KR102553385B1 - Apparatus for treating substrate - Google Patents

Abstract

Provided is a substrate processing apparatus that controls an electromagnetic field in a chamber by disposing a magnetic material around an electrode. The substrate processing apparatus includes an electrostatic chuck supporting a substrate; a shower head unit disposed above the electrostatic chuck and supplying a process gas for processing a substrate; and a first magnetic material disposed above the shower head unit and controlling an electromagnetic field in a space between the substrate and the shower head unit.

Description

Substrate treatment device {Apparatus for treating substrate}

The present invention relates to an apparatus for processing a substrate. More specifically, it relates to an apparatus for processing a substrate using plasma.

A semiconductor device manufacturing process may be continuously performed in a semiconductor manufacturing facility and may be divided into a pre-process and a post-process. Semiconductor manufacturing facilities may be installed in a space defined as a fab to manufacture semiconductor devices.

The pre-process refers to a process of completing a chip by forming a circuit pattern on a substrate (eg, a wafer). These entire processes include a deposition process of forming a thin film on a substrate, a photo lithography process of transferring a photoresist onto a thin film using a photo mask, and a photolithography process of transferring a desired layer onto a substrate. An etching process that selectively removes unnecessary parts using chemicals or reactive gases to form a circuit pattern, an ashing process that removes photoresist remaining after etching, and an ashing process that is connected to the circuit pattern. It may include an ion implantation process in which ions are implanted into a part to have characteristics of an electronic device, a cleaning process in which contaminants are removed from a substrate, and the like.

The post-process refers to the process of evaluating the performance of the finished product through the previous process. The post-process includes a board inspection process that checks the operation of each chip on the board and sorts out good and bad products, dicing, die bonding, wire bonding, molding, The characteristics and reliability of the product are finally determined through the package process, which cuts and separates each chip through marking to make the product shape, electrical property inspection, and burn-in inspection. It may include the final inspection process to be inspected.

Korean Patent Publication No. 10-2014-0145468 (published date: 2014.12.23.)

In the case of a facility that performs an etching process using plasma, it is possible to improve etching uniformity by controlling an electromagnetic field or impedance in a chamber.

Conventionally, in order to control an electromagnetic field or impedance in a chamber, a structure disposed around an electrode is replaced with another part, or the shape or position of the structure is adjusted. However, this method has limitations in the control area, and side effects such as RF path distortion and power loss due to coupling may be induced during operation of a high power process. .

An object to be solved by the present invention is to provide a substrate processing apparatus that controls an electromagnetic field in a chamber by disposing a magnetic material around an electrode.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

One aspect of the substrate processing apparatus of the present invention for achieving the above object is an electrostatic chuck for supporting a substrate; a shower head unit disposed above the electrostatic chuck and supplying a process gas for processing the substrate; and a first magnetic material disposed above the shower head unit and controlling an electromagnetic field in a space between the substrate and the shower head unit.

The substrate processing apparatus may further include a second magnetic material disposed under the electrostatic chuck and controlling an electromagnetic field in a space between the substrate and the shower head unit.

The first magnetic material may be disposed in one of a center area and an edge area located outside the center area, and the second magnetic material may be disposed in the other area of the center area and the edge area.

The first magnetic body and the second magnetic body may be simultaneously controlled or individually controlled.

The first magnetic material may include a first material having an S pole polarity; and a second material having N pole polarity.

The first material may be disposed on top of the second material, disposed outside the second material, or alternatively disposed outside the second material.

The first magnetic material may include at least one of a permanent magnet and an electromagnet.

The first magnetic material may include an insulating cover protecting a surface from the outside.

Strength of the first magnetic material may be adjusted according to a distance from the substrate.

Another aspect of the substrate processing apparatus of the present invention for achieving the above object is an electrostatic chuck for supporting a substrate; a shower head unit disposed above the electrostatic chuck and supplying a process gas for processing the substrate; and a second magnetic material disposed under the electrostatic chuck and controlling an electromagnetic field in a space between the substrate and the shower head unit.

Details of other embodiments are included in the detailed description and drawings.

