KR20220006948A - A substrate processing apparatus including a plasma portion - Google Patents

Abstract

A substrate processing device of the present invention may comprise: a chuck unit installed in a chamber, wherein at least one substrate is seated; a plasma electrode part installed inside or outside the chamber and generating plasma when a high-frequency power is applied; and a high-frequency power part that applies the high-frequency power to the plasma electrode part. Therefore, the present invention is capable of securing a degree of uniformity for a thin film.

Description

A substrate processing apparatus equipped with a plasma electrode unit TECHNICAL FIELD

The present invention relates to a substrate processing apparatus provided with a plasma electrode unit.

An apparatus for depositing, etching, or cleaning a thin film on a substrate is referred to as a substrate processing apparatus. The substrate processing apparatus may include a plasma electrode unit to which a high-frequency power is applied as a plasma source that is a source for generating plasma.

On the other hand, in a substrate processing apparatus that forms or etches an atomic layer unit thin film on a substrate by a PEALD (Plasma Enhanced Atomic Layer Deposition) or ALD (Atomic Layer Deposition) process, the performance improvement of the plasma electrode part for improving the uniformity of the thin film may be more required. can

The present invention proposes a plasma electrode unit capable of securing thin film uniformity in a general substrate processing process or a substrate processing process in units of atomic layers.

A substrate processing apparatus of the present invention includes: a chuck unit installed in a chamber and on which at least one substrate is mounted; a plasma electrode part installed inside or outside the chamber and generating plasma when high-frequency power is applied; a high-frequency power supply for applying the high-frequency power to the plasma electrode; may include

Here, a gap (GAP) or an inclination angle with respect to the chuck unit of the plasma electrode part may be adjusted.

According to the present invention, it is possible to precisely control the substrate processing conditions of the chuck unit, and since it is possible to control the plasma density or plasma distribution of the edge and center of the substrate for each region, it is possible to secure thin film uniformity for each center and edge of the substrate. can

Since the plasma state can be managed separately for each center and edge of the substrate, the properties of the thin film can be uniformly controlled over the entire area of the substrate.

When the gas state or the plasma state in the chamber is precisely controlled by the plasma electrode unit, thermal management in the chamber affected by this can be indirectly achieved.

Since the processing uniformity of a single substrate is improved by the plasma electrode unit whose inclination angle is controlled, and the processing uniformity between a plurality of substrates is improved by the disk rotating unit, the overall yield of the ALD process can be remarkably improved.

1 is a schematic diagram showing a substrate processing apparatus of the present invention.
2 is a schematic view showing the underside of the disk of the present invention.
3 is another schematic view showing the underside of the disk of the present invention.
4 is a schematic view showing the upper surface of the disk of the present invention.
5 is a side cross-sectional view of a time division type substrate processing apparatus of the present invention.
6 is a plan view of a plasma electrode mounted in the time division type substrate processing apparatus of the present invention.
7 is a plan view of a plasma electrode unit mounted in the space division method substrate processing apparatus of the present invention.
FIG. 8 is a side view illustrating an inclination angle adjustment state of the first electrode part of the plasma electrode part of FIG. 7 .

The substrate processing apparatus shown in FIG. 1 may include a rotor 150 and a disk 130 on which the plurality of rotors 150 are rotatably mounted. The disk 130 may be circular. The plurality of rotors 150 may be installed at an equal angle with respect to the disk rotation shaft 140 , which is the center of the disk 130 .

A rotor rotating unit for rotating the rotor 150 may be provided. A disk rotating unit for rotating the disk 130 may be provided. The disk rotating unit may orbit the rotor 150 with respect to the disk rotation shaft 140 that is the center of the disk 130 .

In the substrate processing apparatus of the present invention, a chamber 110 and a disk 130 installed inside the chamber 110 to support at least one substrate 10 may be provided. A chamber lid (not shown) covering the upper portion of the chamber 110 may be provided. It is installed in the chamber lid (not shown), and at least one of a source gas (SG), a reactant gas (RG), and a purge gas (PG) is transferred to a different area on the disk 130 . A gas injection unit (not shown) for spraying the .

