KR20220124700A - 반도체 장치 및 반도체 장치의 제작 방법 - Google Patents

반도체 장치 및 반도체 장치의 제작 방법 Download PDF

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KR20220124700A
KR20220124700A KR1020227022508A KR20227022508A KR20220124700A KR 20220124700 A KR20220124700 A KR 20220124700A KR 1020227022508 A KR1020227022508 A KR 1020227022508A KR 20227022508 A KR20227022508 A KR 20227022508A KR 20220124700 A KR20220124700 A KR 20220124700A
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insulator
oxide
conductor
region
film
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Korean (ko)
Inventor
슌페이 야마자키
šœ페이 야마자키
신야 사사가와
료타 호도
도모아키 모리와카
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20220124700A publication Critical patent/KR20220124700A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H01L29/66969—
    • H01L21/02565—
    • H01L21/0262—
    • H01L27/10873—
    • H01L29/78606—
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
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    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
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    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
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    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
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    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
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    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Noodles (AREA)
  • Bipolar Transistors (AREA)
KR1020227022508A 2020-01-10 2020-12-28 반도체 장치 및 반도체 장치의 제작 방법 Pending KR20220124700A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-002997 2020-01-10
JP2020002997 2020-01-10
PCT/IB2020/062468 WO2021140407A1 (ja) 2020-01-10 2020-12-28 半導体装置、および半導体装置の作製方法

Publications (1)

Publication Number Publication Date
KR20220124700A true KR20220124700A (ko) 2022-09-14

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KR1020227022508A Pending KR20220124700A (ko) 2020-01-10 2020-12-28 반도체 장치 및 반도체 장치의 제작 방법

Country Status (5)

Country Link
US (1) US20230027402A1 (https=)
JP (2) JP7640472B2 (https=)
KR (1) KR20220124700A (https=)
CN (1) CN114930547A (https=)
WO (1) WO2021140407A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11929436B2 (en) 2021-02-02 2024-03-12 Taiwan Semiconductor Manufacturing Company Limited Thin transistor including a hydrogen-blocking dielectric barrier and methods for forming the same
US11856751B2 (en) * 2021-03-12 2023-12-26 Taiwan Semiconductor Manufacturing Company Limited Drain sharing for memory cell thin film access transistors and methods for forming the same
US12133396B2 (en) * 2021-08-30 2024-10-29 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device, integrated circuit and method of manufacturing the same
US12218252B2 (en) * 2021-08-30 2025-02-04 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure with source and drain electrode embedded within semiconductor layer and manufacturing method thereof
CN120188582A (zh) * 2022-10-21 2025-06-20 株式会社半导体能源研究所 半导体装置及存储装置
CN119159015B (zh) * 2024-11-20 2025-06-27 江苏爱矽半导体科技有限公司 一种半导体封装机

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151383A (ja) 2009-12-25 2011-08-04 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012257187A (ja) 2010-08-06 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体集積回路

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09139508A (ja) * 1995-11-10 1997-05-27 Toyota Motor Corp 薄膜トランジスタの製造方法
US7419858B2 (en) * 2006-08-31 2008-09-02 Sharp Laboratories Of America, Inc. Recessed-gate thin-film transistor with self-aligned lightly doped drain
US9276125B2 (en) * 2013-03-01 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI664731B (zh) * 2013-05-20 2019-07-01 半導體能源研究所股份有限公司 半導體裝置
US9647125B2 (en) * 2013-05-20 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9343579B2 (en) * 2013-05-20 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20170096956A (ko) * 2016-02-17 2017-08-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 기기
KR20240135882A (ko) * 2018-02-28 2024-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151383A (ja) 2009-12-25 2011-08-04 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012257187A (ja) 2010-08-06 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体集積回路

Also Published As

Publication number Publication date
WO2021140407A1 (ja) 2021-07-15
US20230027402A1 (en) 2023-01-26
JP2025071240A (ja) 2025-05-02
CN114930547A (zh) 2022-08-19
JPWO2021140407A1 (https=) 2021-07-15
JP7640472B2 (ja) 2025-03-05

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