KR20210111867A - Pick-up property evaluation method, dicing and die-bonding integrated film, dicing and die-bonding integrated film evaluation method and selection method, and semiconductor device manufacturing method - Google Patents

Abstract

The pick-up property evaluation method according to the present disclosure includes a step of preparing a dicing and die-bonding integrated film to be evaluated comprising a base layer, an adhesive layer and an adhesive layer in this order, and a peeling angle of 30° to the adhesive layer. A first measurement step of measuring the adhesive strength of the pressure-sensitive adhesive layer, a step of attaching a wafer having a thickness of 10 to 100 μm to the adhesive layer of the dicing and die-bonding integrated film, and attaching the wafer and the adhesive layer with an adhesive piece ^{having an area of 9 mm 2 or less} A second measurement step of measuring the edge peeling strength when the edge of the chip with the adhesive piece is peeled from the pressure-sensitive adhesive layer by pressing the central portion of the chip with the adhesive piece from the base layer side into pieces and a step of breaking it into pieces.

Description

Pick-up property evaluation method, dicing and die-bonding integrated film, dicing and die-bonding integrated film evaluation method and selection method, and semiconductor device manufacturing method

The present disclosure relates to a pick-up property evaluation method, a dicing and die-bonding integrated film, a dicing and die-bonding integrated film evaluation method and selection method, and a semiconductor device manufacturing method.

A semiconductor device is manufactured through the following process. First, a dicing process is performed in the state which stuck the adhesive film for dicing on the wafer. After that, an expand process, a pickup process, a mounting process, a die bonding process, and the like are performed.

In the manufacturing process of a semiconductor device, the film called a dicing die-bonding integrated film is used (refer patent documents 1, 2). This film has a structure in which a base material layer, an adhesive layer, and an adhesive bond layer are laminated|stacked in this order, and is used as follows, for example. First, a wafer is diced in the state which affixed the surface on the side of an adhesive bond layer with respect to a wafer, and fixed the wafer with a dicing ring. As a result, the wafer is divided into multiple chips. Then, after weakening the adhesive force of the adhesive layer with respect to an adhesive bond layer by irradiating an ultraviolet-ray with respect to an adhesive layer, a chip is picked up from an adhesive layer together with the adhesive bond piece from which the adhesive bond layer is divided into pieces. Thereafter, a semiconductor device is manufactured through a step of mounting a chip on a substrate or the like via an adhesive piece. Hereinafter, the laminate of the chip and the adhesive piece will be referred to as "a chip with the adhesive piece"

As described above, the pressure-sensitive adhesive layer (dicing film) whose adhesive strength is weakened by irradiation with ultraviolet rays is called UV curable. On the other hand, in the manufacturing process of a semiconductor device, an ultraviolet-ray is not irradiated, and the adhesive layer with a constant adhesive force is called a pressure-sensitive type. A dicing die-bonding integrated film having a pressure-sensitive adhesive layer has the advantage that a user (mainly a semiconductor device manufacturer) does not need to perform a process of irradiating ultraviolet rays, and there is no need for equipment for this purpose. . While patent document 3 can be said to be a UV curable type in that an adhesive layer contains the component which hardens by an ultraviolet-ray, the ultraviolet-ray is previously irradiated only to the predetermined part of an adhesive layer, and a user in the manufacturing process of a semiconductor device Disclosed is a dicing die-bonding film which can also be called a pressure-sensitive type because it does not need to be irradiated with ultraviolet rays.

Patent Document 1: Japanese Patent Application Laid-Open No. 2012-069586 Patent Document 2: Japanese Patent Application Laid-Open No. 2014-135469 Patent Document 3: Japanese Patent Publication No. 4443962

The pressure-sensitive adhesive layer of the dicing die-bonding integrated film is required to have high adhesion to the adhesive layer and the dicing ring in the dicing process. If the adhesive strength of the adhesive layer is insufficient, peeling occurs between the adhesive layer and the adhesive layer according to the high-speed rotation of the dicing blade, and the chip with the adhesive piece is blown off (hereinafter referred to as "DAF flying". DAF is die attach film) or a phenomenon in which the dicing ring is peeled from the pressure-sensitive adhesive layer by the flow of cutting water (hereinafter, this phenomenon is referred to as “ring peeling”) occurs. On the other hand, in a pick-up process, it is calculated|required that the adhesive force with respect to the adhesive bond layer of an adhesive layer is low to some extent from a viewpoint of the outstanding pick-up property. When the adhesive force of an adhesive layer is excessively strong, a chip|tip with an adhesive bond piece will not peel from an adhesive layer, a pickup defect will generate|occur|produce, or a chip crack will generate|occur|produce, and a yield will fall.

By the way, the inventors have found that, when restructuring the wafer by dicing into small (小) chip (e.g., less than the area at the time of flat 9mm ²⁾ screen, in the conventional knowledge in the subsequent pick-up step (見) found that it exhibits a peculiar pickup behavior. That is, if a chip of a relatively large size (for example, 8 mm in length x 6 mm in width) is a pickup target, even if the adhesive force of the pressure-sensitive adhesive layer is lowered to such a degree that excellent pickup properties can be achieved, when the pickup object is a small chip, pickup property The phenomenon that this becomes insufficient has occurred. MEANS TO SOLVE THE PROBLEM As a result of earnestly examining the main factor, in the case of a small chip, the present inventors acquired the knowledge that peeling of the edge of a chip|tip from the adhesive layer (henceforth "edge peeling") is a dominant factor of pick-up property.

According to the examination of the present inventors, in the case of a chip of a relatively large size, it is estimated that peeling of the interface between the chip surface and the pressure-sensitive adhesive layer (hereinafter referred to as "interface peeling") rather than the edge of the chip is the dominant factor in pickup properties. ^{That is, when a large chip (for example, an area in a plane view exceeds 20 mm 2} ) is picked up by pushing up the center of the chip from below with the pin of the push-up jig, as the pin is raised, the chip Although the interfacial peeling of the adhesive layer and the adhesive piece advances from the edge of the Mistakes are easy to occur. That is, the pick-up property of the large chip is mainly governed by the interfacial peeling of the pressure-sensitive adhesive layer and the adhesive piece, and the present inventors have found that the adhesive force of the pressure-sensitive adhesive layer should be set to a value as small as possible (for example, less than 1.2 N/25 mm).

On the other hand, the pick-up property of the small chip is mainly governed by the edge peel strength of the chip with the adhesive piece, and once the peeling of the edge occurs by pushing up with a pin, thereafter, the interface peeling between the pressure-sensitive adhesive layer and the adhesive piece proceeds smoothly. The inventors found out. For this reason, even if the adhesive force of an adhesive layer is comparatively strong, in the case of a small chip, the outstanding pick-up property can be achieved. Moreover, since the adhesive force of an adhesive layer is comparatively strong, the DAF fluttering in a dicing process can fully be suppressed.

As a result of the present inventors further examining, when the adhesive force of the adhesive layer with respect to an adhesive bond piece exceeds 3.0 N/25 mm, even if it is a small chip, it will become difficult to advance interface peeling, and the knowledge that pick-up errors will tend to increase was acquired. Based on this knowledge, the present inventors discovered that the more outstanding pick-up property was obtained by making the adhesive force of an adhesive layer 3.0 N/25 mm or less, suppressing edge peeling strength to 1.2 N or less.

The present disclosure provides an evaluation method and a selection method for a dicing and die-bonding integrated film in consideration of the effects of edge peeling and interfacial peeling of small chips (area 9 mm ^{2 or less).} Further, the present disclosure provides a pick-up property evaluation method in consideration of the effects of edge peeling and interfacial peeling of small chips, a dicing and die-bonding integrated film excellent in pick-up properties of small chips, and a method of manufacturing a semiconductor device using the same.

One aspect of the present disclosure relates to a method for evaluating a dicing die-bonding integrated film. This evaluation method is for evaluating the pick-up property of a dicing and die-bonding integrated film applied to a semiconductor device manufacturing process including a step of dividing a wafer into a plurality of chips with an ^{area of 9 mm 2 or less.} This evaluation method includes the following steps (A) to (E), the peel strength (adhesive force of the pressure-sensitive adhesive layer) measured in the step (B) is 3.0 N/25 mm or less, and the edge measured in the step (E) When the peeling strength is 1.2N or less, it is judged that the dicing and die-bonding integrated film has good pickup properties.

(A) A die for evaluation comprising a base layer, a pressure-sensitive adhesive layer having a first face facing the base layer and a second face on the opposite side, and an adhesive layer provided to cover the central portion of the second face of the pressure-sensitive adhesive layer Process of preparing single die-bonding integrated film

(B) The 1st measurement process of measuring the peeling strength of the adhesive layer from an adhesive bond layer on conditions of 30 degrees peeling angle and 60 mm/min of peeling speed|rate in temperature 23 degreeC

(C) A step of pasting a silicon wafer having a thickness of 50 μm to the adhesive layer of the dicing and die-bonding integrated film and attaching a dicing ring to the second surface of the pressure-sensitive adhesive layer

(D) A step of dividing the silicon wafer and the adhesive layer into a plurality of chips with adhesive pieces to obtain a square chip with an adhesive piece having a side length of 2 mm

(E) A second measurement of measuring the edge peel strength when the edge of the chip with an adhesive piece is peeled from the pressure-sensitive adhesive layer by press-fitting the central portion of the chip with an adhesive piece at a speed of 60 mm/min from the substrate layer side at a temperature of 23°C process

According to the examination of the present inventors, a measurement result with sufficiently high reproducibility can be obtained by measuring the edge peeling strength under the above-mentioned conditions (the thickness of a silicon wafer, the size of a chip|tip with an adhesive bond piece, etc.). Moreover, good or bad interfacial peelability can be judged by measuring the peeling strength of the adhesive layer from an adhesive bond layer on the conditions of 30 degrees of peeling angle. Therefore, the pick-up property of the dicing and die-bonding integrated film can be evaluated efficiently, even if it does not actually pick-up by the die bonder apparatus used for manufacture of a semiconductor device. This evaluation method is useful, for example, in that a dicing/die-bonding integrated film suitable for a new manufacturing process can be efficiently selected when there is any change in the manufacturing process of the semiconductor device.

One aspect of the present disclosure may evaluate pickup properties in a semiconductor device manufacturing process using a dicing die-bonding integrated film. This evaluation method includes the following steps.

(i) a die for evaluation comprising a base layer, a pressure-sensitive adhesive layer having a first face facing the base layer and a second face on the opposite side, and an adhesive layer provided to cover the central portion of the second face of the pressure-sensitive adhesive layer Process of preparing single die-bonding integrated film

(ii) A first measurement step of measuring the peel strength of the pressure-sensitive adhesive layer from the adhesive layer under the condition of a peel angle of 30°

(iii) A step of attaching a wafer with a thickness of 10 to 100 μm to the adhesive layer of the dicing and die-bonding integrated film, and attaching a dicing ring to the second surface of the pressure-sensitive adhesive layer

(iv) step of dividing the wafer and the adhesive layer into chips with an adhesive piece having an ^{area of 9 mm 2 or less}

(v) the second measurement step of measuring the edge peeling strength when the edge of the chip with the adhesive piece is peeled from the pressure-sensitive adhesive layer by press-fitting the central portion of the chip with the adhesive piece from the base layer side

One aspect of the present disclosure relates to a dicing die-bonding integrated film. This dicing and die-bonding integrated film has a base layer, a pressure-sensitive adhesive layer having a first surface facing the base layer and a second surface on the opposite side, and an adhesive layer provided to cover the central portion of the second surface of the pressure-sensitive adhesive layer is provided, and the peel strength of the pressure-sensitive adhesive layer from the adhesive layer, measured under the conditions of a peel angle of 30° and a peel rate of 60 mm/min at a temperature of 23° C., is 3.0 N/25 mm or less, and an edge measured through the following steps Peel strength is 1.2N or less.

