KR20200115039A - Split sputtering target and manufacturing method thereof - Google Patents

Abstract

The present invention provides a split sputtering target formed by joining a plurality of sputtering target members on a backing plate, wherein the thickness of each sputtering target member is controlled. The split sputtering target includes: a plurality of flat sputtering target members which are arranged on the backing plate with a gap therebetween; a bonding material which is arranged between the backing plate and each sputtering target member; a mask material which is arranged in each gap between adjacent sputtering target members; and a plurality of wire shaped spacers for adjusting the thickness of the bonding material, which are arranged between the backing plate and each sputtering target member at a position not overlapping with the mask material. The present invention can enlarge an area of a sputtering film.

Description

Split sputtering target and its manufacturing method TECHNICAL FIELD [SPLIT SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF}

The present invention relates to a divided sputtering target in which a plurality of sputtering target members, particularly oxide semiconductor sputtering target members, are bonded on a backing plate. Further, the present invention relates to a method of manufacturing a divided sputtering target.

The sputtering method is widely used as a film forming method for producing thin films of various electronic devices including display devices such as liquid crystal displays and organic EL displays. In recent years, with the increase in the size of the display device, the size of the sputtering target used in the sputtering method has been demanded.

As a sputtering target for a display device, an oxide semiconductor sputtering target member is widely used. However, since the oxide semiconductor sputtering target member is made of ceramics, it is fragile and it is difficult to increase its area. For this reason, it has been conventionally practiced to use a divided sputtering target in which a plurality of sputtering target members are joined on a backing plate.

When using the split sputtering target, taking into account the difference in thermal expansion between the material constituting the backing plate (typically copper) and the sputtering target member, it is common to provide a slight gap between the adjacent sputtering target members. However, if there is a gap between adjacent sputtering target members, there is a risk that the backing plate is also sputtered during sputtering, and the material (typically copper) constituting the backing plate is mixed in the sputtering film, thereby adversely affecting the properties of the sputtering film. have. Therefore, in a divided sputtering target, a method of preventing exposure of the backing plate has been proposed by disposing a mask material in a gap between adjacent sputtering target members.

In Japanese Patent No. 5711172 (Patent Document 1), in a divided sputtering target formed by joining a plurality of target members on a backing plate with low melting point solder, along the gap formed between the joined target members, A protective body is provided on the backing plate, the target member is an oxide semiconductor, the protective body is composed of a tape-shaped first protective member and a tape-shaped second protective member, and a second protective member is disposed on the backing plate side, A split sputtering target, characterized in that a first protective member is laminated on a second protective member, and the first protective member is a polymer sheet, has been proposed.

In Japanese Patent No. 6079228 (Patent Document 2), in a multi-division sputtering target, 1 of the height of the target material surface from the backing plate surface so that the solder material is not exposed along the bottom of the division portion formed of the adjacent target material. A multi-division sputtering target, characterized in that a metal wire-like protective material having a height of /10 or less is provided on a solder material has been proposed.

In Japanese Patent No. 4961513 (Patent Document 3), in a divided sputtering target formed by joining a plurality of target members on a backing plate with a low melting point solder, a target member is provided in the gap formed between the joined target members. A divided sputtering target, characterized in that a ceramic material made of ceramic powder containing a metal element constituting a is filled, and the filling thickness of the ceramic powder is 10% to 70% of the depth of the gap formed between the target members has been proposed. .

In Japanese Patent No. 4961514 (Patent Document 4), in a divided sputtering target formed by joining a plurality of target members on a backing plate with low melting point solder, along the gap formed between the joined target members, A protective body is provided on the backing plate, and the protective body is composed of a tape-shaped first protective member and a tape-shaped second protective member, and a second protective member is disposed on the backing plate side, and provided on the second protective member. A divided sputtering target, characterized in that one protective member is stacked and the first protective member is formed of a ceramic material made of oxide or nitride, has been proposed.

Japanese Patent No. 5711172 Japanese Patent No. 6079228 Japanese Patent No. 4961513 Japanese Patent No. 4961514

As described above, in a divided sputtering target, a method of preventing exposure of the backing plate by disposing a mask material in the gap between adjacent sputtering target members has been proposed. However, in the case of a divided sputtering target, since each sputtering target member is independently bonded to the backing plate, there is a problem that variations in the thickness of a bonding material such as low melting point solder are liable to occur. In the prior art, examination of controlling the thickness of the bonding material for joining each of the divided sputtering target members is insufficient.

The present invention was created in view of the above circumstances, and in one embodiment, it is a divided sputtering target in which a plurality of sputtering target members are joined on a backing plate, and a divided sputtering target in which the thickness of each sputtering target member is controlled is provided. Make it a task. In addition, in another embodiment, the present invention makes it a subject to provide a method for manufacturing such a divided sputtering target.

In order to solve the above problems, the present inventors have found that it is advantageous to arrange a wire-shaped spacer between the backing plate and each sputtering target member. And it was found that it is advantageous for thickness control to arrange a spacer so that it may not overlap with the mask material provided in the gap between adjacent sputtering target members. The present invention was completed based on the above findings, and is exemplified below.

[One]

A plurality of flat sputtering target members arranged with a gap on the backing plate,

A bonding material disposed between the backing plate and each sputtering target member,

A mask material disposed in the gap between adjacent sputtering target members,

Between the backing plate and each sputtering target member, a plurality of wire-shaped spacers for adjusting the thickness of the bonding material, disposed at a position not overlapping with the mask material, are provided.

Equipped split sputtering target.

[2]

The divided sputtering target according to [1], in which all of the plurality of wire-like spacers do not have a portion extending and protruding from the outer peripheral side surface of the sputtering target member when viewed in plan view.

[3]

The divided sputtering target according to [1] or [2], in which at least one of the plurality of wire-like spacers has one end or both ends located immediately below a portion of the outer peripheral side surface of the sputtering target member where the mask material is not disposed.

[4]

At least one of the plurality of flat sputtering target members has a rectangular shape in plan view, and at least one of the plurality of wire-shaped spacers constitutes one of the four sides of the rectangular shape sputtering target member in the at least one plane view. Both ends are located immediately below the outer circumferential side, or each end is located immediately below each outer circumferential side constituting two adjacent sides. The split sputtering target described in [3].

