KR20210068418A - Photosensitive resin composition, manufacturing method of pattern cured product, cured product, interlayer insulating film, cover coat layer, surface protective film and electronic component - Google Patents
Photosensitive resin composition, manufacturing method of pattern cured product, cured product, interlayer insulating film, cover coat layer, surface protective film and electronic component Download PDFInfo
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- KR20210068418A KR20210068418A KR1020217008588A KR20217008588A KR20210068418A KR 20210068418 A KR20210068418 A KR 20210068418A KR 1020217008588 A KR1020217008588 A KR 1020217008588A KR 20217008588 A KR20217008588 A KR 20217008588A KR 20210068418 A KR20210068418 A KR 20210068418A
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- photosensitive resin
- resin composition
- formula
- component
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- 239000011342 resin composition Substances 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000010410 layer Substances 0.000 title claims description 22
- 239000011229 interlayer Substances 0.000 title claims description 18
- 230000001681 protective effect Effects 0.000 title claims description 16
- 239000000178 monomer Substances 0.000 claims abstract description 32
- 239000004642 Polyimide Substances 0.000 claims abstract description 14
- 229920001721 polyimide Polymers 0.000 claims abstract description 14
- 239000002904 solvent Substances 0.000 claims abstract description 14
- 239000002243 precursor Substances 0.000 claims abstract description 12
- 238000007363 ring formation reaction Methods 0.000 claims abstract description 9
- 239000003054 catalyst Substances 0.000 claims abstract description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 61
- 229920005989 resin Polymers 0.000 claims description 55
- 239000011347 resin Substances 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 43
- 125000001931 aliphatic group Chemical group 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 36
- 150000001875 compounds Chemical class 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 27
- 125000003118 aryl group Chemical group 0.000 claims description 25
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 24
- 125000000217 alkyl group Chemical group 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 18
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 12
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 10
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- AFBPFSWMIHJQDM-UHFFFAOYSA-N N-methylaniline Chemical compound CNC1=CC=CC=C1 AFBPFSWMIHJQDM-UHFFFAOYSA-N 0.000 claims description 8
- 239000003963 antioxidant agent Substances 0.000 claims description 8
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- OJGMBLNIHDZDGS-UHFFFAOYSA-N N-Ethylaniline Chemical compound CCNC1=CC=CC=C1 OJGMBLNIHDZDGS-UHFFFAOYSA-N 0.000 claims description 6
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- OJPDDQSCZGTACX-UHFFFAOYSA-N 2-[n-(2-hydroxyethyl)anilino]ethanol Chemical compound OCCN(CCO)C1=CC=CC=C1 OJPDDQSCZGTACX-UHFFFAOYSA-N 0.000 claims description 5
- 125000003545 alkoxy group Chemical group 0.000 claims description 5
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- MWGATWIBSKHFMR-UHFFFAOYSA-N 2-anilinoethanol Chemical compound OCCNC1=CC=CC=C1 MWGATWIBSKHFMR-UHFFFAOYSA-N 0.000 claims description 3
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- 125000000753 cycloalkyl group Chemical group 0.000 claims description 3
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- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 16
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- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 8
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- 230000000694 effects Effects 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
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- JUVSRZCUMWZBFK-UHFFFAOYSA-N 2-[n-(2-hydroxyethyl)-4-methylanilino]ethanol Chemical compound CC1=CC=C(N(CCO)CCO)C=C1 JUVSRZCUMWZBFK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 3
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 3
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 3
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical class C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 3
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- 125000005843 halogen group Chemical group 0.000 description 3
- 238000002329 infrared spectrum Methods 0.000 description 3
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
- C08F290/08—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
- C08F290/14—Polymers provided for in subclass C08G
- C08F290/145—Polyamides; Polyesteramides; Polyimides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/12—Unsaturated polyimide precursors
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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Abstract
(A) 중합성의 불포화 결합을 갖는 폴리이미드 전구체, (B) 중합성 모노머, (C) 광중합 개시제, (D) 환화 촉매, 및 (E) 용제를 함유하는 감광성 수지 조성물.(A) The photosensitive resin composition containing the polyimide precursor which has a polymerizable unsaturated bond, (B) a polymerizable monomer, (C) a photoinitiator, (D) a cyclization catalyst, and (E) a solvent.
Description
본 발명은, 감광성 수지 조성물, 패턴 경화물의 제조 방법, 경화물, 층간 절연막, 커버 코트층, 표면 보호막 및 전자 부품에 관한 것이다. The present invention relates to a photosensitive resin composition, a method for producing a pattern cured product, a cured product, an interlayer insulating film, a cover coat layer, a surface protective film, and an electronic component.
종래, 반도체 소자의 표면 보호막 및 층간 절연막에는, 우수한 내열성과 전기 특성, 기계 특성 등을 겸비한 폴리이미드나 폴리벤조옥사졸이 사용되고 있다. 최근, 이들 수지 자체에 감광 특성을 부여한 감광성 수지 조성물이 사용되고 있으며, 이것을 사용하면 패턴 경화물의 제조 공정을 간략화할 수 있어, 번잡한 제조 공정을 단축할 수 있다(예를 들어, 특허문헌 1 참조). Conventionally, polyimide and polybenzoxazole having excellent heat resistance, electrical properties, mechanical properties, and the like have been used for surface protective films and interlayer insulating films of semiconductor elements. In recent years, the photosensitive resin composition which provided the photosensitive characteristic to these resin itself is used, and if this is used, the manufacturing process of a pattern hardened|cured material can be simplified, and a complicated manufacturing process can be shortened (for example, refer patent document 1). .
그런데, 최근, 컴퓨터의 고성능화를 지탱해 온 트랜지스터의 미세화는, 스케일링 법칙의 한계에 와 있어, 가일층의 고성능화나 고속화를 위해서 반도체 소자를 3차원적으로 적층하는 적층 디바이스 구조가 주목을 모으고 있다. However, in recent years, the miniaturization of transistors that have supported the high performance of computers has reached the limit of the scaling law, and a stacked device structure in which semiconductor elements are stacked three-dimensionally in order to further increase performance and speed is attracting attention.
적층 디바이스 구조 중에서도, 멀티다이 팬아웃 웨이퍼 레벨 패키지(Multi-die Fanout Wafer Level Packaging)는, 1개의 패키지 중에 복수의 다이를 일괄 봉지하여 제조하는 패키지이며, 종래부터 제안되고 있는 팬아웃 웨이퍼 레벨 패키지(1개의 패키지 중에 1개의 다이를 봉지하여 제조한다)보다도 저비용화, 고성능화를 기대할 수 있으므로, 매우 주목을 모으고 있다.Among the stacked device structures, the multi-die fanout wafer level package (Multi-die Fanout Wafer Level Packaging) is a package manufactured by encapsulating a plurality of dies in one package. Since it is possible to expect lower cost and higher performance than manufacturing by encapsulating one die in one package), it is attracting much attention.
멀티다이 팬아웃 웨이퍼 레벨 패키지의 제작에 있어서는, 고성능 다이의 보호나 내열성이 낮은 봉지재를 보호하여, 수율을 향상시키는 관점에서, 저온 경화성이 강하게 요구되고 있다(예를 들어, 특허문헌 2 참조). In the production of a multi-die fan-out wafer-level package, low-temperature curability is strongly required from the viewpoint of protecting high-performance die and protecting a sealing material with low heat resistance and improving yield (for example, refer to Patent Document 2) .
또한, 수지 조성물로서, 폴리이미드 전구체를 포함하는 수지 조성물이 개시되어 있다(예를 들어, 특허문헌 3 참조).Moreover, as a resin composition, the resin composition containing a polyimide precursor is disclosed (for example, refer patent document 3).
본 발명의 목적은, 230℃ 이하의 저온 경화여도, 기계 특성이 우수한 경화물을 형성할 수 있는, 보존 안정성이 우수한 감광성 수지 조성물, 패턴 경화물의 제조 방법, 경화물, 층간 절연막, 커버 코트층, 표면 보호막 및 전자 부품을 제공하는 것이다.An object of the present invention is to provide a photosensitive resin composition excellent in storage stability that can form a cured product having excellent mechanical properties even when cured at a low temperature of 230° C. or less, a method for producing a pattern cured product, a cured product, an interlayer insulating film, a cover coat layer, To provide a surface protection film and an electronic component.
본 발명에 의하면, 이하의 감광성 수지 조성물 등이 제공된다. ADVANTAGE OF THE INVENTION According to this invention, the following photosensitive resin compositions etc. are provided.
1. (A) 중합성의 불포화 결합을 갖는 폴리이미드 전구체,1. (A) a polyimide precursor having a polymerizable unsaturated bond;
(B) 중합성 모노머,(B) a polymerizable monomer;
(C) 광중합 개시제,(C) a photoinitiator;
(D) 환화(環化) 촉매, 및 (D) a cyclization catalyst, and
(E) 용제를 함유하는 감광성 수지 조성물.(E) The photosensitive resin composition containing a solvent.
2. 상기 (A) 성분이, 하기 식 (1)로 나타내는 구조 단위를 갖는 폴리이미드 전구체인 1에 기재된 감광성 수지 조성물. 2. The photosensitive resin composition of 1 whose said (A) component is a polyimide precursor which has a structural unit represented by following formula (1).
(식 (1) 중, X1은 1 이상의 방향족기를 갖는 4가의 기로서, -COOR1기와 -CONH-기는 서로 오르토 위치에 있으며, -COOR2기와 -CO-기는 서로 오르토 위치에 있다. Y1은 2가의 방향족기이다. R1 및 R2는, 각각 독립적으로, 수소 원자, 하기 식 (2)로 나타내는 기, 또는 탄소수 1~4의 지방족 탄화수소기이며, R1 및 R2 중 적어도 한 쪽이 상기 식 (2)로 나타내는 기이다.)(In formula (1), X 1 is a tetravalent group having one or more aromatic groups, -COOR 1 group and -CONH- group are ortho-positioned to each other, -COOR 2 group and -CO- group are mutually ortho-positioned. Y 1 is a divalent aromatic group, R 1 and R 2 are each independently a hydrogen atom, a group represented by the following formula (2), or an aliphatic hydrocarbon group having 1 to 4 carbon atoms, and at least one of R 1 and R 2 This is group represented by said Formula (2).)
(식 (2) 중, R3~R5는, 각각 독립적으로, 수소 원자 또는 탄소수 1~3의 지방족 탄화수소기이며, m은 1~10의 정수이다.)(In formula (2), R 3 to R 5 are each independently a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and m is an integer of 1 to 10.)
3. 상기 (D) 성분이, N-페닐디에탄올아민, N-메틸아닐린, N-에틸아닐린, N,N-디메틸아닐린, N-페닐에탄올아민, 4-페닐모르폴린 및 2,2'-(4-메틸페닐이미노)디에탄올로 이루어지는 군에서 선택되는 1 이상인 1 또는 2에 기재된 감광성 수지 조성물.3. The component (D) is N-phenyldiethanolamine, N-methylaniline, N-ethylaniline, N,N-dimethylaniline, N-phenylethanolamine, 4-phenylmorpholine and 2,2'- The photosensitive resin composition as described in 1 or 2 which is 1 or more selected from the group which consists of (4-methylphenyl imino) diethanol.
4. 상기 (D) 성분이, 하기 식 (17)로 나타내는 화합물을 포함하는 1 또는 2에 기재된 감광성 수지 조성물.4. The photosensitive resin composition as described in 1 or 2 in which said (D)component contains the compound represented by following formula (17).
(식 (17) 중, R31A~R33A는, 각각 독립적으로, 수소 원자, 1가의 지방족 탄화수소기, 하이드록시기를 갖는 1가의 지방족 탄화수소기, 또는 1가의 방향족기이며, R31A~R33A 중 적어도 1개가 1가의 방향족기이다. R31A~R33A는 인접하는 기끼리 환(環)을 형성해도 된다.)(In formula (17), R 31A to R 33A are each independently a hydrogen atom, a monovalent aliphatic hydrocarbon group, a monovalent aliphatic hydrocarbon group having a hydroxyl group, or a monovalent aromatic group, and among R 31A to R 33A At least one is a monovalent aromatic group. R 31A to R 33A may form a ring between adjacent groups.)
5. 상기 (C) 성분이 (C1) 하기 식 (15)로 나타내는 화합물 및 (C2) 하기 식 (16)으로 나타내는 화합물을 포함하는 1~4 중 어느 하나에 기재된 감광성 수지 조성물.5. The photosensitive resin composition in any one of 1-4 in which said (C)component contains the compound represented by (C1) following formula (15), and (C2) the compound represented by following formula (16).
(식 (15) 중, R11A는 탄소수 1~12의 알킬기이며, a1은 0~5의 정수이다. R12A는 수소 원자 또는 탄소수 1~12의 알킬기이다. R13A 및 R14A는, 각각 독립적으로 수소 원자, 탄소수 1~12의 알킬기, 페닐기 또는 톨릴기를 나타낸다. a1이 2 이상의 정수인 경우, R11A는 각각 동일해도 되며, 상이해도 된다.)(In formula (15), R 11A is an alkyl group having 1 to 12 carbon atoms, and a1 is an integer of 0 to 5. R 12A is a hydrogen atom or an alkyl group having 1 to 12 carbon atoms. R 13A and R 14A are each independently represents a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, a phenyl group or a tolyl group. When a1 is an integer of 2 or more, R 11A may be the same or different.)
(식 (16) 중, R21A는 탄소수 1~12의 알킬기이며, R22A 및 R23A는, 각각 독립적으로 수소 원자, 탄소수 1~12의 알킬기, 탄소수 1~12의 알콕시기, 탄소수 4~10의 시클로알킬기, 페닐기 또는 톨릴기이며, c1은 0~5의 정수이다. c1이 2 이상의 정수인 경우, R21A는 각각 동일해도 되며, 상이해도 된다.)(In formula (16), R 21A is an alkyl group having 1 to 12 carbon atoms, R 22A and R 23A are each independently a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, and 4 to 10 carbon atoms of a cycloalkyl group, a phenyl group, or a tolyl group, and c1 is an integer of 0 to 5. When c1 is an integer of 2 or more, R 21A may be the same or different, respectively.)
6. 상기 (B) 성분이, 지방족 환상(環狀) 골격을 갖는 중합성 모노머를 포함하는 1~5 중 어느 하나에 기재된 감광성 수지 조성물.6. The photosensitive resin composition in any one of 1-5 in which the said (B) component contains the polymerizable monomer which has aliphatic cyclic skeleton.
7. 상기 (B) 성분이, 중합성의 불포화 이중 결합을 포함하는 기를 갖는 1~6 중 어느 하나에 기재된 감광성 수지 조성물.7. The photosensitive resin composition in any one of 1-6 in which the said (B) component has group containing a polymerizable unsaturated double bond.
8. 상기 (B) 성분이, 2 이상의 중합성의 불포화 이중 결합을 포함하는 기를 갖는 중합성 모노머인 7에 기재된 감광성 수지 조성물.8. The photosensitive resin composition according to 7, wherein the component (B) is a polymerizable monomer having a group containing two or more polymerizable unsaturated double bonds.
9. 상기 (B) 성분이, 하기 식 (3)으로 나타내는 중합성 모노머를 포함하는 1~7 중 어느 하나에 기재된 감광성 수지 조성물.9. The photosensitive resin composition in any one of 1-7 in which the said (B) component contains the polymerizable monomer represented by following formula (3).
(식 (3) 중, R6 및 R7은, 각각 독립적으로, 탄소수 1~4의 지방족 탄화수소기 또는 하기 식 (4)로 나타내는 기이다. n1은 0 또는 1이며, n2는 0~2의 정수이며, n1+n2는 1 이상이다. n1개의 R6 및 n2개의 R7 중 적어도 1개는, 하기 식 (4)로 나타내는 기이다.)(In formula (3), R 6 and R 7 are each independently an aliphatic hydrocarbon group having 1 to 4 carbon atoms or a group represented by the following formula (4). n1 is 0 or 1, and n2 is 0 to 2 It is an integer, and n1+n2 is equal to or greater than 1. At least one of n1 pieces of R 6 and n2 pieces of R 7 is a group represented by the following formula (4).)
(식 (4) 중, R9~R11은, 각각 독립적으로, 수소 원자 또는 탄소수 1~3의 지방족 탄화수소기이며, l은 0~10의 정수이다.)(In formula (4), R 9 to R 11 are each independently a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and l is an integer of 0 to 10.)
10. n1+n2가, 2 또는 3인 9에 기재된 감광성 수지 조성물.10. The photosensitive resin composition of 9 whose n1+n2 is 2 or 3.
11. 상기 (B) 성분이, 하기 식 (5)로 나타내는 중합성 모노머를 포함하는 1~10 중 어느 하나에 기재된 감광성 수지 조성물.11. The photosensitive resin composition in any one of 1-10 in which said (B) component contains the polymerizable monomer represented by following formula (5).
12. (F) 열중합 개시제를 더 포함하는 1~11 중 어느 하나에 기재된 감광성 수지 조성물.12. (F) The photosensitive resin composition in any one of 1-11 further containing a thermal-polymerization initiator.
13. 산화 방지제를 더 포함하는 1~12 중 어느 하나에 기재된 감광성 수지 조성물.13. The photosensitive resin composition in any one of 1-12 containing antioxidant further.
14. 1~13 중 어느 하나에 기재된 감광성 수지 조성물을 기판 상에 도포, 건조시켜 감광성 수지막을 형성하는 공정과,14. The process of apply|coating and drying the photosensitive resin composition in any one of 1-13 on a board|substrate to form a photosensitive resin film;
상기 감광성 수지막을 패턴 노광하여, 수지막을 얻는 공정과,a step of pattern exposing the photosensitive resin film to obtain a resin film;
상기 패턴 노광 후의 수지막을, 유기 용제를 사용하여, 현상하여, 패턴 수지막을 얻는 공정과,A step of developing the resin film after the pattern exposure using an organic solvent to obtain a pattern resin film;
상기 패턴 수지막을 가열 처리하는 공정을 포함하는 패턴 경화물의 제조 방법. The manufacturing method of the pattern hardened|cured material including the process of heat processing the said pattern resin film.
15. 상기 가열 처리 온도가 230℃ 이하인 14에 기재된 패턴 경화물의 제조 방법. 15. The manufacturing method of the pattern hardened|cured material of 14 whose said heat processing temperature is 230 degrees C or less.
16. 1~13 중 어느 하나에 기재된 감광성 수지 조성물을 경화시킨 경화물. 16. Hardened|cured material which hardened the photosensitive resin composition in any one of 1-13.
17. 패턴 경화물인 16에 기재된 경화물. 17. The hardened|cured material of 16 which is a pattern hardened|cured material.
18. 16 또는 17에 기재된 경화물을 사용하여 제작된 층간 절연막, 커버 코트층 또는 표면 보호막. 18. An interlayer insulating film, a cover coat layer, or a surface protective film produced using the cured product described in 16 or 17.
19. 18에 기재된 층간 절연막, 커버 코트층 또는 표면 보호막을 포함하는 전자 부품. 19. An electronic component comprising the interlayer insulating film, the cover coat layer, or the surface protective film according to 18.
