KR20200074530A - Apparatus for processing substrate - Google Patents

Abstract

A substrate processing apparatus is disclosed. According to the present invention, the substrate processing apparatus enables the manufacture of a device corresponding to a large-area large substrate, and may manufacture a reactor in various forms, thereby expanding the range of application and improving the thermal uniformity of a chamber. According to the present invention, the substrate processing apparatus comprises: a reactor which provides a chamber space in which a substrate is processed; a waiting unit located below the reactor and providing a space for loading/unloading the substrate; a substrate loading unit on which at least one substrate is loaded; and an elevating unit which moves the substrate loading unit in the vertical direction.

Description

Substrate processing equipment {APPARATUS FOR PROCESSING SUBSTRATE}

The present invention relates to a substrate processing apparatus. More specifically, the present invention relates to a substrate processing apparatus capable of manufacturing a device corresponding to a large-area large-sized substrate, capable of being manufactured in various forms, to expand the application range, and to improve the thermal uniformity of the chamber.

The substrate processing apparatus is used in manufacturing flat panel displays, semiconductors, and solar cells, and is roughly classified into a vapor deposition apparatus and an annealing apparatus. Among them, an annealing device is a device that improves the properties of the deposited film after depositing the film on the substrate, and is a heat treatment device that crystallizes or changes the deposited film.

Conventional heat treatment devices have a substantially vertical or hexahedral shape and are made of quartz material. However, considering the situation in which the substrate is recently enlarged, it is not efficient in terms of difficulty and cost to enlarge the heat treatment device made of quartz. On the other hand, although a large heat treatment device may be constructed of a metal material, it is not good in terms of durability, and there is a problem in that manufacturing cost and time are increased since a welding process must be performed to connect each component.

In addition, as the heat treatment apparatus is enlarged and manufactured in various forms, the sealing problem with the external environment is also a consideration.

The present invention has been made to solve the problems of the prior art as described above, and an object of the present invention is to provide a substrate processing apparatus capable of processing a large area large substrate.

In addition, an object of the present invention is to provide a substrate processing apparatus that facilitates the production of a large-sized reactor and can be manufactured in various forms to expand an application range.

In addition, an object of the present invention is to provide a substrate processing apparatus capable of improving the thermal efficiency and thermal uniformity of the substrate processing space.

The above object of the present invention is a substrate processing apparatus in which at least one substrate is processed, a reactor providing a chamber space in which the substrate is processed; An atmosphere portion located at the bottom of the reactor and providing a space for loading/unloading the substrate; A substrate loading unit on which at least one substrate is loaded; It includes a lifting portion for moving the substrate loading portion in the vertical direction, the substrate loading portion, the base; A substrate support formed in a vertical direction on the base; And it is achieved by a substrate processing apparatus, including a heater portion that generates heat at a portion spaced apart from the upper surface of the base.

When the substrate loading part is elevated, the upper rim of the base is detachably coupled to the bottom surface of the manifold disposed at the bottom of the reactor, and the substrate can be loaded into the reactor when the base is coupled to the bottom surface of the manifold.

The heater portion includes a plurality of heaters, and the heater includes: a first non-heating portion extending from a first position of the base; And a heating unit having one end electrically connected to the first non-heating unit so as to be spaced apart from the base by a first separation distance.

The heater may further include a second non-heating portion extending from the second position of the base and connected to the other end of the heating portion.

The first non-heating portion and the second non-heating portion may be formed in a vertical direction with respect to the base, and the heating portion may be formed in a direction parallel to the substrate or the base.

The heater unit may include at least one first heater that is formed to have a first length at least in the front-rear direction of the base; At least one second heater formed at least in a second length in the left-right direction of the base; At least one third heater formed at least in a third length in the diagonal direction of the base; A fourth heater formed in a first length and a fourth length shorter than the second length in the front-rear direction or the left-right direction of the base; And a combination of any one or more heaters.

A layer heat insulating part may be arranged on a base in a plurality of layers, and a wall heat insulating part surrounding the plurality of layer heat insulating parts may be arranged.

A heater hole through which the heater portion passes may be formed in the layer insulation portion.

On the side of the chamber in the reactor, a plurality of gas supply parts extending in a vertical direction may be arranged at predetermined intervals.

The lower surface in the form of surrounding the reactor further includes an open housing, and a lower portion of the housing may be connected to an upper portion of the manifold.

The housing can include a housing heater.

A fluid circulation part that supplies/discharges fluid to the space between the inner surface of the housing and the outer surface of the reactor may be further included.

The fluid circulation part may supply fluid through a fluid supply part formed in an upper region of the housing, and may discharge fluid through at least one fluid discharge part formed at a lower height than the fluid supply part.

The fluid discharge portion may be formed at a predetermined distance along the vertical direction of the housing.

The reactor may have a shape in which the lower portion is opened, and the reactor side and upper portions include at least one insulating plate.

The reactor may have a polygonal column shape with an open bottom.

The standby portion may be an open shape with an entrance formed on at least one side.

