KR20230063980A - Electrostatic chuck and manufacturing method of electrostatic chuck - Google Patents

Abstract

According to the present invention, an electrostatic chuck including a protective layer for protecting a bonding layer bonding a base member and a chucking member and a manufacturing method thereof are provided. The protective layer is coated on the outer surface of the bonding layer by atomic layer deposition and has a thickness of 1 μm or less. The protective layer is formed of a material having excellent etch resistance, so that the bonding layer may be prevented from being etched. Since the protective layer is formed to a very thin thickness and protects the bonding layer without affecting surrounding components, an electrostatic chuck with improved durability and performance and a manufacturing method thereof can be provided.

Description

Electrostatic chuck and electrostatic chuck manufacturing method

The present invention relates to an electrostatic chuck for fixing a position of a substrate during substrate processing and a manufacturing method thereof.

A semiconductor device can be manufactured by forming a predetermined pattern on a substrate. When forming a predetermined pattern on a substrate, a number of processes, such as a deposition process, a lithography process, and an etching process, can be continuously performed in equipment used in a semiconductor manufacturing process. .

A dry etching process used to fabricate a semiconductor device may be performed in a plasma reaction chamber. An electrostatic chuck such as an electro-static chuck (ESC) may be installed in the plasma reaction chamber to support a substrate (eg, a wafer).

The electrostatic chuck may include a bonding layer between the base member and the chucking member to bond the aluminum base member and the ceramic chucking member.

However, when the etching process for the substrate is performed in the plasma reaction chamber, if the bonding layer is exposed to etching gas, the bonding layer may be etched by the etching gas, and particles generated at this time may cause damage to the substrate. Quality may deteriorate. In addition, if the bonding layer is damaged due to etching, the bonding between the base member and the chucking member becomes unstable, so that the original chucking role of the electrostatic chuck cannot be properly performed, resulting in arc generation or loss of the electrostatic chuck function. It can be. In this case, it may be required to discard the damaged electrostatic chuck and replace it with a newly manufactured electrostatic chuck.

In this way, the etching of the bonding layer may affect the performance of the electrostatic chuck and shorten the life of the electrostatic chuck. This has a problem of increasing the manufacturing cost of the semiconductor manufacturing process.

Republic of Korea Patent Publication No. 10-2015-0128220

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and an object of the present invention is to provide an electrostatic chuck and a method of manufacturing the same with improved lifespan by suppressing etching of a bonding layer bonding a base member and a chucking member.

In addition, the present invention is intended to provide an electrostatic chuck that is easy to manufacture and manage and has improved durability and performance, and a method for manufacturing the same.

The object of the present invention is not limited to the above, and other objects and advantages of the present invention not mentioned can be understood by the following description.

According to an embodiment of the present invention, a method for manufacturing an electrostatic chuck may be provided. The manufacturing method of the electrostatic chuck may include preparing a base member and a chucking member; Bonding between the base member of the lower part and the chucking member of the upper part by a bonding layer; A step of coating a protective layer (thin film layer) on an outer surface of the bonding layer by atomic layer deposition may be included. The upper surface of the base member and the lower surface of the chucking member are formed in sizes corresponding to each other, the bonding layer is uniformly provided between the base member and the chucking member as a whole, and the protective layer is formed between the base member and the chucking member. It may be provided along the outer surface (circumferential surface) of the bonding layer exposed through the gap to surround the bonding layer.

In one embodiment, in the step of coating the protective layer, the protective layer may be formed to a thickness of 1 μm or less by using an etch-resistant material.

In one embodiment, the coating of the protective layer may form the same height of the protective layer as the height of the bonding layer.

In one embodiment, the coating of the protective layer may form a height of the protective layer greater than a height of the bonding layer.

In one embodiment, in the coating of the protective layer, the protective layer may be formed to a height that protects both the side surface of the base member and the side surface of the chucking member.

In one embodiment, the bonding layer may include a material that compensates for thermal expansion of the base member and the chucking member bonded to each other.