본 발명에 의하면, 230℃ 이하의 저온 경화여도, 기계 특성이 우수한 경화물을 형성할 수 있는, 보존 안정성이 우수한 감광성 수지 조성물, 패턴 경화물의 제조 방법, 경화물, 층간 절연막, 커버 코트층, 표면 보호막 및 전자 부품을 제공할 수 있다.According to the present invention, a photosensitive resin composition excellent in storage stability capable of forming a cured product having excellent mechanical properties even when cured at a low temperature of 230° C. or lower, a method for producing a pattern cured product, a cured product, an interlayer insulating film, a cover coat layer, a surface A protective film and an electronic component may be provided.
도 1은, 본 발명의 일 실시형태에 관련되는 전자 부품의 제조 공정도이다.BRIEF DESCRIPTION OF THE DRAWINGS It is a manufacturing process diagram of the electronic component which concerns on one Embodiment of this invention.
이하에, 본 발명의 감광성 수지 조성물, 그것을 사용한 패턴 경화물의 제조 방법, 경화물, 층간 절연막, 커버 코트층, 표면 보호막 및 전자 부품의 실시형태를 상세하게 설명한다. 또한, 이하의 실시형태에 의해 본 발명이 한정되는 것은 아니다. EMBODIMENT OF THE INVENTION Below, embodiment of the photosensitive resin composition of this invention, the manufacturing method of the pattern hardened|cured material using the same, hardened|cured material, an interlayer insulating film, a cover coat layer, a surface protective film, and an electronic component is demonstrated in detail. In addition, this invention is not limited by the following embodiment.
본 명세서에 있어서 "A 또는 B"란, A와 B 중 어느 한 쪽을 포함하고 있으면 되고, 양쪽 모두 포함하고 있어도 된다. 또한, 본 명세서에 있어서 "공정"이라는 용어는, 독립된 공정뿐만 아니라, 다른 공정과 명확하게 구별할 수 없는 경우여도 그 공정의 소기의 작용이 달성되면, 본 용어에 포함된다. In this specification, "A or B" may include either one of A and B, or both may be included. In addition, in this specification, the term "process" is included in this term if the desired action of the process is achieved even if it is not clearly distinguishable from an independent process as well as other processes.
"~"를 사용하여 나타낸 수치 범위는, "~"의 전후에 기재되는 수치를 각각 최소치 및 최대치로서 포함하는 범위를 나타낸다. 또한, 본 명세서에 있어서 조성물 중의 각 성분의 함유량은, 조성물 중에 각 성분에 해당하는 물질이 복수 존재하는 경우, 특별히 한정짓지 않는 이상, 조성물 중에 존재하는 당해 복수의 물질의 합계량을 의미한다. 또한, 예시 재료는 특별히 한정짓지 않는 이상 단독으로 사용해도 되며, 2종 이상을 조합하여 사용해도 된다. The numerical range indicated using "to" indicates a range including the numerical values described before and after "to" as the minimum value and the maximum value, respectively. In addition, in this specification, content of each component in a composition means the total amount of the said some substance which exists in a composition unless it specifically limits when there exist two or more substances corresponding to each component in a composition. In addition, unless it specifically limits, an example material may be used independently and may be used in combination of 2 or more type.
본 명세서에 있어서의 "(메타)아크릴기"란, "아크릴기" 및 "메타크릴기"를 의미한다. "(meth)acryl group" in this specification means "acryl group" and "methacrylic group".
본 발명의 감광성 수지 조성물은, (A) 중합성의 불포화 결합을 갖는 폴리이미드 전구체(이하, "(A) 성분"이라고도 한다.), (B) 중합성 모노머("가교제"라고도 한다.) (이하, "(B) 성분"이라고도 한다.), (C) 광중합 개시제(이하, "(C) 성분"이라고도 한다.)), (D) 환화 촉매(이하, "(D) 성분"이라고도 한다.), 및The photosensitive resin composition of the present invention comprises (A) a polyimide precursor having a polymerizable unsaturated bond (hereinafter, also referred to as “component (A)”), (B) a polymerizable monomer (also referred to as “crosslinking agent”) (hereinafter referred to as “component (A)”). , "(B) component"), (C) photoinitiator (hereinafter also referred to as "(C) component")), (D) cyclization catalyst (hereinafter also referred to as "(D) component"). , and
(E) 용제(이하, "(E) 성분"이라고도 한다.)를 함유한다.(E) contains a solvent (hereinafter also referred to as "(E) component".).
이로써, 230℃ 이하의 저온 경화여도, 기계 특성이 우수한 경화물을 형성할 수 있다.Thereby, even if it is low temperature hardening of 230 degreeC or less, the hardened|cured material excellent in mechanical properties can be formed.
또한, 보존 안정성을 향상시킬 수 있다.Moreover, storage stability can be improved.
또한, 임의의 효과로서, 230℃ 이하의 저온 경화여도, 환화율이 우수한 경화물을 형성할 수 있다.Moreover, as an arbitrary effect, even if it is low temperature hardening of 230 degreeC or less, the hardened|cured material excellent in the cyclization rate can be formed.
임의의 효과로서, 감도를 향상시킬 수 있다.As an optional effect, it is possible to improve the sensitivity.
본 발명의 감광성 수지 조성물은, 네거티브형 감광성 수지 조성물인 것이 바람직하다. 본 발명의 감광성 수지 조성물은, 전자 부품용 재료인 것이 바람직하다. It is preferable that the photosensitive resin composition of this invention is a negative photosensitive resin composition. It is preferable that the photosensitive resin composition of this invention is a material for electronic components.
(A) 성분으로는, 특별히 제한되지는 않지만, 패터닝 시의 광원에 i선을 사용한 경우의 투과율이 높고, 230℃ 이하의 저온 경화 시에도 높은 경화물 특성을 나타내는 폴리이미드 전구체가 바람직하다. Although it does not restrict|limit especially as component (A), The polyimide precursor which shows high transmittance|permeability when i-line|wire is used for the light source at the time of patterning and high hardened|cured material even at the time of low temperature hardening of 230 degreeC or less is preferable.
중합성의 불포화 결합으로는, 탄소탄소의 이중 결합 등을 들 수 있다. As a polymerizable unsaturated bond, the double bond of carbon-carbon, etc. are mentioned.
(A) 성분은, 하기 식 (1)로 나타내는 구조 단위를 갖는 폴리이미드 전구체인 것이 바람직하다. 이로써, i선의 투과율이 높고, 230℃ 이하의 저온 경화 시에도 양호한 경화물을 형성할 수 있다. (A) It is preferable that a component is a polyimide precursor which has a structural unit represented by following formula (1). Thereby, the transmittance|permeability of i line|wire is high, and it can form favorable hardened|cured material even at the time of low temperature hardening of 230 degreeC or less.
식 (1)로 나타내는 구조 단위의 함유량은, (A) 성분의 전(全)구성 단위에 대하여, 50 몰% 이상인 것이 바람직하며, 80 몰% 이상이 보다 바람직하며, 90 몰% 이상이 더욱 바람직하다. 상한은 특별히 한정되지 않고, 100 몰%여도 된다.It is preferable that content of the structural unit represented by Formula (1) is 50 mol% or more with respect to all the structural units of (A) component, 80 mol% or more is more preferable, and 90 mol% or more is still more preferable. Do. The upper limit is not particularly limited, and may be 100 mol%.
(식 (1) 중, X1은 1 이상의 방향족기를 갖는 4가의 기로서, -COOR1기와 -CONH-기는 서로 오르토 위치에 있으며, -COOR2기와 -CO-기는 서로 오르토 위치에 있다. Y1은 2가의 방향족기이다. R1 및 R2는, 각각 독립적으로, 수소 원자, 하기 식 (2)로 나타내는 기, 또는 탄소수 1~4의 지방족 탄화수소기이며, R1 및 R2 중 적어도 한 쪽이 상기 식 (2)로 나타내는 기이다.)(In formula (1), X 1 is a tetravalent group having one or more aromatic groups, -COOR 1 group and -CONH- group are ortho-positioned to each other, -COOR 2 group and -CO- group are mutually ortho-positioned. Y 1 is a divalent aromatic group, R 1 and R 2 are each independently a hydrogen atom, a group represented by the following formula (2), or an aliphatic hydrocarbon group having 1 to 4 carbon atoms, and at least one of R 1 and R 2 This is group represented by said Formula (2).)
(식 (2) 중, R3~R5는, 각각 독립적으로, 수소 원자 또는 탄소수 1~3의 지방족 탄화수소기이며, m은 1~10의 정수(整數)바람직하게는 2~5의 정수, 보다 바람직하게는 2 또는 3)이다.) (In formula (2), R 3 to R 5 are each independently a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, m is an integer of 1 to 10, preferably an integer of 2 to 5; More preferably, it is 2 or 3).)
식 (1)의 X1의 1 이상(바람직하게는 1~3, 보다 바람직하게는 1 또는 2)의 방향족기를 갖는 4가의 기에 있어서, 방향족기는, 방향족 탄화수소기여도 되며, 방향족 복소환식기여도 된다. 방향족 탄화수소기가 바람직하다. In the tetravalent group having one or more (preferably 1 to 3, more preferably 1 or 2) aromatic groups of X 1 in the formula (1), the aromatic group may be an aromatic hydrocarbon group or an aromatic heterocyclic group. An aromatic hydrocarbon group is preferred.
식 (1)의 X1의 방향족 탄화수소기로는, 벤젠환으로 형성되는 2~4가(2가, 3가 또는 4가)의 기, 나프탈렌으로 형성되는 2~4가의 기, 페릴렌으로 형성되는 2~4가의 기 등을 들 수 있다. As an aromatic hydrocarbon group of X 1 in formula (1), a divalent to tetravalent (divalent, trivalent or tetravalent) group formed from a benzene ring, a divalent to tetravalent group formed from naphthalene, and perylene A group of 2-4 valence, etc. are mentioned.
식 (1)의 X1의 1 이상의 방향족기를 갖는 4가의 기로는, 예를 들어 이하의 식 (6)의 4가의 기를 들 수 있지만, 이들에 한정되는 것은 아니다. As tetravalent group which has one or more aromatic groups of X<1> of Formula (1), although tetravalent group of the following Formula (6) is mentioned, for example, It is not limited to these.
(식 (6) 중, X 및 Y는, 각각 독립적으로, 각각이 결합하는 벤젠환과 공액하지 않는 2가의 기 또는 단결합을 나타낸다. Z는 에테르기(-O-) 또는 설파이드기(-S-)이다(-O-가 바람직하다).) (In formula (6), X and Y each independently represent a divalent group or single bond that is not conjugated to the benzene ring to which each is bonded. Z is an ether group (-O-) or a sulfide group (-S- ) (-O- is preferred).)
식 (6)에 있어서, X 및 Y의, 각각이 결합하는 벤젠환과 공액하지 않는 2가의 기는, -O-, -S-, 메틸렌기, 비스(트리플루오로메틸)메틸렌기, 또는 디플루오로메틸렌기인 것이 바람직하며, -O-인 것이 보다 바람직하다. In Formula (6), the divalent group which is not conjugated to the benzene ring to which each is couple|bonded of X and Y is -O-, -S-, a methylene group, a bis(trifluoromethyl)methylene group, or difluoro It is preferable that it is a methylene group, and it is more preferable that it is -O-.
식 (1)의 Y1의 2가의 방향족기는, 2가의 방향족 탄화수소기여도 되며, 2가의 방향족 복소환식기여도 된다. 2가의 방향족 탄화수소기가 바람직하다.A divalent aromatic hydrocarbon group may be sufficient as the divalent aromatic group of Y<1> of Formula (1), and a divalent aromatic heterocyclic group may be sufficient as it. A divalent aromatic hydrocarbon group is preferable.
식 (1)의 Y1의 2가의 방향족 탄화수소기로는, 예를 들어 이하의 식 (7)의 기를 들 수 있지만, 이것에 한정되는 것은 아니다. As a divalent aromatic hydrocarbon group of Y<1> of Formula (1), although group of the following Formula (7) is mentioned, for example, It is not limited to this.
(식 (7) 중, R12~R19는, 각각 독립적으로 수소 원자, 1가의 지방족 탄화수소기 또는 할로겐 원자를 갖는 1가의 유기기이다.)(In formula (7), R 12 to R 19 are each independently a hydrogen atom, a monovalent aliphatic hydrocarbon group, or a monovalent organic group having a halogen atom.)
식 (7)의 R12~R19의 1가의 지방족 탄화수소기(바람직하게는 탄소수 1~10, 보다 바람직하게는 탄소수 1~6)로는, 메틸기 등을 들 수 있다. 예를 들어, R12 및 R15~R19가 수소 원자이며, R13 및 R14가 1가의 지방족 탄화수소기여도 된다. Roneun formula (7)
식 (7)의 R12~R19의 할로겐 원자(바람직하게는 불소 원자)를 갖는 1가의 유기기는, 할로겐 원자를 갖는 1가의 지방족 탄화수소기(바람직하게는 탄소수 1~10, 보다 바람직하게는 탄소수 1~6)가 바람직하며, 트리플루오로메틸기 등을 들 수 있다. The monovalent organic group having a halogen atom (preferably a fluorine atom) as R 12 to R 19 in the formula (7) is a monovalent aliphatic hydrocarbon group having a halogen atom (preferably having 1 to 10 carbon atoms, more preferably having 1 to 10 carbon atoms). 1-6) are preferable, and a trifluoromethyl group etc. are mentioned.
식 (1)의 R1 및 R2의 탄소수 1~4(바람직하게는 1 또는 2)의 지방족 탄화수소기로는, 메틸기, 에틸기, n-프로필기, 2-프로필기, n-부틸기 등을 들 수 있다. Examples of the aliphatic hydrocarbon group having 1 to 4 (preferably 1 or 2) carbon atoms for R 1 and R 2 in Formula (1) include a methyl group, an ethyl group, an n-propyl group, a 2-propyl group, and an n-butyl group. can
식 (1)의 R1 및 R2 중 적어도 한 쪽이, 식 (2)로 나타내는 기이며, 모두 식 (2)로 나타내는 기인 것이 바람직하다. It is preferable that at least one of R<1> and R<2> of Formula (1) is group represented by Formula (2), and it is group represented by Formula (2) in both.
식 (2)의 R3~R5의 탄소수 1~3(바람직하게는 1 또는 2)의 지방족 탄화수소기로는, 메틸기, 에틸기, n-프로필기, 2-프로필기 등을 들 수 있다. 메틸기가 바람직하다. A methyl group, an ethyl group, n-propyl group, 2-propyl group etc. are mentioned as a C1-C3 (preferably 1 or 2) aliphatic hydrocarbon group of R<3> -R<5> of Formula (2). A methyl group is preferred.
식 (1)로 나타내는 구조 단위를 갖는 폴리이미드 전구체는, 예를 들어 하기 식 (8)로 나타내는 테트라카복실산 2무수물과, 하기 식 (9)로 나타내는 디아미노 화합물을, N-메틸-2-피롤리돈 등의 유기 용제 중에서 반응시켜 폴리아미드산을 얻고, 하기 식 (10)으로 나타내는 화합물을 첨가하여, 유기 용제 중에서 반응시켜 부분적으로 에스테르기를 도입함으로써 얻을 수 있다. The polyimide precursor which has a structural unit represented by Formula (1) is N-methyl-2-p for tetracarboxylic dianhydride represented by following formula (8), and the diamino compound represented by following formula (9), for example. It can be obtained by reacting in an organic solvent such as rolidone to obtain polyamic acid, adding a compound represented by the following formula (10), reacting in an organic solvent, and partially introducing an ester group.
식 (8)로 나타내는 테트라카복실산 2무수물 및 식 (9)로 나타내는 디아미노 화합물은, 1종 단독으로 사용해도 되며, 2종 이상을 조합해도 된다.The tetracarboxylic dianhydride represented by Formula (8) and the diamino compound represented by Formula (9) may be used individually by 1 type, and may combine 2 or more types.
(식 (8) 중, X1은 식 (1)의 X1에 대응하는 기이다.)(, X 1 in the formula (8) is a group corresponding to X 1 in the formula (1).)
(식 (9) 중, Y1은 식 (1)에서 정의한 바와 같다.)(In formula (9), Y 1 is as defined in formula (1).)
(식 (10) 중, R은 상술한 식 (2)로 나타내는 기이다.)(In formula (10), R is a group represented by formula (2) mentioned above.)
(A) 성분은, 식 (1)로 나타내는 구조 단위 이외의 구조 단위를 가져도 된다. (A) The component may have structural units other than the structural unit represented by Formula (1).
식 (1)로 나타내는 구조 단위 이외의 구조 단위로는, 식 (11)로 나타내는 구조 단위 등을 들 수 있다. As structural units other than the structural unit represented by Formula (1), the structural unit represented by Formula (11), etc. are mentioned.
(식 (11) 중, X2는 1 이상의 방향족기를 갖는 4가의 기로서, -COOR51기와 -CONH-기는 서로 오르토 위치에 있으며, -COOR52기와 -CO-기는 서로 오르토 위치에 있다. Y2는 2가의 방향족기이다. R51 및 R52는, 각각 독립적으로, 수소 원자 또는 탄소수 1~4의 지방족 탄화수소기이다.)(In formula (11), X 2 is a tetravalent group having one or more aromatic groups, -COOR 51 group and -CONH- group are ortho-positioned to each other, -COOR 52 group and -CO- group are mutually ortho-positioned. Y 2 is a divalent aromatic group. R 51 and R 52 are each independently a hydrogen atom or an aliphatic hydrocarbon group having 1 to 4 carbon atoms.)
식 (11)의 X2의 1 이상의 방향족기를 갖는 4가의 기는, 식 (1)의 X1의 1 이상의 방향족기를 갖는 4가의 기와 동일한 것을 들 수 있다. The same thing as the tetravalent group which has one or more aromatic groups of X<1> of Formula (1) is mentioned as the tetravalent group which has one or more aromatic groups of X<2> of Formula (11).
식 (11)의 Y2의 2가의 방향족기는, 식 (1)의 Y1의 2가의 방향족기와 동일한 것을 들 수 있다. The same thing as the divalent aromatic group of Y<1> of Formula (1) is mentioned as the divalent aromatic group of Y<2> of Formula (11).
식 (11)의 R51 및 R52의 탄소수 1~4의 지방족 탄화수소기는, R1 및 R2의 탄소수 1~4의 지방족 탄화수소기와 동일한 것을 들 수 있다. Examples of the aliphatic hydrocarbon group having 1 to 4 carbon atoms for R 51 and R 52 in the formula (11) include the same as those for the aliphatic hydrocarbon group having 1 to 4 carbon atoms for R 1 and R 2 .
식 (1)로 나타내는 구조 단위 이외의 구조 단위는, 1종 단독으로 사용해도 되며, 2종 이상을 조합해도 된다. Structural units other than the structural unit represented by Formula (1) may be used individually by 1 type, and may combine 2 or more types.
식 (1)로 나타내는 구조 단위 이외의 구조 단위의 함유량은, (A) 성분의 전(全)구성 단위에 대하여, 50 몰% 미만인 것이 바람직하다. It is preferable that content of structural units other than the structural unit represented by Formula (1) is less than 50 mol% with respect to all the structural units of (A) component.
(A) 성분에 있어서, 전(全)카복시기 및 전(全)카복시에스테르에 대하여, 식 (2)로 나타내는 기로 에스테르화된 카복시기의 비율이, 50 몰% 이상인 것이 바람직하며, 60~100 몰%가 보다 바람직하며, 70~90 몰%가 더욱 바람직하다. (A) component WHEREIN: It is preferable that the ratio of the carboxy group esterified by the group represented by Formula (2) with respect to all carboxy groups and all carboxy ester is 50 mol% or more, and it is 60-100 mol% is more preferable, and 70-90 mol% is still more preferable.