The chamber 110 may provide a reaction space for processing a substrate through an atomic layer deposition (ALD) process.

As an embodiment of the present invention, there may be a substrate processing apparatus that performs an ALD process in a time division method. In the case of the time division method, the inside of the chamber 110 in which the substrate 10 is accommodated is filled with only one type of gas, for example, a source gas, a source gas process is performed, and then the source gas is removed and the inside of the chamber 110 is purged. The purge gas process may be performed by filling it with a gas, and the purge gas may be taken out again and the reaction gas process may be sequentially performed by filling the chamber 110 with the reaction gas.

As an embodiment of the present invention, there may be a substrate processing apparatus that performs an ALD process in a space division method.

Referring to FIG. 4 , in the space division type chamber 110 , the source gas is injected to the substrate 10 facing the source gas region 310 , and the purge gas is the substrate facing the purge gas region 320 . The reaction gas may be sprayed onto the substrate 10 facing the reaction gas region 330 . One specific substrate 10 passes through the source gas region 310 , the purge gas region 320 , and the reaction gas region 330 in sequence according to the rotation of the disk 130 , and is formed by an Atomic Layer Deposition (ALD) process. A single-layer or multi-layer thin film may be deposited. Plasma may be applied in a state in which the specific substrate 10 faces the corresponding region by rotation of the disk 130 . In a time division or space division method, different ALD gas processes may be performed on a plurality of substrates 10 .

Meanwhile, the thin film thickness of the first substrate and the thin film thickness of the second substrate may be different due to the non-uniformity of the gas distribution. An object of the present invention is to make the processing state for each region of a single substrate 10 uniform regardless of the non-uniform distribution of the gas, and to make the processing state of a plurality of substrates 10 uniform with each other.

A plurality of rotors 150 are installed on the disk 130 and the substrate 10 may be seated thereon. In order to prevent damage to the substrate 10 , the seating surface of the rotor 150 facing the substrate 10 may have the same shape as the seating portion of the substrate 10 . For example, when the substrate 10 has a plate shape, the seating surface of the rotor 150 may also be formed in a plate shape.

The rotation center of the rotor 150 on which the substrate 10 is mounted may be different from the center of the disk 130 or the center of the chamber 110 . Accordingly, one side of the substrate 10 may be disposed adjacent to the center of the disk 130 , and the other side of the substrate 10 may be disposed adjacent to an edge of the disk 130 . This may make non-uniform processing for each area with respect to one substrate 10 . A rotor rotating unit for rotating the rotor 150 may be provided in order to prevent non-uniform processing of one substrate 10 for each area.

When the rotor 150 is rotated, the regions of one side and the other side of the substrate 10 seated on the rotor 150 are not fixed but change every moment, so that the entire region of one substrate 10 can be treated uniformly. The rotor 150 may rotate 360 degrees or more about the center of the rotor 150 as an axis.

Meanwhile, the gas concentration at the first location and the gas concentration at the second location inside the chamber 110 may be different from each other. Accordingly, the thickness of the thin film deposited on the first substrate at the first position and the thickness of the thin film deposited on the second substrate at the second position may be different from each other. When the first substrate and the second substrate alternately pass through the first position and the second position by the disk rotating unit, the thin film thicknesses of the first substrate and the second substrate may be uniform.

The rotor 150 may revolve based on the disk rotation shaft 140 provided at the center of the disk 130 . The disk rotating unit rotates the disk 130 on which the rotor 150 is installed in a forward and reverse rotation of less than 360 degrees or a one-way rotation of more than 360 degrees, thereby changing the central position of the rotor 150 .

It is preferable that the rotor rotating part and the disk rotating part are driven unconstrained or independently. Because, when the rotor rotating unit rotates the rotor 150 at the first speed V1 and the disk rotating unit rotates the disc 130 at the second speed, the thin film uniformity for each area of the specific substrate 10 and the inside of the chamber 110 This is because it is preferable that the rotational speed of the rotor 150 and the rotational speed of the disk 130 are each independently controlled in order to simultaneously achieve uniformity of the thin film for each region of the .

