KR20220159635A - Cyclopentadithiophene 기반의 유기트랜지스터(organic field-effect transistors OFETs)에 적용 가능한 전도성 고분자 제조방법 - Google Patents
Cyclopentadithiophene 기반의 유기트랜지스터(organic field-effect transistors OFETs)에 적용 가능한 전도성 고분자 제조방법 Download PDFInfo
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Abstract
본발명은 Cyclopentadithiophene 기반의 유기트랜지스터(organic field-effect transistors, OFETs)에 적용 가능한 전도성 고분자 제조방법에 관한 것으로, 산소(O), 황(S), 셀레니움(Se)을 각각 갖는 퓨란(furan), 싸이오펜(thiophene), 셀레노펜(selenophene)을 활용하여 유기트랜지스터에 적용 가능한 CFC-O, CFC-S, CFC-Se 전도성 고분자 재료를 하기 화학식 1과 같이 각각 합성하는 것으로,
[화학식 1]
본발명의 제조방법에 의해 제조되는 전도성 고분자 (conjugated polymer)는 유연성 (flexibility), 광전기적 특성(optoelectronic properties)이 좋고,제조경비가 저렴하며, 고분자 배열의 정도가 증가하며, 유기트랜지스터의 성능이 열처리 후 증가하는 현저한 효과가 있다.
[화학식 1]
본발명의 제조방법에 의해 제조되는 전도성 고분자 (conjugated polymer)는 유연성 (flexibility), 광전기적 특성(optoelectronic properties)이 좋고,제조경비가 저렴하며, 고분자 배열의 정도가 증가하며, 유기트랜지스터의 성능이 열처리 후 증가하는 현저한 효과가 있다.
Description
본발명은 Cyclopentadithiophene 기반의 유기트랜지스터(organic field-effect transistors, OFETs)에 적용 가능한 전도성 고분자 제조방법에 관한 것으로, 유연성 (flexibility), 광전기적 특성(optoelectronic properties)이 좋고, 제조경비가 저렴하며, 고분자 배열의 정도가 증가하며, 유기트랜지스터의 성능이 열처리 후 증가하는 전도성 고분자에 관한 것이다.
일반적으로 용액공정(solution-processable)이 가능한 전도성 고분자 (conjugated polymer)는 유연성 (flexibility), 광전기적 특성(optoelectronic properties), 매우 낮은 가격(low-cost) 등의 장점으로 유기반도체에 많이 사용한다. 유기반도체는 유비쿼터스 시대의 유연 디스플레이, RFID (radio frequency identification), 센서 등으로 활용이 가능하다. 유기트랜지스터 재료에 관한 개발은 많이 진행되었지만 원자 크기에 따른 전하 이동도의 차이를 체계적으로 개발한 기술은 없었다.
그리고 종래특허기술의 일례로서, 등록번호 10-0229581호에는 전기 전도 성페이스트재료 및 응용에 관한 것으로, 각각 Sn, Zn, In, Bi 및 Sb로 이루어진 군에서 선택된 전기 전도성 코팅을 갖는, Cu, Au, Ag, Al, Pd, Pt로 이루어진 군에서 선택된 재료로 형성된 복수개로 이루어지며, 이 입자들 중 적어도 일부는 다른 상기 입자들과 상기 전기 전도성 코팅을 통해 융합되며, 상기 복수개의 입자들이 폴리이미드, 실록산, 폴리이미드실록산 및 리그닌, 셀룰로오즈, 동유 및 작황유로부터 유도된 생물질-기재 고분자 수지로 이루어진 군에서 선택된 고분자 재료 내에 매립된 구조물이 공개되어 있다.
또한, 등록특허공보 등록번호 10-1771978호의 불소 함유 중합체 재료를 포함하는 패턴형성된 구조를 얻는 방법, 등록특허공보 등록번호 10-1359288호의 유기 전계 발광 소자 및 그 제조 공개특허공보 공개번호 10-2011-0051186의 중합체, 발광층 재료, 유기 전계 발광 소자 재료, 유기 전계 발광 소자용 조성물, 이들을 이용한 유기 전계 발광 소자, 태양 전지 소자, 유기 EL 표시 장치, 및 유기 EL 조명이 공개되어 있다.
