Standby time: 15 seconds

Next, while maintaining the expanded state, the dicing tape 10 was adsorbed on the adsorption table, and the adsorption table was lowered together with the work while maintaining the adsorption by the adsorption table. And the heat shrink process was implemented on condition of the following, and the peripheral part outside the semiconductor chip 30a holding area|region in the dicing tape 10 was heat-shrinked (heat shrink).

・Conditions for heat shrink process

Hot air temperature: 200℃,

Air volume: 40L/min;

The distance between the hot air outlet and the dicing tape 10: 20 mm,

Rotational speed of stage: 7°/sec

Subsequently, after releasing the dicing tape 10 from the suction by the suction table, the die-bonding film (adhesive layer) 3 is attached to the dicing tape 10 in the periphery of each of the cut semiconductor chips. The state peeled from the adhesive layer 2 was observed at the magnification of 50 times from the surface side of the semiconductor wafer 30 using the optical microscope (model: VHX-1000) manufactured by Kiens Corporation. Since the state of peeling of the die-bonding film (adhesive layer) 3 was observed in substantially the same state also in the semiconductor chip 30a of any position, the number of observations of the semiconductor chip which has a die-bonding film in the said evaluation. was set as 20 predetermined pieces located in the central portion of the semiconductor wafer 30, and the average peeling state was observed. Peeling (floating) from the pressure-sensitive adhesive layer 2 of the dicing tape 10 of the die-bonding film (adhesive layer) 3 in the dicing die-bonding film 20 when expanded according to the following standards ) was evaluated, and evaluation of B or higher was judged favorable.

A: Peeling from the pressure-sensitive adhesive layer of the die-bonding film was not observed.

B: Although peeling of the die-bonding film from the pressure-sensitive adhesive layer was slightly observed in all directions of the semiconductor chip, the ratio of the area of the portion where peeling was observed was less than 20% with respect to the total area of the semiconductor chip.

C: Peeling of the die-bonding film from the pressure-sensitive adhesive layer was clearly observed in all directions of the semiconductor chip, and the ratio of the area of the portion where peeling was observed was 20% or more with respect to the total area of the semiconductor chip.

5.4.3 Extensibility of the dicing tape 10 in the dicing die bond film 20 (kerf width)

In order to evaluate the level of peeling (lifting) of the dicing tape 10 from the pressure-sensitive adhesive layer 2 of the die-bonding film (adhesive layer) 3, in the normal temperature expand step, from the adsorption by the adsorption table When the dicing tape 10 is released, at the same time, the distance (kerf width) between adjacent semiconductor chips 30a in that state is measured from the surface side of the semiconductor wafer 30 using an optical microscope manufactured by Geiens Corporation (model). : VHX-1000) was used, and the expandability of the dicing tape 10 in the dicing die-bonding film 20 was evaluated by observing and measuring at a magnification of 200 times.

Specifically, in the central portion 31 of the semiconductor wafer 30 shown in FIG. 11 , four places of one cleavage cross-line portion formed of four adjacent semiconductor chips 30a (the MD direction of the base film 1 ) : cuff MD1 and cuff MD2 two places, TD direction of the base film 1: cuff TD1 and cuff TD2 two places, see FIG. 12), six adjacent semiconductor chips 30a in the left side part 32 Seven places of the two cleaved cross-line portions to be formed (MD direction: 3 places of cuff MD3 - cuff MD5, TD direction: 4 places of cuff TD3 - cuff TD6, not shown), adjacent in the right side part 33 Seven places of the two cleaved cross-line portions formed of the six semiconductor chips 30a (MD direction: 3 places of cuff MD6 - Cuff MD8, TD direction: 4 places of cuff TD7 - Cuff TD10, not shown), upper (not shown) 34), seven places of two cleaved cross-line portions formed of six adjacent semiconductor chips 30a (MD direction: 4 places of cuff MD9 - cuff MD12, TD direction: 3 places of cuff TD11 - cuff TD13; (not shown), and seven places of two cleaved cross-line portions formed of six adjacent semiconductor chips 30a in the lower part 35 (MD direction: 4 places of cuff MD13 to kerf MD16, TD direction: cuff For a total of 32 places (16 places in the MD direction, 16 places in the TD direction) of TD14 to 3 places of the cuff TD16 (not shown), the separation distance between the adjacent semiconductor chips 30a is measured, and the distance between them is measured in the MD direction. The average value of 16 places was computed as MD direction cuff width, and the average value of 16 places in TD direction was computed as TD direction cuff width, respectively. According to the following criteria, the expandability of the dicing tape 10 in the dicing die-bonding film 20 was evaluated, and evaluation of B or more was judged to be favorable in expandability.

