KR20220055234A - Substrate polishing process temperature control module and substrate polshing device including the same - Google Patents

Abstract

According to one embodiment, a substrate polishing process temperature control module comprises: a slurry injection unit positioned in an upper portion of a polishing pad for polishing a substrate and injecting slurry to an upper surface of the polishing pad; a temperature control unit provided to the slurry injection unit and controlling temperature of the slurry; and a control unit controlling the temperature control unit to control temperature of a polishing process with respect to a substrate through temperature control of the slurry injected from the slurry injection unit.

Description

SUBSTRATE POLISHING PROCESS TEMPERATURE CONTROL MODULE AND SUBSTRATE POLSHING DEVICE INCLUDING THE SAME

The following embodiment relates to a substrate polishing process temperature control module and a substrate polishing apparatus including the same.

BACKGROUND ART In manufacturing a semiconductor device, a CMP (chemical mechanical polishing) operation including polishing, buffing, and cleaning is required. A semiconductor device has a multilayer structure, and a transistor device having a diffusion region is formed on a substrate layer. In the substrate layer, connecting metal lines are patterned and electrically connected to the transistor elements forming the functional elements. As is known, a patterned conductive layer is insulated from other conductive layers with an insulating material such as silicon dioxide. As more metal layers and associated insulating layers are formed, the need to flatten the insulating material increases. Without flattening, the production of additional metal layers becomes substantially more difficult because of the many variations in surface morphology. In addition, the metal line pattern is formed of an insulating material, so that the metal CMP operation removes the excess metal.

The CMP process includes a polishing process for planarizing the surface of a substrate by physically abrading it. The polishing process is performed in such a way that the substrate is physically abraded by rubbing the polishing pad having a groove formed on the surface thereof. The degree of polishing of the surface of the substrate may vary depending on the condition of the polishing pad. In order to improve the level of polishing of the substrate, it is required to maintain the condition of the polishing pad according to a target profile. In order to increase productivity and secure process stability in the polishing process, temperature control of the process is required, and in particular, it is required to adjust the temperature of the polishing pad to a target temperature. Conventionally, a method of having a device in direct contact with the polishing pad and flowing a fluid in the device has been used, but this method increases the complexity of the device and causes the entire polishing process to be stopped if a problem occurs in the device did. Accordingly, there is a need for a technology capable of improving process stability while simply controlling the temperature of the polishing pad.

The above-mentioned background art is possessed or acquired by the inventor in the process of deriving the disclosure of the present application, and it cannot necessarily be said to be a known technology disclosed to the general public prior to the present application.

An object of the embodiment is to provide a substrate polishing process temperature control module capable of adjusting the temperature of the polishing process to an optimal range in the polishing process of the substrate, and a substrate polishing apparatus including the same.

An object of the embodiment is to provide a substrate polishing process temperature control module that simplifies the complexity of the apparatus by controlling the temperature of the polishing pad through non-contact heating, and a substrate polishing apparatus including the same.

A substrate polishing process temperature control module according to an embodiment includes: a slurry spraying unit positioned on an upper portion of a polishing pad for polishing a substrate and configured to spray a slurry onto an upper surface of the polishing pad; a temperature control unit provided in the slurry spraying unit and controlling the temperature of the slurry; and a controller for controlling the temperature controller so that the temperature of the polishing process for the substrate is controlled through temperature control of the slurry sprayed from the slurry spraying unit.

It may further include a position adjusting unit for adjusting the position of the slurry spraying unit.

The control unit may control the position control unit according to the process recipe to adjust the position at which the slurry is sprayed.

It may further include a temperature detection unit for detecting the temperature of the polishing pad.

The controller may feedback-control the operation of the temperature controller or the position controller based on the temperature detected by the temperature detector.

The controller may control the polishing of the substrate to be performed after the temperature of the polishing pad reaches a set temperature.

The controller may control the operation of the temperature controller or the position controller so that the temperature of the polishing pad is positioned within a set range while the polishing of the substrate is being performed.

The control unit may stop the operation of the temperature control unit after the polishing of the substrate is finished until another substrate is placed on the polishing pad.

According to an embodiment, an apparatus for polishing a substrate includes: a polishing unit including a polishing platen that rotates and a polishing pad provided on the polishing platen; a polishing carrier holding the substrate and contacting the substrate to the polishing pad; and a temperature control module configured to control the temperature of the polishing pad by adjusting the temperature of the slurry supplied to the polishing pad.

The temperature control module may include: a slurry spraying unit disposed on the polishing pad and configured to spray a slurry onto an upper surface of the polishing pad; and a temperature control unit provided in the slurry spraying unit and controlling the temperature of the slurry.

