KR20230099615A - Gas supplying unit and apparatus for treating substrate with the unit - Google Patents

Abstract

The present invention provides an apparatus for processing a substrate. An apparatus for processing a substrate according to an embodiment includes a housing having a processing space therein; a support unit supporting a substrate in the processing space; and a gas supply unit supplying gas to the processing space, wherein the gas supply unit includes a nozzle member connected to a gas line to inject gas into the processing space, wherein the nozzle member is supported by the support unit. The gas may be supplied to the processing space at a first angle toward the substrate and at a second angle different from the first angle.

Description

Gas supply unit and substrate processing apparatus and substrate processing method including the same

The present invention relates to a gas supply unit and an apparatus for processing a substrate including the same.

In order to manufacture a semiconductor device, various processes such as cleaning, deposition, photography, etching, and ion implantation are performed. In various processes for manufacturing semiconductor devices, gas is supplied to a processing space for processing a substrate. For example, in a process of processing a substrate using plasma during a semiconductor manufacturing process, plasma is generated by exciting a gas supplied to a processing space under a strong electric field, a very high temperature, or RF electromagnetic fields.

Gas is supplied to the processing space from various regions such as the upper side of the processing space and the side of the processing space. In particular, in order to supply gas from the side of the processing space, a nozzle for injecting gas must be installed on the side wall of the housing defining the processing space. When the nozzle is fixedly installed on the sidewall of the housing, the angle of the nozzle or the spraying direction of the nozzle is structurally limited.

In a process for manufacturing a semiconductor device, a plurality of gases having different characteristics may be supplied to a processing space. For example, gases having different molecular weights may be supplied to the processing space. In this case, gases having different molecular weights have different fluidity in the processing space. In particular, when gases having different characteristics are supplied to the processing space through a nozzle fixed to a sidewall of the housing, the respective gases exhibit different fluidity within the processing space.

For example, when the first gas is supplied to the processing space using a nozzle installed on a sidewall and the first gas acts on the first region on the substrate, a second gas having a different molecular weight from the first gas is supplied to the processing space using the same nozzle. When supplied to the second gas may act on a second region different from the first region. Accordingly, when gases having different characteristics are collectively injected into the processing space using nozzles fixed to the sidewall of the housing and having the same angle or spraying in the same direction, the different gases in the processing space have the same fluidity. does not show, and cannot act consistently on the substrate, resulting in lowering the efficiency of the process.

An object of the present invention is to provide a gas supply unit capable of uniformly processing a substrate and a substrate processing apparatus including the same.

Another object of the present invention is to provide a gas supply unit capable of efficiently supplying different types of gases to a processing space and a substrate processing apparatus including the same.

Another object of the present invention is to provide a gas supply unit capable of adjusting a direction of gas injected toward a processing space and a substrate processing apparatus including the same.

Another object of the present invention is to provide a gas supply unit capable of adjusting an area in which gas supplied to a processing space flows, and a substrate processing apparatus including the same.

The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the description below.

The present invention provides an apparatus for processing a substrate. An apparatus for processing a substrate according to an embodiment includes a housing having a processing space therein; a support unit supporting a substrate in the processing space; and a gas supply unit supplying gas to the processing space, wherein the gas supply unit includes a nozzle member connected to a gas line to inject gas into the processing space, wherein the nozzle member is supported by the support unit. The gas may be supplied to the processing space at a first angle toward the substrate and at a second angle different from the first angle.

According to one embodiment, the nozzle member may include a feeding housing having an inner space and having a spray hole in fluid communication with the processing space; a feeding tube located in the inner space and having a feeding hole in fluid communication with the inner space; and a driving unit for moving the feeding tube in the inner space.

According to one embodiment, the injection hole includes a first injection hole and a second injection hole, the first injection hole is formed inclined at the first angle at the front end of the feeding housing, and the second injection hole is It may be formed inclined at the second angle at the lower end of the feeding housing.

According to one embodiment, the gas line may be connected to one end of the feeding tube, and the feeding hole may be formed at the other end of the feeding tube facing the first injection hole.

According to one embodiment, a sealing member surrounding the first spray hole may be installed in the inner space.

According to an embodiment, the driving unit moves the feeding tube between a first injection position and a second injection position, wherein the first injection position is such that the feeding tube moves forward so that the other end of the feeding tube comes into contact with the sealing member. position, and the second injection position may be a position in which the feeding tube moves backward and the other end of the feeding tube is spaced apart from the sealing member.

According to an embodiment, the first spray hole and the second spray hole may be disposed to protrude from a sidewall of the housing toward the processing space.

According to one embodiment, a plurality of nozzle members may be installed on a sidewall of the housing along a circumferential direction of the housing.

According to one embodiment, a portion of the plurality of nozzle members is connected to a first gas line for supplying a first gas, and another portion of the plurality of nozzle members receives a second gas different from the first gas. It may be connected to the second gas line for supplying.

According to an embodiment, a nozzle member connected to the first gas line and a nozzle member connected to the second gas line may be alternately disposed along a circumferential direction of the housing.

According to an embodiment, the first gas may be a gas adsorbed on the surface of the substrate, and the second gas may be a gas that reacts with the first gas or is excited in the processing space to etch a film formed on the substrate. there is.

In addition, the present invention provides a gas supply unit that supplies gas to a processing space through a nozzle member. The nozzle member may include: a feeding housing having an inner space and having a spray hole communicating with the processing space; a feeding tube located in the inner space and having a feeding hole in fluid communication with the inner space; and a driving unit for moving the feeding tube in the inner space, wherein the gas is directed at a first angle toward a substrate located in the processing space through the injection hole and at a second angle different from the first angle in the processing space. can be supplied to

According to one embodiment, the injection hole includes a first injection hole and a second injection hole, the first injection hole is formed to be inclined downward at the first angle at the front end of the feeding housing, and the second injection hole may be formed to be inclined downward at the second angle at the lower end of the feeding housing.

According to one embodiment, the gas line may be connected to one end of the feeding tube, and the feeding hole may be formed at the other end of the feeding tube facing the first injection hole.

According to an embodiment, the driving unit moves the feeding tube between a first injection position and a second injection position, wherein the first injection position causes the feeding tube to move forward so that the feeding hole is connected to the first injection hole. It is a position in fluid communication with the first injection hole among the second injection holes, and the second injection position is when the feeding tube moves backward, so that the feeding hole is in contact with the first injection hole and the second injection hole, respectively. It may be a location in fluid communication.

According to one embodiment, a sealing member surrounding the first spray hole may be installed in the inner space.

According to an embodiment, a plurality of nozzle members are installed along a circumferential direction of a sidewall of a housing defining the processing space, and a first gas line for supplying a first gas to some of the plurality of nozzle members; and another part of the plurality of nozzle members may be connected to a second gas line supplying a second gas different from the first gas.

