KR20200112673A - Etching composition and etching method using the same - Google Patents
Etching composition and etching method using the same Download PDFInfo
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- KR20200112673A KR20200112673A KR1020200028007A KR20200028007A KR20200112673A KR 20200112673 A KR20200112673 A KR 20200112673A KR 1020200028007 A KR1020200028007 A KR 1020200028007A KR 20200028007 A KR20200028007 A KR 20200028007A KR 20200112673 A KR20200112673 A KR 20200112673A
- Authority
- KR
- South Korea
- Prior art keywords
- etching
- weight
- composition
- present
- film
- Prior art date
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- 238000005530 etching Methods 0.000 title claims abstract description 221
- 239000000203 mixture Substances 0.000 title claims abstract description 133
- 238000000034 method Methods 0.000 title claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims abstract description 75
- 239000002184 metal Substances 0.000 claims abstract description 75
- -1 amine compounds Chemical class 0.000 claims abstract description 49
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000003112 inhibitor Substances 0.000 claims abstract description 39
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical class OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000000654 additive Substances 0.000 claims abstract description 33
- 230000008569 process Effects 0.000 claims abstract description 28
- 150000002222 fluorine compounds Chemical class 0.000 claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- UYTPUPDQBNUYGX-UHFFFAOYSA-N guanine Chemical compound O=C1NC(N)=NC2=C1N=CN2 UYTPUPDQBNUYGX-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- GFFGJBXGBJISGV-UHFFFAOYSA-N Adenine Chemical compound NC1=NC=NC2=C1N=CN2 GFFGJBXGBJISGV-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229930024421 Adenine Natural products 0.000 claims abstract description 8
- 229960000643 adenine Drugs 0.000 claims abstract description 8
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- 239000010949 copper Substances 0.000 claims description 53
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 48
- 229910052802 copper Inorganic materials 0.000 claims description 41
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 37
- 229910052750 molybdenum Inorganic materials 0.000 claims description 31
- 239000011733 molybdenum Substances 0.000 claims description 31
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 25
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 22
- 230000000996 additive effect Effects 0.000 claims description 21
- 239000003002 pH adjusting agent Substances 0.000 claims description 15
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 14
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 13
- 239000002738 chelating agent Substances 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- 229910019142 PO4 Inorganic materials 0.000 claims description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 7
- 239000010452 phosphate Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 150000003973 alkyl amines Chemical class 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 5
- 150000002391 heterocyclic compounds Chemical group 0.000 claims description 5
- 229910017855 NH 4 F Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 125000003277 amino group Chemical group 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000011135 tin Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 125000002843 carboxylic acid group Chemical group 0.000 claims description 3
- 125000005842 heteroatom Chemical group 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 239000011593 sulfur Substances 0.000 claims description 3
- 229910016569 AlF 3 Inorganic materials 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 90
- 239000010410 layer Substances 0.000 description 44
- 230000000052 comparative effect Effects 0.000 description 25
- 239000000758 substrate Substances 0.000 description 14
- 125000004432 carbon atom Chemical group C* 0.000 description 13
- 229910052723 transition metal Inorganic materials 0.000 description 13
- 150000003624 transition metals Chemical class 0.000 description 13
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 8
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- 238000000354 decomposition reaction Methods 0.000 description 7
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- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
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- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000003381 stabilizer Substances 0.000 description 4
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- YYRMJZQKEFZXMX-UHFFFAOYSA-N calcium;phosphoric acid Chemical compound [Ca+2].OP(O)(O)=O.OP(O)(O)=O YYRMJZQKEFZXMX-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 230000002401 inhibitory effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002426 superphosphate Substances 0.000 description 3
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 2
- PQHYOGIRXOKOEJ-UHFFFAOYSA-N 2-(1,2-dicarboxyethylamino)butanedioic acid Chemical compound OC(=O)CC(C(O)=O)NC(C(O)=O)CC(O)=O PQHYOGIRXOKOEJ-UHFFFAOYSA-N 0.000 description 2
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 125000000753 cycloalkyl group Chemical group 0.000 description 2
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- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 description 2
- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 description 2
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 2
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 2
- 229910052939 potassium sulfate Inorganic materials 0.000 description 2
- 235000011151 potassium sulphates Nutrition 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 description 2
- 235000011152 sodium sulphate Nutrition 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 150000003536 tetrazoles Chemical class 0.000 description 2
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 2
- 125000006732 (C1-C15) alkyl group Chemical group 0.000 description 1
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 description 1
- PVOAHINGSUIXLS-UHFFFAOYSA-N 1-Methylpiperazine Chemical compound CN1CCNCC1 PVOAHINGSUIXLS-UHFFFAOYSA-N 0.000 description 1
- BAXOFTOLAUCFNW-UHFFFAOYSA-N 1H-indazole Chemical compound C1=CC=C2C=NNC2=C1 BAXOFTOLAUCFNW-UHFFFAOYSA-N 0.000 description 1
- KQLXBKWUVBMXEM-UHFFFAOYSA-N 2-amino-3,7-dihydropurin-6-one;7h-purin-6-amine Chemical compound NC1=NC=NC2=C1NC=N2.O=C1NC(N)=NC2=C1NC=N2 KQLXBKWUVBMXEM-UHFFFAOYSA-N 0.000 description 1
- 125000003229 2-methylhexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- WFCSWCVEJLETKA-UHFFFAOYSA-N 2-piperazin-1-ylethanol Chemical compound OCCN1CCNCC1 WFCSWCVEJLETKA-UHFFFAOYSA-N 0.000 description 1
- GEHBUYNXWNQEIU-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC=1N=NNN=1.NC=1N=NNN=1 GEHBUYNXWNQEIU-UHFFFAOYSA-N 0.000 description 1
- 125000003469 3-methylhexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
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- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- 229910020808 NaBF Inorganic materials 0.000 description 1
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- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
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- 125000003158 alcohol group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
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- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
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- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 125000004855 decalinyl group Chemical group C1(CCCC2CCCCC12)* 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- AWADHHRPTLLUKK-UHFFFAOYSA-N diazanium sulfuric acid sulfate Chemical compound [NH4+].[NH4+].OS(O)(=O)=O.[O-]S([O-])(=O)=O AWADHHRPTLLUKK-UHFFFAOYSA-N 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 description 1
- 235000019797 dipotassium phosphate Nutrition 0.000 description 1
- 229910000396 dipotassium phosphate Inorganic materials 0.000 description 1
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 description 1
- 229910000397 disodium phosphate Inorganic materials 0.000 description 1
- 235000019800 disodium phosphate Nutrition 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- BTCSSZJGUNDROE-UHFFFAOYSA-N gamma-aminobutyric acid Chemical compound NCCCC(O)=O BTCSSZJGUNDROE-UHFFFAOYSA-N 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- XMYQHJDBLRZMLW-UHFFFAOYSA-N methanolamine Chemical compound NCO XMYQHJDBLRZMLW-UHFFFAOYSA-N 0.000 description 1
- 229940087646 methanolamine Drugs 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 125000002911 monocyclic heterocycle group Chemical class 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000001997 phenyl group Chemical class [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 235000011008 sodium phosphates Nutrition 0.000 description 1
- VQBIMXHWYSRDLF-UHFFFAOYSA-M sodium;azane;hydrogen carbonate Chemical compound [NH4+].[Na+].[O-]C([O-])=O VQBIMXHWYSRDLF-UHFFFAOYSA-M 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/14—Nitrogen-containing compounds
- C23F11/149—Heterocyclic compounds containing nitrogen as hetero atom
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/16—Sulfur-containing compounds
- C23F11/165—Heterocyclic compounds containing sulfur as hetero atom
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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Abstract
Description
본 발명은 식각 조성물 및 이를 이용하는 식각방법에 관한 것으로, 보다 상세하게는 식각 조성물, 이를 이용하는 금속막의 식각방법 및 본 발명의 식각 조성물을 이용하여 수행되는 공정을 포함하는 반도체 소자의 제조방법에 관한 것이다.The present invention relates to an etching composition and an etching method using the same, and more particularly, to an etching composition, an etching method of a metal film using the same, and a method of manufacturing a semiconductor device including a process performed using the etching composition of the present invention. .
반도체 장치 및 TFT-LCD 등의 미세 회로는 기판상에 형성된 알루미늄, 알루미늄 합금, 구리 및 구리 합금 등의 도전성 금속막 또는 실리콘 산화막, 실리콘 질화막 등의 절연막에 포토레지스트를 균일하게 도포한 다음, 패턴이 새겨진 마스크를 통하여 빛을 조사한 후 현상을 통하여 원하는 패턴의 포토레지스트를 형성시키고 건식 또는 습식 식각으로 포토레지스트 하부에 있는 금속막 또는 절연막에 패턴을 전사한 후, 필요없는 포토레지스트를 박리 공정에 의해 제거하는 일련의 리소그래피 공정을 거쳐 완성된다. For microcircuits such as semiconductor devices and TFT-LCDs, a photoresist is uniformly applied to a conductive metal film such as aluminum, aluminum alloy, copper and copper alloy formed on a substrate, or an insulating film such as a silicon oxide film or a silicon nitride film, and then the pattern is formed. After irradiating light through the engraved mask, a photoresist of a desired pattern is formed through development, and the pattern is transferred to the metal film or insulating film under the photoresist by dry or wet etching, and then unnecessary photoresist is removed by a peeling process. It is completed through a series of lithography processes.
반도체 장치 및 TFT-LCD의 기판을 제조하기 위해 TFT의 게이트와 데이터 라인 전극용 배선 재료로 알루미늄, 알루미늄 합금층 및 크롬이 흔히 사용되었으나, 대형 디스플레이 구현을 위해서는 전극용 배선의 저항 감소가 필수적이며, 이를 위하여 저항이 낮은 금속인 구리를 배선 형성에 사용하고자 하는 시도가 진행되고 있다. In order to manufacture semiconductor devices and TFT-LCD substrates, aluminum, aluminum alloy layers and chromium were commonly used as wiring materials for gates and data line electrodes of TFTs, but for realizing large displays, it is essential to reduce the resistance of wiring for electrodes. To this end, attempts have been made to use copper, which is a metal with low resistance, for wiring.
그러나, 구리는 유리 기판 및 실리콘 절연막과 접착력이 낮고 실리콘 막으로 확산되는 문제점이 있어 티타늄, 몰리브덴 등을 구리막의 하부 배리어 금속으로 사용하고 있다.However, since copper has a low adhesion to the glass substrate and the silicon insulating film and diffuses into the silicon film, titanium, molybdenum, or the like is used as a lower barrier metal of the copper film.
이에 따라 하부 배리어 금속막과 구리막의 식각에 사용되는 식각 조성물에 대한 연구도 활발하게 진행되고 있다.Accordingly, studies on etching compositions used for etching the lower barrier metal layer and the copper layer are also actively being conducted.
