KR20220149389A - carrier gas supplying apparatus capable of using nitrogen gas only - Google Patents

Abstract

In accordance with one embodiment of the present invention, a carrier gas supply apparatus includes: a nitrogen supply flow path supplied with nitrogen; a helium supply flow path joined with the nitrogen supply flow path, and supplied with helium; a main supply flow path joined with the nitrogen supply flow path and the helium supply flow path, and connected to a gas panel to supply carrier gas to the gas panel; a heater module provided in the main supply flow path and heating the main supply flow path to heat the nitrogen; a micro filter connected to the main supply flow path to filter particles; and a mass flowmeter connected to the main supply flow path and connected to a rear end of the micro filter to measure the flow rate of the carrier gas. Therefore, the present invention is capable of reducing manufacturing costs by avoiding the use of high-cost helium.

Description

Carrier gas supplying apparatus capable of using nitrogen gas only

The present invention relates to a carrier gas supply device, and to a carrier gas supply device capable of using nitrogen gas alone.

SACVD (semi atmospheric chemical vapor deposition) process is a process that proceeds at quasi-atmospheric pressure, which is about half of atmospheric pressure, among various CVD processes. A liquid raw material is instantaneously vaporized in an injector, and the vaporized raw material gas is transported as a carrier. It flows into the process chamber (C) by conveying it as a gas (carrier gas). The gaseous source gas mixed with the carrier gas forms a thin film (hereinafter, 'thin film') by depositing various materials such as SiO ₂ on the target substrate in the process chamber (C).

In general, it is known that helium or nitrogen is used as a carrier gas in the SACVD process. At this time, although nitrogen has a better deposition rate than helium, since nitrogen occupies a lot of heat in the SACVD process, the vaporized source gas loses heat and liquefies again, causing particles to be generated on the surface of the thin film. , which favors helium as a carrier gas and does not use nitrogen.

However, recently, the price of helium has risen more than 10 times compared to the existing one, increasing the manufacturing cost. Therefore, it is necessary to develop a carrier gas supply device capable of using nitrogen that can replace helium as a carrier gas alone or intensively.

SUMMARY OF THE INVENTION An object of the present invention is to provide a carrier gas supply device capable of using nitrogen gas alone.

Carrier gas supply apparatus according to an embodiment of the present invention for solving the above problems, a nitrogen supply passage through which nitrogen is supplied; a helium supply passage joining the nitrogen supply passage and supplying helium; a main supply passage in which the nitrogen supply passage and the helium supply passage are joined and connected to a gas panel to supply a carrier gas to the gas panel; a heater module provided in the main supply passage and heating the nitrogen by heating the main supply passage; a micro filter connected to the main supply passage to filter particles; and a mass flow meter connected to the main supply passage and connected to the rear end of the micro filter to measure the flow rate of the carrier gas. includes

In addition, the heater module may include: a heater pipe connected to the main supply path; a heating unit provided in the heater conduit to heat the heater conduit; a temperature sensor provided in the heater conduit to sense temperature data of the heater conduit; and a temperature controller connected to the temperature sensor and the heating unit to receive the temperature data from the temperature sensor and control the heating unit. may include

In addition, the helium supply flow path, the helium main flow path through which the helium is supplied; a helium bypass passage branched from the helium main passage, connected to the main supply passage, and connected to a rear end of the heater module; a helium delivery passage connected to the helium main passage, connected to the main supply passage, merged with the nitrogen supply passage, and connected to a front end of the heater module; and a helium switching valve provided between the helium delivery channel and the helium bypass channel to flow the helium to the helium delivery channel or the helium bypass channel. may include

Also, the helium bypass passage may be connected between the heater module and the micro filter.

In addition, it may further include a carrier gas switching valve provided in the main supply passage, provided between the micro filter and the mass flow meter, for discharging the carrier gas flowing into the main supply passage to the outside.

In addition, the nitrogen supply passage and the helium supply passage may be joined at a carrier gas injection valve.

In addition, the nitrogen supply passage may further include a nitrogen supply valve for opening and closing the nitrogen supply passage.

In addition, the helium supply passage may further include a helium supply valve for opening and closing the helium supply passage.

In addition, the temperature of the nitrogen heated in the heater module may be implemented in a range of 30 °C to 150 °C.

