KR20200086025A - Wafer processing chamber for wet clean equipment with temperature and humidity adjustable heater - Google Patents

Abstract

The present invention relates to a wafer process chamber for wet clean equipment with a temperature and humidity adjustable heater. More specifically, a heater unit is configured so that outside air can be easily supplied to the chamber by heating the outside air through the heater, and the temperature of a heater unit is always measured to prevent overheating while a fan filter unit (FFU) and the heater unit are integrally installed in the chamber, and the temperature and humidity inside the chamber is always measured to control the temperature and humidity of the incoming outside air through driving control of the heater unit in order to always maintain the temperature and humidity inside the chamber under preset conditions, thereby constantly produce high-quality wafers.

Description

Wafer processing chamber for wet clean equipment with temperature and humidity adjustable heater

In the present invention, in the wafer processing chamber for clean equipment, the heater is configured to easily supply the outside air to the chamber by heating the outside air through the heater, and the temperature of the heater is constantly measured to prevent overheating. Integrally equipped with a heater and an air inlet, the temperature of the outside air is raised to lower the humidity, thereby maintaining the environment in the wafer process chamber at a preset condition having temperature and humidity for optimal wafer quality, thereby maintaining excellent wafer quality. It relates to a wafer process chamber for Ÿ‡ clean equipment with a temperature and humidity controlled heater that enables production.

In general, after the wafer cleaning process is performed, a drying process of drying the pure water on the wafer is performed. In this drying process, a spin-drying method using centrifugal force and isopropyl alcohol are used to react with the pure water on the wafer. And a method of drying the wafer.

In the conventional wafer drying chamber using the spin dryer method, the conventional wafer drying chamber is a body having a glove having a predetermined depth in the center, and a hinge-coupled opening and closing opening coupled to a cylinder at one end of the body, so that a carrier containing the wafer is drawn in. , A cover to be pulled out, a cradle installed on the upper surface of the body and seated with a carrier, a rotor inserted into the glove to rotate the cradle, and coupled with a rotating shaft at a lower center of the rotor to rotate the rotor It comprises a rotating motor for applying. These are common configurations.

However, in the case of these chambers, depending on the temperature/humidity of the outside air flowing in, the temperature and humidity conditions inside each chamber may not be the same and may be different, and thus the internal conditions for each of the plurality of chambers are different, resulting in wafers of different quality. Was produced, and there was a problem in producing excellent wafers of the same quality.

Republic of Korea Utility Model Publication Room 2000-0018932 (released on October 25, 2000)

The present invention has been devised to solve the above problems, and an object of the present invention is to configure a heater unit composed of an IR heater and a heat radiation plate, while having a structure capable of efficiently supplying heated air toward the interior of the chamber, temperature Measured by the above, if it is above the preset temperature range, it is provided with a safety means that can automatically cut off the drive of the heater.

In addition, by installing the FFU and the heater unit integrally inside the chamber itself, and allowing the temperature inside the chamber to be sensed in real time, hot air is introduced into the chamber to increase the temperature inside the chamber, and exhausted through an exhaust device. It is intended to improve the drying capacity by raising the temperature inside the chamber and lowering the humidity, such as lowering the humidity. By controlling the driving of the heater so that the inside of the chamber is always maintained at the temperature and humidity of the preset conditions, the inside of the chamber has a constant average value. It relates to a wafer processing chamber for a clean equipment having a temperature and humidity controlled heater to maintain uniformly produced wafers of excellent quality.

Other objects and advantages of the present invention will be described below, and will be learned by embodiments of the present invention. In addition, the objects and advantages of the present invention can be realized by means and combinations indicated in the claims.

