KR20200074582A - Narrow bezel electroluminesence display - Google Patents

Abstract

The present application relates to a narrow-bezel electroluminescence display device for preventing oxidation of an element due to penetration of oxygen or moisture from the outside. According to an embodiment of the present invention, the narrow-bezel electroluminescence display device comprises a substrate, pixel driving electrodes, a dam structure, an oxidation prevention structure, and a conductive layer. The substrate includes a display area and a non-display area surrounding the display area. The pixel driving electrodes are disposed in the display area. The dam structure is disposed in the non-display area and surrounds the display area. The oxidation prevention structure is disposed between the dam structure and the display area to surround the display area. The conductive layer is extended and applied to cover the oxidation prevention structure in the display area.

Description

Narrow-bezel electroluminescence display {NARROW BEZEL ELECTROLUMINESENCE DISPLAY}

The present application relates to a narrow-bezel electroluminescent display device. In particular, the present application relates to a narrow-bezel electroluminescent display device that minimizes the process margin of the edge region to minimize the bezel region.

Among the display devices, the electroluminescent display device is a self-emission type, and has excellent viewing angle, contrast ratio, and the like, and does not require a separate backlight, so that it can be lightweight and thin, and has an advantage in that power consumption is advantageous. In particular, among the electroluminescent display devices, the organic light emitting display device has advantages such as DC low voltage driving, fast response speed, and low manufacturing cost.

The electroluminescent display device includes a plurality of electroluminescent diodes. The electroluminescent diode includes an anode electrode, a light emitting layer formed on the anode electrode, and a cathode electrode formed on the light emitting layer. When a high potential voltage is applied to the anode electrode and a low potential voltage is applied to the cathode electrode, holes are transferred from the anode electrode and electrons are transferred from the cathode electrode to the light emitting layer, respectively. When holes and electrons are combined in the light emitting layer, excitons are formed in the excitation process, and light is generated due to energy from the excitons. The electroluminescent display device displays an image by electrically controlling the amount of light generated in the light emitting layers of the plurality of electroluminescent diodes individually divided by the bank.

The electroluminescent display device can be implemented in an ultra-thin form, and has the advantage of making the most of the flexibility characteristic of organic materials. The electroluminescent display device must have a structure to block oxygen or moisture penetrating from the outside to ensure life and quality. In particular, it is very important to develop a structure and technology to prevent oxidation of elements from propagating to the display region due to oxygen and moisture penetrating from the outside in the edge region of the display device.

An object of the present application is to provide an electroluminescent display device that prevents oxidation of elements due to the penetration of oxygen or moisture from the outside. The present application is provided with a structure that limits the maximum area of the device vulnerable to oxidation, thereby limiting the deposition range of the device regardless of the process margin, thereby preventing oxidation and limiting the oxidation so that it does not propagate to the pixel area. It aims to provide.

The flexible electroluminescent display device according to an exemplary embodiment of the present application includes a substrate, pixel driving electrodes, a dam structure, an anti-oxidation structure, and a conductive layer. The substrate includes a display area and a non-display area surrounding the display area. The pixel drive electrodes are disposed in the display area. The dam structure is disposed in the non-display area and surrounds the display area. The anti-oxidation structure is disposed between the dam structure and the display area to surround the display area. The conductive layer is applied so as to cover the anti-oxidation structure in the display region.

In one example, the conductive layer includes a common electrode applied to the inner region of the antioxidant structure and a dummy common electrode applied to the outer region of the antioxidant structure. The common electrode is physically and electrically connected in the region inside the anti-oxidation structure, and is physically disconnected from the dummy common electrode.

For example, it is defined between the anti-oxidation structure and the display area and is applied to an area inside the boundary line surrounding the display area, and further includes a light emitting layer stacked between the pixel driving electrode and the common electrode.

In one example, it further includes a thin film transistor layer, a planarization film, and a bank. The thin film transistor layer includes a thin film transistor disposed in the display area and driving the pixel driving electrode. The planarization film covers the thin film transistor layer. The bank covers the edge region of the pixel driving electrode disposed on the planarization film, and exposes the planarization film in the center of the pixel driving electrode and the region where the anti-oxidation structure is disposed.

In one example, the anti-oxidation structure has an inverse tapered cross-sectional shape within an opening area formed in the bank and exposing a portion of the top surface of the planarization film.

In one example, the conductive layer is stacked on the top of the planarization film exposed to the opening region and on the anti-oxidation structure, but not on the sidewall surface of the anti-oxidation structure.

In one example, it further includes low-resistance wiring stacked under the anti-oxidation structure on the planarization film. In the low-resistance wiring, the upper surface is exposed by the opening area. The conductive layer contacts the low-resistance wiring exposed in the opening region.

In one example, the conductive layer is stacked over the entire surface of the substrate is formed, and further includes an encapsulation layer extending to the outside of the dam structure.

In one example, the encapsulation layer, the first inorganic encapsulation layer overlying the entire surface of the substrate without a disconnection and covering the anti-oxidation structure, the organic encapsulation layer applied only to the inside of the dam structure on the first inorganic encapsulation layer, and the top surface of the organic encapsulation layer It includes a second inorganic encapsulation layer laminated on.

In one example, the anti-oxidation structure has a closed curve shape surrounding the display area.

In the electroluminescent display device, there is a need to secure a margin space in the border area for the purpose of preventing oxidation propagation by oxygen or moisture penetrating from the outside, and minimizing the area of the bezel to secure this margin area It is limited. In the present application, a bezel region of the display panel can be minimized by providing a structure that prevents oxidation by oxygen or moisture penetrating from the outside to propagate to the pixel region. Provided is an electroluminescent display device capable of preventing the penetration of oxygen or moisture even if the bezel region of the border region is minimized, and thus guarantees excellent image quality for a long time.

