KR20230012452A - Manufacturing method of semiconductor device - Google Patents

Abstract

A method for manufacturing a semiconductor chip capable of sufficiently suppressing the formation of a conductive material on the bump formation surface of a semiconductor wafer even if the conductive material for forming the shield layer is returned to the bump formation surface side of the semiconductor wafer. A method for manufacturing a semiconductor device including the following step (A). Step (A): A step of forming a shield layer on a semiconductor chip in which the bump formation surface of a semiconductor wafer on which bumps are formed is protected with a protective layer made of a cured product of a curable resin, wherein at least either of the bumps or the bump formation surface is A step of forming a shield layer on at least a part of a portion of the semiconductor chip exposed from the coating sheet in a state covered by the taking sheet

Description

Manufacturing method of semiconductor device

The present invention relates to a method for manufacturing a semiconductor device. More specifically, the present invention relates to a method for manufacturing a semiconductor device in which a cured product of a curable resin is formed as a protective layer.

Conventionally, when a multi-pin LSI package used for MPUs, gate arrays, etc. is mounted on a printed wiring board, it is a semiconductor device having a plurality of electronic components, and the connection pad portion is made of eutectic solder, high-temperature solder, gold, etc. Convex The one in which the upper electrode (hereinafter referred to as "terminal" in this specification) is used is used. Then, a mounting method is adopted in which the terminals are brought into contact with each other on the chip mounting board to the terminal portions corresponding to each other, and are melted/diffusion bonded.

With the spread of personal computers, the Internet has become common, and now, smartphones and tablet terminals are also connected to the Internet, and the scene of transmitting digitized images, music, photos, text information, etc. through the Internet by wireless communication technology is gradually increasing. It is increasing. Furthermore, IoT (Internet of Things) is widespread, making semiconductor devices such as sensors, RFID (Radio frequency identifier), MEMS (Micro Electro Mechanical Systems), and wireless components smarter in various application fields such as home appliances and automobiles. A revolutionary revolution is about to be brought about in packaging technology for use.

[0002] As electronic devices continue to evolve, the level of demand for semiconductor devices is increasing year by year. In particular, when trying to respond to demands for high performance, miniaturization, high integration, low power consumption, and low cost, two measures of heat and noise become important points.

In response to such heat countermeasures and noise countermeasures, for example, a method of forming a shield layer by covering a semiconductor wafer with a conductive material and having terminal electrodes (bumps) formed on the semiconductor wafer is employed. there is.

Formation of such a shield layer is carried out in a state where bumps formed on a semiconductor wafer are covered with a sheet for covering bumps (see Patent Document 1, for example).

International Publication No. 2020/032175

However, in such a conventional shield layer formation, there is a problem that the conductive material for forming the shield layer goes around to the bump formation surface side of the semiconductor wafer, and the bump formation surface is destroyed when energized.

The present invention has been made in view of such a problem, and even if the conductive material for forming the shield layer goes back to the bump formation surface side of the semiconductor wafer, the semiconductor device can sufficiently suppress the formation of the conductive material on the bump formation surface. It is an object to provide a manufacturing method for

The inventors of the present invention and the like perform shield layer formation on a semiconductor chip in which the bump formation surface of the semiconductor wafer is covered with a resin layer made of a cured product of a curable resin, so that the conductive material for forming the shield layer is applied to the bump formation surface of the semiconductor wafer. Even if it turns to the side, it was found that the formation of the conductive material on the bump formation surface can be sufficiently suppressed, and the present invention was completed.

That is, the present invention relates to the following [1] to [15].

[1] A method for manufacturing a semiconductor device including the following step (A).

Step (A): A step of forming a shield layer on a semiconductor chip in which the bump formation surface of a semiconductor wafer having bumps is protected with a protective layer made of a cured product of a curable resin, wherein at least one of the bumps and the bump formation surface is A step of forming a shield layer on at least a part of a portion of the semiconductor chip exposed from the covering sheet in a state of being covered with the covering sheet

[2] The method for manufacturing the semiconductor device according to [1], further comprising the following step (B).

Step (B): Step of peeling the covering sheet from at least one of the bumps and the semiconductor wafer after forming the shield layer on the semiconductor chip in the step (A)

[3] In [1] or [2], which further includes a step (C) of manufacturing the semiconductor chip, wherein the step (C) includes the following steps (C1) to (C3) in this order A method for manufacturing the described semiconductor device.

Step (C1): Step of forming a curable resin layer on the bump formation surface

Step (C2): Step of curing the curable resin layer to form the protective layer

Step (C3): A step of cutting the semiconductor wafer on which the protective layer is formed into pieces to obtain a semiconductor chip in which the bump formation surface is protected by the protective layer

[4] The method of manufacturing the semiconductor device according to [3], wherein the step (C1) includes the following steps (C1-1) and (C1-3).

Step (C1-1): Attaching a layered product for forming a protective layer having a laminated structure in which a support sheet and a curable resin layer are laminated on the bump formation surface with the curable resin layer serving as the sticking surface. process

Step (C1-3): Step of peeling the support sheet from the laminate for forming a protective layer and forming the curable resin layer on the bump formation surface

[5] The method of manufacturing the semiconductor device according to [4], wherein the step (C1) further includes the following step (C1-2).

Step (C1-2): A step of grinding the surface of the semiconductor wafer opposite to the bump formation surface

[6] The method of manufacturing the semiconductor device according to [3] or [4], wherein the step (C) further includes a step (C0) after the step (C2).

Step (C0): A step of grinding the surface of the semiconductor wafer opposite to the bump formation surface

[7] The method of manufacturing the semiconductor device according to any one of [3] to [6], wherein in the step (C3), the bump formation surface side is cut into individual pieces.

[8] The method of manufacturing the semiconductor device according to any one of [3] to [6], wherein in the step (C3), the semiconductor device is cut into pieces from the side opposite to the bump formation surface.

[9] The method described in [1] or [2], which further includes a step (C′) of manufacturing the semiconductor chip, wherein the step (C′) includes the following steps (C4) to (C8) A method of manufacturing a semiconductor device.

Step (C4): Step of preparing a semiconductor chip fabrication wafer in which grooves as division lines are formed on the bump formation surface without reaching the surface opposite to the bump formation surface

Step (C5): A step of coating the bump formation surface of the semiconductor chip fabrication wafer with the curable resin and burying the curable resin in the groove portion formed in the semiconductor chip fabrication wafer

Step (C6): A step of grinding the surface of the semiconductor chip fabrication wafer on the side opposite to the bump formation surface

Step (C7): A step of curing the curable resin to obtain a semiconductor chip fabrication wafer with the protective layer

Step (C8): A step of obtaining a semiconductor chip having the bump formation surface and side surface protected by the protective layer by singling the semiconductor chip fabrication wafer with the protective layer into pieces along the line to be divided

[10] The method of manufacturing the semiconductor device according to [9], wherein in the step (C8), the bump formation surface side is cut into individual pieces.

[11] The method of manufacturing the semiconductor device according to [9], wherein in the step (C8), the semiconductor device is cut into pieces from the side opposite to the bump formation surface.

[12] The method of manufacturing the semiconductor device according to any one of [1] to [11], further including the following step (E1).

Step (E1): A step of individually placing the semiconductor chips on the covering sheet so that at least either of the bumps and the bump formation surfaces are covered with the covering sheet

[13] The method of manufacturing the semiconductor device according to any one of [1] to [11], further including the following step (E2).

Step (E2): A step of placing the semiconductor chips collectively on the covering sheet so that at least either of the bumps and the bump formation surfaces are covered with the covering sheet.

[14] The method for manufacturing the semiconductor device according to any one of [1] to [13], further including the following step (F).

Step (F): Step of expanding the covering sheet on which the semiconductor chips are placed

[15] The method for manufacturing the semiconductor device according to any one of [1] to [11], further comprising steps (G) to (I) below.

Step (G): Step of placing the semiconductor chip on an expansion tape

Step (H): Step of expanding the expansion tape on which the semiconductor chip is mounted

Step (I): Step of transferring the semiconductor chip placed on the expanded tape to the covering sheet

According to the present invention, even if the conductive material for forming the shield layer is turned to the bump formation surface side of the semiconductor wafer, the formation of the conductive material on the bump formation surface can be sufficiently suppressed to provide a method for manufacturing a semiconductor chip. it becomes possible

1 is a process schematic diagram of a method for manufacturing a semiconductor device according to the present invention.
2 is a schematic diagram of a first embodiment of a method for manufacturing a semiconductor device of the present invention.
3 is a schematic cross-sectional view showing an example of a wafer with bumps.
4 is a schematic diagram showing steps (C1-1) and (C1-3) in the first embodiment of the semiconductor device manufacturing method of the present invention.
5A is a diagram for explaining a case where a shield layer is formed on a portion of a semiconductor chip exposed from a covering sheet in a state where bumps and bump formation surfaces are covered with a covering sheet.
Fig. 5B is a diagram for explaining a case where a shield layer is formed on at least a part of a portion exposed from the covering sheet of a semiconductor chip in a state where a part of the bump formation surface is covered with the covering sheet.
Fig. 6 is a cross-sectional view schematically showing an example of a laminate for forming a covering sheet used in the method for manufacturing a semiconductor device of the present invention.
7 is a schematic diagram of a second embodiment of a method for manufacturing a semiconductor device of the present invention.
8 shows a schematic diagram of a third embodiment of a method for manufacturing a semiconductor device of the present invention.
9 shows a schematic diagram of a fourth embodiment of a semiconductor device manufacturing method of the present invention.
10 is a top view showing an example of a semiconductor chip fabrication wafer prepared in step (C4).
11 is a schematic cross-sectional view showing an example of a semiconductor chip fabrication wafer prepared in step (C4).
12 is a diagram showing an outline of the step (C5).
13 is a diagram showing an outline of steps (C6) to (C8).
Fig. 14 shows a schematic diagram of a fifth embodiment of a method for manufacturing a semiconductor device of the present invention.
Fig. 15 shows a schematic diagram of a sixth embodiment of a semiconductor device manufacturing method of the present invention.

In this specification, "active ingredient" refers to a component excluding diluent solvents, such as water and an organic solvent, among the components contained in the target composition.

In addition, in this specification, "(meth)acrylic acid" shows both "acrylic acid" and "methacrylic acid", and other similar terms are also the same.

In addition, in this specification, "substituted amino group" means the group formed by replacing 1 or 2 hydrogen atoms of an amino group with groups other than a hydrogen atom.

In addition, in this specification, a weight average molecular weight and a number average molecular weight are polystyrene conversion values measured by the gel permeation chromatography (GPC) method.

In addition, in this specification, the lower limit value and upper limit value described step by step for a preferable numerical range (for example, ranges such as content) can be independently combined. For example, from the description of "preferably 10 to 90, more preferably 30 to 60", "preferably lower limit value (10)" and "more preferable upper limit value (60)" are combined to obtain "10 to 60" You may.

[Method of manufacturing semiconductor chip of the present invention]

A process schematic diagram of the method for manufacturing a semiconductor chip of the present invention is shown in FIG. 1 .

The method for manufacturing a semiconductor chip of the present invention includes a step (C) ("steps (C1) to (C3)") or a step (C') ("steps (C4) to (C8)") of manufacturing a semiconductor chip; It is preferable to include the following process (A) and the following process (B) in this order.

Step (A): A step of forming a shield layer on a semiconductor chip in which the bump formation surface of a semiconductor wafer with bumps is protected with a protective layer made of a cured product of a curable resin, wherein at least one of the bumps and the bump formation surface is for coating A process of forming a shield layer on at least a part of a portion exposed from the sheet for coating a semiconductor chip in a state covered with a sheet

Step (B): After forming the shield layer on the semiconductor chip in step (A), the step of peeling the covering sheet from at least one of the bumps and the semiconductor wafer

In addition, the following process (E1) or the following process (E2) and the following process (F) are arbitrarily introduced between process (C) or process (C') and process (A).

Step (E1): A step of individually placing semiconductor chips on a covering sheet so that at least one of the bumps and bump formation surfaces is covered with the covering sheet.

Step (E2): A step of placing semiconductor chips collectively on a covering sheet so that at least one of the bumps and bump formation surfaces is covered with the covering sheet

Step (F): Step of expanding the covering sheet on which the semiconductor chips are placed

Among the above steps, only the step (A) is an essential step, and the other steps are arbitrary steps.

A semiconductor chip capable of sufficiently suppressing the formation of the conductive material on the bump formation surface of the semiconductor wafer is obtained by the manufacturing method including the above steps, even if the conductive material for forming the shield layer is returned to the bump formation surface side of the semiconductor wafer. lose

Hereinafter, the manufacturing method of the semiconductor chip of this invention is explained in detail for every embodiment.

In addition, in the following description, "semiconductor chip" is simply referred to as "chip".

<First Embodiment>

2 is a schematic diagram of a first embodiment of a method for manufacturing a semiconductor device of the present invention.

In the first embodiment, as shown in FIG. 2 , step (C) (step (C1-1), step (C1-2), step (C1-3), step (C2), step (C-X), step (C3)), step (E1), step (A), and step (B) are performed in this order.

<<Process (C)>>

Step (C) is a step of manufacturing a semiconductor chip, and generally includes the following step (C1), the following step (C2), and the following step (C3) in this order.

Step (C1): Step of forming a curable resin layer on the bump formation surface

Step (C2): Step of curing the curable resin layer to form a protective layer

Step (C3): A step of dicing a semiconductor wafer with a protective layer into pieces to obtain a semiconductor chip whose bump formation surface is protected by a protective layer

(Process (C1))

In step (C1), a curable resin layer is formed on the bump formation surface of the semiconductor wafer provided with bumps. The method for forming the curable resin layer is not particularly limited, and examples thereof include a method in which a curable resin composition described later is applied to a bump formation surface of a semiconductor wafer having bumps and then dried.

((semiconductor wafer with bumps))

3 shows an example of a semiconductor wafer having bumps used in the method of manufacturing a semiconductor device of the present invention. The semiconductor wafer 10 provided with bumps equips the circuit surface 11a of the semiconductor wafer 11 with bumps 12 . The bump 12 is normally formed in multiple numbers.

In the following description, a "semiconductor wafer with bumps" is also referred to as a "wafer with bumps" or a "wafer for producing semiconductor chips." In the following description, a "semiconductor wafer" is also referred to as a "wafer", and a "circuit surface" is also referred to as a "bump formation surface".

The shape of the bump 12 is not particularly limited, and may be any shape as long as it can be brought into contact with and fixed to an electrode or the like on a chip mounting substrate.

For example, although the bump 12 is made into a spherical shape in FIG. 3, the bump 12 may be a spheroidal shape. The spheroid may be, for example, a spheroid extending in a vertical direction with respect to the bump formation surface 11a of the wafer 11, or a spheroid extending in a horizontal direction with respect to the bump formation surface 11a of the wafer 11. It may be a spheroid. Moreover, the bump 12 may be a pillar (pillar) shape.

The height of the bump 12 is not particularly limited, and is, for example, 30 to 300 µm, preferably 60 to 250 µm, and more preferably 80 to 200 µm.

In addition, in this specification, "height of the bump 12" means the height at the part which exists in the highest position from the bump formation surface 11a, when paying attention to one bump.

The number of bumps 12 is not particularly limited, and is appropriately changed according to design requirements.

The wafer 11 is, for example, a semiconductor wafer on which circuits such as wirings, capacitors, diodes, and transistors are formed. The material of the wafer is not particularly limited, and examples thereof include silicon wafers, silicon carbide wafers, compound semiconductor wafers, glass wafers, and sapphire wafers.

The size of the wafer 11 is usually 8 inches (diameter 200 mm) or more, preferably 12 inches (diameter 300 mm) or more, more preferably 400 mm or more, still more preferably is 500 mm or more, particularly preferably 600 mm or more. In addition, the shape of the wafer is not limited to a circular shape, and may be a square shape such as a square or a rectangle. In the case of a prismatic wafer, it is preferable that the length of the longest side of the size of the wafer 11 is within the range of the size (diameter) from the viewpoint of increasing batch processing efficiency.

The thickness of the wafer 11 is, for example, 300 μm or more, preferably 400 μm or more, from the viewpoint of suppressing warpage of the wafer 11 due to curing the curable resin layer in the step (C2). It is preferably 500 μm or more, more preferably 600 μm or more. In addition, it is preferable that the wafer 11 is not subjected to a thinning process by grinding the back side.

The ratio of the size and thickness of the wafer 11 [wafer size (diameter)/wafer thickness] is preferably 1000 or less, more preferably 700 or less, even more preferably 500 or less, still more preferably 400 or less, Furthermore, it is 300 or less more preferably. Also, the ratio of the size and thickness of the wafer 11 [wafer size (diameter)/wafer thickness] is usually 100 or more, preferably 200 or more.

Here, as an example of the manufacturing method of the semiconductor device of the present invention, the formation of the curable resin layer is preferably performed using a laminate for forming a protective layer having a laminated structure in which a support sheet and a curable resin layer are laminated.

Specifically, the step (C1) preferably includes the following steps (C1-1) and (C1-3), and may further include the following step (C1-2).

Step (C1-1): A step of attaching a layered product for forming a protective layer having a laminated structure in which a support sheet and a curable resin layer are laminated on the bump formation surface with the curable resin layer as the sticking surface

Step (C1-2): A step of grinding the surface opposite to the bump formation surface in a state where the laminate for forming a protective layer is formed on the bump formation surface

Step (C1-3): Step of peeling the support sheet from the laminate for forming a protective layer to form a curable resin layer on the bump formation surface

Steps (C1-1), (C1-2) and (C1-3) are described in detail below.

((Process (C1-1)))

In step (C1-1), a layered product for forming a protective layer having a laminated structure in which a support sheet and a curable resin layer are laminated is applied to the bump formation surface with the curable resin layer serving as the sticking surface.

In step (C1-1), the support sheet constituting the laminate for forming a protective layer is not particularly limited as long as it is a sheet-like member capable of supporting the curable resin layer. For example, the support sheet may be a support substrate, a release film obtained by subjecting one side of the support substrate to a release treatment, or may be a laminate comprising a support substrate and an adhesive layer.

When the support sheet is a release film, the curable resin layer is formed on the release treatment surface of the support substrate.

In the case where the support sheet is a laminate of the support substrate and the pressure-sensitive adhesive layer, the curable resin layer is bonded to the pressure-sensitive adhesive layer of the support sheet.

Here, in one example of the semiconductor device manufacturing method of the present invention, as shown in FIG. It is preferable to have a laminated structure laminated in this order. The layered product 30 for forming a protective layer preferably has a laminated structure in which the supporting substrate 31, the buffer layer 32, the pressure-sensitive adhesive layer 33, and the curable resin layer 20 are laminated in this order. .

When the laminate 30 for forming a protective layer is pressed against the bump formation surface 11a of the wafer 10 with bumps using the curable resin layer 20 as a bonding surface, the laminate 30 for forming a protective layer The curable resin layer 20, the pressure-sensitive adhesive layer 33, and the buffer layer 32 are pressed by the bumps 12. Therefore, at the initial stage of compression, the curable resin layer 20, the pressure-sensitive adhesive layer 33, and the buffer layer 32 are deformed into a concave shape following the shape of the bump 12. Then, when the pressure from the bump 12 continues, the top of the bump 12 finally penetrates the curable resin layer 20 and comes into contact with the support sheet 30a. At this time, the pressure applied to the bumps 12 is dispersed by the pressure-sensitive adhesive layer 33 and the buffer layer 32 of the support sheet 30a, and damage to the bumps 12 is suppressed.

