KR20230133068A - Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus capable of processing large-area substrates.
The present invention includes a process chamber (100) forming a processing space (S) in which a substrate (1) is processed; a substrate support portion 200 installed in the processing space S to support the substrate 1; a gas supply unit 300 installed on one side of the process chamber 100 to extend in the other direction and spraying process gas supplied from the outside toward the substrate 1; Disclosed is a substrate processing apparatus including a gas exhaust unit 400 that extends from the gas supply unit 300 and is installed on the other side of the process chamber 100, and sucks in the process gas and discharges it to the outside.

Description

Substrate processing apparatus}

The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus capable of processing large-area substrates.

Inside the processing space where substrates are processed in the substrate processing equipment, a large amount of gas may be supplied and discharged for purposes such as forming a thin film on the substrate, forming a pattern on the thin film on the substrate, or ventilating the atmosphere inside the processing space. there is.

In particular, as a substrate processing device for performing heat treatment on large-area substrates, it is essential to supply purge gas to exhaust particles generated during the process inside the processing space.

In order to smoothly ventilate the atmosphere and form airflow inside the processing space, the conventional substrate processing device supplies gas through a supply nozzle on one side of the processing space and exhausts the gas through an exhaust port on the other side in a horizontal direction. An air current was formed.

However, conventional substrate processing devices have a problem in that a downward airflow inevitably occurs with respect to the supplied gas, preventing a horizontal airflow from the supply nozzle to the exhaust port from being formed smoothly.

In particular, when gas supplied at room temperature is supplied into a processing space at a relatively high temperature, a strong downward airflow occurs due to the low temperature, and the formation of vortices inside the processing space due to this downward airflow prevents a smooth horizontal airflow from being formed. There is a problem that this cannot be done, and because of this, there is a problem that particles remain inside the processing space and on the substrate.

In addition, since gas is supplied from one side of the substrate, it is impossible to control the gas injection amount based on the plane of the substrate, resulting in low uniformity in substrate processing.

In addition, since exhaust is performed through an exhaust port disposed on the other side of the processing space opposite to the supply nozzle, there is a problem of low exhaust efficiency as exhaust is performed within a limited area of a single hole.

The present invention was created to solve the above problems, and its object is to provide a substrate processing device that supplies and exhausts gas to enable uniform processing of substrates.

The present invention was created to achieve the object of the present invention as described above, and the present invention includes a process chamber (100) forming a processing space (S) in which a substrate (1) is processed; a substrate support portion 200 installed in the processing space S to support the substrate 1; a gas supply unit 300 installed on one side of the process chamber 100 to extend in the other direction and spraying process gas supplied from the outside toward the substrate 1; Substrate processing including a gas exhaust unit 400 installed on the other side of the process chamber 100 to face the gas supply unit 300, connected to the gas supply unit 300, and sucking in the process gas and discharging it to the outside. Start the device.

The gas supply unit 300 may be disposed on the upper side of the substrate 1.

The gas supply unit 300 includes a gas supply pipe 310 installed through one side wall of the process chamber 100 to receive the process gas from the outside, the gas supply pipe 310, and the gas exhaust unit ( 400) may include at least one gas injection unit 320 that is provided between the gas injection units 320 and sprays the process gas toward the substrate 1.

The gas injection unit 320 is connected to a gas injection pipe 321 installed to communicate with the gas supply pipe 310 and to the gas injection pipe 321 to spray the process gas toward the substrate 1. It may include a plurality of gas injection holes 322 formed.

The gas injection hole 322 may be formed on the lower side of the outer peripheral surface of the gas injection pipe 321.

The gas injection hole 322 may be formed on a virtual vertical line L with respect to the upper surface of the substrate 1 on the lower outer peripheral surface of the gas injection pipe 321.

The gas injection hole 322 may have an inner peripheral surface formed perpendicular to the upper surface of the substrate 1.

The gas injection hole 322 may be formed such that its inner peripheral surface is inclined with respect to the upper surface of the substrate 1.

The gas injection hole 322 may have an inner circumferential surface inclined so that the process gas is injected traveling forward in the direction of movement of the process gas.

The inner diameters of the gas injection holes 322 may gradually or gradually become smaller as they move from one side of the process chamber 100 to the other side.

The number of gas injection holes 322 per unit area may gradually or gradually decrease from one side of the process chamber 100 to the other side.

The gas supply unit 300 further includes a first connection member 330 that connects the gas supply pipe 310, the gas injection unit 320, and the plurality of gas injection units 320 to communicate with each other. It can be included.

