KR102618740B1 - carrier gas supplying apparatus capable of using nitrogen gas only - Google Patents

Abstract

A carrier gas supply device according to an embodiment of the present invention includes a nitrogen supply channel through which nitrogen is supplied; A helium supply channel that joins the nitrogen supply channel and supplies helium; a main supply flow path in which the nitrogen supply flow path and the helium supply flow path join, and is connected to a gas panel to supply a carrier gas to the gas panel; a heater module provided in the main supply passage and heating the nitrogen by heating the main supply passage; A micro filter connected to the main supply passage to filter particles; and a mass flow meter connected to the main supply passage and to a rear end of the micro filter to measure the flow rate of the carrier gas. Includes.

Description

Carrier gas supply apparatus capable of using nitrogen gas only}

The present invention relates to a carrier gas supply device, and to a carrier gas supply device capable of using nitrogen gas alone.

The SACVD (semi atmospheric chemical vapor deposition) process is a process that is carried out at subatmospheric pressure, which is about half of atmospheric pressure, among various CVD processes. Liquid raw materials are instantaneously vaporized in an injector, and the vaporized raw material gas is transferred to a carrier. It is transported as a carrier gas and flows into the process chamber (C). The gaseous raw material gas mixed with the carrier gas deposits various materials such as SiO ₂ on the target substrate within the process chamber C to form a thin film (hereinafter referred to as a “thin film”).

Generally, it is known that helium or nitrogen is used as a carrier gas in the SACVD process. At this time, nitrogen has a better deposition rate than helium, but since nitrogen takes up a lot of heat in the SACVD process, the vaporized raw material gas loses heat and liquefies again, causing particles to be generated on the surface of the thin film. As a result, helium is preferred as the carrier gas and nitrogen is not used.

However, the price of helium has recently risen more than 10 times compared to before, increasing manufacturing costs, so it is necessary to develop a carrier gas supply device that can use nitrogen alone or mainly to replace helium as a carrier gas.

The problem to be solved by the present invention is to provide a carrier gas supply device that can use nitrogen gas alone.

A carrier gas supply device according to an embodiment of the present invention for solving the above problem includes a nitrogen supply channel through which nitrogen is supplied; A helium supply channel that joins the nitrogen supply channel and supplies helium; a main supply flow path in which the nitrogen supply flow path and the helium supply flow path join, and is connected to a gas panel to supply a carrier gas to the gas panel; a heater module provided in the main supply passage and heating the nitrogen by heating the main supply passage; A micro filter connected to the main supply passage to filter particles; and a mass flow meter connected to the main supply passage and to a rear end of the micro filter to measure the flow rate of the carrier gas. Includes.

In addition, the heater module includes a heater pipe connected to the main supply passage; A heating unit provided in the heater pipe to heat the heater pipe; A temperature sensor provided in the heater pipe to detect temperature data of the heater pipe; and a temperature controller connected to the temperature sensor and the heating unit to receive the temperature data from the temperature sensor and control the heating unit. may include.

In addition, the helium supply flow path includes a helium main flow path through which the helium is supplied; a helium bypass flow path branched from the helium main flow path, connected to the main supply flow path, and connected to a rear end of the heater module; A helium delivery passage connected to the helium main passage, connected to the main supply passage, joined with the nitrogen supply passage, and connected to the front end of the heater module; and a helium conversion valve provided between the helium delivery passage and the helium bypass passage to flow the helium into the helium delivery passage or the helium bypass passage. may include.

Additionally, the helium bypass passage may be connected between the heater module and the micro filter.

In addition, it may further include a carrier gas switching valve provided in the main supply passage and between the micro filter and the mass flow meter to discharge the carrier gas flowing into the main supply passage to the outside.

Additionally, the nitrogen supply passage and the helium supply passage may be joined at a carrier gas injection valve.

Additionally, the nitrogen supply passage may be further provided with a nitrogen supply valve that opens and closes the nitrogen supply passage.

Additionally, the helium supply passage may be further provided with a helium supply valve that opens and closes the helium supply passage.

Additionally, the temperature of the nitrogen heated in the heater module may be 30°C to 150°C.

Additionally, the heater pipe may be a corrosion-resistant or heat-resistant metal pipe, and a ceramic coating may be formed on the inner peripheral surface.