In addition, the heater pipe may be a corrosion-resistant or heat-resistant metal pipe, and a ceramic coating may be formed on the inner circumferential surface.

According to the carrier gas supply apparatus according to an embodiment of the present invention, since nitrogen gas can be used alone or intensively as a carrier gas supplied to the process chamber, expensive helium is not used in the CVD process, thereby reducing the manufacturing cost. be able to

1 is a schematic diagram of a carrier gas supply apparatus and a SACVD process apparatus according to an embodiment of the present invention.
2 is a schematic diagram of a carrier gas supply apparatus according to an embodiment of the present invention;
3 is a schematic diagram of a heater module 40 according to an embodiment of the present invention.
4 is an operation flowchart of a carrier gas supply apparatus according to an embodiment of the present invention.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the technical field to which the present invention pertains It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference numerals in each figure indicate like elements.

1 is a schematic diagram of a carrier gas supply apparatus and a SACVD process apparatus according to an embodiment of the present invention, FIG. 2 is a schematic diagram of a carrier gas supply apparatus according to an embodiment of the present invention, and FIG. 3 is an embodiment of the present invention A schematic diagram of a heater module 40 according to an example.

1 to 3 , a carrier gas supply apparatus according to an embodiment of the present invention is connected to a gas panel G. As shown in FIG.

A gas panel (G) is a device that mixes a carrier gas and a raw material supplied from a carrier gas supply device, and sends it to a process chamber (C). The gas panel G receives the raw material and mixes the carrier gas and the raw material at an injection valve Vi.

At this time, the raw material is vaporized in the injection valve Vi and phase-changed into the gaseous raw material gas. The gaseous source gas is mixed with the carrier gas in the injection valve Vi to form a mixed gas. The mixed gas may flow into the process chamber (C).

The gas panel G may be provided with a liquid flow meter (LFM). The liquid flow meter measures the flow rate of the mixed gas. The liquid flow meter may control the flow rate of the mixed gas flowing into the process chamber (C).

The process chamber C is implemented as a deposition chamber, so that a deposition process may be performed. A SACVD process may be performed in the process chamber C, but embodiments of the deposition process performed thereon are not limited thereto. In the process chamber C, a mixed gas in which a source gas and a carrier gas are mixed may form a thin film on the target substrate.

Here, in the carrier gas supply apparatus according to an embodiment of the present invention, the nitrogen supply passage 10 to which nitrogen is supplied, the helium supply passage 20 to which the nitrogen supply passage 10 is joined and helium is supplied, the The nitrogen supply passage 10 and the helium supply passage 20 are joined, and the main supply passage 30 is connected to the gas panel G to supply the carrier gas to the gas panel G, the main supply passage ( 30) provided in the heater module 40 to heat the nitrogen by heating the main supply passage 30, a micro filter 50 connected to the main supply passage 30 to filter particles, and the main supply passage and a mass flow meter 60 connected to the 30 and connected to the rear end of the micro filter 50 to measure the flow rate of the carrier gas.

Nitrogen (N ₂ ) is supplied to the nitrogen supply passage 10 . Nitrogen may be supplied to the nitrogen supply passage 10 in a gaseous state.

According to an embodiment, a plurality of nitrogen supply passages 10 may be provided. In the case of the present invention, the nitrogen supply passage 10 is implemented as a first nitrogen supply passage 10a, a second nitrogen supply passage 10b, a third nitrogen supply passage 10c, and a fourth nitrogen supply passage 10d. However, the embodiment is not limited thereto. Since the first nitrogen supply passage 10a is the same as the remaining second nitrogen supply passage 10b to the fourth nitrogen supply passage 10d, hereinafter, the first nitrogen supply passage 10a is represented as the nitrogen supply passage 10. to explain

The nitrogen supply passage 10 may further include a nitrogen supply valve 11 for opening and closing the nitrogen supply passage 10 . The nitrogen supply valve 11 is implemented as an on/off valve, and may supply (on) or block (off) nitrogen to the nitrogen supply passage 10 .

Helium (He) is supplied to the helium supply passage 20 . Helium may be supplied to the helium supply passage 20 in a gaseous state.

