TW201600183A - Clean method, clean water supply device and clean device for element Ge substrate - Google Patents

Abstract

Provided is a clean method and device capable of restraining Ge oxidation, dissolution and the rough surface due to the dissolution and performing effective clean or wash at the same time in the clean process or wash process of the Ge substrate. The water after removing DO and hydrogen peroxide is employed for cleaning the Ge substrate, thereby to restrain the Ge oxidation, dissolution. The clean water can be the gas dissolved water dissolved with non-oxidizing gas, such as hydrogen, nitrogen, or added with medicine. The clean can be performed with ultrasonic clean, high pressure spraying clean or two fluids clean.

Description

Cleaning method for component Ge substrate, washing water supply device and cleaning device

The present invention relates to a technique in which a germanium (Ge) substrate for an electronic component is washed to a high degree of cleanliness while suppressing Ge dissolution and surface roughness due to dissolution.

A high-concentration chemical solution or a detergent is conventionally used for washing a Si substrate to be an electronic component, such as RCA cleaning. A method of dissolving water in which a gas such as hydrogen, oxygen, or ozone is dissolved in ultrapure water has been proposed as a method of washing a high-concentration chemical solution or a detergent (Patent Document 1).

In recent years, the miniaturization of components has progressed, and Si substrates have been used for gate or channel materials. In order to achieve high mobility in a CMOS (Complementary Metal Oxide Semiconductor), a Ge substrate is used instead of the Si substrate as a channel.

The oxide of Ge is easily dissolved. Due to the oxidizing substance (dissolved oxygen, hydrogen peroxide, etc.) in the liquid, Ge is oxidized and promoted, and it is easily dissolved. Therefore, the surface roughness of the substrate is increased, the film is lost, etc. (hereinafter referred to as "surface roughness") ).

In the cleaning of the Ge substrate, a cleaning method in which the surface of the substrate is not oxidized and dissolved as much as possible in the rinsing process of the cleaning process or the rinsing drug is expected. However, a cleaning method for preventing a surface of the Ge substrate from being oxidized and dissolved while obtaining a sufficient cleaning effect has not been determined.

[Previous Technical Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2012-186348

The present invention has been made in view of the above-described conventional circumstances, and it is an object of the present invention to provide an effective cleaning process for suppressing Ge oxidation, dissolution, and surface roughness due to dissolution in a cleaning process or a cleaning process of a Ge substrate. A cleaning method for cleaning the net or washing, a washing water supply device, and a washing device.

As a result of intensive studies to solve the above problems, the present inventors have found that Ge is oxidized by dissolved oxygen or hydrogen peroxide in water to promote dissolution, and therefore, the removed water is used for washing or washing. Thereby, Ge dissolution can be suppressed. The inventors used hydrogen to dissolve The reducing hydrogen dissolves water or dissolves nitrogen to suppress the dissolution of oxygen in water, thereby further suppressing oxidation and dissolution of Ge. The present inventors have found that such dissolved oxygen, hydrogen peroxide is removed, hydrogen and nitrogen are added in combination, or chemical cleaning such as ultrasonic waves or chemical addition of a small amount of a drug is added, thereby exhibiting impurities such as fine particles. Removal.

The present invention has been made in view of the above-described findings, and the gist thereof is as follows.

[1] A method for cleaning a Ge substrate for a device, which is a method for cleaning a device with a Ge substrate, which is characterized in that the water after removal of dissolved oxygen is used for cleaning.

[2] In the method for cleaning a Ge substrate for a device according to [1], water after removing dissolved oxygen and hydrogen peroxide is used for the cleaning.

[3] The method for cleaning a Ge substrate for a device according to [1] or [2], wherein the water used for the cleaning has a dissolved oxygen concentration of 50 μg/L or less and a H ₂ O ₂ concentration of 50 μg/L or less.

[4] The method for cleaning a Ge substrate for a device according to any one of [1] to [3], wherein the water used for the cleaning is a gas in which a non-oxidizing gas is dissolved.

[5] The method for cleaning a Ge substrate for a device according to [4], wherein the non-oxidizing gas is hydrogen gas and/or nitrogen gas.

[6] The method for cleaning a Ge substrate for a device according to any one of [1] to [5], wherein the water used for the cleaning comprises a group selected from the group consisting of an acid, a base, a chelating agent, and a surfactant. One or two or more drugs.

[7] In the method for cleaning a Ge substrate for use in the element according to any one of [1] to [6], ultrasonic cleaning, high-pressure jet cleaning, or two-fluid cleaning is performed.