The substrate polishing process temperature control module and the substrate polishing apparatus including the same according to an embodiment may adjust the temperature of the polishing process to an optimal range during the polishing of a substrate.

The substrate polishing process temperature control module and the substrate polishing apparatus including the same according to an embodiment may simplify the complexity of the apparatus by controlling the temperature of the polishing pad through non-contact heating.

Effects of the substrate polishing process temperature control module and the substrate polishing apparatus including the same according to an embodiment are not limited to those mentioned above, and other effects not mentioned may be clearly understood by those skilled in the art from the following description. There will be.

1 is a perspective view of a substrate polishing apparatus according to an embodiment.
2 is a block diagram of the temperature control module 13 according to an embodiment.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. However, since various changes may be made to the embodiments, the scope of the patent application is not limited or limited by these embodiments. It should be understood that all modifications, equivalents and substitutes for the embodiments are included in the scope of the rights.

The terms used in the examples are used for the purpose of description only, and should not be construed as limiting. The singular expression includes the plural expression unless the context clearly dictates otherwise. In the present specification, terms such as "comprise" or "have" are intended to designate that a feature, number, step, operation, component, part, or combination thereof described in the specification exists, but one or more other features It should be understood that this does not preclude the existence or addition of numbers, steps, operations, components, parts, or combinations thereof.

Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the embodiment belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and should not be interpreted in an ideal or excessively formal meaning unless explicitly defined in the present application. does not

In addition, in the description with reference to the accompanying drawings, the same components are given the same reference numerals regardless of the reference numerals, and the overlapping description thereof will be omitted. In describing the embodiment, if it is determined that a detailed description of a related known technology may unnecessarily obscure the gist of the embodiment, the detailed description thereof will be omitted.

In addition, in describing the components of the embodiment, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only for distinguishing the elements from other elements, and the essence, order, or order of the elements are not limited by the terms. When it is described that a component is “connected”, “coupled” or “connected” to another component, the component may be directly connected or connected to the other component, but another component is between each component. It will be understood that may also be "connected", "coupled" or "connected".

Components included in one embodiment and components having a common function will be described using the same names in other embodiments. Unless otherwise stated, descriptions described in one embodiment may be applied to other embodiments as well, and detailed descriptions within the overlapping range will be omitted.

1 is a perspective view of a substrate polishing apparatus according to an embodiment.

Referring to FIG. 1 , a substrate polishing apparatus 1 according to an exemplary embodiment may be used in a chemical mechanical planarization (CMP) process for polishing a surface of a substrate. The substrate to be polished by the substrate polishing apparatus 1 may be a silicon wafer for manufacturing a semiconductor device. However, the type of the substrate is not limited thereto. For example, the substrate may include glass for a liquid crystal display (LCD) or a plasma display device (FPD). Although it is illustrated in the drawings that the substrate has a circular shape, this is merely an example for convenience of description, and the shape of the substrate is not limited thereto.

The substrate polishing apparatus 1 may control a process temperature in real time while performing a substrate polishing process. The substrate polishing apparatus 1 may set the temperature of the substrate polishing process so as to secure the optimum degree of polishing of the substrate according to the set profile, and may control the process temperature in real time so that the polishing of the substrate is performed at the set temperature.

The substrate polishing apparatus 1 may include a polishing unit 11 , a polishing carrier 12 , and a temperature control module 13 .

The polishing unit 11 may polish the surface to be polished of the substrate. The polishing unit 11 may include a polishing platen 112 and a polishing pad 111 provided on the polishing platen 112 .

The abrasive platen 112 may rotate about an axis perpendicular to the ground. As the polishing platen 112 rotates, the polishing pad 111 may rotate about a central axis. In a state in which the substrate is in contact with the polishing pad 111 , the polishing pad 111 may rotate with respect to the substrate to polish the substrate. The abrasive platen 112 may move up and down with respect to the ground. By the lifting operation of the polishing platen 112 , the position of the polishing pad 111 with respect to the ground may be adjusted.

The polishing pad 111 may contact the surface to be polished of the substrate and physically wear the surface of the substrate through movement relative to the substrate. The polishing pad 111 may include a material having a relatively high hardness with respect to the substrate, since it is necessary to secure planarity and uniformity of the surface of the substrate. For example, the polishing pad 111 may include a polyurethane polymer. However, the above-described material is only an example, and the material of the polishing pad 111 is not limited thereto.

The polishing pad 111 may have a larger area than the polishing target substrate. As will be described later, the polishing of the substrate may be performed on the upper portion of the polishing pad 111 , and temperature control may be performed through the temperature control module 13 .