When the rotational speed of the rotor 150 and the rotational speed of the disk 130 are constrained to each other, the processing uniformity for each region for the single substrate 10 is satisfied, but processing uniformity between the plurality of substrates 10 may not be satisfied. . Conversely, the processing uniformity between the respective substrates 10 may satisfy the allowable value, but the processing uniformity for each region of the single substrate 10 may not satisfy the allowable value.

According to the present invention, since the rotor rotating unit and the disk rotating unit are driven independently of each other, both the processing uniformity of the single substrate 10 and the processing uniformity between the plurality of substrates 10 may satisfy design values.

In order for the rotation of the rotor 150 and the rotation of the disk 130 to be smoothly performed by the disk rotating unit, the rotor rotating unit may rotate the rotor 150 while moving together with the disk 130 . When the disk 130 is raised and lowered, the rotor rotating unit may also be raised and lowered together with the disk 130 . When the disk 130 rotates, the rotor rotating unit may also rotate together with the disk 130 .

The rotor rotating unit includes a rotor gear 180 connected to the rotor 150, a main gear 170 linked to the rotor gear 180, a main gear rotating shaft 120 connected to the main gear 170, and a main gear rotating shaft 120. It may include at least one of the rotor motor for rotating. When the rotor motor rotates, the main gear rotation shaft 120 connected to the rotor motor may rotate. The main gear 170 may rotate by the rotation of the main gear rotation shaft 120 , and the rotor gear 180 linked to the main gear 170 may rotate. When the rotor gear 180 rotates, the rotor 150 may rotate.

The disc rotating unit may include at least one of a disc rotating shaft 140 connected to the disc 130 and a disc motor rotating the disc rotating shaft 140 .

The rotor 150 and the disk 130 may rotate at different rotation speeds by the rotor motor and the disk motor that are separately or independently controlled from each other, and may rotate in the same direction or in different directions. The rotor motor and the disk motor may be installed outside the chamber 110 . The main gear rotation shaft 120 connected to the rotor motor and the disk rotation shaft 140 connected to the disk motor may pass through the chamber 110 . As the number of elements passing through the chamber 110 increases, it is disadvantageous to sealing, so it is preferable that the main gear rotation shaft 120 and the disk rotation shaft 140 are coaxially disposed.

As an example, the main gear rotation shaft 120 may be formed in a hollow pipe shape. Since a plurality of rotor rotating parts are scattered around the disk rotating shaft 140 , it is preferable that the main gear rotating shafts 120 coaxial with each other are provided on the outer periphery of the disk rotating shaft 140 . The disk rotation shaft 140 may be rotatably inserted into the hollow of the main gear rotation shaft 120 .

A lift unit 151 for elevating the substrate 10 may be provided in the center of the rotor 150 . When the lift unit 151 rises, the substrate 10 is spaced apart from the seating surface of the rotor 150 , and when the lift unit 151 descends, the substrate 10 may be seated on the seating surface of the rotor 150 .

The thin film may be deposited not only on the substrate 10 , but also on the rotor 150 or disk 130 on which the substrate 10 is seated. According to this, the substrate 10 and the rotor 150 may be partially bonded by the thin film, and the bonding may be separated by the lift. At this time, as the thin film connection surface is dropped by the pressure of the lift, the thin film located at the boundary between the substrate 10 and the rotor 150 may be damaged. This can be prevented by horizontally lifting the substrate 10 from the rotor 150 or maintaining the lift unit 151 in a state parallel to the seating surface of the rotor 150 . The side cross-section of the lift unit 151 may be formed in a 'T' shape.

A lift driving unit 160 for pushing the lift unit 151 upward or pulling it downward may be provided in the chamber 110 . The lift driving unit 160 may penetrate inside and outside the chamber 110 and may have a closed structure. The lift driving unit 160 may maintain a downwardly descending state to escape from the rotating disk 130 or the rotor 150 . When the disk 130 and the rotor 150 are stopped, the lift driving unit 160 may rise to push or pull the lift unit 151 .

Referring to FIG. 2 , the rotor 150 may be installed to face the through hole of the disk 130 . At least one of the rotor gear 180 , the intermediate gear 190 , and the main gear 170 may face the through hole of the disk 130 . The main gear 170 , the rotor gear 180 , and the rotor 150 may rotate in the same direction by the intermediate gear 190 . The bearing 131 may rotatably support the rotor 150 or the rotor gear 180 with respect to the through hole of the disk 130 .

