KR20230028677A - Sputtering Coating Apparatus for Coating on the Powder Attachable Reactor equipped with Impeller And the Sputtering Coating Method using Thereof - Google Patents

Abstract

The present invention provides a sputtering device that selects and stirs the surface of fine powder in different rotation directions and sputter-coats with various target materials. The sputtering device comprises: a sputtering chamber that includes a vacuum chamber having an inlet through which gas to generate plasma is injected, an exhaust through which air is exhausted, and a reactor seating part where a reactor is seated, and a sputter gun installed at a position opposite to the reactor to radiate target plasma; a reactor in which the fine powder seated in the reactor seating part is stirred and sputtering is performed; and a reactor driving part for transmitting power for stirring of the fine powder to the reactor, thereby capable of forming a coating layer with excellent quality.

Description

Reaction reactor equipped with an impeller for powder surface coating, a detachable sputtering device and a sputtering coating method using the same

The present invention relates to a sputtering device, and more particularly, to selectively mount a reactor equipped with a vertical impeller or a reactor equipped with a horizontal impeller to select and stir the surface of fine powder in different rotation directions and to target various targets. It relates to a detachable sputtering device with a reaction furnace in which an impeller for powder surface coating to perform sputtering coating with a material is introduced, and a sputtering coating method using the same.

A technology for manufacturing a thin film on the surface of an object to be treated such as a substrate, rod, powder, or tubular member can be largely classified into a physical vapor deposition (PVD) method and a chemical vapor deposition method.

The physical vapor deposition method has cleaner working conditions than the chemical vapor deposition method, and is a thin film manufacturing method in which a solid state material is converted into a gas state using an electron beam, laser beam, or plasma and directly deposited on an object to be treated. On the other hand, the chemical vapor deposition method is a method in which a material to be deposited is moved to the surface of an object to be processed in the form of a gas and a thin film is deposited on the surface by a reaction of the gas.

Among technologies for manufacturing such a thin film, there is sputtering as a representative technology of a physical vapor deposition method using plasma.

In the case of fine powder with a small particle size, the specific surface area is large, and the sintering characteristics and reactivity are excellent. To improve the material properties of the fine powder, the surface of the fine powder is coated with various materials such as various metals using the above-mentioned sputtering. technology has been developed and is being used.

In this case, since the fine powder having a particle size of 10 μm or less has strong cohesive force, it easily forms secondary particles and strongly adsorbs moisture or various gases, so the surface coating quality by the sputtering of the prior art described above It has a problem of deterioration.

That is, when sputtering is applied to coat the surface of the fine powder, a technique for minimizing the aggregation of the fine powder is required to form a uniform coating layer on the surface of the fine powder.

In addition, when a thin film is deposited on the surface of the fine powder through sputtering coating, a technique for rotating and stirring the powder in various directions is also required due to the straightness of the deposition.

Japanese Patent Registration No. 2909744

Therefore, one embodiment of the present invention to solve the above-described problems of the prior art, when performing the surface coating treatment of the fine powder using sputtering, maximizes the flow of the fine powder, periodically sputtered coating particles from the top A detachable sputtering coating device with a reaction reactor in which an impeller for powder surface coating is introduced to form a coating layer with excellent quality by allowing the coating material to be uniformly coated on the surface of the fine powder by exposing the fine powder, and sputtering using the same Providing a coating method is a problem to be solved.

In addition, one embodiment of the present invention for solving the above-described problems of the prior art, while controlling the normal and reverse rotation of the vertical or horizontal impeller and stirring the fine powder for sputtering coating, at the same time vibrating the fine powder by ultrasonic waves to flow By minimizing aggregation by maximizing the impeller for powder surface coating to maximize the coating uniformity, thickness and film quality of the surface of the fine powder, a detachable sputtering coating apparatus and a sputtering coating method using the same are introduced Make it the problem you are trying to solve.

In addition, one embodiment of the present invention for solving the above-described problems of the prior art, while controlling the forward and reverse rotation of the vertical or horizontal impeller and stirring the sputtering coating target fine powder, sputtering power, internal gas flow rate and deposition rate Detachable sputtering coating device with impeller for powder surface coating that enables uniform coating of different materials by controlling and through which physical, optical and electrical properties of fine powder can be controlled, and sputtering using the same Providing a coating method is a problem to be solved.

