KR20200086590A - Light emitting device and light emitting device package - Google Patents

Abstract

According to an embodiment of the present invention, a light emitting element with increased reliability comprises: a substrate; a bonding layer including a protrusion unit on the substrate; a first insulating layer on the bonding layer; a light emitting structure including a second conductive semiconductor layer disposed on the first insulating layer and electrically connected to the bonding layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer; a second electrode electrically connected to the first conductive semiconductor layer; a contact unit disposed between the protrusion unit and the second conductive semiconductor layer; and a first reflective layer disposed between the contact unit and the protrusion unit. The first reflective layer may be disposed on a part of an upper surface of the bonding layer and an upper surface and a side surface of the protrusion unit.

Description

LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE}

The embodiment relates to a light emitting device and a light emitting device package.

Semiconductor devices including compounds such as GaN and AlGaN have many advantages such as having a wide and easy to adjust band gap energy and can be used in various ways as light emitting devices, light receiving devices, and various diodes.

Particularly, light emitting devices such as light emitting diodes or laser diodes using semiconductor group 3 or 2-6 compound semiconductor materials of semiconductors are red, green, and green due to the development of thin film growth technology and device materials. Various colors such as blue and ultraviolet light can be realized, and white light with high efficiency can be realized by using fluorescent materials or combining colors, and low power consumption, semi-permanent life, and fast response speed compared to conventional light sources such as fluorescent and incandescent lamps It has the advantages of safety, environmental friendliness.

In addition, when a light-receiving device such as a photodetector or a solar cell is manufactured using a semiconductor group III- or 2-6 compound semiconductor material of semiconductors, the development of device materials absorbs light in various wavelength regions to generate a photocurrent. By doing so, it is possible to use light in various wavelength ranges from gamma rays to radio wavelength ranges. In addition, it has the advantages of fast response speed, safety, environmental friendliness, and easy adjustment of device materials, and thus can be easily used in power control or microwave circuits or communication modules.

Therefore, the semiconductor device can replace a light emitting diode backlight, a fluorescent lamp or an incandescent light bulb that replaces a cold cathode tube (CCFL) constituting a backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device. Applications are expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, the application of the semiconductor device can be expanded to high-frequency application circuits, other power control devices, and communication modules.

In recent years, demand for a high-output light-emitting device having a large area is increasing, and in the case of a light-emitting device having a large light-emitting area, a high-density current must be applied. When a high-density current is applied to the light emitting device, heat generated in the light emitting device increases due to the current concentration phenomenon, which may cause a problem that the reliability of the light emitting device decreases.

Looking at the light emitting device of the prior art shown in Figure 1, the light emitting device of the prior art is disposed on the light emitting structure (1) and the light emitting structure (1) is electrically connected to the pad electrode 8 is supplied with power to the Light may be emitted from the light emitting structure 1. As described above, in recent years, demand for a light emitting device requiring a large area has increased, and when power is applied to a large area light emitting device having the same structure as the prior art, current is concentrated in the pad electrode 8 There was a problem that the current spreading effect was lowered.

Embodiments may provide a light emitting device that improves current spreading.

The embodiment can provide a light emitting device with improved reliability.

The light emitting device according to the embodiment includes a substrate; A bonding layer including a protrusion on the substrate; A first insulating layer on the bonding layer; A light emitting structure disposed on the insulating layer and including a second conductive semiconductor layer electrically connected to the bonding layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer; A second electrode electrically connected to the first conductive semiconductor layer; A contact portion disposed between the protrusion and the second conductive type semiconductor layer; And a first reflective layer disposed between the contact portion and the protrusion, and the first reflective layer may be disposed on a portion of the upper surface of the bonding layer and the upper and side surfaces of the protrusion.

In the light emitting device according to the embodiment, light extraction efficiency may be improved.

The electrical characteristics of the light emitting device according to the embodiment may be improved.

1 is a plan view of a light emitting device according to the prior art.
2 is a plan view of a light emitting device according to an embodiment.
3 is a cross-sectional view of A-A' of the light emitting device according to the embodiment.
4 is a view showing a modified example of the second electrode according to the embodiment.
5 is a view showing a modified example of the second electrode according to the embodiment.
6 is a view showing a modified example of the second electrode according to the embodiment.
7 is a view showing a modified example of the second electrode according to the embodiment.
8 is a view showing a modified example of the second electrode according to the embodiment.
9 is a view showing a modified example of the second electrode according to the embodiment.
10 is a view showing a modified example of the second electrode according to the embodiment.
11 is a cross-sectional view of a light emitting device package according to an embodiment.
12 is a perspective view of a lighting device according to an embodiment.

Hereinafter, embodiments will be described with reference to the accompanying drawings. In the description of the embodiment, each layer (film), region, pattern or structure is "on/over" or "under" of the substrate, each layer (film), region, pad or pattern. In the case described as being formed in, "on/over" and "under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criteria for the top / top or bottom of each layer is described based on the drawings, but the embodiment is not limited thereto.

1 and 2, the light emitting device 300 according to the embodiment includes a substrate 11, a bonding layer 12, a plurality of protrusions 15, a first electrode 10, and a first insulating layer ( 30), capping layer 50, first reflective layer 40, second reflective layer 60, contact portion 20, pad electrode 810, branch electrode 811, second electrode 200, second The insulating layer 70, the light emitting structure 100, the second conductive semiconductor layer 110, the active layer 120, the first conductive semiconductor layer 130, may include any one of the passivation layer 90. .

The light emitting device 300 according to the embodiment is electrically connected to the first electrode 10 and the second electrode 200 and includes a first conductive semiconductor layer 130, an active layer 120, and a second conductive semiconductor layer ( 110) may be provided. A first insulating layer 30 is disposed between the first electrode 10 and the second electrode 200 to prevent the first electrode 10 and the second electrode 200 from being electrically connected. Can.

The first electrode 10 may include a substrate 11, a bonding layer 12, and a first reflective layer 40. The first electrode 10 may be electrically connected to the light emitting structure 100. The first electrode 10 may be electrically connected to the second conductive semiconductor layer 110.

The substrate 11 may be formed of a material having excellent thermal conductivity. For example, the substrate 11 is Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, MoCu, Cu-W or a semiconductor substrate in which impurities are injected (eg, Si, Ge, GaN, GaAs , ZnO, SiC, SiGe, etc.). The substrate 11 may be made of a conductive material. In addition, the substrate 11 may be made of an insulating material.

The bonding layer 12 may be disposed on the substrate 11. The bonding layer 12 may include a plurality of protrusions 15 formed by protruding a portion of the upper surface. The protrusion 15 may protrude more than the top surface of the bonding layer 12. The protrusion 15 may be concave in the direction of the bonding layer 12 from the substrate 11. The bonding layer 12 includes a barrier metal or a bonding metal, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd or Ta It can contain. The bonding layer 12 may have a width of 70 µm or more, but is not limited thereto.

The first reflective layer 40 may be disposed on the protrusions 15 of the bonding layer 12, respectively. The first reflective layer 40 may be disposed on a portion of the upper surface of the bonding layer 12. The first reflective layer 40 may be disposed on a portion of the upper surface of the bonding layer 12 and the protrusion 15. The first reflective layer 40 may be disposed around the protrusion 15. The first reflective layer 40 may be disposed between the first insulating layer 30 and the bonding layer 12. The first reflective layer 40 may be disposed between the contact portion 20 and the protrusion 15. The first reflective layer 40 may contact the upper surface of the protruding portion 15 and the lower surface of the contact portion 20. The first reflective layer 40 may surround a side surface of the protrusion 15. The first reflective layer 40 may be disposed on a portion of the upper surface of the bonding layer 12 and the upper and side surfaces of the protrusion 15.

The first reflective layer 40 includes indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAO), indium gallium zinc oxide (IGZZO), indium gallium (IGTO) tin oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuO _x /ITO, Ni, Ag, Ni/IrOx/Au, and Ni/IrO _x / It may include any one of Au / ITO. The first reflective layer 40 may be disposed under the light emitting structure 100 to reflect light emitted from the light emitting structure 100.

