KR20210130204A - Substrate holding device and substrate adsorption method - Google Patents

Abstract

The substrate holding apparatus has a stage and an intake path. The stage mounts the substrate and vacuum-sucks and holds the back surface of the substrate. The intake path is connected to a vacuum pump that performs vacuum adsorption. The substrate mounting surface of the stage is divided into a plurality of regions. The suction force for vacuum adsorption is comprised so that switching is possible for every several area|region using the valve provided in the intake path corresponding to every several area|region. A plurality of micropores are formed in the plurality of regions, respectively.

Description

Substrate holding device and substrate adsorption method

The present disclosure relates to a substrate holding apparatus and a substrate adsorption method.

In the manufacturing process of a semiconductor device, the probe test|inspection for evaluating the electrical characteristic of a semiconductor device is performed. In the probe test, an electric signal is inputted for each semiconductor device by bringing a probe needle into contact with an electrode of a semiconductor device formed on a semiconductor substrate, and an electric signal outputted thereto is observed to evaluate electrical characteristics. .

A probe apparatus used for probe inspection holds a substrate to be inspected on which a semiconductor device to be inspected is formed. Further, the probe apparatus includes a stage (mounting table) capable of horizontal movement, vertical movement and rotation, and an alignment apparatus for accurately bringing the probe needle into contact with the electrode of the semiconductor device formed on the substrate to be inspected.

As a technique for holding a substrate in the field of a semiconductor process, a vacuum chuck for fixing the pressure between the back surface of the substrate and the stage is known. Moreover, making it possible to adsorb|suck also to the board|substrate which has curvature by blowing in gas from the upper direction of the board|substrate holding apparatus provided with the vacuum suction hole is proposed.

Japanese Patent Laid-Open No. 2013-214676 Japanese Patent Laid-Open No. 2000-243814

The present disclosure provides a substrate holding apparatus capable of adsorbing a substrate to a substrate mounting surface and a substrate adsorption method.

A substrate holding apparatus according to an aspect of the present disclosure includes a stage and an intake path. The stage mounts the substrate and vacuum-sucks and holds the back surface of the substrate. The intake path is connected to a vacuum pump that performs vacuum suction. The substrate mounting surface of the stage is divided into a plurality of regions. The suction force for vacuum adsorption is comprised so that switching is possible for every several area|region using the valve provided in the intake path corresponding to every several area|region. A plurality of micropores are formed in the plurality of regions, respectively.

According to the present disclosure, the substrate can be adsorbed to the substrate mounting surface.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows an example of the probe apparatus in one Embodiment of this indication.
Fig. 2 is a diagram showing an example of the internal structure of the probe device according to the present embodiment.
3 is a diagram showing an example of a substrate mounting surface of the stage according to the present embodiment.
Fig. 4 is a view showing an example of a connection state with a longitudinal section of the substrate mounting surface of the stage and a vacuum pump.
It is a figure which shows an example of the connection state of the some area|region and a vacuum pump in a vacuum chuck mechanism.
It is a figure which shows typically an example of the positional relationship of the board|substrate hold|maintained by the gas injection apparatus and the stage.
Fig. 7 is a diagram showing an example of the relationship between a plurality of regions on the substrate mounting surface of the stage and the region of the substrate.
It is a flowchart which shows an example of the board|substrate adsorption|suction method in this embodiment.
9 is a diagram schematically showing an example of an adsorption state in Comparative Example 1. FIG.
It is a figure which shows typically an example of the adsorption|suction state in this embodiment.
It is a figure which shows typically an example of the relationship between the board|substrate mounting surface of the stage in a modified example, and a board|substrate, and a leak determination threshold value.

EMBODIMENT OF THE INVENTION Below, embodiment of the board|substrate holding apparatus and board|substrate adsorption|suction method which are disclosed are described in detail based on drawing. In addition, the disclosed technique is not limited by the following embodiment.

Conventionally, a vacuum chuck in which a hole is provided on a substrate mounting surface is known. Further, a configuration of a stage in which the substrate mounting surface is divided into a plurality of regions and provided with grooves instead of holes for each region is also conceivable. In such a vacuum chuck or stage, when the warpage of the substrate is large, even when gas is blown in, a gap is generated around some holes or grooves, and a portion that is not adsorbed at the start of the adsorption is generated. For example, in a stage in which the substrate mounting surface is divided into a plurality of regions, when adsorption is started sequentially for each region, if there is an unadsorbed region, the process is stopped in that region, and the entire substrate is absorbed. it gets difficult Therefore, it is expected that the substrate is also adsorbed to a region that is not adsorbed at the start of adsorption of the substrate.

[Configuration of the probe device 100]

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows an example of the probe apparatus in one Embodiment of this indication. Fig. 2 is a diagram showing an example of the internal structure of the probe device according to the present embodiment.