The heater 290 installed in the chamber 110 may improve the reactivity of the substrate 10 and the gas or heat the substrate 10 or the gas uniformly. Since each rotor 150 can be uniformly heated by the heater 290 , processing uniformity for a single substrate 10 and processing uniformity between a plurality of substrates 10 can be improved.

Referring to FIG. 3 , one intermediate gear 190 may mesh with two rotor gears 180 and the main gear 170 adjacent to each other. According to this embodiment, it is preferable that an even number of rotors 150 are installed on the disk 130 , and the number of intermediate gears 190 is half the number of rotors 150 , and the number of intermediate gears 190 is sufficient. can be minimized

Referring to FIG. 1 , the rotor 150 and the rotor rotating unit may also move up and down together with the disk 130 . Since it is lifted together with the disk 130 , the rotor rotating unit may rotate the rotor 150 irrespective of the lift position of the disk 130 .

1 to 8 , the substrate processing apparatus of the present invention may include a chamber 110 , a chuck unit 300 , a plasma electrode unit 410 , and a high frequency power supply unit 400 . The plasma electrode unit 410 may be a CCP method or an ICP method.

The plasma electrode unit 410 of the present invention may serve as all plasma sources including capacitive coupling plasma (CCP) and inductive coupling plasma (ICP) methods induced by an antenna coil.

The CCP method was developed by TEL (Tokyo electron) of Japan and LRC (Lam Research) of the United States, and the ICP method was developed by AMT (Applied Materials) and LRC of the United States.

The present invention tries to localize the plasma source, which is a core component of a semiconductor device, against global competitors. In particular, it is a key to improve the uniformity of the thin film by newly proposing the plasma electrode unit 410 .

The ICP method has the advantage of generating a plasma at a low pressure and the density of the plasma is excellent, so that fine circuit responsiveness may be good. On the other hand, a decrease in plasma uniformity caused by a structural problem of the antenna may be a disadvantage. The ICP type plasma electrode unit 410 may be installed outside the chamber 110 .

The CCP method has the advantage of generating a uniform plasma, but the electric field may directly affect the workpiece and damage the micropattern. In addition, since the plasma density is lower than that of the ICP method, it may be disadvantageous for forming a fine pattern. When the plasma electrode unit 410 of the present invention is employed in the CCP method, the plasma electrode unit 410 is installed inside the chamber 110, and is formed between two plates facing each other by capacitive coupling. Plasma can be formed. Here, the two plates may be the plasma electrode unit 410 and the chuck unit 300 .

For example, in the present invention, in the CCP method, the capacitive coupling formed in the plasma electrode unit 410 and the chuck unit 300 corresponding to two plates is evenly distributed with respect to the substrate 10 or the substrate center 10a and the substrate edge. The distribution for (10b) is to be adjusted for each region. The plasma electrode part 410 of the present invention can adjust the inclination angle with respect to the chuck unit 300 .

By adjusting the gap or the inclination angle of the plasma electrode part 410 , the electromagnetic field or the amount of electric charge formed between the plasma electrode part 410 and the chuck unit 300 may also be adjusted. The gas state of the substrate center 10a and the substrate edge 10b may be adjusted by the electromagnetic field or the difference in the density of electric charges, and the plasma state may be adjusted. When the properties of gas and plasma are adjusted for each region, uniform plasma processing (etching, cleaning, and deposition) may be performed over the entire area of the substrate 10 .

When the plasma density is made uniform between the plasma electrode part 410 and the chuck unit 300, thin film uniformity is not necessarily achieved. Because, for example, in the area of the substrate 10 , since the center portion is small and the edge portion is large, the plasma density is made uniform at arbitrary coordinates of the empty space inside the chamber 110 , the unit area of the substrate 10 . From a viewpoint, the plasma incidence may be non-uniform and the thickness of the thin film may vary.