1 is a cross-sectional view schematically showing the structure of a substrate processing apparatus according to an embodiment to which the present invention can be applied.
2 is a cross-sectional view schematically showing the structure of a substrate processing apparatus according to another embodiment to which the present invention can be applied.
3 is a diagram schematically showing the internal structure of the substrate processing apparatus according to the first embodiment of the present invention.
4 is a first exemplary view for explaining a polarity arrangement of first magnetic materials constituting a substrate processing apparatus according to various embodiments of the present disclosure.
5 is a second exemplary diagram for explaining a polarity arrangement of first magnetic materials constituting a substrate processing apparatus according to various embodiments of the present disclosure.
6 is a third exemplary diagram for explaining a polarity arrangement of first magnetic materials constituting a substrate processing apparatus according to various embodiments of the present disclosure.
7 is a diagram schematically showing the internal structure of a substrate processing apparatus according to a second embodiment of the present invention.
8 is a diagram schematically showing the internal structure of a substrate processing apparatus according to a third embodiment of the present invention.
9 is a diagram schematically showing the internal structure of a substrate processing apparatus according to a fourth embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention, and methods for achieving them, will become clear with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various different forms, only the present embodiments make the disclosure of the present invention complete, and the common knowledge in the art to which the present invention belongs It is provided to fully inform the holder of the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numbers designate like elements throughout the specification.

When an element or layer is referred to as being "on" or "on" another element or layer, it is not only directly on the other element or layer, but also when another layer or other element is intervening therebetween. All inclusive. On the other hand, when an element is referred to as “directly on” or “directly on”, it indicates that another element or layer is not intervened.

The spatially relative terms "below", "beneath", "lower", "above", "upper", etc. It can be used to easily describe the correlation between elements or components and other elements or components. Spatially relative terms should be understood as encompassing different orientations of elements in use or operation in addition to the orientations shown in the figures. For example, when flipping elements shown in the figures, elements described as “below” or “beneath” other elements may be placed “above” the other elements. Thus, the exemplary term “below” may include directions of both below and above. Elements may also be oriented in other orientations, and thus spatially relative terms may be interpreted according to orientation.

Although first, second, etc. are used to describe various elements, components and/or sections, it is needless to say that these elements, components and/or sections are not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Accordingly, it goes without saying that the first element, first element, or first section referred to below may also be a second element, second element, or second section within the spirit of the present invention.

Terminology used herein is for describing the embodiments and is not intended to limit the present invention. In this specification, singular forms also include plural forms unless specifically stated otherwise in a phrase. As used herein, "comprises" and/or "comprising" means that a stated component, step, operation, and/or element is present in the presence of one or more other components, steps, operations, and/or elements. or do not rule out additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in this specification may be used in a meaning commonly understood by those of ordinary skill in the art to which the present invention belongs. In addition, terms defined in commonly used dictionaries are not interpreted ideally or excessively unless explicitly specifically defined.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, the same or corresponding components regardless of reference numerals are given the same reference numerals, Description is omitted.

The present invention relates to a substrate processing apparatus for controlling an electromagnetic field in a chamber by disposing a magnetic material around an electrode. Hereinafter, the present invention will be described in detail with reference to the drawings and the like.

1 is a cross-sectional view schematically showing the structure of a substrate processing apparatus according to an embodiment to which the present invention can be applied.

According to FIG. 1 , the substrate processing apparatus 100 includes a housing 110, a substrate support unit 120, a plasma generating unit 130, a shower head unit 140, a first gas supply unit 150, a second gas It may include a supply unit 160 , a liner unit 170 , a baffle unit 180 and an upper module 190 .

The substrate processing apparatus 100 processes a substrate W (eg, a wafer) by using a dry etching process in a vacuum environment. The substrate processing apparatus 100 may process the substrate W using, for example, a plasma process, and is implemented as an etching process chamber, a cleaning process chamber, and the like. It can be.

The housing 110 provides a space in which a plasma process is performed. The housing 110 may have an exhaust hole 111 at a lower portion thereof.

The exhaust hole 111 may be connected to the exhaust line 113 in which the pump 112 is mounted. The exhaust hole 111 may discharge reaction by-products generated during the plasma process and gas remaining inside the housing 110 to the outside of the housing 110 through the exhaust line 113 . In this case, the inner space of the housing 110 may be decompressed to a predetermined pressure.

