KR102627889B1 - Sputtering Coating Apparatus for Coating on the Powder Attachable Reactor equipped with Impeller And the Sputtering Coating Method using Thereof - Google Patents

Abstract

The present invention is a reactor in which an inlet through which gas to generate plasma is injected, an exhaust port through which air is exhausted, and a reaction furnace are seated so that the surface of fine powder can be sputter-coated with various target materials by selecting different rotation directions and stirring the surface. A sputtering chamber including a vacuum chamber in which a seating portion is formed, and a sputter gun portion installed in a position opposite the reactor to radiate target plasma; A reactor in which the fine powder seated and stored in the reactor seating portion is stirred and sputter coating is performed; and a reactor driving unit that transmits power for stirring the fine powder to the reactor, wherein the reactor is configured to be detachably attached to the reactor mounting portion.

Description

{Sputtering Coating Apparatus for Coating on the Powder Attachable Reactor equipped with Impeller And the Sputtering Coating Method using Thereof}

The present invention relates to a sputtering device, and more specifically, by selectively equipping a reactor with a vertical impeller or a reactor with a horizontal impeller to agitate the surface of fine powder by selecting different rotation directions and targeting various targets. It relates to a removable reactor sputtering device incorporating an impeller for powder surface coating that allows sputter coating to be performed with materials and a sputter coating method using the same.

Technologies for producing thin films on the surfaces of objects to be treated, such as substrates, rods, powders, and tubular members, can be broadly classified into physical vapor deposition (PVD) methods and chemical vapor deposition (Chemical vapor deposition) methods.

The physical vapor deposition method has cleaner working conditions than the chemical vapor deposition method, and is a thin film manufacturing method that uses electron beams, laser beams, or plasma to convert solid materials into a gaseous state and deposits them directly on the object to be processed. On the other hand, the chemical vapor deposition method is a method of moving the material to be deposited in the form of gas to the surface of the object to be treated and depositing a thin film on the surface through the reaction of the gas.

Among the technologies for manufacturing such thin films, sputtering is a representative physical vapor deposition technology using plasma.

In the case of fine powder with a small particle size, the specific surface area is large and the sintering characteristics and reactivity are excellent. In order to improve the material properties of the fine powder, the surface of the fine powder is coated with various materials such as various metals using the sputtering described above. Technologies have been developed and are being used.

In this case, in the case of fine powder with a particle size of 10㎛ or less, the cohesive force is strong, so secondary particles are easily formed, and moisture or various gases are strongly adsorbed, so the surface coating quality by sputtering in the prior art described above is poor. This has the problem of deterioration.

That is, when applying sputtering to coat the surface of fine powder, a technology is required to minimize agglomeration of the fine powder so that a uniform coating layer can be formed on the surface of the fine powder.

In addition, when depositing a thin film on the surface of a fine powder through sputtering coating, a technology that allows the powder to be rotated and stirred in various directions is also required due to the linear nature of the deposition.

Japanese Patent Publication No. 2909744

Therefore, in an embodiment of the present invention to solve the problems of the prior art described above, when performing surface coating treatment of fine powder using sputtering, the flow of fine powder is maximized and the coating particles sputtered from the top are periodically sprayed. Reactor detachable sputtering coating device incorporating an impeller for coating the powder surface, which allows the coating material to be uniformly coated on the surface of the fine powder by exposing the fine powder to form a high-quality coating layer, and sputtering using the same The problem to be solved is to provide a coating method.

In addition, in an embodiment of the present invention to solve the problems of the prior art described above, the forward and reverse rotation of the vertical or horizontal impeller is controlled and the fine powder to be sputtered coated is stirred, and the fine powder is vibrated by ultrasonic waves to flow. A removable sputtering coating device with an impeller introduced for powder surface coating that maximizes the coating uniformity, thickness and film quality of the fine powder surface by minimizing agglomeration by maximizing and a sputtering coating method using the same. What is provided is the problem to be solved.

In addition, an embodiment of the present invention to solve the problems of the prior art described above controls the forward and reverse rotation of the vertical or horizontal impeller and agitates the fine powder to be sputtered coated, while adjusting the sputtering power, internal gas flow rate, and deposition rate. A removable sputtering coating device with an impeller for powder surface coating that allows uniform coating of different materials and control of the physical, optical and electrical properties of fine powder, and sputtering using the same. The problem to be solved is to provide a coating method.

