JP2617610B2 - Wafer processing equipment - Google Patents
Wafer processing equipmentInfo
- Publication number
- JP2617610B2 JP2617610B2 JP2216085A JP21608590A JP2617610B2 JP 2617610 B2 JP2617610 B2 JP 2617610B2 JP 2216085 A JP2216085 A JP 2216085A JP 21608590 A JP21608590 A JP 21608590A JP 2617610 B2 JP2617610 B2 JP 2617610B2
- Authority
- JP
- Japan
- Prior art keywords
- pure water
- water treatment
- processing apparatus
- wafer processing
- tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は純水や薬液を用いて、半導体ウェーハ（以後
単にウェーハと称す）のエッチングや洗浄等を行なうウ
ェーハ処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a wafer processing apparatus for etching or cleaning a semiconductor wafer (hereinafter simply referred to as a wafer) using pure water or a chemical solution.
従来、この種のウェーハ処理装置は、薬液槽、純水洗
浄槽および乾燥装置から構成され、ウェーハの装填され
たキャリアを順次それらの槽に一定時間浸漬させ、最後
に乾燥装置によって乾燥され処理が終了していた。Conventionally, this type of wafer processing apparatus is composed of a chemical solution tank, a pure water cleaning tank, and a drying apparatus. Had finished.
第５図は従来の一例を示すウェーハ処理装置の断面図
である。このウェーハ処理装置は、同図に示すように、
一つのフレーム23に取付けられ、薬液14が充された薬液
槽11と、純水処理槽12と乾燥装置13とで構成されてい
る。そして、通常、ウェーハ17はキャリア16に複数枚収
納され、薬液層11,純水層12及び乾燥装置13という順序
に浸漬され、処理されていた。FIG. 5 is a sectional view of a wafer processing apparatus showing one example of the prior art. As shown in FIG.
A chemical solution tank 11 attached to one frame 23 and filled with a chemical solution 14, a pure water treatment tank 12, and a drying device 13. Usually, a plurality of wafers 17 are housed in the carrier 16 and immersed in the order of the chemical liquid layer 11, the pure water layer 12, and the drying device 13 to be processed.
ここで、純水処理槽12は、薬液槽11にて処理された後
のウェーハ17及びキャリア16に付着した薬液14の洗浄除
去および純水15への装填のために行なうものである。ま
た、薬液14は、一般にエッチングであれば、弗酸（HF）
を主体とした混合液が代表的であり、洗浄であれば、ア
ンモニア水（NH4OH）と過酸化水素水（H2O2）を主体と
した混合液、あるいは硫酸（H2SO4）や、塩酸（HC1）と
過酸化水素水（H2O2）を主体とした混合液が主であり、
それらの組合せにより様々な処理が行なわれるものであ
る。Here, the pure water treatment tank 12 is used for cleaning and removing the chemical solution 14 adhered to the wafer 17 and the carrier 16 after the treatment in the chemical solution tank 11 and for loading into the pure water 15. The chemical solution 14 is generally made of hydrofluoric acid (HF) if it is etched.
A typical example is a mixed solution mainly composed of water, and for washing, a mixed solution mainly composed of aqueous ammonia (NH 4 OH) and aqueous hydrogen peroxide (H 2 O 2 ), or sulfuric acid (H 2 SO 4 ) Or a mixture mainly composed of hydrochloric acid (HC1) and aqueous hydrogen peroxide (H 2 O 2 ),
Various processes are performed according to their combination.
