KR20210044593A - Semiconductor resist composition, and method of forming patterns using the composition - Google Patents

Abstract

The present invention relates to a composition for a semiconductor photoresist which includes an organic metal compound represented by following chemical formula 1 and a solvent, and a method of forming patterns using the composition for a semiconductor photoresist (specific details for chemical formula 1 are as defined in the specification). One embodiment of the present invention provides a composition for a semiconductor photoresist which is excellent in storage stability and pattern formation.

Description

A composition for a semiconductor photoresist and a pattern formation method using the same {SEMICONDUCTOR RESIST COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION}

The present description relates to a composition for a semiconductor photoresist and a pattern forming method using the same.

As one of the element technologies for manufacturing next-generation semiconductor devices, EUV (extreme ultraviolet light) lithography is attracting attention. EUV lithography is a pattern forming technique using EUV light having a wavelength of 13.5 nm as an exposure light source. According to EUV lithography, it has been demonstrated that an extremely fine pattern (for example, 20 nm or less) can be formed in an exposure step of a semiconductor device manufacturing process.

Implementation of extreme ultraviolet (EUV) lithography requires the development of compatible photoresists capable of performing at spatial resolutions of 16 nm or less. Currently, traditional chemically amplified (CA) photoresists are the resolution, photospeed, and feature roughness (also called line edge roughness or LER) for next-generation devices. We are working to meet the specifications for

The inherent intrinsic image blur due to acid catalyzed reactions occurring in these polymeric photoresists limits the resolution at small feature sizes, which is the e-beam. It has been known for a long time in lithography. Chemically amplified (CA) photoresists are designed for high sensitivity, but because their typical elemental makeup lowers the absorbance of the photoresists at a wavelength of 13.5 nm, and consequently reduces the sensitivity, in part. It may be more difficult under EUV exposure.

CA photoresists can also suffer from roughness issues at small feature sizes and, in part due to the nature of acid catalytic processes, line edge roughness (LER) as the photospeed decreases. It has been shown by the experiment that is increasing. Due to the shortcomings and problems of CA photo resists, there is a need in the semiconductor industry for a new type of high performance photo resists.

In order to overcome the shortcomings of the above-described chemically amplified (CA) photosensitive composition, an inorganic photosensitive composition has been studied. In the case of an inorganic photosensitive composition, it is mainly used for negative tone patterning that is resistant to removal by a developer composition due to chemical modification by a non-chemical amplification mechanism. Inorganic compositions are known to contain inorganic elements with higher EUV absorption than hydrocarbons, so sensitivity can be secured even with a non-chemical amplification mechanism, and are less sensitive to the stochastic effect, so line edge roughness and number of defects are also known to be small. .

Recently, a cationic hafnium metal oxide sulfate (HfSOx) material was used together with a peroxo complexing agent to image a 15nm half-pitch (HP) by projection EUV exposure. , In this case, it showed impressive performance. However, in the case of a metal oxide-based inorganic resist having a peroxo complexing agent, handling is difficult, storage stability is poor, and structural changes to improve performance are difficult due to the use of a strong corrosive acid.

One embodiment provides a composition for a semiconductor photoresist excellent in storage stability and pattern formation.

Another embodiment provides a method of forming a pattern using the composition for a semiconductor photoresist.

The composition for a semiconductor photoresist according to an embodiment includes an organometallic compound represented by Formula 1 below and a solvent.

[Formula 1]

In Formula 1,

R ¹ is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, or a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof,

X ¹ to X ³ are each independently a single bond, a substituted or unsubstituted divalent C1 to C20 saturated aliphatic hydrocarbon group, a substituted or unsubstituted divalent C3 to C20 saturated alicyclic hydrocarbon group, at least one double bond or a triple bond A substituted or unsubstituted divalent C2 to C20 unsaturated aliphatic hydrocarbon group, a divalent substituted or unsubstituted C6 to C20 aromatic hydrocarbon group, or a combination thereof,

Y ¹ is C(-R ^a ) or nitrogen (N),

R ^a is hydrogen, a hydroxy group (-OH), or -OR ^b ,

R ^b is a substituted or unsubstituted monovalent C1 to C20 saturated aliphatic hydrocarbon group, a substituted or unsubstituted monovalent C3 to C20 saturated alicyclic hydrocarbon group, a substituted or unsubstituted 1 containing one or more double bonds or triple bonds A valent C2 to C20 unsaturated aliphatic hydrocarbon group, a monovalent substituted or unsubstituted C6 to C30 aromatic hydrocarbon group, or a combination thereof.

The R ¹ may be a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, or a substituted or unsubstituted C6 to C10 aryl group, or a combination thereof,

X ¹ to X ³ are each independently a single bond, a substituted or unsubstituted divalent C1 to C8 saturated aliphatic hydrocarbon group, a substituted or unsubstituted divalent C3 to C6 saturated alicyclic hydrocarbon group, or a double bond of 1 or 2 Or a substituted or unsubstituted divalent C2 to C8 unsaturated aliphatic hydrocarbon group including a triple bond, a divalent substituted or unsubstituted C6 to C10 arylene group, or a combination thereof,

Wherein R ^b is a substituted or unsubstituted monovalent C1 to C10 saturated aliphatic hydrocarbon group, a substituted or unsubstituted monovalent C3 to C10 saturated alicyclic hydrocarbon group, substituted or unsubstituted including 1 or 2 double bonds or triple bonds It may be a cyclic monovalent C2 to C10 unsaturated aliphatic hydrocarbon group, a monovalent substituted or unsubstituted C6 to C10 aromatic hydrocarbon group, or a combination thereof.

R ¹ is a methyl group, ethyl group, propyl group, butyl group, isopropyl group, tert-butyl group, 2,2-dimethylpropyl group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, phenyl group, tol It may be a reel group, a xylene group, a benzyl group, or a combination thereof,

X ¹ to X ³ are each independently a single bond, methylene group, ethylene group, propylene group, butylene group, cyclobutylene group, cyclopentylene group, cyclohexylene group, ethenylene group, propenylene group, ethynylene group, It may be a propynylene group, a phenylene group, or a combination thereof,

R ^b is a methyl group, ethyl group, propyl group, butyl group, isopropyl group, tert-butyl group, 2,2-dimethylpropyl group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, ethenyl group, It may be a propenyl group, a butenyl group, an ethynyl group, a propynyl group, a butynyl group, a phenyl group, a tolyl group, a xylene group, a benzyl group, or a combination thereof.