According to an embodiment, a plurality of helium supply passages 20 may be provided. In the case of the present invention, the helium supply passage 20 is implemented as a first helium supply passage 20a, a second helium supply passage 20b, a third helium supply passage 20c, and a fourth helium supply passage 20d. However, the embodiment is not limited thereto. Since the first helium supply passage 20a is the same as the remaining second helium supply passages 20b to 20d, the first helium supply passage 20a is represented as a helium supply passage 20 hereinafter. to explain

The helium supply passage 20 may further include a helium supply valve 21 for opening and closing the helium supply passage 20 . The helium supply valve 21 is implemented as an on/off valve, and may supply (on) or block (off) helium to the helium supply passage 20 .

The helium supply passage 20 joins the nitrogen supply passage 10 . The helium supply passage 20 and the nitrogen supply passage 10 may form a junction 31 . The merging part 31 is connected to a main supply passage 30 to be described later.

At this time, the combined nitrogen and/or helium may form a carrier gas.

According to an embodiment, when the helium supply valve 21 is turned off and the nitrogen supply valve 11 is turned on, the carrier gas may be nitrogen alone. In addition, when the helium supply valve 21 is turned on and the nitrogen supply valve 11 is turned off, the carrier gas may be helium alone. In addition, when the helium supply valve 21 is turned on and the nitrogen supply valve 11 is turned on, the carrier gas may be a gas in which nitrogen and helium are mixed.

The merging part 31 may be implemented as a branch pipe. In addition, the merging part 31 may be implemented as an injection valve that mixes two types of gases and flows them into one flow path. In this case, the nitrogen supply passage 10 and the helium supply passage 20 may be joined at the carrier gas injection valve. Nitrogen and helium may be mixed in the carrier gas injection valve, and may flow into the main supply passage 30 .

The main supply passage 30 is a combination of the nitrogen supply passage 10 and the helium supply passage 20 . As described above, the main supply passage 30 may be connected to the merging part 31 , and may be connected to a branching part or a carrier gas injection valve. A carrier gas flows in the main supply passage 30 .

According to an embodiment, a plurality of main supply passages 30 may be provided. In the case of the present invention, the main supply passage 30 is implemented as a first main supply passage 30a, a second main supply passage 30b, a third main supply passage 30c, and a fourth main supply passage 30d. However, the embodiment is not limited thereto. Since the first main supply passage 30a is the same as the remaining second main supply passages 30b to 30d, the first main supply passage 30a is represented as the main supply passage 30 hereinafter. to explain

The main supply passage 30 is connected to the gas panel G. The carrier gas flows to the gas panel G through the main supply passage 30 . In this case, the main supply passage 30 supplies the carrier gas to the gas panel G.

The gas panel G is provided with a mixed gas supply passage GL connected to the main supply passage 30 . The mixed gas flows in the mixed gas supply passage GL. The mixed gas supply passage GL is connected to the process chamber C, and the mixed gas flows into the process chamber C.

A plurality of mixed gas supply passages GL may be provided. In this case, the mixed gas supply passage GL corresponds to the first main supply passage 30a, the second main supply passage 30b, the third main supply passage 30c, and the fourth main supply passage 30d, A first mixed gas supply passage GL1 , a second mixed gas supply passage GL2 , a third mixed gas supply passage GL3 , and a fourth mixed gas supply passage GL4 may be provided. Since the first mixed gas supply passage GL1 is the same as the remaining second mixed gas supply passages GL2 to GL4 , the first mixed gas supply passage GL1 is referred to as the mixed gas supply passage. (GL) is represented and described.

An injection valve Vi is provided in the mixed gas supply passage GL. The carrier gas may be mixed with the source gas at the injection valve Vi of the gas panel G to form a mixed gas. The mixed gas may flow into the process chamber (C). The mixed gas flowing into the process chamber C may be deposited in the r process chamber C to form a thin film surface.

The heater module 40 is provided in the main supply passage 30 . A plurality of heater modules 40 may be provided. As described above, when the main supply passage 30 is implemented as the first main supply passage 30a to the fourth main supply passage 30d, the heater module 40 is provided in each main supply passage 30 . can be

The heater module 40 heats the main supply passage 30 . The heater module 40 may heat the carrier gas. In this case, the heater module 40 may heat nitrogen. That is, when the carrier gas is implemented as nitrogen alone or a mixed gas of helium and nitrogen, the heater module 40 may heat nitrogen.

