KR20210098167A - encapsulation member for organic electronic device and organic electronic device comprising the same - Google Patents

Abstract

The present invention relates to an encapsulant for an organic electronic device and the organic electronic device including the same, and more particularly, to: an encapsulant for the organic electronic device, which removes and blocks materials that cause defects such as moisture and impurities from accessing organic electronic devices, does not generate a delamination phenomenon that can occur when moisture is removed does not occur while having an excellent effect of moisture resistance and heat resistance, and thus can prevent pixel defects of the organic electronic device; and the organic electronic device including the same.

Description

Encapsulation member for organic electronic device and organic electronic device comprising the same

The present invention relates to an encapsulant for an organic electronic device and an organic electronic device including the same, and more particularly, to an organic electronic device by removing and blocking materials that cause defects such as moisture and impurities from accessing the organic electronic device, and when the moisture is removed The present invention relates to an encapsulant for an organic electronic device, which does not cause delamination that may occur, has excellent moisture resistance and heat resistance, and can prevent pixel defects of the organic electronic device, and an organic electronic device including the same.

An organic light emitting diode (OLED: Organic Light Emitting Diode) is a light emitting diode in which a light emitting layer is made of a thin organic compound, and uses an electroluminescence phenomenon in which light is generated by passing a current through a fluorescent organic compound. These organic light emitting diodes generally implement the main colors in three colors (Red, Green, Blue) independent pixel method, bioconversion method (CCM), curly filter method, etc. Accordingly, it is divided into a low molecular organic light emitting diode and a polymer organic light emitting diode. In addition, according to the driving method, it may be divided into a passive driving method and an active driving method.

These organic light emitting diodes have characteristics such as high efficiency, low voltage driving, and simple driving by self-luminescence, and thus have the advantage of expressing high-quality moving pictures. In addition, applications to flexible displays and organic electronic devices using the flexible characteristics of organic materials are also expected.

The organic light emitting diode is manufactured in the form of laminating an organic compound, which is a light emitting layer, in the form of a thin film on a substrate. However, organic compounds used in organic light emitting diodes are very sensitive to impurities, oxygen and moisture, and thus have a problem in that their properties are easily deteriorated by external exposure or penetration of moisture and oxygen. Such deterioration of the organic material affects the light emitting characteristics of the organic light emitting diode and shortens the lifespan. In order to prevent this phenomenon, a thin film encapsulation process is required to prevent oxygen, moisture, etc. from flowing into the inside of the organic electronic device.

Conventionally, a metal can or glass is processed into a cap shape to have a groove, and a desiccant for moisture absorption is mounted in the groove in a powder form. It blocks organic electronic devices from accessing materials that are defective, such as moisture and impurities, does not cause delamination, which can occur when moisture is removed, and it is difficult to have excellent effects in moisture resistance and heat resistance at the same time.

In addition, the organic light emitting diode has a problem in that a pixel defect of the organic light emitting diode occurs due to outgas that may be generated inside the device.

Korean Patent Publication No. 10-2006-0030718 (published on: April 11, 2006)

The present invention has been devised to solve the above problems, and the problem to be solved by the present invention is to remove and block materials that cause defects such as moisture and impurities from accessing the organic electronic device, and may occur when the moisture is removed. An object of the present invention is to provide an encapsulant for an organic electronic device and an organic electronic device including the same, which does not cause delamination and has excellent moisture resistance and heat resistance, and can prevent pixel defects of the organic electronic device.

In order to solve the above problems, the encapsulant for an organic electronic device of the present invention may include an encapsulant layer formed including an encapsulation resin and a tackifier.

As a preferred embodiment of the present invention, the encapsulant layer may include a first encapsulant layer and a second encapsulant layer formed on one surface of the first encapsulant layer.

As a preferred embodiment of the present invention, the first encapsulating resin layer may further include an agent for preventing pixel defects.

As a preferred embodiment of the present invention, the pixel defect inhibitor may satisfy the following conditions (1) and (2).

≤ 2.84(1) 0.96 ≤

≤ 2.84

(2) 0.1㎛ ≤ D ₁₀ ≤ 0.3㎛, 0.35㎛ ≤ D ₅₀ ≤ 0.65㎛, 0.7㎛ ≤ D ₉₀ ≤ 1.5㎛

In the above conditions (1) and (2), D ₁₀ , D _{50 ,} and D ₉₀ refer to particle diameters corresponding to 10%, 50%, and 90% of the maximum value in the cumulative distribution of the pixel defect inhibitor particle diameter, respectively.

As a preferred embodiment of the present invention, the pixel defect inhibitor may satisfy the following condition (3).

(3) _{1.82㎛ ≤ D max} ≤ 3.38㎛

In the above condition (3), D _max refers to the maximum particle size of the pixel defect prevention agent.

As a preferred embodiment of the present invention, the pixel defect inhibitor may satisfy the following conditions (4) and (5).

(4) 1.51 ≤ A/B ≤ 2.82

(5) 0.45 g/cm 3 ≤ A ≤ 0.85 g/cm 3 , 0.21 g/cm 3 ≤ B ≤ 0.39 g/cm 3

In the above conditions (4) and (5), A is the tap density of the pixel defect inhibitor, and B is the apparent density of the pixel defect inhibitor.

As a preferred embodiment of the present invention, the pixel defect inhibitor may satisfy the following conditions (6) and (7).

≤ 0.34(6) 0.17 ≤

≤ 0.34

(7) 0.98 Wm ^-1 K ≤ C ≤ 1.82 Wm ^-1 K, 0.28×10 ^-6 K ^-1 ≤ D ≤ 0.52×10 ^-6 K ^-1 , 1.54 g/㎤ ≤ E ≤ 2.86 g/㎤

In the above conditions (6) and (7), C is the thermal conductance of the pixel defect inhibitor, D is the coefficient of thermal expansion of the pixel defect inhibitor, and E is the density of the pixel defect inhibitor.

As a preferred embodiment of the present invention, the pixel defect inhibitor may satisfy the following conditions (8) and (9).

≤ 11.0(8) 4.0 ≤

≤ 11.0

(9) 690 Mpa ≤ F ≤ 1380 Mpa, 0.55 Mpa ≤ G ≤ 1.03 Mpa, 77 Mpa ≤ H ≤ 143 Mpa

In the above conditions (8) and (9), F denotes the compressive strength of the pixel defect inhibitor, G denotes the fracture toughness of the pixel defect inhibitor, and H denotes the tensile strength of the pixel defect inhibitor. .

As a preferred embodiment of the present invention, the pixel defect inhibitor may satisfy the following conditions (10) and (11).

(10) 8.43 ≤ I×J ≤ 15.66

(11) 51.1 Gpa ≤ I ≤ 94.9 Gpa, 0.11 ≤ J ≤ 0.22

In the above conditions (10) and (11), I denotes the modulus of elasticity of the anti-pigmentation agent, and J denotes the Poisson's ratio of the anti-pigmentation agent.

As a preferred embodiment of the present invention, the pixel defect inhibitor may satisfy the following conditions (12) to (15).

(12) 1280℃ ≤ K ≤ 2380℃

(13) 2.66ε" ≤ L ≤ 4.94ε"

(14) 15.0 kV/mm ≤ M ≤ 40 kV/mm

(15) 10 ¹⁸ Ωm ≤ N

In the above condition (12), K represents the melting point of the pixel defect inhibitor.

In the above condition (13), L represents the permittivity of the pixel defect inhibitor.

In the above condition (14), M represents the dielectric field strength of the pixel defect inhibitor.

In the above condition (15), N represents the resistivity of the pixel defect inhibitor.

As a preferred embodiment of the present invention, the second encapsulation resin layer may further include a moisture absorbent.

As a preferred embodiment of the present invention, the first encapsulating resin layer may include 94 to 176 parts by weight of a tackifier and 6.3 to 11.7 parts by weight of a pixel defect prevention agent based on 100 parts by weight of the encapsulating resin.

As a preferred embodiment of the present invention, the second sealing resin layer may include 57 to 107 parts by weight of a tackifier and 110 to 206 parts by weight of a desiccant based on 100 parts by weight of the sealing resin.