R ¹ may be any one of a methyl group, an ethyl group, a propyl group, an isopropyl group, a tert-butyl group, a phenyl group, and a benzyl group,

The X ¹ to X ³ may each independently be any one of a single bond, a methylene group, an ethylene group, a propylene group, and a butylene group,

The Y ¹ may be C(-R ^a ),

The R ^a may be hydrogen.

X ¹ is a methylene group,

X ² is a single bond,

X ³ may be any one of a single bond, a methylene group, an ethylene group, a propylene group, and a butylene group.

All of X ¹ to X ³ may be the same.

The composition for a semiconductor photoresist may include 1 to 20% by weight of the organometallic compound represented by Formula 1, based on the total weight of the composition.

The composition for a semiconductor photoresist may further include a surfactant, a crosslinking agent, a leveling agent, or an additive of a combination thereof.

A method of forming a pattern according to another embodiment may include forming a layer to be etched on a substrate;

Forming a photoresist film by applying the composition for a semiconductor photoresist according to any one of claims 1 to 11 on the etching target film;

Forming a photoresist pattern by patterning the photoresist layer; And

And etching the target layer to be etched using the photoresist pattern as an etching mask.

In forming the photoresist pattern, light having a wavelength of 5 nm to 150 nm may be used.

It may further include providing a resist underlayer film formed between the substrate and the photoresist film.

The photoresist pattern may have a width of 5 nm to 100 nm.

The composition for a semiconductor photoresist according to an embodiment has excellent storage stability and pattern formation characteristics, and by using this, it is possible to provide a photoresist pattern in which the pattern does not collapse even if it has a high aspect ratio.

1 to 5 are cross-sectional views illustrating a method of forming a pattern using a composition for a semiconductor photoresist according to an exemplary embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, in describing the present description, a description of a function or configuration that is already known will be omitted in order to clarify the gist of the present description.

In order to clearly describe the present description, parts irrelevant to the description have been omitted, and the same reference numerals are attached to the same or similar components throughout the specification. In addition, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, so the present description is not necessarily limited to the illustrated bar.

In the drawings, the thicknesses are enlarged in order to clearly express various layers and regions. In addition, in the drawings, the thickness of some layers and regions is exaggerated for convenience of description. When a part of a layer, film, region, plate, etc. is said to be "above" or "on" another part, this includes not only the case where the other part is "directly over" but also the case where there is another part in the middle.

In the present description, "substituted" means that the hydrogen atom is deuterium, halogen group, hydroxy group, cyano group, nitro group, -NRR' (wherein R and R'are each independently hydrogen, substituted or unsubstituted C1 to C30 saturated Or an unsaturated aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C30 saturated or unsaturated alicyclic hydrocarbon group, or a substituted or unsubstituted C6 to C30 aromatic hydrocarbon group), -SiRR'R” (here, R, R', And R” is each independently hydrogen, a substituted or unsubstituted C1 to C30 saturated or unsaturated aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C30 saturated or unsaturated alicyclic hydrocarbon group, or a substituted or unsubstituted C6 to C30 aromatic hydrocarbon group), C1 to C30 alkyl group, C1 to C10 haloalkyl group, C1 to C10 alkylsilyl group, C3 to C30 cycloalkyl group, C6 to C30 aryl group, C1 to C20 alkoxy group, or a combination thereof Means that. "Unsubstituted" means that a hydrogen atom remains a hydrogen atom without being substituted with another substituent.

In the present specification, "hetero", unless otherwise defined, means that one functional group contains 1 to 3 heteroatoms selected from the group consisting of N, O, S, and P, and the rest are carbon. .

In the present specification, "alkyl (alkyl) group" means a straight-chain or branched-chain aliphatic hydrocarbon group unless otherwise defined. The alkyl group may be a "saturated alkyl group" that does not contain any double bonds or triple bonds.

The alkyl group may be a C1 to C20 alkyl group. For example, the alkyl group may be a C1 to C10 alkyl group, a C1 to C8 alkyl group, a C1 to C6 alkyl group, or a C1 to C4 alkyl group. For example, the C1 to C4 alkyl group may be a methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, sec-butyl, or tert-butyl group.

In the present specification, the "saturated aliphatic hydrocarbon group" means a hydrocarbon group in which a bond between a carbon atom and a carbon atom in a molecule is a single bond unless otherwise defined.

The saturated aliphatic hydrocarbon group may be a C1 to C20 saturated aliphatic hydrocarbon group. For example, the saturated aliphatic hydrocarbon group may be a C1 to C10 saturated aliphatic hydrocarbon group, a C1 to C8 saturated aliphatic hydrocarbon group, a C1 to C6 saturated aliphatic hydrocarbon group, a C1 to C4 saturated aliphatic hydrocarbon group, and a C1 to C2 saturated aliphatic hydrocarbon group. For example, the C1 to C6 saturated aliphatic hydrocarbon group may be a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a 2,2-dimethylpropyl group, or a tert-butyl group. .

In the present specification, the "saturated alicyclic hydrocarbon group" refers to a hydrocarbon group including a ring in which a bond between a carbon atom and a carbon atom in a molecule is formed of a single bond.

The saturated alicyclic hydrocarbon group may be a C3 to C10 saturated alicyclic hydrocarbon group. For example, the saturated alicyclic hydrocarbon group may be a C3 to C8 saturated alicyclic hydrocarbon group, a C3 to C6 saturated alicyclic hydrocarbon group, a C3 to C5 saturated alicyclic hydrocarbon group, a C3 or C4 saturated alicyclic hydrocarbon group. For example, the C3 to C6 saturated alicyclic hydrocarbon group may be a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, or a cyclohexyl group.

In the present specification, the "unsaturated aliphatic hydrocarbon group" refers to a hydrocarbon group including a bond in which a bond between a carbon atom and a carbon atom in a molecule is a double bond, a triple bond, or a combination thereof.