[5]

At least one of the plurality of wire-shaped spacers is positioned immediately below the outer peripheral side surface constituting one of the four sides of the rectangular sputtering target member as viewed from the at least one plane, and the backing plate and the at least one plane The divided sputtering target according to [4], which is arranged in a V-shape when viewed from a plane in which the ends are tapered as they are spaced apart from both ends of the rectangular sputtering target members as viewed from.

[6]

At least one of the plurality of wire-shaped spacers is positioned immediately below the outer peripheral side surface constituting one of the four sides of the rectangular sputtering target member as viewed from the at least one plane, and the backing plate and the at least one plane The divided sputtering target according to [4], which is arranged in an isosceles trapezoidal shape when viewed from a plane in which the ends are tapered as they are spaced apart from both ends of the rectangular sputtering target members as viewed from.

[7]

At least one of the plurality of wire-shaped spacers is positioned immediately below each outer peripheral side surface constituting two adjacent sides of the four sides of the rectangular sputtering target member when viewed from the at least one plane, and the backing plate and the The divided sputtering target according to [4], which is arranged in an L-shape when viewed in a plan view between at least one rectangular sputtering target member viewed from the plane.

[8]

The divided sputtering target according to any one of [1] to [7], in which a plurality of flat plate sputtering target members are formed of an oxide semiconductor.

[9]

The divided sputtering target according to any one of [1] to [8], wherein the plurality of wire-shaped spacers have a diameter of 0.1 mm to 1.0 mm.

[10]

According to any one of [1] to [9], the material of the plurality of wire-shaped spacers is a metal selected from the group consisting of copper, titanium, iron, aluminum, nickel, and chromium, or an alloy containing at least one of them. The described split sputtering target.

[11]

The divided sputtering target according to any one of [1] to [10], wherein the upper surface of the mask material is positioned below the lower surface of each sputtering target member, and a bonding material is interposed between the upper surface of the mask material and the lower surface of each sputtering target member.

[12]

The divided sputtering target according to [11], wherein the length of the plurality of wire-shaped spacers in the thickness direction of the mask material is greater than the thickness of the mask material.

[13]

The divided sputtering target according to [11] or [12], wherein the width of the mask material disposed in the gap is equal to or larger than the spacing between adjacent sputtering target members.

[14]

The division according to any one of [1] to [13], in which a plurality of flat sputtering target members each have a rectangular shape in plan view, and are arranged in 2 rows x N columns (N is a natural number of 1 or more) on the backing plate. Sputtering target.

[15]

The material of the mask material is the divided sputtering target according to any one of [1] to [14], which is insulating.

[16]

The divided sputtering target according to any one of [1] to [15], in which the mask material is exposed in the gap.

[17]

A film forming method comprising sputtering the divided sputtering target according to any one of [1] to [16].

[18]

Step a of arranging the mask material on the backing plate, and

Step b of arranging a plurality of wire-shaped spacers for adjusting the thickness of the bonding material at a position that does not overlap with the mask material on the backing plate; and

Step c of heating the backing plate on which the mask material and the wire-like spacers are disposed and a plurality of flat plate-like sputtering target members to apply a bonding material to each of the bonding surfaces; and

Step d of bonding the backing plate on which the mask material and the wire-like spacers are disposed and a plurality of flat plate-like sputtering target members through a molten bonding material,

After that, the process e of solidifying the bonding material by cooling

The method for producing the divided sputtering target according to any one of [1] to [16] to be included.

[19]

In step b, the wire-shaped spacer is disposed so as to have a portion protruding from a portion where the mask material is not disposed among the outer peripheral side surfaces of the sputtering target member to be disposed thereon in plan view, and the extended protruding portion is And temporarily fixing the sputtering target member to the backing plate at a position not overlapping with the sputtering target member to be disposed, the method for producing a divided sputtering target according to [18].

[20]

[19] further comprising the step of cutting and removing the extended protruding portion after performing the step e so that the cut surface is positioned immediately below the portion where the mask material is not disposed of the outer peripheral side of the sputtering target member [19] The method for producing the divided sputtering target described in.

According to one embodiment of the present invention, when the split sputtering target is used, it is possible to prevent the components of the backing plate from being mixed into the sputtering film.

Further, according to one embodiment of the present invention, the thickness of the bonding material to which each sputtering target member is joined in a divided sputtering target can be easily controlled. For this reason, it becomes easy to match the height of the upper surface between a plurality of sputtering target members. That is, it becomes easy to produce a divided sputtering target of the same plane without a step or undulation in the height of the upper surface between a plurality of sputtering target members. Thereby, it is expected that nodules and particles during sputtering can be suppressed. In addition, it is expected that each sputtering target member constituting the divided sputtering target becomes less likely to crack by eliminating unevenness in heat transfer characteristics between a plurality of sputtering targets.

Therefore, according to one embodiment of the present invention, it is possible to provide a divided sputtering target that contributes to a large area of a sputtering film. It is considered that the split sputtering target can greatly contribute to industrial production of large-sized display devices such as large-sized liquid crystal displays and large-sized organic EL displays.

1 is a schematic plan view of a divided sputtering target according to an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view of a divided sputtering target according to an embodiment of the present invention when cut in the thickness direction.
3 is a schematic cross-sectional view for explaining a method of manufacturing a divided sputtering target according to an embodiment of the present invention.
FIG. 4 shows a state when a plurality of wire-shaped spacers are temporarily fixed using an adhesive tape before joining a plurality of flat sputtering target members in the process of manufacturing the divided sputtering target according to the embodiment of FIG. 1. It is a schematic floor plan.
5A is a schematic plan view before peeling the adhesive tape for temporary fixing in the manufacturing process of the split sputtering target according to Example 1. FIG.
5B is a schematic plan view of a divided sputtering target according to Example 1. FIG.
6A is a schematic plan view before peeling the adhesive tape for temporary fixing in the manufacturing process of the split sputtering target according to Example 2. FIG.
6B is a schematic plan view of a divided sputtering target according to the second embodiment.
7A is a schematic plan view before peeling the adhesive tape for temporary fixing in the manufacturing process of the split sputtering target according to Example 3. FIG.
7B is a schematic plan view of a divided sputtering target according to the third embodiment.
8A is a schematic plan view before peeling the adhesive tape for temporary fixing in the manufacturing process of the divided sputtering target according to Example 4. FIG.
8B is a schematic plan view of a divided sputtering target according to the fourth embodiment.
9A is a schematic plan view before peeling the adhesive tape for temporary fixing in the manufacturing process of the split sputtering target according to Example 5. FIG.
9B is a schematic plan view of a divided sputtering target according to the fifth embodiment.
10A is a schematic plan view before peeling the adhesive tape for temporary fixing in the manufacturing process of the split sputtering target according to Example 6. FIG.
10B is a schematic plan view of a divided sputtering target according to the sixth embodiment.
11 is a schematic plan view of a divided sputtering target according to Example 7. FIG.
12 is a schematic plan view of a divided sputtering target according to Comparative Example 1. FIG.
13 is a schematic plan view of a divided sputtering target according to Comparative Example 2. FIG.
Fig. 14 is a flaw diagram showing an arrangement of a plurality of wire-like spacers in a divided sputtering target according to the fourth embodiment.