배리어 금속이 티타늄, 몰리브덴 합금인 경우의 식각 공정은 티타늄의 화학적 성질로 인해 특정 이온 또는 특정 조건으로만 식각해야되는 단점을 가지고 있으며, 배리어 금속이 몰리브덴인 경우의 식각 공정은 구리막과 몰리브덴 막과의 접착력이 떨어지는 단점을 가지고 있다. 특히 구리 막과 몰리브덴 막의 접착력이 떨어지는 부분에 식각 조성물의 침투에 의한 과식각 현상이 심화된다.When the barrier metal is a titanium or molybdenum alloy, the etching process has a disadvantage of having to be etched only with specific ions or specific conditions due to the chemical properties of titanium. When the barrier metal is molybdenum, the etching process is performed with a copper layer and a molybdenum layer. It has the disadvantage of poor adhesion. In particular, the over-etching phenomenon due to penetration of the etching composition into a portion where the adhesion between the copper film and the molybdenum film is poor is intensified.
나아가 강한 산화력을 가지는 식각 용액을 이용하여 구리 몰리브덴막을 식각할 경우 식각 속도가 너무 빨라 공정 마진에 문제가 발생하며, 테이퍼 프로파일(taper profile) 중 테이퍼 앵글(taper angle)이 90도 또는 이보다 큰 값을 가지게 되어 후속 공정이 어려워지게 되며, 패턴의 직선성 또한 좋지 못하다. Furthermore, when the copper molybdenum film is etched using an etching solution having a strong oxidizing power, the etching rate is too fast, causing a problem in the process margin, and the taper angle of the taper profile is 90 degrees or higher. As a result, the subsequent process becomes difficult, and the linearity of the pattern is also poor.
일례로 구리/몰리브덴 합금을 동시에 식각할 때 몰리브덴 합금의 식각 속도를 향상시켜 몰리브덴 합금의 잔사를 제거하기위해 구리/몰리브덴 합금 식각액은 불소화합물을 포함한다. 이러한 불소화합물은 몰리브덴 합금뿐만 아니라 구리/몰리브덴 합금인 게이트 배선의 하부막인 유리기판과 소스드레인 배선의 하부막인 SiNx도 식각하게 되는 문제점이 있다. 하부막의 식각 증가는 후 공정 및 리워크(rework) 공정에서의 식각 얼룩에 의한 불량과 슬리밍 공정에서의 식각 얼룩에 의한 불량을 증가시킨다.For example, when etching a copper/molybdenum alloy at the same time, the copper/molybdenum alloy etchant contains a fluorine compound in order to remove the residue of the molybdenum alloy by improving the etching rate of the molybdenum alloy. This fluorine compound has a problem that not only a molybdenum alloy but also a glass substrate, which is a lower layer of a gate wiring made of a copper/molybdenum alloy, and SiNx, which is a lower layer of a source drain wiring, is etched. The increase in etching of the lower layer increases defects due to etching stains in the post process and rework process and defects due to etching stains in the slimming process.
다양한 종래의 식각 조성물이 상기에 기재된 문제점 외에도 식각 특성을 저하시키는 문제점을 여전히 가지고 있어 이러한 문제점을 획기적으로 개선시킬 수 있는 식각 조성물에 대한 연구가 요구된다.In addition to the above-described problems, various conventional etching compositions still have problems of deteriorating etching properties, and thus research on etching compositions capable of remarkably improving these problems is required.
본 발명은 식각 조성물, 특히 구리 등의 금속 단일막 또는 구리 등의 금속을 포함하는 다중금속막을 효과적으로 식각하여 식각 특성을 획기적으로 향상시킬 수 있는 식각 조성물 및 이를 이용하는 식각방법을 제공한다.The present invention provides an etching composition, in particular, an etching composition capable of remarkably improving etching properties by effectively etching a single metal layer such as copper or a multimetal layer including a metal such as copper, and an etching method using the same.
또한 본 발명은 본 발명의 식각 조성물을 이용하여 수행되는 공정을 포함하는 반도체 소자의 제조방법을 제공한다.In addition, the present invention provides a method of manufacturing a semiconductor device including a process performed using the etching composition of the present invention.
본 발명은 놀랍도록 식각성능이 향상된 식각 조성물을 제공하는 것으로, 본 발명의 식각 조성물은 과산화수소; 인산계 화합물 및 황산계 화합물인 식각 첨가제; pH 조절제; 불소 화합물; 아데닌, 구아닌 또는 이들의 혼합물인 언더컷 억제제; 아민 화합물; 및 잔량의 물을 포함하며, 상기 언더컷 억제제와 아민 화합물은 중량비가 1: 5 내지 10인 것을 특징으로 한다.The present invention is to provide an etching composition with surprisingly improved etching performance, the etching composition of the present invention is hydrogen peroxide; Etching additives such as phosphoric acid compounds and sulfuric acid compounds; pH adjuster; Fluorine compounds; Undercut inhibitors that are adenine, guanine, or mixtures thereof; Amine compounds; And the remaining amount of water, wherein the undercut inhibitor and the amine compound have a weight ratio of 1: 5 to 10.
바람직하게 본 발명의 일 실시예에 따른 아민 화합물은 C4 내지 C10의 알킬아민, C3 내지 C10의 시클로알킬아민 또는 이들의 혼합물일 수 있으며, 보다 바람직하게는 직쇄 또는 분지쇄의 헥실 아민일 수 있다.Preferably, the amine compound according to an embodiment of the present invention may be a C4 to C10 alkylamine, a C3 to C10 cycloalkylamine, or a mixture thereof, more preferably a linear or branched hexyl amine.
본 발명의 일 실시예에 따른 식각 조성물은 pH 조절제와 식각 첨가제의 중량비가 1 : 1 내지 4일 수 있다.In the etching composition according to an embodiment of the present invention, the weight ratio of the pH adjusting agent and the etching additive may be 1: 1 to 4.
본 발명의 일 실시예에 따른 인산계 화합물은 인산, 인산염 또는 이들의 혼합물이며, 황산계 화합물은 황산, 황산염 또는 이들의 혼합물일 수 있다.The phosphoric acid-based compound according to an embodiment of the present invention may be phosphoric acid, a phosphate, or a mixture thereof, and the sulfuric acid-based compound may be sulfuric acid, a sulfate, or a mixture thereof.
본 발명의 일 실시예에 따른 식각 조성물은 식각 조성물 총 중량에 대해 과산화수소 10 내지 30중량%, 식각첨가제 0.01 내지 5중량%, pH 조절제0.1 내지 3 중량%, 불소 화합물 0.01 내지 1중량%, 언더컷 억제제 0.01 내지 2중량%, 아민 화합물 0.1 내지 5중량% 및 잔량의 물을 포함할 수 있다.Etching composition according to an embodiment of the present invention is 10 to 30% by weight of hydrogen peroxide, 0.01 to 5% by weight of etch additive, 0.1 to 3% by weight of pH adjuster, 0.01 to 1% by weight of fluorine compound, undercut inhibitor based on the total weight of the etching composition. It may contain 0.01 to 2% by weight, 0.1 to 5% by weight of the amine compound, and the balance of water.
본 발명의 일 실시예에 따른 불소 화합물은 HF, NaF, KF, AlF3, HBF4, NH4F, NH4HF2, NaHF2, KHF2 및 NH4BF4에서 선택되는 어느 하나 또는 둘 이상일 수 있다.The fluorine compound according to an embodiment of the present invention is any one or two or more selected from HF, NaF, KF, AlF 3 , HBF 4 , NH 4 F, NH 4 HF 2 , NaHF 2 , KHF 2 and NH 4 BF 4 I can.
본 발명의 일 실시예에 따른 식각 조성물은 식각억제제 및 킬레이트제 군에서 선택되는 하나 또는 둘 이상을 더 포함할 수 있다.The etching composition according to an embodiment of the present invention may further include one or more selected from the group of an etch inhibitor and a chelating agent.
본 발명의 일 실시예에 따른 식각억제제는 분자내 산소, 황 및 질소에서 선택되는 하나 또는 둘 이상의 헤테로 원자를 포함하는 헤테로고리 화합물이며,The etch inhibitor according to an embodiment of the present invention is a heterocyclic compound containing one or two or more heteroatoms selected from oxygen, sulfur, and nitrogen in the molecule,
킬레이트제는 분자내 아미노기와 카르복실산기 또는 포스폰산기를 포함하는 화합물일 수 있다.The chelating agent may be a compound containing an amino group and a carboxylic acid group or a phosphonic acid group in the molecule.
또한 본 발명은 본 발명의 일 실시예에 따른 식각 조성물을 금속막에 접촉시켜 금속막을 식각하는 단계를 포함하는 금속막의 식각방법을 제공한다.In addition, the present invention provides a method for etching a metal film including the step of etching the metal film by contacting the metal film with the etching composition according to an embodiment of the present invention.
본 발명의 일 실시예에 따른 금속막은 구리, 몰리브덴, 티타늄, 인듐, 아연, 주석 및 나이오븀에서 선택되는 하나 또는 둘 이상이 포함하는 것일 수 있다.The metal film according to an embodiment of the present invention may include one or two or more selected from copper, molybdenum, titanium, indium, zinc, tin, and niobium.
또한 본 발명의 일 실시예에 따른 금속막은 구리를 포함하는 단일 금속막; 구리 합금막을 포함하는 구리합금막; 및 구리를 포함하는 상부막과 몰리브데늄막 또는 몰리브데늄 합금막을 포함하는 다중막에서 선택되는 것일 수 있다.In addition, the metal film according to an embodiment of the present invention includes a single metal film containing copper; A copper alloy film including a copper alloy film; And a multilayer including an upper layer including copper and a molybdenum layer or a molybdenum alloy layer.
또한 본 발명은 본 발명의 일 실시예에 따른 식각 조성물을 이용하여 수행되는 식각 공정을 포함하는 반도체 소자의 제조 방법을 제공한다.In addition, the present invention provides a method of manufacturing a semiconductor device including an etching process performed using the etching composition according to an embodiment of the present invention.
본 발명의 식각 조성물은 안정성이 매우 우수하여 처리매수 및 처리시간이 증가하여도 식각 속도, 식각 균일성 및 언더컷 미발생 등의 식각 특성에 변화가 없어 우수한 식각 성능을 가진다. The etching composition of the present invention has excellent stability and has excellent etching performance because there is no change in etching characteristics such as etching speed, etching uniformity, and no undercut even when the number of sheets and treatment time are increased.
또한 본 발명의 식각 조성물은 식각속도가 우수할 뿐만 아니라 하부막의 금속 등의 잔사가 남지 않고 식각 시 열이 발생되지 않아, 언더컷이 발생되지 않고 낮은 테이퍼 앵글을 가지는 등의 현저하게 향상된 식각 특성을 가진다.In addition, the etching composition of the present invention not only has excellent etching speed, but also has remarkably improved etching properties such as no residual metal of the lower layer and no heat generated during etching, so that undercut does not occur and has a low taper angle. .
따라서 본 발명의 식각 조성물을 이용하는 금속막의 식각방법은 금속 단일막 또는 금속 등을 포함하는 다중금속막을 우수한 식각속도로 효과적으로 식각할 수 있다.Accordingly, the etching method of a metal film using the etching composition of the present invention can effectively etch a single metal film or a multimetal film including metal at an excellent etching rate.