(A) 성분의 분자량에 특별히 제한은 없지만, 수평균 분자량으로 10,000~200,000인 것이 바람직하다. Although there is no restriction|limiting in particular in the molecular weight of (A) component, It is preferable that it is 10,000-200,000 in number average molecular weight.
수평균 분자량은, 예를 들어 겔퍼미에이션 크로마토그래피법에 의해 측정할 수 있으며, 표준 폴리스티렌 검량선을 이용하여 환산함으로써 구할 수 있다. A number average molecular weight can be measured by the gel permeation chromatography method, for example, and can be calculated|required by converting using a standard polystyrene analytical curve.
(B) 성분은, (바람직하게는 2 이상의) 중합성의 불포화 이중 결합을 포함하는 기(바람직하게는, 광중합 개시제에 의해 중합 가능한 점에서, (메타)아크릴기)를 갖는 것이 바람직하다. (B) 성분은, 2 이상의 중합성의 불포화 이중 결합을 포함하는 기를 갖는 중합성 모노머인 것이 바람직하다. 가교 밀도 및 광 감도의 향상, 현상 후 패턴의 팽윤 억제를 위해, 2~3의, 중합성의 불포화 이중 결합을 포함하는 기를 갖는 것이 바람직하다.(B) It is preferable that component has (preferably 2 or more) group (preferably, a (meth)acryl group from the point which can superpose|polymerize by a photoinitiator) containing a polymerizable unsaturated double bond. (B) It is preferable that component is a polymerizable monomer which has group containing two or more polymerizable unsaturated double bonds. It is preferable to have 2-3 groups containing a polymerizable unsaturated double bond for the improvement of a crosslinking density and photosensitivity, and suppression of swelling of a pattern after image development.
또한, (B) 성분은, 중합성의 불포화 이중 결합을 포함하는 기 이외의 관능기를 갖는 중합성 모노머를 포함해도 된다. 관능기로는, 에폭시기, 옥세탄기 등의 환상 에테르기 등을 들 수 있다.Moreover, (B) component may also contain the polymerizable monomer which has functional groups other than the group containing a polymerizable unsaturated double bond. Cyclic ether groups, such as an epoxy group and an oxetane group, etc. are mentioned as a functional group.
(B) 성분은, 지방족 환상 골격(바람직하게는 탄소수 4~15, 보다 바람직하게는 5~12)을 갖는 중합성 모노머를 포함하는 것이 바람직하다. 이로써, 형성할 수 있는 경화물에 소수성(疎水性)을 부여할 수 있어, 고온 다습 조건하에서의 경화물과 기판간의 접착성 저하를 억제할 수 있다.It is preferable that component (B) contains the polymerizable monomer which has an aliphatic cyclic skeleton (preferably C4-C15, More preferably, it is 5-12). Thereby, hydrophobicity can be provided to the hardened|cured material which can be formed, and the fall of the adhesiveness between the hardened|cured material and a board|substrate under high temperature and high humidity conditions can be suppressed.
(B) 성분은, 하기 식 (3)으로 나타내는 중합성 모노머를 포함하는 것이 바람직하다. (B) It is preferable that a component contains the polymerizable monomer represented by following formula (3).
(식 (3) 중, R6 및 R7은, 각각 독립적으로, 탄소수 1~4의 지방족 탄화수소기 또는 하기 식 (4)로 나타내는 기이다. n1은 0 또는 1이며, n2는 0~2의 정수이며, n1+n2는 1 이상(바람직하게는 2 또는 3)이다. n1개의 R6 및 n2개의 R7 중 적어도 1개(바람직하게는 2 또는 3)는, 하기 식 (4)로 나타내는 기이다.)(In formula (3), R 6 and R 7 are each independently an aliphatic hydrocarbon group having 1 to 4 carbon atoms or a group represented by the following formula (4). n1 is 0 or 1, and n2 is 0 to 2 an integer, and n1+n2 is 1 or more (preferably 2 or 3), and at least one (preferably 2 or 3) of n1 R 6 and n2 R 7 is a group represented by the following formula (4) to be.)
R7이 2개인 경우, 2개의 R7은 동일해도 되며, 상이해도 된다. When R 7 is two, two R 7 may be the same or different.
(식 (4) 중, R9~R11은, 각각 독립적으로, 수소 원자 또는 탄소수 1~3의 지방족 탄화수소기이며, l은 0~10의 정수(바람직하게는 0, 1 또는 2)이다.)(In formula (4), R 9 to R 11 are each independently a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and l is an integer of 0 to 10 (preferably 0, 1 or 2). )
(B) 성분은, 하기 식 (5)로 나타내는 중합성 모노머를 포함하는 것이 보다 바람직하다. It is more preferable that (B) component contains the polymerizable monomer represented by following formula (5).
또한, (B) 성분으로서, 예를 들어 이하의 중합성 모노머를 사용해도 된다. In addition, as (B) component, you may use the following polymerizable monomers, for example.
식 (12) 중, R21~R24는, 각각 독립적으로, 탄소수 1~4의 지방족 탄화수소기 또는 상기 식 (4)로 나타내는 기이다. n3은 1~3의 정수(바람직하게는 2 또는 3)이다. n4는 1~3의 정수(바람직하게는 2 또는 3)이다. n5는 0 또는 1이며, n6은 0 또는 1이다. n5+n6은 1 이상(바람직하게는 2)이다. In formula (12), R 21 to R 24 are each independently a C1-C4 aliphatic hydrocarbon group or a group represented by the formula (4). n3 is an integer of 1-3 (preferably 2 or 3). n4 is an integer of 1-3 (preferably 2 or 3). n5 is 0 or 1, and n6 is 0 or 1. n5+n6 is 1 or more (preferably 2).
R21이 2 이상 존재하는 경우, 2 이상의 R21은 동일해도 되며, 상이해도 된다. When R 21 is the presence of two or more, 2 or more and R 21 may be the same, or different.
R22가 2 이상 존재하는 경우, 2 이상의 R22는 동일해도 되며, 상이해도 된다. When R 22 is the presence of two or more, two or more of R 22 may be the same and, or different.
n3개의 R21 중 적어도 1개(바람직하게는 2 또는 3)는, 상기 식 (4)로 나타내는 기이다. At least one (preferably 2 or 3) of n3 pieces of R 21 is a group represented by the formula (4).
n4개의 R22 중 적어도 1개(바람직하게는 2 또는 3)는, 상기 식 (4)로 나타내는 기이다. At least one (preferably 2 or 3) of n4 pieces of R 22 is a group represented by the formula (4).
n5개의 R23 및 n6개의 R24 중 적어도 1개(바람직하게는 2)는, 상기 식 (4)로 나타내는 기이다. At least one (preferably 2) of n5 pieces of R 23 and n6 pieces of R 24 is a group represented by the formula (4).
식 (3)의 R6 및 R7 및 식 (12)의 R21~R24의 탄소수 1~4의 지방족 탄화수소기로는, 식 (1)의 R1 및 R2의 탄소수 1~4의 지방족 탄화수소기와 동일한 것을 들 수 있다. As the aliphatic hydrocarbon group having 1 to 4 carbon atoms in R 6 and R 7 in the formula (3) and R 21 to R 24 in the formula (12), R 1 and R 2 in the formula (1) are aliphatic hydrocarbons having 1 to 4 carbon atoms The same thing as the group can be mentioned.
식 (4)의 R9~R11의 탄소수 1~3의 지방족 탄화수소기로는, 식 (2)의 R3~R5의 탄소수 1~3의 지방족 탄화수소기와 동일한 것을 들 수 있다. Examples of the aliphatic hydrocarbon group having 1 to 3 carbon atoms for R 9 to R 11 in the formula (4) include the same groups as the aliphatic hydrocarbon group having 1 to 3 carbon atoms for R 3 to R 5 in the formula (2).
(B) 성분은, 지방족 환상 골격을 갖는 중합성 모노머 이외의 중합성 모노머를 포함해도 된다. 이로써, 양호한 기계 특성을 갖는 경화물을 얻을 수 있다.(B) The component may contain polymerizable monomers other than the polymerizable monomer which has an aliphatic cyclic skeleton. Thereby, the hardened|cured material which has favorable mechanical properties can be obtained.
지방족 환상 골격을 갖는 중합성 모노머 이외의 중합성 모노머로는, 예를 들어, 디에틸렌글리콜디아크릴레이트, 트리에틸렌글리콜디아크릴레이트, 테트라에틸렌글리콜디아크릴레이트, 디에틸렌글리콜디메타크릴레이트, 트리에틸렌글리콜디메타크릴레이트, 테트라에틸렌글리콜디메타크릴레이트, 1,4-부탄디올디아크릴레이트, 1,6-헥산디올디아크릴레이트, 1,4-부탄디올디메타크릴레이트, 1,6-헥산디올디메타크릴레이트, 트리메틸올프로판디아크릴레이트, 트리메틸올프로판트리아크릴레이트, 트리메틸올프로판디메타크릴레이트, 트리메틸올프로판트리메타크릴레이트, 펜타에리트리톨트리아크릴레이트, 펜타에리트리톨테트라아크릴레이트, 펜타에리트리톨트리메타크릴레이트, 펜타에리트리톨테트라메타크릴레이트, 테트라메틸올메탄테트라아크릴레이트, 테트라메틸올메탄테트라메타크릴레이트, 디펜타에리트리톨헥사아크릴레이트, 디펜타에리트리톨헥사메타크릴레이트, 에톡시화 펜타에리트리톨테트라아크릴레이트, 에톡시화 이소시아누르산트리아크릴레이트, 에톡시화 이소시아누르산트리메타크릴레이트, 아크릴로일옥시에틸이소시아누레이트, 메타크릴로일옥시에틸이소시아누레이트, 에틸렌옥사이드(EO) 변성 비스페놀A 디아크릴레이트(예를 들어, 시판품으로서, FA324A(히타치카세이 주식회사 제)) 등을 들 수 있다.Examples of the polymerizable monomer other than the polymerizable monomer having an aliphatic cyclic skeleton include diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, tri Ethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, 1,4-butanediol dimethacrylate, 1,6-hexanediol Dimethacrylate, trimethylolpropane diacrylate, trimethylolpropane triacrylate, trimethylolpropane dimethacrylate, trimethylolpropane trimethacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, penta Erythritol trimethacrylate, pentaerythritol tetramethacrylate, tetramethylolmethane tetraacrylate, tetramethylolmethane tetramethacrylate, dipentaerythritol hexaacrylate, dipentaerythritol hexamethacrylate, ethoxy Sihwa pentaerythritol tetraacrylate, ethoxylated isocyanuric acid triacrylate, ethoxylated isocyanuric acid trimethacrylate, acryloyloxyethyl isocyanurate, methacryloyloxyethyl isocyanurate, Ethylene oxide (EO) modified bisphenol A diacrylate (For example, as a commercial item, FA324A (made by Hitachi Kasei Corporation)) etc. are mentioned.
(B) 성분은, 1종 단독으로 사용해도 되며, 2종 이상을 조합해도 된다. (B) A component may be used individually by 1 type, and may combine 2 or more types.
(B) 성분은, 양호한 기계 특성 및 감광 특성을 얻는다는 관점에서, 지방족 환상 골격을 갖는 중합성 모노머 및 지방족 환상 골격을 갖는 중합성 모노머 이외의 중합성 모노머를 포함하는 것이 바람직하다.The component (B) preferably contains a polymerizable monomer other than a polymerizable monomer having an aliphatic cyclic skeleton and a polymerizable monomer having an aliphatic cyclic skeleton from the viewpoint of obtaining good mechanical properties and photosensitive properties.
지방족 환상 골격을 갖는 중합성 모노머 및 지방족 환상 골격을 갖는 중합성 모노머 이외의 중합성 모노머를 포함하는 경우, 지방족 환상 골격을 갖는 중합성 모노머의 함유량은, (A) 성분 100 질량부에 대하여, 1~40 질량부가 바람직하다. 경화물의 소수성 향상의 관점에서, 보다 바람직하게는 5~35 질량부이다. 지방족 환상 골격을 갖는 중합성 모노머 이외의 중합성 모노머의 함유량은, (A) 성분 100 질량부에 대하여, 1~20 질량부가 바람직하다. 경화물의 소수성 향상의 관점에서, 보다 바람직하게는 5~15 질량부이다.When polymerizable monomers other than a polymerizable monomer having an aliphatic cyclic skeleton and a polymerizable monomer having an aliphatic cyclic skeleton are included, the content of the polymerizable monomer having an aliphatic cyclic skeleton is 1 with respect to 100 parts by mass of the component (A) ~40 parts by mass is preferred. From a viewpoint of improving the hydrophobicity of hardened|cured material, More preferably, it is 5-35 mass parts. As for content of polymerizable monomers other than the polymerizable monomer which has an aliphatic cyclic skeleton, 1-20 mass parts is preferable with respect to 100 mass parts of (A) component. From a viewpoint of improving the hydrophobicity of hardened|cured material, More preferably, it is 5-15 mass parts.
(B) 성분의 함유량은, (A) 성분 100 질량부에 대하여, 1~50 질량부가 바람직하다. 경화물의 소수성 향상의 관점에서, 보다 바람직하게는 3~50 질량부, 더욱 바람직하게는 5~40 질량부이다. As for content of (B) component, 1-50 mass parts is preferable with respect to 100 mass parts of (A) component. From a viewpoint of improving the hydrophobicity of hardened|cured material, More preferably, it is 3-50 mass parts, More preferably, it is 5-40 mass parts.
상기 범위 내인 경우, 실용적인 릴리프 패턴이 얻어지기 쉬워, 미노광부의 현상 후 잔재를 억제하기 쉽다. When it is in the said range, it is easy to obtain a practical relief pattern, and it is easy to suppress the residual after image development of an unexposed part.
(C) 성분으로는, 예를 들어, 벤조페논, o-벤조일벤조산메틸, 4-벤조일-4'-메틸디페닐케톤, 디벤질케톤, 플루오레논 등의 벤조페논 유도체, (C) As a component, For example, benzophenone derivatives, such as benzophenone, o-benzoyl methyl benzoate, 4-benzoyl-4'-methyldiphenyl ketone, dibenzyl ketone, fluorenone;
2,2'-디에톡시아세토페논, 2-하이드록시-2-메틸프로피오페논, 1-하이드록시시클로헥실페닐케톤 등의 아세토페논 유도체,acetophenone derivatives such as 2,2'-diethoxyacetophenone, 2-hydroxy-2-methylpropiophenone, and 1-hydroxycyclohexylphenyl ketone;
티옥산톤, 2-메틸티옥산톤, 2-이소프로필티옥산톤, 디에틸티옥산톤 등의 티옥산톤 유도체,thioxanthone derivatives such as thioxanthone, 2-methylthioxanthone, 2-isopropylthioxanthone, and diethylthioxanthone;
벤질, 벤질디메틸케탈, 벤질-β-메톡시에틸아세탈 등의 벤질 유도체,benzyl derivatives such as benzyl, benzyldimethyl ketal, and benzyl-β-methoxyethyl acetal;
벤조인, 벤조인메틸에테르 등의 벤조인 유도체, 및benzoin derivatives such as benzoin and benzoin methyl ether; and
1-페닐-1,2-부탄디온-2-(O-메톡시카보닐)옥심, 1-페닐-1,2-프로판디온-2-(O-메톡시카보닐)옥심, 1-페닐-1,2-프로판디온-2-(O-에톡시카보닐)옥심, 1-페닐-1,2-프로판디온-2-(O-벤조일)옥심, 1,3-디페닐프로판트리온-2-(O-에톡시카보닐)옥심, 1-페닐-3-에톡시프로판트리온-2-(O-벤조일)옥심, 에타논, 1-[9-에틸-6-(2-메틸벤조일)-9H-카바졸-3-일]-, 1-(O-아세틸옥심), 하기 식으로 나타내는 화합물 등의 옥심에스테르류 등을 바람직하게 들 수 있지만, 이들에 한정되는 것은 아니다.1-phenyl-1,2-butanedione-2-(O-methoxycarbonyl)oxime, 1-phenyl-1,2-propanedione-2-(O-methoxycarbonyl)oxime, 1-phenyl- 1,2-propanedione-2-(O-ethoxycarbonyl)oxime, 1-phenyl-1,2-propanedione-2-(O-benzoyl)oxime, 1,3-diphenylpropanetrione-2 -(O-ethoxycarbonyl)oxime, 1-phenyl-3-ethoxypropanetrione-2-(O-benzoyl)oxime, ethanone, 1-[9-ethyl-6-(2-methylbenzoyl) Although oxime esters, such as a compound represented by -9H-carbazol-3-yl]-, 1-(O-acetyloxime), and a following formula, are mentioned preferably, It is not limited to these.
특히 광 감도의 점에서, 옥심에스테르류가 바람직하다. In particular, the point of photosensitivity to oxime esters are preferable.
(C) 성분은, (C1) 하기 식 (15)로 나타내는 화합물(이하, "(C1) 성분"이라고도 한다.)을 함유하는 것이 바람직하다. (C) It is preferable that component (C1) contains the compound (Hereinafter, it is also called "(C1) component".) represented by following formula (15).).
(C1) 성분은, 활성 광선에 대한 감도가 후술하는 (C2) 성분보다 높은 것이 바람직하며, 고감도 감광제인 것이 바람직하다. (C1) It is preferable that the sensitivity with respect to actinic light is higher than the component (C2) mentioned later, and, as for a component, it is preferable that it is a high-sensitivity photosensitizer.
식 (15) 중, R11A는 탄소수 1~12의 알킬기이며, a1은 0~5의 정수이다. R12A는 수소 원자 또는 탄소수 1~12의 알킬기이다. R13A 및 R14A는, 각각 독립적으로 수소 원자, 탄소수 1~12(바람직하게는 탄소수 1~4)의 알킬기, 페닐기 또는 톨릴기를 나타낸다. a1이 2 이상의 정수인 경우, R11A는 각각 동일해도 되며, 상이해도 된다. In formula (15), R 11A is a C1-C12 alkyl group, and a1 is an integer of 0-5. R 12A is a hydrogen atom or an alkyl group having 1 to 12 carbon atoms. R 13A and R 14A each independently represent a hydrogen atom, an alkyl group having 1 to 12 carbon atoms (preferably 1 to 4 carbon atoms), a phenyl group or a tolyl group. When a1 is an integer of 2 or more, R 11A may be the same or different, respectively.
R11A는, 바람직하게는 탄소수 1~4의 알킬기이며, 보다 바람직하게는 메틸기이다. a1은 바람직하게는 1이다. R12A는, 바람직하게는 탄소수 1~4의 알킬기이며, 보다 바람직하게는 에틸기이다. R13A 및 R14A는, 바람직하게는 각각 독립적으로 탄소수 1~4의 알킬기이며, 보다 바람직하게는 메틸기이다. R 11A is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group. a1 is preferably 1. R 12A is preferably an alkyl group having 1 to 4 carbon atoms, more preferably an ethyl group. R 13A and R 14A are preferably each independently an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group.
식 (15)로 나타내는 화합물로는, 예를 들어, 하기 식 (15A)로 나타내는 화합물을 들 수 있으며, BASF 재팬 주식회사 제 "IRGACURE OXE 02"로서 입수 가능하다. As a compound represented by Formula (15), the compound represented by following formula (15A) is mentioned, for example, It can obtain as "IRGACURE OXE 02" by BASF Japan Corporation.