One embodiment of the present invention for achieving the above-described object of the present invention includes a vacuum chamber having an inlet through which gas to generate plasma is injected, an exhaust port through which air is exhausted, and a reactor seating portion into which the reactor is seated, and a reactor. A sputtering chamber including a sputter gun unit installed at a position opposite to the target plasma and emitting target plasma; A reactor in which the fine powder seated and stored in the reactor seating portion is stirred and sputter coating is performed; and a reactor driving unit that transmits power for stirring the fine powder to the reactor, wherein the reactor is configured to be detachably attached to the reactor mounting portion.

The reactor is characterized by further including an ultrasonic vibrator that applies vibration to the fine powder.

The reactor includes a vertical stirring reaction chamber with an open top and accommodating fine powder therein; and a vertical impeller disposed vertically inside the vertical stirring reaction chamber and rotating by receiving power from the reactor drive unit to perform vertical agitation of the fine powder.

The reactor includes a horizontal stirring reaction chamber with an open top and accommodating fine powder therein; and a horizontal impeller disposed horizontally within the horizontal stirring reaction chamber and rotating by receiving power from the reactor drive unit to horizontally agitate the fine powder.

The reactor drive unit includes a power conversion unit that includes a pair of power transmission shafts and selectively transmits external rotational power to the pair of power transmission shafts; A vertical gear unit that converts the rotational force of the power conversion unit among the pair of power transmission shafts into vertical rotational force and transmits it to the vertical impeller of the reactor; And a horizontal gear unit that converts the rotational force of the power conversion unit of the pair of power transmission shafts into horizontal rotational force and transmits it to the horizontal impeller of the reactor.

The sputtering device further includes a control unit that controls one or more of sputtering power, exposure time of the fine powder to the target plasma, rotation speed of the vertical or horizontal impeller, rotation direction of the vertical or horizontal impeller, or flow rate of the internal gas. It is characterized by being composed of.

Another embodiment of the present invention for achieving the object of the present invention described above includes a vacuum chamber and a reactor having an inlet through which gas to generate plasma is injected, an exhaust port through which air is exhausted, and a reactor seating portion on which the reactor is seated. A sputtering chamber installed at an opposing position and including a sputter gun unit that radiates target plasma; A reactor that is detachably mounted on the reactor seating portion and in which fine powder is stored, stirred, and sputter coating is performed; In the sputtering coating method using a sputtering device including a reactor driving unit that transmits power for stirring the fine powder to the reactor, the reactor is installed by selecting a vertical stirring reactor or a horizontal stirring reactor. step; A stirring step of vertically or horizontally stirring the fine powder subject to surface sputtering coating with a vertical or horizontal impeller of the reactor; and a sputtering coating step of generating a target plasma and performing sputtering coating on the surface of the stirred fine powder.

The reactor mounting step may be a step of simultaneously mounting the vertical agitated reactor and the horizontal agitated reactor.

The stirring step is characterized in that it is performed by simultaneously operating the vertical stirring reactor and the horizontal stirring reactor.

One or more sputter guns are formed in the sputter gun unit, and the sputtering coating step is characterized in that sputtering coating is performed by generating target plasma using the one or more sputter guns.

According to embodiments of the present invention, when performing surface coating treatment of fine powder using sputtering, the rotation direction for stirring the fine powder can be selectively performed in the vertical or horizontal direction. It provides the effect of significantly improving coating quality.

In addition, in one embodiment of the present invention, when performing surface coating treatment of fine powder using sputtering, the flow of fine powder is maximized and the fine powder is exposed to coating particles sputtered from the top, thereby coating the surface of the fine powder. It provides the effect of forming a high-quality surface coating layer by ensuring that the material is uniformly coated.

In addition, one embodiment of the present invention uses a vertical or horizontal impeller to control forward and reverse rotation, stirs the fine powder subject to sputter coating, and simultaneously vibrates the fine powder by ultrasonic waves to minimize agglomeration, thereby coating the surface of the fine powder. It provides the effect of maximizing uniformity, thickness, and film quality.

In addition, one embodiment of the present invention uses a vertical or horizontal impeller to control forward and reverse rotation and stir the fine powder to be sputtered coated, while controlling the sputtering power, internal gas flow rate, and deposition rate to uniformly mix heterogeneous materials. It provides the effect of enabling coating and controlling the physical, optical and electrical properties of fine powder.