According to the carrier gas supply device according to an embodiment of the present invention, nitrogen gas can be used alone or mainly as the carrier gas supplied to the process chamber, thereby eliminating the use of expensive helium in the CVD process and reducing manufacturing costs. It becomes possible.

Figure 1 is a schematic diagram of a carrier gas supply device and a SACVD process device according to an embodiment of the present invention.
Figure 2 is a schematic diagram of a carrier gas supply device according to an embodiment of the present invention.
Figure 3 is a schematic diagram of a heater module 40 according to one embodiment of the present invention.
Figure 4 is a flowchart of the operation of the carrier gas supply device according to an embodiment of the present invention.

The advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various different forms. The present embodiments are merely provided to ensure that the disclosure of the present invention is complete and to be understood by those skilled in the art. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Hereinafter, with reference to the attached drawings, preferred embodiments of the present invention will be described in detail. The same reference numerals in each drawing indicate the same member.

Figure 1 is a schematic diagram of a carrier gas supply device and a SACVD process device according to an embodiment of the present invention, Figure 2 is a schematic diagram of a carrier gas supply device according to an embodiment of the present invention, and Figure 3 is an embodiment of the present invention. This is a schematic diagram of the heater module 40 according to an example.

1 to 3, the carrier gas supply device according to an embodiment of the present invention is connected to the gas panel (G).

The gas panel (G) is a device that mixes the carrier gas supplied from the carrier gas supply device and raw materials and sends it to the process chamber (C). The gas panel (G) receives raw materials and mixes the carrier gas and raw materials at the injection valve (Vi).

At this time, the raw material is vaporized in the injection valve Vi and changes phase into gaseous raw material gas. The gaseous raw material gas is mixed with the carrier gas at the injection valve Vi to form a mixed gas. The mixed gas may flow into the process chamber (C).

The gas panel (G) may be equipped with a liquid flow meter (LFM). Liquid flow meters measure the flow rate of mixed gases. The liquid flow meter can control the flow rate of the mixed gas flowing into the process chamber (C).

The process chamber C may be implemented as a deposition chamber, and a deposition process may be performed. A SACVD process may be performed in the process chamber C, but embodiments of the deposition process performed thereon are not limited. In the process chamber C, a mixed gas containing a raw material gas and a carrier gas can form a thin film on the target substrate.

Here, the carrier gas supply device according to an embodiment of the present invention includes a nitrogen supply passage 10 through which nitrogen is supplied, a helium supply passage 20 that joins the nitrogen supply passage 10 and through which helium is supplied, The nitrogen supply passage 10 and the helium supply passage 20 are joined, and the main supply passage 30 is connected to the gas panel (G) to supply a carrier gas to the gas panel (G), the main supply passage ( A heater module 40 provided in 30 and heating the main supply passage 30 to heat the nitrogen, a micro filter 50 connected to the main supply passage 30 to filter particles, and the main supply passage It is connected to (30) and connected to the rear end of the micro filter (50), and includes a mass flow meter (60) that measures the flow rate of the carrier gas.

Nitrogen (N ₂ ) is supplied to the nitrogen supply passage 10. Nitrogen may be supplied to the nitrogen supply passage 10 in a gaseous state.

Depending on the embodiment, a plurality of nitrogen supply passages 10 may be provided. In the case of the present invention, the nitrogen supply passage 10 is implemented as a first nitrogen supply passage 10a, a second nitrogen supply passage 10b, a third nitrogen supply passage 10c, and a fourth nitrogen supply passage 10d. However, the embodiment is not limited thereto. Since the first nitrogen supply passage (10a) is the same as the remaining second nitrogen supply passages (10b) to fourth nitrogen supply passages (10d), hereinafter, the first nitrogen supply passage (10a) is represented as the nitrogen supply passage (10). This explains.

The nitrogen supply passage 10 may be further provided with a nitrogen supply valve 11 that opens and closes the nitrogen supply passage 10. The nitrogen supply valve 11 is implemented as an on/off valve and can supply (on) or block (off) nitrogen to the nitrogen supply passage 10.

Helium (He) is supplied to the helium supply passage 20. Helium may be supplied to the helium supply passage 20 in a gaseous state.