The present invention as a means for solving the above problems,

A wafer process chamber for wet clean equipment, comprising: a chamber 10 in which a wafer 20 to be dried after chemical cleaning and water washing processes is mounted; A rotating body 30 installed in the chamber 10 to rotate the wafer to be dried 20 at a preset speed while being mounted on the upper surface; A heater unit 40 spaced apart from the upper portion of the wafer 20 to be dried in the chamber 10 to increase the temperature of the inflowing air to control humidity; The air inlet 50 is installed at the bottom of the heater unit 40 so that the outside air whose temperature and humidity are controlled in the heater unit 40 is uniformly supplied over the entire surface of the wafer 20 to be dried. ; When the measurement temperature of the plurality of temperature/humidity sensors 60 around the wafer 20 to be dried in the chamber 10 is received, and when the temperature is lower than or equal to a preset temperature, the heater unit 40 is operated to bring the temperature inside the chamber 10 and It is made of a control unit 70 to ensure that the humidity is always maintained in a preset condition; the heater unit 40 is a heater 41 for heating; The heater 41 is spaced apart from the inner upper surface, and the heat radiation plate prevents heat transfer to the upper portion so that heat is applied only to the lower portion when the heater 41 generates heat while allowing local air to be opened in all directions to allow inflow of outside air ( 42); It is characterized by consisting of.

As described above, the present invention has an effect capable of efficient heat dissipation of the heater.

In addition, the present invention can always detect the overheating of the heater, it is possible to control the driving of the heater unit, there is an effect of efficient use and prevention of safety accidents.

In addition, the present invention is a high-quality wafer by constantly maintaining the temperature and humidity in the chamber at a preset level by integrally configuring a heater unit to lower the humidity by raising the temperature of the outside air inside the chamber and an air inlet unit supplying the same. It has the effect of making it possible to produce continuously and continuously.

In addition, the present invention has an effect that the structure and structure are easy to manufacture.

In addition, the present invention has an effect of improving the adsorption of liquid particles in the chamber on the wafer after the drying process.

In addition, the present invention has an effect that the internal organs of the chemical chamber are suppressed from contamination due to accumulated humidity.

In addition, the present invention has an effect of improving the instability of rapid cooling of the wafer after the wafer high temperature dry process is finished.

In addition, the present invention has an effect that is easy to apply and manage the internal temperature and humidity standardization between the chambers of the installation.

In addition, the present invention has an effect capable of detecting an abnormality in humidity and early detection of defects when the defective chemicals of the spindle are rotated.

In addition, the present invention has an effect of improving quality due to particle reduction and yield (yield) improvement.

In addition, the present invention has an effect capable of monitoring the nano-environment management in the wafer movement section in the equipment.

In addition, the present invention can be applied to a variety of automated interlock management, and has the effect of shortening the drying time of the process.

1 is a view of one embodiment showing the installation of the wafer holding chamber according to the present invention.
2 to 4 are views of an embodiment showing a heater according to the present invention.
5 is a view showing a cross section of a heater according to the present invention.
6 is a view of one embodiment showing a wafer holding chamber according to the present invention.
7 to 9 are views for explaining the necessity of temperature and humidity management in the fixing chamber of a wedge according to the present invention.

Before describing the various embodiments of the present invention in detail, it will be appreciated that its application is not limited to the details of the configurations and arrangements of components described in the following detailed description or illustrated in the drawings. The present invention can be implemented and implemented in other embodiments and can be performed in a variety of ways. In addition, the device or element orientation (eg "front", "back", "up", "down", "top", "bottom") The expressions and predicates used herein with respect to terms such as “, “left”, “right”, “lateral”, etc. are only used to simplify the description of the present invention, and related devices Or you will see that the element simply indicates or does not mean that it should have a specific direction. Also, terms such as “first” and “second” are used in the present application and the appended claims for explanation and are not intended to indicate or mean relative importance or purpose.

The present invention has the following features to achieve the above object.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, the terms or words used in the present specification and claims should not be construed as being limited to ordinary or lexical meanings, and the inventor appropriately explains the concept of terms to explain his or her invention in the best way. Based on the principle that it can be defined, it should be interpreted as meanings and concepts consistent with the technical spirit of the present invention.

