KR20230079848A - Composition for semiconductor encapsulation and semiconductor parts molded therefrom - Google Patents

Abstract

A composition for encapsulating semiconductors is provided. According to this, high heat dissipation characteristics and very high mechanical strength can be obtained. In addition, due to sufficient fluidity, it is excellent in filling even in a narrow space, and the semiconductor device is warped due to external force applied before and after molding and when mounted on a circuit board and/or stress due to vaporization of internal moisture due to high heat. , it is possible to minimize or prevent damage such as cracks and peeling of the molded sealing material. Furthermore, the moisture resistance can be significantly improved by effectively blocking moisture penetrating from the outside.

Description

Composition for semiconductor encapsulation and semiconductor parts molded therethrough {Composition for semiconductor encapsulation and semiconductor parts molded therefrom}

The present invention relates to a composition for encapsulating a semiconductor and a semiconductor part molded therefrom.

Semiconductor encapsulants are used to protect semiconductor devices such as integrated circuits (ICs), large scale ICs (LSI), and very large scale ICs (VLSI) from external shock, vibration, moisture, radiation, and the like. Prior to the development of epoxy molding compound (EMC), semiconductors were sealed with metal or ceramic, but composite materials using epoxy resin, which is easy to mold and economical, were introduced from the late 1960s, and then responded to the rapid development of the semiconductor industry. The development of materials related to composite materials for sealing semiconductor devices has also developed rapidly.

The main role of the semiconductor encapsulant is to protect the semiconductor chip from the external environment, achieve electrical insulation from the external environment, effectively dissipate heat generated during operation of the device, and provide the convenience of surface mounting. However, recently, while miniaturization and high functionality of electronic devices are in progress, semiconductor packages mounted therein are also highly functional, and the processing speed of semiconductor elements inside the semiconductor package is being accelerated.

Such high-speed processing of semiconductor devices causes and intensifies the problem of heat generation on the surface of semiconductor devices, and when heat is not efficiently dispersed and dissipated, problems such as deterioration, malfunction, and shortening of product life are occurring.

In particular, recently, the demand for high heat dissipation materials is rapidly increasing, centering on power devices such as portable devices, LEDs, and automobiles. Although the composition is being developed, the flowability and dispersibility due to the high content of the filler are lowered, which causes a problem in that the filling ability of the encapsulant composition is lowered in a very narrow and narrow space. In addition, there is also a problem of damaging the wire-bonded wiring of the semiconductor package when the high-viscosity encapsulant composition is filled.

Accordingly, there is an urgent need to develop a composition for semiconductor encapsulation that can achieve both high heat dissipation and fluidity, prevent damage to an object to be encapsulated, such as wire bonded wires of a semiconductor package, and is suitable for an encapsulant of a thinned semiconductor device.

Republic of Korea Patent Publication No. 1991-0007095

The present invention was devised in view of the above points, and has high heat dissipation characteristics, excellent fluidity, excellent filling even in a narrow and narrow space, and external force applied before and after molding and when mounting on a circuit board. It is an object of the present invention to provide a composition for encapsulating semiconductors in which damage such as warpage of a semiconductor device and cracking and peeling of a molded encapsulant due to stress due to vaporization of internal moisture due to high heat is minimized.

The present invention was devised in view of the above points, and a molding component including an epoxy resin and a curing agent, a spherical first alumina having an average particle diameter of 1 to 45 μm and a maximum particle diameter of 75 μm or less, and a plate-shaped agent Provided is a composition for semiconductor encapsulation comprising an inorganic filler containing 2 alumina.

According to one embodiment of the present invention, the epoxy resin may be a biphenyl-based epoxy resin.

In addition, the inorganic filler may be provided in 80 to 95% by weight based on the total weight of the composition for semiconductor encapsulation.

In addition, the first alumina may have an average particle diameter of 5 to 20 μm.

In addition, the second alumina may have an aspect ratio (a/t) of 10.0 or more, which is a ratio between a thickness (t) and a length (a) of a major axis on a plane perpendicular to the thickness.