The light emitting structure 100 may be disposed on the first electrode 10. The light emitting structure 100 may include a second conductive semiconductor layer 110, an active layer 120, and a first conductive semiconductor layer 130.

The second conductive semiconductor layer 110 may be disposed on the first electrode 10. The second conductive semiconductor layer 110 may be implemented as at least one of a semiconductor compound, for example, a compound semiconductor of group 3-5 or 2-6. The second conductive semiconductor layer 110 may be formed of a single layer or multiple layers. The second conductive type semiconductor layer 110 may be doped with a second conductive type dopant. When the second conductivity-type semiconductor layer 110 is a p-type semiconductor layer, the second conductivity-type dopant may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant.

The second conductive semiconductor layer 110 may include a semiconductor material having a composition formula of In _x Al _y Ga _1-xy P (0≤x≤1, 0≤y≤1, 0≤x+y≤1) However, it is not limited thereto. For example, the second conductive semiconductor layer 110 is formed of any one or more of AlGaP, InGaP, AlInGaP, InP, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP Can be.

The active layer 120 may be disposed on the second conductive semiconductor layer 110. In the active layer 120, electrons (or holes) injected through the first conductive semiconductor layer 130 and holes (or electrons) injected through the second conductive semiconductor layer 110 may meet each other. The active layer 120 may emit light due to a difference in a band gap of an energy band according to a forming material of the active layer 120 when electrons and holes meet. The active layer 120 may emit at least one of ultraviolet, blue, green, and red wavelengths.

The active layer 120 may optionally include a single quantum well, multiple quantum wells (MQWs), a quantum wire structure, or a quantum dot structure. The active layer 120 may be made of a compound semiconductor. The active layer 120 may be embodied as at least one of a compound semiconductor of group 3-5 or 2-6.

The active layer 120 may include a quantum well layer and a quantum barrier layer. When the active layer 120 is implemented in a multi-quantum well structure, the quantum well layer and the quantum barrier layer may be alternately arranged. The quantum well layer and the quantum barrier layer may be disposed of semiconductor materials having a composition formula of In _x Al _y Ga _1-xy P (0≤x≤1, 0≤y≤1, 0≤x+y≤1), respectively. Or, may be formed of any one or more pair structures of GaInP/AlGaInP, GaP/AlGaP, InGaP/AlGaP, InGaN/GaN, InGaN/InGaN, GaN/AlGaN, InAlGaN/GaN, GaAs/AlGaAs, InGaAs/AlGaAs. Does not work. The quantum well layer may be formed of a material having a lower band gap than the quantum barrier layer.

The first conductive semiconductor layer 130 may be disposed on the active layer 120. The first conductive semiconductor layer 130 may be implemented as at least one of a semiconductor compound, for example, a compound semiconductor of group 3-5 or group 2-6. The first conductive semiconductor layer 130 may be formed of a single layer or multiple layers. The first conductivity type semiconductor layer 130 may be doped with a first conductivity type dopant. For example, when the first conductive semiconductor layer 130 is an n-type semiconductor layer, an n-type dopant may be included. The n-type dopant may include, but is not limited to, Si, Ge, Sn, Se, Te.

The first conductive semiconductor layer 130 may include a semiconductor material having a composition formula of In _x Al _y Ga _1-xy P (0≤x≤1, 0≤y≤1, 0≤x+y≤1) However, it is not limited thereto. For example, the first conductive semiconductor layer 130 is formed of any one or more of AlGaP, InGaP, AlInGaP, InP, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP Can be.

The light emitting structure 100 may further include another semiconductor layer on at least one of the first conductive semiconductor layer 130 and the second conductive semiconductor layer 110, but is not limited thereto. The light emitting structure 100 may include at least one of an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction structure by, for example, a stacked structure of a plurality of semiconductor layers.