In addition, one embodiment of the present invention improves the durability of fine powder through coating of different materials, and controls physical properties such as sintering temperature, optical properties such as reflectance or refractive index, and electrical properties such as conductivity. It provides the effect of expanding the application field of fine powder.

In addition, an embodiment of the present invention is applicable not only to the electrical and electronics industry and the automobile industry to which fine powders are applied, but also to various industries such as the energy industry such as battery materials, the environmental industry such as catalyst materials, and the bio industry such as drug release and antibacterial materials. When applied to, it provides the effect of significantly improving the properties of the material.

1 is a configuration diagram of a sputtering device 1 according to an embodiment of the present invention.
Figure 2 is a cross-sectional view of the sputtering device 1 according to an embodiment of the present invention equipped with a vertical stirring reactor 310 equipped with a vertical impeller 320.
Figure 3 is a cross-sectional view of the sputtering device 1 according to an embodiment of the present invention equipped with a horizontal stirring reactor 330 equipped with a horizontal impeller 340.
Figure 4 is a flow chart of a sputtering coating method of another embodiment of the present invention.

Hereinafter, the present invention will be described with reference to the attached drawings. However, the present invention may be implemented in various different forms and, therefore, is not limited to the embodiments described herein. In order to clearly explain the present invention in the drawings, parts that are not related to the description are omitted, and similar parts are given similar reference numerals throughout the specification.

Throughout the specification, when a part is said to be "connected (connected, contacted, combined)" with another part, this means not only "directly connected" but also "indirectly connected" with another member in between. "Includes cases where it is. In addition, when a part is said to “include” a certain component, this does not mean that other components are excluded, but that other components can be added, unless specifically stated to the contrary.

The terms used herein are only used to describe specific embodiments and are not intended to limit the invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, terms such as “comprise” or “have” are intended to designate the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, but are not intended to indicate the presence of one or more other features. It should be understood that this does not exclude in advance the possibility of the existence or addition of elements, numbers, steps, operations, components, parts, or combinations thereof.

Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings.

Figure 1 is a configuration diagram of a sputtering device (1) according to an embodiment of the present invention, and Figure 2 is a sputtering device (1) according to an embodiment of the present invention equipped with a vertical stirring reactor (310) equipped with a vertical impeller (320). ), and Figure 3 is a cross-sectional view of the sputtering device 1 of an embodiment of the present invention equipped with a horizontal stirring reactor 330 equipped with a horizontal impeller 340.

1 to 3, the sputtering device 1 includes a sputtering chamber 100, a reactor 300 that is detachable from the inside of the sputtering chamber 100, and a control unit 500.

The sputtering chamber 100 includes a vacuum chamber 110 and a sputter gun unit 120.

The vacuum chamber 110 has an injection port 111 through which gas to generate plasma is injected, an exhaust port 113 through which air is exhausted, and a reaction furnace 310 or 330 is seated in the inner center of the vacuum chamber 110. The seating portion 140 is formed to maintain the interior in a high vibration state and react with the injected gas to turn the target of the sputter gun portion 120 into plasma to form a reaction space for sputter coating the surface of the fine powder.

The sputter gun unit 120 includes one or more sputter guns 121 to which a target 123 is attached, and is installed on the inner upper surface of the vacuum chamber 110 located at the upper part of the reaction furnace seating unit 140. The target plasma is generated by ions generated by glow discharge by an external power source in a vacuum low-pressure gas atmosphere inside the vacuum chamber 110 and radiated to the reactor seating portion 140. And, as shown in FIG. 1, the sputter gun unit 120 may be configured to include two or more sputter guns 121. In addition, the sputter gun unit 120 is configured to further include a magnetic material that allows sputtering to be performed at high speed after confining plasma.

The reactor drive unit 200 includes a power conversion unit 210, a vertical gear unit 220, a horizontal gear unit 230, and a plurality of power transmission shafts 240.

The power conversion unit 210 selectively transmits external rotational power to a pair of power transmission shafts 240 that are perpendicular to each other according to vertical or horizontal agitation of the fine powder stored in the reactor 300. It is configured to do so.