In addition, the second alumina may have an average length of 10 to 20 μm on a plane perpendicular to the thickness t.

In addition, the first alumina and the second alumina may be provided in a weight ratio of 1: 0.1 to 10.

In addition, the inorganic filler may have a tap density of 1.5 to 2.7 g/cm 3 and an apparent density of 1.0 to 2.2 g/cm 3 measured according to KS L 1621:2008.

In addition, the inorganic filler may have a ratio of apparent density and tap density of 1:1.1 to 1.8.

In addition, the apparent density and the tap density may have a ratio of 1: 1.4 to 1.6.

In addition, the present invention provides a semiconductor component including a semiconductor chip and a sealing material in which the semiconductor encapsulating composition according to the present invention seals the semiconductor chip and is cured.

The composition for semiconductor encapsulation according to the present invention can obtain higher heat dissipation characteristics and mechanical strength due to point and surface contact characteristics between inorganic filler particles having two types of different shapes, specifically, spherical and plate-shaped alumina. In addition, due to its excellent fluidity, it has excellent filling ability even in narrow and confined spaces, and it can be applied before and after molding and when mounted on a circuit board. It is possible to minimize or prevent damage such as bending, cracking of molded sealing material, and peeling. Furthermore, the shielding effect due to the plate-shaped alumina can effectively block moisture penetrating from the outside and significantly improve moisture resistance.

Hereinafter, embodiments of the present invention will be described in detail so that those skilled in the art can easily implement the present invention. This invention may be embodied in many different forms and is not limited to the embodiments set forth herein.

The composition for semiconductor encapsulation according to the present invention includes a molding component including an epoxy resin and a curing agent, and an inorganic material including spherical first alumina having an average particle diameter of 1 to 45 μm and a maximum particle diameter of 75 μm or less, and plate-shaped second alumina. Contains fillers.

First, the molding component is a component that forms a matrix in which inorganic fillers are dispersed, and is a material that maintains a predetermined shape after the sealing composition is cured and binds the inorganic filler to form a single body, and includes an epoxy resin and a curing agent. .

The epoxy resin functions as the above-described molding component, and is a component that forms a three-dimensional network structure so that the cured encapsulant adheres strongly and firmly to the semiconductor chip. can be used without restrictions. Non-limiting examples of usable epoxy resins include bisphenol A type epoxy resins, cresol novolac type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, naphthalene type epoxy resins, anthracene type epoxy resins, biphenyl type epoxy resins, Tetramethyl Biphenyl Type Epoxy Resin, Phenol Novolak Type Epoxy Resin, Bisphenol A Novolak Type Epoxy Resin, Bisphenol S Novolak Type Epoxy Resin, Biphenyl Novolak Type Epoxy Resin, Naphthol Novolak Type Epoxy Resin, Naphthol Phenol Coaxial Furnace Rockfish type epoxy resin, naphthol cresol coaxial novolak type epoxy resin, aromatic hydrocarbon formaldehyde resin modified phenol resin type epoxy resin, triphenyl methane type epoxy resin, tetraphenyl ethane type epoxy resin, dicyclopentadiene type epoxy resin, dicyclo It may include at least one of pentadiene phenol addition reaction type epoxy resin, phenol aralkyl type epoxy resin, multifunctional phenol resin, and naphthol aralkyl type epoxy resin, but is not limited thereto.

The epoxy resin preferably has moisture resistance and heat resistance, and more preferably has low viscosity and self-extinguishing properties. To this end, a biphenyl-type epoxy resin may be used as the epoxy resin. In this case, the biphenyl-type epoxy resin is, for example, 4,4'-bis (2,3-epoxypropoxy) biphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3', Biphenol compounds such as 5,5'-tetramethylbiphenyl, epichlorohydrin and 4,4'-biphenol or 4,4'-(3,3',5,5'-tetramethyl)biphenol The epoxy resin obtained by making it react, etc. are mentioned. Among them, 4,4'-bis(2,3-epoxypropoxy)-3,3',5,5'-tetramethylbiphenyl and 4,4'-dihydroxy-3,3',5, The glycidyl ether of 5'-tetramethylbiphenyl is preferable.

