KR20200072662A - Thin film laminated heating element and manufacturing method thereof - Google Patents

Thin film laminated heating element and manufacturing method thereof Download PDF

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KR20200072662A
KR20200072662A KR1020180160485A KR20180160485A KR20200072662A KR 20200072662 A KR20200072662 A KR 20200072662A KR 1020180160485 A KR1020180160485 A KR 1020180160485A KR 20180160485 A KR20180160485 A KR 20180160485A KR 20200072662 A KR20200072662 A KR 20200072662A
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deposit
heating element
thin film
alloy
manufacturing
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KR102265383B1 (en
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이석재
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하이엔드테크놀로지(주)
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Abstract

The present invention relates to a thin film laminated heating element and a manufacturing method thereof. First deposited materials and second deposited materials are alternately laminated, in which the first deposited material is any one selected from Ni, Ni alloy, and metal oxide, and the second deposited material is any one selected from Al and Al alloy. When the thin film laminated heating element and the manufacturing method thereof according to the present invention are used to enable the bonding process to be performed in a short time by instantly melting metal having a low melting point, harmful gas is prevented from being generated by high temperature heat, so as to increase the safety of the work environment while protecting health of a worker. In addition, high temperature heat is facilitated within a short time, so that a device requiring instant ignition and firing is applicable, and relatively large heat is generated through a small amount of external energy, thereby facilitating an energy saving effect.

Description

박막 적층 발열체 및 그 제조방법{Thin film laminated heating element and manufacturing method thereof}Thin film laminated heating element and its manufacturing method{Thin film laminated heating element and manufacturing method thereof}

본 발명은 박막 적층 발열체 및 그 제조방법에 관한 것으로서, 두 가지 이상의 소재를 나노 사이즈의 두께의 박막으로 반복 연속 적층하여 짧은 시간 안에 원소 간의 확산에 의해 고온의 열이 발생하도록 하는 박막 적층 발열체 및 그 제조방법에 관한 것이다.The present invention relates to a thin film stacked heating element and a method for manufacturing the same, wherein two or more materials are repeatedly stacked in a nano-sized thin film to produce high-temperature heat by diffusion between elements within a short time and the same. It relates to a manufacturing method.

자연계가 존재하는 소재들은 순수한 원소의 상태를 유지하는 것보다 원소들끼리 서로 섞여 엔트로피를 증가시키는 방향으로 진행하고자 하는 성질이 있다. 엔트로피를 증가시키는 비가역적 반응을 함으로써 원소들은 서로 혼합된 상태에서 안정상을 이루게 된다. 또한 순수한 금속 소재들은 산소 등과 반응하여 산화물 형태를 이루게 되는데, 이때 순수한 금속 상태보다 엔탈피가 낮아지게 되므로, 에너지적으로 안정한 상태가 된다.Materials in which the natural world exists tend to proceed in the direction of increasing entropy by mixing elements with each other, rather than maintaining the state of pure elements. By irreversible reactions that increase entropy, the elements form a stable phase in a mixed state. In addition, the pure metal materials react with oxygen and the like to form an oxide. At this time, since the enthalpy is lower than that of the pure metal, the energy is stable.

각 소재들은 엔트로피가 증가되거나 엔탈피가 낮아지는, 즉 에너지적으로 안정한 상태로 이동 시에, 두 상태의 엔탈피 차이만큼 발열이 발생하게 되는 발열 과정이 동반된다.Each material is accompanied by an exothermic process in which the entropy is increased or the enthalpy is lowered, that is, when moving to an energetically stable state, heat is generated as much as the difference in enthalpy between the two states.

고체 상태의 원소들의 혼합은 이종 이상의 원소 간 물리적 확산 현상에 의해 이루어지게 되어 두 소재의 계면에서부터 확산에 의해 점차 섞이는 확산층이 확장되게 된다.The mixing of elements in the solid state is achieved by physical diffusion phenomenon between two or more heterogeneous elements, and the diffusion layer gradually mixed by diffusion is expanded from the interface of the two materials.