Depending on the embodiment, a plurality of helium supply channels 20 may be provided. In the case of the present invention, the helium supply passage 20 is implemented as a first helium supply passage 20a, a second helium supply passage 20b, a third helium supply passage 20c, and a fourth helium supply passage 20d. However, the embodiment is not limited thereto. Since the first helium supply passage (20a) is the same as the remaining second helium supply passages (20b) to fourth helium supply passages (20d), hereinafter, the first helium supply passage (20a) is represented as the helium supply passage (20). This explains.

The helium supply passage 20 may be further provided with a helium supply valve 21 that opens and closes the helium supply passage 20. The helium supply valve 21 is implemented as an on/off valve and can supply (on) or block (off) helium to the helium supply passage 20.

The helium supply passage 20 is joined to the nitrogen supply passage 10. The helium supply passage 20 and the nitrogen supply passage 10 may form a confluence portion 31. The confluence portion 31 is connected to the main supply passage 30, which will be described later.

At this time, the combined nitrogen and/or helium may form a carrier gas.

Depending on the embodiment, when the helium supply valve 21 is turned off and the nitrogen supply valve 11 is turned on, the carrier gas may be nitrogen alone. Additionally, when the helium supply valve 21 is turned on and the nitrogen supply valve 11 is turned off, the carrier gas may be helium alone. Additionally, when the helium supply valve 21 is turned on and the nitrogen supply valve 11 is turned on, the carrier gas may be a mixed gas of nitrogen and helium.

The confluence portion 31 may be implemented as a branch pipe. Additionally, the confluence portion 31 may be implemented as an injection valve that mixes two types of gas and flows them into one flow path. In this case, the nitrogen supply passage 10 and the helium supply passage 20 may be joined at the carrier gas injection valve. Nitrogen and helium may be mixed in the carrier gas injection valve and flow into the main supply passage 30.

The main supply passage 30 is joined by the nitrogen supply passage 10 and the helium supply passage 20. As described above, the main supply passage 30 may be connected to the confluence portion 31, a branch portion, or a carrier gas injection valve. Carrier gas flows in the main supply passage 30.

Depending on the embodiment, a plurality of main supply passages 30 may be provided. In the case of the present invention, the main supply channel 30 is implemented as a first main supply channel (30a), a second main supply channel (30b), a third main supply channel (30c), and a fourth main supply channel (30d). However, the embodiment is not limited thereto. Since the first main supply passage (30a) is the same as the remaining second main supply passages (30b) to fourth main supply passages (30d), hereinafter, the first main supply passage (30a) is represented as the main supply passage (30). This explains.

The main supply passage 30 is connected to the gas panel (G). Carrier gas flows to the gas panel (G) through the main supply passage (30). In this case, the main supply passage 30 supplies carrier gas to the gas panel (G).

The gas panel (G) is provided with a mixed gas supply passage (GL) connected to the main supply passage (30). Mixed gas flows in the mixed gas supply passage GL. The mixed gas supply passage GL is connected to the process chamber (C), and the mixed gas flows into the process chamber (C).

A plurality of mixed gas supply passages (GL) may be provided. In this case, the mixed gas supply passage (GL) corresponds to the first main supply passage (30a), the second main supply passage (30b), the third main supply passage (30c), and the fourth main supply passage (30d), A first mixed gas supply passage (GL1), a second mixed gas supply passage (GL2), a third mixed gas supply passage (GL3), and a fourth mixed gas supply passage (GL4) may be provided. Since the first mixed gas supply passage (GL1) is the same as the remaining second mixed gas supply passages (GL2) to fourth mixed gas supply passages (GL4), hereinafter, the first mixed gas supply passage (GL1) is referred to as the mixed gas supply passage. (GL) represents and explains.

An injection valve (Vi) is provided in the mixed gas supply passage (GL). The carrier gas may be mixed with the raw material gas at the injection valve (Vi) of the gas panel (G) to form a mixed gas. The mixed gas may flow into the process chamber (C). The mixed gas flowing into the process chamber (C) may be deposited within the rprocess chamber (C) to form a thin film surface.

The heater module 40 is provided in the main supply passage 30. A plurality of heater modules 40 may be provided. As described above, when the main supply passage 30 is implemented as the first main supply passage 30a to the fourth main supply passage 30d, the heater module 40 is provided in each main supply passage 30. It can be.

The heater module 40 heats the main supply passage 30. The heater module 40 can heat the carrier gas. In this case, the heater module 40 can heat nitrogen. That is, when the carrier gas is nitrogen alone or a mixed gas of helium and nitrogen, the heater module 40 can heat the nitrogen.