The housing 110 may have an opening 114 formed on its sidewall. The opening 114 may function as a passage through which the substrate W enters and exits the housing 110 . The opening 114 may be configured to be opened and closed by the door assembly 115 .

The door assembly 115 may include an outer door 115a and a door actuator 115b. The outer door 115a is provided on the outer wall of the housing 110 . The outer door 115a may be moved in a vertical direction (ie, in the third direction 30) through the door driver 115b. The door actuator 115b may operate using a motor, hydraulic cylinder, pneumatic cylinder, or the like.

The substrate support unit 120 is installed in the lower inner region of the housing 110 . The substrate support unit 120 may support the substrate W using electrostatic force. However, the present embodiment is not limited thereto. The substrate support unit 120 may support the substrate W in various ways, such as mechanical clamping or vacuum.

When the substrate W is supported using electrostatic force, the substrate support unit 120 may include a base 121 and an electrostatic chuck (ESC) 122 .

The electrostatic chuck 122 is a substrate support member that supports a substrate W to be placed thereon using electrostatic force. The electrostatic chuck 122 may be made of a ceramic material and may be coupled to the base 121 to be fixed on the base 121 .

The electrostatic chuck 122 may be movably installed inside the housing 110 in a vertical direction (ie, in the third direction 30 ) by using a driving member (not shown). When the electrostatic chuck 122 is formed to be movable in the vertical direction as described above, it may be possible to position the substrate W in a region exhibiting a more uniform plasma distribution.

The ring assembly 123 is provided to surround the edge of the electrostatic chuck 122 . The ring assembly 123 may be provided in a ring shape to support the edge area of the substrate W. The ring assembly 123 may include a focus ring 123a and an insulator ring 123b.

The focus ring 123a is formed inside the insulator ring 123b and is provided to surround the electrostatic chuck 122 . The focus ring 123a may be made of silicon, and may focus ions generated during a plasma process onto the substrate W.

The insulator ring 123b is formed outside the focus ring 123a and is provided to surround the focus ring 123a. The insulator ring 123b may be made of a quartz material.

Meanwhile, the ring assembly 123 may further include an edge ring (not shown) formed in close contact with the edge of the focus ring 123a. The edge ring may be formed to prevent side surfaces of the electrostatic chuck 122 from being damaged by plasma.

The first gas supply unit 150 supplies a first gas to remove foreign substances remaining on the top of the ring assembly 123 or on the edge of the electrostatic chuck 122 . The first gas supply unit 150 may include a first gas supply source 151 and a first gas supply line 152 .

The first gas supply source 151 may supply nitrogen gas (N2 Gas) as the first gas. However, the present embodiment is not limited thereto. The first gas supply source 151 can also supply other gases or cleaning agents.

The first gas supply line 152 is provided between the electrostatic chuck 122 and the ring assembly 123 . For example, the first gas supply line 152 may be formed to be connected between the electrostatic chuck 122 and the focus ring 123a.

Meanwhile, the first gas supply line 152 may be provided inside the focus ring 123a and bent to be connected between the electrostatic chuck 122 and the focus ring 123a.

The heating member 124 and the cooling member 125 are provided to maintain the process temperature of the substrate W when an etching process is in progress inside the housing 110 . The heating member 124 may be provided as a heating wire for this purpose, and the cooling member 125 may be provided as a cooling line through which a refrigerant flows.

The heating member 124 and the cooling member 125 may be installed inside the substrate support unit 120 to maintain the substrate W at a process temperature. For example, the heating member 124 may be installed inside the electrostatic chuck 122 and the cooling member 125 may be installed inside the base 121 .

Meanwhile, the cooling member 125 may receive a refrigerant using a chiller 126 . The cooling device 126 may be installed outside the housing 110 .

The plasma generating unit 130 generates plasma from gas remaining in the discharge space. Here, the discharge space means a space located above the substrate support unit 120 in the inner space of the housing 110 .

The plasma generating unit 130 may generate plasma in a discharge space inside the housing 110 using an inductively coupled plasma (ICP) source. In this case, the plasma generating unit 130 may use the antenna unit 193 installed on the upper module 190 as an upper electrode and use the electrostatic chuck 122 as a lower electrode.