또한, (C) 성분은, (C2) 하기 식 (16)으로 나타내는 화합물(이하, "(C2) 성분"이라고도 한다.)을 함유하는 것이 바람직하다. Moreover, it is preferable that (C) component contains (C2) the compound represented by following formula (16) (Hereinafter, it is also called "(C2) component".).).
(C2) 성분은, 활성 광선에 대한 감도가 (C1) 성분보다 낮은 것이 바람직하며, 표준적인 감도의 감광제인 것이 바람직하다. (C2) It is preferable that the sensitivity with respect to actinic light is lower than the component (C1), and, as for component, it is preferable that it is a photosensitizer of a standard sensitivity.
식 (16) 중, R21A는 탄소수 1~12의 알킬기이며, R22A 및 R23A는, 각각 독립적으로 수소 원자, 탄소수 1~12의 알킬기(바람직하게는 탄소수 1~4), 탄소수 1~12의 알콕시기(바람직하게는 탄소수 1~4), 탄소수 4~10의 시클로알킬기, 페닐기 또는 톨릴기이며, c1은 0~5의 정수이다. c1이 2 이상의 정수인 경우, R21A는 각각 동일해도 되며, 상이해도 된다. In formula (16), R 21A is an alkyl group having 1 to 12 carbon atoms, R 22A and R 23A are each independently a hydrogen atom, an alkyl group having 1 to 12 carbon atoms (preferably 1 to 4 carbon atoms), and 1 to 12 carbon atoms of an alkoxy group (preferably having 1 to 4 carbon atoms), a cycloalkyl group having 4 to 10 carbon atoms, a phenyl group or a tolyl group, and c1 is an integer of 0 to 5. When c1 is an integer of 2 or more, R 21A may be the same or different, respectively.
c1은 바람직하게는 0이다. R22A는, 바람직하게는 탄소수 1~4의 알킬기이며, 보다 바람직하게는 메틸기이다. R23A는, 바람직하게는 탄소수 1~12의 알콕시기이며, 보다 바람직하게는 탄소수 1~4의 알콕시기이며, 더욱 바람직하게는 메톡시기 또는 에톡시기이다. c1 is preferably 0. R 22A is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group. R 23A is preferably an alkoxy group having 1 to 12 carbon atoms, more preferably an alkoxy group having 1 to 4 carbon atoms, still more preferably a methoxy group or an ethoxy group.
식 (16)으로 나타내는 화합물로는, 예를 들어 하기 식 (16A)로 나타내는 화합물을 들 수 있으며, Lambson사 제 "G-1820(PDO)"로서 입수 가능하다. As a compound represented by Formula (16), the compound represented by following formula (16A) is mentioned, for example, It can obtain as "G-1820(PDO)" by Lambson company.
(C) 성분은, 1종 단독으로 사용해도 되며, 2종 이상을 조합해도 된다. (C) A component may be used individually by 1 type, and may combine 2 or more types.
(C) 성분은, (C1) 성분 및 (C2) 성분으로 이루어지는 군에서 선택되는 1 이상을 포함하는 것이 바람직하다. It is preferable that (C) component contains 1 or more chosen from the group which consists of (C1) component and (C2) component.
또한, (C) 성분은, (C1) 성분 및 (C2) 성분을 포함하는 것이 바람직하다. Moreover, it is preferable that (C)component contains (C1) component and (C2) component.
(C) 성분의 함유량은, (A) 성분 100 질량부에 대하여, 0.1~20 질량부가 바람직하며, 보다 바람직하게는 0.1~10 질량부이며, 더욱 바람직하게는 0.1~5 질량부이다. (C) As for content of component, 0.1-20 mass parts is preferable with respect to 100 mass parts of (A) component, More preferably, it is 0.1-10 mass parts, More preferably, it is 0.1-5 mass parts.
상기 범위 내인 경우, 광 가교가 막두께 방향으로 균일해지기 쉬워, 실용적인 릴리프 패턴을 얻기 쉬워진다. When it exists in the said range, photocrosslinking becomes easy to become uniform in a film thickness direction, and it becomes easy to obtain a practical relief pattern.
(C1) 성분을 함유하는 경우, (C1) 성분의 함유량은, 통상, (A) 성분 100 질량부에 대하여 0.05~5.0 질량부이며, 바람직하게는 0.07~2.5 질량부이며, 보다 바람직하게는 0.09~1.0 질량부이다. When (C1) component is contained, content of (C1) component is 0.05-5.0 mass parts with respect to 100 mass parts of (A) component normally, Preferably it is 0.07-2.5 mass parts, More preferably, it is 0.09. ~1.0 parts by mass.
(C2) 성분을 함유하는 경우, (C2) 성분의 함유량은, 통상, (A) 성분 100 질량부에 대하여 0.5~15.0 질량부이며, 바람직하게는 1.0~15.0 질량부이다. (C2) When containing a component, content of (C2) component is 0.5-15.0 mass parts with respect to 100 mass parts of (A) component normally, Preferably it is 1.0-15.0 mass parts.
(C1) 성분 및 (C2) 성분을 함유하는 경우, (C1) 성분의 함유량이 (A) 성분 100 질량부에 대하여 0.05~5.0 질량부이며, 또한, (C2) 성분의 함유량이 (A) 성분 100 질량부에 대하여 0.5~15.0 질량부이면 바람직하다. When (C1) component and (C2) component are contained, content of (C1) component is 0.05-5.0 mass parts with respect to 100 mass parts of (A) component, and content of (C2) component is (A) component It is preferable in it being 0.5-15.0 mass parts with respect to 100 mass parts.
(C1) 성분 및 (C2) 성분을 함유하는 경우, (C1) 성분과 (C2) 성분의 함유량의 질량비는, 바람직하게는 1:2~1:15이며, 보다 바람직하게는 1:3~1:10이다. When (C1) component and (C2) component are contained, the mass ratio of content of (C1) component and (C2) component becomes like this. Preferably it is 1:2-1:15, More preferably, it is 1:3-1. :10.
본 발명의 감광성 수지 조성물은, (D) 환화 촉매를 포함한다.The photosensitive resin composition of this invention contains (D) a cyclization catalyst.
(D) 성분은, 2-(메틸페닐아미노)에탄올, 2-(에틸아닐리노)에탄올, N-페닐디에탄올아민, N-메틸아닐린, N-에틸아닐린, N,N-디메틸아닐린, N-페닐에탄올아민, 4-페닐모르폴린 및 2,2'-(4-메틸페닐이미노)디에탄올로 이루어지는 군에서 선택되는 1 이상인 것이 바람직하며, N-페닐디에탄올아민, N-메틸아닐린, N-에틸아닐린, N,N-디메틸아닐린, N-페닐에탄올아민, 4-페닐모르폴린 및 2,2'-(4-메틸페닐이미노)디에탄올로 이루어지는 군에서 선택되는 1 이상인 것이 보다 바람직하다.(D) component is 2-(methylphenylamino)ethanol, 2-(ethylanilino)ethanol, N-phenyldiethanolamine, N-methylaniline, N-ethylaniline, N,N-dimethylaniline, N-phenyl Preferably at least one selected from the group consisting of ethanolamine, 4-phenylmorpholine and 2,2'-(4-methylphenylimino)diethanol, N-phenyldiethanolamine, N-methylaniline, N-ethyl At least one selected from the group consisting of aniline, N,N-dimethylaniline, N-phenylethanolamine, 4-phenylmorpholine and 2,2'-(4-methylphenylimino)diethanol is more preferable.
(D) 성분은, 하기 식 (17)로 나타내는 화합물을 포함하는 것이 바람직하다.(D) It is preferable that a component contains the compound represented by following formula (17).
(식 (17) 중, R31A~R33A는, 각각 독립적으로, 수소 원자, 1가의 지방족 탄화수소기, 하이드록시기를 갖는 1가의 지방족 탄화수소기, 또는 1가의 방향족기이며, R31A~R33A 중 적어도 1개(바람직하게는 1개)가 1가의 방향족기이다. R31A~R33A는 인접하는 기끼리 환(예를 들어, 치환기(예를 들어, 메틸기, 페닐기)를 가져도 되는 5원환 또는 6원환)을 형성해도 된다.)(In formula (17), R 31A to R 33A are each independently a hydrogen atom, a monovalent aliphatic hydrocarbon group, a monovalent aliphatic hydrocarbon group having a hydroxyl group, or a monovalent aromatic group, and among R 31A to R 33A At least one (preferably one) is a monovalent aromatic group.R 31A to R 33A represent a 5-membered ring that may have a substituent (for example, a methyl group, a phenyl group) between adjacent groups, or 6-membered ring) may be formed.)
바람직하게는, 또한, R31A~R33A 중 적어도 1개는, 1가의 지방족 탄화수소기, 하이드록시기를 갖는 1가의 지방족 탄화수소기, 또는 1가의 방향족기이다.Preferably , at least one of R 31A to R 33A is a monovalent aliphatic hydrocarbon group, a monovalent aliphatic hydrocarbon group having a hydroxyl group, or a monovalent aromatic group.
식 (17)의 R31A~R33A의 1가의 지방족 탄화수소기(바람직하게는 탄소수 1~10, 보다 바람직하게는 탄소수 1~6)로는, 메틸기, 에틸기 등을 들 수 있다.Examples of the monovalent aliphatic hydrocarbon group (preferably having 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms ) of R 31A to R 33A in the formula (17) include a methyl group and an ethyl group.
식 (17)의 R31A~R33A의 하이드록시기를 갖는 1가의 지방족 탄화수소기로는, R31A~R33A의 1가의 지방족 탄화수소기에, 1 이상(바람직하게는 1~3)의 하이드록시기가 결합된 기 등을 들 수 있다. 구체적으로는, 메틸올기, 하이드록시에틸기 등을 들 수 있다. 하이드록시에틸기가 바람직하다.As the monovalent aliphatic hydrocarbon group having a hydroxyl group of R 31A to R 33A in Formula (17), one or more (preferably 1 to 3) hydroxyl groups are bonded to the monovalent aliphatic hydrocarbon group of R 31A to R 33A and the like. Specifically, a methylol group, a hydroxyethyl group, etc. are mentioned. A hydroxyethyl group is preferred.
식 (17)의 R31A~R33A의 1가의 방향족기로는, 1가의 방향족 탄화수소기(바람직하게는 탄소수 6~12, 보다 바람직하게는 탄소수 6~10)여도 되며, 1가의 방향족 복소환식기여도 된다. 1가의 방향족 탄화수소기가 바람직하다. The monovalent aromatic group of R 31A to R 33A in the formula (17) may be a monovalent aromatic hydrocarbon group (preferably having 6 to 12 carbon atoms, more preferably 6 to 10 carbon atoms), or a monovalent aromatic heterocyclic group. . A monovalent aromatic hydrocarbon group is preferable.
1가의 방향족 탄화수소기로는, 페닐기, 나프틸기 등을 들 수 있다.A phenyl group, a naphthyl group, etc. are mentioned as a monovalent|monohydric aromatic hydrocarbon group.
식 (17)의 R31A~R33A의 1가의 방향족기는, 치환기를 가져도 된다. 치환기로는, 상술한 식 (17)의 R31A~R33A의 1가의 지방족 탄화수소기, 및 상술한 식 (17)의 R31A~R33A의 하이드록시기를 갖는 1가의 지방족 탄화수소기와 동일한 것을 들 수 있다. The monovalent aromatic group of R 31A to R 33A in Formula (17) may have a substituent. Examples of the substituent include the same monovalent aliphatic hydrocarbon group as R 31A to R 33A in the above formula (17) and the monovalent aliphatic hydrocarbon group having a hydroxyl group as R 31A to R 33A in the above formula (17). have.
(D) 성분은, 1종 단독으로 사용해도 되며, 2종 이상을 조합해도 된다.(D) A component may be used individually by 1 type, and may combine 2 or more types.
(D) 성분의 함유량은, 이미드화율이나 감도 향상의 관점에서, (A) 성분 100질량부에 대하여, 0.1~20 질량부가 바람직하다. 보존 안정성의 관점에서, 보다 바람직하게는 0.3~15 질량부, 더욱 바람직하게는 0.5~10 질량부이다.(D) As for content of component, 0.1-20 mass parts is preferable with respect to 100 mass parts of (A) component from a viewpoint of an imidation rate or a sensitivity improvement. From a viewpoint of storage stability, More preferably, it is 0.3-15 mass parts, More preferably, it is 0.5-10 mass parts.
본 발명의 감광성 수지 조성물은, (E) 용제를 포함한다.The photosensitive resin composition of this invention contains the (E) solvent.
(E) 성분으로는, N-메틸-2-피롤리돈, γ-부티로락톤, 락트산에틸, 프로필렌글리콜모노메틸에테르아세테이트, 아세트산벤질, n-부틸아세테이트, 에톡시에틸프로피오네이트, 3-메틸메톡시프로피오네이트, N,N-디메틸폼아미드, N,N-디메틸아세트아미드, 디메틸설폭사이드, 헥사메틸포스포릴아미드, 테트라메틸설폰, 시클로헥사논, 시클로펜타논, 디에틸케톤, 디이소부틸케톤, 메틸아밀케톤, N-디메틸모르폴린 등을 들 수 있으며, 통상, 다른 성분을 충분히 용해할 수 있는 것이면 특별히 제한은 없다. (E) As the component, N-methyl-2-pyrrolidone, γ-butyrolactone, ethyl lactate, propylene glycol monomethyl ether acetate, benzyl acetate, n-butyl acetate, ethoxyethyl propionate, 3- Methyl methoxypropionate, N,N-dimethylformamide, N,N-dimethylacetamide, dimethylsulfoxide, hexamethylphosphorylamide, tetramethylsulfone, cyclohexanone, cyclopentanone, diethylketone, diethyl ketone Isobutyl ketone, methyl amyl ketone, N-dimethyl morpholine, etc. are mentioned, Usually, if other components can be fully dissolved, there will be no restriction|limiting in particular.
이 중에서도, 각 성분의 용해성과 감광성 수지막 형성 시의 도포성이 우수한 관점에서, N-메틸-2-피롤리돈, γ-부티로락톤, 락트산에틸, 프로필렌글리콜모노메틸에테르아세테이트, N,N-디메틸폼아미드, N,N-디메틸아세트아미드를 사용하는 것이 바람직하다. Among them, N-methyl-2-pyrrolidone, γ-butyrolactone, ethyl lactate, propylene glycol monomethyl ether acetate, N,N from the viewpoint of excellent solubility of each component and applicability at the time of forming a photosensitive resin film. -Dimethylformamide and N,N-dimethylacetamide are preferably used.
또한, (E) 성분으로는, 하기 식 (21)로 나타내는 화합물을 사용해도 된다. In addition, as (E) component, you may use the compound represented by following formula (21).
(식 중, R41~R43은, 각각 독립적으로, 탄소수 1~10의 알킬기이다.)(Wherein, R 41 to R 43 are each independently an alkyl group having 1 to 10 carbon atoms.)
식 (21) 중에 있어서의 R41~R43의 탄소수 1~10(바람직하게는 1~3, 보다 바람직하게는 1 또는 3)의 알킬기로는, 메틸기, 에틸기, n-프로필기, 이소프로필기, n-부틸기, t-부틸기, 펜틸기, 헥실기, 헵틸기, 옥틸기 등을 들 수 있다. Examples of the alkyl group having 1 to 10 carbon atoms (preferably 1 to 3, more preferably 1 or 3) of R 41 to R 43 in formula (21) include a methyl group, an ethyl group, an n-propyl group, and an isopropyl group. , n-butyl group, t-butyl group, pentyl group, hexyl group, heptyl group, octyl group, etc. are mentioned.
식 (21)로 나타내는 화합물은, 3-메톡시-N,N-디메틸프로판아미드(예를 들어, 상품명 "KJCMPA-100" (KJ 케미컬즈 주식회사 제))인 것이 바람직하다. The compound represented by the formula (21) is preferably 3-methoxy-N,N-dimethylpropanamide (eg, trade name “KJCMPA-100” (manufactured by KJ Chemicals)).
(E) 성분은, 1종 단독으로 사용해도 되며, 2종 이상을 조합해도 된다. (E) A component may be used individually by 1 type, and may combine 2 or more types.
(E) 성분의 함유량은, 특별히 한정되지 않지만, 일반적으로, (A) 성분 100 질량부에 대하여, 50~1000 질량부이다. Although content of (E) component is not specifically limited, Generally, it is 50-1000 mass parts with respect to 100 mass parts of (A) component.
본 발명의 감광성 수지 조성물은, 중합 반응 촉진의 관점에서, (F) 열중합 개시제(이하, "(F) 성분"이라고도 한다.)를 더 포함해도 된다. The photosensitive resin composition of this invention may further contain the (F) thermal-polymerization initiator (henceforth "(F) component".) from a viewpoint of polymerization reaction acceleration|stimulation.
(F) 성분으로는, 성막 시에 용제를 제거하기 위한 가열(건조)에서는 분해되지 않고, 경화 시의 가열에 의해 분해되어 라디칼을 발생하고, (B) 성분끼리, 또는 (A) 성분 및 (B) 성분의 중합 반응을 촉진하는 화합물이 바람직하다. As the component (F), it is not decomposed by heating (drying) to remove the solvent at the time of film formation, but is decomposed by heating during curing to generate radicals, (B) components each other, or (A) component and ( B) A compound that promotes the polymerization reaction of the component is preferred.
(F) 성분은 분해점이, 110℃ 이상 200℃ 이하의 화합물이 바람직하며, 보다 저온에서 중합 반응을 촉진하는 관점에서, 110℃ 이상 175℃ 이하의 화합물이 보다 바람직하다. (F) The decomposition point, a compound of 110 degreeC or more and 200 degrees C or less is preferable, From a viewpoint of accelerating|stimulating a polymerization reaction at lower temperature, the compound of 110 degreeC or more and 175 degrees C or less is more preferable.
구체예로는, 메틸에틸케톤퍼옥시드 등의 케톤퍼옥시드, 1,1-디(t-헥실퍼옥시)-3,3,5-트리메틸시클로헥산, 1,1-디(t-헥실퍼옥시)시클로헥산, 1,1-디(t-부틸퍼옥시)시클로헥산 등의 퍼옥시케탈, 1,1,3,3-테트라메틸부틸하이드로퍼옥시드, 쿠멘하이드로퍼옥시드, p-멘탄하이드로퍼옥시드 등의 하이드로퍼옥시드, 디쿠밀퍼옥시드, 디-t-부틸퍼옥시드 등의 디알킬퍼옥시드, 디라우로일퍼옥시드, 디벤조일퍼옥시드 등의 디아실퍼옥시드, 디(4-t-부틸시클로헥실)퍼옥시디카보네이트, 디(2-에틸헥실)퍼옥시디카보네이트 등의 퍼옥시디카보네이트, t-부틸퍼옥시-2-에틸헥사노에이트, t-헥실퍼옥시이소프로필모노카보네이트, t-부틸퍼옥시벤조에이트, 1,1,3,3-테트라메틸부틸퍼옥시-2-에틸헥사노에이트 등의 퍼옥시에스테르, 비스(1-페닐-1-메틸에틸)퍼옥시드 등을 들 수 있다. 시판품으로는, 상품명 "퍼쿠밀 D", "퍼쿠밀 P", "퍼쿠밀 H" (이상, 니치유 주식회사 제) 등을 들 수 있다. Specific examples include ketone peroxides such as methyl ethyl ketone peroxide, 1,1-di(t-hexylperoxy)-3,3,5-trimethylcyclohexane, 1,1-di(t-hexylperoxy) ) cyclohexane, peroxyketals such as 1,1-di(t-butylperoxy)cyclohexane, 1,1,3,3-tetramethylbutylhydroperoxide, cumene hydroperoxide, p-menthanhide Hydroperoxides such as loperoxide, dialkyl peroxides such as dicumyl peroxide and di-t-butyl peroxide, diacyl peroxides such as dilauroyl peroxide and dibenzoyl peroxide, di(4 Peroxydicarbonate such as -t-butylcyclohexyl)peroxydicarbonate and di(2-ethylhexyl)peroxydicarbonate, t-butylperoxy-2-ethylhexanoate, t-hexylperoxyisopropyl monocarbonate, peroxyesters such as t-butylperoxybenzoate and 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate; bis(1-phenyl-1-methylethyl)peroxide; and the like. can As a commercial item, "Percumyl D", "Percumyl P", "Percumyl H" (above, Nichiyu Corporation make), etc. are mentioned as a commercial item.
(F) 성분을 함유하는 경우, (F) 성분의 함유량은, (A) 성분 100 질량부에 대하여, 0.1~20 질량부가 바람직하며, 양호한 내플럭스(flux)성의 확보를 위해 0.2~20 질량부가 보다 바람직하며, 건조 시의 분해에 의한 용해성 저하 억제의 관점에서, 0.3~10 질량부가 더욱 바람직하다. When the component (F) is contained, the content of the component (F) is preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the component (A), and 0.2 to 20 parts by mass to ensure good flux resistance. More preferably, 0.3-10 mass parts is still more preferable from a viewpoint of the solubility fall suppression by decomposition|disassembly at the time of drying.
본 발명의 감광성 수지 조성물은, 산화 방지제를 더 포함해도 된다. 산화 방지제를 함유함으로써, 고온 보존 또는 리플로 처리에서 발생하는 산소 라디칼 및 과산화물 라디칼을 보충하여, 접착성(밀착성)의 저하를 보다 억제할 수 있다. 또한, 절연 신뢰성 시험 시의 전극의 산화를 억제할 수 있고, 전극으로부터 수지막 또는 패턴 수지막으로의 확산을 억제할 수 있다.The photosensitive resin composition of this invention may further contain antioxidant. By containing antioxidant, the oxygen radical and peroxide radical which generate|occur|produce in high temperature storage or reflow process can be supplemented, and the fall of adhesiveness (adhesion property) can be suppressed more. Moreover, oxidation of the electrode at the time of an insulation reliability test can be suppressed, and diffusion from an electrode to a resin film or a pattern resin film can be suppressed.
산화 방지제로는, N,N'-비스[2-[2-(3,5-디-tert-부틸-4-하이드록시페닐)에틸카보닐옥시]에틸]옥사미드, N,N'-비스-3-(3,5-디-tert-부틸-4'-하이드록시페닐)프로피오닐헥사메틸렌디아민, 1,3,5-트리스(3-하이드록시-4-tert-부틸-2,6-디메틸벤질)-1,3,5-트리아진-2,4,6(1H,3H,5H)-트리온,Antioxidants include N,N'-bis[2-[2-(3,5-di-tert-butyl-4-hydroxyphenyl)ethylcarbonyloxy]ethyl]oxamide, N,N'-bis -3-(3,5-di-tert-butyl-4'-hydroxyphenyl)propionylhexamethylenediamine, 1,3,5-tris(3-hydroxy-4-tert-butyl-2,6- dimethylbenzyl)-1,3,5-triazine-2,4,6(1H,3H,5H)-trione;
2,6-디-t-부틸-4-메틸페놀, 2,5-디-t-부틸-하이드로퀴논, 옥타데실-3-(3,5-디-t-부틸-4-하이드록시페닐)프로피오네이트, 4,4'-메틸렌비스(2,6-디-t-부틸페놀), 4,4'-티오-비스(3-메틸-6-t-부틸페놀), 4,4'-부틸리덴-비스(3-메틸-6-t-부틸페놀), 트리에틸렌글리콜-비스[3-(3-t-부틸-5-메틸-4-하이드록시페닐)프로피오네이트], 2,2-티오-디에틸렌비스[3-(3,5-디-t-부틸-4-하이드록시페닐)프로피오네이트], N,N'-헥사메틸렌비스(3,5-디-t-부틸-4-하이드록시-하이드로신나마미드), 이소옥틸-3-(3,5-디-t-부틸-4-하이드록시페닐)프로피오네이트, 1,3,5-트리스[4-트리에틸메틸-3-하이드록시-2,6-디메틸벤질]-1,3,5-트리아진-2,4,6-(1H,3H,5H)-트리온, 2,2'-메틸렌-비스(4-메틸-6-t-부틸페놀), 2,2'-메틸렌-비스(4-에틸-6-t-부틸페놀),2,6-di-t-butyl-4-methylphenol, 2,5-di-t-butyl-hydroquinone, octadecyl-3-(3,5-di-t-butyl-4-hydroxyphenyl) Propionate, 4,4'-methylenebis(2,6-di-t-butylphenol), 4,4'-thio-bis(3-methyl-6-t-butylphenol), 4,4'- Butylidene-bis (3-methyl-6-t-butylphenol), triethylene glycol-bis [3- (3-t-butyl-5-methyl-4-hydroxyphenyl) propionate], 2, 2-thio-diethylenebis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate], N,N'-hexamethylenebis(3,5-di-t-butyl -4-hydroxy-hydrocinnamamide), isooctyl-3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, 1,3,5-tris[4-triethyl Methyl-3-hydroxy-2,6-dimethylbenzyl]-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 2,2'-methylene-bis( 4-methyl-6-t-butylphenol), 2,2'-methylene-bis(4-ethyl-6-t-butylphenol),
트리스-(3,5-디-t-부틸-4-하이드록시벤질)-이소시아누레이트, 1,3,5-트리메틸-2,4,6-트리스(3,5-디-t-부틸-4-하이드록시벤질)벤젠, 1,3,5-트리스(3-하이드록시-2,6-디메틸-4-이소프로필벤질)-1,3,5-트리아진-2,4,6-(1H,3H,5H)-트리온, 1,3,5-트리스(4-t-부틸-3-하이드록시-2,6-디메틸벤질)-1,3,5-트리아진-2,4,6-(1H,3H,5H)-트리온, 1,3,5-트리스(4-s-부틸-3-하이드록시-2,6-디메틸벤질)-1,3,5-트리아진-2,4,6-(1H,3H,5H)-트리온, 1,3,5-트리스[4-(1-에틸프로필)-3-하이드록시-2,6-디메틸벤질]-1,3,5-트리아진-2,4,6-(1H,3H,5H)-트리온, 1,3,5-트리스(4-t-부틸-3-하이드록시-2-메틸벤질)-1,3,5-트리아진-2,4,6-(1H,3H,5H)-트리온, 1,3,5-트리스(4-t-부틸-3-하이드록시-2,5-디메틸벤질)-1,3,5-트리아진-2,4,6-(1H,3H,5H)-트리온,Tris-(3,5-di-t-butyl-4-hydroxybenzyl)-isocyanurate, 1,3,5-trimethyl-2,4,6-tris(3,5-di-t-butyl -4-hydroxybenzyl)benzene, 1,3,5-tris(3-hydroxy-2,6-dimethyl-4-isopropylbenzyl)-1,3,5-triazine-2,4,6- (1H,3H,5H)-trione, 1,3,5-tris(4-t-butyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-triazine-2,4 ,6-(1H,3H,5H)-trione, 1,3,5-tris(4-s-butyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-triazine- 2,4,6-(1H,3H,5H)-trione, 1,3,5-tris[4-(1-ethylpropyl)-3-hydroxy-2,6-dimethylbenzyl]-1,3 ,5-triazine-2,4,6-(1H,3H,5H)-trione, 1,3,5-tris(4-t-butyl-3-hydroxy-2-methylbenzyl)-1, 3,5-triazine-2,4,6-(1H,3H,5H)-trione, 1,3,5-tris(4-t-butyl-3-hydroxy-2,5-dimethylbenzyl) -1,3,5-triazine-2,4,6-(1H,3H,5H)-trione;
펜타에리트리틸-테트라키스[3-(3,5-디-t-부틸-4-하이드록시페닐)프로피오네이트], 1,6-헥산디올-비스[3-(3,5-디-t-부틸-4-하이드록시페닐)프로피오네이트], 1,3,5-트리스(4-t-부틸-3-하이드록시-2,5,6-트리메틸벤질)-1,3,5-트리아진-2,4,6-(1H,3H,5H)-트리온, 1,3,5-트리스(4-t-부틸-5-에틸-3-하이드록시-2,6-디메틸벤질)-1,3,5-트리아진-2,4,6-(1H,3H,5H)-트리온, 1,3,5-트리스(4-t-부틸-6-에틸-3-하이드록시-2,5-디메틸벤질)-1,3,5-트리아진-2,4,6-(1H,3H,5H)-트리온, 1,3,5-트리스(4-t-부틸-5,6-디에틸-3-하이드록시-2-메틸벤질)-1,3,5-트리아진-2,4,6-(1H,3H,5H)-트리온, 1,3,5-트리스(4-t-부틸-6-에틸-3-하이드록시-2-메틸벤질)-1,3,5-트리아진-2,4,6-(1H,3H,5H)-트리온,Pentaerythrityl-tetrakis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate], 1,6-hexanediol-bis[3-(3,5-di-) t-Butyl-4-hydroxyphenyl)propionate], 1,3,5-tris(4-t-butyl-3-hydroxy-2,5,6-trimethylbenzyl)-1,3,5- Triazine-2,4,6-(1H,3H,5H)-trione, 1,3,5-tris(4-t-butyl-5-ethyl-3-hydroxy-2,6-dimethylbenzyl) -1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 1,3,5-tris(4-t-butyl-6-ethyl-3-hydroxyl- 2,5-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 1,3,5-tris(4-t-butyl-5, 6-diethyl-3-hydroxy-2-methylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 1,3,5-tris( 4-t-Butyl-6-ethyl-3-hydroxy-2-methylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione;
1,3,5-트리스(4-t-부틸-5-에틸-3-하이드록시-2-메틸벤질)-1,3,5-트리아진-2,4,6-(1H,3H,5H)-트리온, 1,3,5-트리스(3-하이드록시-2,6-디메틸-4-페닐벤질)-1,3,5-트리아진-2,4,6-(1H,3H,5H)-트리온, 및1,3,5-tris(4-t-butyl-5-ethyl-3-hydroxy-2-methylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H )-trione, 1,3,5-tris(3-hydroxy-2,6-dimethyl-4-phenylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H, 5H)-trion, and
1,3,5-트리스(4-t-부틸-3-하이드록시-2,6-디메틸벤질)이소시아누르산 등을 들 수 있다.1,3,5-tris(4-t-butyl-3-hydroxy-2,6-dimethylbenzyl)isocyanuric acid etc. are mentioned.
산화 방지제는, 1종 단독으로 사용해도 되며, 2종 이상을 조합해도 된다.An antioxidant may be used individually by 1 type, and may combine 2 or more types.
산화 방지제를 포함하는 경우, 산화 방지제의 함유량은, (A) 성분 100 질량부에 대하여, 0.1~20 질량부가 바람직하고, 보다 바람직하게는 0.1~10 질량부이며, 더욱 바람직하게는 0.1~5 질량부이다.When antioxidant is included, as for content of antioxidant, 0.1-20 mass parts is preferable with respect to 100 mass parts of (A) component, More preferably, it is 0.1-10 mass parts, More preferably, it is 0.1-5 mass parts. is wealth
본 발명의 감광성 수지 조성물은, 커플링제(접착 보조제), 계면 활성제 또는 레벨링제, 방청제 및 중합 금지제 등을 더 함유해도 된다.The photosensitive resin composition of this invention may contain a coupling agent (adhesion auxiliary agent), surfactant, or a leveling agent, a rust preventive agent, a polymerization inhibitor, etc. further.
통상, 커플링제는, 현상 후의 가열 처리에 있어서, (A) 성분과 반응하여 가교하거나, 또는 가열 처리하는 공정에 있어서 커플링제 자체가 중합된다. 이로써, 얻어지는 경화물과 기판의 접착성을 보다 향상시킬 수 있다.Usually, in the heat processing after image development, a coupling agent reacts with (A) component and bridge|crosslinks, or in the process of heat-processing, coupling agent itself superposes|polymerizes. Thereby, the adhesiveness of the hardened|cured material obtained and a board|substrate can be improved more.
바람직한 실란 커플링제로는, 우레아 결합(-NH-CO-NH-)을 갖는 화합물을 들 수 있다. 이로써, 230℃ 이하의 저온하에서 경화를 실시한 경우도 기판과의 접착성을 더욱 높일 수 있다.As a preferable silane coupling agent, the compound which has a urea bond (-NH-CO-NH-) is mentioned. Thereby, even when hardening is performed under the low temperature of 230 degreeC or less, adhesiveness with a board|substrate can be improved further.
저온에서의 경화를 실시했을 때의 접착성의 발현이 우수하기 때문에, 하기 식 (13)으로 나타내는 화합물이 보다 바람직하다. Since it is excellent in adhesive expression at the time of hardening at low temperature, the compound represented by following formula (13) is more preferable.
(식 (13) 중, R31 및 R32는, 각각 독립적으로 탄소수 1~5의 알킬기이다. a는 1~10의 정수이며, b는 1~3의 정수이다.)(In formula (13), R 31 and R 32 are each independently an alkyl group having 1 to 5 carbon atoms. a is an integer of 1 to 10, and b is an integer of 1 to 3.)
식 (13)으로 나타내는 화합물의 구체예로는, 우레이도메틸트리메톡시실란, 우레이도메틸트리에톡시실란, 2-우레이도에틸트리메톡시실란, 2-우레이도에틸트리에톡시실란, 3-우레이도프로필트리메톡시실란, 3-우레이도프로필트리에톡시실란, 4-우레이도부틸트리메톡시실란, 4-우레이도부틸트리에톡시실란 등을 들 수 있으며, 바람직하게는 3-우레이도프로필트리에톡시실란이다. Specific examples of the compound represented by the formula (13) include ureidomethyltrimethoxysilane, ureidomethyltriethoxysilane, 2-ureidoethyltrimethoxysilane, 2-ureidoethyltriethoxysilane, 3 -Ureidopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 4-ureidobutyltrimethoxysilane, 4-ureidobutyltriethoxysilane, etc. are mentioned, Preferably 3-urea Idopropyltriethoxysilane.
실란 커플링제로서, 하이드록시기 또는 글리시딜기를 갖는 실란 커플링제를 사용해도 된다. 하이드록시기 또는 글리시딜기를 갖는 실란 커플링제, 및 분자 내에 우레아 결합을 갖는 실란 커플링제를 병용하면, 저온 경화 시의 경화물의 기판에 대한 접착성을 더욱 향상시킬 수 있다.As a silane coupling agent, you may use the silane coupling agent which has a hydroxyl group or a glycidyl group. When a silane coupling agent having a hydroxyl group or a glycidyl group and a silane coupling agent having a urea bond in the molecule are used together, the adhesion of the cured product to the substrate during low-temperature curing can be further improved.
하이드록시기 또는 글리시딜기를 갖는 실란 커플링제로는, 메틸페닐실란디올, 에틸페닐실란디올, n-프로필페닐실란디올, 이소프로필페닐실란디올, n-부틸페닐실란디올, 이소부틸페닐실란디올, tert-부틸페닐실란디올, 디페닐실란디올, 에틸메틸페닐실라놀, n-프로필메틸페닐실라놀, 이소프로필메틸페닐실라놀, n-부틸메틸페닐실라놀, 이소부틸메틸페닐실라놀, tert-부틸메틸페닐실라놀, 에틸n-프로필페닐실라놀, 에틸이소프로필페닐실라놀, n-부틸에틸페닐실라놀, 이소부틸에틸페닐실라놀, tert-부틸에틸페닐실라놀, 메틸디페닐실라놀, 에틸디페닐실라놀, n-프로필디페닐실라놀, 이소프로필디페닐실라놀, n-부틸디페닐실라놀, 이소부틸디페닐실라놀, tert-부틸디페닐실라놀, 페닐실란트리올, 1,4-비스(트리하이드록시실릴)벤젠, 1,4-비스(메틸디하이드록시실릴)벤젠, 1,4-비스(에틸디하이드록시실릴)벤젠, 1,4-비스(프로필디하이드록시실릴)벤젠, 1,4-비스(부틸디하이드록시실릴)벤젠, 1,4-비스(디메틸하이드록시실릴)벤젠, 1,4-비스(디에틸하이드록시실릴)벤젠, 1,4-비스(디프로필하이드록시실릴)벤젠, 1,4-비스(디부틸하이드록시실릴)벤젠, 및 하기 식 (14)로 나타내는 화합물 등을 들 수 있다. 그 중에서도, 특히, 기판과의 접착성을 보다 향상시키기 위해, 식 (14)로 나타내는 화합물이 바람직하다. Examples of the silane coupling agent having a hydroxyl group or a glycidyl group include methylphenylsilanediol, ethylphenylsilanediol, n-propylphenylsilanediol, isopropylphenylsilanediol, n-butylphenylsilanediol, isobutylphenylsilanediol, tert-butylphenylsilanediol, diphenylsilanediol, ethylmethylphenylsilanol, n-propylmethylphenylsilanol, isopropylmethylphenylsilanol, n-butylmethylphenylsilanol, isobutylmethylphenylsilanol, tert-butylmethylphenylsilanol, Ethyl n-propylphenylsilanol, ethylisopropylphenylsilanol, n-butylethylphenylsilanol, isobutylethylphenylsilanol, tert-butylethylphenylsilanol, methyldiphenylsilanol, ethyldiphenylsilanol, n-propyldiphenylsilanol, isopropyldiphenylsilanol, n-butyldiphenylsilanol, isobutyldiphenylsilanol, tert-butyldiphenylsilanol, phenylsilanetriol, 1,4-bis(tri Hydroxysilyl)benzene, 1,4-bis(methyldihydroxysilyl)benzene, 1,4-bis(ethyldihydroxysilyl)benzene, 1,4-bis(propyldihydroxysilyl)benzene, 1, 4-bis(butyldihydroxysilyl)benzene, 1,4-bis(dimethylhydroxysilyl)benzene, 1,4-bis(diethylhydroxysilyl)benzene, 1,4-bis(dipropylhydroxysilyl) ) benzene, 1,4-bis(dibutylhydroxysilyl)benzene, and the compound represented by following formula (14), etc. are mentioned. Especially, in order to improve more especially adhesiveness with a board|substrate, the compound represented by Formula (14) is preferable.
(식 (14) 중, R33은 하이드록시기 또는 글리시딜기를 갖는 1가의 유기기이며, R34 및 R35는, 각각 독립적으로 탄소수 1~5의 알킬기이다. c는 1~10의 정수이며, d는 1~3의 정수이다.) (In formula (14), R 33 is a monovalent organic group having a hydroxyl group or a glycidyl group, and R 34 and R 35 are each independently an alkyl group having 1 to 5 carbon atoms. c is an integer of 1 to 10 and d is an integer from 1 to 3.)