As a preferred embodiment of the present invention, the encapsulant may include a compound represented by the following formula (1).

[Formula 1]

In Formula 1, R ¹ is a hydrogen atom, a C3 to C10 linear alkenyl group or a C4 to C10 pulverized alkenyl group, and n is a rational number satisfying a weight average molecular weight of 30,000 to 1,550,000.

As a preferred embodiment of the present invention, the first encapsulation resin layer and the second encapsulation resin layer may each independently further include at least one selected from a curing agent and a UV initiator.

As a preferred embodiment of the present invention, the first encapsulating resin layer may contain 28 to 52 parts by weight of a curing agent and 1.4 to 2.6 parts by weight of a UV initiator based on 100 parts by weight of the encapsulating resin.

As a preferred embodiment of the present invention, the second encapsulating resin layer may include 6.3 to 11.7 parts by weight of a curing agent and 1.4 to 2.6 parts by weight of a UV initiator based on 100 parts by weight of the encapsulating resin.

As a preferred embodiment of the present invention, the curing agent of the first encapsulation resin layer may include a compound represented by the following formula (2) and a compound represented by the following formula (3).

[Formula 2]

In Formula 2, A ₁ and A ₂ are each independently -CH ₂ -, -CH ₂ CH ₂ -, -CH ₂ CH ₂ CH ₂ -, -CH ₂ CH ₂ CH ₂ CH ₂ - or -CH ₂ CH ₂ CH ₂ CH ₂ CH ₂ CH ₂ —.

[Formula 3]

In Formula 3, A ₃ is -CH ₂ -, -CH ₂ CH ₂ -, -CH ₂ CH ₂ CH ₂ -, -CH ₂ CH ₂ CH ₂ CH ₂ - or -CH ₂ CH ₂ CH ₂ CH ₂ CH ₂ CH ₂ -.

As a preferred embodiment of the present invention, the curing agent of the second encapsulation resin layer may include a compound represented by Formula 2 above.

As a preferred embodiment of the present invention, the curing agent of the first encapsulation resin layer may include the compound represented by Formula 2 and the compound represented by Formula 3 in a weight ratio of 1:5.25 to 9.75.

As a preferred embodiment of the present invention, the first encapsulation resin layer and the second encapsulation resin layer may have a thickness ratio of 1:2.8 to 5.2.

As a preferred embodiment of the present invention, the first encapsulation resin layer may have a thickness of 1 ~ 20㎛.

As a preferred embodiment of the present invention, the second encapsulation resin layer may have a thickness of 30 to 60 μm.

Meanwhile, the organic electronic device of the present invention may include a substrate, the organic electronic device formed on at least one surface of the substrate, and the organic electronic device encapsulant of the present invention for packaging the organic electronic device.

Hereinafter, the terms used in the present invention will be described.

Desiccant, the term used in the present invention, can adsorb moisture by physical or chemical bonding such as the interface of the desiccant and van der Waals force, It includes all moisture-absorbing substances that absorb moisture through the process and change into new substances.

The encapsulant for an organic electronic device of the present invention blocks oxygen, impurities, and moisture, and at the same time effectively removes moisture permeable to significantly prevent moisture from reaching the organic electronic device, thereby significantly improving the lifespan and durability of the organic electronic device. can do it In addition, the delamination phenomenon that may occur when moisture is removed does not occur, and at the same time, there is an effect of excellent moisture resistance and heat resistance. In addition to this, it is possible to prevent pixel defects of the organic electronic device.

1 is a cross-sectional view of an encapsulant for an organic electronic device according to a preferred embodiment of the present invention.
2 is a cross-sectional view of an organic electronic device according to a preferred embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings, the embodiments of the present invention will be described in detail so that those of ordinary skill in the art to which the present invention pertains can easily implement them. The present invention may be embodied in many different forms and is not limited to the embodiments described herein. In order to clearly explain the present invention in the drawings, parts irrelevant to the description are omitted, and the same reference numerals are added to the same or similar elements throughout the specification.

Referring to FIG. 1 , the encapsulant for an organic electronic device of the present invention includes an encapsulant layer 10, and the encapsulant layer 10 includes a first encapsulant layer 11 and the first encapsulant layer ( 11) It may include a second encapsulation resin layer 12 formed on one surface. In addition, the encapsulant for an organic electronic device of the present invention may further include a release layer 30 formed on the other surface of the first encapsulant layer 11 , and a metal layer 20 formed on one surface of the second encapsulant layer 12 . may further include.

The encapsulant layer 10 of the present invention may be formed to include an encapsulant and a tackifier.

First, the encapsulating resin may include a pressure-sensitive adhesive composition, preferably a polyolefin-based resin, and the polyolefin-based resin is polyethylene, polypropylene, polypropylene, poly(polyisobutylene), etc. C ₂ ~ C ₆ )alkylene resin; And ethylene, propylene and / or a random copolymer resin copolymerized with a diene-based compound; It may include one or two or more selected from among.

As a preferred example, the encapsulant may include a compound represented by the following formula (1).

It may include a compound represented by the following formula (1).

[Formula 1]

In Formula 1, R ¹ is a hydrogen atom, a C3 to C10 linear alkenyl group, or a C4 to C10 pulverized alkenyl group, preferably R ¹ is a hydrogen atom, a C4 to C8 linear alkenyl group, or C4 It may be a pulverized alkenyl group of ~ C8.

In addition, as R ^{1 in} Formula 1 is a hydrogen atom, a C3 to C10 linear alkenyl group, or a C4 to C10 pulverized alkenyl group, reliability may be more excellent.

In addition, in Formula 1, n is a rational number satisfying a weight average molecular weight of 30,000 to 1,550,000, preferably a rational number satisfying a weight average molecular weight of 40,000 to 1,500,000, more preferably a rational number satisfying 100,000 to 1,300,000, still more preferably may be a rational number satisfying 200,000 to 800,000. If the weight average molecular weight is less than 30,000, there may be a problem that the panel sags due to the decrease in modulus, there may be a problem that heat resistance is lowered, and there is a problem that reliability is lowered as the filling property of the desiccant is lowered. There may be a problem in that mechanical properties may be reduced, and there may be a problem in that a floating phenomenon with the substrate may occur due to volume expansion of the desiccant due to the decrease in elasticity. In addition, if the weight average molecular weight exceeds 1,550,000, there may be a problem in that adhesion to the substrate is lowered due to deterioration in wettability, and there may be a problem in that adhesion to the panel is lowered as the modulus is increased.

In addition, the compound represented by Formula 1 may have a crystallization temperature of 100° C. to 140° C., preferably 110 to 130° C., and more preferably 115° C. to 125° C. when measured by the following measuring method.

[measurement method]

_{The crystallization temperature (T c} ) was measured through peak analysis of the cooling curve of the heat flow measured with a differential scanning calorimetry (DSC) while cooling from 200°C to a temperature of -150°C at a rate of 10°C/min. .

Next, the tackifier may include without limitation as long as it is an adhesive resin commonly used in encapsulants for organic electronic devices, preferably hydrogenated petroleum resin, hydrogenated rosin resin, hydrogenated rosin ester resin, hydrogenated terpene resin, and hydrogenated terpene. It may include at least one selected from a phenol resin, a polymerized rosin resin, and a polymerized rosin ester resin.

Meanwhile, the encapsulant layer 10 of the present invention may further include at least one selected from a curing agent and a UV initiator.

The curing agent may include without limitation, as long as it is a material that can be used as a curing agent in general, and preferably includes a material that can secure sufficient crosslinking density of the encapsulation resin layer by acting as a crosslinking agent, more preferably by weight. At least one selected from a urethane acrylate curing agent having an average molecular weight of 100 to 1500 and an acrylate curing agent having a weight average molecular weight of 100 to 1500 may be included. If the weight average molecular weight of the curing agent is less than 100, panel cohesion and adhesion to the substrate decrease due to the increase in hardness, and an outgas problem of the unreacted curing agent may occur. Softness) may cause a problem in that mechanical properties are lowered.