In addition to the effects of the present application mentioned above, other features and advantages of the present application are described below, or will be clearly understood by those skilled in the art from the description and description.

1 is a plan view showing a narrow-bezel electroluminescent display device according to the present application.
2 is an enlarged plan view showing a structure of a border region in a narrow-bezel electroluminescent display device according to a preferred embodiment of the present application.
3 illustrates a structure of a narrow-bezel electroluminescent display device according to a preferred embodiment of the present application and is a cross-sectional view taken along line I-I' of FIG. 2.
4 is an enlarged cross-sectional view showing an anti-oxidation structure provided in a narrow-bezel electroluminescent display device according to a preferred embodiment of the present application.
5 illustrates a structure of a narrow-bezel electroluminescent display device according to another exemplary embodiment of the present application, and is a cross-sectional view taken along line I-I' of FIG. 2.

Advantages and features of the present application, and a method of achieving them will be clarified with reference to examples described below in detail together with the accompanying drawings. However, the present application is not limited to the examples disclosed below, but will be implemented in various different forms, and only the examples of the present application allow the disclosure of the present application to be complete, and are generally in the art to which the invention of the present application pertains. It is provided to fully inform the person of knowledge of the scope of the invention, and the invention of the present application is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for describing an example of the present application are exemplary, and the present application is not limited to the illustrated matters. The same reference numerals refer to the same components throughout the specification. In addition, in describing an example of the present application, when it is determined that a detailed description of related known technologies may unnecessarily obscure the subject matter of the present application, the detailed description will be omitted.

When'include','have','consist of', etc. mentioned in this specification are used, other parts may be added unless'~man' is used. When a component is expressed as a singular number, the plural number is included unless otherwise specified.

In interpreting the components, it is interpreted as including the error range even if there is no explicit description.

In the case of the description of the positional relationship, for example, when the positional relationship of two parts is described as'~top','~upper','~bottom','~side', etc.,'right' Alternatively, one or more other parts may be located between the two parts unless'direct' is used.

In the case of the description of the time relationship, for example,'after','following','~after','~before', etc., when the temporal sequential relationship is described,'right' or'direct' It may also include cases that are not continuous unless it is used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are only used to distinguish one component from another component. Accordingly, the first component mentioned below may be the second component within the technical spirit of the present application.

It should be understood that the term “at least one” includes all possible combinations from one or more related items. For example, the meaning of “at least one of the first item, the second item, and the third item” means 2 of the first item, the second item, or the third item, as well as the first item, the second item, and the third item, respectively. It can mean any combination of items that can be presented from more than one dog.

Each of the features of the various examples of the present application may be partially or wholly combined with or combined with each other, technically various interlocking and driving may be possible, and each of the examples may be independently implemented with respect to each other or may be implemented together in an association relationship. .

Hereinafter, an example of a narrow-bezel electroluminescent display device according to the present application will be described in detail with reference to the accompanying drawings. In adding reference numerals to the components of each drawing, the same components may have the same reference numerals as possible, even if they are displayed on different drawings.

Hereinafter, a narrow-bezel electroluminescent display device according to the present application will be described with reference to FIG. 1. 1 is a plan view showing a narrow-bezel electroluminescent display device according to the present application. Referring to FIG. 1, the narrow-bezel electroluminescent display device according to the present application includes a substrate (SUB), a pixel (P), a common power wiring (CPL), an anti-oxidation structure (SPI), a dam structure (DM), and a driving unit ( PP, 200, 300).

The substrate SUB is a base substrate (or base layer) and includes a plastic material or a glass material. In particular, in the case of a flexible display device, it is preferable to form a plastic material having excellent flexibility. However, even if it is a glass material, it can be formed in an ultra-thin shape to implement a flexible display device.

The substrate SUB according to an example may have a planar square shape, a square shape in which each corner portion is rounded with a constant radius of curvature, or a non-square shape having at least six sides. Here, the substrate SUB having a non-square shape may include at least one protrusion or at least one notch portion.

The substrate SUB according to an example may be divided into a display area AA and a non-display area IA. The display area AA is provided in the middle area of the substrate SUB, and may be defined as an area for displaying an image. The display area AA according to an example may have a planar square shape, a square shape rounded so that each corner portion has a constant radius of curvature, or a non-square shape having at least six sides. Here, the display area AA having a non-square shape may include at least one protrusion or at least one notch.

The non-display area IA is provided in an edge area of the substrate SUB to surround the display area AA, and may be defined as an area in which an image is not displayed or a peripheral area. The non-display area IA according to an example is provided on the first non-display area IA1 provided on the first edge of the substrate SUB and on the second edge of the substrate SUB parallel to the first non-display area IA1. The second non-display area IA2, the third non-display area IA3 provided on the third edge of the substrate SUB, and the fourth non-display provided on the fourth edge of the substrate SUB parallel to the third non-display area Area IA4 may be included. For example, the first non-display area IA1 is the upper (or lower) edge area of the substrate SUB, and the second non-display area IA2 is the lower (or upper) edge area of the substrate SUB, and the third The non-display area IA3 may be the left (or right) edge area of the substrate SUB, and the fourth non-display area IA4 may be the right (or left) edge area of the substrate SUB, but is not limited thereto. Does not.

The pixel P may be provided on the display area AA of the substrate SUB. A plurality of pixels P according to an example may be arranged in a matrix arrangement and may be disposed in the display area AA of the substrate SUB. The pixel P may be defined by the scan wiring SL, the data wiring DL, and the pixel driving power supply wiring PL.

The scan wiring SL is elongated along the first direction X and is disposed at regular intervals along the second direction Y intersecting the first direction X. The display area AA of the substrate SUB includes a plurality of scan wirings SL spaced from each other along the second direction Y while being parallel to the first direction X. Here, the first direction X may be defined in the horizontal direction of the substrate SUB, and the second direction Y may be defined in the vertical direction of the substrate SUB, but is not limited thereto, and vice versa. It may be.

