KR20230047461A - 경화물의 제조 방법, 적층체의 제조 방법, 및, 전자 디바이스의 제조 방법 - Google Patents
경화물의 제조 방법, 적층체의 제조 방법, 및, 전자 디바이스의 제조 방법 Download PDFInfo
- Publication number
- KR20230047461A KR20230047461A KR1020237007812A KR20237007812A KR20230047461A KR 20230047461 A KR20230047461 A KR 20230047461A KR 1020237007812 A KR1020237007812 A KR 1020237007812A KR 20237007812 A KR20237007812 A KR 20237007812A KR 20230047461 A KR20230047461 A KR 20230047461A
- Authority
- KR
- South Korea
- Prior art keywords
- group
- preferable
- compound
- resin composition
- mass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H01L24/03—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01951—Changing the shapes of bond pads
- H10W72/01955—Changing the shapes of bond pads by using masks
-
- H01L2224/0348—
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020149618 | 2020-09-07 | ||
| JPJP-P-2020-149618 | 2020-09-07 | ||
| PCT/JP2021/030027 WO2022050041A1 (ja) | 2020-09-07 | 2021-08-17 | 硬化物の製造方法、積層体の製造方法、及び、電子デバイスの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20230047461A true KR20230047461A (ko) | 2023-04-07 |
Family
ID=80490810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237007812A Withdrawn KR20230047461A (ko) | 2020-09-07 | 2021-08-17 | 경화물의 제조 방법, 적층체의 제조 방법, 및, 전자 디바이스의 제조 방법 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2022050041A1 (https=) |
| KR (1) | KR20230047461A (https=) |
| CN (1) | CN116113884A (https=) |
| TW (1) | TW202210557A (https=) |
| WO (1) | WO2022050041A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118946611A (zh) * | 2022-03-29 | 2024-11-12 | 富士胶片株式会社 | 固化物的制造方法、半导体器件的制造方法、处理液及树脂组合物 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03194559A (ja) | 1989-12-25 | 1991-08-26 | Hitachi Chem Co Ltd | 感光性ポリイミド前駆体用現像液 |
| JPH11233949A (ja) | 1998-02-16 | 1999-08-27 | Hitachi Chem Co Ltd | 感光性ポリイミド前駆体用現像液及びこれを用いたパターン製造法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003255535A (ja) * | 2002-03-06 | 2003-09-10 | Hitachi Chemical Dupont Microsystems Ltd | 感光性樹脂組成物、パターン製造法及びこれを用いた電子部品 |
| JP4396143B2 (ja) * | 2002-06-07 | 2010-01-13 | 東レ株式会社 | 耐熱性樹脂前駆体組成物 |
| JP4280574B2 (ja) * | 2002-07-10 | 2009-06-17 | キヤノン株式会社 | 液体吐出ヘッドの製造方法 |
| JP5146821B2 (ja) * | 2008-05-01 | 2013-02-20 | 国立大学法人横浜国立大学 | 反応現像画像形成法 |
| JP5747437B2 (ja) * | 2009-04-14 | 2015-07-15 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性樹脂組成物及びこれを用いた回路形成用基板 |
| JP6080759B2 (ja) * | 2011-06-24 | 2017-02-15 | 東京応化工業株式会社 | ネガ型感光性樹脂組成物、パターン形成方法、硬化膜、絶縁膜、カラーフィルタ、及び表示装置 |
| KR102212731B1 (ko) * | 2016-08-25 | 2021-02-08 | 후지필름 가부시키가이샤 | 적층체의 제조 방법 및 전자 디바이스의 제조 방법 |
| JP2018173469A (ja) * | 2017-03-31 | 2018-11-08 | 東レ株式会社 | 感光性樹脂組成物フィルム、絶縁膜および配線基板 |
| TWI862487B (zh) * | 2018-02-23 | 2024-11-21 | 日商富士軟片股份有限公司 | 膜的製造方法、積層體的製造方法、半導體器件的製造方法及膜形成用組成物 |
-
2021
- 2021-08-17 CN CN202180054236.1A patent/CN116113884A/zh active Pending
- 2021-08-17 KR KR1020237007812A patent/KR20230047461A/ko not_active Withdrawn
- 2021-08-17 JP JP2022546206A patent/JPWO2022050041A1/ja active Pending
- 2021-08-17 WO PCT/JP2021/030027 patent/WO2022050041A1/ja not_active Ceased
- 2021-08-24 TW TW110131349A patent/TW202210557A/zh unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03194559A (ja) | 1989-12-25 | 1991-08-26 | Hitachi Chem Co Ltd | 感光性ポリイミド前駆体用現像液 |
| JPH11233949A (ja) | 1998-02-16 | 1999-08-27 | Hitachi Chem Co Ltd | 感光性ポリイミド前駆体用現像液及びこれを用いたパターン製造法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2022050041A1 (https=) | 2022-03-10 |
| WO2022050041A1 (ja) | 2022-03-10 |
| CN116113884A (zh) | 2023-05-12 |
| TW202210557A (zh) | 2022-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102864324B1 (ko) | 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 폴리이미드 전구체 및 그 제조 방법 | |
| KR20230043155A (ko) | 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법 | |
| KR20230032961A (ko) | 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스, 및, 화합물 | |
| KR102627683B1 (ko) | 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법, 및, 처리액 | |
| WO2022224838A1 (ja) | 樹脂組成物、硬化物、積層体、硬化物の製造方法、半導体デバイス、及び、樹脂 | |
| KR20230045608A (ko) | 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 광염기 발생제 | |
| KR102864321B1 (ko) | 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 폴리이미드 전구체 | |
| KR102827423B1 (ko) | 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법 | |
| KR20230057444A (ko) | 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스 | |
| KR20230044484A (ko) | 감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스 | |
| KR102877409B1 (ko) | 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법, 및, 처리액, 및, 수지 조성물 | |
| JP7528260B2 (ja) | 硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、樹脂組成物、硬化物、積層体、及び、半導体デバイス | |
| WO2023026892A1 (ja) | 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス、並びに、塩基発生剤 | |
| KR20230113584A (ko) | 수지 조성물, 경화물, 적층체, 경화물의 제조 방법,및, 반도체 디바이스, 및, 화합물 | |
| KR20230043166A (ko) | 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스 | |
| KR20230047157A (ko) | 복합 패턴의 제조 방법, 수지 조성물, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법 | |
| KR20230051684A (ko) | 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스 | |
| KR102860304B1 (ko) | 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 염기 발생제 | |
| KR102938791B1 (ko) | 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 환화 수지의 전구체 | |
| KR20230047461A (ko) | 경화물의 제조 방법, 적층체의 제조 방법, 및, 전자 디바이스의 제조 방법 | |
| JP7526272B2 (ja) | ポリイミド前駆体の製造方法、及び、硬化性樹脂組成物の製造方法 | |
| KR20240027107A (ko) | 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 수지 조성물, 경화물, 적층체, 및, 반도체 디바이스 | |
| WO2023286571A1 (ja) | 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス | |
| KR20230044259A (ko) | 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 화합물 | |
| KR20230043165A (ko) | 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| PC1202 | Submission of document of withdrawal before decision of registration |
St.27 status event code: N-1-6-B10-B11-nap-PC1202 |
|
| WITB | Written withdrawal of application | ||
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |