KR20210056046A - Semiconductor manufacturing apparatus equipped with backflow preventing function of ozone water - Google Patents

Abstract

A semiconductor manufacturing device with an ozone water backflow prevention function according to the present invention comprises: a reaction vessel which is installed inside a chamber and in which a wafer placed on a spin chuck is located; an initial ozone water discharge line which is installed to extend from the inner space of the chamber outside the reaction vessel to the outside of the chamber and provides a discharge path for initial ozone water sprayed by a dispenser; a cleaning ozone water discharge line which provides a path through which cleaning ozone water sprayed onto the wafer and subjected to a cleaning process is discharged from the reaction vessel to the outside; a common line which is connected to the end of the initial ozone water discharge line and the end of the cleaning ozone water discharge line; a drain line which is connected to the common line and provides a discharge path of the initial ozone water flowing in through the initial ozone water discharge line and the common line; and a vent line which is connected to the common line and the drain line and prevents the cleaning ozone water flowing in through the cleaning ozone water discharge line and the common line from contaminating the wafer by flowing back into the chamber through the common line and the initial ozone water discharge line.

Description

Semiconductor manufacturing equipment equipped with ozone water backflow prevention function {SEMICONDUCTOR MANUFACTURING APPARATUS EQUIPPED WITH BACKFLOW PREVENTING FUNCTION OF OZONE WATER}

The present invention relates to a semiconductor manufacturing apparatus provided with an ozone water backflow prevention function. More specifically, according to the present invention, in the process of discharging the ozone water supplied to the chamber during the semiconductor cleaning process through the discharge pipe, the ozone water flows back into the chamber due to an increase in pressure inside the discharge pipe due to the vaporized ozone component to contaminate the wafer. It relates to a semiconductor manufacturing apparatus equipped with an ozone water backflow prevention function capable of preventing a problem.

In general, in the semiconductor manufacturing process, the cleaning process is a process performed at a time point such as before depositing a thin film on the wafer, after ion implantation and etching, and is a process of removing contaminants such as particles, impurities, and organic substances on the wafer. to be.

_{In particular, the method of using ozone (O 3} ) gas is preferred among wet cleaning methods due to various advantages in recent years, which is ozone water (DIO3) generated by mixing ozone gas and ultrapure water (DIW), or ozone water mixture solution of ozone water and chemical solution. (For example, a hydrofluoric acid solution, etc.) is used to oxidize, decompose, and remove contaminants remaining on the wafer. Such ozonated water has advantages such as low price, high decomposition speed, low cost for waste liquid treatment and prevention of environmental pollution because it is decomposed into water and oxygen after use.

1 is a diagram for conceptually explaining a problem in which ozone water flows back into a chamber according to the prior art.

Referring to FIG. 1, since ozone water (DIO3) used in a semiconductor process is an unstable substance and is easily vaporized, pressure on the internal pipe of the drain line when ozone water (DIO3) is used and discarded in the chamber. There is a problem in that the water is not drained and flows back into the chamber to contaminate the wafer.

Republic of Korea Patent Publication No. 10-2009-0060020 (published date: June 11, 2009, name: semiconductor manufacturing equipment using ozone water, its automatic door lock system and its treatment method) Republic of Korea Patent Publication No. 10-2014-0058397 (published date: May 14, 2014, name: semiconductor wafer cleaning method) Korean Patent Publication No. 10-0626869 (Registration date: September 14, 2006, name: Semiconductor wafer cleaning system)

The technical problem of the present invention is to contaminate the wafer by flowing back into the chamber by increasing the pressure inside the discharge pipe by the vaporized ozone component in the process of discharging the ozone water supplied to the chamber during the semiconductor cleaning process through the discharge pipe. It is to provide a semiconductor manufacturing apparatus equipped with an ozone water backflow prevention function capable of preventing problems.

A semiconductor manufacturing apparatus equipped with a function to prevent reverse flow of ozone water according to the present invention for solving these technical problems includes a chamber, a reaction vessel installed inside the chamber and in which a wafer disposed on a spin chuck is located, and a chamber outside the reaction vessel. An initial ozone water discharge line that is installed to extend from the space to the outside of the chamber and provides a discharge path for the initial ozone water sprayed by the dispenser, and the cleaning ozone water sprayed on the wafer and subjected to a cleaning process is discharged to the outside from the reaction vessel. A cleaning ozonated water discharge line providing a path, a common line connected to the end of the initial ozonated water discharge line and the end of the cleaning ozonated water discharge line, and the initial ozonated water that is connected to the common line and introduced through the initial ozonated water discharge line and the common line A drain line providing a discharge path of a drain line and the cleaning ozone water flowing through the cleaning ozonated water discharge line and the common line and connected to the common line and the common line to form the common line and the initial ozone water discharge line. And a vent line to prevent contamination of the wafer by flowing back into the chamber.