The vertical gear unit 220 is configured to include a gear train that converts the rotation of the horizontal axis into the rotation of the vertical axis, and is vertically coupled to the power conversion unit 210 of the pair of power transmission shafts 240. It is coupled to the end of the power transmission shaft 240b to convert horizontal rotational force into vertical rotational force and transmit it to the vertical impeller 320 of the reactor (vertical agitation reactor 310).

The horizontal gear unit 230 is configured to include a gear train that converts the rotation of the vertical axis into the rotation of the horizontal axis, and moves vertically upward to the power conversion unit 210 among the pair of power transmission shafts 240. It is coupled to the upper end of the power transmission shaft 240a to convert vertical rotational force into horizontal rotational force and transmit it to the horizontal impeller 340 of the reactor (horizontal stirring reactor 330).

The vacuum pump unit 400 is coupled with the exhaust port 113 to maintain the interior of the vacuum chamber 110 in a high vacuum state by exhausting the air inside the vacuum chamber 110.

The reactor 300 includes a vertical stirred reactor 310 and a horizontal stirred reactor 330 that are detachable from the reactor seating portion 140 inside the vacuum chamber 110.

The vertical stirring reaction furnace 310 includes a vertical stirring reaction chamber 311 with an open top and accommodating fine powder to be sputtered coating therein, and an axis is arranged vertically inside the vertical stirring reaction chamber 311. It is configured to include a vertical impeller 320 that receives power from the reactor drive unit 200 and rotates to perform vertical agitation of the fine powder.

In addition, the horizontal stirring reaction furnace 330 includes a horizontal stirring reaction chamber 331 with an open top and accommodating fine powder to be sputtered coating therein, and the axis is arranged horizontally within the horizontal stirring reaction chamber 331. It is configured to include a horizontal impeller (300) that receives power from the reactor driving unit (200) and rotates to perform horizontal agitation of the fine powder.

In order to selectively select the vertical stirred reactor 310 and the horizontal stirred reactor 330 of the above-described configuration and mount them on the reactor seating unit 140, the vertical gear unit 220 is provided with the vertical stirred reactor ( It is configured to be demountably coupled to the axis of the vertical impeller 320 of 310). And the horizontal gear unit 230 is configured to be detachably coupled to the axis of the horizontal impeller 340 of the horizontal stirring reactor 330. The shaft coupling of the shaft of the vertical gear unit 220 and the vertical impeller 320 and the shaft coupling of the shaft of the horizontal gear unit 230 and the horizontal impeller 340 use various shaft joint members such as clamps, flange couplings, and joints that connect the shafts to each other. Various shaft joint methods can be applied.

In addition, each of the vertical stirring reactor 310 and the horizontal stirring reactor 330 further includes one or more ultrasonic vibrators 20 that apply vibration to the fine powder to prevent the stirred fine powder from agglomerating. It is composed by:

The control unit 500 is configured to control one or more of sputtering power, exposure time of fine powder to the target plasma, rotation speed of the vertical or horizontal impeller, rotation direction of the vertical or horizontal impeller, or flow rate of the internal gas.

Specifically, the control unit 500 controls the forward and reverse rotation of the vertical or horizontal impellers 320 and 340, stirs the fine powder to be sputtered coated, and simultaneously vibrates the fine powder by ultrasonic waves to minimize agglomeration, thereby forming the surface of the fine powder. It can be configured to perform control to maximize coating uniformity, thickness, and film quality.

In addition, the control unit 500 controls the forward and reverse rotation of the vertical or horizontal impeller and stirs the fine powder to be sputtered coated, while controlling the sputtering power, internal gas flow rate, and deposition speed to uniformly coat heterogeneous materials. , through which it is possible to control the physical, optical and electrical properties of fine powder.

In the description of an embodiment of the present invention described above, it has been described that the vertical stirred reactor 310 and the horizontal stirred reactor 330 are selectively mounted on the reactor seating portion 140 of the vacuum chamber 110. It is not limited.

When the vacuum chamber 110 of an embodiment of the present invention has a structure and size that can accommodate both the vertical stirred reactor 310 and the horizontal stirred reactor 330, the vertical stirred reactor 310 and the horizontal stirred reactor 330 The stirring reactor 330 is simultaneously seated on the reactor seating portion 140, and the vertical stirring reactor 310 performs vertical stirring and sputtering coating on the fine powder, and at the same time, the horizontal stirring reactor ( In 330), it may be configured to perform sputtering coating on fine powder by performing horizontal stirring.