An embodiment of the present invention for achieving the above-described object of the present invention is a vacuum chamber formed with an inlet through which gas to generate plasma is injected, an exhaust through which air is exhausted, and a reactor seating portion in which the reactor is seated, and a reaction furnace A sputtering chamber including a sputter gun installed at a position facing the target plasma and radiating the target plasma; a reactor in which the fine powder seated in the reactor seat is stirred and sputtering is performed; and a reactor driving unit for transmitting power for agitation of the fine powder to the reactor, wherein the reactor is detachably configured to be detachably attached to the reactor seat.

The reactor is characterized in that it is configured to further include an ultrasonic vibrator for applying vibration to the fine powder.

The reactor includes a vertical agitation reaction chamber having an open top and accommodating fine powder therein; and a vertical impeller arranged vertically inside the vertical stirring reaction chamber to receive power from the reactor driving unit and rotate to perform vertical stirring of the fine powder.

The reactor includes a horizontal agitation reaction chamber having an open top and accommodating fine powder therein; and a horizontal impeller disposed horizontally inside the horizontal agitation reaction chamber and rotated by receiving power from the reactor driving unit to perform horizontal agitation of the fine powder.

The reactor driving unit includes a power conversion unit having a pair of power transmission shafts and selectively transmitting external rotational power to the pair of power transmission shafts; A vertical gear unit converting the rotational force of the power conversion unit among the pair of power transmission shafts into vertical rotational force and transmitting it to the vertical impeller of the reactor; and a horizontal gear unit converting rotational force of the power conversion unit among the pair of power transmission shafts into horizontal rotational force and transmitting the horizontal rotational force to the horizontal impeller of the reactor.

The sputtering device further includes a control unit for controlling at least one of sputtering power, exposure time of the fine powder to the target plasma, rotational speed of the vertical or horizontal impeller, rotational direction of the vertical or horizontal impeller, or flow rate of the internal gas. It is characterized in that it is composed of.

Another embodiment of the present invention for achieving the above-described object of the present invention is a vacuum chamber and a reaction furnace formed with an inlet into which gas to generate plasma is injected, an exhaust port through which air is exhausted, and a reactor seating portion in which the reactor is seated. A sputtering chamber including a sputter gun installed at opposite positions to radiate target plasma; a reaction furnace in which a fine powder is received and stirred by being detachably seated in the reactor seating part and sputtering coating is performed; In the sputtering coating method using a sputtering device comprising a; and a reactor driving unit for transmitting power for agitation of the fine powder to the reactor, a vertical stirring reactor or a horizontal stirring reactor is selected and installed. step; Agitation step of vertically or horizontally stirring the fine powder to be coated by surface sputtering with a vertical or horizontal impeller of the reactor; and a sputtering coating step of performing sputtering coating on the surface of the stirred micropowder by generating a target plasma.

The step of installing the reactor may be a step of simultaneously installing the vertical stirred reactor and the horizontal stirred reactor.

The stirring step is characterized in that the stirring step is performed by simultaneously driving the vertical stirring reactor and the horizontal stirring reactor.

One or more sputter guns are formed in the sputter gun unit, and the sputtering coating step is a step in which target plasma is generated using the one or more sputter guns to perform sputtering coating.

According to embodiments of the present invention, when performing the surface coating treatment of the fine powder using sputtering, the surface of the fine powder can be selectively performed in a vertical or horizontal direction for agitation of the fine powder. It provides the effect of significantly improving the coating quality.

In addition, in one embodiment of the present invention, when performing the surface coating treatment of the fine powder using sputtering, the flow of the fine powder is maximized and the surface of the fine powder is coated by exposing the fine powder to the sputtered coating particles from the top. It provides the effect of forming a surface coating layer with excellent quality by allowing the material to be uniformly coated.

In addition, in one embodiment of the present invention, the surface of the fine powder is coated by using a vertical or horizontal impeller to control forward and reverse rotation, stirring the fine powder for sputtering coating, and at the same time vibrating the fine powder by ultrasonic waves to minimize aggregation. It provides the effect of maximizing uniformity, thickness and film quality.

In addition, in one embodiment of the present invention, the forward and reverse rotation is controlled using a vertical or horizontal impeller, and the fine powder to be sputtered and coated is stirred, and at the same time, the sputtering power, internal gas flow rate, and deposition rate are controlled to uniformly dissimilar materials. It enables coating, and through this, it provides an effect that allows the physical, optical and electrical properties of the fine powder to be controlled.