In addition, the epoxy resin may have, for example, an epoxy equivalent of 150 to 350 g/eq, which may be advantageous in achieving the object of the present invention.

In addition, the curing agent is a component for curing the composition by reacting with the above-described epoxy resin, and the curing agent reacts with the epoxy resin and can be used without limitation in the case of a conventional curing agent used in a composition for semiconductor encapsulation. For example, the curing agent may include at least one of a phenol novolak-type resin, a crephenol xylock-type resin, and a phenol novolak-type resin among various novolak-type resins synthesized from bisphenol A, and a phenol xylock-type resin, but is limited thereto It is not, and an appropriate one may be selected in consideration of the specific type of the selected epoxy resin.

In addition, the curing agent may be provided in the range of 1 to 100 parts by weight based on 100 parts by weight of the epoxy resin. If the content of the curing agent is less than 1 part by weight, curability and formability may be deteriorated, and if it exceeds 100 parts by weight, reliability may be deteriorated due to an increase in moisture absorption and strength may be relatively low.

Meanwhile, in addition to the epoxy resin and the curing agent, the molding component may further include components normally included in semiconductor encapsulating compositions, and may further include, for example, a curing accelerator, a dispersant, and an additive.

The curing accelerator is for accelerating curing of the epoxy resin, and improves high-temperature reliability and continuous workability as well as accelerating the curing reaction. As the curing accelerator, any known component that promotes curing of an epoxy resin may be used without limitation, and examples thereof include imidazole compounds such as 2-methylimidazole, 2-ethyl4methylimidazole, and 2-phenylimidazole. ; amine compounds such as triethylamine, tributylamine, and benzyldimethylamine; tertiary amine compounds such as 2-(dimethylaminomethyl)phenol, 2,4,6-tris(dimethylaminomethyl)phenol, and 1,8-diazabicyclo(5,4,0)undec-7-ene; And it may be at least one selected from phenylphosphine, diphenylphosphine, triphenylphosphine, tributylphosphine, and tri(p-methylphenyl)phosphine, but is not limited thereto, and specific types of the selected epoxy resin and curing agent Considering this, a suitable known curing accelerator may be used.

For example, the curing accelerator may be used in an amount of 0.1 to 10 parts by weight based on 100 parts by weight of the epoxy resin, and when less than 0.1 part by weight is included, the curing accelerator effect may be insignificant. There is a risk that this may be compromised.

In addition, the dispersant serves to prevent aggregation of the inorganic filler and improve flowability and dispersibility in the composition for semiconductor encapsulation. The dispersant may be used without limitation in the case of a type commonly used in a composition for semiconductor encapsulation, and the present invention is not particularly limited thereto. For example, the dispersant may be used by mixing one or two or more kinds of tertiary or quaternary ammonium salts having an alkyl ammonium salt structure, phosphoric acid esters, and the like. For example, the dispersant may be contained in an amount of 0.01 to 10 parts by weight based on 100 parts by weight of the epoxy resin, but is not limited thereto. .

-(3,4-에폭시 시클로헥실) 에틸트리메톡시 실란 등의 에폭시 실란, 아미노프로필 트리에톡시 실란, 우레이도프로필 트리에톡시 실란, N-페닐 아미노프로필 트리메톡시 실란 등의 아미노 실란, 페닐 트리메톡시 실란, 메틸 트리메톡시 실란, 옥타데실 트리메톡시 실란 등의 소수성 실란 화합물이나 메르캅토 실란 등, 표면 처리제로서 Zr 킬레이트, 티타네이트 커플링제, 알루미늄계 커플링제 등을 사용할 수 있다. 또한, 착색제는 카본블랙, 산화철, 염료나 안료 등을 사용할 수 있다. 또한, 이형제는 천연 왁스류, 합성 왁스류, 직쇄 지방산의 금속염, 산 아미드류, 에스테르류, 파라핀 등을 사용할 수 있다. In addition, the additive may be used without limitation in the case of a component employed in a composition for semiconductor encapsulation other than the above-described components. For example, it may further include a stress reducing agent, a colorant, an antifoaming agent, a leveling agent, a coupling agent, a flame retardant, a light absorber, a drying agent, a moisture absorbent, and a releasing agent. Referring to some components, the stress reducing agent is, for example, silicone rubber, polysulfide rubber, acrylic rubber, butadiene rubber, rubber materials such as styrenic block copolymers or saturated elastomers, various thermoplastic resins, silicone resins, etc. A resinous material may be used. In addition, the coupling agent is γ-glycidoxypropyl trimethoxy silane,