식 (14)로 나타내는 화합물로는, 하이드록시메틸트리메톡시실란, 하이드록시메틸트리에톡시실란, 2-하이드록시에틸트리메톡시실란, 2-하이드록시에틸트리에톡시실란, 3-하이드록시프로필트리메톡시실란, 3-하이드록시프로필트리에톡시실란, 4-하이드록시부틸트리메톡시실란, 4-하이드록시부틸트리에톡시실란, 글리시독시메틸트리메톡시실란, 글리시독시메틸트리에톡시실란, 2-글리시독시에틸트리메톡시실란, 2-글리시독시에틸트리에톡시실란, 3-글리시독시프로필트리메톡시실란, 3-글리시독시프로필트리에톡시실란, 4-글리시독시부틸트리메톡시실란, 4-글리시독시부틸트리에톡시실란 등을 들 수 있다. As a compound represented by Formula (14), hydroxymethyltrimethoxysilane, hydroxymethyltriethoxysilane, 2-hydroxyethyltrimethoxysilane, 2-hydroxyethyltriethoxysilane, 3-hydroxy Propyltrimethoxysilane, 3-hydroxypropyltriethoxysilane, 4-hydroxybutyltrimethoxysilane, 4-hydroxybutyltriethoxysilane, glycidoxymethyltrimethoxysilane, glycidoxymethyltri Ethoxysilane, 2-glycidoxyethyltrimethoxysilane, 2-glycidoxyethyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 4- Glycidoxybutyltrimethoxysilane, 4-glycidoxybutyltriethoxysilane, etc. are mentioned.
하이드록시기 또는 글리시딜기를 갖는 실란 커플링제는, 질소 원자를 갖는 기를 더 포함하는 것이 바람직하며, 아미노기 또는 아미드 결합을 더 갖는 실란 커플링제가 바람직하다. It is preferable that the silane coupling agent which has a hydroxyl group or a glycidyl group further contains the group which has a nitrogen atom, and the silane coupling agent which further has an amino group or an amide bond is preferable.
아미노기를 더 갖는 실란 커플링제로는, 비스(2-하이드록시메틸)-3-아미노프로필트리에톡시실란, 비스(2-하이드록시메틸)-3-아미노프로필트리메톡시실란, 비스(2-글리시독시메틸)-3-아미노프로필트리에톡시실란, 비스(2-하이드록시메틸)-3-아미노프로필트리메톡시실란 등을 들 수 있다. Examples of the silane coupling agent further having an amino group include bis(2-hydroxymethyl)-3-aminopropyltriethoxysilane, bis(2-hydroxymethyl)-3-aminopropyltrimethoxysilane, and bis(2- Glycidoxymethyl)-3-aminopropyltriethoxysilane, bis(2-hydroxymethyl)-3-aminopropyltrimethoxysilane, etc. are mentioned.
아미드 결합을 더 갖는 실란 커플링제로는, R36-(CH2)e-CO-NH-(CH2)f-Si(OR37)3(R36은 하이드록시기 또는 글리시딜기이며, e 및 f는, 각각 독립적으로, 1~3의 정수이며, R37은 메틸기, 에틸기 또는 프로필기이다)으로 나타내는 화합물 등을 들 수 있다.As a silane coupling agent further having an amide bond, R 36 -(CH 2 ) e -CO-NH-(CH 2 ) f -Si(OR 37 ) 3 (R 36 is a hydroxy group or a glycidyl group, e and f is each independently an integer of 1 to 3, and R 37 is a methyl group, an ethyl group, or a propyl group).
실란 커플링제는, 1종 단독으로 사용해도 되며, 2종 이상을 조합해도 된다.A silane coupling agent may be used individually by 1 type, and may combine 2 or more types.
실란 커플링제를 사용하는 경우, 실란 커플링제의 함유량은, (A) 성분 100 질량부에 대하여, 0.1~20 질량부가 바람직하며, 0.3~10 질량부가 보다 바람직하며, 1~10 질량부가 더욱 바람직하다.When using a silane coupling agent, 0.1-20 mass parts is preferable with respect to 100 mass parts of (A) component, as for content of a silane coupling agent, 0.3-10 mass parts is more preferable, 1-10 mass parts is still more preferable. .
계면 활성제 또는 레벨링제를 포함함으로써, 도포성(예를 들어 스트리에이션(막두께의 불균일) 억제) 및 현상성을 향상시킬 수 있다. By including surfactant or leveling agent, applicability|paintability (for example, suppression of striation (uniformity of a film thickness)) and developability can be improved.
계면 활성제 또는 레벨링제로는, 예를 들어, 폴리옥시에틸렌라우릴에테르, 폴리옥시에틸렌스테아릴에테르, 폴리옥시에틸렌올레일에테르, 폴리옥시에틸렌옥틸페놀에테르 등을 들 수 있고, 시판품으로는, 상품명 "메가팍크 F171", "F173", "R-08" (이상, DIC 주식회사 제), 상품명 "플로라드 FC430", "FC431" (이상, 스미토모 스리엠 주식회사 제), 상품명 "오르가노실록산폴리머 KP341", "KBM303", "KBM403", "KBM803" (이상, 신에츠 화학공업 주식회사 제) 등을 들 수 있다. Examples of the surfactant or leveling agent include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octyl phenol ether and the like. Megapack F171", "F173", "R-08" (above, manufactured by DIC Corporation), brand names "Florard FC430", "FC431" (above, manufactured by Sumitomo 3M Corporation), brand name "organosiloxane polymer KP341" , "KBM303", "KBM403", and "KBM803" (above, manufactured by Shin-Etsu Chemical Industry Co., Ltd.) and the like.
계면 활성제 및 레벨링제는, 1종 단독으로 사용해도 되며, 2종 이상을 조합해도 된다. Surfactant and a leveling agent may be used individually by 1 type, and may combine 2 or more types.
계면 활성제 또는 레벨링제를 포함하는 경우, 계면 활성제 또는 레벨링제의 함유량은, (A) 성분 100 질량부에 대하여 0.01~10 질량부가 바람직하며, 0.05~5 질량부가 보다 바람직하며, 0.05~3 질량부가 더욱 바람직하다. When surfactant or a leveling agent is included, 0.01-10 mass parts is preferable with respect to 100 mass parts of (A) component, as for content of surfactant or a leveling agent, 0.05-5 mass parts is more preferable, 0.05-3 mass parts more preferably.
방청제를 포함함으로써, 구리 및 구리 합금의 부식 억제나 변색을 방지할 수 있다.By containing a rust preventive agent, corrosion suppression and discoloration of copper and a copper alloy can be prevented.
방청제로는, 예를 들어, 트리아졸 유도체 및 테트라졸 유도체 등을 들 수 있다.As a rust preventive agent, a triazole derivative, a tetrazole derivative, etc. are mentioned, for example.
방청제는, 1종 단독으로 사용해도 되며, 2종 이상을 조합해도 된다.A rust preventive agent may be used individually by 1 type, and may combine 2 or more types.
방청제를 사용하는 경우, 방청제의 함유량은, (A) 성분 100 질량부에 대하여 0.01~10 질량부가 바람직하며, 0.1~5 질량부가 보다 바람직하며, 0.5~3 질량부가 더욱 바람직하다.When using a rust preventive agent, 0.01-10 mass parts is preferable with respect to 100 mass parts of (A) component, as for content of a rust preventive agent, 0.1-5 mass parts is more preferable, 0.5-3 mass parts is still more preferable.
중합 금지제를 함유함으로써, 양호한 보존 안정성을 확보할 수 있다.By containing a polymerization inhibitor, favorable storage stability is securable.
중합 금지제로는, 라디칼 중합 금지제, 라디칼 중합 억제제 등을 들 수 있다.As a polymerization inhibitor, a radical polymerization inhibitor, a radical polymerization inhibitor, etc. are mentioned.
중합 금지제로는, 예를 들어, p-메톡시페놀, 디페닐-p-벤조퀴논, 벤조퀴논, 하이드로퀴논, 피로갈롤, 페노티아진, 레조르시놀, 오르토디니트로벤젠, 파라디니트로벤젠, 메타디니트로벤젠, 페난트라퀴논, N-페닐-2-나프틸아민, 쿠페론, 2,5-톨루퀴논, 탄닌산, 파라벤질아미노페놀, 니트로소아민류 등을 들 수 있다. Examples of the polymerization inhibitor include p-methoxyphenol, diphenyl-p-benzoquinone, benzoquinone, hydroquinone, pyrogallol, phenothiazine, resorcinol, orthodinitrobenzene, paradinitrobenzene, meta dinitrobenzene, phenanthraquinone, N-phenyl-2-naphthylamine, cuperone, 2,5-toluquinone, tannic acid, parabenzylaminophenol, nitrosamines, etc. are mentioned.
중합 금지제는, 1종 단독으로 사용해도 되며, 2종 이상을 조합해도 된다.A polymerization inhibitor may be used individually by 1 type, and may combine 2 or more types.
중합 금지제를 함유하는 경우, 중합 금지제의 함유량으로는, 감광성 수지 조성물의 보존 안정성 및 얻어지는 경화물의 내열성의 관점에서, (A) 성분 100 질량부에 대하여, 0.01~30 질량부가 바람직하며, 0.01~10 질량부가 보다 바람직하며, 0.05~5 질량부가 더욱 바람직하다.When it contains a polymerization inhibitor, as content of a polymerization inhibitor, 0.01-30 mass parts is preferable with respect to 100 mass parts of (A) component from a viewpoint of the storage stability of the photosensitive resin composition, and the heat resistance of the hardened|cured material obtained, 0.01 -10 mass parts is more preferable, and 0.05-5 mass parts is still more preferable.
본 발명의 감광성 수지 조성물은, 본질적으로, (A)~(E) 성분, 그리고 임의로 (F) 성분, 커플링제, 계면 활성제, 레벨링제, 방청제 및 중합 금지제로 이루어져 있으며, 본 발명의 효과를 손상시키지 않는 범위에서 다른 불가피 불순물을 포함해도 된다.The photosensitive resin composition of the present invention consists essentially of components (A) to (E), and optionally component (F), a coupling agent, a surfactant, a leveling agent, a rust preventive agent and a polymerization inhibitor, which impairs the effect of the present invention You may include other unavoidable impurities in the range not made.
본 발명의 감광성 수지 조성물의, 예를 들어, 80 질량% 이상, 90 질량% 이상, 95 질량% 이상, 98 질량% 이상 또는 100 질량%가,For example, 80 mass % or more, 90 mass % or more, 95 mass % or more, 98 mass % or more, or 100 mass % of the photosensitive resin composition of this invention,
(A)~(E) 성분,(A) to (E) components,
(A)~(F) 성분, 또는(A) to (F) components, or
(A)~(E) 성분, 그리고 임의로 (F) 성분, 커플링제, 계면 활성제, 레벨링제, 방청제 및 중합 금지제로 이루어져 있어도 된다.You may consist of (A)-(E) component, and (F) component, a coupling agent, surfactant, a leveling agent, a rust preventive agent, and a polymerization inhibitor arbitrarily.
본 발명의 경화물은, 상술한 감광성 수지 조성물을 경화시킴으로써 얻을 수 있다. The hardened|cured material of this invention can be obtained by hardening|curing the above-mentioned photosensitive resin composition.
본 발명의 경화물은, 패턴 경화물로서 사용해도 되며, 패턴이 없는 경화물로서 사용해도 된다. The hardened|cured material of this invention may be used as a pattern hardened|cured material, and may be used as a pattern-free hardened|cured material.
본 발명의 경화물의 막두께는, 5~20 μm가 바람직하다. As for the film thickness of the hardened|cured material of this invention, 5-20 micrometers is preferable.
본 발명의 패턴 경화물의 제조 방법에서는, 상술한 감광성 수지 조성물을 기판 상에 도포, 건조시켜 감광성 수지막을 형성하는 공정과, 감광성 수지막을 패턴노광하여, 수지막을 얻는 공정과, 패턴 노광 후의 수지막을, 유기 용제를 사용하여, 현상하여, 패턴 수지막을 얻는 공정과, 패턴 수지막을 가열 처리하는 공정을 포함한다. In the method for producing a pattern cured product of the present invention, the above-described photosensitive resin composition is applied on a substrate and dried to form a photosensitive resin film, pattern exposure of the photosensitive resin film to obtain a resin film, a resin film after pattern exposure, It develops using an organic solvent, the process of obtaining a pattern resin film, and the process of heat-processing a pattern resin film are included.
이로써, 패턴 경화물을 얻을 수 있다. Thereby, a pattern hardened|cured material can be obtained.
패턴이 없는 경화물을 제조하는 방법은, 예를 들어, 상술한 감광성 수지막을 형성하는 공정과 가열 처리하는 공정을 구비한다. 노광하는 공정을 더 구비해도 된다. The method of manufacturing the hardened|cured material without a pattern is equipped with the process of forming the photosensitive resin film mentioned above, and the process of heat-processing, for example. You may further provide the process of exposing.
기판으로는, 유리 기판, Si 기판(실리콘 웨이퍼) 등의 반도체 기판, TiO2 기판, SiO2 기판 등의 금속 산화물 절연체 기판, 질화규소 기판, 구리 기판, 구리 합금 기판 등을 들 수 있다. Examples of the substrate include semiconductor substrates such as glass substrates and Si substrates (silicon wafers), metal oxide insulator substrates such as TiO 2 substrates and SiO 2 substrates, silicon nitride substrates, copper substrates, and copper alloy substrates.
도포 방법에 특별히 제한은 없지만, 스피너 등을 사용하여 실시할 수 있다. Although there is no restriction|limiting in particular in the application|coating method, A spinner etc. can be used and it can carry out.
건조는, 핫 플레이트, 오븐 등을 사용하여 실시할 수 있다. Drying can be performed using a hot plate, oven, etc.
건조 온도는 90~150℃가 바람직하며, 용해 콘트라스트 확보의 관점에서, 90~120℃가 보다 바람직하다. 90-150 degreeC is preferable and, as for drying temperature, 90-120 degreeC is more preferable from a viewpoint of ensuring melt|dissolution contrast.
건조 시간은, 30초간~5분간이 바람직하다. As for drying time, 30 second - 5 minutes are preferable.
건조는, 2회 이상 실시해도 된다. You may perform drying twice or more.
이로써, 상술한 감광성 수지 조성물을 막상으로 형성한 감광성 수지막을 얻을 수 있다. Thereby, the photosensitive resin film which formed the above-mentioned photosensitive resin composition into the film|membrane can be obtained.
감광성 수지막의 막두께는, 5~100 ㎛가 바람직하며, 6~50 ㎛가 보다 바람직하며, 7~30 ㎛가 더욱 바람직하다. 5-100 micrometers is preferable, as for the film thickness of the photosensitive resin film, 6-50 micrometers is more preferable, 7-30 micrometers is still more preferable.
패턴 노광은, 예를 들어 포토마스크를 개재하여 소정의 패턴으로 노광한다. Pattern exposure exposes in a predetermined pattern through a photomask, for example.
조사하는 활성 광선은, i선, 광대역(BB) 등의 자외선, 가시광선, 방사선 등을 들 수 있지만, i선인 것이 바람직하다. The actinic light to be irradiated includes, but is not limited to, i-rays and ultraviolet rays such as broadband (BB), visible light, and radiation.
노광 장치로는, 평행 노광기, 투영 노광기, 스테퍼, 스캐너 노광기 등을 사용할 수 있다. As an exposure apparatus, a parallel exposure machine, a projection exposure machine, a stepper, a scanner exposure machine, etc. can be used.
현상함으로써, 패턴 형성된 수지막(패턴 수지막)을 얻을 수 있다. 일반적으로, 네거티브형 감광성 수지 조성물을 사용한 경우에는, 미노광부를 현상액으로 제거한다. By developing, a pattern-formed resin film (patterned resin film) can be obtained. Generally, when a negative photosensitive resin composition is used, an unexposed part is removed with a developing solution.
현상액으로서 사용하는 유기 용제는, 현상액으로는, 감광성 수지막의 양용매를 단독으로, 또는 양용매와 빈용매를 적절히 혼합하여 사용할 수 있다. The organic solvent used as a developing solution can be used individually by the good solvent of the photosensitive resin film as a developing solution, or a good solvent and a poor solvent can be mixed and used suitably.
양용매로는, N-메틸-2-피롤리돈, N-아세틸-2-피롤리돈, N,N-디메틸아세트아미드, N,N-디메틸폼아미드, 디메틸설폭사이드, γ-부티로락톤, α-아세틸-γ-부티로락톤, 시클로펜타논, 시클로헥사논 등을 들 수 있다. As good solvents, N-methyl-2-pyrrolidone, N-acetyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, dimethylsulfoxide, γ-butyrolactone , α-acetyl-γ-butyrolactone, cyclopentanone, cyclohexanone, and the like.
빈용매로는, 톨루엔, 자일렌, 메탄올, 에탄올, 이소프로판올, 프로필렌글리콜모노메틸에테르아세테이트, 프로필렌글리콜모노메틸에테르 및 물 등을 들 수 있다. Examples of the poor solvent include toluene, xylene, methanol, ethanol, isopropanol, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and water.
현상액에 계면 활성제를 첨가해도 된다. 첨가량으로는, 현상액 100 질량부에 대하여, 0.01~10 질량부가 바람직하며, 0.1~5 질량부가 보다 바람직하다. You may add surfactant to a developing solution. As an addition amount, 0.01-10 mass parts is preferable with respect to 100 mass parts of developing solutions, and 0.1-5 mass parts is more preferable.
현상 시간은, 예를 들어 감광성 수지막을 침지하여 완전히 용해될 때까지의 시간의 2배로 할 수 있다. The developing time can be doubled as the time until the photosensitive resin film is immersed and completely dissolved, for example.
현상 시간은, 사용하는 (A) 성분에 따라서도 상이하지만, 10초간~15분간이 바람직하며, 10초간~5분간이 보다 바람직하며, 생산성의 관점에서는, 20초간~5분간이 더욱 바람직하다. Although development time changes also with (A) component to be used, 10 second - 15 minutes are preferable, 10 second - 5 minutes are more preferable, From a viewpoint of productivity, 20 second - 5 minutes are still more preferable.
현상 후, 린스액에 의해 세정을 실시해도 된다. After image development, you may wash|clean with a rinse liquid.
린스액으로는, 증류수, 메탄올, 에탄올, 이소프로판올, 톨루엔, 자일렌, 프로필렌글리콜모노메틸에테르아세테이트, 프로필렌글리콜모노메틸에테르 등을 단독 또는 적절히 혼합하여 사용해도 되며, 또한 단계적으로 조합하여 사용해도 된다. As a rinse solution, distilled water, methanol, ethanol, isopropanol, toluene, xylene, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, etc. may be used individually or in mixture as appropriate, or may be used in combination in stages.
패턴 수지막을 가열 처리함으로써, 패턴 경화물을 얻을 수 있다.A pattern hardened|cured material can be obtained by heat-processing a pattern resin film.
(A) 성분의 폴리이미드 전구체가, 가열 처리 공정에 의해, 탈수 폐환 반응을 일으켜, 통상 대응하는 폴리이미드가 된다. (A) The polyimide precursor of component raise|generates a dehydration ring-closure reaction by a heat processing process, and turns into a corresponding polyimide normally.
