KR20230101679A - Gas supplying unit and apparatus for treating substrate with the unit - Google Patents

Abstract

The present invention provides a device for processing a substrate. The device for processing a substrate according to an embodiment comprises: a housing having an open upper surface and a processing space inside; a cover sealing the open upper surface of the housing; a support unit supporting a substrate within the processing space; a gas supply unit including a nozzle member which sprays gas into the processing space; and a plasma source generating plasma in the processing space. The gas supply unit comprises: a first gas supply portion supplying a first gas to the processing space through a first gas line; a second gas supply portion supplying a second gas different from the first gas to the processing space through a second gas line; and a third gas supply portion supplying a third gas different from the first gas and the second gas to the processing space through a third gas line. The nozzle member may comprise: a first nozzle member installed on the cover to supply the gas into the processing space from an upper side of the processing space; and a second nozzle member installed on a side wall of the housing to supply the gas into the processing space from a side of the processing space. Accordingly, the substrate can be processed uniformly.

Description

Gas supply unit and substrate processing apparatus and substrate processing method including the same

The present invention relates to a gas supply unit and an apparatus for processing a substrate including the same.

In order to manufacture a semiconductor device, various processes such as cleaning, deposition, photography, etching, and ion implantation are performed. Among semiconductor manufacturing processes, an atomic layer deposition process (hereinafter referred to as an ALD process) is a process of depositing an atomic layer on a substrate W using plasma. Specifically, the ALD process deposits a thin film on a substrate by supplying a precursor and a reactant to the processing space in a time-division manner and using a self-inhibition reaction (or self-control reaction) on the surface of the substrate. way for

Since the precursor and reactant react with each other to cause a chemical reaction (or physical reaction) to form a specific thin film, the precursor and reactant must be supplied to the processing space in a time-division manner in the ALD process. In order to supply different gases (eg, precursors and reactants) to the processing space, the structure of a gas supply unit supplying gases may become complicated. In addition, a space in which the precursor and the reactant flow must be separately secured inside the gas nozzle for injecting gas into the processing space. Even if the precursor and the reactant are supplied to the processing space at regular time intervals, when the precursor and reactant share a gas passage formed inside the gas nozzle, the precursor and reactant remaining inside the gas passage may react with each other. In this case, a maintenance cycle of the gas nozzle may be shortened, and a gas passage inside the gas nozzle may be clogged.

An object of the present invention is to provide a gas supply unit capable of uniformly processing a substrate and a substrate processing apparatus including the same.

Another object of the present invention is to provide a gas supply unit capable of efficiently supplying different types of gases to a processing space and a substrate processing apparatus including the same.

In addition, an object of the present invention is to provide a gas supply unit capable of minimizing structural complexity and a substrate processing apparatus including the same.

The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the description below.

The present invention provides an apparatus for processing a substrate. An apparatus for processing a substrate according to an embodiment includes a housing having an open upper surface and a processing space therein; a cover sealing the open upper surface of the housing; a support unit supporting a substrate within the processing space; a gas supply unit including a nozzle member injecting gas into the processing space; and a plasma source generating plasma in the processing space, wherein the gas supply unit includes: a first gas supply unit supplying a first gas to the processing space through a first gas line; a second gas supply unit supplying a second gas different from the first gas to the processing space through a second gas line; and a third gas supply unit for supplying a third gas different from the first gas and the second gas to the processing space through a third gas line, wherein the nozzle member is installed on the cover to control the processing space. a first nozzle member supplying the gas to the processing space from an upper side; and a second nozzle member installed on a sidewall of the housing to supply the gas to the processing space from a side of the processing space.

According to one embodiment, the first nozzle member is formed in a cylindrical shape, and includes a first part, a second part positioned below the first part, and a third part positioned below the second part. body containing; and a plurality of gas passages through which the gas flows inside the body, wherein the passages are formed in a central region of the body and formed in side portions and lower portions of the first portion. A central flow path connected to the first injection hole; and an edge channel formed on an edge region of the body and connected to a second spray hole formed on a side portion of the second portion and a lower portion of the second portion.

According to an embodiment, the third gas line may be connected to the second gas line, the first gas line may be connected to the central flow path, and the second gas line may be connected to the edge flow path.

According to one embodiment, a tube tube having a smaller diameter than the diameter of the central channel is inserted into the central channel, and the tube tube may be in fluid communication with the first injection hole formed in the lower portion of the first portion. there is.

According to one embodiment, the first gas line is connected to the tube pipe, wherein any one of the second gas line and the third gas line is connected to the central flow path, the second gas line and the third gas line Another one of the gas lines may be connected to the edge passage.

According to one embodiment, the second nozzle member may be provided in plurality, and the plurality of second nozzle members may be spaced apart from each other along a circumferential direction of the housing.

According to one embodiment, the third gas line is connected to the second gas line, the first gas line is connected to any part of a plurality of the second nozzle members, the second gas line is a plurality of It may be connected to other parts of the second nozzle members.

According to one embodiment, the plurality of second nozzle members may be disposed in a plurality of rows on the sidewall.

According to an embodiment, the first gas is a gas adsorbed on the surface of the substrate, and the second gas is a gas that reacts with the first gas or is excited in the processing space to etch a film formed on the substrate; The third gas may be a gas that purges an internal atmosphere of the processing space or contributes to excitation of the second gas in the processing space.

According to one embodiment, the second nozzle member may protrude from the sidewall in a direction toward the processing space, and may be positioned between the cover and the substrate supported by the support unit when viewed from the front.

According to one embodiment, the second nozzle member may be inclined in a direction toward the substrate supported by the support unit.

According to one embodiment, a flow rate controller for controlling the flow rate may be installed in each of the first gas line and the third gas line.

In addition, the present invention provides a gas supply unit for supplying gas to a processing space where a substrate is processed. A gas supply unit according to an embodiment includes a nozzle member for injecting the gas into the processing space; a first gas supply unit supplying a first gas to the processing space through a first gas line; a second gas supply unit supplying a second gas different from the first gas to the processing space through a second gas line; and a third gas supply unit supplying a third gas different from the first gas and the second gas to the processing space through a third gas line, wherein the nozzle member includes a first portion and the first portion. A body including a second part located above the first part and having a larger diameter than the first part, and a third part located above the second part and having a larger diameter than the second part; and a plurality of gas passages through which the gas flows inside the body, wherein the passages are formed in a central region of the body and formed in side portions and lower portions of the first portion. A central flow path connected to the first injection hole; and an edge channel formed on an edge region of the body and connected to a second spray hole formed on a side portion of the second portion and a lower portion of the second portion.