-(3,4-epoxy cyclohexyl) epoxy silanes such as ethyltrimethoxy silane, amino silanes such as aminopropyl triethoxy silane, ureidopropyl triethoxy silane, N-phenyl aminopropyl trimethoxy silane, phenyl Hydrophobic silane compounds, such as trimethoxysilane, methyl trimethoxysilane, and octadecyltrimethoxysilane, and surface treatment agents such as mercaptosilane, may be used as Zr chelates, titanate coupling agents, aluminum-based coupling agents, and the like. In addition, carbon black, iron oxide, dyes or pigments may be used as the colorant. In addition, natural waxes, synthetic waxes, metal salts of linear fatty acids, acid amides, esters, paraffins and the like can be used as the release agent.

In addition, depending on the properties of the epoxy resin at room temperature, for example, 23 ° C., a solvent may be further included. In the case of a liquid epoxy resin or an epoxy resin having a low viscosity, a solvent may not be used, but a solvent may be further included when the viscosity of the solid, semi-solid or liquid epoxy resin or semiconductor encapsulation composition needs to be adjusted. At this time, the type of solvent may be selected considering the type of specific epoxy resin, and may be a known organic solvent. In addition, since the amount of the solvent used may be appropriately changed according to the purpose, the present invention is not particularly limited thereto.

Next, the inorganic filler will be described.

The inorganic filler is provided to reduce the expansion coefficient of the cured sealing material to reduce the stress applied to the semiconductor, and to improve heat dissipation and mechanical strength. The inorganic filler includes alumina. In addition, the present invention includes spherical alumina and plate-shaped alumina in order to simultaneously improve the number of contact points and the contact area between inorganic filler particles. When only inorganic fillers having a spherical shape are used, the number of contact points is large, but the contact area is small, and thus it may be difficult to obtain sufficient heat dissipation characteristics. In addition, needle-shaped or fibrous inorganic fillers may be undesirable because they may be pulverized during the kneading process or molding process of the composition and may change the initially designed particle size distribution, tap density, apparent density, etc. and the level of desired initial physical properties. .

The first alumina may have an average particle diameter of 1 to 45 μm, preferably 5 to 20 μm. In addition, the maximum particle diameter of the first alumina may be 75 μm or less. If the average particle diameter of the first alumina exceeds 45 μm, there is a concern that the filling ability in a narrow space may be deteriorated. In addition, when the average particle diameter of the first alumina is less than 1.0 μm, the flowability may be deteriorated, and thus there is a risk of incomplete molding or voids and pores due to unfilled. In addition, there is a possibility that the heat dissipation performance is lowered. In addition, if the maximum particle diameter of the first alumina exceeds 75 μm, the fillability may deteriorate, and the quality of the surface of the encapsulant may deteriorate after the composition for encapsulating semiconductors is cured.