<Measurement of edge peel strength>

- A process of pasting a dicing ring to the second surface of the pressure-sensitive adhesive layer while attaching a 50 µm-thick silicon wafer to the pressure-sensitive adhesive layer

A step of dividing the silicon wafer and the adhesive layer into a plurality of chips with adhesive pieces to obtain a square chip with an adhesive piece having a side length of 2 mm

The process of measuring the edge peeling strength when the edge of the chip|tip with an adhesive bond piece peels from the adhesive layer by press-fitting the center part of the chip|tip with an adhesive bond piece at a speed|rate of 60 mm/min from the base material layer side at the temperature of 23 degreeC

The dicing die-bonding integrated film has an edge peel strength of a chip with an adhesive piece (size: 2 mm × 2 mm) of 1.2 N or less, and a peel strength of the adhesive layer from the adhesive layer is 3.0 N/25 mm or less, so that the area In a semiconductor device manufacturing process including a step of separating a wafer into a plurality of chips of 9 mm ^{2 or less, excellent pickup properties can be achieved.}

When the adhesive layer is divided into pieces together with the wafer by blade dicing, burrs tend to occur at the edge of the adhesive layer, and the edge peeling strength of the chip with the adhesive piece tends to increase. The dicing and die-bonding integrated film preferably satisfies the conditions of edge peel strength and interfacial peel strength of chips with adhesive pieces, respectively, even when a plurality of chips with adhesive pieces are obtained by blade dicing. In order for the dicing die-bonding integrated film to satisfy these conditions, for example, the following technical means may be suitably employ|adopted.

· The machinability of the adhesive layer at the time of blade dicing is improved by making the adhesive layer relatively high in viscosity (high elasticity) or thin (for example, 60 µm or less).

- By changing the quantity of the component (for example, a crosslinking agent or a photoinitiator) of an adhesive layer, an adhesive layer is made relatively highly elastic, or adhesive force is adjusted.

· Decrease the elongation at break of the base layer.

· The pressure-sensitive adhesive layer is thickened (for example, 30 µm or more) so as not to cut to the base layer during blade dicing.

One aspect of the present disclosure relates to a method of manufacturing a semiconductor device. This manufacturing method includes the steps of preparing the dicing and die-bonding integrated film, and attaching a wafer to the adhesive layer of the dicing and die-bonding integrated film, and attaching a dicing ring to the second surface of the pressure-sensitive adhesive layer A step of separating the wafer and the adhesive layer into ^{a plurality of chips with an adhesive piece having an area of 9 mm 2} or less, a step of picking up the chip with an adhesive piece from the pressure-sensitive adhesive layer, and placing the chip with an adhesive piece onto a substrate or other chip. It includes the process of mounting to According to the manufacturing method of this semiconductor device, the outstanding pick-up property of the chip|tip with an adhesive bond piece can be achieved, and a semiconductor device can be manufactured with a sufficiently high yield.

One aspect of the present disclosure relates to a method for screening a dicing die-bonding integrated film. According to the following screening method, a dicing and die-bonding integrated film capable of manufacturing a semiconductor device with high yield can be efficiently selected. A first aspect of the screening method for a dicing and die-bonding integrated film includes a base layer, a pressure-sensitive adhesive layer having a first face facing the base layer and a second face on the opposite side, and a central portion of the second face of the pressure-sensitive adhesive layer A step of preparing two or more types of dicing and die-bonding integrated films each having an adhesive layer provided to cover and comparing the strengths.

A second aspect of the screening method for a dicing and die-bonding integrated film includes a substrate layer, a pressure-sensitive adhesive layer having a first surface facing the substrate layer and a second surface on the opposite side, and a central portion of the second surface of the pressure-sensitive adhesive layer a plurality of adhesive layers each having an adhesive layer provided to cover It includes a process of preparing a dicing and die-bonding integrated film, and a process of inspecting whether the edge peeling strength measured through the following process for the plurality of dicing and die-bonding integrated films is 1.2N or less.

<Measurement of edge peel strength>

- A process of pasting a dicing ring to the second surface of the pressure-sensitive adhesive layer while attaching a 50 µm-thick silicon wafer to the pressure-sensitive adhesive layer

A step of dividing the silicon wafer and the adhesive layer into a plurality of chips with adhesive pieces to obtain a square chip with an adhesive piece having a side length of 2 mm

The process of measuring the edge peeling strength when the edge of the chip|tip with an adhesive bond piece peels from the adhesive layer by press-fitting the center part of the chip|tip with an adhesive bond piece at a speed|rate of 60 mm/min from the base material layer side at the temperature of 23 degreeC

According to the present disclosure, an evaluation method and a selection method of a dicing and die-bonding integrated film in consideration of the effects of edge peeling and interfacial peeling of small ^{chips (area 9 mm 2 or less) are provided.} Further, according to the present disclosure, a method for evaluating pick-up properties in consideration of the effects of edge peeling and interfacial peeling of small chips, a dicing and die-bonding integrated film having excellent pick-up properties of small chips, and a method for manufacturing a semiconductor device using the same are provided.

In Fig. 1, Fig. 1(a) is a plan view showing one embodiment of a dicing and die-bonding integrated film, and Fig. 1(b) is a schematic cross-sectional view taken along line BB shown in Fig. 1(a).
In FIG. 2, FIG.2(a) - FIG.2(c) are sectional drawing which shows typically the process of measuring edge peeling strength.
3 is a graph showing an example of the relationship between the displacement (mm) and the pressing force (N) by pressing.
Fig. 4 is a plan view schematically showing a state in which a mark is placed at a position corresponding to the central portion of a chip to be measured.
It is a top view which shows typically an example of the measurement area of edge peeling strength.
It is sectional drawing which shows typically a mode that the 30 degree peeling strength of the adhesive layer with respect to an adhesive bond layer is being measured.
7 is a schematic cross-sectional view of an embodiment of a semiconductor device.
8(a) to 8(d) are cross-sectional views schematically illustrating a process of manufacturing a chip with an adhesive piece.
9 is a cross-sectional view schematically illustrating a process of manufacturing the semiconductor device shown in FIG. 7 .
FIG. 10 is a cross-sectional view schematically illustrating a process of manufacturing the semiconductor device shown in FIG. 7 .
11 is a cross-sectional view schematically illustrating a process of manufacturing the semiconductor device shown in FIG. 7 .

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this indication is described in detail, referring drawings. However, this invention is not limited to the following embodiment. In addition, in this specification, "(meth)acrylic acid" means acrylic acid or methacrylic acid, and "(meth)acrylate" means an acrylate or a methacrylate corresponding to it. "A or B" may include either one of A and B, and may include both.

In the present specification, the term "layer" includes a structure of a shape formed in a part in addition to a structure of a shape formed on the entire surface when viewed as a plan view. In addition, in the present specification, the term "step" is included in this term as long as the desired action of the step is achieved even if it is not clearly distinguishable from other steps as well as independent steps. In addition, the numerical range indicated using "-" shows the range which includes the numerical value described before and after "-" as a minimum value and a maximum value, respectively.

In the present specification, the content of each component in the composition means the total amount of the plurality of substances present in the composition, unless otherwise specified, when a plurality of substances corresponding to each component exist in the composition. In addition, unless otherwise indicated, an example material may be used independently and may be used in combination of 2 or more type. In addition, in the numerical range described step by step in this specification, the upper limit or lower limit of the numerical range of a predetermined step may be substituted with the upper limit or lower limit of the numerical range of another step. In addition, in the numerical range described in this specification, you may substitute the upper limit or lower limit of the numerical range with the value shown in an Example.

<Dicing and die-bonding integrated film>

Fig. 1 (a) is a plan view showing the dicing and die-bonding integrated film according to the present embodiment, and Fig. 1 (b) is a schematic cross-sectional view taken along line BB in Fig. 1 . The dicing and die-bonding integrated film 10 (hereinafter, simply referred to as "film 10" in some cases) includes a dicing process of dividing the wafer W into a plurality of chips with an ^{area of 9 mm 2 or less;} It is applied to the manufacturing process of the semiconductor device including the pick-up process after that (refer FIGS. 8(c) and 8(d)).

The film 10 has a base material layer 1, a pressure-sensitive adhesive layer 3 having a first surface F1 facing the base material layer 1 and a second surface F2 opposite thereto, and an pressure-sensitive adhesive layer ( The adhesive layer 5 provided to cover the central part of the 2nd surface F2 of 3) is provided in this order. In this embodiment, although the square base material layer 1 was illustrated, the base material layer 1 is circular, and the same size as the adhesive layer 3 may be sufficient. In addition, in this embodiment, although the aspect in which one laminated body of the adhesive layer 3 and the adhesive bond layer 5 was formed on the base material layer 1 was illustrated, the base material layer 1 has a predetermined length (for example, For example, 100 m or more), and the laminated body of the adhesive layer 3 and the adhesive bond layer 5 may be arrange|positioned at predetermined intervals so that it may be aligned in the longitudinal direction.

The film 10 has an edge peel strength of 1.2N or less. Edge peeling strength is measured through the following process. The upper limit of the edge peeling strength of the film 10 may be 1.1N or 0.9N, and a lower limit may be 0.1N, for example, and 0.15N or 0.2N may be sufficient as it.

<Measurement of edge peel strength>

- A process of attaching a dicing ring DR to the second surface F2 of the pressure-sensitive adhesive layer 3 while attaching a silicon wafer Ws with a thickness of 50 μm to the adhesive layer 5 (Fig. 2(a)) Reference)

· A step of dividing the silicon wafer Ws and the adhesive layer 5 into a plurality of chips Ta with adhesive pieces (hereinafter, simply referred to as “chips Ta” in some cases) (see Fig. 2(b)) )

· At a temperature of 23° C., the central portion of the chip Ta is press-fitted from the base layer 1 side at a speed of 60 mm/min (refer to FIG. 2(c) ), and the edge of the chip Ta is peeled from the pressure-sensitive adhesive layer 3 The process of measuring the edge peel strength when

When the edge peeling strength of the film 10 is within the above range, ^{it can be evaluated that the film 10 is suitable for a dicing process in which a wafer is divided into a plurality of small chips having an area of 9 mm 2} or less, and a pick-up process thereafter.

As shown in FIG.2(b), the chip|tip Ta is comprised by the chip|tip Ts and the adhesive bond piece 5p. The step of dividing the silicon wafer Ws and the adhesive layer 5 into a plurality of chips Ta may be performed, for example, by blade dicing under the following conditions.

<Dicing conditions>

・Dicer: DFD6361 (manufactured by Disco Co., Ltd.)

・Blade: ZH05-SD4000-N1-70-BB (manufactured by Disco Co., Ltd.)