[8] A device for supplying a clean water to a Ge substrate for use in a device for supplying a cleaning water for cleaning a Ge substrate to a cleaning device for a Ge substrate, characterized in that: a degassing means for removing dissolved oxygen; and means for supplying the water after the dissolved oxygen is removed by the degassing means to the washing machine.

[9] In the washing water supply device for a Ge substrate for a component of [8], a hydrogen peroxide removing means for removing hydrogen peroxide in water is further provided, and after the hydrogen peroxide removing means and the degassing means are treated The water is supplied to the aforementioned washing machine.

[10] The apparatus for supplying a clean water to a Ge substrate for a component according to [8] or [9], wherein the non-oxidizing gas is dissolved in a gas dissolving means for removing dissolved oxygen by the degassing means, The water treated by the gas dissolving means is supplied to the washing machine.

[11] The water supply device for a Ge substrate for a device according to any one of [8] to [10], wherein the water after the dissolved oxygen is removed by the degassing means is selected from the group consisting of acid, alkali, and hydrazine. A medicine addition means for one or two or more kinds of medicines in which a mixture and a surfactant are grouped.

[12] A device for cleaning a device for a Ge substrate, which is characterized in that the device is cleaned by a Ge substrate, and the device has a Ge substrate for a device according to any one of [8] to [11] a washing water supply device; and a washing water supply device for supplying the Ge substrate from the device Clean water washing machine.

[13] The apparatus for cleaning a Ge substrate for a component according to [12], wherein the cleaning device is an ultrasonic cleaner, a high-pressure jet cleaner, or a two-fluid cleaner.

According to the present invention, it is possible to effectively perform cleaning or washing and cleaning while suppressing Ge oxidation, dissolution, and surface roughness due to dissolution in a cleaning process or a cleaning process of a Ge substrate. By adding a gas such as hydrogen or a chemical, or by physically washing with ultrasonic waves or the like, an impurity removal effect such as fine particles can be obtained, and a high washing effect can be obtained.

1‧‧‧H ₂ O ₂ removal device

2‧‧‧ Degassing membrane module

3‧‧‧ gas dissolving membrane module

4‧‧‧cleaning machine

5‧‧‧Supersonic nozzle

6‧‧‧Ge substrate

7‧‧‧Rotary table

10‧‧‧Exhaust pump

11‧‧‧Water flow meter

12‧‧‧Gas flow adjustment mechanism

Fig. 1 is a system diagram showing an embodiment of a cleaning apparatus for a Ge substrate for a component of the present invention.

Hereinafter, embodiments of the present invention will be described in detail.

In the present invention, when the Ge substrate for the element is cleaned, the dissolved oxygen (DO) in the water or even the water after the hydrogen peroxide (H ₂ O ₂ ) is removed to prevent the cleaning. When the Ge is oxidized, dissolved, and the surface is rough due to dissolution.

In the present invention, the washing means is included to carry out the microparticles. The cleaning after the removal of the pollution, and the washing and washing after the washing of the drug or the like, that is, both of the cleaning and washing are performed.

In the present invention, the water used for the cleaning of the Ge substrate may be a gas-dissolved water obtained by dissolving a non-oxidizing gas such as hydrogen or nitrogen, or may be a drug containing an acid, a base, a chelating agent, or a surfactant. By using the water as described above, it is possible to suppress the effect of removing impurities such as fine particles by suppressing oxidation, dissolution, and surface roughness of Ge.

The cleaning of the Ge substrate can provide a higher cleaning effect by imparting a physical cleaning action such as ultrasonic cleaning, high-pressure jet cleaning, and two-fluid cleaning.

<DO removal>

The DO removal device for water supply is not particularly limited as long as it does not deteriorate the water quality, and a vacuum degassing tower, a membrane degassing device, or the like can be used, and a membrane degassing device which is simple and easy to manage is suitable. If the exhaust mechanism is not to deteriorate the water quality, there is no limit. A vacuum pump using oil is used for the reverse diffusion of oil, and the water quality is deteriorated. Therefore, an oil-free scroll vacuum pump or a water seal vacuum pump or the like is used.

The water used for the cleaning of the Ge substrate is preferably removed by DO, and the DO concentration is reduced to 50 μg/L or less, for example, about 1 to 10 μg/L. If the DO concentration is higher than the above upper limit, there is a possibility that the oxidation and dissolution of Ge cannot be suppressed. Even if the DO concentration is excessively reduced, it is impossible to obtain a commensurate effect, and it is economically disadvantageous to increase the cost of degassing.