As described in the prior art, nitrogen has a better deposition rate than helium when it is 500° C. or higher, but when it is less than 500° C., nitrogen having a larger molecular weight than helium takes up a lot of heat, so the vaporized raw material gas in the SACVD process is As heat is transferred to nitrogen, the heat is reduced and liquefied again, causing a problem of generating particles on the surface of the thin film and changing the characteristics of the thin film.

In the case of the carrier gas supply apparatus of the present invention, the heater module 40 heats the main supply passage 30 to heat nitrogen flowing in the main supply passage 30 .

When nitrogen is heated, since heat is not transmitted from the raw material gas vaporized in the gas panel G, the raw material gas can maintain a gaseous state, and generation of particles due to liquefaction of the raw material gas is prevented. Accordingly, since the particle generation problem is solved, it is possible to use nitrogen alone or mainly as a carrier gas.

The temperature of nitrogen heated in the heater module 40 may be implemented in a range of 30°C to 150°C. When nitrogen is heated to less than 30° C., it is not sufficiently heated, and heat is transferred from the raw material gas, so that the raw material gas may be liquefied. On the other hand, when nitrogen is heated to more than 150° C., as the nitrogen is overheated and heats the source gas, the source gas is not deposited and an irregular chemical reaction occurs, resulting in a non-uniform surface of the thin film.

Here, the heater module 40 according to an embodiment of the present invention is provided in the heater conduit 41 connected to the main supply conduit 30, and the heater conduit 41, to provide the heater conduit 41. A heating unit 43 for heating, a temperature sensor 45 provided in the heater conduit 41 to detect temperature data of the heater conduit 41, and the temperature sensing sensor 45 and the heating unit ( 43), and includes a temperature controller 47 that receives the temperature data from the temperature sensor 45 and controls the heating unit 43.

The heater conduit 41 is connected to the main supply path 30 . A carrier gas flows through the heater conduit 41 . In this case, nitrogen, helium, a mixed gas of nitrogen and helium may be flowed as the carrier gas.

The heater pipe 41 may be implemented as a corrosion-resistant and/or heat-resistant metal pipe. In this case, the heater conduit 41 may be prevented from corrosion by the carrier gas, and a chemical reaction may not occur due to the high temperature carrier gas.

According to an embodiment, the heater conduit 41 may be made of SUS 316 material. Quartz, ceramic, and sapphire coatings are formed on the inner circumferential surface of the heater conduit 41 to improve heat resistance. In this case, particles are not generated inside the heater conduit 41 .

The heating unit 43 is provided in the heater conduit 41 . The heating part 43 may be provided on the outer surface of the heater conduit 41 .

The heating unit 43 heats the heater pipe 41 . Since the heating unit 43 may be implemented by known techniques such as induction heating, direct heating, and the like, a detailed description thereof will be omitted. In this case, the heating unit 43 may heat the carrier gas flowing in the heater pipe 41 and may heat nitrogen.

The temperature sensor 45 is provided in the heater conduit 41 . The temperature sensor 45 detects the temperature data of the heating unit 43 . The temperature sensor 45 may transmit temperature data to a controller (not shown) or a temperature controller 47 .

The temperature controller 47 is connected to the temperature sensor 45 and the heating unit 43 . The temperature controller 47 may control the heating unit 43 . The temperature controller 47 may receive the temperature data from the temperature sensor 45 to control the heating temperature of the heating unit 43 . In this case, the temperature controller 47 may control the heating unit 43 so that the nitrogen is heated to 30°C to 150°C.

The micro filter 50 is connected to the main supply passage 30 . The micro filter 50 may be connected to the rear end of the heater module 40 . The micro filter 50 filters particles flowing in the main supply passage 30 .

As described above, the carrier gas may be heated in the heater module 40 . At this time, the carrier gas may be heated to generate particles or fine dust. In this case, the micro filter 50 may filter particles or fine dust contained in the carrier gas.

A mass flow meter (MFC) 60 is connected to the main supply passage 30 . The mass flow meter 60 is connected to the micro filter 50 . The mass flow meter 60 may be connected to the rear end of the micro filter 50 .

The mass flow meter 60 measures the flow rate of the carrier gas flowing in the main supply passage 30 . The mass flow meter 60 measures the flow rate of the carrier gas and transmits flow data to the controller.