The UV initiator may include without limitation as long as it is used as a conventionally used UV initiator, for example, mono acyl phosphine, bis acyl phosphine, α-hydroxyketone. (α-Hydroxyketone), α-aminoketone (α-Aminoketone), phenylglyoxylate (Phenylglyoxylate), and may include at least one selected from benzyldimethyl-ketal (Benzyldimethyl-ketal).

Furthermore, as described above, the encapsulation layer 10 of the present invention may include the first encapsulation resin layer 11 and the second encapsulation resin layer 12 formed on one surface of the first encapsulation resin layer 11 . and each layer will be described in detail as follows.

First, the first encapsulant layer 11 is a layer in direct contact with the organic electronic device (not shown), and may include an encapsulation resin and a tackifier.

The encapsulating resin included in the first encapsulating resin layer 11 may include the same material as the aforementioned encapsulating resin, and the tackifier included in the first encapsulating resin layer 11 may include the aforementioned tackifier and It may contain the same material.

On the other hand, the first encapsulating resin layer 11 of the present invention is based on 100 parts by weight of the encapsulating resin, 94 to 176 parts by weight of the tackifier, preferably 108 to 162 parts by weight, more preferably 121 to 149 parts by weight, Even more preferably, it may include 128 to 142 parts by weight, and if it is included in less than 94 parts by weight, there may be a problem of poor moisture resistance, and if it includes more than 176 parts by weight, elasticity degradation (Brittle) There may be a problem of lowering durability and moisture resistance.

In addition, the first encapsulating resin layer 11 may further include a pixel defect prevention agent 40 ″ in addition to the encapsulation resin and the tackifier.

The pixel defect prevention agent 40" included in the first encapsulation resin layer 11 may include one or more of a pixel defect prevention agent containing zeolite, titania, zirconia or montmorillonite as components, a metal salt, and a metal oxide, More preferably, it may include a metal oxide.

Metal oxides are silica (SiO ₂ ), alumina (Al ₂ O ₃ ), lithium oxide (Li ₂ O), sodium oxide (Na ₂ O), barium oxide (BaO), calcium oxide (CaO) or magnesium oxide (MgO) It may include at least one of metal oxides, organic metal oxides, and phosphorus pentoxide (P ₂ O ₅ ), such as.

Metal salts are lithium sulfate (Li ₂ SO ₄ ), sodium sulfate (Na ₂ SO ₄ ), calcium sulfate (CaSO ₄ ), magnesium sulfate (MgSO ₄ ), cobalt sulfate (CoSO ₄ ), gallium sulfate (Ga ₂ (SO ₄ ) _{3 )} ), sulfates such as titanium sulfate (Ti(SO ₄ ) ₂ ) or nickel sulfate (NiSO ₄ ), calcium chloride (CaCl ₂ ), magnesium chloride (MgCl ₂ ), strontium chloride (SrCl ₂ ), yttrium chloride (YCl ₃ ), Copper chloride (CuCl ₂ ), cesium fluoride (CsF), tantalum fluoride (TaF ₅ ), niobium fluoride _{(NbF 5} ), lithium bromide (LiBr), calcium bromide (CaBr ₂ ), cesium bromide (CeBr ₃ ), selenium bromide ( Metal halides such as SeBr ₄ ), vanadium bromide (VBr ₃ ), magnesium bromide (MgBr ₂ ), barium iodide (BaI ₂ ) or magnesium iodide (MgI ₂ ), and barium perchlorate (Ba(ClO ₄ ) ₂ ) or magnesium perchlorate (Mg(ClO ₄ ) ₂ ) may include at least one of metal chlorates.

_{In addition, most preferably, silica (SiO 2} ) may be included as the pixel defect prevention agent 40 ″ included in the first encapsulation resin layer 11 .

In addition, the pixel defect prevention agent 40 ″ included in the first encapsulation resin layer 11 may satisfy the following conditions (1) and (2).

≤ 2.84, 바람직하게는 1.26 ≤

≤ 2.34, 더욱 바람직하게는 1.44 ≤

≤ 2.16, 더더욱 바람직하게는 1.62 ≤

≤ 1.98, 더더더욱 바람직하게는 1.71 ≤

≤ 1.89(1) 0.96 ≤

≤ 2.84, preferably 1.26 ≤

≤ 2.34, more preferably 1.44 ≤

≤ 2.16, even more preferably 1.62 ≤

≤ 1.98, even more preferably 1.71 ≤

≤ 1.89

가 0.96 미만이면 큰 입경의 입자 분포가 증가하여 코팅 공정 불량 문제 및 화소불량 방지 효율이 저하되는 문제가 있을 수 있고, 2.84를 초과하면 작은 입경의 입자 분포가 증가하여 피착제와의 박리강도 하락 문제가 있을 수 있다.In condition (1),

If is less than 0.96, the distribution of particles with a large particle size increases, which may cause problems in coating process failure and reduction in pixel defect prevention efficiency. there may be

_{(2) 0.1㎛ ≤ D 10 ≤} 0.3㎛, preferably 0.14㎛ ≤ D ₁₀ ≤ 0.26㎛, more preferably 0.16㎛ ≤ D ₁₀ ≤ 0.24㎛, even more preferably 0.18㎛ ≤ D ₁₀ ≤ 0.22㎛, even more preferably 0.19 μm ≤ D ₁₀ ≤ 0.21 μm,

0.35 µm ≤ D ₅₀ ≤ 0.65 µm, preferably 0.4 µm ≤ D ₅₀ ≤ 0.6 µm, more preferably 0.45 µm ≤ D ₅₀ ≤ 0.55 µm, even more preferably 0.47 _{µm ≤ D 50} ≤ 0.53 µm,

0.7㎛ ≤ D ₉₀ ≤ 1.5㎛, preferably 0.77㎛ ≤ D ₉₀ ≤ 1.43㎛, more preferably 0.88㎛ ≤ D ₉₀ ≤ 1.32㎛, even more preferably 0.99㎛ ≤ D ₉₀ ≤ 1.21㎛, further more preferably preferably 1.04 _{μm ≤ D 90} ≤ 1.16 μm

In condition (2), if D ₁₀ is less than 0.1 μm, there may be a problem of a decrease in peel strength with the adherend, and if it exceeds 0.3 μm, there may be a problem in that the pixel defect prevention efficiency is lowered, and if D ₅₀ is 0.35 If it is less than ㎛, there may be a problem that the peel strength from the adherend is lowered, if it exceeds 0.65㎛, there may be a problem of lowering the peel strength from the adherend, and _{if D 90} is less than 0.7㎛, the peel strength from the adherend is lowered may have a problem, and if it exceeds 1.5 μm, there may be a problem in that the pixel defect prevention efficiency is lowered.

In the above conditions (1) and (2), D ₁₀ , D _{50 ,} and D ₉₀ refer to particle diameters corresponding to 10%, 50%, and 90% of the maximum value in the cumulative distribution of the pixel defect inhibitor particle diameter, respectively.

In addition, the pixel defect preventing agent 50 may satisfy the following condition (3).

_{(3) 1.82㎛ ≤ D max ≤} 3.38㎛, preferably 2.08㎛ ≤ D _max ≤ 3.12㎛, more preferably 2.34㎛ ≤ D _max ≤ 2.86㎛, even more preferably 2.47㎛ ≤ D _max ≤ 2.73㎛

In condition (3), if D _max is less than 1.82 μm, there may be a problem of a decrease in peel strength with an adherend, and if it exceeds 3.38 μm, there may be a problem of poor coating process.

In the above condition (3), D _max refers to the maximum particle size of the pixel defect inhibitor.

In addition, the pixel defect prevention agent 40 ″ included in the first encapsulation resin layer 11 may satisfy the following condition (4).

(4) 1.51 ≤ A/B ≤ 2.82, preferably 1.73 ≤ A/B ≤ 2.6, more preferably 1.95 ≤ A/B ≤ 2.39, still more preferably 2.05 ≤ A/B ≤ 2.28

In the above condition (4), A is the tap density of the pixel defect inhibitor, and B is the apparent density of the pixel defect inhibitor.

In condition (4), if A/B is less than 1.51, there may be a problem of lowering peel strength and UV curing degree with the adherend, and if it exceeds 2.82, there may be problems of reduced pixel defect prevention efficiency and poor coating process there is.

