JPH04187231A - Raw material feeding device - Google Patents
Raw material feeding deviceInfo
- Publication number
- JPH04187231A JPH04187231A JP31290890A JP31290890A JPH04187231A JP H04187231 A JPH04187231 A JP H04187231A JP 31290890 A JP31290890 A JP 31290890A JP 31290890 A JP31290890 A JP 31290890A JP H04187231 A JPH04187231 A JP H04187231A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- supply
- control device
- supply device
- material supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002994 raw material Substances 0.000 title claims abstract description 163
- 239000003085 diluting agent Substances 0.000 claims abstract description 18
- 238000007865 diluting Methods 0.000 claims abstract description 3
- 229920006395 saturated elastomer Polymers 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 20
- 238000001947 vapour-phase growth Methods 0.000 description 14
- 230000012010 growth Effects 0.000 description 12
- 239000012159 carrier gas Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 8
- 239000010409 thin film Substances 0.000 description 5
- 230000005494 condensation Effects 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1415—Reactant delivery systems
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、気相成長装置等に原料を供給するための原料
供給装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a raw material supply device for supplying raw materials to a vapor phase growth apparatus or the like.
（従来の技術）
従来、気相成長装置等に原料を供給する原料供給装置は
、例えば第８図のように恒温槽１００内に注入されてい
る液体１０１により、液体あるいは固体の原料１０２を
入れた容器１０３を一定の温度に保ち、供給、量制御装
置１０４により流量制御されたキャリアガスを容器１０
３に導入し、原料１０２をキャリアガスに同伴して気相
成長装置１０５に供給していた。(Prior Art) Conventionally, a raw material supply device for supplying raw materials to a vapor phase growth apparatus or the like supplies a liquid or solid raw material 102 using a liquid 101 injected into a constant temperature bath 100, for example, as shown in FIG. The container 103 is kept at a constant temperature, and the carrier gas whose flow rate is controlled by the supply and amount control device 104 is supplied to the container 10.
3, and the raw material 102 was supplied to the vapor phase growth apparatus 105 along with the carrier gas.
（発明が解決しようとする課題）
ところで、上記した従来の原料供給装置では、原料がキ
ャリアガス中に飽和しにくいような低蒸気圧の原料、特
に原料が固体の場合などは、安定した原料供給を行うこ
とが困難であるという問題点があった。(Problems to be Solved by the Invention) By the way, in the conventional raw material supply device described above, it is difficult to provide a stable raw material supply when the raw material has a low vapor pressure that is difficult to saturate in the carrier gas, especially when the raw material is solid. There was a problem that it was difficult to carry out.
また、キャリアガス流量が多くなると原料供給量を多く
するためにキャリアガス流量を増加させても、原料ガス
かキャリアガスに飽和しなくなり、原料供給量が増加し
なくなるという問題点もある。Furthermore, when the carrier gas flow rate increases, even if the carrier gas flow rate is increased in order to increase the amount of raw material supplied, there is a problem that the raw material gas is no longer saturated with the carrier gas, and the amount of raw material supplied does not increase.
更に、原料容器が金属等で作成されている場合、原料の
残量がわかりにくいという問題点もある。Furthermore, when the raw material container is made of metal or the like, there is also the problem that it is difficult to determine the remaining amount of raw material.
（課題を解決するための手段）
前記した課題を解決するために第１の本発明は、恒温槽
内で、容器内に収納されている原料を希釈ガスにより希
釈して供給する原料供給装置においで、前記原料を希釈
する前記希釈ガスの流量をＦとした時、
を満足するようにして希釈ガスを流す供給量制御装置を
設けたことを特徴としている。(Means for Solving the Problems) In order to solve the above-mentioned problems, a first aspect of the present invention provides a raw material supply device that dilutes and supplies raw materials stored in a container with a diluent gas in a constant temperature bath. When the flow rate of the diluent gas for diluting the raw material is F, the present invention is characterized in that a supply amount control device is provided to flow the diluent gas so that the following is satisfied.
