KR20210001372A - Composition for encapsulating semiconductor device and film for encapsulating semiconductor device - Google Patents

Abstract

Disclosed are: a composition for encapsulating a semiconductor device, comprising at least one of a butadiene-based compound, a nitrogen-containing vinyl-based monomer, an initiator, a polystyrene-based binder and a polyolefin-based binder, and 30 to 90 wt% of silica; and a film for semiconductor device encapsulation.

Description

A composition for sealing a semiconductor device and a film for sealing a semiconductor device TECHNICAL FIELD {COMPOSITION FOR ENCAPSULATING SEMICONDUCTOR DEVICE AND FILM FOR ENCAPSULATING SEMICONDUCTOR DEVICE}

It relates to a composition for sealing a semiconductor device and a film for sealing a semiconductor device, and more particularly, to a composition for sealing a semiconductor device and a film for sealing a semiconductor device having improved dielectric properties and adhesive properties.

Semiconductor packaging is a technology that mounts a semiconductor chip so that it can operate as an electrical and electronic component. It supplies power required for semiconductor devices, connects signals between semiconductor devices, and releases heat generated from semiconductor devices. It serves to protect the device from changes in the thermal environment. In recent years, with the rapid increase in the amount of communication information, miniaturization, weight reduction, and high-speed increase in telecommunication devices are in progress, and a material having a low dielectric constant and low dielectric loss tangent that can cope with this is required.

In the case of a conventional semiconductor sealing material, since it is manufactured using an epoxy resin having a high dielectric constant of usually 3.5 to 4.5, there is a problem in that the dielectric constant and the dissipation factor of the sealing material are high.

Meanwhile, when semiconductor packaging is performed, a wiring with the outside of the package may be formed on the mold material through a redistribution dielectric layer (RDL). In this case, delamination should not occur between the plated copper layer and the mold layer to form the RDL wiring. If the adhesion to the copper plating is low, the mechanical reliability of the package substrate is degraded, and further, a heat treatment process (plating annealing , RDL curing, soldering process, etc.), there is a problem that the package itself becomes difficult when the mold layer and the plating layer are peeled off.

An object of the present invention is to provide a semiconductor device sealing composition and a semiconductor device sealing film with improved dielectric properties.

Another object of the present invention is to provide a semiconductor device sealing composition and a semiconductor device sealing film excellent in adhesion to the plating layer.

1. According to one aspect, there is provided a composition for sealing a semiconductor device comprising at least one of a butadiene-based compound, a nitrogen-containing vinyl-based monomer, an initiator, a polystyrene-based binder, and a polyolefin-based binder, and 30 to 90% by weight of silica .

2. In 1 above, the butadiene-based compound may include at least one of polybutadiene, maleic anhydride grafted polybutadiene, and styrene-butadiene copolymer.

3. In 1 or 2 above, the nitrogen-containing vinyl-based monomer may be represented by the following Formula 1:

<Formula 1>

In Formula 1,

Ring A is a C ₁ -C ₃₀ aromatic heterocyclic group having at least one *-N=*' moiety,

R is selected from a C ₁ -C ₁₀ alkyl group, a C ₂ -C ₁₀ alkenyl group and a C ₂ -C ₁₀ alkynyl group,

a is selected from an integer of 0 to 10.

4. In any one of 1 to 3 above, the nitrogen-containing vinyl-based monomer may include at least one of 4-vinylpyridine and 2-vinylbenzotriazole.

5. In any one of 1 to 4 above, the composition is

0.5 to 60% by weight of the butadiene-based compound,

0.1 to 10% by weight of the nitrogen-containing vinyl monomer,

0.1 to 10% by weight of the initiator,

0.1 to 20% by weight of at least one of the polystyrene-based binder and the polyolefin-based binder, and

It may contain 30 to 90% by weight of the silica.

6. In any one of 1 to 5 above, the composition may further include at least one of a vinyl end group-containing polyphenylene ether and a vinyl end group-containing polyphenylene oxide.