According to an embodiment, the first gas is supplied to the central passage among the central passage and the edge passage, and the second gas and the third gas are supplied to the edge passage among the central passage and the edge passage. can

According to one embodiment, a tube tube having a smaller diameter than the diameter of the central channel is inserted into the central channel, and the tube tube may be in fluid communication with the first injection hole formed in the lower portion of the first portion. there is.

According to one embodiment, the first gas is supplied to the tube pipe, and any one of the second gas and the third gas is supplied to any one of the central flow path and the edge flow path, and the second gas and Another one of the third gas may be supplied to the other one of the central passage and the edge passage.

According to one embodiment, a flow rate controller for controlling the flow rate may be installed in each of the first gas line and the third gas line.

According to an embodiment, the first gas is a gas adsorbed on the surface of the substrate, and the second gas is a gas that reacts with the first gas or is excited in the processing space to etch a film formed on the substrate; The third gas may be a gas that purges an internal atmosphere of the processing space or contributes to excitation of the second gas in the processing space.

According to one embodiment of the present invention, the substrate can be treated uniformly.

In addition, according to an embodiment of the present invention, different types of gas can be efficiently supplied to the processing space.

In addition, according to an embodiment of the present invention, structural complexity can be minimized.

The effects of the present invention are not limited to the above-mentioned effects, and effects not mentioned will be clearly understood by those skilled in the art from this specification and the accompanying drawings.

1 is a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram schematically illustrating a process chamber according to an exemplary embodiment of FIG. 1 .
3 is a perspective view of a first nozzle member according to an embodiment of FIG. 2 ;
4 is a cross-sectional view of the first nozzle member according to the embodiment of FIG. 3 taken along line AA.
5 is a view schematically showing a first nozzle according to an embodiment of FIG. 3 viewed from below.
FIG. 6 is a schematic view of a process chamber according to another embodiment of FIG. 1 .
7 is a perspective view of a first nozzle member according to an exemplary embodiment of FIG. 6 ;
8 is a cross-sectional view of the first nozzle member according to the embodiment of FIG. 7 taken along line BB.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited due to the examples described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shapes of components in the drawings are exaggerated to emphasize a clearer description.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms may be used for the purpose of distinguishing one component from another. For example, a first element may be termed a second element, and similarly, the second element may also be termed a first element, without departing from the scope of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 1 to 8 .

1 is a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 1 , a substrate processing apparatus 1 according to an embodiment of the present invention includes a load port 10, an atmospheric pressure transfer module 20, a vacuum transfer module 30, a load lock chamber 40, and a process A chamber 50 may be included.

The load port 10 may be disposed on one side of the normal pressure transfer module 20 to be described later. At least one load port 10 may be provided. The number of load ports 10 may increase or decrease depending on process efficiency and footprint conditions. A container (F) according to an embodiment of the present invention may be placed in the load port (10).

The container F is transported by a transport means (not shown) such as an Overhead Transfer Apparatus (OHT), an overhead conveyor, or an Automatic Guided Vehicle, or a load port 10 by an operator. It can be loaded into or unloaded from the load port (10). The container (F) may include various types of containers according to the type of goods to be stored. For example, the container F may be an airtight container such as a front opening unified pod (FOUP).

The normal pressure transfer module 20 and the vacuum transfer module 30 may be disposed along the first direction 2 . Hereinafter, when viewed from above, a direction perpendicular to the first direction (2) is defined as a second direction (4). In addition, a direction perpendicular to a plane including both the first direction 2 and the second direction 4 is defined as a third direction 6. For example, the third direction 6 may mean a direction perpendicular to the ground.

The normal pressure transfer module 20 may transfer the substrate W between the container F and the load lock chamber 40 to be described later. For example, the normal pressure transfer module 20 takes out the substrate W from the container F and transfers it to the load lock chamber 40, or takes out the substrate W from the load lock chamber 40 and transfers it to the container F. Can be returned internally.

The normal pressure transfer module 20 may include a transfer frame 220 and a first transfer robot 240 . The transport frame 220 may be disposed between the load port 10 and the load lock chamber 40 . The load port 10 may be connected to the transport frame 220 . The inside of the transport frame 220 may be maintained in an atmospheric pressure atmosphere.

A transport rail 230 and a first transport robot 240 are positioned in the transport frame 220 . The longitudinal direction of the transport rail 230 and the longitudinal direction of the transport frame 220 may be horizontal. For example, the longitudinal direction of the transport rail 230 may be formed along the second direction 4 . A first transport robot 240 may be positioned on the transport rail 230 .

The first transport robot 240 transports the substrate W. The first transport robot 240 may transport the substrate W between the container F seated in the load port 10 and the load lock chamber 40 to be described later. The first transfer robot 240 may move forward and backward in the second direction 4 along the transfer rail 230 . The first transfer robot 240 may move in a vertical direction (eg, the third direction 6). The first transfer robot 240 has a first transfer hand 242 that moves forward, backward, or rotates on a horizontal plane. At least one first transfer hand 242 may be provided. A substrate W is placed on the first transfer hand 242 . A plurality of first transfer hands 242 may be spaced apart from each other in the third direction 6 .

The vacuum transfer module 30 may be disposed between the load lock chamber 40 and the process chamber 50 to be described later. The vacuum transfer module 30 may include a transfer chamber 320 and a second transfer robot 340 .

The inside of the transfer chamber 320 may be maintained in a vacuum pressure atmosphere. A second transfer robot 340 is disposed in the transfer chamber 320 . For example, the second transfer robot 340 may be disposed in the center of the transfer chamber 320 . The second transfer robot 340 transfers the substrate W between the load lock chamber 40 and the process chamber 50 to be described later. Also, the second transfer robot 340 transfers the substrate W between the process chambers 50 . The second transfer robot 340 may move in a vertical direction. The second transfer robot 340 has a second transfer hand 342 that moves forward, backward, or rotates on a horizontal plane. At least one second transfer hand 342 may be provided. A substrate W is placed on the second transfer hand 342 . A plurality of second transfer hands 342 may be spaced apart from each other in the third direction 6 .