The chamber space of the reactor may be sealed when the upper edge of the base is coupled to the lower portion of the reactor while the substrate loading part is elevated.

According to the present invention configured as described above, there is an effect capable of processing a large area large substrate.

In addition, the present invention has the effect of facilitating the manufacture of a large-scale reactor and expanding the application range by manufacturing in various forms.

In addition, the present invention has an effect capable of improving the thermal efficiency and thermal uniformity of the substrate processing space.

1 is a schematic perspective view showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a schematic front sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
3 is a schematic front sectional view showing the operation of the substrate processing apparatus according to an embodiment of the present invention.
4 is a schematic diagram showing a reactor of a substrate processing apparatus according to an embodiment of the present invention.
5 is a schematic diagram showing a reactor of a substrate processing apparatus according to another embodiment of the present invention.
6 is a schematic perspective view showing a substrate loading unit according to an embodiment of the present invention.
7 is a schematic plan view showing a substrate loading unit according to an embodiment of the present invention.
8 is a schematic side cross-sectional view showing a substrate stack according to an embodiment of the present invention.
9 is a schematic diagram showing a fluid circulation state according to an embodiment of the present invention.

For a detailed description of the present invention, which will be described later, reference is made to the accompanying drawings that illustrate, by way of example, specific embodiments in which the present invention may be practiced. These examples are described in detail enough to enable those skilled in the art to practice the present invention. It should be understood that the various embodiments of the invention are different, but need not be mutually exclusive. For example, the specific shapes, structures, and properties described herein can be implemented in other embodiments without departing from the spirit and scope of the invention in relation to one embodiment. In addition, it should be understood that the location or placement of individual components within each disclosed embodiment can be changed without departing from the spirit and scope of the invention. Therefore, the following detailed description is not intended to be taken in a limiting sense, and the scope of the present invention, if appropriately described, is limited only by the appended claims, along with all ranges equivalent to those claimed. In the drawings, similar reference numerals refer to the same or similar functions across various aspects, and length, area, thickness, and the like may be exaggerated for convenience.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to enable those skilled in the art to easily implement the present invention.

In the present specification, the substrate may be understood as meaning including a substrate, a semiconductor substrate, a solar cell substrate, and the like used for display devices such as LEDs and LCDs. In addition, in the present specification, the substrate processing process may be understood as meaning including a deposition process, a heat treatment process, and the like. However, hereinafter, it is assumed and described as a heat treatment process.

Substrate processing device

1 is a schematic perspective view showing a substrate processing apparatus 10 according to an embodiment of the present invention. 2 is a schematic front sectional view showing a substrate processing apparatus 10 according to an embodiment of the present invention. 3 is a schematic front sectional view showing the operation of the substrate processing apparatus 10 according to an embodiment of the present invention.

1 and 2, the substrate processing apparatus 10 may include a reactor (reactor; 100), a standby unit 200, a substrate loading unit 300, and a lifting unit 400 as a heat treatment device. In addition, the housing 500 surrounding the reactor 100 may be further included.

The reactor 100 may provide a chamber space PR in which at least one substrate is substantially heat treated. In the reactor 100, the lower portion is opened 130, and the substrates 50 loaded on the substrate loading part 300 through the opened lower portion 130 are raised to be positioned in the chamber space PR. Examples of the reactor 100 are shown in FIGS. 4 and 5 to be described later. However, it is noted that the reactor 100 is not limited to this type.

The atmospheric part 200 may be located under the reactor 100. The standby unit 200 may provide a waiting space SR before the substrate 50 is processed or after the substrate 50 is processed. That is, the standby unit 200 may provide a space SR in which the substrate 50 is loaded/unloaded to the substrate loading unit 300. As a passage through which the substrate 50 is loaded/unloaded to the standby unit 200, an entrance 210 may be formed on one surface of the standby unit 200.

The standby part 200 may be formed of a plate and a frame except for the doorway 210. However, the present invention is not limited thereto, and some of the side surfaces may be more open. The atmospheric part 200 may support the reactor 100, the substrate loading part 300, and the lifting part 400. The reactor 100 is supported in a form disposed on the upper part of the atmospheric part 200, the lifting part 400 is supported in a form arranged inside the reactor 100, and the substrate loading part 300 is a lifting part ( 400) may be indirectly supported to the reactor 100 in a form connected to the reactor.

The interior of the atmospheric part 200 may be in an open form without being closed. To be described later, since the chamber space PR of the reactor 100 can be sealed by raising and lowering the base 310 of the substrate loading unit 300, the need to seal the atmospheric unit 200 may be eliminated. Accordingly, since the opening and closing door does not need to be separately installed in the doorway 210, it is possible to simplify the device and reduce the cost. In addition, since the atmospheric portion 200 is opened, there is an advantage that can improve the cooling rate in the process of cooling the reactor 100. In addition, since the substrates 50 are directly loaded onto the substrate loading part 300 through the doorway 210 and unloaded from the substrate loading part 300, the process time can be reduced.