Therefore, the embodiments shown in the embodiments and the drawings described in this specification are only the most preferred embodiments of the present invention and do not represent all of the technical spirit of the present invention, and thus can replace them at the time of application. It should be understood that there may be equivalents and variations.

Looking at one embodiment according to the present invention,

A wafer process chamber for wet clean equipment, comprising: a chamber 10 in which a wafer 20 to be dried after chemical cleaning and water washing processes is mounted; A rotating body 30 installed in the chamber 10 to rotate the wafer to be dried 20 at a preset speed while being mounted on the upper surface; A heater unit 40 spaced apart from the upper portion of the wafer 20 to be dried in the chamber 10 to increase the temperature of the inflowing air to control humidity; The air inlet 50 is installed at the bottom of the heater unit 40 so that the outside air whose temperature and humidity are controlled in the heater unit 40 is uniformly supplied over the entire surface of the wafer 20 to be dried. ; When the measurement temperature of the plurality of temperature/humidity sensors 60 around the wafer 20 to be dried in the chamber 10 is received, and when the temperature is lower than or equal to a preset temperature, the heater unit 40 is operated to bring the temperature inside the chamber 10 and It is made of a control unit 70 to ensure that the humidity is always maintained in a preset condition; the heater unit 40 is a heater 41 for heating; The heater 41 is spaced apart from the inner upper surface, and the heat radiation plate prevents heat transfer to the upper portion so that heat is applied only to the lower portion when the heater 41 generates heat while allowing local air to be opened in all directions to allow inflow of outside air ( 42); It is characterized by consisting of.

In addition, the heater unit 40 is installed on the heater 41, the first temperature sensor 91 for measuring the temperature change of the heater 41; A second temperature sensor 92 for overheat detection that is installed on the heater 41 and turns off the heater 41 through the control unit 70 when the heater 41 is above a preset temperature range; Bimetal that is installed on the heat dissipation plate 42 to measure the ambient air temperature of the heater 41 and turns off the power of the heater 41 through the control unit 70 when the ambient air temperature exceeds the preset temperature range. A third temperature sensor 93; It characterized in that it comprises a.

In addition, the heater 41 is a metal substrate 45; It is formed on the bottom surface of the metal substrate 45, IR (Infrared) heating element 46 for heat generation; An insulating material 47 formed on an upper surface of the metal substrate 45; An electrical circuit portion 48 located above the insulating material 47 to heat the IR heating element 46 when power is applied; It is characterized by consisting of.

In addition, the horizontally installed on the inner middle of the heat dissipation plate 42, a plurality of outdoor movement hole 44 is a perforated network plate 43; Characterized in that it is further provided.

In addition, the inside of the chamber 10 is characterized in that the temperature and humidity are changed by the heater unit 40 and the preset condition is maintained.

In addition, the chamber 10 is characterized in that the heater portion 40 is installed on the outside of the chamber 10, and the rotating body 30 and the air inlet portion 50 are installed inside the chamber 10.

In addition, the air inlet 50 is characterized in that a FFU (Fan Fiter Unit) is used.

Hereinafter, with reference to Figures 1 to 9 will be described in detail the wafer processing chamber for Ÿ‡ clean equipment having a temperature and humidity control heater according to a preferred embodiment of the present invention.

A wafer processing chamber for a Ÿ‡ clean equipment with a temperature and humidity controlled heater according to the present invention is a wafer process chamber used in a Ÿ‡ clean (WET CLEANING) equipment, that is, a wet cleaning equipment (WET CLEANING EQUIPMENT), a semiconductor wafer surface The cleaning technology can be largely divided into a wet chemical method, a dry method, a vapor phase method, etc. Since this is a well-known technique, detailed descriptions are omitted, and the temperature and humidity controlled heater in the present invention is used. The wafer process chamber for clean equipment includes a chamber 10, a rotating body 30, a heater portion 40, an air inlet portion 50, and a control portion 70.

Explaining the need to manage the temperature and humidity of the process chamber,

Particle management (Fig. 6), nano equipment construction (Fig. 7), and system standardization (Fig. 8) are largely mentioned.