In addition, even if the same density or the same amount of plasma is applied, thin film formation characteristics may vary according to a distance from the chamber 110 wall. For example, the closer to the chamber 110 wall, the lower the plasma/gas characteristics or thin film formation conditions, and the closer the chamber 110 to the center, the better the plasma/gas characteristics or thin film formation conditions.

It means that the thin film becomes uniform simply by making the plasma density uniform. As a result, the thin film uniformity is determined by analyzing the characteristics of each individual substrate processing apparatus according to the state or shape of the chamber 110 , and then analyzing or testing the plasma/electromagnetic field density for each region including the center and edge of the substrate 10 . It depends on how well you can independently control the differentiation and how finely it can be fine-tuned with a high degree of freedom.

The chuck unit 300 is installed in the chamber 110 , and at least one substrate 10 may be mounted thereon. The plasma electrode unit 410 may be installed inside the chamber 110 in the case of the CCP method and may be installed outside the chamber 110 in the case of the ICP method. The plasma electrode unit 410 may be applied to the high-frequency power supply unit 400 that applies the high-frequency power, and may generate plasma corresponding to the high-frequency power. The chuck unit 300 may be connected to the ground unit 401 . According to the present invention, the gap GAP or the inclination angle of the plasma electrode part 410 with respect to the chuck unit 300 may be adjusted.

RF plasma may be formed by the high frequency power supply. When depositing a PEALD thin film using RF plasma, it should be possible to create a thin film that is thin enough to correspond to the thickness of one atomic layer. In order to obtain a uniform atomic layer thin film, a gap between the chuck unit 300 and the plasma electrode unit 410 may act as an important factor.

As an embodiment for adjusting the gap, the chuck unit 300 may be raised or lowered in the chamber 110 or the height of the chuck unit 300 may be adjusted. On the other hand, the height of the chuck unit 300 may be left as it is, and the height of the plasma electrode part 410 with respect to the chuck unit 300 may be adjusted.

The chuck unit 300 is moved up and down in the chamber 110 , and a gap between the plasma electrode part 410 and the chuck unit 300 may be adjusted according to the elevation of the chuck unit 300 .

The present invention is not limited to adjusting the gap, and the angle between the chuck unit 300 and the plasma electrode unit 410 may be adjusted. By adjusting not only the gap but also the angle, RF plasma characteristics for each region of the substrate 10 can be adjusted, and uniformity of the thin film over the entire area of the substrate 10 depending on this can be achieved at a desired level.

In the case of the chamber 110 of the time division PEALD method, the embodiments of FIGS. 5 and 6 may be applied. Only one substrate 10 may face the plasma electrode unit 410 . It is possible to adjust the gap and the inclination angle so that even plasma characteristics for each region with respect to the substrate center 10a and the substrate edge 10b can be adjusted. In the case of time division PEALD, the plasma electrode unit 410 is divided into several pieces, and a gap or an inclination angle may be adjusted. The substrate center 10a may face the center of the plasma electrode unit 410 , and the substrate center 10a may face the edge of the plasma electrode unit 410 .

The plasma electrode part 410 may include at least one of a first electrode part 411 and a second electrode part 412 . The first electrode part 411 faces the substrate edge 10b, and an inclination angle with respect to the substrate 10 may be adjusted. If a servo motor or an actuator is mounted on each of the first electrode parts 411 , automatic control of the inclination angle may be possible.

When the inclination angles of the plurality of first electrode parts 411 are axially symmetrically adjusted to converge to the center of the substrate 10 , the shape may be as shown in FIG. 5 . Although the inclination angles of each of the first electrode parts 411 may be all different, the inclination direction of each of the first electrode parts 411 may be adjusted in a direction facing the substrate center 10a. In this case, the electromagnetic field of the first electrode part 411 may be focused on the substrate center 10a. The plasma density may be focused on the substrate center 10a or may gradually increase toward the substrate center 10a.

On the other hand, the inclination angles of the plurality of first electrode parts 411 may be adjusted axially symmetrically to converge to the outside of the substrate 10 . An embodiment for this may be a shape of a bud in full bloom with the shape of FIG. 5 spread outward. Although not shown in FIG. 5 , the inclination angles of each of the first electrode parts 411 may all be different, and the inclination direction of each of the first electrode parts 411 may be adjusted to the direction facing the substrate edge 10b. can In this case, the electromagnetic field of the first electrode part 411 may be radiated in a direction toward the substrate edge 10b. The plasma density may diverge toward the edge of the substrate 10b or the edge of the substrate 10b or may gradually decrease toward the edge of the substrate 10 .