At least one process chamber 50 to be described below is connected to the transfer chamber 320 . According to one embodiment, the transfer chamber 320 may be provided in a polygonal shape. A load lock chamber 40 and a process chamber 50 to be described later may be disposed around the transfer chamber 320 . Unlike the above, the shape of the transfer chamber 320 and the number of process chambers 50 may be variously modified according to user needs or process requirements.

The load lock chamber 40 may be disposed between the transfer frame 220 and the transfer chamber 320 . The load lock chamber 40 has a buffer space in which the substrates W are exchanged between the transport frame 220 and the transfer chamber 320 . For example, the substrate W on which a predetermined process has been completed in the process chamber 50 may temporarily stay in the load lock chamber 40 . In addition, the substrate W, which is taken out from the container F and is scheduled to undergo a predetermined process, may temporarily stay in the load lock chamber 40 .

As described above, the inside of the transfer frame 220 may be maintained in an atmospheric pressure atmosphere, and the inside of the transfer chamber 320 may be maintained in a vacuum pressure atmosphere. The load lock chamber 40 is disposed between the transport frame 220 and the transfer chamber 320 so that its internal atmosphere can be switched between atmospheric pressure and vacuum pressure.

A plurality of process chambers 50 may be provided. The process chamber 50 may be a chamber that performs a predetermined process on the substrate (W). According to an embodiment of the present invention, the process chamber 50 may process the substrate W using plasma. For example, the process chamber 50 may be a chamber for performing an etching process of removing a thin film on the substrate W using plasma, a deposition process of forming a thin film on the substrate W, or a dry cleaning process. there is. In addition, the process chamber 50 may be a chamber for performing an atomic layer deposition (ALD) process in which different types of gases are alternately supplied and an atomic layer is deposited on the substrate W using plasma. there is. However, it is not limited thereto, and the plasma treatment process performed in the process chamber 50 may be variously modified into a known plasma treatment process.

FIG. 2 is a diagram schematically illustrating a process chamber according to an exemplary embodiment of FIG. 1 . Referring to FIG. 2 , the process chamber 50 according to an embodiment may process a substrate W using plasma. For example, the process chamber 50 may simultaneously perform an atomic layer deposition process of depositing an atomic layer on the substrate W using plasma and an etching process of etching (removing) a specific film formed on the substrate W using plasma. can

The process chamber 50 may include a housing 500 , a support unit 600 , a gas supply unit 700 , and a plasma source 900 .

The housing 500 has a processing space 501 . The processing space 501 may be a space in which the substrate W is processed. The housing 500 may have an open upper surface. For example, the housing 500 may have a cylindrical shape with an open upper surface. The open upper surface of the housing 500 may be sealed by a cover 550 to be described later. The processing space 501 may be maintained in a substantially vacuum atmosphere while processing the substrate W. The material of the housing 500 may include aluminum. Also, the housing 500 may be grounded.

According to one embodiment, a liner (not shown) may be disposed inside the housing 500 . The liner (not shown) may have a cylindrical shape with open upper and lower surfaces. A liner (not shown) may be disposed to face the inner wall of the housing 500 . The liner (not shown) may minimize damage to the inner wall of the housing 500 by plasma. Unlike the above example, a liner (not shown) may not be provided inside the housing 500 .

An opening (not shown) is formed in the side wall of the housing 500 . The opening (not shown) functions as a space in which the substrate W is carried into or taken out of the processing space 501 . The opening (not shown) may be selectively opened and closed by a door assembly (not shown).

An exhaust hole 510 is formed on the bottom surface of the housing 500 . The exhaust hole 510 is connected to the exhaust unit 520 . The exhaust unit 520 may adjust the pressure of the processing space 501 by exhausting the atmosphere of the processing space 501 . Also, the exhaust unit 520 may discharge process gas and impurities (byproduct) existing in the processing space 501 to the outside of the processing space 501 .

The exhaust unit 520 includes an exhaust line 522 and a pressure reducing member 524 . One end of the exhaust line 522 is connected to the exhaust hole 510 and the other end of the exhaust line 522 is connected to the pressure reducing member 524 . The pressure reducing member (not shown) may be a known device that applies negative pressure to the processing space 501 .

An exhaust baffle 530 may be positioned above the exhaust hole 510 to more uniformly exhaust the processing space 501 . The exhaust baffle 530 may be installed between a sidewall of the housing 500 and a support unit 600 to be described later. Also, when a liner (not shown) is provided inside the housing 500 , the exhaust baffle 530 may be installed between the liner (not shown) and the support unit 600 . When viewed from above, the exhaust baffle 530 may have a substantially ring shape. At least one baffle hole 532 may be formed in the exhaust baffle 530 . The baffle hole 532 may be a through hole penetrating the upper and lower surfaces of the exhaust baffle 530 . Process gas and impurities existing in the processing space 501 may be discharged through the baffle hole 532 , the exhaust hole 510 , and the exhaust line 522 .

The insulating member 540 may be made of an insulating material. The insulating member 540 may have a substantially ring shape. The insulating member 540 may be provided on the upper side of the housing 500 . The insulating member 540 may be disposed between the housing 500 and a cover 550 to be described later.

The cover 550 is located on the upper side of the housing 500 . The cover 550 seals the open upper surface of the housing 500 . According to one embodiment, the cover 550 covers the open upper surface of the housing 500 to define a lower processing space 501 . The cover 550 is generally formed in a plate shape. For example, the cover 550 may be formed in a disk shape. The cover 550 may include a dielectric substance window. A groove may be formed in a central portion including the center of the cover 550 . Grooves formed in the cover 550 may be formed stepwise. The groove formed in the central portion of the cover 550 may pass through upper and lower surfaces of the cover 550 . A first nozzle member 710 to be described later is inserted into the groove formed in the central portion of the cover 550 .

The support unit 600 is located within the processing space 501 . According to one embodiment, the support unit 600 supports the substrate W in the processing space 501 . The support unit 600 may include an electrostatic chuck (ESC) that adsorbs the substrate W using electrostatic force. Alternatively, the support unit 600 may support the substrate W in various ways such as a vacuum adsorption method or a mechanical clamping method. Hereinafter, the support unit 600 including the electrostatic chuck (ESC) will be described as an example.