<A. Split sputtering target>

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. 1 is a schematic plan view of a divided sputtering target 100 according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view of a divided sputtering target 100 according to an embodiment of the present invention cut in the thickness direction.

The divided sputtering target 100 according to the embodiment of the present invention,

A plurality of flat sputtering target members 104 arranged with a gap 103 on the backing plate 102,

A bonding material 106 disposed between the backing plate 102 and each sputtering target member 104,

A mask material 108 disposed in the gap 103 between adjacent sputtering target members 104,

A plurality of wire-shaped spacers 110 (110a, 110b, 110c) for adjusting the thickness of the bonding material 106, which are between the backing plate 102 and each sputtering target member 104, and disposed at a position not overlapping with the mask material 108 , 110d))

Equipped.

(1. Backing plate)

The backing plate functions to increase the structural strength of the divided sputtering target by bonding with the sputtering target member. The use of a backing plate is particularly advantageous when the sputtering target member is formed of a soft material such as ceramics. The material for forming the backing plate is preferably a metal from the viewpoint of strength, and examples thereof include aluminum, aluminum alloy, stainless steel, copper and copper alloy, titanium, tungsten, molybdenum, and the like. In addition, in particular, when a backing plate made of a highly conductive metal such as copper is used, an abnormality during sputtering becomes remarkable due to the exposure of the backing plate in the gap between the targets, so a bonding method using a mask material is effective.

In one embodiment, the backing plate may be flat. The shape of the backing plate viewed from the plane is not particularly limited, but may be, for example, a polygonal shape, typically a rectangular shape, and more typically a rectangular shape. Each vertex of the polygon can be properly chamfered.

The thickness of the backing plate may be appropriately set according to the structural strength, weight, and dimensions of the required split sputtering target, and although there is no particular limitation, it may be, for example, 3 to 30 mm, typically 5 to 20 mm. can do.

(2. Sputtering target member)

On the backing plate, a plurality of flat sputtering target members can be arranged with a gap. The arrangement method is not particularly limited, and a plurality of flat sputtering target members can be arranged in M rows x N columns (M is a natural number of 2 or more, and N is a natural number of 1 or more) on a backing plate. Among these, from the viewpoint of being able to easily temporarily fix all the wire-shaped spacers arranged under the plurality of flat sputtering target members, the plurality of flat sputtering target members is 2 rows x N columns (N is a natural number of 1 or more). It is preferable to arrange it. A method of temporarily fixing the wire-shaped spacer will be described later. It is more preferable to arrange the divided sputtering targets in 2 rows x N columns (N is a natural number of 2 or more) from the viewpoint of being easy to enlarge the size.

The spacing (gap) between adjacent sputtering target members can be formed in a linear shape in plan view, and preferably in a linear shape in plan view. For example, when four flat sputtering target members are arranged on a backing plate in two rows by two rows, it is preferable that two straight spaces (gaps) are formed in a cross shape in plan view. In general, when four or more flat sputtering target members are arranged on a backing plate in M rows x N columns (M is a natural number of 2 or more, N is a natural number of 2 or more), (M-1) when viewed from the top It is preferable that (N-1) linear intervals (gap) are formed, and (M-1) x (N-1) cross-shaped intersection points are formed.

The spacing (gap) is preferably 1.0 mm or less in any place, more preferably 0.7 mm or less, and 0.5 from the viewpoint of reduction of sputter defects such as nodule or arcing, and homogenization of film properties in the narrower side. It is even more preferable that it is mm or less. However, if the distance (gap) between adjacent sputtering target members is too narrow, there is a risk of generating chipping in the target during the operation of removing the bonding material such as In solidified in the gap after bonding in the manufacturing process. It is preferable to be 0.2 mm or more in any place because there is a risk that the end faces of the sputtering target members that are opposed to each other come into contact with each other and the sputtering target member is cracked when the target is thermally expanded during sputtering of the target. , More preferably 0.3 mm or more.

The shapes, dimensions, and materials of the plurality of flat sputtering target members may be different, respectively, some may be the same, or all may be the same. However, for reasons of reduction of sputter defects such as nodules and arcing, homogenization of film properties, and reduction of cracks during sputtering by making the thermal expansion properties uniform, the shape, dimensions, and materials of the plurality of flat sputtering target members are all the same. It is desirable.

The planar shape of each flat sputtering target member is not particularly limited, but may be, for example, a polygonal shape, typically a rectangular shape, and more typically a rectangular shape. Each vertex of the polygon can be properly chamfered.

The planar size of each flat sputtering target member may be appropriately set according to the material, strength, and thickness of each sputtering target member, and is not particularly limited, but may be, for example, 100 to 10000 cm 2, and typically It can be 500 to 5000 cm 2.

The material of each sputtering target member is not particularly limited, but semiconductor materials such as silicon (Si) and germanium (Ge), Al ₂ O ₃ , PZT (Pb(Zr, Ti)O ₃ ), HfO ₂ , La ₂ O ₃ , Oxide ceramics such as MgO, ITO, IZO, ZTO, ITZO and IGZO, metal materials such as titanium, indium, vanadium, zirconium, molybdenum and tungsten, borides (e.g. TiB ₂ , CrB ₂ , WB), carbide Non-oxide ceramics such as (eg WC, TiW, SiC), nitride (eg TiN, AlN), and silicide (eg TiSi ₂ , CrSi ₂ ) may be mentioned. These may individually form each sputtering target member, or two or more types may be mixed to form each sputtering target member. In addition, compared with the target for a transparent conductive film, the oxide semiconductor target tends to have non-uniform characteristics of the sputtering film when the conductive backing plate is exposed through a gap between adjacent sputtering targets. For this reason, as a material of each sputtering target member, in particular, oxide semiconductors such as ITZO and IGZO can be suitably used. In addition, each sputtering target member may contain components other than these.