The unsaturated aliphatic hydrocarbon group may be a C2 to C20 unsaturated aliphatic hydrocarbon group. For example, the unsaturated aliphatic hydrocarbon group may be a C2 to C10 unsaturated aliphatic hydrocarbon group, a C2 to C8 unsaturated aliphatic hydrocarbon group, a C2 to C6 unsaturated aliphatic hydrocarbon group, and a C2 to C4 unsaturated aliphatic hydrocarbon group. For example, a C2 to C4 unsaturated aliphatic hydrocarbon group is a vinyl group, ethynyl group, allyl group, 1-propenyl group, 2-propenyl group, 1-propynyl group, 2-propynyl group, 1-butenyl group, 2-bute It may be a nil group, a 3-butenyl group, a 1-butynyl group, a 2-butynyl group, and a 3-butynyl group.

In the present specification, the "unsaturated alicyclic hydrocarbon group" refers to a hydrocarbon group including a ring including a bond between carbon atoms that is a double bond or a triple bond.

The unsaturated alicyclic hydrocarbon group may be a C3 to C10 unsaturated alicyclic hydrocarbon group. For example, the unsaturated alicyclic hydrocarbon group may be a C3 to C8 unsaturated alicyclic hydrocarbon group, a C3 to C6 unsaturated alicyclic hydrocarbon group, a C3 to C5 unsaturated alicyclic hydrocarbon group, and a C3 or C4 unsaturated alicyclic hydrocarbon group. For example, a C3 to C6 unsaturated alicyclic hydrocarbon group is 1-cyclopropenyl group, 2-cyclopropenyl group, 1-cyclobutenyl group, 2-cyclobutenyl group, 1-cyclopentenyl group, 2-cyclopentenyl group, 3- It may be a cyclopentenyl group, a 1-cyclohexenyl group, a 2-cyclohexenyl group, or a 3-cyclohexenyl group.

In the present specification, the "aromatic hydrocarbon group" means a hydrocarbon group containing an aromatic ring group in the molecule.

The aromatic hydrocarbon group may be a C6 to C10 aromatic hydrocarbon group. For example, the aromatic hydrocarbon group may be a phenyl group or a naphthalene group.

In the present specification, the term “alkenyl group” refers to an aliphatic unsaturated alkenyl group containing one or more double bonds as a linear or branched aliphatic hydrocarbon group unless otherwise defined. do.

As used herein, the term "cycloalkyl group" means a monovalent cyclic aliphatic saturated hydrocarbon group unless otherwise defined.

In the present description, "aryl group" refers to a substituent in which all elements of a cyclic substituent have a p-orbital, and these p-orbitals form a conjugation, and are monocyclic or fused. It contains a ring polycyclic (i.e., a ring that shares adjacent pairs of carbon atoms) functional groups.

The composition for a semiconductor photoresist according to an embodiment of the present invention includes an organometallic compound and a solvent. The organometallic compound may be represented by the following formula (1).

[Formula 1]

In Formula 1,

R ¹ is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, or a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof,

X ¹ to X ³ are each independently a single bond, a substituted or unsubstituted divalent C1 to C20 saturated aliphatic hydrocarbon group, a substituted or unsubstituted divalent C3 to C20 saturated alicyclic hydrocarbon group, at least one double bond or a triple bond A substituted or unsubstituted divalent C2 to C20 unsaturated aliphatic hydrocarbon group, a divalent substituted or unsubstituted C6 to C20 aromatic hydrocarbon group, or a combination thereof,

Y ¹ is C(-R ^a ) or nitrogen (N),

R ^a is hydrogen, a hydroxy group (-OH), or -OR ^b ,

R ^b is a substituted or unsubstituted monovalent C1 to C20 saturated aliphatic hydrocarbon group, a substituted or unsubstituted monovalent C3 to C20 saturated alicyclic hydrocarbon group, a substituted or unsubstituted 1 containing one or more double bonds or triple bonds A valent C2 to C20 unsaturated aliphatic hydrocarbon group, a monovalent substituted or unsubstituted C6 to C30 aromatic hydrocarbon group, or a combination thereof.

The organometallic compound may include one homogeneous organometallic compound represented by Formula 1, or may include a mixture of two or more different organometallic compounds represented by Formula 1 above. Tin (Sn) contained in the organometallic compound represented by Chemical Formula 1 may strongly absorb extreme ultraviolet light at 13.5 nm, thereby exhibiting excellent sensitivity to light having high energy.

In the organometallic compound represented by Formula 1, three alkoxy groups and/or aryloxy groups are bonded to a tin (Sn) atom, and all of these alkoxy groups and/or aryloxy groups are ^{connected to one Y 1} , so that the compound as a whole is It is characterized by forming a ring structure. That is, the compound is an organometallic compound into which a trivalent alkoxy and/or aryloxy ligand is introduced, and since the trivalent alkoxy and/or aryloxy ligand is bonded to a tin metal, solubility in an organic solvent may be excellent.

In addition, as all three alkoxy groups and/or aryloxy groups are ^{connected to Y 1} to form a ring structure, the alkoxy group and/or aryloxy group can prevent moisture from penetrating into the ring, and as a result, the ring structure is Since tin (Sn) plays a role of preventing moisture from contacting, the composition for a semiconductor photoresist including the compound may have excellent stability against moisture, that is, storage stability.

The R ¹ may be a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, or a substituted or unsubstituted C6 to C10 aryl group, or a combination thereof, specifically, a methyl group , Ethyl group, propyl group, butyl group, isopropyl group, tert-butyl group, 2,2-dimethylpropyl group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, phenyl group, tolyl group, xylene group, It may be a benzyl group, or a combination thereof, and more specifically, it may be any one of a methyl group, an ethyl group, a propyl group, an isopropyl group, a tert-butyl group, a phenyl group, and a benzyl group.

The R ¹ is combined with a tin (Sn) element to impart solubility of the organometallic compound in an organic solvent. In addition, the organotin polymer formed by polymerization of the organometallic compound represented by Formula 1 generates radicals as the R ^{1 functional group is dissociated from the Sn-R 1 bond when exposed to extreme ultraviolet rays,} The radicals generated as described above form -Sn-O-Sn- bonds through an additional radical reaction to initiate a condensation polymerization reaction between organotin polymers, thereby forming a semiconductor photoresist from the composition according to an embodiment. Thus, semiconductor photo resist composition comprising an organic tin compound containing the R ¹ functional group is the sensitivity to light than a composition for semiconductor photoresist comprises an organic tin compound which does not include the R ¹ functional groups to more excellent have.