The manifold 250 may mediate the connection of the two configurations between the reactor 100 and the atmosphere 200. The manifold 250 performs sealing between the reactor 100 and the atmospheric part 200, and at the same time, may provide an inflow path, an outflow path, and the like for introducing and discharging substrate processing gas into the reactor 100.

The substrate processing gas may be introduced into the reactor 100 from the external substrate processing gas supply means (not shown) through the inflow path of the manifold 250. A plurality of gas supply units 260 extending in a vertical direction may be connected to the inner surface of the manifold 250. Accordingly, a plurality of gas supply units 260 may be disposed on a side of the chamber PR in the reactor 100 at predetermined intervals. For example, considering that the reactor 100 is a hexahedron, a plurality of gas supply units 260 may be disposed at a predetermined interval on four sides of the chamber PR of the reactor 100.

A plurality of discharge holes (not shown) may be formed in each gas supply unit 260. When the substrate loading part 300 in which the plurality of substrates 50 are loaded is accommodated in the reactor 100, the discharge hole is between the adjacent substrate 50 and the substrate 50 supported by the substrate loading part 300. It is preferably formed to be located at each of the interval. Thus, the flow of the substrate processing gas between the substrate 50 and the substrate 50 becomes smooth, and temperature uniformity can be improved.

By supplying the substrate processing gas, the air pressure in the chamber space of the reactor 100 in a closed state may be set higher than the outer space of the reactor 100. Since the chamber space of the reactor 100 becomes positive pressure, contaminants, particles, etc. from outside the reactor 100 can be prevented from entering the chamber space.

The substrate processing gas introduced into the reactor 100 may be discharged through a discharge path (not shown) formed in the manifold 250, and an external substrate processing gas discharge means (not shown), such as a pump, may be provided in the discharge path. It can be connected to apply exhaust pressure.

Meanwhile, a gas supply unit and a gas discharge unit (not shown) may be formed to communicate with the reactor 100.

At least one substrate 50 may be loaded on the substrate loading unit 300. The substrate loading unit 300 may be moved up and down by the lifting unit 400 while being disposed in the interior space SR of the waiting unit 200. The substrate loading part 300 may include a base 310, a substrate support part 330, a heater part 350, an insulating part 370, and the like. The configurations of the substrate loading unit 300 will be described later in FIG. 6 or less.

The lifting part 400 may move the substrate loading part 300 in the vertical direction. The lifting unit 400 may use a known lifting means without limitation, and in particular, a screw jack type lifting means may be used to stably lift the large area and large-capacity substrate loading unit 300. have. The lifting means is connected to the base 310 of the substrate loading part 300 to apply a force moving in the vertical direction.

As shown in FIG. 3, when the substrate loading part 300 (or the base 310) is moved to the uppermost level by the lifting part 400, the substrates 50 loaded on the substrate loading part 300 are reactors. It may be located in the chamber space (PR) of (100). As the substrate loading part 300 rises, the upper rim of the base 310 can be detachably coupled to the lower surface of the manifold 250 disposed under the reactor 100, and the base 310 is manifolded. When coupled to the bottom surface of the fold 250, the substrate 50 may be loaded into the reactor 100. Between the manifold 250 and the base 310, a sealing means S such as an O-ring is interposed to perform close contact, so that the chamber space PR of the reactor 100 can be sealed. have.

In addition, when the substrate processing process is completed, the substrate loading unit 300 may be moved to the lowermost portion by the lifting unit 400 to be located in the waiting space of the waiting unit 200. Loading/unloading of the substrate 50 may be performed in the standby unit 200.

The housing 500 has a large volume to surround the reactor 100, and an empty space is formed inside, so that the lower surface can be opened. The housing 500 may form a closed space as it is connected to the top of the manifold 250. The housing 500 may serve as an insulator to create a thermal environment for the reactor 100, and the outermost surface may be closed with SUS, aluminum, or the like, and a bent portion (work) may be provided on the inner or inner surface of the housing 500. For example, a housing heater (not shown) formed by continuously connecting “∪” or “∩” shapes may be installed. The space GR between the housing 500 and the reactor 100 may be used as a passage through which fluid to be described later in FIG. 9 circulates.

Reactor

4 is a schematic diagram showing a reactor 100: 100-1 of the substrate processing apparatus 10 according to an embodiment of the present invention.

Referring to Figure 4, the reactor (100: 100-1) is the lower portion of the open form, the reactor side 110 and the reactor top 150 constitutes a surface and may be a closed shape. The reactor side 110 may have a polygonal column shape, but in this specification, a square column shape is assumed and described. In addition, the reactor top 150 may be a flat shape, a dome shape, or a shape including a predetermined curvature in a vertical direction (a shape in which a part is bent on a flat plate), and the like, and the description will be made assuming a flat shape. It is noted that the shapes of the reactor side 110 and the top 150 are not necessarily limited to the exemplary form of the drawings.

The reactor side 110 and the reactor top 150 may include a plurality of frames 120, 130, 160, and 170. In addition, the reactor side 110 and the reactor top 150 may include at least one insulating plate 101. Thus, the surface of the reactor side 110 and the surface of the reactor top 150 may be configured by combining the plurality of frames 120, 130, 160, 170 and the insulating plate 101.

