KR20230033856A - Substrate support unit and substrate processing apparatus that prevent particle accumulation - Google Patents

Abstract

According to an embodiment of the present invention, a substrate support unit may be provided. The substrate support unit includes: a stage on which a substrate is seated; a pin module protruding from an upper surface of the stage to support the substrate; and a by-product accumulation prevention module coupled to the pin module and preventing process by-products from accumulating on the substrate by applying vibration to the pin module and transferring the vibration to the substrate.

Description

Substrate support unit and substrate processing device to prevent accumulation of by-products

The present invention relates to a substrate support unit and a substrate processing apparatus including a byproduct accumulation prevention module preventing particles such as byproducts from accumulating on the surface of a substrate.

A semiconductor device can be manufactured by forming a predetermined pattern on a substrate. When forming a predetermined pattern on a substrate, a number of processes, such as a deposition process, a lithography process, and an etching process, can be continuously performed in equipment used in a semiconductor manufacturing process. .

Among manufacturing processes of semiconductor devices, plasma processing equipment is widely used in a deposition process of forming a film on a semiconductor substrate and an etching process of etching a film.

A plasma treatment process using a plasma treatment equipment is performed at a high temperature using a chemical reaction and a surface reaction by ionized process gas (plasma). During the process, various by-products are generated in the processing space, including solid by-products formed by reacting plasma and a film (eg, an oxide film) formed on the substrate or plasma and other gases present in the chamber. However, there is a problem in that such by-products gradually accumulate in etching grooves formed on the substrate, causing etching defects in which areas to be etched cannot be etched.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and is intended to provide a substrate support unit and a substrate processing apparatus including the same, which prevent process by-products from being accumulated on a substrate.

The object of the present invention is not limited to the above, and other objects and advantages of the present invention not mentioned can be understood by the following description.

According to one embodiment of the present invention, the stage on which the substrate is seated; a pin module protruding from an upper surface of the stage to support the substrate; and a byproduct accumulation prevention module coupled to the pin module and applying vibration to the pin module to transfer the vibration to the substrate, thereby preventing process byproducts from accumulating on the substrate.

In one embodiment, the pin module is a plurality of pin members (disposed on the stage at intervals so as to be spaced apart from each other from the central area on the stage toward the edge) positioned at regular intervals while gradually moving away from the center of the stage ( fixed support pins), and each of the plurality of pin members may be connected to the by-product accumulation prevention module.

The by-product accumulation prevention module may include a plurality of vibrators each applying vibration having a predetermined period to the plurality of pin members.

In one embodiment, the vibrator may be a piezoelectric actuator.

In one embodiment, each of the vibrators may be individually controlled.

In one embodiment, the stage may include an electrostatic chuck (ESC) that clamps the substrate using electrostatic force.

According to one embodiment of the present invention, a process chamber providing a substrate processing space; a substrate support unit disposed in the substrate processing space; and a plasma generator generating plasma to perform an etching process in the substrate processing space. The substrate support unit may include a stage on which a substrate is placed; a pin module protruding from an upper surface of the stage and including a plurality of pin members supporting the substrate; and a by-product accumulation prevention module coupled to each of the pin members and applying vibration to each of the pin members and transmitting the vibration to the substrate to prevent process by-products from accumulating on the substrate, applied to each of the pin members The resulting vibration can be independently controlled for each pin member.

According to one embodiment of the present invention, a stage on which a substrate is placed and a plurality of pin holes penetrated in a vertical direction; a plurality of lift pins movably inserted into the plurality of pin holes along the pin holes to load the substrate onto the stage or unload the loaded substrate from the stage; a pin driving module that lifts the plurality of lift pins; and a by-product accumulation prevention module for preventing process by-products from accumulating on the substrate in the process of performing a treatment process on the loaded substrate using vibration, wherein the by-product accumulation prevention module is installed on the plurality of lift pins. The plurality of lift pins are configured to apply vibration, and the plurality of lift pins have upper ends of the pin driving module to transfer vibration from the by-product accumulation prevention module to the substrate and vibrate the substrate to remove the process by-product from the substrate. As a result, a substrate support unit maintained at a height in contact with the back surface of the substrate may be provided.