The abrasive carrier 12 is capable of holding a substrate. The polishing carrier 12 may place the gripped substrate in the polishing area on top of the polishing pad 111 . The polishing carrier 12 may perform polishing according to friction between the polishing pad 111 and the substrate by bringing the substrate into contact with the portion of the polishing pad 111 located in the polishing area. The abrasive carrier 12 may include a carrier head, a retaining ring, and a membrane.

The carrier head may adjust the position of the substrate. The carrier head may receive power from the outside and may rotate about an axis perpendicular to the surface of the polishing pad 111 . The axis of rotation of the carrier head may pass through the center of the gripped substrate. Accordingly, according to the rotation of the carrier head, the gripped substrate may rotate about an axis passing through the center.

The carrier head may move the substrate on a plane parallel to the surface of the polishing pad 111 . For example, the carrier head may translate in a first direction parallel to the surface of the polishing pad 111 and a second direction perpendicular to the first direction. By the combined movement of the carrier head in the first direction and the second direction, the polishing position of the substrate on the polishing pad 111 can be adjusted. In addition, according to the horizontal movement of the carrier head, the substrate may be transferred to or removed from the polishing area on the upper portion of the polishing pad 111 .

The carrier head may be lifted with respect to the polishing pad 111 . Accordingly, the carrier head may move up and down for chucking/de-chucking the substrate or may press the gripped substrate in the direction of the polishing pad 111 .

The retaining ring may be coupled to the carrier head to surround a perimeter of a substrate gripped by the carrier head. The retaining ring may prevent the substrate from disengaging from the gripped position. For example, the retaining ring may support the side surface of the substrate so that the substrate does not disengage from a gripping position on the carrier head due to an impact generated during polishing of the substrate.

The membrane is connected to the carrier head and may form a pressure chamber for applying pressure to the gripped substrate. According to the pressure fluctuation of the pressure chamber formed by the membrane, the pressure applied to each part of the substrate may be adjusted. For example, while the substrate is in contact with the polishing pad 111 , as the pressure in the pressure chamber increases, the substrate may be more strongly pressed against the polishing pad 111 .

2 is a block diagram of the temperature control module 13 according to an embodiment.

1 and 2 , the temperature control module 13 may control the temperature of the polishing process. Specifically, the temperature control module 13 may control the temperature of the polishing pad 111 and also the temperature of the polishing process in a non-contact manner by supplying a heated or cooled fluid onto the polishing pad 111 . In particular, since the temperature control module 13 is provided integrally with the slurry spraying unit, the apparatus can be simplified without separately occupying a space above the polishing pad 111 .

The temperature control module 13 may include a slurry spray unit 131 , a temperature control unit 132 , a position control unit 133 , a temperature detection unit 134 , and a control unit 135 .

The slurry spraying unit 131 may be configured to spray the slurry on the upper surface of the polishing pad 111 . That is, the slurry may be sprayed through the slurry spraying unit 131 . The slurry spraying unit 131 may be positioned on the polishing pad 111 . For example, the slurry spraying unit 131 may include a slurry spraying arm supported on the outside of the polishing pad 111 .

The temperature control unit 132 may be provided in the slurry spraying unit 131 to adjust the temperature of the slurry. The temperature controller 132 may heat or cool the slurry. For example, the temperature controller 132 may include a PTC element.

The position adjusting unit 133 may adjust the position of the slurry spraying unit 131 . That is, the position adjusting unit 133 may adjust the position at which the slurry is sprayed. For example, the position adjusting unit 133 may include a motor and the like to rotate the slurry spraying arm of the slurry spraying unit 131 .

The temperature detector 134 may detect the temperature of the polishing pad 111 . The temperature detection unit 134 may detect the temperature of the polishing pad 111 in real time and transmit it to the control unit 135 . The temperature detector 134 may directly detect the temperature of the substrate.

The controller 135 may control the temperature controller 132 . The controller 135 may control the temperature controller 132 to adjust the temperature of the slurry sprayed from the slurry spraying unit 131 . The slurry sprayed from the slurry spraying unit 131 may exchange thermal energy with the polishing pad 111 while contacting the upper surface of the polishing pad 111 . That is, the controller 135 may control the temperature of the polishing pad 111 and furthermore the process temperature by controlling the temperature of the slurry. Since the slurry is evenly spread over the entire area of the polishing pad 111 by rotation of the polishing pad 111 , the temperature of the polishing pad 111 may be uniformly formed.

The control unit 135 may control the position control unit 133 . The controller 135 may control the position adjusting unit 133 according to the process recipe to adjust the position at which the slurry is sprayed. That is, by controlling the position at which the slurry is dropped according to the process recipe, it is possible to implement various process recipes or set various temperature ranges.

The controller 135 may feedback-control the operation of the temperature controller 132 and/or the position controller 133 in real time based on the temperature detected by the temperature detector 134 . For example, the controller 135 may control the operation of the temperature controller 132 and/or the position controller 133 so that the temperature of the polishing pad 111 is located within a set range.