さらに、洗浄の場合、酸と過酸化水素水からなり薬液
処理においては、洗浄効果を高めるため高温（数十℃程
度）と過酸化水素を含むことにより、ウェーハ表面が薄
く酸化されることになる。例えば、シリコンウェーハで
あれば、10〜20Å程度の酸化膜が形成される。従って、
同図に示した他の処理装置では、そうした酸化膜の除去
と、ウェーハ表面の金属汚染物等の除去を目的として複
数の薬液槽の最終槽に希弗酸槽を設けた洗浄装置があ
る。このような薬液槽の周辺は、排気口が設けられた
り、槽全体の上方にHEPAフィルタ（High Efficiency Pa
rtiwlate Airfilter）を設けクリーンな大気を吹きつけ
るような構造となっていた。Furthermore, in the case of cleaning, the wafer surface is thinly oxidized by using a high temperature (about several tens of degrees Celsius) and hydrogen peroxide in order to enhance the cleaning effect in the chemical treatment, which is composed of an acid and a hydrogen peroxide solution. . For example, in the case of a silicon wafer, an oxide film of about 10 to 20 ° is formed. Therefore,
In another processing apparatus shown in FIG. 1, there is a cleaning apparatus in which a dilute hydrofluoric acid tank is provided at the last of a plurality of chemical liquid tanks for the purpose of removing such an oxide film and removing metal contaminants and the like on the wafer surface. An exhaust port is provided around such a chemical tank, and a HEPA filter (High Efficiency Pa
rtiwlate Airfilter) was used to blow clean air.
上述した従来のウェーハ処理装置の純水処理槽は、純
水槽の液面はもちろんのこと、全体が大気中にさらされ
ており、特に純水中には、大気中の酸素が大量に取り込
まれ、純水中の溶存酸素量は非常に高くなる。この溶存
酸素量は、ウェーハ表面を酸化するため、エッチングや
洗浄の薬液槽で酸化膜を除去しても、純水処理槽におい
てふたたび酸化されているという欠点がある。The pure water treatment tank of the conventional wafer processing apparatus described above is exposed to the atmosphere as a whole, not to mention the liquid surface of the pure water tank, and in particular, a large amount of oxygen in the atmosphere is taken into the pure water. However, the amount of dissolved oxygen in pure water becomes very high. Since the dissolved oxygen amount oxidizes the wafer surface, even if an oxide film is removed in a chemical bath for etching or cleaning, there is a defect that the dissolved oxygen amount is oxidized again in the pure water treatment bath.
第３図は従来のウェーハ処理装置の純水処理槽中での
処理時間と酸化膜厚の関係のグラフを示す図である。こ
の酸化膜は同図に示すように、溶存酸素量300ppbのレベ
ルにおいて、通常の純水洗浄時間の場合、１〜４Å程度
の酸化膜となる。そのため、MNOS（Metal Nitride Oxid
e Silicon）構造における半導体装置の極めて薄いゲー
ト酸化膜や超LSI半導体装置のゲート酸化膜等の形成に
誤差として取り込まれ、膜厚制御が困難となったり、ま
た純水中で形成される酸化膜の膜質が悪いため、特性上
も信頼性を高める上での問題となっている。FIG. 3 is a graph showing a relationship between a processing time in a pure water processing tank of a conventional wafer processing apparatus and an oxide film thickness. As shown in the figure, this oxide film becomes an oxide film of about 1 to 4 ° at a level of a dissolved oxygen amount of 300 ppb in the case of ordinary pure water cleaning time. Therefore, MNOS (Metal Nitride Oxid
(e Silicon) The oxide film formed in the ultra-thin gate oxide film of the semiconductor device and the gate oxide film of the VLSI semiconductor device is included as an error, making it difficult to control the film thickness or forming the oxide film in pure water. Is poor in film quality, which is a problem in improving reliability in terms of characteristics.
第４図は従来のウェーハ処理装置の純水処理槽での純
水流量と溶存酸素量の関係のグラフを示す図である。こ
の図からわかるように、純水製造時の溶存酸素量を低く
おさえても、液面から大量に大気中の酸素を取り込んで
いることがわかる。純水流量が多いほど、液面における
純水の踊りが激しく、大量に酸素を取り込む。静水状態
での溶存酸素量は少ないが、本来の洗浄、薬液の装置等
の機能が果せなく実用的ではない。FIG. 4 is a graph showing a relationship between a pure water flow rate and a dissolved oxygen amount in a pure water treatment tank of a conventional wafer processing apparatus. As can be seen from this figure, even if the amount of dissolved oxygen during production of pure water is kept low, a large amount of oxygen in the atmosphere is taken in from the liquid surface. The higher the flow rate of pure water, the more intense the pure water dances on the liquid surface and the more oxygen is taken up. Although the amount of dissolved oxygen in a hydrostatic state is small, it is not practical because the functions of the original cleaning and chemical liquid devices cannot be performed.