However, the bump 12 does not necessarily have to protrude toward the support sheet 30a side, and may be in a state of being embedded in the curable resin layer 20 . Even in such a state, the top of the bump 12 can be exposed from the protective layer by an exposure process or the like described later.

Here, the support sheet constituting the laminate for forming a protective layer used in the step (C1-1) has a good embedding property for bumps and a layer from the laminate for forming a protective layer in the step (C1-3). Ease of peeling of the support sheet is required.

In one example of the semiconductor device manufacturing method of the present invention, the thickness of the buffer layer 32 included in the support sheet 30a is preferably 100 to 500 μm from the viewpoint of ensuring good embedding of bumps. , more preferably from 150 to 450 μm, more preferably from 200 to 400 μm.

From the viewpoint of the retention (adhesiveness) of the curable resin layer and the peelability after being attached to the wafer bump surface, the pressure-sensitive adhesive layer 33 of the support sheet 30a has a thickness of preferably 5 to 50 μm, and preferably 5 to 30 μm. It is more preferable, and it is more preferable that it is 5-15 micrometers.

In addition, the said process (C1-1) can be carried out using, for example, a surface protection tape sticking device for grinding the back side (“RAD-3520F/12” manufactured by Lintec Corporation).

((Step (C1-2)))

In step (C1-2), the surface opposite to the bump formation surface of the wafer with bumps is ground. In short, the back side of the wafer with bumps is ground to thin the wafer.

Here, the grinding of the step (C1-2) is a part of the step (C1), in a state where the laminate for forming a protective layer is formed on the bump formation surface, and the step (C1-1) described above and the step (C1- 3). Here, as a part of the step (C1), the step after the step (C2) of forming a protective layer by curing the curable resin layer formed on the bump formation surface of the bumped wafer without performing the grinding of the step (C1-2) As (C0), the surface opposite to the bump formation surface of the wafer with bumps may be ground.

The grinding of the back side of the wafer 10 with bumps in the state in which the layered body for forming a protective layer is formed on the bump formation surface in step (C1-2) is, for example, as shown in FIG. 4 (C1-1) Similarly, the bump formation surface 11a side of the wafer 10 with bumps to which the layered body 30 for forming a protective layer is attached is fixed on a stationary table (not shown) such as a chuck table, and the wafer 11 It is implemented by grinding the back surface 11b of the with a grinder (not shown) or the like.

The thickness of the bumped wafer 10 after grinding can be 250 μm or less.

In addition, the said process (C1-2) can be implemented using a grinder polisher ("DGP8761" by Disco Corporation), for example.

((Process (C1-3)))

In step (C1-3), the support sheet is separated from the protective layer forming laminate to form a curable resin layer on the bump formation surface. For example, as shown in FIG. 4 (C1-3), the support sheet 30a having a laminated structure in which the support substrate 31, the buffer layer 32, and the pressure-sensitive adhesive layer 33 are laminated in this order, It is separated from the curable resin layer 20 and separated from the layered product 30 for forming a protective layer. As a result, the curable resin layer 20 is formed on the bump formation surface 11a of the wafer 10 with bumps. The surface opposite to the bump formation surface 11a side of the curable resin layer 20 is exposed.

However, the method of peeling the support sheet 30a from the laminated body 30 for forming a protective layer is not limited to this method. For example, when the pressure-sensitive adhesive layer 33 is a pressure-sensitive adhesive layer formed of an energy ray-curable pressure-sensitive adhesive, a heat-foaming pressure-sensitive adhesive, or a water-swelling pressure-sensitive adhesive, it is protected by energy ray-curing, heat-forming, or water-swelling pressure-sensitive adhesive. You may peel the support sheet 30a from the laminated body 30 for layer formation.

In addition, the said process (C1-3) can be implemented using the tape remover for BG ("RAD-3010F/12" by Lintec Corporation), for example.

The wafer 10 with bumps in which the curable resin layer 20 is formed on the bump formation surface 11a by the step (C1) (steps (C1-1) to (C1-3)), the next step ( provided in C2).

(Process (C2))

In step (C2), the curable resin layer formed on the bump formation surface of the wafer with bumps is cured to form a protective layer. By curing the curable resin layer to form a protective layer, the bump formation surface and bump neck of the wafer with bumps are protected.

A protective layer formed by curing the curable resin layer becomes stronger than the curable resin layer at room temperature. Therefore, the bump formation surface and the bump neck are favorably protected by forming the protective layer.

Curing of the curable resin layer can be performed by either thermal curing or curing by irradiation of energy rays, depending on the type of curable component contained in the curable resin layer.

In addition, in this specification, "energy ray" means the thing which has energy quantum in electromagnetic waves or a charged-particle beam, and an ultraviolet-ray, an electron beam, etc. are mentioned as an example, Preferably it is an ultraviolet-ray.

As conditions in the case of thermal curing, the curing temperature is preferably 80 to 250°C, and the curing time is preferably 1 to 5 hours.

As conditions in the case of performing hardening by energy-beam irradiation, it is set suitably according to the kind of energy-beam to be used.

As light quantity, it is preferable that they are 50 mJ/cm<2> or more and 2000 mJ/cm<2> or less, and it is more preferable that they are 100 mJ/cm<2> or more and 1000 mJ/cm<2> or less. Moreover, it is preferable that it is 50 mW/cm<2> or more and 500 mW/cm<2> or less as illuminance. Moreover, as a light source, a high-pressure mercury lamp, a metal halide lamp, a xenon lamp, a DeepUV lamp, an ultraviolet LED, etc. are mentioned. The peak wavelength is preferably 180 nm or more and 420 nm or less.

Here, in one example of the manufacturing method of the semiconductor device of the present invention, in the process of forming the protective layer by curing the curable resin layer, the curable resin layer is fluidized by heating during thermal curing to improve the flatness of the protective layer. From a viewpoint, it is preferable that a curable resin layer is a thermosetting resin layer. In addition, when the curable resin layer is a thermosetting resin layer, in step (C1), even when the curable resin layer is formed in a state where bumps are not completely penetrated from the curable resin layer and are embedded therein, heating at the time of thermal curing By allowing the curable resin to flow, the top of the bump can be exposed from the protective layer. Also from such a viewpoint, it is preferable that the curable resin layer is a thermosetting resin layer.

The wafer with bumps in which the curable resin layer is cured in the step (C2) and the protective layer is formed on the bump formation surface is subjected to the next step (C3).

Further, in the method for manufacturing a semiconductor device of the present invention, when the curable resin layer is a thermosetting resin layer, a support sheet or a back grind tape constituting the laminate for forming a protective layer (for example, a support substrate, a buffer layer, and an adhesive) The back grind tape in which the layers are laminated in this order) is not exposed to heat during heat treatment for curing the thermosetting resin layer. Accordingly, since the support sheet or the back grind tape is not required to have heat resistance when the thermosetting resin layer is cured, the design freedom of the support sheet or the back grind tape is greatly improved.

Here, before subjecting to the next step (C3), an exposure treatment for exposing the tops of the bumps by removing the protective layer covering the tops of the bumps or the protective layer attached to a part of the tops of the bumps to expose the tops of the bumps (Fig. "Step (C-X)" in 2) may be performed. In addition, a form of reapplying the back grind tape, which is a modification of the fourth embodiment described later (step (C4) → step (C5) → step (C-Y) → step (C7) → step (C5) → step (C6) → step (C-Y)→Step (8)→Step (E1)→Step (A)→Step (B)), the exposure treatment (Step (C-X)) may be performed after Step (C7), or the second step You may carry out after (C-Y).

As an exposure process which exposes the top part of a bump, etching process, such as a wet etching process and a dry etching process, polishing process, etc. are mentioned, for example.

Here, as a dry etching process, a plasma etching process (plasma cleaning) etc. are mentioned, for example. Plasma etching treatment is sometimes performed under high-temperature conditions. However, when plasma etching treatment is performed under high-temperature conditions, since the curable resin layer is already cured and a protective layer is formed, the curable resin layer is cured by the high-temperature conditions of the plasma etching treatment. Curing shrinkage does not occur, and therefore, warpage of the wafer accompanying curing shrinkage of the curable resin layer does not occur.

Note that the exposure treatment may be performed for the purpose of retracting the protective layer until the top of the bump is exposed when the top of the bump is not exposed on the surface of the protective layer.

(Process (C3))

In step (C3), the wafer with the bumps on which the protective layer is formed is cut into pieces to obtain a semiconductor chip whose bump formation surface is protected by the protective layer. Here, in the first embodiment shown in Fig. 2, the individualization is performed by cutting from the bump formation surface side.

Further, in the step (C3), for example, using a multi-function wafer mounter ("RAD-2510F/12" manufactured by Lintec Corporation), a wafer with bumps having a protective layer is placed on a dicing tape or the like It can be done by doing

Cutting can be appropriately performed by employing a conventionally known method such as blade dicing or laser dicing.

((formation of division origin))

The step (C3) may include a step of forming a dividing starting point for singling the semiconductor wafer with bumps.

As a method of forming the dividing starting point for singling a bumped semiconductor wafer into pieces, for example, a sun dicing method and a stealth dicing (registered trademark) method are exemplified.

-Sun dicing method-

In the sun-dicing method, grooves 13 are formed in the bump formation surface 11a of the wafer 10 with bumps along lines to be divided, and the back surface 11b of the wafer 10 with bumps is ground. This is a method in which the wafer 10 with bumps is separated into pieces by performing a thinning process on the wafer 10 with bumps until at least the grooves 13 are reached.

In the sun-dicing method, the dividing starting point for singling the wafer 10 with bumps is a groove.

Here, the groove formation is preferably performed after the step (C2), that is, after the protective layer 40 is formed on the bump formation surface 11a of the wafer 10 with bumps. In this case, the groove is preferably formed from the surface of the protective layer 40 toward the inside of the wafer 11 of the wafer 10 with bumps. In this way, the bumped wafer 10 on which the protective layer 40 is formed can be easily separated into pieces in a state where the protective layer is formed.

Further, after forming grooves from the bump formation surface 11a of the wafer 10 with bumps toward the inside of the wafer 11, a protective layer is applied to the bump formation surface 11a of the wafer 10 with bumps. Even when (40) is formed, it is possible to separate the bumped wafer 10 on which the protective layer 40 is formed into pieces in a state where the protective layer 40 is formed. That is, after grinding the back surface 11b of the wafer 10 with bumps to thin the wafer 10 with bumps until at least grooves are reached, by applying an external force such as a pressing force, the grooves are formed. Using as the splitting starting point, the protective layer 40 is also cut together with the wafer 10 with bumps, so that the wafer 10 with bumps on which the protective layer 40 is formed is obtained. It can be reorganized in the state.

-Stealth dicing method-

The stealth dicing method is a method in which a modified region is formed inside the wafer of a wafer with bumps by means of laser light, and the wafer with bumps is divided into pieces using the modified region as a division starting point.

Specifically, by irradiating a laser beam to the wafer 11 of the wafer 10 with bumps by aligning the light convergence point inside the wafer, the modified region by multiphoton absorption is formed as the division starting point. Then, by means of this modified region, a starting point region for cutting is formed inside a predetermined distance from the laser beam incident surface along the line along which the wafer 10 with bumps is to be divided. After thinning the wafer 10 with bumps by grinding the back side, it is cut with a processing pressure such as a grindstone, divided into individual chips, and separated into individual chips.

In the case where the modified region is formed before the step (C1), the laser beam incident surface may be the bump formation surface 11a or the back surface 11b of the wafer 10 with bumps, but the wafer 10 with bumps From the viewpoint of suppressing the influence on circuits and the like formed on the bump formation surface 11a of the laser light incident surface, it is preferable that the back surface 11b of the wafer 10 with bumps.

After the step (C1), the protective layer 40 is formed on the bump formation surface 11a of the wafer 10 with bumps. Moreover, back grind tape etc. may be affixed on the surface of the protective layer 40. Therefore, even when the modified region is formed after the step (C1), it is preferable that the laser beam incident surface is the back surface 11b of the wafer 10 with bumps.

<<Process (E1)>>

In step (E1), the semiconductor chips are individually placed on the covering sheet so that at least one of the bumps and bump formation surfaces is covered with the covering sheet.

Here, by "mounting the semiconductor chips individually on the covering sheet", the space between the semiconductor chips and adjacent semiconductor chips can be appropriately adjusted, and the step (F) described later can be omitted.

In addition, regarding the &quot;state covered with the coating sheet&quot;, for example, in FIG. 5A, the bumps 12 and the protective layer 40 formed on the bump formation surface 11a cover the coating sheet 80. 5B, a part of the protective layer 40 formed on the bump formation surface 11a is covered with the covering sheet 80.

First, for example, as shown in Fig. 5A, the semiconductor chip 100 is pressed against the covering sheet 80 with the side of the bumps 12, that is, the bump formation surface 11a facing downward, The bump 12 is buried in the taking sheet 80.

At this time, the covering sheet 80 is brought into contact with the bumps 12 of the semiconductor chip 100, and the semiconductor chip 100 is pressed against the covering sheet 80. In this way, the outermost surface of the covering sheet 80 is sequentially pressed against the protective layer 40 formed on the surface of the bumps 12 and the bump formation surface 11a. At this time, by heating the covering sheet 80, the covering sheet 80 is softened and spreads between the bumps 12 so as to cover the bumps 12, forming a protective layer formed on the bump formation surface 11a. While adhering to the bump 40, the surface of the bump 12, in particular, the surface of the vicinity of the protective layer 40 formed on the bump formation surface 11a is covered, and the bump 12 is buried.

In addition, as shown in Fig. 5A, the case where the protective layer 40 formed on the bumps 12 and the bump formation surface 11a is covered with the covering sheet 80 has been described here, but it is limited to this For example, as shown in Fig. 5B, a part of the protective layer 40 formed on the bump formation surface 11a is covered with the covering sheet 80, but the bumps 12 are covered with the covering sheet. It is not necessary to cover the bumps 80, and some of the bumps 12 are covered with the covering sheet 80, but the protective layer 40 formed on the bump formation surface 11a is the covering sheet 80. ) need not be covered.

As a method of pressing the semiconductor chip to the covering sheet, a known method of pressing and attaching various sheets to an object can be applied, and examples thereof include a method using a laminating roller or a vacuum laminator.

There is no particular restriction on the pressure when the semiconductor chip is pressed against the covering sheet, and is preferably 0.1 to 1.5 MPa, more preferably 0.3 to 1.3 MPa. The heating temperature is not particularly limited, and is preferably 30 to 70°C, more preferably 35 to 65°C, still more preferably 40 to 60°C.

(Sheet for coating)

As the coating sheet, a double-sided tape, a single-layer sheet of an adhesive composition (a so-called non-carrier film), an elastomer, or the like is preferably used.

A laminate for forming a covering sheet for forming a covering sheet is used when forming a covering sheet on a semiconductor chip, and a known one as disclosed in, for example, International Publication No. 2020/032175 or the like can be used. can

Fig. 6 is a cross-sectional view schematically showing an example of a laminate for forming a coating sheet used in the method for manufacturing a semiconductor device of the present invention.

In Fig. 6, a laminate 81 for forming a covering sheet includes a viscoelastic layer 82 composed of an embedding layer 83 and an adhesive layer 84 as a covering sheet 80, and a viscoelastic layer 82 A release film 85 is further provided on the outermost layer on the side of the embedding layer 83, and a release film 86 is further provided on the outermost layer on the side of the pressure-sensitive adhesive layer 84 of the viscoelastic layer 82.

In the above laminate 81 for forming a covering sheet, after peeling both release films 85 and 86 and bonding them on a support body, the semiconductor chip of the viscoelastic layer 82 from the side of the pressure-sensitive adhesive layer 84 100 is crimped from the bump 12 side, the bump 12 is buried in the viscoelastic layer 82, and the shield layer 90 can be formed thereon.

The layered product for forming the coating sheet is not limited to that shown in Fig. 6, and may have a part of the structure changed, deleted or added.

Another example of a laminate for forming a coating sheet is, for example, (i) a laminate for forming a coating sheet comprising, in this order, a release film 86, an adhesive layer 84, an embedding layer 83, and a base material. , (ii) a laminate for forming a coating sheet comprising a release film 86, an adhesive layer 84, an embedding layer 83, a substrate, a second adhesive layer (i.e., bonding adhesive layer), and a release film in this order , (iii) a layered product for forming a coating sheet comprising a release film 85, an adhesive layer 84, a base material, a second adhesive layer (ie, bonding adhesive layer), and a release film in this order, (iv) peeling A laminate for forming a covering sheet comprising a film 85, an adhesive layer 84, and a release film 86 in this order, (v) a release film 85, an embedding layer 83, and a release film 86 A laminated body for forming a covering sheet provided in this order is exemplified.

The laminate for forming a coating sheet of (i) above includes a viscoelastic layer 82 composed of an adhesive layer 84 and an embedding layer 83 as a coating sheet 80, and the adhesive layer of the viscoelastic layer 82 The outermost layer on the side of (84) is further equipped with a release film (86), and the side of the embedding layer (83) of the viscoelastic layer (82) is further equipped with a base material.

In the above (i) laminate for forming a coating sheet, the release film 86 is peeled off, and the semiconductor chip 100 is pressed against the embedding layer 83 side of the viscoelastic layer 82 from the bump 12 side. Then, the bump 12 can be buried in the viscoelastic layer 82, and the shield layer 90 can be formed thereon.

The laminate for forming the coating sheet of the above (ii) includes a viscoelastic layer 82 composed of an adhesive layer 84 and an embedding layer 83 as a coating sheet 80, and the adhesive layer of the viscoelastic layer 82 A release film (86) is further provided on the side of (84), a base material is further provided on the side of the embedding layer (83) of the viscoelastic layer (82), and a second pressure-sensitive adhesive is provided on the side opposite to the embedding layer (83) of the base material. A layer (namely, bonding adhesive layer) is further provided, and a peeling film is further provided.

In the above (ii) laminate for forming a covering sheet, the release film is peeled off and fixed to another support (not shown), and the release film 86 is peeled off to form a semiconductor chip on the viscoelastic layer 82. 100 is crimped from the bump 12 side, the bump 12 is buried in the viscoelastic layer 82, and the shield layer 90 can be formed thereon.

Details of each layer constituting the laminate for forming a coating sheet are as described in International Publication No. 2020/032175.

<<Process (A)>>

Step (A) is a step of forming a shield layer on a semiconductor chip in which the bump formation surface of a semiconductor wafer with bumps is protected with a protective layer made of a cured product of a curable resin, wherein at least one of the bumps and the bump formation surface is for coating In the state where the sheet is covered, a shield layer is formed on at least a part of the exposed portion of the semiconductor chip covering sheet.

A shielding layer made of a conductive material is formed by applying a conductive resin to at least a part of the exposed portion of the semiconductor chip coating sheet and further heat-curing it. Methods such as sputtering, ion plating, and spray coating may be used as a method of forming the shield layer by coating with a conductive material.

(Conductive resin (conductive material))

There is no restriction|limiting in particular as a conductive resin (conductive material), For example, copper, nickel, titanium, silver, tin, these alloys, coatings, etc. are mentioned. These may be used individually by 1 type, and may use 2 or more types together.

Among these, copper, nickel, and silver are preferable from the viewpoint of reliability and mass productivity.