According to one embodiment of the present invention, the base member; a chucking member mounted on the base member; a bonding layer between the base member and the chucking member; An electrostatic chuck may include a protective layer formed along an outer surface of the bonding layer to protect the bonding layer, wherein the protective layer is a coating layer formed by an atomic layer deposition method.

In one embodiment, the protective layer may have a thickness of 1 μm or less.

In one embodiment, the protective layer may be formed in a size to cover both the side surface of the base member and the side surface of the chucking member.

In one embodiment, the bonding layer may include at least one of epoxy and PTFE capable of supplementing thermal expansion of the base member and the chucking member.

According to one embodiment of the present invention, the housing; a shower head unit installed inside the housing and supplying a process gas for processing a substrate into the housing; an electrostatic chuck installed below the shower head unit inside the housing and including a chucking member mounted on the base member through a base member and a bonding layer; and a plasma generation unit generating plasma using the process gas to process the substrate, and the electrostatic chuck is coated with an etch-resistant material on an outer surface of the bonding layer by atomic layer deposition to process the bonding layer. A substrate processing apparatus further comprising a protective layer for protecting may be provided.

According to an embodiment of the present invention, etching of the bonding layer by plasma can be suppressed by forming a protective layer of a material having corrosion resistance on the side surface of the bonding layer disposed between the base member and the chucking member. Accordingly, performance degradation of the electrostatic chuck can be suppressed and life time can be greatly improved.

In addition, according to an embodiment of the present invention, since the protective layer is coated by atomic layer deposition, it is formed to a very thin thickness of 1 μm or less, so that it does not affect the structure around the electrostatic chuck and has a dense film structure without pores or cracks. A protective layer having may be formed.

In addition, by forming the bonding layer with a material capable of compensating for thermal expansion of the base member and the chucking member, it is possible to provide an electrostatic chuck with further improved durability and performance.

However, the effects of the present invention are not limited to those mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description below.

1 is a cross-sectional view schematically showing the structure of a substrate processing apparatus according to an embodiment of the present invention.
2 is a cross-sectional view schematically showing the structure of a substrate processing apparatus according to another embodiment of the present invention.
3 is a cross-sectional view illustrating an electrostatic chuck according to an embodiment of the present invention.
4 is a view for explaining a process of forming the protective layer of FIG. 3 of the present invention.
5 is a flowchart illustrating a method of manufacturing an electrostatic chuck according to an embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. However, the present invention may be embodied in many different forms and is not limited to the embodiments described herein.

In describing the embodiments of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description will be omitted, and parts with similar functions and actions will be omitted. The same reference numerals will be used throughout the drawings.

Since at least some of the terms used in the specification are defined in consideration of functions in the present invention, they may vary according to user, operator intention, custom, and the like. Therefore, the term should be interpreted based on the contents throughout the specification.

Also, in this specification, the singular form also includes the plural form unless otherwise specified in the phrase. In the specification, when it is said to include a certain component, this means that it may further include other components without excluding other components unless otherwise stated. And, when a part is said to be connected (or combined) with another part, this is not only directly connected (or combined), but also indirectly connected (or combined) through another part. include

On the other hand, in the drawing, the size or shape of the component, the thickness of the line, etc. may be expressed somewhat exaggerated for convenience of understanding.

Embodiments of the invention are described with reference to schematic illustrations of idealized embodiments of the invention. Accordingly, variations from the shape of the illustration, eg, variations in manufacturing method and/or tolerances, are fully expected. Accordingly, embodiments of the present invention are not to be described as being limited to specific shapes of regions illustrated as diagrams, but to include variations in shape, and elements described in the figures are purely schematic and their shapes are elements. It is not intended to describe the exact shape of them, nor is it intended to limit the scope of the present invention.

When an element or layer is referred to as being "on" or "on" another element or layer, it is not only directly on the other element or layer, but also when another layer or other element is intervening therebetween. all inclusive On the other hand, when an element is referred to as “directly on” or “directly on”, it indicates that another element or layer is not intervened.