The semiconductor manufacturing apparatus provided with the ozonated water backflow prevention function according to the present invention is installed in the washing ozone water discharge line, and further comprises a washing ozone water shutoff valve that blocks the discharge of the washing ozone water from the reaction vessel.

In the semiconductor manufacturing apparatus equipped with an ozonated water backflow prevention function according to the present invention, an initial ozonated water discharged by guiding the initial ozonated water injected by the dispenser to the initial ozonated water discharge line at an end of an initial ozonated water discharge line located inside the chamber. It is characterized in that a guide is formed.

In the semiconductor manufacturing apparatus provided with the ozonated water backflow prevention function according to the present invention, the dispenser injects the initial ozonated water to the initial ozonated water discharge guide while the cleaning ozonated water shutoff valve is closed, and the initial ozonated water discharges the initial ozonated water The washing ozone water is discharged to the outside through the drain line through the line and the common line, the dispenser injects the washing ozone water to the wafer while the washing ozone water shutoff valve is open, and the washing ozone water is the washing ozone water discharge line, the It is discharged to the outside through the drain line through a common line, and when the pressure of the drain line increases due to the vaporization component of the cleaning ozone water, the vaporization component of the cleaning ozone water is discharged to the outside through the vent line. do.

In the semiconductor manufacturing apparatus having an ozone water backflow prevention function according to the present invention, a plurality of chambers are provided, and the initial ozone water discharge line and the cleaning ozone water discharge line are provided for each of the plurality of chambers.

According to the present invention, in the process of discharging the ozone water supplied to the chamber during the semiconductor cleaning process through the discharge pipe, the ozone water flows back into the chamber due to an increase in pressure inside the discharge pipe due to the vaporized ozone component, thereby contaminating the wafer. There is an effect of providing a semiconductor manufacturing apparatus with a function of preventing reverse flow of ozone water.

1 is a diagram for conceptually explaining a problem in which ozone water flows back into a chamber according to the prior art,
2 is a view for conceptually explaining the principle of preventing reverse flow of ozone water into the chamber according to the present invention,
3 is a view showing a semiconductor manufacturing apparatus equipped with an ozone water backflow prevention function according to an embodiment of the present invention based on one chamber,
4 is a view showing a semiconductor manufacturing apparatus equipped with an ozone water backflow prevention function according to an embodiment of the present invention based on a plurality of chambers,
FIG. 5 is a diagram illustrating an example in which a vaporized component of washing ozone water is introduced into and discharged from a vent box through a plurality of vent lines in the embodiment illustrated in FIG. 4.

Specific structural or functional descriptions of the embodiments according to the concept of the present invention disclosed in the present specification are only exemplified for the purpose of describing the embodiments according to the concept of the present invention, and the embodiments according to the concept of the present invention are in various forms. And is not limited to the embodiments described herein.

Since the embodiments according to the concept of the present invention can apply various changes and have various forms, the embodiments will be illustrated in the drawings and described in detail in the present specification. However, this is not intended to limit the embodiments according to the concept of the present invention to specific disclosed forms, and includes all changes, equivalents, or substitutes included in the spirit and scope of the present invention.

Terms such as first or second may be used to describe various constituent elements, but the constituent elements should not be limited by the terms. The above terms are only for the purpose of distinguishing one component from other components, for example, without departing from the scope of the rights according to the concept of the present invention, the first component may be referred to as the second component and similarly the second component. The component may also be referred to as a first component.

When a component is referred to as being "connected" or "connected" to another component, it should be understood that it is directly connected or may be connected to the other component, but other components may exist in the middle. will be. On the other hand, when a component is referred to as being "directly connected" or "directly connected" to another component, it should be understood that there is no other component in the middle. Other expressions describing the relationship between components, such as "between" and "directly between" or "adjacent to" and "directly adjacent to" should be interpreted as well.

The terms used in the present specification are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present specification, terms such as "comprise" or "have" are intended to designate the presence of features, numbers, steps, actions, components, parts, or combinations thereof described herein, but one or more other features. It is to be understood that the presence or addition of elements or numbers, steps, actions, components, parts, or combinations thereof, does not preclude in advance.

Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms as defined in a commonly used dictionary should be interpreted as having a meaning consistent with the meaning in the context of the related technology, and should not be interpreted as an ideal or excessively formal meaning unless explicitly defined in the present specification. .

Hereinafter, with reference to FIG. 2, the features of the present invention compared to the prior art will be conceptually described.