・Blade rotation speed: 40000rpm

Dicing speed: 30mm/sec

·Blade height: 90μm

・Cutting depth from the surface of the adhesive layer 3: 20 μm

・The shape of the chip Ta in a plan view: a square of 2 mm × 2 mm

As the type of blade, in order to secure the processing quality of the chip and to suppress chips (burrs) generated from the substrate layer 1, etc., if it is a blade made by Disco Co., Ltd., a fine blade with a particle diameter of #4000 to #4800 It is preferable to use

The reason for using a silicon wafer (Ws) having a thickness of 50 µm is as follows. For example, when the thickness of a silicon wafer is 30 micrometers or less, when it separates into pieces by blade dicing, it becomes easy to generate|occur|produce problems, such as chip|tip cracking and chip cracking. In addition, there exists a possibility that a chip|tip may crack at the time of the measurement of edge peeling strength. On the other hand, for example, when the thickness of a silicon wafer is 80 μm or more, when it is divided into pieces by blade dicing, step cutting may have to be applied, making it difficult to select a blade and set conditions. In addition to this, if the chip is thick, since the chip is less likely to warp in the measurement of the edge peel strength, there is a possibility that the peelability of the edge becomes good and the difference between the films becomes difficult to appear. Moreover, since thinning of a semiconductor wafer is advancing in recent years, a 50 micrometer-thick silicon wafer is used also in the meaning of matching with a market trend.

The reason for making the size of the chip|tip Ta with an adhesive bond piece into 2 mm x 2 mm is as follows. For example, when the size of the chip Ta with an adhesive piece is 1 mm x 1 mm, since the distance between the center part of the chip (the point where pressing force is applied to the chip) and the edge is excessively close, the peelability of the edge becomes good. There is a possibility that the difference between the films will be difficult to show. In addition, since the chip is too small, it is difficult to mark the central part of the chip, and there is a possibility that a measurement error may occur due to a positional shift with the naked eye without marking. On the other hand, for example, when the size of the chip Ta with the adhesive piece is 3 mm x 3 mm, when the peel strength of the chip edge portion is measured, the distance between the center portion and the edge portion of the chip is excessively separated. This becomes difficult to transmit, and it is difficult to accurately measure the edge peel strength. In addition to this, a large press-in amount is required to peel the edge, and there is a fear that the chip is greatly warped in accordance with this, and chip cracks occur during measurement.

The process of measuring edge peeling strength WHEREIN: As shown to FIG.2(c), the center part of the chip|tip Ta is press-fitted with the press-fitting jig|tool P from the base material layer 1 side. For example, what is necessary is just to measure edge peeling strength under the following conditions using the following apparatus etc.

<Measurement conditions>

・Measuring device: EZ-SX small tabletop tester (manufactured by Shimadzu Corporation)

Load cell: 50N

・Pressure jig: Attachment attached to the ZTS series (shape: conical, manufactured by Imada Co., Ltd.)

·Indentation speed: 60mm/min

・Temperature: 23℃

Humidity: 45±10%

3 is a graph showing an example of the relationship between the displacement (mm) and the pressing force (N) by pressing. When the edge of the chip is peeled off, as shown in Fig. 3 , the pressing force temporarily decreases, and a change point occurs in the graph. Let the value of the pressing force in this change point be edge peeling strength.

When measuring the edge peeling strength, it is preferable to mark using an oil pen etc. in the position corresponded to the center part of the chip|tip Ta in the base material layer 1. By marking in advance, while it becomes possible to measure with high precision, positioning becomes easy and measurement efficiency improves.

The reason why the press-in speed was set to 60 mm/min is as follows. That is, the press-in speed is preferably 60 to 1200 mm/min (1 to 20 mm/sec) in the sense of matching with the actual pickup conditions. There is a possibility that a pressing force is applied to the sample more than necessary during the time period, peeling off even the chips around the chip to be measured, or the substrate layer being damaged, which may adversely affect subsequent measurements. Therefore, the press-in speed of as low as possible was selected within the above-mentioned range.

It is preferable to measure the edge peeling strength with respect to the some chip|tip Ta, and to make the average of the some measured value into the edge peeling strength of the film 10. For example, what is necessary is just to measure about 5 or more (preferably 10-20 pieces) of chips Ta, and to calculate the average value. When the edge peel strength of the second chip Ta is measured after measuring the edge peel strength of the first chip Ta, press-fitting into the first chip Ta does not affect the second chip Ta. To avoid this, it is preferable that the second chip Ta is sufficiently spaced apart from the first chip Ta. For example, it is preferable that there are two or more chips Ta between the first chip Ta and the second chip Ta. Fig. 4 is a plan view schematically showing a state in which a mark M is affixed at a position corresponding to the central portion of a chip to be measured. In this figure, an interval of three chips is spaced between two chips Ta to be measured.

When the silicon wafer Ws is a 12-inch wafer, it is preferable to measure a plurality of chips Ta in the measurement area A shown in FIG. 5 . That is, as shown in FIG. 5, when the position of the notch N of the dicing ring DR is made above the paper surface, a distance of 50 mm is floated from the lower edge part of the silicon wafer Ws, and 80 mm x It is preferable to measure in an area within 20 mm. Since there is a difference in the tension of the base layer 1 and the elongation of the base layer 1 at the time of press-fitting at the end and the center of the silicon wafer Ws, there is a possibility that the measured value varies depending on the position. The same settings as those of the measurement area may be applied even to the case of an 8-inch wafer. In addition, the measurement area A is not limited to the position shown in FIG. 5, For example, if a predetermined distance is floated from the edge part of the wafer Ws, the upper side, the left side, or the right side in FIG. 5 may be sufficient.

In addition, you may evaluate pick-up property by actually picking-up with respect to the same sample using the die bonder apparatus other than evaluation of the pick-up property by the measurement of edge peeling strength. In this case, it is preferable to first measure the edge peel strength. Pick-up using a die bonder apparatus is performed in the state which expanded the base film normally. After canceling the expanded state, the sagging of the base material layer 1 by expansion may not return, and there exists a possibility that it may become difficult to measure edge peeling strength with good precision.

The adhesive force of the 1st area|region 3a with respect to the adhesive bond layer 5 is 3.0 N/25 mm or less. The upper limit of this adhesive force may be 2.75N/25mm or 2.5N/25mm. This adhesive force is the 30 degree peeling strength measured on the conditions of 30 degrees peeling angle and 60 mm/min of peeling rates in the temperature of 23 degreeC. 6 is a cross-sectional view schematically showing a state in which the 30° peeling strength of the pressure-sensitive adhesive layer 3 is measured in a state in which the adhesive layer 5 of the measurement sample (width 25 mm × length 100 mm) is fixed to the support plate 80 . . By making the adhesive force (30 degree peeling strength) of the 1st area|region 3a with respect to the adhesive bond layer 5 into the said range, the outstanding pick-up property can be achieved and it becomes possible to manufacture a semiconductor device with a sufficiently high yield. It is preferable that this adhesive force is 1.2 N/25 mm or more from a viewpoint of suppressing the DAF fluttering at the time of dicing.

Next, each layer which comprises a dicing die-bonding integrated film is demonstrated.

(substrate layer)

As the base material layer 1, a known polymer sheet or film can be used, and even under low-temperature conditions, if the expand process can be performed, there will be no restriction|limiting in particular. Specifically, as the polymer constituting the base layer 1, crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polyview Polyolefin such as tene and polymethylpentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, Ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyester such as polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic poly Amide, polyphenylsulfide, aramid (paper), glass, glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, or a mixture of these with a plasticizer, or electron beam The hardened|cured material which bridge|crosslinked by irradiation is mentioned.

The base material layer (1) has a surface mainly comprising at least one resin selected from polyethylene, polypropylene, polyethylene-polypropylene random copolymer, and polyethylene-polypropylene block copolymer, this surface and the pressure-sensitive adhesive layer (3) ) is preferably in contact. These resins are good base materials also from a viewpoint of characteristics, such as a Young's modulus, stress relaxation property, melting|fusing point, a price point, waste material recycling after use, etc. Although a single layer may be sufficient as the base material layer 1, it may have a multilayer structure in which the layers which consist of different materials were laminated|stacked as needed. In order to control adhesiveness with the adhesive layer 3, you may perform surface roughening processes, such as a matting process and a corona treatment, with respect to the surface of the base material layer 1. The thickness of the base material layer 1 may be 10-200 micrometers, for example, and 20-180 micrometers or 30-150 micrometers may be sufficient as it.

(Adhesive layer)

The adhesive layer 3 surrounds the 1st area|region 3a which contains at least the area|region Rw corresponding to the pasting position of the silicon wafer Ws in the adhesive bond layer 5, and the 1st area|region 3a, It has a second region 3b positioned so as to The broken line in FIG.1(a) and FIG.1(b) shows the boundary of the 1st area|region 3a and the 2nd area|region 3b. The 1st area|region 3a and the 2nd area|region 3b consist of the same composition before irradiation of an active energy ray. The 1st area|region 3a is an area|region in the state in which adhesive force fell compared with the 2nd area|region 3b by irradiating active energy rays, such as an ultraviolet-ray. The second region 3b is a region to which the dicing ring DR is affixed (refer to Fig. 2(a)). The second region 3b is a region not irradiated with an active energy ray, and has high adhesion to the dicing ring DR.

What is necessary is just to set the thickness of the adhesive layer 3 suitably according to the conditions (temperature, tension|tensile_strength, etc.) of an expand process, for example, it is 1-200 micrometers, 5-50 micrometers, or 15-45 micrometers may be sufficient as it. When the thickness of the pressure-sensitive adhesive layer 3 is less than 1 µm, the adhesiveness tends to be insufficient, and when it exceeds 200 µm, the cuff width becomes narrow at the time of expansion (stress is relieved at the time of pushing up the pin), and the pickup tends to be insufficient. .

The 1st area|region 3a has the adhesive force of the said range (3.0N/25mm or less) with respect to the adhesive bond layer 5, and is formed by irradiation of an active energy ray. The present inventors discovered that reducing the adhesive force of the adhesive layer 3 by irradiation of an active energy ray affected the edge peeling strength of a chip|tip with an adhesive bond piece. That is, if the adhesive force of the first region 3a is excessively lowered by irradiation with active energy rays, the 30° peeling strength of the first region 3a with respect to the adhesive layer 5 is lowered, while the pick-up object is a small chip. In the case of , the edge of the chip with the adhesive piece tends to be difficult to peel, the chip is excessively deformed, and cracks or pick-up errors are likely to occur. It is preferable that the adhesive force of the first region 3a to the adhesive layer 5 does not excessively decrease the adhesive force before irradiation with an active energy ray, so that even a chip with an adhesive piece having an ^{area of 9 mm 2 or less,} The edge becomes easy to peel from the adhesive layer 3 (1st area|region 3a). In this embodiment, the adhesive force of the 1st area|region 3a of the adhesive layer 3 is adjusted by making comparatively little quantity of the crosslinking agent in the adhesive layer 3, or reducing the irradiation amount of an active energy ray, for example. can

The adhesive force of the second region 3b to the stainless substrate is preferably 0.2 N/25 mm or more. This adhesive force is a 90 degree peeling strength measured on the conditions of 90 degrees peeling angle and 50 mm/min of peeling rates in the temperature of 23 degreeC. When this adhesive force is 0.2 N/25 mm or more, ring peeling at the time of dicing can fully be suppressed. The lower limit of this adhesive force may be 0.3 N/25 mm or 0.4 N/25 mm, and an upper limit may be 2.0 N/25 mm, for example, and 1.0 N/25 mm may be sufficient as it.