The support unit 600 may include an electrostatic chuck 610 and an insulating plate 650 . The electrostatic chuck 610 supports the substrate W. The electrostatic chuck 610 may include a dielectric plate 620 and a base plate 630 .

The dielectric plate 620 is positioned above the support unit 600 . A substrate W is placed on the upper surface of the dielectric plate 620 . When the substrate W is placed on the upper surface of the dielectric plate 620 , an edge area of the substrate W may be located outside the dielectric plate 620 . According to one embodiment, the dielectric plate 620 may be formed in a disk shape. According to an example, the dielectric plate 620 may have a smaller diameter than the substrate W. According to one example, the dielectric plate 620 may be a dielectric.

An electrode 622 may be positioned inside the dielectric plate 620 . According to one example, the electrode 622 may be buried inside the dielectric plate 620 . The electrode 622 is electrically connected to the first power source 624 . The first power source 624 may include DC power. A first switch 626 may be installed in the first power source 624 . The electrode 622 may be electrically connected to or disconnected from the first power source 624 by turning on/off of the first switch 626 . When the first switch 626 is turned on, a direct current flows through the electrode 622 . An electrostatic force acts between the electrode 622 and the substrate W by the current flowing through the electrode 622 . Accordingly, the substrate W is adsorbed to the dielectric plate 620 by the electrostatic force.

In addition, a heater (not shown) may be disposed inside the dielectric plate 620 . A heater (not shown) disposed inside the dielectric plate 620 may be positioned below the electrode 622 . The heater (not shown) may include a spiral coil. A heater (not shown) transfers heat to the dielectric plate 620, and the heat transferred to the dielectric plate 620 may be transferred to the substrate W. However, unlike the above-described example, a heater (not shown) may not be disposed inside the dielectric plate 620 .

The base plate 630 is positioned below the dielectric plate 620 . According to one embodiment, the base plate 630 may have a disk shape. The upper surface of the base plate 630 may be formed to be stepped so that the central region is located relatively higher than the edge region. A central region of the upper surface of the base plate 630 may have an area corresponding to that of the lower surface of the dielectric plate 620 . A central region of the top surface of the base plate 630 may be bonded to the bottom surface of the dielectric plate 620 by an adhesive layer (not shown). A ring member 640 to be described later may be positioned above the edge region of the upper surface of the base plate 630 .

The base plate 630 may include a material having excellent heat and electrical conductivity. According to one example, the base plate 630 may include a metal plate. According to one example, the entirety of the base plate 630 may be made of a metal material. For example, the material of the base plate 630 may include aluminum.

The base plate 630 may be electrically connected to the second power source 630a. A second switch 630b may be installed in the second power source 630a. The base plate 630 may be electrically connected to or disconnected from the second power source 630b by turning on/off the second switch 630b. The second power source 630a may be a low frequency power source that generates low frequency power. The second power source 630a may apply low-frequency power to the base plate 630 . The base plate 630 may receive low-frequency power from the second power source 630a to improve the fluidity of the plasma formed in the processing space 501 . According to an embodiment, the base plate 630 may receive low-frequency power to improve straightness or drawing-in property of plasma generated in the processing space 501 . For example, when low-frequency power is applied to the base plate 630 , the plasma present in the processing space 501 may move toward the upper surface of the substrate W with linearity. However, unlike the above-described example, low-frequency power may not be applied to the base plate 630 .

A cooling passage 632 may be formed inside the base plate 630 . The cooling passage 632 functions as a passage through which cooling fluid circulates. According to one embodiment, the cooling fluid may include cooling water. According to one embodiment, the cooling passage 632 may be formed of a single passage. Also, the cooling passage 632 may be formed in a spiral shape.

Optionally, the cooling passage 632 may include a plurality of passages. For example, the plurality of passages may be formed in a ring shape having different radii while sharing the center of the base plate 630 inside the base plate 630 . The plurality of flow passages may be in fluid communication with each other. Also, the plurality of passages may be positioned at the same height as each other.

The cooling passage 632 is connected to the cooling fluid storage unit 636 through a cooling fluid supply line 634 . Cooling fluid is stored in the cooling fluid storage unit 363 . A cooler 638 may be located inside the cooling fluid storage unit 636 . The cooler 638 may cool the cooling fluid stored in the cooling fluid storage unit 636 to a predetermined temperature. Unlike the above, the cooler 638 may be installed in the cooling fluid supply line 634 . The cooling fluid may circulate along the cooling passage 632 and cool the base plate 630 . The dielectric plate 620 and the substrate W may be cooled together by the cooled base plate 630 . Thus, the substrate W can be maintained at a desired temperature.

Although not shown, a heat transfer channel (not shown) may be formed inside the base plate 630 . A heat transfer channel (not shown) may supply a heat transfer medium to the lower surface of the substrate (W). The heat transfer medium may be a fluid supplied to the lower surface of the substrate (W) in order to solve the temperature non-uniformity of the substrate (W) while the substrate (W) is processed using plasma. According to one example, the heat transfer medium may be helium (He) gas.

The ring member 640 is disposed on an edge region of the electrostatic chuck 610 . The ring member 640 has a ring shape. A ring member 640 is disposed along the circumference of the dielectric plate 620 . The upper surface of the ring member 640 may be formed stepwise so that the outer portion is higher than the inner portion. A top surface of the inner portion of the ring member 640 may be positioned at the same height as a top surface of the dielectric plate 620 . An upper surface of the inner portion of the ring member 640 may support a lower edge of the substrate W positioned outside the dielectric plate 620 . An outer portion of the ring member 640 may surround a side portion of the substrate W. According to one example, the ring member 640 may be a focus ring.

An insulating plate 650 is positioned below the base plate 630 . The insulating plate 650 may include an insulating material. The insulating plate 650 electrically insulates the base plate 630 from the housing 500 . When viewed from above, the insulating plate 650 may be formed in a circular plate shape. Upper and lower surfaces of the insulating plate 650 may have areas corresponding to those of the bottom surface of the base plate 630 .

3 is a perspective view of a first nozzle member according to an embodiment of FIG. 2 ; 4 is a cross-sectional view of the first nozzle member according to the embodiment of FIG. 3 taken along line A-A. 5 is a view schematically showing a first nozzle according to an embodiment of FIG. 3 viewed from below. Hereinafter, the gas supply unit 700 according to an embodiment of the present invention will be described in detail with reference to FIGS. 2 to 5 .