X ¹ to X ³ are each independently a single bond, a substituted or unsubstituted divalent C1 to C8 saturated aliphatic hydrocarbon group, a substituted or unsubstituted divalent C3 to C6 saturated alicyclic hydrocarbon group, or a double bond of 1 or 2 Or a substituted or unsubstituted divalent C2 to C8 unsaturated aliphatic hydrocarbon group including a triple bond, a divalent substituted or unsubstituted C6 to C10 arylene group, or a combination thereof, specifically, each independently a single bond , Methylene group, ethylene group, propylene group, butylene group, cyclobutylene group, cyclopentylene group, cyclohexylene group, ethenylene group, propenylene group, ethynylene group, propynylene group, phenylene group, or combinations thereof May be, and more specifically, each independently may be any one of a single bond, a methylene group, an ethylene group, a propylene group, and a butylene group.

The X ¹ to X ³ are linking groups that allow three alkoxy groups in the molecule to be connected to ^{one Y 1,} and the organometallic compound represented by Formula 1 according to the number of carbon atoms contained in ^{the X 1} to X ³ The length of the chain in the ring structure can be determined. Therefore, as the ^{number of carbons contained in X 1} to X ³ increases, the size of the molecule of the organometallic compound represented by Chemical Formula 1 increases. In this case, when the number of carbons contained in ^{X 1} to X ^{3 increases} , For example, when the number of carbon atoms is more than 20, the moisture blocking effect of the alkoxy group and carbon chain in the molecule of the organometallic compound represented by Formula 1 may be reduced, and as a result, represented by Formula 1 Moisture stability, that is, storage stability characteristics of the composition for a semiconductor photoresist including an organometallic compound may be deteriorated. In addition, when the volume of the organometallic compound represented by Chemical Formula 1 becomes too large due to the large number of carbons contained in ^{X 1} to X ^{3, there is a concern that the characteristics of line roughness (LER) in pattern formation may also be deteriorated.}

^{In one embodiment, X 1} of the organometallic compound represented by Formula 1 is a methylene group, X ² is a single bond, and X ³ is a single bond, a methylene group, an ethylene group, a propylene group, and a butylene group. It may be any one of, and ^{all of X 1} to X ³ may be the same.

In an embodiment, in the organometallic compound represented by Formula 1, ^{all of X 1} to X ³ may not be a single bond. That is, in the organometallic compound represented by Formula 1, ^{one or two of X 1} to X ³ may be a single bond, and the rest may be one of the groups listed above, not a single bond.

R ^b is a substituted or unsubstituted monovalent C1 to C10 saturated aliphatic hydrocarbon group, a substituted or unsubstituted monovalent C3 to C10 saturated alicyclic hydrocarbon group, substituted or unsubstituted including one or two double bonds or triple bonds A monovalent C2 to C10 unsaturated aliphatic hydrocarbon group, a monovalent substituted or unsubstituted C6 to C10 aromatic hydrocarbon group, or a combination thereof, specifically, a methyl group, an ethyl group, a propyl group, a butyl group, an isopropyl group, tert-butyl group, 2,2-dimethylpropyl group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, ethenyl group, propenyl group, butenyl group, ethynyl group, propynyl group, butynyl group, phenyl group, It may be a tolyl group, a xylene group, a benzyl group, or a combination thereof.

Meanwhile, the organometallic compound may be represented by Formula 2 below.

[Formula 2]

In Chemical Formula 2,

R ¹ is any one of a methyl group, an ethyl group, a propyl group, an isopropyl group, a tert-butyl group, a phenyl group, and a benzyl group,

X ³ is any one of a single bond, a methylene group, an ethylene group, a propylene group, and a butylene group.

Specifically, the organometallic compound according to an embodiment may be represented by any one of Formulas 3 to 8 below.

[Formula 3]

[Formula 4]

[Formula 5]

[Formula 6]

[Formula 7]

[Formula 8]

The composition for a semiconductor photoresist contains 1 to 20% by weight, for example, 1 to 19% by weight, for example, 1 to 18% by weight of the organometallic compound represented by Formula 1, based on the total weight of the composition. %, for example 1 to 17% by weight, for example 1 to 16% by weight, for example 1 to 15% by weight, for example 1 to 14% by weight, for example 1 to 13% by weight %, for example 1 to 12% by weight, for example 1 to 11% by weight, for example 1 to 10% by weight, for example 1 to 8% by weight, for example 1 to 6% by weight %, for example, 1 to 5% by weight, for example, 1 to 3% by weight. When the composition for a semiconductor photoresist contains the organometallic compound represented by Formula 1 in the weight% range, moisture stability, that is, storage stability, of the composition for semiconductor photoresist may be further improved.

The solvent included in the composition for a semiconductor photoresist according to an embodiment may be an organic solvent, for example, aromatic compounds (eg, xylene, toluene), alcohols (eg, 4-methyl-2- Pentanol, 4-methyl-2-propanol, 1-butanol, methanol, isopropyl alcohol, 1-propanol), ethers (e.g., anisole, tetrahydrofuran), esters (n-butyl acetate, propylene Glycol monomethyl ether acetate, ethyl acetate, ethyl lactate), ketones (eg, methyl ethyl ketone, 2-heptanone), mixtures thereof, and the like, but are not limited thereto.

In one embodiment, the semiconductor resist composition may further include a resin in addition to the organometallic compound and the solvent described above.

The resin may be a phenolic resin including at least one aromatic moiety listed in Group 1 below.

[Group 1]

The resin may have a weight average molecular weight of 500 to 20,000.

The resin may be included in an amount of 0.1% to 50% by weight based on the total content of the semiconductor resist composition.

When the resin is contained in the above content range, it may have excellent etch resistance and heat resistance.

On the other hand, the composition for a semiconductor resist according to an embodiment is preferably made of the aforementioned organometallic compound, a solvent, and a resin. However, the composition for a semiconductor resist according to the above-described embodiment may further include an additive in some cases. Examples of the additives include surfactants, crosslinking agents, leveling agents, or combinations thereof.