At this time, in the present invention, the particle size of the first alumina is a value based on particle size measurement by laser diffraction light scattering and is a particle size on a volume basis, and the average particle size corresponds to a cumulative frequency of 50% by volume from the smaller particle size side in the volume-based particle size distribution. means the entrance to In addition, the above-described particle size distribution of alumina can be prepared by appropriately utilizing known powder technology and fine particle control technology using commercially available alumina powder, and as specific means, known various grinding classification methods, related devices and grinding conditions using the same, It can be prepared by controlling factors such as grinding time. For example, in the case of a grinder, either a mechanical grinder employing a braid mill or a super rotor, or an air flow type grinder in which particles collide with each other on a wall surface and crush them using high-speed air currents, or the pulverized material using any one The level of grinding can be adjusted by putting it into another grinder and grinding it again. In addition, alumina having a desired particle size distribution can be classified through a standard sieve, a classifier for classifying pulverized materials such as a centrifugal wind disperser, and a disperser using physical dispersion force such as high-speed airflow to prevent aggregation of fine particles. In the present invention, a detailed description thereof is omitted. In addition, alumina uses a method of spraying a powder raw material in a high-temperature flame to melt spheroidization treatment, and then recovering it with a collection device such as a weight sedimentation chamber, cyclone, bag filter, and electric precipitator, for example, It can be produced by appropriately changing processing conditions such as particle size of raw materials, amount of spraying, flame temperature, etc., by operations such as sorting, sieving, mixing, etc. of recovered powder, or by using both together. In addition, the shape of the first alumina is spherical. Here, spherical means that the ratio (b/a) of the minimum value (a) and maximum value (b) of the diameter is 0.90, preferably 0.95, and more preferably 0.98 or more. .

In addition, the second alumina may be plate-shaped alumina having an aspect ratio (a/t) of 10.0 or more, which is a ratio between a thickness (t) and a length (a) of a major axis on a plane perpendicular to the thickness, and through this, the above-described spherical alumina When mixed with primary alumina, the number of contact points and the contact area between alumina particles increase, which can be advantageous for obtaining higher heat dissipation characteristics and mechanical strength, and the moisture resistance can be greatly improved due to the appearance of a shielding effect against moisture. . If the plate-shaped alumina having an aspect ratio of less than 10 is provided, the effect of having the plate-shaped form may be insignificant.

In addition, the second alumina may preferably have an average length of a major axis of 10 to 20 μm on a plane perpendicular to the thickness t, and through this, the desired effect of the present invention can be more easily achieved.

Since the second alumina can be prepared using a known commercial product of plate-shaped alumina or a known manufacturing method such as a Molton-Salt method and a hydrothermal synthesis method, a detailed description thereof will be omitted in the present invention. In addition, it should be noted that alumina having a desired size may be selected through an appropriate classification process as in the case of the first alumina described above for the second alumina.

In addition, the inorganic filler including the first alumina and the second alumina may have a tap density of 1.5 to 2.7 g/cm 3 and an apparent density of 1.0 to 2.2 g/cm 3 measured according to KS L 1621:2008. If the tap density of the inorganic filler is less than 1.5 g/cm 3 , it may be difficult to increase the density of the inorganic filler included in the composition, heat dissipation properties may also be lowered, mechanical strength may be lowered, and peeling due to generation of voids and warping may occur. There are concerns. In addition, when the tap density exceeds 2.7 g/cm 3 , excessively high viscosity properties are exhibited, and it may be difficult for the inorganic filler to be disposed to fill the narrow gap. In addition, if the apparent density of the inorganic filler is less than 1.0 g/cm 3 , the filling characteristics and heat dissipation characteristics of alumina particles are likely to be low, and if it exceeds 2.2 g/cm 3 , flowability is lowered, and wire bonding or chips are damaged in the molding process. There is a risk of inflicting

In addition, according to one embodiment of the present invention, the apparent density and tap density of the inorganic filler may have a ratio of 1: 1.1 to 1.8, more preferably 1: 1.4 to 1.6, thereby increasing the filling rate in narrow gaps and reducing voids. It may be advantageous to minimize occurrence, improve heat dissipation and fluidity, and secure high mechanical strength. In addition, even when the content of the inorganic filler is designed to be high, excellent moldability can be maintained, and wire deformation or breakage can be minimized. In addition, the shielding effect against moisture is maximized, so there is a very advantageous advantage in moisture resistance. If the tap density is less than 1.1 times the apparent density, it may be difficult to increase the density of the inorganic filler provided in the composition, the heat dissipation properties may also be lowered, there is a risk of lowering the mechanical strength, and peeling due to voids and bending may occur. There are concerns. Also, the improvement in moisture resistance may be insignificant. In addition, when the tap density exceeds 1.8 times the apparent density, the flowability is excessively reduced, resulting in poor filling in narrow gaps and causing defects in the packaging process, significantly reducing the yield of good products. There are concerns. In addition, there is a concern that the number or size of voids may significantly increase due to vaporization of moisture or volatile components in the composition due to a high temperature applied in the SMT process or the like.