(3. Bonding material)

The bonding material serves to bond the backing plate and each sputtering target member by being disposed between the backing plate and each sputtering target member. The material of the bonding material may be appropriately selected in consideration of the material of the backing plate and each sputtering target member, but, for example, In, In-Sn alloy (eg, Sn 60 to 90 at%), Sn-Ag alloy (eg, Ag 3 To 20 at%), a Pb-Sn alloy (eg, Sn 50 to 95 at%), and a low melting point metal having good thermal conductivity and good conductivity (eg, a melting point of 130 to 250°C) may be used.

It is preferable that the bonding material does not exist in the gap between adjacent sputtering target members. This is because, if the bonding material is present in the gap between the adjacent sputtering target members, the bonding material is sputtered during sputtering, and the material constituting the bonding material may be mixed in the sputtering film.

(4. Mask material)

The mask material functions to prevent exposure of the backing plate to the gap by being disposed in the gap between adjacent sputtering target members. This makes it possible to prevent the backing plate from being sputtered during sputtering, and mixing of the material (typically copper) constituting the backing plate into the sputtering film. In a preferred embodiment, no bonding material is present in the gap, and the mask material is exposed.

If the material of the mask material is less sputtering than the component constituting the backing plate, the minimum effect of the present invention can be obtained. In addition, the material of the mask material has low reactivity with the bonding material, and when an oxide semiconductor is formed, even if it is mixed in a small amount into the formed oxide semiconductor thin film, it is a material that can reduce the effect on the TFT device characteristics compared to Cu. It is preferable to be.

For example, as the material of the mask material, Zn, Ti, or Sn can be used, or an alloy containing 80% by mass or more of any one or more of Zn, Ti, and Sn can be used. As described above, when the mask material is a metal material, the mask material may be provided in the form of, for example, a metal foil.

However, the material of the mask material is preferably insulating in order to prevent the backing plate component from being sputtered during sputtering and mixing into the sputtering film. Ceramics and resins are mentioned as an insulating material. When the mask material is ceramics or resin, the mask material may be provided in the form of a sheet, for example. The ceramics are not limited, but include alumina, silica, magnesia, and zirconia. The resin is not limited, but phenol resin, melamine resin, epoxy resin, urea resin, polyvinyl chloride, polyethylene, polypropylene, polystyrene, polyvinyl acetate, ABS resin, AS resin, acrylic resin, polyacetal, polycarbonate , Modified polyphenylene ether (PPE), polybutylene terephthalate, polyarylate, polysulfone, polyphenylene sulfide, polyether ether ketone, polyimide resin, polyamideimide resin, and fluorine resin. As the mask material, one of these may be used alone, or two or more of these may be used in combination. Among these, polyamideimide resins and polyimide resins are preferable, and polyamideimide resins are more preferable for reasons of hardness, strength, and ease of availability.

2, the upper surface of the mask material 108 is positioned below the lower surface of each sputtering target member 104, and a bonding material between the upper surface of the mask material 108 and the lower surface of each sputtering target member 104 It is preferable that (106) is interposed. This eliminates the direct contact of the mask material to the sputtering target member, and makes it possible to directly contact the bonding material over the entire lower surface of the sputtering target member.Therefore, when the thermal conductivity of the mask material is low, such as when an insulating mask material is used, backing The thermal conductivity of the sputtering target member from the plate is improved. Further, since the mask material is positioned below the lower surface of each sputtering target member, the effect that plasma is difficult to reach during sputtering and the mask material is difficult to sputter is also obtained.

The width of the mask material is preferably equal to or larger than the spacing between adjacent sputtering target members, and the latter aspect is more preferable. In other words, when the divided sputtering target is viewed in a plan view, it is preferable that the mask material is contained inside the sputtering target member than in each of the opposite side edges of the adjacent sputtering target members. Thereby, since the area in which the backing plate is concealed by the mask material becomes wider than the interval, the possibility that the backing plate is sputtered can be further reduced.

The lower limit of the thickness of the mask material is preferably 0.1 mm or more, and even more preferably 0.3 mm or more, from the viewpoint of the strength of the mask material and shape retention during work. From the viewpoint of suppressing deterioration of the thermal conductivity of the target, the upper limit of the thickness of the mask material is preferably 1.0 mm or less, more preferably 0.7 mm or less, and even more preferably 0.5 mm or less.

(5. Wire spacer)

A plurality of wire-shaped spacers are disposed between the backing plate and each sputtering target member in order to adjust the thickness of the bonding material. By using a wire-shaped spacer, there is an advantage that the sputtering target member can be made difficult to crack when placing the sputtering target member thereon. For example, in the case of using a plate-shaped spacer, since stress is locally applied from the edge of the spacer to the back surface of the sputtering target member, the localized stress is applied as a starting point, and the cooling process after bonding and sputtering There is a problem that the sputtering target member becomes liable to crack during the time. In contrast, since the wire-shaped spacer has a round shape such as a circle, an ellipse or an ellipse in cross section, even if a sputtering target member is disposed thereon, local stress is difficult to be applied to the back surface of the sputtering target member. It is also possible to obtain a buffering effect by the bonding material existing around the upper spacer. For this reason, by using a wire-shaped spacer, it is possible to make it difficult to crack the sputtering target member when the sputtering target member is placed thereon.

The lower limit of the diameter of each of the plurality of wire-shaped spacers is preferably 0.1 mm or more, more preferably 0.3 mm or more, and even more preferably 0.5 mm or more from the viewpoint of reducing the local adaptability to the back surface of the sputtering target member. Do. The upper limit of the diameter of each of the plurality of wire-like spacers is preferably 1.0 mm or less, and even more preferably 0.7 mm or less, from the viewpoint of not deteriorating the heat transfer efficiency between the backing plate and the target. Here, the diameter of each wire-shaped spacer refers to a diameter equivalent to a circle, that is, the diameter of a circle having the same cross-sectional area as that of the wire-shaped spacer.