ただし、ｆ；原料の流量、ＰＯ；原料供給装置から原料
使用場所まで原料を供給する配管の原料供給装置出口の
圧力、Ｐ （Ｔ） ；原料供給装置から原料使用場所
まで原料を供給する配管での温度Ｔにおける原料の蒸気
圧。However, f: the flow rate of the raw material, PO: the pressure at the outlet of the raw material supply device of the piping that supplies raw materials from the raw material supply device to the raw material usage location, P (T): the pressure of the piping that supplies raw materials from the raw material supply device to the raw material usage location. Vapor pressure of the raw material at temperature T.
第２の本発明は、恒温槽内で容器内に収納されている原
料と、この原料を供給する配管を介して接続されている
供給量制御装置が収納されている原料供給装置においで
、前記原料の温度を、前記配管と供給量制御装置の温度
よりも低くなるように制御する温度制御手段を設けたこ
とを特徴としている。The second aspect of the present invention provides a raw material supply device that houses raw materials stored in a container in a constant temperature bath and a supply amount control device connected via piping for supplying the raw materials. The present invention is characterized in that a temperature control means is provided for controlling the temperature of the raw material to be lower than the temperature of the piping and the supply amount control device.
第３の本発明は、恒温槽内で、容器内に収容されている
原料を供給量制御装置を介して供給する原料供給装置に
おいで、１つの恒温槽内に収納した１種の原料に対して
複数の供給量制御装置を並設し、前記各供給量制御装置
を介して前記原料を複数のラインに供給することを特徴
としている。The third aspect of the present invention provides a raw material supply device that supplies raw materials contained in a container through a supply amount control device in a constant temperature bath, and in which one type of raw material stored in one constant temperature bath is The method is characterized in that a plurality of supply rate control devices are arranged in parallel, and the raw material is supplied to the plurality of lines via each of the supply rate control devices.
第４の本発明は、恒温槽内で、容器内に収容されている
原料を供給量制御装置を介して供給する原料供給装置に
おいで、１つの恒温槽内に複数の異なる原料を収納して
前記各原料に対して１つもしくは複数の供給量制御装置
を並設し、各供給量制御装置を介して前記原料を複数の
ラインに供給することを特徴としている。The fourth aspect of the present invention is a raw material supply device that supplies raw materials contained in a container through a supply amount control device in a constant temperature bath, in which a plurality of different raw materials are stored in one constant temperature bath. The method is characterized in that one or more supply rate control devices are arranged in parallel for each of the raw materials, and the raw materials are supplied to a plurality of lines via each supply rate control device.
第５の本発明は、恒温槽内で、容器内に収容されている
原料を希釈して供給する原料供給装置においで、供給し
た原料の量を積算する積算手段を有することを特徴とし
ている。A fifth aspect of the present invention is a raw material supply device that dilutes and supplies raw materials contained in a container in a constant temperature bath, and is characterized by having an integrating means for totalizing the amount of supplied raw materials.
（作用）
本発明によれば、希釈ガスの流量Ｆを、（ただし、ｆ；
原料の流量、Ｐｏ；原料供給装置から原料使用場所まで
原料を供給する配管の原料供給装置出口の圧力、Ｐ （
Ｔ） 、原料供給装置から原料使用場所まで原料を供
給する配管での温度Ｔにおける原料の蒸気圧）
となるようにしたことにより、恒温槽から出たガス中の
原料ガスの蒸気圧が、恒温槽の外側の温度における飽和
蒸気圧より低くなるので、凝縮することなく安定して原
料の供給を行うことができる。(Function) According to the present invention, the flow rate F of the diluent gas (where f;
Flow rate of raw material, Po; Pressure at the outlet of the raw material supply device of the piping that supplies the raw material from the raw material supply device to the place where the raw material is used, P (
T), the vapor pressure of the raw material at the temperature T in the piping that supplies the raw material from the raw material supply device to the place where the raw material is used. Since the pressure is lower than the saturated vapor pressure at the temperature outside the tank, the raw material can be stably supplied without condensation.