The surfactant may be, for example, an alkylbenzenesulfonic acid salt, an alkylpyridinium salt, polyethylene glycol, a quaternary ammonium salt, or a combination thereof, but is not limited thereto.

The crosslinking agent may be a melamine-based crosslinking agent, a substituted urea crosslinking agent, or a polymer-based crosslinking agent, but is not limited thereto. A crosslinking agent having at least two crosslinking substituents, for example, methoxymethylated glycoruryl, butoxymethylated glycoruryl, methoxymethylated melamine, butoxymethylated melamine, methoxymethylated benzoguanamine, butoxymethylated benzoguanamine , Methoxymethylated urea, butoxymethylated urea, or methoxymethylated thiourea may be used.

The leveling agent is for improving coating flatness during printing, and a known leveling agent available in a commercial manner may be used.

The amount of these additives used may be easily adjusted according to desired physical properties, or may be omitted.

In addition, the semiconductor resist composition may further use a silane coupling agent as an additive as an adhesion promoter to improve adhesion to the substrate (for example, to improve the adhesion of the semiconductor resist composition to the substrate). The silane coupling agent is, for example, vinyl trimethoxysilane, vinyl triethoxysilane, vinyl trichlorosilane, vinyl tris (β-methoxyethoxy) silane; Or 3-methacryloxypropyltrimethoxysilane, 3-acryloxypropyltrimethoxysilane, p-styryl trimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropylmethyldi Ethoxysilane; A silane compound containing a carbon-carbon unsaturated bond such as trimethoxy[3-(phenylamino)propyl]silane may be used, but is not limited thereto.

The semiconductor resist composition may significantly reduce the risk of pattern collapse or pattern collapse even when a pattern having a high aspect ratio is formed. Thus, for example, a fine pattern having a width of 5 nm to 100 nm, for example, a fine pattern having a width of 5 nm to 80 nm, for example, a fine pattern having a width of 5 nm to 70 nm, For example, a fine pattern having a width of 5 nm to 50 nm, for example, a fine pattern having a width of 5 nm to 40 nm, for example, a fine pattern having a width of 5 nm to 30 nm, for example For example, in order to form a fine pattern having a width of 5 nm to 20 nm, a photoresist process using light of a wavelength of 5 nm to 150 nm, for example, a photoresist using light of a wavelength of 5 nm to 100 nm Process, e.g., photoresist process using light with a wavelength of 5 nm to 80 nm, e.g., photoresist process using light with a wavelength of 5 nm to 50 nm, e.g. with a wavelength of 5 nm to 30 nm It can be used in a photoresist process using light of, for example, a photoresist process using light having a wavelength of 5 nm to 20 nm. Therefore, if the composition for a semiconductor resist according to an embodiment is used, extreme ultraviolet lithography using an EUV light source having a wavelength of about 13.5 nm can be implemented.

Meanwhile, according to another embodiment, a method of forming a pattern using the above-described composition for a semiconductor resist may be provided. For example, the manufactured pattern may be a photoresist pattern.

In one embodiment, another pattern formation method includes forming an etching target layer on a substrate, forming a photoresist layer by applying the above-described semiconductor resist composition on the etching target layer, and patterning the photoresist layer to form a photoresist pattern. And etching the etching target layer using the photoresist pattern as an etching mask.

Hereinafter, a method of forming a pattern using the above-described composition for a semiconductor resist will be described with reference to FIGS. 1 to 5. 1 to 5 are cross-sectional views illustrating a method of forming a pattern using a composition for a semiconductor resist according to the present invention.

Referring to FIG. 1, first, an object to be etched is prepared. An example of the object to be etched may be a thin film 102 formed on the semiconductor substrate 100. Hereinafter, only the case where the object to be etched is the thin film 102 will be described. The surface of the thin film 102 is cleaned to remove contaminants and the like remaining on the thin film 102. The thin film 102 may be, for example, a silicon nitride film, a polysilicon film, or a silicon oxide film.

Subsequently, a composition for forming a resist underlayer film for forming the resist underlayer film 104 on the cleaned surface of the thin film 102 is coated by applying a spin coating method. However, one embodiment is not necessarily limited thereto, and various known coating methods, such as spray coating, dip coating, knife edge coating, printing methods, such as inkjet printing and screen printing, may be used.

The resist underlayer coating process may be omitted. Hereinafter, a case of coating the resist underlayer layer will be described.

Thereafter, drying and baking processes are performed to form a resist underlayer 104 on the thin film 102. The baking treatment may be performed at about 100° C. to about 500° C., and for example, at about 100° C. to about 300° C.

The resist underlayer film 104 is formed between the substrate 100 and the photoresist film 106, so that irradiation rays reflected from the interface between the substrate 100 and the photoresist film 106 or an interlayer hardmask are not intended. In the case of scattering into the uneven photoresist region, it is possible to prevent unevenness of the photoresist linewidth and disturbance of pattern formation.

Referring to FIG. 2, a photoresist film 106 is formed by coating the above-described semiconductor resist composition on the resist underlayer 104. The photoresist film 106 may be in a form obtained by coating the above-described semiconductor resist composition on the thin film 102 formed on the substrate 100 and then curing through a heat treatment process.

More specifically, the step of forming a pattern using the composition for semiconductor resist is a process of applying the above-described composition for semiconductor resist on the substrate 100 on which the thin film 102 is formed by spin coating, slit coating, inkjet printing, etc. And drying the applied semiconductor resist composition to form the photoresist film 106.

Since the semiconductor resist composition has already been described in detail, redundant descriptions will be omitted.

Subsequently, a first baking process of heating the substrate 100 on which the photoresist film 106 is formed is performed. The first baking process may be performed at a temperature of about 80° C. to about 120° C.

3, the photoresist film 106 is selectively exposed.

For example, examples of light that can be used in the exposure process include light having a short wavelength such as an activated irradiation i-line (wavelength 365 nm), a KrF excimer laser (wavelength 248 nm), an ArF excimer laser (wavelength 193 nm), as well as EUV ( Extreme UltraViolet; wavelength 13.5 nm), E-Beam (electron beam) and other high-energy wavelength light.