In addition, the above-mentioned first alumina and the second alumina may be mixed in a content ratio to realize the above-described tap density and apparent density. However, for example, the first alumina and the second alumina may be mixed at a weight ratio of 1:0.1 to 10, preferably at a weight ratio of 1:0.1 to 4.5, and more preferably at a weight ratio of 0.3 to 1.0, through which the desired effect of the present invention is achieved. may be more advantageous to achieve.

In addition, the inorganic filler may further contain an inorganic filler contained in known compositions for semiconductor encapsulation, such as silica, titania, magnesia, silicon nitride, aluminum nitride, and boron nitride, other than alumina. However, even in this case, it is preferable to contain within a range that satisfies the ratio between the tap density and the apparent density of the aforementioned inorganic filler.

The above-mentioned inorganic filler is contained in 80% by weight or more of the composition for semiconductor encapsulation, and more preferably 95% by weight or less. If the inorganic filler is contained in less than 80% by weight, it may not be possible to obtain the desired high heat dissipation characteristics, and if it exceeds 95% by weight, mechanical strength may be weakened or fluidity characteristics may be deteriorated.

The above-described composition for semiconductor encapsulation is obtained by blending each of the above-mentioned materials in a desired amount with a blender or a Henschel mixer, and then kneading them with a heating roll, kneader, single or twin screw extruder, or a mixture obtained by kneading the mixture. It can be prepared by grinding after cooling.

In addition, the present invention includes a semiconductor component provided with a sealing material obtained by sealing a semiconductor chip with the above-described composition for semiconductor sealing and then curing it. The composition for encapsulating a semiconductor may be implemented using a known molding means such as a transfer mold or a multi-plunger used to encapsulate a semiconductor chip. In addition, the specific curing conditions are not particularly limited in the present invention, and appropriate known conditions may be performed as they are or modified in consideration of the selected epoxy resin, the specific type of the curing agent, and the content of the molding component.

Although the present invention will be described in more detail through the following examples, the following examples are not intended to limit the scope of the present invention, which should be interpreted to aid understanding of the present invention.

<Preparation example>

For the spherical alumina produced through the flame spraying process using an oxygen burner, the granules and granules are separated by a cyclone, and the granules are filtered through a standard sieve according to KS-A-501 to collect less than 100㎛, and the collected alumina was again dispersed and classified using a dispersion classifier employing an inertial classifier to prepare first alumina having a maximum particle diameter of 40.5 μm and an average particle diameter of 18.2 μm as volume-based particle diameters based on particle size measurement by laser diffraction light scattering method.

Further, plate-shaped alumina was produced as follows using the molten salt method. Specifically, gamma-phase alumina used as a starting material was prepared by calcining Al ₂ (SO ₄ ) ₃ .14~18H ₂ O (51-57.5%) at 300-550°C and heat-treating at 900°C. A 1:2 mixture of NaCl and KCl was used as the salt. After mixing the starting material, alumina (99.5% by weight of alumina on audit, including 0.5% by weight of alpha-phase alumina with a size of 13 nm) and salt at a weight ratio of 3:8, milling and mixing, heat treatment was performed at a temperature range of 1000 ° C for 1 hour. , After the reaction was completed, the powder was washed 5 times with a 1M HCl solution and distilled water, and then dried with hot air to obtain plate-shaped second alumina powder. After taking SEM pictures of 10 specimens in the obtained second alumina, the major axis length of the plane perpendicular to the thickness of 20 random plate-like aluminas in the photograph was measured, and the average value of the major axis lengths of a total of 200 plate-like alumina was obtained. It was 12.5 μm. In addition, the average thickness measured for at least 10 alumina particles through SEM photographs was 1.0 μm. In addition, the aspect ratio (average length of major axis/average thickness) of the second alumina calculated through this was 12.5.