In addition, the pixel defect prevention agent 40 ″ included in the first encapsulation resin layer 11 may satisfy the following condition (5).

(5) 0.45 g/cm 3 ≤ A ≤ 0.85 g/cm 3 , preferably 0.52 g/cm 3 ≤ A ≤ 0.78 g/cm 3 , more preferably 0.58 g/cm 3 ≤ A ≤ 0.72 g/cm 3 , even more preferably 0.61 g/cm3 ≤ A ≤ 0.69 g/cm3,

0.21 g/cm 3 ≤ B ≤ 0.39 g/cm 3 , preferably 0.24 g/cm 3 ≤ B ≤ 0.36 g/cm 3 , more preferably 0.27 g/cm 3 ≤ B ≤ 0.33 g/cm 3 , still more preferably 0.28 g/cm 3 ㎤ ≤ B ≤ 0.32 g/㎤

In the above condition (5), A is the tap density of the pixel defect inhibitor, and B is the apparent density of the pixel defect inhibitor.

In condition (5), if A is less than 0.45 g/cm 3 , there may be a problem of lowering the pixel defect prevention efficiency, and if B is less than 0.21 g/cm 3 , there may be a problem of poor coating process.

In addition, the pixel defect prevention agent 40 ″ included in the first encapsulation resin layer 11 may satisfy the following condition (6).

≤ 0.34, 바람직하게는 0.20 ≤

≤ 0.31, 더욱 바람직하게는 0.22 ≤

≤ 0.28, 더더욱 바람직하게는 0.24 ≤

≤ 0.27(6) 0.17 ≤

≤ 0.34, preferably 0.20 ≤

≤ 0.31, more preferably 0.22 ≤

≤ 0.28, even more preferably 0.24 ≤

≤ 0.27

In the above condition (6), C is the thermal conductance of the pixel defect inhibitor, D is the coefficient of thermal expansion of the pixel defect inhibitor, and E is the density of the pixel defect inhibitor.

In addition, the pixel defect prevention agent 40 ″ included in the first encapsulation resin layer 11 may satisfy the following condition (7).

(7) 0.98 Wm ^-1 K ≤ C ≤ 1.82 Wm ^-1 K, preferably 1.12 Wm ^-1 K ≤ C ≤ 1.68 Wm ^-1 K, more preferably 1.26 Wm ^-1 K ≤ C ≤ 1.54 Wm ^-1 K, even more preferably 1.33 Wm ^-1 K ≤ C ≤ 1.47 Wm ^-1 K,

0.28×10 ^-6 K ^-1 ≤ D ≤ 0.52×10 ^-6 K ^-1 , preferably 0.32×10 ^-6 K ^-1 ≤ D ≤ 0.48×10 ^-6 K ^-1 , more preferably 0.36×10 ^-6 K ^-1 ≤ D ≤ 0.44×10 ^-6 K ^-1 , even more preferably 0.38×10 ^-6 K ^-1 ≤ D ≤ 0.42×10 ^-6 K ^-1 ,

1.54 g/cm 3 ≤ E ≤ 2.86 g/cm 3 , preferably 1.76 g/cm 3 ≤ E ≤ 2.64 g/cm 3 , more preferably 1.98 g/cm 3 ≤ E ≤ 2.42 g/cm 3 , still more preferably 2.09 g/cm 3 ㎤ ≤ E ≤ 2.31 g/㎤

In the above condition (7), C is the thermal conductance of the pixel defect inhibitor, D is the coefficient of thermal expansion of the pixel defect inhibitor, and E is the density of the pixel defect inhibitor.

In addition, the pixel defect prevention agent 40 ″ included in the first encapsulation resin layer 11 may satisfy the following condition (8).

≤ 11.0, 바람직하게는 5.20 ≤

≤ 9.67, 바람직하게는 5.94 ≤

≤ 8.92, 더욱 바람직하게는 6.68 ≤

≤ 8.18, 더더욱 바람직하게는 7.06 ≤

≤ 0.83(8) 4.0 ≤

≤ 11.0, preferably 5.20 ≤

≤ 9.67, preferably 5.94 ≤

≤ 8.92, more preferably 6.68 ≤

≤ 8.18, even more preferably 7.06 ≤

≤ 0.83

In the above condition (8), F is the compressive strength of the pixel defect inhibitor, G is the fracture toughness of the pixel defect inhibitor, and H is the tensile strength of the pixel defect inhibitor.

In addition, the pixel defect prevention agent 40 ″ included in the first encapsulation resin layer 11 may satisfy the following condition (9).

(9) 690 Mpa ≤ F ≤ 1380 Mpa, preferably 724 Mpa ≤ F ≤ 1346 Mpa, more preferably 828 Mpa ≤ F ≤ 1242 Mpa, even more preferably 931 Mpa ≤ F ≤ 1139 Mpa, even more preferably is 983 Mpa ≤ F ≤ 1087 Mpa,

0.55 Mpa ≤ G ≤ 1.03 Mpa, preferably 0.63 Mpa ≤ G ≤ 0.95 Mpa, more preferably 0.71 Mpa ≤ G ≤ 0.87 Mpa, still more preferably 0.75 Mpa ≤ G ≤ 0.83 Mpa,

77 Mpa ≤ H ≤ 143 Mpa, preferably 88 Mpa ≤ H ≤ 132 Mpa, more preferably 99 Mpa ≤ H ≤ 121 Mpa, even more preferably 104 Mpa ≤ H ≤ 115 Mpa

In the above condition (9), F is the compressive strength of the pixel defect inhibitor, G is the fracture toughness of the pixel defect inhibitor, and H is the tensile strength of the pixel defect inhibitor.

In addition, the pixel defect prevention agent 40 ″ included in the first encapsulation resin layer 11 may satisfy the following condition (10).

(10) 8.43 ≤ IxJ ≤ 15.66, preferably 9.63 ≤ IxJ ≤ 14.46, more preferably 10.84 ≤ IxJ ≤ 13.25, even more preferably 11.44 ≤ IxJ ≤ 12.65

In the above condition (10), I is the modulus of elasticity of the anti-pigmentation agent, and J is the Poisson's ratio of the anti-pigmentation agent.

In addition, the pixel defect prevention agent 40 ″ included in the first encapsulation resin layer 11 may satisfy the following condition (11).

(11) 51.1 Gpa ≤ I ≤ 94.9 Gpa, preferably 58.4 Gpa ≤ I ≤ 87.6 Gpa, more preferably 65.7 Gpa ≤ I ≤ 80.3 Gpa, even more preferably 69.3 Gpa ≤ I ≤ 76.7 Gpa,

0.11 ≤ J ≤ 0.22, preferably 0.13 ≤ J ≤ 0.20, more preferably 0.14 ≤ J ≤ 0.19, even more preferably 0.15 ≤ J ≤ 0.18

In the above condition (11), I is the modulus of elasticity of the anti-pigmentation agent, and J is the Poisson's ratio of the anti-pigmentation agent.

In addition, the pixel defect prevention agent 40 ″ included in the first encapsulation resin layer 11 may satisfy the following condition (12).

(12) 1280 °C ≤ K ≤ 2380 °C, preferably 1460 °C ≤ K ≤ 2200 °C, more preferably 1640 °C ≤ K ≤ 2020 °C, even more preferably 1730 °C ≤ K ≤ 1930 °C

In the above condition (12), K represents the melting point of the pixel defect inhibitor.

In addition, the pixel defect prevention agent 40 ″ included in the first encapsulation resin layer 11 may satisfy the following condition (13).

(13) 2.66ε" ≤ L ≤ 4.94ε", preferably 3.04ε" ≤ L ≤ 4.56ε", more preferably 3.42ε" ≤ L ≤ 4.18ε", even more preferably 3.61ε" ≤ L ≤ 3.99ε"

In the above condition (13), L represents the permittivity of the pixel defect inhibitor.

In addition, the pixel defect prevention agent 40 ″ included in the first encapsulation resin layer 11 may satisfy the following condition (14).