More specifically, the exposure light according to an embodiment may be a short wavelength light having a wavelength range of 5 nm to 150 nm, and a light having a high energy wavelength such as EUV (Extreme UltraViolet; wavelength 13.5 nm), E-Beam (electron beam), etc. I can.

The exposed region 106a of the photoresist film 106 has a different solubility than the unexposed region 106b of the photoresist film 106 as a polymer is formed by a crosslinking reaction such as condensation between organometallic compounds. .

Subsequently, a second baking process is performed on the substrate 100. The second baking process may be performed at a temperature of about 90° C. to about 200° C. By performing the second baking process, the exposed region 106a of the photoresist film 106 becomes difficult to dissolve in the developer.

4 shows a photoresist pattern 108 formed by dissolving and removing the photoresist film 106b corresponding to the unexposed area using a developer. Specifically, by dissolving and removing the photoresist film 106b corresponding to the unexposed region using an organic solvent such as 2-heptanone, the photoresist pattern corresponding to the negative tone image ( 108) is completed.

As described above, the developer used in the pattern formation method according to the exemplary embodiment may be an organic solvent. As an example of an organic solvent used in the pattern formation method according to an embodiment, ketones such as methyl ethyl ketone, acetone, cyclohexanone, and 2-haptanone, 4-methyl-2-propanol, 1-butanol, isopropanol, Alcohols such as 1-propanol and methanol, propylene glycol monomethyl ester acetate, ethyl acetate, ethyl lactate, n-butyl acetate, esters such as butyrolactone, aromatic compounds such as benzene, xylene, toluene, or these A combination of is mentioned.

However, the photoresist pattern according to the exemplary embodiment is not necessarily limited to being formed as a negative tone image, and may be formed to have a positive tone image. In this case, as a developer that can be used to form a positive tone image, a quaternary ammonium hydroxide composition such as tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, or a combination thereof, etc. Can be lifted.

As described above, not only light having wavelengths such as i-line (wavelength 365 nm), KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm), but also EUV (Extreme UltraViolet; wavelength 13.5 nm), The photoresist pattern 108 formed by exposure to light having high energy such as an E-Beam (electron beam) or the like may have a width of 5 nm to 100 nm. For example, the photoresist pattern 108, 5 nm to 90 nm, 5 nm to 80 nm, 5 nm to 70 nm, 5 nm to 60 nm, 10 nm to 50 nm, 10 nm to 40 nm, 10 nm It may be formed in a width of 30 nm, 10 nm to 20 nm thick.

On the other hand, the photoresist pattern 108 has a half-pitch of about 50 nm or less, such as 40 nm or less, such as 30 nm or less, such as 25 nm or less, and about 10 nm or less, It may have a pitch having a line width roughness of about 5 nm or less.

Subsequently, the resist underlayer 104 is etched using the photoresist pattern 108 as an etching mask. The organic layer pattern 112 is formed by the above etching process. The formed organic layer pattern 112 may also have a width corresponding to the photoresist pattern 108.

Referring to FIG. 5, the exposed thin film 102 is etched by applying the photoresist pattern 108 as an etching mask. As a result, the thin film is formed as a thin film pattern 114.

The thin film 102 may be etched by dry etching using, for example, an etching gas, and the etching gas may be CHF ₃ , CF ₄ , Cl ₂ , BCl _3, and a mixed gas thereof.

In the exposure process performed above, the thin film pattern 114 formed using the photoresist pattern 108 formed by the exposure process performed using an EUV light source may have a width corresponding to the photoresist pattern 108. . For example, the photoresist pattern 108 may have a width of 5 nm to 100 nm, the same as the photoresist pattern 108. For example, the thin film pattern 114 formed by the exposure process performed using an EUV light source is 5 nm to 90 nm, 5 nm to 80 nm, 5 nm to 70 nm, 5 It may have a width of nm to 60 nm, 10 nm to 50 nm, 10 nm to 40 nm, 10 nm to 30 nm, 10 nm to 20 nm, and more specifically, may be formed to a width of 20 nm or less.

Hereinafter, the present invention will be described in more detail through examples of the preparation of the composition for a semiconductor photoresist described above. However, the technical features of the present invention are not limited by the following examples.

Manufacture of organometallic compounds

Synthesis Example 1: Synthesis of a compound represented by Formula 3

In a 100 ml round-bottom flask, nBuSnCl ₃ (8.5 g, 30 mmol) and 30 ml of toluene were added to dissolve, and triethylamine (9.4 g, 93 mmol) and glycerol were dissolved at 0°C. (2.8g, 30mmol) is slowly added in sequence, respectively. After stirring at room temperature for 12 hours, the resulting salt was removed by a filter and the filtrate was concentrated and the solvent was completely removed by vacuum distillation to obtain a compound represented by the following formula (3) in a yield of 72%.

[Formula 3]

Synthesis Example 2: Synthesis of a compound represented by Formula 4

Except for using iPrSnCl ₃ instead of nBuSnCl ₃ in Synthesis Example 1, synthesis was performed in the same manner as in Synthesis Example 1 to obtain a compound represented by Formula 4 in 68% yield.

[Formula 4]

Synthesis Example 3: Synthesis of a compound represented by Chemical Formula 5

_{TBuSn(NEt 2} ) ₃ (11.8g, 30 mmol) and 40 ml of toluene were added to a 100 ml round bottom flask to dissolve, and glycerol (2.8 g, 30 mmol) was slowly added under the conditions of 0°C. do. After stirring at room temperature for 12 hours, the solvent is completely removed by vacuum distillation to obtain a compound represented by the following formula (5) in 83% yield.

[Formula 5]

Synthesis Example 4: Synthesis of a compound represented by Formula 6

Except for using BnSnCl ₃ instead of nBuSnCl ₃ in Synthesis Example 1, synthesis was performed in the same manner as in Synthesis Example 1 to obtain a compound represented by Formula 6 below in 87% yield.

[Formula 6]

Synthesis Example 5: Synthesis of a compound represented by Chemical Formula 7

In Synthesis Example 1, _{except for using BnSnCl 3} instead of nBuSnCl ₃ and 1,2,4-butantriol instead of glycerol, the compound was synthesized in the same manner as in Synthesis Example 1 to obtain a compound represented by the following formula (7) in 80% yield.