A light extraction pattern 131 may be formed on the upper surface of the light emitting structure 100. Roughness may be formed on an upper surface of the light emitting structure 100. An uneven pattern may be formed on the upper surface of the light emitting structure 100. Roughness may be formed on an upper surface of the first conductive semiconductor layer 130. A light extraction pattern 131 may be formed on an upper surface of the first conductive semiconductor layer 130. An uneven pattern may be formed on the upper surface of the first conductive semiconductor layer 130. The light extraction pattern formed on the light emitting structure 100 may be formed by a PEC (Photo Electro Chemical) etching process as an example. Accordingly, the external light extraction effect of the light emitting device may be improved by the light extraction pattern formed on the upper surface of the light emitting structure 100.

The passivation layer 90 may be disposed on the surface of the light emitting structure 100. The passivation layer 90 may be disposed around the light emitting structure 100. The passivation layer 90 disposed on the surface of the light emitting structure 100 may be extended to be disposed on a portion of the surface of the second electrode 200. The passivation layer 90 may be disposed on a portion of the upper surface of the second electrode 200. The passivation layer 90 may be disposed between the second electrode and the light emitting structure 100. The passivation layer 90 may include any one of Si02, Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , and AlN.

The second electrode 200 may include a capping layer 50, a second reflective layer 60, a pad electrode 810, and a branch electrode 811. The second electrode 200 may be electrically connected to the light emitting structure 100. The second electrode 200 may be electrically connected to the second conductive semiconductor layer 110.

The capping layer 50 may be disposed on the first insulating layer 30. The capping layer 50 may be disposed under the light emitting structure 100. The capping layer 50 may be disposed under the second reflective layer 60. The capping layer disposed under the light emitting structure may be extended to contact the lower surface of the pad electrode 810. The capping layer 50 disposed under the second conductive semiconductor layer 110 may be extended to be disposed under the second electrode 200. The capping layer 50 may electrically short the second conductive semiconductor layer 110 and the second electrode 200.

The second reflective layer 60 may be disposed on the capping layer 50. The second reflective layer 60 may be disposed under the light emitting structure 100. The second reflective layer 60 may be disposed under the second conductive semiconductor layer 110. The second reflective layer 60 may contact a portion of the lower surface of the second conductive semiconductor layer 110. The upper surface of the second reflective layer 60 may contact the lower surface of the second conductive semiconductor layer 110. The second reflective layer 60 may contact the passivation layer 90.

The second reflective layer 60 is disposed under the light emitting structure 100 and reflects light emitted from the active layer 120 to the top of the light emitting structure 100 to improve light extraction efficiency of the light emitting device.

The pad electrode 810 may be disposed on the first electrode 10. The pad electrode 810 may be disposed on the capping layer 50. The pad electrode 810 may be electrically connected to the second conductive semiconductor layer 110. The branch electrode 811 may extend from the pad electrode 810 and be disposed along the side surface of the light emitting structure 100. The branch electrode 811 may be disposed along an opposite side of the light emitting structure 100. The pad electrode 810 and the branch electrode 811 may be integrally formed, but are not limited thereto. The branch electrode 811 may be disposed along the side surface of the light emitting structure 100 to improve the current spreading effect.

The first insulating layer 30 may be disposed on the first electrode 10. The first insulating layer 30 may be disposed around the protrusion 15 of the bonding layer 12. The first insulating layer 30 may be disposed surrounding the protrusion 15 of the bonding layer 12. The first insulating layer 30 may contact the top surface of the bonding layer 12. The first insulating layer 30 may be disposed between the capping layer 50 and the bonding layer 12.

The first insulating layer 30 may be disposed between the capping layer 50 and the bonding layer 12 to prevent the bonding layer 12 and the capping layer 50 from being electrically connected. The first insulating layer 30 may prevent the first reflective layer 40 from being electrically connected to the first conductive semiconductor layer 130. The first insulating layer 30 may prevent the first electrode 10 and the second electrode 200 from being electrically connected.

The contact portion 20 may be disposed on the protruding portion 15 of the bonding layer 12. The contact part 20 may be disposed on the upper surface of the protrusion 15. The contact portion 20 may be disposed on the first reflective layer 40. The contact portion 20 may be disposed between the protrusion 15 and the first conductive semiconductor layer 130. The side surface of the contact portion 20 may be surrounded by the active layer 120. The contact portion 20 may be disposed on the protruding portion 15 to contact the first conductive semiconductor layer 130.