また、本発明によれば、温度制御手段によって原料の温
度を、原料を供給する配管と供給量制御装置の温度より
も低くなるように制御することによっで、原料が配管と
供給量制御装置までの間で凝縮するのを防止することが
できる。Further, according to the present invention, the temperature of the raw material is controlled by the temperature control means to be lower than the temperature of the piping for supplying the raw material and the supply rate control device, so that the temperature of the raw material is controlled between the piping and the supply rate control device. It is possible to prevent condensation between
また、第３．第４の本発明は、例えば気相成長装置の原
料供給装置として用いた場合等には多層成長を行わせる
場合、１つの恒温槽から原料供給でき、設置スペース、
自由度、コスト等の面で有利となる。Also, 3rd. The fourth aspect of the present invention is that when performing multilayer growth, for example, when used as a raw material supply device for a vapor phase growth apparatus, the raw material can be supplied from one constant temperature bath, and the installation space is small.
This is advantageous in terms of freedom, cost, etc.
また、第５の本発明は、原料残量の把握が容易となり、
原料供給量が不安定となる前に対処することが可能であ
るから常に安定した原料供給を実現できる。In addition, the fifth invention makes it easy to grasp the remaining amount of raw materials,
Since it is possible to take measures before the raw material supply amount becomes unstable, a stable raw material supply can always be achieved.
（実施例）
以下、本発明を図示の実施例に基づいて詳細に説明する
。 。(Example) Hereinafter, the present invention will be explained in detail based on the illustrated example. .
第１図は、本発明に係る原料供給装置を気相成長装置の
原料供給に適用した場合の構成を示す概略図である。こ
の図に示すように本発明に係る原料供給装置１は、恒温
槽２内に原料（例えばトリメチルインジウム（ＴＭＩ）
）３を収納した容器４と、原料３の供給量を制御する供
給量制御装置（マスフローコントローラ（ＭＦＣ））５
を具備しており、容器４と供給量制御装置５は配管６ａ
を介して接続されている。FIG. 1 is a schematic diagram showing a configuration in which a raw material supply device according to the present invention is applied to supplying raw materials to a vapor growth apparatus. As shown in this figure, the raw material supply device 1 according to the present invention has a raw material (for example, trimethylindium (TMI)) in a constant temperature bath 2.
) 3 and a supply rate control device (mass flow controller (MFC)) 5 that controls the supply rate of the raw material 3.
The container 4 and the supply amount control device 5 are connected to the piping 6a.
connected via.
供給量制御装置５から気相成長装置７に配設される配管
６ｂの供給量制御装置５の恒温槽２内出口には、希釈ガ
ス（例えばＨ２）が供給される配管６ｃが供給量制御装
置８を介して接続されている。気相成長装置７に接続さ
れている配管６ｂには、ＰＨ，とＨ２をそれぞれ原料（
ＴＭＩ）３と希釈ガス（Ｈ２）と共に気相成長装置７内
に供給する配管６ｄ、６ｅが供給量制御装置９．１０を
介して接続されている。At the outlet of the constant temperature chamber 2 of the supply amount control device 5 of the piping 6b disposed from the supply amount control device 5 to the vapor phase growth device 7, a piping 6c to which dilution gas (for example, H2) is supplied is connected to the supply amount control device. 8. A pipe 6b connected to the vapor phase growth apparatus 7 supplies PH and H2 as raw materials (
Pipes 6d and 6e for supplying TMI) 3 and diluent gas (H2) into the vapor phase growth apparatus 7 are connected via a supply amount control device 9.10.
また、配管６ｂには圧力計１１が接続されており、気相
成長装置７に設けた排出管１２には、気相成長装置７内
の排ガスを排出するためのロータリーポンプ１３が接続
されている。尚、圧力計１１は、配管６ｂ内の圧力を推
定できる場合には設けなくても良い。Further, a pressure gauge 11 is connected to the pipe 6b, and a rotary pump 13 for discharging exhaust gas from the vapor growth apparatus 7 is connected to an exhaust pipe 12 provided in the vapor growth apparatus 7. . Note that the pressure gauge 11 may not be provided if the pressure inside the pipe 6b can be estimated.
そしで、気相成長装置７内のサセプタ１４上に載置され
る基板１５番加熱しで、原料供給装置１から原料（ＴＭ
Ｉ）３を、希釈ガス（Ｈ２）およびＰＨ３とＨ２と共に
配管６ｂを通して気相成長装置７内に供給することによ
り、基板１５上に結晶薄膜（ＩｎＰ）が形成される。Then, the substrate No. 15 placed on the susceptor 14 in the vapor phase growth apparatus 7 is heated, and the raw material (TM) is supplied from the raw material supply apparatus 1.