The length of each of the plurality of wire-like spacers 110 in the thickness direction of the mask material (when the cross-section of the wire-like spacers is circular, the same as the diameter of the circle) is preferably larger than the thickness of the mask material 108 Do (see Fig. 2). Thereby, the upper surface of the mask material 108 is located below the lower surface of each sputtering target member 104, and the bonding material 106 is located between the upper surface of the mask material 108 and the lower surface of each sputtering target member 104. The above-described configuration that is interposed can be easily achieved. The length of each of the plurality of wire-like spacers in the thickness direction of the mask material is preferably 0.1 mm or more than the thickness of the mask material, and 0.2 mm or more, in order to avoid the risk that the height of the target is determined by the thickness of the mask material. It is even more preferable. If the thickness of the bonding material between the target and the backing plate is too thick, the heat conduction efficiency deteriorates, so the thickness of each of the plurality of wire-like spacers in the thickness direction of the mask material is preferably 1.0 mm or less, and more preferably 0.5 mm or less. Do.

In addition, it is preferable that the wire-shaped spacer is disposed at a position not overlapping with the mask material. When the wire-shaped spacer is disposed at a position where it overlaps the mask material, that is, the wire-shaped spacer is disposed so as to sit on the mask material, or, conversely, it is disposed so as to pass under the wire-shaped spacer. The sputtering surface of the sputtering target member is apt to be inclined with respect to the surface of the backing plate, and it becomes difficult to produce a divided sputtering target of the same plane without a step or undulation in the upper surface height between a plurality of sputtering target members. In addition, adjustment of the gap between the sputtering target members is also difficult, a small location between the sputtering target members is partially generated, and a problem that the sputtering target member is easily cracked during sputtering may also arise.

The material of the wire-shaped spacer preferably has high heat transfer characteristics in order not to interfere with heat transfer between the backing plate and the sputtering target member. In addition, in order to facilitate handling during the bonding operation, those that are cemented carbide and those that do not have plasticity should be avoided. From this point of view, the material of the wire-shaped spacer is preferably a metal selected from the group consisting of copper, titanium, iron, aluminum, nickel and chromium, or an alloy containing at least one of them, and is copper, titanium, aluminum. It is more preferable that it is, and it is even more preferable that it is copper.

When the divided sputtering target is viewed in a plan view, it is preferable that none of the plurality of wire-shaped spacers have a portion protruding from the outer peripheral side surface of the sputtering target member. This is to prevent unexpected adverse effects on the properties of the sputtering film due to sputtering of the wire-shaped spacers.

When one specific wire-shaped spacer does not have a portion extending from the outer peripheral side surface of the sputtering target member, the wire-shaped spacer disposed under the flat sputtering target member when the flat sputtering target member is viewed in plan Both ends of can be arranged as follows, for example.

(1) A method of arranging so that both ends of one wire-like spacer are located inside the outer circumferential side surface of the flat sputtering target member (refer to the wire-like spacer indicated by reference numeral 110c in FIG. 1).

(2) A method in which both ends of a single wire-shaped spacer are disposed so as to be positioned immediately below (on the same plane as the outer circumferential side) a portion of the outer circumferential side of the sputtering target member where the mask material is not disposed (reference numeral 110a in Fig. 1) , 110b and 110d).

(3) One end of the wire-shaped spacer is disposed so as to be located inside the outer circumferential side of the flat sputtering target member, and the other end of the wire-shaped spacer is not disposed on the outer circumferential side of the sputtering target member. A method of placing it so that it is located directly underneath (on the same plane as the outer circumferential side) the part that is not.

Among these methods, the methods of (2) and (3) are preferable, and the method of (2) is from the viewpoint that the wire-shaped spacer can be stably disposed at a predetermined position without extending and protruding from the outer peripheral side surface of the sputtering target member. This is more preferable.

In the case of the method (1), since both ends of the wire-shaped spacer are inside the outer peripheral side surface of the sputtering target member, it is difficult to temporarily fix the wire-shaped spacer for positioning. Therefore, there is a fear that the wire-shaped spacer may be shifted from a predetermined position.

In the case of the method (3), one end of the wire-shaped spacer is disposed so as to be positioned directly under (on the same plane as the outer circumferential side) a portion of the outer circumferential side of the sputtering target member where the mask material is not disposed. Such an end is initially disposed so as to protrude from the outer peripheral side surface of the sputtering target member scheduled to be disposed on the wire-shaped spacer when viewed in plan view, and is temporarily fixed to the backing plate using the protruding end of the wire, and then, Since it can be formed by cutting and removing the protruding end portions, the advantage of higher positioning accuracy than the method (1) is obtained. However, in the case of the method (3), the other end of the wire-shaped spacer is located inside the outer circumferential side of the flat plate sputtering target member and cannot be temporarily fixed, so there is a fear that the wire-shaped spacer may deviate from a predetermined position.

In the case of the method (2), both ends of the wire-shaped spacer are disposed so as to be positioned directly under (on the same plane as the outer circumferential side) a portion of the outer circumferential side of the sputtering target member where the mask material is not disposed. In this case, both ends of the wire-shaped spacer are initially disposed so as to protrude from the outer circumferential side of the sputtering target member to be disposed on the wire-shaped spacer when viewed from the top, and use both ends of the wire-shaped spacer to extend and protrude to the backing plate. It can be formed by temporarily fixing, and then cutting and removing both ends extending and protruding thereafter. For this reason, an advantage is obtained that the positioning accuracy can be made higher than that of the method (3). It is preferable that all the wire-shaped spacers are arranged by the method of (2). In order to arrange all the wire-shaped spacers by the method (2), it is preferable to arrange the sputtering target members in 2 rows x N columns (N is a natural number of 1 or more).

A more specific method of arranging the wire-shaped spacers by the method (2) will be exemplarily described. In this method, when at least one of the plurality of flat plate sputtering target members has a rectangular shape in plan view, at least one of the plurality of wire-shaped spacers is provided with four sides of the rectangular shape sputtering target member when viewed from the at least one plane. It includes arranging such that both ends are located immediately below the outer circumferential side constituting one side. In this case, in order to more effectively prevent the positional shift of the wire-like spacer, the wire-like spacer is disposed between the backing plate and the sputtering target member by being bent in a V-shape when viewed from a plane where the ends are tapered as they are separated from both ends. Or (refer to the wire-shaped spacer of reference numeral 110a in FIG. 1), or bent in an isosceles trapezoidal shape when viewed from a plane where the ends are tapered as they are separated from both ends (refer to the wire-shaped spacer of reference numeral 110d in FIG. 1). Do. The former method is more preferable because the former method has a higher effect of preventing the positional shift of the wire-shaped spacer.