The adhesive layer before active energy ray irradiation consists of an adhesive composition containing (meth)acrylic-type resin, a photoinitiator, and a crosslinking agent, for example. The second region 3b to which the active energy ray is not irradiated has the same composition as the pressure-sensitive adhesive layer before irradiated with the active energy ray. Hereinafter, the component contained in an adhesive composition is demonstrated in detail.

[(meth)acrylic resin]

The pressure-sensitive adhesive composition contains a (meth)acrylic resin having a functional group capable of chain polymerization, and it is preferable that the functional group is at least one selected from an acryloyl group and a methacryloyl group. Content of the said functional group in the adhesive layer before active energy ray irradiation is 0.1-1.2 mmol/g, for example, and 0.3-1.0 mmol/g or 0.5-0.8 mmol/g may be sufficient as it. When content of the said functional group is 0.1 mmol/g or more, it is easy to form the area|region (1st area|region 3a) in which adhesive force fell moderately by irradiation of an active energy ray, On the other hand, when it is 1.2 mmol/g or less, excellent pick-up property easy to achieve

(meth)acrylic resin can be obtained by synthesize|combining by a known method. Examples of the synthesis method include a solution polymerization method, a suspension polymerization method, an emulsion polymerization method, a bulk polymerization method, a precipitation polymerization method, a gas phase polymerization method, a plasma polymerization method, and a supercritical polymerization method. Examples of the polymerization reaction include radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, coordination polymerization, immortal polymerization, etc., ATRP (atom transfer radical polymerization) and RAFT (reversible addition cleavage) chain transfer polymerization) can also be mentioned. Among these, synthesis by radical polymerization using the solution polymerization method has advantages such as good economic feasibility, high reaction rate, ease of polymerization control, and the like, as well as being able to blend the resin solution obtained by polymerization as it is.

Here, the method of obtaining a (meth)acrylic-type resin by radical polymerization using a solution polymerization method is taken as an example, and the synthesis method of a (meth)acrylic-type resin is demonstrated in detail.

There is no restriction|limiting in particular as long as it has one (meth)acryloyl group in 1 molecule as a monomer used when synthesize|combining (meth)acrylic-type resin. Specific examples thereof include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, butoxyethyl (meth) acrylate , isoamyl (meth) acrylate, hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, heptyl (meth) acrylate, octyl heptyl (meth) acrylate, nonyl (meth) acrylate, decyl ( Meth) acrylate, undecyl (meth) acrylate, lauryl (meth) acrylate, tridecyl (meth) acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) Acrylate, stearyl (meth)acrylate, behenyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol aliphatic (meth)acrylates such as (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, and mono(2-(meth)acryloyloxyethyl)succinate; Cyclopentyl (meth) acrylate, cyclohexyl (meth) acrylate, cyclopentyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, isobornyl (meth) alicyclic (meth)acrylates such as acrylate, mono(2-(meth)acryloyloxyethyl)tetrahydrophthalate, and mono(2-(meth)acryloyloxyethyl)hexahydrophthalate; Benzyl (meth) acrylate, phenyl (meth) acrylate, o-biphenyl (meth) acrylate, 1-naphthyl (meth) acrylate, 2-naphthyl (meth) acrylate, phenoxyethyl (meth) Acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxy Cypolyethylene glycol (meth)acrylate, nonylphenoxypolyethylene glycol (meth)acrylate, phenoxypolypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth) Acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, 2-hydroxy-3 Aromatic (meth)acrylates, such as -(2-naphthoxy)propyl (meth)acrylate; Heterocyclic (meth) such as 2-tetrahydrofurfuryl (meth) acrylate, N- (meth) acryloyloxyethyl hexahydrophthalimide, and 2- (meth) acryloyloxyethyl-N-carbazole ) acrylates, caprolactone-modified products thereof, ω-carboxy-polycaprolactone mono (meth) acrylate, glycidyl (meth) acrylate, α-ethyl glycidyl (meth) acrylate, α-propyl glycol Cydyl (meth) acrylate, α-butyl glycidyl (meth) acrylate, 2-methylglycidyl (meth) acrylate, 2-ethyl glycidyl (meth) acrylate, 2-propyl glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4- compounds having an ethylenically unsaturated group and an epoxy group, such as epoxycyclohexylmethyl (meth)acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether; (2-ethyl-2-oxetanyl)methyl (meth)acrylate, (2-methyl-2-oxetanyl)methyl (meth)acrylate, 2-(2-ethyl-2-oxetanyl)ethyl (meth)acrylate, 2-(2-methyl-2-oxetanyl)ethyl (meth)acrylate, 3-(2-ethyl-2-oxetanyl)propyl (meth)acrylate, 3-(2 a compound having an ethylenically unsaturated group and an oxetanyl group, such as -methyl-2-oxetanyl)propyl (meth)acrylate; compounds having an ethylenically unsaturated group and an isocyanate group such as 2-(meth)acryloyloxyethyl isocyanate; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 3-chloro-2-hydroxypropyl (meth) acrylate, 2- The compound which has ethylenically unsaturated groups, such as hydroxybutyl (meth)acrylate, and a hydroxyl group is mentioned, These can combine suitably, and the target (meth)acrylic-type resin can be obtained.

The (meth)acrylic resin preferably has at least one functional group selected from a hydroxyl group, a glycidyl group and an amino group as a reaction point with a functional group-introducing compound or a crosslinking agent described later. As a monomer for synthesizing a (meth)acrylic resin having a hydroxyl group, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 3- The compound which has ethylenically unsaturated groups, such as chloro-2-hydroxypropyl (meth)acrylate and 2-hydroxybutyl (meth)acrylate and a hydroxyl group is mentioned, These are single 1 type or 2 types The above can be used together.

As a monomer for synthesizing a (meth)acrylic resin having a glycidyl group, glycidyl (meth)acrylate, α-ethylglycidyl (meth)acrylate, α-propylglycidyl (meth)acrylate, α-butyl glycidyl (meth) acrylate, 2-methylglycidyl (meth) acrylate, 2-ethyl glycidyl (meth) acrylate, 2-propyl glycidyl (meth) acrylate, 3, 4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acryl and compounds having an ethylenically unsaturated group and an epoxy group, such as lactate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether. It is independent or can use 2 or more types together.

It is preferable that the (meth)acrylic-type resin synthesize|combined from these monomers contains the functional group which can be chain-polymerized. The functional group capable of chain polymerization is at least one selected from, for example, an acryloyl group and a methacryloyl group. The functional group capable of chain polymerization can be introduced into the (meth)acrylic resin by, for example, reacting the following compound (functional group-introducing compound) with the (meth)acrylic resin synthesized as described above. Specific examples of the functional group-introducing compound include 2-methacryloyloxyethyl isocyanate, meta-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate cyanate, 1,1-(bisacryloyloxymethyl)ethylisocyanate; The acryloyl monoisocyanate compound obtained by reaction of a diisocyanate compound or a polyisocyanate compound, and hydroxyethyl (meth)acrylate or 4-hydroxybutylethyl (meth)acrylate ; The acryloyl monoisocyanate compound etc. which are obtained by reaction of a diisocyanate compound or a polyisocyanate compound, a polyol compound, and hydroxyethyl (meth)acrylate are mentioned. Among these, 2-methacryloyloxyethyl isocyanate is especially preferable. These compounds may be used individually by 1 type, and may be used in combination of 2 or more type.

(meth)acrylic resin has a weight average molecular weight (Mw) of, for example, 100,000-2 million or more, Preferably it is 150,000-1 million, More preferably, it is 200,000-800,000. When the weight average molecular weight (Mw) of the (meth)acrylic resin is within such a range, it is possible to form the pressure-sensitive adhesive layer 3 having excellent adhesiveness and few low molecular weight components to prevent contamination of the adherend.

The hydroxyl value of (meth)acrylic-type resin becomes like this. Preferably it is 10-150 mgKOH/g, More preferably, it is 20-100 mgKOH/g. When the hydroxyl value of (meth)acrylic resin is the said range, the effect that the peeling force after reaction of the functional group which can adjust an initial stage adhesive force by reaction with a crosslinking agent and can be chain-polymerized can be shown appears.

[Photoinitiator]

The photopolymerization initiator is not particularly limited as long as it generates active species capable of chain polymerization by irradiating active energy rays (at least one selected from ultraviolet rays, electron beams and visible rays), and examples include photoradical polymerization initiators. . Here, the active species capable of chain polymerization means that a polymerization reaction is initiated by reacting with a functional group capable of chain polymerization.

As a photo-radical polymerization initiator, Benzoin ketals, such as 2, 2- dimethoxy-1,2- diphenylethan-1-one; 1-Hydroxycyclohexylphenylketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2- α-hydroxyketones such as methyl-1-propan-1-one; 2-Benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one, 1,2-methyl-1-[4-(methylthio)phenyl]-2-morphol α-aminoketones such as nopropan-1-one; oxime esters such as 1-[4-(phenylthio)phenyl]-1,2-octadione-2-(benzoyl)oxime; Bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, 2,4,6-trimethyl Phosphine oxides, such as a benzoyl diphenyl phosphine oxide; 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o-chlorophenyl)-4,5-di(methoxyphenyl)imidazole dimer, 2-(o- Fluorophenyl)-4,5-diphenylimidazole dimer, 2-(o-methoxyphenyl)-4,5-diphenylimidazole dimer, 2-(p-methoxyphenyl)-4 2,4,5-triaryl imidazole dimers, such as a , 5- diphenyl imidazole dimer; Benzophenone, N,N'-tetramethyl-4,4'-diaminobenzophenone, N,N'-tetraethyl-4,4'-diaminobenzophenone, 4-methoxy-4'-dimethylamino benzophenone compounds such as benzophenone; 2-ethylanthraquinone, phenanthrenequinone, 2-tert-butylanthraquinone, octamethylanthraquinone, 1,2-benzanthraquinone, 2,3-benzanthraquinone, 2-phenylanthraquinone, 2,3-di Phenylanthraquinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1,4-naphthoquinone, 9,10-phenanthraquinone, 2-methyl-1,4-naphthoquinone, 2,3-dimethyl quinone compounds such as anthraquinone; benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, and benzoin phenyl ether; benzoin compounds such as benzoin, methylbenzoin, and ethylbenzoin; benzyl compounds such as benzyldimethyl ketal; Acridine compounds, such as 9-phenylacridine and 1,7-bis (9,9'- acridinyl heptane): N-phenylglycine and coumarin are mentioned.

Content of the photoinitiator in an adhesive composition is 0.1-30 mass parts with respect to content 100 mass parts of (meth)acrylic-type resin, It is preferable that it is 0.3-10 mass parts, It is more that it is 0.5-5 mass parts desirable. When content of a photoinitiator is less than 0.1 mass part, an adhesive layer becomes insufficient hardening after active energy ray irradiation, and a pickup defect is easy to generate|occur|produce. When content of a photoinitiator exceeds 30 mass parts, the contamination to an adhesive bond layer (transfer to the adhesive bond layer of a photoinitiator) will generate|occur|produce easily.