The first insulating layer 30 may be disposed between the contact portion 20 and the first conductive semiconductor layer 130, the active layer 120, and the second conductive semiconductor layer 110. The contact part 20 may be electrically connected to the first electrode 10. The contact portion 20 may be electrically connected to the first conductive semiconductor layer 130. The top surface of the contact portion 20 may be disposed higher than the top surface of the active layer 120. The contact portion 85 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo. The first conductive semiconductor layer 130 and the first electrode 10 are connected inside the light emitting structure 100 by the contact portion 20 to improve a current spreading effect.

The second insulating layer 70 may be disposed inside the light emitting structure 100. The second insulating layer 70 may be disposed around the contact portion 20. The second insulating layer 70 is disposed surrounding the side surface of the contact portion 20 so that the active layer 120 and the second conductive semiconductor layer 110 and the contact portion 20 are electrically shorted. Can be prevented.

In the light emitting device 300 according to the embodiment, the first electrode 10 and the first conductive semiconductor layer 130 are electrically connected to the second electrode 200 by the contact portion 20 inside the light emitting structure 100. As it wraps around the side of the light emitting structure 100 and is disposed, it can be connected and improve the current spreading effect. In addition, light emitted from the active layer 120 is reflected by the first reflective layer 40 disposed on the protrusion 15 of the bonding layer 12 to improve light extraction efficiency of the light emitting device.

Next, FIG. 3 is a view showing a modified example of the second electrode according to the embodiment.

In the light emitting device according to the embodiment of FIG. 3, the contents described in the light emitting device according to the embodiment shown in FIGS. 1 and 2 may be adopted, and in the following, the main features of the modified example of the second electrode 200 Will be described.

The second electrode 200 may include a pad electrode 820 and a branch electrode 821. The pad electrode 820 may be disposed on the side surface of the light emitting structure 100. The branch electrode 821 may extend from the pad electrode 820 and be disposed along the side surface of the light emitting structure 100. The branch electrode 821 may be disposed along a side surface perpendicular to a side surface of the light emitting structure 100 in which the pad electrode 820 is disposed. The branch electrode 821 may not be disposed on any one of four sides of the light emitting structure 100. The pad electrode 820 and the branch electrode 821 may be integrally formed, but are not limited thereto.

Next, FIG. 4 is a view showing a modified example of the second electrode 200 according to the embodiment.

In the light emitting device according to the embodiment of FIG. 4, the contents described in the light emitting device according to the embodiments shown in FIGS. 1 and 2 may be adopted, and in the following, the main features of the modified example of the second electrode 200 Will be described.

The second electrode 200 may include a pad electrode 830. The pad electrode 830 may be disposed along one side of the light emitting structure 100. The pad electrode 830 may be disposed along at least one of four sides of the light emitting structure 100.

Next, FIG. 5 is a view showing a modified example of the second electrode 200 according to the embodiment.

In the light emitting device according to the embodiment of FIG. 5, the contents described in the light emitting device according to the embodiment shown in FIGS. 1 and 2 may be adopted, and in the following, the main features of the modified example of the second electrode 200 Will be described.

The second electrode 200 may include the pad electrode 840. The pad electrode 840 may be disposed along the side surface of the light emitting structure 100. The second electrode 200 may be disposed along all sides of the light emitting structure 100.

Next, FIG. 6 is a view showing a modified example of the second electrode 200 according to the embodiment.

In the light emitting device according to the embodiment of FIG. 6, the contents described in the light emitting device according to the embodiments shown in FIGS. 1 and 2 may be adopted, and in the following, the main features of the modified example of the second electrode 200 Will be described.

The second electrode 200 may include a pad electrode 810. The pad electrode 850 may be disposed along the side surface of the light emitting structure 100. The pad electrodes 850 may be disposed to be spaced apart from each other along at least two sides of the four sides of the light emitting structure 100. The pad electrode 850 may be disposed along two opposite sides of the four sides of the light emitting structure 100.