가열 처리 온도는, 250℃ 이하가 바람직하며, 120~250℃가 보다 바람직하며, 230℃ 이하 또는 180~230℃가 더욱 바람직하다. 250 degreeC or less is preferable, as for heat processing temperature, 120-250 degreeC is more preferable, 230 degreeC or less or 180-230 degreeC is still more preferable.
상기 범위 내임으로써, 기판이나 디바이스에 대한 손상을 작게 억제할 수 있어, 디바이스를 수율 좋게 생산하는 것이 가능하게 되어, 프로세스의 에너지 절약화를 실현할 수 있다. By being in the said range, damage to a board|substrate or a device can be suppressed small, it becomes possible to produce a device with good yield, and energy saving of a process can be implement|achieved.
가열 처리 시간은, 5시간 이하가 바람직하며, 30분간~3시간이 보다 바람직하다. 5 hours or less are preferable and, as for heat processing time, 30 minutes - 3 hours are more preferable.
상기 범위 내임으로써, 가교 반응 또는 탈수 폐환 반응을 충분히 진행할 수 있다. By being within the above range, a crosslinking reaction or a dehydration ring closure reaction can be sufficiently performed.
가열 처리의 분위기는 대기 중이거나, 질소 등의 불활성 분위기 중이어도 되지만, 패턴 수지막의 산화를 방지할 수 있는 관점에서, 질소 분위기하가 바람직하다. The atmosphere of the heat treatment may be in the air or in an inert atmosphere such as nitrogen, but from the viewpoint of preventing oxidation of the pattern resin film, a nitrogen atmosphere is preferable.
가열 처리에 사용되는 장치로는, 석영 튜브로, 핫 플레이트, 래피드 서멀어닐, 종형 확산로, 적외선 경화로, 전자선 경화로, 마이크로파 경화로 등을 들 수 있다. Examples of the apparatus used for the heat treatment include a quartz tube furnace, a hot plate, a rapid thermal annealing, a vertical diffusion furnace, an infrared curing furnace, an electron beam curing furnace, and a microwave curing furnace.
본 발명의 경화물은, 패시베이션막, 버퍼 코트막, 층간 절연막, 커버 코트층 또는 표면 보호막 등으로서 사용할 수 있다. The cured product of the present invention can be used as a passivation film, a buffer coat film, an interlayer insulating film, a cover coat layer, a surface protective film, or the like.
상기 패시베이션막, 버퍼 코트막, 층간 절연막, 커버 코트층 및 표면 보호막 등으로 이루어지는 군에서 선택되는 1 이상을 사용하여, 신뢰성이 높은, 반도체 장치, 다층 배선판, 각종 전자 디바이스, 적층 디바이스(멀티다이 팬아웃 웨이퍼 레벨 패키지 등) 등의 전자 부품 등을 제조할 수 있다. High reliability semiconductor devices, multilayer wiring boards, various electronic devices, and laminated devices (multi-die pans) using at least one selected from the group consisting of the passivation film, buffer coating film, interlayer insulating film, cover coating layer, and surface protective film. electronic components such as out-wafer level packages) can be manufactured.
본 발명의 전자 부품인 반도체 장치의 제조 공정의 일례를, 도면을 참조하여 설명한다. An example of the manufacturing process of the semiconductor device which is an electronic component of this invention is demonstrated with reference to drawings.
도 1은, 본 발명의 일 실시형태에 관련되는 전자 부품인 다층 배선 구조의 반도체 장치의 제조 공정도이다. BRIEF DESCRIPTION OF THE DRAWINGS It is a manufacturing process diagram of the semiconductor device of the multilayer wiring structure which is an electronic component which concerns on one Embodiment of this invention.
도 1에 있어서, 회로 소자를 갖는 Si 기판 등의 반도체 기판(1)은, 회로 소자의 소정 부분을 제외하고 실리콘 산화막 등의 보호막(2) 등으로 피복되어, 노출된 회로 소자 상에 제1 도체층(3)이 형성된다. 그 후, 상기 반도체 기판(1) 상에 층간 절연막(4)가 형성된다. In Fig. 1, a
다음으로, 염화고무계, 페놀노볼락계 등의 감광성 수지층(5)가, 층간 절연막(4) 상에 형성되고, 공지의 사진 식각 기술에 의해 소정 부분의 층간 절연막(4)가 노출되도록 창(6A)가 형성된다. Next, a photosensitive resin layer 5 such as chlorinated rubber or phenol novolac is formed on the
창(6A)가 노출된 층간 절연막(4)는, 선택적으로 에칭되어, 창(6B)가 형성된다. The
이어서, 창(6B)로부터 노출된 제1 도체층(3)을 부식하지 않고, 감광성 수지층(5)만을 부식하도록 하는 에칭 용액을 사용하여 감광성 수지층(5)가 완전히 제거된다. Then, the photosensitive resin layer 5 is completely removed using an etching solution that corrodes only the photosensitive resin layer 5 without corroding the
공지의 사진 식각 기술을 이용하여, 제2 도체층(7)을 더 형성하고, 제1 도체층(3)과의 전기적 접속을 실시한다. A
3층 이상의 다층 배선 구조를 형성하는 경우에는, 상술한 공정을 반복해서 실시하여, 각 층을 형성할 수 있다. When forming a multilayer wiring structure of three or more layers, each layer can be formed by repeating the above-described process.
다음으로, 상술한 감광성 수지 조성물을 사용하여, 패턴 노광에 의해 창(6C)를 개구하여, 표면 보호막(8)을 형성한다. 표면 보호막(8)은, 제2 도체층(7)을 외부로부터의 응력, α선 등으로부터 보호하는 것이며, 얻어지는 반도체 장치는 신뢰성이 우수하다. Next, using the above-mentioned photosensitive resin composition, the
또한, 상기 예에 있어서, 층간 절연막을 본 발명의 감광성 수지 조성물을 사용하여 형성하는 것도 가능하다. Moreover, in the said example, it is also possible to form an interlayer insulating film using the photosensitive resin composition of this invention.
실시예Example
이하, 실시예 및 비교예에 기초하여, 본 발명에 대하여 더 구체적으로 설명한다. 또한, 본 발명은 하기 실시예에 한정되는 것은 아니다. Hereinafter, the present invention will be described in more detail based on Examples and Comparative Examples. In addition, the present invention is not limited to the following examples.
합성예 1(A1의 합성)Synthesis Example 1 (Synthesis of A1)
3,3',4,4'-디페닐에테르테트라카복실산 2무수물(ODPA) 7.07g과 2,2'-디메틸비페닐-4,4'-디아민(DMAP) 4.12g을 N-메틸-2-피롤리돈(NMP) 30g으로 용해하고, 30℃에서 4시간, 그 후 실온하에서 하룻밤 교반하여, 폴리아미드산을 얻었다. 거기에 수냉하에서 무수 트리플루오로아세트산을 9.45g 첨가하고, 45℃에서 3시간 교반하여, 메타크릴산2-하이드록시에틸(HEMA) 7.08g을 첨가하였다. 이 반응액을 증류수에 적하하고, 침전물을 여과 분리하여 모으고, 감압 건조시킴으로써 폴리이미드 전구체 A1을 얻었다.3,3',4,4'-diphenylethertetracarboxylic dianhydride (ODPA) 7.07g and 2,2'-dimethylbiphenyl-4,4'-diamine (DMAP) 4.12g N-methyl-2- It melt|dissolved in 30 g of pyrrolidone (NMP), and it stirred at 30 degreeC for 4 hours, then at room temperature overnight, and obtained polyamic acid. Under water cooling, 9.45 g of trifluoroacetic anhydride was added thereto, followed by stirring at 45°C for 3 hours, and 7.08 g of 2-hydroxyethyl methacrylate (HEMA) was added thereto. Polyimide precursor A1 was obtained by dripping this reaction liquid to distilled water, filtration-separating a deposit, and drying it under reduced pressure.
겔퍼미에이션 크로마토그래프(GPC)법을 이용하여, 표준 폴리스티렌 환산에 의해, 이하의 조건으로, 수평균 분자량을 구하였다. A1의 수평균 분자량은 40,000이었다.The number average molecular weight was calculated|required on the following conditions by standard polystyrene conversion using the gel permeation chromatography (GPC) method. The number average molecular weight of A1 was 40,000.
0.5 mg의 A1에 대하여 용제[테트라하이드로푸란(THF)/디메틸폼아미드(DMF)=1/1(용적비)] 1 mL의 용액을 사용하여 측정하였다. It was measured using a solution of 1 mL of a solvent [tetrahydrofuran (THF)/dimethylformamide (DMF) = 1/1 (volume ratio)] with respect to 0.5 mg of A1.
측정 장치 : 검출기 주식회사 히타치 제작소 제 L4000UVMeasuring device: Detector L4000UV made by Hitachi, Ltd.
펌프 : 주식회사 히타치 제작소 제 L6000Pump: L6000 made by Hitachi Seisakusho Co., Ltd.
주식회사 시마즈 제작소 제 C-R4A ChromatopacC-R4A Chromatopac manufactured by Shimadzu Corporation
측정 조건: 컬럼 Gelpack GL-S300MDT-5×2개Measurement conditions: Column Gelpack GL-S300MDT-5×2
용리액: THF/DMF=1/1(용적비)Eluent: THF/DMF=1/1 (volume ratio)
LiBr(0.03 mol/L), H3PO4(0.06 mol/L)LiBr (0.03 mol/L), H 3 PO 4 (0.06 mol/L)
유속: 1.0 mL/min, 검출기: UV 270 nmFlow rate: 1.0 mL/min, Detector: UV 270 nm
또한, A1의 에스테르화율(ODPA의 카복시기의 HEMA와의 반응률)을, 이하의 조건으로 NMR 측정을 실시하여, 산출하였다. 에스테르화율은, 폴리아미드산의 전(全)카복시기에 대하여 80 몰%였다(나머지 20 몰%는 카복시기). In addition, the esterification rate (reaction rate of the carboxy group of ODPA with HEMA) of A1 was computed by performing NMR measurement on the following conditions. The esterification rate was 80 mol% with respect to all the carboxy groups of polyamic acid (the remaining 20 mol% is a carboxy group).
측정 기기 : 브루커 바이오 스핀사 제 AV400MMeasuring device: AV400M made by Bruker Biospin
자장 강도: 400 MHzMagnetic field strength: 400 MHz
기준 물질: 테트라메틸실란(TMS)Reference material: tetramethylsilane (TMS)
용매: 디메틸설폭사이드(DMSO)Solvent: dimethyl sulfoxide (DMSO)
실시예 1~3 및 비교예 1~5Examples 1-3 and Comparative Examples 1-5
(감광성 수지 조성물의 조제)(Preparation of photosensitive resin composition)
표 1에 나타낸 성분 및 배합량으로, 실시예 1~3 및 비교예 1~5의 감광성 수지 조성물을 조제하였다. 표 1의 배합량은, 100 질량부의 A1에 대한, 각 성분의 질량부이다.With the component and compounding quantity shown in Table 1, the photosensitive resin composition of Examples 1-3 and Comparative Examples 1-5 was prepared. The compounding quantity of Table 1 is a mass part of each component with respect to 100 mass parts of A1.
사용한 각 성분은 이하와 같다. (A) 성분으로서, 합성예 1에서 얻어진 A1을 사용하였다.Each component used is as follows. (A) As the component, A1 obtained in Synthesis Example 1 was used.
(B) 성분 : 중합성 모노머(B) component: polymerizable monomer
B1: A-DCP(신나카무라 화학공업 주식회사 제, 트리시클로데칸디메탄올디아크릴레이트, 하기 식 B1로 나타내는 화합물)B1: A-DCP (manufactured by Shin-Nakamura Chemical Industry Co., Ltd., tricyclodecane dimethanol diacrylate, a compound represented by the following formula B1)
B2: ATM-4E(신나카무라 화학공업 주식회사 제, 에톡시화 펜타에리트리톨테트라아크릴레이트, 하기 식으로 나타내는 화합물(n11+n12+n13+n14는 4이다)B2: ATM-4E (manufactured by Shin-Nakamura Chemical Industry Co., Ltd., ethoxylated pentaerythritol tetraacrylate, a compound represented by the following formula (n11+n12+n13+n14 is 4)
B3: FA-324A(히타치카세이 주식회사 제, EO 변성 비스페놀 A 디아크릴레이트, 하기 식 B3으로 나타내는 화합물)B3: FA-324A (manufactured by Hitachi Kasei Co., Ltd., EO-modified bisphenol A diacrylate, a compound represented by the following formula B3)
(C) 성분: 광중합 개시제(C) component: photoinitiator
C1: IRUGCURE OXE 02(BASF 재팬 주식회사 제, 에타논, 1-[9-에틸-6-(2-메틸벤조일)-9H-카바졸-3-일]-, 1-(O-아세틸옥심))C1: IRUGCURE OXE 02 (BASF Japan Co., Ltd., ethanone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-, 1-(O-acetyloxime))
C2: G-1820(PDO) (Lambson 주식회사 제, 1-페닐-1,2-프로판디온-2-(O-에톡시카보닐)옥심)C2: G-1820 (PDO) (Lambson Co., Ltd., 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl) oxime)
(D) 성분: 환화 촉매(D) Component: Cyclization Catalyst
D1: 2HE(모린 화학공업 주식회사 제, N-페닐디에탄올아민)D1: 2HE (manufactured by Morin Chemical Industries, Ltd., N-phenyldiethanolamine)
(D') 성분(D') component
D2: U-CAT SA810(산아프로 주식회사 제, 하기 식 D2로 나타내는 화합물)D2: U-CAT SA810 (San Apro Co., Ltd., compound represented by the following formula D2)
D3: U-CAT SA1(산아프로 주식회사 제, 하기 식 D3으로 나타내는 화합물)D3: U-CAT SA1 (San Apro Co., Ltd., compound represented by the following formula D3)
D4: 4-하이드록시피리딘D4: 4-hydroxypyridine
(E) 성분: 용제(E) Component: Solvent
E1: KJCMPA-100(KJ 케미컬즈 주식회사 제, 하기 식 E1로 나타내는 화합물)E1: KJCMPA-100 (manufactured by KJ Chemicals, a compound represented by the following formula E1)
(F) 성분 : 열중합 개시제(F) component: thermal polymerization initiator
F1: 퍼쿠밀 D(니치유 주식회사 제, 비스(1-페닐-1-메틸에틸)퍼옥시드, 하기 식 F1로 나타내는 화합물)F1: Percumyl D (manufactured by Nichiyu Corporation, bis(1-phenyl-1-methylethyl)peroxide, a compound represented by the following formula F1)
(감도의 평가)(Evaluation of sensitivity)
얻어진 감광성 수지 조성물을, 도포 장치 Act8(도쿄 일렉트론 주식회사 제)을 사용하여, 실리콘 웨이퍼 상에 스핀 코트하고, 105℃에서 120초간 건조 후, 115℃에서 120초간 건조시켜 건조 막두께가 13 μm인 감광성 수지막을 형성하였다.The obtained photosensitive resin composition was spin-coated on a silicon wafer using an application device Act8 (manufactured by Tokyo Electron Corporation), dried at 105°C for 120 seconds, dried at 115°C for 120 seconds, and a dry film thickness of 13 µm. A resin film was formed.
얻어진 감광성 수지막을 시클로펜타논에 침지하여 완전히 용해될 때까지의 시간의 2배를 현상 시간으로서 설정하였다.Twice the time until the obtained photosensitive resin film was immersed in cyclopentanone and melt|dissolved completely was set as developing time.
또한, 상기와 동일하게 감광성 수지막을 제작하고, 얻어진 감광성 수지막에, i선 스테퍼 FPA-3000iW(캐논 주식회사 제)를 사용하여, 100~1100 mJ/㎠의 i선을, 100 mJ/㎠씩의 조사량으로, 소정 패턴으로 조사하여, 노광을 실시하였다.Further, a photosensitive resin film was produced in the same manner as above, and to the obtained photosensitive resin film, using an i-line stepper FPA-3000iW (manufactured by Canon Corporation), i-line of 100 to 1100 mJ/
노광 후의 수지막을, Act8을 사용하여, 시클로펜타논에, 상기 현상 시간으로 현상한 후, 프로필렌글리콜모노메틸에테르아세테이트(PGMEA)로 린스 세정을 실시하여, 패턴 수지막을 얻었다.After developing the resin film after exposure using Act8 in cyclopentanone for the said developing time, propylene glycol monomethyl ether acetate (PGMEA) rinse-cleaned and the pattern resin film was obtained.
얻어진 패턴 수지막의 막두께가, 노광 전의 감광성 수지막의 막두께의 80% 이상이 되는 노광량의 하한을 감도로 하였다. 결과를 표 1에 나타낸다.The lower limit of the exposure amount used as 80% or more of the film thickness of the photosensitive resin film before exposure was made into sensitivity as the film thickness of the obtained pattern resin film. A result is shown in Table 1.
(패턴 경화물의 제조 1)(Manufacture of pattern cured product 1)
감도의 평가에서 얻어진 패턴 수지막을, 종형 확산로 μ-TF(코요 서모 시스템 주식회사 제)를 사용하여, 질소 분위기하, 200℃에서 2시간 가열하여, 패턴 경화물(경화 후 막두께 10 μm)이 얻어졌다.The pattern resin film obtained in the sensitivity evaluation was heated for 2 hours at 200°C in a nitrogen atmosphere using µ-TF (manufactured by Koyo Thermosystems Co., Ltd.) in a vertical diffusion furnace, and the pattern cured product (film thickness after curing 10 µm) was was obtained
(패턴 경화물의 제조 2)(Manufacture of pattern cured product 2)
감도의 평가에서 얻어진 패턴 수지막을, 종형 확산로 μ-TF를 사용하여, 질소 분위기하, 400℃에서 1시간 가열하여, 패턴 경화물이 얻어졌다.The patterned resin film obtained by evaluation of sensitivity was heated at 400 degreeC in nitrogen atmosphere using micro-TF in a vertical diffusion furnace for 1 hour, and the pattern hardened|cured material was obtained.
(환화율의 평가)(Evaluation of exchange rate)
감도의 평가에서 얻어진 패턴 수지막에 대하여, FT-IR IRAffinity-1S(주식회사 시마즈 제작소 제)를 사용하여, 이하의 조건으로 IR(적외 분광 분석) 스펙트럼을 측정하였다. 이 값을 IR1로 한다.About the pattern resin film obtained by evaluation of sensitivity, IR (infrared spectroscopy) spectrum was measured on condition of the following using FT-IR IRAffinity-1S (made by Shimadzu Corporation). Let this value be IR1.
IR 스펙트럼의 측정 조건은, 투과법으로, 측정 범위 400~4000 cm-1, 적산 횟수 16회로 실시하였다.The measurement conditions of the IR spectrum were performed by a transmission method in a measurement range of 400 to 4000 cm -1 , and the number of times of integration 16 times.
IR 스펙트럼의 측정은, 기판으로서 실리콘 웨이퍼를 사용하였다. 우선, 감광성 수지 조성물을 도포하지 않은 기판에 대해서, 측정하여, 백그라운드로 하였다. 다음으로, 패턴 수지막의 수지막 부분에 대해서, 상기 백그라운드를 사용하여, 측정을 실시하여, IR 스펙트럼을 얻었다.For the measurement of the IR spectrum, a silicon wafer was used as the substrate. First, about the board|substrate to which the photosensitive resin composition was not apply|coated, it measured and set it as the background. Next, about the resin film part of the pattern resin film, it measured using the said background, and obtained the IR spectrum.