The spatially relative terms "below", "beneath", "lower", "above", "upper", etc. It can be used to easily describe the correlation between elements or components and other elements or components. Spatially relative terms should be understood as encompassing different orientations of elements in use or operation in addition to the orientations shown in the figures. For example, when flipping elements shown in the figures, elements described as “below” or “beneath” other elements may be placed “above” the other elements. Thus, the exemplary term “below” may include directions of both below and above. Elements may also be oriented in other orientations, and thus spatially relative terms may be interpreted according to orientation.

Although first, second, etc. are used to describe various elements, components and/or sections, it is needless to say that these elements, components and/or sections are not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Accordingly, it goes without saying that the first element, first element, or first section referred to below may also be a second element, second element, or second section within the spirit of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, the same or corresponding components regardless of reference numerals are given the same reference numerals, Description is omitted.

The present invention relates to a protective layer for protecting a bonding layer for bonding a base member and a chucking member from etching gas and plasma, an electrostatic chuck including the same, and a manufacturing method thereof. In particular, the present invention relates to a protective layer made of a material having excellent etching resistance to prevent etching of a bonding layer, an electrostatic chuck including the protective layer, and a manufacturing method thereof. Hereinafter, the present invention will be described in detail with reference to drawings and the like.

1 is a cross-sectional view schematically showing the structure of a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1 , the substrate processing apparatus 100 includes a housing 110, a substrate support unit 120, a plasma generating unit 130, a shower head unit 140, and a first gas supply unit. 150, a second gas supply unit 160, a wall liner unit 170, a baffle unit 180, and an upper module 190.

The substrate processing apparatus 100 is a system that processes a substrate W (eg, a wafer) by using an etching process (eg, a dry etching process) in a vacuum environment. The substrate processing apparatus 100 may process the substrate W using, for example, a plasma process.

The housing 110 provides a space in which a plasma process is performed. The housing 110 may have an exhaust hole 111 at a lower portion thereof.

The exhaust hole 111 may be connected to the exhaust line 113 in which the pump 112 is mounted. The exhaust hole 111 may discharge reaction by-products generated during the plasma process and gas remaining inside the housing 110 to the outside of the housing 110 through the exhaust line 113 . In this case, the inner space of the housing 110 may be decompressed to a predetermined pressure.

The housing 110 may have an opening 114 formed on its sidewall. The opening 114 may function as a passage through which the substrate W enters and exits the housing 110 . The opening 114 may be configured to be opened and closed by the door assembly 115 .

The door assembly 115 may include an outer door 115a and a door actuator 115b. The outer door 115a is provided on the outer wall of the housing 110 . The outer door 115a may be moved in a vertical direction (ie, in the third direction 30) through the door driver 115b. The door actuator 115b may operate using a motor, hydraulic cylinder, pneumatic cylinder, or the like.

The substrate support unit 120 is installed in the lower inner region of the housing 110 . The substrate support unit 120 may support the substrate W using electrostatic force. However, the present embodiment is not limited thereto. The substrate support unit 120 may support the substrate W in various ways such as mechanical clamping or vacuum.

The substrate support unit 120 is an electro-static chuck (ESC) including a base component 121 and a chucking component 122 when supporting the substrate W by using electrostatic force. can be implemented as

The base member 121 supports the chucking member. The base member 121 may be made of, for example, an aluminum component and provided as an aluminum base plate.

The chucking member 122 supports the substrate W to be placed thereon using electrostatic force. The chucking member 122 may be made of a ceramic component and provided as a ceramic plate or a ceramic puck, and is coupled to the base member 121 to be fixed on the base member 121 It can be.

A bonding layer may be formed between the base member 121 and the chucking member 122 formed thereon, and a protective layer may be installed around the outside to protect the bonding layer. A more detailed description of the bonding layer and the protective layer will be described later.

The chucking member 122 may be installed to be movable in the vertical direction (ie, in the third direction 30) inside the housing 110 by using a driving member (not shown). When the chucking member 122 is formed to be movable in the vertical direction, it may be possible to position the substrate W in a region showing a more uniform plasma distribution.