According to an embodiment, the first gas may be a gas adsorbed on the surface of the substrate, and the second gas may be a gas that reacts with the first gas or is excited in the processing space to etch a film formed on the substrate. there is.

According to one embodiment of the present invention, the substrate can be treated uniformly.

In addition, according to an embodiment of the present invention, different types of gas can be efficiently supplied to the processing space.

In addition, according to one embodiment of the present invention, the direction of the gas injected toward the processing space can be adjusted.

In addition, according to an embodiment of the present invention, a region in which gas supplied to the processing space flows may be adjusted.

The effects of the present invention are not limited to the above-mentioned effects, and effects not mentioned will be clearly understood by those skilled in the art from this specification and the accompanying drawings.

1 is a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram schematically illustrating a process chamber according to an exemplary embodiment of FIG. 1 .
FIG. 3 is a view of a second nozzle member disposed according to an embodiment of FIG. 2 viewed from above.
FIG. 4 is a longitudinal cross-sectional view of part A of FIG. 2, schematically showing a second nozzle member according to an exemplary embodiment.
5 is a longitudinal cross-sectional view schematically showing a state when the feeding tube according to the embodiment of FIG. 4 is positioned at a second injection position.
FIG. 6 is a longitudinal cross-sectional view schematically illustrating a gas flow when the feeding tube according to the embodiment of FIG. 4 is positioned at a first injection position.
FIG. 7 is a longitudinal cross-sectional view schematically illustrating a gas flow when the feeding tube according to the exemplary embodiment of FIG. 4 is positioned at a second injection position.
8 is a longitudinal cross-sectional view schematically showing a state when the feeding tube according to another embodiment of FIG. 4 is located in a third position.
FIG. 9 is a longitudinal cross-sectional view of part A of FIG. 2, schematically showing a second nozzle member according to another embodiment.
FIG. 10 is a view schematically showing a front view of a second nozzle member according to another embodiment of FIG. 2 .
FIG. 11 is a view schematically showing a second nozzle member according to another embodiment of FIG. 10 viewed from below.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited due to the examples described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shapes of components in the drawings are exaggerated to emphasize a clearer description.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms may be used for the purpose of distinguishing one component from another. For example, a first element may be termed a second element, and similarly, the second element may also be termed a first element, without departing from the scope of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 1 to 11 .

1 is a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 1 , a substrate processing apparatus 1 according to an embodiment of the present invention includes a load port 10, an atmospheric pressure transfer module 20, a vacuum transfer module 30, a load lock chamber 40, and a process A chamber 50 may be included.

The load port 10 may be disposed on one side of the normal pressure transfer module 20 to be described later. At least one load port 10 may be provided. The number of load ports 10 may increase or decrease depending on process efficiency and footprint conditions. A container (F) according to an embodiment of the present invention may be placed in the load port (10).

The container F is transported by a transport means (not shown) such as an Overhead Transfer Apparatus (OHT), an overhead conveyor, or an Automatic Guided Vehicle, or a load port 10 by an operator. It can be loaded into or unloaded from the load port (10). The container (F) may include various types of containers according to the type of goods to be stored. For example, the container F may be an airtight container such as a front opening unified pod (FOUP).

The normal pressure transfer module 20 and the vacuum transfer module 30 may be disposed along the first direction 2 . Hereinafter, when viewed from above, a direction perpendicular to the first direction (2) is defined as a second direction (4). In addition, a direction perpendicular to a plane including both the first direction 2 and the second direction 4 is defined as a third direction 6. For example, the third direction 6 may mean a direction perpendicular to the ground.

The normal pressure transfer module 20 may transfer the substrate W between the container F and the load lock chamber 40 to be described later. For example, the normal pressure transfer module 20 takes out the substrate W from the container F and transfers it to the load lock chamber 40, or takes out the substrate W from the load lock chamber 40 and transfers it to the container F. Can be returned internally.

The normal pressure transfer module 20 may include a transfer frame 220 and a first transfer robot 240 . The transport frame 220 may be disposed between the load port 10 and the load lock chamber 40 . The load port 10 may be connected to the transport frame 220 . The inside of the transport frame 220 may be maintained in an atmospheric pressure atmosphere.

A transport rail 230 and a first transport robot 240 are positioned in the transport frame 220 . The longitudinal direction of the transport rail 230 and the longitudinal direction of the transport frame 220 may be horizontal. For example, the longitudinal direction of the transport rail 230 may be formed along the second direction 4 . A first transport robot 240 may be positioned on the transport rail 230 .

The first transport robot 240 transports the substrate W. The first transport robot 240 may transport the substrate W between the container F seated in the load port 10 and the load lock chamber 40 to be described later. The first transfer robot 240 may move forward and backward in the second direction 4 along the transfer rail 230 . The first transfer robot 240 may move in a vertical direction (eg, the third direction 6). The first transfer robot 240 has a first transfer hand 242 that moves forward, backward, or rotates on a horizontal plane. At least one first transfer hand 242 may be provided. A substrate W is placed on the first transfer hand 242 . A plurality of first transfer hands 242 may be spaced apart from each other in the third direction 6 .

The vacuum transfer module 30 may be disposed between the load lock chamber 40 and the process chamber 50 to be described later. The vacuum transfer module 30 may include a transfer chamber 320 and a second transfer robot 340 .

The inside of the transfer chamber 320 may be maintained in a vacuum pressure atmosphere. A second transfer robot 340 is disposed in the transfer chamber 320 . For example, the second transfer robot 340 may be disposed in the center of the transfer chamber 320 . The second transfer robot 340 transfers the substrate W between the load lock chamber 40 and the process chamber 50 to be described later. Also, the second transfer robot 340 transfers the substrate W between the process chambers 50 . The second transfer robot 340 may move in a vertical direction. The second transfer robot 340 has a second transfer hand 342 that moves forward, backward, or rotates on a horizontal plane. At least one second transfer hand 342 may be provided. A substrate W is placed on the second transfer hand 342 . A plurality of second transfer hands 342 may be spaced apart from each other in the third direction 6 .

At least one process chamber 50 to be described below is connected to the transfer chamber 320 . According to one embodiment, the transfer chamber 320 may be provided in a polygonal shape. A load lock chamber 40 and a process chamber 50 to be described later may be disposed around the transfer chamber 320 . Unlike the above, the shape of the transfer chamber 320 and the number of process chambers 50 may be variously modified according to user needs or process requirements.