<H ₂ O ₂ removal>

If the water supply does not contain H ₂ O ₂ , the removal of H ₂ O ₂ from the water supply is not required. When the water supply contains H ₂ O ₂ , the removal of H ₂ O ₂ is performed by the water supply. In terms of H ₂ O ₂ removal method, preferably using a catalyst like Pt or Pb, or sulfurous acid type resin or the like, the H ₂ O ₂ removal method of reduction. When the H ₂ O ₂ removal mechanism is a reaction mechanism for decomposing H ₂ O ₂ to form oxygen and water, it is preferred to decompose H ₂ O ₂ before removing DO, thereby causing H ₂ O ₂ . The oxygen that has occurred in the decomposition remains. When a catalyst such as Pt is used, and hydrogen is used to reduce H ₂ O ₂ to form a reaction mechanism for water, it may be carried out in the front stage of DO removal or in the latter stage.

The water used for the cleaning of the Ge substrate has a H ₂ O ₂ concentration of 1 μg/L or less, and particularly preferably a detection limit value obtained by a colorimetric method or less.

<gas dissolution>

The non-oxidizing gas may be dissolved in the water after the removal of DO and the removal of H ₂ O ₂ as needed, as described above, and used for washing. By using a gas to dissolve water, the effect of removing impurities such as fine particles can be enhanced.

In the non-oxidizing gas, one or two or more kinds of rare gases such as hydrogen, nitrogen, and argon may be used as long as the Ge is not oxidized. It is especially preferred to use hydrogen or nitrogen.

It is preferred to dissolve the non-oxidizing gas by using a gas-dissolving film which is simple and easy to manage. The amount of gas dissolved by the gas-dissolving film is usually in accordance with the amount of water sensed by the flow meter, by mass A gas flow regulating mechanism such as a flow controller performs adjustment.

The gas concentration of the dissolved water in the gas used for cleaning the Ge substrate is not particularly limited, and may be a saturated solubility in a water temperature that does not reach the washing water, or may be a saturated solubility or higher. Since the higher the concentration of the dissolved gas, the higher the cleaning effect tends to be. Therefore, the cost required for the gas to dissolve is preferable, and the concentration of the dissolved gas is preferably high. For example, if it is hydrogen, it is preferably 1.2 to 1.6 mg/L, and if it is nitrogen, it is preferably about 14 to 18 mg/L.

<medicine added>

An acid such as hydrochloric acid, sulfuric acid, hydrofluoric acid, phosphoric acid or acetic acid, or an alkali such as ammonia, TMAH (tetramethylammonium hydroxide) or choline, or a chelating agent or a surfactant may be added to the washing water. One or two or more kinds of drugs. By adding the drug as shown above, the effect of removing contamination by fine particles or the like can be enhanced. A base such as ammonia is added, and the pH of the washing water is adjusted to 7 or more, preferably 9 to 14 by alkali, whereby the removal effect of fine particles or the like can be improved. In this pH adjustment, an alkaline gas may be used in addition to the alkaline drug, but it is preferable to use ammonia which is easy to handle and can be easily subjected to concentration management. A good washing effect can be obtained by using a washing water having an added ammonia of 1 mg/L or more, for example, about 1 to 200 mg/L, and adjusted to pH 7-11. If the pH of the washing water is too high or the amount of ammonia added is too large, there is a risk of damage to the object to be washed.

The addition of the drug may be after the dissolution of the gas described above, or before dissolution.

<Water supply piping>

The piping for supplying the water supply and the washing water to which the water supply is applied to the water supply to the washing machine is not particularly limited as long as the water quality is deteriorated, but CVP (vinyl fluoride) having a low gas permeability is used. A material such as PVDF (polyvinylidene fluoride) is preferred.

<water temperature>

The temperature of the water supply and the washing water varies depending on the heat resistance of each part of the water supply pipe or the water supply mechanism, but is usually in the range of 20 to 80 ° C, and is preferably formed to have a temperature of, for example, 20 to 30 ° C or 60 to 80 ° C.

<Washing method>

The washing method in the present invention is not particularly limited, and a method of washing the washed water with the washing water or washing the washed object in the washing water may be used. Any method known in the past, such as a net method. Ultrasonic cleaning by adding ultrasonic waves to the washing water, or discharging the mixed fluid of the washing water or the washing water and the gas to the object to be washed, and washing the high-pressure jet by the discharge nozzle. Or two fluid washes are preferred.