The substrate support unit including the plurality of lift pins may further include a plurality of pin members respectively protruding from the upper surface of the stage to support the loaded substrate. When the substrate is loaded, upper ends of the plurality of lift pins are lowered to a lower height than upper ends of the plurality of pin members to transfer the substrate to the plurality of pin members. In the process of performing a treatment process on the substrate loaded and supported by the plurality of pin members, when the substrate is to be vibrated, the plurality of lift pins may be raised to a height at which their upper ends come into contact with the back surface of the substrate. there is. Depending on the implementation conditions, etc., when the plurality of lift pins are lowered for loading the substrate, the upper ends are maintained at the same height as the upper ends of the plurality of pin members to support the loaded substrate together with the plurality of pin members. There may be. Alternatively, depending on implementation conditions, a plurality of the pin members may be excluded.

According to an embodiment of the present invention, the vibration applied to the pin module supporting the substrate is transferred to the substrate to relieve the adhesive force between the substrate and process by-products and scatter the process by-products from the substrate. Accordingly, when the substrate processing space is exhausted, process by-products that have settled on the substrate can be easily discharged through the exhaust hole.

The effects of the present invention are not limited to those mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the following description.

1 is a cross-sectional view schematically showing the structure of a substrate processing apparatus according to an embodiment of the present invention.
2 is a cross-sectional view schematically showing the structure of a substrate processing apparatus according to another embodiment of the present invention.
3 and 4 are views for explaining a substrate support unit according to an embodiment of the present invention.
FIG. 5 is a partially enlarged view for explaining the pin member of FIG. 4 .

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. However, the present invention may be embodied in many different forms and is not limited to the embodiments described herein.

In describing the embodiments of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description will be omitted, and parts with similar functions and actions will be omitted. The same reference numerals will be used throughout the drawings.

Since at least some of the terms used in the specification are defined in consideration of functions in the present invention, they may vary according to user, operator intention, custom, and the like. Therefore, the term should be interpreted based on the contents throughout the specification.

Also, in this specification, the singular form also includes the plural form unless otherwise specified in the phrase. In the specification, when it is said to include a certain component, this means that it may further include other components without excluding other components unless otherwise stated. And, when a part is said to be connected (or combined) with another part, this is not only directly connected (or combined), but also indirectly connected (or combined) through another part. include

On the other hand, in the drawing, the size or shape of the component, the thickness of the line, etc. may be expressed somewhat exaggerated for convenience of understanding.

Embodiments of the invention are described with reference to schematic illustrations of idealized embodiments of the invention. Accordingly, variations from the shape of the illustration, eg, variations in manufacturing method and/or tolerances, are fully expected. Accordingly, embodiments of the present invention are not to be described as being limited to specific shapes of regions illustrated as diagrams, but to include variations in shape, and elements described in the figures are purely schematic and their shapes are elements. It is not intended to describe the exact shape of them, nor is it intended to limit the scope of the present invention.

When an element or layer is referred to as being "on" or "on" another element or layer, it is not only directly on the other element or layer, but also when another layer or other element is intervening therebetween. All inclusive. On the other hand, when an element is referred to as “directly on” or “directly on”, it indicates that another element or layer is not intervened.

The spatially relative terms "below", "beneath", "lower", "above", "upper", etc. It can be used to easily describe the correlation between elements or components and other elements or components. Spatially relative terms should be understood as encompassing different orientations of elements in use or operation in addition to the orientations shown in the figures. For example, when flipping elements shown in the figures, elements described as “below” or “beneath” other elements may be placed “above” the other elements. Thus, the exemplary term “below” may include directions of both below and above. Elements may also be oriented in other orientations, and thus spatially relative terms may be interpreted according to orientation.

Although first, second, etc. are used to describe various elements, components and/or sections, it is needless to say that these elements, components and/or sections are not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Accordingly, it goes without saying that the first element, first element, or first section referred to below may also be a second element, second element, or second section within the spirit of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, the same or corresponding components regardless of reference numerals are given the same reference numerals, Description will be omitted.