It is preferable that the wire-shaped spacer is disposed so as to stably mount the flat sputtering target member. Therefore, the wire-shaped spacer is disposed between the backing plate and the sputtering target member, bent in a V-shape as viewed from a plane where the ends taper as they are spaced apart from the both ends, or a plane whose ends taper as they are separated from the both ends. When the wire-shaped spacer is arranged so that both ends are located immediately below the outer peripheral side surface constituting one of the four sides of the rectangular sputtering target member in plan view, such as when it is bent and arranged in an isosceles trapezoid as viewed from, It is preferable to arrange a wire-shaped spacer so that the center of gravity of the sputtering target member is located inside a figure (e.g., a V-shape or a trapezoid) drawn by the wire-shaped spacer (wire-shaped spacers of reference numerals 110a and 110d in FIG. 1) Reference).

Another more specific method of arranging the wire-shaped spacers by the method (2) will be exemplarily described. In this method, when at least one of the plurality of flat plate sputtering target members has a rectangular shape in plan view, at least one of the plurality of wire-shaped spacers is provided with four sides of the rectangular shape sputtering target member when viewed from the at least one plane. Among them, a method of arranging each end to be positioned immediately below each outer circumferential side constituting two adjacent sides may be mentioned (refer to a wire-shaped spacer of 110b in FIG. 1). In this case, the wire-shaped spacer can be arranged in an L-shape in plan view between the backing plate and the at least one planar view of the rectangular sputtering target member (refer to the wire-shaped spacer at 110b in FIG. 1 ).

Also in this case, it is preferable that the wire-shaped spacer is arranged so that the flat plate-shaped sputtering target member can be stably mounted. From this point of view, at least two wire-shaped spacers are arranged so that each stage is located immediately below each outer peripheral side surface constituting two adjacent sides of the four sides of the rectangular sputtering target member when viewed from one plane. It is preferable to arrange it so that the center of gravity of the sputtering target member is fitted by the wire-shaped spacer (refer to the wire-shaped spacer at 110b in Fig. 1).

<B. Split sputtering target manufacturing method>

The method for producing a divided sputtering target according to an embodiment of the present invention is, for example, the following steps:

Step a of arranging the mask material 108 on the backing plate 102 (Fig. 3 (a)),

Step b of disposing a plurality of wire-shaped spacers 110 for adjusting the thickness of the bonding material 106 at a position that does not overlap with the mask material 108 on the backing plate 102 (FIG. 3(b)),

By heating the backing plate 102 on which the mask material 106 and the wire-shaped spacer 110 are disposed and a plurality of flat sputtering target members 104, a bonding material 106 is applied to each bonding surface. Step c (Fig. 3 (c)) and,

Step d of bonding the backing plate 102 on which the mask material 108 and the wire-shaped spacer 110 are disposed and the flat sputtering target member 104 through a melted bonding material 106 (Fig. d)) and,

After that, the process e of solidifying the bonding material 106 by cooling

Includes doing.

In step b, the wire-shaped spacer is disposed so as to have a portion protruding from a portion where the mask material is not disposed among the outer peripheral side surfaces of the sputtering target member to be disposed thereon in plan view, and the extended protruding portion is , It is preferable to temporarily fix the sputtering target member to the backing plate at a position that does not overlap with the sputtering target member to be disposed. This is to increase the positioning accuracy of the wire-shaped spacers. There is no restriction|limiting in particular in the method of temporarily fixing, For example, a method of temporarily fixing the said extended protruding part of a wire-shaped spacer to a backing plate using an adhesive tape is mentioned. It is preferable that the adhesive tape can be easily peeled without damaging the backing plate. In FIG. 4, in step b of manufacturing the divided sputtering target according to the embodiment of FIG. 1, before bonding a plurality of flat plate sputtering target members through a bonding material, a plurality of wires are formed using an adhesive tape 109. A schematic plan view showing a state when the spacer is temporarily fixed is shown.

In step c, as a method of applying the bonding material to the bonding surface of the backing plate and the plurality of flat sputtering target members, any known method may be employed. For example, ultrasonic welding, plating, vapor deposition, etc. are mentioned. Among these, ultrasonic welding is preferable because of the high bonding strength.

It is preferable that the extended protruding portion of the wire-shaped spacer used at the time of temporary fixing is cut and removed after step e is performed. Specifically, it is preferable to cut and remove the extended protruding portion so that the cut surface of the wire-shaped spacer is positioned immediately below the portion of the outer peripheral side surface of the sputtering target member where the mask material is not disposed. Moreover, even when the mask material protrudes from the outer peripheral side surface of each sputtering target member, it is preferable to cut and remove the protruding part. Thereby, the cut surface of the mask material is positioned directly below the outer peripheral side surface of the sputtering target member (on the same plane as the outer peripheral side surface).

After the step e, it is preferable to perform a step of exposing the mask material 108 by removing the bonding material 106 exposed to the gap between the adjacent sputtering target members again (Fig. 3(e)). . As a method of removing a bonding material, a method of scraping using a gap bonding material removal jig is mentioned, for example. As the gap bonding material removal jig, one having a sharp blade can be used so that the bonding material can be scraped off by entering the gap between adjacent sputtering target members. It is preferable that the tip of the blade has a hook shape so that the bonding material can be scraped off efficiently. The gap bonding material removal jig can be made of, for example, a metal (for example, stainless steel) or PEEK (polyetheretherketone, etc.) in order not to damage the backing plate. Removal of the bonding material From the viewpoint of improvement of workability and improvement of production efficiency, removal of the bonding material is performed when the bonding material is cooled, preferably when the bonding material is at a temperature of 80 to 150°C, and when it is at a temperature of 90 to 130°C. It is more preferable to carry out, and even more preferable to carry out at the temperature of 100-120 degreeC. If the temperature of the bonding material is too low, the bonding material becomes hard and the workability of the removal operation deteriorates.

<C. Film formation method>

According to an embodiment of the present invention, a film forming method including sputtering a divided sputtering target is provided. The sputtering method is not limited, but an RF magnetron sputtering method, a DC magnetron sputtering method, an AC magnetron sputtering method, a pulse DC magnetron sputtering method, and the like can be suitably used.

[Example]

Hereinafter, examples for facilitating understanding of the present invention and its advantages are shown, but the present invention is not limited to the examples.

<1. Production of split sputtering target>

(Backing plate)

According to the test number, a copper backing plate having a rectangular shape in plan view of the dimensions shown in Table 1 was prepared.

(Mask materials)

As a mask material, a polyamideimide resin sheet (thickness 0.3 mm) of Toray Plastics Seiko Co., Ltd. product name TPS TI-5013 was prepared.