그러나 상기 종래기술들은 원자 크기에 따른 전하 이동도의 차이를 체계적으로 개발하지 못하여, 유연성 (flexibility), 광전기적 특성(optoelectronic properties)이 좋지 않고, 제조경비가 고가인 문제점이 여전히 있었다.
따라서 본 발명은 상기와 같은 문제점을 해결하고자 안출된 것으로, 유연성 (flexibility), 광전기적 특성(optoelectronic properties)이 좋고,제조경비가 저렴하며, 고분자 배열의 정도가 증가하며, 유기트랜지스터의 성능이 열처리 후 증가하는 전도성 고분자 (conjugated polymer)를 제공하고자 하는 것이다.
본발명은 Cyclopentadithiophene 기반의 유기트랜지스터(organic field-effect transistors, OFETs)에 적용 가능한 전도성 고분자 제조방법에 관한 것으로, 산소(O), 황(S), 셀레니움(Se)을 각각 갖는 퓨란(furan), 싸이오펜(thiophene), 셀레노펜(selenophene)을 활용하여 유기트랜지스터에 적용 가능한 CFC-O, CFC-S, CFC-Se 전도성 고분자 재료를 하기 화학식 1과 같이 합성하는 것을 특징으로 한다.
[화학식 1]
따라서 본발명의 제조방법에 의해 제조되는 전도성 고분자 (conjugated polymer)는 유연성 (flexibility), 광전기적 특성(optoelectronic properties)이 좋고,제조경비가 저렴하며, 고분자 배열의 정도가 증가하며, 유기트랜지스터의 성능이 열처리 후 증가하는 현저한 효과가 있다.
도 1. 4,7-bis(6-bromo-4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-5-fluorobenzo[c][1,2,5]thiadiazole 단량체를 합성공정도
도 2. (a) Cyclic voltammogram)s of and normalized UV-vis-NIR absorption spectra of CFC-O, CFC-S, CFC-Se in (b) thin film and (c) chlorobenzene solution. (d) HOMO and LUMO energy levels of the polymers.
도 3. (a) Two-dimensional grazing incidence wide-angle x-ray scattering (2D GI-WAXD) patterns obtained for CFC-O, CFC-S and CFC-Se films. (b) Vertical and (c) horizontal GIWAXS profiles of CFC-O, CFC-S and CFC-Se films, where qz and qxy are the perpendicular and parallel wave vector transfers with respect to sample surface, respectively.
도 4. Atomic force microscopy topographic images of as-cast polymers films: (a) CFC-O, (b) CFC-S, and (c) CFC-Se. Scale bars indicate 500 nm.
도 5. Atomic force microscopy topographic images of annealed polymers films: (a) CFC-O(210℃), (b) CFC-S(240℃), and (c) CFC-Se(210℃). Scale bars indicate 500 nm.
도 2. (a) Cyclic voltammogram)s of and normalized UV-vis-NIR absorption spectra of CFC-O, CFC-S, CFC-Se in (b) thin film and (c) chlorobenzene solution. (d) HOMO and LUMO energy levels of the polymers.
도 3. (a) Two-dimensional grazing incidence wide-angle x-ray scattering (2D GI-WAXD) patterns obtained for CFC-O, CFC-S and CFC-Se films. (b) Vertical and (c) horizontal GIWAXS profiles of CFC-O, CFC-S and CFC-Se films, where qz and qxy are the perpendicular and parallel wave vector transfers with respect to sample surface, respectively.
도 4. Atomic force microscopy topographic images of as-cast polymers films: (a) CFC-O, (b) CFC-S, and (c) CFC-Se. Scale bars indicate 500 nm.
도 5. Atomic force microscopy topographic images of annealed polymers films: (a) CFC-O(210℃), (b) CFC-S(240℃), and (c) CFC-Se(210℃). Scale bars indicate 500 nm.
본발명은 Cyclopentadithiophene 기반의 유기트랜지스터(organic field-effect transistors, OFETs)에 적용 가능한 전도성 고분자 제조방법에 관한 것으로, 산소(O), 황(S), 셀레니움(Se)을 각각 갖는 퓨란(furan), 싸이오펜(thiophene), 셀레노펜(selenophene)을 활용하여 유기트랜지스터에 적용 가능한 CFC-O, CFC-S, CFC-Se 전도성 고분자 재료를 하기 화학식 1과 같이 각각 합성하는 것을 특징으로 한다.