또한 본 발명의 식각 조성물을 이용하여 수행되는 공정을 포함하는 반도체 소자의 제조방법은 본 발명의 식각 조성물을 이용함으로써 향상된 성능을 가지는 반도체 소자의 제조가 가능하다.In addition, in the method for manufacturing a semiconductor device including a process performed using the etching composition of the present invention, it is possible to manufacture a semiconductor device having improved performance by using the etching composition of the present invention.
본 발명의 명세서에 기재된 “알킬”은 오직 탄소 및 수소 원자로만 이루어지고, 1 내지 20개의 탄소 원자 (C1-C20 알킬), 1 내지 15개의 탄소원자 (C1-C15 알킬), 4 내지 10개의 탄소 원자 (C4-C10 알킬), 바람직하게는 4 내지 8개의 탄소원자(C4-C8 알킬)를 가지며, 단일 결합에 의해 분자의 나머지 부분에 부착되는 포화 직쇄형 또는 분지형 탄화수소쇄 라디칼을 지칭한다. 구체적인 일례로의 알킬기는 메틸, 에틸, n-프로필, 1-메틸에틸 (이소-프로필), n-부틸, n-펜틸, 1,1-디메틸에틸 (t-부틸), 3-메틸헥실, 2-메틸헥실 등을 포함한다."Alkyl" as described in the present specification consists of only carbon and hydrogen atoms, 1 to 20 carbon atoms (C1-C20 alkyl), 1 to 15 carbon atoms (C1-C15 alkyl), 4 to 10 carbons It refers to a saturated straight or branched hydrocarbon chain radical having an atom (C4-C10 alkyl), preferably 4 to 8 carbon atoms (C4-C8 alkyl), attached to the rest of the molecule by a single bond. The alkyl group as a specific example is methyl, ethyl, n-propyl, 1-methylethyl (iso-propyl), n-butyl, n-pentyl, 1,1-dimethylethyl (t-butyl), 3-methylhexyl, 2 -Methylhexyl, etc. are included.
본 명세서에 기재된 "시클로알킬"은 오직 탄소 및 수소 원자로만 이루어지고, 3 내지 15개의 탄소 원자, 바람직하게는 3 내지 10개의 탄소 원자, 3 내지 9개의 탄소 원자, 3 내지 8개의 탄소 원자, 3 내지 7개의 탄소 원자, 3 내지 6개의 탄소원자, 3 내지 5개의 탄소 원자를 갖는 융합된 또는 가교된 고리계, 4개의 탄소 원자를 갖는 고리, 또는 3개의탄소 원자를 갖는 고리를 포함할 수 있는 안정한 비-방향족 모노시클릭 또는 폴리시클릭 탄화수소 라디칼을 지칭한다. 시클로알킬 고리는 포화 또는 불포화일 수 있고, 단일 결합에 의해 분자의 나머지 부분에 부착될 수 있다. 모노시클릭 라디칼은 예를 들어 시클로프로필, 시클로부틸, 시클로펜틸, 시클로헥실, 시클로헵틸, 및 시클로옥틸을 포함한다. 폴리시클릭 라디칼은 예를 들어 아다만틸, 노르보르닐, 데칼리닐, 7,7-디메틸-비시클로[2.2.1]헵타닐 등을 포함한다."Cycloalkyl" as described herein consists only of carbon and hydrogen atoms, 3 to 15 carbon atoms, preferably 3 to 10 carbon atoms, 3 to 9 carbon atoms, 3 to 8 carbon atoms, 3 A fused or bridged ring system having from to 7 carbon atoms, 3 to 6 carbon atoms, 3 to 5 carbon atoms, a ring having 4 carbon atoms, or a ring having 3 carbon atoms. It refers to a stable non-aromatic monocyclic or polycyclic hydrocarbon radical. Cycloalkyl rings can be saturated or unsaturated and can be attached to the rest of the molecule by a single bond. Monocyclic radicals include, for example, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, and cyclooctyl. Polycyclic radicals include, for example, adamantyl, norbornyl, decalinyl, 7,7-dimethyl-bicyclo[2.2.1]heptanyl, and the like.
본 발명은 식각 조성물을 제공하는 것으로, 특히 구리 등을 포함하는 단일 또는 다중금속막의 식각 특성을 획기적으로 향상시키는 동시에 식각시 발열이 발생하지 않는 식각 조성물을 제공한다.The present invention provides an etching composition, and in particular, provides an etching composition that does not generate heat during etching while remarkably improving the etching characteristics of a single or multi-metal layer including copper.
본 발명의 식각 조성물은 과산화수소; 인산계 화합물 및 황산계 화합물인 식각 첨가제; pH 조절제; 불소 화합물; 아데닌, 구아닌 또는 이들의 혼합물인 언더컷 억제제; 아민 화합물; 및 잔량의 물을 포함하며, 상기 언더컷 억제제와 아민 화합물은 중량비가 1: 5 내지 10일 수 있다.The etching composition of the present invention comprises hydrogen peroxide; Etching additives such as phosphoric acid compounds and sulfuric acid compounds; pH adjuster; Fluorine compounds; Undercut inhibitors that are adenine, guanine, or mixtures thereof; Amine compounds; And the remaining amount of water, and the weight ratio of the undercut inhibitor and the amine compound may be 1: 5 to 10.
본 발명의 식각 조성물은 상기와 같은 조성의 조합, 특히 과산화수소, pH 조절제, 불소화합물, 특정화합물의 혼합물인 식각 첨가제, 특정 화합물의 언더컷 억제제 및 아민 화합물의 조합인 동시에 제어된 언더컷 억제제와 아민 화합물의 중량비를 가짐으로써 놀랍도록 향상된 식각 특성을 가진다.The etching composition of the present invention is a combination of the above composition, in particular, hydrogen peroxide, a pH adjuster, a fluorine compound, an etching additive that is a mixture of a specific compound, an undercut inhibitor of a specific compound, and a combination of an amine compound and a controlled undercut inhibitor and an amine compound. By having a weight ratio, it has surprisingly improved etching properties.
구체적으로, 상기와 같은 조성의 조합 및 특정성분의 제어된 중량비를 가지는 본 발명의 식각 조성물은 안정성이 매우 우수하여 식각되는 단일 또는 다중금속막의 계면을 보호하고 열이 발생하지 않음으로써 식각특성을 극히 향상시킨다.Specifically, the etching composition of the present invention having the combination of the above composition and the controlled weight ratio of specific components has excellent stability, protects the interface of the single or multi-metal layer to be etched, and does not generate heat, so that the etching property is extremely Improve.
바람직하게 본 발명은 식각 조성물은 식각 첨가제로 특정 화합물인 인산계 화합물과 황산계 화합물을 혼합하여 사용함으로써 보다 향상된 식각 특성을 가진다. 본 발명의 인산계 화합물은 인산, 인산염 또는 이들의 혼합물일 수 있으며, 황산계 화합물은 황산, 황산염 또는 이들의 혼합물일 수 있다. 구체적으로 본 발명의 식각 조성물은 황산과 인산염의 혼합물을 식각 첨가제로 사용함으로써 식각 첨가제외의 다른 조성과의 조합으로 식각 특성에 있어서 시너지 효과를 가진다.Preferably, the etching composition of the present invention has improved etching properties by mixing and using a phosphoric acid-based compound and a sulfuric acid-based compound as an etching additive. The phosphoric acid-based compound of the present invention may be phosphoric acid, a phosphate, or a mixture thereof, and the sulfuric acid-based compound may be sulfuric acid, a sulfate, or a mixture thereof. Specifically, the etching composition of the present invention uses a mixture of sulfuric acid and phosphate as an etching additive, and thus has a synergistic effect on etching characteristics in combination with other compositions other than the etching additive.
본 발명의 일 실시예에 따른 아민 화합물은 C4 내지 C10의 알킬아민, C3 내지 C10의 시클로알킬아민 또는 이들의 혼합물일 수 있으며, 바람직하게는 C4 내지 C8의 알킬아민, C3 내지 C8의 시클로알킬아민 또는 이들의 혼합물일 수 있다.The amine compound according to an embodiment of the present invention may be a C4 to C10 alkylamine, a C3 to C10 cycloalkylamine or a mixture thereof, preferably a C4 to C8 alkylamine, a C3 to C8 cycloalkylamine Or it may be a mixture thereof.
바람직하게 본 발명의 일 실시예에 따른 아민 화합물은 직쇄 또는 분지쇄의 C5-C7알킬 아민일 수 있으며, 보다 바람직하게는 직쇄 또는 분지쇄의 헥실 아민일 수 있다.Preferably, the amine compound according to an embodiment of the present invention may be a straight-chain or branched C5-C7 alkyl amine, and more preferably, a straight-chain or branched-chain hexyl amine.
본 발명의 일 실시예에 따른 상기 언더컷 억제제와 아민 화합물은 중량비가 1: 5 내지 10일 수 있다.The weight ratio of the undercut inhibitor and the amine compound according to an embodiment of the present invention may be 1: 5 to 10.
본 발명의 일 실시예에 따른 식각 조성물 총 중량에 대해 과산화수소 10 내지 30중량%, 식각 첨가제 0.01 내지 5중량%, pH 조절제0.1 내지 3 중량%, 불소 화합물 0.01 내지 1중량%, 언더컷 억제제 0.01 내지 2중량%, 아민 화합물 0.1 내지 5중량% 및 잔량의 물을 포함일 수 있으며, 바람직하게는 과산화수소 15 내지 25중량%, 식각 첨가제 0.1 내지 3중량%, pH 조절제0.1 내지 3 중량%, 불소 화합물 0.05 내지 0.5중량, 언더컷 억제제 0.05 내지 1중량%, 아민 화합물 0.1 내지 1중량%및 잔량의 물일 수 있다.10 to 30% by weight of hydrogen peroxide, 0.01 to 5% by weight of etching additives, 0.1 to 3% by weight of pH adjuster, 0.01 to 1% by weight of fluorine compounds, 0.01 to 2 of undercut inhibitors based on the total weight of the etching composition according to an embodiment of the present invention % By weight, 0.1 to 5% by weight of the amine compound, and the remaining amount of water, preferably 15 to 25% by weight of hydrogen peroxide, 0.1 to 3% by weight of etching additives, 0.1 to 3% by weight of pH adjuster, 0.05 to of fluorine compound It may be 0.5% by weight, 0.05 to 1% by weight of an undercut inhibitor, 0.1 to 1% by weight of an amine compound, and the balance of water.
이하에서는 본 발명의 일 실시예에 따른 식각 조성물의 각 구성성분들에 대해 보다 상세히 설명한다.Hereinafter, each component of the etching composition according to an exemplary embodiment will be described in more detail.
a) 과산화수소a) hydrogen peroxide
본 발명의 식각 조성물에서 과산화수소는 금속 또는 금속막의 전이금속 또는 금속의 주 산화제로 작용한다.In the etching composition of the present invention, hydrogen peroxide acts as a transition metal of a metal or a metal film or a main oxidizing agent of the metal.