7. According to another aspect, there is provided a film for sealing a semiconductor device in which the composition for sealing a semiconductor device of any one of 1 to 6 is coated on a base film or a release film in a semi-cured state.

The present invention has an effect of providing a semiconductor device sealing composition and a semiconductor device sealing film having improved dielectric properties and excellent adhesion to a plating layer.

In the present specification, expressions in the singular include plural expressions unless the context clearly indicates otherwise.

In the present specification, terms such as include or have means that the features or components described in the specification exist, and do not preclude the possibility of adding one or more other features or components in advance.

In "a to b" representing a numerical range in the present specification, "to" is defined as ≥a and ≤b.

In the present specification, the number average molecular weight may mean the number average molecular weight in terms of polystyrene measured using gel permeation chromatography (GPC).

In the present specification, * and *'may mean a bonding site with neighboring atoms.

The inventor of the present invention is that when the composition for sealing a semiconductor device contains at least one of a butadiene-based compound, a nitrogen-containing vinyl-based monomer, an initiator, a polystyrene-based binder, and a polyolefin-based binder, and 30 to 90% by weight of silica, a low dielectric constant And while having a low dielectric loss tangent, it was confirmed that the adhesion with the plating layer was also excellent, and the present invention was completed.

Hereinafter, each component will be described in more detail.

Butadiene compound

The composition for sealing a semiconductor device may include a butadiene-based compound. The butadiene-based compound can act as a polymerizable compound, and has the advantage of not generating a polar functional group that can deteriorate dielectric properties during curing.

The butadiene-based compound may include at least one of a butadiene homopolymer and a butadiene copolymer. Examples of the comonomer capable of copolymerization with butadiene include, but are not limited to, maleic anhydride, styrene, and the like. According to one embodiment, the butadiene-based compound may include at least one of polybutadiene, maleic anhydride graft polybutadiene, and styrene-butadiene copolymer. When a styrene-butadiene copolymer is used as the butadiene-based compound, the styrene content in the styrene-butadiene copolymer is not limited thereto, but may be, for example, 10 to 80% by weight, and for example, 20 to 50% by weight. have. In the above range, there may be an effect of preventing film formation from becoming difficult due to too high brittleness while lowering the dielectric constant.

The amount of the butadiene-based compound is not particularly limited, but, for example, the butadiene-based compound may be included in an amount of 0.5 to 60% by weight in the composition for sealing a semiconductor device. In the above range, heat resistance is increased through sufficient crosslinking density, and there may be an effect of obtaining wettability for film formation. For example, the butadiene-based compound may be included in an amount of 1 to 60% by weight, for example 10 to 55% by weight, and another example, 40 to 55% by weight of the composition for sealing a semiconductor device.

Nitrogen-containing vinyl monomer

The composition for sealing a semiconductor device can improve adhesion to the plating layer by including a nitrogen-containing vinyl-based monomer. Here, the nitrogen-containing vinyl-based monomer may mean a compound containing a nitrogen element in a molecule and having a vinyl group.

According to one embodiment, the nitrogen-containing vinyl-based monomer may be represented by the following Formula 1:

<Formula 1>

.

.

In Formula 1, ring A may be a C ₁ -C ₃₀ aromatic heterocyclic group having at least one *-N=*' moiety. For example, Ring A is an imidazole group, pyrazole group, thiazole group, isothiazole group, oxazole group, isoxazole group, triazole group, oxadiazole group, thiadiazole group, tetra Sol group, pyridine group, pyrazine group, pyrimidine group, pyridazine group, triazine group, indazole group, benzoimidazole group, benzotriazole group, isobenzothiazole group, benzoxazole group, isobenzoxazole Group, imidazopyridine group, imidazopyrimidine group, purine group, quinoline group, isoquinoline group, quinoxaline group, quinazoline group, sinnoline group, phthalazine group, naphthyridine group , Azacarbazole group, benzoquinoline group, phenanthridine group, acridine group, phenanthroline group, phenazine group, or phenanthroline group. According to one embodiment, ring A may be a pyridine group or a benzotriazole group, but is not limited thereto.