As described above in the prior art, nitrogen has a better deposition rate than helium when the temperature is above 500°C, but when it is below 500°C, nitrogen, which has a larger molecular weight than helium, takes up a lot of heat, so the raw material gas vaporized in the SACVD process As heat is transferred to nitrogen, the heat is reduced and liquefied again, causing problems such as particles being generated on the surface of the thin film and changes in the characteristics of the thin film.

In the case of the carrier gas supply device of the present invention, the heater module 40 heats the main supply passage 30 to heat the nitrogen flowing in the main supply passage 30.

When nitrogen is heated, heat is not transferred from the raw material gas vaporized in the gas panel G, so the raw material gas can maintain a gaseous state, thereby preventing the generation of particles due to liquefaction of the raw material gas. Accordingly, the problem of particle generation is solved, and nitrogen can be used alone or primarily as a carrier gas.

The temperature of nitrogen heated in the heater module 40 may be 30°C to 150°C. When nitrogen is heated below 30°C, it is not heated sufficiently and heat is transferred from the raw material gas, which may cause the raw material gas to liquefy. On the other hand, when nitrogen is heated above 150°C, the nitrogen overheats and heats the raw material gas, so the raw material gas may not be deposited and an irregular chemical reaction may occur, resulting in an uneven thin film surface.

Here, the heater module 40 according to an embodiment of the present invention is provided with a heater pipe 41 connected to the main supply passage 30 and the heater pipe 41, A heating unit 43 for heating, a temperature sensor 45 provided in the heater pipe 41 and detecting temperature data of the heater pipe 41, and the temperature detection sensor 45 and the heating unit ( 43) and includes a temperature controller 47 that receives the temperature data from the temperature sensor 45 and controls the heating unit 43.

The heater pipe 41 is connected to the main supply passage 30. Carrier gas flows in the heater pipe 41. In this case, nitrogen, helium, and a mixed gas of nitrogen and helium may flow as the carrier gas.

The heater pipe 41 may be made of corrosion-resistant and/or heat-resistant metal pipe. In this case, the heater pipe 41 is prevented from being corroded by the carrier gas, and a chemical reaction caused by the high-temperature carrier gas may not occur.

Depending on the embodiment, the heater conduit 41 may be made of SUS 316 material. Quartz, ceramic, and sapphire coatings are formed on the inner peripheral surface of the heater pipe 41 to improve heat resistance. In this case, no particles are generated inside the heater pipe 41.

The heating unit 43 is provided in the heater pipe 41. The heating unit 43 may be provided on the outer surface of the heater pipe 41.

The heating unit 43 heats the heater pipe 41. Since the heating unit 43 can be implemented using known technologies such as induction heating and direct heating, detailed description will be omitted. In this case, the heating unit 43 can heat the carrier gas flowing in the heater pipe 41 and heat nitrogen.

The temperature sensor 45 is provided in the heater pipe 41. The temperature sensor 45 detects temperature data of the heating unit 43. The temperature sensor 45 may transmit temperature data to a control unit (not shown) or a temperature controller 47.

The temperature controller 47 is connected to the temperature sensor 45 and the heating unit 43. The temperature controller 47 can control the heating unit 43. The temperature controller 47 can receive temperature data from the temperature sensor 45 and control the heating temperature of the heating unit 43. In this case, the temperature controller 47 can control the heating unit 43 so that the nitrogen is heated to 30°C to 150°C.

The micro filter 50 is connected to the main supply passage 30. The micro filter 50 may be connected to the rear end of the heater module 40. The micro filter 50 filters particles flowing in the main supply passage 30.

As described above, the carrier gas may be heated in the heater module 40. At this time, the carrier gas may be heated to generate particles or fine dust. In this case, the micro filter 50 can filter particles or fine dust contained in the carrier gas.

A mass flow meter (MFC) (60) is connected to the main supply passage (30). The mass flow meter 60 is connected to the micro filter 50. The mass flow meter 60 may be connected to the rear end of the micro filter 50.

The mass flow meter 60 measures the flow rate of the carrier gas flowing in the main supply passage 30. The mass flow meter 60 measures the flow rate of the carrier gas and transmits the flow rate data to the control unit.