The probe apparatus 100 of the present embodiment has electrical characteristics of a device (not shown) such as a semiconductor device formed on a substrate such as a semiconductor wafer or a resin substrate (hereinafter, may be briefly referred to as "wafer") W to run the inspection of The probe apparatus 100 includes a main body 1 , a loader part 3 disposed adjacent to the main body 1 , and a test head 5 disposed so as to cover the main body 1 . Further, the probe apparatus 100 includes a stage 7 on which the wafer W is mounted, and a control unit 50 that controls the operation of each component of the probe apparatus 100 .

<Body>

The body 1 is a housing with a cavity inside, and accommodates the stage 7 . An opening 1b is formed in the ceiling portion 1a of the main body 1 . The opening 1b is located above the wafer W mounted on the stage 7, and has a substantially disk-shaped shape that holds a disk-shaped probe card (not shown) having a plurality of probe needles in the opening 1b. A probe card holder (not shown) engages. With this probe card holder, the probe card is disposed to face the wafer W mounted on the stage 7 .

<Loader part>

The loader unit 3 takes out the wafer W housed in a hoop (not shown) serving as a transfer container and transfers it to the stage 7 of the main body 1 . In addition, the loader unit 3 receives the wafer W on which the device's electrical characteristics have been inspected from the stage 7 and accommodates it in the hoop.

<test head>

The test head 5 has a rectangular parallelepiped shape and is configured to be rotatable in the upward direction by a hinge mechanism 11 provided in the main body 1 . The test head 5 is electrically connected to the probe card via a contact ring (not shown) with the main body 1 covered from above. The test head 5 has a function of storing, as measurement data, an electrical signal indicating the electrical characteristics of the device transmitted from the probe card, and judging the presence or absence of an electrical defect in the device based on the measurement data.

<Stage>

As shown in FIG. 2, the stage 7 is arranged on the base 20, and the X-direction moving unit 21 which moves along the X direction shown in the figure, and the Y-direction shown in the figure move along the It has the Y-direction moving unit 23 and the Z-direction moving unit 25 which moves along the Z direction shown in the figure. Further, the stage 7 has a vacuum chuck mechanism 60 for holding the wafer W by suction. The upper surface of the stage 7 serves as a substrate mounting surface 7a that sucks and holds the wafer W by the vacuum chuck mechanism 60 . A detailed configuration of the vacuum chuck mechanism 60 will be described later. Moreover, the stage 7 is provided with the heater (not shown), and it is comprised so that the temperature of the board|substrate mounting surface 7a can be adjusted within the range of 25 degreeC - 200 degreeC, for example. That is, the board holding apparatus is comprised by the stage 7 arrange|positioned on the base 20, the vacuum chuck mechanism 60, etc.

The X direction moving unit 21 moves the stage 7 in the X direction with high precision by rotation of the ball screw 21a along the guide rail 27 arranged in the X direction. The ball screw 21a is rotated by a motor (not shown). In addition, it is possible to detect the amount of movement of the stage 7 by an encoder (not shown) combined with this motor.

The Y-direction moving unit 23 moves the stage 7 in the Y-direction with high precision by rotation of the ball screw 23a along the guide rail 29 arranged in the Y-direction. The ball screw 23a is rotated by the motor 23b. In addition, detection of the movement amount of the stage 7 is enabled by the encoder 23c combined with this motor 23b.

In this way, the X-direction moving unit 21 and the Y-direction moving unit 23 move the stage 7 in the X and Y directions orthogonal to each other along the horizontal plane.

The Z-direction moving unit 25 has a motor and an encoder (not shown), and while moving the stage 7 up and down along the Z direction, the movement amount can be detected. The Z-direction moving unit 25 moves the stage 7 toward the probe card so that the electrode and the probe needle in the device on the wafer W come into contact with each other. In addition, the stage 7 is arrange|positioned on the Z-direction moving unit 25 by a motor (not shown) rotatably in the θ direction shown in the drawing.

<Lower imaging unit>

Further, a lower imaging unit 35 is disposed inside the main body 1 . Here, the lower imaging unit 35 images the probe needle formed on the probe card. The lower imaging unit 35 is fixed to the stage 7 and moves together with the stage 7 in the X-direction, Y-direction, and Z-direction.

<alignment unit>

Moreover, in the inside of the main body 1, the alignment unit 41 is arrange|positioned above the stage 7. The alignment unit 41 is configured to be movable in the Y direction in FIG. 2 by a drive unit (not shown). The alignment unit 41 has a lower surface along a horizontal plane facing the stage 7 and the lower imaging unit 35 .