[crosslinking agent]

A crosslinking agent is used for the purpose of controlling the elastic modulus and/or adhesiveness of an adhesive layer, for example. The crosslinking agent may be a compound having two or more functional groups in one molecule capable of reacting with at least one functional group selected from a hydroxyl group, a glycidyl group, an amino group, and the like of the (meth)acrylic resin. Examples of the bond formed by the reaction of the crosslinking agent with the (meth)acrylic resin include an ester bond, an ether bond, an amide bond, an imide bond, a urethane bond, and a urea bond.

In this embodiment, as a crosslinking agent, it is preferable to employ|adopt the compound which has two or more isocyanate groups in 1 molecule. When such a compound is used, it easily reacts with a hydroxyl group, a glycidyl group, an amino group, and the like of the (meth)acrylic resin to form a strong crosslinked structure.

Examples of the compound having two or more isocyanate groups in one molecule include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, and 1,3-xylene diisocyanate. , 1,4-xylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenyl Methane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4 Isocyanate compounds, such as '- diisocyanate and lysine isocyanate, are mentioned.

As a crosslinking agent, you may employ|adopt the reaction product (isocyanate group containing oligomer) of the isocyanate compound mentioned above and the polyhydric alcohol which has two or more OH groups in 1 molecule. Examples of the polyhydric alcohol having two or more OH groups in one molecule include ethylene glycol, propylene glycol, butylene glycol, 1,6-hexanediol, 1,8-octanediol, 1,9 -None indiol, 1,10-decanediol, 1,11-undecanediol, 1,12-dodecaindiol, glycerin, pentaerythritol, dipentaerythritol, 1,4-cyclohexyl Seindiol and 1,3-cyclohexanediol are mentioned.

Among these, as a crosslinking agent, a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more OH groups in one molecule (isocyanate group-containing oligomer) is a crosslinking agent. more preferably. By using such an isocyanate group-containing oligomer as a crosslinking agent, the pressure-sensitive adhesive layer 3 forms a dense crosslinked structure, thereby sufficiently suppressing adhesion of the pressure-sensitive adhesive to the adhesive layer 5 in the pickup step. .

What is necessary is just to set content of the crosslinking agent in an adhesive composition suitably according to the cohesive force calculated|required with respect to an adhesive layer, elongation at break, adhesiveness with the adhesive bond layer 5, etc. Specifically, content of a crosslinking agent is 2-30 mass parts with respect to content 100 mass parts of (meth)acrylic-type resin, 4-15 mass parts or 7-10 mass parts may be sufficient. By making the content of the crosslinking agent within the above range, it is possible to balance the properties required for the pressure-sensitive adhesive layer in the dicing step and the properties required for the pressure-sensitive adhesive layer 3 in the die bonding step, while achieving excellent pick-up properties. can do.

When content of a crosslinking agent is less than 2 mass parts with respect to content of 100 mass parts of (meth)acrylic-type resin, formation of a crosslinked structure becomes inadequate easily, and it originates in this, and it originates in this, WHEREIN: Interface with adhesive bond layer 5 in a pick-up process Adhesion is not sufficiently reduced, and defects are likely to occur during pickup. On the other hand, when the content of the crosslinking agent exceeds 30 parts by mass with respect to 100 parts by mass of the content of the (meth)acrylic resin, the pressure-sensitive adhesive layer 3 tends to be excessively hard, and due to this, the semiconductor chip peels off in the expand step. easy to become

Content of the crosslinking agent with respect to the total mass of an adhesive composition is 0.1-20 mass %, for example, and 2-17 mass % or 3-15 mass % may be sufficient. When the content of the crosslinking agent is 0.1% by mass or more, it is easy to form a region (the first region 3a) in which the adhesive force is appropriately lowered by irradiation with active energy rays, and on the other hand, when it is 15% by mass or less, excellent pickup properties are achieved. easy.

As a method of forming the pressure-sensitive adhesive layer 3 , a known method can be employed. For example, the laminate of the base material layer 1 and the adhesive layer 3 may be formed by the two-layer extrusion method, the varnish for formation of the adhesive layer 3 is prepared, and this is coated on the surface of the base material layer 1 Alternatively, the pressure-sensitive adhesive layer 3 may be formed on the release-treated film, and this may be transcribed onto the base material layer 1 .

The varnish for formation of the adhesive layer 3 is an organic solvent which can melt|dissolve (meth)acrylic-type resin, a photoinitiator, and a crosslinking agent, It is preferable to prepare using what volatilizes by heating. Specific examples of the organic solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; alcohols such as methanol, ethanol, isopropanol, butanol, ethylene glycol, and propylene glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonate esters such as ethylene carbonate and propylene carbonate; Ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol mono Methyl ether, propylene glycol monoethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether polyhydric alcohol alkyl ethers such as , diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, and diethylene glycol diethyl ether; Ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, polyhydric alcohol alkyl ether acetates such as diethylene glycol monomethyl ether acetate and diethylene glycol monoethyl ether acetate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone.

Among these, from the viewpoint of solubility and boiling point, for example, toluene, methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, ethylene glycol Monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether Acetate, propylene glycol monomethyl ether acetate, N,N-dimethylacetamide, and acetylacetone are preferable. These organic solvents may be used individually by 1 type, and may use 2 or more types together. It is preferable that the solid content concentration of a varnish is 10-60 mass % normally.

(Adhesive layer)

The adhesive composition constituting the known die-bonding film can be applied to the adhesive layer 5 . Specifically, the adhesive composition constituting the adhesive layer 5 preferably contains an epoxy group-containing acrylic copolymer, an epoxy resin, and an epoxy resin curing agent. According to the adhesive layer 5 containing these components, the chip/substrate and chip/chip adhesion are excellent, and electrode embedding properties and wire embedding properties can also be provided. It is preferable because it has characteristics such as excellent hardening in a short time and excellent reliability after molding with a sealant.

The thickness of the adhesive bond layer 5 is 1-300 micrometers, for example, It is preferable that it is 5-150 micrometers, and 10-100 micrometers or 15-35 micrometers may be sufficient as it. If the thickness of the adhesive bond layer 5 is less than 1 micrometer, adhesiveness will become inadequate easily, on the other hand, when it exceeds 300 micrometers, dicing property and pick-up property will tend to become inadequate.

Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolak epoxy resin, cresol novolak epoxy resin, bisphenol A Novolac epoxy resin, diglycidyl ether of biphenol, diglycidyl ether of naphthalenediol, diglycidyl ether of phenol, diglycidyl ether of alcohol and bifunctional epoxy resins, such as alkyl-substituted products, halides, and hydrogenated substances thereof, and novolak-type epoxy resins. Moreover, you may apply other generally known epoxy resins, such as a polyfunctional epoxy resin and a heterocyclic-containing epoxy resin. These can be used individually or in combination of 2 or more types. Moreover, components other than an epoxy resin may be contained as an impurity in the range which does not impair a characteristic.

Examples of the epoxy resin curing agent include a phenol resin obtained by reacting a phenol compound and a xylylene compound serving as a divalent linking group in the presence of a non-catalyst or an acid catalyst. Examples of the phenolic compound used in the production of the phenolic resin include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, p-ethylphenol, on-propylphenol, mn-propylphenol, pn-propylphenol, o-isopropylphenol, m-isopropylphenol, p-isopropylphenol, on-butylphenol, mn-butylphenol, pn-butylphenol, o-isobutylphenol, m-isobutylphenol, p-isobutylphenol , octylphenol, nonylphenol, 2,4-xyleneol, 2,6-xyleneol, 3,5-xyleneol, 2,4,6-trimethylphenol, resorcin, catechol, hydroquinone, 4-methyl Toxyphenol, o-phenylphenol, m-phenylphenol, p-phenylphenol, p-cyclohexylphenol, o-allylphenol, p-allylphenol, o-benzylphenol, p-benzylphenol, o-chlorophenol, p -Chlorophenol, o-bromophenol, p-bromophenol, o-iodophenol, p-iodophenol, o-fluorophenol, m-fluorophenol, p-fluorophenol, etc. are illustrated. These phenolic compounds may be used independently and may mix and use 2 or more types. As a xylylene compound which is a bivalent coupling group used for manufacture of a phenol resin, xylylene dihalide, xylylene diglycol, and its derivative(s) shown below can be used. That is, α,α′-dichloro-p-xylene, α,α′-dichloro-m-xylene, α,α′-dichloro-o-xylene, α,α′-dibromo-p -xylene, α,α'-dibromo-m-xylene, α,α'-dibromo-o-xylene, α,α'-diiodo-p-xylene, α,α'-dia iodo-m-xylene, α,α'-diiodo-o-xylene, α,α'-dihydroxy-p-xylene, α,α'-dihydroxy-m-xylene, α,α′-dihydroxy-o-xylene, α,α′-dimethoxy-p-xylene, α,α′-dimethoxy-m-xylene, α,α′-dimethoxy -o-xylene, α,α'-diethoxy-p-xylene, α,α'-diethoxy-m-xylene, α,α'-diethoxy-o-xylene, α, α′-di-n-propoxy-p-xylene, α,α′-di-n-propoxy-m-xylene, α,α′-di-n-propoxy-o-xylene, α ,α′-di-isopropoxy-p-xylene, α,α′-diisopropoxy-m-xylene, α,α′-diisopropoxy-o-xylene, α,α′- di-n-butoxy-p-xylene, α,α′-di-n-butoxy-m-xylene, α,α′-di-n-butoxy-o-xylene, α,α′ -Diisobutoxy-p-xylene, α,α'-diisobutoxy-m-xylene, α,α'-diisobutoxy-o-xylene, α,α'-di-tert- butoxy-p-xylene, α,α′-di-tert-butoxy-m-xylene, and α,α′-di-tert-butoxy-o-xylene. These can be used individually or in combination of 2 or more types.

When making said phenol compound and xylylene compound react, mineral acids, such as hydrochloric acid, sulfuric acid, phosphoric acid, and polyphosphoric acid; organic carboxylic acids such as dimethyl sulfuric acid, diethyl sulfuric acid, p-toluenesulfonic acid, methanesulfonic acid, and ethanesulfonic acid; super acids such as trifluoromethanesulfonic acid; strongly acidic ion exchange resins such as alkanesulfonic acid type ion exchange resins; super strong acid ion exchange resins such as perfluoroalkanesulfonic acid type ion exchange resins (trade names: Nafion, manufactured by Nafion, Du Pont, "Nafion" is a registered trademark); natural and synthetic zeolites; It is obtained by using an acid catalyst such as activated clay (acid clay) and reacting at 50 to 250°C until the xylylene compound as a raw material is substantially lost and the reaction composition becomes constant. The reaction time varies depending on the raw materials and the reaction temperature, but is usually about 1 to 15 hours, and in fact, it may be determined while tracking the reaction composition by GPC (gel permeation chromatography) or the like.