Figure 4 is a flowchart of a sputtering coating method according to another embodiment of the present invention.

The sputtering coating method of another embodiment of the present invention includes an injection port 111 through which gas to generate plasma is injected, an exhaust port 113 through which air is exhausted, and a reactor seating portion 140 on which the reactor 300 is seated. A sputtering chamber 100, a reactor 300 that is detachably mounted on the reactor seating portion 140 to accommodate and stir fine powder and perform sputtering coating, and agitation of the fine powder in the reactor 300. In the sputtering coating method using a sputtering device including a reactor drive unit 200 that transmits power for and a sputter gun unit 120 installed at a position opposite the reactor 300 to radiate target plasma, the vertical A reactor installation step (S10) of selecting and installing the stirred reactor 310 or the horizontal stirred reactor 320, fine powder to be coated by surface sputtering with the vertical or horizontal impeller 310 or 330 of the reactor 300. The reactor is detachable and consists of a stirring step (S20) of vertically or horizontally stirring and a sputtering coating step (S30) of performing sputtering coating on the surface of the fine powder being stirred by generating target plasma in the sputter gun unit 120. It may be a sputtering coating method using a sputtering device.

The reactor installation step (S10) is performed by installing a vertical stirring reactor 310 or a horizontal stirring reactor on the reactor seating portion 140 inside the vacuum chamber 110 according to the vertical or horizontal stirring direction of the fine powder to be sputtered coated. This may be a step of selecting and mounting (320).

On the other hand, when sputter coating is performed simultaneously on different fine powders, or when sputter coating is performed by performing vertical and horizontal stirring on the same fine powder, the reactor mounting step (S10) is performed in the vertical stirring reaction. This may be a step of installing the furnace 310 and the horizontal stirred reactor 330 at the same time.

When the installation of the reactor 300 is completed in the above-described reactor installation step (S10), the air inside the vacuum chamber 110 is evacuated and the gas for generating plasma, such as an inert gas, is supplied to the vacuum chamber 110. It is injected into the interior of the vacuum chamber 110.

The stirring step (S20) is performed by selecting and installing the vertical stirring reactor 310 or the horizontal stirring reactor 320 in the reactor installation step (S10). This may be a step of vertically or horizontally stirring the fine powder subject to surface sputtering coating with the vertical or horizontal impeller of the stirring reactor 320.

On the other hand, in the stirring step (S20), when the vertical stirring reactor 310 and the horizontal stirring reactor 320 are installed simultaneously in the reactor mounting step (S10), the installed vertical stirring reactor 310 And it may be a step of vertically and horizontally stirring the fine powder subject to surface sputtering coating with the vertical and horizontal impellers of the horizontal stirring reactor 320.

In addition, the stirring step (S20) may further include vibrating the fine powder by ultrasonic vibration by further providing an ultrasonic vibrator 20 in the reactor 300 to suppress agglomeration of the fine powder.

The sputtering coating step (S30) is a step of performing sputtering coating on the surface of the stirred fine powder by generating target plasma in the sputter gun unit 120 by applying an external power source. In this process, the target plasma is moved toward the reactor by a magnetic field generated by a magnetic material provided in the sputter gun unit 120 and the reactor 300 or vacuum chamber 110.

At this time, the sputter gun unit 120 includes one or more sputter guns 121, and the sputtering coating step (S30) is a step in which sputtering coating is performed by generating target plasma using the one or more sputter guns 121. It may be.

In this process, as described above, the control unit 500 of the sputtering device 1 controls the sputtering power, the exposure time of the fine powder to the target plasma, the rotation speed of the vertical or horizontal impeller, the rotation direction of the vertical or horizontal impeller, or Performs one or more controls on the flow rate of internal gases.

Specifically, the control unit 500 controls the forward and reverse rotation of the vertical or horizontal impellers 320 and 340, stirs the fine powder to be sputtered coated, and simultaneously vibrates the fine powder by ultrasonic waves to minimize agglomeration, thereby forming the surface of the fine powder. Control can be performed to maximize coating uniformity, thickness, and film quality.