In an embodiment of the present invention, an electrostatic chuck will be described as an example of a substrate support unit. However, the present invention is not limited thereto, and if the electrostatic chuck is not necessarily required, the support unit may support the substrate by mechanical clamping or by vacuum.

Referring to FIG. 1 , the substrate processing apparatus 100 includes a housing 110, a substrate support unit 200, a plasma generating unit 130, a shower head unit 140, and a gas supply unit 160. ), a wall liner unit 170, a baffle unit 180, and an upper module 190.

The substrate processing apparatus 100 is a system that processes a substrate W (eg, a wafer) by using an etching process (eg, a dry etching process) in a vacuum environment. The substrate processing apparatus 100 may process the substrate W using, for example, a plasma process.

The chamber 110 provides a space in which a plasma process is performed. The chamber 110 may have an exhaust hole 111 at a lower portion thereof.

The exhaust hole 111 may be connected to the exhaust line 113 in which the pump 112 is mounted. The exhaust hole 111 may discharge reaction by-products generated during the plasma process and gas remaining inside the chamber 110 to the outside of the chamber 110 through the exhaust line 113 . In this case, the inner space of the chamber 110 may be reduced to a predetermined pressure.

The chamber 110 may have an opening 114 formed in its sidewall. The opening 114 may function as a passage through which the substrate W enters and exits the chamber 110 . The opening 114 may be configured to be opened and closed by the door assembly 115 .

The door assembly 115 may include an outer door 115a and a door actuator 115b. The outer door 115a is provided on the outer wall of the chamber 110 . The outer door 115a may be moved in a vertical direction (ie, in the third direction 30) through the door driver 115b. The door actuator 115b may operate using a motor, hydraulic cylinder, pneumatic cylinder, or the like.

The substrate support unit 200 is installed in the inner lower region of the chamber 110 . The substrate support unit 200 may support the substrate W using electrostatic force. However, the present embodiment is not limited thereto. The substrate support unit 200 may support the substrate W in various ways, such as mechanical clamping or vacuum.

When the substrate support unit 200 supports the substrate W using electrostatic force, the substrate support unit 200 is an electrostatic chuck (ESC) including a base component 210 and a chucking component 220. can be implemented as

The base member 210 supports the chucking member. The base member 210 may be made of, for example, an aluminum component and provided as an aluminum base plate.

The chucking member 220 uses electrostatic force to support the substrate W placed thereon. The chucking member 220 may be made of a ceramic component and provided as a ceramic plate or a ceramic puck, and is coupled to the base member 210 to be fixed on the base member 210 It can be.

The chucking member 220 may be movably installed inside the chamber 110 in a vertical direction (ie, in the third direction 30 ) by using a driving member (not shown). When the chucking member 220 is formed to be movable in the vertical direction, it may be possible to position the substrate W in a region showing a more uniform plasma distribution.

The ring assembly 230 is provided to surround the rim of the chucking member 220 . The ring assembly 230 may be provided in a ring shape to support the edge area of the substrate W. The ring assembly 230 may include a focus ring 232 and an insulating ring 234 .

The focus ring 232 is formed inside the insulating ring 234 and surrounds the chucking member 220 . The focus ring 232 may be made of silicon and may focus plasma onto the substrate W.

The insulating ring 234 is formed outside the focus ring 232 and is provided to surround the focus ring 232 . This insulating ring 234 may be provided with a quartz material.

Meanwhile, the ring assembly 230 may further include an edge ring (not shown) formed in close contact with the edge of the focus ring 232 . The edge ring may be formed to prevent the side surface of the chucking member 220 from being damaged by plasma.

The cooling member 240 and the heating member 250 are provided to maintain the process temperature of the substrate W when an etching process is progressing inside the chamber 110 . The cooling member 240 may be provided as a cooling line through which a refrigerant flows, and the heating member 250 may be provided as a hot wire for this purpose.

The cooling member 240 and the heating member 250 may be installed inside the electrostatic chuck 200 to maintain the substrate W at a process temperature. For example, the cooling member 240 may be installed inside the base member 210 and the heating member 250 may be installed inside the chucking member 220 .