The ring assembly 123 is provided to surround the rim of the chucking member 122 . The ring assembly 123 may be provided in a ring shape to support the edge area of the substrate W. The ring assembly 123 may include a focus ring 123a and an insulating ring 123b.

The focus ring 123a is formed inside the insulating ring 123b and surrounds the chucking member 122 . The focus ring 123a may be made of silicon and may focus plasma onto the substrate W.

The insulating ring 123b is formed outside the focus ring 123a and is provided to surround the focus ring 123a. The insulating ring 123b may be made of a quartz material.

Meanwhile, the ring assembly 123 may further include an edge ring (not shown) formed in close contact with the edge of the focus ring 123a. The edge ring may be formed to prevent the side surface of the chucking member 122 from being damaged by plasma.

The first gas supply unit 150 supplies a first gas to remove foreign substances remaining on the top of the ring assembly 123 or on the rim of the chucking member 122 . The first gas supply unit 150 may include a first gas supply source 151 and a first gas supply line 152 .

The first gas supply source 151 may supply nitrogen gas (N2 gas) as the first gas. However, the present embodiment is not limited thereto. The first gas supply source 151 can also supply other gases or cleaning agents.

The first gas supply line 152 is provided between the chucking member 122 and the ring assembly 123 . For example, the first gas supply line 152 may be formed to be connected between the chucking member 122 and the focus ring 123a.

Meanwhile, the first gas supply line 152 may be provided inside the focus ring 123a and bent to be connected between the chucking member 122 and the focus ring 123a.

The heating member 124 and the cooling member 125 are provided to maintain the process temperature of the substrate W when an etching process is in progress inside the housing 110 . The heating member 124 may be provided as a heating wire for this purpose, and the cooling member 125 may be provided as a cooling line through which a refrigerant flows.

The heating member 124 and the cooling member 125 may be installed inside the electrostatic chuck 120 to maintain the substrate W at a process temperature. For example, the heating member 124 may be installed inside the chucking member 122 and the cooling member 125 may be installed inside the base member 121 .

Meanwhile, the cooling member 125 may receive a refrigerant using a chiller 126 . The cooling device 126 may be installed outside the housing 110 .

The plasma generating unit 130 generates plasma from gas remaining in the discharge space. Here, the discharge space means a space located above the electrostatic chuck 120 in the inner space of the housing 110 .

The plasma generating unit 130 may generate plasma in a discharge space inside the housing 110 using an inductively coupled plasma (ICP) source. In this case, the plasma generating unit 130 may use an antenna unit 193 installed on the upper module 190 as an upper electrode and use the electrostatic chuck 120 as a lower electrode.

However, the present embodiment is not limited thereto. The plasma generating unit 130 may also generate plasma in a discharge space inside the housing 110 using a Capacitively Coupled Plasma (CCP) source. In this case, the plasma generating unit 130 may use the shower head unit 140 as an upper electrode and the electrostatic chuck 120 as a lower electrode, as shown in FIG. 2 . 2 is a cross-sectional view schematically showing the structure of a substrate processing apparatus according to another embodiment of the present invention.

It will be described with reference to FIG. 1 again.

The plasma generating unit 130 may include an upper electrode, a lower electrode, an upper power source 131 and a lower power source 133 .

The upper power source 131 applies power to the upper electrode, that is, the antenna unit 193. Such an upper power source 131 may be provided to control the characteristics of plasma. The top power source 131 may be provided to adjust ion bombardment energy, for example.

Although a single upper power source 131 is shown in FIG. 1 , it is also possible to include a plurality of upper power sources 131 in this embodiment. When a plurality of upper power sources 131 are provided, the substrate processing apparatus 100 may further include a first matching network (not shown) electrically connected to the plurality of upper power sources.

The first matching network may match frequency powers of different sizes input from each upper power source and apply the matching frequency powers to the antenna unit 193 .