本発明の目的は、かかる問題を解消するウェーハ処理
装置を提供することである。An object of the present invention is to provide a wafer processing apparatus that solves such a problem.
本発明のウェーハ処理装置は、ウェーハを薬液処理す
る薬液槽と、処理された前記ウェーハを純水を用いて洗
浄する純水処理槽と有するウェーハ処理装置において、
前記純水処理槽の開口を閉じる隔離板を設け、この隔離
板が開くときか、あるいは閉じているときでも前記純水
の液面に窒素ガスを吹付けることによって大気と純水と
を遮断していることを特徴としている。The wafer processing apparatus of the present invention is a wafer processing apparatus having a chemical solution tank for processing a wafer with a chemical solution, and a pure water processing tank for cleaning the processed wafer with pure water.
A separator is provided to close the opening of the pure water treatment tank, and when the separator is opened or closed, the atmosphere and pure water are shut off by blowing nitrogen gas onto the liquid surface of the pure water. It is characterized by having.
次に、本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
第１図（ａ）及び（ｂ）は本発明の一実施例のウェー
ハ処理装置の純水処理槽の断面図である。このウェーハ
処理装置の純水処理槽１は、同図に示すように、その開
口部を蓋する液面隔離板３とこの液面隔離板３を開けた
ときに、窒素ガスを液面に吹き付けるN2ノズル４を設け
たことである。すなわち、純水２は、液面隔離板３によ
り大気と隔離された状態で純粋供給口５から供給され廃
液口６へとオーバーフローによって流れる。従って、大
気中の酸素の槽内への侵入・溶解はなく純水中の溶存酸
素量は、純水製造時の値に維持される。また、ウェーハ
の装填されたキャリアの純水処理槽１内への搬送、搬出
の際は、第１図（ｂ）に示すように、液面隔離板３を移
動させ、N2ノズル４から、窒素ガス７を液面に吹きつ
け、液面と大気の接触を防止する。この時、純水供給口
５からの純水２の流入量を、最小におさえることにより
液面を静水の状態にすることによって、搬送、搬出の時
間が短かければ、窒素ガス７の液面への吹き付けは、特
に必要としない。1 (a) and 1 (b) are cross-sectional views of a pure water treatment tank of a wafer processing apparatus according to one embodiment of the present invention. As shown in the figure, a pure water treatment tank 1 of this wafer processing apparatus sprays nitrogen gas onto the liquid surface when the liquid level separator 3 is opened and the liquid level separator 3 is opened. it is providing the N 2 nozzle 4. That is, the pure water 2 is supplied from the pure supply port 5 while being isolated from the atmosphere by the liquid level separator 3 and flows to the waste liquid port 6 by overflow. Accordingly, there is no intrusion and dissolution of oxygen in the atmosphere into the tank, and the amount of dissolved oxygen in pure water is maintained at the value at the time of pure water production. The transport of the wafers loaded deionized water treatment tank 1 of the carrier, during unloading, as shown in Fig. 1 (b), moves the liquid surface separator 3, the N 2 nozzle 4, Nitrogen gas 7 is blown onto the liquid surface to prevent contact between the liquid surface and the atmosphere. At this time, the inflow of the pure water 2 from the pure water supply port 5 is kept to a minimum so that the liquid surface is in a still water state. No special spraying is required.
