KR20200127004A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20200127004A
KR20200127004A KR1020207027597A KR20207027597A KR20200127004A KR 20200127004 A KR20200127004 A KR 20200127004A KR 1020207027597 A KR1020207027597 A KR 1020207027597A KR 20207027597 A KR20207027597 A KR 20207027597A KR 20200127004 A KR20200127004 A KR 20200127004A
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KR
South Korea
Prior art keywords
transistor
oxide
conductor
insulator
addition
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Ceased
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KR1020207027597A
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English (en)
Korean (ko)
Inventor
슌페이 야마자키
šœ페이 야마자키
기요시 가토
도모아키 아츠미
슌헤이 나가츠카
šœ헤이 나가츠카
히토시 구니타케
요코 츠카모토
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20200127004A publication Critical patent/KR20200127004A/ko
Ceased legal-status Critical Current

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    • H01L27/088—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H01L21/02565—
    • H01L21/8234—
    • H01L29/24—
    • H01L29/78648—
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020207027597A 2018-03-06 2019-02-21 반도체 장치 Ceased KR20200127004A (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JPJP-P-2018-039854 2018-03-06
JP2018039854 2018-03-06
JPJP-P-2018-075977 2018-04-11
JP2018075977 2018-04-11
JPJP-P-2018-149313 2018-08-08
JP2018149313 2018-08-08
PCT/IB2019/051406 WO2019171198A1 (ja) 2018-03-06 2019-02-21 半導体装置

Publications (1)

Publication Number Publication Date
KR20200127004A true KR20200127004A (ko) 2020-11-09

Family

ID=67847019

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020207027597A Ceased KR20200127004A (ko) 2018-03-06 2019-02-21 반도체 장치

Country Status (5)

Country Link
US (1) US12300752B2 (https=)
JP (1) JP7209692B2 (https=)
KR (1) KR20200127004A (https=)
CN (1) CN111788697B (https=)
WO (1) WO2019171198A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220077975A (ko) * 2020-12-02 2022-06-10 삼성디스플레이 주식회사 표시 장치의 검사 방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7679305B2 (ja) 2019-11-08 2025-05-19 株式会社半導体エネルギー研究所 半導体装置
CN111834413A (zh) * 2020-04-17 2020-10-27 昆山国显光电有限公司 显示面板以及显示装置
CN112289796B (zh) * 2020-10-28 2021-09-28 长江存储科技有限责任公司 三维存储器的制造方法及三维存储器
JP7393471B2 (ja) * 2021-06-03 2023-12-06 シャープ株式会社 光電変換装置およびｘ線撮像装置
CN114339313B (zh) * 2021-12-28 2024-09-13 维沃移动通信有限公司 插帧方法、装置及电子设备

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US7566633B2 (en) 2005-02-25 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5046529B2 (ja) * 2005-02-25 2012-10-10 株式会社半導体エネルギー研究所 半導体装置
JP2008004796A (ja) * 2006-06-23 2008-01-10 Matsushita Electric Ind Co Ltd 半導体装置および回路素子レイアウト方法
KR101291384B1 (ko) * 2008-11-21 2013-07-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2011205049A (ja) * 2010-03-26 2011-10-13 Toshiba Corp 半導体集積回路
KR20120004774A (ko) 2010-07-07 2012-01-13 주식회사 하이닉스반도체 더미 패턴을 포함하는 반도체 장치 및 레이아웃
US8643008B2 (en) 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6016455B2 (ja) 2012-05-23 2016-10-26 株式会社半導体エネルギー研究所 半導体装置
JP6607681B2 (ja) 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
US9336348B2 (en) 2014-09-12 2016-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming layout design
KR20160093749A (ko) * 2015-01-29 2016-08-09 삼성디스플레이 주식회사 표시 기판, 이의 제조 방법 및 이를 포함하는 표시 장치
CN113314545B (zh) 2015-04-20 2024-10-29 株式会社半导体能源研究所 半导体装置及电子设备

Non-Patent Citations (8)

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Title
K. Kato et al., "Japanese Journal of Applied Physics", 2012, volume 51, p.021201-1-021201-7
S. Amano et al., "SID Symposium Digest of Technical Papers", 2010, volume 41, issue 1, p.626-629
S. Ito et al., "The Proceedings of AM-FPD'13 Digest of Technical Papers", 2013, p.151-154
S. Matsuda et al., "2015 Symposium on VLSI Technology Digest of Technical Papers", 2015, p.T216-T217
S. Yamazaki et al., "ECS Journal of Solid State Science and Technology", 2014, volume 3, issue 9, p.Q3012-Q3022
S. Yamazaki et al., "Japanese Journal of Applied Physics", 2014, volume 53, Number 4S, p.04ED18-1-04ED18-10
S. Yamazaki et al., "SID Symposium Digest of Technical Papers", 2012, volume 43, issue 1, p.183-186
S. Yamazaki, "ECS Transactions", 2014, volume 64, issue 10, p.155-164

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220077975A (ko) * 2020-12-02 2022-06-10 삼성디스플레이 주식회사 표시 장치의 검사 방법

Also Published As

Publication number Publication date
US20210367078A1 (en) 2021-11-25
JPWO2019171198A1 (ja) 2021-02-12
US12300752B2 (en) 2025-05-13
CN111788697B (zh) 2024-06-28
JP7209692B2 (ja) 2023-01-20
WO2019171198A1 (ja) 2019-09-12
CN111788697A (zh) 2020-10-16

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