<Example 1>

로 혼련한 하기 표 1과 같은 반도체 밀봉용 조성물을 제조하였다.100 weight of epoxy resin which is 4,4'-bis(2,3-epoxypropoxy)-3,3',5,5'-tetramethylbiphenyl (softening point 109°C, epoxy equivalent 192 g/eq, viscosity 0.2 poise) 80 parts by weight of a phenol novolac curing agent (OH equivalent 192 g/eq, softening point 66 ° C, viscosity 0.8 poise), 4 parts by weight of triphenylphosphine as a curing accelerator, γ-glycidoxypropyl trime as a silane coupling agent Tap density and apparent density measured according to KS L 1621: 2008 by mixing 6 parts by weight of toxysilane, 6 parts by weight of carnauba wax, and mixing the first alumina and the second alumina prepared in the preparation example at a weight ratio of 1: 1 are 2.5 g/cm 3 and 1.6 g/cm 3 , respectively, and an inorganic filler having an apparent density and a tap density of 1: 1.57 in an amount of 90% by weight based on the total composition, dry blended in a Henschel mixer, and then co-interlocking 2 Shaft extrusion kneader (screw diameter D = 25 mm, kneading disk length 10 D mm, paddle rotation speed 150 rpm, discharge amount 5 kg / h, heater temperature 105-110

To prepare a composition for semiconductor encapsulation as shown in Table 1 kneaded with.

<Examples 2 to 6>

It is prepared in the same manner as in Example 1, but the mixing ratio of the first alumina and the second alumina is changed, or the average particle diameter and the maximum particle diameter of the first alumina are changed by adjusting the classification degree of the first alumina in the preparation example, And / or in preparation of the second alumina, the temperature, time conditions, and / or the alumina content and / or size of the alpha phase contained in the starting material were changed to change the average major axis length and aspect ratio of the second alumina, as shown in Table 1 below. The same composition for semiconductor encapsulation was prepared.

<Comparative Example 1>

It was prepared in the same manner as in Example 1, but the second alumina was changed to spherical alumina having an average particle diameter of 10.8 and a maximum particle diameter of 23.0 μm to prepare a composition for semiconductor encapsulation shown in Table 1 below.

<Experimental Example 1>

The physical properties of the compositions for semiconductor encapsulation according to Examples and Comparative Examples were evaluated and the results are shown in Table 1 below.

1. Spiral flow

After molding the composition for semiconductor encapsulation in a heat transfer molding machine (pressure = 70 kg/cm 2 , temperature = 180 ° C. curing time = 150 seconds) using a spiral flow mold, the flowability of the product was measured. At this time, the measured result value was expressed as a relative percentage of the remaining examples and comparative examples based on Example 1 of 100.

When the value is greater than Example 1, the flowability is superior to that of Example 1, and on the contrary, when the value is smaller than Example 1, it can be evaluated that the flowability is poor.

2. Heat Dissipation Characteristics

The thermal diffusivity, density, and specific heat of the cured specimen obtained by heating the composition for semiconductor encapsulation at 180 ° C. for 5.5 hours were measured, and the thermal conductivity was calculated by multiplying these values. At this time, the thermal diffusivity was measured by the laser flash method in accordance with JIS R 1611: 2011 using a thermal diffusivity measuring device LFA447, the density was measured by the underwater displacement method in accordance with the JIS K 7112 A method, and the specific heat was measured by differential scanning. It was measured by a method based on JIS K 7123 using a calorimeter.

At this time, the measured result value was expressed as a relative percentage of the remaining examples and comparative examples based on Example 1 of 100.

When the value is greater than Example 1, the heat dissipation characteristics are superior to those of Example 1, and conversely, when the value is smaller than Example 1, it can be evaluated that the heat dissipation characteristics are not good.