Meanwhile, the cooling member 240 may receive a refrigerant using a chiller 242 . The cooling device 242 may be installed outside the chamber 110 .

The plasma generating unit 130 generates plasma from gas remaining in the discharge space. Here, the discharge space means a space located above the electrostatic chuck 200 in the inner space of the chamber 110 .

The plasma generating unit 130 may generate plasma in a discharge space inside the chamber 110 using an inductively coupled plasma (ICP) source. In this case, the plasma generating unit 130 may use an antenna unit 193 installed on the upper module 190 as an upper electrode and use the electrostatic chuck 200 as a lower electrode.

However, the present embodiment is not limited thereto. The plasma generating unit 130 may also generate plasma in a discharge space inside the chamber 110 using a Capacitively Coupled Plasma (CCP) source. In this case, the plasma generating unit 130 may use the shower head unit 140 as an upper electrode and the electrostatic chuck 200 as a lower electrode, as shown in FIG. 2 . 2 is a cross-sectional view schematically showing the structure of a substrate processing apparatus according to another embodiment of the present invention.

It will be described with reference to FIG. 1 again.

The plasma generating unit 130 may include an upper electrode, a lower electrode, an upper power source 131 and a lower power source 133 .

The upper power source 131 applies power to the upper electrode, that is, the antenna unit 193. Such an upper power source 131 may be provided to control the characteristics of plasma. The top power source 131 may be provided to adjust ion bombardment energy, for example.

Although a single upper power source 131 is shown in FIG. 1 , it is also possible to include a plurality of upper power sources 131 in this embodiment. When a plurality of upper power sources 131 are provided, the substrate processing apparatus 100 may further include a first matching network (not shown) electrically connected to the plurality of upper power sources.

The first matching network may match frequency powers of different sizes input from each upper power source and apply the matching frequency powers to the antenna unit 193 .

Meanwhile, a first impedance matching circuit (not shown) may be provided on the first transmission line 132 connecting the upper power source 131 and the antenna unit 193 for the purpose of impedance matching.

The first impedance matching circuit may act as a lossless passive circuit to effectively (ie, maximally) transfer electrical energy from the upper power source 131 to the antenna unit 193 .

The lower power source 133 applies power to the lower electrode, that is, the electrostatic chuck 200 . The lower power source 133 may serve as a plasma source for generating plasma or may serve to control characteristics of plasma together with the upper power source 131 .

Although a single lower power supply 133 is shown in FIG. 1 , a plurality of lower power sources 133 may be provided in this embodiment as in the case of the upper power supply 131 . When a plurality of lower power sources 133 are provided, a second matching network (not shown) electrically connected to the plurality of lower power sources may be further included.

The second matching network may match frequency powers of different magnitudes input from each lower power source and apply the matched frequency powers to the electrostatic chuck 200 .

Meanwhile, a second impedance matching circuit (not shown) may be provided on the second transmission line 134 connecting the lower power source 133 and the electrostatic chuck 200 for the purpose of impedance matching.

Like the first impedance matching circuit, the second impedance matching circuit acts as a lossless passive circuit to effectively (ie, maximally) transfer electrical energy from the lower power source 133 to the electrostatic chuck 200 .

The shower head unit 140 may be vertically opposed to the electrostatic chuck 200 inside the chamber 110 . The shower head unit 140 may include a plurality of gas feeding holes 141 to inject gas into the chamber 110, and have a larger diameter than the electrostatic chuck 200. can be provided.

Meanwhile, the shower head unit 140 may be made of a silicon component, or may be made of a metal component.

The gas supply unit 160 supplies process gas (gas) into the chamber 110 through the shower head unit 140 . The gas supply unit 160 may include a gas supply source 161 and a gas supply line 162 .

The gas supply source 161 supplies an etching gas used to process the substrate W as a process gas. The gas supply source 161 may supply a gas containing a fluorine component (eg, a gas such as SF6 or CF4) as an etching gas.