<Upper imaging unit>

The alignment unit 41 is provided with an upper imaging unit 43 . The upper imaging unit 43 images an electrode of a device formed on the wafer W mounted on the stage 7 .

<Gas injection device>

The alignment unit 41 is provided with a gas injection device 45 that injects gas toward the upper surface of the wafer W mounted on the stage 7 . The gas injection device 45 injects gas, such as dry air, to the upper surface of the wafer W, for example. The gas injection device 45 is an adsorption auxiliary means for facilitating adsorption when the wafer W is adsorbed and held on the stage 7 by the vacuum chuck mechanism 60 . The stage 7 having the vacuum chuck mechanism 60 and the gas injection device 45 cooperate as a substrate holding device according to the present disclosure to hold the wafer W on the substrate mounting surface 7a. run The detailed configuration of the gas injection device 45 will be described later.

<Baek Chuck Mechanism>

Next, the vacuum chuck mechanism 60 in the stage 7 will be described with reference to FIGS. 3 to 5 . 3 is a diagram showing an example of a substrate mounting surface of the stage according to the present embodiment. Fig. 4 is a view showing an example of a connection state with a longitudinal section of the substrate mounting surface of the stage and a vacuum pump. The vacuum chuck mechanism 60 is connected to a plurality of fine holes 7b provided on the substrate mounting surface 7a of the stage 7 , a space 62 connected to the fine hole 7b , and each space 62 . An intake passage 63 to be used and a vacuum pump 70 connected to the other end of the intake passage 63 are provided.

The substrate mounting surface 7a of the stage 7 is divided into a plurality of regions 61 . In the example shown in FIG. 3 , the central region corresponding to the central portion of the substrate mounting surface 7a of the stage 7 and the central region corresponding to the periphery of the substrate mounting surface 7a of the stage 7 surround the central region. is partitioned into a plurality of peripheral regions. The central region is the region 61A shown in Fig. 3, and corresponds to the central portion of the substrate mounting surface 7a having a circular shape in plan view. The peripheral regions are regions 61B, 61C, 61D, 61E, 61F, 61G, 61H, 61I, 61J, 61K, 61L, and 61M, of the region 61A of the substrate mounting surface 7a having a circular shape in plan view. are provided around. The region 61A absorbs the central portion of the circular wafer W. As shown in FIG. The regions 61B, 61C, 61D, 61E, 61F, 61G, 61H, 61I, 61J, 61K, 61L, and 61M adsorb the peripheral portion of the circular wafer W. As shown in FIG.

Fine holes 7b are provided throughout the regions 61A to 61M. The micropores 7b are vertically provided in a pattern satisfying the condition of phi < p ≤ 2 phi, for example, with a diameter of phi = 0.25 mm and a pitch of p = 0.5 mm. The fine hole 7b is connected to the vacuum pump 70 via the space 62 and the intake passage 63 . The micropores 7b are sealed by the wafer W while holding the wafer W on the substrate mounting surface 7a, and the space 62 and the inside of the micropores 7b are maintained at a reduced pressure.

FIG. 4 shows a cross section of the upper part of the stage 7 in the line IV-IV of FIG. 3 . As shown in FIG. 4 , a plurality of fine holes 7b in the region 61A are connected to a space 62A provided under the region 61A. The space 62A has a shape substantially the same as that of the region 61A when viewed from the substrate mounting surface 7a side. A post supporting the space 62A is provided inside the space 62A. Moreover, each space 62 comrades does not communicate with each other, but is an independent space. The space 62A is connected to the vacuum pump 70 via a pipe 63A corresponding to the region 61A and an intake path 63 in which the pipe of each region 61 joins. The pipe 63A is provided with a vacuum gauge 64A and a switching valve 65A.

Further, the regions 61B to 61M are also similar to the region 61A, for example, the micropores 7b of the regions 61D and 61J are respectively connected to the spaces 62D and 62J, and the pipes 63D and 63J. and a vacuum pump 70 via an intake path 63 . Further, in the pipes 63D and 63J, vacuum gauges 64D and 64J and switching valves 65D and 65J are provided, respectively.

It is a figure which shows an example of the connection state of the some area|region in a vacuum chuck mechanism, and a vacuum pump. In FIG. 5, the connection state of the area|regions 61A-61M in the vacuum chuck mechanism 60 and the vacuum pump 70 is shown. Spaces 62A-62M of each area|region 61A-61M are respectively connected to the vacuum pump 70 via piping 63A-63M which forms a part of the intake path 63. As shown in FIG. Switching valves 65A to 65M are provided in the middle of each of the pipes 63A to 63M. The selector valves 65A to 65M are in a state in which the regions 61A to 61M can be sucked by the vacuum pump 70, and the regions 61A to 61M are opened to the outside air 71 via the exhaust pipes 67A to 67M. switch state. With the above configuration, the wafer W can be partially sucked independently in each of the regions 61A to 61M. For example, the region 61A and the region 61B may take an adsorption state and a non-adsorption state with respect to the wafer W, respectively. That is, each area|region 61A-61M can control an adsorption|suction state and a non-adsorption state independently.