The insulating plate 101 serves to insulate the inside of the reactor 100 from an external environment, and each insulating plate 101 is preferably a flat plate shape, but may be a dome shape or a three-dimensional shape having a predetermined curvature. The insulating plate 101 may include quartz, ceramic, glass, etc., which are materials having excellent heat resistance and rigidity at high temperatures.

The reactor side 110 may include a plurality of vertical frames (120: 121, 122, 123, ...) and a plurality of horizontal frames (130: 131, 132, ...).

The vertical frame 120 may be formed to extend in the vertical direction to correspond to the height of the reactor 100. The vertical frame 120 may include only the vertical frames 121 and 122 disposed at the corners of the reactor side 110, and may further include a vertical frame 123 disposed on the surface of the reactor side 110. have. 4 and 5, since the reactor side 110 has a quadrangular column shape, it includes four vertical frames 121 and 122 at corners, and additionally, a total of four vertical frames 123, one on each side. Includes. The number of vertical frames 120 may be changed according to the shape of the reactor side 110, the size of the reactor side 110 surface, and the like.

The horizontal frame 130 may be formed to extend in a horizontal direction to connect a pair of neighboring vertical frames 120. 4 and 5, the horizontal frame 131 is disposed between a pair of neighboring vertical frames 121 and 123, and the horizontal frame 132 is placed between a pair of neighboring vertical frames 122 and 123. Can be deployed. Both ends of the horizontal frame 130 may be connected to a pair of neighboring vertical frames 120 by fastening, bonding, or the like.

The vertical frame 120 and the horizontal frame 130 are connected, and an insulating plate 101 may be disposed in the remaining empty space. In other words, the insulating plate 101 is disposed in an area (empty area) defined by the vertical frame 120 and the horizontal frame 130 to form a closed surface. In another aspect, the left and right sides of one insulating plate 101 may be in contact with two vertical frames 120, and the upper and lower sides may be in contact with two horizontal frames 130. In FIG. 4, each side constituting the reactor side 110 includes three vertical frames 120 and ten horizontal frames 130, and these divide eight spaces, and eight insulating plates 101 are arranged. The illustrated form is shown.

On one surface constituting the reactor side 110, a plurality of vertical frames (120: 121, 122, 123) is preferably arranged at regular intervals along the horizontal direction. In addition, a plurality of horizontal frames (130: 131, 132) connecting a pair of neighboring vertical frames 120 is preferably arranged at regular intervals along the vertical direction. Thus, it is possible to configure the reactor side 110 as the same type of insulating plate 101, there is an advantage that the assembly of the reactor 100 is simplified.

The reactor top 150 may include a single insulating plate 101 or a plurality of insulating plates 101. The frame constituting the rim of the reactor top 150 may correspond to the horizontal frames 130 located at the top of the reactor side 110. The size and shape of the insulation plate 101 disposed on the reactor side 110 and the reactor top 150 may be the same, but may be formed differently.

When the reactor top 150 includes only one insulating plate 101, horizontal frames 130 positioned at the top of the reactor side 110 may support the edges of the insulating plate 101.

When the reactor top 150 includes a plurality of insulating plates 101, the reactor upper 150 is at least one upper frame (160, 170) so that a plurality of insulating plates 101 can be divided into regions. It may include.

The upper frames 160 and 170 may be connected to both ends of the horizontal frame 130 and/or the vertical frame 120 disposed at the top of the reactor side 110. The upper frame 160, both ends may be connected to the top of the vertical frame 120. In addition, the upper frame 170, both ends may be connected on the upper side of the horizontal frame 130 is disposed on the top of the reactor side (110).

The upper frames 160 and 170 include at least one first upper frame 160 disposed in a first direction and at least one second upper frame 170 (171, 172) disposed in a second direction perpendicular to the first direction. ). The first upper frame 160 may be connected to the top of the vertical frame 120, and the second upper frame 170 may be connected to the top of the horizontal frame 130.

More specifically, in the example of FIGS. 4 and 5, both ends of the first upper frame 160 are connected on the uppermost end of the vertical frame 123, and one end of the second upper frames 170: 171 and 172 is It is connected to the first upper frame 160, the other end may be connected to the horizontal frame 130. The lower ends of both ends of the upper frames 160 and 170 may be connected to the upper sides of the vertical frame 120 and the horizontal frame 130. In other words, the upper frames 160 and 170 may span the vertical frame 120 and the horizontal frame 130 or be firmly coupled. In FIG. 4, the surfaces constituting the reactor top 150 include one first upper frame 160 and four second upper frames 170, which divide six spaces to form six insulating plates 101 ) Is shown.

An insertion groove (not shown) may be formed in at least one of the vertical frame 120 and the horizontal frame 130. An edge of the insulating plate 101 may be inserted into the insertion groove. After manufacturing the reactor side 110 by repeating the process of inserting the insulating plate 101 into the insertion groove, the upper frames 160 and 170 are vertically framed 120 and horizontally frame 130 at the top of the reactor side 110. Phases. And, by arranging the insulating plate 101 in the region defined by the upper frame (160, 170) can complete the production of the reactor top 150.