<<Process (B)>>

In step (B), after forming the shielding layer on the semiconductor chip, the coating sheet is peeled from at least one of the bump and the semiconductor wafer.

For example, by picking up a semiconductor chip with a shielding layer from the covering sheet, the covering sheet can be separated from at least one of the bumps and the semiconductor wafer, and the semiconductor chip covered with the shielding layer can be taken out.

In the first embodiment, since the shield layer is formed on the semiconductor chip in which the bump formation surface of the semiconductor wafer is covered with a protective layer, the conductive material for forming the shield layer is returned to the bump formation surface side of the semiconductor wafer, and the semiconductor chip Even if it penetrates between the wafer and the coating sheet, it is possible to sufficiently suppress the formation of the conductive material on the bump formation surface.

Further, in the first embodiment, since the bump formation surface of the semiconductor wafer is covered with a protective layer, the amount of embedding of bumps in the covering sheet can be reduced, and furthermore, the covering sheet is separated from the wafer with bumps. It is easy, and generation|occurrence|production of paste|survival at the time of peeling can be suppressed.

<Second Embodiment>

Fig. 7 shows a schematic diagram according to the second embodiment.

In the second embodiment, as shown in FIG. 7 , step (C) (step (C1-1), step (C1-2), step (C1-3), step (C2), step (C-X), step (C3)), step (E2), step (F), step (A), step (B) are performed in this order.

2nd Embodiment differs from 1st Embodiment in the point which process (E2) and process (F) are performed instead of process (E1) mentioned above.

Hereinafter, differences from the first embodiment (step (E2) and step (F)) are described in detail.

<<Process (E2)>>

In step (E2), the semiconductor chips are collectively placed on the covering sheet so that at least one of the bumps and bump formation surfaces is covered with the covering sheet.

Step (E2) can be performed in the same manner as step (E1), except that the semiconductor chips are collectively placed instead of individually placed.

<<Process (F)>>

In step (F), the covering sheet on which the semiconductor chip is mounted is expanded. Here, the covering sheet may be extended in the arrangement direction of the semiconductor chips, or the covering sheet may be radially extended.

In this way, by extending the covering sheet on which the semiconductor chips are mounted, even when the distance between semiconductor chips is narrow, it can be widened to a desired distance.

In addition, expansion of the covering sheet can be performed using, for example, an expander or the like.

Instead of performing the steps (E2) and (F), or in addition to performing the steps (E2) and (F), the following steps (G) to (I) may be performed. Here, in the following step (H), the expansion tape may be expanded in the arrangement direction of the semiconductor chips, or the expansion tape may be expanded radially.

Step (G): Step of placing the semiconductor chip on the expansion tape

Process (H): Process of expanding the expansion tape on which the semiconductor chip is placed

Step (I): Step of transferring the semiconductor chip placed on the expanded tape to the covering sheet

Here, as an expansion tape, well-known expansion tapes, such as the tape for a wafer process described in International Publication No. 2018/003312, can be used, for example.

In the second embodiment, since the shield layer is formed on the semiconductor chip in which the bump formation surface of the semiconductor wafer is covered with the protective layer, the conductive material for forming the shield layer is returned to the bump formation surface side of the semiconductor wafer, and the semiconductor chip Even if it penetrates between the wafer and the coating sheet, it is possible to sufficiently suppress the formation of the conductive material on the bump formation surface.

Further, in the second embodiment, since the bump formation surface of the semiconductor wafer is covered with the protective layer, the amount of bump embedding in the covering sheet can be reduced, and furthermore, the covering sheet can be easily separated from the bumped wafer. , it is possible to suppress the generation of glue remaining at the time of peeling.

<Third Embodiment>

8 shows a schematic diagram according to the third embodiment.

In the third embodiment, as shown in FIG. 8 , step (C) (step (C1-1), step (C1-2), step (C1-3), step (C2), step (C-X), step (C3)), step (F), step (A), and step (B) are performed in this order.

3rd Embodiment differs from 2nd Embodiment in that the process (E2) mentioned above is not implemented and the process (C3) in process (C) is different.

Hereinafter, the difference from 2nd Embodiment (process (C3)) is explained in full detail.

(Process (C3))

In step (C3), the wafer with bumps on which the protective layer is formed is cut from the side opposite to the bump formation surface and separated into individual pieces to obtain a semiconductor chip whose bump formation surface is protected by the protective layer.

Cutting can be appropriately performed by employing a conventionally known method such as blade dicing or laser dicing.

In the step (C3) of the third embodiment, instead of cutting the wafer with bumps with a protective layer from the bump formation surface side and separating it into pieces, the wafer with bumps with a protective layer is cut on the side opposite to the bump formation surface. It can be carried out in the same manner as the step (C3) of the second embodiment (that is, the step (C3) of the first embodiment) except that it is cut into pieces from the first embodiment.

A step of transferring a semiconductor chip by placing a wafer with bumps with a protective layer on a coating sheet, then cutting the wafer with bumps with a protective layer from the side opposite to the bump formation surface and separating it into pieces (E2)) can be omitted.

In the third embodiment, since the shield layer is formed on the semiconductor chip in which the bump formation surface of the semiconductor wafer is covered with a protective layer, the conductive material for forming the shield layer is returned to the bump formation surface side of the semiconductor wafer, and the semiconductor chip Even if it penetrates between the wafer and the coating sheet, it is possible to sufficiently suppress the formation of the conductive material on the bump formation surface.

Further, in the third embodiment, dicing, expansion, and shield layer formation can be carried out in a state where the film is attached to the dicing tape.

Moreover, in 3rd Embodiment, process (E2) can be abbreviate|omitted, and productivity improves.

Further, in the third embodiment, since the bump formation surface of the semiconductor wafer is covered with a protective layer, the amount of bump embedding in the covering sheet can be reduced, and furthermore, the covering sheet can be easily separated from the bumped wafer. , it is possible to suppress the generation of glue remaining at the time of peeling.

<Fourth Embodiment>

Fig. 9 shows a schematic diagram according to the fourth embodiment.

In the fourth embodiment, as shown in Fig. 9, step (C') (step (C4), step (C5), step (C6), step (C-Y), step (C7), step (C-X), step (C8)), step (E1), step (A), and step (B) are performed.

In the fourth embodiment, steps (C4) to (C8) in step (C') are performed instead of (C1) to (C3) in step (C) described above. It is different from the embodiment.

Hereinafter, differences from the first embodiment (steps (C4) to (C8)) will be described in detail.

In addition, steps (C4) to (C8) are usually performed in this order of steps (C4), step (C5), step (C6), step (C7), and step (C8), but the order is changed appropriately There may be, for example, the order of a process (C7) and a process (C8) may be reversed.

(Process (C4))

About an example of the semiconductor wafer prepared in process (C4), a top view is shown in FIG. 10, and a schematic sectional view is shown in FIG.

In step (C4), the groove portion 13 as the line to be divided is formed on the bump formation surface 11a of the semiconductor wafer 11 having the bump formation surface 11a with the bumps 12 on the bump formation surface 11a. A semiconductor wafer (wafer for semiconductor chip production) 10 having bumps formed without reaching the back surface 11b on the opposite side of the wafer is prepared.

In Fig. 10, bumps are not shown.

About the bump 12 and the semiconductor wafer 11, it is the same as that of the bump 12 and the semiconductor wafer 11 demonstrated in 1st Embodiment.

On the bump formation surface 11a of the wafer 10 for semiconductor chip production prepared in step (C4), a plurality of grooves 13 are arranged in a lattice as a line to be divided when the wafer 10 for semiconductor chip production is separated into pieces. It is formed as a phase. The plurality of grooves 13 are cut grooves formed when a pre-dicing method (Dicing Before Grinding) is applied, and are formed at a depth shallower than the thickness of the wafer 11, and the deepest part of the grooves 13 is the wafer 11 It is prevented from reaching the back surface 11b of . The plurality of grooves 13 can be formed by dicing using a conventionally known wafer dicing apparatus equipped with a dicing blade (for example, a dicing saw ("DFD6361" manufactured by Disco Corporation)).

In addition, the plurality of grooves 13 may be formed so that the semiconductor chip to be manufactured has a desired size and shape, and the grooves 13 do not necessarily have to be formed in a lattice shape as shown in FIG. 10 . Moreover, although the size of a semiconductor chip is usually about 0.5 mm x 0.5 mm - 1.0 mm x 1.0 mm, it is not limited to this size.

The width of the groove portion 13 is preferably 10 to 2,000 μm, more preferably 50 to 1,000 μm, still more preferably 100 to 500 μm, from the viewpoint of improving the embedding property of the curable resin 20a; More preferably, it is 100-300 micrometers.

The depth of the groove portion 13 is adjusted according to the thickness of the wafer used and the required chip thickness, and is preferably 30 to 700 μm, more preferably 60 to 600 μm, still more preferably 100 to 500 μm.

The wafer 10 for semiconductor chip production prepared in step (C4) is provided in step (C5).

(Process (C5))

An outline of the step (C5) is shown in FIG. 12 .

In step (C5), for forming a protective layer having a laminated structure in which the support sheet 30a and the layer 20 of the curable resin 20a are laminated on the bump formation surface 11a of the wafer 10 for semiconductor chip production. The layered product 30 is applied by applying pressure with the layer 20 as the sticking surface.

Thereby, as shown in FIG. 12, while coating the bump formation surface 11a of the wafer 10 for semiconductor chip production with curable resin 20a, the groove part formed in the wafer 10 for semiconductor chip production ( 13) The curable resin 20a is embedded.

By embedding the curable resin 20a in the groove 13 formed in the wafer 10 for semiconductor chip production, when the wafer 10 for semiconductor chip production is separated into pieces in step (C8), the side surface of the semiconductor chip The part can be coated with curable resin 20a. In short, a coating material that serves as a precursor of the protective layer 40 covering the side surface of the semiconductor chip, which is necessary in order to improve the strength of the semiconductor chip and suppress peeling of the protective layer 40, in step (C5) can be formed by

In addition, the pressing force at the time of attaching the layered product 30 for forming a protective layer to the wafer 10 for semiconductor chip production is good from the viewpoint of making the embedding of the curable resin 20a in the groove 13 good, It is preferably 1 to 200 kPa, more preferably 5 to 150 kPa, still more preferably 10 to 100 kPa.

In addition, the pressing force at the time of attaching the laminated body 30 for forming a protective layer to the wafer 10 for semiconductor chip production may be suitably fluctuated from the initial stage of attachment to the final stage. For example, from the viewpoint of making the embedding of the curable resin 20a in the groove portion 13 more favorable, it is preferable to lower the pressing force at the initial stage of sticking and gradually increase the pressing force.

In addition, when attaching the layered product 30 for forming a protective layer to the wafer 10 for semiconductor chip production, when the curable resin 20a is a thermosetting resin, the curable resin 20a to the groove portion 13 From the viewpoint of making the embeddability more favorable, it is preferable to perform heating. When the curable resin 20a is a thermosetting resin, the fluidity of the curable resin 20a is temporarily increased by heating, and cured by continuing the heating. Therefore, by heating within a range in which the fluidity of the curable resin 20a is improved, the curable resin 20a can be easily spread throughout the groove portion 13, and the embedding property in the groove portion 13 can be further improved. there is.

The specific heating temperature (sticking temperature) is preferably 50 to 150°C, more preferably 60 to 130°C, still more preferably 70 to 110°C.

In addition, the heat treatment performed on the curable resin 20a is not included in the curing treatment of the curable resin 20a.

In addition, when attaching the laminated body 30 for forming a protective layer to the wafer 10 for semiconductor chip production, it is preferable to carry out in a reduced pressure environment. Thereby, the groove part 13 becomes a negative pressure, and it becomes easy to spread the curable resin 20a in the whole groove part 13 evenly. As a result, the embedding of the curable resin 20a into the groove portion 13 becomes better. The specific pressure in the reduced pressure environment is preferably 0.001 to 50 kPa, more preferably 0.01 to 5 kPa, still more preferably 0.05 to 1 kPa.

In addition, the thickness of the layer 20 of the curable resin 20a in the layered product 30 for forming a protective layer is from the viewpoint of further improving the embedding of the curable resin 20a in the groove portion 13, It is preferably more than 30 μm and less than or equal to 200 μm, more preferably 60 to 150 μm, still more preferably 80 to 130 μm.

Here, it is preferable that the support sheet 30a of the layered product 30 for forming a protective layer has a function as a back grind tape while supporting the curable resin 20a.

In this case, when grinding the back surface 11b of the wafer 11 in a state where the layered product 30 for forming a protective layer is attached, the support sheet 30a functions as a back grind tape, and the back grind It can be made easy to carry out a process.

In addition, the said process (C5) can be carried out using, for example, a surface protection tape sticking device for grinding the back side ("RAD-3520F/12" manufactured by Lintec Corporation).

(Process (C6), (C-Y))

Fig. 13 shows a schematic view of steps (C6) to (C8).

In step (C6), as shown in Fig. 13 (1-a), in a state where the laminate 30 for forming a protective layer is attached, the bump formation surface 11a of the wafer 10 for semiconductor chip production and grinds the reverse surface 11b on the opposite side. Next, in a process (C-Y), as shown in FIG. 13(1-b), the support sheet 30a is peeled from the laminated body 30 for forming a protective layer.

The amount of grinding at the time of grinding the back surface 11b of the wafer 10 for semiconductor chip production may be an amount that exposes at least the bottom portion of the groove 13 of the wafer 10 for semiconductor chip production, but further grinding In addition to the wafer 10 for semiconductor chip production, the curable resin 20a embedded in the groove portion 13 may also be ground.

In the fourth embodiment, in the step (C-Y) before the step (C7), in order to peel the support sheet 30a, the curable resin 20a is a thermosetting resin, and in the step (C7) for curing Even when heat treatment is applied, heat resistance is not required for the support sheet 30a. Accordingly, the degree of freedom in design of the support sheet 30a is improved.

In addition, the said process (C6) can be implemented using grinder polisher ("DGP8761" by Disco Corporation), for example.

In addition, the said process (C-Y) can be implemented using the tape remover for BG ("RAD-3010F/12" by Lintec Corporation), for example.

(Process (C7))

In step (C7), specifically, as shown in Fig. 13(1-c), curable resin 20a is cured to obtain wafer 10 for semiconductor chip production with protective layer 40 attached thereto. .

The protective layer 40 formed by hardening curable resin 20a becomes stronger than curable resin 20a at normal temperature. Therefore, by providing the protective layer 40, the bump neck is well protected. In addition, in the step (C8) shown in (1-d) of FIG. 13, the semiconductor chip fabrication wafer 10 with the protective layer 40 is separated into pieces, so that the side surface is also covered with the protective layer 40. A chip can be obtained, and a semiconductor chip with excellent strength is obtained. Also, peeling of the protective layer 40 is suppressed.

The curable resin 20a can be cured by either thermal curing or curing by energy ray irradiation, depending on the type of curable component contained in the curable resin 20a.

In addition, in this specification, "energy ray" means the thing which has energy quantum in electromagnetic waves or a charged-particle beam, and an ultraviolet-ray, an electron beam, etc. are mentioned as an example, Preferably it is an ultraviolet-ray.

As conditions in the case of performing thermal curing, the curing temperature is preferably 90 to 200°C, and the curing time is preferably 1 to 3 hours.

As conditions in the case of performing hardening by energy ray irradiation, the illuminance is preferably 170 to 250 mw/cm 2 , which is appropriately set according to the type of energy ray to be used, for example, when using ultraviolet rays, and the amount of light is preferably 300 to 3,000 mJ/cm 2 .

Here, in the process of forming the protective layer 40 by curing the curable resin 20a, in step (C5), air bubbles that may get in when filling the groove 13 with the curable resin 20a are removed. From the standpoint of removal, the curable resin 20a is preferably a thermosetting resin. That is, when the curable resin 20a is a thermosetting resin, the fluidity of the curable resin 20a is temporarily increased by heating, and cured by continuing the heating. By using this phenomenon, when the fluidity of the curable resin 20a is increased, bubbles or the like that may get in when the groove portion 13 is filled with the curable resin 20a are removed, and the groove portion of the curable resin 20a is removed. After making the embeddability to (13) more favorable, the curable resin 20a can be hardened.

Moreover, it is preferable that curable resin 20a is energy-beam curable resin from a viewpoint of shortening of hardening time.

In addition, the details of the curable resin 20a for forming the protective layer 40 are mentioned later.

(Process (C8))

In the step (C8), specifically, as shown in (1-d) of FIG. 13, the protective layer 40 is formed in the groove portion of the protective layer 40 of the semiconductor chip fabrication wafer 10, The portion with the bump is cut along the line to be divided from the side of the bump formation surface, and separated into pieces. Here, in the step (C8), the cut is made from the side of the bump formation surface, but it may be cut from the side opposite to the bump formation surface and separated into pieces.

Cutting can be appropriately performed by employing a conventionally known method such as blade dicing or laser dicing.

Thereby, the semiconductor chip 100 in which at least bump formation surface 11a and side surface are covered with the protective layer 40 can be obtained.

The semiconductor chip 100 has excellent strength because the bump formation surface 11a and side surfaces are covered with the protective layer 40 . In addition, since the bump formation surface 11a and the side surface are covered with the protective layer 40, the bonding surface (interface) between the bump formation surface 11a and the protective layer 40 is on the side surface of the semiconductor chip 100. is not exposed to Among the bonding surfaces (interfaces) between the bump formation surface 11a and the protective layer 40, the exposed portion exposed on the side surface of the semiconductor chip 100 tends to be the starting point of film separation. Since the semiconductor chip 100 does not have the exposed portion, film separation from the exposed portion is well suited in the process of cutting the wafer 10 for semiconductor chip production to manufacture the semiconductor chip 100 or after production. It doesn't happen. Thus, the semiconductor chip 100 in which peeling of the protective layer 40 is suppressed is obtained.

In addition, in the step (C8), when cutting the portion formed in the groove part of the protective layer 40 of the wafer 10 for semiconductor chip production with the protective layer 40 attached along the division line, protection It is preferred that layer 40 be transparent. Since the semiconductor wafer 11 can be seen through when the protective layer 40 is transparent, the visibility of the line to be divided is ensured. Therefore, it becomes easy to cut along the division line.

Further, in the step (C8), for example, the wafer 10 for semiconductor chip production with a protective layer is placed on a dicing tape or the like using a multi-function wafer mounter ("RAD-2510F/12" manufactured by Lintec Corporation). It can be implemented by placing on top.

Next, the laminate 30 for forming a protective layer used in the fourth embodiment of the semiconductor device manufacturing method of the present invention will be described. However, the layered product 30 for forming a protective layer may be used in embodiments other than the fourth embodiment.

(Configuration of laminate 30 for forming protective layer)

The laminate 30 for forming a protective layer used in the fourth embodiment of the semiconductor device manufacturing method of the present invention includes a layer 20 of curable resin 20a on one side of a support sheet 30a. . By forming the layer 20 of the curable resin 20a on one side of the support sheet 30a, the layer 20 of the curable resin 20a is conveyed as a product package or the curable resin 20a is When conveying the layer 20, the layer 20 of the curable resin 20a is stably supported and protected.

In addition, specific structural examples of the layered product 30 for forming a protective layer are shown below.

The layered product 30 for forming a protective layer includes a support sheet 30a and a layer 20 of a curable resin 20a formed on one surface of the support sheet 30a.