A single gas supply source 161 may be provided to supply etching gas to the shower head unit 140 . However, the present embodiment is not limited thereto. A plurality of gas supply sources 161 may be provided to supply process gas to the shower head unit 140 .

The gas supply line 162 connects the gas supply source 161 and the shower head unit 140 . The gas supply line 162 transfers the process gas supplied through the gas supply source 161 to the shower head unit 140 so that the etching gas can flow into the chamber 110 .

Meanwhile, when the shower head unit 140 is divided into a center zone, a middle zone, an edge zone, and the like, the gas supply unit 160 is configured to each of the shower head unit 140 A gas distributor (not shown) and a gas distribution line (not shown) may be further included to supply process gas to the zone.

The gas distributor distributes the process gas supplied from the gas supply source 161 to each area of the shower head unit 140 . This gas distributor may be connected to the gas supply source 161 through the gas supply line 161 .

The gas distribution line connects the gas distributor and each area of the shower head unit 140 . Through the gas distribution line, process gas distributed by the gas distributor may be transferred to each area of the shower head unit 140 .

Meanwhile, the gas supply unit 160 may further include a second gas supply source (not shown) for supplying deposition gas.

The second gas supply source is supplied to the shower head unit 140 to enable anisotropic etching by protecting the side surface of the substrate W pattern. The second gas supply source may supply a gas such as C4F8 or C2F4 as a deposition gas.

The wall liner unit 170 protects the inner surface of the chamber 110 from arc discharge generated during process gas excitation and impurities generated during a substrate processing process. The wall liner unit 170 may be provided inside the chamber 110 in a cylindrical shape with upper and lower portions open.

The wall liner unit 170 may be provided adjacent to the inner wall of the chamber 110 . The wall liner unit 170 may have a support ring 171 thereon. The support ring 171 protrudes from the top of the wall liner unit 170 in an outward direction (ie, in the first direction 10) and is placed on the top of the chamber 110 to support the wall liner unit 170. there is.

The baffle unit 180 serves to exhaust plasma process by-products, unreacted gases, and the like. The baffle unit 180 may be installed between the inner wall of the chamber 110 and the electrostatic chuck 200 . The baffle unit 180 may be provided in an annular ring shape and may include a plurality of through holes penetrating in a vertical direction (ie, in the third direction 30 ). The baffle unit 180 may control the flow of process gas according to the number and shape of through holes.

The upper module 190 is installed to cover the open top of the chamber 110 . This upper module 190 may include a window member 191, an antenna member 192 and an antenna unit 193.

The window member 191 is formed to cover the top of the chamber 110 to seal the internal space of the chamber 110 . The window member 191 may be provided in a plate (eg, disk) shape, and may be formed of an insulating material (eg, alumina (Al ₂ O ₃ )).

The window member 191 may include a dielectric window. The window member 191 may have a through hole through which the second gas supply line 162 is inserted, and the inside of the chamber 110 may be formed. A coating film may be formed on the surface in order to suppress generation of particles when a plasma process is performed.

The antenna member 192 is installed above the window member 191, and a space of a predetermined size may be provided so that the antenna unit 193 can be disposed therein.

The antenna member 192 may be formed in a cylindrical shape with an open bottom, and may have a diameter corresponding to that of the chamber 110 . The antenna member 192 may be detachably attached to the window member 191 .

The antenna unit 193 functions as an upper electrode and is equipped with a coil provided to form a closed loop. The antenna unit 193 generates a magnetic field and an electric field inside the chamber 110 based on the power supplied from the upper power source 131, so that the energy introduced into the chamber 110 through the shower head unit 140 It functions to excite gas into plasma.

The antenna unit 193 may be equipped with a planar spiral coil. However, the present embodiment is not limited thereto. The structure or size of the coil may be variously changed by those skilled in the art.

3 and 4 are enlarged views for explaining the substrate support unit 200 of FIGS. 1 and 2 , and FIG. 5 is an enlarged view for explaining the pin member 260 of FIGS. 3 and 4 .