In addition, a vacuum gauge 73 is provided in the intake passage 63 . By measuring the pressure of the intake passage 63 with the vacuum gauge 73 , it can be detected whether or not a leak in which outside air enters is occurring in any one of the regions 61A to 61M.

<Gas injection device>

Next, the detailed structure of the gas injection device 45 is demonstrated, referring FIG. 6 is a diagram schematically showing an example of the positional relationship between the gas injection device and the substrate held by the stage. In the present embodiment, the gas injection device 45 includes a plurality of nozzles 81 (for example, three) for partially jetting gas toward the upper surface of the wafer W, and each nozzle 81 . A supporting nozzle plate 83 is provided. In addition, the gas injection device 45 is connected to each nozzle 81 and includes a pipe 85 for supplying gas to the nozzle 81 , and a gas source 87 connected to the other end of the pipe 85 . are being prepared In the middle of the pipe 85 , a mass flow controller (MFC) 89 and an on/off valve 91 for flow control are provided. Examples of the gas include dry air, nitrogen gas, and rare gas. Each nozzle 81 is connected to the gas source 87 via branch pipes 85A to 85C from which the pipe 85 is branched. Each branch pipe 85A-85C is provided with on-off valve 93A-93C, respectively.

It is also possible to use a heating gas as the gas to be injected from the gas injection device 45 . In this case, it is preferable that the temperature of the heating gas be at a temperature about the same as the temperature of the substrate mounting surface 7a of the stage 7 . For example, the temperature of the heating gas is preferably set within the range of ±10°C, more preferably within the range of ±5°C, with respect to the temperature of the substrate mounting surface 7a of the stage 7 . For example, when the temperature of the substrate mounting surface 7a of the stage 7 is 120°C, the temperature of the heating gas is preferably in the range of 110°C to 130°C, and is preferably in the range of 115°C to 125°C. more preferably. Further, for example, when the temperature of the substrate mounting surface 7a of the stage 7 is 150°C, the temperature of the heating gas is preferably within the range of 140°C to 160°C, and within the range of 145°C to 155°C. It is more preferable to

By using a heating gas as the gas injected from the gas injection device 45, it becomes possible to heat the wafer W also from the upper surface side. As a result, since the temperature difference between the lower surface and the upper surface of the wafer W mounted on the substrate mounting surface 7a of the stage 7 can be extremely small, the occurrence of warpage during heating of the wafer W can be suppressed. . In particular, when the wafer W has a structure in which different resins are laminated, curvature tends to occur due to the difference in thermal expansion coefficient due to the material, so using a heating gas is effective for suppressing warpage. In addition, since the wafer W can be heated from the upper surface side by the heating gas as well, when a thermoplastic resin is used for the material of the wafer W, its flexibility increases and the substrate of the stage 7 is Adsorption to the mounting surface 7a is facilitated.

In this embodiment, since the nozzle plate 83 is supported by the alignment unit 41, the three nozzles 81 are movable in the Y direction in FIG. On the other hand, the stage 7 is movable in the X-Y-Z direction in FIG. 2 by the X-direction moving unit 21 , the Y-direction moving unit 23 , and the Z-direction moving unit 25 . Therefore, the gas can be independently injected from each nozzle 81 toward a target site of the wafer W held by the stage 7 . In this embodiment, it is comprised so that gas can be injected at different timings toward the 13 areas 61A-61M divided in the board|substrate mounting surface 7a of the stage 7, respectively. For example, in FIG. 3, gas injection positions 61A1, 61B1, 61C1, 61D1, 61E1, 61F1, 61G1, 61H1, 61I1, 61J1, 61K1, 61L1, 61K1, 61L1, 61M1 are It is projected and represented by an imaginary line. Therefore, with respect to the wafer W held by the stage 7, gas is separately injected to 13 positions corresponding to the regions 61A to 61M.

In addition, the number of nozzles 81 is not limited to three, for example, one or two may be sufficient, and four or more may be sufficient, and 13 nozzles 81 are made to correspond individually to each area|region 61A-61M. may be provided. Further, the gas injection device 45 may be provided independently of the alignment unit 41 .

<control unit>

The controller 50 controls the operation of each component of the probe apparatus 100 . The control unit 50 may be a computer including a processor, a storage unit, an input device, a display device, and the like. The controller 50 controls each part of the probe apparatus 100 . The control unit 50 may use an input device to allow an operator to input a command to manage the probe device 100 . In addition, the control unit 50 may visualize and display the operating state of the probe device 100 by the display device. In addition, the storage unit of the control unit 50 stores a control program for controlling various processes executed by the probe device 100 by the processor, and recipe data. A desired process is executed in the probe apparatus 100 by the processor of the control unit 50 executing a control program and controlling each unit of the probe apparatus 100 according to recipe data.