In addition, one embodiment of the present invention is to improve the durability of the fine powder through the coating of different materials, to control physical properties such as sintering temperature, optical properties such as reflectance or refractive index, and electrical properties such as conductivity It provides an effect that can expand the application field of fine powder.

In addition, an embodiment of the present invention is applied to various industries such as the electric and electronic industry and the automobile industry to which fine powder is applied, as well as the energy industry such as battery materials, the environmental industry such as catalyst materials, and the bio industry such as drug release and antibacterial materials. It is applied to provide the effect of significantly improving the properties of the material.

1 is a configuration diagram of a sputtering device 1 according to an embodiment of the present invention.
2 is a cross-sectional view of a sputtering device 1 according to an embodiment of the present invention equipped with a vertical stirring reactor 310 equipped with a vertical impeller 320.
Figure 3 is a cross-sectional view of the sputtering device 1 of one embodiment of the present invention equipped with a horizontal stirring reactor 330 equipped with a horizontal impeller 340.
Figure 4 is a flow chart of a sputtering coating method of another embodiment of the present invention.

Hereinafter, the present invention will be described with reference to the accompanying drawings. However, the present invention may be embodied in many different forms and, therefore, is not limited to the embodiments described herein. And in order to clearly explain the present invention in the drawings, parts irrelevant to the description are omitted, and similar reference numerals are attached to similar parts throughout the specification.

Throughout the specification, when a part is said to be "connected (connected, contacted, combined)" with another part, this is not only "directly connected", but also "indirectly connected" with another member in between. "Including cases where In addition, when a part "includes" a certain component, it means that it may further include other components without excluding other components unless otherwise stated.

Terms used in this specification are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, terms such as "include" or "have" are intended to designate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features It should be understood that the presence or addition of numbers, steps, operations, components, parts, or combinations thereof is not precluded.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a configuration diagram of a sputtering apparatus 1 of an embodiment of the present invention, and FIG. 2 is a sputtering apparatus 1 of an embodiment of the present invention equipped with a vertical stirring reactor 310 equipped with a vertical impeller 320 ), Figure 3 is a cross-sectional view of the sputtering device 1 of one embodiment of the present invention equipped with a horizontal stirring reactor 330 equipped with a horizontal impeller 340.

As shown in FIGS. 1 to 3 , the sputtering apparatus 1 includes a sputtering chamber 100 , a reaction furnace 300 detachable from the inside of the sputtering chamber 100 , and a controller 500 .

The sputtering chamber 100 includes a vacuum chamber 110 and a sputter gun unit 120.

The vacuum chamber 110 has an inlet 111 through which gas to generate plasma is injected, an exhaust port 113 through which air is exhausted, and a reaction furnace 310 or 330 seated at the inner center of the vacuum chamber 110. The seating part 140 is formed to maintain the inside in a highly vibrating state and reacts with the injected gas to form a reaction space for sputtering and coating the surface of the fine powder by converting the target of the sputter gun 120 into plasma.

The sputter gun unit 120 includes one or more sputter guns 121 to which a target 123 is attached and is installed on the inner upper surface of the vacuum chamber 110 located above the reaction furnace seating unit 140. Then, in the vacuum low-pressure gas atmosphere inside the vacuum chamber 110, target plasma is generated by ions generated by glow discharge by an external power source and radiated to the reactor seat 140. Also, as shown in FIG. 1 , the sputter gun unit 120 may include two or more sputter guns 121 . In addition, the sputter gun unit 120 is configured to further include a magnetic material to perform sputtering at high speed after confining plasma.

The reactor driving unit 200 includes a power conversion unit 210, a vertical gear unit 220, a horizontal gear unit 230, and a plurality of power transmission shafts 240.

The power conversion unit 210 selectively transfers external rotational power to a pair of power transmission shafts 240 perpendicular to each other according to vertical or horizontal agitation of the fine powder stored in the reactor 300. is configured to

The vertical gear unit 220 includes a gear train for converting rotation of a horizontal shaft into rotation of a vertical shaft therein, and is vertically coupled to the power conversion unit 210 of the pair of power transmission shafts 240 It is coupled to the end of the power transmission shaft 240b and is configured to convert horizontal rotational force into vertical rotational force and transmit it to the vertical impeller 320 of the reactor (vertical stirring reactor 310).