The gas supply unit 700 supplies gas to the processing space 501 . The gas supplied to the processing space 501 may include a first gas, a second gas, and a third gas. According to an embodiment, the first gas, the second gas, and the third gas may be different from each other. A detailed description of this will be given later.

The gas supply unit 700 may include a first nozzle member 710, a second nozzle member 760, a first gas supply unit 810, a second gas supply unit 820, and a third gas supply unit 830. can

The first nozzle member 710 injects gas into the processing space 501 . Specifically, the first nozzle member 710 supplies different gases supplied from each of the first gas supply unit 810, the second gas supply unit 820, and the third gas supply unit 830 to the processing space 501. can be sprayed with The first nozzle member 710 may be installed on the cover 550 . For example, the first nozzle member 710 may be installed in the central portion of the cover 550 . The first nozzle member 710 may be inserted into a groove formed in the central portion of the cover 550 . Accordingly, the first nozzle member 710 may inject different gases into the processing space 501 from the upper side of the processing space 501 .

The first nozzle member 710 may include a body 720 and a plurality of passages. The body 720 may have a substantially cylindrical shape. A plurality of passages and spray holes 741 and 742 to be described below may be formed in the body 720 . The body 720 may include a first part 721, a second part 722, and a third part 723 having different diameters. The first part 721, the second part 722, and the third part 723 may be integrally formed.

The first portion 721 may be located on a lower portion of the body 720 . The first part 721 may be formed in a substantially cylindrical shape. The first portion 721 may have a smaller diameter than the diameters of the second portion 722 and the third portion 723 described later. According to one embodiment, the first portion 721 may be positioned to protrude into the processing space 501 .

The second portion 722 may be positioned between the first portion 721 and a third portion 723 to be described later. Also, the second portion 722 may be positioned above the first portion 721 . The second part 722 may be formed in a substantially cylindrical shape. The second part 722 may have a larger diameter than the diameter of the first part 721 . Also, the second portion 722 may have a diameter smaller than that of the third portion 723 .

The third portion 723 may be located on an upper portion of the body 720 . Also, the third portion 723 may be located above the second portion 722 . The third portion 723 may be formed in a disk shape having a constant thickness. The third portion 723 may have a larger diameter than the diameters of the first portion 721 and the second portion 722 . The third portion 723 may be supported by the cover 550 . Specifically, the lower end of the third portion 723 may be supported on the upper end of the stepped groove formed in the cover 550 .

A plurality of flow channels may be formed in the body 720 . The plurality of passages may include a central passage 731 and an edge passage 732 .

The central passage 731 may be formed in a central region including the center of the body 720 . According to one embodiment, the central channel 731 may have a longitudinal direction toward the ground. One end of the central flow path 731 may be connected to a first gas line 814 to be described later. In addition, the other end of the central passage 731 may be connected to a first injection hole 741 to be described later. Accordingly, the first gas supplied from the first gas line 814 may be supplied to the first injection hole 741 through the central passage 731 .

The edge passage 732 may be formed in an edge region surrounding the central region of the body 720 . According to one embodiment, the edge channel 732 may have a ring shape when viewed from above. Also, the edge channel 732 may have a longitudinal direction toward the ground. One end of the edge passage 732 may be connected to a second gas line 824 to be described later. In addition, the other end of the edge passage 732 may be connected to a second injection hole 742 to be described later.

A plurality of spray holes 741 and 742 may be formed in the body 720 . According to one embodiment, the plurality of injection holes 741 and 742 may be formed in the first portion 721 and the second portion 722 . The plurality of spray holes 741 and 742 may include a first spray hole 741 and a second spray hole 742 .

The first spray hole 741 may be formed in the first portion 721 . A plurality of first injection holes 741 may be provided. According to an embodiment, some of the plurality of first injection holes 741 may be formed in a lower portion of the first portion 721 . When viewed from above, the first injection holes 741 formed in the lower portion of the first portion 721 may be formed at a portion overlapping the central passage 731 . Also, some of the plurality of first injection holes 741 may be formed on the side of the first portion 721 . The first spray holes 741 formed in the lower portion of the first portion 721 may be formed along the circumferential direction of the first portion 721 . Also, the first spray holes 741 may be arranged in a plurality of rows along the circumferential direction of the first portion 721 . As described above, the first injection hole 741 is connected to the central passage 731 . Accordingly, the first injection hole 741 and the central passage 731 may be in fluid communication.

The second spray hole 742 may be formed in the second part 722 . A plurality of second spray holes 742 may be provided. According to one embodiment, the plurality of second injection holes 742 may be formed in a lower portion of the second portion 722 . Also, a plurality of second injection holes 742 may be formed on the side of the second portion 722 . The second spray holes 742 may be formed along the circumferential direction of the second portion 722 . Also, the second spray holes 742 may be arranged in a plurality of rows along the circumferential direction of the second portion 722 . As described above, the second spray hole 742 is connected to the edge passage 732 . Accordingly, the second spray hole 742 and the edge passage 732 may be in fluid communication.

The second nozzle member 760 injects gas into the processing space 501 . Specifically, the second nozzle member 760 receives different gases from each of the first gas supply unit 810, the second gas supply unit 820, and the third gas supply unit 830, which will be described later, and receives different gases supplied from each other. Gases may be injected into the processing space 501 . As shown in FIG. 2 , the second nozzle member 760 may be installed on a sidewall of the housing 500 . A plurality of second nozzle members 760 may be provided. For example, the plurality of second nozzle members 760 may be spaced apart from each other along the circumference of the sidewall of the housing 500 . For example, the second nozzle members 760 may be arranged in two rows along the circumference of the sidewall of the housing 500 . Accordingly, the plurality of second nozzle members 760 may inject different gases into the processing space 501 from the side of the processing space 501 .

The second nozzle member 760 may be positioned above the substrate W supported by the support unit 600 . The second nozzle member 760 may protrude into the processing space 501 . According to one embodiment, the second nozzle member 760 may be inclined downward. Specifically, the second nozzle member 760 may be inclined in a direction toward the substrate W supported by the support unit 600 .