본 발명의 일 실시예에 따른 과산화수소는 식각 조성물 총 중량에 대하여 10 내지 30중량%로 포함될 수 있다. 과산화수소가 10중량% 미만으로 포함될 경우 전이금속의 산화력이 충분하지 않아 식각이 이루어지지 않을 수 있으며,30중량% 초과하여 포함되는 경우 식각 속도가 너무 빨라 공정 제어가 어려워지는 문제가 있다. 바람직한 식각속도를 구현할 수 있어 식각 잔사 및 식각 불량을 방지할 수 있으며, 시디로스(CD loss)가 감소하고 공정 조절이 용이하다는 측면에서 바람직하게 15 내지 25중량%로 포함될 수 있다. Hydrogen peroxide according to an embodiment of the present invention may be included in an amount of 10 to 30% by weight based on the total weight of the etching composition. When hydrogen peroxide is included in an amount of less than 10% by weight, etching may not be performed due to insufficient oxidizing power of the transition metal, and when it is included in an amount exceeding 30% by weight, there is a problem that the etching rate is too fast and process control becomes difficult. Since it is possible to implement a desirable etching rate, etching residues and poor etching can be prevented, and in terms of reducing CD loss and easy process control, it may preferably be included in an amount of 15 to 25% by weight.
b) 식각 첨가제b) etching additive
본 발명의 식각 첨가제는 전이금속 또는 금속에 대한 보조 산화제의 역할을 하며, 테이퍼 프로파일을 개선시키는 것으로 본 발명의 식각 첨가제는 특정한 무기산의 혼합물이 사용된다.The etching additive of the present invention serves as a transition metal or an auxiliary oxidizing agent for the metal, and improves the taper profile. As the etching additive of the present invention, a mixture of a specific inorganic acid is used.
본 발명의 무기산은 인산계 화합물 및 황산계 화합물일 수 있으며, 인산계 화합물은 인산이 포함된 화합물이면 모두 가능하며, 인산, 인산염 또는 이들의 혼합물일 수 있으며, 황산계 화합물 또한 황산이 포함된 무기산이면 모두 가능하며, 일례로 황산, 황산염 또는 이들의 혼합물일 수 있으며, 상기 황산염은 황산암모늄, 과황산암모늄, 황산나트륨, 과황산나트륨, 황산칼륨 또는 과황산칼륨일 수 있으나, 이에 한정되지 않는다.The inorganic acid of the present invention may be a phosphoric acid-based compound and a sulfuric acid-based compound, and the phosphoric acid-based compound may be any compound containing phosphoric acid, and may be phosphoric acid, phosphate or a mixture thereof, and the sulfuric acid-based compound is also an inorganic sulfuric acid-containing compound. Any acid may be used, and examples thereof may be sulfuric acid, sulfate, or a mixture thereof, and the sulfate may be ammonium sulfate, ammonium persulfate, sodium sulfate, sodium persulfate, potassium sulfate, or potassium persulfate, but is not limited thereto.
바람직하게 본 발명의 일 실시예에 따른 인산계 화합물은 인산, 인산수소칼륨, 인산수소나트륨, 인산수소암모늄, 인산나트륨, 과인산나트륨, 인산칼륨, 과인산칼륨, 인산암모늄 및 과인산암모늄에서 선택되는 하나 또는 둘 이상일 수 있으며, 황산계 화합물은 황산, 황산수소암모늄 황산암모늄, 과황산암모늄, 황산나트륨, 과황산나트륨, 황산칼륨 및 과황산칼륨에서 선택되는 하나 또는 둘 이상일 수 있다. Preferably, the phosphoric acid-based compound according to an embodiment of the present invention is one selected from phosphoric acid, potassium hydrogen phosphate, sodium hydrogen phosphate, ammonium hydrogen phosphate, sodium phosphate, sodium superphosphate, potassium phosphate, potassium superphosphate, ammonium phosphate and ammonium superphosphate, or It may be two or more, and the sulfuric acid-based compound may be one or two or more selected from sulfuric acid, ammonium hydrogen sulfate ammonium sulfate, ammonium persulfate, sodium sulfate, sodium persulfate, potassium sulfate and potassium persulfate.
바람직하게는 본 발명의 일 실시예에 따른 식각 첨가제는 황산 및 인산염의 조합일 수 있다.Preferably, the etching additive according to an embodiment of the present invention may be a combination of sulfuric acid and phosphate.
본 발명의 일 실시예에 따른 식각 첨가제는 식각 조성물 총중량에 대하여 0.01 내지 5중량%,식각 첨가제 사용에 따른 테이퍼 프로파일 개선 효과 및 식각 특성의 저하를 억제하기 위한 측면에서 바람직하게는 0.1 내지 3중량%, 보다 바람직하게는 1 내지 3중량%로 포함될 수 있다. The etching additive according to an embodiment of the present invention is 0.01 to 5% by weight based on the total weight of the etching composition, and preferably 0.1 to 3% by weight in terms of improving the taper profile and suppressing deterioration of the etching characteristics by using the etching additive. , More preferably, it may be included in 1 to 3% by weight.
c) pH조절제c) pH regulator
본 발명의 일 실시예에 따른 pH조절제는 상기 pH 조절제는 본 발명의 일 실시예에 따른 pH 조절제는 수산화나트륨, 수산화칼륨, 탄산나트륨 및 수산화암모늄에서 선택되는 하나 또는 둘 이상일 수 있으며, 바람직하게는 수산화나트륨일 수 있다. 상기 식각액 조성물의 pH를 3 내지 5로 조절할 수 있다. 상기 식각액 조성물의 pH가 상기와 같은 범위를 가질 때 산화물 반도체가 식각되지 않고 구리와 몰리브덴 합금의 식각이 원활하게 진행될 수 있다. 상기 pH 조절제는 조성물의 총 중량에 대하여 0.1 내지 3 중량%가 포함되는 것이 바람직하다.The pH adjusting agent according to an embodiment of the present invention may be one or two or more selected from sodium hydroxide, potassium hydroxide, sodium carbonate and ammonium hydroxide, and the pH adjusting agent according to an embodiment of the present invention may be It can be sodium. The pH of the etchant composition may be adjusted to 3 to 5. When the pH of the etchant composition has the above range, the oxide semiconductor may not be etched and the copper and molybdenum alloy may be easily etched. It is preferable that the pH adjuster contains 0.1 to 3% by weight based on the total weight of the composition.
pH 조절제와 식각 첨가제의 중량비는 1 내지 1 : 4 일 수 있다.The weight ratio of the pH adjuster and the etching additive may be 1 to 1:4.
식각 첨가제의 중량비가 상기의 범위를 만족하기 못하는 경우 식각 속도가 현저히 감소하며 처리매수 증가 시 발열 및 언더컷을 발생시킬 수 있으며, 몰리브데늄 식각을 억제하여 잔막 발생을 일으킬 수 있다.When the weight ratio of the etch additive does not satisfy the above range, the etch rate significantly decreases, heat generation and undercut may occur when the number of processed sheets is increased, and residual film may be generated by inhibiting molybdenum etching.
d) 불소화합물d) fluorine compounds
본 발명의 식각 조성물에 포함되는 불소화합물은 이중금속막 일례로 구리/몰리브덴 막을 동시에 식각할 때 몰리브덴 막의 식각 속도를 향상시켜 테일랭스를 감소시켜 주고,식각시 필연적으로 발생하게 되는 몰리브덴의 잔사를 제거하는 작용을 한다. 몰리브덴의 테일 증가는 휘도를 감소시킬 수 있으며, 잔사가 기판 및 하부막에 남게 되면 전기적인 쇼트,배선 불량 및 휘도를 감소시키므로 반드시 제거해야 한다.The fluorine compound contained in the etching composition of the present invention is an example of a double metal film, which improves the etch rate of the molybdenum film when simultaneously etching the copper/molybdenum film to reduce tail length, and removes molybdenum residues that inevitably occur during etching. It works. Increasing the tail of molybdenum can reduce the luminance, and if the residue remains on the substrate and the lower film, it must be removed because it reduces electrical short, poor wiring and luminance.
본 발명의 일 실시예에 따른 불소화합물은 해리되어 F- 또는 HF2 -를 발생시킬 수 있는 화합물이면 모두 가능하나, 구체적인 예로는 HF,NaF, KF, A lF3, HBF4, NH4F, NH4HF2, NaHF2, KHF2 및 NH4BF4에서 선택되는 하나 또는 둘 이상일 수 있으며, 바람직하게 HF, A1F3, HBF4, NH4F, 및 NH4HF2에서 선택되는 하나 또는 둘 이상일 수 있다. 불소화합물은 식각 조성물 총 중량에 대하여 0.01 내지 1중량%,금속 잔사 일례로 구리/몰리브덴 막에서 몰리브덴의 잔사를 효과적인 제거 및 유리기판 등의 하부막의 식각을 억제하기위한 측면에서 바람직하게는 0.05 내지 0.5중량%로 포함될 수 있다. The fluorine compound according to an embodiment of the present invention may be any compound capable of dissociating and generating F - or HF 2 - , but specific examples include HF, NaF, KF, A lF 3 , HBF 4 , NH 4 F, NH 4 HF 2 , NaHF 2 , KHF 2 and NH 4 BF 4 may be one or two or more selected from, preferably HF, A1F 3 , HBF 4 , NH 4 F, and one or two selected from NH 4 HF 2 It can be more than that. The fluorine compound is 0.01 to 1% by weight based on the total weight of the etching composition, preferably 0.05 to 0.5 in terms of effective removal of molybdenum residues from the copper/molybdenum film as an example of a metal residue and suppression of etching of a lower film such as a glass substrate. It may be included in weight percent.
e) 언더컷 억제제e) undercut inhibitor
본 발명의 일 실시예에 따른 식각 조성물에 포함되는 언더컷 억제제는 특정한 화합물인 아데닌(adenine),구아닌(guanine) 또는 이들의 혼합물을 사용하며, 본 발명의 특정한 식각 첨가제 및 아민 화합물과의 가장 바람직한 조합으로 의도적으로 채택된 화합물이다.The undercut inhibitor included in the etching composition according to an embodiment of the present invention uses a specific compound such as adenine, guanine, or a mixture thereof, and is the most preferable combination of a specific etching additive and an amine compound of the present invention. It is an intentionally adopted compound.
본 발명의 이러한 조합에 의해 본 발명의 식각 조성물은 식각속도가 저하되지 않으며, 식각시 열이 발생하지 않고, 금속의 잔사가 발생되지 않아 식각 특성을 놀랍도록 향상시킨다. By this combination of the present invention, the etching rate of the etching composition of the present invention is not lowered, heat is not generated during etching, and metal residues are not generated, thereby remarkably improving etching characteristics.
특히 금속이중막을 동시에 식각할 시, 일례로 구리/몰리브덴 막의 동시 식각시 식각속도를 저하시키지 않으면서도 몰리브덴 막의 몰리브덴의 잔사를 방지하고 언더컷 발생을 억제할 수 있다.In particular, when the metal double layer is etched at the same time, for example, when the copper/molybdenum layer is simultaneously etched, the molybdenum residue of the molybdenum layer can be prevented and the occurrence of undercut can be suppressed without lowering the etching rate.