Meanwhile, a first impedance matching circuit (not shown) may be provided on the first transmission line 132 connecting the upper power source 131 and the antenna unit 193 for the purpose of impedance matching.

The first impedance matching circuit may act as a lossless passive circuit to effectively (ie, maximally) transfer electrical energy from the upper power source 131 to the antenna unit 193 .

The lower power source 133 applies power to the lower electrode, that is, the electrostatic chuck 120 . The lower power source 133 may serve as a plasma source for generating plasma or may serve to control characteristics of plasma together with the upper power source 131 .

Although a single lower power supply 133 is shown in FIG. 1 , a plurality of lower power sources 133 may be provided in this embodiment as in the case of the upper power supply 131 . When a plurality of lower power sources 133 are provided, a second matching network (not shown) electrically connected to the plurality of lower power sources may be further included.

The second matching network may match frequency powers of different magnitudes input from each lower power source and apply the matched frequency powers to the electrostatic chuck 120 .

Meanwhile, a second impedance matching circuit (not shown) may be provided on the second transmission line 134 connecting the lower power source 133 and the electrostatic chuck 120 for the purpose of impedance matching.

Like the first impedance matching circuit, the second impedance matching circuit can act as a lossless passive circuit to effectively (ie, maximally) transfer electrical energy from the lower power source 133 to the electrostatic chuck 120 .

The shower head unit 140 may be vertically opposed to the electrostatic chuck 120 inside the housing 110 . The shower head unit 140 may include a plurality of gas feeding holes 141 to inject gas into the housing 110, and have a larger diameter than the electrostatic chuck 120. can be provided.

Meanwhile, the shower head unit 140 may be made of a silicon component, or may be made of a metal component.

The second gas supply unit 160 supplies process gas (second gas) into the housing 110 through the shower head unit 140 . The second gas supply unit 160 may include a second gas supply source 161 and a second gas supply line 162 .

The second gas supply source 161 supplies an etching gas used to process the substrate W as a process gas. The second gas supply source 161 may supply a gas containing a fluorine component (eg, a gas such as SF6 or CF4) as an etching gas.

A single second gas supply source 161 may be provided to supply etching gas to the shower head unit 140 . However, the present embodiment is not limited thereto. A plurality of second gas supply sources 161 may be provided to supply process gas to the shower head unit 140 .

The second gas supply line 162 connects the second gas supply source 161 and the shower head unit 140 . The second gas supply line 162 transfers the process gas supplied through the second gas supply source 161 to the shower head unit 140 so that the etching gas can flow into the housing 110 .

Meanwhile, when the shower head unit 140 is divided into a center zone, a middle zone, and an edge zone, the second gas supply unit 160 is the shower head unit 140 A gas distributor (not shown) and a gas distribution line (not shown) may be further included in order to supply process gas to each region.

The gas distributor distributes the process gas supplied from the second gas supply source 161 to each area of the shower head unit 140 . This gas distributor may be connected to the second gas supply source 161 through the second gas supply line 161 .

The gas distribution line connects the gas distributor and each area of the shower head unit 140 . Through the gas distribution line, process gas distributed by the gas distributor may be transferred to each area of the shower head unit 140 .

Meanwhile, the second gas supply unit 160 may further include a third gas supply source (not shown) for supplying deposition gas.

The third gas supply source is supplied to the shower head unit 140 to protect the side surface of the substrate W pattern and enable anisotropic etching. The second gas supply source may supply a gas such as C4F8 or C2F4 as a deposition gas.

The wall liner unit 170 protects the inner surface of the housing 110 from arc discharge generated during process gas excitation and impurities generated during a substrate processing process. The wall liner unit 170 may be provided inside the housing 110 in a cylindrical shape with upper and lower portions open.

The wall liner unit 170 may be provided adjacent to the inner wall of the housing 110 . The wall liner unit 170 may have a support ring 171 thereon. The support ring 171 protrudes from the top of the wall liner unit 170 in an outward direction (ie, in the first direction 10) and is placed on the top of the housing 110 to support the wall liner unit 170. there is.