It is preferable that the epoxy group-containing acrylic copolymer is a copolymer obtained by using glycidyl acrylate or glycidyl methacrylate as a raw material in an amount used as 0.5-6 mass % with respect to the copolymer obtained. When this amount is 0.5 mass % or more, it is easy to obtain high adhesive force, and on the other hand, gelation can be suppressed because it is 6 mass % or less. The remainder may use a mixture of alkyl acrylates having an alkyl group having 1 to 8 carbon atoms, such as methyl acrylate and methyl methacrylate, alkyl methacrylates, and styrene and acrylonitrile. Among these, ethyl (meth)acrylate and/or butyl (meth)acrylate are especially preferable. The mixing ratio is preferably adjusted in consideration of Tg of the copolymer. When Tg is less than -10 degreeC, there exists a tendency for the tacking property of the adhesive bond layer 5 in a B-stage state to become large, and there exists a tendency for handling property to deteriorate. In addition, the upper limit of the glass transition point (Tg) of an epoxy group containing acrylic copolymer is 30 degreeC, for example. The polymerization method is not particularly limited, and examples thereof include pearl polymerization and solution polymerization. As a commercially available epoxy group-containing acrylic copolymer, HTR-860P-3 (trade name, manufactured by Nagase Chemtex Co., Ltd.) is mentioned, for example.

The weight average molecular weight of the epoxy group-containing acrylic copolymer is 100,000 or more, and if it is this range, adhesiveness and heat resistance are high, It is preferable that it is 300,000-3 million, It is more preferable that it is 500,000-2 million. It can suppress that the packing property between a semiconductor chip and the board|substrate which supports this falls that a weight average molecular weight is 3 million or less. A weight average molecular weight is a polystyrene conversion value using the analytical curve by standard polystyrene by the gel permeation chromatography method (GPC).

The adhesive bond layer 5 may further contain hardening accelerators, such as a tertiary amine, imidazole, and quaternary ammonium salts, as needed. Specific examples of the curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium tri melitate. These may be used individually by 1 type, and may use 2 or more types together.

The adhesive bond layer 5 may further contain an inorganic filler as needed. Specific examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. can These may be used individually by 1 type, and may use 2 or more types together.

In addition, the aspect which does not contain a thermosetting resin may be sufficient as the adhesive bond layer 5. For example, when the adhesive layer 5 includes a reactive group-containing (meth)acrylic copolymer, the adhesive layer 5 includes a reactive group-containing (meth)acrylic copolymer, a curing accelerator, and a filler. it should be

<Manufacturing method of dicing die-bonding integrated film>

The manufacturing method of the film 10 is, on the surface of the base material layer 1, an adhesive layer consisting of a pressure-sensitive adhesive composition in which adhesive strength is lowered by irradiation with active energy rays, and an adhesive layer 5 formed on the surface of the pressure-sensitive adhesive layer. The process of producing the laminated body to contain, and the process of irradiating an active energy ray to the area|region used as the 1st area|region 3a of the adhesive layer contained in a laminated body are included in this order. The active energy beam irradiation amount to the region where the first region (3a), for example, 10 to a 1000mJ / cm ^2, or may be 100 ~ 700mJ / cm ² or 200 ~ 500mJ / cm ^2.

The said manufacturing method produces the laminated body of the adhesive layer and the adhesive bond layer 5 first, and irradiates an active energy ray to the specific area|region of an adhesive layer after that. As follows, you may irradiate an active energy ray with respect to the adhesive bond layer before bonding with the adhesive bond layer 5, and you may form the 1st area|region 3a. That is, the manufacturing method of the film 10 includes a step of forming a pressure-sensitive adhesive layer made of a composition in which adhesive strength is lowered by irradiating active energy rays on the surface of the base layer 1, and the first region 3a of the pressure-sensitive adhesive layer. ), the process of irradiating an active energy ray to the area|region and the process of laminating|stacking the adhesive bond layer 5 on the surface of the adhesive layer 3 after irradiating an active energy ray in this order may be included.

<Semiconductor device and its manufacturing method>

7 is a cross-sectional view schematically showing a semiconductor device according to the present embodiment. The semiconductor device 100 shown in this figure includes a substrate 70 , four chips T1 , T2 , T3 , and T4 stacked on the surface of the substrate 70 , and electrodes ( wires W1, W2, W3, and W4 electrically connecting the four chips T1, T2, T3, and T4 to each other, and a sealing layer 50 covering them.

The substrate 70 is, for example, an organic substrate, and may be a metal substrate such as a lead frame. From the viewpoint of suppressing warpage of the semiconductor device 100 , the thickness of the substrate 70 is, for example, 70 to 140 µm, and may be 80 to 100 µm.

The four chips T1, T2, T3, and T4 are laminated through the cured product 5c of the adhesive piece 5p. The shape of the chips T1, T2, T3, and T4 in plan view is, for example, a square or a rectangle. Chip area (T1, T2, T3, T4 ) it is less than 9mm ^2, or may be ² 0.1 ~ 4mm ² or 0.1 ~ 2mm. The length of one side of the chips T1, T2, T3, and T4 is, for example, 3 mm or less, and may be 0.1 to 2.0 mm or 0.1 to 1.0 mm. The thickness of the chips T1, T2, T3, and T4 is, for example, 10 to 170 µm, and may be 25 to 100 µm. Further, the length of one side of the four chips T1 , T2 , T3 , and T4 may be the same or different from each other, and the thickness is also the same.

In the manufacturing method of the semiconductor device 100, the process of preparing the film 10 mentioned above, and sticking the wafer W with respect to the adhesive bond layer 5 of the film 10, and manufacturing the adhesive layer 3 A step of attaching a dicing ring DR to the two surfaces F2, and a step of dividing the wafer W into a plurality of chips T1, T2, T3, and T4 ^{having an area of 9 mm 2 or less (dicing step)} and the step of picking up the chip Tb with the adhesive piece (a laminate of the chip and the adhesive piece 5p, see Fig. 8(d)) from the first region 3a of the pressure-sensitive adhesive layer 3, and the adhesive piece ( 5p) and mounting the chip T1 on the substrate 70.

An example of the manufacturing method of the chip|tip Tb with an adhesive bond piece is demonstrated, referring FIG.8(a) - FIG.8(d). First, the above-described film 10 is prepared. As shown in FIG.8(a) and FIG.8(b), the film 10 is affixed so that the adhesive bond layer 5 may contact with one surface of the wafer W. As shown in FIG. Moreover, the dicing ring DR is affixed with respect to the 2nd surface F2 of the adhesive layer 3 .

The wafer W, the adhesive layer 5 and the adhesive layer 3 are diced. As a result, as shown in Fig. 8C, the wafer W is divided into chips T1, T2, T3, and T4. The adhesive bond layer 5 is also divided into pieces, and it becomes the adhesive bond piece 5p. As a dicing method, the method using a dicing blade or a laser is mentioned. Alternatively, the wafer W may be thinned by grinding the wafer W prior to dicing.

After dicing, without irradiating an active energy ray with respect to the pressure-sensitive adhesive layer 3, as shown in FIG. While the adhesive piece 5p is peeled from the adhesive layer 3 by pushing up with the pin 42, the chip|tip Tb with an adhesive bond piece is sucked up by the suction collet 44 and picked up.

A method of manufacturing the semiconductor device 100 will be described in detail with reference to FIGS. 9 to 11 . First, as shown in FIG. 9 , the first-stage chip T1 is pressed to a predetermined position on the substrate 70 via the adhesive piece 5p. Next, the adhesive piece 5p is hardened by heating. Thereby, the adhesive bond piece 5p hardens and becomes the hardened|cured material 5c. You may perform the hardening process of the adhesive bond piece 5p in a pressurized atmosphere from a viewpoint of reduction of a void.

The second-stage chip T2 is mounted on the surface of the chip T1 in the same manner as the mounting of the chip T1 to the substrate 70 . In addition, the structure 60 shown in FIG. 10 is produced by mounting the chips T3 and T4 in the third and fourth stages. After electrically connecting the chips T1 , T2 , T3 , T4 and the substrate 70 with wires W1 , W2 , W3 , and W4 (see FIG. 11 ), the semiconductor element and the wire are formed by the sealing layer 50 . The semiconductor device 100 shown in FIG. 7 is completed by covering .

As mentioned above, although embodiment of this indication was described in detail, this invention is not limited to the said embodiment. For example, the film 10 may further be provided with a cover film (not shown) which covers the adhesive bond layer 5 . In the said embodiment, although the aspect in which the adhesive force of the 1st area|region 3a of the adhesive layer 3 is falling compared with the 2nd area|region 3b by irradiation of an active energy ray was illustrated, the adhesive layer 3 UV curing type or pressure reduction type may be sufficient as silver.

You may use the peeling strength of the adhesive layer from an adhesive bond layer, and edge peeling strength for sorting|selection of a dicing die-bonding integrated film. The screening method of the dicing and die-bonding integrated film according to the first aspect includes a step of preparing two or more types of dicing and die-bonding integrated films, and a pressure-sensitive adhesive layer from an adhesive layer of two or more types of dicing and die bonding integrated films and comparing the peel strength of , and the edge peel strength.

In the screening method of the dicing die-bonding integrated film according to the second aspect, the peel strength of the pressure-sensitive adhesive layer from the adhesive layer measured under the conditions of a peeling angle of 30° and a peeling rate of 60 mm/min at a temperature of 23°C is 3.0N /25 mm or less, a step of preparing a plurality of dicing and die-bonding integrated films, and a step of inspecting whether the edge peel strength of the plurality of dicing and die-bonding integrated films is 1.2N or less. This selection method is, for example, when purchasing a plurality of dicing and die-bonding integrated films that have been inspected that the peel strength of the pressure-sensitive adhesive layer from the adhesive layer is 3.0 N/25 mm or less, from these dicing and die-bonding integrated films, It is useful for efficiently selecting a dicing and die-bonding integrated film capable of manufacturing a semiconductor device in high yield. Note that the plurality of dicing and die-bonding integrated films referred to herein may be of the same type or of different types.

Example

Hereinafter, the present disclosure will be described in more detail based on Examples, but the present invention is not limited to these Examples. In addition, unless there is a special description, all chemicals used reagents.

[Synthesis of acrylic resin (Preparation Example 1)]

The following components were placed in a flask with a capacity of 2000 ml equipped with a three-one motor, a stirring blade, and a nitrogen inlet tube.

・Ethyl acetate (solvent): 635 g

· 2-ethylhexyl acrylate: 395 g

· 2-hydroxyethyl acrylate: 100 g

·Methacrylic acid: 5g

·Azobisisobutyronitrile: 0.08g

After stirring the contents until sufficiently uniform, bubbling was performed at a flow rate of 500 ml/min for 60 minutes to degas the dissolved oxygen in the system. The temperature was raised to 78°C for 1 hour, and polymerization was performed for 6 hours after the temperature was raised. Next, the reaction solution was transferred to a pressure cooker having a capacity of 2000 ml equipped with a three-one motor, a stirring blade, and a nitrogen inlet tube, heated at 120° C. and 0.28 MPa for 4.5 hours, and then cooled to room temperature (25° C., the same hereinafter).

Next, 490 g of ethyl acetate was added, followed by stirring and dilution. After adding 0.10 g of dioctyltin dilaurate as a urethanization catalyst to this, 48.6 g of 2-methacryloxyethyl isocyanate (manufactured by Showa Denko Co., Ltd., Karenz MOI (trade name)) was added, After reacting at 70°C for 6 hours, it was cooled to room temperature. Next, ethyl acetate was added, the nonvolatile matter content in the acrylic resin solution was adjusted to be 35 mass %, and a solution containing (A) acrylic resin (Production Example 1) having a functional group capable of chain polymerization was obtained.