In the probe apparatus 100 of the present embodiment, the control unit 50 controls the plurality of wafers W so that the device formed on the wafer W can be inspected. Specifically, in the probe device 100 , the control unit 50 includes each component (eg, a driving device such as a motor 23b , a position detecting device such as an encoder 23c , and a lower imaging unit 35 ). , the upper imaging unit 43 , the gas injection device 45 , the vacuum chuck mechanism 60 , etc.). These are realized when the processor of the control unit 50 executes the control program.

In the probe device 100 having the above configuration, the stage 7 is held on the probe card and the stage 7 by moving the stage 7 in the horizontal direction (X direction, Y direction, θ direction) and vertical direction (Z direction). By adjusting the relative position with the wafer W, the electrode of the device and the probe needle are brought into contact. The test head 5 passes a test current to the device through each probe needle of the probe card. The probe card transmits an electrical signal representing the electrical characteristics of the device to the test head 5 . The test head 5 stores the transmitted electrical signal as measurement data, and determines the presence or absence of an electrical defect in the device to be inspected.

[Substrate adsorption method]

Next, a substrate adsorption method according to an embodiment of the present disclosure will be described. First, with reference to FIG. 7 , the relationship between the regions 61A to 61M of the substrate mounting surface 7a of the stage 7 and the portion of the wafer W adsorbed thereto will be described. Fig. 7 is a diagram showing an example of the relationship between a plurality of regions on the substrate mounting surface of the stage and the region of the substrate. Here, a portion of the wafer W adsorbed on the region 61A of the stage 7 is referred to as the region PA. Similarly, in the wafer W, the portion adsorbed to the region 61B is the region PB, the portion adsorbed to the region 61C is the region PC, and the portion adsorbed to the region 61D is the region ( PD) and the portion adsorbed to the region 61E is referred to as the portion PE. Further, in the wafer W, the portion adsorbed to the region 61F is the region PF, the portion adsorbed to the region 61G is the region PG, and the portion adsorbed to the region 61H is the region ( PH) and the portion adsorbed to the region 61I is referred to as the site PI. Further, in the wafer W, the portion adsorbed to the region 61J is the region PJ, the portion adsorbed to the region 61K is the region PK, and the portion adsorbed to the region 61L is the region ( PL) and the portion adsorbed to the region 61M is referred to as the site PM.

It is a flowchart which shows an example of the board|substrate adsorption|suction method in this embodiment. First, as a preparatory step, the wafer W is mounted on the substrate mounting surface 7a of the stage 7 by a transfer device (not shown).

The control unit 50 selects one area from the plurality of areas 61A to 61M (step S1). The control unit 50 makes the corresponding area PA of the wafer W adsorb to the selected area 61, for example, the area 61A (step S2). The control part 50 switches the switching valve 65A, and makes the space 62A and the micropore 7b of the area|region 61A negative pressure. At this time, the spaces 62B to 62M and the fine holes 7b corresponding to the other regions 61B to 61M are left open to the atmosphere. In addition, the control unit 50 moves any one of the nozzles 81 of the gas injection device 45 to just above the area PA, and sprays the gas from the nozzle 81 toward the area PA. good.

The control unit 50 compares the current adsorption force with the adsorption threshold of the selected region 61, for example, the region 61A (step S3). Here, the adsorption force can be expressed as, for example, a percentage. The adsorption force is 0% when, for example, the values of the vacuum gauges 64A to 64M when the vacuum pump 70 is operated in a state where the wafer W is not mounted are expressed as a percentage. In addition, let the value of the vacuum gauges 64A-64M when the vacuum pump 70 is operated in the state where the flat wafer W for adjustment is mounted, for example, is 100% in the case where the adsorption|suction force is expressed as a percentage. The adsorption threshold is set in each of the regions 61A to 61M, and is a threshold for determining whether adsorption may proceed to the next region 61 . The adsorption threshold can be set to a value larger than the value of the state in which the wafer W is not mounted. As the adsorption threshold, for example, a value indicating a state in which even a little adsorption such as 5% or 10% is used can be used. That is, the adsorption threshold is the micropore 7b in the non-floating part even if a part of the region 61 floats and a flow of air or the like is generated in the space 62 from the outside through a part of the micropore 7b. ), the value corresponding to the suctioned state can be used. In addition, the adsorption threshold may be set to another value, for example, an arbitrary value such as 30%.