The first connecting member 330 is provided with a keyway or a first connecting member pinhole 332 to be coupled to the gas spraying portion 320 in a correct position in order to align the process gas spraying direction through the gas spraying portion 320. ) can be formed.

The gas exhaust unit 400 includes a gas exhaust pipe 410 installed through the other side wall of the process chamber 100 to exhaust the processing space S, and the gas exhaust pipe 410 for discharging the process gas. It may include a plurality of gas exhaust holes 420 formed on the outer peripheral surface of the gas exhaust pipe 410 to allow suction.

The gas exhaust unit 400 is a device that connects the gas exhaust pipe 410 and the gas supply unit 300 by having one end coupled to the gas exhaust pipe 410 and the other end coupled to the gas supply unit 300. 2 A connection member 430 may be additionally included.

The gas exhaust unit 400 may be connected to the gas supply unit 300 while being blocked from each other.

The substrate support part 200, the gas supply part 300, and the gas exhaust part 400 are provided in plural numbers corresponding to the plurality of substrates 1 so that the plurality of substrates 1 are spaced apart from each other in the vertical direction, The process gas airflow for the substrate 1 disposed on the upper side may be stronger than the process gas airflow for the substrate 1 disposed on the lower side.

The number or size per unit area of the gas injection holes 322 for spraying the process gas of the gas supply unit 300 disposed on the upper side is greater than that of the gas injection holes 322 of the gas supply portion 300 disposed on the lower side. ) may be larger than the number or size per unit area.

The number or size per unit area of the gas gas exhaust holes 420 for exhausting the process gas of the gas exhaust unit 400 disposed on the upper side is the gas of the gas exhaust portion 400 disposed on the lower side. It may be larger than the number or size per unit area of the exhaust holes 420.

The substrate processing apparatus according to the present invention is configured to spray gas directly from the top of the substrate toward the substrate, so it has the advantage of effectively removing particles on the substrate.

In addition, the substrate processing apparatus according to the present invention has the advantage of being able to control the gas injection amount at a specific location by considering the position of the substrate where the gas is sprayed and the airflow in the processing space.

In addition, the substrate processing apparatus according to the present invention has the advantage of being able to effectively arrange and support the gas supply and gas exhaust within a limited processing space by configuring the gas supply and gas exhaust to be integrated or connected to each other.

In particular, the substrate processing apparatus according to the present invention can spray gas evenly and uniformly on the upper surface of the substrate by adjusting the gas injection amount in consideration of the position of the gas being sprayed within the substrate, thereby ensuring uniformity in substrate temperature. There is an advantage.

In addition, the substrate processing apparatus according to the present invention has a structure that sucks exhaust gas through a plurality of gas exhaust holes, and has the advantage of increasing particle emission efficiency.

In particular, the substrate processing apparatus according to the present invention has the advantage of enabling smooth particle discharge by increasing exhaust efficiency and exhaust volume by increasing the exhaust area of multiple perforations compared to conventional exhaust ports in which a single gas exhaust port is formed. .

1 is a cross-sectional view schematically showing the interior of a substrate processing apparatus according to the present invention.
FIG. 2 is a side view showing a gas supply unit and a gas exhaust unit of the substrate processing apparatus according to FIG. 1.
FIG. 3 is an enlarged cross-sectional view of part A showing the first connection member of the gas supply unit in the substrate processing apparatus according to FIG. 2.
FIG. 4 is an enlarged cross-sectional view of portion B showing the second connection member of the gas supply unit and the gas exhaust unit of the substrate processing apparatus according to FIG. 2.
FIG. 5 is an enlarged view showing an embodiment of a gas injection hole in the substrate processing apparatus according to FIG. 1.
Figure 6 is a graph comparing the particle emission ratio of the substrate processing apparatus according to the prior art and the substrate processing apparatus according to Examples 1 to 4 of the present invention.

Hereinafter, the substrate processing apparatus according to the present invention will be described in detail with reference to the attached drawings.

A substrate processing apparatus according to the present invention includes a process chamber 100 forming a processing space S in which a substrate 1 is processed; a substrate support portion 200 installed in the processing space S to support the substrate 1; a gas supply unit 300 installed on one side of the process chamber 100 to extend in the other direction and spraying process gas supplied from the outside toward the substrate 1; It extends from the gas supply unit 300 and is installed on the other side of the process chamber 100, and includes a gas exhaust unit 400 that sucks in the process gas and discharges it to the outside.

Here, the process gas according to the present invention is a general term for gases used in the process for substrate processing.