In Formula 1, R may be selected from a C ₁ -C ₁₀ alkyl group, a C ₂ -C ₁₀ alkenyl group, and a C ₂ -C ₁₀ alkynyl group. For example, R may be selected from a methyl group, an ethyl group, a propyl group, and a vinyl group, but is not limited thereto.

In Formula 1, a may be selected from an integer of 0 to 10. a represents the number of R, and when a is 2 or more, two or more Rs may be the same or different from each other. For example, a may be selected from an integer of 0 to 5. According to an embodiment, a may be 0, but is not limited thereto.

According to another embodiment, the nitrogen-containing vinyl-based monomer may include at least one of a pyridine or pyridine derivative substituted with a vinyl group, and a benzotriazole or benzotriazole derivative substituted with a vinyl group.

According to another embodiment, the nitrogen-containing vinyl-based monomer may include at least one of 4-vinylpyridine and 2-vinylbenzotriazole, but is not limited thereto.

The amount of the nitrogen-containing vinyl-based monomer is not particularly limited, but, for example, the nitrogen-containing vinyl-based monomer may be contained in an amount of 0.1 to 10% by weight in the composition for sealing a semiconductor device. In the above range, there may be an effect of preventing a decrease in crosslinking density of the final cured product while improving adhesion. For example, the nitrogen-containing vinyl-based monomer may be included in an amount of 0.5 to 8% by weight, for example, 1 to 5% by weight of the composition for sealing a semiconductor device.

Initiator

As the initiator, those commonly used in the art may be used without limitation. For example, the initiator may act as a curing agent that generates free radicals by heating or light, and examples of such initiators include organic peroxides and the like. The organic peroxide is not particularly limited, and various types such as ketone peroxide, peroxy ketal, hydroperoxide, dialkyl peroxide, diacyl peroxide, peroxy ester, peroxy carbonate, etc. can be used, and a plurality of peroxides can be used in combination. May be. Specific examples of the organic peroxide include t-butyl peroxylaurate, 1,1,3,3-t-methylbutylperoxy-2-ethyl hexanonate, 2,5-dimethyl-2,5-di(2 -Ethylhexanoyl peroxy) hexane, 1-cyclohexyl-1-methylethyl peroxy-2-ethyl hexanonate, 2,5-dimethyl-2,5-di (m-toluoyl peroxy) hexane, t -Butyl peroxy isopropyl monocarbonate, t-butyl peroxy-2-ethylhexyl monocarbonate, t-hexyl peroxy benzoate, t-butyl peroxy acetate, dicumyl peroxide, 2,5,-dimethyl-2 ,5-di(t-butyl peroxy) hexane, t-butyl cumyl peroxide, t-hexyl peroxy neodecanoate, t-hexyl peroxy-2-ethyl hexanonate, t-butyl peroxy-2 -Ethylhexanoate, t-butyl peroxy isobutylate, 1,1-bis(t-butyl peroxy)cyclohexane, t-hexyl peroxy isopropyl monocarbonate, t-butyl peroxy-3,5, 5-trimethyl hexanoate, t-butyl peroxy pivalate, cumyl peroxy neodecanoate, di-isopropyl benzene hydroperoxide, cumene hydroperoxide, isobutyl peroxide, 2,4-dichlorobenzoyl peroxide , 3,5,5-trimethyl hexanoyl peroxide, octanoyl peroxide, lauryl peroxide, stearoyl peroxide, succin peroxide, benzoyl peroxide, 3,5,5-trimethyl hexanoyl peroxide, benzoyl Peroxy toluene, 1,1,3,3-tetramethyl butyl peroxy neodecanoate, 1-cyclohexyl-1-methyl ethyl peroxy noedecanoate, di-n-propyl peroxy dicarbonate, di -Isopropyl peroxy carbonate, bis(4-t-butyl cyclohexyl) peroxy dicarbonate, di-2-ethoxy methoxy peroxy dicarbonate, di(2-ethyl hexyl peroxy) dicarbonate, dimethoxy butyl Peroxy dicarbonate, di(3-methyl-3-methoxy butyl peroxy) dicarbonate, 1,1-bis(t-hexyl peroxy)-3,3,5-trimethyl cyclohexane, 1,1-bis (t-hexyl peroxy) cyclohexane, 1,1-bis(t-butyl peroxy)-3,3,5-trimethyl cyclohexane, 1,1-(t-butyl peroxy) Si) Cyclododecane, 2,2-bis(t-butyl peroxy)decane, t-butyl trimethyl silyl peroxide, bis(t-butyl) dimethyl silyl peroxide, t-butyl triallyl silyl peroxide, bis( t-butyl) diallyl silyl peroxide, tris (t-butyl) aryl silyl peroxide, and the like, but are not limited thereto. According to one embodiment, the initiator may include dicumyl peroxide.