The control unit 50 determines whether the current adsorption force of the selected region 61 is equal to or greater than an adsorption threshold (step S4). When it is determined that the current adsorption force is equal to or greater than the adsorption threshold (step S4: YES), the control unit 50 determines whether or not adsorption of the entire area 61 has been completed (step S5). The control part 50 determines that adsorption|suction is complete when the adsorption|suction force of the whole area|region 61 becomes 50% or more (50% of determination value of adsorption force), for example.

When it is determined that the adsorption of the entire region 61 is not completed (step S5: No), the control unit 50 determines whether or not steps S2 to S7 are repeated a predetermined number of times, that is, whether the adsorption is repeated a predetermined number of times. It is determined whether or not (step S6). Here, if the predetermined number of times is, for example, performing a series of sucking on the regions 61A to 61M 5 times, the number of the regions 61A to 61M can be 13 × 5 times = 65 times. In addition, it is assumed that the frequency|count with respect to the area|region where adsorption is completed is subtracted. If it is determined that the adsorption is not repeated the predetermined number of times (step S6: NO), the control unit 50 selects the next area 61, for example, area 61B (step S7), and returns to step S2. . The control unit 50 repeats steps S2 to S7 until, for example, the adsorption force becomes 50% or more for the regions 61A to 61M. At this time, you may make it skip the area|region 61 where adsorption|suction has been completed.

When it is determined that the adsorption has been repeated a predetermined number of times, that is, when there is an area 61 in which adsorption is not completed even after repeating the adsorption for a predetermined number of times (step S6: Yes), the control unit 50 indicates that the substrate cannot be adsorbed. is outputted (step S8), and the substrate adsorption process is ended. In addition, when it is determined in step S4 that the current adsorption force is less than the adsorption threshold (step S4: NO), the control unit 50 outputs an error indicating that the substrate cannot be adsorbed (step S8), and the substrate adsorbs. Terminate processing.

When it is determined in step S5 that the adsorption of the entire region 61 has been completed (step S5: YES), the control unit 50 assumes that the substrate adsorption has been completed and ends the substrate adsorption process. Thereby, in the substrate adsorption|suction method of this embodiment, it can adsorb|suck also to the part which adsorption|suction is not completed at the time of adsorption|suction start of a board|substrate. That is, in the substrate adsorption method of the present embodiment, the regions 61A to 61M are gradually sucked, and by repeating this, the wafer W (substrate) can be gradually sucked onto the substrate mounting surface 7a. Therefore, in the probe apparatus 100, a highly reliable device inspection can be performed.

[Variation]

In the above embodiment, the case where the stage 7 and the wafer W are circular has been described. However, also in the case where either or both of the stage 7 and the wafer W are rectangular, the adsorption threshold is It can adsorb|suck by using. First, using FIGS. 9 and 10 , as Comparative Example 1, a case in which a groove is provided in the region 61 and the groove is connected to the intake passage 63 to be sucked, and the fine hole 7b as in the above embodiment and a case in which the space 62 is provided and sucked will be described.

9 is a diagram schematically showing an example of an adsorption state in Comparative Example 1. FIG. 9 , in Comparative Example 1, a groove 202 is provided in the stage 201 , and a wafer W is mounted so as to cover the groove 202 . In this case, as shown in the state 200a, if the wafer W is flat, the leakage becomes 0%. However, as shown in state 200b, if there is a region 203 in which the wafer W is bent, air or the like flows through the entire groove 202 like the flow path 204, and the leakage becomes 100%. .

It is a figure which shows typically an example of the adsorption|suction state in this embodiment. As shown in FIG. 10 , in the present embodiment, the wafer W is mounted so as to cover the fine holes 7b-1, 7b-2, and 7b-3 provided in the stage 7 . In this case, as indicated by the state 205a, if the wafer W is flat, the leakage becomes 0%. On the other hand, in the present embodiment, as shown by the state 205b, even if the region 206 in which the wafer W is bent exists, air or the like flows through the micropores 7b-3 as in the flow path 207 . , in order to maintain the adsorption state of the micropores 7b-1 and 7b-2, the leakage becomes 1/3, that is, about 33%. By utilizing the difference in this effect, the circular wafer W can also be adsorbed on the rectangular stage.

It is a figure which shows typically an example of the relationship between the board|substrate mounting surface of the stage, and a board|substrate in a modified example, and a leak determination threshold value. As shown in FIG. 11, the board|substrate mounting surface 210 in the stage of a modified example is rectangular. The substrate mounting surface 210 is divided into 16 regions from regions 211A to 211P in a grid shape, for example. On the substrate mounting surface 210 , for example, a circular wafer W is mounted as shown in FIG. 11 . At this time, leak determination thresholds are set in the regions 211A to 211P. The leak determination threshold is a value indicating in percentage how much leakage is allowed in each region 211 . For example, in the region 211A, a 70% leak is allowed. This corresponds to the value obtained by subtracting the determination value of the adsorption force in the above embodiment from 100%. Accordingly, in the region 211A, when the adsorption force is 30% or more, it is determined that the adsorption has been completed. The regions 211D, 211M, and 211P are also the same as those of the region 211A.