Next, FIG. 7 is a view showing a modified example of the second electrode 200 according to the embodiment.

In the light emitting device according to the embodiment of FIG. 7, the contents previously described in the light emitting device according to the embodiments shown in FIGS. 1 and 2 may be adopted, and in the following, the main characteristics of the modified example of the second electrode 200 will be described. Will be described.

The second electrode 200 may include a pad electrode 860. The pad electrode 860 may be disposed in an edge region of the light emitting structure 100. The pad electrodes 860 may be spaced apart from each other and disposed in an edge region of the light emitting structure 100.

Next, FIG. 8 is a view showing a modified example of the second electrode 200 according to the embodiment.

In the light emitting device according to the embodiment of FIG. 8, the contents previously described in the light emitting device according to the embodiments shown in FIGS. 1 and 2 may be adopted, and in the following, the main features of the modified example of the second electrode 200 will be described. Will be described.

The second electrode 200 may include a pad electrode 870. The pad electrode 870 may be disposed along two opposite sides of the light emitting structure 100. The width of the pad electrode 870 may be narrower from one side to the other.

Next, FIG. 9 is a view showing a modified example of the second electrode 200 according to the embodiment.

In the light emitting device according to the embodiment of FIG. 9, the contents described in the light emitting device according to the embodiments shown in FIGS. 1 and 2 may be adopted, and in the following, the main features of the modified example of the second electrode 200 Will be described.

The second electrode 200 may include a pad electrode 880 and a branch electrode 881. The pad electrode 880 may be disposed on one side of the light emitting structure 100. The branch electrode 881 may be disposed to extend from the pad electrode 880. The width of the branch electrode 881 may be smaller than the width of the pad electrode 880. The branch electrode 881 may extend from the pad electrode 880 and be disposed toward a side facing the side where the pad electrode 880 is disposed. The pad electrode 880 and the branch electrode 881 may be integrally formed, but are not limited thereto.

Next, FIG. 10 is a sectional view showing a light emitting device package including the light emitting device 300 according to the embodiment.

Referring to FIG. 10, the light emitting device package 1000 includes a package body 1100, a first electrode 1200 and a second electrode 1300 disposed on the package body 1100, and the package body A light emitting device 300 disposed on the 1100 and electrically connected to the first electrode 1200 and the second electrode 1300 and a molding member 1400 surrounding the light emitting device 300 may be included. have.

The package body 1100 may be formed of a silicon material, a synthetic resin material, or a metal material. The package body 1100 may be formed with an inclined surface on the side surface of the light emitting device.

The first electrode 1200 and the second electrode 1300 may be electrically separated from each other. The first electrode 1200 and the second electrode 1300 may serve to provide power to the light emitting device 300. The first electrode 1200 and the second electrode 1300 may serve to increase light efficiency by reflecting light generated from the light emitting device 300. The first electrode 1200 and the second electrode 1300 may serve to discharge heat generated from the light emitting device 300 to the outside.

The light emitting device 300 may be disposed on the package body 1100. The light emitting device 300 may be disposed on the first electrode 1200 or the second electrode 1300.

The light emitting device 300 may be electrically connected to the first electrode 1200 and/or the second electrode 1300 by any one of a wire method, a flip chip method, and a die bonding method. In an embodiment according to the present invention, the light emitting device 300 and the first electrode 1200 are illustrated as being electrically connected through a wire, but are not limited thereto.

In addition, the molding member 1400 may surround the light emitting device 300 to protect the light emitting device 300. The molding member 1400 may include a phosphor. The phosphor included in the molding member 1400 may change the wavelength of light emitted from the light emitting device 300.

The above-described light emitting device is composed of a light emitting device package, and may be used as a light source of an illumination system, for example, it may be used as a light source of a video display device or a lighting device.

Next, FIG. 11 is an exploded perspective view of the lighting device according to the embodiment.

Referring to FIG. 11, the lighting device according to the embodiment includes a cover 2100, a light source module 2200, a heat radiator 2400, a power supply 2600, an inner case 2700, and a socket 2800. It can contain. In addition, the lighting device according to the embodiment may further include any one or more of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device or a light emitting device package according to an embodiment.