A: Any value of the kerf width in the MD direction and the kerf width in the TD direction was 30 µm or more.

B: The value of the kerf width in the MD direction was 30 µm or more, and the value of the kerf width in the TD direction was 25 µm or more and less than 30 µm.

C: Any value of the kerf width in the MD direction and the kerf width in the TD direction was less than 25 µm.

5.5 Evaluation of pick-up properties of the dicing tape 10 in the dicing die-bonding film 20

From the base film 1 side of the dicing tape 10 holding the semiconductor chip 30a which has the die-bonding film (adhesive layer) 3a cut into pieces by the said expand process, irradiation intensity It was set as the pick-up property evaluation sample by irradiating the ultraviolet-ray (UV) of center wavelength 365nm and hardening the adhesive layer ² so that the accumulated light amount might be set to 150mJ/cm2 at 70mW/cm< ² >.

Then, the pickup test was done using the apparatus (device name: die bonder DB-830P) which has a pickup mechanism of the Passford Technology Co., Ltd. product (former Hitachi High Technologies). The size of the pickup collet is 4.5 x 7.1 mm, and the number of pins of the push-up pin is 12. For the conditions of the pickup, the push-up speed of the push-up pin is set to 10 mm/sec, and the push-up height of the push-up pin is set to 200. It was set as micrometer. Assuming that the number of samples of the pick-up try is 50 (chips) at a predetermined position, the pick-up property of the dicing tape 10 in the dicing die-bonding film 20 is evaluated according to the following criteria, B It was judged that pick-up property was favorable in the above evaluation.

A: 50 chips were picked up continuously, and the number (the number of pickup successes) in which chip cracks or pickup misses did not occur was 48 or more and 50 or less.

B: 50 chips were picked up continuously, and the number (the number of pickup successes) in which chip cracks or pickup misses did not occur was 45 or more and less than 48.

C: 50 chips were picked up continuously, and the number (the number of successful pickups) in which chip cracks or pickup misses did not occur was less than 45.

6. Evaluation Results

About each evaluation result about the dicing tape 10 and the dicing die-bonding film 20 (DDF(a)-DDF(ww)) produced in Examples 1-32 and Comparative Examples 1-17, dicing It shows in Tables 1-9 according to the structure of the tape 10 and the dicing die-bonding film 20, the structure of the used base film 1, etc.

As shown in Tables 1-6, the base film 1 (a) - (n) which satisfy|fills the requirements of this invention, and the adhesive layer 2 containing adhesive compositions 2 (a) - 2 (n) were provided About the dicing die-bonding films 20 (DDF(a)-DDF(ff)) of Examples 1-32 produced using the dicing tape 10, when supplied to the manufacturing process of a semiconductor device, stealth It was confirmed that a preferable result was obtained also in any evaluation of dicing property and pick-up property. Moreover, evaluation of heat resistance was also favorable.

When comparing the examples in detail, in Examples 2 to 4, Examples 7 and 8, Examples 10 to 14, Examples 20, 22, 23 and Examples 30 to 32 in the dicing die bond film 20 About it, in evaluation of stealth dicing property and pick-up property, it was compatible at a high level, and it turned out that it was especially excellent. About heat resistance, it turned out that it becomes more favorable when the content rate of the polyamide resin (B) in the base film 1 becomes large, evidently from the evaluation result of the dicing die-bonding film 20 of Examples 3-6. .