[화학식 1]
또한, CFC-O, CFC-S, CFC-Se 고분자 합성과정은 4ml 톨루엔용매에 4,7-bis(6-bromo-4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-5-fluorobenzo[c][1,2,5]thiadiazole, tetrakis(triphenylphosphine)-palladium(0) 을 넣고, 교반하면서 가열하는 단계;
반응물을 메탄올에 침전시키고 결과로 나온 고체를 여과하는 단계;를 포함하여 제조되는 것을 특징으로 한다.
또한, 상기 여과후 잔여물은 클로로포름으로 추출하여 PTDPPSBS-SiC5를 합성하는 것을 특징으로 한다.
본발명을 첨부도면에 의해 상세히 설명하면 다음과 같다.
본 발명에서는 산소(O), 황(S), 셀레니움(Se)을 각각 갖는 퓨란(furan), 싸이오펜(thiophene), 셀레노펜(selenophene)을 활용하여 유기트랜지스터에 적용 가능한 3가지 종류의 고분자 재료를 합성하였고 화학구조는 아래와 같다.
아래는 CFC-O, CFC-S, CFC-Se의 화학구조도이다.
유기트랜지스터에 사용 가능한 전도성 고분자 CFC-O, CFC-S, CFC-Se을 합성하기 위하여
4,7-bis(6-bromo-4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-5-fluorobenzo[c][1,2,5]thiadiazole 단량체를 합성하였고 자세한 합성과정은 도 1과 같다.
4,7-bis(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-5-fluorobenzo[c][1,2,5]thiadiazole (1)아르곤 환경에서 150 ml 톨루엔 용매에 (4,4-Dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)trimethylstannane (7.48 g, 9.99 mmol)과 4,7-dibromo-5-fluorobenzo[c][1,2,5]thiadiazole (1.25 g, 3.10 mmol)을 녹였다. 그리고 Pd(dba)2 (0.07 g, 0.12 mmol)와 tri(o-tolyl)phosphine (0.15g, 0.48mmol)을 첨가하고, 교반하면서 95℃로 24시간 가열하였다. 반응 혼합물을 냉각시킨후 후, 증류수로 반응을 중단시켰다. 이후 클로로포름으로 유기층을 추출하고, 증류수로 행군 다음 MgSO4로 수분을 제거했다. 용매는 회전증발 농축기를 이용해 증발시켰다. 혼합물은 헥산으로 고정된 실리카 크로마토그래피로 분리 정제했다. 처음에는 핵산으로만 분리한 후 핵산과 클로로포름의 부피비가 95 : 5인 용액까지 극성을 천천히 올리면서 분리 정제를 하여 5.06 g 의 생성물
4,7-bis(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-5-fluorobenzo[c][1,2,5]thiadiazole를 수득률 75%로 합성하였다.
4,7-bis(6-bromo-4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-5-fluorobenzo[c][1,2,5]thiadiazole (2)
4,7-bis(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-5-fluorobenzo[c][1,2,5]thiadiazole (4.2 g, 2.99 mmol) 용액을 넣은 후, N-Bromosuccinimide (NBS, 1.17 g, 6.58 mmol)을 천천히 첨가했다. 빛을 차단한 후, 실온에서 24시간동안 교반하였다. 반응물은 증류수로 반응을 중단시켰으며, 메틸렌클로라이드로 유기층을 추출한 후 NaCl 용액으로 다른층에 있을 유기물을 한 번 더 추출했다. 유기층에 남아있는 수분은 MgSO4를 이용해 수분을 제거했다. 용매는 회전증발농축기를 이용해 증발시켰으며, 헥산을 이용한 컬럼크로마토 그래피로 생성물을 분류 정제하여 3.5 g 의 4,7-bis(6-bromo-4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-5-fluorobenzo[c][1,2,5]thiadiazole 생성물을 75%의 수득률로 합성하였다.
도 1은 고분자 CFC-O, CFC-S, CFC-Se의 합성과정이다.