Similarly, in the region 211B, since the leak determination threshold is 30%, when the adsorption force is 70% or more, it is determined that adsorption is complete. The regions 211C, 211E, 211H, 211I, 211L, 211N, and 211O are also the same as in the region 211B. Similarly, in the region 211F, since the leak determination threshold is 0%, it is determined that the adsorption is complete when the adsorption force is 100%. Also, the regions 211G, 211J, and 211K are the same as those of the region 211F. In addition, the determination value of the adsorption force of each region 211 is a flat wafer W for adjustment, each region 211 When the value of the state covering the entirety of is 100%, the value multiplied by a predetermined coefficient may be corrected to be 100% For example, for 30% of the determination value of the adsorption force of the region 211A, the region The correction value 50% of the value 100% x 0.5 of the state covering the entirety of (211A) may be 100%, and the judgment value for the correction value may be 30%. The value will be 15%.

In addition, the adsorption threshold values of the regions 211A to 211P at the start of adsorption are lower than the determination value of the adsorption force. For example, when the adsorption threshold is set to 1% in the region 211A, if the current adsorption force is 1% or more, adsorption of the region 211B, which is the next region, proceeds. Thereafter, the regions 211C to 211P are adsorbed in the same order in the same manner, and when the adsorption force of the regions 211A to 211P reaches the determination value of the adsorption force based on the respective leak determination thresholds, it is determined that the adsorption is complete. can do. That is, in the modified example, even if the wafer W is in a state in which the wafer W does not exist for more than half of the region 211 , for example, it is not determined as adsorption NG, and it is recognized that the wafer W is adsorbed normally.

The order of adsorption may be any order, for example, from the region 211F near the center of the substrate mounting surface 210 to the regions 211G, 211K, 211J, 211I, 211E, 211A, ..., 211M. It may adsorb|suck in the same spiral form as In addition, the adsorption|suction may be made to adsorb|suck the areas 211A to 211P collectively, and to assist the adsorption|suction using the gas injection device 45 with respect to the area|region 211 which has not reached|attained the determination value of adsorption|suction force.

Further, in the modified example, the wafer can be sucked similarly even when the rectangular wafer is sucked on the circular stage, the circular wafer is sucked on the circular stage, and the rectangular wafer is sucked on the rectangular stage.

As mentioned above, according to this embodiment, the board|substrate holding apparatus has the stage 7 and the intake path 63. As shown in FIG. The stage 7 mounts a substrate, and vacuum-sucks and holds the back surface of the substrate. The intake path 63 is connected to a vacuum pump 70 that performs vacuum adsorption. The substrate mounting surface 7a of the stage 7 is divided into a plurality of regions 61 . The suction force for vacuum adsorption is comprised so that switching is possible for every some area|region 61 using the switching valve 65 provided in the intake passage 63 corresponding to every some area|region 61. A plurality of fine holes 7b are formed in the plurality of regions 61, respectively. As a result, the substrate can be adsorbed to the substrate mounting surface. That is, even a substrate having a large width or a substrate having a shape different from that of the substrate mounting surface can be adsorbed to the substrate mounting surface.

In addition, according to this embodiment, the stage 7 and the board|substrate are circular. As a result, the circular substrate can be adsorbed to the circular stage 7 .

Moreover, according to a modification, the stage 7 is circular, and the board|substrate is square. As a result, the rectangular substrate can be adsorbed on the circular stage 7 .

Further, according to the present embodiment, the plurality of regions 61 includes a central region corresponding to the central portion of the stage 7 and a plurality of peripheral regions corresponding to the periphery of the stage 7 and surrounding the central region. do. As a result, since it can adsorb|suck in order in the circumferential direction of a board|substrate, even if it is a board|substrate with large curvature, it can adsorb|suck.

Further, according to the modified example, the stage is rectangular and the substrate is circular. As a result, the circular board|substrate can be adsorb|sucked to the square stage.

Further, according to a modification, the stage and the substrate are rectangular. As a result, the rectangular substrate can be adsorbed on the rectangular stage.

Further, according to the modified example, the plurality of regions 211 are regions in which the substrate mounting surface 210 is partitioned in a grid shape. As a result, even when a part of the region 211 is not covered with the substrate, the substrate can be adsorbed.