The data wiring DL extends long along the second direction Y and is arranged at regular intervals along the first direction X. The display area AA of the substrate SUB includes a plurality of data lines DL spaced from each other along the first direction X while being parallel to the second direction Y.

The pixel driving power supply line PL is disposed on the substrate SUB to be parallel to the data line DL. The display area AA of the substrate SUB includes a plurality of pixel driving power supply lines PL parallel to the data lines DL. Alternatively, the pixel driving power supply wiring PL may be arranged to be parallel to the scan wiring SL.

The pixel P according to an example may be disposed to have a stripe structure on the display area AA. In this case, one unit pixel may include a red pixel, a green pixel, and a blue pixel, and further, one unit pixel may further include a white pixel.

The pixel P according to another example may be arranged to have a pentile structure on the display area AA. In this case, one unit pixel may include at least one red pixel, at least two green pixels, and at least one blue pixel arranged in a planar polygonal shape. For example, one unit pixel having a pentile structure may be disposed such that one red pixel, two green pixels, and one blue pixel have an octagonal shape in a plane, in which case the blue pixel is relatively A large sized opening area (or a light emitting area) may be provided, and the green pixel may have a relatively smallest sized opening area.

The pixel P includes a pixel circuit PC electrically connected to the scan wiring SL, a data wiring DL, and a pixel driving power supply wiring PL, and a light emitting device ED electrically connected to the pixel circuit PC. It can contain.

The pixel circuit PC is a light emitting element ED from the pixel driving power supply line PL based on the data voltage supplied from the adjacent data line DL in response to the scan signal supplied from at least one scan line SL. It controls the current (Ied) flowing in.

The pixel circuit PC according to an example may include at least two thin film transistors and one capacitor. For example, the pixel circuit PC according to an example drives the driving thin film transistor that supplies the data current Ied based on the data voltage to the light emitting element ED, and drives the data voltage supplied from the data line DL. A switching thin film transistor supplied to the thin film transistor and a capacitor storing a gate-source voltage of the driving thin film transistor may be included.

The pixel circuit PC according to another example may include at least three thin film transistors and at least one capacitor. For example, the pixel circuit PC according to an example may include a current supply circuit, a data supply circuit, and a compensation circuit according to the operation (or function) of each of the at least three thin film transistors. Here, the current supply circuit may include a driving thin film transistor that supplies the data current Ied based on the data voltage to the light emitting device ED. The data supply circuit may include at least one switching thin film transistor that supplies the data voltage supplied from the data line DL to the current supply circuit in response to the at least one scan signal. The compensation circuit may include at least one compensation thin film transistor that compensates for a change in a characteristic value (threshold voltage and/or mobility) of the driving thin film transistor in response to at least one scan signal.

The light emitting element ED emits light by the data current Ied supplied from the pixel circuit PC to emit light having a luminance corresponding to the data current Ied. In this case, the data current Ied may flow from the pixel driving power supply wiring PL to the common power supply wiring CPL through the driving thin film transistor and the light emitting device ED.

The light emitting device ED according to an example includes a pixel driving electrode (or first electrode or anode) electrically connected to the pixel circuit PC, a light emitting layer formed on the pixel driving electrode, and a common electrode (or a second electrode) electrically connected to the light emitting layer. 2 electrode or cathode (CE).

The common power wiring CPL is disposed on the non-display area IA of the substrate SUB and is electrically connected to the common electrode CE disposed on the display area AA. The common power wiring CPL according to an example is disposed along the second to fourth non-display areas IA2, IA3, and IA4 adjacent to the display area IA of the substrate SUB while having a constant wiring width. A portion except for a portion of the display area AA adjacent to the first non-display area IA1 of (SUB) is enclosed. One end of the common power wiring CPL may be disposed on one side of the first non-display area IA1, and the other end of the common power wiring CPL may be disposed on the other side of the first non-display area IA1. In addition, the second to fourth non-display areas IA2, IA3, and IA4 may be disposed between one end and the other end of the common power wiring CPL. Accordingly, the common power wiring CPL according to an example may have a “∩” shape in which one side corresponding to the first non-display area IA1 of the substrate SUB is planarly opened.

Although a plan view is not shown in FIG. 1, an encapsulation layer may be formed on the substrate SUB to surround the upper surface and side surfaces of the display area AA and the common power wiring CPL. On the other hand, the encapsulation layer may expose one end and the other end of the common power wiring CPL in the first non-display area IA1. The encapsulation layer may prevent oxygen or moisture from penetrating into the light emitting element ED provided in the display area AA. The encapsulation layer according to an example may include at least one inorganic film. The encapsulation layer according to another example may include a plurality of inorganic films and an organic film between the plurality of inorganic films.

The flexible electroluminescent display according to an example of the present application may further include a pad unit PP, a gate driving circuit 200 and a driving integrated circuit 300.

The pad part PP may include a plurality of pads provided in the non-display area IA of the substrate SUB. The pad unit PP according to an example includes a plurality of common power supply pads, a plurality of data input pads, a plurality of power supply pads, and a plurality of control signal input pads provided in the first non-display area IA1 of the substrate SUB. And the like.

The gate driving circuit 200 is provided in the third non-display area IA3 and/or the fourth non-display area IA4 of the substrate SUB to connect one-to-one with the scan wirings SL provided in the display area AA. do. The gate driving circuit 200 is integrated in the third non-display area IA3 and/or the fourth non-display area IA4 of the substrate SUB together with the manufacturing process of the pixel P, that is, the manufacturing process of the thin film transistor. . The gate driving circuit 200 generates a scan signal based on a gate control signal supplied from the driving integrated circuit 300 and outputs the scan signal according to a predetermined order, thereby driving each of the scan lines SL in a predetermined order. The gate driving circuit 200 according to an example may include a shift register.