About the dicing die-bonding film 20 of Example 1 and Example 9, the stress at the time of 5% elongation in -15 degreeC of TD direction of the base film 1 was 15.8 MPa and 16.0 MPa, respectively, and slightly Since it was small, the severability of the die-bonding film 3 was slightly inferior. Moreover, the extensibility of the dicing tape 10 was also slightly inferior. In addition, about the dicing die-bonding film 20 of Example 16, the equivalent ratio (NCO/OH) of the isocyanate group (NCO) which the polyisocyanate-type crosslinking agent has in the pressure-sensitive adhesive composition, and the hydroxyl group (OH) which the acrylic pressure-sensitive adhesive polymer has. Since is 0.02 and the lower limit of the range, the cohesive force of the adhesive layer 2 became small a little, and the cleavability of the die-bonding film 3 was slightly inferior. Moreover, the low-angle adhesive force after UV irradiation was slightly large, and the pickup property was also slightly inferior. Further, similarly also about the dicing die-bonding film 20 of Example 26, since the equivalent ratio (NCO/OH) in the pressure-sensitive adhesive composition is slightly small, the cohesive force of the pressure-sensitive adhesive layer 2 becomes slightly small, and the die bond The cleavability of the film 3 was slightly inferior. In addition, since the active energy ray-reactive carbon-carbon double bond concentration of the pressure-sensitive adhesive composition is 0.85 mmol/g and is the lower limit of the range, the low-angle adhesive force after UV irradiation is slightly large, and also the influence of the weight average molecular weight Mw of the acrylic pressure-sensitive adhesive polymer Combined, the floating|lifting of the die-bonding film 3 was also seen slightly, and the pick-up property was also slightly inferior.

In addition, about the dicing die-bonding film 20 of Examples 5 and 6, the mass ratio (A) of the resin (A) which consists of an ionomer and the polyamide resin (B) in the whole base film 1 ): (B) has a slightly large content ratio of 74:26, 72:28 and polyamide resin (B), respectively, so the low-angle adhesive force after UV irradiation is slightly large due to the influence of the rigidity of the base film (1), Pickup performance was slightly inferior. In addition, about the dicing die-bonding film 20 of Example 17, since the residual hydroxyl group concentration after the crosslinking reaction in an adhesive composition is 0.90 mmol/g, and is the upper limit of a range, the die-bonding film in -30 degreeC The shear adhesive force of the adhesive layer (2) before UV irradiation with respect to (3) was slightly large, and the pick-up property was slightly inferior. Further, for the dicing die-bonding film 20 of Example 18, the active energy ray reactive carbon-carbon double bond concentration of the pressure-sensitive adhesive composition is 0.85 mmol/g, which is the lower limit of the range, so the low-angle adhesive force after UV irradiation It was slightly large, and the pickup performance was slightly inferior. Further, with respect to the dicing die-bonding film 20 of Example 21, the glass transition temperature of the main chain of the acrylic adhesive polymer in the pressure-sensitive adhesive composition is slightly higher, while butyl acrylate (BA), which is a copolymer component of the acrylic adhesive polymer, is Although it is presumed that this is because interaction with the die-bonding film 3 is strong, the floating of the die-bonding film 3 is not seen, but the pressure-sensitive adhesive layer before UV irradiation to the die-bonding film 3 at -30°C ( The shear adhesive force of 2) was slightly large, the low angle adhesive force after UV irradiation was also slightly large, and the pick-up property was slightly inferior.

