KR20230013072A - 직시형 디스플레이용 서브픽셀 발광 다이오드 및 이의 제조 방법 - Google Patents

직시형 디스플레이용 서브픽셀 발광 다이오드 및 이의 제조 방법 Download PDF

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KR20230013072A
KR20230013072A KR1020227044261A KR20227044261A KR20230013072A KR 20230013072 A KR20230013072 A KR 20230013072A KR 1020227044261 A KR1020227044261 A KR 1020227044261A KR 20227044261 A KR20227044261 A KR 20227044261A KR 20230013072 A KR20230013072 A KR 20230013072A
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leds
layer
subset
backplane
substrate
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Korean (ko)
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아누샤 포크리얄
줄랄 테즈칸 오젤
사켓 차다
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나노시스, 인크.
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/012—Manufacture or treatment of active-matrix LED displays
    • H01L25/0753—
    • H01L27/156—
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
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    • H10H20/01—Manufacture or treatment
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    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
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    • H10H20/80—Constructional details
    • H10H20/85—Packages
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    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H29/01—Manufacture or treatment
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    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H10H29/49—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/832—Electrodes
    • H10H29/8322—Electrodes characterised by their materials
    • H10H29/8325—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H01L2924/12041—
    • H01L2933/0025—
    • H01L2933/0066—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/036—Manufacture or treatment of packages
    • H10H29/0364—Manufacture or treatment of packages of interconnections

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KR1020227044261A 2020-05-18 2021-05-11 직시형 디스플레이용 서브픽셀 발광 다이오드 및 이의 제조 방법 Pending KR20230013072A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063026454P 2020-05-18 2020-05-18
US63/026,454 2020-05-18
PCT/US2021/031868 WO2021236382A1 (en) 2020-05-18 2021-05-11 Subpixel light emitting diodes for direct view display and methods of making the same

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KR20230013072A true KR20230013072A (ko) 2023-01-26

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US (2) US11973172B2 (https=)
EP (1) EP4154324B1 (https=)
JP (1) JP7611271B2 (https=)
KR (1) KR20230013072A (https=)
CN (1) CN115989590A (https=)
TW (1) TWI893113B (https=)
WO (1) WO2021236382A1 (https=)

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CN114927458B (zh) * 2022-05-26 2025-07-25 广东省科学院半导体研究所 芯片转移方法、Micro-LED显示器件及制作方法
WO2024247230A1 (ja) * 2023-06-01 2024-12-05 日本電信電話株式会社 半導体光電極の製造方法

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CN115989590A (zh) 2023-04-18
US20210359186A1 (en) 2021-11-18
US11973172B2 (en) 2024-04-30
EP4154324B1 (en) 2026-01-21
JP2023526833A (ja) 2023-06-23
JP7611271B2 (ja) 2025-01-09
TWI893113B (zh) 2025-08-11
TW202209626A (zh) 2022-03-01
EP4154324A4 (en) 2024-06-12
EP4154324A1 (en) 2023-03-29
WO2021236382A1 (en) 2021-11-25
US20240274772A1 (en) 2024-08-15
US12439757B2 (en) 2025-10-07

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