종래의 발열체를 이용하여 저융점의 금속을 순간적으로 녹여 짧은 시간 안에 접합하는 공정을 시행할 시에, 고온의 열에 의해 유해 가스가 발생하게 되어 작업자의 건강을 위협하고, 작업환경의 안전성을 저하시킨다.When performing the process of melting the metal of a low melting point instantaneously using a conventional heating element and bonding in a short time, harmful gases are generated by high temperature heat, threatening the health of workers and deteriorating the safety of the working environment. .

또한, 종래의 발열체는 고온의 열을 발생시키기 위하여 긴 시간이 소요되므로, 점화 및 발화에는 적합하지 않다는 한계가 있다.In addition, the conventional heating element has a limitation in that it is not suitable for ignition and ignition because it takes a long time to generate high-temperature heat.

또한, 소재에 전기를 통하게 하여 소재가 가지고 있는 저항을 이용하여 발열을 하게 되므로, 발열을 위하여 큰 에너지가 필요하다는 문제가 있다.In addition, since the material is made to conduct electricity to generate heat using the resistance of the material, there is a problem that large energy is required for heat generation.

공개특허공보 제10-2005-0011766호Patent Publication No. 10-2005-0011766

본 발명은 상술한 문제점을 해결하기 위하여 안출된 것으로서, 본 발명의 목적은 저융점의 금속을 순간적으로 녹여 짧은 시간 내에 접합하는 공정을 수행할 수 있도록 하여, 고온의 열에 의해 유해 가스가 발생하지 않아, 작업자의 건강을 지키면서, 작업환경의 안전성을 상승시키는 박막 적층 발열체 및 그 제조방법을 제공하는 것이다.The present invention has been devised to solve the above-mentioned problems, and the object of the present invention is to melt the metal of the low melting point and perform a process of bonding in a short time, so that no harmful gas is generated due to high temperature heat. , It is to provide a thin film laminated heating element that increases the safety of the working environment while maintaining the health of the worker and a method for manufacturing the same.

또한, 본 발명의 다른 목적은 짧은 시간 내에 고온 발열이 가능하여 순간적인 점화 및 발화가 요구되는 장치에 적합한 박막 적층 발열체 및 그 제조방법을 제공하는 것이다.In addition, another object of the present invention is to provide a thin film laminated heating element suitable for a device requiring instantaneous ignition and ignition because a high temperature heat generation is possible within a short time and a method for manufacturing the same.

또한, 본 발명의 또 다른 목적은 적은 양의 외부 에너지를 통하여 상대적으로 큰 열을 발생시키므로, 에너지 절감이 가능한 박막 적층 발열체 및 그 제조방법을 제공하는 것이다.In addition, another object of the present invention is to provide a thin film laminated heating element capable of saving energy and a method for manufacturing the same, since relatively large heat is generated through a small amount of external energy.

상기 목적을 달성하기 위하여, 본 발명에 따른 박막 적층 발열체는,In order to achieve the above object, the thin film laminate heating element according to the present invention,

제1증착물(12) 및 제2증착물(13)이 교대로 적층되어 형성되되,The first deposit 12 and the second deposit 13 are formed by alternately stacked,

상기 제1증착물(12)은 Ni, Ni합금, 금속산화물 중에서 선택된 어느 하나이고,The first deposit 12 is any one selected from Ni, Ni alloy, and metal oxide,

상기 제2증착물(13)은 Al, Al합금 중에서 선택된 어느 하나인 것을 특징으로 한다.The second deposit 13 is characterized in that any one selected from Al, Al alloy.

또한, 본 발명에 따른 박막 적층 발열체에서,In addition, in the thin film laminated heating element according to the present invention,

상기 Ni합금은, Ni에 Cr, V, Si, Mo, W, Zn, Cu 중 적어도 한 개 이상의 원소와 혼합된 합금인 것을 특징으로 한다.The Ni alloy is characterized in that Ni is an alloy mixed with at least one element of Cr, V, Si, Mo, W, Zn, and Cu.

또한, 본 발명에 따른 박막 적층 발열체에서,In addition, in the thin film laminated heating element according to the present invention,

상기 Al합금은, Al에 Cr, Si, Mo, Cu, Zn, Mn 중 적어도 한 개 이상의 원소와 혼합된 합금인 것을 특징으로 한다.The Al alloy is characterized in that the alloy is a mixture of at least one element of Cr, Si, Mo, Cu, Zn, Mn in Al.