Further, in the layered product 30 for forming a protective layer, the support sheet 30a is an adhesive sheet in which a support substrate 31 and an adhesive layer 33 are laminated, and the adhesive layer 33 and the curability of the adhesive sheet are The layer 20 of resin 20a may be bonded together.

Further, in the layered product 30 for forming a protective layer, the support sheet 30a is a pressure-sensitive adhesive sheet in which a support substrate 31, a buffer layer 32 (intermediate layer), and a pressure-sensitive adhesive layer 33 are laminated in this order, The pressure-sensitive adhesive layer 33 of the pressure-sensitive adhesive sheet and the layer 20 of the curable resin 20a may be bonded together. An adhesive sheet in which the support substrate 31, the buffer layer 32 (intermediate layer), and the adhesive layer 33 are laminated in this order can be suitably used as a back grind tape. That is, since the layered product 30 for forming a protective layer has the back grind tape as the support sheet 30a, the layer 20 of the curable resin 20a of the layered product 30 for forming a protective layer and the semiconductor chip After attaching the bump formation surface of the wafer for fabrication, when grinding and thinning the back surface of the wafer for semiconductor chip fabrication, it can use suitably.

Hereinafter, the curable resin 20a used for the layered product 30 for forming a protective layer and the support sheet 30a are described.

-curable resin (20a)-

The curable resin 20a is a film-like resin used for filling the grooves formed in the wafer for semiconductor chip production while covering the bump formation surface of the wafer for semiconductor chip production, by heating or energy ray irradiation. By hardening, the protective layer 40 is formed. That is, the curable resin 20a may be a thermosetting resin film 20a-1 cured by heating or an energy-beam curable resin film 20a-2 cured by energy-beam irradiation.

The physical properties of curable resin 20a can be adjusted by adjusting any one or both of the type and amount of components contained in curable resin 20a.

Hereinafter, the thermosetting resin film 20a-1 and the energy ray-curable resin film 20a-2 are described.

--Heat Curable Resin Film (20a-1)--

The thermosetting resin film 20a-1 contains a polymer component (A) and a thermosetting component (B).

The thermosetting resin film 20a-1 is formed from the thermosetting resin composition 20a-1-1 containing a polymer component (A) and a thermosetting component (B), for example.

The polymer component (A) is a component that can be considered to have been formed by a polymerization reaction of a polymerizable compound. In addition, the thermosetting component (B) is a component that can undergo a curing (polymerization) reaction by using heat as a reaction trigger. In addition, a polycondensation reaction is also included in the said hardening (polymerization) reaction.

In addition, in the following description of this specification, "the content of each component in the total amount of the active ingredient of the thermosetting resin composition (20a-1-1)" means "the thermosetting resin composition (20a-1-1) It has the same meaning as "the content of each component of the thermosetting resin film 20a-1 formed of".

---Polymer component (A)---

The thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) contain the polymer component (A).

The polymer component (A) is a polymer compound for imparting film-formability, flexibility, or the like to the thermosetting resin film 20a-1. A polymer component (A) may be used individually by 1 type, and may be used in combination of 2 or more type. When using in combination of 2 or more types of polymer components (A), their combination and ratio can be arbitrarily selected.

Examples of the polymer component (A) include acrylic resin (resin having a (meth)acryloyl group), polyester, urethane resin (resin having a urethane bond), acrylic urethane resin, and silicone resin (resin having a siloxane bond). ), rubber-based resin (resin having a rubber structure), phenoxy resin, and thermosetting polyimide.

Among these, acrylic resin is preferable.

A well-known acrylic polymer is mentioned as an acrylic resin.

The weight average molecular weight (Mw) of the acrylic resin is preferably 10,000 to 2,000,000, more preferably 300,000 to 1,500,000, still more preferably 500,000 to 1,000,000.

When the weight average molecular weight of the acrylic resin is equal to or greater than the above lower limit, the shape stability (temporal stability during storage) of the thermosetting resin film 20a-1 is easily improved. In addition, when the weight average molecular weight of the acrylic resin is equal to or less than the above upper limit, it becomes easy for the thermosetting resin film 20a-1 to follow the uneven surface of the adherend. -1) It is easy to suppress generation of voids and the like between them. Therefore, it is easy to improve not only the coverage of the bump formation surface 11a of the semiconductor wafer 11 but also the embeddability of the grooves 13.

The acrylic resin has a glass transition temperature (Tg) of preferably -60 to 70°C, more preferably -40 to 50°C, still more preferably -30°C to 30°C.

When the glass transition temperature (Tg) of the acrylic resin is equal to or greater than the above lower limit, the adhesive force between the protective layer 40 and the support sheet 30a is suppressed, and the peelability of the support sheet 30a is improved. Moreover, when the glass transition temperature (Tg) of the acrylic resin is equal to or less than the above upper limit value, the adhesive force between the thermosetting resin film 20a-1 and the adherend of the protective layer 40 is improved. Therefore, peeling of the protective layer 40 can be more easily suppressed.

As acrylic resin, it is polymer of 1 type, or 2 or more types of (meth)acrylic acid ester, for example; and copolymers of two or more monomers selected from (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, and N-methylol acrylamide.

As (meth)acrylic acid ester constituting the acrylic resin, for example, methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n- (meth)acrylate Butyl, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, 2-ethyl (meth)acrylate Hexyl, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, (meth)acrylic acid Dodecyl (lauryl (meth)acrylate), tridecyl (meth)acrylate, tetradecyl (meth)acrylate (myristyl (meth)acrylate), pentadecyl (meth)acrylate, hexadecyl (meth)acrylate ((meth)acrylate) palmityl acrylate), heptadecyl (meth)acrylate, and octadecyl (meth)acrylate (stearyl (meth)acrylate), the alkyl group constituting the alkyl ester has a chain structure of 1 to 18 carbon atoms (meth) acrylic acid alkyl ester;

(meth)acrylic acid cycloalkyl esters such as isobornyl (meth)acrylate and dicyclopentanyl (meth)acrylate;

(meth)acrylic acid aralkyl esters such as benzyl (meth)acrylate;

(meth)acrylic acid cycloalkenyl esters such as (meth)acrylic acid dicyclopentenyl ester;

(meth)acrylic acid cycloalkenyloxyalkyl esters such as dicyclopentenyloxyethyl (meth)acrylate;

(meth)acrylic acid imide;

glycidyl group-containing (meth)acrylic acid esters such as glycidyl (meth)acrylate;

Hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, (meth)acrylate ) Hydroxyl group-containing (meth)acrylic acid esters such as 3-hydroxybutyl acrylate and 4-hydroxybutyl (meth)acrylate;

substituted amino group-containing (meth)acrylic acid esters such as N-methylaminoethyl (meth)acrylic acid; etc. can be mentioned.

Among these, copolymerization in which the alkyl group constituting the alkyl ester is a chain structure of 1 to 18 carbon atoms (meth)acrylic acid alkyl ester, a glycidyl group-containing (meth)acrylic acid ester, and a hydroxyl group-containing (meth)acrylic acid ester are combined. A combination of (meth)acrylic acid alkyl esters, preferably chain ones, in which the alkyl groups constituting the alkyl esters have a chain structure of 1 to 4 carbon atoms, (meth)acrylic acid esters containing a glycidyl group, and (meth)acrylic acid esters containing a hydroxyl group It is more preferable that it is one copolymer, and it is more preferable that it is a copolymer combining butyl acrylate, methyl acrylate, glycidyl acrylate, and 2-hydroxyethyl acrylate.

The acrylic resin is obtained by copolymerizing, for example, (meth)acrylic acid ester with at least one monomer selected from (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, and styrene and N-methylolacrylamide. It could be anything.

The monomer constituting the acrylic resin may be used singly or in combination of two or more. When there are two or more types of monomers constituting the acrylic resin, their combination and ratio can be arbitrarily selected.

Acrylic resin may have a functional group bondable to other compounds such as a vinyl group, a (meth)acryloyl group, an amino group, a hydroxyl group, a carboxy group, and an isocyanate group.

The functional group of the acrylic resin may be bonded to another compound via a crosslinking agent (F) described later, or directly bonded to another compound without a crosslinking agent (F). Reliability of a package obtained using the thermosetting resin film 20a-1 tends to be improved when the acrylic resin is bonded to other compounds by the functional group.

Here, in one example of the method for manufacturing the semiconductor device of the present invention, as the polymer component (A), a thermoplastic resin other than the acrylic resin (hereinafter sometimes simply abbreviated as "thermoplastic resin") is used as the acrylic resin. It may be used alone or in combination with an acrylic resin.

By using a thermoplastic resin, the peelability of the protective layer 40 from the support sheet 30a is improved, the thermosetting resin film 20a-1 easily follows the uneven surface of the adherend, and the adherend and Generation of voids or the like between the thermosetting resin films 20a-1 may be further suppressed. Therefore, it is easy to improve not only the coverage of the bump formation surface 11a of the semiconductor wafer 11 but also the embeddability of the grooves 13.

The weight average molecular weight of the thermoplastic resin is preferably 1,000 to 100,000, more preferably 3,000 to 80,000.

The glass transition temperature (Tg) of the thermoplastic resin is preferably -30 to 150°C, more preferably -20 to 120°C.

Examples of the thermoplastic resin include polyester, polyurethane, phenoxy resin, polybutene, polybutadiene, and polystyrene.

A thermoplastic resin may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more types of thermoplastic resins, their combinations and ratios can be arbitrarily selected.

The content of the polymer component (A) is preferably 5 to 85% by mass, more preferably 5 to 80% by mass, based on the total amount of active ingredients of the thermosetting resin composition (20a-1-1).

The polymer component (A) also corresponds to the thermosetting component (B) in some cases. In the present invention, when the thermosetting resin composition (20a-1-1) contains components corresponding to both the polymer component (A) and the thermosetting component (B), the thermosetting resin composition (20a-1 -1) is considered to contain both the polymer component (A) and the thermosetting component (B).

---Heat Curable Component (B)---

The thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) contain a thermosetting component (B).

The thermosetting component (B) is a component for forming the hard protective layer 40 by curing the thermosetting resin film 20a-1.

The thermosetting component (B) may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more types of heat-curable component (B), their combinations and ratios can be arbitrarily selected.

Examples of the heat-curable component (B) include epoxy-based heat-curable resins, heat-curable polyimides, polyurethanes, unsaturated polyesters, and silicone resins. Among these, an epoxy-type thermosetting resin is preferable.

An epoxy-type thermosetting resin consists of an epoxy resin (B1) and a thermosetting agent (B2).

Epoxy-type thermosetting resin may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more epoxy-based thermosetting resins, their combination and ratio can be arbitrarily selected.

・Epoxy Resin (B1)

Examples of the epoxy resin (B1) include known ones, and examples thereof include polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenated products, orthocresol novolac epoxy resins, and dicyclopenta. Diene-type epoxy resins, biphenyl-type epoxy resins, bisphenol A-type epoxy resins, bisphenol F-type epoxy resins, phenylene skeleton type epoxy resins, and difunctional or higher functional epoxy compounds.

Among these, it is preferable to use a polyfunctional type epoxy resin, a dicyclopentadiene type epoxy resin, and a bisphenol F type epoxy resin. Moreover, among polyfunctional type epoxy resins, polyfunctional type aromatic type epoxy resins are preferable.

As the epoxy resin (B1), an epoxy resin having an unsaturated hydrocarbon group may be used. An epoxy resin having an unsaturated hydrocarbon group has higher compatibility with acrylic resin than an epoxy resin having no unsaturated hydrocarbon group. Therefore, the reliability of the package obtained using the thermosetting resin film 20a-1 improves by using the epoxy resin which has an unsaturated hydrocarbon group.

As an epoxy resin which has an unsaturated hydrocarbon group, the compound formed by converting some of the epoxy groups of a polyfunctional epoxy resin into the group which has an unsaturated hydrocarbon group is mentioned, for example. Such a compound is obtained, for example, by subjecting an epoxy group to an addition reaction of (meth)acrylic acid or a derivative thereof. Moreover, as an epoxy resin which has an unsaturated hydrocarbon group, the compound etc. which the group which has an unsaturated hydrocarbon group directly couple|bonded with the aromatic ring etc. which comprise an epoxy resin are mentioned, for example.

The unsaturated hydrocarbon group is an unsaturated group having polymerizability, and specific examples thereof include an ethenyl group (vinyl group), a 2-propenyl group (allyl group), a (meth)acryloyl group, and a (meth)acrylamide group. can Among these, an acryloyl group is preferable.

The number average molecular weight of the epoxy resin (B1) is not particularly limited, but is preferably 300 to 30,000 from the viewpoint of the curability of the thermosetting resin film 20a-1 and the strength and heat resistance of the protective layer 40 after curing. , more preferably 400 to 10,000, still more preferably 500 to 3,000.

The epoxy equivalent of the epoxy resin (B1) is preferably from 100 to 1,000 g/eq, more preferably from 300 to 800 g/eq.

Epoxy resin (B1) may be used individually by 1 type, and may be used in combination of 2 or more type. When two or more types of epoxy resins (B1) are used together, their combinations and ratios can be arbitrarily selected.

・Heat curing agent (B2)

The thermal curing agent (B2) functions as a curing agent for the epoxy resin (B1).

Examples of the thermal curing agent (B2) include compounds having two or more functional groups capable of reacting with epoxy groups in one molecule. Examples of the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxy group, and a group in which an acid group is anhydride, and a phenolic hydroxyl group, an amino group, or a group in which an acid group is anhydride is preferable, It is more preferable that it is a phenolic hydroxyl group or an amino group.

Among the thermal curing agents (B2), examples of the phenolic curing agent having a phenolic hydroxyl group include polyfunctional phenolic resins, biphenols, novolak-type phenolic resins, dicyclopentadiene-based phenolic resins, and aralkylphenolic resins. can be heard

Among the thermal curing agents (B2), examples of the amine-based curing agent having an amino group include dicyandiamide (hereinafter sometimes abbreviated as "DICY") and the like.

Among these, a phenolic curing agent having a phenolic hydroxyl group is preferable, and a novolac type phenolic resin is more preferable.

The thermal curing agent (B2) may have an unsaturated hydrocarbon group.

Examples of the thermal curing agent (B2) having an unsaturated hydrocarbon group include a compound in which a part of the hydroxyl groups of a phenol resin is substituted with a group having an unsaturated hydrocarbon group, or a group having an unsaturated hydrocarbon group directly bonds to an aromatic ring of the phenol resin. The compound etc. which consist of are mentioned. The unsaturated hydrocarbon group in the thermal curing agent (B2) is the same as the unsaturated hydrocarbon group in the epoxy resin having the above-mentioned unsaturated hydrocarbon group.

When using a phenol-based curing agent as the thermal curing agent (B2), from the viewpoint of making it easier to improve the peelability of the protective layer 40 from the support sheet 30a, the thermal curing agent (B2) has a softening point or a glass transition temperature. Higher is preferred.

Among the thermal curing agents (B2), for example, the number average molecular weight of resin components such as polyfunctional phenol resins, novolak-type phenol resins, dicyclopentadiene-based phenol resins, and aralkyl phenol resins is preferably 300 to 30,000, more preferably 400 to 10,000, still more preferably 500 to 3,000.

Among the thermal curing agents (B2), the molecular weight of non-resin components such as biphenol and dicyandiamide is not particularly limited, but is preferably 60 to 500, for example.

A heat curing agent (B2) may be used individually by 1 type, and may be used in combination of 2 or more type. When two or more types of thermal curing agents (B2) are used, their combinations and ratios can be arbitrarily selected.

In the thermosetting resin composition (20a-1-1), the content of the thermosetting agent (B2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 100 parts by mass of the epoxy resin (B1). -200 parts by mass. Curing of the thermosetting resin film 20a-1 advances more easily because content of a thermosetting agent (B2) is more than the said lower limit. In addition, when the content of the thermosetting agent (B2) is equal to or less than the above upper limit, the moisture absorptivity of the thermosetting resin film 20a-1 is reduced, and the reliability of the package obtained using the thermosetting resin film 20a-1 is improved. more improved

In the thermosetting resin composition (20a-1-1), the content of the thermosetting component (B) (the total content of the epoxy resin (B1) and the thermosetting agent (B2)) is 100 parts by mass of the polymer component (A) , is preferably 50 to 1000 parts by mass, more preferably 100 to 900 parts by mass, still more preferably 150 to 800 parts by mass. When the content of the thermosetting component (B) is in such a range, the adhesive force between the protective layer 40 and the support sheet 30a is suppressed, and the peelability of the support sheet 30a is improved.

---Cure Accelerator (C)---

The thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may further contain a curing accelerator (C).

The curing accelerator (C) is a component for adjusting the curing rate of the thermosetting resin composition (20a-1-1).

Examples of the preferable curing accelerator (C) include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5 -Imidazoles such as hydroxymethylimidazole (imidazoles in which one or more hydrogen atoms are substituted with groups other than hydrogen atoms); organic phosphines (phosphine in which one or more hydrogen atoms are substituted with organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; tetraphenyl boron salts such as tetraphenylphosphonium tetraphenyl borate and triphenylphosphine tetraphenyl borate; and the like.

Among these, imidazoles are preferable, and 2-phenyl-4,5-dihydroxymethylimidazole is more preferable.

A hardening accelerator (C) may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more types of hardening accelerators (C), their combinations and ratios can be arbitrarily selected.

In the thermosetting resin composition (20a1-1-1), the content of the curing accelerator (C) in the case of using the curing accelerator (C) is preferably based on 100 parts by mass of the content of the thermosetting component (B). It is 0.01-10 mass parts, More preferably, it is 0.1-5 mass parts. When content of a hardening accelerator (C) is more than the said lower limit, the effect by using a hardening accelerator (C) is more remarkably easy to be acquired. In addition, when the content of the curing accelerator (C) is equal to or less than the above upper limit, the highly polar curing accelerator (C) is, for example, a to-be-adhered body in the thermosetting resin film 20a-1 under high temperature and high humidity conditions. The effect of suppressing segregation by migrating to the bonding interface side with and is enhanced, and the reliability of the package obtained by using the thermosetting resin film (20a-1) is further improved.

---Filling material (D)---

The thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may contain the filler (D).

By containing the filler (D), it becomes easy to adjust the thermal expansion coefficient of the protective layer 40 obtained by curing the curable resin film 20a to an appropriate range, and the package obtained using the thermosetting resin film 20a-1 Reliability is further improved. Moreover, when the thermosetting resin film 20a-1 contains the filler (D), the moisture absorption rate of the protective layer 40 can be reduced or heat dissipation property can be improved.

The filler (D) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler. Preferred inorganic fillers include, for example, powders such as silica, alumina, talc, calcium carbonate, titanium white, bengala, silicon carbide, and boron nitride; Beads which spheroidized these inorganic fillers; surface-modified products of these inorganic fillers; single crystal fibers of these inorganic fillers; Glass fiber etc. are mentioned. Among these, it is preferable that an inorganic filler is silica or an alumina.

A filler (D) may be used individually by 1 type, and may be used in combination of 2 or more type.

When there are two or more types of fillers (D), their combinations and ratios can be arbitrarily selected.

The content of the filler (D) in the case of using the filler (D) is preferably 5 to 80 mass%, more preferably 5 to 80% by mass, based on the total amount of active ingredients of the thermosetting resin composition (20a-1-1) It is 7-60 mass %. Adjustment of said thermal expansion coefficient becomes easier because content of a filler (D) is such a range.