The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250. The member 2300 is disposed on the upper surface of the radiator 2400, and has a plurality of light source parts 2210 and guide grooves 2310 into which the connector 2250 is inserted.

The holder 2500 closes the storage groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 accommodated in the insulation portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510.

The power supply unit 2600 may include a protrusion 2610, a guide unit 2630, a base 2650, and an extension unit 2670. The inner case 2700 may include a molding unit together with the power supply unit 2600 therein. The molding portion is a portion in which the molding liquid is hardened, so that the power supply unit 2600 can be fixed inside the inner case 2700.

Meanwhile, the light emitting device and the light emitting device package according to the embodiment may be applied to a light source device.

Further, the light source device may include a display device, a lighting device, a head lamp, and the like according to the industrial field.

As an example of a light source device, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module that emits light and includes a light emitting element, and is disposed in front of the reflector and guides light emitted from the light emitting module forward A light guide plate, an optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, of the display panel It may include a color filter disposed in front. Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. Also, the display device does not include a color filter, and may have a structure in which light emitting elements emitting red, green, and blue light are disposed respectively.

As another example of the light source device, the head lamp includes a light emitting module including a light emitting device package disposed on a substrate, a reflector reflecting light emitted from the light emitting module in a predetermined direction, for example, forward, and reflected by the reflector It may include a lens that refracts light forward, and a shade that is reflected by a reflector to block or reflect a portion of light directed to the lens to form a light distribution pattern desired by the designer.

The lighting device, which is another example of the light source device, may include a cover, a light source module, a heat radiator, a power supply unit, an inner case, and a socket. Further, the light source device according to the embodiment may further include any one or more of the member and the holder. The light source module may include a light emitting device package according to an embodiment.

The features, structures, and effects described in the above embodiments are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, and the like exemplified in each embodiment may be combined or modified for other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiment.

Although the embodiments have been mainly described above, these are merely examples and do not limit the embodiments, and those who have ordinary knowledge in the field to which the embodiments belong may not be exemplified in the above without departing from the essential characteristics of this embodiment. You will see that it is possible to modify and apply branches. For example, each component specifically shown in the embodiment can be implemented by modification. In addition, differences related to such modifications and applications should be interpreted as being included in the scope of the embodiments set in the appended claims.

DESCRIPTION OF SYMBOLS 11 Substrate 12 Bonding layer 15 Protrusion 10 First electrode
30: first insulating layer 40: first reflective layer 200: second electrode 100: light emitting structure

Claims (9)

Board;
A bonding layer including a protrusion on the substrate;
A first insulating layer on the bonding layer;
A light emitting structure disposed on the first insulating layer and including a second conductive semiconductor layer electrically connected to the bonding layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer ;
A second electrode electrically connected to the first conductive semiconductor layer;
A contact portion disposed between the protrusion and the second conductive type semiconductor layer; And
And a first reflective layer disposed between the contact portion and the protrusion,
The first reflective layer is a light emitting device that is disposed on a portion of the upper surface of the bonding layer and the upper and side surfaces of the protrusion. According to claim 1,
The contact portion is a light-emitting element surrounded by the active layer. According to claim 2,
The upper surface of the contact portion is disposed higher than the active layer. According to claim 2,
The contact portion is disposed on the protrusion and the light-emitting element in contact with the first conductive semiconductor layer. According to claim 2,
The first reflective layer is a light emitting device that contacts the upper surface of the protrusion and the lower surface of the contact portion. The method of claim 5,
The first reflective layer is a light emitting device surrounding the side of the protrusion. According to claim 4,
The first insulating layer is a light emitting device that electrically insulates the second electrode and the bonding layer. The method of claim 7,
A light emitting device comprising a second reflective layer disposed between the first insulating layer and the light emitting structure. The method of claim 8,
And a capping layer disposed between the first insulating layer and the light emitting structure,
The capping layer disposed under the light emitting structure extends to contact the bottom surface of the second electrode.

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