When arranging the insulating plate 101 in an area defined by the upper frames 160 and 170, a receiving groove (not shown) may be formed in the upper frames 160 and 170 so that the positions of the insulating plates 101 do not deviate. . The receiving groove is formed to be stepped, and part or all of the rim of the insulating plate 101 can be accommodated. There is an advantage in that it is possible to configure the surface of the reactor top 150 by inserting the insulating plate 101 in the receiving groove in the reactor top 150. In addition, since the insulating plate 101 is accommodated in the receiving groove in the upper reactor 150, the entry path from the upper reactor 150 to the space inside the chamber is secured by lifting the insulating plate 101, thereby processing the substrate 10 Alternatively, there is an advantage in that maintenance of the reactor 100 is simplified.

On the other hand, the upper frame (160, 170) also forms the insertion groove as in the vertical frame 120 and the horizontal frame 130, and the reactor top 150 is configured by inserting the rim of the insulating plate 101 into the insertion groove. You may.

In addition, elastic means (not shown) may be further disposed in the insertion groove. As the elastic means, a known elastic means such as a spring can be used without limitation. The elastic means can be fixed by pushing the insulating plate 101 to one side of the insertion groove. Since the elastic means pushes and fixes the insulating plate 101 to one side of the insertion groove, it can contribute to sealing the gap between the insulating plate 101 and the insertion groove completely. In addition, since the elastic means provides a predetermined elastic force, there is an advantage in that stress can be prevented from being concentrated on the heat insulating plate 101 even in the slight shaking of the reactor 100. And, even when disassembling the reactor 100, there is an advantage that it is very easy to remove the insulating plate 101 from the frames by simply removing the elastic means.

5 is a schematic diagram showing a reactor (100: 100-2) of the substrate processing apparatus 10 according to another embodiment of the present invention. Only the difference from FIG. 4 will be described.

Referring to Figure 5, the reactor (100: 100-2) is a lower portion of the open form, the reactor side 110 and the reactor top 150 constitutes a surface and may be a closed shape. After the vertical frame 120 and the horizontal frame 130 are connected, the surface of the reactor side 110 may be configured as the insulating plate 101 is disposed in the remaining empty space of the reactor side 110. In FIG. 5, each surface constituting the reactor side 110 includes three vertical frames 120 and eight horizontal frames 130, which divide six spaces, and six in each divided space. The form in which the heat insulating plate 101 is disposed in close contact is illustrated.

The reactor (100: 100-2) according to the second embodiment is characterized in that the heat insulating plate 101 is in close contact with the outside of the vertical frame 120 and the horizontal frame 130. The insulating plate 101 may not be sandwiched between the vertical frame 120 and the area (empty area) defined by the horizontal frame 130, and may be in close contact with the outside of the vertical frame 120 and the horizontal frame 130.

The reactor (100: 100-2) of the second embodiment is connected to the vertical frame 120 and the horizontal frame 130 by a known method, or while performing the connection, the insulating plate 101 in the outer direction from the vertical frame ( 120) and the horizontal frame 130 can be installed in close contact. Therefore, it is possible to configure the reactor 100 in a simple process, and there is no need to disassemble the frames 120, 130, 160, and 170 in the process of maintaining the reactor 100, and only the respective insulating plates 101 are outside. It has the advantage of being easy to remove or replace.

The bracket 140 may be connected to the outside of the horizontal frame 130. One or a plurality of brackets 140 may be connected to the outside of the horizontal frame 130 by fastening, bonding, or the like.

The bracket 140 may provide a seating groove (not shown). The bracket 140 is formed such that the side cross-sectional shape is bent in a shape of approximately'└' or'├', and the empty space may act as a seating groove. A part of the rim of the insulating plate 101 may be seated in the space of the seating groove.

The bracket 145 may be further connected to the outside of the vertical frame 120. One or a plurality of brackets 145 may be connected to the outside of the vertical frame 120 by fastening, bonding, or the like.

Like the bracket 140, the bracket 145 may provide a seating groove (not shown). The bracket 145 is formed such that the side cross-sectional shape is bent in an approximately'└' shape, and an empty space may act as a seating groove.

In the state in which the frames 120 and 130 are configured, as the brackets 140 and 145 are connected, the insulating plate 101 is secured to the seating grooves of the brackets 140 and 145, and thus the edges of the insulating plate 101 are framed ( 120, 130). Or, in a state in which the frames 120 and 130 are configured, after connecting the brackets 140 and 145 to the outside of the frames 120 and 130, the insulating plate 101 is seated in the seating grooves of the brackets 140 and 145. Depending on the seam, the edges of the heat insulating plate 101 may be adhered to the frames 120 and 130. Accordingly, there is an advantage that the manufacturing process is simplified. In addition, since the insulation plate 101 can be taken out even if only the brackets 140 and 145 are separated, there is an advantage that the maintenance process of the reactor 100 is simplified.