A crystal thin film (InP) is formed on the substrate 15 by supplying I)3 together with the diluent gas (H2) and PH3 and H2 into the vapor phase growth apparatus 7 through the pipe 6b.
この時、原料３の凝縮を防止するために、原料３を希釈
する希釈ガスの流量Ｆは、
（ただし、ｆ；原料の流量、Ｐｏ；原料供給装置１と気
相成長装置７間の原料供給装置１の出口における配管６
ｂ内の圧力、Ｐ （Ｔ） ；原料供給装置１と気相成
長装置７間の配管６ｂ内での温度Ｔにおける原料３の蒸
気圧）
を満足するように供給量制御装置８で調整する。At this time, in order to prevent condensation of the raw material 3, the flow rate F of the diluent gas that dilutes the raw material 3 is (where f: flow rate of the raw material, Po: raw material supply between the raw material supply device 1 and the vapor phase growth device 7). Piping 6 at the outlet of the device 1
The pressure in b is adjusted by the supply amount control device 8 so as to satisfy P (T); the vapor pressure of the raw material 3 at the temperature T in the pipe 6b between the raw material supply device 1 and the vapor growth device 7).
即ち、第１図に示した実施例においで、気相成長装置７
内の圧力を７０ Ｔｏｒｒ、配管６ｂの恒温槽２の出口
付近の圧力を７６Ｔｏｒｒに調整し、容器４内の原料（
ＴＭり３の温度を７８℃、恒温槽２内の供給量制御装置
５の温度を８０℃、これらの装置が配設される部屋の室
温を２０℃に調整しで、原料（ＴＭＩ）３を流量ｆ−１
ｃｃ／ｍｉｎで流す時に希釈ガス（Ｈ２）の流量Ｆは、
以下のように＊められる。That is, in the embodiment shown in FIG.
The pressure inside the container 4 was adjusted to 70 Torr, and the pressure near the outlet of the constant temperature bath 2 of the pipe 6b was adjusted to 76 Torr, and the raw material (
The raw material (TMI) 3 was prepared by adjusting the temperature of the TM filter 3 to 78°C, the temperature of the supply rate control device 5 in the constant temperature bath 2 to 80°C, and the room temperature of the room where these devices are installed to 20°C. Flow rate f-1
The flow rate F of diluent gas (H2) when flowing at cc/min is:
It is marked as follows.
２０℃での原料（ＴＭＩ）３の蒸気圧は約ＩＴ。The vapor pressure of raw material (TMI) 3 at 20°C is approximately IT.
「ｒであり、配管６ｂの恒温槽２の出口付近での原料（
ＴＭＩ）３の蒸気圧をＩ Ｔｏｒｒ以下にするためには
、恒温槽出口の圧力が７６Ｔｏｒｒであるから
の関゛係が成り立つ。"r," and the raw material (
In order to make the vapor pressure of TMI) 3 below I Torr, the pressure at the outlet of the constant temperature chamber is 76 Torr, so the relationship holds true.
（２）式より、 ｄ′ となる。From equation (2), d′ becomes.
、’、（３）式より、この場合の希釈ガス（Ｆ２）の流
量は、７５ｃｃ／ｍｉｎ以上となる。,', From equation (3), the flow rate of the diluent gas (F2) in this case is 75 cc/min or more.
第２図は、本発明に係る原料供給装置１−によって原料
（ＴＭＩ）３を供給した時に気相成長装置７内のサセプ
タ１４上に形成される結晶薄膜（ＩｎＰ）の成長速度と
成長回数の関係を示したものであり、本発明に係る原料
供給装置１では成長回数が増えても従来の原料供給装置
のように成長速度が低下することなく、略一定の成長速
度であった。FIG. 2 shows the growth rate and number of times of growth of a crystal thin film (InP) formed on the susceptor 14 in the vapor phase growth apparatus 7 when the raw material (TMI) 3 is supplied by the raw material supply apparatus 1- according to the present invention. This shows the relationship, and in the raw material supply device 1 according to the present invention, even if the number of growths increased, unlike the conventional raw material supply device, the growth rate did not decrease, and the growth rate remained substantially constant.