The average particle diameter of the filler (D) is preferably 5 to 1000 nm, more preferably 5 to 500 nm, still more preferably 10 nm to 300 nm. The above average particle diameter is obtained by measuring the outer diameter of one particle at several points and obtaining an average value thereof.

---coupling agent (E)---

The thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may contain a coupling agent (E).

As the coupling agent (E), by using an inorganic compound or an organic compound and one having a functional group capable of reacting, the adhesiveness and adhesion of the thermosetting resin film 20a-1 and the protective layer 40 to the adherend are easily improved. . Therefore, film peeling of the protective layer 40 as a protective layer can be more easily suppressed. Further, by using the coupling agent (E), the protective layer 40 obtained by curing the thermosetting resin film 20a-1 does not impair heat resistance and easily improves water resistance.

The coupling agent (E) is preferably a compound having a functional group capable of reacting with a functional group of the polymer component (A) and the thermosetting component (B), and more preferably a silane coupling agent. Preferred silane coupling agents include, for example, 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropylmethyldiethoxysilane, 3-glycidyloxypropyltriethoxysilane, and 3-glycidyloxypropyltriethoxysilane. Cidyloxymethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-( 2-Aminoethylamino)propyltrimethoxysilane, 3-(2-aminoethylamino)propylmethyldiethoxysilane, 3-(phenylamino)propyltrimethoxysilane, 3-anilinopropyltrimethoxysilane, 3 -Ureidopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl)tetrasulfane, methyltrimethoxysilane, methyltri Ethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, imidazolesilane, etc. are mentioned.

A coupling agent (E) may be used individually by 1 type, and may be used in combination of 2 or more type. When there are 2 or more types of coupling agents (E), their combination and ratio can be arbitrarily selected.

In the thermosetting resin composition (20a-1-1), the content of the coupling agent (E) in the case of using the coupling agent (E) is the total content of the polymer component (A) and the thermosetting component (B) 100 mass It is preferably from 0.03 to 20 parts by mass, more preferably from 0.05 to 10 parts by mass, still more preferably from 0.1 to 5 parts by mass. When the content of the coupling agent (E) is equal to or greater than the above lower limit, the dispersibility of the filler (D) is improved, the adhesion of the thermosetting resin film (20a-1) to the adherend is improved, etc. ) The effect by using is obtained more remarkably. Moreover, generation|occurrence|production of outgas is suppressed more because content of a coupling agent (E) is below said upper limit.

---Crosslinking agent (F)---

As the polymer component (A), when using a polymer component (A) having a functional group such as a vinyl group, a (meth)acryloyl group, an amino group, a hydroxyl group, a carboxy group, or an isocyanate group that can be bonded to other compounds, such as the acrylic resin described above, heat The curable resin film (20a-1) and the thermosetting resin composition (20a-1-1) may contain a crosslinking agent (F) for crosslinking by binding the functional group to another compound.

By crosslinking using the crosslinking agent (F), the initial adhesive force and cohesive force of the thermosetting resin film 20a-1 can be adjusted.

Examples of the crosslinking agent (F) include organic polyvalent isocyanate compounds, organic polyvalent imine compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), and aziridine crosslinking agents (crosslinking agents having an aziridinyl group) and the like. .

As an organic polyhydric isocyanate compound, For example, an aromatic polyhydric isocyanate compound, an aliphatic polyhydric isocyanate compound, and an alicyclic polyhydric isocyanate compound (Hereinafter, these compounds may be collectively abbreviated as "aromatic polyhydric isocyanate compound etc."); Trimers, isocyanurate bodies, and adduct bodies, such as the said aromatic polyhydric isocyanate compound; and terminal isocyanate urethane prepolymers obtained by reacting polyol compounds with the aromatic polyhydric isocyanate compounds and the like. The "adduct body" is the aromatic polyvalent isocyanate compound, aliphatic polyvalent isocyanate compound or alicyclic polyvalent isocyanate compound and a low molecular weight active hydrogen-containing compound such as ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane or castor oil. It means a reactant, and examples thereof include xylylene diisocyanate adducts of trimethylolpropane and the like.

As an organic polyhydric isocyanate compound, more specifically, it is 2, 4- tolylene diisocyanate; 2,6-tolylene diisocyanate; 1,3-xylylene diisocyanate; 1,4-xylene diisocyanate; diphenylmethane-4,4'-diisocyanate; diphenylmethane-2,4'-diisocyanate; 3-methyldiphenylmethane diisocyanate; Hexamethylene diisocyanate; isophorone diisocyanate; Dicyclohexylmethane-4,4'-diisocyanate; Dicyclohexylmethane-2,4'-diisocyanate; Compounds in which any one or two or more of tolylene diisocyanate, hexamethylene diisocyanate, and xylylene diisocyanate are added to all or some hydroxyl groups of polyols such as trimethylolpropane; Lysine diisocyanate etc. are mentioned.

Examples of the organic polyvalent imine compound include N,N'-diphenylmethane-4,4'-bis(1-aziridinecarboxamide) and trimethylolpropane-tri-β-aziridinylpropionate. , tetramethylolmethane-tri-β-aziridinylpropionate, and N,N'-toluene-2,4-bis(1-aziridinecarboxamide)triethylenemelamine.

When using an organic polyhydric isocyanate compound as a crosslinking agent (F), it is preferable to use a hydroxyl group-containing polymer as a polymer component (A). When the crosslinking agent (F) has an isocyanate group and the polymer component (A) has a hydroxyl group, a crosslinked structure is easily introduced into the thermosetting resin film (20a-1) by a reaction between the crosslinking agent (F) and the polymer component (A). can do.

A crosslinking agent (F) may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more types of crosslinking agents (F), their combinations and ratios can be arbitrarily selected.

In the thermosetting resin composition (20a-1-1), the content of the crosslinking agent (F) in the case of using the crosslinking agent (F) is preferably from 0.01 to 20 with respect to 100 parts by mass of the content of the polymer component (A). Part by mass, more preferably 0.1 to 10 parts by mass, still more preferably 0.5 to 5 parts by mass. When the said content of a crosslinking agent (F) is more than the said lower limit, the effect by using a crosslinking agent (F) is acquired more notably. Moreover, excessive use of a crosslinking agent (F) is suppressed because the said content of a crosslinking agent (F) is below the said upper limit.

---Energy ray curable resin (G)---

The thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may contain the energy ray curable resin (G).

Since the thermosetting resin film 20a-1 contains the energy ray-curable resin (G), the characteristics can be changed by irradiation with energy rays.

The energy ray-curable resin (G) is obtained by polymerizing (curing) an energy ray-curable compound. Examples of the energy ray-curable compound include a compound having at least one polymerizable double bond in the molecule, and an acrylate-based compound having a (meth)acryloyl group is preferable.

Examples of the acrylate-based compound include trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, and pentaerythritol tetra(meth)acrylate. Rate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butylene glycoldi(meth)acrylate, 1,6-hexanedioldi(meth)acrylate ) Chain-like aliphatic skeleton-containing (meth)acrylates such as acrylates; Cyclic aliphatic skeleton-containing (meth)acrylates such as dicyclopentanyl di(meth)acrylate; polyalkylene glycol (meth)acrylates such as polyethylene glycol di(meth)acrylate; Oligoester (meth)acrylate; Urethane (meth)acrylate oligomer; Epoxy modified (meth)acrylate; Polyether (meth)acrylates other than the said polyalkylene glycol (meth)acrylate; Itaconic acid oligomer etc. are mentioned.

The weight average molecular weight of the energy ray-curable compound is preferably from 100 to 30,000, more preferably from 300 to 10,000.

The energy ray-curable compounds used for polymerization may be used singly or in combination of two or more. When two or more types of energy ray-curable compounds are used for polymerization, their combinations and ratios can be arbitrarily selected.

In the case of using the energy ray curable resin (G), the content of the energy ray curable resin (G) is preferably 1 to 95 mass based on the total amount of active ingredients of the thermosetting resin composition (20a-1-1) %, more preferably 5 to 90% by mass, still more preferably 10 to 85% by mass.

---Photoinitiator (H)---

When the heat-curable resin film (20a-1) and the heat-curable resin composition (20a-1-1) contain the energy-ray-curable resin (G), in order to efficiently advance the polymerization reaction of the energy-ray-curable resin (G) , The thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may contain the photoinitiator (H).

Examples of the photopolymerization initiator (H) include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, and benzoin benzoic acid. Methyl, benzoindimethylketal, 2,4-diethylthioxanthone, 1-hydroxycyclohexylphenylketone, benzyldiphenylsulfide, tetramethylthiurammonosulfide, azobisisobutyronitrile, benzyl, di Benzyl, diacetyl, 1,2-diphenylmethane, 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, and 2-chloroanthraquinone; and the like.

A photoinitiator (H) may be used individually by 1 type, and may be used in combination of 2 or more type. When there are 2 or more types of photopolymerization initiators (H), their combination and ratio can be arbitrarily selected.

In the thermosetting resin composition (20a-1-1), the content of the photoinitiator (H) is preferably from 0.1 to 20 parts by mass, more preferably from 0.1 to 20 parts by mass, relative to 100 parts by mass of the energy ray curable resin (G). It is preferably 1 to 10 parts by mass, more preferably 2 to 5 parts by mass.

---Universal Additive (I)---

The thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may contain a general purpose additive (I). The general-purpose additive (I) may be known, and may be arbitrarily selected according to the purpose, and is not particularly limited.

As a preferable general-purpose additive (I), a plasticizer, an antistatic agent, antioxidant, a coloring agent (dye, pigment), a gettering agent, etc. are mentioned, for example.

General purpose additive (I) may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more types of general-purpose additives (I), their combinations and ratios can be arbitrarily selected.

Content of general purpose additive (I) is not specifically limited, What is necessary is just to select suitably according to the purpose.

---menstruum---

It is preferable that the thermosetting resin composition (20a-1-1) further contains a solvent.

The heat-curable resin composition (20a-1-1) containing a solvent has good handleability.

The solvent is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol), and 1-butanol; esters such as ethyl acetate; Ketones, such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone; and the like.

A solvent may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more solvents, their combinations and ratios can be arbitrarily selected.

The solvent is preferably methyl ethyl ketone or the like from the viewpoint of being able to more uniformly mix the components contained in the thermosetting resin composition (20a-1-1).

---Preparation method of thermosetting resin composition (20a-1-1)---

The thermosetting resin composition (20a-1-1) is prepared by blending each component for constituting it.

The order of adding each component at the time of blending is not particularly limited, and two or more components may be added simultaneously. In the case of using a solvent, the solvent may be used by mixing the solvent with any compounding component other than the solvent and diluting the compounding component in advance, or the solvent may be used without diluting any compounding component other than the solvent in advance. You may use by mixing with a compounding component.

The method of mixing each component at the time of compounding is not specifically limited, The method of mixing by rotating a stirrer or a stirring blade etc.; How to mix using a mixer; What is necessary is just to select suitably from well-known methods, such as the method of adding and mixing ultrasonic waves.

The temperature and time at the time of addition and mixing of each component are not particularly limited as long as each blending component is not deteriorated, and may be appropriately adjusted, but the temperature is preferably 15 to 30°C.

--Energy ray curable resin film (20a-2)--

The energy ray-curable resin film 20a-2 contains an energy ray-curable component (a).

The energy ray-curable resin film 20a-2 is formed from, for example, an energy ray-curable resin composition 20a-2-1 containing an energy ray-curable component (a).

The energy ray-curable component (a) is preferably uncured, preferably has adhesive properties, and is more preferably uncured and has adhesive properties.

In addition, in the following description of this specification, "the content of each component based on the total amount of active ingredients of the energy ray curable resin composition (20a-2-1)" is "energy ray curable resin composition (20a-2) -1) It has the same meaning as the content of each component of the energy ray-curable resin film 20a-2 formed."

---Energy ray curable component (a)---

The energy ray-curable component (a) is a component that is cured by energy ray irradiation, and is also a component for imparting film-forming properties and flexibility to the energy ray-curable resin film 20a-2.

Examples of the energy ray curable component (a) include a polymer (a1) having an energy ray curable group and having a weight average molecular weight of 80,000 to 2,000,000, and a compound (a2) having an energy ray curable group and a molecular weight of 100 to 80,000. can be heard The polymer (a1) may or may not be crosslinked at least in part with a crosslinking agent.

・Polymer (a1)

As the polymer (a1) having an energy ray curable group and having a weight average molecular weight of 80,000 to 2,000,000, for example, an acrylic polymer (a11) having a functional group capable of reacting with a group of another compound, a group that reacts with the functional group, and an energy ray and an acrylic resin (a1-1) formed by polymerization of an energy ray-curable compound (a12) having an energy ray-curable group such as a curable double bond.

Examples of functional groups capable of reacting with groups of other compounds include hydroxyl groups, carboxy groups, amino groups, substituted amino groups (groups in which one or two hydrogen atoms of an amino group are substituted with groups other than hydrogen atoms), and epoxy groups. there is. However, in terms of preventing corrosion of circuits such as semiconductor wafers and semiconductor chips, the functional group is preferably a group other than a carboxy group. Among these, it is preferable that the said functional group is a hydroxyl group.

... acrylic polymer having a functional group (a11)

Examples of the acrylic polymer (a11) having a functional group include those formed by copolymerization of an acrylic monomer having a functional group and an acrylic monomer not having a functional group. In addition to these monomers, monomers other than the acrylic monomer (non-acrylic) monomer) may be copolymerized. In addition, the acrylic polymer (a11) may be a random copolymer or a block copolymer.

Examples of the acrylic monomer having a functional group include a hydroxyl group-containing monomer, a carboxy group-containing monomer, an amino group-containing monomer, a substituted amino group-containing monomer, and an epoxy group-containing monomer.

Examples of the hydroxyl group-containing monomer include hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, and (meth)acrylate. ) Hydroxyalkyl (meth)acrylates such as 2-hydroxybutyl acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate; and non-(meth)acrylic unsaturated alcohols (unsaturated alcohols having no (meth)acryloyl backbone) such as vinyl alcohol and allyl alcohol.

Examples of the carboxy group-containing monomer include ethylenically unsaturated monocarboxylic acids (monocarboxylic acids having ethylenically unsaturated bonds) such as (meth)acrylic acid and crotonic acid; ethylenically unsaturated dicarboxylic acids (dicarboxylic acids having ethylenically unsaturated bonds) such as fumaric acid, itaconic acid, maleic acid, and citraconic acid; anhydrides of the above ethylenically unsaturated dicarboxylic acids; (meth)acrylic acid carboxyalkyl esters such as 2-carboxyethyl methacrylate; and the like.

A hydroxyl group-containing monomer or a carboxyl group-containing monomer is preferable, and, as for the acrylic monomer which has a functional group, a hydroxyl group-containing monomer is more preferable.

Acrylic monomers having a functional group constituting the acrylic polymer (a11) may be used alone or in combination of two or more. When there are two or more types of acrylic monomers having functional groups constituting the acrylic polymer (a11), their combination and ratio can be arbitrarily selected.

Examples of the acrylic monomer having no functional group include methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, and (meth)acrylate. ) isobutyl acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, (meth)acrylate ) Isooctyl acrylate, (meth) acrylate n-octyl, (meth) acrylate n-nonyl, (meth) isononyl acrylate, (meth) decyl acrylate, (meth) undecyl acrylate, dodecyl (meth) acrylate (( lauryl (meth)acrylate), tridecyl (meth)acrylate, tetradecyl (meth)acrylate (myristyl (meth)acrylate), pentadecyl (meth)acrylate, hexadecyl (meth)acrylate (palmityl (meth)acrylate) , (meth)acrylic acid alkyl esters in which the alkyl group constituting the alkyl ester has a chain structure of 1 to 18 carbon atoms, such as heptadecyl (meth)acrylate and octadecyl (meth)acrylate (stearyl (meth)acrylate) etc. can be mentioned.

Examples of the acrylic monomer having no functional group include alkoxyalkyl groups such as methoxymethyl (meth)acrylate, methoxyethyl (meth)acrylate, ethoxymethyl (meth)acrylate, and ethoxyethyl (meth)acrylate. Contained (meth)acrylic acid ester; (meth)acrylic acid esters having an aromatic group including (meth)acrylic acid aryl esters such as phenyl (meth)acrylate; non-crosslinkable (meth)acrylamide and its derivatives; (meth)acrylic acid esters having non-crosslinkable tertiary amino groups, such as N,N-dimethylaminoethyl (meth)acrylate and N,N-dimethylaminopropyl (meth)acrylate; and the like.

The acrylic monomers that constitute the acrylic polymer (a11) and do not have a functional group may be used alone or in combination of two or more. When there are two or more types of acrylic monomers not having a functional group constituting the acrylic polymer (a11), their combination and ratio can be arbitrarily selected.

Examples of the non-acrylic monomer include olefins such as ethylene and norbornene; vinyl acetate; Styrene etc. are mentioned.

The non-acrylic monomers constituting the acrylic polymer (a11) may be used alone or in combination of two or more. When there are two or more types of non-acrylic monomers constituting the acrylic polymer (a11), their combination and ratio can be arbitrarily selected.

In the acrylic polymer (a11), the ratio (content) of the amount of the structural units derived from the acrylic monomer having a functional group to the total mass of the structural units constituting the acrylic polymer is preferably 0.1 to 50% by mass, more preferably is 1 to 40% by mass, more preferably 3 to 30% by mass. When the ratio is in such a range, the content of the energy ray curable group in the acrylic resin (a1-1) obtained by copolymerization of the acrylic polymer (a11) and the energy ray curable compound (a12) is It becomes possible to easily adjust the degree of hardening to a desirable range.

The acrylic polymer (a11) constituting the acrylic resin (a1-1) may be used alone or in combination of two or more. When there are two or more acrylic polymers (a11) constituting the acrylic resin (a1-1), their combinations and ratios can be arbitrarily selected.

The content of the acrylic resin (a1-1) is preferably 1 to 60% by mass, more preferably 3 to 50% by mass, based on the total amount of active ingredients of the energy ray curable resin composition (20a-2-1) , More preferably, it is 5-40 mass %.

...energy ray curable compound (a12)

The energy ray-curable compound (a12) preferably has one or two or more groups selected from the group consisting of an isocyanate group, an epoxy group, and a carboxy group as a group capable of reacting with the functional group of the acrylic polymer (a11), and the group It is more preferable to have an isocyanate group as .

For example, when the energy ray-curable compound (a12) has an isocyanate group as the group, the isocyanate group readily reacts with the hydroxyl group of the acrylic polymer (a11) having a hydroxyl group as the functional group.

The energy ray-curable compound (a12) preferably has 1 to 5 energy ray-curable groups in one molecule, and more preferably has 1 to 2 energy ray-curable groups.

Examples of the energy ray-curable compound (a12) include 2-methacryloyloxyethyl isocyanate, meta-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, and 1,1- (bisacryloyloxymethyl) ethyl isocyanate; Acryloyl monoisocyanate compound obtained by reaction of a diisocyanate compound or a polyisocyanate compound, and hydroxyethyl (meth)acrylate; The acryloyl monoisocyanate compound etc. which are obtained by reaction of a diisocyanate compound or a polyisocyanate compound, a polyol compound, and hydroxyethyl (meth)acrylate are mentioned. Among these, it is preferable that the energy ray-curable compound (a12) is 2-methacryloyloxyethyl isocyanate.