The horizontal gear unit 230 includes a gear train for converting rotation of a vertical shaft into rotation of a horizontal shaft therein, and moves vertically upward to the power conversion unit 210 among the pair of power transmission shafts 240. It is coupled to the upper end of the power transmission shaft 240a to be coupled to convert vertical rotational force into horizontal rotational force and transmit it to the horizontal impeller 340 of the reactor (horizontal agitation reactor 330).

The vacuum pump unit 400 is coupled to the exhaust port 113 to exhaust air inside the vacuum chamber 110 to maintain the inside of the vacuum chamber 110 in a high vacuum state.

The reaction furnace 300 is configured to include a vertical stirring reactor 310 and a horizontal stirring reactor 330 that are detached from the reactor mounting portion 140 inside the vacuum chamber 110 .

The vertical stirring reaction furnace 310 has a vertical stirring reaction chamber 311 having an open top and accommodating the fine powder to be sputtered coated therein, and an axis is vertically arranged inside the vertical stirring reaction chamber 311. It is configured to include a vertical impeller 320 that is rotated by receiving power from the reactor driving unit 200 to perform vertical agitation of the fine powder.

In addition, the horizontal stirring reaction furnace 330 has a horizontal stirring reaction chamber 331 having an open top and accommodating fine powder for sputtering coating therein, and an axis horizontally arranged inside the horizontal stirring reaction chamber 331. It is configured to include a horizontal impeller 300 that is rotated by receiving power from the reactor driving unit 200 to perform horizontal agitation of the fine powder.

In order to selectively select the vertical stirring reactor 310 and the horizontal stirring reactor 330 of the above-described configuration and mount them on the reactor mounting portion 140, the vertical gear unit 220 is the vertical stirring reactor ( 310) is configured to be detachably coupled to the axis of the vertical impeller 320. And the horizontal gear unit 230 is configured to be detachably coupled to the axis of the horizontal impeller 340 of the horizontal stirring reactor 330. Shaft coupling between the shaft of the vertical gear unit 220 and the vertical impeller 320 and shaft coupling between the shaft of the horizontal gear unit 230 and the horizontal impeller 340 include various shaft joint members such as clamps, flange couplings, and joints that connect shafts to each other. A variety of axial joint methods can be applied.

In addition, each of the vertical stirring reactor 310 and the horizontal stirring reactor 330 further includes one or more ultrasonic vibrators 20 for applying vibration to the fine powder to prevent aggregation of the fine powder being stirred. It is composed by

The control unit 500 is configured to control one or more of sputtering power, exposure time of the fine powder to the target plasma, rotation speed of the vertical or horizontal impeller, rotation direction of the vertical or horizontal impeller, or flow rate of the internal gas.

Specifically, the control unit 500 controls the normal and reverse rotation of the vertical or horizontal impellers 320 and 340 and stirs the fine powder for sputtering coating and at the same time vibrates the fine powder by ultrasonic waves to minimize aggregation, thereby minimizing the surface of the fine powder. It can be configured to perform control to maximize the coating uniformity, thickness and film quality of the coating.

In addition, the control unit 500 controls the normal and reverse rotation of the vertical or horizontal impeller, stirs the sputtering coating target fine powder, and at the same time controls the sputtering power, internal gas flow rate and deposition rate to uniformly coat different materials, , through which the physical, optical and electrical properties of the fine powder can be controlled.

In the description of one embodiment of the present invention described above, it has been described that the vertical stirred reactor 310 and the horizontal stirred reactor 330 are selectively mounted on the reactor seating portion 140 of the vacuum chamber 110, but this It is not limited.

When the vacuum chamber 110 of one embodiment of the present invention has a structure and size capable of accommodating both the vertical stirred reactor 310 and the horizontal stirred reactor 330, the vertical stirred reactor 310 and the horizontal stirred reactor The stirring reactor 330 is seated on the reactor seat 140 at the same time, and vertical stirring is performed in the vertical stirring reactor 310 and sputtering coating is performed on the fine powder. At the same time, the horizontal stirring reactor ( 330) may be configured to perform sputtering coating on the fine powder by performing horizontal agitation.

4 is a flow chart of a sputtering coating method according to another embodiment of the present invention.