The amount of the initiator used is not particularly limited, but, for example, the initiator may be contained in an amount of 0.1 to 10% by weight in the composition for sealing a semiconductor device. Within the above range, a sufficient reaction rate is expected in the curing process, and on the other hand, there may be an effect of limiting shrinkage due to volatilization of the initiator. For example, the initiator may be included in an amount of 0.5 to 8% by weight, for example, 1 to 5% by weight, and another such as 1.5 to 4% by weight, in the composition for sealing a semiconductor device.

bookbinder

The composition for sealing a semiconductor device may include one or more of a polystyrene-based binder and a polyolefin-based binder. They can improve the brittle nature of the hardening system to increase fracture toughness and relieve internal stress.

As the polystyrene binder and/or the polyolefin binder, those commonly used in the art may be used without limitation. Examples of polystyrene-based binders include styrene-butadiene copolymer, styrene-butadiene-styrene copolymer, styrene-isoprene copolymer, styrene-isoprene-styrene copolymer, styrene-ethylene-butadiene-styrene copolymer, styrene-ethylene-propylene- And styrene copolymers, and these may be used alone or in combination of two or more. Examples of the polyolefin binder include polyethylene, polypropylene, polybutylene, polyisobutylene, poly-4-methyl-1-pentene, ethylene-propylene copolymer, ethylene-propylene-ethylene copolymer, propylene-ethylene-propylene copolymer And the like, and these may be used alone or in combination of two or more.

The amount of the polystyrene-based binder and/or the polyolefin-based binder is not particularly limited, but, for example, the polystyrene-based binder and/or the polyolefin-based binder may be contained in an amount of 0.1 to 20% by weight in the composition for sealing a semiconductor device. In the above range, there may be an effect of maintaining heat resistance while improving film formation performance. For example, the polystyrene-based binder and/or the polyolefin-based binder may be included in the composition for sealing semiconductor devices in an amount of 0.5 to 15% by weight, another such as 1 to 10% by weight, and another such as 2 to 8% by weight. .

Inorganic filler

The composition for sealing semiconductor devices may include 30 to 90% by weight of silica. As a result, it is possible to improve the mechanical properties of the composition for sealing a semiconductor device and to reduce stress. For example, silica may be included in 30 to 70% by weight, for example, 30 to 60% by weight, and in another example, 30 to 50% by weight, in the composition for sealing a semiconductor device, but is not limited thereto.

According to one embodiment, fused silica having a low coefficient of linear expansion may be used to reduce stress. Fused silica refers to amorphous silica having a true specific gravity of 2.3 or less, and may also include amorphous silica made by melting crystalline silica or synthesized from various raw materials. The shape and particle diameter of the fused silica are not particularly limited, but 50 to 99% by weight of spherical fused silica having an average particle diameter (D ₅₀ ) greater than 1 to 30 μm, and a spherical fused silica having an average particle diameter (D ₅₀ ) of 0.001 to 1 μm 1 A fused silica mixture including to 50% by weight may be included in an amount of 40 to 100% by weight based on the total filler. Here, the average particle diameter (D ₅₀ ) may be measured with a particle size analyzer. In addition, the maximum particle diameter can be adjusted to one of 45 µm, 55 µm, and 75 µm according to the intended use.