As described above, in the carrier gas supply device of the present invention, nitrogen is heated in the heater module 40 to prevent particles from being generated on the surface of the thin film. There is no need to use helium.

Here, the helium supply flow path 20 according to an embodiment of the present invention is branched from the helium main flow path 23 to which the helium is supplied, the helium main flow path 23 , and is connected to the main supply flow path 30 . A helium bypass passage 25 connected to the rear end of the heater module 40, connected to the helium main passage 23, connected to the main supply passage 30, and the nitrogen supply passage 10 and a helium delivery passage 27 connected to the front end of the heater module 40 and provided between the helium delivery passage 27 and the helium bypass passage 25 to transfer the helium to the helium and a helium switching valve 29 for flowing into the flow passage 27 or the helium bypass passage 25 .

Helium is supplied to the helium main flow path 23 . A helium supply valve 21 may be provided in the helium main flow path 23 .

The helium bypass flow path 25 is branched from the helium main flow path 23 . The helium bypass passage 25 is connected to the main supply passage 30 . The helium bypass passage 25 forms the main supply passage 30 and the bypass junction 22 . The bypass junction 22 may be implemented as a branch pipe.

The helium bypass passage 25 may be connected to the rear end of the heater module 40 . In this case, since the helium flowing into the helium bypass passage 25 does not pass through the heater module 40 , it is not heated in the heater module 40 . In this case, the heater module 40 may be operated off.

The helium bypass passage 25 may be connected between the heater module 40 and the micro filter 50 . In this case, particles included in the helium flowing through the helium bypass passage 25 may be filtered by the micro filter 50 .

The helium delivery passage 27 is connected to the helium main passage 23 . The helium delivery passage 27 is connected to the main supply passage 30 . The helium delivery passage 27 is joined with the nitrogen supply passage 10 . The helium delivery passage 27 and the nitrogen supply passage 10 may form the above-described junction 31 .

The helium delivery passage 27 is connected to the front end of the heater module 40 . In this case, the helium flowing into the helium delivery passage 27 forms a carrier gas mixed with nitrogen. The carrier gas is heated in the heater module 40 while passing through the heater module 40 .

The helium switching valve 29 is provided between the helium delivery passage 27 and the helium bypass passage 25 . The helium switching valve 29 flows the helium supplied to the helium main flow path 23 into either the helium delivery flow path 27 or the helium bypass flow path 25 . In this case, the helium switching valve 29 may be implemented as a three-way valve.

A carrier gas switching valve 70 may be further provided in the main supply passage 30 . The carrier gas switching valve 70 may be provided between the micro filter 50 and the mass flow meter 60 .

The carrier gas switching valve 70 may flow the carrier gas flowing into the main supply passage 30 to the mass flow meter 60 or may discharge it to the outside. In this case, the carrier gas switching valve 70 may be connected to the external atmosphere or the scrubber O to discharge the carrier gas to the outside.

When the flow rate of the carrier gas flowing in the main supply passage 30 is excessive or the carrier gas is overheated by the heater module 40 , the carrier gas switching valve 70 transmits the carrier gas through the mass flow meter 60 to the gas panel. It can be discharged to the outside without flowing to (G).

The controller (not shown) may control the nitrogen supply valve 11 , the helium supply valve 21 , the heater module 40 , the helium selector valve 29 , and the carrier gas selector valve 70 .

4 is an operation flowchart of a carrier gas supply apparatus according to an embodiment of the present invention.

Referring to FIG. 4 , first, nitrogen is supplied to the nitrogen supply passage 10 to the carrier gas supply device, and helium is supplied to the helium supply passage 20 .

In this case, the user or the controller may select any one of a nitrogen-only mode, a helium-only mode, or a mixed mode in which nitrogen and helium are mixed for the carrier gas.

In the nitrogen-only mode, the helium supply valve 21 is turned off and the nitrogen supply valve 11 is turned on. The controller may turn off the helium supply valve 21 and turn on the nitrogen supply valve 11 .

In this case, nitrogen is exclusively supplied to the main supply passage 30 . At this time, the heater module 40 is turned on. The controller may turn on the heater module 40 . The heater module 40 heats nitrogen as described above. The heated nitrogen flows into the gas panel (G).