또한, 본 발명에 따른 박막 적층 발열체에서,In addition, in the thin film laminated heating element according to the present invention,

상기 금속산화물은, Fe₂O₃, CuO, NiO, WO₃, Bi₂O₃, ZnO, Cr₂O₃, MoO₃ 중 적어도 한 가지 이상을 포함한 산화물 또는 혼합 산화물인 것을 특징으로 한다.The metal oxide is characterized in that it is an oxide or a mixed oxide containing at least one of Fe₂O₃, CuO, NiO, WO₃, Bi₂O₃, ZnO, Cr₂O₃, MoO₃.

또한, 본 발명에 따른 박막 적층 발열체에서,In addition, in the thin film laminated heating element according to the present invention,

상기 제1증착물(12) 및 상기 제2증착물(13)의 두께는 5~100nm인 것을 특징으로 한다.The thickness of the first deposit 12 and the second deposit 13 is characterized in that 5 ~ 100nm.

또한, 본 발명에 따른 박막 적층 발열체를 제조하기 위한 박막 적층 발열체 제조방법은,In addition, a method for manufacturing a thin film multilayer heating element for manufacturing a thin film multilayer heating element according to the present invention,

기판(10) 상에 상기 제1증착물(12) 및 상기 제2증착물(13)을 교대로 적층하여 적층 구조체(11)를 형성하는 것을 특징으로 한다.The stacked structure 11 is formed by alternately stacking the first deposit 12 and the second deposit 13 on a substrate 10.

또한, 본 발명에 따른 박막 적층 발열체 제조방법에서,In addition, in the method of manufacturing a thin film laminated heating element according to the present invention,

상기 제1증착물(12) 및 상기 제2증착물(13)은, 상기 기판(10) 상에 물리적 기상 증착 방식 또는 스퍼터링 증착 방식을 이용하여 증착되는 것을 특징으로 한다.The first deposit 12 and the second deposit 13 are characterized by being deposited on the substrate 10 using a physical vapor deposition method or a sputtering deposition method.

또한, 본 발명에 따른 박막 적층 발열체 제조방법에서,In addition, in the method of manufacturing a thin film laminated heating element according to the present invention,

상기 적층 구조체(11)를 상기 기판(10)에서 박리하거나, 또는 상기 기판(10)과 일체화하여 박막 적층 발열체를 형성하는 것을 특징으로 한다.The laminated structure 11 is separated from the substrate 10 or integrated with the substrate 10 to form a thin film laminated heating element.

본 발명에 따른 박막 적층 발열체 및 그 제조방법을 이용함으로써, 저융점의 금속을 순간적으로 녹여 짧은 시간 내에 접합하는 공정을 수행할 수 있도록 하여, 고온의 열에 의해 유해 가스가 발생하지 않아, 작업자의 건강을 지키면서, 작업환경의 안전성을 상승시키는 효과가 있다.By using the thin-film lamination heating element according to the present invention and a method for manufacturing the same, it is possible to perform a process of instantly melting a metal of a low melting point and joining it within a short time, so that no harmful gas is generated due to high temperature heat, and health of workers While maintaining, it has the effect of increasing the safety of the working environment.

또한, 본 발명은 짧은 시간 내에 고온 발열이 가능하여 순간적인 점화 및 발화가 요구되는 장치에 적용가능하다는 효과가 있다.In addition, the present invention has an effect that it can be applied to a device that requires instantaneous ignition and ignition by enabling high-temperature heat generation in a short time.

또한, 본 발명은 적은 양의 외부 에너지를 통하여 상대적으로 큰 열을 발생시키므로, 에너지 절감 효과가 있다.In addition, since the present invention generates relatively large heat through a small amount of external energy, there is an energy saving effect.