For example, it may refer to a purge gas for discharging various fumes that may be generated during the process and organic substances produced through the fumes.

The substrate 1, which is the subject of processing according to the present invention, can be understood to include all substrates such as substrates used in display devices such as LED and LCD, semiconductor substrates, and solar cell substrates, and in particular, flexible display devices. It may refer to the flexible substrate used.

Meanwhile, the substrate processing process of the substrate processing apparatus according to the present invention can be understood to include a deposition process, an etching process, a heat treatment process, etc., and in particular, forming a flexible substrate on a non-flexible substrate, forming a pattern on a flexible substrate, It may include processes such as separating the flexible substrate, heat treating and drying the flexible substrate, etc.

The substrate 1 may be configured so that a process is performed simultaneously in a state in which a plurality of substrates 1 are stacked on a plurality of substrate supports 200 and spaced apart from each other in the vertical direction. As another example, a single Of course, it can also be a configuration in which the substrate 1 is introduced and substrate processing is performed.

The process chamber 100 forms a processing space S in which the substrate 1 is processed, and various configurations are possible.

For example, the process chamber 100 includes a substantially hexahedral chamber body that forms a sealed processing space (S) inside, and a reinforcing rib installed on the outer surface of the chamber body to reinforce the chamber body. can do.

The chamber body may be made of at least one of quartz, stainless steel, aluminum, graphite, silicon carbide, or aluminum oxide.

Meanwhile, the chamber main body is a hexahedron, and an entrance (not shown) through which the substrate 1 is brought in and out may be formed on the front, and opposing side walls are formed on the side adjacent to the entrance, and the opposite side of the entrance is formed. The back side may be formed.

In addition, the process chamber 100 may be equipped with a door (not shown) to open and close the entrance (not shown), and the door may be installed in a front-to-back, left-right, or up-and-down direction on the outside of the front where the entrance (not shown) is formed. It is installed in a sliding manner so that the entrance can be opened and closed.

In addition, the chamber main body has a plurality of through holes formed in the side wall, so that the gas supply pipe 310 of the gas supply unit 300 and the gas exhaust pipe 410 of the gas exhaust unit 400, which will be described later, pass through the processing space. (S) Can be installed internally.

At this time, a sealing means may be additionally provided around the through hole to prevent leakage of process gas for substrate processing and to form the processing space (S) into a sealed space.

The reinforcing rib may be installed on the outer surface of the chamber body to reinforce the chamber body.

For example, the reinforcing ribs are installed on the outer surface of the chamber body, more specifically, on the outer side of the upper and lower surfaces and side walls, to prepare for the possibility of damage or deformation due to strong internal pressure or high temperature during the process. This can improve durability.

The substrate support unit 200 may be installed in the processing space S to support the substrate 1.

For example, as shown in FIG. 1, a plurality of substrate supports 200 are arranged in a vertical direction in the processing space S to support a plurality of substrates 1 so that they are spaced apart from each other along the vertical direction. It can be.

In particular, the substrate support unit 200 is installed in the processing space S to support the substrates 1 at regular intervals in the vertical direction in order to support the plurality of substrates 1 to be spaced apart from each other along the vertical direction. It can be.

For example, the substrate support unit 200 includes support bars installed across opposing side walls at positions adjacent to the front and rear surfaces of the process chamber 100, respectively; It is installed and supported by the support bar in a direction transverse to the support bar, and may include a plurality of substrate mounting portions for supporting the substrate 1 at the top.

The support bar may be installed across opposing side walls at positions adjacent to the front and rear of the process chamber 100, respectively.

At this time, a plurality of support bars may be installed at positions adjacent to the front and rear of the process chamber 100, respectively, and spaced apart from each other at regular intervals in the vertical direction, thereby supporting both ends of the substrate mounting portion, respectively.

The gas supply unit 300 is installed on one side of the process chamber 100 to extend toward the other side, and may be configured to spray process gas supplied from the outside toward the substrate 1.

At this time, the gas supply unit 300 is disposed on the upper side of the substrate 1 and can spray the process gas onto the upper surface of the substrate 1 by spraying the process gas downward.

More specifically, the gas supply unit 300 can spray process gas directly toward the upper surface of the substrate 1 by disposing the gas injection unit 320 on the upper surface of the substrate 1.

For example, the gas supply unit 300 includes a gas supply pipe 310 installed through one side wall of the process chamber 100 to receive process gas from the outside, a gas supply pipe 310, and a gas exhaust unit. It may include at least one gas injection unit 320 provided between 400 and spraying process gas toward the substrate 1.