However, the present embodiment is not limited thereto. The plasma generating unit 130 may also generate plasma in a discharge space inside the housing 110 using a Capacitively Coupled Plasma (CCP) source. In this case, the plasma generating unit 130 may use the shower head unit 140 as an upper electrode and the electrostatic chuck 122 as a lower electrode, as shown in FIG. 2 . 2 is a cross-sectional view schematically showing the structure of a substrate processing apparatus according to another embodiment to which the present invention can be applied.

It will be described with reference to FIG. 1 again.

The plasma generating unit 130 may include an upper electrode, a lower electrode, an upper power source 131 and a lower power source 133 .

The upper power source 131 applies power to the upper electrode, that is, the antenna unit 193. Such an upper power source 131 may be provided to control the characteristics of plasma. The upper power source 131 may be provided to adjust, for example, ion bombardment energy.

Although a single upper power source 131 is shown in FIG. 1 , it is also possible to include a plurality of upper power sources 131 in this embodiment. When a plurality of upper power sources 131 are provided, the substrate processing apparatus 100 may further include a first matching network (not shown) electrically connected to the plurality of upper power sources.

The first matching network may match frequency powers of different sizes input from each upper power source and apply the matching frequency powers to the antenna unit 193 .

Meanwhile, a first impedance matching circuit (not shown) may be provided on the first transmission line 132 connecting the upper power source 131 and the antenna unit 193 for the purpose of impedance matching.

The first impedance matching circuit may act as a lossless passive circuit to effectively (ie, maximally) transfer electrical energy from the upper power source 131 to the antenna unit 193 .

The lower power source 133 applies power to the lower electrode, that is, the electrostatic chuck 122 . The lower power source 133 may serve as a plasma source for generating plasma or may serve to control characteristics of plasma together with the upper power source 131 .

Although a single lower power supply 133 is shown in FIG. 1 , a plurality of lower power sources 133 may be provided in this embodiment as in the case of the upper power supply 131 . When a plurality of lower power sources 133 are provided, a second matching network (not shown) electrically connected to the plurality of lower power sources may be further included.

The second matching network may match frequency powers of different magnitudes input from each lower power source and apply the matched frequency powers to the electrostatic chuck 122 .

Meanwhile, a second impedance matching circuit (not shown) may be provided on the second transmission line 134 connecting the lower power source 133 and the electrostatic chuck 122 for the purpose of impedance matching.

Like the first impedance matching circuit, the second impedance matching circuit can act as a lossless passive circuit to effectively (ie, maximally) transfer electrical energy from the lower power source 133 to the electrostatic chuck 122 .

The shower head unit 140 may be installed so as to face the electrostatic chuck 122 and the inside of the housing 110 vertically. The shower head unit 140 may have a plurality of gas feeding holes to inject gas into the housing 110, and may have a larger diameter than the electrostatic chuck 122. can Meanwhile, the shower head unit 140 may be made of a silicon material or a metal material.

The second gas supply unit 160 supplies process gas (second gas) into the housing 110 through the shower head unit 140 . The second gas supply unit 160 may include a second gas supply source 161 and a second gas supply line 162 .

The second gas supply source 161 supplies cleaning gas used to process the substrate W and the inside of the housing 110 as a process gas. The second gas supply source 161 may also supply an etching gas used to process the substrate W as a process gas.

A single second gas supply source 161 may be provided to supply process gas to the shower head unit 140 . However, the present embodiment is not limited thereto. A plurality of second gas supply sources 161 may be provided to supply process gas to the shower head unit 140 .

The second gas supply line 162 connects the second gas supply source 161 and the shower head unit 140 . The second gas supply line 162 transfers the process gas supplied through the second gas supply source 161 to the shower head unit 140 so that the process gas can flow into the housing 110 .

Meanwhile, when the shower head unit 140 is divided into a center zone, a middle zone, and an edge zone, the second gas supply unit 160 is the shower head unit 140 A gas distributor (not shown) and a gas distribution line (not shown) may be further included in order to supply process gas to each region.

The gas distributor distributes the process gas supplied from the second gas supply source 161 to each area of the shower head unit 140 . This gas distributor may be connected to the second gas supply source 161 through the second gas supply line 161 .

The gas distribution line connects the gas distributor and each area of the shower head unit 140 . Through the gas distribution line, process gas distributed by the gas distributor may be transferred to each area of the shower head unit 140 .