The baffle unit 180 serves to exhaust plasma process by-products, unreacted gases, and the like. The baffle unit 180 may be installed between the inner wall of the housing 110 and the electrostatic chuck 120 . The baffle unit 180 may be provided in an annular ring shape, and may include a plurality of through holes penetrating in a vertical direction (ie, a third direction (30)). The baffle unit 180 may control the flow of process gas according to the number and shape of through holes.

The upper module 190 is installed to cover the open top of the housing 110 . This upper module 190 may include a window member 191, an antenna member 192 and an antenna unit 193.

The window member 191 is formed to cover the top of the housing 110 to seal the inner space of the housing 110 . The window member 191 may be provided in a plate (eg, disk) shape, and may be formed of an insulating material (eg, alumina (Al ₂ O ₃ )).

The window member 191 may include a dielectric window. The window member 191 may have a through hole through which the second gas supply line 162 is inserted, and may be formed inside the housing 110. A coating film may be formed on the surface in order to suppress generation of particles when a plasma process is performed.

The antenna member 192 is installed above the window member 191, and a space of a predetermined size may be provided so that the antenna unit 193 can be disposed therein.

The antenna member 192 may be formed in a cylindrical shape with an open bottom, and may be provided to have a diameter corresponding to that of the housing 110 . The antenna member 192 may be detachably attached to the window member 191 .

The antenna unit 193 functions as an upper electrode and is equipped with a coil provided to form a closed loop. The antenna unit 193 generates a magnetic field and an electric field inside the housing 110 based on the power supplied from the upper power source 131, and flows into the housing 110 through the shower head unit 140. It functions to excite gas into plasma.

The antenna unit 193 may be equipped with a planar spiral coil. However, the present embodiment is not limited thereto. The structure or size of the coil may be variously changed by those skilled in the art.

Next, the protective layer that protects the bonding layer will be described.

3 is a diagram for explaining an electrostatic chuck according to an embodiment of the present invention.

Referring to FIG. 3 , the electrostatic chuck 120 includes a base member 121 and a chucking member 122, a bonding layer 210 between the base member 121 and the chucking member 122, and a protective layer 220. can do.

In the electrostatic chuck according to an embodiment of the present invention, the upper surface of the base member 120 and the lower surface of the chucking member 120 may have the same area. However, the present embodiment is not limited thereto.

The bonding layer 210 is for bonding the base member 121 and the chucking member 122 together. For example, the base member 121 may be an Al-based base plate, and the chucking member may be Al ₂ O ₃ -based ESC Ceramics. The bonding layer 210 may be formed using a silicon component as a material. However, the present embodiment is not limited thereto. In addition to the silicone component, the bonding layer 210 may be formed of another component having adhesive strength capable of effectively bonding the base member 121 and the chucking member 122 to each other. For example, the bonding layer 210 may include at least one of materials such as Epoxy and PTFE, which can compensate for thermal expansion of the base member 121 and the chucking member 122 .

The bonding layer 210 may be formed to have an area corresponding to an upper area of the base member between the base member 121 and the chucking member 122 . Alternatively, although not shown in detail, the bonding layer 210 may be formed to have a smaller area than the upper surface of the base member 121 . The bonding layer 210 may be formed in a center region between the base member 121 and the chucking member 122 .

The protective layer 220 serves to protect the bonding layer 210 from etching. Accordingly, the protective layer 220 may be formed to surround the side surface of the bonding layer 210 . Specifically, it may be formed on the outer surface, which is the exposed surface of the bonding layer 210, to protect the bonding layer 210. The protective layer 220 may be formed in a band shape (or ring shape) surrounding the bonding layer 210 .

The protective layer 220 should cover the bonding layer 210 without pores and cracks and should be formed of a material having plasma resistance (corrosion resistance). For example, the protective layer may be formed of alumina (Al ₂ O ₃ ) material having excellent etching resistance. In addition, it is desirable to be formed so as not to affect components disposed adjacent to the electrostatic chuck 120 .