In this case, the temperature controller 47 may control the heating unit 43 . The temperature controller 47 may receive the temperature data from the temperature sensor 45 to control the heating temperature of the heating unit 43 . In this case, the temperature controller 47 may control the heating unit 43 so that the nitrogen is heated to 30°C to 150°C.

The heated nitrogen is mixed with the gaseous source gas in the gas panel G to form a mixed gas. At this time, since the nitrogen is heated to prevent the generation of particles as described above, it is possible to use the nitrogen gas alone as the carrier gas.

In the helium-only mode, the helium supply valve 21 is turned on and the nitrogen supply valve 11 is turned off. The controller may turn on the helium supply valve 21 and turn off the nitrogen supply valve 11 .

In this case, the helium switching valve 29 operates. The control unit may operate the helium switching valve 29 .

The helium switching valve 29 flows the helium supplied to the helium main flow path 23 to the helium bypass flow path 25 . The helium bypass flow path 25 is connected to the rear end of the heater module 40 , and the helium flowing into the helium bypass flow path 25 does not pass through the heater module 40 , so it is not heated in the heater module 40 . .

At this time, the heater module 40 may be turned off. The controller may turn off the heater module 40 .

Helium flows into the main supply passage 30 and then flows to the gas panel G, and is mixed with the gaseous source gas in the gas panel G to form a mixed gas.

In the mixing mode, the helium supply valve 21 is turned on and the nitrogen supply valve 11 is turned on. The controller may turn on the helium supply valve 21 and turn on the nitrogen supply valve 11 .

In this case, the helium switching valve 29 flows the helium supplied to the helium main flow path 23 to the helium delivery flow path 27 . The helium delivery passage 27 is connected to the front end of the heater module 40 . In this case, the helium flowing into the helium delivery passage 27 forms a carrier gas mixed with nitrogen. In the mixed carrier gas, nitrogen may be mainly used, and preferably nitrogen may be included in an amount of 60 wt% or more.

At this time, the heater module 40 is turned on. The controller may turn on the heater module 40 . The heater module 40 heats nitrogen contained in the carrier gas. In addition, the temperature controller 47 may control the heating unit 43 .

The heated nitrogen is mixed with the gaseous source gas in the gas panel G to form a mixed gas. At this time, since nitrogen is heated to prevent particle generation as described above, nitrogen gas can be mainly used as a carrier gas.

As described above, according to the carrier supply device according to the present invention, since nitrogen gas can be used alone or intensively as the carrier gas supplied to the gas panel G, high-cost helium is not used, thereby reducing the manufacturing cost. there will be

Above, those of ordinary skill in the art to which the present invention pertains will be able to understand that the present invention may be implemented in other specific forms without changing the technical spirit or essential features thereof. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive.

The scope of the present invention is indicated by the claims described below rather than the above detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention. should be interpreted

10: nitrogen supply passage 20: helium supply passage
30: main supply passage 40: heater module

Claims (2)

a nitrogen supply passage through which nitrogen is supplied; a helium supply passage joining the nitrogen supply passage and supplying helium; a main supply passage in which the nitrogen supply passage and the helium supply passage are joined and connected to a gas panel to supply a carrier gas to the gas panel; a heater module provided in the main supply passage and heating the nitrogen by heating the main supply passage; a micro filter connected to the main supply passage to filter particles; and a mass flow meter connected to the main supply passage and connected to the rear end of the micro filter to measure the flow rate of the carrier gas. including,
The helium supply flow path, The helium main flow path through which the helium is supplied; a helium bypass passage branched from the helium main passage, connected to the main supply passage, and connected to a rear end of the heater module; a helium delivery passage connected to the helium main passage, connected to the main supply passage, merged with the nitrogen supply passage, and connected to a front end of the heater module; and a helium switching valve provided between the helium delivery channel and the helium bypass channel to flow the helium to the helium delivery channel or the helium bypass channel. including,
The helium bypass flow path is a carrier gas supply device connected between the heater module and the micro filter.
The method of claim 1,
The heater module is
a heater pipe connected to the main supply path;
a heating unit provided in the heater conduit to heat the heater conduit;
a temperature sensor provided in the heater conduit to sense temperature data of the heater conduit; and
a temperature controller connected to the temperature sensor and the heating unit to receive the temperature data from the temperature sensor and control the heating unit;
A carrier gas supply comprising a.

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