In addition, elastic means (not shown) may be further disposed in the seating groove (not shown). The elastic means may be fixed by pushing the insulating plate 101 in the direction of the outer surface of the seating groove, that is, the vertical frame 120 and the horizontal frame 130.

As above, the reactor 100 of the present invention 100: 100-1, 100-2 may form a reactor 100 by combining a plurality of vertical frames 120 and horizontal frames 130. Can, and there is no limit in terms of size. Thus, there is an advantage that can easily manufacture the reactor 100 that can process a large area large substrate. Therefore, the selection of materials that can be used for the reactor 100 is diversified, and there is an effect of improving production efficiency.

Substrate loading part and heater part

6 is a schematic perspective view showing a substrate loading unit 300 according to an embodiment of the present invention. 7 is a schematic plan view showing a substrate loading unit 300 according to an embodiment of the present invention. 8 is a schematic side cross-sectional view showing a substrate loading unit 300 according to an embodiment of the present invention.

At least one substrate 50 may be loaded on the substrate loading unit 300. The substrate loading part 300 may include a base 310, a substrate support part 330, a heater part 350, an insulating part 370, and the like.

The base 310 may be in the form of a plate in which the components of the substrate loading part 300 are supported. It is preferable that the area of the base 310 is larger than the area of the open lower portion 130 of the reactor 100 so that the substrate loading part 300 rises and be coupled to the manifold 250. Sealing means (S) may be installed at the edge portion of the base 310 in contact with the manifold 250. As the base 310 is connected to the lift 400 and moves in the vertical direction, the entire substrate stack 300 can move in the vertical direction.

The substrate support 330 may be formed on the base 310 in the vertical direction. A plurality of substrate supports 330 may be installed along the periphery of the base 310 at a mutual distance. A support groove (not shown) may be formed in the substrate support part 330 so that the substrate 50 is inserted and supported, or a support rod (not shown) may be formed to support the lower portion of the substrate 50. Alternatively, the substrate 50 is supported and seated on a substrate support means (not shown), such as a substrate holder, a boat, or a ladder, and the substrate support 330 supports the substrate support means (not shown). It may take the form. The number, shape, etc. of the substrate support 330 installed may be adjusted in consideration of the size and shape of the substrate 50.

The heater unit 350 may compensate for the loss of heat to the lower portion of the reactor 100. When the substrate loading unit 300 moves to the uppermost part of the heater unit 350, the substrates 50 are aligned inside the reactor 100 and the inside of the reactor 100 is closed, that is, the substrate processing process in the reactor 100 When this is performed, it is possible to compensate for the loss of heat to the bottom of the reactor 100. Since the housing 500 is enclosed in the portion except the lower portion of the reactor 100, heat is not easily lost, while the lower portion of the reactor 100 has a high possibility of dissipating heat, and in the vertical direction within the reactor 100 Thermal deviation may occur. Therefore, heat is generated in the substrate loading part 300 that seals the lower portion of the reactor 100 to reduce the thermal deviation.

The heater according to the prior art is inserted into the shape of a hot wire in the inside of the base, and when the base contact heater is heated, heat is transferred not only to the substrate direction of the upper surface but also to the surface direction of the base having a large heat capacity. Since the temperature rise rate is lowered, there is a problem that energy is greatly wasted. In addition, since the base heat-conducted from the heater is difficult to cool easily, the cooling rate is lowered, and the temperature of the base cannot be easily controlled artificially. Problems that cannot uniformly control the lower temperature occur.

Therefore, the heater unit 350 of the present invention may be installed to allow heat generation at a part spaced apart from the upper surface of the base 310. Thus, it is possible to improve heat efficiency by minimizing heat transfer in the direction of the base 310. The heater unit 350 may include a plurality of heaters 351, 352, 353, 354, ....

Each heater 351, 352, 353, 354, ... may include a non-heating portion and a heating portion.

For example, the heater 353 is electrically connected to the first non-heating portion so that the first non-heating portion extending from the first position of the base 310 and the base 310 and the first separation distance D1 are spaced apart from each other. It may include a heating unit connected.

As another example, the heaters 351, 352, and 354 have a first non-heating portion that is spaced apart by a first non-heating portion extending from a first position of the base 310 and a first separation distance D1 from the base 310. And a second non-heating portion extending from the second position of the base 310 and connected to the other end of the heating portion.

Here, the first separation distance (D1) should be sufficiently secured to prevent the heat energy generated in the heating unit from being transferred to the base 310 through heat transfer. That is, when the first separation distance D1 is too short, heat energy generated in the heating unit may be easily transferred to the base 310 by a method such as heat radiation or tropical flow. Conversely, if the first separation distance D1 is too long, space for accommodating the substrate 50 is reduced, and productivity may be reduced. In consideration of this, the first separation distance D1 is preferably 1 mm or more and less than 10 cm, but the first separation distance D1 is not necessarily limited thereto, and considers the specifications of the substrate 50 or the substrate processing environment. Thus, all separation distances of a value capable of minimizing heat radiation, heat flow, or heat conduction from the heating unit to the base 310 may be applied.