In the case of the particle management, liquid mist during the chamber process is sucked and discharged by exhausting the inside of the soy flour spindle (rotator), but a very small amount rises to the outside of the spindle by the rising air flow by rotation.

This is because, when the exhaust pressure decreases and the change point occurs, the mist forms particles in the chamber panel, and the particles fall off due to airflow change, and thus re-adsorption occurs on the wafer.

In the case of the above-mentioned Nano equipment construction, by applying a high-temperature process (Dry 70%) in a wafer 20-nanometer process, compared to a low-temperature process of more than 30 nanometers in a wafer, there is no need to respond to a rise in wafer temperature when changing the dry high-temperature process, and environmental characteristics among 10 nanoparticles It is necessary to prepare for poor pollution.

In the case of standardization of the above system, through the establishment of a main equipment communication network, operation of the yield data monitoring system, set-up of optimal (same) conditions between each process chamber, interlock application management, and custom design installation and operation are possible. Is what you need.

for teeth,

The plurality of chambers 10 are continuously installed adjacent to each other, and the layers constituting the plurality of chambers 10 are multi-layered to form a wafer 10.

The plurality of chambers 10 are installed in a predetermined closed space 80.

In the case of the wafer 20 to be dried flowing into the chamber 10 in the present invention, after completing the chemical cleaning to add a predetermined chemical component required for the wafer 20 and then washing with water , It is mounted on the chamber 10 of the present invention, to have a drying process.

In addition, these chambers 10 are used for drying the wafer 20 to be dried by introducing outside air into the interior.

The rotating body 30 is rotatably installed by various driving means (motor, etc.) in the above-described chamber 10, and the above-described drying target wafer 20 is mounted on the upper surface of the rotating body 30. It becomes fixed.

In addition, after fixing the wafer 20 to be dried on the upper surface of the rotating body 30, the wafer 20 to be dried is dried by rotating the rotating body 30 (ex: 2000 rpm).

The heater unit 40 is integrally installed in the above-described chamber 10, such that the heater unit 40 can be variously changed according to the shape of the chamber 10 and its installation position.

In the present invention, as described above, it is in the form of being integrally mounted inside or outside the chamber 10, and such a heater unit 40 is connected to the control unit 70 described below to operate, thereby allowing the chamber 10 to be internally installed. It is to increase the temperature of the outside air introduced for drying the rotating body 30 to lower the humidity.

The heater unit 40 for this includes a heater 41, a heat dissipation plate 42, and a mesh plate 43.

The heater 41 is a heater for heat generation, and the heat dissipation plate 42 is provided with a heater 41, which is fixedly spaced at a predetermined interval on the inner upper surface, and a base plate bent downward at each corner of a rectangular plate is installed. The heaters 41 serve to prevent heat transfer to the upper portion so that heat is applied only to the lower portion when the heat is generated, while the four sides are locally opened to allow the inflow of outside air. The mesh plate 43 is horizontally installed at the inner middle of the heat dissipation plate 42 described above, and is a metal plate material having a plurality of outside air moving holes 44 perforated, where foreign matter filtration and a heater 41 are removed and lowered. It is also possible to serve as a protective plate to prevent it from colliding with other devices.

The heater unit 40 is provided with a total of three temperature sensors that are electrically connected to the control unit 70, in addition to the power supply unit 94 to which the power line is connected and the separate temperature sensors installed in the chamber 10, These are the first temperature sensor 91, the second temperature sensor 92, and the third temperature sensor 93.

The first temperature sensor 91 is installed in the above-described heater 41 to measure the temperature change (ex: 0 ~ 150 ℃) of the heater 41, the second temperature sensor 92 is the first Like the temperature sensor 91, but installed in the heater 41, when the heater 41 is above a preset temperature range (ex: 180 °C or more), to turn off the power of the heater 41 through the control unit 70 It is a sensor for detecting overheat.