The liner unit 170 is also called a wall liner, and is used to protect the inner surface of the housing 110 from arc discharge generated during process gas excitation and impurities generated during substrate processing. will be. The liner unit 170 may be provided inside the housing 110 in a cylindrical shape with upper and lower portions respectively open.

The liner unit 170 may be provided adjacent to the inner wall of the housing 110 . The liner unit 170 may have a support ring 171 thereon. The support ring 171 protrudes from the top of the liner unit 170 in an outward direction (ie, in the first direction 10 ), and may be placed on top of the housing 110 to support the liner unit 170 .

The baffle unit 180 serves to exhaust plasma process by-products, unreacted gases, and the like. The baffle unit 180 may be installed between the inner wall of the housing 110 and the substrate support unit 120 .

The baffle unit 180 may be provided in an annular ring shape and may include a plurality of through holes penetrating in a vertical direction (ie, in the third direction 30 ). The baffle unit 180 may control the flow of process gas according to the number and shape of through holes.

The upper module 190 is installed to cover the open top of the housing 110 . This upper module 190 may include a window member 191, an antenna member 192 and an antenna unit 193.

The window member 191 is formed to cover the top of the housing 110 to seal the inner space of the housing 110 . The window member 191 may be provided in a plate (eg, disk) shape, and may be formed of an insulating material (eg, alumina (Al ₂ O ₃ )).

The window member 191 may include a dielectric window. The window member 191 may have a through hole through which the second gas supply line 162 is inserted, and the inside of the housing 110 may be formed. A coating film may be formed on the surface in order to suppress generation of particles when a plasma process is performed.

The antenna member 192 is installed above the window member 191, and a space of a predetermined size may be provided so that the antenna unit 193 can be disposed therein.

The antenna member 192 may be formed in a cylindrical shape with an open bottom, and may be provided to have a diameter corresponding to that of the housing 110 . The antenna member 192 may be detachably attached to the window member 191 .

The antenna unit 193 functions as an upper electrode and is equipped with a coil provided to form a closed loop. The antenna unit 193 generates a magnetic field and an electric field inside the housing 110 based on the power supplied from the upper power source 131, and flows into the housing 110 through the shower head unit 140. It functions to excite gas into plasma.

The antenna unit 193 may be equipped with a planar spiral coil. However, the present embodiment is not limited thereto. The structure or size of the coil may be variously changed by those skilled in the art.

Conventionally, as described above, the electromagnetic field in the chamber is controlled by changing the type, shape, position, etc. of structures disposed around the electrodes. However, this method has limitations in the control area, and side effects such as RF path distortion and power loss due to coupling may be induced during operation of a high power process. .

In this embodiment, in order to solve the above problems, a magnetic material is disposed around the electrode to control the electromagnetic field in the chamber. Hereinafter, this will be described in detail.

3 is a diagram schematically showing the internal structure of the substrate processing apparatus according to the first embodiment of the present invention. The following description refers to FIG. 3 .

The first magnetic material 310 may be disposed on the upper electrode. The first magnetic material 310 may be disposed on the antenna unit 193 when the substrate processing apparatus 100 generates plasma in an inductively coupled plasma (ICP) method, and the substrate processing apparatus 100 may be disposed on the CCP (Capacitively Coupled Plasma) method. In the case of generating plasma in a coupled plasma method, it may be disposed on the shower head unit 140 .

When the first magnetic material 310 is disposed on the upper electrode, it may be installed in a central region of the upper electrode. Since the first magnetic material 310 is formed in this way, a sheath formed on the lower electrode can be expanded to obtain an effect of alleviating a center hot spot phenomenon.

The first magnetic material 310 may be installed in a ring shape in the central region of the upper electrode. At this time, as shown in FIG. 4 , the first magnetic material 310 may be installed so that the material 330 having the S pole polarity is disposed on top of the material 340 having the N pole polarity. 4 is a first exemplary view for explaining a polarity arrangement of first magnetic materials constituting a substrate processing apparatus according to various embodiments of the present disclosure.

However, the present embodiment is not limited thereto. As shown in FIG. 5 , the first magnetic material 310 may be installed so that the material 330 having an S pole polarity is disposed outside the material 340 having an N pole polarity. 5 is a second exemplary diagram for explaining a polarity arrangement of first magnetic materials constituting a substrate processing apparatus according to various embodiments of the present disclosure.