The load lock chamber 40 may be disposed between the transfer frame 220 and the transfer chamber 320 . The load lock chamber 40 has a buffer space in which the substrates W are exchanged between the transport frame 220 and the transfer chamber 320 . For example, the substrate W on which a predetermined process has been completed in the process chamber 50 may temporarily stay in the load lock chamber 40 . In addition, the substrate W, which is taken out from the container F and is scheduled to undergo a predetermined process, may temporarily stay in the load lock chamber 40 .

As described above, the inside of the transfer frame 220 may be maintained in an atmospheric pressure atmosphere, and the inside of the transfer chamber 320 may be maintained in a vacuum pressure atmosphere. The load lock chamber 40 is disposed between the transport frame 220 and the transfer chamber 320 so that its internal atmosphere can be switched between atmospheric pressure and vacuum pressure.

A plurality of process chambers 50 may be provided. The process chamber 50 may be a chamber that performs a predetermined process on the substrate (W). According to an embodiment of the present invention, the process chamber 50 may process the substrate W using plasma. For example, the process chamber 50 may be a chamber for performing an etching process of removing a thin film on the substrate W using plasma, a deposition process of forming a thin film on the substrate W, or a dry cleaning process. there is. In addition, the process chamber 50 may be a chamber for performing an atomic layer deposition (ALD) process in which different types of gases are alternately supplied and an atomic layer is deposited on the substrate W using plasma. there is. However, it is not limited thereto, and the plasma treatment process performed in the process chamber 50 may be variously modified into a known plasma treatment process.

FIG. 2 is a diagram schematically illustrating a process chamber according to an exemplary embodiment of FIG. 1 . Referring to FIG. 2 , the process chamber 50 according to an embodiment may process a substrate W using plasma. For example, the process chamber 50 may simultaneously perform an atomic layer deposition process of depositing an atomic layer on the substrate W using plasma and an etching process of etching (removing) a specific film formed on the substrate W using plasma. can In the atomic layer deposition process according to an embodiment, a precursor is supplied and adsorbed on a substrate W, a self-limited reaction occurs after the precursor is supplied for a certain period of time, and then a purge step is performed. It may be a process of discharging the precursor and supplying a subsequent reaction gas to react with the precursor adsorbed on the substrate (W). In addition, in the process of supplying the subsequent reaction gas, some of it reacts with the precursor, but the other part is excited by plasma to etch a specific film formed on the substrate (W).

The process chamber 50 may include a housing 500 , a support unit 600 , a gas supply unit 700 , and a plasma source 900 .

The housing 500 has a processing space 501 . The processing space 501 may be a space in which the substrate W is processed. The housing 500 may have an open upper surface. For example, the housing 500 may have a cylindrical shape with an open upper surface. The open upper surface of the housing 500 may be sealed by a cover 550 to be described later. The processing space 501 may be maintained in a substantially vacuum atmosphere while processing the substrate W. The material of the housing 500 may include aluminum. Also, the housing 500 may be grounded.

According to one embodiment, a liner (not shown) may be disposed inside the housing 500 . The liner (not shown) may have a cylindrical shape with open upper and lower surfaces. A liner (not shown) may be disposed to face the inner wall of the housing 500 . The liner (not shown) may minimize damage to the inner wall of the housing 500 by plasma. Unlike the above example, a liner (not shown) may not be provided inside the housing 500 .

An opening (not shown) is formed in the side wall of the housing 500 . The opening (not shown) functions as a space in which the substrate W is carried into or taken out of the processing space 501 . The opening (not shown) may be selectively opened and closed by a door assembly (not shown).

An exhaust hole 510 is formed on the bottom surface of the housing 500 . The exhaust hole 510 is connected to the exhaust unit 520 . The exhaust unit 520 may adjust the pressure of the processing space 501 by exhausting the atmosphere of the processing space 501 . Also, the exhaust unit 520 may discharge process gas and impurities (byproduct) existing in the processing space 501 to the outside of the processing space 501 .

The exhaust unit 520 includes an exhaust line 522 and a pressure reducing member 524 . One end of the exhaust line 522 is connected to the exhaust hole 510 and the other end of the exhaust line 522 is connected to the pressure reducing member 524 . The pressure reducing member 524 may be a known device that applies negative pressure to the treatment space 501 .

An exhaust baffle 530 may be positioned above the exhaust hole 510 . The exhaust baffle 530 may be installed between a sidewall of the housing 500 and a support unit 600 to be described later. Also, when a liner (not shown) is provided inside the housing 500 , the exhaust baffle 530 may be installed between the liner (not shown) and the support unit 600 . When viewed from above, the exhaust baffle 530 may have a substantially ring shape. At least one baffle hole 532 may be formed in the exhaust baffle 530 . The baffle hole 532 may pass through upper and lower surfaces of the exhaust baffle 530 . Process gas and impurities existing in the processing space 501 may be discharged through the baffle hole 532 , the exhaust hole 510 , and the exhaust line 522 .

The insulating member 540 may be made of an insulating material. The insulating member 540 may have a substantially ring shape. The insulating member 540 may be provided on the upper side of the housing 500 . For example, the insulating member 540 may be disposed on the upper side of the housing 500 along the circumferential direction of the housing 500 . The insulating member 540 may be disposed between the housing 500 and a cover 550 to be described later.

The cover 550 is located on the upper side of the housing 500 . The cover 550 seals the open upper surface of the housing 500 . According to one embodiment, the cover 550 covers the open upper surface of the housing 500 to define a lower processing space 501 . The cover 550 is generally formed in a plate shape. For example, the cover 550 may be formed in a disk shape. The cover 550 may include a dielectric substance window. A groove may be formed in a central portion including the center of the cover 550 . Grooves formed in the cover 550 may be formed stepwise. The groove formed in the central portion of the cover 550 may pass through upper and lower surfaces of the cover 550 . A first nozzle member 710 to be described later is inserted into the groove formed in the central portion of the cover 550 .

The support unit 600 is located within the processing space 501 . According to one embodiment, the support unit 600 supports the substrate W in the processing space 501 . The support unit 600 may include an electrostatic chuck (ESC) that adsorbs the substrate W using electrostatic force. Alternatively, the support unit 600 may support the substrate W in various ways such as a vacuum adsorption method or a mechanical clamping method. Hereinafter, the support unit 600 including the electrostatic chuck (ESC) will be described as an example.

The support unit 600 may include an electrostatic chuck 610 and an insulating plate 650 . The electrostatic chuck 610 supports the substrate W. The electrostatic chuck 610 may include a dielectric plate 620 and a base plate 630 .

The dielectric plate 620 is positioned above the support unit 600 . A substrate W is placed on the upper surface of the dielectric plate 620 . When the substrate W is placed on the upper surface of the dielectric plate 620 , an edge area of the substrate W may be located outside the dielectric plate 620 . According to one embodiment, the dielectric plate 620 may be formed in a disk shape. According to an example, the dielectric plate 620 may have a smaller diameter than the substrate W. According to one example, the dielectric plate 620 may be a dielectric.