(14) 15.0 kV/mm ≤ M ≤ 40 kV/mm

In the above condition (14), M represents the dielectric field strength of the pixel defect inhibitor.

In addition, the pixel defect prevention agent 40 ″ included in the first encapsulation resin layer 11 may satisfy the following condition (15).

(15) 10 ¹⁸ Ωm ≤ N

In the above condition (15), N represents the resistivity of the pixel defect inhibitor.

In addition, the pixel defect prevention agent 40 ″ included in the first encapsulation resin layer 11 may satisfy the following condition (16).

(16) 0.9 ≤ O

In the above condition (16), O represents the sphericity rate of the pixel defect inhibitor.

In addition, the pixel defect prevention agent 40 ″ included in the first encapsulation resin layer 11 may satisfy the following condition (17).

(17) 4.9 ≤ P ≤ 9.1, preferably 5.6 ≤ P ≤ 8.4, more preferably 6.3 ≤ P ≤ 7.7, even more preferably 6.6 ≤ P ≤ 7.4

In the above condition (17), P represents the hardness of the pixel defect inhibitor.

In addition, the first encapsulation resin layer 11 of the present invention is 6.3 to 11.7 parts by weight, preferably 7.2 to 10.8 parts by weight, more preferably 8.1 to 11.7 parts by weight of the pixel defect prevention agent 40" based on 100 parts by weight of the encapsulation resin. 9.9 parts by weight, more preferably 8.55 to 9.45 parts by weight.

Furthermore, the first encapsulant layer 11 of the present invention may further include at least one selected from a curing agent and a UV initiator in addition to an encapsulant, a tackifier, and a pixel defect prevention agent 40 ", and preferably may be formed by further comprising a curing agent and a UV initiator.

The curing agent included in the first encapsulating resin layer 11 may include the same material as the curing agent mentioned above, and preferably at least one selected from a compound represented by the following Chemical Formula 2 and a compound represented by the following Chemical Formula 3 It may include, and more preferably, a compound represented by the following formula (2) and a compound represented by the following formula (3) may be included, thereby ensuring sufficient curing density, and through this, the advantage of excellent moisture resistance and heat resistance there is. In addition, there is an advantage that room temperature bonding process is possible due to excellent room temperature wettability and adhesion.

[Formula 2]

In Formula 2, A ₁ and A ₂ are each independently -CH ₂ -, -CH ₂ CH ₂ -, -CH ₂ CH ₂ CH ₂ -, -CH ₂ CH ₂ CH ₂ CH ₂ - or -CH ₂ CH ₂ CH ₂ CH ₂ CH ₂ CH ₂ —, preferably —CH ₂ —, —CH ₂ CH ₂ — or —CH ₂ CH ₂ CH ₂ —.

[Formula 3]

In Formula 3, A ₃ is -CH ₂ -, -CH ₂ CH ₂ -, -CH ₂ CH ₂ CH ₂ -, -CH ₂ CH ₂ CH ₂ CH ₂ - or -CH ₂ CH ₂ CH ₂ CH ₂ CH ₂ CH ₂ —, preferably —CH ₂ —, —CH ₂ CH ₂ — or —CH ₂ CH ₂ CH ₂ —.

In addition, the curing agent included in the first encapsulation resin layer 11 contains the compound represented by Formula 2 and the compound represented by Formula 3 in a weight ratio of 1: 5.25 to 9.75, preferably 1: 6 to 9 by weight, more preferably Preferably, it may be included in a weight ratio of 1: 6.75 to 8.25, more preferably 1: 7.12 to 7.88 by weight. There may be problems with steaming and omission of the encapsulant and poor heat resistance.

In addition, the first encapsulating resin layer 11 of the present invention is based on 100 parts by weight of the encapsulating resin, 28 to 52 parts by weight of the curing agent, preferably 32 to 48 parts by weight, more preferably 36 to 44 parts by weight, even more preferably It may contain 38 to 42 parts by weight, and if included in less than 28 parts by weight, it is not possible to achieve the desired gelation rate and modulus, and there may be a problem that the elasticity is lowered, and it may contain more than 52 parts by weight. In this case, there may be problems of panel adhesion failure due to high modulus and hardness, and a decrease in adhesive strength due to deterioration in wettability.

The UV initiator included in the first encapsulant layer 11 may include the same material as the aforementioned UV initiator.

In addition, the first encapsulating resin layer 11 of the present invention is based on 100 parts by weight of the encapsulating resin, 1.4 to 2.6 parts by weight of the UV initiator, preferably 1.6 to 2.4 parts by weight, more preferably 1.8 to 2.2 parts by weight, even more Preferably, it may contain 1.9 to 2.1 parts by weight, and if it contains less than 1.4 parts by weight, there may be a problem of poor heat resistance due to UV curing failure, and if it contains more than 2.6 parts by weight, the curing density may decrease There may be a problem of poor heat resistance.

Next, the second encapsulation resin layer 12 is a layer in direct contact with the metal layer 20 and may include an encapsulation resin and a tackifier.

The encapsulating resin included in the second encapsulating resin layer 12 may include the same material as the aforementioned encapsulating resin, and the tackifier included in the second encapsulating resin layer 12 may include the aforementioned tackifier and It may contain the same material.

On the other hand, the second sealing resin layer 12 of the present invention, based on 100 parts by weight of the sealing resin, 57 to 107 parts by weight of the tackifier, preferably 65 to 99 parts by weight, more preferably 73 to 90 parts by weight, Even more preferably, it may contain 77 to 86 parts by weight, and if it contains less than 57 parts by weight, there may be a problem of poor moisture resistance, and if it contains more than 107 parts by weight, elasticity deterioration (Brittle) There may be a problem of lowering durability and moisture resistance.

In addition, the second sealing resin layer 12 may be formed to further include a moisture absorbent 40 ′ in addition to the sealing resin and the tackifier.

The desiccant 40' included in the second encapsulation resin layer 12 may include at least one of a pixel defect inhibitor, a metal salt, and a metal oxide including zeolite, titania, zirconia or montmorillonite as a component, and more preferably For example, it may include a metal oxide.

Metal oxides are silica (SiO ₂ ), alumina (Al ₂ O ₃ ), lithium oxide (Li ₂ O), sodium oxide (Na ₂ O), barium oxide (BaO), calcium oxide (CaO) or magnesium oxide (MgO) It may include at least one of metal oxides, organic metal oxides, and phosphorus pentoxide (P ₂ O ₅ ), such as.

Metal salts are lithium sulfate (Li ₂ SO ₄ ), sodium sulfate (Na ₂ SO ₄ ), calcium sulfate (CaSO ₄ ), magnesium sulfate (MgSO ₄ ), cobalt sulfate (CoSO ₄ ), gallium sulfate (Ga ₂ (SO ₄ ) _{3 )} ), sulfates such as titanium sulfate (Ti(SO ₄ ) ₂ ) or nickel sulfate (NiSO ₄ ), calcium chloride (CaCl ₂ ), magnesium chloride (MgCl ₂ ), strontium chloride (SrCl ₂ ), yttrium chloride (YCl ₃ ), Copper chloride (CuCl ₂ ), cesium fluoride (CsF), tantalum fluoride (TaF ₅ ), niobium fluoride _{(NbF 5} ), lithium bromide (LiBr), calcium bromide (CaBr ₂ ), cesium bromide (CeBr ₃ ), selenium bromide ( Metal halides such as SeBr ₄ ), vanadium bromide (VBr ₃ ), magnesium bromide (MgBr ₂ ), barium iodide (BaI ₂ ) or magnesium iodide (MgI ₂ ), and barium perchlorate (Ba(ClO ₄ ) ₂ ) or magnesium perchlorate (Mg(ClO ₄ ) ₂ ) may include at least one of metal chlorates.

In addition, as the desiccant 40' included in the second encapsulation resin layer 12, calcium oxide (CaO) may be most preferably included, and thus stable moisture absorption through a chemical reaction rather than physical moisture absorption is achieved. There may be advantages to being able to. In addition, the moisture absorbent 40' included in the second encapsulation resin layer 12 is not limited in shape or particle size, but preferably the shape may be amorphous or spherical, and the average particle diameter is 0.1 to 20 μm, preferably 0.5 to 10 μm, more preferably 1.5 to 4 μm, and if the average particle diameter is less than 0.1 μm, there may be a problem that the specific surface area increases to lower the peel strength with the adherend, and exceeds 20 μm If it does, there may be a problem of poor coating process.