On the other hand, in this embodiment, as shown in FIG. 6, the first magnetic material 310 may be installed so that the material 330 having an S pole polarity and the material 340 having an N pole polarity are alternately disposed outside. do. 6 is a third exemplary diagram for explaining a polarity arrangement of first magnetic materials constituting a substrate processing apparatus according to various embodiments of the present disclosure.

Meanwhile, the first magnetic material 310 may also be installed in a cylindrical shape in the central region of the upper electrode.

It will be described with reference to FIG. 3 again.

The first magnetic body 310 may include any one of a permanent magnet and an electromagnet. However, the present embodiment is not limited thereto. The first magnetic body 310 may also include both permanent magnets and electromagnets.

The second magnetic material 320 may be disposed below the lower electrode. For example, the first magnetic material 310 may be disposed below the electrostatic chuck 122 . In FIG. 3 , an RF rod 350 supplies power to the electrostatic chuck 122 and has a concept corresponding to the second transmission line 134 of FIGS. 1 and 2 .

When the second magnetic material 320 is disposed under the lower electrode, it may be installed in an outer region of the lower electrode. As the second magnetic material 320 is formed in this way, it is possible to control the edge effect according to the utilization of low frequency high power, and accordingly, the edge E-field A mitigating effect can be obtained.

Like the first magnetic body 310, the second magnetic body 320 may be installed in a ring shape below the lower electrode. At this time, as shown in FIG. 4 , the second magnetic material 320 may be installed so that the material 330 having the S pole polarity is disposed on top of the material 340 having the N pole polarity.

However, the present embodiment is not limited thereto. As shown in FIG. 5 , the second magnetic body 320 may be installed so that the material 330 having the S pole polarity is disposed outside the material 340 having the N pole polarity. On the other hand, in this embodiment, as shown in FIG. 6, the second magnetic body 320 may be installed so that the material 330 having an S pole polarity and the material 340 having an N pole polarity are alternately disposed outside. do.

Meanwhile, the second magnetic body 320 may also be formed in a cylindrical shape like the first magnetic body 310 .

It will be described with reference to FIG. 3 again.

Like the first magnetic body 310, the second magnetic body 320 may include any one of a permanent magnet and an electromagnet. However, the present embodiment is not limited thereto. The first magnetic body 310 may also include both permanent magnets and electromagnets.

Meanwhile, in the present embodiment, it is also possible to additionally install an Edge Block Impedance Control (EBIC) 360 in a structure disposed on the side of the electrostatic chuck 122 . The EBIC 360 serves as an electrode and may be formed as a metal electrode using a metal component as a material. When the EBIC 360 is installed in the ring assembly 123, it is possible to control the electric field in the edge region, and accordingly, the etch asymmetry and uniformity of the edge region can be controlled.

The substrate processing apparatus 100 may control plasma generated inside the housing 110 by including the first magnetic body 310 and the second magnetic body 320 described above with reference to FIGS. 3 to 6, Accordingly, it is possible to control the electromagnetic field for each region. The substrate processing apparatus 100 may obtain an effect of improving etch uniformity inside the housing 110 through this.

Since the charged particle along the magnetic flux line rotates, it is possible to relieve the area with relatively strong etch rate through plasma confinement, and strengthen the directionality. And the effect of improving the etching rate through the increase in density can also be obtained.

As described with reference to FIG. 3 , the substrate processing apparatus 100 includes a first magnetic body 310 disposed in the upper central region of the upper electrode and a second magnetic body 320 disposed in the lower outer region of the lower electrode. It can be.

However, the present embodiment is not limited thereto. As shown in FIG. 7 , the first magnetic material 310 may be disposed in an upper outer region of the upper electrode, and the second magnetic material 320 may be disposed in a lower central region of the lower electrode. That is, in this embodiment, when the substrate processing apparatus 100 includes the first magnetic body 310 and the second magnetic body 320, in order to control the plasma throughout the housing 110, the first magnetic body 310 ) and the second magnetic material 320 may be disposed in different regions. 7 is a diagram schematically showing the internal structure of a substrate processing apparatus according to a second embodiment of the present invention.