An electrode 622 may be positioned inside the dielectric plate 620 . According to one example, the electrode 622 may be buried inside the dielectric plate 620 . The electrode 622 is electrically connected to the first power source 624 . The first power source 624 may include DC power. A first switch 626 may be installed in the first power source 624 . The electrode 622 may be electrically connected to or disconnected from the first power source 624 by turning on/off of the first switch 626 . When the first switch 626 is turned on, a direct current flows through the electrode 622 . An electrostatic force acts between the electrode 622 and the substrate W by the current flowing through the electrode 622 . Accordingly, the substrate W is adsorbed to the dielectric plate 620 by the electrostatic force.

In addition, a heater (not shown) may be disposed inside the dielectric plate 620 . A heater (not shown) disposed inside the dielectric plate 620 may be positioned below the electrode 622 . The heater (not shown) may include a spiral coil. A heater (not shown) transfers heat to the dielectric plate 620, and the heat transferred to the dielectric plate 620 may be transferred to the substrate W. However, unlike the above-described example, a heater (not shown) may not be disposed inside the dielectric plate 620 .

The base plate 630 is positioned below the dielectric plate 620 . According to one embodiment, the base plate 630 may have a disk shape. The upper surface of the base plate 630 may be formed to be stepped so that the central region is located relatively higher than the edge region. A central region of the upper surface of the base plate 630 may have an area corresponding to that of the lower surface of the dielectric plate 620 . A central region of the top surface of the base plate 630 may be bonded to the bottom surface of the dielectric plate 620 by an adhesive layer (not shown). A ring member 640 to be described later may be positioned above the edge region of the upper surface of the base plate 630 .

The base plate 630 may include a material having excellent heat and electrical conductivity. According to one example, the base plate 630 may include a metal plate. According to one example, the entirety of the base plate 630 may be made of a metal material. For example, the material of the base plate 630 may include aluminum.

The base plate 630 may be electrically connected to the second power source 630a. A second switch 630b may be installed in the second power source 630a. The base plate 630 may be electrically connected to or disconnected from the second power source 630b by turning on/off the second switch 630b. The second power source 630a may be a low frequency power source that generates low frequency power. The second power source 630a may apply low-frequency power to the base plate 630 . The base plate 630 may receive low-frequency power from the second power source 630a to improve the fluidity of the plasma formed in the processing space 501 . According to an embodiment, the base plate 630 may receive low-frequency power to improve straightness or drawing-in property of plasma generated in the processing space 501 . For example, when low-frequency power is applied to the base plate 630 , the plasma present in the processing space 501 may move toward the upper surface of the substrate W with linearity. However, unlike the above-described example, low-frequency power may not be applied to the base plate 630 .

A cooling passage 632 may be formed inside the base plate 630 . The cooling passage 632 functions as a passage through which cooling fluid circulates. According to one embodiment, the cooling fluid may include cooling water. According to one embodiment, the cooling passage 632 may be formed of a single passage. Also, the cooling passage 632 may be formed in a spiral shape.

Optionally, the cooling passage 632 may include a plurality of passages. For example, the plurality of passages may be formed in a ring shape having different radii while sharing the center of the base plate 630 inside the base plate 630 . The plurality of flow passages may be in fluid communication with each other. Also, the plurality of passages may be positioned at the same height as each other.

The cooling passage 632 is connected to the cooling fluid storage unit 636 through a cooling fluid supply line 634 . Cooling fluid is stored in the cooling fluid storage unit 363 . A cooler 638 may be located inside the cooling fluid storage unit 636 . The cooler 638 may cool the cooling fluid stored in the cooling fluid storage unit 636 to a predetermined temperature. Unlike the above, the cooler 638 may be installed in the cooling fluid supply line 634 . The cooling fluid may circulate along the cooling passage 632 and cool the base plate 630 . The dielectric plate 620 and the substrate W may be cooled together by the cooled base plate 630 . Thus, the substrate W can be maintained at a desired temperature.

Although not shown, a heat transfer channel (not shown) may be formed inside the base plate 630 . A heat transfer channel (not shown) may supply a heat transfer medium to the lower surface of the substrate (W). The heat transfer medium may be a fluid supplied to the lower surface of the substrate (W) in order to solve the temperature non-uniformity of the substrate (W) while the substrate (W) is processed using plasma. According to one example, the heat transfer medium may be helium (He) gas.

The ring member 640 is disposed on an edge region of the electrostatic chuck 610 . The ring member 640 has a ring shape. A ring member 640 is disposed along the circumference of the dielectric plate 620 . The upper surface of the ring member 640 may be formed stepwise so that the outer portion is higher than the inner portion. A top surface of the inner portion of the ring member 640 may be positioned at the same height as a top surface of the dielectric plate 620 . An upper surface of the inner portion of the ring member 640 may support a lower edge of the substrate W positioned outside the dielectric plate 620 . An outer portion of the ring member 640 may surround a side portion of the substrate W. According to one example, the ring member 640 may be a focus ring.

An insulating plate 650 is positioned below the base plate 630 . The insulating plate 650 may include an insulating material. The insulating plate 650 electrically insulates the base plate 630 from the housing 500 . When viewed from above, the insulating plate 650 may be formed in a circular plate shape. Upper and lower surfaces of the insulating plate 650 may have areas corresponding to those of the bottom surface of the base plate 630 .

The gas supply unit 700 supplies gas to the processing space 501 . The gas supplied to the processing space 501 may include a first gas, a second gas, and a third gas. A detailed description of this will be given later.

The gas supply unit 700 may include nozzle members 710 and 720 , a first gas supply unit 810 , a second gas supply unit 820 , and a third gas supply unit 830 .

The nozzle member may include a first nozzle member 710 and a second nozzle member 720 . The first nozzle member 710 injects gas from the upper side of the processing space 501 . The second nozzle member 720 injects gas from the side of the processing space 501 .

The first nozzle member 710 injects gas into the processing space 501 . Specifically, the first nozzle member 710 supplies different gases supplied from each of the first gas supply unit 810, the second gas supply unit 820, and the third gas supply unit 830 to the processing space 501. can be sprayed with The first nozzle member 710 may be installed on the cover 550 . For example, the first nozzle member 710 may be inserted into a groove formed in the central portion of the cover 550 . Accordingly, the first nozzle member 710 may inject different gases into the processing space 501 from the upper side of the processing space 501 .

FIG. 3 is a view viewed from the top of a state in which a second nozzle member according to an embodiment of FIG. 2 is disposed. FIG. 4 is a longitudinal cross-sectional view of part A of FIG. 2, schematically showing a second nozzle member according to an exemplary embodiment. Hereinafter, a second nozzle member according to an embodiment of the present invention will be described in detail with reference to FIGS. 2 to 4 . However, in FIG. 3 , the exhaust baffle 530 according to an embodiment of the present invention is omitted for convenience of understanding.