The second electrode part 412 faces the substrate center 10a and a height relative to the substrate 10 may be adjusted. Adjusting the inclination angle of the second electrode part 412 may be meaningless. When the inclination angle of the second electrode part 412 is adjusted, plasma characteristics of each region of the substrate center 10a may be greatly changed. This is because gas characteristics or plasma characteristics applied to the substrate 10 are not axially symmetric with respect to the center of the substrate 10 . In the case of the second electrode part 412 , the plasma characteristics of the substrate center 10a can be sufficiently adjusted only by adjusting the gap, and the adjustment of the inclination angle may rather impair the uniformity of the thin film.

When the chamber 110 processes the substrate 10 in a time division manner, the inside of the chamber 110 is filled with only one of a source gas, a purge gas, and a reaction gas, and after performing each process, the other can be replaced with gas. The substrate 10 seated on the chuck unit 300 may be exposed to all of the source gas, the purge gas, and the reaction gas with a time difference. In the plasma electrode unit 410 facing the chuck unit 300 , the inclination angle of the portion facing the edge of the substrate 10 may be adjusted.

That is, the inclination angle of the first electrode part 411 may be adjusted to have an axially symmetrical shape converging to the central point of the substrate 10 . In this case, the plasma density may be focused on the substrate center 10a.

On the other hand, the inclination angle of the first electrode part 411 may be adjusted to have an axially symmetrical shape radiating to the edge or the outside of the substrate 10 . In this case, the plasma density may be thinned in the center of the substrate 10a, concentrated on the edge of the substrate 10b, or may be decreased toward the outside of the substrate 10.

Even in the case of a space division method, it may be possible to adjust a gap or an inclination angle. In particular, FIGS. 7 and 8 show the inclination angle adjustment in the space division method, and although not shown here, when the chuck unit 300 is raised and lowered, the gap adjustment between the first electrode part 411 and the substrate 10 is adjusted to adjust the inclination angle. may be possible independently of

The chuck unit 300 illustrated in FIGS. 5 to 8 may include a disk 130 and a rotor 150 . The disk 130 may rotate about the disk rotation shaft 140 . A plurality of rotors 150 are provided at an equal angle to the disk 130 , are rotatably installed on the disk 130 , and may have a seating surface on which the substrate 10 is placed.

In order for the chamber 110 to process the substrate 10 in a space division manner, a specific substrate 10 may pass through a source gas region, a purge gas region, and a reactant gas region sequentially according to the rotation of the disk 130 . have. The plasma electrode unit 410 may include a plurality of first electrode units 411 provided at an equal angle to the disk 130 . The angle of inclination of the first electrode part 411 with respect to the disk 130 may be adjusted. Since the plurality of substrates 10 are arranged along the circumferential direction of the disk 130 at an equal angle, the second electrode part 412 disposed at the center of the disk 130 may not be required.

The first electrode part 411 may have a structure capable of adjusting an inclination angle with respect to the chuck unit 300 . When the inclination angle of the first electrode part 411 is adjusted, the directionality of the plasma density applied to the substrate 10 may be adjusted.

On the other hand, regardless of time division or space division, in order to control the gas distribution or plasma characteristics for each region of the substrate 10 , the first electrode unit 411 faces the substrate edge 10b, which is the outer periphery of the substrate 10 , and , the second electrode part 412 may face the substrate center 10a that is the inner periphery of the substrate 10 .

The inclination angle of the first electrode part 411 facing the substrate edge 10b may be adjusted. A gap between the second electrode part 412 facing the substrate center 10a and the chuck unit 300 may be adjusted. When the chuck unit 300 is raised and lowered, the gap between the first electrode part 411 and the substrate 10 may be adjusted sufficiently together with the inclination angle adjustment.

When the plasma electrode part 410 is divided into multiple pieces along the radial direction of the substrate 10 , the first electrode part 411 and the second electrode part 412 are located at the substrate center 10a and the substrate edge 10b. Each may be face-to-face.