Referring to FIGS. 3 and 4 , the substrate support unit 200 includes a stage on which a substrate is seated, a pin module protruding from the upper surface of the stage to support the substrate W, and a pin module coupled to the pin module to support the substrate W. A by-product accumulation prevention module 300 preventing process by-products from accumulating may be included.

When the substrate supporting unit 200 supports the substrate W using electrostatic force, the stage may be implemented as an electrostatic chuck (ESC) including a chucking component 220 .

The pin module may include a plurality of pin members 260 and lift pins 270 . Each pin member 260 may be provided in a connected state with the by-product accumulation prevention module 300 .

The lift pins 270 may be installed on the chucking member 220 so as to be able to move up and down in order to load or unload the substrate W on the stage 220 and may be driven by a motor. The lift pin 270 may be installed in a form inserted into a pin hole formed through the stage 220 and driven by a pin driving module having a driving unit and a pin plate. The lower end of the lift pin 270 may be connected to the pin plate. The driving means may include a driving source such as a motor, and the pin plate may be moved up and down by the driving means.

The number of lift pins 270 may be three, for example. The three lift pins 270 may be arranged in a triangular shape at the center of the stage. When the substrate W is seated on the lift pins 270, the lift pins 270 descend, and the substrate W may be supported by the pin member 260.

The plurality of pin members 260 may support the substrate W. As shown in FIG. 4 , the pin member 260 may be positioned at regular intervals while gradually moving away from the center of the chucking member 220 . For example, the pin member 260 may be installed to form a certain angle on the stage with respect to the lift pin 270 . Accordingly, the pin member 260 can uniformly support the entire area of the substrate W. The number of pin members 260 may be adjusted.

The substrate support unit 200 according to an embodiment of the present invention may further include a byproduct accumulation prevention module 300 provided in a form coupled to the pin module.

Referring to FIG. 5 , the pin member 260 may include a body 262 and a contact protrusion 264 and may be connected to the by-product accumulation prevention module 300 . The main body 262 may have an open upper side and include an inner space. The contact protrusion 264 may be installed in the inner space of the body 262 and exposed through an open upper side of the body 262 .

The by-product accumulation prevention module 300 may be connected to the contact protrusion 264 inside the main body 262 and provided, and connected to the pin member 260 outside the main body.

The byproduct accumulation prevention module 300 prevents process byproducts from accumulating on the substrate surface (in particular, etching grooves formed on the substrate surface during the etching process) to prevent etching defects caused by the accumulated byproducts. The by-product accumulation prevention module 300 applies vibration having a predetermined cycle to the pin member 260 so that process by-products are removed before they accumulate on the substrate surface. To this end, the byproduct accumulation prevention module 300 may include a plurality of vibrators 310 for applying vibration to each pin member 260 . At this time, the vibration applied to the pin member 260 by the by-product accumulation prevention module 300 may be a vertical vibration.

For example, the by-product accumulation prevention module 300 may include a piezoelectric actuator as the vibrator 310 . The piezoelectric actuator 310 may convert electrical energy into mechanical energy, and may also convert mechanical energy into electrical energy. When a piezoelectric actuator is applied as the vibrator 310, the period and amplitude of the applied vibration can be controlled by controlling the electrical energy applied to the piezoelectric actuator. Therefore, it is possible to secure the optimal vibration period and amplitude for each process.

When the piezoelectric actuator 310 applies vibration to the pin member 260 at a predetermined period, the vibration applied to the pin member 260 is transmitted to the substrate W, thereby vibrating the substrate W. According to the vibration transmitted to the substrate W, it is possible to prevent by-products from being attached to the substrate surface before the by-products are attached to the substrate surface. In addition, by-products already attached to the surface of the substrate may be dispersed from the substrate by relieving the adhesive force between the substrate and the by-product. Accordingly, process by-products present in the processing space do not accumulate on the surface (etching groove) of the substrate W and can be exhausted through the exhaust hole 111 when the processing space is exhausted by the pump 112 .