The second nozzle member 720 injects gas into the processing space 501 . Specifically, the second nozzle member 720 receives different gases from each of the first gas supply unit 810, the second gas supply unit 820, and the third gas supply unit 830, which will be described later, and receives different gases supplied from each other. Gases may be injected into the processing space 501 .

The second nozzle member 720 may be installed on a sidewall of the housing 500 . The second nozzle member 720 may be positioned above the substrate W supported by the support unit 600 . A part of the second nozzle member 720 may protrude into the processing space 501 . In addition, a plurality of second nozzle members 720 may be installed on the sidewall of the housing 500 . As shown in FIG. 3 , the plurality of second nozzle members 720 according to one embodiment may be disposed spaced apart from each other along the circumferential direction of the sidewall of the housing 500 . Accordingly, the plurality of second nozzle members 720 may inject different gases into the processing space 501 from the side of the processing space 501 .

Some of the second nozzle members 720 may be connected to a first gas line 814 to be described later. A second gas line 824 to be described below may be connected to another part of the second nozzle members 720 . In addition, the second nozzle member 720 to which the first gas line 814 is connected and the second nozzle member 720 to which the second gas line 824 is connected are alternately disposed along the circumferential direction of the sidewall of the housing 100. It can be. For example, the second gas line 824 may be connected to the second nozzle member 720 disposed closest to the second nozzle member 720 to which the first gas line 814 is connected.

The second nozzle member 720 may include a feeding housing 730, a feeding tube 740, a connecting part 750, and a driving part 760.

The feeding housing 730 has an inner space 732. A feeding tube 740 to be described later is located in the inner space 732 . Also, the inner space 732 may function as a passage through which gas flows. For example, a first gas, a second gas, and a third gas to be described later may flow in the inner space 732 .

The feeding housing 730 may be disposed on a sidewall of the housing 500 . According to one embodiment, a portion of the feeding housing 730 may be disposed outside the sidewall of the housing 500 and another portion of the feeding housing 730 may be disposed to protrude into the processing space 501 . However, it is not limited thereto, and a portion of the feeding housing 730 may be disposed inside the sidewall of the housing 500, and another portion of the feeding housing 730 may be disposed protruding into the processing space 501.

According to one embodiment, the feeding housing 730 may have a longitudinal direction parallel to the ground. According to one embodiment, the feeding housing 730 may have a square cross section. However, it is not limited thereto, and may have cross sections of various shapes such as circular. A first injection hole 734 and a second injection hole 736 may be formed in the feeding housing 730 .

The first injection hole 734 may be formed at the front end of the feeding housing 730 . The first injection hole 734 may be in fluid communication with the inner space 732 . According to one embodiment, the first spray hole 734 may be formed in a portion of the feeding housing 730 protruding into the processing space 501 . Accordingly, the first injection hole 734 may be located within the processing space 501 . The first injection hole 734 may be in fluid communication with the processing space 501 .

According to one embodiment, the first injection hole 734 may be formed to be inclined. The first injection hole 734 may be inclined in a direction toward the substrate W supported by the support unit 600 . That is, the first injection hole 734 may be formed to be inclined downward in a direction toward the substrate W supported by the support unit 600 . For example, the first spray hole 734 may be inclined at a first angle with respect to the ground.

The second injection hole 736 may be formed at the lower end of the feeding housing 730 . The second injection hole 736 may be formed in a portion of the feeding housing 730 protruding into the processing space 501 . For example, when viewed from the side, the second injection hole 736 may be formed at a position adjacent to the front end of the feeding housing 730 in the entire lower area of the feeding housing 730 . Accordingly, the second spray hole 736 may be located within the processing space 501 and may be in fluid communication with the processing space 501 . Also, the second spray hole 736 may be in fluid communication with the inner space 732 . Accordingly, the second spray hole 736 may bring the inner space 732 and the processing space 501 into fluid communication with each other.

According to one embodiment, the second spray hole 736 may be formed to be inclined. The second spray hole 736 may be formed to be inclined downward in a direction toward the substrate W supported by the support unit 600 . For example, the second spray hole 736 may be inclined at a second angle with respect to the ground. Here, the second angle may be relatively greater than the first angle of the first spray hole 734 . That is, the first angle may be a gentler slope relative to the ground than the second angle.

A sealing member 738 may be disposed in the inner space 732 . The sealing member 738 may have a ring shape. The sealing member 738 may be disposed to surround the circumference of the first spray hole 734 in the inner space 732 . The sealing member 738 may include a material such as rubber or PEEK. As will be described later, the sealing member 738 prevents gas supplied from the feeding tube 740 from flowing into the inner space 732 when the driving unit 760 positions the feeding tube 740 at the first injection position. prevent.

According to one embodiment, the feeding tube 740 may be a hollow tube. The hollow formed in the feeding tube 740 functions as a path through which gas flows. The feeding tube 740 is located in the inner space 732 of the feeding housing 730 . In addition, the feeding tube 740 may move forward and backward in the inner space 732 by a driving unit 760 to be described later. A longitudinal direction of the feeding tube 740 may be parallel to a longitudinal direction of the feeding housing 730 .

One end of the feeding tube 740 may be connected to a first gas line 814 to be described later. In addition, one end of the feeding tube 740 may be connected to a second gas line 824 to be described later. Accordingly, the first gas and/or the second gas may be supplied to the hollow formed in the feeding tube 740 .

The other end of the feeding tube 740 may face the first injection hole 734 . A feeding hole 742 is formed at the other end of the feeding tube 740 . When viewing the feeding tube 740 from the front, the feeding hole 742 may be disposed at a position overlapping the first spray hole 734 . Also, when viewing the feeding tube 740 from the front, the feeding hole 742 may be disposed at a position covering the first spray hole 734 . The feeding hole 742 may be in fluid communication with the first injection hole 734 . Specifically, the feeding hole 742 may be in fluid communication with the first injection hole 734 when the feeding tube 740 is located at a first injection position to be described later. Also, feeding hole 742 can be in fluid communication with interior space 732 . Specifically, the feeding hole 742 may be in fluid communication with the inner space 732 when the feeding tube 740 is located at a second injection position to be described later.

The connection part 750 may be connected to the feeding tube 740 . A first gas line 814 or a second gas line 824 to be described later is disposed inside the connection unit 750 . Accordingly, the first gas line 814 or the second gas line 824 may be connected to one end of the feeding tube 740 through the connection part 750 .