The dam structure DM is provided in the first non-display area IA1, the second non-display area IA2, the third non-display area IA3, and the fourth non-display area IA4 of the substrate SUB. (AA) It may have a closed curve structure surrounding the periphery. In one example, the dam structure DM is disposed on the outside of the common power wiring CPL to be located on the outermost portion of the substrate 200. The pad portion PP and the driving integrated circuit 300 are preferably disposed outside the dam structure DM.

In FIG. 1, a case where the dam structure DM is disposed at the outermost is illustrated, but is not limited thereto. As another example, the dam structure DM may be disposed between the common power wiring CPL and the gate driving circuit 200. As another example, the dam structure DM may be disposed between the display area AA and the gate driving circuit 200.

The driving integrated circuit 300 is mounted in the chip mounting area defined in the first non-display area IA1 of the substrate SUB through a chip mounting (or bonding) process. The input terminals of the driving integrated circuit 300 are electrically connected to the pad portion PP, and the input terminals of the driving integrated circuit 300 drive a plurality of data lines DL and a plurality of pixels provided in the display area AA. It is electrically connected to the power supply line PL. The driving integrated circuit 300 receives various power sources, timing synchronization signals, and digital image data input from the display driving circuit unit (or host circuit) through the pad unit PP, and receives a gate control signal according to the timing synchronization signal. It generates and controls the driving of the gate driving circuit 200, and at the same time, converts digital image data into an analog pixel data voltage and supplies it to a corresponding data line DL.

The antioxidant structure SPI is located inside the dam structure DM in the non-display area IA and has a closed curve shape that completely surrounds the display area AA. For example, it may be disposed between the gate driving circuit 200 and the common power wiring CPL, and may have a thin strip shape surrounding the display area AA. As another example, a rectangular thin width band shape surrounding the display area AA may be formed inside the gate driving circuit 200.

Hereinafter, preferred embodiments of the present application will be described in detail with reference to FIGS. 2 and 3. 2 is an enlarged plan view showing a structure of a border region in a narrow-bezel electroluminescent display device according to a preferred embodiment of the present application. FIG. 3 is a cross-sectional view of the flexible electroluminescent display device according to a preferred embodiment of the present application, taken along line I-I' of FIG. 2.

The flexible electroluminescent display device according to an exemplary embodiment of the present application may include a substrate SUB, a pixel array layer 120, a spacer SP, an antioxidant structure (SPI), and an encapsulation layer 130.

The substrate SUB is a base layer and includes a plastic material or a glass material. The substrate SUB according to an example may include an opaque or colored polyimide material. For example, the polyimide material substrate (SUB) may be a polyimide resin coated with a predetermined thickness on the front surface of a release layer provided on a relatively thick carrier substrate. In this case, the carrier glass substrate is separated from the substrate SUB by the release of the release layer using a laser release process. The substrate SUB according to this example further includes a back plate coupled to the rear surface of the substrate SUB based on the thickness direction Z. The back plate keeps the substrate SUB in a flat state. The back plate according to an example may include a plastic material, for example, polyethylene terephthalate. The back plate may be laminated on the rear surface of the substrate SUB separated from the carrier glass substrate.

The substrate SUB according to another example may be a flexible glass substrate. For example, the glass substrate SUB may be a thin glass substrate having a thickness of 100 micrometers or less, or a carrier glass substrate etched to have a thickness of 100 micrometers or less by a substrate etching process.

The substrate SUB may include a display area AA and a non-display area IA surrounding the display area AA. A buffer film (not shown) may be formed on the upper surface of the substrate SUB. The buffer film is formed on one surface of the substrate SUB to block moisture from penetrating the pixel array layer 120 through the substrate SUB, which is vulnerable to moisture permeation. The buffer film according to an example may be formed of a plurality of inorganic films alternately stacked. For example, the buffer film may be formed of a multilayer film in which one or more inorganic films of a silicon oxide film (SiOx), a silicon nitride film (SiNx), and a silicon oxynitride film (SiON) are alternately stacked. The buffer film can be omitted.

The pixel array layer 120 may include a thin film transistor layer, a planarization layer PLN, a bank BN, and a light emitting device ED.

The thin film transistor layers are provided in the plurality of pixels P defined in the display area AA of the substrate SUB and the gate driving circuit 200 defined in the fourth non-display area IA4 of the substrate SUB, respectively. .

The thin film transistor layer according to an example includes a thin film transistor T, a gate insulating film GI, and an interlayer insulating film ILD. Here, the thin film transistor T illustrated in FIG. 3 may be a driving thin film transistor electrically connected to the light emitting element ED.

The thin film transistor T includes a semiconductor layer A formed on a substrate SUB or a buffer film, a gate electrode G, a source electrode S, and a drain electrode D. In FIG. 3, the thin film transistor T shows an upper gate (top gate) structure in which the gate electrode G is positioned on the semiconductor layer A, but is not limited thereto. In another example, the thin film transistor T has a lower gate (bottom gate) structure in which the gate electrode G is positioned under the semiconductor layer A, or the gate electrode G has an upper portion of the semiconductor layer A. It may have a double gate structure located at the bottom.

The semiconductor layer A may be formed on a substrate SUB or a buffer film. The semiconductor layer (A) may include a silicon-based semiconductor material, an oxide-based semiconductor material, or an organic-based semiconductor material, and may have a single-layer structure or a multi-layer structure. A light blocking layer for blocking external light incident on the semiconductor layer A may be additionally formed between the buffer layer and the semiconductor layer A.

The gate insulating layer GI may be formed on the entire substrate SUB to cover the semiconductor layer A. The gate insulating film GI may be formed of an inorganic film, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or multiple films thereof.