CFC-O, CFC-S, CFC-Se 고분자 합성과정
4ml 톨루엔용매에
4,7-bis(6-bromo-4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-5-fluorobenzo[c][1,2,5]thiadiazole (0.20 mmol), tetrakis(triphenylphosphine)-palladium(0) (4.0 ㎛ol)을 넣고, 교반하면서 24시간동안 95℃로 가열하였다. 반응물을 300ml 메탄올 침전시키고 결과로 나온 고체를 여과하였다. 작은 분자량을 가지는 물질을 제거하기 위해 메탄올, 아세톤, 헥산 그리고 메틸렌클로라이드 순으로 Soxhlet 추출을 거쳤다. 잔여물은 클로로포름으로 추출하여 PTDPPSBS-SiC5를 합성하였다. 수득율이 77%인 어두운 갈색을 띄는 CFC-O, CFC-S, CFC-Se를 합성하였다.
화합물 2와 2,5-bis(trimethylstannyl)furan, 2,5-bis(trimethylstannyl)thiophene, 2,5-bis(trimethylstannyl)selenophene를 Ph(PPh3)4 촉매를 사용하여 Stille polycondensation 반응으로 고분자 CFC-O, CFC-S, CFC-Se를 각각 합성하였다. 합성한 전도성 고분자의 광학적 특성과 에너지 준위를 분광광도법과 순환전압전류법으로 각각 분석을 하였다.
도 2. (a) Cyclic voltammogram)s of and normalized UV-vis-NIR absorption spectra of CFC-O, CFC-S, CFC-Se in (b) thin film and (c) chlorobenzene solution. (d) HOMO and LUMO energy levels of the polymers.
이 고분자의 분자배열을 알아보기 위하여 GIWAXS (Grazing incidence wide angle x-ray scattering)를 측정하였다. CFC-O, CFC-S, CFC-Se 모두 열처리 전과 후를 비교했을 때 고분자 배열의 정도가 증가하는 것을 알 수 있었고, 이러한 실험 결과는 유기트랜지스터의 성능이 열처리 후 증가하는 것을 뒷받침하는 실험 결과가 된다.
도 3. (a) Two-dimensional grazing incidence wide-angle x-ray scattering (2D GI-WAXD) patterns obtained for CFC-O, CFC-S and CFC-Se films. (b) Vertical and (c) horizontal GIWAXS profiles of CFC-O, CFC-S and CFC-Se films, where qz and qxy are the perpendicular and parallel wave vector transfers with respect to sample surface, respectively.
도 4. Atomic force microscopy topographic images of as-cast polymers films: (a) CFC-O, (b) CFC-S, and (c) CFC-Se. Scale bars indicate 500 nm.
도 5. Atomic force microscopy topographic images of annealed polymers films: (a) CFC-O(210℃), (b) CFC-S(240℃), and (c) CFC-Se(210℃). Scale bars indicate 500 nm.
CFC-O, CFC-S, CFC-Se의 모폴로지(morphology)를 확인하기 위하여 원자힘 현미경(atomic force microscopy)을 측정하였고 그 결과는 도 4와 5와 같다. 그림 5에서 보는 것과 같이 열처리 전과 후를 비교하였을 때 표면의 거칠기를 나타내는 CFC-O, CFC-S, CFC-Se은 대한 RMS의 값은 증가하는 것을 알 수 있다.
Claims (3)
- 제1항에 있어서, 상기 CFC-O, CFC-S, CFC-Se 고분자 합성과정은
톨루엔용매에 4,7-bis(6-bromo-4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-5-fluorobenzo[c][1,2,5]thiadiazole, tetrakis(triphenylphosphine)-palladium(0) 을 넣고, 교반하면서 가열하는 단계;
반응물을 메탄올에 침전시키고 결과로 나온 고체를 여과하는 단계;를 포함하여 제조되는 것을 특징으로 하는 Cyclopentadithiophene 기반의 유기트랜지스터(organic field-effect transistors, OFETs)에 적용 가능한 전도성 고분자 제조방법 - 제2항에 있어서, 상기 여과후 잔여물은 클로로포름으로 추출하여 PTDPPSBS-SiC5를 합성하는 것을 특징으로 하는 Cyclopentadithiophene 기반의 유기트랜지스터(organic field-effect transistors, OFETs)에 적용 가능한 전도성 고분자 제조방법
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