In addition, for the dicing die-bonding film 20 of Examples 15 and 19, the equivalent ratio of the isocyanate group (NCO) of the polyisocyanate-based crosslinking agent in the pressure-sensitive adhesive composition and the hydroxyl group (OH) of the acrylic pressure-sensitive adhesive polymer ( Since NCO/OH) is the upper limit of the range at 0.20, the pressure-sensitive adhesive layer 2 becomes slightly hard, and the shear adhesive force of the pressure-sensitive adhesive layer 2 before UV irradiation to the die-bonding film at -30°C is slightly small, and the die The float of the bond film 3 was seen slightly. Under the influence, about the dicing die-bonding film 20 of Example 15, the pick-up property was slightly inferior. Furthermore, about the dicing die-bonding film 20 of Example 19, although the float of the die-bonding film 3 was seen slightly, the active energy ray reactive carbon-carbon double bond concentration of an adhesive composition was 1.51 mmol/g Because it is large, the pickup performance barely secured A level (the number of successful pickups: 48). Further, about the dicing die-bonding film 20 of Example 24, the residual hydroxyl group concentration after the crosslinking reaction in the pressure-sensitive adhesive composition is 0.18 mmol/g, and since it is the lower limit of the range, die in -30°C The shear adhesive force of the adhesive layer 2 before UV irradiation to the bond film 3 was slightly small, and the float of the die-bonding film 3 was seen slightly, and the pick-up property was slightly inferior by the influence. Further, for the dicing die-bonding film 20 of Example 25, since the weight average molecular weight Mw of the acrylic pressure-sensitive adhesive polymer is slightly large, the pressure-sensitive adhesive layer (2) before UV irradiation for the die-bonding film at -30°C. ), the shear adhesive force was slightly small, and the die-bonding film 3 floated slightly, and the pick-up property was slightly inferior by the influence. Further, with respect to the dicing die-bonding film 20 of Example 27, since the glass transition temperature of the base polymer of the acrylic adhesive polymer in the pressure-sensitive adhesive composition is slightly higher, the die-bonding film at -30°C The shear adhesive force of the adhesive layer 2 before UV irradiation was slightly small, the float of the die-bonding film 3 was seen slightly, and the pick-up property was slightly inferior by the influence. Furthermore, about the dicing die-bonding film 20 of Example 28, since the thickness of the adhesive layer 2 is slightly thin, the adhesive layer before UV irradiation with respect to the die-bonding film 3 in -30 degreeC. The shear adhesive force of (2) was slightly small, the float of the die-bonding film 3 was seen slightly, and the pick-up property was slightly inferior by the influence. Furthermore, about the dicing die-bonding film 20 of Example 29, since the thickness of the adhesive layer 2 is slightly thick, the extensibility of the dicing tape 10 is slightly inferior, and the low angle adhesive force after UV irradiation. The angle was also slightly large, and the pickup performance was slightly inferior due to the influence.

On the other hand, as shown in Table 7, the adhesive layer containing the base film 1(o) which does not satisfy the requirements of this invention, and the adhesive compositions 2(o) - 2(t) which do not satisfy the requirements of this invention All of the dicing die-bonding films 20 (DDF(gg) to DDF(ll)) of Comparative Examples 1 to 6 produced using the dicing tape 10 provided with (2) had insufficient heat resistance. , any evaluation of the stealth dicing property 4 items, and the pick-up property evaluation WHEREIN: It was confirmed that it is a result inferior to the dicing die-bonding film 20 (DDF(a)-DDF(ff)) of Examples 1-32. . Similarly, as shown in Table 9, the adhesive layer containing the base film 1(r), 1(s) which does not satisfy the requirements of this invention, and the adhesive composition 2(o) which does not satisfy the requirements of this invention ( 2) The dicing die bond films 20 (DDF (vv), DDF (ww)) of Comparative Examples 16 and 17 produced using the dicing tape 10 provided with It was confirmed that it is a result inferior to the dicing die-bonding film 20 (DDF(a) - DDF(ff)) of Examples 1-32 in any evaluation of 4 items of dicing property, and evaluation of pick-up property.

Moreover, as shown in Table 8, although the base film 1(b) which satisfies the requirements of this invention is used, the adhesive layer containing the adhesive composition 2(o)-(t) which does not satisfy the requirements of this invention For the dicing die bond films 20 (DDF (mm) to DDF (rr)) of Comparative Examples 7 to 12 produced using the dicing tape 10 having (2), heat resistance, semiconductor wafer ( 30), the cutting property of the die-bonding film 3, and the extensibility of the dicing tape 10 were favorable, but in any evaluation of the stealth dicing property 4 items, and evaluation of pick-up property, Examples 1-32 It was confirmed that the result was inferior to that of the dicing die-bonding film 20 (DDF(a) to DDF(ff)).