The first gas supply unit 810 supplies a first gas. The first gas supply unit 810 may supply the first gas to the processing space 501 via the first nozzle member 710 and the second nozzle member 760 . The first gas supply unit 810 may include a first gas source 812 , a first gas line 814 , a first valve 816 , and a first flow controller 818 .

The first gas source 812 stores a first gas. According to an embodiment, the first gas may be a gas adsorbed on the surface of the substrate W supported by the support unit 600 . For example, the first gas may be a precursor gas used in an atomic layer deposition process. That is, the first gas may be a gas adsorbed on the surface of the substrate W to cause a self-limited reaction.

The first gas line 814 (solid line in FIG. 2 ) is connected to the first gas source 812 . The first gas line 814 connected to the first gas source 812 may be branched and connected to the first nozzle member 710 and the second nozzle member 760 respectively. Specifically, the first gas line 814 may be connected to the central flow path 731 . Also, the first gas line 814 may be connected to any part of the plurality of second nozzle members 760 . As will be described later, the first gas line 814 may be connected to second nozzle members 760 to which the second gas line 824 is not connected among the second nozzle members 760 .

The first gas line 814 may supply the first gas to the central passage 731 and the second nozzle member 760 . The first nozzle member 710 receiving the first gas through the first gas line 814 may inject the first gas from the upper side of the processing space 501 through the first spray hole 741 . In addition, the second nozzle member 760 receiving the first gas through the first gas line 814 may inject the first gas from the side of the processing space 501 .

First valves 816a and 816b may be installed in the first gas line 814 . The first valves 816a and 816b may be on/off valves. Optionally, the first valves 816a and 816b may be flow control valves.

The first flow controller 818 may be installed in the first gas line 814 . The first flow controller 818 may adjust the flow rate of the first gas flowing through the first gas line 814 . According to one embodiment, the first flow controller 818 may be a flow rate controller (FRC). Also, the first flow controller 818 may be a 2-Way FRC (Flow Rate Controller).

The second gas supply unit 820 supplies a second gas. The second gas supply unit 820 may supply the second gas to the processing space 501 through the first nozzle member 710 and the second nozzle member 760 . The second gas supply unit 820 may include a second gas source 822 , a second gas line 824 , and a second valve 826 .

The second gas source 822 stores a second gas. According to an embodiment, the second gas may be a gas that reacts with the first gas adsorbed on the surface of the substrate (W). For example, the second gas may be a gas that deposits a thin film on the substrate (W) by reacting with the first gas adsorbed on the surface of the substrate (W). That is, the second gas may be a gas that reacts with the first gas. Also, the second gas may be a gas excited in the processing space 501 and etching a specific film formed on the substrate W.

The second gas line 824 (dotted line in FIG. 2 ) is connected to the second gas source 822 . The second gas line 824 connected to the second gas source 822 may be branched and connected to the first nozzle member 710 and the second nozzle member 760 , respectively. Specifically, the second gas line 824 may be connected to the edge passage 732 . Also, the second gas line 824 may be connected to some of the plurality of second nozzle members 760 . As described above, some of the plurality of second nozzle members 760 are connected to the first gas line 814, and some of the plurality of second nozzle members 760 are connected to the second gas line 824. ) can be associated with

The second gas line 824 may supply the second gas to the edge passage 732 and the second nozzle member 760 . The first nozzle member 710 receiving the second gas through the second gas line 824 may inject the second gas from the upper side of the processing space 501 through the second spray hole 742 . In addition, the second nozzle member 760 receiving the second gas through the second gas line 824 may supply the second gas from the side of the processing space 501 .

A second valve 826 may be installed in the second gas line 824 . Since the second valve 826 has the same or similar structure as the first valve 816 described above, duplicate description thereof will be omitted.

The third gas supply unit 830 supplies a third gas. The third gas supply unit 830 may supply the third gas to the processing space 501 via the first nozzle member 710 and the second nozzle member 760 . Also, the third gas supply unit 830 may supply the third gas to the processing space 501 via the second gas supply unit 820 . The third gas supply unit 830 may include a third gas source 832 , a third gas line 834 , a third valve 836 , and a second flow controller 838 .

The third gas source 832 stores a third gas. According to an embodiment, the third gas may be a gas that contributes to igniting plasma generated in the processing space 501 . That is, the third gas may be a gas that contributes to the excitation of the second gas by the electric field generated in the processing space 501 . Also, the third gas source 832 may be a gas for purging the processing space 501 . Also, the third gas source 832 may function as a carrier gas. According to one embodiment, the third gas source 832 may include an inert gas. Also, the third gas may be a gas that does not react with the second gas.

The third gas line 834 (double-dashed line in FIG. 2 ) is connected to the third gas source 832 . The third gas line 834 connected to the third gas source 832 may be branched and connected to the second gas line 824 . Specifically, one of the branched third gas lines 834 is connected to the second gas line 824 connected to the first nozzle member 710, and the other of the branched third gas lines 834 is connected to the first nozzle member 710. It may be connected to the second gas line 824 connected to the two-nozzle member 760 . Accordingly, the third gas line 834 may supply the third gas to the edge passage 732 and the second nozzle member 760 through the second gas line 824 .

The first nozzle member 710 receiving the third gas sequentially through the third gas line 834 and the second gas line 824 is supplied from the upper side of the processing space 501 through the second spray hole 742. A third gas can be injected. In addition, the second nozzle member 760 receiving the third gas sequentially through the third gas line 834 and the second gas line 824 may inject the third gas from the side of the processing space 501 . there is.

Third valves 836a and 836b may be installed in the third gas line 834 . The third valves 836a and 836b may be on/off valves. Optionally, the third valves 836a and 836b may be flow control valves. The second flow controller 838 may be installed in the third gas line 834 . The second flow controller 838 may adjust the flow rate of the third gas flowing through the third gas line 834 . According to one embodiment, the second flow controller 838 may be a flow rate controller (FRC). Also, the second flow controller 838 may be a 2-Way FRC (Flow Rate Controller).

Referring to FIG. 2 , the plasma source 900 excites the gas supplied to the processing space 501 into a plasma state. For example, the plasma source 900 may excite the second gas supplied to the processing space 501 into a plasma state. The plasma source 900 according to an embodiment of the present invention may use an inductively coupled plasma (ICP). However, it is not limited thereto, and the plasma source 900 may be modified and used with various devices capable of generating plasma, such as capacitively coupled plasma (CCP) and microwave plasma. Hereinafter, a case in which inductively coupled plasma (ICP) is used as the plasma source 900 will be described as an example.