In addition, the second sealing resin layer 12 of the present invention is based on 100 parts by weight of the sealing resin, 110 to 206 parts by weight of the moisture absorbent 40', preferably 126 to 190 parts by weight, more preferably 142 to 174 parts by weight. parts, more preferably 150 to 166 parts by weight, and if it contains less than 110 parts by weight, the desired effect of removing moisture from the second encapsulation resin layer 12 cannot be achieved. There may be a problem of lowering durability, and when it contains more than 206 parts by weight, the adhesive performance is significantly reduced, and the first encapsulating resin layer 11 and the second encapsulating resin layer 12 due to excessive volume expansion when moisture is absorbed. and/or the second encapsulation layer 12 and the first encapsulation layer 11 are excited in the organic electronic device, and moisture rapidly penetrates therebetween to shorten the life of the organic electronic device. There may be problems.

Furthermore, the second encapsulation resin layer 12 of the present invention may further include one or more selected from a curing agent and a UV initiator in addition to the sealing resin, the tackifier and the moisture absorbent 40 ′, and preferably a curing agent And it may be formed by further comprising a UV initiator.

The curing agent included in the second encapsulation resin layer 12 may include the same material as the aforementioned curing agent, and preferably include a compound represented by Chemical Formula 2 above.

In addition, the second sealing resin layer 12 of the present invention is based on 100 parts by weight of the sealing resin, 6.3 to 11.7 parts by weight of the curing agent, preferably 7.2 to 10.8 parts by weight, more preferably 8.1 to 10.0 parts by weight, even more preferably It may contain 8.5 to 9.5 parts by weight, and if it contains less than 6.3 parts by weight, it is not possible to achieve the desired gelation rate and modulus, and there may be a problem of lowering elasticity, and it may contain more than 11.7 parts by weight. In this case, there may be problems of panel adhesion failure due to high modulus and hardness, and a decrease in adhesive strength due to deterioration in wettability.

The UV initiator included in the second encapsulation resin layer 12 may include the same material as the aforementioned UV initiator.

In addition, the second encapsulation resin layer 12 of the present invention is based on 100 parts by weight of the encapsulating resin, 1.4 to 2.6 parts by weight of the UV initiator, preferably 1.6 to 2.4 parts by weight, more preferably 1.8 to 2.2 parts by weight, even more Preferably, it may contain 1.9 to 2.1 parts by weight, and if it contains less than 1.4 parts by weight, there may be a problem of poor heat resistance due to poor UV curing, and if it contains more than 2.6 parts by weight, the curing density may be lowered. There may be a problem of poor heat resistance.

On the other hand, the first encapsulation resin layer 11 and the second encapsulation resin layer 12 have a thickness ratio of 1:2.8 to 5.2, preferably 1:3.2 to 4.8, and more preferably 1:3.6 to 4.4. , more preferably 1: may have a thickness ratio of 3.8 to 4.2. If the thickness ratio is less than 1:2.8, there may be a problem of poor reliability due to moisture, and if it exceeds 1:5.2, the photocuring efficiency decreases as the thickness increases, and thus the heat resistance and reliability are deteriorated due to the decrease in the curing density. there may be

In addition, the thickness of the first encapsulant layer 11 of the present invention may be 1 ~ 30㎛, preferably 7 ~ 13㎛, more preferably 8 ~ 12㎛, even more preferably 9 ~ 11㎛, The thickness of the second encapsulation resin layer 12 of the present invention may be 15 to 70 μm, preferably 28 to 52 μm, more preferably 32 to 48 μm, still more preferably 36 to 44 μm.

In addition, the first encapsulating resin layer 11 and the second encapsulating resin layer 12 may be a dried encapsulant layer or a cured encapsulant layer.

The metal layer 20 of the present invention includes iron (Fe), bismuth (Bi), tin (Sn), indium (In), silver (Ag), copper (Cu), zinc (Zn), antimony (Sb), nickel (Ni), chromium (Cr), and may include at least one selected from alloys thereof.

Preferred examples include bismuth (Bi), tin (Sn), indium (In), silver (Ag), copper (Cu), zinc (Zn), antimony (Sb), nickel (Ni), chromium (Cr), etc. It includes a metal sheet made of a stainless steel material containing Metal sheet containing an alloy containing 16 to 18% by weight of chromium and the remaining amount of iron (Fe) (S) including impurities such as).

In addition, the thickness of the metal layer 20 may be 60㎛ ~ 150㎛, preferably 70㎛ ~ 120㎛, more preferably 75㎛ ~ 105㎛.

The release layer 30 of the present invention may be a release sheet material generally used in the art as a release sheet material, and for example, PET (polyethylene terephthalate), paper (Paper), PI ( Poly imide) and PE (Poly Ester) may include one or two or more selected from.

In addition, the thickness of the release layer 30 may be 15㎛ ~ 75㎛, preferably 25㎛ ~ 60㎛, more preferably 35㎛ ~ 55㎛.

Furthermore, referring to FIG. 2 , the organic electronic device of the present invention includes a substrate 1 , an organic electronic device 2 formed on at least one surface of the substrate 1 , and the present invention packaging the organic electronic device 2 . may include an encapsulant 10 for an organic electronic device.

The substrate 1 is preferably any one of a glass substrate, a quartz substrate, a sapphire substrate, a plastic substrate, and a flexible polymer film that can be bent.

In the organic electronic device 2 formed on at least one surface of the substrate 1, a lower electrode is thinly formed on the substrate 1, and an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and an upper electrode are sequentially stacked thereon. It may be formed by etching, or may be formed by disposing it on the substrate 1 after being prepared through a separate substrate. A specific method for forming the organic electronic device 2 on the substrate 1 may be based on a known and customary method in the art, and the present invention is not particularly limited, and the organic electronic device 2 is It may be a light emitting diode.

Next, the encapsulant 10 for an organic electronic device of the present invention packages the organic electronic device 2, and the specific method of packaging may be a known conventional method, and the present invention is not particularly limited. . As a non-limiting example, in the organic electronic device 2 formed on the substrate 1 , the first encapsulation layer 11 of the organic electronic device encapsulant 10 is directly connected to the organic electronic device 2 . It can be carried out by applying heat and/or pressure using a vacuum press or a vacuum laminator in a contact state. In addition, heat may be applied to cure the encapsulant 10 for an organic electronic device, and in the case of an encapsulant including a photocurable encapsulant, the encapsulant may be moved to a chamber irradiated with light to further undergo a curing process.

Hereinafter, the present invention will be described with reference to the following examples. At this time, the following examples are only presented to illustrate the invention, and the scope of the present invention is not limited by the following examples.

Example 1: Preparation of encapsulant for organic electronic device

(1) Preparation of the first encapsulation resin layer

Based on 100 parts by weight of the encapsulating resin, 135 parts by weight of a tackifier, 40 parts by weight of a curing agent, 2 parts by weight of a UV initiator, and 9 parts by weight of a pixel defect prevention agent were mixed to prepare a mixture.

At this time, the compound represented by the following Chemical Formula 1-1 was used as the encapsulating resin, SU-500 (Kolon Industries, Ltd.) was used as the tackifier, and the compound represented by the following Chemical Formula 2-1 and the following Chemical Formula 3 as the curing agent. The compound represented by -1 was used in a weight ratio of 1:7.5, irgacure TPO (Ciba) was used as a UV initiator, and silica having the physical properties described in Table 1 below was used as an agent for preventing pixel defects.

The prepared mixture was adjusted to a viscosity of 600 cps at a temperature of 20 ° C, passed through a capsule filter to remove foreign substances, and then applied to 38 μm thick antistatic release PET (REL382, Toray) using a slot die coater, and then After removing the solvent by drying at a temperature of 160° C., a first encapsulation resin layer having a final thickness of 10 μm was prepared.