Moreover, as shown in Table 9, although the adhesive layer 2 containing the adhesive composition 2(a) which satisfies the requirements of this invention is used, Base film 1(o)- which does not satisfy the requirements of this invention About the dicing die-bonding films 20 (DDF(ss)-DDF(uu)) of Comparative Examples 13-15 produced using the dicing tape 10 provided with the pressure-sensitive adhesive layer containing (q), In the evaluation of heat resistance and the evaluation of any of the four items of stealth dicing property, and the evaluation of pick-up properties, the results are inferior to the dicing die-bonding films 20 (DDF(a) to DDF(ff)) of Examples 1-32 it was confirmed

Specifically, Comparative Examples 1 to 6 and Comparative Examples using the base film 1(o) composed only of the resin (A) comprising the ionomer of the ethylene/unsaturated carboxylic acid copolymer without the polyamide resin (B). Regarding the dicing die-bonding film 20 of No. 13, all of them have insufficient heat resistance, and the stress at 5% elongation in the TD direction at -15°C of the base film 1 is as small as 12.5 MPa, within the range Since it was less than the lower limit of 15.5 MPa, the severability of the die-bonding film 3 and the extensibility of the dicing tape 10 were significantly inferior, and it turned out that the influence which affects the deterioration of pick-up property is large. In addition, about the dicing die-bonding film 20 of Comparative Example 1 and Comparative Example 4, the equivalent ratio (NCO/OH) in the pressure-sensitive adhesive composition is 0.47 and 0.33, respectively, and exceeds 0.20, which is the upper limit of the range, The adhesive layer 2 becomes hard, the shear adhesive force of the adhesive layer 2 before UV irradiation with respect to the die-bonding film 3 in -30 degreeC is small, and the float of the die-bonding film 3 is seen, and the influence The pickup performance was significantly inferior. On the other hand, with respect to the dicing die-bonding film 20 of Comparative Example 3, the equivalent ratio (NCO/OH) in the pressure-sensitive adhesive composition is 0.01 and less than 0.02, which is the lower limit of the range, the cohesive force of the pressure-sensitive adhesive layer 2 is It became small, the low-angle adhesive force after UV irradiation was large, and it was inferior to pick-up property remarkably. Further, about the dicing die-bonding film 20 of Comparative Example 2, the residual hydroxyl group concentration after the crosslinking reaction in the pressure-sensitive adhesive composition exceeds the upper limit of the range at 1.21 mmol/g. Since the active energy ray-reactive carbon-carbon double bond concentration was less than the lower limit of the range at 0.80 mmol/g, the low-angle adhesive force after UV irradiation was large, and the pickup properties were significantly inferior. Further, about the dicing die-bonding film 20 of Comparative Example 5, the residual hydroxyl group concentration after the crosslinking reaction in the pressure-sensitive adhesive composition exceeds the upper limit of the range at 0.95 mmol/g, so the active energy of the pressure-sensitive adhesive composition Since the line-reactive carbon-carbon double bond concentration is 0.58 mmol/g, which is significantly less than the lower limit of the range, the large influence of the acid value of the acrylic adhesive polymer of the pressure-sensitive adhesive composition is also added, and the low-angle adhesive force after UV irradiation increases, pickup The castle was far behind. For the dicing die-bonding film 20 of Comparative Example 6, since the glass transition temperature of the main chain of the acrylic adhesive polymer in the pressure-sensitive adhesive composition exceeds the upper limit of the range at 40 ° C., the pressure-sensitive adhesive layer 2 becomes hard, The shear adhesive force of the pressure-sensitive adhesive layer 2 before UV irradiation to the die-bonding film 3 at -30°C is small, and floating of the die-bonding film 3 is seen, and the pick-up property is significantly inferior under the influence there was.

Moreover, also about the dicing die-bonding film 20 of Comparative Examples 7-12 provided with the adhesive layer 2 containing the adhesive composition similar to Comparative Examples 1-6, respectively, the float of the die-bonding film 3 and pick-up The evaluation result of sex was equivalent to the above.