The energy ray-curable compound (a12) constituting the acrylic resin (a1-1) may be used alone or in combination of two or more. When there are two or more types of energy ray-curable compounds (a12) constituting the acrylic resin (a1-1), their combination and ratio can be arbitrarily selected.

In the acrylic resin (a1-1), the ratio of the content of the energy ray curable group derived from the energy ray curable compound (a12) to the content of the functional group derived from the acrylic polymer (a11) is preferably from 20 to 120 mol%, more preferably 35 to 100 mol%, still more preferably 50 to 100 mol%. When the ratio of the content is within such a range, the adhesive strength of the protective layer 40 after curing becomes larger. Therefore, film peeling of the protective layer 40 as a protective layer can be more easily suppressed. In addition, when the energy ray-curable compound (a12) is a monofunctional (having one of the above groups in one molecule) compound, the upper limit of the ratio of the above content is 100 mol%, but the energy ray-curable compound (a12) is In the case of a functional compound (having two or more of the above groups in one molecule), the upper limit of the ratio of the above content may exceed 100 mol%.

The weight average molecular weight (Mw) of the polymer (a1) is preferably 100,000 to 2,000,000, more preferably 300,000 to 1,500,000.

When the polymer (a1) is at least partly crosslinked by a crosslinking agent, the polymer (a1) does not correspond to any of the above-mentioned monomers described as constituting the acrylic polymer (a11), and the crosslinking agent A monomer having a group that reacts with may be polymerized and crosslinked in the group that reacts with the crosslinking agent, or it may be crosslinked in the group that reacts with the functional group derived from the energy ray-curable compound (a12).

Polymer (a1) may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more polymers (a1), their combinations and ratios can be arbitrarily selected.

・Compound (a2)

Examples of the energy-beam-curable group of the compound (a2) having an energy-beam-curable group and a weight average molecular weight of 100 to 80,000 include a group containing an energy-beam-curable double bond, preferably a (meth)acryloyl group; Or a vinyl group etc. are mentioned.

The compound (a2) is not particularly limited as long as it satisfies the above conditions, and examples thereof include low molecular weight compounds having an energy ray curable group, epoxy resins having an energy ray curable group, and phenol resins having an energy ray curable group.

Examples of the low molecular weight compound having an energy ray curable group among the compounds (a2) include polyfunctional monomers or oligomers, and acrylate-based compounds having a (meth)acryloyl group are preferable. Examples of the acrylate compound include 2-hydroxy-3-(meth)acryloyloxypropyl methacrylate, polyethylene glycol di(meth)acrylate, and propoxylated ethoxylated bisphenol A di(meth) Acrylate, 2,2-bis[4-((meth)acryloxypolyethoxy)phenyl]propane, ethoxylated bisphenol A di(meth)acrylate, 2,2-bis[4-((meth)acryloxy Diethoxy)phenyl]propane, 9,9-bis[4-(2-(meth)acryloyloxyethoxy)phenyl]fluorene, 2,2-bis[4-((meth)acryloxypolypropoxy ) Phenyl] propane, tricyclodecane dimethanol di(meth)acrylate, 1,10-decanedioldi(meth)acrylate, 1,6-hexanedioldi(meth)acrylate, 1,9-nonanedioldi (meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, polytetramethylene glycol di(meth)acrylate, ethylene glycol di (meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, 2,2-bis[4-((meth)acryloxyethoxy)phenyl]propane, neopentyl glycol bifunctional (meth)acrylates such as di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, and 2-hydroxy-1,3-di(meth)acryloxypropane; Tris(2-(meth)acryloxyethyl)isocyanurate, ε-caprolactone modified tris-(2-(meth)acryloxyethyl)isocyanurate, ethoxylated glycerin tri(meth)acrylate, pentaeryth Litol tri(meth)acrylate, trimethylolpropane tri(meth)acrylate, ditrimethylolpropanetetra(meth)acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, pentaerythritol tetra(meth)acrylate polyfunctional (meth)acrylates such as dipentaerythritol poly(meth)acrylate and dipentaerythritol hexa(meth)acrylate; Polyfunctional (meth)acrylate oligomers, such as a urethane (meth)acrylate oligomer; etc. can be mentioned.

Among the compounds (a2), as the epoxy resin having an energy ray curable group and the phenol resin having an energy ray curable group, those described in Paragraph 0043 of "Japanese Patent Laid-Open No. 2013-194102" and the like can be used, for example.

The compound (a2) has a weight average molecular weight of preferably 100 to 30,000, more preferably 300 to 10,000.

A compound (a2) may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more compounds (a2), their combinations and ratios can be arbitrarily selected.

---Polymer having no energy ray curable group (b)---

When the energy ray curable resin composition (20a-2-1) and the energy ray curable resin film (20a-2) contain the compound (a2) as the energy ray curable component (a), they do not further have an energy ray curable group. It is preferable to also contain a polymer (b).

The polymer (b) having no energy ray curable group may or may not be crosslinked at least in part with a crosslinking agent.

Examples of the polymer (b) having no energy ray curable group include acrylic polymers, phenoxy resins, urethane resins, polyesters, rubber-based resins, and acrylic urethane resins. Among these, it is preferable that the said polymer (b) is an acrylic polymer (it may abbreviate as "acrylic polymer (b-1)" hereafter).

The acrylic polymer (b-1) may be a known one, and may be, for example, a homopolymer of one type of acrylic monomer or a copolymer of two or more types of acrylic monomers. Moreover, the acrylic polymer (b-1) may be a copolymer of one or two or more types of acrylic monomers and one or two or more types of monomers other than the acrylic monomers (non-acrylic monomers).

Examples of the acrylic monomer constituting the acrylic polymer (b-1) include (meth)acrylic acid alkyl esters, (meth)acrylic acid esters having a cyclic skeleton, (meth)acrylic acid esters containing glycidyl groups, and hydroxyl group-containing (meth)acrylic acid esters, and (meth)acrylic acid esters containing a substituted amino group.

Examples of the (meth)acrylic acid alkyl ester include methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, and (meth)acrylate. ) isobutyl acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, (meth)acrylate ) Isooctyl acrylate, (meth) acrylate n-octyl, (meth) acrylate n-nonyl, (meth) isononyl acrylate, (meth) decyl acrylate, (meth) undecyl acrylate, dodecyl (meth) acrylate (( lauryl (meth)acrylate), tridecyl (meth)acrylate, tetradecyl (meth)acrylate (myristyl (meth)acrylate), pentadecyl (meth)acrylate, hexadecyl (meth)acrylate (palmityl (meth)acrylate) , (meth)acrylic acid alkyl esters in which the alkyl groups constituting the alkyl esters such as heptadecyl (meth)acrylate and octadecyl (meth)acrylate (stearyl (meth)acrylate) have a chain structure of 1 to 18 carbon atoms, etc. can be heard

Examples of (meth)acrylic acid esters having a cyclic skeleton include (meth)acrylic acid cycloalkyl esters such as isobornyl (meth)acrylate and dicyclopentanyl (meth)acrylate; (meth)acrylic acid aralkyl esters such as benzyl (meth)acrylate; (meth)acrylic acid cycloalkenyl esters such as (meth)acrylic acid dicyclopentenyl ester; (meth)acrylic acid cycloalkenyloxyalkyl esters such as dicyclopentenyloxyethyl (meth)acrylate; etc. can be mentioned.

As a glycidyl group-containing (meth)acrylic acid ester, glycidyl (meth)acrylate etc. are mentioned, for example.

Examples of the hydroxyl group-containing (meth)acrylic acid ester include hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, and 3-hydroxy (meth)acrylate. hydroxypropyl, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate; and the like.

Examples of the substituted amino group-containing (meth)acrylic acid ester include N-methylaminoethyl (meth)acrylic acid.

Examples of the non-acrylic monomer constituting the acrylic polymer (b-1) include olefins such as ethylene and norbornene; vinyl acetate; styrene; etc. can be mentioned.

Examples of the polymer (b) having no energy ray curable group, at least partially crosslinked by a crosslinking agent, include those in which the reactive functional groups in the polymer (b) reacted with the crosslinking agent.

The reactive functional group may be appropriately selected depending on the type of crosslinking agent and the like, and is not particularly limited. For example, when the crosslinking agent is a polyisocyanate compound, examples of the reactive functional group include a hydroxyl group, a carboxy group, and an amino group, and among these, a hydroxyl group highly reactive with an isocyanate group is preferable.

Moreover, when a crosslinking agent is an epoxy-type compound, a carboxy group, an amino group, an amide group, etc. are mentioned as said reactive functional group, Among these, a carboxy group highly reactive with an epoxy group is preferable.

However, in terms of preventing corrosion of circuits of semiconductor wafers or semiconductor chips, the reactive functional group is preferably a group other than a carboxy group.

Examples of the polymer (b) having a reactive functional group and not having an energy ray curable group include those obtained by polymerizing a monomer having at least a reactive functional group. In the case of the acrylic polymer (b-1), one or both of the acryl-based monomer and the non-acrylic-based monomer exemplified as the monomer constituting this may be used as any one having a reactive functional group. For example, as a polymer (b) which has a hydroxyl group as a reactive functional group, what was obtained by polymerizing (meth)acrylic acid ester containing a hydroxyl group is mentioned, for example, In addition to this, in the said acrylic monomer or non-acrylic monomer exemplified previously , those obtained by polymerizing a monomer in which one or two or more hydrogen atoms are substituted with the above-mentioned reactive functional groups.

In the polymer (b) having a reactive functional group, the ratio (content) of the amount of the structural unit derived from the monomer having a reactive functional group to the total mass of the structural units constituting the polymer is preferably 1 to 20% by mass, More preferably, it is 2-10 mass %. When the ratio is in such a range, the degree of crosslinking in the polymer (b) becomes a more preferable range.

The weight average molecular weight (Mw) of the polymer (b) not having an energy ray curable group is preferably 10,000 to 2,000,000, more preferably 10,000 to 2,000,000, from the viewpoint of better film formation of the energy ray curable resin composition (20a-2-1) It is 100,000 to 1,500,000.

The polymer (b) having no energy ray curable group may be used singly or in combination of two or more. When there are two or more types of polymers (b) having no energy ray curable group, their combinations and ratios can be arbitrarily selected.

Examples of the energy ray-curable resin composition (20a-2-1) include those containing any one or both of a polymer (a1) and a compound (a2).

And, when the energy ray-curable resin composition (20a-2-1) contains the compound (a2), it is preferable to further contain a polymer (b) having no energy ray-curable group. In this case, the polymer ( It is also preferable to contain a1).

In addition, the energy ray curable resin composition (20a-2-1) may contain both the polymer (a1) and the polymer (b) without an energy ray curable group without containing the compound (a2).

When the energy ray-curable resin composition (20a-2-1) contains the polymer (a1), the compound (a2), and the polymer (b) without an energy ray-curable group, the content of the compound (a2) is the polymer ( It is preferably 10 to 400 parts by mass, more preferably 30 to 350 parts by mass, based on 100 parts by mass of the total content of a1) and the polymer (b) not having an energy ray curable group.

The total content of the energy ray curable component (a) and the polymer (b) having no energy ray curable group is preferably 5 to 90 based on the total amount of active ingredients of the energy ray curable resin composition (20a-2-1). It is mass %, More preferably, it is 10-80 mass %, More preferably, it is 20-70 mass %. When the content of the energy ray curable component is within such a range, the energy ray curable property of the energy ray curable resin film 20a-2 becomes better.

The energy ray-curable resin composition (20a-2-1), in addition to the energy ray-curable component, depending on the purpose, one type selected from the group consisting of a heat-curable component, a photopolymerization initiator, a filler, a coupling agent, a crosslinking agent, and a general-purpose additive, or You may contain 2 or more types.

For example, the energy-beam-curable resin film 20a-2 formed by using the energy-beam-curable resin composition 20a-2-1 containing an energy-beam curable component and a heat-curable component is heated to an adherend. The adhesion to the film is improved, and the strength of the protective layer 40 formed of this energy ray-curable resin film 20a-2 is also improved.

As the heat-curable component, photopolymerization initiator, filler, coupling agent, crosslinking agent, and general-purpose additive in the energy ray-curable resin composition (20a-2-1), respectively, to the heat-curable resin composition (20a-1-1) The same thing as the thermosetting component (B), photoinitiator (H), filler (D), coupling agent (E), crosslinking agent (F), and general-purpose additive (I) in is mentioned.

In the energy ray curable resin composition (20a-2-1), the heat curable component, the photopolymerization initiator, the filler, the coupling agent, the crosslinking agent, and the general-purpose additive may each be used alone or in combination of two or more. You may use it. When using two or more types in combination, their combination and ratio can be arbitrarily selected.

The contents of the heat curable component, photopolymerization initiator, filler, coupling agent, crosslinking agent, and general purpose additive in the energy ray curable resin composition (20a-2-1) may be appropriately adjusted according to the purpose, and are not particularly limited.

Since the handleability of the energy ray-curable resin composition (20a-2-1) is improved by dilution, it is preferable to further contain a solvent.

Examples of the solvent contained in the energy ray-curable resin composition (20a-2-1) include the same ones as the solvent in the heat-curable resin composition (20a-1-1).

The solvent contained in the energy ray-curable resin composition (20a-2-1) may be used alone or in combination of two or more. When using two or more types in combination, their combination and ratio can be arbitrarily selected.

---Other Ingredients---

The energy ray-curable resin composition (20a-2-1), in addition to the energy ray-curable component described above, components other than the curable component, that is, a curing accelerator ( C) etc. can be contained in an appropriate amount.

---Production method of energy ray-curable resin composition (20a-2-1)---

The energy ray-curable resin composition (20a-2-1) is obtained by blending each component for constituting it. The order of adding each component at the time of blending is not particularly limited, and two or more components may be added simultaneously.

In the case of using a solvent, the solvent may be used by mixing the solvent with any compounding component other than the solvent and diluting the compounding component in advance, or the solvent may be used without diluting any compounding component other than the solvent in advance. You may use it by mixing with a compounding component. The method of mixing each component at the time of compounding is not specifically limited, The method of mixing by rotating a stirrer or a stirring blade etc.; How to mix using a mixer; What is necessary is just to select suitably from well-known methods, such as the method of mixing by applying ultrasonic waves.

The temperature and time at the time of addition and mixing of each component are not particularly limited as long as each blending component is not deteriorated, and may be appropriately adjusted, but the temperature is preferably 15 to 30°C.

-Support Sheet (30a)-

The support sheet 30a functions as a support for supporting the curable resin 20a.

The support sheet 30a may be composed of only the support substrate 31, or may be a laminate of the support substrate 31 and the pressure-sensitive adhesive layer 33, or may include the support substrate 31, the buffer layer 32 (intermediate layer), and the pressure-sensitive adhesive. A laminated body in which the layers 33 are laminated in this order may be used. A laminate in which the supporting substrate 31, the buffer layer 32 (intermediate layer), and the pressure-sensitive adhesive layer 33 are laminated in this order is suitable for use as a back grind sheet.

Hereinafter, the support base material 31 included in the support sheet 30a, the pressure-sensitive adhesive layer 33 that the support sheet 30a may have, and the buffer layer 32 (intermediate layer) will be described.

--Supporting Materials--

The supporting base material is a sheet-like or film-like thing, and examples of its constituent materials include the following various resins.

Examples of the resin constituting the supporting substrate include polyethylene such as low density polyethylene (LDPE), linear low density polyethylene (LLDPE), and high density polyethylene (HDPE); polyolefins other than polyethylene, such as polypropylene, polybutene, polybutadiene, polymethylpentene, and norbornene resin; Ethylene-based copolymers such as ethylene-vinyl acetate copolymers, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylic acid ester copolymers, and ethylene-norbornene copolymers (copolymers obtained by using ethylene as a monomer) ; vinyl chloride-based resins such as polyvinyl chloride and vinyl chloride copolymers (resin obtained by using vinyl chloride as a monomer); polystyrene; polycycloolefin; polyesters such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate, polyethylene-2,6-naphthalenedicarboxylate, and fully aromatic polyesters in which all constituent units have aromatic cyclic groups; copolymers of two or more of the above polyesters; Poly(meth)acrylic acid ester; Polyurethane; Polyurethane acrylate; polyimide; polyamide; polycarbonate; fluorine resin; polyacetal; modified polyphenylene oxide; polyphenylene sulfide; polysulfone; Polyether ketone etc. are mentioned.

Moreover, as a resin which comprises a support base material, polymer alloys, such as a mixture of the said polyester and other resins, are also mentioned, for example. In the polymer alloy of the polyester and other resins, it is preferable that the amount of the resin other than polyester is relatively small.

Moreover, as resin which comprises a supporting base material, it is crosslinked resin by which 1 type(s) or 2 or more types were crosslinked among the said resins illustrated so far, for example; Modified resins, such as ionomers, using one or two or more of the above resins exemplified so far are also exemplified.

Resin constituting the supporting substrate may be used singly or in combination of two or more. When there are two or more resins constituting the supporting base material, their combination and ratio can be arbitrarily selected.

The supporting base material may consist of only one layer (single layer) or a plurality of layers of two or more layers. When the supporting base material is a plurality of layers, these plurality of layers may be the same as or different from each other, and the combination of these plurality of layers is not particularly limited.

The thickness of the supporting substrate is preferably 5 to 1,000 μm, more preferably 10 to 500 μm, even more preferably 15 to 300 μm, and still more preferably 20 to 150 μm.

Here, "thickness of the supporting base material" means the thickness of the entire supporting base material, and, for example, the thickness of a supporting base material composed of a plurality of layers means the total thickness of all the layers constituting the supporting base material.

It is preferable that the supporting base material has a high thickness accuracy, that is, one in which variation in thickness is suppressed regardless of the site. Among the constituent materials described above, examples of materials with high accuracy in thickness that can be used to construct such a supporting base material include polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, ethylene-vinyl acetate copolymer, and the like. can be heard

The supporting base material may contain known various additives such as a filler, a colorant, an antistatic agent, an antioxidant, an organic lubricant, a catalyst, and a softener (plasticizer) in addition to the main constituent materials such as the above resin.

The supporting substrate may be transparent or opaque, and may be colored depending on the purpose, or may have other layers deposited thereon. In addition, when the curable resin film (x) is the energy ray-curable resin film (20a-2) and the pressure-sensitive adhesive layer is an energy-curable pressure-sensitive adhesive layer, it is preferable that the supporting base material transmits energy rays.

The supporting base material can be manufactured by a known method. For example, a support base material containing resin can be manufactured by molding a resin composition containing the resin.

--Adhesive layer--

The pressure-sensitive adhesive layer is in the form of a sheet or film and contains an adhesive.

Examples of the adhesive include acrylic resin (adhesive made of a resin having a (meth)acryloyl group), urethane resin (adhesive made of a resin having a urethane bond), rubber-based resin (adhesive made of a resin having a rubber structure) , silicone-based resin (adhesive made of a resin having a siloxane bond), epoxy-based resin (adhesive made of a resin having an epoxy group), polyvinyl ether, and adhesive resins such as polycarbonate. Among these, acrylic resin is preferable.

In the present invention, "adhesive resin" is a concept including both a resin having adhesiveness and a resin having adhesiveness, and for example, not only the resin itself has adhesiveness, but also other Resins exhibiting adhesiveness by combination with components, resins exhibiting adhesiveness by the presence of triggers such as heat or water, and the like are also included.

The pressure-sensitive adhesive layer may consist of only one layer (single layer) or a plurality of layers of two or more layers. When the pressure-sensitive adhesive layer is a plurality of layers, these plurality of layers may be the same as or different from each other, and the combination of these plurality of layers is not particularly limited.