[Formula 1-1]

In Formula 1-1, R ¹ is isoprene, and n is a rational number satisfying the weight average molecular weight of the compound represented by Formula 1-1 of 400,000.

[Formula 2-1]

[Formula 3-1]

In Formula 3-1, A ₃ is -CH ₂ -.

(2) Manufacturing of the second encapsulation resin layer

Based on 100 parts by weight of the encapsulant, 82 parts by weight of a tackifier, 9 parts by weight of a curing agent, 2 parts by weight of a UV initiator, and 158 parts by weight of a desiccant were mixed to prepare a mixture.

At this time, the compound represented by the following formula 1-1 was used as the sealing resin, SU-525 (Kolon Industries, Ltd.) was used as the tackifier, and the compound represented by the following formula 2-1 was used as the curing agent, Irgacure TPO (Ciba) was used as a UV initiator, and calcium oxide having an average particle diameter of 3 μm was used as a moisture absorbent.

The prepared mixture was adjusted to a viscosity of 600 cps at a temperature of 20 ° C, passed through a capsule filter to remove foreign substances, and then applied to a 36 μm thick antistatic release PET (TG65R, SKC) using a slot die coater, and then After removing the solvent by drying at a temperature of 160° C., a second encapsulation resin layer having a final thickness of 40 μm was prepared.

[Formula 1-1]

In Formula 1-1, R ¹ is isoprene, and n is a rational number satisfying the weight average molecular weight of the compound represented by Formula 1-1 of 400,000.

[Formula 2-1]

(3) Manufacture of encapsulant

An encapsulant was prepared by laminating the prepared first encapsulating resin layer to face the second encapsulating resin layer and passing it through a 70° C. lamirol.

Examples 2 to 9: Preparation of encapsulants for organic electronic devices

An encapsulant for an organic electronic device was prepared in the same manner as in Example 1. However, unlike Example 1, as shown in Table 2 below, the contents of the tackifier, moisture absorbent, and pixel defect prevention agent used in manufacturing the first and second encapsulation resin layers were respectively different, and finally, an organic electronic device encapsulation agent was used. Ash was prepared.

Example 10: Preparation of encapsulant for organic electronic device

An encapsulant for an organic electronic device was prepared in the same manner as in Example 1. However, unlike Example 1, the curing agent used to prepare the first encapsulation resin layer includes the compound represented by Formula 2-1 and the compound represented by Formula 3-1 in a weight ratio of 1: 4.67, and finally the organic electronic device. An encapsulant was prepared.

Example 11: Preparation of encapsulant for organic electronic device

An encapsulant for an organic electronic device was prepared in the same manner as in Example 1. However, unlike Example 1, the curing agent used to prepare the first encapsulation resin layer includes the compound represented by Formula 2-1 and the compound represented by Formula 3-1 in a weight ratio of 1:16, and finally the organic electronic device. An encapsulant was prepared.

Example 12: Preparation of encapsulant for organic electronic device

An encapsulant for an organic electronic device was prepared in the same manner as in Example 1. However, unlike Example 1, only the compound represented by Formula 2-1 was used as a curing agent used to prepare the first encapsulant layer, and finally an encapsulant for an organic electronic device was manufactured.

Example 13: Preparation of encapsulant for organic electronic device

An encapsulant for an organic electronic device was prepared in the same manner as in Example 1. However, unlike Example 1, only the compound represented by Chemical Formula 3-1 was used as a curing agent used to prepare the first encapsulating resin layer, and finally, an encapsulant for an organic electronic device was manufactured.

Experimental Example 1

The following physical properties were measured for the encapsulants prepared in Examples and Comparative Examples.

1. Evaluation of water penetration of encapsulants

After cutting the specimen (= encapsulant) to a size of 95mm × 95mm, remove the release PET on one side, and fit the specimen 2.5mm inside from the edge of the 100mm × 100mm alkali-free glass to the inside 2.5mm, It was attached using a roll laminator heated to 65 °C. After removing the release PET remaining on the attached specimen, another 100 mm × 100 mm alkali-free glass was covered and lamination was performed at 25° C. for 1 minute with a vacuum laminator to prepare a sample bonded without bubbles. After the cementation was completed, the length of the penetration of moisture was observed under a microscope in a reliability chamber set at 85° C. and 85% relative humidity in units of 1000 hours.

2. Evaluation of volume expansion of encapsulants

After removing the PET release PET of the specimen (= encapsulant) to a 50 μm thick SUS plate cut to 30 mm × 20 mm, it was attached using a roll laminator heated to about 65°C. The attached specimen was cut with a knife to fit the size of SUS, and then attached to 40mm × 30mm 0.7T alkali-free glass using a roll laminator heated to 65°C. After confirming that the specimen is well attached without voids between the glass and SUS, observe for 1,000 hours at intervals of 100 hours in a reliability chamber set at 85°C and 85% relative humidity, and the specimen is based on SUS in the area where moisture is absorbed. The change in height was observed through an optical microscope.

As a result of observation, when the height change in the moisture absorption area is less than 12㎛ ◎, when the height change in the moisture absorption area is less than 12 ~ 14㎛ ○, when the height change in the moisture absorption area is less than 14 ~ 16㎛ △, the height in the moisture absorption area When the change is 16 μm or more, it is indicated by ×.

3. Heat resistance evaluation of encapsulants

A specimen (= encapsulant) was cut to a size of 50 mm Х 80 mm, and the second encapsulation resin layer from which one side of the release PET was removed was attached to a 60 mm Х 150 mm 0.08T Ni alloy using a roll laminator at a temperature of 80 ℃. The first encapsulation resin layer from which the release PET remaining on the attached specimen was removed was attached to 30mm Х 70mm 5T alkali-free glass using a roll laminator at a temperature of 25°C. After the specimen attached to the glass was vertically fixed in a chamber at 100° C., a 1 kg weight was hung to determine the flow. At this time, when there is no abnormality in the evaluation result, it is indicated by ○, and when it flows even a little, it is indicated by ×.

4. Glass adhesion evaluation

For the encapsulants prepared according to Examples and Comparative Examples, the adhesive force measuring tape (7475, TESA) was roll-laminated on the second encapsulant resin layer from which the release PET was removed through a 2 kg hand roller, and the sample ( = encapsulant) was cut to a width of 25 mm and a length of 120 mm, and the first encapsulation resin layer from which the release PET was removed at 25 ° C. was left in the , and the glass adhesive force was measured at a speed of 300 mm/min through a universal testing machine (UTM).

5. Metal adhesion evaluation

For the encapsulants prepared according to the Examples and Comparative Examples, the second encapsulation resin layer from which the release PET was removed at 80 ° C was roll-laminated on a Ni alloy sheet (thickness: 0.08 mm), and an adhesive force measuring tape (7475, TESA) was applied. After roll lamination on the first encapsulant layer from which the release PET was removed, the sample (= encapsulant) was cut to a width of 25 mm and a length of 120 mm, and then the prepared sample (= encapsulant) was placed at room temperature (= 25°C) for 30 minutes. was left at, and the metal adhesion was measured at a speed of 300 mm/min through a universal testing machine (UTM).

Experimental Example 2

An organic light emitting device (hole transport layer NPD/thickness 800A, light emitting layer Alq3/thickness 300A, electron injection layer LiF/thickness 10A, cathode Al + Liq/thickness 1,000A) on a substrate with an ITO pattern is deposited and laminated, After laminating the encapsulant according to Examples and Comparative Examples at room temperature, an OLED unit specimen emitting green light was prepared. Thereafter, the following physical properties were evaluated for the specimen.

1. Evaluation of pixel defect of organic light emitting device due to moisture penetration of encapsulant

The occurrence of pixel defects was confirmed by observing the specimens in an environment of 85° C. and 85% relative humidity for each time period in the light emitting part with a digital microscope of ×100 for 100 hours.

At this time, when the time required for pixel defect occurrence is more than 1,000 hours ◎, when the time required for pixel defect is less than 1000 hours to 800 hours or more ○, when the time required for pixel defect is less than 800 hours to more than 600 hours △, time required for pixel defect When this time is less than 600 hours, it is indicated by ×.