Meanwhile, the byproduct accumulation prevention module 300 may further include a guide unit 320 for suppressing vibration in an unintended direction. For example, the vibration to be applied to the pin module by the by-product accumulation prevention module 300 may be a vibration applied in a vertical direction. When vibration in the horizontal direction is applied to the pin module, the amount of impact applied to the substrate W may increase. In addition, when the vibration transmitted to the substrate W through the pin member 260 is a horizontal vibration, there is a possibility that the position of the substrate W supported by the pin member 260 is distorted, and the pin member ( 260) may cause problems. Therefore, with respect to the vibration generated by the vibrator 310, the guide unit for guiding the vibrator 310 to suppress vibration in directions other than the vertical direction and to apply only the vertical vibration to the pin member 260 ( 320) is preferably provided. For example, the guide unit 320 may be manufactured based on a flexible mechanism. Specifically, an anti-vibration element that adheres to the outer surface of the vibrator 310 and reduces or attenuates vibration in a horizontal direction generated by the vibrator 310 may be included.

In addition, the byproduct accumulation prevention module 300 may prevent the accumulation of not only process byproducts but also various particles that may be attached to the substrate on the surface of the substrate.

Hereinafter, an action of preventing the accumulation of by-products of the substrate processing apparatus according to an embodiment of the present invention will be described in detail.

Before the plasma treatment process is performed, the substrate W is carried into the processing space while being held by a transfer robot such as an end effector, and is lifted by lift pins 270 in an elevated state as shown in FIG. 4 . Loaded. The substrate W loaded on the lift pins 270 is lowered as the lift pins 270 lower while being in contact with the end (top) of the lift pins 270 . The lowered substrate W comes into contact with the pin member 260, and the substrate support unit 200 adsorbs the substrate W using electrostatic force. Thereafter, the processing of the substrate (W) starts, and the electrostatic force of the substrate support unit 200 is maintained while the processing of the substrate (W) is performed.

During the plasma process, various by-products including solid by-products may be generated by a reaction between plasma and a film (eg, an oxide film) formed on the substrate or a reaction between plasma and another gas present in the chamber 110 . The generated by-products may accumulate in an etched area on the substrate and affect an etched amount, causing etching defects. In particular, the narrower the line width of the circuit formed on the substrate, the more frequently this problem may occur. In order to prevent this, in the substrate support unit 200 according to an embodiment of the present invention, vibration applied from the byproduct accumulation prevention module 300 passes through the plurality of pin members 260 while the plasma process is performed to the substrate (W). ), it is possible to scatter process by-products around the substrate W, thereby preventing process by-products from accumulating on the surface of the substrate.

Specifically, the by-product accumulation prevention module 300 including the vibrator 310 (piezoelectric actuator) applies vibration in a vertical direction to the pin module, and by the vibration transmitted to the substrate W through the pin member 260 Accumulation of by-products generated during the plasma etching process on the surface of the substrate W may be prevented. At this time, the period and amplitude of the vibration applied to the pin member 260 may be controlled by a piezoelectric actuator. The vibration in the vertical direction transmitted to the substrate (W) may weaken the adhesive force between the substrate (W) and the by-product. In addition, as soon as the by-product is settled on the surface of the substrate by vibration, it can be scattered from the substrate (W) by vibration. Therefore, process by-products generated by the plasma process do not remain on the surface of the substrate (W) after the process is completed, and can all be exhausted through the exhaust hole 111 during the exhausting process of the chamber 110 . In this way, as process by-products are prevented from being accumulated on the substrate W by the by-product accumulation prevention module 300, etching defects caused by the accumulated by-products can also be prevented.

Meanwhile, the byproduct accumulation prevention module 300 may apply vibration to the substrate W for each region. For example, the byproduct accumulation prevention module 300 may be provided to individually control a plurality of vibrators connected to each pin member 260 located at regular intervals while gradually moving away from the center of the chucking member 220 . According to this configuration, the byproduct accumulation prevention module 300 may apply vibrations of different cycles or different amplitudes for each region to a plurality of regions of the substrate. Alternatively, vibration may be applied only to a partial region of the substrate W. To this end, the byproduct accumulation prevention module 300 may further include a control unit (not shown) for individually controlling each vibrator.