In addition, the gas supply unit 300 may further include a first connection member 330 connecting the gas supply pipe 310, the gas injection unit 320, and the plurality of gas injection units 320. there is.

The gas supply pipe 310 may be installed through one side wall of the process chamber 100 to receive process gas from the outside and deliver it to the gas injection unit 320.

At this time, the gas supply pipe 310 can be installed through the through hole formed in the above-described chamber body, and can be connected to the external gas supply source 10 to receive process gas.

Meanwhile, the gas supply pipe 310 may be a pipe in which a flow path through which process gas flows is formed, and may be additionally provided with a control valve and a pressure sensor to adjust the process gas flow rate as needed.

The gas injection unit 320 is provided between the gas supply pipe 310 and the gas exhaust unit 400 and sprays process gas toward the substrate 1. At least one gas injection unit 320 may be provided.

More preferably, the gas injection unit 320 is installed across from one side of the process chamber 100 to the other side. A plurality of gas injection units 320 may be provided and installed by combining them to communicate with each other.

At this time, the gas injection unit 320 can be coupled to communicate with the gas supply pipe 310, and a plurality of gas injection units 320 are sequentially coupled to communicate with each other and are connected to the gas exhaust unit 400 at the end. Can be combined.

Meanwhile, as described above, the gas supply unit 300 may be installed in an assembled manner, and as another example, the gas supply pipe 310 and the gas injection unit 320 may be provided in an integrated form so as to communicate with each other. am.

The gas injection unit 320 is a component that sprays the process gas received from the gas supply unit 300 toward the upper surface of the substrate 1, and for this purpose, it can be placed at a corresponding position on the upper side of the substrate 1.

For example, the gas injection unit 320 is connected to the gas injection pipe 321 installed to communicate with the gas supply pipe 310 and the gas injection pipe 321 to spray the process gas toward the substrate 1. It may include a plurality of gas injection holes 322 formed.

That is, the gas injection unit 320 is supplied with process gas through the gas injection pipe 321, which is coupled to communicate with the gas supply pipe 310 and the first connection member 330, which will be described later, and is located on the outer peripheral surface. A gas injection hole 322 is formed so that process gas can be sprayed toward the substrate 1.

Meanwhile, the gas injection pipe 321 is plural, connected to each other through the first connection member 330, and installed across the processing space S between the gas supply pipe 310 and the gas exhaust unit 400. It can be.

At this time, each of the plurality of gas injection pipes 321 may have the same cross-sectional area, or, as another example, may have different cross-sectional areas.

In this case, different cross-sectional areas can be determined considering the flow rate of the process gas sprayed at the edge and center of the substrate 1, and gradually or stepwise increases or decreases from the gas supply pipe 310 side to the gas exhaust portion 400 side. It may be smaller or gradually smaller and then larger as it passes through the center of the substrate (1).

The multi-faceted area of the gas injection pipe 321 described above refers to the cross-sectional area of the pipe, and more specifically, refers to the cross-sectional area of the gas injection pipe 321 cut in a plane perpendicular to the injection direction of the process gas. It may be a factor that determines the flow rate of the process gas that moves and the process gas that is injected.

As a result, when the gas injection pipe 321 has different cross-sectional areas, the flow rate of the moving process gas and the injected process gas may vary, so the user can optimally select the gas injection pipe 321 with an appropriate cross-sectional area according to need. It can be installed in any location.

The gas injection holes 322 may be provided in plural numbers on the outer peripheral surface of the gas injection pipe 321 and may be configured to spray process gas toward the substrate 1.

For example, the gas injection hole 322 may be formed on a virtual vertical line L with respect to the upper surface of the substrate 1 on the lower outer peripheral surface of the gas injection pipe 321.

More specifically, the gas injection hole 322 may be formed on the lower outer peripheral surface with respect to the horizontal plane passing through the center of the gas injection pipe 321, and is used to spray the process gas directly below the upper surface of the substrate 1. ) A plurality of gas injection pipes 321 may be formed along the longitudinal direction on an imaginary vertical line (L) with respect to the upper surface.

Additionally, as another example, the gas injection hole 322 may be formed on at least one side of the lower outer peripheral surface of the gas injection pipe 321 based on an imaginary vertical line L with respect to the upper surface of the substrate 1.

More specifically, the gas injection hole 322 may be formed on the lower outer peripheral surface with respect to the horizontal plane passing through the center of the gas injection pipe 321, and may be formed on the substrate (1) to inject process gas at an angle on the upper surface of the substrate (1). 1) They may be formed on at least one side of an imaginary vertical line (L) to the upper surface, and more preferably, they may be formed at positions symmetrical to each other based on an imaginary vertical line (L).