Meanwhile, the case in which the plasma electrode units 410 are divided into multiple portions along the circumferential direction of the substrate 10 may be cases in which a plurality of first electrode units 411 are arranged at an equal angle.

Regardless of whether the plasma electrode unit 410 is divided in a radial direction or a circumferential direction, plasma characteristics may be controlled in an electrical or control aspect in addition to a mechanical aspect. In detail, the high frequency power supply unit 400 may apply the first high frequency power to the first electrode unit 411 and apply the second high frequency power to the second electrode unit 412 . When the first high frequency power and the second high frequency power are separately applied, the plasma density of the substrate edge 10b and the substrate center 10a may be adjusted.

10...substrate 110...chamber
120...Main gear axis of rotation 130...Disc
131...bearing 140...disc rotating shaft
150...Rotor 151...Lift part
160...Lift drive unit 170...Main gear
180...rotor gear 190...middle gear
290...heater 300...chuck unit
10a...substrate center 10b...substrate edge
400...High-frequency power supply 401...Ground
410... Plasma electrode part 411... First electrode part
412...Second electrode part

Claims (8)

a chuck unit installed in the chamber and on which at least one substrate is seated;
a plasma electrode part installed inside or outside the chamber and generating plasma when high-frequency power is applied;
a high-frequency power supply for applying the high-frequency power to the plasma electrode; including,
The plasma electrode part is a substrate processing apparatus in which a gap (GAP) or an inclination angle with respect to the chuck unit is adjusted.
According to claim 1,
the chuck unit is raised and lowered inside the chamber;
A substrate processing apparatus in which a gap between the plasma electrode part and the chuck unit is adjusted according to the elevation of the chuck unit.
The method of claim 1,
The plasma electrode unit includes a first electrode unit,
The angle of inclination of the first electrode part with respect to the chuck unit is adjusted,
When the inclination angle of the first electrode part is adjusted, a plasma characteristic applied to the substrate is adjusted.
According to claim 1,
The plasma electrode part includes a first electrode part and a second electrode part,
The first electrode part faces the edge of the substrate that is the outer periphery of the substrate,
The second electrode part faces the center of the substrate, which is the inner periphery of the substrate,
The inclination angle of the first electrode part facing the edge of the substrate is adjusted,
A substrate processing apparatus in which a gap between the second electrode part facing the substrate center and the chuck unit is adjusted.
According to claim 1,
The plasma electrode part includes a first electrode part and a second electrode part,
The high frequency power supply unit applies a first high frequency power supply to the first electrode unit,
The high frequency power supply unit applies a second high frequency power supply to the second electrode unit,
When the first high frequency power and the second high frequency power are separately applied, plasma densities of a substrate edge and a substrate center of the substrate are adjusted.
According to claim 1,
The plasma electrode part includes at least one of a first electrode part and a second electrode part,
The first electrode part faces the substrate edge of the substrate and the inclination angle with respect to the substrate is adjusted;
The second electrode part faces the substrate center of the substrate, and a height relative to the substrate is adjusted.
According to claim 1,
The chuck unit includes a disk and a rotor,
The disk rotates about a disk rotation axis,
A plurality of the rotors are provided at an equal angle to the disk, are rotatably installed on the disk, and have a seating surface on which the substrate is placed,
so that the chamber processes the substrate in a space division manner, a specific substrate passes through a source gas region, a purge gas region, and a reactant gas region sequentially according to the rotation of the disk;
The plasma electrode unit includes a plurality of first electrode units provided at an equal angle to the disk,
A substrate processing apparatus in which an inclination angle with respect to the disk is adjusted in the first electrode part.
According to claim 1,
The chamber is filled with only one gas of a source gas, a purge gas, and a reaction gas so as to process the substrate in a time division manner, and is replaced with another gas after performing each process;
The substrate seated on the chuck unit is exposed to all of the source gas, the purge gas, and the reaction gas with a time difference,
A substrate processing apparatus in which an inclination angle of a portion of the plasma electrode facing the chuck unit facing the edge of the substrate is adjusted.

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