(Spacer)

As a wire-shaped spacer, a circular copper wire having a cross section of 0.5 mm in diameter was prepared.

As a plate-shaped spacer, a copper plate having a length of 20 mm x a width of 10 mm x a thickness of 0.5 mm was prepared.

(Bonding material)

As a bonding material, an indium metal was prepared.

(Sputtering target member)

As a sputtering target member, a IGZO-made sputtering target member in the form of a rectangular plate having a length of 63 mm x a width of 254 mm x a thickness of 6 mm was prepared.

(Examples 1 to 7)

Position and fix the mask material 108 on the backing plate 102 with double-sided adhesive tape (Teraoka Seisakusho Co., Ltd. product name double-sided Kapton tape) and do not overlap with the mask material 108 on the backing plate 102 A plurality of wire-shaped spacers 110 for adjusting the thickness of the bonding material 106 were disposed.

Next, in Examples 1 to 6, the wire-shaped spacer 110 is a portion extending from a portion of the outer peripheral side of the sputtering target member 104 scheduled to be disposed thereon in plan view, from the portion where the mask material is not disposed. Arranged so as to have, and the extended protruding portion was temporarily fixed to the backing plate at a position not overlapping with the sputtering target member to be disposed (see FIGS. 5A, 6A, 7A, 8A, 9A, and 10A). For temporary fixing, a single-sided adhesive tape (Kapton Tape, manufactured by Teraoka Seisakusho) was used. In Example 7, it was not temporarily fixed.

Subsequently, the backing plate 102 on which the mask material 108 and the wire-shaped spacer 110 are disposed, and a plurality of flat sputtering target members 104 are heated according to the test number, and the bonding material ( 106) was applied by ultrasonic welding.

Subsequently, the backing plate 102 on which the mask material 108 and the wire-shaped spacer 110 are disposed and a plurality of flat sputtering target members 104 are bonded through a melted bonding material 106, and then Then, the bonding material 106 was solidified by cooling. During cooling of the bonding material, when the bonding material is in the range of 80 to 150°C, the bonding material 106 exposed to the gap 103 between the adjacent sputtering target members 104 is removed by using a SUS gap bonding material removal jig. The mask material 108 was exposed by removing by a scraping method. Next, in Examples 1 to 6, the extended protruding portion of the wire-shaped spacer 108 used at the time of temporary fixation was positioned immediately below the portion of the outer peripheral side of the sputtering target member where the mask material was not disposed. It cuts and removes using a cutter etc. so as to do, and the adhesive tape was peeled after that. Moreover, the protruding part from the outer peripheral side surface of a mask material was cut similarly.

In this way, the divided sputtering targets of Examples 1 to 7 in which a plurality of sputtering target members were arranged by the method described in Table 1 were produced (FIG. 5B, FIG. 6B, FIG. 7B, FIG. 8B, FIG. 9B, FIG. 10B, FIG. 11).

(Comparative Example 1)

On the backing plate 102, the mask material 108 is placed and fixed with a double-sided adhesive tape (Teraoka Seisakusho Co., Ltd. product name double-sided Kapton tape), and in a position not overlapping with the mask material 108 on the backing plate 102. A plurality of plate-shaped spacers 110 for adjusting the thickness of the bonding material 106 were disposed. At this time, the plate-shaped spacer 110 was fixed to the backing plate with an adhesive.

Subsequently, the backing plate 102 on which the mask material 108 and the plate spacer 110 are disposed, and the plurality of flat sputtering target members 104 are heated, and the bonding material 106 is ultrasonically welded to each of the bonding surfaces. Applied by

Subsequently, the backing plate 102 on which the mask material 108 and the plate-shaped spacer 110 are disposed and a plurality of plate-shaped sputtering target members 104 are bonded through a melted bonding material 106, and then, It cooled and solidified the bonding material 106.

Subsequently, the bonding material 106 exposed in the gap 103 between the adjacent sputtering target members 104 is removed by a method of scraping using a gap bonding material removal jig made of SUS, and the mask material 108 Exposed.

In this way, a divided sputtering target of Comparative Example 1 in which a plurality of sputtering target members were arranged by the method described in Table 1 was produced (see Fig. 12).

(Comparative Example 2)

A mask material 108 was disposed on the backing plate 102.

Subsequently, the backing plate 102 on which the mask material 108 was disposed and the plurality of flat sputtering target members 104 were heated, and the bonding material 106 was applied to each of the bonding surfaces by ultrasonic welding.

Subsequently, the backing plate 102 on which the mask material 108 is disposed and the plurality of flat sputtering target members 104 are bonded through a melted bonding material 106, and then cooled to bond the bonding material 106 ) Solidified.

Subsequently, the bonding material 106 exposed in the gap 103 between the adjacent sputtering target members 104 is removed by a method of scraping using a gap bonding material removal jig made of SUS, and the mask material 108 Exposed.

In this way, a divided sputtering target of Comparative Example 2 in which a plurality of sputtering target members were arranged by the method described in Table 1 was produced (see Fig. 13).

<2. Characteristics evaluation>

The following evaluation was performed on the divided sputtering targets of Examples and Comparative Examples produced by the above procedure. Table 1 shows the results.

(1) presence or absence of cracks

Each divided sputtering target was installed in a sputtering apparatus, magnetron sputtering was performed with an input power of 1.5 kW, and a film was formed on a glass substrate for 50 minutes. After that, the presence or absence of a crack in each sputtering target member was visually confirmed. Evaluation was performed according to the following criteria.

5: No cracks were observed.

3: In this test, no crack was observed, but since no bonding material was interposed between the target member and the mask material, the thermal conductivity is locally deteriorated, and there is a risk of cracking the target.

1: A crack has occurred.

(2) Step evaluation

Among the plurality of sputtering target members, the difference in height (step difference of the piece joint) between the side surfaces of which the sputtering target members adjacent to each other face each other was confirmed by measuring the step difference using a dips gauge. Evaluation was performed with respect to the measured step according to the following criteria.

5: Very good (less than 0.05mm at all measuring points (all piece joints))

4: Good (less than 0.10 mm in all measurement locations)

3: Within the standard (less than 0.20 mm at all measuring points)

2: Outside the standard (0.20㎜ or more at one place)

1: Outside the standard (0.20㎜ or more in multiple places)

(3) Spacer position misalignment

It was performed according to the following criteria as a visual inspection and a flaw detection by ultrasonic flaw detection.