The plasma source 900 may include an antenna housing 910 , a plasma power source 920 , and an antenna 930 . The antenna housing 910 may be formed in a substantially cylindrical shape. According to one embodiment, the antenna housing 910 may have a cylindrical shape with an open bottom. The antenna housing 910 may have a diameter corresponding to that of the housing 500 . The antenna housing 910 may be disposed above the housing 500 . Also, the antenna housing 910 may be disposed above the cover 550 . According to one embodiment, the lower end of the antenna housing 910 can be detached from the cover 550 . The antenna housing 910 has an inner space. An antenna 930 to be described later is disposed in the inner space of the antenna housing 910 .

The plasma power source 920 may be located outside the process chamber 50 . The plasma power source 920 may apply high-frequency power to an antenna 930 to be described later. According to an embodiment, the plasma power source 920 may be an RF power source. An end of the power line to which the plasma power source 920 is connected may be grounded. An impedance matcher (not shown) may be installed in the power line.

The antenna 930 may include a spiral coil wound with multiple circuits. The coil may be disposed at a position facing the substrate (W). For example, when viewed from above, the coil may be disposed at a position overlapping the substrate W supported by the support unit 600 . The coil is connected to the plasma power source 920 and receives power from the plasma power source 920 . According to an embodiment, the coil may induce a time-varying electric field in the processing space 501 by receiving high-frequency power from the plasma power supply 920 . Accordingly, the gas supplied to the processing space 501 may be excited into plasma. For example, the second gas supplied to the processing space 501 may be excited into plasma.

In a chamber performing an atomic layer deposition process, the first gas and the second gas may react with each other. Accordingly, before the first gas and the second gas are supplied to the processing space 501, when the flow path is shared, the first gas and the second gas may react within the flow path. In this case, a reactant is formed inside the passage, and the passage may be blocked by the formed reactant.

Therefore, according to the above-described embodiment of the present invention, since the first gas and the second gas can flow in different flow paths in the first nozzle member 710 and the second nozzle member 760, the processing space 501 ), it is possible to block the first gas and the second gas from reacting with each other before being supplied. In addition, since there is no need to install a member for dispensing gas other than the first nozzle member 710 and the second nozzle member 760 for supplying gases into the processing space 501, structural complexity can be minimized. In addition, by designing the third gas that does not react with the second gas to share the passage through which the second gas flows, the structure can be simplified more efficiently.

In addition, by installing the 2-way flow rate controller in the first gas line 814, it is possible to efficiently control the supply amount of the first gas accompanying the self-inhibited reaction in the atomic layer deposition process. In addition, by installing the 2-way flow rate controller in the third gas line 834, the amount of purge in the processing space 501 can be efficiently adjusted after the self-inhibition reaction is completed. In addition, by adjusting the amount of the third gas by the 2-way flow controller, the ignition degree of plasma can be efficiently adjusted.

Hereinafter, a process chamber according to another embodiment of the present invention will be described. A process chamber according to an embodiment described below is substantially the same as or similar to the above-described process chamber except for additionally described cases.

FIG. 6 is a schematic view of a process chamber according to another embodiment of FIG. 1 . 7 is a perspective view of a first nozzle member according to an exemplary embodiment of FIG. 6 ; 8 is a cross-sectional view of the first nozzle member according to the embodiment of FIG. 7 taken along line BB.

6 to 8 , the first nozzle member 710 according to an embodiment of the present invention may include a body 720, a plurality of flow passages, and a tube pipe 750. Since the structure of the body 720 and the plurality of passages according to an embodiment is substantially the same as or similar to the structure described with reference to FIGS. 2 to 5 , a description thereof will be omitted.

According to one embodiment, the tube tube 750 may be a tube having a substantially circular cross section. The tube tube 750 may be located inside the body 720 . According to one embodiment, the diameter of the tube tube 750 may be smaller than the diameter of the central flow path 731 . Accordingly, the tube tube 750 may be located inside the central flow passage 731 . That is, the tube tube 750 may be inserted into the central passage 731 .

When viewed from above, the tube pipe 750 may overlap the first injection holes 741 formed in the lower portion of the first portion 721 . Specifically, the inside of the tube tube 750 may be in fluid communication with the first spray hole 741 . The tube pipe 750 may be connected to the first gas line 814 . Accordingly, the first gas is supplied to the first injection hole 741 formed in the lower part of the first part 721 through the first gas line 814 and the tube tube 750 sequentially, and the first injection hole 741 The first gas supplied to ) may be injected into the processing space 501 .

A second gas line 824 may be connected to the central flow path 731 . Specifically, the second gas line 824 may be connected to an outer region of the tube pipe 750 in the entire region of the central passage 731 . Accordingly, the second gas may be supplied to the first injection hole 741 formed on the side of the first portion 721 through the second gas line 824 and the central passage 731 sequentially. The second gas supplied to the first injection hole 741 formed on the side of the first portion 721 may be injected into the processing space 501 .

A third gas line 834 may be connected to the edge passage 732 . Accordingly, the third gas may be supplied to the second injection hole 742 through the third gas line 834 and the edge passage 732 sequentially. The third gas supplied to the second injection hole 742 formed on the side and bottom of the second part 722 may be injected into the processing space 501 .

A plurality of second nozzle members 760 may be provided. According to one embodiment, the plurality of second nozzle members 760 may be spaced apart from each other along the circumference of the sidewall of the housing 500 . For example, the second nozzle members 760 may be arranged in three rows along the circumference of the sidewall of the housing 500 .

The first gas line 814 may be connected to any part of the first nozzle member 710 and second nozzle members 760 to be described later. According to one embodiment, the first gas line 814 may be connected to the tube pipe 750. Specifically, one end of the first gas line 814 is connected to the first gas source 812, and the other end is branched and connected to any part of the tube tube 750 and the second nozzle member 760, respectively. .

The second gas line 824 may be connected to other parts of the first nozzle member 710 and second nozzle members 760 to be described later. According to one embodiment, the second gas line 824 may be connected to the central flow path 731 . Specifically, the second gas line 824 may be connected to an area outside the area where the tube pipe 750 is formed, among the entire area of the central passage 731 . Also, the second gas line 824 may be connected to second nozzle members 760 to which the first gas line 814 is not connected among the second nozzle members 760 .