In addition, Comparative Example 13, which is outside the scope of the present invention, in which the base film (1) does not contain the polyamide resin (B) and consists only of the resin (A) comprising the ionomer of an ethylene-unsaturated carboxylic acid-based copolymer, and the base material The mass ratio (A):(B) of the ionomer resin (A) to the polyamide resin (B) in the entire film (1) is 97:3, and the content ratio of the polyamide resin (B) is small, For the dicing die-bonding film 20 of Comparative Example 14 outside the scope of the present invention, the heat resistance was insufficient, and the stress at the time of 5% elongation in the TD direction at -15°C of the base film 1 was, Since they are small at 12.5 MPa and 15.0 MPa and do not satisfy the lower limit of the range of 15.5 MPa, the severability of the die-bonding film 3 and the extensibility of the dicing tape 10 become insufficient, and as a result, the pick-up property is significantly was lagging behind Furthermore, the mass ratio (A):(B) of the resin (A) which consists of an ionomer and the polyamide resin (B) in the whole base film 1 is 70:30, and the polyamide resin (B) For the dicing die-bonding film 20 of Comparative Example 15 with a large content ratio and outside the scope of the present invention, heat resistance was good, but under the influence of the rigidity of the base film 1, the low-angle adhesive force after UV irradiation increased, Pickup performance was significantly inferior.

In addition, with respect to the dicing die-bonding film 20 (DDF(vv)) of Comparative Example 16 exemplified as a conventional dicing die-bonding film, the base film 1 having a three-layer structure of PP/EVA/PP - The stress at 5% elongation at 15° C. is very small at 10.8 MPa in the MD direction and 10.3 MPa in the TD direction, and does not satisfy the lower limit of the range of 15.5 MPa, so the die-bonding film 3 is cut Since the properties and extensibility of the dicing tape 10 become insufficient, and the equivalence ratio (NCO/OH) in the pressure-sensitive adhesive composition exceeds 0.20, which is the upper limit of the range at 0.47, the pressure-sensitive adhesive layer 2 is hard The shear adhesive force of the pressure-sensitive adhesive layer 2 before UV irradiation to the die-bonding film 3 at -30°C is small, and the die-bonding film 3 floats, and the pick-up property is significantly improved by their influence. was falling behind In addition, with respect to the dicing die-bonding film 20 (DDF (ww)) of Comparative Example 16 exemplified as a conventional dicing die-bonding film, at -15 ° C. of the base film 1 of the PVC single-layer structure. The stress at 5% elongation of is very large at 45.6 MPa in the MD direction and 42.8 MPa in the TD direction, exceeding the upper limit of the range of 28.5 MPa, so that the scalability of the dicing tape 10 becomes insufficient. , Furthermore, since the equivalent ratio (NCO/OH) in the pressure-sensitive adhesive composition exceeds 0.20, which is the upper limit of the range at 0.47, the pressure-sensitive adhesive layer 2 becomes hard and the die-bonding film 3 at -30°C The shear adhesive force of the pressure-sensitive adhesive layer 2 before UV irradiation was small, and floating of the die-bonding film 3 was observed, and the pick-up property was significantly inferior under their influence.

One… base film,
2… adhesive layer,
3, 3a1, 3a2... die bond film (adhesive layer, adhesive film);
4… a support substrate for mounting a semiconductor chip;
5… external connection terminals,
6… Terminals,
7… wire,
8… sealant,
9… support member,
10… dicing tape,
11… One-sided adhesive tape based on OPP film (backing tape);
12… Paper double-sided adhesive tape (fixing tape),
13… flatbed cross stage,
14… PET film-based single-sided adhesive tape (backing tape, fixing tape);
15… SUS version,
20… dicing die bond film,
W, 30… semiconductor wafer,
30a, 30a1, 30a2... semiconductor chip,
30b… reforming area,
31… semiconductor wafer core
32… semiconductor wafer left
33… semiconductor wafer right side
34… semiconductor wafer top
35… semiconductor wafer bottom
40… ring frame (wafer ring),
41… look,
50… adsorption collet,
60… Push-up pin (needle)
70, 80… semiconductor device

Claims (9)