That is, the gas injection hole 322 is formed on the lower outer peripheral surface of the gas injection pipe 321, and is formed symmetrically with respect to at least one side of the left and right sides with respect to the lowermost portion of the lower outer peripheral surface, more preferably with respect to the lowermost portion. It can be.

Meanwhile, the inner peripheral surface of the gas injection hole 322 may be formed perpendicular to the upper surface of the substrate 1, and more specifically, the hole may be formed in a vertical radial direction on the outer peripheral surface of the gas injection pipe 321. there is.

In addition, as another example, the gas injection hole 322, as shown in FIG. 5, is formed so that its inner peripheral surface is inclined with respect to the upper surface of the substrate 1, so that the gas injection hole 322 is inclined with respect to the upper surface of the substrate 1 when the process gas is sprayed. Process gas injection can be induced to

At this time, the gas injection hole 322 may have an inner peripheral surface inclined toward the center of the substrate 1, and may be formed in combination with the vertical inner peripheral surface described above.

At this time, the inner circumferential surface of the gas injection hole 322 may be inclined so that the process gas is sprayed in a circular direction toward the substrate 1. More specifically, the gas injection pipe 321 may be inclined to inject the process gas toward the substrate 1. ) When located at the upper side, the gas injection hole 322 may be formed so that its inner peripheral surface is inclined downward toward the direction of movement of the process gas.

Meanwhile, as another example, at this time, it goes without saying that the inner peripheral surface of the gas injection hole 322 may be inclined so that the process gas is sprayed backward in the direction of movement of the process gas toward the substrate 1.

In addition, considering that the process gas is injected through horizontal movement from the gas supply pipe 310 to the gas injection unit 320, in order to induce uniform gas injection on the upper surface of the substrate 1, the gas injection hole 322 ) can be adjusted in size and number.

For example, the inner diameters of the gas injection holes 322 may gradually or gradually become smaller from one side of the process chamber 100 to the other side.

Additionally, as another example, the number of gas injection holes 322 per unit area may gradually or gradually decrease from one side of the process chamber 100 to the other side.

That is, as the distance between neighboring gas injection holes 322 increases from one side of the process chamber 100 to the other side, the number per unit area can be reduced.

Through this, when the process gas is supplied through the supply pipe 310, the majority of the process gas is prevented from being injected through the gas injection unit 320 located relatively on one side of the process chamber 100, and the process gas is prevented from being injected through the gas injection unit 320. It can be induced to sufficiently deliver to the gas injection unit 320 located on the other side of the process chamber 100.

The first connection member 330 is a component that connects the gas supply pipe 310, the gas injection unit 320, and the plurality of gas injection units 320, and can have various configurations.

For example, the first connection member 330 is connected at one end to the gas supply pipe 310 or the gas injection unit 320, and at the other end to the gas injection unit 320 to communicate therebetween. It may be a configuration that does.

At this time, the first connection member 330 corresponds to the first connection body 331 with a flow path formed therein and a screw thread formed at the end of the gas supply pipe 310 or the end of the gas injection unit 320. It may include a screw thread 333 formed on the inner peripheral surface of the connection body 331, and thus can be coupled to the gas supply pipe 310 and the gas injection unit 320 through screw coupling.

In addition, the first connecting member 330 may have a flow path formed therein so that the flow path through which the process gas flows communicates with the connected gas injection units 320 and the gas supply pipe 310.

Meanwhile, the first connecting member 330 has a keyway or a first connecting member pin hole 332 added so that the gas spraying unit 320 is coupled in the correct position to align the process gas spraying direction of the gas spraying unit 320. It can be formed as

That is, the first connection member 330 is connected to the gas supply hole 322 of the gas injection unit 320 in a state in which the first connection member pin hole 332 is formed at a preset position of the first connection body 331. The alignment holes 323 formed in the gas injection pipe 321 formed corresponding to the first connection member pin hole 332 can be aligned to couple them at the correct position considering the injection direction.

At this time, the first connection body 331 is a configuration in which a flow path is formed inside so that the process gas can move, and one end is coupled with the gas supply pipe 310 and the other end is coupled with the gas injection unit 320, thereby forming the first connection body 331. It may be a configuration that connects them.

In addition, an alignment pin (not shown) may be fastened through the first connection member pin hole 332 and the alignment hole 323. Unlike the above, the alignment pin (not shown) may be fastened to the first connection member pin hole 332 and the alignment hole 323. Of course, alignment and coupling between the gas injection unit 320 and the first connection member 330 can be performed through bolt fastening.