According to another embodiment, the composition for sealing semiconductor devices includes inorganic fillers such as calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, and glass fiber in addition to silica. It may further include, and the amount thereof may be appropriately selected within a range that does not impair the object of the present invention.

The composition for sealing a semiconductor device according to an embodiment of the present invention may further include a vinyl end group-containing polyphenylene ether and/or a vinyl end group-containing polyphenylene oxide.

Polyphenylene ether containing vinyl end groups and/or polyphenylene oxide containing vinyl end groups

The vinyl end group-containing polyphenylene ether and/or the vinyl end group-containing polyphenylene oxide may have an effect of increasing insulation reliability.

The amount of polyphenylene ether containing vinyl end group and/or polyphenylene oxide containing vinyl end group is not particularly limited, but for example, polyphenylene ether containing vinyl end group and/or polyphenylene oxide containing vinyl end group It may be included in an amount of 0.1 to 10% by weight in the composition for sealing a semiconductor device. In the above range, there may be an effect of increasing insulation reliability while maintaining a low dielectric constant. For example, the vinyl end group-containing polyphenylene ether and/or the vinyl end group-containing polyphenylene oxide is 0.5 to 10% by weight, another example, 1 to 5% by weight, and another example in the composition for sealing a semiconductor device. For example, it may be included in 2 to 4% by weight.

The composition for sealing a semiconductor device according to an embodiment of the present invention may further include at least one of a coupling agent and a colorant.

Coupling agent

The coupling agent is for improving the interfacial strength by reacting between the organic material and the inorganic filler, and examples of the coupling agent include a silane coupling agent. Examples of the silane coupling agent include silicone oil, epoxy silane, amino silane, ureido silane, mercapto silane, and/or alkyl silane. The coupling agent can be used alone or in combination.

The amount of the coupling agent to be used is not particularly limited, but for example, the coupling agent may be contained in an amount of 0.01 to 5% by weight (eg, 0.05 to 3% by weight) in the composition for sealing semiconductor devices. In the above range, the strength of the cured composition may be improved.

coloring agent

The colorant is for laser marking of the semiconductor device sealing material, and colorants well known in the art may be used, and there is no particular limitation. For example, the colorant may include at least one of carbon black, titanium black, titanium nitride, copper hydroxide phosphate, iron oxide, and mica.

The amount of the colorant to be used is not particularly limited, but, for example, the colorant may be contained in an amount of 0.01 to 5% by weight (eg, 0.05 to 3% by weight) in the composition for sealing semiconductor devices.

In addition, the composition for sealing a semiconductor device may include antioxidants such as Tetrakis[methylene-3-(3,5-di-tertbutyl-4-hydroxyphenyl)propionate]methane, etc., within a range that does not impair the object of the present invention; Flame retardants, such as aluminum hydroxide, may be additionally contained as necessary.

The above-described composition for sealing a semiconductor device may be manufactured in the form of a film for sealing a semiconductor device and applied to a semiconductor device. Such a film for sealing a semiconductor device, for example, is applied to a base film in the form of a varnish by dissolving the above-described composition for sealing a semiconductor device in an organic solvent, followed by heating and drying to remove volatile components in the varnish to form a composition layer. It can be produced by forming. In the process of obtaining the varnish, an organic solvent can be used so that a blend of various components can be easily obtained. For example, ketones such as acetone, methyl ethyl ketone, and cyclohexanone, ethyl acetate, butyl acetate, cellosolve acetate, propylene One type of solvent containing an acetic acid ester such as glycol monomethyl ether acetate and an aromatic hydrocarbon such as toluene and xylene may be used, or two or more may be used in combination. As a base film, for example, polyester, polyimide, polyamide, polyether sulfone, polyphenylene sulfide, polyether ketone, polyether ether ketone, preacetylcellulose, polyetheramide, polyethylene naphthalate, polypropylene and It may be selected from polycarbonate, but is not limited thereto. According to one embodiment, a release film having peeling properties may be used as the base film, and such release films include polyolefins such as polyethylene, polyvinyl chloride, and polypropylene, polyesters such as polyethylene terephthalate, and release paper. ) May be selected, but is not limited thereto. As a method of applying the varnish on the base film, an appropriate one may be selected from coating methods known in the art such as roll coating, gravure coating, microgravure coating, bar coating, and knife coating.