4 is a diagram for explaining a process of forming the protective layer 220 .

The protective layer 220 may be coated on the outer surface of the bonding layer 210 by atomic layer deposition (ALD).

Atomic layer deposition (ALD) is a method that can apply a highly uniform coating to the surface of an object. In particular, ALD is a very suitable technique for coating three-dimensional structures. ALD can create a film on the surface of an object by alternating an adsorption step and a substitution step, and is characterized by forming one layer of film per cycle due to self-limitation characteristics. For example, when a precursor is supplied to an object, adsorption occurs on the surface of the object, and then when a reactant is supplied, a chemical substitution between the precursor and the reactant occurs to form a layer of film on the surface of the object. The film formed by the atomic layer deposition method is characterized by being very dense, homogeneous and thin.

The protective layer 220 coated by the atomic layer deposition method may have a dense film structure without pores or cracks while being formed to a very thin thickness of 1 μm or less. Accordingly, the bonding layer 210 can be protected while having excellent corrosion resistance and not affecting components (eg, a ring assembly, etc.) adjacent to the electrostatic chuck 210 due to its small thickness.

The protective layer 220 may be formed to protect the side surfaces of the base member 121 and the chucking member 122 together. That is, the protective layer 220 may be formed to have a height greater than that of the bonding layer 210 . When the protective layer 220 is formed in this way, etching of the side surface of the electrostatic chuck 120 can be prevented. In addition, it is possible to prevent (prevent) the etching gas from penetrating into the bonding layer 210 along the upper side of the base member 120, and to penetrate into the bonding layer 210 along the lower side of the chucking member 122. can prevent (prevent)

Meanwhile, the protective layer 220 may be formed to have the same height as that of the bonding layer 210 .

In this way, it is preferable that the height of the protective layer 220 is equal to or greater than that of the bonding layer 210 . That is, the height H2 of the protective layer 220 is preferably greater than or equal to the height H1 of the space between the base member 121 and the chucking member 122 (H2 ≥ H1).

5 is a flowchart illustrating a method of manufacturing an electrostatic chuck 120 according to an embodiment of the present invention.

Referring to FIG. 5 , the method of manufacturing the electrostatic chuck 120 according to an embodiment of the present invention includes a member preparation step ( S11 ), a joining step ( S12 ), and a protective layer forming step ( S13 ).

The member preparation step (S11) is a step of preparing a base member and a chucking member. At this time, members for forming the bonding layer should also be provided. The bonding layer is preferably made of a material that can compensate for thermal expansion of the base member and the chucking member.

The bonding step (S12) is a step of bonding the base member and the chucking member by injecting a bonding layer into the space between the base member and the chucking member. For example, the bonding layer may be a material including at least one of materials such as silicon, epoxy, and PTFE. The bonding layer firmly bonds the base member and the chucking member so that the electrostatic chuck properly performs a chucking role during a process. If the bonding layer is made of a material such as epoxy or PTFE that can compensate for thermal expansion of the base member and the chucking member, the base member and the chucking member can be bonded without gaps, thereby forming a substrate support member with improved durability.

The protective layer forming step (S13) is a step of coating the side of the bonding layer, which is an exposed portion of the bonding layer, with a material having excellent etching resistance (eg, Al ₂ O ₃ ). The protective layer forming step (S13) may be performed by atomic layer deposition. According to the atomic layer deposition, the protective layer can be formed with a very thin thickness of 1 μm or less and at the same time, a strong protective layer without pores or cracks. The protective layer may prevent damage to the bonding layer by preventing etching of the bonding layer. The protective layer may be formed at the same height as that of the bonding layer. Alternatively, it may be formed to have a height greater than that of the bonding layer.