본 발명의 언더컷 억제제의 함량은 몰리브덴의 잔사가 발생할 우려, 구리의 식각속도 감소 및 언더컷 억제 등을 고려하여 좋기로는 조성물 총 중량에 대하여 0.01 내지 2중량% 바람직하게 0.05 내지 1중량%로 포함될 수 있다.The content of the undercut inhibitor of the present invention may be preferably contained in an amount of 0.01 to 2% by weight, preferably 0.05 to 1% by weight, based on the total weight of the composition in consideration of the possibility of occurrence of molybdenum residues, reduction in the etching rate of copper, and suppression of undercuts. have.
f) 아민 화합물f) amine compounds
본 발명의 식각 조성물에 포함되는 아민 화합물은 식각 공정 시 식각 조성물 내에 금속이온 농도가 증가하게 되며 이러한 금속 이온은 산화제인 과산화수소를 분해시키는 촉매역할을 하게 됨으로써 식각공정 전체의 경시변화를 초래하게 되나, 아민 화합물을 함유시킴으로써 이러한 과산화수소의 분해를 억제해 전체적인 식각 공정의 경시변화를 억제하여 식각특성을 향상시킨다.The amine compound contained in the etching composition of the present invention increases the concentration of metal ions in the etching composition during the etching process, and these metal ions act as a catalyst to decompose hydrogen peroxide, which is an oxidizing agent, resulting in a change with time in the entire etching process. By containing an amine compound, the decomposition of hydrogen peroxide is suppressed to suppress changes over time in the entire etching process, thereby improving etching characteristics.
바람직하게 본 발명의 아민 화합물은 C4 내지 C10의 알킬아민, C3 내지 C10의 시클로알킬아민 또는 이들의 혼합물일 수 있으나, 바람직하게 C4 내지 C8의 알킬아민, C3 내지 C8의 시클로알킬아민 또는 이들의 혼합물일 수 있으며, 좋기로는 직쇄 또는 분지쇄의 5 내지 7개의 탄소수를 가지는 헥실 아민일 수 있으며, 보다 좋기로는 직쇄 또는 분지쇄의 헥실 아민일 수 있으며, 헥실아민은 하기 화합물에서 선택되나, 이에 한정이 있는 것은 아니다.Preferably, the amine compound of the present invention may be a C4 to C10 alkylamine, a C3 to C10 cycloalkylamine, or a mixture thereof, but preferably a C4 to C8 alkylamine, a C3 to C8 cycloalkylamine, or a mixture thereof It may be, preferably a straight-chain or branched hexyl amine having 5 to 7 carbon atoms, more preferably a straight-chain or branched hexyl amine, and the hexylamine is selected from the following compounds, There is no limitation.
본 발명의 일 실시예에 따른 아민 화합물은 우수한 효과를 가지기위한 측면에서 바람직하게 n-헥실아민, i-헥실아민 및 neo-헥실아민에서 선택되는 하나 또는 둘 이상일 수 있다.The amine compound according to an embodiment of the present invention may be one or more preferably selected from n-hexylamine, i-hexylamine, and neo-hexylamine in terms of having an excellent effect.
본 발명의 일 실시예에 따른 아민 화합물은 0.1 내지 5중량%, 바람직하게 0.1 내지 1중량%일 수 있다.The amine compound according to an embodiment of the present invention may be 0.1 to 5% by weight, preferably 0.1 to 1% by weight.
본 발명의 일 실시예에 따른 아민 화합물과 언더컷 억제제는 구체적으로 특정아민 화합물인 헥실 아민: 특정한 언더컷 억제제인 아데닌, 구아닌 또는 이들의 혼합물의 중량비가 5 내지 10 : 1 일 수 있다. The amine compound and the undercut inhibitor according to an embodiment of the present invention may have a weight ratio of 5 to 10: 1 in a specific amine compound, hexyl amine: a specific undercut inhibitor, adenine, guanine, or a mixture thereof.
상기 아민 화합물과 언더컷 억제제의 중량비보다 아민 화합물의 비율이 낮은 경우, 과산화 수소 분해 억제효과가 감소되고 처리 매수 증가 시 언더컷 및 발열이 발생할 수 있다. 또한 상기 아민 화합물과 언더컷 억제제의 중량비보다 아민 화합물의 비율이 높은 경우 몰리브데늄 식각을 억제하여 잔막 발생을 일으킬 수 있다.When the ratio of the amine compound is lower than the weight ratio of the amine compound and the undercut inhibitor, the effect of inhibiting hydrogen peroxide decomposition is reduced, and undercut and heat generation may occur when the number of processed sheets is increased. In addition, when the ratio of the amine compound is higher than the weight ratio of the amine compound and the undercut inhibitor, molybdenum etching may be suppressed to cause a residual film.
g) 식각억제제g) Etch inhibitor
본 발명의 일 실시예에 따른 식각 조성물은 식각억제제를 더 포함할 수 있으며, 식각억제제는 전이금속의 식각 속도를 조절하여 패턴의 시디로스(CD loss)를 줄여주고,공정마진을 높이며,적절한 테이퍼앵글을 갖는 식각 프로파일이 되도록 하는 것으로, 분자내 산소,황 및 질소 중에서 선택되는 하나 또는 둘 이상의 헤테로 원자를 포함하는 헤테로고리 화합물일 수 있으며, 본 발명의 헤테로고리 화합물은 단환식의 헤테로고리 화합물 및 단환식의 헤테로고리와 벤젠고리의 축합구조를 갖는 다환식 헤테로고리 화합물도 포함한다.The etching composition according to an embodiment of the present invention may further include an etch inhibitor, and the etch inhibitor reduces the CD loss of the pattern by controlling the etching rate of the transition metal, increases the process margin, and increases the appropriate taper. To make an etching profile having an angle, it may be a heterocyclic compound containing one or two or more hetero atoms selected from oxygen, sulfur and nitrogen in the molecule, and the heterocyclic compound of the present invention is a monocyclic heterocyclic compound and A polycyclic heterocyclic compound having a condensed structure of a monocyclic heterocycle and a benzene ring is also included.
본 발명의 일 실시예에 따른 헤테로고리 화합물은 구체적인 예로는 옥사졸(oxazole),이미다졸(imidazole), 피라졸(pyrazole), 트리아졸(triazole), 테트라졸(tetrazole), 5-아미노테트라졸(5-aminotetrazole), 메틸테트라졸(methyltetrazole), 피페라진(piperazine), 메틸피페라진(methylpiperazine), 히드록실에틸피페라진 (hydroxyethylpiperazine), 벤즈이미다졸(benzimidazole), 벤즈피 라졸(benzpyrazole), 톨루트리아졸(tolutriazole), 히드로톨루트리아졸(hydrotolutriazole) 또는 히드록시톨루트리아졸(hydroxytolutriazole)일 수 있으며, 바람직하게는 테트라졸, 5-아미노테트라졸 및 메틸테트라졸에서 선택되는 하나 또는 둘 이상일 수 있다. Heterocyclic compounds according to an embodiment of the present invention are specific examples of oxazole, imidazole, pyrazole, triazole, tetrazole , 5-aminotetrazole (5-aminotetrazole), methyltetrazole , piperazine , methylpiperazine, hydroxylethylpiperazine, benzimidazole, benzimidazole , benzpyrazole , tall It may be rutriazole, hydrotolutriazole, or hydroxytolutriazole, preferably one or two selected from tetrazole, 5-aminotetrazole, and methyltetrazole It can be more than that.
본 발명의 식각억제제는 식각 조성물 총 중량에 대하여 0.01 내지 5중량%,The etch inhibitor of the present invention is 0.01 to 5% by weight based on the total weight of the etching composition,
바람직하게는 0.05 내지 2중량%로 포함될 수 있다. 식각억제제가 0.01 중량% 미만으로 포함될 경우 식각 속도 조절이 어렵고,테이퍼 앵글을 조절할 수 있는 능력이 저하되며, 또 공정 마진이 적어 양산성이 저하되는 문제가 있고,5중량% 초과하여 포함되는 경우 식각 속도가 감소하여 비효율적인 문제가 있다. Preferably it may be included in 0.05 to 2% by weight. If the etch inhibitor is contained in an amount of less than 0.01% by weight, it is difficult to control the etch rate, the ability to adjust the taper angle decreases, and there is a problem that mass productivity is lowered due to a small process margin, and if it contains more than 5% by weight, etching There is an inefficient problem due to a decrease in speed.
h) 킬레이트제h) chelating agents
본 발명의 일 실시예에 따른 식각 조성물은 킬레이트제를 더 포함할 수 있으며, 킬레이트제는 식각이 진행되는 동안 발생하는 금속 이온들과 킬레이트를 형성하여 비활성화시킴으로써 이들 금속 이온에 의한 부반응 발생을 방지하고,그 결과 반복되는 식각 공정에도 식각 특성을 유지할 수 있도록 한다. 특히 구리층의 경우 식각 조성물중에 구리 이온이 다량으로 잔존할 경우 패시베이션막을 형성하여 산화되어, 식각이 되지 않는 문제점이 있으나, 킬레이트제의 투입시 구리 이온의 패시베이션막 형성을 방지할 수 있다. 또,킬레이트제는 과산화수소 자체의 분해반응을 방지하여 식각 조성물의 안정성을 증가시킬 수 있다. 따라서, 만약 식각 조성물 중에 킬레이트제가 첨가되지 않을 경우 식각이 진행되는 동안 산화된 금속 이온이 활성화되어 식각 조성물의 식각 특성이 변화되기 쉽고, 또 과산화수소의 분해 반응이 촉진되어 발열 및 폭발이 발생할 수 있다.The etching composition according to an embodiment of the present invention may further include a chelating agent, and the chelating agent forms a chelate with metal ions generated during etching to inactivate, thereby preventing the occurrence of side reactions by these metal ions. ,As a result, the etching characteristics can be maintained even in repeated etching processes. In particular, in the case of the copper layer, when a large amount of copper ions remain in the etching composition, a passivation layer is formed and oxidized, and there is a problem that etching is not performed.However, when a chelating agent is added, the formation of a passivation layer of copper ions can be prevented. In addition, the chelating agent may increase the stability of the etching composition by preventing the decomposition reaction of hydrogen peroxide itself. Therefore, if a chelating agent is not added to the etching composition, oxidized metal ions are activated during the etching process, so that the etching characteristics of the etching composition are liable to change, and the decomposition reaction of hydrogen peroxide is promoted, resulting in heat generation and explosion.