The third temperature sensor 93 is installed on the heat dissipation plate 42 installed on the upper portion of the heater unit 40 to measure the ambient air temperature of the heater 41, so that the ambient air temperature exceeds the preset temperature range (ex : 100℃ or higher), is a bimetal (Bimetal) that turns off the power of the heater 41 through the control unit 70.

Looking at the structure of the heater 41 constituting the heater unit 40 in more detail above,

Metal substrate 45 (SUS Substrate), formed on the bottom surface of the metal substrate 45, IR (Infrared) heating element 46 for heating, an insulating material 47 coated on the top surface of the metal substrate 45 (Various inorganic-based insulating materials with excellent heat resistance are possible), located on top of the insulating material 47, heats the IR heating body 46 when power is applied (far infrared rays are emitted from the surface layer or the back layer of the heater unit 40) ) To be composed of an electric circuit portion 48 (forming an electric ash from a wiring material and a resistance heating material).

The IR heating element 46 using the SUS Substrate used at this time has a high heating rate, excellent indirect heating by radiation, which is a characteristic of IR, and is coated with a special paste, so it has the effect of particle free, good clean and IR even in vacuum. It can maintain characteristics, can be freely arranged and shaped, and has various effects such as reducing energy consumption.

The air inlet 50 is spaced apart from the upper portion of the above-described rotating body 30 and horizontally installed to be positioned at the bottom of the heater unit 40, the rotating fan 51 positioned at the top, and the rotation FFU (Fan Fiter Unit) is used, which is located at the bottom of the fan and consists of a filter (52, Hefa filter, etc.) that filters air.

That is, in the drawings of the present invention, the upper portion of the air inlet portion 50 has a structure in which the heat dissipation plate 42 is located inside, and the heat dissipation plate 42 with the heater 41 mounted on the inner bottom surface is provided at each corner. It is spaced apart from the upper surface of the air inlet 50 through the support of the horizontal installation.

Of course, the heater 40 is installed at the top of the air inlet 50, but of course, the air inlet 50 and the heater 40 may be separately installed according to a user's embodiment.

The air inlet portion 50 in the present invention is to provide the outside air to the rotating body 30 (more specifically, the wafer 20 to be dried) in the chamber 10 at a constant speed and area.

The control unit 70 is installed in a number of predetermined positions in the chamber 10, connected to the temperature / humidity sensor 60 is installed in the chamber 10, such a control unit 70 is the above-described heater unit 40 ).

That is, the control unit 70 receives the measurement temperature and humidity of the plurality of temperature/humidity sensors 60 around the wafer 20 to be dried in the chamber 10, and when the measurement temperature and humidity are below a preset temperature, the heater unit 40 ) To keep the temperature and humidity constant at the preset temperature and humidity, such as by operating the heater 10 to heat the outside air flowing into the chamber 10 so that the humidity decreases as the temperature rises. It is driven to be controlled.

The control unit 70 measures the temperature and humidity inside the chamber 10 into which the outside air has flowed, and then compares it with the temperature and humidity of the preset conditions preset by the user (temperature and humidity conditions capable of producing the best wafer). , If it is less than or equal to the preset temperature, the temperature and humidity of the preset conditions are controlled by operating the heater unit 40 to control the temperature and humidity of the incoming air (ex: temperature 30°C, humidity 35%) (standard condition is temperature 25 ~27 ℃, humidity 37%) is to keep constant at all times.

Of course, the temperature and humidity of the preset conditions correspond to one embodiment, and according to a user's embodiment, it is a part that can be changed to various temperatures and humidity, so the temperature and humidity of the example are not used as absolute standards. Does not.

As described above, although the present invention has been described by a limited number of embodiments and drawings, the present invention is not limited thereto, and the technical spirit of the present invention and the following will be described by those skilled in the art to which the present invention pertains. Of course, various modifications and changes are possible within the equal scope of the claims to be described.