The gate electrode G may be formed on the gate insulating layer GI so as to overlap the semiconductor layer A. The gate electrode G may be formed together with the scan wiring SL. Gate electrode (G) according to an example of the molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) of It may be formed of a single layer or multiple layers made of any one or alloys thereof.

The interlayer insulating layer ILD may be formed on the entire substrate SUB to cover the gate electrode G and the gate insulating layer GI. The interlayer insulating film ILD provides a flat surface on the gate electrode G and the gate insulating film GI.

The source electrode S and the drain electrode D may be formed on the interlayer insulating layer ILD to overlap the semiconductor layer A with the gate electrode G therebetween. The source electrode S and the drain electrode D may be formed together with the data line DL, the pixel driving power supply line PL, and the common power supply line CPL. That is, each of the source electrode S, the drain electrode D, the data wiring DL, the pixel driving power supply wiring PL, and the common power supply wiring CPL are simultaneously formed by a patterning process for the source drain electrode material.

Each of the source electrode S and the drain electrode D may be connected to the semiconductor layer A through an electrode contact hole penetrating the interlayer insulating film ILD and the gate insulating film GI. The source electrode S and the drain electrode D are molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) ) May be formed of a single layer or multiple layers of any one or alloys thereof. Here, the source electrode S of the thin film transistor T illustrated in FIG. 3 may be electrically connected to the pixel driving power supply line PL.

As described above, the thin film transistor T provided in the pixel P of the substrate SUB constitutes a pixel circuit PC. Also, the gate driving circuit 200 disposed in the fourth non-display area IA4 of the substrate SUB may include a thin film transistor that is the same as or similar to the thin film transistor T provided in the pixel P.

The planarization layer PLN is formed on the entire substrate SUB to cover the thin film transistor layer. The planarization layer (PLN) provides a flat surface on the thin film transistor layer. The planarization layer according to an example (PLN) is an acrylic resin (acryl resin), epoxy resin (epoxy resin), phenolic resin (phenolic resin), polyamide resin (polyamide resin), or an organic such as polyimide resin (polyimide resin) It can be formed into a film.

The planarization layer PLN according to another example may include a pixel contact hole PH for exposing the drain electrode D of the thin film transistor provided in the pixel P.

The bank BN is disposed on the planarization layer PLN to define an opening area (or light emitting area) in the pixel P of the display area AA. The bank BN may be represented by a pixel defining layer.

The light emitting element ED includes a pixel driving electrode AE, a light emitting layer EL, and a common electrode CE. The pixel driving electrode AE is formed on the planarization layer PLN and is electrically connected to the drain electrode D of the driving thin film transistor through the pixel contact hole PH provided in the planarization layer PLN. In this case, the remaining edge portions except for the middle portion of the pixel driving electrode AE overlapping the opening region of the pixel P may be covered by the bank BN. The bank BN may define an opening area of the pixel P by covering an edge portion of the pixel driving electrode AE.

The pixel driving electrode AE according to an example may include a metal material having high reflectance. For example, the pixel driving electrode AE is a stacked structure of aluminum (Al) and titanium (Ti) (Ti/Al/Ti), a stacked structure of aluminum (Al) and ITO (ITO/Al/ITO), APC ( Ag/Pd/Cu) alloys, and APC alloys and multilayered structures such as ITO (ITO/APC/ITO), or silver (Ag), aluminum (Al), molybdenum (Mo), gold (Au) , Magnesium (Mg), calcium (Ca), or barium (Ba) may include a single layer structure made of any one material or two or more alloy materials.

The emission layer EL is formed on the entire display area AA of the substrate SUB to cover the pixel driving electrode AE and the bank BN. The light emitting layer EL according to an example may include two or more light emitting units vertically stacked to emit white light. For example, the light emitting layer EL according to an example may include a first light emitting unit and a second light emitting unit for emitting white light by mixing the first light and the second light. Here, the first light emitting unit emits the first light and may include any one of a blue light emitting unit, a green light emitting unit, a red light emitting unit, a yellow light emitting unit, and a yellow green light emitting unit. The second light emitting unit may include a blue light emitting unit, a green light emitting unit, a red light emitting unit, a yellow light emitting unit, and a light emitting unit that emits a second light having a complementary color relation of the first light among yellow green.

The light emitting layer EL according to another example may include any one of a blue light emitting part, a green light emitting part, and a red light emitting part for emitting color light corresponding to a color set in the pixel P. For example, the light emitting layer EL according to another example may include any one of an organic light emitting layer, an inorganic light emitting layer, and a quantum dot light emitting layer, or may include a stacked or mixed structure of an organic light emitting layer (or inorganic light emitting layer) and a quantum dot light emitting layer.

Additionally, the light emitting device ED according to an example may further include a functional layer for improving light emission efficiency and/or lifetime of the light emitting layer EL.

The common electrode CE is formed to be electrically connected to the light emitting layer EL. The common electrode CE is formed in the entire display area AA of the substrate SUB so as to be commonly connected to the light emitting layer EL provided in each pixel P. The common electrode CE according to an example may include a transparent conductive material or semi-transmissive conductive material capable of transmitting light. When the common electrode CE is formed of a semi-transmissive conductive material, light emission efficiency of light emitted from the light emitting device ED may be improved through a micro cavity structure. The semi-permeable conductive material according to an example may include magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). Additionally, a capping layer may be further formed on the common electrode CE to adjust the refractive index of the light emitted from the light emitting element ED to improve the light output efficiency.