즉, 본 발명의 실시예에 따른 킬레이트제는 식각공정 시 발생되는 금속이온들과 킬레이션하여 과산화수소의 분해를 억제하며, 식각 조성물의 보관시에도 안정성을 높이는 역할하는 것으로, 특별히 한정이 있는 것은 아니나, 분자내 아미노기와 카르복실산기 또는 포스폰산기를 포함하는 것일 수 있으며, 구체적으로 이미노디아세트산(iminodiacetic acid), 니트릴로트리 아세트산(nitri lotriacetic acid), 에틸렌디 아민테트라아세트산(ethylenediaminetetraacetic acid), 디에틸렌트리 니트릴펜타아세트산(diethylenetrinitri1 acetic acid), 아미노트리스(메 틸렌포스폰산)(aminotris(methylenephosphonic acid)), (1-히드록시에탄-1,1-디일) 비스 (포스폰산)((1-hydroxyethane-l, 1-diyl)bis(phosphonic acid)), 에틸렌디아민 테트라(메틸렌포스폰산) (ethylenediamine tetra(methylene phosphonic acid)), 디에틸렌트리아민 펜타(메틸렌포스폰산) (Diethylenetri amine penta(methylenephosphonic acid), 알라닌(alanine), 글루탐산(glutamic acid), 아미노부티르산(aminobutyric acid) 및 글리신(glycin)에서 선택되는 하나 또는 둘 이상일 수 있으며, 바람직하게는 이미노디아세트산, 니트릴로트리 아세트산, 에틸렌디아민테트라아세트산 및 디에틸렌트리니트릴펜타아세트산 에서 선택되는 하나 또는 둘 이상일 수 있다.That is, the chelating agent according to the embodiment of the present invention chelates with metal ions generated during the etching process to inhibit the decomposition of hydrogen peroxide, and serves to increase stability even when the etching composition is stored, but is not particularly limited. , It may contain an amino group in the molecule, a carboxylic acid group or a phosphonic acid group, specifically iminodiacetic acid, nitri lotriacetic acid, ethylenediaminetetraacetic acid, diethylene Trinitrinitri1 acetic acid, aminotris (methylenephosphonic acid), (1-hydroxyethane-1,1-diyl) bis (phosphonic acid) ((1-hydroxyethane- l, 1-diyl)bis(phosphonic acid)), ethylenediamine tetra(methylene phosphonic acid)), diethylenetriamine penta(methylenephosphonic acid) (Diethylenetri amine penta(methylenephosphonic acid), It may be one or two or more selected from alanine, glutamic acid, aminobutyric acid and glycin, preferably iminodiacetic acid, nitrilotriacetic acid, ethylenediaminetetraacetic acid and diethylene. It may be one or two or more selected from trinitrile pentaacetic acid.
본 발명의 일 실시예에 따른 킬레이트제는 식각 조성물 총중량에 대하여 0.1 내지 5중량%,바람직하게는 0.1 내지 3중량%로 포함될 수 있다. 킬레이트제가 0.1 중량% 미만으로 포함될 경우 비활성화시킬 수 있는 금속 이온량이 너무 작아서 과산화수소 분해반응을 제어하는 능력이 떨어지고,5중량% 초과하여 포함되는 경우 추가적인 킬레이트 형성으로 금속을 비활성화 시키는 작용을 기대할 수 없어 비효율적인 문제가 될 수 있다.The chelating agent according to an embodiment of the present invention may be included in an amount of 0.1 to 5% by weight, preferably 0.1 to 3% by weight, based on the total weight of the etching composition. If the chelating agent is included in less than 0.1% by weight, the amount of metal ions that can be deactivated is too small to control the hydrogen peroxide decomposition reaction, and if it is included in more than 5% by weight, it is not possible to expect the effect of deactivating the metal through the formation of additional chelates. Can be a problem.
i) 물i) water
본 발명의 일 실시예에 따른 식각 조성물에서 물은 특별히 한정되는 것은 아니나,탈이온수가 바람직할 수 있으며,물 속에 이온이 제거된 정도인 비저항값이 18MQ/cm이상인 탈이온수가 보다 바람직할 수 있다.In the etching composition according to an embodiment of the present invention, water is not particularly limited, but deionized water may be preferred, and deionized water having a specific resistance value of 18MQ/cm or more, which is a degree in which ions are removed from the water, may be more preferred. .
상기 물은 식각 조성물 총 중량이 100 중량%가 되도록 하는 양으로 포함될The water is included in an amount such that the total weight of the etching composition is 100% by weight.
수 있다.I can.
j) 기타 첨가제j) other additives
본 발명의 금속막의 식각 조성물은 식각 성능을 향상 시키기위해 통상 식각 조성물에 사용되는 임의의 첨가제를 더 포함할 수 있다. 상기 첨가제로는 추가의 식각안정제,글라스 식각억제제, 글리콜계 고분자 등을 들 수 있다. 이들 중 1종 단독으로 또는 2종 이상이 혼합되어 사용될 수 있다.The etching composition of the metal film of the present invention may further include optional additives commonly used in the etching composition to improve etching performance. Examples of the additives include additional etch stabilizers, glass etch inhibitors, and glycol-based polymers. One of these may be used alone or in combination of two or more.
본 발명의 일 실시예에 따른 식각안정제는 알코올기와 아민기를 동시에 갖는 화합물일 수 있다. 구체적인 일 예로, 메탄올아민, 에탄올아민, 프로판올아민, 부탄올아민, 디에탄올아민, 트리에탄올아민, 디메틸에탄올아민 및 N-메틸에탄올아민에서 선택되는 어느 하나 또는 둘 이상의 혼합물일 수 있으며, 이에 제한되지 않는다.The etch stabilizer according to an embodiment of the present invention may be a compound having an alcohol group and an amine group at the same time. As a specific example, it may be any one or a mixture of two or more selected from methanolamine, ethanolamine, propanolamine, butanolamine, diethanolamine, triethanolamine, dimethylethanolamine and N-methylethanolamine, but is not limited thereto.
상기 식각안정제는 식각 조성물 총량을 기준으로, 0.01 내지 10 중량%, 보다 좋게는 0.05 내지 7 중량%, 더욱 좋게는 0.1 내지 5 중량%로 첨가되는 것이 바람직할 수 있다. 상기의 범위 내에서 식각안정제는 금속 잔사의 발생을 효과적으로 억제할 수 있다.The etch stabilizer may be preferably added in an amount of 0.01 to 10% by weight, more preferably 0.05 to 7% by weight, and even more preferably 0.1 to 5% by weight, based on the total amount of the etching composition. Within the above range, the etch stabilizer can effectively suppress the occurrence of metal residues.
본 발명의 일 실시예에 따른 글라스 식각 억제제는 붕불산 또는 붕불산염에서 선택되는 어느 하나 이상의 혼합물일 수 있다. 구체적인 일 예로, HBF4, NaBF4, KBF4 및 NH4BF4 등에서 선택되는 어느 하나 또는 둘 이상의 혼합물일 수 있으나, 이에 제한되지 않는다.The glass etch inhibitor according to an embodiment of the present invention may be any one or more mixtures selected from boric acid or boric acid salt. As a specific example, it may be any one or a mixture of two or more selected from HBF 4 , NaBF 4 , KBF 4 and NH 4 BF 4 , but is not limited thereto.
상기 글라스 식각 억제제의 함량은 식각 조성물 총량을 기준으로, 0.01 내지 10 중량%, 보다 좋게는 0.05 내지 7 중량%, 더욱 좋게는 0.1 내지 5 중량%로 첨가되는 것이 바람직할 수 있다. 상기의 범위 내에서 글라스 식각 억제 효과가 우수하고, 식각 속도가 감소하지 않아 바람직할 수 있다.The content of the glass etch inhibitor may be preferably added in an amount of 0.01 to 10% by weight, more preferably 0.05 to 7% by weight, and even more preferably 0.1 to 5% by weight, based on the total amount of the etching composition. Within the above range, the glass etching inhibiting effect is excellent, and the etching rate does not decrease, which may be preferable.
본 발명의 일 실시예에 따른 식각 조성물은 글리콜계 고분자는 더 포함할 수 있으며, 구체적인 일례로 플리에틸렌글리콜(polyethlene glycol) 등을 포함할 수 있으나, 이에 제한되지 않는다. 본 발명의 일 실시예에 따른 글리콜계 고분자는 식각 조성물 총중량을 기준으로, 0.1 내지 30 중량%로 첨가될 수 있으며, 보다 좋게는 1 내지 20 중량%, 더욱 좋게는 5 내지 15 중량%로 첨가되는 것이 바람직할 수 있다. 상기의 범위 내에서 글리콜계 고분자는 과산화수소 분해 반응에 대한 제어 효과가 우수하고, 식각능을 저하시키지 않아 바람직할 수 있다.The etching composition according to an embodiment of the present invention may further include a glycol-based polymer, and as a specific example, may include polyethylene glycol, but is not limited thereto. The glycol-based polymer according to an embodiment of the present invention may be added in an amount of 0.1 to 30% by weight, more preferably 1 to 20% by weight, and even more preferably 5 to 15% by weight, based on the total weight of the etching composition. It may be desirable. Within the above range, the glycol-based polymer may be preferable because it has excellent control effect on the hydrogen peroxide decomposition reaction and does not degrade etchability.
본 발명의 일 실시예에 따른 식각 조성물은 금속 또는 금속막의 식각시, 식각 속도조절이 용이하며, 또한 식각 프로파일(etch profile)이 우수하고, 배선의 직진성이 우수하다. 또한 잔사의 완전제거가 가능하여 TFT-LCD 게이트 및 소스/드레인 전극용으로 사용하는 전이금속막, 특히 구리를 포함하는 막의 식각 조성물로 매우 유용하게 사용될 수 있다.The etching composition according to an embodiment of the present invention is easy to control an etching rate when etching a metal or a metal film, has an excellent etch profile, and excellent linearity of wiring. In addition, since the residue can be completely removed, it can be very usefully used as an etching composition for a transition metal film used for TFT-LCD gates and source/drain electrodes, especially a film containing copper.
또한 본 발명의 일 실시예에 따른 식각 조성물은 이중금속막, 특히 구리/몰리브덴막 또는 구리/티타늄막의 식각공정에 이용되어 앞서 언급된 장점과 더불어 금속막의 계면을 보호하여 계면 과식각을 억제하고 안정성이 우수하여 테이퍼 앵글, 시디 로스 및 시각 직진성 등의 식각 특성을 개선시킬 수 있다.In addition, the etching composition according to an embodiment of the present invention is used in the etching process of a double metal film, particularly a copper/molybdenum film or a copper/titanium film. In addition to the aforementioned advantages, the etching composition protects the interface of the metal film to suppress interfacial overetching and stability. This is excellent, and it is possible to improve etching characteristics such as taper angle, CD loss, and visual straightness.
이에 따라 본 발명의 일 실시예에 따른 식각 조성물은 액정표시장치의 TFT(Thin Film Transistor)를 구성하는 게이트,소오스 또는 드레인 전극용 금속배선 재료로서 이중금속막 또는 다중금속막 특히 구리/몰리브덴 막을 사용하는 경우 금속배선 패턴을 형성하기 위한 식각 조성물로서 유용하게 사용될 수 있다.Accordingly, the etching composition according to an embodiment of the present invention uses a double metal film or a multimetal film, especially a copper/molybdenum film, as a metal wiring material for a gate, source, or drain electrode constituting a TFT (Thin Film Transistor) of a liquid crystal display. If so, it may be usefully used as an etching composition for forming a metal wiring pattern.