10: chamber 20: wafer to be dried
30: rotating body 40: heater unit
41: heater 42: heat sink plate
43: mesh plate 44: outdoor moving hole
45: metal substrate 46: IR heating element
47: insulating material 48: electrical circuit
50: air inlet 51: rotating fan
52: filter 60: temperature / humidity sensor
70: control unit 80: enclosed space
91: first temperature sensor 92: second temperature sensor
93: third temperature sensor

Claims (7)

In the wafer process chamber for wet clean equipment,
A chamber 10 on which the wafer 20 to be dried, which has completed the chemical cleaning and water washing processes, is mounted therein;
A rotating body 30 installed in the chamber 10 and rotating at a preset speed while the wafer to be dried 20 is mounted on an upper surface;
A heater unit 40 spaced apart from the upper portion of the wafer 20 to be dried in the chamber 10 to increase the temperature of the inflowing air to control humidity;
The air inlet 50 is installed at the bottom of the heater unit 40 so that the outside air whose temperature and humidity are controlled in the heater unit 40 is uniformly supplied over the entire surface of the wafer 20 to be dried. ;
When receiving the measurement temperature of the plurality of temperature/humidity sensors 60 around the wafer 20 to be dried in the chamber 10, when the temperature is lower than or equal to a preset temperature, the heater unit 40 is operated to bring the temperature inside the chamber 10 and It is made of a control unit 70 to ensure that the humidity is always maintained under the preset conditions;
The heater 40 is
A heater 41 for heat generation;
The heater 41 is spaced apart from the upper surface of the interior, while the four sides are locally opened to allow the inflow of outside air, while the heater 41 heats to the upper side to prevent heat transfer to the upper side so that heat is applied only to the lower side when heating ( 42); Wafer process chamber for a clean equipment having a temperature and humidity control heater, characterized in that consisting of.
According to claim 1,
The heater 40 is
A first temperature sensor 91 installed on the heater 41 and measuring a temperature change of the heater 41;
A second temperature sensor 92 for overheat detection that is installed on the heater 41 and turns off the heater 41 through the control unit 70 when the heater 41 is above a preset temperature range;
Bimetal that is installed on the heat dissipation plate 42 and measures the ambient air temperature of the heater 41 to turn off the heater 41 through the control unit 70 when the ambient air temperature exceeds the preset temperature range. A third temperature sensor 93;
Wafer process chamber for a clean equipment having a temperature and humidity control heater characterized in that it comprises a.
The method according to claim 1 or 2,
The heater 41 is
A metal substrate 45;
It is formed on the bottom surface of the metal substrate 45, IR (Infrared) heating element 46 for heat generation;
An insulating material 47 formed on an upper surface of the metal substrate 45;
An electrical circuit portion 48 located above the insulating material 47 to heat the IR heating element 46 when power is applied;
Wafer process chamber for a clean equipment having a temperature and humidity control heater, characterized in that consisting of.
The method according to claim 1 or 2,
A network plate 43 horizontally installed at the inner middle of the heat dissipation plate 42 and having a plurality of outside air moving holes 44 formed therein;
Wafer process chamber for a clean equipment having a temperature and humidity control heater characterized in that it is further provided.
According to claim 1,
Inside the chamber 10
Ÿ‡ Wafer process chamber for clean equipment with a temperature and humidity controlled heater characterized in that the temperature and humidity are changed by the heater unit 40 and preset conditions are maintained.
According to claim 1,
The chamber 10 is
The heater unit 40 is installed outside the chamber 10,
Ÿ‡ Wafer process chamber for clean equipment having a temperature and humidity controlled heater, characterized in that the rotating body 30 and the air inlet 50 are installed inside the chamber 10.
The method of claim 1 or 6,
The air inlet 50 is
A temperature- and humidity-controlled heater characterized in that a Fan Fiter Unit (FFU) consisting of a rotating fan 51 positioned at the top and a filter 52 positioned at the bottom of the rotating fan to filter air is used. Ÿ‡ Wafer process chamber for clean equipment.

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