The controller 135 may control the operation of the temperature controller 132 and/or the position controller 133 according to a set process. For example, the control unit 135 may control the operation of the temperature control unit 132 and/or the position control unit 133 in different ways depending on the position of the substrate, whether the polishing process is performed, and whether the polishing of the substrate is completed. can

Specifically, when the substrate is positioned at the polishing position on the polishing pad 111 , the control unit 135 operates the temperature control unit 132 and/or the position control unit 133 to heat the polishing pad 111 to a set temperature. can be controlled. In this case, the set temperature may be within a range of 80 degrees from room temperature. In this case, the controller 135 may control the entire polishing process so that the polishing of the substrate is performed after the temperature of the polishing pad 111 reaches a set temperature.

Thereafter, during the polishing of the substrate, the controller 135 controls the temperature controller 132 and/or the temperature controller 135 to maintain the temperature of the polishing pad 111 within a predetermined range based on the result detected by the temperature detector 134 . The operation of the position adjusting unit 133 may be controlled. For example, when the temperature of the polishing pad 111 is detected to be above the set range, the controller 135 controls the temperature controller 132 to lower the temperature of the slurry, and the temperature of the polishing pad 111 is set. When it is detected below the range, the controller 135 may control the temperature controller 132 to increase the temperature of the slurry.

When the polishing of the substrate is finished, the control unit 135 may stop the operation of the temperature control unit 132 until the substrate is removed from the polishing position and a new substrate is placed. Accordingly, unnecessary power consumption may be prevented by the operation of the temperature controller 132 . Thereafter, when a new substrate is placed at a polishing position on the polishing pad 111 , the controller 135 may maintain polishing uniformity by repeating the above-described process.

Meanwhile, the controller 135 may control the temperature of the polishing pad 111 by controlling the amount of the slurry being sprayed. In addition, although it has been described herein that the temperature of the polishing pad is controlled by controlling the temperature of the slurry, it may be possible to control the temperature of the polishing pad by temperature controlling and spraying a separate fluid such as ultrapure water other than the slurry.

As described above, although the embodiments have been described with reference to the limited drawings, those skilled in the art may apply various technical modifications and variations based on the above. For example, the described techniques are performed in an order different from the described method, and/or the described components of the system, structure, apparatus, circuit, etc. are combined or combined in a different form than the described method, or other components Or substituted or substituted by equivalents may achieve an appropriate result.

Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

1: substrate polishing device
11: polishing unit
12: abrasive carrier
13: temperature control module

Claims (10)

a slurry spraying unit positioned on an upper surface of a polishing pad for polishing a substrate and configured to spray a slurry onto an upper surface of the polishing pad;
a temperature control unit provided in the slurry spraying unit and controlling the temperature of the slurry; and
and a controller configured to control the temperature controller so that the temperature of the polishing process with respect to the substrate is controlled through temperature control of the slurry sprayed from the slurry spraying unit. According to claim 1,
The substrate polishing process temperature control module further comprising a position adjusting unit for adjusting the position of the slurry spraying unit. 3. The method of claim 2,
The control unit, the substrate polishing process temperature control module for controlling the position control unit according to the process recipe to adjust the position at which the slurry is sprayed. 4. The method of claim 3,
The substrate polishing process temperature control module further comprising a temperature detection unit for detecting the temperature of the polishing pad. 5. The method of claim 4,
The control unit, the substrate polishing process temperature control module for feedback control of the operation of the temperature control unit or the position control unit based on the temperature detected by the temperature detection unit. 6. The method of claim 5,
The control unit, a substrate polishing process temperature control module for controlling the polishing of the substrate to be performed after the temperature of the polishing pad reaches a set temperature. 7. The method of claim 6,
The control unit, in a state in which the polishing of the substrate is being performed, to control the operation of the temperature control unit or the position control unit so that the temperature of the polishing pad is located within a set range, a substrate polishing process temperature control module. 8. The method of claim 7,
The control unit, after finishing the polishing of the substrate, stops the operation of the temperature control unit until another substrate is positioned on the polishing pad, a substrate polishing process temperature control module. a polishing unit including a polishing platen that rotates and a polishing pad provided on the polishing platen;
a polishing carrier holding the substrate and contacting the substrate to the polishing pad; and
and a temperature control module configured to control the temperature of the polishing pad by adjusting the temperature of the slurry supplied to the polishing pad. 10. The method of claim 9,
The temperature control module,
a slurry spraying unit positioned on the polishing pad and configured to spray the slurry onto the top surface of the polishing pad; and
A substrate polishing apparatus provided in the slurry spraying unit and comprising a temperature control unit for controlling a temperature of the slurry.

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