As described above, in the carrier gas supply device of the present invention, nitrogen is heated in the heater module 40 to prevent particles from being generated on the surface of the thin film, making it possible to use the carrier gas alone or mainly as nitrogen, thereby reducing the cost of high-cost There is no need to use helium.

Here, the helium supply passage 20 according to an embodiment of the present invention is a helium main passage 23 through which the helium is supplied, branched from the helium main passage 23, and connected to the main supply passage 30. and a helium bypass passage 25 connected to the rear end of the heater module 40, connected to the helium main passage 23, connected to the main supply passage 30, and the nitrogen supply passage 10. A helium delivery passage 27 is joined and connected to the front end of the heater module 40, and is provided between the helium delivery passage 27 and the helium bypass passage 25 to transmit the helium. It includes a helium conversion valve (29) that allows the helium to flow into the flow path (27) or the helium bypass flow path (25).

Helium is supplied to the helium main flow path 23. The helium main flow path 23 may be provided with a helium supply valve 21.

The helium bypass flow path (25) branches off from the helium main flow path (23). The helium bypass passage 25 is connected to the main supply passage 30. The helium bypass passage 25 forms a main supply passage 30 and a bypass confluence portion 22. The bypass confluence 22 may be implemented as a branch pipe.

The helium bypass passage 25 may be connected to the rear end of the heater module 40. In this case, the helium flowing into the helium bypass passage 25 does not pass through the heater module 40 and is therefore not heated in the heater module 40. In this case, the heater module 40 may be operated off.

The helium bypass passage 25 may be connected between the heater module 40 and the micro filter 50. In this case, particles contained in helium flowing through the helium bypass passage 25 may be filtered by the micro filter 50.

The helium delivery passage 27 is connected to the helium main passage 23. The helium delivery passage 27 is connected to the main supply passage 30. The helium delivery passage 27 joins the nitrogen supply passage 10. The helium delivery passage 27 and the nitrogen supply passage 10 may form the above-described confluence portion 31.

The helium delivery passage 27 is connected to the front end of the heater module 40. In this case, helium flowing into the helium transfer passage 27 forms a carrier gas mixed with nitrogen. The carrier gas passes through the heater module 40 and is heated in the heater module 40.

The helium conversion valve (29) is provided between the helium delivery passage (27) and the helium bypass passage (25). The helium conversion valve 29 flows the helium supplied to the helium main flow path 23 to either the helium delivery flow path 27 or the helium bypass flow path 25. In this case, the helium conversion valve 29 may be implemented as a 3-way valve.

A carrier gas switching valve 70 may be further provided in the main supply passage 30. The carrier gas switching valve 70 may be provided between the micro filter 50 and the mass flow meter 60.

The carrier gas switching valve 70 can flow the carrier gas flowing into the main supply passage 30 to the mass flow meter 60 or discharge it to the outside. In this case, the carrier gas switching valve 70 is connected to the external atmosphere or scrubber (O) and can discharge the carrier gas to the outside.

When the flow rate of the carrier gas flowing in the main supply passage 30 is excessive or the carrier gas is overheated by the heater module 40, the carrier gas switching valve 70 transfers the carrier gas to the gas panel through the mass flow meter 60. It can be discharged to the outside without flowing to (G).

The control unit (not shown) can control the above-described nitrogen supply valve 11, helium supply valve 21, heater module 40, helium conversion valve 29, and carrier gas conversion valve 70.

Figure 4 is a flowchart of the operation of a carrier gas supply device according to an embodiment of the present invention.

Referring to FIG. 4, first, nitrogen is supplied to the nitrogen supply passage 10 of the carrier gas supply device, and helium is supplied to the helium supply passage 20.

At this time, the user or the controller can select the carrier gas from among nitrogen-only mode, helium-only mode, or a mixed mode where nitrogen and helium are mixed.

In nitrogen only mode, the helium supply valve 21 is turned off and the nitrogen supply valve 11 is turned on. The control unit may turn off the helium supply valve 21 and turn on the nitrogen supply valve 11.

In this case, nitrogen is supplied alone to the main supply passage 30. At this time, the heater module 40 is turned on. The control unit can turn on the heater module 40. The heater module 40 heats nitrogen as described above. Heated nitrogen flows to the gas panel (G).

At this time, the temperature controller 47 can control the heating unit 43. The temperature controller 47 can receive temperature data from the temperature sensor 45 and control the heating temperature of the heating unit 43. In this case, the temperature controller 47 can control the heating unit 43 so that the nitrogen is heated to 30°C to 150°C.