또한, 패턴 경화물의 제조 1에서 얻어진 패턴 경화물에 대하여, 상기와 동일하게 IR을 측정하였다. 이 값을 IR2로 한다.Moreover, IR was measured similarly to the above about the pattern hardened|cured material obtained by
패턴 경화물의 제조 2에서 얻어진 패턴 경화물에 대하여, 상기와 동일하게 IR을 측정하였다. 이 값을 IR3으로 한다.About the pattern hardened|cured material obtained by
IR2에서 IR1을 뺀 값을, IR3에서 IR1을 뺀 값으로 나누어, 백분율로 함으로써, 환화율을 구하였다. 65% 이상을 A로 하고, 65% 미만을 B로 하였다. 결과를 표 1에 나타낸다.The conversion rate was calculated|required by dividing the value which subtracted IR1 from IR2 by the value which subtracted IR3 from IR1, and set it as a percentage. 65% or more was made into A, and less than 65% was made into B. A result is shown in Table 1.
(보존 안정성의 평가)(Evaluation of storage stability)
상술한 감광성 수지 조성물에 대하여, 조정 후 24시간 이내로, Si 기판 상에, 건조 후 막두께가 13 μm가 되는 회전수로 스핀 코트하고, 핫 플레이트 상에서, 105℃에서 120초간, 115℃에서 120초간 가열 건조시켜, 감광성 수지막을 형성하였다. 막의 일부분을 문지름으로써 실리콘 웨이퍼를 노출시키고, 노출된 실리콘 웨이퍼 표면으로부터 막 표면까지의 높이를, 접침식 프로파일러 Dektak150(브루커사 제)을 사용하여, 측정하였다(막두께의 측정은, 상기에 있어서 동일하며, 이하에 있어서도 동일하다). 이것을 막두께(1)로 한다.About the above-mentioned photosensitive resin composition, within 24 hours after adjustment, it spin-coated on the Si substrate at the rotation speed which becomes the film thickness after drying 13 micrometers, and on a hotplate, 105 degreeC for 120 second, 115 degreeC for 120 second. It was heat-dried and the photosensitive resin film was formed. The silicon wafer was exposed by rubbing a part of the film, and the height from the exposed silicon wafer surface to the film surface was measured using a folding profiler Dektak150 (manufactured by Bruker) (the measurement of the film thickness was the same, and also the same below). Let this be the film thickness (1).
상술한 감광성 수지 조성물을, 조정 후, 실온(25℃)에서, 14일간 정치(靜置)하였다. 정치 후, Si 기판 상에, 막두께(1) 측정용의 감광성 수지막을 형성했을 때와 동일한 회전수로 스핀 코트하고, 핫 플레이트 상에서, 105℃에서 120초간, 115℃에서 120초간 가열 건조시켜, 감광성 수지막을 형성하였다. 상기와 동일하게, 막두께를 측정하였다. 이것을 막두께(2)로 한다.The photosensitive resin composition mentioned above was left still at room temperature (25 degreeC) after adjustment for 14 days. After standing still, spin-coated at the same rotation speed as when the photosensitive resin film for film thickness (1) measurement was formed on the Si substrate, and dried by heating on a hot plate at 105°C for 120 seconds and 115°C for 120 seconds, A photosensitive resin film was formed. In the same manner as above, the film thickness was measured. Let this be the film thickness (2).
막두께(2)에서 막두께(1)을 뺀 절대치를, 막두께(1)로 나누어, 백분율로 한 값이, 5% 이하인 경우를 A로 하였다. 5%를 초과하는 경우를 B로 하였다. 결과를 표 1에 나타낸다.A case where the absolute value obtained by subtracting the film thickness (1) from the film thickness (2) was divided by the film thickness (1) to be 5% or less was defined as A. A case exceeding 5% was designated as B. A result is shown in Table 1.
(패턴 경화물의 제조 3)(Manufacture of pattern cured product 3)
상술한 감광성 수지 조성물을, Si 기판 상에 스핀 코트하고, 핫 플레이트 상에서, 105℃에서 120초간, 115℃에서 120초간 가열 건조시켜, 12.0~13.0 μm의 감광성 수지막을 형성하였다.The above-mentioned photosensitive resin composition was spin-coated on a Si substrate, and it heat-dried at 105 degreeC for 120 second and 115 degreeC for 120 second on a hotplate, and formed the photosensitive resin film of 12.0-13.0 micrometers.
얻어진 감광성 수지막을, 마스크 얼라이너 MA-8(주스·마이크로테크사 제)을 사용하여, 광대역(BB) 노광하고, 노광 후의 수지막을, 시클로펜타논으로 현상하여, 10 mm 폭의 직사각형상의 패턴 수지막을 얻었다.The obtained photosensitive resin film was subjected to broadband (BB) exposure using a mask aligner MA-8 (manufactured by Juice Microtech), the resin film after exposure was developed with cyclopentanone, and a rectangular patterned resin having a width of 10 mm got a stop
얻어진 패턴 수지막을, 종형 확산로 μ-TF를 사용하여, 질소 분위기하, 200℃에서 2시간, 경화시켜, 막두께 10 μm인 패턴 경화물을 얻었다.The obtained patterned resin film was hardened for 2 hours at 200 degreeC in nitrogen atmosphere using micro-TF in a vertical diffusion furnace, and the pattern hardened|cured material with a film thickness of 10 micrometers was obtained.
(신장률의 평가)(Evaluation of elongation)
패턴 경화물의 제조 3에서 얻어진 패턴 경화물을, 4.9 질량% 불산 수용액에 침지하여, 10 mm 폭의 경화물을 웨이퍼로부터 박리하였다.The pattern cured product obtained in
박리된 10 mm 폭의 경화물에 대해서, 오토그래프 AGS-X 100N(주식회사 시마즈 제작소 제)을 사용하여, 인장 시험을 실시하였다. 척간 거리 20 mm, 인장 속도 5 mm/분, 측정 온도를 18~25℃로 하고, 각 실시예 및 비교예의 경화물마다, 3회 측정하여, 신장률의 평균치를 구하였다.A tensile test was performed on the peeled-off cured product having a width of 10 mm using Autograph AGS-X 100N (manufactured by Shimadzu Corporation). The distance between chucks was 20 mm, the tensile rate was 5 mm/min, the measurement temperature was 18 to 25°C, and each cured product of each Example and Comparative Example was measured three times to obtain the average value of the elongation.
신장률의 평균치가, 50% 초과인 경우 A로 하고, 45% 초과 50% 이하인 경우 B로 하고, 45% 이하인 경우 C로 하였다. PCT(프레셔 쿠커 시험) 전의 결과로서, 표 1에 나타낸다.When the average value of elongation was more than 50%, it was set as A, when it was more than 45% and 50% or less, it was set as B, and when it was 45% or less, it was set as C. As a result before PCT (pressure cooker test), it shows in Table 1.
또한, 상술한 패턴 경화물의 제조 3에서 얻어진 패턴 경화물을, PCT 시험 장치 HASTEST(주식회사 히라야마 제작소 제, PC-R8D)를 사용하여, 121℃, 100RH(Relative Humidity)%, 2 atm으로 100시간 처리하였다.Moreover, the pattern hardened|cured material obtained in
PCT 시험 장치에서 패턴 경화물을 꺼내어, 패턴 경화물을, 상기와 동일하게 박리하고, 인장 시험을 실시하여, 신장률의 평균치를 구하였다.The pattern hardened|cured material was taken out from the PCT test apparatus, the pattern hardened|cured material was peeled similarly to the above, the tensile test was done, and the average value of elongation was calculated|required.
신장률의 평균치가, 50% 초과인 경우 A로 하고, 45% 초과 50% 이하인 경우 B로 하고, 45% 이하인 경우 C로 하였다. PCT 후의 결과로서, 표 1에 나타낸다. "-"는 측정하지 않은 것을 나타낸다.When the average value of elongation was more than 50%, it was set as A, when it was more than 45% and 50% or less, it was set as B, and when it was 45% or less, it was set as C. Table 1 shows the results after PCT. "-" indicates no measurement.
산업상 이용 가능성Industrial Applicability
본 발명의 감광성 수지 조성물은, 층간 절연막, 커버 코트층 또는 표면 보호막 등에 사용할 수 있으며, 본 발명의 층간 절연막, 커버 코트층 또는 표면 보호막은, 전자 부품 등에 사용할 수 있다.The photosensitive resin composition of the present invention can be used for an interlayer insulating film, a cover coat layer, or a surface protective film, etc., and the interlayer insulating film, a cover coat layer or a surface protective film of the present invention can be used for an electronic component or the like.
상기에 본 발명의 실시형태 및/또는 실시예를 몇 가지 상세하게 설명하였지만, 당업자는, 본 발명의 신규 교시 및 효과로부터 실질적으로 벗어나지 않고, 이들 예시인 실시형태 및/또는 실시예에 많은 변경을 가하는 것이 용이하다. 따라서, 이들 많은 변경은 본 발명의 범위에 포함된다.Although the embodiments and/or examples of the present invention have been described in some detail above, those skilled in the art can make many changes to these illustrative embodiments and/or examples without substantially departing from the novel teachings and effects of the present invention. easy to apply Accordingly, many of these modifications are included within the scope of the present invention.
이 명세서에 기재된 문헌, 및 본원의 파리 조약에 의한 우선권의 기초가 되는 출원 내용을 모두 원용한다.All of the documents described in this specification and the application content underlying the priority of the Paris Convention of the present application are incorporated herein by reference.
Claims (19)
(B) 중합성 모노머,
(C) 광중합 개시제,
(D) 환화(環化) 촉매, 및
(E) 용제를 함유하는 감광성 수지 조성물.(A) a polyimide precursor having a polymerizable unsaturated bond;
(B) a polymerizable monomer;
(C) a photoinitiator;
(D) a cyclization catalyst, and
(E) The photosensitive resin composition containing a solvent.
상기 (A) 성분이, 하기 식 (1)로 나타내는 구조 단위를 갖는 폴리이미드 전구체인 감광성 수지 조성물.
(식 (1) 중, X1은 1 이상의 방향족기를 갖는 4가의 기로서, -COOR1기와 -CONH-기는 서로 오르토 위치에 있으며, -COOR2기와 -CO-기는 서로 오르토 위치에 있다. Y1은 2가의 방향족기이다. R1 및 R2는, 각각 독립적으로, 수소 원자, 하기 식 (2)로 나타내는 기, 또는 탄소수 1~4의 지방족 탄화수소기이며, R1 및 R2 중 적어도 한 쪽이 상기 식 (2)로 나타내는 기이다.)
(식 (2) 중, R3~R5는, 각각 독립적으로, 수소 원자 또는 탄소수 1~3의 지방족 탄화수소기이며, m은 1~10의 정수이다.)The method of claim 1,
The photosensitive resin composition whose said (A) component is a polyimide precursor which has a structural unit represented by following formula (1).
(In formula (1), X 1 is a tetravalent group having one or more aromatic groups, -COOR 1 group and -CONH- group are ortho-positioned to each other, -COOR 2 group and -CO- group are mutually ortho-positioned. Y 1 is a divalent aromatic group, R 1 and R 2 are each independently a hydrogen atom, a group represented by the following formula (2), or an aliphatic hydrocarbon group having 1 to 4 carbon atoms, and at least one of R 1 and R 2 This is group represented by said Formula (2).)
(In formula (2), R 3 to R 5 are each independently a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and m is an integer of 1 to 10.)
상기 (D) 성분이, N-페닐디에탄올아민, N-메틸아닐린, N-에틸아닐린, N,N-디메틸아닐린, N-페닐에탄올아민, 4-페닐모르폴린 및 2,2'-(4-메틸페닐이미노)디에탄올로 이루어지는 군에서 선택되는 1 이상인 감광성 수지 조성물.3. The method according to claim 1 or 2,
The component (D) is N-phenyldiethanolamine, N-methylaniline, N-ethylaniline, N,N-dimethylaniline, N-phenylethanolamine, 4-phenylmorpholine and 2,2'-(4 -Methylphenylimino) at least one photosensitive resin composition selected from the group consisting of diethanol.
상기 (D) 성분이, 하기 식 (17)로 나타내는 화합물을 포함하는 감광성 수지 조성물.
(식 (17) 중, R31A~R33A는, 각각 독립적으로, 수소 원자, 1가의 지방족 탄화수소기, 하이드록시기를 갖는 1가의 지방족 탄화수소기, 또는 1가의 방향족기이며, R31A~R33A 중 적어도 1개가 1가의 방향족기이다. R31A~R33A는 인접하는 기끼리 환(環)을 형성해도 된다.)3. The method according to claim 1 or 2,
The photosensitive resin composition in which the said (D)component contains the compound represented by following formula (17).
(In formula (17), R 31A to R 33A are each independently a hydrogen atom, a monovalent aliphatic hydrocarbon group, a monovalent aliphatic hydrocarbon group having a hydroxyl group, or a monovalent aromatic group, and among R 31A to R 33A At least one is a monovalent aromatic group. R 31A to R 33A may form a ring between adjacent groups.)
상기 (C) 성분이 (C1) 하기 식 (15)로 나타내는 화합물 및 (C2) 하기 식 (16)으로 나타내는 화합물을 포함하는 감광성 수지 조성물.
(식 (15) 중, R11A는 탄소수 1~12의 알킬기이며, a1은 0~5의 정수이다. R12A는 수소 원자 또는 탄소수 1~12의 알킬기이다. R13A 및 R14A는, 각각 독립적으로 수소 원자, 탄소수 1~12의 알킬기, 페닐기 또는 톨릴기를 나타낸다. a1이 2 이상의 정수인 경우, R11A는 각각 동일해도 되며, 상이해도 된다.)
(식 (16) 중, R21A는 탄소수 1~12의 알킬기이며, R22A 및 R23A는, 각각 독립적으로 수소 원자, 탄소수 1~12의 알킬기, 탄소수 1~12의 알콕시기, 탄소수 4~10의 시클로알킬기, 페닐기 또는 톨릴기이며, c1은 0~5의 정수이다. c1이 2 이상의 정수인 경우, R21A는 각각 동일해도 되며, 상이해도 된다.)5. The method according to any one of claims 1 to 4,
The photosensitive resin composition in which the said (C)component contains the compound represented by (C1) following formula (15), and (C2) the compound represented by following formula (16).
(In formula (15), R 11A is an alkyl group having 1 to 12 carbon atoms, and a1 is an integer of 0 to 5. R 12A is a hydrogen atom or an alkyl group having 1 to 12 carbon atoms. R 13A and R 14A are each independently represents a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, a phenyl group or a tolyl group. When a1 is an integer of 2 or more, R 11A may be the same or different.)
(In formula (16), R 21A is an alkyl group having 1 to 12 carbon atoms, R 22A and R 23A are each independently a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, and 4 to 10 carbon atoms of a cycloalkyl group, a phenyl group, or a tolyl group, and c1 is an integer of 0 to 5. When c1 is an integer of 2 or more, R 21A may be the same or different, respectively.)
상기 (B) 성분이, 지방족 환상(環狀) 골격을 갖는 중합성 모노머를 포함하는 감광성 수지 조성물.6. The method according to any one of claims 1 to 5,
The photosensitive resin composition in which the said (B) component contains the polymerizable monomer which has aliphatic cyclic skeleton.
상기 (B) 성분이, 중합성의 불포화 이중 결합을 포함하는 기를 갖는 감광성 수지 조성물.7. The method according to any one of claims 1 to 6,
The photosensitive resin composition in which the said (B) component has group containing a polymerizable unsaturated double bond.
상기 (B) 성분이, 2 이상의 중합성의 불포화 이중 결합을 포함하는 기를 갖는 중합성 모노머인 감광성 수지 조성물.8. The method of claim 7,
The photosensitive resin composition whose said (B) component is a polymerizable monomer which has group containing two or more polymerizable unsaturated double bonds.
상기 (B) 성분이, 하기 식 (3)으로 나타내는 중합성 모노머를 포함하는 감광성 수지 조성물.
(식 (3) 중, R6 및 R7은, 각각 독립적으로, 탄소수 1~4의 지방족 탄화수소기 또는 하기 식 (4)로 나타내는 기이다. n1은 0 또는 1이며, n2는 0~2의 정수이며, n1+n2는 1 이상이다. n1개의 R6 및 n2개의 R7 중 적어도 1개는, 하기 식 (4)로 나타내는 기이다.)
(식 (4) 중, R9~R11은, 각각 독립적으로, 수소 원자 또는 탄소수 1~3의 지방족 탄화수소기이며, l은 0~10의 정수이다.)8. The method according to any one of claims 1 to 7,
The photosensitive resin composition in which the said (B) component contains the polymerizable monomer represented by following formula (3).
(In formula (3), R 6 and R 7 are each independently an aliphatic hydrocarbon group having 1 to 4 carbon atoms or a group represented by the following formula (4). n1 is 0 or 1, and n2 is 0 to 2 It is an integer, and n1+n2 is equal to or greater than 1. At least one of n1 pieces of R 6 and n2 pieces of R 7 is a group represented by the following formula (4).)
(In formula (4), R 9 to R 11 are each independently a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and l is an integer of 0 to 10.)
n1+n2가, 2 또는 3인 감광성 수지 조성물.10. The method of claim 9,
The photosensitive resin composition whose n1+n2 is 2 or 3.
상기 (B) 성분이, 하기 식 (5)로 나타내는 중합성 모노머를 포함하는 감광성 수지 조성물.
11. The method according to any one of claims 1 to 10,
The photosensitive resin composition in which the said (B) component contains the polymerizable monomer represented by following formula (5).
(F) 열중합 개시제를 더 포함하는 감광성 수지 조성물.12. The method according to any one of claims 1 to 11,
(F) The photosensitive resin composition further comprising a thermal polymerization initiator.
산화 방지제를 더 포함하는 감광성 수지 조성물.13. The method according to any one of claims 1 to 12,
The photosensitive resin composition further containing antioxidant.
상기 감광성 수지막을 패턴 노광하여, 수지막을 얻는 공정과,
상기 패턴 노광 후의 수지막을, 유기 용제를 사용하여, 현상하여, 패턴 수지막을 얻는 공정과,
상기 패턴 수지막을 가열 처리하는 공정을 포함하는 패턴 경화물의 제조 방법. The process of apply|coating and drying the photosensitive resin composition in any one of Claims 1-13 on a board|substrate to form a photosensitive resin film;
a step of pattern exposing the photosensitive resin film to obtain a resin film;
A step of developing the resin film after the pattern exposure using an organic solvent to obtain a pattern resin film;
The manufacturing method of the pattern hardened|cured material including the process of heat-processing the said pattern resin film.
상기 가열 처리 온도가 230℃ 이하인 패턴 경화물의 제조 방법.15. The method of claim 14,
The manufacturing method of the pattern hardened|cured material whose said heat processing temperature is 230 degrees C or less.
패턴 경화물인 경화물.17. The method of claim 16,
A cured product that is a pattern cured product.
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JP2009265520A (en) | 2008-04-28 | 2009-11-12 | Hitachi Chemical Dupont Microsystems Ltd | Photosensitive resin composition, and polybenzoxazole film, method for producing patterned cured film and electronic component using resin composition |
JP2016199662A (en) | 2015-04-09 | 2016-12-01 | 日立化成デュポンマイクロシステムズ株式会社 | Resin composition comprising polyimide precursor, method for producing cured film and patterned cured film using the same, and electronic component |
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