The spacer SP may be arranged to be scattered in an opening area in the display area AA, that is, an area in which the light emitting element ED is not disposed. The spacer SP may be for preventing the screen mask and the substrate from directly contacting each other in the process of depositing the light emitting layer EL. The spacer SP may have a column shape of the bank BN and may be disposed to be distributed only partially. Although the light emitting layer EL and the common electrode CE cannot ride on the spacer SP, the light emitting layer EL and the common electrode CE are not disconnected by the spacer SP and have a structure connected to the entire substrate SUB. Since the light emitting layer EL and the common electrode CE are not disconnected by the spacer SP, the spacer SP may have a forward tapered shape or a reverse tapered shape.

The antioxidant structure SPI is disposed on the non-display area IA and is disposed on the planarization film PLN surrounding the display area AA. The planarization layer PLN may extend from the display area AA to the non-display area IA. The anti-oxidation structure SPI has a band-shaped closed curve structure surrounding the display area AA. Accordingly, the bank BN may be patterned at the end of the display area AA to set an area limit line of elements disposed in the display area AA. An anti-oxidation structure (SPI) may be formed on the limit line to define the end of the display area (AA). In particular, the anti-oxidation structure SPI is set as a limiting line defining the maximum application area of the common electrode CE.

For example, as illustrated in FIG. 2, an end defining the application area of the light emitting layer EL may be set to be inside the end of the bank BN, that is, closer to the end of the display area AA. The end defining the application area of the common electrode CE may be set outside the end of the light emitting layer EL. The common electrode CE is connected to the common power supply line CPL, and is also advantageous because it is advantageous to set the display area AA to extend outward as much as possible.

However, the common electrode CE is very vulnerable to oxidation. When oxygen or moisture penetrated from the outside comes into contact with the common electrode CE, the common electrode CE is easily oxidized, and this oxidation phenomenon can rapidly propagate into the display area AA along the common electrode CE. have. As a result, the light emitting element ED may be damaged by having a fatal effect on the light emitting layer EL in surface contact with the common electrode CE. Therefore, the common electrode CE is preferably extended as far as possible from the display area AA, but a structure capable of accurately limiting the maximum application area to protect from external oxygen or moisture is needed. In the present application, the oxidation of the common electrode CE can be prevented by arranging the oxidation preventing structure SPI that can limit the maximum application area of the common electrode CE in the non-display area IA.

The anti-oxidation structure SPI sets the maximum application range of the common electrode CE, and is preferably disposed inside the dam structure DM. In addition, even if the common electrode CE is deposited over the antioxidant structure SPI, the outer and inner sides should be disconnected based on the antioxidant structure SPI. For this purpose, it is preferable that the anti-oxidation structure (SPI) has a reverse tapered shape. That is, the lower side of the anti-oxidation structure (SPI) in contact with the upper surface of the planarization film (PLN) is preferably a trapezoid narrower than the upper side of the upper surface.

Referring to FIG. 4 further, a structural feature in which the oxidation preventing structure SPI prevents oxidation of the common electrode CE will be described. 4 is an enlarged cross-sectional view showing an anti-oxidation structure provided in a narrow-bezel electroluminescent display device according to a preferred embodiment of the present application. FIG. 4 is an enlarged view of a portion “X” indicated by a dotted circle in FIG. 3.

Referring to FIG. 4, due to the reverse tapered structure of the anti-oxidation structure (SPI), when the conductive material layer for the common electrode CE is stacked, the planarization exposed between the anti-oxidation structure (SPI) and the bank (BN) A conductive material layer is deposited on the upper surface of the film PLN and the upper side of the anti-oxidation structure SPI. However, the conductive material layer is not laminated on the sidewall surface of the anti-oxidation structure (SPI), and is disconnected. That is, the conductive material layer is divided into the common electrode CE applied on the inner side by the antioxidant structure SPI and the dummy common electrode CED disposed on the outer side. That is, the effective area of the common electrode CE is limited to the inner region of the anti-oxidation structure SPI. Therefore, even if oxidation occurs on the dummy common electrode CED disposed outside the antioxidant structure SPI, the oxidation phenomenon does not propagate or diffuse beyond the antioxidant structure SPI to the common electrode CE applied to the inner region. Does not.

The encapsulation layer 130 is formed to surround both the top and side surfaces of the pixel array layer 120. The encapsulation layer 130 serves to prevent oxygen or moisture from penetrating the light emitting device ED.

The encapsulation layer 130 according to an example includes a first inorganic encapsulation layer (PAS1), an organic encapsulation layer (PCL) on the first inorganic encapsulation layer (PAS1), and a second inorganic encapsulation layer (PAS2) on the organic encapsulation layer (PCL). It may include. The first inorganic encapsulation layer PAS1 may be directly stacked on the common electrode CE. In this case, it is stacked on the antioxidant structure (SPI) as shown in FIG. The anti-oxidation structure (SPI) has a reverse tapered structure, but the dummy common electrode (CED) covers the upper surface of the planarization film (PLN) exposed between the bank (BN) and the anti-oxidation structure (SPI), and thus the bank ( The space between the BN) and the antioxidant structure (SPI) is somewhat filled. Therefore, the first inorganic encapsulation layer PAS1 may be stacked to cover the entire surface of the substrate SUB without breaking.

The first inorganic encapsulation layer (PAS1) and the second inorganic encapsulation layer (PAS2) serve to block the penetration of moisture or oxygen. The first inorganic encapsulation layer (PAS1) and the second inorganic encapsulation layer (PAS2) according to an example include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, or titanium oxide. It can be made of minerals. The first inorganic encapsulation layer PAS1 and the second inorganic encapsulation layer PAS2 may be formed by a chemical vapor deposition process or an atomic layer deposition process.

The organic encapsulation layer PCL is surrounded by the first inorganic encapsulation layer PAS1 and the second inorganic encapsulation layer PAS2. The organic encapsulation layer (PCL) is relatively thicker than the first inorganic encapsulation layer (PAS1) and/or the second inorganic encapsulation layer (PAS2) so as to adsorb and/or block particles that may occur during the manufacturing process. It can be formed of. The organic encapsulation layer (PCL) may be made of an organic material such as silicone oxycarbon (SiOCz) acrylic or epoxy-based resin. The organic encapsulation layer (PCL) may be formed by a coating process, for example, an inkjet coating process or a slit coating process.