2 is a view for conceptually explaining the principle of preventing reverse flow of ozone water into the chamber 10 according to the present invention.

Referring to FIG. 2, since ozone water (DIO3) used in a semiconductor process is an unstable substance and has a property of being easily vaporized, when ozonated water (DIO3) is used and discarded in a chamber, pressure in the drain line piping is filled. There is a problem of contamination of the wafer by flowing back into the chamber without draining.

The present invention is to solve this problem, by adding an exhaust line to the ozonated water drain line piping so that pressure is not taken up so that drainage is smooth, so that the ozone water to be discharged backflows into the chamber and contaminates the wafer. There is an effect that can be prevented.

Hereinafter, a preferred embodiment of the present invention will be described in detail.

3 is a view showing a semiconductor manufacturing apparatus equipped with an ozonated water backflow prevention function according to an embodiment of the present invention based on one chamber 10, and FIG. 4 is a view showing an ozone water backflow prevention function according to an embodiment of the present invention. A diagram showing the equipped semiconductor manufacturing apparatus based on a plurality of chambers 10, and FIG. 5 is a vent box in which the vaporization component of the cleaning ozone water is provided through a plurality of vent lines in the embodiment embodied in FIG. 4. ) Is a diagram showing an example of inflow and discharge.

3 to 5, a semiconductor manufacturing apparatus equipped with an ozone water backflow prevention function according to an embodiment of the present invention includes a chamber 10, a spin chuck 20, a reaction vessel 30, and an initial ozone water. Discharge line 40, initial ozone water discharge guide 42, clean ozone water discharge line 50, common line 60, drain line 70, vent line 80, and clean ozone water shutoff valve Includes (90).

The chamber 10 provides a space in which a plurality of processes including a cleaning process using ozone water are performed.

The spin chuck 20 is a component in which a wafer W, which is an object of processing, is disposed. For example, when the wafer W is stably gripped by a grip pin installed on the upper surface of the spin chuck 20 and the spin chuck 20 rotates by a driving force provided from the outside, this Rotates in response.

The reaction vessel 30 is installed inside the chamber 10 and is a component in which the wafer W disposed on the spin chuck 20 is located.

For example, a plurality of such reaction vessels 30 may be provided, and different processes using different chemical solutions may be performed in each reaction vessel 30. As a specific example, when the cleaning process is performed in the chamber 10, detailed processes of the cleaning process using different cleaning solutions may be performed in each of the plurality of reaction vessels 30, and the cleaning used after the corresponding process is performed. The solution may be configured to be discharged to the outside of the chamber 10 through the space between the reaction vessels 30.

In particular, for example, a cleaning process using ozone water may be performed in the largest, that is, the outermost container among the plurality of reaction vessels 30, and the ozone water after the process is performed is the outermost container. It can be discharged to the outside through the space between the container and adjacent thereto.

The initial ozonated water discharge line 40 is installed to extend from the inner space of the chamber 10 outside the reaction vessel 30 to the outside of the chamber 10, and the discharge path of the initial ozone water sprayed by a dispenser driven by a robot arm It is a component that provides. The initial ozonated water is ozonated water injected at the beginning of the operation of the dispenser, and since this initial ozonated water may contain foreign substances or the like, it is discharged to the outside through the initial ozonated water discharge line 40.

The initial ozonated water discharge guide 42 is formed at the end of the initial ozonated water discharge line 40 located inside the chamber 10, and is a component that guides the initial ozonated water sprayed by the dispenser to the initial ozonated water discharge line 40 to be.

The cleaning ozone water discharge line 50 is a component that provides a path through which the cleaning ozone water sprayed onto the wafer W and subjected to the cleaning process is discharged from the reaction vessel 30 to the outside. Of course, for example, the cleaning ozonated water is sprayed by a dispenser driven by a robot arm.

The common line 60 is commonly connected to the end of the initial ozone water discharge line 40 and the end of the washing ozone water discharge line 50, and the initial ozone water discharge line 40 and the washing ozone water discharge line 50 will be described later. It is a component that connects the drain line 70 and the vent line 80.

The drain line 70 is connected to the common line 60 and is a component that provides an initial ozone water discharge line 40 and a discharge path of the initial ozone water introduced through the common line 60.

The vent line 80 is connected to the common line 60 and the drain line 70, and the cleaning ozone water flowing through the cleaning ozone water discharge line 50 and the common line 60 discharges the common line 60 and initial ozone water. It is a component that prevents contamination of the wafer W by flowing back into the chamber 10 through the line 40.

The washing ozonated water shut-off valve 90 is installed in the washing ozonated water discharge line 50 and is a component that is switched to a closed state after the washing process using ozone water is completed to block the discharge of the washing ozonated water from the reaction vessel 30. .