尚、この時、原料（ＴＭＩ）３は１． ｃ ｃ ／ ｍ
ｉｎ１希釈ガス（Ｆ２）は１００ｃｃ／ｍｉｎ、配管
６ｄ、６ｅによるＰＨ３とＦ２の供給は２ｏｃ ・ｃ
／ ｍ ｉ ｎと１６／ｍｉｎの各流量で結晶薄膜（
ＩｎＰ）の成長を行った。At this time, the raw material (TMI) 3 is 1. c c / m
In1 dilution gas (F2) is 100cc/min, PH3 and F2 are supplied through piping 6d and 6e at 2oc・c
The crystal thin film (
InP) was grown.
第３図は、本発明の第２実施例に係る原料供給装置を示
す概略図である。FIG. 3 is a schematic diagram showing a raw material supply device according to a second embodiment of the present invention.
本実施例においては、容器４内の原料３に供給量制御袋
Ｗ２１を介してキャリアガス（例えばＦ２）を供給する
配管６ｆを配置すると共に、原料３を気相成長装置（不
図示）に供給する配管６ｂに、供給量制御装置８を介し
て希釈ガス（例えばＦ２）を供給する配管６Ｃを接続し
た構成であり、他の構成は第１図に示した実施例と同様
である。In this embodiment, a pipe 6f for supplying carrier gas (for example, F2) to the raw material 3 in the container 4 via the supply rate control bag W21 is arranged, and the raw material 3 is supplied to a vapor phase growth apparatus (not shown). A pipe 6C for supplying diluent gas (for example, F2) is connected to a pipe 6b for supplying diluent gas (for example, F2) via a supply amount control device 8, and the other configurations are the same as the embodiment shown in FIG.
本実施例においても、原料ガスの流量をｆ１配管６ｂの
恒温槽２の出口付近での温度Ｔにおける蒸気圧をＰ（Ｔ
）、配管６ｆの恒温槽２の出口付近の圧力をＰｏ、配管
６ｆを流れるキャリアガス流量をＦＩ 、６ ｃを流れ
る希釈ガスの流量をＦ２とした時に、キャリアガスと希
釈ガスの流量Ｆ１゜Ｆ２は前記した（１）式から、
を満足するように供給量制御装置２１，８で調整するこ
とにより、原料の凝縮を防止して良好な結晶薄膜を形成
することができる。尚、配管６ｆ。In this embodiment as well, the vapor pressure at the temperature T near the outlet of the thermostatic chamber 2 of the f1 pipe 6b is defined as P(T
), the pressure near the outlet of constant temperature chamber 2 of piping 6f is Po, the flow rate of carrier gas flowing through piping 6f is FI, and the flow rate of diluent gas flowing through 6c is F2, then the flow rates of carrier gas and diluent gas are F1°F2 From equation (1) above, by adjusting the supply amount control devices 21 and 8 so that the following is satisfied, condensation of the raw material can be prevented and a good crystal thin film can be formed. In addition, piping 6f.
６Ｃてそれぞれ供給される希釈ガスとキャリアガスは、
同しガスでもよく、また異なるガスでもよい。The dilution gas and carrier gas supplied at 6C are as follows:
The gases may be the same or different gases.
第４図は、本発明の第３実施例に係る原料供給装置を示
す概略図である。FIG. 4 is a schematic diagram showing a raw material supply device according to a third embodiment of the present invention.
本実施例においては、原料３を収納した容器４と、配管
６ａを介して接続した供給量制御装置５を内部に配設し
た恒温槽２全体の温度制御を行う第１の温度制御装置２
２と、原料３の温度制御を行う第２の温度制御装置２３
と、供給量制御装置５の温度制御を行う第３の温度制御
装置２４と、配管６ａの温度制御を行う第４の温度制御
装置２５を設けた構成であり、他の構成は第１図に示し
た実施例と同様である。尚、原料３の温度は、恒温槽２
の外側の室温よりも高く調整されている。In this embodiment, a first temperature control device 2 controls the temperature of the entire container 4 containing the raw material 3 and a constant temperature bath 2 in which a supply amount control device 5 connected via a pipe 6a is disposed.