Meanwhile, the substrate processing apparatus 100 may include only one of the first magnetic body 310 and the second magnetic body 320 as shown in FIGS. 8 and 9 . 8 is a view schematically showing the internal structure of a substrate processing apparatus according to a third embodiment of the present invention, and FIG. 9 is a view schematically showing the internal structure of a substrate processing apparatus according to a fourth embodiment of the present invention. am.

Meanwhile, when the substrate processing apparatus 100 includes both the first magnetic body 310 and the second magnetic body 320, the first magnetic body 310 and the second magnetic body 320 may be simultaneously controlled. However, the present embodiment is not limited thereto. The first magnetic body 310 and the second magnetic body 320 may be individually controlled.

Meanwhile, the shape and polarity of the first magnetic body 310 and the second magnetic body 320 may be selected according to the required B-field shape. At this time, in order to minimize the distortion of the induced B field and the influence of surrounding structures, metal particles, etc., the first magnetic body 310 and the second magnetic body 320 are protected by an insulating cover (not shown). can

On the other hand, in order to improve the etching rate through local and fine control, the field strength on the surface of the substrate W, where etching is performed, must be induced to a level of less than 100 Gauss. In this embodiment, the strength of the magnetic material can be selectively adjusted according to the distance between the substrate W and the magnetic material (the first magnetic material 310 and/or the second magnetic material 320) so that the low field strength can be induced. .

Meanwhile, as described above, the first magnetic body 310 and the second magnetic body 320 may include at least one of a permanent magnet and an electromagnet. In the case of facilitating the mounting of the magnet and the influence of other structures, permanent magnets may be used as the first magnetic body 310 and the second magnetic body 320, and in case of controlling the fine field strength, the first magnetic body 310 And the second magnetic body 320 may use an electromagnet.

Although the embodiments of the present invention have been described with reference to the above and accompanying drawings, those skilled in the art to which the present invention pertains can implement the present invention in other specific forms without changing the technical spirit or essential features. You will understand that there is Therefore, the embodiments described above should be understood as illustrative in all respects and not limiting.

100: substrate processing device 110: housing
120: substrate support unit 122: electrostatic chuck
123: ring assembly 123a: focus ring
123b: insulator ring 130: plasma generating unit
140: shower head unit 160: second gas supply unit
190: upper module 193: antenna unit
310: first magnetic body 320: second magnetic body
330: material having S pole polarity 340: material having N pole polarity
350: RF load 360: EBIC

Claims (10)

an electrostatic chuck supporting the substrate;
a shower head unit disposed above the electrostatic chuck and supplying a process gas for processing the substrate;
a first magnetic material disposed above the shower head unit and controlling an electromagnetic field in a space between the substrate and the shower head unit; and
A second magnetic material disposed under the electrostatic chuck and controlling an electromagnetic field in a space between the substrate and the shower head unit;
The substrate processing apparatus of claim 1 , wherein strengths of the first magnetic body and the second magnetic body are adjusted according to a distance from the substrate. delete According to claim 1,
The first magnetic material is disposed in any one of a center area and an edge area located outside the center area,
The second magnetic material is disposed in the other one of the center region and the edge region. According to claim 1,
The first magnetic body and the second magnetic body are simultaneously controlled or individually controlled. According to claim 1,
The first magnetic body,
a first material having an south pole polarity; and
A substrate processing apparatus comprising a second material having an N-pole polarity. According to claim 5,
The substrate processing apparatus of claim 1 , wherein the first material is disposed on top of the second material, outside the second material, or alternately outside the second material. According to claim 1,
The first magnetic material includes at least one of a permanent magnet and an electromagnet. According to claim 1,
The substrate processing apparatus of claim 1, wherein the first magnetic body includes an insulating cover protecting a surface from the outside. delete an electrostatic chuck supporting the substrate;
a shower head unit disposed above the electrostatic chuck and supplying a process gas for processing the substrate;
a first magnetic material disposed above the shower head unit and controlling an electromagnetic field in a space between the substrate and the shower head unit; and
A second magnetic material disposed under the electrostatic chuck and controlling an electromagnetic field in a space between the substrate and the shower head unit;
At least one magnetic body of the first magnetic body and the second magnetic body,
a first material having an south pole polarity; and
Including a second material having an N-pole polarity,
The first material and the second material are alternately disposed outside the substrate processing apparatus.

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