According to another aspect, a semiconductor device sealed using the above-described composition for sealing semiconductor elements is disclosed.

According to another aspect, there is provided a film for sealing a semiconductor device in which the above-described semiconductor device sealing composition is coated on a base film (for example, a release-treated base film) or a release film in a semi-cured state.

When the composition for sealing semiconductor devices is manufactured and used in the form of a film, lamination of the film on the chip when packaging a semiconductor device (for example, panel level packaging (PLP) packaging) without cutting each chip The semiconductor can be sealed after being completely cured, and thus the semiconductor device can be sealed in a more simple manner over a larger area. The release-treated base film or release film can be removed immediately after lamination, during or after the curing process.

The thickness of the base film or the release film may be appropriately selected in consideration of semiconductor device packaging conditions and the like. For example, the thickness of the base film or the release film may be 10 to 90 μm, for example, 25 to 75 μm, but is not limited thereto.

The thickness of the coated semiconductor sealing composition film may be appropriately selected in consideration of semiconductor device packaging conditions and the like. For example, the thickness of the coated semiconductor sealing composition film may be 5 to 150 μm, for example, 15 to 120 μm, but is not limited thereto.

The method of manufacturing the film for sealing semiconductor elements is not particularly limited. For example, it may be prepared by coating a coating liquid containing the above-described composition for sealing a semiconductor device on a base film (eg, a release-treated base film) or a release film, followed by drying and semi-curing. At this time, the drying and semi-curing conditions are not particularly limited, and the drying may be performed at a temperature of, for example, 70 to 90° C. for 1 to 15 minutes, and the semi-curing is performed at, for example, 100 to 150° C. It can be carried out for 1 to 10 minutes at temperature. The coating solution is a suitable solvent, for example 1-methoxy-2-propanol acetate (PGMEA), 2-butanone, methyl ethyl ketone (MEK), acetone, toluene, dimethylformamide ( DMF), methyl cellosolve (MCS), tetrahydrofuran (THF) and/or N-methylpyrrolidone (NMP), propylene glycol methyl ether (PGME), and the like. As the coating method, known methods such as screen printing, knife coating, roll coating, spray coating, gravure coating, curtain coating, comma coating, and lip coating may be used without limitation.

According to another aspect, a semiconductor device sealed by using the above-described film for sealing semiconductor elements is disclosed. The sealing method of the semiconductor device may include a compression molding method, a lamination method, or a combination thereof, but the method is not particularly limited.

Hereinafter, a composition for sealing a semiconductor device according to an embodiment of the present invention will be described in more detail by way of examples. However, this has been presented as an example of the present invention, and it cannot be construed as limiting the present invention in any sense.

Example

Specific specifications of the components used in the following Examples and Comparative Examples are as follows.