3. Fillability and moisture resistance

After overlapping two semiconductor chips with a chip size of 8 mmХ8 mmХ0.5 mm through a dia-touch film on the BGA base substrate and connecting them with a gold wire, molded using a transfer molding machine using a composition for semiconductor encapsulation, and then molded at 170 It was cured for 7 hours at ° C. to prepare 100 semiconductor packaging specimens for each example and comparative example. At this time, the gap between the chips was 200 μm, the diameter of the gold wire was 30 μm, and the average length was 5 mm. Afterwards, the manufactured semiconductor packages were counted using an ultrasonic flaw detector to count the number of semiconductor packages with unfilled parts. In addition, after sorting 10 semiconductor packages without voids, they were left in a constant temperature and humidity chamber at 85 ° C. The number of voids after exposure was measured using , and the average number of voids per semiconductor package was calculated.

Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Comparative Example 1 inorganic filler primary alumina shape conception conception conception conception conception conception conception Average particle diameter (㎛) 18.2 10.8 10.8 18.2 18.2 18.2 18.2 Maximum particle size (㎛) 40.5 45 45 40.5 40.5 40.5 40.5 Secondary Alumina shape plate plate plate plate plate plate conception Long axis average length
(μm) 12.5 12.5 12.5 12.5 7.5 14.5 10.8
(average diameter) aspect ratio 12.5 12.5 12.5 12.5 10.6 8.4 - Tap density (a) (g/cm) 2.10 2.45 1.85 2.58 2.28 1.98 2.16 Apparent density (b)
(g/cm) 1.47 1.54 1.10 1.87 1.50 1.56 1.48 b/a 1.43 1.59 1.68 1.38 1.52 1.27 1.46 Properties flow 100 95 78 105 98 106 128 Heat Dissipation Characteristics 100 94 110 80 105 95 88 Fillability (Number of unfilled packages) 0 0 11 0 0 0 0 Moisture resistance (average number of voids per package) 0.5 0.9 0.5 4.8 8.5 12.0 25.4.

As can be seen from Table 1,

Compared to Comparative Example 1 using spherical alumina, it can be seen that the example in which spherical and plate-shaped alumina are mixed is superior in moisture resistance.

In addition, among the Examples, it can be confirmed that Examples 1 and 2 are superior in all physical properties compared to the other Examples.

Although one embodiment of the present invention has been described above, the spirit of the present invention is not limited to the embodiments presented herein, and those skilled in the art who understand the spirit of the present invention may add elements within the scope of the same spirit. However, other embodiments can be easily proposed by means of changes, deletions, additions, etc., but these will also fall within the scope of the present invention.

Claims (11)

Molding components including an epoxy resin and a curing agent; and
An inorganic filler comprising first alumina having an average particle size of 1 to 45 μm and a maximum particle size of 75 μm or less and having a spherical shape and a second alumina having a plate shape; a composition for encapsulating a semiconductor comprising: According to claim 1,
The epoxy resin is a composition for semiconductor encapsulation, characterized in that the biphenyl-based epoxy resin. According to claim 1,
The inorganic filler is provided in 80 to 95% by weight based on the total weight of the composition for semiconductor encapsulation. According to claim 1,
Wherein the first alumina has an average particle diameter of 5 to 20 μm. According to claim 1,
The second alumina has an aspect ratio (a / t), which is a ratio between a thickness (t) and a length (a) of a major axis in a plane perpendicular to the thickness, of 10.0 or more. According to claim 5,
The second alumina is a semiconductor encapsulation composition having an average length of a long axis of 10 to 20 μm. According to claim 1,
Wherein the first alumina and the second alumina are provided in a weight ratio of 1: 0.1 to 10. According to claim 1,
The inorganic filler has a tap density of 1.5 to 2.7 g / cm 3 and an apparent density of 1.0 to 2.2 g / cm 3 measured according to KS L 1621: 2008. According to claim 8,
The inorganic filler is a composition for semiconductor encapsulation having an apparent density and a tap density of 1: 1.1 to 1.8 ratio. According to claim 9,
A composition for encapsulating semiconductors having a ratio of apparent density and tap density of 1:1.4 to 1.6. semiconductor chips; and
A semiconductor component comprising a sealing material in which the semiconductor sealing composition according to any one of claims 1 to 10 is cured by sealing the semiconductor chip.