For example, the non-heating portion may be formed in a rod shape long in a vertical direction based on the base 310, and the heating portion may be formed in a rod shape long in a direction parallel to the substrate 50 or the base 310. Accordingly, the heaters 351, 352, 353, 354, ... may be formed in the form of “ㄱ”, “┌┐”, or “T” as a whole. However, the present invention is not necessarily limited thereto, and the non-heating portion is formed in a vertical direction as a whole, and the heating portion is formed in a horizontal direction as a whole, in a circular arc shape, a curved shape, a coil shape, or a combination of them. All shapes and the like can be applied.

In addition, for example, the non-heating portion may be made of the same material, and the heating portion may be made of a different kind of metal material. More specifically, for example, the non-heating portion may be a conductive material such as nickel (Ni), tungsten (W), molybdenum (Mo), considering relatively low heat generation and electrical resistance, and cushioning properties due to expansion of the heat generating portion. , The heating parts 351b and 353b may be a heat-generating material such as canthal, super kanthal, and nichrome having relatively high heat generation and electrical resistance and durability against high temperatures. .

Therefore, the heating unit is spaced apart from the base 310 to minimize the heat transfer in the direction of the base 310 to induce heat transfer only in the direction of the substrate 50, thereby improving the thermal efficiency of the equipment and each The heaters 351, 352, 353, 354, ... are arranged in a multi-zone shape to have various positions and various sizes/thicknesses, and uniform local area control allows the entire area of the substrate 50 to be uniform. You can apply one row. In addition, by minimizing the heat capacity of the heater unit 350 to be heated, the temperature increase rate and the cooling rate are improved to shorten the process time, thereby increasing the production amount.

Meanwhile, as illustrated in FIG. 7, the heater unit 350 includes at least one first heater 351 formed at least as a first length L1 in the front-rear direction of the base 310 as a whole, and a base ( At least one second heater 352 formed to be long in the second length L2 in the left and right directions of 310, and at least one third formed to be extended in the third length L3 in the diagonal direction of the base 310 as a whole. It can be made by selecting any one or more of the heater 353, the fourth heater 354 which is shortly formed in the fourth length L4 in the front-rear direction or the left-right direction of the base 310, and combinations thereof.

Therefore, the heater unit 350 controls the temperature of each heater 351, 352, 353, 354, ..., so that the length direction, width direction, edge portion and center portion of the substrate 50, diagonal direction, etc. It can improve the thermal uniformity of.

Referring again to FIGS. 6 and 8, the heat insulation 370 may include a wall heat insulation 371 and a layer heat insulation 375. The insulating portion 370 may adopt a known insulating plate material.

First, a plurality of layer heat insulating parts 375 on the base 310 may be arranged in a horizontal direction to form mutual gaps. In order to avoid interference with the heater unit 350, the layer insulation unit 375 may be formed with heater holes 379 through which the heater unit 350, particularly a non-heating unit, may pass. Then, the surroundings of the plurality of layer heat insulating parts 375 may be arranged to surround the wall heat insulating parts 371.

Since the layer heat insulating parts 375 are arranged in a plurality of layers, heat insulating layers may be formed for each space between the layer heat insulating parts 375. In addition, since the wall heat insulating part 371 surrounds the layer heat insulating part 375, it is possible to prevent the air flow between the layer heat insulating parts 375 from escaping. Accordingly, it is possible to further prevent heat from escaping from the chamber region PR to the lower portion of the reactor 100, and minimize heat capacity by better preserving heat generated by the heater unit 350 and uniform temperature. You can improve your sex.

Fluid circulation system

9 is a schematic diagram showing a fluid circulation state according to an embodiment of the present invention.

Referring to FIG. 9, the substrate processing apparatus 10 supplies a fluid to the fluid circulation space GR between the inner surface of the housing 500 and the outer surface of the reactor 100, and a fluid circulation unit capable of discharging ( 550, 570) may be further included. The fluid circulation units 550 and 570 may include a cooling unit/heating unit 550 capable of cooling/heating the fluid, and a blower 570 forming a moving air flow of the fluid.

During the substrate processing process, particularly the cooling process, there is a problem in that the heat inside the reactor 100 or the housing 500 is driven upwards and the cooling time is delayed. Accordingly, there is a need for a fluid circulation system capable of first cooling the heat load at the top rather than at the bottom of the reactor 100/housing 500.

The fluid circulation units 550 and 570 may supply fluid to the fluid circulation space GR through the fluid supply unit 510 formed in the upper region of the housing 500. The fluid supply unit 510 may mean a tube, hole, slit, etc. formed in the housing 500 such that the inner space GR of the housing 500 communicates with the fluid circulation units 550 and 570. The fluid supply unit 510 is preferably formed in the upper region of the housing 500 at the same or higher height than the substrate 50 disposed at the top of the reactor 100.