[Formula 7]

Synthesis Example 6: Synthesis of a compound represented by Formula 8

In Synthesis Example 1, _{except for using BnSnCl 3} instead of nBuSnCl ₃ and 1,2,6-hexanetriol instead of glycerol, it was synthesized in the same manner as in Synthesis Example 1 to obtain a compound represented by Chemical Formula 8 in 78% yield.

[Formula 8]

Comparative Synthesis Example 1: Synthesis of a compound represented by Formula 9

nBuSnCl ₃ (8.5 g, 30 mmol) was dissolved in anhydrous pentane and the temperature was lowered to 0°C. Thereafter, triethylamine (10.0 g, 99 mmol) was slowly added dropwise, ethanol (4.2 g, 90 mmol) was added, and the mixture was stirred at room temperature for 5 hours. When the reaction is complete, it is filtered, concentrated, and dried in vacuo to obtain a compound represented by the following formula (9) in 40% yield.

[Formula 9]

Comparative Synthesis Example 2: Synthesis of a compound represented by Formula 10

Comparative nBuSnCl ₃ instead of the synthesis in the same manner as in Comparative Synthesis Example 1 except that there was used the iPrSnCl ₃ in Synthesis Example 1 to obtain a compound represented by the formula (10) in 63% yield.

[Formula 10]

Comparative Synthesis Example 3: Synthesis of a compound represented by Formula 11

Dissolve tBuSn(NEt ₂ ) ₃ (8.5g, 30 mmol) in anhydrous pentane and lower the temperature to 0°C. Then, ethanol (4.2g, 90 mmol) was slowly added dropwise and stirred at room temperature for 10 hours. When the reaction is complete, the mixture is concentrated and dried in vacuo to obtain a compound represented by the following formula (11) in a yield of 60%.

[Formula 11]

Comparative Synthesis Example 4: Synthesis of a compound represented by Formula 12

Except for using BnSnCl ₃ instead of nBuSnCl ₃ in Comparative Synthesis Example 1, synthesis was performed in the same manner as in Comparative Synthesis Example 1 to obtain a compound represented by the following Formula 12 in 61% yield.

[Formula 12]

Examples 1 to 6: Preparation of photoresist composition and photoresist film formation

The compounds of Chemical Formulas 3 to 8 obtained in Synthesis Examples 1 to 6 were dissolved in xylene at a concentration of 3 wt%, respectively, and filtered through a 0.1 μm PTFE syringe filter to prepare the photoresist compositions according to Examples 1 to 6 To manufacture.

A circular silicon wafer with a diameter of 4 inches having a native-oxide surface was used as a substrate for thin film deposition, and the substrate was pretreated for 10 minutes under a UV ozone cleaning system. Thereafter, the prepared semiconductor photoresist composition according to Examples 1 to 6 was spin-coated on the pre-treated substrate at 1,500 rpm for 30 seconds, and fired on a hot plate at 100° C. for 120 seconds (fired after application, Post-apply bake, PAB) to form a thin film.

The thickness of the film after coating and baking was measured by ellipsometry, and the measured thickness was about 24 nm.

Comparative Examples 1 to 4: Preparation of a composition for photoresist and formation of a photoresist film

After dissolving the compounds of Chemical Formulas 9 to 12 synthesized in Comparative Synthesis Examples 1 to 4 at a concentration of 3 wt% in xylene, filtered through a 0.1 μm PTFE syringe filter, and Comparative Examples 1 to 4 To prepare a composition for a semiconductor resist according to.

Thereafter, a thin film is formed on the substrate through the same process as in the above-described Example with respect to the prepared compositions for semiconductor resists according to Comparative Examples 1 to 4.

After coating and baking, the thickness of the film was measured by ellipsometry, and the measured thickness was about 23 nm.

(evaluation)

Evaluation 1: Storage stability evaluation

For the compositions for semiconductor photoresists prepared in Examples 1 to 6 and Comparative Examples 1 to 4, storage stability was evaluated based on the following criteria, and is shown in Table 1 below.

[Storage stability]

When the compositions for semiconductor photoresists according to Examples 1 to 6 and Comparative Examples 1 to 4 are left at room temperature (0° C. to 30° C.) for a specific period of time, the degree of precipitation is observed with the naked eye. It was evaluated in two stages according to the archival criteria.

-○: Can be stored for more than 1 month

= X: Can be stored for less than 2 weeks

Evaluation 2: Evaluation of pattern formation

A wafer was prepared by the same process as in the above example with the composition for a semiconductor photoresist according to Examples 1 to 6 and Comparative Examples 1 to 4, and it was used as an extreme ultraviolet ray with a spacing pattern of 18 nm line and 36 nm pitch. (Extreme ultraviolet radiation) exposure. The equipment used at this time is Lawrence Berkeley National Laboratory Micro Exposure Tool, MET 3, and uses 13.5nm wavelength radiation, dipole illumination, and a numerical aperture of 0.3. Thereafter, the resist and the substrate are exposed on a hotplate at 160° C. for 120 seconds and then baked (post-exposure bake, PEB). The fired film is immersed in a developer (2-heptanone) for 30 seconds each, and then washed for an additional 10 seconds with the same developer to form a negative tone image, that is, to remove the unexposed coated portion. Finally, the process is terminated by performing hotplate firing at 150° C. for 120 seconds. As a result of SEM measurement of the developed resist film, an 18 nm line image on a 36 nm pitch was confirmed.

[Limited Resolution]

-A: 18 nm or less

-B: more than 18 nm

[Line roughness]

-A: 2.5 nm or less

-B: more than 2.5 nm

Storage stability Limit resolution Line roughness Example 1 ○ A A Example 2 ○ A A Example 3 ○ A A Example 4 ○ A A Example 5 ○ A A Example 6 ○ A A Comparative Example 1 X B B Comparative Example 2 X A B Comparative Example 3 X A B Comparative Example 4 X B B

Referring to Table 1, it can be seen that the compositions for semiconductor photoresists according to Examples 1 to 6 have better storage stability than the compositions for semiconductor photoresists according to Comparative Examples 1 to 4.