2. Durability evaluation of encapsulants

Specimens were observed for 1,000 hours at intervals of 100 hours in a reliability chamber set at 85°C and 85% relative humidity to examine the interface separation between the organic electronic device and the encapsulant, cracks or bubbles in the adhesive film, and separation between the adhesive layers using an optical microscope. Physical damage was evaluated by observation. If there is no abnormality in the evaluation result, ○ , if any abnormality occurs, such as interfacial separation, cracks or bubbles in the encapsulant, and separation between the first and second encapsulation resin layers, × is indicated.

Simple modifications or changes of the present invention can be easily carried out by those skilled in the art, and all such modifications or changes can be considered to be included in the scope of the present invention.

Claims (16)

Including an encapsulation resin layer formed including an encapsulation resin and a tackifier,
The encapsulation layer may include a first encapsulation layer; and a second encapsulant layer formed on one surface of the first encapsulant layer. includes,
The first encapsulant layer further comprises a pixel defect inhibitor, and the pixel defect inhibitor satisfies the following conditions (1) and (2).
(1) 0.96 ≤

≤ 2.84
(2) 0.1㎛ ≤ D ₁₀ ≤ 0.3㎛, 0.35㎛ ≤ D ₅₀ ≤ 0.65㎛, 0.7㎛ ≤ D ₉₀ ≤ 1.5㎛
In the above conditions (1) and (2), D ₁₀ , D _{50 ,} and D ₉₀ refer to particle diameters corresponding to 10%, 50%, and 90% of the maximum value in the cumulative distribution of the particle size of the pixel defect prevention agent, respectively.
According to claim 1,
The encapsulant for an organic electronic device, characterized in that the pixel defect inhibitor satisfies the following condition (3).
(3) _{1.82㎛ ≤ D max} ≤ 3.38㎛
In the above condition (3), D _max refers to the maximum particle size of the pixel defect prevention agent.
According to claim 1,
The pixel defect inhibitor satisfies the following conditions (4) and (5).
(4) 1.51 ≤ A/B ≤ 2.82
(5) 0.45 g/cm 3 ≤ A ≤ 0.85 g/cm 3 , 0.21 g/cm 3 ≤ B ≤ 0.39 g/cm 3
In the above conditions (4) and (5), A is the tap density of the pixel defect inhibitor, and B is the apparent density of the pixel defect inhibitor.
According to claim 1,
The pixel defect prevention agent is an encapsulant for an organic electronic device, characterized in that it satisfies the following conditions (6) and (7).
(6) 0.17 ≤

≤ 0.34
(7) 0.98 Wm ^-1 K ≤ C ≤ 1.82 Wm ^-1 K, 0.28×10 ^-6 K ^-1 ≤ D ≤ 0.52×10 ^-6 K ^-1 , 1.54 g/㎤ ≤ E ≤ 2.86 g/㎤
In the above conditions (6) and (7), C is the thermal conductance of the pixel defect inhibitor, D is the coefficient of thermal expansion of the pixel defect inhibitor, and E is the density of the pixel defect inhibitor.
According to claim 1,
The pixel defect prevention agent is an encapsulant for an organic electronic device, characterized in that it satisfies the following conditions (8) and (9).
(8) 4.0 ≤

≤ 11.0
(9) 690 Mpa ≤ F ≤ 1380 Mpa, 0.55 Mpa ≤ G ≤ 1.03 Mpa, 77 Mpa ≤ H ≤ 143 Mpa
In the above conditions (8) and (9), F denotes the compressive strength of the pixel defect inhibitor, G denotes the fracture toughness of the pixel defect inhibitor, and H denotes the tensile strength of the pixel defect inhibitor. .
According to claim 1,
The pixel defect preventing agent is an encapsulant for an organic electronic device, characterized in that it satisfies the following conditions (10) and (11).
(10) 8.43 ≤ I×J ≤ 15.66
(11) 51.1 Gpa ≤ I ≤ 94.9 Gpa, 0.11 ≤ J ≤ 0.22
In the above conditions (10) and (11), I denotes the modulus of elasticity of the anti-pigmentation agent, and J denotes the Poisson's ratio of the anti-pigmentation agent.
According to claim 1,
The pixel defect prevention agent is an encapsulant for an organic electronic device, characterized in that it satisfies the following conditions (12) to (15).
(12) 1280℃ ≤ K ≤ 2380℃
(13) 2.66ε" ≤ L ≤ 4.94ε"
(14) 15.0 kV/mm ≤ M ≤ 40 kV/mm
(15) 10 ¹⁸ Ωm ≤ N
In the above condition (12), K represents the melting point of the pixel defect inhibitor,
In the above condition (13), L represents the permittivity of the pixel defect prevention agent,
In the above condition (14), M represents the dielectric field strength of the pixel defect inhibitor,
In the above condition (15), N represents the resistivity of the pixel defect inhibitor.
According to claim 1,
The second encapsulation resin layer further comprises a moisture absorbent,
The first encapsulating resin layer comprises 94 to 176 parts by weight of a tackifier and 6.3 to 11.7 parts by weight of a pixel defect prevention agent based on 100 parts by weight of the encapsulating resin,
The second encapsulating resin layer is an encapsulant for an organic electronic device, characterized in that it contains 57 to 107 parts by weight of a tackifier and 110 to 206 parts by weight of a moisture absorbent based on 100 parts by weight of the encapsulating resin.
According to claim 1,
The encapsulant is an encapsulant for an organic electronic device, characterized in that it comprises a compound represented by the following formula (1);
[Formula 1]

In Formula 1, R ¹ is a hydrogen atom, a C3 to C10 linear alkenyl group or a C4 to C10 pulverized alkenyl group, and n is a rational number satisfying a weight average molecular weight of 30,000 to 1,550,000.
9. The method of claim 8,
The first encapsulating resin layer and the second encapsulating resin layer are each independently an encapsulant for an organic electronic device, characterized in that it further comprises at least one selected from a curing agent and a UV initiator.
11. The method of claim 10,
The first encapsulating resin layer contains 28 to 52 parts by weight of a curing agent and 1.4 to 2.6 parts by weight of a UV initiator based on 100 parts by weight of the encapsulating resin,
The second encapsulant layer is an encapsulant for an organic electronic device, characterized in that it contains 6.3 to 11.7 parts by weight of a curing agent and 1.4 to 2.6 parts by weight of a UV initiator based on 100 parts by weight of the encapsulation resin.
11. The method of claim 10,
The curing agent of the first encapsulation resin layer includes a compound represented by the following formula (2) and a compound represented by the following formula (3),
The curing agent of the second encapsulant layer is an encapsulant for an organic electronic device, characterized in that it comprises a compound represented by the following formula (2).
[Formula 2]

In Formula 2, A ₁ and A ₂ are each independently -CH ₂ -, -CH ₂ CH ₂ -, -CH ₂ CH ₂ CH ₂ -, -CH ₂ CH ₂ CH ₂ CH ₂ - or -CH ₂ CH ₂ CH ₂ CH ₂ CH ₂ CH ₂ -,
[Formula 3]

In Formula 3, A ₃ is -CH ₂ -, -CH ₂ CH ₂ -, -CH ₂ CH ₂ CH ₂ -, -CH ₂ CH ₂ CH ₂ CH ₂ - or -CH ₂ CH ₂ CH ₂ CH ₂ CH ₂ CH ₂ -.
13. The method of claim 12,
The curing agent of the first encapsulant layer is an encapsulant for an organic electronic device, comprising the compound represented by Formula 2 and the compound represented by Formula 3 in a weight ratio of 1: 5.25 to 9.75.
According to claim 1,
The first encapsulating resin layer and the second encapsulating resin layer have a thickness ratio of 1:2.8 to 5.2.
15. The method of claim 14,
The first encapsulation resin layer has a thickness of 1 ~ 20㎛,
The second encapsulant encapsulant layer is an encapsulant for an organic electronic device, characterized in that it has a thickness of 30 to 60㎛.
Board;
an organic electronic device formed on at least one surface of the substrate; and
An encapsulant for an organic electronic device of any one of claims 1 to 15 for packaging the organic electronic device;
An organic electronic device comprising a.

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