When the ultrasonic cleaning is performed, the object to be washed may be immersed in the washing water to impart ultrasonic waves to the washing water immersed in the object to be washed, or the ultrasonic wave may be applied to the object to be washed. Water to clean the single piece Washed.

There is no limitation on the ultrasonic wave used for ultrasonic cleaning, but it is suitable for using a supersonic wave of 10 kHz to 3 MHz which is generally used.

When the high-pressure jet cleaning is performed, the discharge conditions of the washing water discharged from the washing fluid discharge nozzle can be, for example, the following conditions.

Washing water supply: 0.5~30L/min

Nozzle hydraulic pressure: 5~20MPa

In the case of the gas (carrier gas), one or two or more kinds of non-oxidizing gases such as nitrogen, hydrogen, and argon gas can be used. The discharge conditions of the washing water and the carrier gas discharged from the washing fluid discharge nozzle can be, for example, the following conditions.

Washing water supply: 0.05~0.5L/min

Nozzle hydraulic pressure: 0.05~0.5MPa

Carrier gas pressure: 0.1~0.6MPa

The washing time varies depending on the quality of the washing water used, the dissolution of the gas, the presence or absence of the addition of the drug, and other washing conditions. If it is washed in a single piece, it is usually about 30 to 180 seconds.

<cleaning device>

Hereinafter, the washing apparatus of the present invention will be specifically described with reference to Fig. 1 .

In Fig. 1, 1 is a H ₂ O ₂ removal device, 2 is a degassing membrane module, 3 is a gas dissolving membrane module, 4 is a washing machine, 5 is an ultrasonic nozzle, and 6 is a system. The Ge substrate as the object to be washed and the 7-series show the turntable. 10 is an exhaust pump for vacuum drawing the gas chamber side of the deaeration membrane module 2, 11 is a water flow meter, and 12 is a gas flow rate adjusting mechanism.

The water supply such as pure water is first dehumidified by the degassing membrane module 2 after removing the H ₂ O ₂ by the H ₂ O ₂ removing device 1, and the DO in the water is removed. The water system after the DO is removed by the degassing membrane module 2 is then dissolved in the gas-dissolving membrane module 3 to cause a non-oxidizing gas such as hydrogen. The gas flow rate of the gas-dissolving membrane module 3 is controlled by the gas flow rate adjusting mechanism 12 based on the measured value of the water flow meter 11, and the gas dissolved water having a predetermined dissolved gas concentration is prepared.

The gas-dissolved water from the gas-dissolving membrane module 3 is ultrasonically applied to the ultrasonic substrate 5 of the cleaning machine 4, and then ultrasonic waves are applied to the Ge substrate 6. The Ge substrate 6 is placed on the turntable 7 and is blown and washed while rotating the Ge substrate 6.

[Examples]

The present invention will be more specifically described by the following examples, but the present invention is not limited to the following examples as long as the invention is not exceeded.

[Example 1]

A Ge substrate contaminated with Si particles by the cleaning device shown in FIG. 1 3吋, the number of fine particles before washing: about 2000/substrate) As a washed object, a washing experiment was performed.

The number of fine particles on the surface of the Ge substrate before and after the washing was determined by observing the surface of the Ge substrate with a laser microscope and measuring the number of fine particles of 0.5 μm or more. The removal rate was calculated from the number of fine particles before and after washing.

The specifications or conditions of each part are as follows.

Degassing membrane: "Liqui-Cel G248" manufactured by Polypore

Gas Dissolving Membrane: "Liqui-Cel G248" manufactured by Polypore

H ₂ O ₂ removal device: "Nanosaver (registered trademark)" by Kurita Industrial Co., Ltd.

Supply gas: hydrogen

Water supply: pure water

Water temperature: 25 ° C

Water volume 5L/min

Hydrogen flow rate: 78mL/min

Pure water is set as the water supply. Pure water to H ₂ O ₂ removing means (Nanosaver) 1 H ₂ O ₂ will be decomposed and removed to form H ₂ O ₂ concentration of <1μg / L, degassed and formed film to degas module 2 The DO concentration was about 10 μg/L, and was supplied to the gas-dissolved film module 3 at 5 L/min. In the hydrogen system, the dissolved hydrogen gas concentration was 1.4 mg/L, and the amount of hydrogen gas supplied was 78 L/min to dissolve the entire amount. After adding 1 mg/L of ammonia to the subsequent stage of the gas-dissolving membrane module 3, it was adjusted so as to have a pH of about 9.5, and was supplied to the ultrasonic nozzle type single-chip washing machine 4. The ultrasonic system was formed at a Megasonic (MS) frequency of 1 MHz, and the washing time was formed to be 120 seconds.