(A) Butadiene compound

(a1) Styrene-butadiene copolymer: Ricon 100, Cray valley (Total) (Number average molecular weight: 4,500)

(a2) Polybutadiene: Ricon 156, Cray valley (Total), (Number average molecular weight: 1,400)

(B) nitrogen-containing vinyl monomer

(b1) 4-vinylpyridine

(b2) 2-vinylbenzotriazole

(C) Initiator: Dicumyl peroxide, Aldrich Corporation

(D) epoxy resin

(d1) Biphenol A/F type epoxy resin, KDS-8161, Kukdo Chemical

(d2) Biphenyl type epoxy resin, NC-3000, Nippon Kayaku

(E) Hardener: Phenol novolak type resin, HF-3M, Meiwa company

(F) binder

(f1) Polystyrene binder: styrene-ethylene-butadiene-styrene copolymer (SEBS), G1642 H polymer, Kraton

(f2) Polyolefin binder: MS-003M, Toyobo

(G) Epoxy-modified acrylic acid ester copolymer: SG-P3, ChemteX

(H) Carboxy group-containing acrylonitrile butadiene rubber: PNR-1H, JSR

(I) Silica: a mixture of 9:1 by weight of a spherical melt having an average particle diameter (D ₅₀ ) 2 μm and a spherical melt having an average particle diameter (D ₅₀ ) 0.3 μm

(J) Polyphenylene ether containing vinyl end group: SA-9000, SABIC

(K) coupling agent

(k1) Silicone oil, FZ-3736, Dow Chemical

(k2) N-phenyl-3-aminopropyltrimethoxy silane, KBM-573, Shin-Etsu

Examples 1 to 5 and Comparative Examples 1 to 3

Of the above components, silica as component (I), butadiene compound as component (A), and epoxy resin as component (D) are uniformly mixed in an organic solvent (PGMEA) using a paste mixer to prepare a solution having a solid content of 85% After that, the agglomerated particles were removed from the solution using a 3-roll mill. The solid content of the milled solution was measured, the amount of organic solvent evaporated during the milling process was calculated, and then reflected and added to the composition. Subsequently, the remaining components other than the components (I), (A), and (D) were also weighed so that the composition of Table 1 (unit: wt%), and then organic solvents (MEK, PGME) were added, and the planetary ) Mixing using a mixer to prepare a coating solution of the composition for sealing semiconductor devices. The final solid content of the coating solution was made to be 65%. Thereafter, the coating solution was coated on a release film (RPK-201, thickness 38 μm, Toray Advanced Materials) to a thickness of 120 μm, dried in a convection oven at 80° C. for 7 minutes, and then semi-cured at 125° C. for 7 minutes. , To prepare a film for sealing semiconductor elements.

Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Comparative Example 2 Comparative Example 3 (A) (a1) 46 46 44 44 - 48 46 (a2) 4.6 4.6 4.4 4.4 - 4.8 4.6 (B) (b1) - 2.3 2.3 - - - (b2) 2.3 - 2.3 - - - 2.3 (C) 2.4 2.4 2.3 2.3 - 2.5 2.4 (D) (d1) - - - - 18.3 - - (d2) - - - - 11 - - (E) - - - - 26 - - (F) (f1) 4 4 - - - 4 - (f2) - - 4 4 - - - (G) - - - - 4 - - (H) - - - - - - 4 (I) 40 40 40 40 40 40 40 (J) - - 2.3 2.3 - - - (K) (k1) 0.1 0.1 0.1 0.1 0.1 0.1 0.1 (k2) 0.6 0.6 0.6 0.6 0.6 0.6 0.6

The physical properties shown in Table 2 below were evaluated for the film for sealing semiconductor devices prepared in the above Examples and Comparative Examples.

(1) Dielectric constant and loss tangent: After fully curing the semiconductor device sealing film prepared in Examples and Comparative Examples in a convection oven at 180° C. for 70 minutes, a network analyzer is attached After measuring the dielectric constant and dielectric loss tangent at 200MHz to 15GHz using a DAK-TL dielectric evaluation kit (SPEAG, Switzerland), the dielectric properties at 10GHz are shown in Table 2. Measurement was carried out at 25°C.

(2) Surface roughness after desmearing of copper clad laminate (unit: nm): The surface roughness of the film is based on the arithmetic mean roughness (Ra) specified in Japanese Industrial Standard (JIS) B0601, and the surface shape measurement system WYCO N T3300 ( Veeco Instruments) was used.