The driving unit 760 may be connected to the connection unit 750 . Accordingly, the driving unit 760 may be connected to the feeding tube 740 through the connection unit 750 . The driving unit 760 transmits driving force to the feeding tube 740 . For example, the driving unit 760 may move the feeding tube 740 forward and backward. According to one embodiment, the driving unit 760 may move the feeding tube 740 between a first injection position and a second injection position. The driving unit 760 may be a known device that transmits driving force. For example, the driving unit 760 may be changed to various devices such as a hydraulic cylinder or a motor.

5 is a longitudinal cross-sectional view schematically showing a state when the feeding tube according to the embodiment of FIG. 4 is positioned at a second injection position. 4 shows a state when the feeding tube according to an embodiment of the present invention is located in the first injection position, hereinafter, referring to FIGS. 4 and 5, the feeding tube 740 according to an embodiment of the present invention ) is explained in detail about the movement mechanism.

Referring to FIG. 4 , the first injection position means that the driving unit 760 moves the feeding tube 740 forward so that the feeding hole 742 is the first injection hole 734 and the second injection hole 736. It may be a position in fluid communication with the first injection hole 734 . Also, when the feeding tube 740 is positioned at the first injection position, the feeding hole 742 may not be in fluid communication with the inner space 732 . When the feeding tube 740 is positioned at the first injection position, the other end of the feeding tube 740 having the feeding hole 742 may come into contact with the ring member 738 . Thus, the hollow formed in the feeding tube 740 may be sealed from the inner space 732 .

Referring to FIG. 5 , the second injection position means that the driving unit 760 moves the feeding tube 740 backward so that the feeding hole 742 is in contact with both the first injection hole 734 and the second injection hole 736. It may be a location in fluid communication. When the feeding tube 740 is positioned at the second injection position, the other end of the feeding tube 740 having the feeding hole 742 may be spaced apart from the ring member 738 . That is, when the feeding tube 740 is positioned at the second spraying position, the other end of the feeding tube 740 where the feeding hole 742 is formed may not come into contact with the ring member 738 . Thus, the hollow formed in the feeding tube 740 may be in fluid communication with the inner space 732 .

Referring back to FIG. 2 , the first gas supplier 810 supplies the first gas. The first gas supply unit 810 may supply the first gas to the processing space 501 via the first nozzle member 710 and the second nozzle member 720 . The first gas supply unit 810 may include a first gas source 812 , a first gas line 814 , and a first valve 816 .

The first gas source 812 stores a first gas. According to an embodiment, the first gas may be a gas adsorbed on the surface of the substrate W supported by the support unit 600 . For example, the first gas may be a precursor used in an atomic layer deposition process. That is, the first gas may be a gas adsorbed on the surface of the substrate W to cause a self-limited reaction.

The first gas line 814 (solid line in FIG. 2 ) is connected to the first gas source 812 . The first gas line 814 connected to the first gas source 812 may be branched and connected to the first nozzle member 710 and the second nozzle member 720, respectively. For example, as shown in FIG. 4 , the first gas line 814 may be connected to one end of the feeding tube 740 . First valves 816a and 816b may be installed in the first gas line 814 . The first valves 816a and 816b may be on/off valves. Optionally, the first valves 816a and 816b may be flow control valves.

The second gas supply unit 820 supplies a second gas. The second gas supply unit 820 may supply the second gas to the processing space 501 through the first nozzle member 710 and the second nozzle member 720 . The second gas supply unit 820 may include a second gas source 822 , a second gas line 824 , and a second valve 826 .

The second gas source 822 stores a second gas. According to an embodiment, the second gas may be a gas that reacts with the first gas adsorbed on the surface of the substrate (W). For example, the second gas may be a gas that deposits a thin film on the substrate (W) by reacting with the first gas adsorbed on the surface of the substrate (W). That is, the second gas may be a gas that reacts with the first gas. Also, the second gas may be a gas excited in the processing space 501 and etching a specific film formed on the substrate W.

The second gas line 824 (dotted line in FIG. 2 ) is connected to the second gas source 822 . The second gas line 824 connected to the second gas source 822 may be branched and connected to the first nozzle member 710 and the second nozzle member 720 , respectively. For example, the second gas line 824 may be connected to one end of the feeding tube 740 . Some of the feeding tubes 740 may be connected to the first gas line 814 , and another part of the feeding tubes 740 may be connected to the second gas line 824 . That is, the second gas line 824 may not be connected to the feeding tube 740 to which the first gas line 814 is connected. A second valve 826 may be installed in the second gas line 824 . Since the second valve 826 has the same or similar structure as the first valve 816 described above, duplicate description thereof will be omitted.

The third gas supply unit 830 supplies a third gas. The third gas supply unit 830 may supply the third gas to the processing space 501 via the first nozzle member 710 and the second nozzle member 720 . Also, the third gas supply unit 830 may supply the third gas to the processing space 501 via the second gas supply unit 820 . The third gas supply unit 830 may include a third gas source 832 , a third gas line 834 , and a third valve 836 .

The third gas source 832 stores a third gas. According to an embodiment, the third gas may be a gas that contributes to igniting plasma generated in the processing space 501 . That is, the third gas may be a gas that contributes to the excitation of the second gas by the electric field generated in the processing space 501 . Also, the third gas source 832 may be a gas for purging the processing space 501 . Also, the third gas source 832 may function as a carrier gas. According to one embodiment, the third gas source 832 may include an inert gas. Also, the third gas may be a gas that does not react with the second gas.

The third gas line 834 (double-dashed line in FIG. 2 ) is connected to the third gas source 832 . The third gas line 834 connected to the third gas source 832 may be branched and connected to the second gas line 824 . Specifically, one of the branched third gas lines 834 is connected to the second gas line 824 connected to the first nozzle member 710, and the other of the branched third gas lines 834 is connected to the first nozzle member 710. It may be connected to the second gas line 824 connected to the two-nozzle member 720 . Third valves 836a and 836b may be installed in the third gas line 834 . Since the third valves 836a and 836b have the same or similar structure as the first valve 816 described above, overlapping descriptions thereof will be omitted.

The plasma source 900 excites the gas supplied to the processing space 501 into a plasma state. For example, the plasma source 900 may excite the second gas supplied to the processing space 501 into a plasma state. The plasma source 900 according to an embodiment of the present invention may use an inductively coupled plasma (ICP). However, it is not limited thereto, and the plasma source 900 may be modified and used with various devices capable of generating plasma, such as capacitively coupled plasma (CCP) and microwave plasma. Hereinafter, a case in which inductively coupled plasma (ICP) is used as the plasma source 900 will be described as an example.