Referring to Table 1, the compositions for semiconductor photoresists according to Examples 1 to 6 showed a result value of 18 nm or less for all of the limiting resolutions, so that the pattern formation property was excellent, whereas the semiconductors according to Comparative Examples 1 and 4 It can be seen that the photoresist composition exhibits a result value of more than 18 nm of the limit resolution, and thus does not have excellent pattern formation.

In addition, the composition for a semiconductor photoresist according to Examples 1 to 6 showed excellent pattern formation properties as all of the line lacquers showed a result value of 2.5 nm or less, whereas the composition for a semiconductor photoresist according to Comparative Examples 1 to 4 It can be seen that all of the silver line roughness exceeded 2.5 nm, indicating that the pattern formation is not excellent.

In the above, although specific embodiments of the present invention have been described and illustrated, the present invention is not limited to the described embodiments, and various modifications and variations can be made without departing from the spirit and scope of the present invention. It is self-evident to those who have knowledge. Therefore, such modifications or variations should not be individually understood from the technical spirit or point of view of the present invention, and the modified embodiments should be said to belong to the claims of the present invention.

100: substrate 102: thin film
104: photoresist underlayer film 106: photoresist film
106a: exposed area 106b: unexposed area
108: photoresist pattern 112: organic film pattern
114: thin film pattern
108: photoresist pattern 112: organic film pattern
114: thin film pattern

Claims (12)

A composition for a semiconductor photoresist comprising an organometallic compound represented by the following Formula 1 and a solvent:
[Formula 1]

In Formula 1,
R ¹ is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, or a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof,
X ¹ to X ³ are each independently a single bond, a substituted or unsubstituted divalent C1 to C20 saturated aliphatic hydrocarbon group, a substituted or unsubstituted divalent C3 to C20 saturated alicyclic hydrocarbon group, at least one double bond or a triple bond A substituted or unsubstituted divalent C2 to C20 unsaturated aliphatic hydrocarbon group, a divalent substituted or unsubstituted C6 to C20 aromatic hydrocarbon group, or a combination thereof,
Y ¹ is C(-R ^a ) or nitrogen (N),
R ^a is hydrogen, a hydroxy group (-OH), or -OR ^b ,
R ^b is a substituted or unsubstituted monovalent C1 to C20 saturated aliphatic hydrocarbon group, a substituted or unsubstituted monovalent C3 to C20 saturated alicyclic hydrocarbon group, a substituted or unsubstituted 1 containing one or more double bonds or triple bonds A valent C2 to C20 unsaturated aliphatic hydrocarbon group, a monovalent substituted or unsubstituted C6 to C30 aromatic hydrocarbon group, or a combination thereof.
In claim 1,
R ¹ is a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, or a substituted or unsubstituted C6 to C10 aryl group, or a combination thereof,
X ¹ to X ³ are each independently a single bond, a substituted or unsubstituted divalent C1 to C8 saturated aliphatic hydrocarbon group, a substituted or unsubstituted divalent C3 to C6 saturated alicyclic hydrocarbon group, 1 or 2 double bonds, or A substituted or unsubstituted divalent C2 to C8 unsaturated aliphatic hydrocarbon group including a triple bond, a divalent substituted or unsubstituted C6 to C10 arylene group, or a combination thereof,
R ^b is a substituted or unsubstituted monovalent C1 to C10 saturated aliphatic hydrocarbon group, a substituted or unsubstituted monovalent C3 to C10 saturated alicyclic hydrocarbon group, substituted or unsubstituted including one or two double bonds or triple bonds A composition for a semiconductor photoresist which is a monovalent C2 to C10 unsaturated aliphatic hydrocarbon group, a monovalent substituted or unsubstituted C6 to C10 aromatic hydrocarbon group, or a combination thereof.
In claim 1,
R ¹ is a methyl group, ethyl group, propyl group, butyl group, isopropyl group, tert-butyl group, 2,2-dimethylpropyl group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, phenyl group, tolyl group , Xylene group, benzyl group, or a combination thereof,
X ¹ to X ³ are each independently a single bond, methylene group, ethylene group, propylene group, butylene group, cyclobutylene group, cyclopentylene group, cyclohexylene group, ethenylene group, propenylene group, ethynylene group, pro It is a pyylene group, a phenylene group, or a combination thereof,
R ^b is a methyl group, ethyl group, propyl group, butyl group, isopropyl group, tert-butyl group, 2,2-dimethylpropyl group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, ethenyl group, pro A composition for a semiconductor photoresist comprising a phenyl group, a butenyl group, an ethynyl group, a propynyl group, a butynyl group, a phenyl group, a tolyl group, a xylene group, a benzyl group, or a combination thereof.
In claim 1,
R ¹ is any one of a methyl group, an ethyl group, a propyl group, an isopropyl group, a tert-butyl group, a phenyl group, and a benzyl group,
X ¹ to X ³ are each independently a single bond, a methylene group, an ethylene group, a propylene group, and any one of a butylene group,
Y ¹ is C(-R ^a ),
R ^a is hydrogen, a composition for a semiconductor photoresist.
In claim 1,
X ¹ is a methylene group,
X ² is a single bond,
X ³ is a single bond, a methylene group, an ethylene group, a propylene group, and a composition for a semiconductor photoresist in any one of butylene group.
In claim 1,
All of the X ¹ to X ³ are the same composition for a semiconductor photoresist.
The composition for a semiconductor photoresist of claim 1, comprising 1 to 20% by weight of the organometallic compound represented by Formula 1, based on the total weight of the composition for a semiconductor photoresist.
The composition for a semiconductor photoresist according to claim 1, wherein the composition for a semiconductor photoresist further comprises an additive of a surfactant, a crosslinking agent, a leveling agent, or a combination thereof.
Forming a layer to be etched on the substrate;
Forming a photoresist film by applying the composition for a semiconductor photoresist according to any one of claims 1 to 8 on the etching target film;
Forming a photoresist pattern by patterning the photoresist layer; And
And etching the target layer to be etched using the photoresist pattern as an etching mask.
The method of claim 9, wherein the forming of the photoresist pattern uses light having a wavelength of 5 nm to 150 nm.
In claim 9,
The method of forming a pattern further comprising the step of providing a resist underlayer film formed between the substrate and the photoresist film.
In claim 9,
The photoresist pattern is a pattern forming method having a width of 5 nm to 100 nm.

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