2, and a second temperature control device 23 that controls the temperature of the raw material 3.
The configuration includes a third temperature control device 24 that controls the temperature of the supply amount control device 5, and a fourth temperature control device 25 that controls the temperature of the pipe 6a.The other configurations are as shown in FIG. Similar to the example shown. In addition, the temperature of raw material 3 is
temperature is adjusted higher than the outside room temperature.
そしで、第２．３．４の各温度制御装置２３，２４．２
５によって容器４内の原料３の温度を配管６ａ、供給量
制御装置５より低くなるように制御することによっで、
原料３が配管６ａ、供給量制御装置５内で凝縮するのを
防止することができる。Then, each temperature control device 23, 24.2 of No. 2.3.4
5, by controlling the temperature of the raw material 3 in the container 4 to be lower than that of the piping 6a and the supply amount control device 5,
It is possible to prevent the raw material 3 from condensing in the pipe 6a and the supply amount control device 5.
また、前記した実施例では、第２．３．４の温◆
＝ １３−
度制御装置２Ｂ、２４．２５によって原料３、供給量制
御装置５、配管６ａの温度を制御したが、恒温槽２内で
配管６ａ、供給量制御装置５を原料３より恒温槽２内の
温度の高い位置（恒温槽２の種々の条件、及びヒータや
ファン等の配置等によって異なる）に配設することによ
り、原料３、供給量制御装置５、配管６ａの温度制御を
行うことなく、自然に原料３の温度を供給量制御装置５
、配管６ａより低く保つことが可能である。Further, in the above-mentioned embodiment, the temperature of the raw material 3, the supply amount control device 5, and the piping 6a was controlled by the temperature◆=13-degree controllers 2B and 24.25 in No. 2.3.4. By arranging the piping 6a and the supply amount control device 5 at a position in the constant temperature chamber 2 where the temperature is higher than that of the raw material 3 (this varies depending on various conditions of the constant temperature chamber 2 and the arrangement of heaters, fans, etc.), The temperature of the raw material 3 is automatically controlled by the supply rate control device 5 without controlling the temperature of the raw material 3, the supply rate control device 5, and the piping 6a.
, it is possible to keep it lower than the pipe 6a.
第５図、第６図は、それぞれ本発明の第４および第５実
施例に係る原料供給装置を示す概略図である。FIGS. 5 and 6 are schematic diagrams showing raw material supply apparatuses according to fourth and fifth embodiments of the present invention, respectively.
第５図に示した本実施例においては、１つの恒温槽２内
に１種の原料３を収納した１つの容器４と、この容器４
に接続された配管６ａを介して複数の供給量制御装置５
を並設して配置し、各供給量制御装置５から複数のライ
ンに原料３を供給できるようにした構成である。また、
第６図に示した本実施例においては、１つの恒温槽２内
に複数の異なる原料３をそれぞれ収納した各容器４と、
各容器４にそれぞれ接続された配管６ａを介して１つも
しくは複数の供給量制御装置５を並設して設置し、複数
のラインに異なる原料３を供給できるようにした構成で
ある。In the present embodiment shown in FIG.
A plurality of supply amount control devices 5 are connected to each other via piping 6a connected to
are arranged in parallel, and the raw material 3 can be supplied from each supply amount control device 5 to a plurality of lines. Also,
In the present embodiment shown in FIG. 6, each container 4 containing a plurality of different raw materials 3 in one constant temperature bath 2,
One or more supply amount control devices 5 are installed in parallel via piping 6a connected to each container 4, so that different raw materials 3 can be supplied to a plurality of lines.
このように、これらの実施例では、１つの恒温槽２内に
、複数の供給量制御装置や複数の異なる原料３および複
数の供給量制御装置５を設置することにより、スペース
の削減とコストの低減を図ることができる。As described above, in these embodiments, by installing a plurality of supply rate control devices, a plurality of different raw materials 3, and a plurality of supply rate control devices 5 in one thermostatic chamber 2, space can be reduced and costs can be reduced. It is possible to reduce the
第７図は、本発明の第６の実施例に係る原料供給装置を
示す概略図である。FIG. 7 is a schematic diagram showing a raw material supply device according to a sixth embodiment of the present invention.