The plasma source 900 may include an antenna housing 910 , a plasma power source 920 , and an antenna 930 . The antenna housing 910 may be formed in a substantially cylindrical shape. According to one embodiment, the antenna housing 910 may have a cylindrical shape with an open bottom. The antenna housing 910 may have a diameter corresponding to that of the housing 500 . The antenna housing 910 may be disposed above the housing 500 . Also, the antenna housing 910 may be disposed above the cover 550 . According to one embodiment, the lower end of the antenna housing 910 can be detached from the cover 550 . The antenna housing 910 has an inner space. An antenna 930 to be described later is disposed in the inner space of the antenna housing 910 .

The plasma power source 920 may be located outside the process chamber 50 . The plasma power source 920 may apply high-frequency power to an antenna 930 to be described later. According to an embodiment, the plasma power source 920 may be an RF power source. An end of the power line to which the plasma power source 920 is connected may be grounded. An impedance matcher (not shown) may be installed in the power line.

The antenna 930 may include a spiral coil wound with multiple circuits. The coil may be disposed at a position facing the substrate (W). For example, when viewed from above, the coil may be disposed at a position overlapping the substrate W supported by the support unit 600 . The coil is connected to the plasma power source 920 and receives power from the plasma power source 920 . According to an embodiment, the coil may induce a time-varying electric field in the processing space 501 by receiving high-frequency power from the plasma power supply 920 . Accordingly, the gas supplied to the processing space 501 may be excited into plasma. For example, the second gas supplied to the processing space 501 may be excited into plasma.

FIG. 6 is a longitudinal cross-sectional view schematically illustrating a gas flow when the feeding tube according to the embodiment of FIG. 4 is positioned at a first injection position. FIG. 7 is a longitudinal cross-sectional view schematically illustrating a gas flow when the feeding tube according to the exemplary embodiment of FIG. 4 is positioned at a second injection position.

Hereinafter, an example of supplying gas from the second nozzle member 720 to the processing space 501 according to an embodiment of the present invention will be described in detail with reference to FIGS. 6 and 7 . Hereinafter, for convenience of explanation, supplying the first gas to the processing space 501 through the second nozzle member 720 will be described as an example.

The second nozzle member 720 according to an embodiment of the present invention supplies the first gas G1 to the processing space 501 . As described above, the driving unit 760 moves the feeding tube 740 to the first injection position. As shown in FIG. 6, when the feeding tube 740 is located at the first injection position, the first gas line 814 connected to one end of the feeding tube 740 is hollow formed in the feeding tube 740, and the first gas line 814 is hollow. Gas G1 can be supplied. The first gas G1 supplied to the hollow formed in the feeding tube 740 passes through the feeding hole 742 and is supplied to the first injection hole 734 . Accordingly, the first gas G1 may be injected into the processing space 501 from the first injection hole 734 .

The driving unit 760 moves the feeding tube 740 to the second injection position. As shown in FIG. 7 , when the feeding tube 740 is located at the second injection position, the first gas line 814 connected to one end of the feeding tube 740 sends the first gas G1 to the feeding tube 740. ) can be supplied. The first gas G1 supplied to the hollow formed in the feeding tube 740 passes through the feeding hole 742 and is supplied to the inner space 732 . The first gas G1 supplied to the inner space 732 flows into the first injection hole 734 and the second injection hole 736 . Accordingly, the first gas G1 may be injected into the processing space 501 from each of the first injection hole 734 and the second injection hole 736 .

In addition, the first gas G1 injected from the second injection hole 736 into the processing space 501 has a direction different from that of the first gas G1 injected from the first injection hole 734 into the processing space 501 . can be directed to For example, the first gas G1 injected from the second injection hole 736 may be directed toward a lower region of the processing space 501 than the first gas G1 injected from the first injection hole 734 .

According to the above-described embodiment of the present invention, when supplying gas to the processing space 501, the gas may be differently supplied to different regions using one structure. For example, when the gas is injected into the processing space 501 through the first injection hole 734 by moving the feeding tube 740 to the first injection position, even if the same amount of gas is supplied, the feeding tube 740 The density of the gas may be higher in a specific area within the processing space 501 than when it is located at the second injection position. In particular, even when the pressure in the processing space 501 is high, the uniformity of the gas in the processing space 501 may be secured by supplying the gas through the first injection hole 734 . In particular, since the molecular weight of the first gas, which is a precursor used in the atomic layer deposition process, is relatively greater than that of the second gas, when the first gas is supplied to the processing space 501, the feeding tube 740 is moved to the first injection position. fluidity of the first gas in the processing space 501 may be improved.

In addition, according to one embodiment of the present invention described above, by moving the feeding tube 740 to the second injection position, the treatment space 501 is provided through the first injection hole 734 and the second injection hole 736, respectively. gas can be injected. Thus, the gas may be evenly distributed over a wide area within the processing space 501 . In particular, since some of the second gas used in the atomic layer deposition process needs to be excited into plasma by an electric field formed in the processing space 501 and the other part needs to react with the first gas adsorbed on the substrate, the second gas It is desirable to distribute the gas widely within the process space 501 . Accordingly, when supplying the second gas into the processing space 501, the feeding tube 740 may be moved to the second injection position.

However, it is not limited to the above example, and the flowability of the gas in the processing space 501, the density of the gas in the processing space 501, and the gas in the processing space 501 are measured by simply changing the position of the feeding tube 740. The characteristics of the gas in the processing space 501 may be adjusted according to various process requirements such as distribution.

In the above example, when the feeding tube 740 is located at the first injection position or the second injection position, the first gas line 814 supplies the first gas G1 to the hollow formed in the feeding tube 740. has been described as an example, but this is simply for convenience of understanding. For example, the first gas line 814 can continuously supply the first gas G1 to the feeding tube 740 even while the feeding tube 740 moves between the first injection position and the second injection position. am.

In addition, in the above example, the third gas line 834 is connected to the second gas line 824 as an example, but is not limited thereto. For example, the third gas line 834 may be directly connected to the first nozzle member 710 and the second nozzle member 720 . In this case, the third gas line 834 may be connected to the second nozzle member 720 to which the first gas line 814 and the second gas line 824 are not connected among the second nozzle members 720. .

In addition, in the above example, the process chamber 60 has been described as an example of performing an atomic layer deposition process, but is not limited thereto. For example, it may be equally or similarly applied to various processes of processing a substrate using plasma. In addition, it can be equally or similarly applied to various processes of processing a substrate by supplying gas without using plasma.

Hereinafter, a modified embodiment of the present invention will be described. Hereinafter, description of overlapping configurations will be omitted, except for the case of additional description.

8 is a longitudinal cross-sectional view schematically showing a state when the feeding tube according to another embodiment of FIG. 4 is located in a third position.

Referring to FIG. 8 , the driving unit 760 according to an embodiment of the present invention may move the feeding tube 740 to the third injection position. The third injection position may be between the first injection position and the second injection position. According to one embodiment, the third injection position may be a position where the other end of the feeding tube 740 overlaps the second injection hole 736 when viewed from above. Also, the third injection position may be a position where the feeding hole 742 overlaps the second injection hole 736 when viewed from above.