The gas exhaust unit 400 extends from the gas supply unit 300 and is installed on the other side of the process chamber 100, and may be configured to suck in process gas and discharge it to the outside.

For example, the gas exhaust unit 400 includes a gas exhaust pipe 410 installed through the other side wall of the process chamber 100 to exhaust the processing space S, and a gas exhaust pipe 410 for discharging the process gas. It may include a plurality of gas exhaust holes 420 formed on the outer peripheral surface of the gas exhaust pipe 410 to allow suction.

In addition, the gas exhaust unit 400 has one end coupled to the gas exhaust pipe 410 and the other end coupled to the gas supply unit 300, thereby forming a second connection that connects the gas exhaust pipe 410 and the gas supply unit 300. A member 430 may be additionally included.

The gas exhaust pipe 410 may be installed through the other side wall of the process chamber 100 to exhaust the processing space (S).

That is, the gas exhaust pipe 410 is installed to correspond to the gas supply pipe 310 and penetrate the other side wall of the process chamber 100 to be connected to the external pump 20, and is installed to connect to the external pump 20 through pumping. The exhausted process gas can be sucked in and discharged.

At this time, the gas exhaust pipe 410 may be installed on the other side wall through the through hole of the above-described chamber body, and at least a portion may be connected to the gas injection unit 320 in the processing space (S).

In this case, the gas exhaust pipe 410 may be connected to the gas injection unit 320 through a second connection member 430, which will be described later, and may be connected to the gas injection unit 320 while being blocked from each other.

More specifically, the gas exhaust pipe 410 is formed to communicate with the exhaust pipe 411, which has a flow path formed inside and a gas exhaust hole 420 on the outer peripheral surface, and the end of the exhaust pipe 411, which will be described later. It may include an exhaust coupling portion 412 for coupling with the second connection member 430.

At this time, the exhaust coupling portion 412 extends with a step from the exhaust pipe 411, and has threads corresponding to threads 433, which will be described later, formed on its inner peripheral surface, so that it can be coupled through screw coupling.

The gas exhaust hole 420 is formed on the outer peripheral surface to suck in process gas exhausted through the gas exhaust pipe 410, and various configurations are possible.

For example, a plurality of the gas exhaust holes 420 are formed on the outer circumferential surface of the gas exhaust pipe 410 on the processing space (S) side, and can absorb the exhausted process gas. The gas exhaust holes 420 are not limited to a specific location on the outer circumferential surface and can be located at various locations. Multiple locations may be formed.

On the other hand, by forming a plurality of gas exhaust holes 420, the area to be exhausted is increased compared to the point where the gas is exhausted through a conventional exhaust port, and there is an advantage in that suction occurs at various locations, thereby improving exhaust efficiency.

The second connecting member 430 has one end coupled to the gas exhaust pipe 410 and the other end coupled to the gas supply unit 300 to connect the gas exhaust pipe 410 and the gas supply unit 300. It may be a configuration.

For example, the second connection member 430 has one end coupled to the gas exhaust pipe 410 and the other end coupled to the gas supply unit 300, and a second connection body 431 that blocks the space between them, The second connection body 431 can be screwed to the gas exhaust pipe 410 through a thread 433 formed on the outer peripheral surface of the gas exhaust pipe 410.

Meanwhile, the second connecting member 430 has a second connecting member pinhole 432 formed like the above-described first connecting member pinhole 332, and an alignment hole 323 formed in the gas injection unit 320 In response, the gas injection unit 320 can be aligned and combined.

At this time, it goes without saying that the second connection member 430 can also be coupled to the gas injection unit 320 in the correct position through a keyway, fastening pin, or bolt.

On the other hand, the substrate processing apparatus according to the present invention is configured to perform a process by arranging a plurality of substrates (1) vertically spaced apart from each other, and for this purpose, a substrate support unit 200, a gas supply unit 300, and a gas exhaust unit ( 400) may be provided in plural numbers corresponding to the substrates 1.

In this case, the process gas airflow for the substrate 1 disposed on the upper side may be formed stronger than the process gas airflow for the substrate 1 disposed on the lower side.

That is, the process gas supplied to the substrate 1 disposed on the upper side may have a relatively smaller flow rate of the process gas injected than the substrate 1 disposed on the lower side due to the formation of a natural downward airflow. The process gas stream to (1) needs to be formed stronger than the process gas stream to the substrate (1) disposed below.