In another embodiment of the sputtering coating method of the present invention, an inlet 111 into which gas to generate plasma is injected, an exhaust port 113 through which air is exhausted, and a reactor seating portion 140 where the reactor 300 is seated are formed. A sputtering chamber 100, a reaction furnace 300 in which the fine powder is accommodated and stirred by being detachably seated in the reaction furnace seating part 140 and sputtering coating is performed, and the fine powder is stirred in the reaction furnace 300 In the sputtering coating method using a sputtering device including a reactor drive unit 200 for transmitting power and a sputter gun unit 120 installed at a position facing the reactor 300 to radiate target plasma, Reactor mounting step (S10) of selecting and installing the stirred reactor 310 or the horizontal stirred reactor 320, the surface sputtering coating target fine powder with the vertical or horizontal impeller 310 or 330 of the reactor 300 A stirring step (S20) of vertical or horizontal stirring and a sputtering coating step (S30) of generating target plasma in the sputter gun unit 120 to perform sputtering coating on the surface of the stirred fine powder (S30). It may be a sputtering coating method using a sputtering device.

In the reactor mounting step (S10), the vertical stirring reactor 310 or the horizontal stirring reactor is installed on the reactor seating part 140 inside the vacuum chamber 110 according to the direction of vertical stirring or horizontal stirring of the sputtering coating target fine powder. It may be a step of selecting and installing 320.

In contrast, when sputtering coating is performed on different fine powders at the same time, or when sputtering coating is performed by performing vertical and horizontal agitation on the same fine powder, the reactor mounting step (S10) is the vertical agitation reaction. It may be a step of simultaneously mounting the furnace 310 and the horizontal stirred reactor 330.

When the installation of the reactor 300 is completed in the above-described reactor installation step (S10), the air inside the vacuum chamber 110 is evacuated and evacuated, and a gas for plasma generation such as an inert gas is supplied to the reactor 300. It is injected into the vacuum chamber 110.

In the stirring step (S20), when the vertical stirring reactor 310 or the horizontal stirring reactor 320 is selected and installed in the reactor mounting step (S10), the vertical stirring reactor 310 or the horizontal stirring reactor 310 is installed. It may be a step of vertically or horizontally stirring the fine powder to be coated by surface sputtering with a vertical or horizontal impeller of the stirring reactor 320.

Unlike this, in the stirring step (S20), when the vertical stirring reactor 310 and the horizontal stirring reactor 320 are installed at the same time in the reactor mounting step (S10), the installed vertical stirring reactor 310 And it may be a step of vertically and horizontally stirring the fine powder to be coated by surface sputtering with vertical and horizontal impellers of the horizontal stirring reactor 320.

In addition, the stirring step (S20) may further include vibrating the fine powder by ultrasonic vibration by further providing an ultrasonic vibrator 20 to the reaction furnace 300 to suppress aggregation of the fine powder.

The sputtering coating step (S30) is a step of generating target plasma in the sputter gun unit 120 by applying external power to perform sputtering coating on the surface of the stirred fine powder. In this process, the target plasma is moved toward the reaction furnace by a magnetic field generated by the sputter gun unit 120 and the magnetic material provided in the reactor 300 or the vacuum chamber 110 .

At this time, the sputter gun unit 120 includes one or more sputter guns 121, and the sputtering coating step (S30) is a step in which sputtering coating is performed by generating target plasma using the one or more sputter guns 121. It may be.

In this process, as described above, the controller 500 of the sputtering device 1 controls the sputtering power, the exposure time of the fine powder to the target plasma, the rotation speed of the vertical or horizontal impeller, the rotation direction of the vertical or horizontal impeller, or Controls one or more of the flow rates of the internal gas.

Specifically, the control unit 500 controls the normal and reverse rotation of the vertical or horizontal impellers 320 and 340 and stirs the fine powder for sputtering coating and at the same time vibrates the fine powder by ultrasonic waves to minimize aggregation, thereby minimizing the surface of the fine powder. It is possible to perform control to maximize the coating uniformity, thickness and film quality of the coating.

In addition, the control unit 500 controls the normal and reverse rotation of the vertical or horizontal impeller, stirs the sputtering coating target fine powder, and at the same time controls the sputtering power, internal gas flow rate and deposition rate to uniformly coat different materials, , it is also possible to control the physical, optical and electrical properties of the micropowder through this.

The above description of the present invention is for illustrative purposes, and those skilled in the art can understand that it can be easily modified into other specific forms without changing the technical spirit or essential features of the present invention. will be. Therefore, the embodiments described above should be understood as illustrative in all respects and not limiting. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined form.