For example, in one embodiment of the present invention, an operation of preventing reverse flow of ozone water into the chamber 10 will be exemplarily described as follows.

First, a process in which the dispenser injects initial ozone water to the initial ozone water discharge guide 42 is performed while the washing ozone water shutoff valve 90 installed in the washing ozone water discharge line 50 is closed.

Next, a process of discharging the initial ozone water to the outside through the drain line 70 through the initial ozone water discharge line 40 and the common line 60 is performed.

Next, while the cleaning ozone water shutoff valve 90 is open, a process of spraying the cleaning ozone water onto the wafer W by the dispenser is performed.

Next, a process of discharging the cleaning ozone water to the outside through the cleaning ozone water discharge line 50 and the common line 60 through the drain line 70 is performed. In this process, when the pressure of the drain line 70 increases due to the vaporized component of the cleaning ozonated water, the vaporized component of the cleaning ozonated water does not flow back into the chamber 10 and is discharged to the outside through the vent line 80.

For example, as illustrated in FIG. 4, the chamber 10 may be provided in plural, and the initial ozonated water discharge line 40 and the washing ozonated water discharge line 50 may be configured to be provided for each of the plurality of chambers 10. have. Although it is shown that there are six chambers 10 in FIG. 3, this is only an example, and the number of chambers 10 is not limited thereto.

For example, as illustrated in FIG. 5, in the embodiment embodied in FIG. 4, the vaporization component of the cleaning ozone water is vented through a plurality of vent lines (vent1, vent2, vent3). After flowing into, it may be discharged through the emergency drain line 110 and the final discharge line 120.

As described in detail above, according to the present invention, in the process of discharging the ozone water supplied to the chamber during the semiconductor cleaning process through the discharge pipe, the ozone water flows back into the chamber due to an increase in pressure inside the discharge pipe due to the vaporized ozone component. There is an effect of providing a semiconductor manufacturing apparatus with a function of preventing reverse flow of ozone water capable of preventing a problem of contaminating a wafer.

10: chamber
20: spin chuck
30: reaction vessel
40: initial ozone water discharge line
42: Initial ozone water discharge guide
50: washing ozone water discharge line
60: common line
70: drain line
80: vent line
90: washing ozone water shutoff valve
100: vent box
110: emergency drain line
120: exhaust
W: wafer

Claims (5)

chamber;
A reaction vessel installed inside the chamber and in which a wafer disposed on a spin chuck is located;
An initial ozonated water discharge line installed to extend from an inner space of the chamber outside the reaction vessel to the outside of the chamber and providing a discharge path of the initial ozonated water sprayed by a dispenser;
A cleaning ozone water discharge line providing a path through which cleaning ozone water sprayed onto the wafer and subjected to a cleaning process is discharged from the reaction vessel to the outside;
A common line connected to an end of the initial ozonated water discharge line and an end of the cleaning ozonated water discharge line;
A drain line connected to the common line and providing a discharge path for the initial ozone water discharge line and the initial ozone water introduced through the common line; And
Cleaning ozone water connected to the common line and the drain line and flowing through the cleaning ozone water discharge line and the common line backflow into the chamber through the common line and the initial ozone water discharge line to contaminate the wafer. A semiconductor manufacturing apparatus having a function of preventing reverse flow of ozone water, including a vent line to prevent it.
The method of claim 1,
A semiconductor manufacturing apparatus having a function of preventing reverse flow of ozone water, further comprising a cleaning ozonated water shutoff valve installed in the cleaning ozonated water discharge line and blocking discharge of the cleaning ozone water from the reaction vessel.
The method of claim 2,
An initial ozonated water discharge guide is formed at the end of the initial ozonated water discharge line located inside the chamber to guide the initial ozonated water injected by the dispenser to the initial ozonated water discharge line. Semiconductor manufacturing equipment.
The method of claim 3,
The dispenser injects the initial ozonated water to the initial ozonated water discharge guide while the washing ozone water shutoff valve is closed,
The initial ozonated water is discharged to the outside through the drain line through the initial ozonated water discharge line and the common line,
The dispenser sprays the cleaning ozone water onto the wafer while the cleaning ozone water shutoff valve is open,
The cleaning ozonated water is discharged to the outside through the drain line through the cleaning ozone water discharge line and the common line,
When the pressure of the drain line increases due to the vaporization component of the cleaning ozone water, the vaporization component of the cleaning ozone water is discharged to the outside through the vent line.
The method of claim 1,
The chamber is provided in plurality,
The initial ozonated water discharge line and the cleaning ozonated water discharge line are provided for each of a plurality of chambers.

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