Heated nitrogen is mixed with gaseous raw material gas in the gas panel (G) to form a mixed gas. At this time, nitrogen is heated and particle generation is prevented as described above, so it becomes possible to use nitrogen gas alone as a carrier gas.

In helium only mode, the helium supply valve 21 is turned on and the nitrogen supply valve 11 is turned off. The control unit may turn on the helium supply valve 21 and turn off the nitrogen supply valve 11.

In this case, the helium switching valve 29 operates. The control unit can operate the helium conversion valve (29).

The helium conversion valve (29) flows the helium supplied to the helium main flow path (23) into the helium bypass flow path (25). The helium bypass passage 25 is connected to the rear end of the heater module 40, and since the helium flowing into the helium bypass passage 25 does not pass through the heater module 40, it is not heated in the heater module 40. .

At this time, the heater module 40 may be operated off. The control unit may turn off the heater module 40.

Helium flows into the main supply passage 30 and then flows to the gas panel (G), where it is mixed with gaseous raw material gas to form a mixed gas.

In mixed mode, the helium supply valve 21 is turned on and the nitrogen supply valve 11 is turned on. The control unit may turn on the helium supply valve 21 and the nitrogen supply valve 11.

In this case, the helium conversion valve 29 flows the helium supplied to the helium main passage 23 into the helium delivery passage 27. The helium delivery passage 27 is connected to the front end of the heater module 40. In this case, helium flowing into the helium transfer passage 27 forms a carrier gas mixed with nitrogen. In the mixed carrier gas, nitrogen may be used primarily, and preferably nitrogen may be included in an amount of 60% by weight or more.

At this time, the heater module 40 is turned on. The control unit may turn on the heater module 40. The heater module 40 heats nitrogen contained in the carrier gas. Additionally, the temperature controller 47 can control the heating unit 43.

Heated nitrogen is mixed with gaseous raw material gas in the gas panel (G) to form a mixed gas. At this time, nitrogen is heated and particle generation is prevented as described above, so nitrogen gas can be mainly used as the carrier gas.

As described above, according to the carrier supply device according to the present invention, nitrogen gas can be used singly or mainly as the carrier gas supplied to the gas panel (G), thereby eliminating the use of expensive helium, thereby reducing manufacturing costs. There will be.

As mentioned above, those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing its technical idea or essential features. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive.

The scope of the present invention is indicated by the scope of the claims described below rather than the detailed description above, and all changes or modified forms derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention. must be interpreted.

10: nitrogen supply channel 20: helium supply channel
30: Main supply passage 40: Heater module

Claims (2)

A nitrogen supply channel through which nitrogen is supplied; A helium supply channel that joins the nitrogen supply channel and supplies helium; a main supply flow path in which the nitrogen supply flow path and the helium supply flow path join, and is connected to a gas panel to supply a carrier gas to the gas panel; a heater module provided in the main supply passage and heating the nitrogen by heating the main supply passage; A micro filter connected to the main supply passage to filter particles; a mass flow meter connected to the main supply flow path and connected to a rear end of the micro filter to measure the flow rate of the carrier gas; A carrier gas switching valve provided in the main supply passage and between the micro filter and the mass flow meter to discharge the carrier gas flowing into the main supply passage to the outside; a nitrogen supply valve provided in the nitrogen supply passage to open and close the nitrogen supply passage; And a helium supply valve provided in the helium supply passage to open and close the helium supply passage. Including,
The helium supply passage includes a helium main passage through which the helium is supplied; a helium bypass flow path branched from the helium main flow path, connected to the main supply flow path, and connected to a rear end of the heater module; A helium delivery passage connected to the helium main passage, connected to the main supply passage, joined with the nitrogen supply passage, and connected to the front end of the heater module; and a helium conversion valve provided between the helium delivery passage and the helium bypass passage to flow the helium into the helium delivery passage or the helium bypass passage. Including,
The helium bypass flow path is a carrier gas supply device connected between the heater module and the micro filter.
According to paragraph 1,
In helium only mode, the helium supply valve is turned on and the nitrogen supply valve is turned off,
The helium switching valve flows the helium supplied to the helium main flow path to the helium bypass flow path,
A carrier gas supply device in which the helium flowing into the helium bypass passage does not pass through the heater module.

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