The scope of the present invention is indicated by the following claims, and all changes or modifications derived from the meaning and scope of the claims and equivalent concepts should be interpreted as being included in the scope of the present invention.

1: sputtering device
20: ultrasonic vibrator
100: sputtering chamber
110: vacuum chamber
111: inlet
113: exhaust
120: sputter gun
121: sputter gun
123: target
140: reactor seating part
200: reactor driving unit
210: power conversion unit
220: vertical gear
230: horizontal gear
240: power transmission shaft
300: reactor
310: vertical stirred reactor
311: vertical stirring reaction chamber
320; vertical impeller
330: horizontal stirring reactor
331: horizontal stirring reaction chamber
340: horizontal impeller
400: vacuum pump unit
500: control unit

Claims (10)

Sputtering including a vacuum chamber having an inlet through which gas to generate plasma is injected, an exhaust through which air is exhausted, and a reaction furnace seating portion where the reaction furnace is seated, and a sputter gun installed at a position opposite to the reaction furnace to radiate target plasma chamber;
a reactor in which the fine powder seated in the reactor seat is stirred and sputtering is performed; and
Including; a reactor driving unit for transmitting power for agitation of the fine powder to the reactor;
The reaction furnace is a sputtering device, characterized in that configured to be detachable to the reaction furnace seating portion. The method of claim 1, wherein the reactor,
A sputtering device further comprising an ultrasonic vibrator for applying vibration to the fine powder. The method of claim 1, wherein the reactor,
a vertical agitation reaction chamber having an open top and accommodating fine powder therein; and
A vertical agitation reactor comprising a vertical impeller arranged vertically inside the vertical agitation reaction chamber and rotated by receiving power from the reactor driving unit to perform vertical agitation of the fine powder. . The method of claim 1, wherein the reactor,
A horizontal agitation reaction chamber having an open top and accommodating fine powder therein; and
A horizontal agitation reactor comprising a horizontal impeller arranged horizontally inside the horizontal agitation reaction chamber and rotated by receiving power from the reactor driving unit to perform horizontal agitation of the fine powder. . The method of claim 1, wherein the reactor driving unit,
a power conversion unit having a pair of power transmission shafts and selectively transmitting external rotational power to the pair of power transmission shafts;
A vertical gear unit converting the rotational force of the power conversion unit among the pair of power transmission shafts into vertical rotational force and transmitting it to the vertical impeller of the reactor; and
A sputtering device characterized in that it comprises a; horizontal gear unit for converting the rotational force of the power conversion unit of the pair of power transmission shafts into horizontal rotational force and transmitting it to the horizontal impeller of the reactor. According to claim 1,
A controller for controlling at least one of sputtering power, exposure time of fine powder to target plasma, rotational speed of vertical or horizontal impeller, rotational direction of vertical or horizontal impeller, or flow rate of internal gas; characterized in that it is configured to further include A sputtering device made of. A sputtering chamber including a vacuum chamber formed with an inlet through which gas to generate plasma is injected, an exhaust through which air is exhausted, and a reaction furnace seating portion in which the reaction furnace is seated, and a sputter gun installed at a position opposite to the reaction furnace to radiate target plasma ; a reaction furnace in which a fine powder is received and stirred by being detachably seated in the reactor seating part and sputtering coating is performed; In the sputtering coating method using a sputtering device comprising a; and a reactor driving unit for transmitting power for agitation of the fine powder to the reactor,
Reactor installation step of selecting and installing a vertical stirred reactor or a horizontal stirred reactor;
Agitation step of vertically or horizontally stirring the fine powder to be coated by surface sputtering with a vertical or horizontal impeller of the reactor; and
A sputtering coating method characterized by comprising a; sputtering coating step of performing sputtering coating on the surface of the fine powder being stirred by generating a target plasma. The method of claim 8, wherein the reactor mounting step,
The sputtering coating method, characterized in that the step of simultaneously mounting the vertical stirring reactor and the horizontal stirring reactor. The method of claim 8, wherein the stirring step,
The sputtering coating method, characterized in that the stirring step is performed by simultaneously driving the vertical stirring reactor and the horizontal stirring reactor. The method of claim 7, wherein the sputter gun unit includes one or more sputter guns,
The sputtering coating step is a sputtering coating method characterized in that the sputtering coating is performed by generating a target plasma using the one or more sputter guns.

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