The electroluminescent display device according to an exemplary embodiment of the present application may further include a dam structure DM. The dam structure DM is disposed in the non-display area IA of the substrate SUB to prevent overflow of the organic encapsulation layer PCL.

The dam structure DM may be disposed outside the display area AA, the gate driving circuit 200 disposed outside the display area AA, and the common power wiring CPL disposed outside the gate driving circuit 200. have. In some cases, the dam structure DM may be disposed to overlap the outer portion of the common power wiring CPL. In this case, the width of the non-display area IA on which the gate driving circuit 200 and the common power wiring CPL are disposed may be reduced to reduce the bezel width.

The dam structure DM according to a preferred embodiment of the present application may have a triple layer structure formed perpendicular to the substrate SUB. For example, a first layer formed of a planarization film PLN, a second layer formed of a bank BN, and a third layer formed of a spacer SP may be included.

The first layer may have a cross-sectional structure having a pattern trapezoidal shape of the planarization film PLN. The second layer may have a trapezoidal cross-sectional structure stacked on the first layer. The third layer may have a trapezoidal cross-sectional structure stacked on the second layer. When the thickness of the organic encapsulation layer (PCL) is thin and it is easy to control the spreadability of the organic encapsulation layer (PCL), it may be sufficient even if the height of the dam structure DM is not high. In this case, the third layer can be omitted.

The dam structure DM is all covered by the first inorganic encapsulation layer PAS1 and/or the second inorganic encapsulation layer PAS2. The organic encapsulation layer PCL may contact a portion of the inner wall surface of the dam structure DM. For example, the height from the edge region of the organic encapsulation layer PCL to the upper surface may be higher than the first layer height of the dam structure DM and lower than the second layer height. Alternatively, the height from the edge region of the organic encapsulation layer PCL to the upper surface may be higher than the height of the second layer of the dam structure DM and lower than the height of the third layer.

The height from the edge region of the organic encapsulation layer (PCL) to the upper surface is preferably applied lower than the overall height of the dam structure (DM). As a result, the first inorganic encapsulation layer PAS1 and the second inorganic encapsulation layer PAS2 have a surface-contacting structure on the upper surface and the outer sidewall of the dam structure DM.

As described above, the electroluminescent display device according to an exemplary embodiment of the present application may accurately set the maximum application area of the common electrode CE by the anti-oxidation structure SPI. Even if the application area of the common electrode CE is wider than the anti-oxidation structure SPI due to a process error, the common electrode CE applied outside the anti-oxidation structure SPI is internal to the dummy common electrode CED. It has a disconnected structure from the common electrode CE. Therefore, the width of the non-display area IA set outside the common electrode CE can be made as narrow as possible. That is, the narrow-bezel structure can be set more easily and accurately.

Hereinafter, a narrow-bezel electroluminescent display device according to another exemplary embodiment of the present application will be described with reference to FIG. 5. 5 is a cross-sectional view of the flexible electroluminescent display device according to another exemplary embodiment of the present application, taken along line I-I' of FIG. 2.

The electroluminescent display device according to another embodiment of the present application shown in FIG. 5 has almost the same components as the embodiment shown in FIG. 3. The difference is in the structure of the relationship between the antioxidant structure (SPI) and other components. Other configurations are the same as those described above, so duplicate description is omitted.

The electroluminescent display device according to another exemplary embodiment of the present application may further include a low-resistance wiring (ANL) disposed to surround the outer portion of the display area AA. For example, a low-resistance wiring (ANL) having a quadrangular band shape surrounding the display area AA may be formed. The anti-oxidation structure SPI may be formed on the low resistance wiring ANL.

The low resistance wiring ANL may be formed on the same layer with the same material as the pixel driving electrode AE. The low resistance wiring ANL is formed on the planarization film PNL, and may be covered by the bank BN. When the light emitting region is exposed on the pixel driving electrode AE by patterning the bank BN, the center portion of the low resistance wiring ANL can be simultaneously exposed. For example, the central region of the low-resistance wiring ANL having a quadrangular band shape surrounding the display area AA may be exposed as a quadrangular band shape.

An anti-tapered anti-oxidation structure (SPI) is formed on the exposed low-resistance wiring (ANL). In the space between the anti-oxidation structure SPI and the bank BN, the low-resistance wiring ANL is exposed. Thereafter, the common electrode CE is stacked. The common electrode CE may be deposited to cover the anti-oxidation structure SPI or to pass outside the anti-oxidation structure SPI to be connected to the low-resistance wiring ANL.

As a result, the common electrode CE directly contacts the low resistance wiring ANL in the space between the anti-oxidation structure SPI and the bank BN. On the other hand, the common electrode CE is not applied to the sidewall surface of the antioxidant structure SPI. That is, the common electrode CE is in physical and electrical contact with the low resistance wiring ANL, but has a structure that is physically and electrically disconnected from the dummy common electrode CED disposed outside the oxidation preventing structure SPI.

The low resistance wire ANL is connected to the common electrode CE and functions to lower the surface resistance of the common electrode CE. In addition, a function of connecting the common electrode CE and the common power wiring CPL is connected to the common power wiring CPL disposed on another layer outside the oxidation preventing structure SPI. As another example, a connection member formed of a different metal layer may be further disposed between the low-resistance wiring ANL and the power supply wiring CPL.

The structural features of the electroluminescent display device according to the present application are summarized as follows based on the above-described embodiments. First, as illustrated in FIG. 2, the end PT of the planarization film PLN is set between the display area AA and the dam structure DM. The pixel driving electrodes AE are disposed inside the display area AA in a matrix manner.