The thickness of the pressure-sensitive adhesive layer is preferably 1 to 1000 μm, more preferably 5 to 500 μm, still more preferably 10 to 100 μm. Here, the "thickness of the adhesive layer" means the thickness of the entire pressure-sensitive adhesive layer, and for example, the thickness of the pressure-sensitive adhesive layer composed of a plurality of layers means the total thickness of all the layers constituting the pressure-sensitive adhesive layer.

The pressure-sensitive adhesive layer may be formed using an energy ray-curable pressure-sensitive adhesive or may be formed using a non-energy ray-curable pressure-sensitive adhesive. A pressure-sensitive adhesive layer formed using an energy ray-curable pressure-sensitive adhesive can easily adjust physical properties before and after hardening.

--Buffer Layer (Intermediate Layer)--

The buffer layer (intermediate layer) is in the form of a sheet or film, and the constituent material thereof may be appropriately selected according to the purpose, and is not particularly limited. For example, when the purpose is to suppress the protective layer from being deformed by reflecting the shape of bumps present on the semiconductor surface in the protective layer covering the semiconductor surface, preferable constituent materials of the buffer layer (intermediate layer) include: Urethane (meth)acrylate etc. are mentioned from the point which the uneven|corrugation followability is high and the adhesive property of a buffer layer (intermediate layer) improves more.

The buffer layer (intermediate layer) may consist of only one layer (single layer) or a plurality of layers of two or more layers. When the buffer layer (intermediate layer) is a plurality of layers, these plurality of layers may be the same as or different from each other, and the combination of these plurality of layers is not particularly limited.

The thickness of the buffer layer (intermediate layer) can be appropriately adjusted according to the height of the bumps on the surface of the semiconductor to be protected, but it is preferably 50 to 600 μm in that it can easily absorb the influence of relatively high bumps. More preferably, it is 70-500 micrometers, More preferably, it is 80-400 micrometers. Here, the "thickness of the buffer layer (intermediate layer)" means the thickness of the entire buffer layer (intermediate layer). means the thickness of

Next, the manufacturing method of the laminated body 30 for forming a protective layer is demonstrated.

((Method of manufacturing laminate 30 for forming protective layer))

The layered product 30 for forming a protective layer can be manufactured by sequentially laminating each of the above layers so as to have a corresponding positional relationship.

For example, when manufacturing the support sheet 30a and laminating the pressure-sensitive adhesive layer 33 or the buffer layer 32 (intermediate layer) on the support substrate 31, the pressure-sensitive adhesive composition or The pressure-sensitive adhesive layer 33 or the buffer layer 32 (intermediate layer) can be laminated by applying a composition for forming the buffer layer 32 (intermediate layer), drying as necessary, or irradiating energy rays.

Examples of the coating method include spin coating method, spray coating method, bar coating method, knife coating method, roll coating method, roll knife coating method, blade coating method, die coating method, gravure coating method and the like. .

On the other hand, for example, when laminating the curable resin film (x) further on the pressure-sensitive adhesive layer 33 laminated on the supporting base material 31, on the pressure-sensitive adhesive layer 33, the thermosetting resin composition ( 20a-1-1) or the energy ray-curable resin composition (20a-2-1) may be applied to directly form the curable resin 20a.

Similarly, when the pressure-sensitive adhesive layer 33 is further laminated on the buffer layer 32 (intermediate layer) laminated on the supporting base material 31, the pressure-sensitive adhesive composition is coated on the buffer layer 32 (intermediate layer), , it is possible to form the pressure-sensitive adhesive layer 33 directly.

In this way, when a continuous two-layer laminated structure is formed using a certain composition, a new layer can be formed by further coating the composition on the layer formed of the composition. However, the layer to be laminated later among these two layers is previously formed on another release film using the above composition, and the exposed surface on the opposite side to the side in contact with the release film of this formed layer has already been formed. It is preferable to form a continuous two-layer laminated structure by bonding to the exposed surface of the remaining layer. At this time, it is preferable to apply the said composition to the peeling treatment surface of a peeling film. What is necessary is just to remove a peeling film after formation of a laminated structure as needed.

<<Process (E1)>>

In step (E1), the semiconductor chips are individually placed on the covering sheet so that at least one of the bumps and bump formation surfaces is covered with the covering sheet.

Details are as described in the first embodiment.

<<Process (A)>>

Step (A) is a step of forming a shield layer on a semiconductor chip in which the bump formation surface of a semiconductor wafer with bumps is protected with a protective layer made of a cured product of a curable resin, wherein at least one of the bumps and the bump formation surface is for coating In the state where the sheet is covered, a shield layer is formed on at least a part of the exposed portion of the semiconductor chip covering sheet.

Details are as described in the first embodiment.

<<Process (B)>>

In step (B), after forming the shielding layer on the semiconductor chip, the coating sheet is peeled from at least one of the bump and the semiconductor wafer.

Details are as described in the first embodiment.

In the fourth embodiment, since the shield layer is formed on the semiconductor chip in which the bump formation surface of the semiconductor wafer is covered with a protective layer, the conductive material for forming the shield layer is returned to the bump formation surface side of the semiconductor wafer, and the semiconductor chip Even if it penetrates between the wafer and the coating sheet, it is possible to sufficiently suppress the formation of the conductive material on the bump formation surface.

Further, in the fourth embodiment, since the bump formation surface of the semiconductor wafer is covered with a protective layer, the amount of bump embedding in the covering sheet can be reduced, and furthermore, the covering sheet can be easily separated from the bumped wafer. , it is possible to suppress the generation of glue remaining at the time of peeling.

As a modification of the fourth embodiment, for example,

(i) Reattaching the back grind tape (Step (C4) → Step (C5) → Step (C-Y) → Step (C7) → Step (C-X) → Step (C5) → Step (C6) → Step (C-Y) → Step (8) → Step (E1) → Step (A) → Step (B));

(ii) Another form of attaching the back grind tape again (Step (C4) → Step (C5) → Step (C-Y) → Step (C7) → Step (C5) → Step (C6) → Step (C-Y) → Step (C-X) ) → Process (8) → Process (E1) → Process (A) → Process (B)) ;

(iii) Form of curing collectively (step (C4) → step (C5) → step (C6) → first half of step (8) (placement on dicing tape) → step (C-Y) → step (C7) → process (C-X) → second half of process (8) (individualization) → process (E1) → process (A) → process (B)); etc. can be mentioned.

<Fifth Embodiment>

Fig. 14 shows a schematic diagram according to the fifth embodiment.

In the fifth embodiment, as shown in Fig. 14, step (C') (step (C4), step (C5), step (C6), step (C-Y), step (C7), step (C-X), step (C8)), step (E2), step (F), step (A), and step (B) are performed in this order.

5th Embodiment differs from 4th Embodiment in the point which process (E2) and process (F) are performed instead of process (E1) mentioned above.

Hereinafter, differences from the fourth embodiment (step (E2) and step (F)) are described in detail.

<<Process (E2)>>

In step (E2), the semiconductor chips are collectively placed on the covering sheet so that at least one of the bumps and bump formation surfaces is covered with the covering sheet.

Step (E2) can be performed in the same manner as step (E1), except that the semiconductor chips are collectively placed instead of individually placed.

<<Process (F)>>

In step (F), the covering sheet on which the semiconductor chip is mounted is expanded. Here, the covering sheet may be extended in the arrangement direction of the semiconductor chips, or the covering sheet may be radially extended.

In this way, by extending the covering sheet on which the semiconductor chips are mounted in the arrangement direction of the semiconductor chips, even when the distance between semiconductor chips is narrow, it can be widened to a desired distance.

In addition, expansion of the covering sheet can be performed using, for example, an expander or the like.

Instead of performing the steps (E2) and (F), or in addition to performing the steps (E2) and (F), the following steps (G) to (I) may be performed. Here, in the following step (H), the expansion tape may be expanded in the arrangement direction of the semiconductor chips, or the expansion tape may be expanded radially.

Step (G): Step of placing the semiconductor chip on the expansion tape

Process (H): Process of expanding the expansion tape on which the semiconductor chip is placed

Step (I): Step of transferring the semiconductor chip placed on the expanded tape to the covering sheet

In the fifth embodiment, since the shield layer is formed on the semiconductor chip in which the bump formation surface of the semiconductor wafer is covered with the protective layer, the conductive material for forming the shield layer is returned to the bump formation surface side of the semiconductor wafer, and the semiconductor chip Even if it penetrates between the wafer and the coating sheet, it is possible to sufficiently suppress the formation of the conductive material on the bump formation surface.

Further, in the fifth embodiment, since the bump formation surface of the semiconductor wafer is covered with the protective layer, the amount of bump embedding in the covering sheet can be reduced, and furthermore, the covering sheet can be easily separated from the wafer with bumps. , it is possible to suppress the generation of glue remaining at the time of peeling.

<Sixth Embodiment>

Fig. 15 shows a schematic diagram according to the sixth embodiment.

In the sixth embodiment, as shown in Fig. 15, step (C') (step (C4), step (C5), step (C6), step (C-Y), step (C7), step (C-X), step (C8)), step (F), step (A), and step (B) are performed in this order.

6th Embodiment differs from 5th Embodiment in that the process (E2) mentioned above is not performed and the process (C8) in process (C') is different.

Hereinafter, the difference from 5th Embodiment (process (C8)) is explained in full detail.

(Process (C8))

In step (C8), the wafer with bumps on which the protective layer is formed is cut from the side opposite to the bump formation surface and separated into individual pieces to obtain a semiconductor chip whose bump formation surface is protected by the protective layer.

Cutting can be appropriately performed by employing a conventionally known method such as blade dicing or laser dicing.

In the step (C8) of the sixth embodiment, instead of cutting the wafer with bumps with a protective layer from the bump formation surface side and separating it into pieces, the wafer with bumps with a protective layer is cut on the side opposite to the bump formation surface. It can be carried out in the same manner as the step (C8) of the fifth embodiment (that is, the step (C8) of the fourth embodiment) except that the process is cut into pieces.

A step of transferring a semiconductor chip by placing a wafer with bumps with a protective layer on a coating sheet, then cutting the wafer with bumps with a protective layer from the side opposite to the bump formation surface and separating it into pieces (E2)) can be omitted.

In the sixth embodiment, since the shield layer is formed on the semiconductor chip in which the bump formation surface of the semiconductor wafer is covered with the protective layer, the conductive material for forming the shield layer is returned to the bump formation surface side of the semiconductor wafer, and the semiconductor chip Even if it penetrates between the wafer and the coating sheet, it is possible to sufficiently suppress the formation of the conductive material on the bump formation surface.

Further, in the sixth embodiment, since the bump formation surface of the semiconductor wafer is covered with a protective layer, the amount of bump embedding in the covering sheet can be reduced, and furthermore, the covering sheet can be easily separated from the bumped wafer. , it is possible to suppress the generation of glue remaining at the time of peeling.

According to the method for manufacturing a semiconductor device of the present invention, a shield layer is formed on a semiconductor chip in which a bump formation surface of a semiconductor wafer is covered with a resin layer (ie, a protective layer) made of a cured product of a curable resin. Even if the conductive material for forming the semiconductor wafer is returned to the bump formation surface side, the formation of the conductive material on the bump formation surface can be sufficiently suppressed.

Further, according to the method for manufacturing a semiconductor device of the present invention, since the bump formation surface of the semiconductor wafer is covered with a resin layer made of a cured product of a curable resin (i.e., protective layer), the amount of bump embedding in the covering sheet can be reduced. Furthermore, it is possible to suppress the occurrence of glue remaining when the coating sheet is peeled off from the bumped wafer.

Example

Hereinafter, the present invention will be described in more detail with reference to specific examples. However, this invention is not limited at all to the Example shown below.

(Example 1)

As in the first embodiment, step (C1-1), step (C1-2), step (C1-3), step (C2), step (C-X), step (C3), step (E1), step (A) and step (B) were performed in this order.

In addition, in order to confirm the existence of the conductive material on the bump formation surface, the bump formation surface was observed with an optical microscope (manufactured by KEYENCE, model name: VHX-1000). As a result, the conductive material was not present on the bump formation surface of the semiconductor chip and on the bumps.

First, as a step (C1-1), a laminate for forming a protective layer having a laminated structure in which a support sheet and a curable resin layer are laminated on the bump formation surface of a wafer for semiconductor chip production is made with the curable resin layer as the sticking surface, attached. Hereinafter, it describes in detail.

<Preparation of composition for forming curable resin layer>

9.9% by mass of the following polymer component (A), 37.9% by mass of an epoxy resin (B1), 24.7% by mass of an epoxy resin (B2), 18.3% by mass of a thermal curing agent (B3), 0.2% by mass of a curing accelerator (C), and a filler (D ) 9.0% by mass was dissolved or dispersed in methyl ethyl ketone, and a composition for forming a curable resin layer having a solid content concentration of 55% by mass was obtained by stirring at 23°C.

Polymer component (A): Polyvinyl butyral having structural units represented by the following formulas (i)-1, (i)-2 and (i)-3 (manufactured by Sekisui Chemical Co., Ltd. "S-REC (registered trademark) B) BL-10", weight average molecular weight 25,000, glass transition temperature 59°C. In the formula, l ₁ is 68 to 74 mol%, m ₁ is 1 to 3 mol%, and n ₁ is about 28 mol%.)

[Formula 1]

In the formula, l ₁ , m ₁ and n ₁ are the content ratio (mol%) of each structural unit.

Epoxy resin (B1): liquid bisphenol A type epoxy resin (“EPICLON (registered trademark) EXA-4850-1000” manufactured by DIC, epoxy equivalent 404 to 412 g/eq)

Epoxy resin (B2): dicyclopentadiene type epoxy resin (“EPICLON (registered trademark) HP-7200” manufactured by DIC, epoxy equivalent 254 to 264 g/eq)

・Heat curing agent (B3): Novolak type phenolic resin (“Showunol (registered trademark) BRG-556” manufactured by Showa Denko)

・Curing accelerator (C): 2-phenyl-4,5-dihydroxymethylimidazole (“Cuazole (registered trademark) 2PHZ” manufactured by Shikoku Chemical Industry Co., Ltd.)

Filler (D): spherical silica modified with an epoxy group ("Adomano (registered trademark) YA050C-MKK" manufactured by Adomatech, average particle diameter 0.05 μm)

<Manufacture of curable resin layer>

The composition for forming a curable resin layer obtained above is coated on the release treated surface of a release film (“SP-PET381031” manufactured by Lintec, 38 μm thick) in which one side of the polyethylene terephthalate film has been subjected to a release treatment by silicone treatment, , and heat-dried at 120°C for 2 minutes to obtain a curable resin layer having a thickness of 30 µm.

The thickness of the curable resin layer was measured using a contact type thickness meter (manufactured by Techrac Co., Ltd., product name "PG-02").

<Manufacture of laminate for forming protective layer>

Then, using an adhesive tape (“E-8510HR” manufactured by Lintec Corporation) as a support sheet, by bonding the above-described curable resin layer on the peeling film to the sticking target layer of the adhesive tape, the support sheet, curable resin layer, and peeling A layered product for forming a protective layer, configured by laminating films in this order in these thickness directions, was obtained.

In the layered product for forming a protective layer obtained above, the release film is removed, and the exposed surface of the curable resin layer (exposed surface) is pressed against the bump formation surface of an 8-inch φ bump wafer, thereby forming a semiconductor chip wafer. A layered product for forming a protective layer was attached to the bump formation surface. At this time, the affixing of the layered product for forming a protective layer was performed using an affixing device (roller type laminator, “RAD-3510 F/12” manufactured by Lintec) at a table temperature of 90° C., an affixing speed of 2 mm/sec, and an affixing pressure of It implemented while heating the curable resin layer on conditions of 0.5 MPa. As the 8-inch phi bump wafer, a 0.4 mm pich BGA wafer for semiconductor chip production (WLPTEGM2 manufactured by Walts) having a bump height of 210 μm, a bump width of 250 μm, and a distance between adjacent bumps of 400 μm was used. used

As a result, a laminated structure formed by sticking the laminated body for forming a protective layer on the bump formation surface of the wafer for semiconductor chip manufacturing was obtained.

Next, as step (C1-2), the surface opposite to the bump formation surface of the semiconductor wafer was ground in a state where the laminate for forming a protective layer was formed on the bump formation surface.

Here, the bump formation surface side of the wafer for semiconductor chip production to which the laminate for forming a protective layer was attached was fixed on a chuck table, and the back surface of the wafer for semiconductor chip production was ground using a grinder polisher ("DGP8761" manufactured by Disco Co., Ltd.) did The thickness after grinding of the wafer for semiconductor chip production was 200 micrometers.

Next, as step (C1-3), the support sheet is peeled off from the laminate for forming a protective layer using a tape remover for BG ("RAD-3010F/12" manufactured by Lintec Corporation), and curable water is removed on the bump formation surface. strata were formed.

Next, as a step (C2), the curable resin layer formed on the bump formation surface of the wafer for semiconductor chip production was cured to form a protective layer. Here, curing of the curable resin layer was performed by heat treatment in a pressure oven (RAD-9100 manufactured by Lintec Co., Ltd.) under heating conditions of temperature: 130°C, time: 2 hours, and furnace pressure: 0.5 MPa.

Next, as a step (C-X), an exposure treatment was performed in which the tops of the bumps were exposed by removing the protective layer covering the tops of the bumps before being subjected to the next step (C3). Specifically, plasma etching treatment (plasma cleaning) was performed under the following conditions.

·Processing gas: Tetrafluoromethane

Flow rate of processing gas: 40 cm 3 / min

·Treatment pressure: 100 Pa

·Output : 250 W

・Processing time: 15 minutes

·Purge: 1 time

Next, as step (C3), using a multi-function wafer mounter ("RAD-2510F/12" manufactured by Lintec Corporation), the wafer for semiconductor chip production with a protective layer is placed on the dicing tape, and the bump formation surface side was cut into pieces to obtain a semiconductor chip whose bump formation surface was protected by a protective layer.

Next, as step (E1), the semiconductor chips are individually placed on the covering sheet using the laminate for forming the covering sheet prepared as described below, so that the bumps and the bump formation surface are covered with the covering sheet. It was made into a coated state.

<Preparation of composition for forming buried layer>

100 parts by mass of a solution (solid content: 33.6% by mass) of an acrylic copolymer (weight average molecular weight (Mw) 400,000) composed of 90 parts by mass of n-butyl acrylate (BA) and 10 parts by mass of acrylic acid (AAc), and n-butyl acrylate (BA ) 2-methacryloyloxyethyl isocyanate to an acrylic copolymer composed of 62 parts by mass, 10 parts by mass of methyl methacrylate (MMA) and 28 parts by mass of 2-hydroxyethyl acrylate (HEA), 2-hydroxyethyl acrylate ( HEA) 50 parts by mass of a solution (solid content: 45% by mass) of a resin (average weight molecular weight (Mw) 100,000) added so that the addition rate is 80 mol% with respect to 100 mol%, and tolylene diisocyanate (manufactured by Toyochem Co., Ltd., as a crosslinking agent) Product name "BHS-8515", solid content concentration: 37.5%) 2.5 parts by mass was added and stirred for 30 minutes to prepare a composition for forming a buried layer.