In addition, the control unit 500 controls the forward and reverse rotation of the vertical or horizontal impeller and stirs the fine powder to be sputtered coated, while controlling the sputtering power, internal gas flow rate, and deposition speed to uniformly coat heterogeneous materials. , through which the physical, optical and electrical properties of fine powder can be controlled.

The description of the present invention described above is for illustrative purposes, and those skilled in the art will understand that the present invention can be easily modified into other specific forms without changing the technical idea or essential features of the present invention. will be. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive. For example, each component described as unitary may be implemented in a distributed manner, and similarly, components described as distributed may also be implemented in a combined form.

The scope of the present invention is indicated by the claims described below, and all changes or modified forms derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention.

1: Sputtering device
20: Ultrasonic vibrator
100: Sputtering chamber
110: Vacuum chamber
111: Inlet
113: exhaust port
120: Sputter gun part
121: Sputtergun
123: Target
140: Reaction furnace seating part
200: Reactor driving section
210: Power conversion unit
220: Vertical gear unit
230: Horizontal gear unit
240: Power transmission shaft
300: reactor
310: Vertical stirred reactor
311: Vertical stirring reaction chamber
320; vertical impeller
330: Horizontal stirred reactor
331: Horizontal stirring reaction chamber
340: Horizontal impeller
400: Vacuum pump unit
500: Control unit

Claims (10)

Sputtering includes a vacuum chamber formed with an injection port through which gas to generate plasma is injected, an exhaust port through which air is exhausted, and a reactor seating portion where the reactor is seated, and a sputter gun portion installed at a position opposite the reactor to radiate target plasma. chamber;
A reactor mounted on the reactor seating portion and configured to be detachable, and in which the stored fine powder is stirred and sputter coating is performed;
One or more ultrasonic vibrators that apply vibration to the fine powder stored in the reactor; and
It includes a reactor driving unit that transmits power for stirring the fine powder to the reactor.
At this time, the reactor,
A vertical stirring reaction chamber with an open top and accommodating the fine powder therein; and a vertical impeller disposed vertically inside the vertical stirring reaction chamber and rotating by receiving power from the reactor drive unit to perform vertical stirring of the fine powder;
or
a horizontal stirring reaction chamber with an open top and accommodating the fine powder therein; and a horizontal impeller disposed horizontally inside the horizontal stirring reaction chamber and rotating by receiving power from the reactor drive unit to horizontally agitate the fine powder;
It is a reactor that can be optionally equipped with,
The reactor driving unit,
A power conversion unit having a pair of power transmission shafts and selectively transmitting external rotational power to the pair of power transmission shafts;
A vertical gear unit that converts the rotational force of the power conversion unit among the pair of power transmission shafts into vertical rotational force and transmits it to the vertical impeller of the reactor; and
A sputtering device comprising a horizontal gear unit that converts rotational force from the power conversion unit of the pair of power transmission shafts into horizontal rotational force and transmits it to the horizontal impeller of the reactor. The method of claim 1, wherein the reactor is:
The vertical stirring reaction chamber; vertical impeller; Horizontal stirred reaction chamber; A sputtering device characterized in that it simultaneously includes a horizontal impeller. delete delete According to paragraph 1,
A sputtering device further comprising a control unit that controls the rotation speed of the vertical or horizontal impeller and the direction of rotation of the vertical or horizontal impeller. The method of claim 5, wherein the control unit,
A sputtering device further capable of controlling one or more of sputtering power, exposure time of fine powder to the target plasma, and flow rate of internal gas. In the sputtering coating method using the sputtering device of claim 1,
A reactor installation step of selecting and installing a vertical stirred reactor or a horizontal stirred reactor;
A stirring step of vertically or horizontally stirring the fine powder subject to surface sputtering coating with a vertical or horizontal impeller of the reactor; and
A sputtering coating method comprising: generating target plasma and performing sputtering coating on the surface of the stirred fine powder. The method of claim 7, wherein the reactor mounting step includes:
A sputtering coating method, characterized in that the step of simultaneously mounting the vertical stirred reactor and the horizontal stirred reactor. The method of claim 8, wherein the stirring step,
A sputtering coating method, characterized in that the stirring step is performed by simultaneously operating the vertical stirring reactor and the horizontal stirring reactor. The method of claim 7, wherein the sputter gun unit includes one or more sputter guns,
The sputtering coating step is a sputtering coating method, wherein sputtering coating is performed by generating target plasma using the one or more sputter guns.