The solution containing the (A) acrylic resin obtained as mentioned above was vacuum-dried at 60 degreeC overnight. The solid content thus obtained was subjected to elemental analysis with a fully automatic elemental analyzer (manufactured by Elementa, trade name: varioEL), and the content of the introduced 2-methacryloxyethyl isocyanate was calculated from the nitrogen content, and found to be 0.50 mmol/g.

Moreover, the polystyrene conversion weight average molecular weight of (A) acrylic resin was calculated|required using the following apparatus. That is, SD-8022/DP-8020/RI-8020 manufactured by Tosoh Corporation was used, and Gelpack GL-A150-S/GL-A160-S manufactured by Hitachi Kasei Corporation was used for the column, and tetrahydrofuran was used as the eluent. GPC measurements were performed. As a result, the polystyrene conversion weight average molecular weight was 800,000. The hydroxyl value and acid value measured based on the method of JISK0070 were 56.1 mgKOH/g and 6.5 mgKOH/g. These results are put together in Table 1, and are shown.

[Synthesis of acrylic resin (Production Examples 2 to 4)]

(A) Acrylic resin solution according to Production Examples 2 to 4 in the same manner as in Production Example 1 except that the raw material monomer composition shown in Production Examples 2 to 4 was used instead of the raw material monomer composition shown in Production Example 1 in Table 1 were obtained respectively. Table 1 shows the measurement result about (A) acrylic resin concerning Production Examples 2-4.

<Example 1>

[Production of dicing film (adhesive layer)]

By mixing the following components, the varnish for adhesive layer formation was prepared (refer Table 2). The quantity of ethyl acetate (solvent) was adjusted so that total solid content of a varnish might be set to 25 mass %.

· (A) Acrylic resin solution (Production Example 1): 100 g (solid content)

(B) Photoinitiator (2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propionyl)-benzyl]-phenyl}-2-methyl-propan-1-one ( Ciba Specialty Chemicals Co., Ltd., Irgacure 127, "Irgacure" is a registered trademark): 1.0g

(C) Crosslinking agent (polyfunctional isocyanate, Nippon Polyurethane Kogyo Co., Ltd. product, Colonate L, solid content: 75%): 8.0 g (solid content)

・Ethyl acetate (solvent)

The polyethylene terephthalate film (450 mm in width, 500 mm in length, 38 micrometers in thickness) to which the mold release process was given to one surface was prepared. After apply|coating the varnish for adhesive layer formation to the surface to which the release process was performed using the applicator, it dried at 80 degreeC for 5 minutes. Thereby, the laminated body (dicing film) which consists of a polyethylene terephthalate film and the 30 micrometers-thick adhesive layer formed thereon was obtained.

The polyolefin film (450 mm in width, 500 mm in length, 80 micrometers in thickness) to which corona treatment was given to one surface was prepared. The surface to which the corona treatment was given and the adhesive layer of the said laminated body were bonded together at room temperature. Next, the pressure-sensitive adhesive layer was transferred to the polyolefin film (cover film) by pressing with a rubber roll. Then, the dicing film with a cover film was obtained by leaving it to stand at room temperature for 3 days.

[Production of die bonding film (adhesive layer A)]

First, cyclohexanone (solvent) was added to the following compositions and stirred and mixed, and then further kneaded using a bead mill for 90 minutes.

・Epoxy resin (YDCN-700-10 (trade name), cresol novolak-type epoxy resin manufactured by Nippon-Sumikin Chemical Co., Ltd., epoxy equivalent 210, molecular weight 1200, softening point 80° C.): 14 parts by mass

-Phenolic resin (Milex XLC-LL (brand name), Mitsui Chemicals Co., Ltd. make, phenol resin, hydroxyl equivalent 175, water absorption rate 1.8%, heating weight decrease rate in 350 degreeC 4%): 23 mass parts

· Silane coupling agent (NUC A-189 (trade name), manufactured by NUC Co., Ltd., γ-mercaptopropyl trimethoxysilane): 0.2 parts by mass

· Silane coupling agent (NUCA-1160 (trade name), manufactured by Nippon Unica Co., Ltd., γ-ureidopropyltriethoxysilane): 0.1 parts by mass

· Filler (SC2050-HLG (trade name), manufactured by Admatex Corporation, silica, average particle diameter 0.500 µm): 32 parts by mass

After adding the following components to the composition obtained as mentioned above, the varnish for adhesive bond layer formation was obtained through the process of stirring mixing and vacuum degassing.

・Epoxy group-containing acrylic copolymer (HTR-860P-3 (trade name), manufactured by Nagase Chemtex Co., Ltd., weight average molecular weight 800,000): 16 parts by mass

・Curing accelerator (Curesol 2PZ-CN (trade name), manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole, "Curesol" is a registered trademark) 0.0.1 parts by mass

The polyethylene terephthalate film (thickness 35 micrometers) to which the mold release process was given to one surface was prepared. After apply|coating the varnish for adhesive bond layer formation to the surface to which the release process was performed using the applicator, it heat-dried at 140 degreeC for 5 minutes. Thereby, the laminated body (die-bonding film) which consists of a polyethylene terephthalate film (carrier film) and the 25-micrometer-thick adhesive bond layer (B-stage state) formed thereon was obtained.

[Production of dicing and die-bonding integrated film]

The die-bonding film which consists of an adhesive bond layer and a carrier film was cut into the circular shape of 335 mm in diameter of the carrier film. After sticking the dicing film which peeled the polyethylene terephthalate film to this at room temperature, it was left to stand at room temperature for 1 day. Thereafter, the dicing film was cut into a circular shape with a diameter of 370 mm. Thus, the area|region (1st area|region of an adhesive layer) corresponding to the sticking position of the wafer in the adhesive bond layer of the dicing die-bonding integrated film obtained in this way was irradiated as follows. That is, using a pulsed xenon lamp, 70 W, 300 mJ/cm ² UV light was partially irradiated with an irradiation amount. Furthermore, ultraviolet rays were irradiated to a portion having an inner diameter of 318 mm from the center of the film using a dark film. In this way, a plurality of dicing and die-bonding integrated films for use in various evaluation tests described later were obtained.

<Example 2>

When producing the dicing film, instead of "Irgacure 127", 1-hydroxy-cyclohexyl-phenyl-ketone (Ciba Specialty Chemicals Co., Ltd., Irgacure 184, "Irgacure" is a registered trademark) A plurality of dicing and die-bonding integrated films were obtained in the same manner as in Example 1 except that the used and the irradiation amount of ultraviolet rays was 200 mJ/cm ^{2 instead of 300 mJ/cm 2 .}

<Example 3>

The irradiation dose of ultraviolet rays instead of to 200mJ / cm ^2, in the same manner as Example 2, except that in 250mJ / cm ^2, to obtain a plurality of the dicing die-bonding film integrally.

<Example 4>

The irradiation dose of ultraviolet rays instead of to 200mJ / cm ^2, in the same manner as Example 2, except that in 300mJ / cm ^2, to obtain a plurality of the dicing die-bonding film integrally.

<Example 5>

A plurality of dicing and die-bonding integrated films were obtained in the same manner as in Example 4 except that a die-bonding film having an adhesive layer B formed as follows was used instead of having an adhesive layer A as the die-bonding film.

[Production of die bonding film (adhesive layer B)]

First, after adding cyclohexanone (solvent) to the following components and stirring and mixing, it further kneaded using the bead mill for 90 minutes.

· Filler (SC2050-HLG (trade name), manufactured by Admatex Co., Ltd., silica, average particle size 0.500 µm): 50 parts by mass

After adding the following components to the composition obtained as mentioned above, the varnish for adhesive bond layer formation was obtained through the process of stirring mixing and vacuum degassing.

・Epoxy group-containing acrylic copolymer (HTR-860P-3 (trade name), manufactured by Nagase Chemtex Co., Ltd., weight average molecular weight 800,000): 100 parts by mass

・Curing accelerator (Curesol 2PZ-CN (trade name), Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole, "Curesol" is a registered trademark): 0.1 parts by mass

<Comparative Example 1>

Example 1 except that the acrylic resin according to Production Example 2 was used instead of the acrylic resin according to Production Example 1 when producing the dicing film, and the amount of the crosslinking agent was 6.0 parts by mass instead of 8.0 parts by mass In the same manner as described above, a plurality of dicing and die-bonding integrated films were obtained.

<Comparative Example 2>

In producing the dicing film, a plurality of dicing and die-bonding integrated films were obtained in the same manner as in Example 1 except that the amount of the crosslinking agent was 6.0 parts by mass instead of 8.0 parts by mass.

<Comparative Example 3>

A plurality of dicing and die-bonding integrated films were obtained in the same manner as in Comparative Example 1 except that the acrylic resin according to Production Example 3 was used instead of the acrylic resin according to Production Example 2 when producing the dicing film.

<Comparative Example 4>

When producing the dicing film, in the same manner as in Comparative Example 1, except that the acrylic resin according to Production Example 4 was used instead of the acrylic resin according to Production Example 2, and no ultraviolet rays were irradiated, a plurality of dicing - A die-bonding integrated film was obtained.

[Evaluation Test]

(1) Measurement of adhesive force (30° peel strength) of the adhesive layer to the adhesive layer

The adhesive force of the adhesive layer with respect to an adhesive bond layer was evaluated by measuring the 30 degree peeling strength. That is, a measurement sample having a width of 25 mm and a length of 100 mm was cut out from the dicing and die-bonding integrated film. The measurement sample was made into the laminated body of an adhesive layer and an adhesive bond layer. The peel strength of the adhesive layer with respect to the adhesive bond layer was measured using the tensile tester. Measurement conditions were 30 degrees of peeling angle, and 60 mm/min of tensile rate. In addition, the storage of a sample and the measurement of peeling strength were performed in the environment of the temperature of 23 degreeC, and 40% of relative humidity. About Examples 1-5 and Comparative Examples 1-3, the adhesive force of the ultraviolet irradiation area in an adhesive layer was made into evaluation object, About the comparative example 4, the adhesive force of an adhesive layer was made into evaluation object.

(2) Measurement of the edge peel strength of the chip

A dicing and die-bonding integrated film was affixed to a silicon wafer (diameter: 12 inches, thickness: 50 µm) and a dicing ring under the following conditions. The elongation in the MD direction of the dicing die-bonding integrated film after affixing the silicon wafer and the dicing ring was about 1.0 to 1.3%.

<Attachment Conditions>

・Attachment device: DFM2800 (manufactured by Disco Co., Ltd.)

・Attaching temperature: 70℃

・Attaching speed: 10mm/s

・Attachment tension level: Level 6

Next, the dicing and die-bonding integrated film-attached silicon wafer was divided into a plurality of chips with adhesive pieces (size 2 mm x 2 mm) by blade dicing.

<Dicing conditions>

・Dicer: DFD6361 (manufactured by Disco Co., Ltd.)

・Blade: ZH05-SD4000-N1-70-BB (manufactured by Disco Co., Ltd.)