第２図は本発明の他の実施例の示すウェーハ処理装置
における純水処理槽の断面図である。このウェーハ処理
装置の純水処理層1aを蓋する液面隔離板3aと、窒素ガス
７を純水２の液面に吹き付けるとともに液面隔離板3aに
取付けられたN2配管８を設けたことである。このことに
より、薬液の除去と、純水への置換を早めるために、純
水処理槽1aの純水２の引き抜きと、オーバーフローを繰
り返すことである。すなわち、純水２の引き抜きの際、
液面隔離板3aに設けられた、N2吹出口９からN2配管８に
より、引き抜きと同時に窒素ガス７が供給される。ま
た、純水２は、図示していない純水供給口より供給す
る。この実施例では、引き抜きによる大気の侵入を防止
し純水中の溶存酸素量の増加も防止できる利点がある。FIG. 2 is a sectional view of a pure water treatment tank in a wafer processing apparatus according to another embodiment of the present invention. A liquid level separator 3a for covering the pure water treatment layer 1a of the wafer processing apparatus, and an N 2 pipe 8 attached to the liquid level separator 3a while spraying nitrogen gas 7 on the liquid level of the pure water 2 are provided. It is. In this way, in order to expedite the removal of the chemical solution and the replacement with the pure water, the extraction of the pure water 2 from the pure water treatment tank 1a and the overflow are repeated. That is, when the pure water 2 is withdrawn,
Nitrogen gas 7 is supplied at the same time as the gas is extracted from an N 2 outlet 9 provided in the liquid level separator 3a through an N 2 pipe 8. The pure water 2 is supplied from a pure water supply port (not shown). In this embodiment, there is an advantage that the intrusion of the atmosphere due to withdrawal can be prevented, and the amount of dissolved oxygen in pure water can be prevented from increasing.
以上説明したように本発明は、ウェット処理装置の純
水処理槽に液面と大気を物理的に隔離する手段を有する
ことにより、大気中の酸素の純水への溶解を防止し、純
水製造時の溶存酸素量を維持することが可能である。そ
れによって、ウェーハ表面の酸化を防止し、最小限にと
どめることができる。従って、MNOS構造を有する半導体
装置の極めて薄いゲート酸化膜厚の制御や、超LSI半導
体装置のゲート酸化膜厚の制御を簡単にし、更に特性上
に信頼性も向上できる効果がある。As described above, the present invention prevents the oxygen in the atmosphere from dissolving in pure water by providing a means for physically isolating the liquid surface and the atmosphere in the pure water treatment tank of the wet treatment apparatus. It is possible to maintain the dissolved oxygen amount during production. Thereby, oxidation of the wafer surface can be prevented and minimized. Therefore, the control of the extremely thin gate oxide film thickness of the semiconductor device having the MNOS structure and the control of the gate oxide film thickness of the VLSI semiconductor device can be simplified and the reliability can be improved in terms of characteristics.
第１図（ａ）及び（ｂ）は本発明の一実施例を示すウェ
ーハ処理装置における純水処理槽の断面図、第２図は本
発明の他実施例を示すウェーハ処理装置における純水処
理槽の断面図、第３図は従来のウェーハ処理装置の純水
処理槽中での処理時間と酸化膜厚の関係のグラフを示す
図、第４図は従来のウェット処理装置の純水層での純水
流量と溶存酸素量の関係のグラフを示す図、第５図は従
来のウェーハ処理装置一例を示す断面図である。 １……純水処理槽、２……純水、3,3a……液面隔離板、
４……N2ノズル、５……純水供給口、６……排液口、７
……窒素ガス、８……N2配管、９……N2吹出口、11……
薬液槽、12……純水処理槽、13……乾燥装置、14……薬
液、15……純水、16……キャリア、17……ウェーハ、18
……純水供給口、19……排液口、20……上蓋、21……回
転台、22……モータ、23……フレーム。1 (a) and 1 (b) are cross-sectional views of a pure water treatment tank in a wafer processing apparatus showing one embodiment of the present invention, and FIG. 2 is pure water treatment in a wafer processing apparatus showing another embodiment of the present invention. FIG. 3 is a graph showing the relationship between the processing time and the oxide film thickness in a pure water processing tank of a conventional wafer processing apparatus, and FIG. 3 is a pure water layer of a conventional wet processing apparatus. And FIG. 5 is a sectional view showing an example of a conventional wafer processing apparatus. 1 ... Pure water treatment tank, 2 ... Pure water, 3,3a ... Liquid level separator,
4 ...... N 2 nozzle, 5 ...... pure water supply port, 6 ...... drain port, 7
...... nitrogen gas, 8 ...... N 2 piping, 9 ...... N 2 outlet, 11 ......