본 발명의 일 실시예에 따른 식각 조성물은 금속막의 식각에 사용될 수 있는 조성물로 본 발명에 기재된 금속막은 금속, 비금속 또는 전이금속을 모두 포함하는 것을 의미하며, 바람직하게 전이금속일 수 있으며, 금속 또는 전이금속이 단독으로 포함될 수 있으며, 또는 금속 또는 전이금속들의 혼합금속일 수 있다.The etching composition according to an embodiment of the present invention is a composition that can be used for etching a metal film, and the metal film described in the present invention means containing all of a metal, a non-metal, or a transition metal, preferably a transition metal, and a metal or The transition metal may be included alone, or may be a metal or a mixed metal of transition metals.
구체적으로, 금속단독막, 금속합금막 또는 금속산화막일 수 있으며, 금속산화막의 일례로, ITO, IZO, IGZO 등을 들 수 있다.Specifically, it may be a single metal film, a metal alloy film, or a metal oxide film, and examples of the metal oxide film include ITO, IZO, IGZO, and the like.
본 발명의 일 실시예에 따른 식각 조성물이 적용될 수 있는 전이금속 또는 금속막은 구리, 몰리브덴, 티타늄, 인듐, 아연, 주석, 텅스텐, 은, 금, 크롬, 망간, 철, 코발트, 니켈 및 나이오븀에서 선택되는 하나 또는 둘 이상의 금속 또는 전이금속이 포함된 막일 수 있으며, 구체적인 일례로 구리막, 구리/몰리브덴막, 구리/티타늄막, 구리/몰리브덴합금막, 구리/인듐합금막일 수 있으며, 바람직하게 구리/몰리브덴합금막일 수 있다.The transition metal or metal film to which the etching composition according to an embodiment of the present invention can be applied is from copper, molybdenum, titanium, indium, zinc, tin, tungsten, silver, gold, chromium, manganese, iron, cobalt, nickel, and niobium. It may be a film containing one or two or more selected metals or transition metals, and specific examples include a copper film, a copper/molybdenum film, a copper/titanium film, a copper/molybdenum alloy film, a copper/indium alloy film, and preferably copper. /It may be a molybdenum alloy film.
본 발명의 일 실시예에 따른 구리/몰리브덴막 또는 구리/몰리브덴합금막은 하나이상의 구리(Cu)막과 1이상의 몰리브덴(Mo)막 및/또는 몰리브덴합금막(Mo-alloy)이 상호 적층된 다중막일 수 있으며, 상기 다중막은 Cu/Mo(Mo-alloy)이중막, Cu/Mo(Mo-alloy)/Cu 또는 Mo(Mo-alloy)/Cu/Mo(alloy)의 삼중막을 포함할 수 있다. 상기 막의 순서는 기판의 물질, 접합성에 따라 적절히 조절할 수 있다.The copper/molybdenum film or copper/molybdenum alloy film according to an embodiment of the present invention is a multilayer in which at least one copper (Cu) film and at least one molybdenum (Mo) film and/or a molybdenum alloy film (Mo-alloy) are stacked together. The multilayer may include a Cu/Mo (Mo-alloy) double layer, a Cu/Mo (Mo-alloy)/Cu or a Mo (Mo-alloy)/Cu/Mo (alloy) triple layer. The order of the films can be appropriately adjusted according to the material and bonding properties of the substrate.
본 발명의 일 실시에 따른 몰리브데늄합금막은 몰리브데늄-텡스텐(Mo-W), 몰리브데늄-티타늄(Mo-Ti), 몰리브데늄-니오비늄(Mo-Nb), 몰리브데늄-크롬(Mo-Cr) 또는 몰리브데늄-탄탈륨(Mo-Ta)으로 구성될 수 있으며, 상기 몰리브데늄막 또는 몰리브데늄합금막은 잔사없이 효율적인 식각을 하기 위한 측면에서 100 ~ 500Å, 상기 구리막은 1000 ~ 10,000Å의 두께를 갖도록 증착할 수 있다.Molybdenum alloy film according to an embodiment of the present invention is molybdenum-tungsten (Mo-W), molybdenum-titanium (Mo-Ti), molybdenum-niobium (Mo-Nb), molybdenum It may be composed of denier-chromium (Mo-Cr) or molybdenum-tantalum (Mo-Ta), and the molybdenum film or molybdenum alloy film is 100 to 500 Å in terms of efficient etching without residue, the The copper film may be deposited to have a thickness of 1000 Å to 10,000 Å.
또한 본 발명은 본 발명의 식각 조성물을 금속막에 접촉시켜 금속막을 식각하는 단계를 포함하는 금속막의 식각방법을 제공한다.In addition, the present invention provides a method for etching a metal film including the step of etching the metal film by contacting the etching composition of the present invention with the metal film.
본 발명의 식각 조성물을 이용한 금속막의 식각방법은 본 발명의 식각 조성물을 이용하는 것을 제외하고는 당업자가 인식할 수 있는 통상의 방법에 따라 실시될 수 있다.The etching method of the metal film using the etching composition of the present invention may be performed according to a conventional method recognized by those skilled in the art, except for using the etching composition of the present invention.
구체적으로는 기판 상에 금속막을 증착하는 단계; 상기 금속막 상에 포토레지스트 막을 형성한 후 패턴화하는 단계; 및 본 발명의 식각 조성물을 사용하여 상기 패턴화된 포토레지스트막이 형성된 금속막을 식각하는 단계를 포함하여 금속막을 식각할 수 있으며, 이때,상기 기판 위에 형성되는 금속막은 단일막, 이중금속막 또는 다중금속막(다층금속막)일 수 있으며, 이중금속막 또는 다중금속막일 경우 그 적층 순서가 특별히 한정되지 않는다.Specifically, depositing a metal film on the substrate; Patterning after forming a photoresist layer on the metal layer; And etching the metal layer on which the patterned photoresist layer is formed by using the etching composition of the present invention, wherein the metal layer formed on the substrate is a single layer, a double metal layer, or a multimetal layer. It may be a film (multilayer metal film), and in the case of a double metal film or a multimetal film, the order of lamination is not particularly limited.
또한 상기 식각방법은 기판과 전이금속막 사이 즉 ,기판과 전이금속막 사이 일례로 구리/몰리브덴 막일 경우 기판과 구리막 사이 또는 기판과 몰리브덴 막 사이에 반도체 구조물을 형성하는 단계를 포함할 수 있다.In addition, the etching method may include forming a semiconductor structure between the substrate and the transition metal layer, that is, between the substrate and the transition metal layer, for example, between the substrate and the copper layer or between the substrate and the molybdenum layer in the case of a copper/molybdenum layer.
본 발명의 일 실시예에 따른 금속막의 식각방법의 금속막은 구리, 몰리브덴, 티타늄, 인듐, 아연, 주석 및 나이오븀에서 선택되는 하나 또는 둘 이상을 포함하는 것일 수 있으며, 앞서 기재된 바와 같이 금속막은 구리를 포함하는 단일 금속막; 구리 합금막을 포함하는 구리합금막; 및 구리를 포함하는 상부막과 몰리브데늄막 또는 몰리브데늄 합금막을 포함하는 다중막에서 선택되는 것일 수 있으며, 바람직하게는 구리를 포함하는 상부막과 몰리브데늄막 또는 몰리브데늄 합금막을 포함하는 다중막일 수 있다.The metal film of the method for etching a metal film according to an embodiment of the present invention may include one or more selected from copper, molybdenum, titanium, indium, zinc, tin, and niobium, and as described above, the metal film is copper. A single metal film comprising a; A copper alloy film including a copper alloy film; And an upper layer containing copper and a multilayer including a molybdenum layer or a molybdenum alloy layer, and preferably includes an upper layer containing copper and a molybdenum layer or a molybdenum alloy layer. It may be a multi-layer.
또한 본 발명은 본 발명의 식각 조성물을 이용하여 수행되는 식각 공정을 포함하는 반도체 소자의 제조방법을 제공한다. In addition, the present invention provides a method of manufacturing a semiconductor device including an etching process performed using the etching composition of the present invention.
본 발명의 일 실시예에 따른 반도체 소자는 액정표시장치,플라즈마 디스플레이 패널 등 표시장치용 반도체 구조물일 수 있다. 구체적으로는 상기 반도체 구조물은 유전체막, 도전막,및 비정질 또는 다결정 등의 실리콘막 중에서 선택되는 막을 1층 이상 포함하는 것일 수 있으며, 이들 반도체 구조물은 통상의 방법에 따라 제조될 수 있다.The semiconductor device according to an embodiment of the present invention may be a semiconductor structure for a display device such as a liquid crystal display device or a plasma display panel. Specifically, the semiconductor structure may include one or more layers selected from a dielectric film, a conductive film, and a silicon film such as amorphous or polycrystalline, and these semiconductor structures may be manufactured according to a conventional method.
이하 본 발명을 실시예에 의해 상세하게 설명한다. 그러나 하기 실시예는 본 발명을 예시하는 것일 뿐 본 발명의 내용이 하기 실시예에 한정되는 것은 아니다.Hereinafter, the present invention will be described in detail by examples. However, the following examples are only illustrative of the present invention, and the contents of the present invention are not limited to the following examples.
[실시예 1] [Example 1]
과산화수소 20중량%, 5-아미노테트라졸(ATZ) 0.5중량%, 이미노디석신산(Iminodisuccinic acid, IDA) 3중량%, 불화암모늄(Ammonium fluoride, AF) 0.1중량%, 하기 표 1에 기재된 성분 및 잔량의 물을 혼합하여 식각 조성물을 제조하였다.Hydrogen peroxide 20% by weight, 5-aminotetrazole (ATZ) 0.5% by weight, iminodisuccinic acid (IDA) 3% by weight, ammonium fluoride (AF) 0.1% by weight, the components shown in Table 1 and The remaining amount of water was mixed to prepare an etching composition.
[실시예 2 내지 6 및 비교예 1 내지 2] [Examples 2 to 6 and Comparative Examples 1 to 2]
실시예 1에서 하기 표 1에 기재된 성분 및 함량을 달리한 것을 제외하고는 실시예 1과 동일하게 실시하여 식각 조성물을 제조하였다.In Example 1, an etching composition was prepared in the same manner as in Example 1, except that the components and contents shown in Table 1 were different.
[비교예 3][Comparative Example 3]
실시예 1에서 하기 표 1에서 기재된 성분 및 함량을 달리한 것과 불소 화합물을 포함하지 않은 것을 제외하고는 실시예 1과 동일하게 실시하여 식각 조성물을 제조하였다.In Example 1, an etching composition was prepared in the same manner as in Example 1, except that the components and contents described in Table 1 below were different and the fluorine compound was not included.
[비교예 4][Comparative Example 4]
실시예 1에서 하기 표 1에서 기재된 성분 및 함량을 달리한 것과 아민 화합물을 포함하지 않은 것을 제외하고는 실시예 1과 동일하게 실시하여 식각 조성물을 제조하였다.In Example 1, an etching composition was prepared in the same manner as in Example 1, except that the components and contents described in Table 1 below were different and the amine compound was not included.
[비교예 5][Comparative Example 5]
실시예 1에서 하기 표 1에서 기재된 성분 및 함량을 달리한 것과 식각첨가제를 포함하지 않은 것을 제외하고는 실시예 1과 동일하게 실시하여 식각 조성물을 제조하였다.In Example 1, an etching composition was prepared in the same manner as in Example 1, except that the components and contents described in Table 1 below were different and the etching additive was not included.