・Blade rotation speed: 40000rpm

Dicing speed: 30mm/sec

·Blade height: 90μm

・Cutting depth from the surface of the adhesive layer: 20 μm

・Quantity at the time of dicing

Blade cooler: 1.5L/min

Shower: 1.0L/min

Spray: 1.0L/min

One day after dicing, under the following measurement conditions, the chip|tip with an adhesive bond piece was press-fitted from the base material layer side, and the edge peeling strength of the chip|tip with an adhesive bond piece was measured (refer FIG.2(c)). In addition, before the measurement, the surface of the base material layer corresponded to the center part of a chip|tip was marked with an oil-based pen. The central part of the chip was measured and specified with a ruler. The measurement was performed with N=10. After measurement for one chip, the next measurement was performed with an interval of three chips (see Fig. 4).

<Measurement conditions>

・Measuring device: EZ-SX small tabletop tester (manufactured by Shimadzu Corporation)

Load cell: 50N

・Pressure jig: Attachment attached to the ZTS series (shape: conical, manufactured by Imada Co., Ltd.)

·Indentation speed: 60mm/min

・Temperature: 23℃

Humidity: 45±10%

(3) Evaluation of dicing properties

The dicing property was evaluated according to the following evaluation criteria. Tables 2 and 3 show the results.

<Chip flying>

“A” indicates that no chip flying occurred after dicing, “B” indicates that chip flying did not occur, but even a slight intrusion of cutting water between the adhesive layer and the pressure-sensitive adhesive layer was confirmed, and “B” indicates that chip flying occurred even once. was designated as "C".

<crack>

The cutting cross section of the chip|tip after dicing was confirmed with the microscope, and it evaluated whether the chip|tip chip|lacking had generate|occur|produced. The cut cross section of 10 chips was observed, and the sample in which no omission was confirmed at all was evaluated as "A", and the sample in which omission was confirmed even a little was evaluated as "B".

(4) Evaluation of pick-up properties

After the above-described edge peeling strength measurement, 100 chips with adhesive pieces were picked up under the following conditions.

<Pick-up conditions>

・Die bonder device: DB800-HSD (manufactured by Hitachi High-Technologies Co., Ltd.)

Push-up pin: EJECTOR NEEDLE SEN2-83-05 (diameter: 0.7 mm, tip shape: hemisphere with a radius of 350 µm, manufactured by Micro Mechanics)

·Push-up height: 150μm

·Push-up speed: 1mm/sec;

In addition, one push-up pin was arrange|positioned at the center part of a chip|tip. The pickup success rate was 100% "A", 80% or more and less than 100% "B", 60% or more and less than 80% "C", and less than 60% "D". Tables 2 and 3 show the results.

[Table 1]

[Table 2]

[Table 3]

As shown in Table 2 and Table 3, Examples 1-5 had better pick-up property than Comparative Examples 1-4. Specifically, in Comparative Example 1, although the 30° peeling strength was a significantly lower value than Examples 1-4, since the edge peeling strength was as high as 1.6N, the pick-up property deteriorated remarkably. Moreover, in the comparative example 2, although 30 degree peeling strength is 2.6N/25mm and 3.0N/25mm or less, since it is comparatively high with edge peeling strength 1.3N, it is thought that pick-up property deteriorated. On the other hand, in Comparative Examples 3 and 4, although edge peeling strength is lower than the value of Examples 1-4, when 30 degree peeling strength is 3.0 N/25mm or more, it is thought that pick-up property deteriorated. Moreover, when the edge peeling strength contained 1.2N or less from the result of Examples 1-5, it became clear that 30 degree peeling strength is a wide range of 3.0N/25mm or less, and favorable pick-up property is acquired.

Regarding the dicing property, in Comparative Example 1, since the 30° peeling strength was too low, traces of cutting water entering between the adhesive layer and the pressure-sensitive adhesive layer were seen, and cracks were generated on the side surface of the chip. It is thought that the crack occurred because cutting water penetrated during dicing, and the chip moved and came into contact with the blade.

From the above results, in the semiconductor device manufacturing process using the small chip, by setting the edge peeling strength to 1.2N or less and the 30° peeling strength to 3.0N/25m or less, both dicing properties and pickup properties can be achieved at a sufficiently high level. knew that there was

Industrial Applicability

According to the present disclosure, an evaluation method and a selection method of a dicing and die-bonding integrated film in consideration of the effects of edge peeling and interfacial peeling of small ^{chips (area 9 mm 2 or less) are provided.} Further, according to the present disclosure, a method for evaluating pick-up properties in consideration of the effects of edge peeling and interfacial peeling of small chips, a dicing and die-bonding integrated film having excellent pick-up properties of small chips, and a method for manufacturing a semiconductor device using the same are provided.

One… base layer
3… adhesive layer
3a… first area
3b… second area
5… adhesive layer
5p… adhesive piece
5c… cured product
10… Dicing and die-bonding integrated film
42… pin
44… suction collet
50… sealing layer
60… structure
70… Board
80… support plate
100… semiconductor device
A… measurement area
DR… dicing ring
F1… side 1
F2… 2nd side
M… Mark
N… notch
P… press fit jig
Rw… area
T1, T2, T3, T4, Ts... chip
Ta, Tb... Chip with adhesive piece
W… wafer
Ws… silicon wafer
W1, W2, W3, W4… wire

Claims (8)

(A) evaluation comprising a base layer, a pressure-sensitive adhesive layer having a first surface facing the base layer and a second surface on the opposite side, and an adhesive layer provided to cover the central portion of the second surface of the pressure-sensitive adhesive layer A process of preparing the target dicing die-bonding integrated film;
(B) a first measurement step of measuring the peel strength of the pressure-sensitive adhesive layer from the adhesive layer under conditions of a peel angle of 30° and a peel rate of 60 mm/min at a temperature of 23° C.;
(C) a step of attaching a silicon wafer having a thickness of 50 μm to the adhesive layer of the dicing and die-bonding integrated film and attaching a dicing ring to the second surface of the pressure-sensitive adhesive layer;
(D) dividing the silicon wafer and the adhesive layer into a plurality of chips with adhesive pieces to obtain the square chips with the adhesive pieces having a side length of 2 mm;
(E) At a temperature of 23° C., the central portion of the chip with an adhesive piece is press-fitted from the base layer side at a speed of 60 mm/min, and the edge peeling strength when the edge of the chip with an adhesive piece is peeled off from the pressure-sensitive adhesive layer is measured A second measurement process comprising:
When the peel strength measured in the first measurement step is 3.0 N/25 mm or less and the edge peel strength measured in the second measurement step is 1.2 N or less, the dicing and die-bonding integrated film has good pickup properties The evaluation method of the dicing die-bonding integrated film which determines that it has. (i) evaluation comprising a base layer, a pressure-sensitive adhesive layer having a first surface facing the base layer and a second surface on the opposite side, and an adhesive layer provided to cover the central portion of the second surface of the pressure-sensitive adhesive layer A step of preparing the target dicing die-bonding integrated film;
(ii) a first measurement step of measuring the peel strength of the pressure-sensitive adhesive layer from the adhesive layer under the condition of a peel angle of 30°;
(iii) attaching a wafer having a thickness of 10 to 100 μm to the adhesive layer of the dicing and die-bonding integrated film, and attaching a dicing ring to the second surface of the pressure-sensitive adhesive layer;
(iv) separating the wafer and the adhesive layer into pieces with an adhesive piece having an ^{area of 9 mm 2 or less;}
(v) a second measurement step of press-fitting the central portion of the chip with the adhesive piece from the side of the base layer to measure the edge peeling strength when the edge of the chip with the adhesive piece is peeled from the pressure-sensitive adhesive layer; Methods of evaluation of gender. a base layer,
A pressure-sensitive adhesive layer having a first side facing the base layer and a second side opposite to the other side;
and an adhesive layer provided to cover the central portion of the second surface of the pressure-sensitive adhesive layer,
The peel strength of the pressure-sensitive adhesive layer from the adhesive layer measured under the conditions of a peel angle of 30° and a peel rate of 60 mm/min at a temperature of 23° C. is 3.0 N/25 mm or less, and the edge peel strength measured through the following steps is 1.2N or less, a dicing die-bonding integrated film.
<Measurement of edge peel strength>
- A process of pasting a silicon wafer with a thickness of 50 µm to the adhesive layer and attaching a dicing ring to the second surface of the pressure-sensitive adhesive layer
A step of dividing the silicon wafer and the adhesive layer into a plurality of chips with an adhesive piece to obtain the square chip with an adhesive piece having a side length of 2 mm
A step of measuring the edge peel strength when the edge of the chip with an adhesive piece is peeled from the pressure-sensitive adhesive layer by press-fitting the central portion of the chip with an adhesive piece at a speed of 60 mm/min from the base layer side at a temperature of 23°C 4. The method according to claim 3,
A dicing and die-bonding integrated film applied to a semiconductor device manufacturing process including a step of separating a wafer and an adhesive layer into pieces on a plurality of chips with an adhesive piece having an area of 9 mm ^{2 or less.} 5. The method according to claim 4,
The dicing and die-bonding integrated film in which the chip|tip with said some adhesive bond piece is obtained by blade dicing in the said process of dividing into pieces. A step of preparing the dicing and die-bonding integrated film according to any one of claims 3 to 5;
A step of attaching a wafer to the adhesive layer of the dicing die-bonding integrated film and attaching a dicing ring to the second surface of the pressure-sensitive adhesive layer;
a step of dividing the wafer and the adhesive layer into a plurality of chips with adhesive pieces ^{having an area of 9 mm 2 or less;}
picking up the chip with the adhesive piece from the pressure-sensitive adhesive layer;
and mounting the chip with the adhesive piece on a substrate or other chip. Two or more types each having a base layer, an adhesive layer having a first surface facing the base layer and a second surface opposite to the second surface, and an adhesive layer provided to cover the central portion of the second surface of the pressure-sensitive adhesive layer A process of preparing a dicing die-bonding integrated film;
Comprising the step of comparing the peel strength of the pressure-sensitive adhesive layer from the adhesive layer of the two or more types of dicing and die-bonding integrated films, and the edge peel strength, a method of screening a dicing and die-bonding integrated film. A substrate layer, a pressure-sensitive adhesive layer having a first surface facing the substrate layer and a second surface opposite thereto, and an adhesive layer provided to cover the central portion of the second surface of the pressure-sensitive adhesive layer, each provided at a temperature of 23 The peeling strength of the pressure-sensitive adhesive layer from the adhesive layer measured under the conditions of a peeling angle of 30° and a peeling rate of 60 mm/min at ° C. is 3.0 N/25 mm or less, a step of preparing a plurality of dicing and die-bonding integrated films class,
A screening method of a dicing and die-bonding integrated film comprising a step of inspecting whether the edge peel strength measured through the following process is 1.2N or less with respect to the plurality of dicing and die-bonding integrated films.
<Measurement of edge peel strength>
- A process of pasting a silicon wafer with a thickness of 50 µm to the adhesive layer and attaching a dicing ring to the second surface of the pressure-sensitive adhesive layer
A step of dividing the silicon wafer and the adhesive layer into a plurality of chips with an adhesive piece to obtain the square chip with an adhesive piece having a side length of 2 mm
A step of measuring the edge peel strength when the edge of the chip with an adhesive piece is peeled from the pressure-sensitive adhesive layer by press-fitting the central portion of the chip with an adhesive piece at a speed of 60 mm/min from the base layer side at a temperature of 23°C

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