Chemical solution tank, 12 Pure water treatment tank, 13 Drying device, 14 Chemical solution, 15 Pure water, 16 Carrier, 17 Wafer, 18
... pure water supply port, 19 ... drain port, 20 ... top lid, 21 ... turntable, 22 ... motor, 23 ... frame.
Claims (2)
理された前記半導体ウェーハを純水を用いて洗浄する純
水処理槽とを有するウェーハ処理装置において、前記純
水処理層の液面を大気と物理的に隔離する手段をさらに
有し、前記隔離する手段は、前記純水処理槽の開口を開
閉する隔離板と、前記純水の液面に窒素ガスを吹き付け
るノズルとを備え、前記隔離板が開くときに、前記ノズ
ルが前記純粋の液面に窒素ガスを吹き付けることを特徴
とするウェーハ処理装置。In a wafer processing apparatus having a chemical solution tank for treating a semiconductor wafer with a chemical solution and a pure water treatment tank for cleaning the treated semiconductor wafer with pure water, the liquid level of the pure water treatment layer is adjusted to atmospheric pressure. Further comprising means for physically isolating the pure water treatment tank, wherein the isolating means comprises: a separator for opening and closing an opening of the pure water treatment tank; and a nozzle for blowing nitrogen gas to a liquid level of the pure water. A wafer processing apparatus, wherein when the plate is opened, the nozzle blows nitrogen gas onto the pure liquid level.
処理された前記半導体ウェーハを純水を用いて洗浄する
純水処理槽とを有するウェーハ処理装置において、前記
純水処理層の液面を大気と物理的に隔離する手段をさら
に有し、前記隔離する手段は、前記純水処理槽の開口を
閉じる隔離板と、前記隔離板に取り付けられると共に、
前記純粋の液面に窒素ガスを吹き付ける配管とを有する
ことを特徴とするウェーハ処理装置。2. A chemical solution tank for treating a semiconductor wafer with a chemical solution,
A wafer processing apparatus having a pure water treatment tank for cleaning the treated semiconductor wafer using pure water, further comprising: means for physically isolating a liquid surface of the pure water treatment layer from the atmosphere; Means for closing the opening of the pure water treatment tank, and attached to the separator,
A pipe for blowing nitrogen gas to the pure liquid level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2216085A JP2617610B2 (en) | 1990-08-16 | 1990-08-16 | Wafer processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2216085A JP2617610B2 (en) | 1990-08-16 | 1990-08-16 | Wafer processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0497525A JPH0497525A (en) | 1992-03-30 |
| JP2617610B2 true JP2617610B2 (en) | 1997-06-04 |
Family
ID=16683017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2216085A Expired - Fee Related JP2617610B2 (en) | 1990-08-16 | 1990-08-16 | Wafer processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2617610B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4672464B2 (en) * | 2005-06-30 | 2011-04-20 | 東京エレクトロン株式会社 | Cleaning apparatus and cleaning method, and computer-readable storage medium |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587830A (en) * | 1981-07-08 | 1983-01-17 | Hitachi Ltd | Article washing method and device thererof |
| US4738272A (en) * | 1984-05-21 | 1988-04-19 | Mcconnell Christopher F | Vessel and system for treating wafers with fluids |
| JPS62283632A (en) * | 1986-05-31 | 1987-12-09 | Toshiba Corp | Wafer processor |
| JPH01118436U (en) * | 1988-02-04 | 1989-08-10 | ||
| JPH049773A (en) * | 1990-04-27 | 1992-01-14 | Fujitsu Ltd | Method for measuring specific resistance value of water |
-
1990
- 1990-08-16 JP JP2216085A patent/JP2617610B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0497525A (en) | 1992-03-30 |
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