In addition, the fluid circulation units 550 and 570 may discharge fluid in the fluid circulation space GR through at least one fluid discharge unit 530 formed at a lower height than the fluid supply unit 510. The fluid discharge part 530 may mean a tube, a hole, a slit, etc. formed in the housing 500 such that the inner space GR of the housing 500 and the fluid circulation parts 550 and 570 communicate with each other like the fluid supply part. . A plurality of fluid discharge units 530 may be formed at predetermined intervals along the vertical direction of the housing. The fluid discharged through each fluid discharge part 530 may enter and circulate through the fluid passages 550 and 570 through each route, or the fluid circulation parts 550 and 570 may be combined into one route 530. ) To enter and cycle.

As described above, the substrate processing apparatus 10 of the present invention has an advantage of resolving the heat load at the top and improving the cooling efficiency as the system has a system for circulating fluid from the upper region to the lower region of the reactor 100. .

The present invention has been illustrated and described with reference to the preferred embodiments as described above, but is not limited to the above embodiments and is varied by those skilled in the art to which the invention pertains without departing from the spirit of the invention. Modifications and modifications are possible. Such modifications and variations are to be regarded as falling within the scope of the invention and appended claims.

10: substrate processing apparatus
50: substrate
100, 100-1, 100-2: reactor
101: insulation plate
110: reactor side
120: vertical frame
130: horizontal frame
140, 145: bracket
150: upper part of the reactor
160, 170: upper frame
200: waiting part
210: doorway
250: Manifold
260: gas supply
300: substrate loading unit
310: base
330: substrate support
350: heater unit
370: insulation
400: lift
500: housing
510: fluid supply
530: fluid outlet
550, 570: fluid circulation

Claims (18)

A substrate processing apparatus in which at least one substrate is processed,
A reactor that provides a chamber space in which the substrate is processed;
An atmosphere portion located at the bottom of the reactor and providing a space for loading/unloading the substrate;
A substrate loading unit on which at least one substrate is loaded;
Elevator for moving the substrate loading part up and down
Including,
Substrate loading part,
Base;
A substrate support formed in a vertical direction on the base; And
Heater unit that generates heat at a part spaced from the upper surface of the base
The substrate processing apparatus comprising a. According to claim 1,
As the substrate loading part is elevated, the upper rim of the base is detachably coupled to the lower surface of the manifold disposed at the bottom of the reactor,
A substrate processing apparatus wherein a substrate is loaded into a reactor when the base is coupled to the bottom surface of the manifold. According to claim 1,
The heater unit includes a plurality of heaters,
The heater,
A first non-heating portion extending from a first position of the base; And
A heating part having one end electrically connected to the first non-heating part so as to be spaced apart from the base by a first separation distance
The substrate processing apparatus comprising a. According to claim 3,
The heater,
And a second non-heating portion extending from the second position of the base and connected to the other end of the heating portion. According to claim 4,
The first non-heating portion and the second non-heating portion are formed in a direction perpendicular to the base, and the heat generating portion is formed in a direction parallel to the substrate or the base. According to claim 4,
The heater unit,
At least one first heater which is formed to be elongated in a first length at least in the front-rear direction of the base;
At least one second heater formed at least in a second length in the left-right direction of the base;
At least one third heater formed at least in a third length in the diagonal direction of the base;
A fourth heater formed in a first length and a fourth length shorter than the second length in the front-rear direction or the left-right direction of the base; And
A substrate processing apparatus made by selecting any one or more of these combinations. According to claim 1,
Laying the layer insulation in a plurality of layers on the base,
A substrate processing apparatus for arranging wall insulation surrounding a plurality of layer insulation. The method of claim 7,
In the layer heat insulating portion, a heater hole through which the heater portion passes is formed, the substrate processing apparatus. According to claim 1,
A substrate processing apparatus in which a plurality of gas supply portions extending in a vertical direction are disposed at a predetermined interval on the side of the chamber in the reactor. According to claim 2,
In the form surrounding the reactor, the housing further includes an open housing.
The lower portion of the housing is connected to the upper portion of the manifold, the substrate processing apparatus. The method of claim 10,
The housing includes a housing heater, a substrate processing apparatus. The method of claim 10,
And a fluid circulation portion that supplies/discharges fluid to a space between the inner surface of the housing and the outer surface of the reactor. The method of claim 12,
The fluid circulation part supplies fluid through the fluid supply part formed in the upper region of the housing,
A substrate processing apparatus for discharging fluid through at least one fluid discharge part formed at a lower height than the fluid supply part. The method of claim 13,
The fluid discharge portion is formed at a predetermined distance along the vertical direction of the housing, the substrate processing apparatus. According to claim 1,
The bottom of the reactor is open,
A substrate processing apparatus, wherein the reactor side and the upper portion have a closed shape including at least one insulating plate. The method of claim 15,
The reactor has a polygonal column shape with an open bottom, a substrate processing apparatus. According to claim 1,
At least one side, the substrate processing apparatus, the entrance is formed and open on at least one side. According to claim 1,
When the substrate loading portion is elevated and the upper edge of the base is coupled to the lower portion of the reactor, the chamber space of the reactor is sealed, the substrate processing apparatus.

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