According to one embodiment of the present invention described above, the gas supplied to the hollow formed in the feeding tube 740 may be supplied to the first injection hole 734 and the second injection hole 736 through the inner space 732. there is. In one embodiment of the present invention, compared to the example described with reference to FIG. 7 , the amount of gas flowing into the second spray hole 736 may be relatively small. According to one embodiment of the present invention, the amount of gas supplied to the second injection hole 736 can be efficiently adjusted by changing the position of the feeding tube 740 .

FIG. 9 is a longitudinal cross-sectional view of part A of FIG. 2, schematically showing a second nozzle member according to another embodiment.

Referring to FIG. 9 , the first spray hole 734 and the second spray hole 736 may not be inclined. According to one embodiment, the first injection hole 734 may be formed in a direction parallel to the longitudinal direction of the feeding housing 730 . For example, the first spray hole 734 may be formed in a direction parallel to the ground. Also, the second spray hole 736 may be formed in a direction perpendicular to the ground. In this case, straightness of gases passing through the first injection hole 734 and the second injection hole 736 may be improved.

FIG. 10 is a view schematically showing a front view of a second nozzle member according to another embodiment of FIG. 2 . FIG. 11 is a view schematically showing a second nozzle member according to another embodiment of FIG. 10 viewed from below.

Referring to FIGS. 10 and 11 , a plurality of first injection holes 734 and second injection holes 736 may be formed in the feeding housing 730 . For example, two first injection holes 734 may be formed at the front end of the feeding housing 730 . In addition, two second injection holes 736 may be formed at the lower end of the feeding housing 730 . However, it is not limited thereto, and the first injection hole 734 and the second injection hole 736 may be formed with a natural number of 3 or more.

The above detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and describe preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed in this specification, within the scope equivalent to the written disclosure and / or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in the specific application field and use of the present invention are also possible. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to cover other embodiments as well.

10: load port
20: normal pressure transfer module
30: vacuum transfer module
40: load lock chamber
50: process chamber
500: housing
600: support unit
700: gas supply unit
710: first nozzle member
720: second nozzle member
730: feeding housing
732: inner space
734: first injection hole
736: second injection hole
738: sealing member
740: feeding tube
742: feeding hole
760: driving unit
810: first gas supply unit
820: second gas supply unit
830: third gas supply unit

Claims (18)

In the apparatus for processing the substrate,
a housing having a processing space therein;
a support unit supporting a substrate in the processing space; and
A gas supply unit supplying gas to the processing space,
The gas supply unit includes a nozzle member connected to a gas line to inject gas into the processing space;
The nozzle member,
The substrate processing apparatus according to claim 1 , wherein the gas is supplied to the processing space at a first angle toward the substrate supported by the support unit and at a second angle different from the first angle. According to claim 1,
The nozzle member,
a feeding housing having an inner space and having a spray hole communicating with the processing space;
a feeding tube located in the inner space and having a feeding hole in fluid communication with the inner space; and
A substrate processing apparatus comprising a driving unit for moving the feeding tube in the inner space. According to claim 2,
The injection hole includes a first injection hole and a second injection hole,
The first injection hole is formed inclined at the first angle at the front end of the feeding housing,
The second injection hole is formed to be inclined at the second angle at the lower end of the feeding housing. According to claim 3,
The gas line is connected to one end of the feeding tube,
The feeding hole is formed at the other end of the feeding tube facing the first injection hole. According to claim 4,
A substrate processing apparatus in which a sealing member surrounding the first injection hole is installed in the inner space. According to claim 5,
The drive unit moves the feeding tube between a first injection position and a second injection position,
The first injection location is
A position where the feeding tube advances and the other end of the feeding tube comes into contact with the sealing member;
The second injection position is
The substrate processing apparatus, characterized in that the feeding tube moves backward so that the other end of the feeding tube is spaced apart from the sealing member. According to claim 3,
The first injection hole and the second injection hole are disposed to protrude from a sidewall of the housing toward the processing space. According to any one of claims 2 to 7,
The nozzle member,
A plurality of substrate processing apparatuses installed on the sidewall of the housing along the circumferential direction of the housing. According to any one of claims 2 to 7,
Some of the plurality of nozzle members are connected to a first gas line for supplying a first gas,
Another part of the plurality of nozzle members is connected to a second gas line for supplying a second gas different from the first gas. According to claim 9,
A nozzle member connected to the first gas line and a nozzle member connected to the second gas line are alternately disposed along a circumferential direction of the housing. According to claim 10,
The first gas is a gas adsorbed on the surface of the substrate,
The substrate processing apparatus of claim 1, wherein the second gas reacts with the first gas or is excited in the processing space to etch a film formed on the substrate. A gas supply unit for supplying gas to a processing space through a nozzle member,
The nozzle member,
a feeding housing having an inner space and having a spray hole communicating with the processing space;
a feeding tube located in the inner space and having a feeding hole in fluid communication with the inner space; and
And a driving unit for moving the feeding tube in the inner space,
The gas supply unit of claim 1 , wherein the gas is supplied to the processing space through the injection hole at a first angle toward the substrate positioned in the processing space and at a second angle different from the first angle. According to claim 12,
The injection hole includes a first injection hole and a second injection hole,
The first injection hole is formed to be inclined downward at the first angle at the front end of the feeding housing,
The second injection hole is formed to be inclined downward at the second angle at the lower end of the feeding housing. According to claim 13,
One end of the feeding tube is connected to a gas line for supplying the gas,
The feeding hole is formed at the other end of the feeding tube facing the first injection hole. According to claim 14,
The drive unit moves the feeding tube between a first injection position and a second injection position,
The first injection location is
The feeding tube is moved forward so that the feeding hole is in fluid communication with the first injection hole of the first injection hole and the second injection hole,
The second injection position is
The gas supply unit according to claim 1 , wherein the feeding tube moves backward, and the feeding hole is in fluid communication with the first injection hole and the second injection hole, respectively. According to claim 13,
A gas supply unit in which a sealing member surrounding the first injection hole is installed in the inner space. According to any one of claims 12 to 16,
The nozzle member is installed in plural along a circumferential direction of a sidewall of the housing defining the processing space,
Some of the plurality of nozzle members are connected to a first gas line for supplying a first gas,
Another part of the plurality of nozzle members is connected to a second gas line for supplying a second gas different from the first gas. According to claim 17,
The first gas is a gas adsorbed on the surface of the substrate,
The gas supply unit of claim 1, wherein the second gas reacts with the first gas or is excited in the processing space to etch a film formed on the substrate.

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