<Preparation of composition for forming pressure-sensitive adhesive layer>

2-methacryloyloxyethyl isocyanate for an acrylic copolymer composed of 74 parts by mass of n-butyl acrylate (BA), 20 parts by mass of methyl methacrylate (MMA), and 6 parts by mass of 2-hydroxyethyl acrylate (HEA) (about 50 mol% relative to HEA) was added to prepare a resin solution (adhesive base material, solid content: 35% by mass). 0.5 parts by mass of tolylene diisocyanate (manufactured by Toyochem Co., Ltd., product name "BHS-8515", solid content concentration: 37.5%) as a crosslinking agent was added to 100 parts by mass of the main pressure-sensitive adhesive, and stirred for 30 minutes to form an adhesive layer. A composition was prepared.

<Manufacture of pressure-sensitive adhesive layer>

The composition for forming the pressure-sensitive adhesive layer was coated on the release-treated surface of a release film (“SP-PET381031” manufactured by Lintec, 38 μm thick) in which one side of the film made of polyethylene terephthalate was subjected to release treatment by silicone treatment, and at 100° C. By heating and drying for 1 minute, an adhesive layer having a thickness of 20 μm was prepared.

<Method for Manufacturing Laminate for Forming Sheet for Coating>

Similarly to Example 1 described in International Publication No. 2020/032175, a laminate for forming a coating sheet was prepared as follows. Details are as follows.

A composition for forming an embedding layer was coated on a release-treated surface of a release film ("SP-PET381031" manufactured by Lintec, 38 µm thick) in which one side of a film made of polyethylene terephthalate was subjected to release treatment by silicone treatment, and heated at 100°C for 1 minute. After drying, a release treatment surface of a release film (“SP-PET382150” manufactured by Lintec, 38 μm in thickness) in which one side of a film made of polyethylene terephthalate has been subjected to release treatment by silicone treatment is laminated on the composition for forming a buried layer, A 50 μm buried layer was prepared.

The surfaces of the embedding layer obtained by peeling off the laminated release film were bonded together to form an embedding layer having a thickness of 100 µm. In the same manner, the embedding layer was bonded and laminated to produce a buried layer having a thickness of 300 µm.

A 300 μm thick embedding layer was bonded to a 20 μm thick pressure-sensitive adhesive layer to produce a laminate 81 for forming a covering sheet having a viscoelastic layer 82 having a thickness of 320 μm as shown in FIG. 8 .

The release film 85 on the side of the embedding layer 83 of the laminate 81 for forming the coating sheet is peeled off, and a polyethylene terephthalate (PET) film (product name “Cosmo Shine A4100”, thickness 50 μm, Toyobo Co., Ltd. production), to prepare a covering sheet having a base material/embedding layer (83)/adhesive layer (84)/release film (86). The bump formation surface was crimped|bonded with the sheet|seat for coating from which the peeling film 86 was peeled under the press pressure (load 1.1 Mpa), 40 s of press time, and 50 degreeC of heating time.

Next, as step (A), a shield layer made of copper was formed on the semiconductor chip whose bump formation surface was protected with a protective layer made of a cured product of a curable resin under the following conditions.

·Target: Copper

Method: DC magnetron sputtering

Applied method: DC500W

Substrate heating: 150 ℃

Carrier gas: argon

·Film formation pressure 3.4 Pa

Finally, as a step (B), the semiconductor chip with the shield layer was picked up, the covering sheet was peeled from the bump and the semiconductor wafer, and the semiconductor chip covered with the shield layer was taken out.

(Example 2)

In Example 1, as in the first embodiment, step (C1-1), step (C1-2), step (C1-3), step (C2), step (C-X), step (C3), Instead of performing steps (E1), (A), and (B) in this order, as in the second embodiment, steps (C1-1), (C1-2), and (C1-3) ), step (C2), step (C-X), step (C3), step (E2), step (F), step (A), step (B) in the same order as in Example 1 except that , a semiconductor device was manufactured, and the bump formation surface was observed.

As a result, the conductive material was not present on the bump formation surface and the bumps.

In addition, for step (C1-1), step (C1-2), step (C1-3), step (C2), step (C-X), step (C3), step (A) and step (B), Each was carried out in the same manner as in Example 1. Step (E2) and step (F), which are different from those in Example 1, will be described in detail below.

As a step (E2), the semiconductor chips were collectively placed on the covering sheet so that the bumps and the bump formation surface were covered with the covering sheet. The step (E2) was performed in the same manner as the step (E1) described above, except that the semiconductor chips were collectively mounted instead of individually mounted. In addition, instead of the polyethylene terephthalate (PET) film (product name "Cosmo Shine A4100", thickness 50 μm, manufactured by Toyobo Co., Ltd.) of Example 1 as a base material for the coating sheet, a polyester polyurethane elastomer sheet (manufactured by Sidom Co., Ltd., Product name "High Gress DUS202", thickness 50 μm) was used.

As a step (F), the covering sheet on which the semiconductor chips were placed was expanded in the arrangement direction of the semiconductor chips using an expander.

(Example 3)

In Example 1, as in the first embodiment, step (C1-1), step (C1-2), step (C1-3), step (C2), step (C-X), step (C3), Instead of performing steps (E1), (A), and (B) in this order, as in the third embodiment, steps (C1-1), (C1-2), and (C1-3) ), step (C2), step (C-X), step (C3), step (F), step (A), and step (B) in this order, except that the semiconductor device was manufactured in the same manner as in Example 1. Thus, the bump formation surface was observed.

As a result, the conductive material was not present on the bump formation surface and the bumps.

Step (C1-1), Step (C1-2), Step (C1-3), Step (C2), and Step (C-X) were each carried out in the same manner as in Example 1, and Step (C3) In the same manner as in the step (C3) of Example 2 (ie, the step (C3) of Example 1) except that the wafer with bumps on which the protective layer is formed is cut from the side opposite to the bump formation surface and separated into pieces. and the steps (F), (A), and (B) were carried out in the same manner as in Example 2. Further, in the step (C3) of Example 3, the coating sheet used in Example 2 was used as the dicing tape, and the bump formation surface was coated with the coating sheet as the dicing tape. The formed surface side was placed on the dicing tape (sheet for coating).

(Example 4)

As in the fourth embodiment, step (C4), step (C5), step (C6), step (C-Y), step (C7), step (C-X), step (C8), step (E1), step ( A) and process (B) were performed in this order. It is described in detail below.

In addition, in order to confirm the existence of the conductive material on the bump formation surface, the bump formation surface was observed with an optical microscope (manufactured by KEYENCE, model name: VHX-1000). As a result, the conductive material was not present on the bump formation surface and the bumps.

First, as step (C4), a semiconductor chip fabrication wafer was prepared in which grooves as division lines were formed on the bump formation surface without reaching the surface opposite to the bump formation surface. Here, as a wafer for semiconductor chip production, a half-cut 12-inch silicon wafer (wafer thickness: 775 μm) was prepared. The width of the half-cut portion (width of the groove portion) of the silicon wafer was 200 μm, and the depth of the groove was 200 μm.

Next, as a step (C5), the bump formation surface of the wafer for semiconductor chip production was covered with curable resin, and the curable resin was embedded in the grooves formed in the wafer for semiconductor chip production. Details will be described below.

A layered product obtained by laminating a support sheet (“E-8510HR” manufactured by Lintec) and a curable resin layer having a thickness of 90 μm as a support sheet on the front surface side (half-cut formation surface) of the wafer for semiconductor chip production, with the curable resin side It was made into the sticking surface, and it stuck while pressing under the following conditions.

Attachment device: Fully automatic vacuum bonding machine (manufactured by Lintec Co., Ltd., product name "RAD-3810")

·Vacuum degree: 0.1 ㎪

·Patting pressure 1: 10.00 kPa

·Patting pressure 2: 90.00 kPa

· Attachment time: 60 sec

Attachment speed: 4 mm/sec

・Attachment temperature: 100 ℃

In addition, the curable resin in the curable resin layer was manufactured using a thermosetting resin composition.

Components used for preparation of the thermosetting resin composition are shown below.

･Polymer component

Polymer component: obtained by copolymerizing 55 parts by mass of butyl acrylate (BA), 10 parts by mass of methyl acrylate (MA), 20 parts by mass of glycidyl methacrylate (GMA), and 15 parts by mass of 2-hydroxyethyl acrylate (HEA) Acrylic resin (weight average molecular weight 800,000, glass transition temperature - 28 ° C).

・Epoxy resin

Epoxy resin 1: Liquid bisphenol F-type epoxy resin ("YL983U" by Mitsubishi Chemical Corporation); Weight average molecular weight = 340

Epoxy resin 2: Polyfunctional aromatic type epoxy resin ("EPPN-502H" by Nippon Kayaku Co., Ltd.); Weight average molecular weight = 1,000

Epoxy resin 3: Dicyclopentadiene type epoxy resin ("EPICLON HP-7200" by DIC Corporation); Weight average molecular weight = 600

・Heat curing agent

Heat curing agent: Novolak type phenolic resin (“BRG-556” manufactured by Showa Denko Co., Ltd.)

・Curing accelerator

Curing accelerator: 2-phenyl-4,5-dihydroxymethylimidazole ("Cuazole 2PHZ-PW" manufactured by Shikoku Kasei Industrial Co., Ltd.)

·filling

Filler: Spherical silica modified with an epoxy group ("Adomano YA050C-MKK" by Adomatech); 0.05 μm (average particle diameter); 19% by mass (content in thermosetting resin composition)

100 parts by mass of the polymer component, 135 parts by mass of the epoxy resin 1, 90 parts by mass of the epoxy resin 2, 150 parts by mass of the epoxy resin 3, 180 parts by mass of the heat curing agent, 1 part by mass of the curing accelerator, and 160 parts by mass of the filler Part, it was dissolved or dispersed in methyl ethyl ketone, and stirred at 23°C to prepare a thermosetting resin composition having a solid content concentration of 55% by mass.

The heat-curable resin composition obtained above was coated on the release-treated surface of a release film ("SP-PET381031" manufactured by Lintec, 38 µm thick) in which one side of the polyethylene terephthalate film was subjected to release treatment by silicone treatment, and By drying for 2 minutes at , a thermosetting resin film having a thickness of 90 µm and thermal curability was produced as the curable resin.

Next, the exposed surface of the curable resin was bonded to the exposed surface of the pressure-sensitive adhesive layer of the support sheet, and a laminate was obtained in which the support sheet, the curable resin, and the release film were laminated in this order in the thickness direction.

When attaching this laminated body to the wafer for semiconductor chip production, the peeling film was peeled from the laminated body, and curable resin was exposed and used.

Next, as a step (C6), a grinder polisher ("DGP8761" manufactured by Disco Co., Ltd.) was used to grind the back surface of the wafer for semiconductor chip production opposite to the bump formation surface in a state where the laminate was attached. Then, as a process (C-Y), the support sheet was peeled from the layered product using a tape remover for BG (“RAD-3010F/12” manufactured by Lintec Corporation).

Next, as a step (C7), the curable resin was cured to obtain a wafer for semiconductor chip fabrication with a cured resin film as a protective layer. Here, curing of the curable resin layer was performed by heat treatment in a pressure oven (RAD-9100 manufactured by Lintec Co., Ltd.) under heating conditions of temperature: 130°C, time: 2 hours, and furnace pressure: 0.5 MPa.

Next, as a step (C-X), an exposure treatment was performed in which the tops of the bumps were exposed by removing the protective layer covering the tops of the bumps before being subjected to the next step (C8). Specifically, plasma etching treatment (plasma cleaning) was performed under the following conditions.

·Processing gas: Tetrafluoromethane

Flow rate of processing gas: 40 cm 3 / min

·Treatment pressure: 100 Pa

·Output : 250 W

・Processing time: 15 minutes

·Purge: 1 time

Next, as step (C8), using a multi-function wafer mounter ("RAD-2510F/12" manufactured by Lintec Corporation), a wafer for semiconductor chip production with a protective layer is placed on a dicing tape, and as a protective layer The part formed in the groove part of the cured resin film of the wafer for semiconductor chip production with a cured resin film was cut along the line to be divided from the bump formation surface side, and it was divided into pieces.

In addition, the process (E1), the process (A), and the process (B) were implemented similarly to Example 1, respectively.

(Example 5)

In Example 4, as in the fourth embodiment, Step (C4), Step (C5), Step (C6), Step (C-Y), Step (C7), Step (C-X), Step (C8), Step Instead of performing (E1), step (A), and step (B) in this order, as in the fifth embodiment, step (C4), step (C5), step (C6), step (C-Y), Process (C7), process (C-X), process (C8), process (E2), process (F), process (A), and process (B) were carried out in this order, but in the same manner as in Example 4, semiconductor A device was fabricated and the bump formation surface was observed.

As a result, the conductive material was not present on the bump formation surface and the bumps.

Steps (C4) to (C8) were carried out in the same manner as in Example 4, respectively, and Step (E2), Step (F), Step (A), and Step (B) were carried out in the same manner as in Example 2. conducted.

(Example 6)

In Example 4, as in the fourth embodiment, Step (C4), Step (C5), Step (C6), Step (C-Y), Step (C7), Step (C-X), Step (C8), Step Instead of performing (E1), step (A), and step (B) in this order, as in the sixth embodiment, step (C4), step (C5), step (C6), step (C-Y), A semiconductor device was manufactured in the same manner as in Example 4 except that steps (C7), steps (C-X), steps (C8), steps (F), steps (A), and steps (B) were performed in this order, The bump formation surface was observed. In addition, here, similarly to Example 3, the wafer with bumps on which the protective layer was formed was cut into pieces from the side opposite to the bump formation surface.

As a result, the conductive material was not present on the bump formation surface and the bumps.

Further, the steps (C4) to (C-X) were carried out in the same manner as in Example 4, respectively, except that the step (C8) was cut from the side opposite to the bump formation surface and separated into pieces, the step of Example 5 ( C8) (ie, step (C8) of Example 4) was carried out in the same manner as in Example 5, and Step (F), Step (A), and Step (B) were carried out. Further, in the step (C8) of Example 6, the coating sheet used in Example 5 was used as the dicing tape so that the coating sheet as the dicing tape covered the bump formation surface of the semiconductor wafer. The bump formation surface side was mounted on the dicing tape (sheet for coating).

INDUSTRIAL APPLICABILITY The present invention can be used for manufacturing semiconductor devices and the like that have bumps in connection pad portions, which are used in flip chip mounting methods. In addition, the present invention can also be used for manufacturing packages, fan-outs, and the like.

10 Semiconductor wafers with bumps (wafers with bumps, wafers for manufacturing semiconductor chips)
11 semiconductor wafer (wafer)
11a circuit side (bump formation side)
If 11b
12 bump
13 Groove
20 curable resin layer
20a curable resin
30 Laminate for forming protective layer
30a support sheet
31 supporting materials
32 buffer layer
33 adhesive layer
40 protective layer
80 coating sheet
81 Laminate for forming sheet for coating
82 Viscoelastic layer
83 landfill layer
84 adhesive layer
85 release film
86 release film
90 shield layer
100 semiconductor chips

Claims (15)

A method for manufacturing a semiconductor device including the following step (A).
Step (A): A step of forming a shield layer on a semiconductor chip in which the bump formation surface of a semiconductor wafer on which bumps are formed is protected with a protective layer made of a cured product of a curable resin, wherein at least either of the bumps or the bump formation surface is A step of forming a shield layer on at least a part of a portion of the semiconductor chip exposed from the coating sheet in a state covered by the taking sheet According to claim 1,
The manufacturing method of the semiconductor device which further includes the following process (B).
Step (B): Step of peeling the covering sheet from at least one of the bumps and the semiconductor wafer after forming the shield layer on the semiconductor chip in the step (A) According to claim 1 or 2,
Further comprising a step (C) of manufacturing the semiconductor chip,
A method of manufacturing a semiconductor device, wherein the step (C) includes the following steps (C1) to (C3) in this order.
Step (C1): Step of forming a curable resin layer on the bump formation surface
Step (C2): Step of curing the curable resin layer to form the protective layer
Step (C3): A step of slicing the semiconductor wafer on which the protective layer is formed to obtain a semiconductor chip in which the bump formation surface is protected by the protective layer According to claim 3,
A method of manufacturing a semiconductor device in which the step (C1) includes the following steps (C1-1) and (C1-3).
Step (C1-1): A step of attaching a layered product for forming a protective layer having a laminated structure in which a support sheet and a curable resin layer are laminated on the bump formation surface, with the curable resin layer serving as the sticking surface.
Step (C1-3): Step of peeling the support sheet from the laminate for forming a protective layer and forming the curable resin layer on the bump formation surface According to claim 4,
A method for manufacturing a semiconductor device, wherein the step (C1) further includes the following step (C1-2).
Step (C1-2): A step of grinding the surface of the semiconductor wafer opposite to the bump formation surface According to claim 3 or 4,
The method of manufacturing a semiconductor device, wherein the step (C) further includes a step (C0) after the step (C2).
Step (C0): A step of grinding the surface of the semiconductor wafer opposite to the bump formation surface According to any one of claims 3 to 6,
In the step (C3), the manufacturing method of the semiconductor device is cut from the bump formation surface side and separated into individual pieces. According to any one of claims 3 to 6,
In the step (C3), the manufacturing method of the semiconductor device is cut into pieces from the side opposite to the bump formation surface. According to claim 1 or 2,
Further comprising a step (C′) of manufacturing the semiconductor chip,
A method of manufacturing a semiconductor device in which the step (C') includes the following steps (C4) to (C8).
Step (C4): Step of preparing a semiconductor chip fabrication wafer in which grooves as division lines are formed on the bump formation surface without reaching the surface opposite to the bump formation surface
Step (C5): A step of coating the bump formation surface of the semiconductor chip fabrication wafer with the curable resin and burying the curable resin in the groove portion formed in the semiconductor chip fabrication wafer
Step (C6): A step of grinding the surface of the semiconductor chip fabrication wafer on the side opposite to the bump formation surface
Step (C7): A step of curing the curable resin to obtain a semiconductor chip fabrication wafer with the protective layer
Step (C8): A step of obtaining a semiconductor chip having the bump formation surface and side surface protected by the protective layer by singling the semiconductor chip fabrication wafer with the protective layer into pieces along the line to be divided According to claim 9,
In the step (C8), the manufacturing method of the semiconductor device is cut from the side of the bump formation surface and separated into individual pieces. According to claim 9,
In the step (C8), the manufacturing method of the semiconductor device is cut from the side opposite to the bump formation surface and separated into individual pieces. According to any one of claims 1 to 11,
The manufacturing method of the semiconductor device which further includes the following process (E1).
Step (E1): A step of individually placing the semiconductor chips on the covering sheet so that at least either of the bumps and the bump formation surfaces are covered with the covering sheet According to any one of claims 1 to 11,
The manufacturing method of the semiconductor device which further includes the following process (E2).
Step (E2): A step of placing the semiconductor chips collectively on the covering sheet so that at least either of the bumps and the bump formation surfaces are covered with the covering sheet. According to any one of claims 1 to 13,
The manufacturing method of the semiconductor device which further includes the following process (F).
Step (F): Step of expanding the covering sheet on which the semiconductor chips are placed According to any one of claims 1 to 11,
A method for manufacturing a semiconductor device further comprising the following steps (G) to (I).
Step (G): Step of placing the semiconductor chip on an expansion tape
Step (H): Step of expanding the expansion tape on which the semiconductor chip is mounted
Step (I): Step of transferring the semiconductor chip placed on the expanded tape to the covering sheet

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