For this purpose, the number or size per unit area of the gas injection holes 322 for spraying the process gas of the gas supply unit 300 disposed on the upper side is determined by the gas injection hole 322 of the gas supply portion 300 disposed on the lower side. The number or size per unit area of the holes 322 may be larger.

More specifically, the gas injection holes 322 for spraying the process gas of the gas supply unit 300 disposed on the upper side may be provided in multiple numbers per unit area or may have a larger inner diameter.

In addition, for the difference in airflow between the upper and lower parts, the number or size per unit area of the gas exhaust holes 420 for exhausting the process gas of the gas exhaust unit 400 arranged on the upper side is different from that of the gas exhaust hole 420 arranged on the lower side. It may be formed to be larger than the number or size per unit area of the gas exhaust holes 420 of the base 400.

That is, the gas exhaust holes 420 for exhausting the process gas of the gas exhaust unit 400 disposed on the upper side may be formed in a larger number per unit area or larger in size to induce strong exhaustion. there is.

Hereinafter, the particle emission effect will be described with reference to FIG. 6 for various embodiments according to the present invention.

The configuration of the embodiments for explaining the particle emission effect will be described below, and the above-described content may be equally applied to the configuration omitted below.

In the substrate processing device according to Example 1, the diameter of the gas injection pipe 321 is 12 mm, the diameter of the plurality of gas injection holes 322 formed in the gas injection pipe 321 is 3 mm or 2 mm, and the gas exhaust pipe 410 ) has a diameter of 24 mm, and the gas exhaust hole 420 formed in the gas exhaust pipe 410 has a diameter of 6 mm.

At this time, the substrate processing device according to Example 1 is formed with 25 gas injection holes 322 arranged in the longitudinal direction, and includes a gas injection hole 322 with a diameter of 3 mm and a gas injection hole with a diameter of 2 mm ( 322) are mixed.

The substrate processing apparatus according to Example 2 may be formed in the same state as the substrate processing apparatus according to Example 1, with 12 gas injection holes 322 arranged in the longitudinal direction.

The substrate processing apparatus according to Example 3 provides different process gas supply flow rates between the gas supply pipe 310 provided at the top and the remaining gas supply pipes 310 in the configuration of Example 1, and is described in more detail. In other words, a flow rate greater than the process gas flow rate supplied to each of the remaining gas supply pipes 310 can be supplied to the uppermost gas supply pipe 310.

For example, Example 3 can supply a flow rate that is 5 times greater than the process gas supplied to the uppermost gas supply pipe 310 of Example 1.

Finally, the substrate processing apparatus according to Example 4 was configured by changing the diameter of the uppermost gas injection pipe 321 to 16 mm from the configuration of Example 1.

Accordingly, as a result of analyzing the particle emission ratio at the outlet, which is the ratio of the amount of particles discharged to the outlet among the total particles generated in the prior art and each of Examples 1 to 4, the prior art was about 5%, and Example 1 was about 5%. It was confirmed that the particle emission rate in all examples was significantly superior to that of the prior art, at about 28%, Example 2 was about 34%, Example 3 was about 30%, and Example 4 was about 27%.

On the other hand, in the substrate processing apparatus according to the prior art, when gas supplied at room temperature is supplied into a processing space at a relatively high temperature, a strong downward air current is generated due to the low temperature, and a vortex is formed inside the processing space due to this downward air flow. As a result, a smooth horizontal airflow cannot be formed, and as a result, there is a problem in which particles are not discharged smoothly to the uppermost substrate.

Accordingly, in a substrate processing device in which 10 gas exhaust pipes 410 are installed in the vertical direction, looking at the top particle discharge ratio, which means the ratio of the amount of particles discharged to the top gas exhaust unit 400 among the total amount of particles discharged, , while the conventional art was about 6%, Example 1 was confirmed to increase by 1.2 times to 7.3%.

Accordingly, it was confirmed that the top particle emission rate increases, which has the effect of improving particle emission to the topmost substrate.

Since the above is only a description of some of the preferred embodiments that can be implemented by the present invention, as is well known, the scope of the present invention should not be construed as limited to the above embodiments, and the technical aspects of the present invention described above should not be construed. It will be said that all ideas and technical ideas that share their roots are included in the scope of the present invention.