Moreover, according to this embodiment, the board|substrate holding apparatus further has the gas injection apparatus 45 which blows in gas from the upper surface of a board|substrate. The gas injection device 45 blows gas into each of the plurality of regions 61 . As a result, since the board|substrate is pressurized by blowing in gas, even a board|substrate with large curvature can be adsorb|sucked.

Moreover, according to this embodiment, the substrate adsorption|suction method mounts a board|substrate, and the stage 7 which vacuum-sucks and holds the back surface of a board|substrate, and the intake path 63 connected to the vacuum pump 70 which performs vacuum adsorption|suction. A substrate adsorption method by a substrate holding device having In the substrate holding apparatus, the suction force by the intake passage 63 corresponding to each of the plurality of areas 61 in the substrate mounting surface 7a of the stage 7 divided into the plurality of areas 61 , Among the regions 61 , the substrate is adsorbed in the first region, and an adsorption threshold value of the first region is compared with the current adsorption force. The substrate holding device determines whether or not the current adsorption force is equal to or greater than an adsorption threshold. When the substrate holding apparatus determines that the current adsorption force is equal to or greater than the adsorption threshold, the substrate is adsorbed in the next area, the adsorption threshold in the next area is compared with the current adsorption force, and in the next area, Determination of whether the current adsorption force of is equal to or greater than the adsorption threshold is sequentially performed for the plurality of regions 61 . As a result, the substrate can be adsorbed to the substrate mounting surface. That is, even a substrate having a large warpage or a substrate having a shape different from that of the substrate mounting surface can be adsorbed to the substrate mounting surface.

It should be considered that embodiment disclosed this time is an illustration in every point, and is not restrictive. The above embodiments may be omitted, replaced, or changed in various forms without departing from the appended claims and the gist thereof.

In addition, although said embodiment demonstrated using a semiconductor wafer as a board|substrate, the technique of indication is not limited to this. The substrate may be, for example, a substrate for a flat panel display typified by a glass substrate used in a liquid crystal display device, or a substrate for mounting inspection such as a resin substrate on which a large number of IC (semiconductor integrated circuit) chips are mounted, or a glass substrate.

1: body 5: test head
7: Stage 7a: Board mounting surface
7b: fine hole 20: expectation
45: gas injection device 50: control unit
60: vacuum chuck mechanism 61, 61A to 61M: area
62, 62A to 62M: space 63: intake passage
63A to 63M: piping 64A to 64M, 73: vacuum gauge
65A to 65M: switching valve 70: vacuum pump
100: probe device 210: substrate mounting surface
211, 211A to 211P: Area W: Wafer

Claims (9)

A stage for mounting a substrate and holding the back surface of the substrate by vacuum suction;
A substrate holding apparatus having an intake path connected to a vacuum pump for performing the vacuum suction,
The substrate mounting surface of the stage is divided into a plurality of regions,
The suction force for vacuum adsorption is configured to be switchable for each of the plurality of areas by using a valve provided in the intake passage corresponding to each of the plurality of areas,
A plurality of micropores are respectively formed in the plurality of regions.
board holding device. The method of claim 1,
The stage and the substrate are characterized in that circular
board holding device. The method of claim 1,
The stage is circular,
The substrate is characterized in that the square
board holding device. 4. The method according to claim 2 or 3,
The plurality of regions includes a central region corresponding to a central portion of the stage and a plurality of peripheral regions corresponding to a periphery of the stage and surrounding the central region.
board holding device. The method of claim 1,
The stage is rectangular,
The substrate is characterized in that the circular
board holding device. The method of claim 1,
The stage and the substrate are characterized in that the rectangular shape
board holding device. 7. The method according to claim 5 or 6,
The plurality of regions are regions in which the substrate mounting surface is partitioned in a grid shape.
board holding device. 8. The method according to any one of claims 1 to 7,
In addition, it has a gas injection device for blowing gas from the upper surface of the substrate,
The gas injection device is characterized in that the gas is blown into each of the plurality of regions.
board holding device. A stage for mounting a substrate and holding the back surface of the substrate by vacuum suction;
A substrate adsorption method by a substrate holding device having an intake path connected to a vacuum pump for performing the vacuum adsorption,
The substrate is adsorbed in a first area among the plurality of areas by the suction force by the intake passage corresponding to each of the plurality of areas on the substrate mounting surface of the stage divided into a plurality of areas, Comparing the adsorption threshold of region 1 with the current adsorption capacity,
determining whether the current adsorption force is greater than or equal to the adsorption threshold;
When it is determined that the current adsorption force is equal to or greater than the adsorption threshold value, adsorption of the substrate in the next area, comparison of the adsorption threshold value and the current adsorption force in the next area, and in the next area Determination of whether or not the current adsorption force in the present invention is equal to or greater than the adsorption threshold is sequentially performed for the plurality of regions.
Substrate adsorption method.

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