本実施例においては、恒温槽２内に設置されている供給
制御装置５の流量信号を積算する積算装置１７と、原料
の積算流量もしくは残量を示す表示装置１８が配設され
ている。この積算装置１７により、残量を把握しにくい
容器４内の原料残量を容易に把握することが可能となる
。また、表示装置１８に、原料３の積算流量もしくは残
り量が一定の値になった場合にアラームを発生する機構
を設けることにより、原料３の交換時期を知らせるよう
にすることができる。In this embodiment, an integrating device 17 that integrates the flow rate signal of the supply control device 5 installed in the constant temperature bath 2, and a display device 18 that shows the integrated flow rate or remaining amount of the raw material are provided. This integrating device 17 makes it possible to easily grasp the remaining amount of raw material in the container 4, which is difficult to grasp. Furthermore, by providing the display device 18 with a mechanism that generates an alarm when the cumulative flow rate or remaining amount of the raw material 3 reaches a certain value, it is possible to notify that it is time to replace the raw material 3.
このように、この実施例では、原料３が少なくなり原料
供給量が不安定になる前に原料３を収納した容器４を交
換することが可能になり、常に安定した原料供給を実現
することができる。In this way, in this embodiment, it is possible to replace the container 4 containing the raw material 3 before the raw material 3 becomes low and the raw material supply amount becomes unstable, making it possible to always realize a stable raw material supply. can.
以上、実施例に基づいて具体的に説明したように本発明
によれば、常温で蒸気圧が低い原料を凝縮することなく
安定して供給することができる。As described above in detail based on the embodiments, according to the present invention, raw materials having low vapor pressure at room temperature can be stably supplied without being condensed.
第１図は、本発明に係る原料供給装置を気相成長装置の
原料供給に適用した場合の構成を示す概略図、第２図は
、同原料供給装置によって原料を供給した時に気相成長
装置で形成される結晶薄膜の成長速度と成長回数の関係
を示す図、第３図乃至第７図は、それぞれ本発明の他の
実施例に係る原料□供給装置、を示す概略図、第８図は
、従来の原料供給装置を示す概略図である。
１・・・原料供給装置
２・・・恒温槽
３・・・原料
４・・・容器
５．８，９，１０．２１・・・供給量制御装置６ａ、６
ｂ、６ｃ、６ｄ、６ｅ、’６ｆ−−−配曽７・・・気相
成長装置
１７・・・積算装置
１８・・・表示装置FIG. 1 is a schematic diagram showing the configuration when the raw material supply device according to the present invention is applied to the raw material supply of a vapor phase growth device, and FIG. FIGS. 3 to 7 are a diagram showing the relationship between the growth rate and the number of times of growth of a crystalline thin film formed in 1, and FIG. 1 is a schematic diagram showing a conventional raw material supply device. 1... Raw material supply device 2... Constant temperature bath 3... Raw material 4... Container 5.8, 9, 10.21... Supply amount control device 6a, 6
b, 6c, 6d, 6e, '6f --- Distribution 7... Vapor phase growth device 17... Integration device 18... Display device
Claims (1)
ガスにより希釈して供給する原料供給装置において、前
記原料を希釈する前記希釈ガスの流量をＦとし た時、 Ｆ≧（Ｐｏ／Ｐ〔Ｔ〕−１）ｆ を満足するようにして希釈ガスを流す供給量制御装置を
設けたことを特徴とする原料供給装置。ただし、ｆ；原
料の流量、Ｐｏ；原料供給装置から原料使用場所まで原
料を供給する配管の原料供給装置出口の圧力、Ｐ（Ｔ）
；原料供給装置から原料使用場所まで原料を供給する配
管での温度Ｔにおける原料の蒸気圧。 （２）恒温槽内で、容器内に収納されている原料と、こ
の原料を供給する配管を介して接続されている供給量制
御装置が設置されている原料供給装置において、前記原
料の温度を、前記配管と供給量制御装置の温度よりも低
くなるように制御する温度制御手段を設けたことを特徴
とする原料供給装置。 （３）恒温槽内で、容器内に収納されている原料を供給
量制御装置を介して供給する原料供給装置において、１
つの恒温槽内に収納した１種の原料に対して複数の供給
量制御装置を並設し、前記各供給量制御装置を介して前
記原料を複数のラインに供給することを特徴とする原料
供給装置。（４）恒温槽内で、容器内に収納されている
原料を供給量制御装置を介して供給する原料供給装置に
おいて、１つの恒温槽内に複数の異なる原料を収納して
前記各原料に対して１つもしくは複数の供給量制御装置
を並設し、各供給量制御装置を介して前記原料を複数の
ラインに供給することを特徴とする原料供給装置。 （５）恒温槽内で、容器内に収納されている原料を希釈
して供給する原料供給装置において、供給した原料の量
を積算する積算手段を有することを特徴とする原料供給
装置。[Scope of Claims] (1) In a raw material supply device that dilutes and supplies a raw material stored in a container with a diluent gas in a constant temperature bath, the flow rate of the diluent gas that dilutes the raw material is defined as F. 1. A raw material supply device comprising a supply amount control device for flowing diluent gas such that when F≧(Po/P[T]−1)f is satisfied. However, f: Flow rate of the raw material, Po: Pressure at the outlet of the raw material supply device of the piping that supplies raw materials from the raw material supply device to the place where the raw material is used, P (T)