(3) Adhesion (unit: kgf/cm): The film for sealing semiconductor devices prepared in Examples and Comparative Examples was placed on a copper clad laminate so that the coating layer was in contact with each other and adhered with an experimental laminator (110°C, 3m/min) and the release film was removed. Subsequently, the coating layer attached to the copper clad laminate was completely cured in a convection oven at 180° C. for 70 minutes, followed by a plating process including a desmear (pre-treatment) process. The plating layer (opposite side of the copper clad laminate) and the coating composition layer of the specimen after the plating process were peeled off, and peeled by 90° using a universal testing machine (UTM) to measure the peel strength. The adhesion measurement was performed five times for each sample, and the average values are shown in Table 2 below.

Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Comparative Example 2 Comparative Example 3 permittivity 2.5 2.6 2.5 2.6 3.7 2.6 3.0 Genetic loss tangent 0.007 0.006 0.005 0.006 0.018 0.006 0.0019 Surface roughness after desmearing of copper clad laminate (nm) 70 65 65 75 40 65 120 Adhesion (kgf/cm) 0.55 0.53 0.52 0.55 0.20 0.19 0.35

From Table 2, it can be seen that the composition of the embodiment of the present invention has a low dielectric constant, a low dielectric loss tangent, and has high adhesion to a copper clad laminate.

On the other hand, it can be seen that the composition of Comparative Example 1 containing an epoxy resin composition other than the composition of the present invention has higher dielectric constant and dielectric loss tangent than the composition of the Example, and lower adhesion to the copper clad laminate.

In addition, it can be seen that the composition of Comparative Example 2, which does not contain a nitrogen-containing vinyl-based monomer, has lower adhesion to the copper clad laminate than the composition of the Example.

In addition, it can be seen that the composition of Comparative Example 3 containing acrylonitrile butadiene rubber containing a carboxyl group other than the binder of the present application has a higher dielectric constant and dielectric loss tangent than the Example composition, and has low adhesion despite the high surface roughness after desmear have.

Simple modifications or changes of the present invention can be easily implemented by those of ordinary skill in the art, and all such modifications or changes can be considered to be included in the scope of the present invention.

Claims (7)

A composition for sealing a semiconductor device comprising at least one of a butadiene compound, a nitrogen-containing vinyl monomer, an initiator, a polystyrene binder, and a polyolefin binder, and 30 to 90% by weight of silica.
The method of claim 1,
The butadiene-based compound is a composition for sealing a semiconductor device comprising at least one of polybutadiene, maleic anhydride grafted polybutadiene, and styrene-butadiene copolymer.
The method of claim 1,
The nitrogen-containing vinyl-based monomer is a composition for sealing a semiconductor device represented by the following Formula 1:
<Formula 1>

In Formula 1,
Ring A is a C ₁ -C ₃₀ aromatic heterocyclic group having at least one *-N=*' moiety,
R is selected from a C ₁ -C ₁₀ alkyl group, a C ₂ -C ₁₀ alkenyl group and a C ₂ -C ₁₀ alkynyl group,
a is selected from an integer of 0 to 10.
The method of claim 1,
The nitrogen-containing vinyl-based monomer is a composition for sealing a semiconductor device comprising at least one of 4-vinylpyridine and 2-vinylbenzotriazole.
The method of claim 1,
0.5 to 60% by weight of the butadiene-based compound,
0.1 to 10% by weight of the nitrogen-containing vinyl monomer,
0.1 to 10% by weight of the initiator,
0.1 to 20% by weight of at least one of the polystyrene-based binder and the polyolefin-based binder, and
A composition for sealing a semiconductor device comprising 30 to 90% by weight of the silica.
The method of claim 1,
The composition further comprises at least one of polyphenylene ether containing vinyl end groups and polyphenylene oxide containing vinyl end groups.
A film for sealing a semiconductor device in which the composition for sealing a semiconductor device according to any one of claims 1 to 6 is coated on a base film or a release film in a semi-cured state.