The light emitting layer EL is stacked on the planarization film PLN. In particular, the end ET of the light emitting layer EL is set between the end PT of the planarization film PLN and the display area AA. An antioxidant structure SPI is disposed near the end PT of the planarization film PLN. The end ET of the light emitting layer EL does not meet the end of the anti-oxidation structure SPI. That is, the light emitting layer EL is not stacked on the anti-oxidation structure SPI.

The anti-oxidation structure (SPI) functions as a boundary line for setting the coverage of the conductive layer stacked on the light-emitting layer EL. The conductive layer covers all the display area AA and extends to the outside, and is applied only to cover the antioxidant structure SPI. The conductive layer is separated into a common electrode CE as an inner region and a dummy common electrode CED as an outer region by the anti-oxidation structure SPI. The common electrode CE is physically and electrically connected in the inner region of the anti-oxidation structure SPI. On the other hand, the common electrode CE is physically and electrically separated or disconnected from the dummy common electrode CED.

Since the anti-oxidation structure (SPI) has a closed curve shape surrounding the display area (AA), oxidation of the conductive layer caused by oxygen or moisture infiltration in any direction of the non-display area (IA) is prevented from being prevented by the anti-oxidation structure (SPI). It cannot penetrate beyond the inner area. Therefore, the electroluminescent display device according to the present application can form the width of the outer region of the anti-oxidation structure (SPI) extremely narrow, so that the narrow-bezel design is easy. Even if the narrow-bezel is achieved, it is possible to block the penetration of oxygen or moisture, so that even when used for a long time, good image quality can be guaranteed.

Such an electric field display device according to an example of the present application includes an electronic notebook, an electronic book, a portable multimedia player (PMP), navigation, an Ultra Mobile PC (UMPC), a smart phone, a mobile communication terminal, a mobile phone, and a tablet. Portable electronic devices such as personal computers (PCs), smart watches, watch phones, or wearable devices, as well as televisions, laptops, monitors, refrigerators, microwave ovens, washing machines, cameras, etc. It can be applied to various products.

Features, structures, effects, etc. described in various embodiments of the present application described above are included in at least one example of the present application, and are not limited to only one example. Furthermore, features, structures, effects, and the like exemplified in at least one example of the present application may be implemented by combining or modifying other examples by a person having ordinary knowledge in the field to which this application belongs. Therefore, contents related to such combinations and modifications should be interpreted as being included in the scope of the present application.

The present application described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the technical field to which this application belongs that various substitutions, modifications, and changes are possible without departing from the technical details of the present application. It will be clear to those who have the knowledge of Therefore, the scope of the present application is indicated by the following claims, and all modifications or variations derived from the meaning and scope of the claims and their equivalent concepts should be interpreted to be included in the scope of the present application.

SUB: Substrate T: Thin film transistor
PLN: planarization layer BN: bank pattern
SP: Spacer DM: Dam structure
200: gate driving circuit 300: driving integrated circuit
120: pixel array layer 130: sealing layer
ED: Light emitting element AE: Pixel driving electrode
EL: emitting layer CE: common electrode
CPL: Common power wiring SPI: Anti-oxidation structure

Claims (10)

A substrate including a display area and a non-display area surrounding the display area;
A plurality of pixel driving electrodes disposed in the display area;
A dam structure disposed in the non-display area and surrounding the display area;
An anti-oxidation structure disposed between the dam structure and the display area to surround the display area; And
An electroluminescent display device comprising a conductive layer extending and applied to cover the antioxidant structure in the display area.
According to claim 1,
The conductive layer,
It includes a common electrode applied to the inner region of the antioxidant structure, and a dummy common electrode applied to the outer region of the antioxidant structure; And
The common electrode,
An electroluminescent display device in which the entirety is physically and electrically connected in an area inside the anti-oxidation structure, and is physically and electrically disconnected from the dummy common electrode.
According to claim 1,
An electroluminescent display device that is defined between the anti-oxidation structure and the display area and is applied to a region inside a boundary line surrounding the display area, and further includes a light emitting layer stacked between the pixel driving electrode and the common electrode.
According to claim 1,
A thin film transistor layer disposed on the display area and including a thin film transistor driving the pixel driving electrode;
A planarization film covering the thin film transistor layer;
And a bank covering an edge region of the pixel driving electrode disposed on the planarizing film, and exposing the center portion of the pixel driving electrode and the planarizing film in an area where the anti-oxidation structure is disposed.
The method of claim 4,
The antioxidant structure,
An electroluminescent display device formed in the bank and having a reverse tapered cross-sectional shape in an opening area exposing a portion of the upper surface of the planarization film.
The method of claim 5,
The conductive layer,
It is laminated on top of the planarization film exposed to the opening region and the antioxidant structure,
An electroluminescent display device that is not stacked on the sidewall surface of the antioxidant structure.
The method of claim 5,
Further comprising a low-resistance wiring layered under the anti-oxidation structure on the planarization film,
In the low-resistance wiring, an upper surface is exposed by the opening region
The conductive layer,
An electroluminescent display device in contact with the low-resistance wiring exposed in the opening area.
According to claim 1,
An electroluminescent display device further comprising an encapsulation layer that is stacked over the entire surface of the substrate on which the conductive layer is formed and extends to the outside of the dam structure.
The method of claim 8,
The encapsulation layer,
A first inorganic encapsulation layer covering the anti-oxidation structure and stacked on the entire surface of the substrate without disconnection;
On the first inorganic encapsulation layer, an organic encapsulation layer applied only to the inside of the dam structure;
An electroluminescent display device comprising a second inorganic encapsulation layer stacked on an upper surface of the organic encapsulation layer.
According to claim 1,
The antioxidant structure,
An electroluminescent display device having a closed curve shape surrounding the display area.

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