[비교예 6 내지 7][Comparative Examples 6 to 7]
실시예 1에서 하기 표 1에서 기재된 식각 첨가제의 성분 및 함량을 달리한 것을 제외하고는 실시예 1과 동일하게 실시하여 식각 조성물을 제조하였다.In Example 1, an etching composition was prepared in the same manner as in Example 1, except that the components and contents of the etching additives described in Table 1 were different.
[비교예 8][Comparative Example 8]
실시예 1 실시예 1에서 하기 표 1에서 기재된 언더컷 억제제, 식각첨가제, 아민화합물의 함량을 달리한 것과 pH조절제를 첨가하지 않은 것을 제외하고는 실시예 1과 동일하게 실시하여 식각 조성물을 제조하였다.Example 1 In Example 1, an etching composition was prepared in the same manner as in Example 1, except that the contents of the undercut inhibitor, etch additive, and amine compound described in Table 1 below were different, and a pH adjusting agent was not added.
(wt%)ingredient
(wt%)
화합물Fluorine
compound
pH adjuster
AP:인산수소암모늄, HA: n-헥실아민AP: ammonium hydrogen phosphate, HA: n-hexylamine
[실험예 1] 식각 특성 평가[Experimental Example 1] Etching Characteristics Evaluation
유리기판 상에 두께 4500Å의 구리 막 및 몰리브덴 막을 각각 순차적으로 증착하여 시편을 제작하였다. 상기 시편에 대해 포토리소그래피 공정을 진행하여 패터닝한 레지스트막을 형성하고, 상기 실시예 1 내지 6 및 비교예 1 내지 5의 식각 조성물을 각각 이용하여 구리 및 몰리브덴 막에 대한 식각을 실시하였다. 이때, 상기 식각 공정은 스프레이가 가능한 장비(Mini-etcher ME-001)를 이용하여 32℃에서 측정된 EPD (end point detection)에 50%의 오버에치를 더하여 식각을 진행하였다. EPD측정은 식각 진행시 시편의 색변화를 육안 관찰하여 측정하였으며, 테이퍼 앵글, 몰리브덴 잔사 및 처리매수에 따른 언더컷 발생유무는 주사전자 현미경(Hitachi사, S-4800)을 이용하여 관찰하였다.A specimen was prepared by sequentially depositing a copper film and a molybdenum film having a thickness of 4500 Å on a glass substrate, respectively. A photolithography process was performed on the specimen to form a patterned resist film, and the copper and molybdenum films were etched using the etching compositions of Examples 1 to 6 and Comparative Examples 1 to 5, respectively. In this case, the etching process was performed by adding 50% over-etch to the EPD (end point detection) measured at 32°C using a sprayable equipment (Mini-etcher ME-001). EPD measurement was measured by visually observing the color change of the specimen during the etching process, and the presence or absence of undercut according to the taper angle, molybdenum residue and the number of processed sheets was observed using a scanning electron microscope (Hitachi, S-4800).
식각 발열여부는 식각액의 한계치 처리매수인 7000ppm 농도에서 시편을 32℃ 항온 보관하여 식각액에서 발열 시간을 측정하였다. The heat generation time was measured in the etching solution by storing the specimen at a constant temperature of 32°C at a concentration of 7000ppm, which is the number of sheets treated at the threshold of the etching solution.
측정 시작 후 24시간 이내에 온도가 승온하여 발열이 관찰될 시 발열한 것으로 간주하며, 24시간까지 승온하지 않는 경우 발열하지 않는 것으로 판단하였다. If the temperature rises within 24 hours after the start of the measurement and heat generation is observed, it is considered to have generated heat.
그 결과를 하기 표 2에 기재하였다.The results are shown in Table 2 below.
표 2에서 보이는 바와 같이 본 발명의 실시예 1 내지 6의 식각 조성물은 비교예 1 내지 8의 식각 조성물과 대비하여 식각속도가 매우 우수하며, 식각시 열이 발생되지 않는다.As shown in Table 2, the etching compositions of Examples 1 to 6 of the present invention have very good etching rates compared to the etching compositions of Comparative Examples 1 to 8, and no heat is generated during etching.
또한 본 발명의 식각 조성물은 처리매수가 증가하여도 언더컷이 발생하지 않으며, 몰리브덴 잔사물도 남아 있지 않아 우수한 식각 특성을 가진다.In addition, the etching composition of the present invention does not cause undercuts even when the number of processed sheets increases, and no molybdenum residues remain, so it has excellent etching properties.
이는 본 발명의 식각 조성물이 과산화수소; 인산계 화합물 및 황산계 화합물인 식각 첨가제; pH 조절제; 불소 화합물; 아데닌, 구아닌 또는 이들의 혼합물인 언더컷 억제제; 아민 화합물; 및 잔량의 물의 특정 성분들의 조합에서으로 인해 나타나는 식각특성으로 판단되며, 특히 특정한 식각 첨가제인 황산 및 인산염, 특정한 언더컷 억제제인 아데닌, 구아닌 또는 이들의 혼합물 및 아민 화합물의 조합에 의한 효과인 것으로 판단된다.This is the etching composition of the present invention is hydrogen peroxide; Etching additives such as phosphoric acid compounds and sulfuric acid compounds; pH adjuster; Fluorine compounds; Undercut inhibitors that are adenine, guanine, or mixtures thereof; Amine compounds; And it is judged as an etching characteristic that appears due to the combination of certain components of the remaining amount of water, and in particular, it is judged to be the effect of the combination of sulfuric acid and phosphate as specific etching additives, adenine and guanine as specific undercut inhibitors, or a mixture thereof and an amine compound. .
나아가 아민 화합물과 언더컷 억제제 중량비가 5 내지 10 : 1 범위 외에 해당되는 비교예 1 내지 2 의 경우 잔사 및 발열이 발생하고, 언더컷이 발생되는 문제점이 발생해 아민 화합물과 언더컷 억제제의 중량비가 식각특성에 중요한 영향을 미치는 것을 알 수 있다.Further, in the case of Comparative Examples 1 to 2 in which the weight ratio of the amine compound and the undercut inhibitor is outside the range of 5 to 10:1, residue and heat generation occur, and the problem of undercut occurs, so that the weight ratio of the amine compound and the undercut inhibitor is affected by the etching characteristics. It can be seen that it has a significant impact.
또한 식각 첨가제와 PH 조절제의 중량비가 1 내지 4 : 1의 범위에 해당되는 경우 잔사, 발열 및 언터컷 발생 등에 있어서 보다 향상된 식각 특성을 보임을 알 수 있다. In addition, when the weight ratio of the etch additive and the PH adjuster falls within the range of 1 to 4: 1, it can be seen that more improved etching properties are exhibited in the occurrence of residue, heat generation, and undercut.
Claims (12)
상기 언더컷 억제제와 아민 화합물은 중량비가 1: 5 내지 10인 식각 조성물. Hydrogen peroxide; Etching additives such as phosphoric acid compounds and sulfuric acid compounds; pH regulator; Fluorine compounds; Undercut inhibitors that are adenine, guanine, or mixtures thereof; Amine compounds; And the remaining amount of water,
The undercut inhibitor and the amine compound have a weight ratio of 1: 5 to 10.
상기 아민 화합물은 C4 내지 C10의 알킬아민, C3 내지 C10의 시클로알킬아민 또는 이들의 혼합물인 식각 조성물.The method of claim 1,
The amine compound is a C4 to C10 alkylamine, a C3 to C10 cycloalkylamine, or a mixture thereof.
상기 pH 조절제와 식각 첨가제는 중량비가 1 : 1 내지 4인 식각 조성물.The method of claim 1,
The pH control agent and the etching additive is a weight ratio of 1: 1 to 4 etching composition.
상기 인산계 화합물은 인산, 인산염 또는 이들의 혼합물이며, 황산계 화합물은 황산, 황산염 또는 이들의 혼합물인 식각 조성물.The method of claim 1,
The phosphoric acid-based compound is phosphoric acid, a phosphate, or a mixture thereof, and the sulfuric acid-based compound is sulfuric acid, a sulfate, or a mixture thereof.
상기 조성물은 조성물 총 중량에 대해 과산화수소 10 내지 30중량%, 식각첨가제 0.01 내지 5중량%, pH조절제 0.1 내지 3중량%; 불소 화합물 0.01 내지 1중량%, 언더컷 억제제 0.01 내지 2중량%, 아민 화합물 0.1 내지 5중량% 및 잔량의 물을 포함하는 식각 조성물.The method of claim 1,
The composition comprises 10 to 30% by weight of hydrogen peroxide, 0.01 to 5% by weight of an etching additive, and 0.1 to 3% by weight of a pH adjusting agent based on the total weight of the composition; An etching composition comprising 0.01 to 1% by weight of a fluorine compound, 0.01 to 2% by weight of an undercut inhibitor, 0.1 to 5% by weight of an amine compound, and a balance of water.
상기 불소 화합물은 HF, NaF, KF, AlF3, HBF4, NH4F, NH4HF2, NaHF2, KHF2 및 NH4BF4에서 선택되는 어느 하나 또는 둘 이상인 식각 조성물.The method of claim 1,
The fluorine compound is any one or two or more selected from HF, NaF, KF, AlF 3 , HBF 4 , NH 4 F, NH 4 HF 2 , NaHF 2 , KHF 2 and NH 4 BF 4 .
상기 조성물은 식각억제제 및 킬레이트제 군에서 선택되는 하나 또는 둘 이상을 더 포함하는 식각 조성물.The method of claim 1,
The composition is an etching composition further comprising one or two or more selected from the group of etch inhibitors and chelating agents.
상기 식각억제제는 분자내 산소, 황 및 질소에서 선택되는 하나 또는 둘 이상의 헤테로 원자를 포함하는 헤테로고리 화합물이며,
킬레이트제는 분자내 아미노기와 카르복실산기 또는 포스폰산기를 포함하는 화합물인 식각 조성물.The method of claim 7,
The etch inhibitor is a heterocyclic compound containing one or two or more hetero atoms selected from oxygen, sulfur and nitrogen in the molecule,
An etching composition wherein the chelating agent is a compound containing an amino group, a carboxylic acid group, or a phosphonic acid group in a molecule.
상기 금속막은 구리, 몰리브덴, 티타늄, 인듐, 아연, 주석 및 나이오븀에서 선택되는 하나 또는 둘 이상이 포함하는 것인 금속막의 식각방법.The method of claim 9,
The metal layer etching method of a metal layer comprising one or more selected from copper, molybdenum, titanium, indium, zinc, tin, and niobium.
상기 금속막은 구리를 포함하는 단일 금속막; 구리 합금막을 포함하는 구리합금막; 및 구리를 포함하는 상부막과 몰리브데늄막 또는 몰리브데늄 합금막을 포함하는 다중막에서 선택되는 것인 금속막의 식각방법.The method of claim 10,
The metal film may include a single metal film containing copper; A copper alloy film including a copper alloy film; And an upper layer containing copper and a multilayer including a molybdenum layer or a molybdenum alloy layer.
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