; Vapor pressure of the raw material at temperature T in the piping that supplies the raw material from the raw material supply device to the place where the raw material is used. (2) In a raw material supply device in which a supply amount control device is installed that is connected to the raw material stored in a container through a pipe that supplies this raw material in a thermostatic chamber, the temperature of the raw material is controlled. . A raw material supply device, characterized in that it is provided with a temperature control means for controlling the temperature to be lower than the temperature of the piping and the supply amount control device. (3) In a raw material supply device that supplies raw materials stored in a container in a constant temperature bath via a supply amount control device, 1
Raw material supply characterized in that a plurality of supply rate control devices are arranged in parallel for one type of raw material stored in one constant temperature bath, and the raw material is supplied to the plurality of lines via each supply rate control device. Device. (4) In a raw material supply device that supplies raw materials stored in a container through a supply amount control device in a thermostatic oven, a plurality of different raw materials are stored in one thermostatic oven and each of the raw materials is A raw material supply device characterized in that one or more supply rate control devices are arranged in parallel, and the raw material is supplied to a plurality of lines via each supply rate control device. (5) A raw material supply device for diluting and supplying raw materials stored in a container in a constant temperature bath, characterized in that the raw material supply device has an integrating means for adding up the amount of supplied raw materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2312908A JP3034944B2 (en) | 1990-11-20 | 1990-11-20 | Raw material supply device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2312908A JP3034944B2 (en) | 1990-11-20 | 1990-11-20 | Raw material supply device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04187231A true JPH04187231A (en) | 1992-07-03 |
| JP3034944B2 JP3034944B2 (en) | 2000-04-17 |
Family
ID=18034906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2312908A Expired - Lifetime JP3034944B2 (en) | 1990-11-20 | 1990-11-20 | Raw material supply device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3034944B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015195312A (en) * | 2014-03-31 | 2015-11-05 | 株式会社ニューフレアテクノロジー | Vapor phase growth device and vapor phase growth method |
| JP2016089240A (en) * | 2014-11-07 | 2016-05-23 | 株式会社ニューフレアテクノロジー | Vapor phase growth apparatus, storage vessel and vapor phase growth method |
-
1990
- 1990-11-20 JP JP2312908A patent/JP3034944B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015195312A (en) * | 2014-03-31 | 2015-11-05 | 株式会社ニューフレアテクノロジー | Vapor phase growth device and vapor phase growth method |
| JP2016089240A (en) * | 2014-11-07 | 2016-05-23 | 株式会社ニューフレアテクノロジー | Vapor phase growth apparatus, storage vessel and vapor phase growth method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3034944B2 (en) | 2000-04-17 |
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