Meanwhile, the byproduct accumulation prevention module 300 may be coupled to the plurality of lift pins 270 to apply vibration to the lift pins 270 . The plurality of lift pins 270 transfer vibration from the byproduct accumulation prevention module 300 to the substrate W to vibrate the substrate W to remove process byproducts from the substrate W. The silver stage 220 may be configured to maintain contact with the substrate W not only during loading and unloading of the substrate, but also during processing. For example, the lift pins 270 may be maintained at a height at which ends of the lift pins 270 contact the back surface of the substrate by the pin driving module. That is, the upper end of the lift pin 270 may be maintained at the same height as the upper end of the plurality of pin members 260 supporting the substrate W, so that the substrate W may be supported together with the pin members 260 .

The lift pins 270 are lowered to a height lower than the upper end of the pin member 260 to load the substrate W on the stage 220, and then lift the substrate W at the time of transmitting vibration to the substrate W. It can be raised to a height in contact with the back of the. Alternatively, the height of the lift pins 270 lowered to load the substrate W on the stage 220 may be maintained at a height that contacts the back surface of the substrate W.

When the by-product accumulation prevention module 300 is coupled to the lift pins 270 and provided, the plurality of pin members 260 for supporting the substrate W may be omitted depending on implementation conditions. For example, the substrate W may be supported in contact with the stage 220 .

Alternatively, the byproduct accumulation prevention module 300 may be provided in the form of separately including a plurality of support pins supporting the substrate (W).

The above description is merely an example of the technical idea of the present invention, and various modifications and variations can be made to those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be construed according to the claims below, and all technical ideas within the equivalent range should be construed as being included in the scope of the present invention.

200: substrate support unit
260: pin member
270: lift pin
300: by-product accumulation prevention module
310: vibrator (piezoelectric actuator)
320: guide unit

Claims (10)

a stage on which a substrate is placed;
a pin module protruding from an upper surface of the stage to support the substrate; and
A substrate support unit including a by-product accumulation prevention module coupled to the pin module and preventing process by-products from accumulating on the substrate by applying vibration to the pin module and transferring the vibration to the substrate.
According to claim 1,
The pin module includes a plurality of pin members positioned at regular intervals gradually away from the center of the stage, and each pin member is connected to the byproduct accumulation prevention module.
According to claim 2,
The by-product accumulation prevention module
A substrate support unit comprising a plurality of vibrators for applying vibrations having a predetermined period to each of the pin members.
According to claim 3,
The substrate support unit of claim 1 , wherein the vibrator is a piezoelectric actuator.
According to claim 3,
A substrate support unit in which each of the vibrators is individually controlled.
According to claim 1,
wherein the stage clamps the substrate using electrostatic force.
a process chamber providing a substrate processing space;
a substrate support unit disposed in the substrate processing space; and
A plasma generator for generating plasma in the substrate processing space;
The substrate support unit,
a stage on which a substrate is placed;
a pin module protruding from an upper surface of the stage and including a plurality of pin members supporting the substrate; and
A by-product accumulation prevention module coupled to each pin member and preventing process by-products from accumulating on the substrate by applying vibration to each pin member and transmitting the vibration to the substrate,
The substrate processing apparatus wherein the vibration applied to each pin member is independently controlled for each pin member.
According to claim 7,
The by-product accumulation prevention module includes a plurality of vibrators for applying vibration in a vertical direction to each pin member at a predetermined period.
According to claim 8,
The substrate processing apparatus of claim 1, wherein the vibrator is a piezoelectric actuator.
a stage on which a substrate is seated and through which pin holes pass in a vertical direction; lift pins respectively movably provided along the pin holes for loading or unloading the substrate on the stage; a pin driving module for moving the lift pins up and down; And a by-product accumulation prevention module for preventing process by-products from accumulating on the seated substrate using vibration,
The by-product accumulation prevention module applies vibration to the lift pins,
The lift pins, in order to transfer the vibration from the by-product accumulation prevention module to the board on which they are seated, the upper end is maintained at a height in contact with the back surface of the board by the pin driving module.
Substrate support unit.

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