When the protective layer is formed to have a height greater than that of the bonding layer, the protective layer may be formed to protect even the sides of the base member and the chucking member. That is, the protective layer may be coated on all sides of the base member, bonding layer, and chucking member by atomic layer deposition. If the protective layer is formed to protect the entire side surface of the substrate supporting member, the effect of protecting the bonding layer can be further improved. This is because the etching gas can be prevented from penetrating into the bonding layer 210 along the upper side of the base member 120 or into the bonding layer 210 along the lower side of the chucking member 122 .

The electrostatic chuck 120 and its manufacturing method according to the present embodiment have been described above with reference to FIGS. 3 to 5 . An electrostatic chuck 120 according to an embodiment of the present invention includes a protective layer 220 . The protective layer 220 is a protective band formed to protect the exposed portion of the bonding layer 210 formed between the base member 121 and the chucking member 122 in the electrostatic chuck 120 . The protective layer 220 is coated on the side surface of the bonding layer 210 by atomic layer deposition and is formed of a material having excellent etch resistance. In addition, it may be formed to protect even the sides of the base member 121 and the chucking member 122 . Since the protective layer 220 according to an embodiment of the present invention can be formed very thinly by atomic layer deposition, it is located between the base member 121 and the chucking member 122 without affecting surrounding components at all. By protecting the bonding layer 210 disposed on the bonding layer 210, it is possible to prevent problems such as ESC separation and damage particle generation caused by etching of the bonding layer 210.

Although described above with reference to the limited embodiments and drawings, these are only examples, and it will be apparent to those skilled in the art that various modifications and implementations are possible within the scope of the technical idea of the present invention. All or part of each embodiment may be selectively combined and implemented. Therefore, the protection scope of the present invention should be defined by the description of the claims and their equivalents.

100: substrate processing device
110: housing
120: electrostatic chuck (substrate support unit)
121: base member
122: chucking member
130: plasma generating unit
140: shower head unit
150: first gas supply unit
160: second gas supply unit
170: wall liner unit
180: baffle unit
190: upper module
210: bonding layer
220: protective layer

Claims (12)

preparing a lower base member and an upper chucking member;
bonding the prepared base member and the chucking member by a bonding layer between them;
coating a protective layer by atomic layer deposition along an outer surface of the bonding layer between the bonded base member and the chucking member;
A method of manufacturing an electrostatic chuck comprising a.
According to claim 1,
In the step of coating the passivation layer, the passivation layer is formed to a thickness of 1 μm or less using an etch-resistant material.
According to claim 2,
In the step of coating the protective layer, the height of the protective layer is the same as that of the bonding layer.
According to claim 2,
In the coating of the protective layer, the protective layer is formed to have a height greater than that of the bonding layer.
According to claim 4,
In the step of coating the protective layer, the protective layer is formed to a height to protect both the side surface of the base member and the side surface of the chucking member.
According to claim 1,
The bonding layer includes a material that compensates for thermal expansion of the base member and the chucking member bonded to each other.
base member;
a chucking member mounted on the base member;
a bonding layer between the base member and the chucking member;
A protective layer formed along an outer surface of the bonding layer to protect the bonding layer,
The electrostatic chuck of claim 1 , wherein the protective layer is a coating layer formed by an atomic layer deposition method.
According to claim 7,
The electrostatic chuck wherein the protective layer has a thickness of 1 μm or less.
According to claim 7,
The electrostatic chuck of claim 1 , wherein the protective layer is sized to cover both side surfaces of the base member and the chucking member.
According to claim 7,
The bonding layer includes at least one of epoxy and PTFE capable of supplementing thermal expansion of the base member and the chucking member.
housing;
a shower head unit installed inside the housing and supplying a process gas for processing a substrate into the housing;
an electrostatic chuck installed below the shower head unit inside the housing and including a chucking member mounted on the base member through a base member and a bonding layer;
a plasma generating unit generating plasma using the process gas to process the substrate;
The electrostatic chuck
A substrate processing apparatus further comprising a protective layer coated with an etch-resistant material on an outer surface of the bonding layer by atomic layer deposition to protect the bonding layer.
According to claim 11,
The protective layer has a thickness of 1 μm or less.

Images