The number of fine particles on the cleaned Ge substrate was investigated to determine the number of particles. Sub-removal rate. The surface of the Ge substrate is roughened by Ge analysis in water by ICP-MS (Ge dissolution concentration in water obtained by oxidation and dissolution of Ge) and surface roughness of Ge substrate by AFM (Atomic Force Microscope) The measurement of the degree Rmax was performed. The results are shown in Table 1.

[Example 2]

In Example 1, H ₂ O ₂ removal of pure water, hydrogen dissolution, and ammonia addition were not performed. The pure water was formed into H ₂ O ₂ 1 μg/L and DO 10 μg/L by degassing, and then supplied to the ultrasonic nozzle type single-chip washing machine 4. Otherwise, the Ge substrate was ultrasonically washed in the same manner as in Example 1. The state of the fine particle removal rate and the surface roughness of the Ge substrate were examined for the cleaned Ge substrate, and the results are shown in Table 1.

[Example 3]

In Example 1, hydrogen gas which was not supplied with water and ammonia were added. The pure water is treated in the H ₂ O ₂ removal device 1 to decompose and remove H ₂ O ₂ to form H ₂ O ₂ <1 μg/L and DO 10 μg/L, and then supplied to the ultrasonic nozzle type single-chip wash. Net machine 4. Otherwise, the Ge substrate was ultrasonically washed in the same manner as in Example 1. The state of the fine particle removal rate and the surface roughness of the Ge substrate were examined for the cleaned Ge substrate, and the results are shown in Table 1.

[Example 4]

In Example 1, ammonia addition without water supply was performed. Pure water is treated in the H ₂ O ₂ removal device 1 to decompose and remove H ₂ O ₂ , degassed in the degassing membrane module 2, and hydrogen is dissolved in the gas dissolution module 3 to form H ₂ O _{2 .} <1 μg/L, about 10 μg/L of DO, and a dissolved hydrogen concentration of 1.4 mg/L, and then supplied to the ultrasonic nozzle type single-chip washing machine 4. Otherwise, the Ge substrate was ultrasonically washed in the same manner as in Example 1. The state of the fine particle removal rate and the surface roughness of the Ge substrate were examined for the cleaned Ge substrate, and the results are shown in Table 1.

[Example 5]

In the first embodiment, the Ge substrate was washed in the same manner except that the cleaning device 4 was not subjected to ultrasonic cleaning. The state of the fine particle removal rate and the surface roughness of the Ge substrate were examined for the cleaned Ge substrate, and the results are shown in Table 1.

[Comparative Example 1]

In Example 1, the H ₂ O ₂ removal, degassing, hydrogen gas dissolution, and ammonia addition without water supply were performed, and pure water having a H ₂ O ₂ concentration of 10 μg/L and a DO concentration of several hundred μg/L was directly supplied as it is. Ultrasonic nozzle type single-chip washing machine 4. Otherwise, the Ge substrate was ultrasonically washed in the same manner as in Example 1. The state of the fine particle removal rate and the surface roughness of the Ge substrate were examined for the cleaned Ge substrate, and the results are shown in Table 1.

[Reference Example 1]

The contaminated Si substrate contaminated with the contaminated Ge substrate of Example 1 was replaced with a Ge substrate as a material to be washed, and washed in the same manner as in Comparative Example 1. The state of the fine particle removal rate and the surface roughness of the Si substrate (Rmax) were examined for the Si substrate after the cleaning, and the results are shown in Table 1.

Table 1 shows the following.

In Comparative Example 1 in which ultrasonic cleaning was performed without any treatment on pure water, although the fine particle removal rate was not high, there was a problem that the surface of the Ge substrate was rough. This result indicates that even if pure water is used as the washing water, the surface roughness of the Ge substrate cannot be prevented.

On the other hand, in Example 1 in which ultrasonic cleaning was performed using H ₂ O ₂ removal, DO removal by degassing, hydrogen dissolution, and ammonia addition as the washing water, the most excellent results were obtained. The surface roughness of the Ge substrate is suppressed, and a high particle removal rate can be obtained.

With respect to Example 1, only Example 4 in which ammonia was not added was able to suppress the surface roughness of the Ge substrate in the same manner as in Example 1, and the cleaning effect of Example 1 was higher than that of Example 1. From this result, it is understood that the presence or absence of the addition of the drug takes into consideration both the cleaning cost and the cleaning effect, and therefore it is appropriately selected in accordance with the economical level and the required level of the washing result.