A dicing tape provided with a base film and an adhesive layer containing an active energy ray-curable adhesive composition on the base film,
(1) The base film contains a resin (A) composed of an ionomer of an ethylene-unsaturated carboxylic acid-based copolymer, and a polyamide resin (B),
The mass ratio (A):(B) of the said resin (A) and the said resin (B) in the whole said base film is comprised with the resin composition which is the range of 72:28-95:5,
When the stress at the time of 5% elongation in -15 degreeC elongates a base film in either direction of MD direction (flow direction at the time of film forming of a base film) and TD direction (direction perpendicular to MD direction) Also in the range of 15.5 MPa or more and 28.5 MPa or less,
(2) the active energy ray-curable pressure-sensitive adhesive composition includes an acrylic pressure-sensitive adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, a photopolymerization initiator, and a polyisocyanate-based cross-linking agent that cross-reacts with the hydroxyl group,
The acrylic adhesive polymer, the glass transition temperature (Tg) of the main chain is in the range of -65°C or more and -50°C or less, and the hydroxyl value is in the range of 12.0 mgKOH/g or more and 55.0 mgKOH/g or less,
In the active energy ray-curable pressure-sensitive adhesive composition,
The equivalent ratio (NCO/OH) of the isocyanate group (NCO) of the polyisocyanate-based crosslinking agent to the hydroxyl group (OH) of the acrylic adhesive polymer is in the range of 0.02 or more and 0.20 or less,
The residual hydroxyl group concentration after the crosslinking reaction is in the range of 0.18 mmol or more and 0.90 mmol or less per 1 g of the active energy ray-curable pressure-sensitive adhesive composition;
Active energy ray-reactive carbon-carbon double bond concentration is the range of 0.85 mmol or more and 1.60 mmol or less per 1 g of active energy ray-curable adhesive composition, The dicing tape characterized by the above-mentioned. The method of claim 1,
The dicing tape, wherein the active energy ray-reactive carbon-carbon double bond concentration is in the range of 1.02 mmol or more and 1.51 mmol or less per 1 g of the active energy ray-curable pressure-sensitive adhesive composition. 3. The method according to claim 1 or 2,
A dicing tape having a weight average molecular weight Mw of 200,000 or more and 600,000 or less of the acrylic adhesive polymer. 3. The method of claim 1 or 2,
The acid value of the said acrylic adhesive polymer is a dicing tape in the range of 0 mgKOH/g or more and 9.0 mgKOH/g or less. The dicing die-bonding film in which the die-bonding film was provided so that peeling was possible on the adhesive layer of the dicing tape of Claim 1. 6. The method of claim 5,
The low-angle adhesive force after ultraviolet irradiation at 23° C. of the pressure-sensitive adhesive layer of the dicing tape to the die-bonding film (peel angle 30°, peel rate 600 mm/min) is 0.95 N/25 mm or less, and the die bond The dicing die-bonding film whose shear adhesive force (tensile rate 1,000 mm/min) before ultraviolet irradiation in -30 degreeC of the adhesive layer of the said dicing tape with respect to a film is 100.0 N/100 mm< ² > or more. 6. The method of claim 5,
The said die-bonding film is a dicing die-bonding film containing as a resin component the (meth)acrylic acid ester copolymer containing a glycidyl group, an epoxy resin, and a phenol resin. 8. The method according to any one of claims 5 to 7,
The die-bonding film is a dicing die-bonding film that is a wire-embedded die-bonding film. 9. The method of claim 8,
When the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer as a resin component, the epoxy resin, and the phenol resin is 100 parts by mass based on the wire-embedded die-bonding film, (a) the glycidyl group Containing (meth)acrylic acid ester copolymer in the range of 17 parts by mass or more and 51 parts by mass or less, the epoxy resin in the range of 30 parts by mass or more and 64 parts by mass or less, and the phenol resin in 19 parts by mass or more and 53 parts by mass or less. , the total amount of the resin component is adjusted to be 100 parts by mass, and (b) the curing accelerator is included in the range of 0.01 parts by mass or more and 0.07 parts by mass or less with respect to 100 parts by mass of the total amount of the epoxy resin and the phenol resin, ( c) A dicing die bond containing an inorganic filler in an amount of 10 parts by mass or more and 80 parts by mass or less with respect to 100 parts by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin. film.

Images