1: Substrate 100: Process chamber
200: substrate support part 300: gas supply part
400: gas exhaust unit

Claims (19)

a process chamber 100 forming a processing space (S) in which the substrate 1 is processed;
a substrate support portion 200 installed in the processing space S to support the substrate 1;
a gas supply unit 300 installed on one side of the process chamber 100 to extend in the other direction and spraying process gas supplied from the outside toward the substrate 1;
It is installed on the other side of the process chamber 100 to face the gas supply unit 300, is connected to the gas supply unit 300, and includes a gas exhaust unit 400 that sucks in the process gas and discharges it to the outside. A substrate processing device. In claim 1,
The gas supply unit 300,
A substrate processing device, characterized in that it is disposed on the upper side of the substrate (1). In claim 1,
The gas supply unit 300,
A gas supply pipe 310 is installed through one side wall of the process chamber 100 to receive the process gas from the outside, and is provided between the gas supply pipe 310 and the gas exhaust unit 400 to discharge the substrate. A substrate processing apparatus comprising at least one gas injection unit 320 that sprays the process gas toward (1). In claim 3,
The gas injection unit 320,
A gas injection pipe 321 installed to communicate with the gas supply pipe 310, and a plurality of gas injection holes 322 formed in the gas injection pipe 321 to spray the process gas toward the substrate 1. ) A substrate processing device comprising: In claim 4,
The gas injection hole 322 is,
A substrate processing device, characterized in that it is formed on the lower side of the outer peripheral surface of the gas injection pipe 321. In claim 4,
The gas injection hole 322 is,
A substrate processing device, characterized in that it is formed on a virtual vertical line (L) with respect to the upper surface of the substrate (1) on the lower outer peripheral surface of the gas injection pipe (321). In claim 4,
The gas injection hole 322 is,
A substrate processing device, characterized in that the inner peripheral surface is formed perpendicular to the upper surface of the substrate (1). In claim 4,
The gas injection hole 322 is,
A substrate processing device, characterized in that the inner peripheral surface is formed to be inclined with respect to the upper surface of the substrate (1). In claim 4,
The gas injection hole 322 is,
A substrate processing device characterized in that the inner peripheral surface is inclined so that the process gas travels toward the direction of movement of the process gas and is injected. In claim 4,
The gas injection holes 322 are,
A substrate processing device, wherein the inner diameter gradually or gradually becomes smaller from one side of the process chamber 100 to the other side. In claim 4,
The gas injection hole 322 is,
A substrate processing apparatus, characterized in that the number per unit area gradually or gradually decreases from one side of the process chamber 100 to the other side. In claim 3,
The gas supply unit 300,
Substrate processing, characterized in that it further comprises a first connection member 330 connecting the gas supply pipe 310 and the gas injection unit 320 and the plurality of gas injection units 320 to communicate with each other. Device. In claim 12,
The first connection member 330 is,
In order to align the process gas injection direction through the gas injection unit 320, a key groove or a first connecting member pin hole 332 is formed to engage the gas injection unit 320 in the correct position. Device. In claim 1,
The gas exhaust unit 400,
A gas exhaust pipe 410 installed through the other side wall of the process chamber 100 to exhaust the processing space S, and a gas exhaust pipe 410 to suck the process gas into the gas exhaust pipe 410. ) A substrate processing device comprising a plurality of gas exhaust holes 420 formed on the outer peripheral surface. In claim 14,
The gas exhaust unit 400,
A second connection member 430 is additionally connected to the gas exhaust pipe 410 and the gas supply unit 300 by having one end coupled to the gas exhaust pipe 410 and the other end coupled to the gas supply unit 300. A substrate processing device comprising: In claim 14,
The gas exhaust unit 400,
A substrate processing device characterized in that it is connected to the gas supply unit 300 in an isolated manner. In claim 1,
The substrate support part 200, the gas supply part 300, and the gas exhaust part 400,
A plurality of substrates 1 are provided in plural numbers to correspond to the substrates 1 so that they are spaced apart from each other in the vertical direction,
A substrate processing apparatus, wherein the process gas airflow for the substrate (1) disposed on the upper side is stronger than the process gas airflow for the substrate (1) disposed on the lower side. In claim 17,
The number or size per unit area of the gas injection holes 322 for spraying the process gas of the gas supply unit 300 disposed on the upper side is greater than that of the gas injection holes 322 of the gas supply portion 300 disposed on the lower side. ) A substrate processing device characterized in that it is larger than the number or size per unit area. In claim 17,
The number or size per unit area of the gas gas exhaust holes 420 for exhausting the process gas of the gas exhaust unit 400 disposed on the upper side is the gas of the gas exhaust portion 400 disposed on the lower side. A substrate processing device characterized in that the number or size per unit area of the exhaust holes 420 is larger.

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