In Example 3, which was carried out in the same manner as in Example 1 except that the ultrasonic wave was not applied, or in Example 3 except that the H ₂ gas was not dissolved and the ammonia was added in the same manner, the fine particle removal rate was obtained. Poor, but the surface roughness of the Ge substrate is sufficiently suppressed.

In Example 2 in which ultrasonic cleaning was performed only by DO removal by degassing, the fine particle removal rate was worse than that of Comparative Example 1, but the purpose of suppressing the surface roughness of the Ge substrate was achieved.

In the cleaning method of the second, third, and fifth embodiments, the surface roughness of the Ge substrate can be suppressed in the completion of the cleaning after the chemical liquid which does not require the removal of the fine particles, and a high cleaning effect can be obtained.

In Reference Example 1 in which the Si substrate was cleaned, it was found that there was no problem that the surface of the substrate was rough, and the surface roughness was a problem unique to the Ge substrate.

The present invention has been described in detail with reference to the specific embodiments of the invention, and may be modified by those skilled in the art without departing from the scope of the invention.

The present application is based on Japanese Patent Application No. 2013-104250, filed on Jan.

1‧‧‧H ₂ O ₂ removal device

2‧‧‧ Degassing membrane module

3‧‧‧ gas dissolving membrane module

4‧‧‧cleaning machine

5‧‧‧Supersonic nozzle

6‧‧‧Ge substrate

7‧‧‧Rotary table

10‧‧‧Exhaust pump

11‧‧‧Water flow meter

12‧‧‧Gas flow adjustment mechanism

Claims (13)

A method for cleaning a Ge substrate for an element, comprising: cleaning a Ge substrate for a device with water obtained by removing dissolved oxygen. The method for cleaning a Ge substrate for an element according to the first aspect of the invention, wherein the Ge substrate for element cleaning is washed with water obtained by removing dissolved oxygen and hydrogen peroxide. The method for cleaning a Ge substrate for a device according to the first aspect of the invention, wherein the water used for the cleaning has a dissolved oxygen concentration of 50 μg/L or less and a H ₂ O ₂ concentration of 50 μg/L or less. The method for cleaning a Ge substrate for a device according to the first aspect of the invention, wherein the water used for the cleaning is a gas in which a non-oxidizing gas is dissolved. The method for cleaning a Ge substrate for a device according to the fourth aspect of the invention, wherein the non-oxidizing gas is at least one of hydrogen gas and nitrogen gas. The method for cleaning a Ge substrate for a device according to any one of claims 1 to 5, wherein the water used for the cleaning comprises a group selected from the group consisting of an acid, a base, a chelating agent, and a surfactant. At least one drug in the group. The method for cleaning a Ge substrate for a component according to the first aspect of the invention, wherein the ultrasonic cleaning, the high-pressure jet cleaning, or the two-fluid cleaning is performed. A cleaning water supply device for a Ge substrate for use in a device for supplying a cleaning water used for cleaning a component with a Ge substrate to a Ge substrate. The apparatus for cleaning a machine includes: a deaeration means for removing dissolved oxygen in the washing water; and means for supplying the water after the dissolved oxygen is removed by the deaeration means to the washing machine. A cleaning water supply device for a Ge substrate for a component according to the eighth aspect of the invention, further comprising a hydrogen peroxide removing means for removing hydrogen peroxide in the washing water, the hydrogen peroxide removing means and the degassing The water treated by the means is supplied to the aforementioned washing machine. A cleaning apparatus for a Ge substrate washing apparatus according to the eighth aspect of the invention, wherein the gas is dissolved in a gas to dissolve dissolved oxygen in the degassing means, and the gas is a gas. The water dissolved by the dissolution means is supplied to the above-described washing machine. The water supply device for a Ge substrate for a component according to the eighth aspect of the invention, wherein the water having the dissolved oxygen removed by the degassing means is added to be selected from the group consisting of an acid, a base, a chelating agent, and a surfactant. A method of adding medicines for one or two or more types of medicines in a group. A cleaning device for a Ge substrate, comprising: a cleaning water supply device for a Ge substrate for a component according to any one of claims 8 to 11; and a supply of a Ge substrate from the device A washing machine for washing water of the washing water supply device. A cleaning apparatus for a Ge substrate for an element according to claim 12, wherein the cleaning device is an ultrasonic cleaner, a high pressure jet cleaner, or a two-fluid cleaner.