The third gas line 834 may be connected to another part of the first nozzle member 710 and second nozzle members 760 to be described later. According to one embodiment, the third gas line 834 may be connected to the edge passage 732 . Also, the third gas line 834 may be connected to second nozzle members 760 to which the first gas line 814 and the second gas line 824 are not connected among the second nozzle members 760. .

In the above-described embodiment, the second gas line 824 is connected to the central flow path 731 and the third gas line 834 is connected to the edge flow path 732 as an example, but is not limited thereto. . For example, the second gas line 824 may be connected to the edge passage 732 and the third gas line 834 may be connected to the central passage 731 .

The above detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and describe preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed in this specification, within the scope equivalent to the written disclosure and / or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in the specific application field and use of the present invention are also possible. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to cover other embodiments as well.

10: load port
20: normal pressure transfer module
30: vacuum transfer module
40: load lock chamber
50: process chamber
500: housing
600: support unit
700: gas supply unit
710: first nozzle member
720: body
721: first part
722: second part
723: third part
731: central euro
732: Edge Euro
741: first injection hole
742: second injection hole
750: tube tube
760: second nozzle member
810: first gas supply unit
820: second gas supply unit
830: third gas supply unit

Claims (18)

In the apparatus for processing the substrate,
a housing with an open upper surface and a processing space therein;
a cover sealing the open upper surface of the housing;
a support unit supporting a substrate within the processing space;
a gas supply unit including a nozzle member injecting gas into the processing space; and
A plasma source generating plasma in the processing space,
The gas supply unit,
a first gas supply unit supplying a first gas to the processing space through a first gas line;
a second gas supply unit supplying a second gas different from the first gas to the processing space through a second gas line; and
A third gas supply unit supplying a third gas different from the first gas and the second gas to the processing space through a third gas line;
The nozzle member,
a first nozzle member installed on the cover to supply the gas from an upper side of the processing space to the processing space; and
and a second nozzle member installed on a sidewall of the housing to supply the gas to the processing space from a side of the processing space. According to claim 1,
The first nozzle member,
a body formed in a cylindrical shape and including a first part, a second part located above the first part, and a third part located above the second part; and
It includes a plurality of gas passages through which the gas flows inside the body,
The euro is
a central flow path formed in a central region of the body and connected to first injection holes formed in side portions of the first portion and in a lower portion of the first portion; and
and an edge channel formed on an edge region of the body and connected to second injection holes formed on a side portion of the second portion and a lower portion of the second portion. According to claim 2,
The third gas line is connected to the second gas line,
The first gas line is connected to the central flow path, and the second gas line is connected to the edge flow path. According to claim 2,
A tube having a smaller diameter than the diameter of the central passage is inserted into the central passage,
The tube tube is in fluid communication with the first injection hole formed in the lower portion of the first portion. According to claim 4,
The first gas line is connected to the tube pipe,
One of the second gas line and the third gas line is connected to the central flow path,
The other one of the second gas line and the third gas line is connected to the edge passage. According to claim 1,
The second nozzle member is provided in plurality,
A plurality of second nozzle members are disposed spaced apart from each other along a circumferential direction of the housing. According to claim 6,
The third gas line is connected to the second gas line,
The first gas line is connected to any part of the plurality of second nozzle members,
The second gas line is connected to another part of the plurality of second nozzle members. According to claim 7,
The plurality of second nozzle members are arranged in a plurality of rows on the sidewall. According to claim 1,
The first gas is a gas adsorbed on the surface of the substrate,
The second gas is a gas that reacts with the first gas or is excited in the processing space to etch a film formed on the substrate;
The substrate processing apparatus according to claim 1 , wherein the third gas is a gas that purges an internal atmosphere of the processing space or contributes to excitation of the second gas in the processing space. According to any one of claims 1 to 9,
The second nozzle member,
A substrate processing apparatus protruding from the sidewall in a direction toward the processing space and positioned between the cover and the substrate supported by the support unit when viewed from the front. According to any one of claims 1 to 9,
The second nozzle member,
A substrate processing apparatus, characterized in that inclined in a direction toward the substrate supported by the support unit. According to any one of claims 1 to 9,
A substrate processing apparatus in which a flow rate controller for controlling a flow rate is installed in each of the first gas line and the third gas line. A gas supply unit for supplying gas to a processing space in which a substrate is processed,
a nozzle member injecting the gas into the processing space;
a first gas supply unit supplying a first gas to the processing space through a first gas line;
a second gas supply unit supplying a second gas different from the first gas to the processing space through a second gas line; and
A third gas supply unit supplying a third gas different from the first gas and the second gas to the processing space through a third gas line,
The nozzle member,
A first part, a second part located above the first part and having a larger diameter than the first part, and a third part located above the second part and having a larger diameter than the second part. body; and
It includes a plurality of gas passages through which the gas flows inside the body,
The euro is
a central flow path formed in a central region of the body and connected to first injection holes formed in side portions of the first portion and in a lower portion of the first portion; and
and an edge passage formed on an edge region of the body and connected to second injection holes formed on a side portion of the second portion and a lower portion of the second portion. According to claim 13,
The first gas is supplied to the central passage among the central passage and the edge passage,
The gas supply unit of claim 1 , wherein the second gas and the third gas are supplied to the edge passage of the central passage and the edge passage. According to claim 13,
A tube having a smaller diameter than the diameter of the central passage is inserted into the central passage,
The gas supply unit of claim 1 , wherein the tube is in fluid communication with the first injection hole formed in the lower portion of the first portion. According to claim 15,
The first gas is supplied to the tube tube,
Any one of the second gas and the third gas is supplied to any one of the central passage and the edge passage,
The other one of the second gas and the third gas is supplied to the other one of the central passage and the edge passage. According to claim 13,
A gas supply unit in which a flow rate controller for controlling a flow rate is installed in each of the first gas line and the third gas line. According to any one of claims 13 to 17,
The first gas is a gas adsorbed on the surface of the substrate,
The second gas is a gas that reacts with the first gas or is excited in the processing space to etch a film formed on the substrate;
The gas supply unit of claim 1, wherein the third gas is a gas that purges an internal atmosphere of the processing space or contributes to excitation of the second gas in the processing space.

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