5: Spacer almost no deviation from the target position

4: Spacer slightly deviated from the target position

3: The spacer is easily shifted from the target position, but satisfies the following criteria

Criterion: No idea of the following (A) to (B) is confirmed.

(A) The spacer overlapped with the mask material.

(B) A spacer protrudes outside of the sputtering target member.

For reference, Fig. 14 shows a flaw diagram showing the arrangement of a plurality of wire-like spacers in the divided sputtering target according to the fourth embodiment.

<3. Discussion>

In Comparative Example 1, since the spacer was not used, the two sides of the sputtering target member on the side close to the four corners of the backing plate on which the mask material was not disposed were liable to sink, and the step difference evaluation was poor.

In Comparative Example 2, since the plate-shaped spacer was used, the sputtering target member was cracked by locally applying stress to the back surface of the sputtering target member from the edge portion of the spacer.

On the other hand, in Examples 1 to 7, cracks were suppressed by using a wire-shaped spacer, and a step difference was also small. In particular, in Examples 1 to 5 in which both ends of the wire were temporarily fixed, the positional shift of the spacer was also small, and the workability was also excellent.

100: split sputtering target
102: backing plate
103: gap
104: sputtering target member
106: bonding material
108: mask material
109: adhesive tape
110 (110a, 110b, 110c, 110d): wire-shaped spacer

Claims (20)

A plurality of flat sputtering target members arranged with a gap on the backing plate,
A bonding material disposed between the backing plate and each sputtering target member,
A mask material disposed in the gap between adjacent sputtering target members,
Between the backing plate and each sputtering target member, a plurality of wire-shaped spacers for adjusting the thickness of the bonding material, disposed at a position not overlapping with the mask material, are provided.
Equipped, split sputtering target. The divided sputtering target according to claim 1, wherein when viewed in a plan view, all of the plurality of wire-like spacers do not have a portion extending from the outer peripheral side surface of the sputtering target member. The divided sputtering according to claim 1 or 2, wherein at least one of the plurality of wire-shaped spacers has one end or both ends located immediately below a portion of the outer peripheral side surface of the sputtering target member where the mask material is not disposed. target. The method of claim 3, wherein at least one of the plurality of flat sputtering target members has a rectangular shape in plan view, and at least one of the plurality of wire-shaped spacers has a rectangular shape when viewed from the at least one plane, and four sides of the sputtering target member A split sputtering target in which both ends are located immediately below the outer circumferential side constituting one side, or each end is located immediately below each outer circumferential side constituting two adjacent sides. The backing plate of claim 4, wherein at least one of the plurality of wire-shaped spacers is positioned immediately below the outer peripheral side surface constituting one of four sides of the rectangular sputtering target member when viewed from the at least one plane, and And the at least one planar view of a rectangular sputtering target member, the divided sputtering target disposed in a V-shape when viewed in a plane where the ends are tapered as they are spaced apart from the both ends. The backing plate of claim 4, wherein at least one of the plurality of wire-shaped spacers is positioned immediately below the outer peripheral side surface constituting one of four sides of the rectangular sputtering target member when viewed from the at least one plane, and And the at least one planar view of the rectangular sputtering target member, the divided sputtering target disposed in an isosceles trapezoidal shape as viewed from a plane where the ends are tapered as they are spaced apart from the both ends. The method of claim 4, wherein at least one of the plurality of wire-shaped spacers has each end immediately below each outer peripheral side surface constituting two adjacent sides of the four sides of the rectangular sputtering target member when viewed from the at least one plane. A divided sputtering target positioned and arranged in an L-shape when viewed in a plan view between a backing plate and the at least one rectangular sputtering target member viewed in plan view. The divided sputtering target according to any one of claims 1 to 7, wherein a plurality of planar sputtering target members are formed of an oxide semiconductor. The divided sputtering target according to any one of claims 1 to 8, wherein the plurality of wire-shaped spacers have a diameter of 0.1 mm to 1.0 mm. The method according to any one of claims 1 to 9, wherein the material of the plurality of wire-shaped spacers contains a metal selected from the group consisting of copper, titanium, iron, aluminum, nickel, and chromium, or one or more thereof. An alloy, split sputtering target. The divided sputtering target according to any one of claims 1 to 10, wherein the upper surface of the mask material is located below the lower surface of each sputtering target member, and a bonding material is interposed between the upper surface of the mask material and the lower surface of each sputtering target member. . The divided sputtering target according to claim 11, wherein the length of the plurality of wire-shaped spacers in the thickness direction of the mask material is larger than the thickness of the mask material. The divided sputtering target according to claim 11 or 12, wherein the width of the mask material disposed in the gap is equal to or larger than the gap between adjacent sputtering target members. The method according to any one of claims 1 to 13, wherein the plurality of flat sputtering target members each have a rectangular shape when viewed in plan, and are arranged in 2 rows x N columns (N is a natural number of 1 or more) on the backing plate. , Split sputtering target. The divided sputtering target according to any one of claims 1 to 14, wherein the material of the mask material is insulating. The divided sputtering target according to any one of claims 1 to 15, wherein a mask material is exposed in the gap. A film forming method comprising sputtering the divided sputtering target according to any one of claims 1 to 16. Step a of arranging the mask material on the backing plate, and
Step b of arranging a plurality of wire-shaped spacers for adjusting the thickness of the bonding material at a position that does not overlap with the mask material on the backing plate; and
Step c of heating the backing plate on which the mask material and the wire-like spacers are disposed and a plurality of flat plate-like sputtering target members to apply a bonding material to each of the bonding surfaces; and
Step d of bonding the backing plate on which the mask material and the wire-like spacers are disposed and a plurality of flat plate-like sputtering target members through a molten bonding material,
After that, the process e of solidifying the bonding material by cooling
The method for producing the divided sputtering target according to any one of claims 1 to 16 including. The method according to claim 18, wherein in step b, the wire-shaped spacer is disposed so as to have a portion extending from a portion where the mask material is not disposed among the outer peripheral side surfaces of the sputtering target member to be disposed thereon in plan view, A method of manufacturing a divided sputtering target, comprising temporarily fixing the extended protruding portion to a backing plate at a position not overlapping with the sputtering target member to be disposed. The process according to claim 19, wherein after performing the step e, the part protruding is cut and removed so that the cut surface is located immediately below the part of the outer peripheral side of the sputtering target member where the mask material is not disposed. The method for producing a divided sputtering target further comprising.

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