도1은 본 발명에 따른 박막 적층 발열체에서 기판 상에 제1증착물 및 제2증착물이 증착된 것을 도시한 도면.
도2는 본 발명에 따른 박막 적층 발열체에서 기판 상에 제1증착물 및 제2증착물이 교대로 반복 증착된 것을 도시한 도면.
도3은 본 발명에 따른 박막 적층 발열체에서 제1증착물 및 제2증착물로 구성된 적층 구조체를 기판으로부터 박리하는 것을 도시한 도면.
1 is a view showing a first deposit and a second deposit deposited on a substrate in a thin film laminate heating element according to the present invention.
Figure 2 is a diagram showing that the first deposit and the second deposit are alternately repeatedly deposited on the substrate in the thin film laminate heating element according to the present invention.
FIG. 3 is a view showing peeling of a laminate structure composed of a first deposit and a second deposit from a substrate in the thin film laminate heating element according to the present invention.

이하 첨부된 도면을 참조하여 본 발명의 실시예를 구체적으로 설명하면 다음과 같다. 본 발명의 실시예는 여러 가지 형태로 변형될 수 있으며, 본 발명의 범위가 아래에서 설명하는 실시예에 한정되는 것으로 해석되어서는 안 된다. 본 실시예는 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 본 발명을 더욱 상세하게 설명하기 위해서 제공되는 것이다. 따라서 도면에 나타난 각 요소의 형상은 보다 분명한 설명을 강조하기 위하여 과장될 수 있다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be interpreted as being limited to the examples described below. This embodiment is provided to explain the present invention in more detail to those of ordinary skill in the art. Therefore, the shape of each element shown in the drawings may be exaggerated to emphasize a clearer explanation.

도1은 본 발명에 따른 박막 적층 발열체에서 기판 상에 제1증착물 및 제2증착물이 증착된 것을 도시한 도면, 도2는 본 발명에 따른 박막 적층 발열체에서 기판 상에 제1증착물 및 제2증착물이 교대로 반복 증착된 것을 도시한 도면, 도3은 본 발명에 따른 박막 적층 발열체에서 제1증착물 및 제2증착물로 구성된 적층 구조체를 기판으로부터 박리하는 것을 도시한 도면이다,1 is a view showing a first deposit and a second deposit deposited on a substrate in a thin film stacked heating element according to the present invention, and FIG. 2 is a first deposit and a second deposit on a substrate in a thin film stacked heating element according to the present invention 3 is a view showing repeated alternate deposition, and FIG. 3 is a view showing peeling of a laminated structure composed of a first deposit and a second deposit from a substrate in the thin film laminate heating element according to the present invention.

본 발명에 따른 박막 적층 발열체는, 제1증착물(12) 및 제2증착물(13)이 교대로 반복 적층되어 형성되되, 상기 제1증착물(12)은 Ni, Ni합금, 금속산화물 중에서 선택된 어느 하나이고, 상기 제2증착물(13)은 Al, Al합금 중에서 선택된 어느 하나인 것을 특징으로 한다.The thin film stacked heating element according to the present invention is formed by alternately stacking the first deposit 12 and the second deposit 13, wherein the first deposit 12 is any one selected from Ni, Ni alloy, and metal oxide. And, the second deposit 13 is characterized in that any one selected from Al, Al alloy.

제1증착물(12)과 제2증착물을 서로 다른 이종의 원소가 포함된 소재를 사용함으로써, 전압이 인가되거나 열이 가해지는 등 외부에서 자극에 주어졌을 때 제1증착물(12)의 소재와 제2증착물(13)의 소재가 경계면에서 확산에 의해 용이하게 섞이게 되거나, 금속산화물의 산소가 치환하여 알루미늄 산화물로 형성되며 발열이 이루어지게 된다. 이때, 섞임 또는 산화물 형성시 발생되는 에너지를 이용하여 발열체로 이용할 수 있게 된다.By using a material containing different heterogeneous elements for the first and second deposits 12 and 2, the material and the material of the first deposit 12 are applied to a stimulus from the outside, such as when a voltage is applied or heat is applied. 2 The material of the deposit 13 is easily mixed by diffusion at the interface, or oxygen of the metal oxide is replaced to form aluminum oxide and heat is generated. At this time, it can be used as a heating element by using energy generated during mixing or oxide formation.

이때, Ni합금은, Ni에 Cr, V, Si, Mo, W, Zn, Cu 중 적어도 한 개 이상의 원소와 혼합된 합금이고, Al합금은, Al에 Cr, Si, Mo, Cu, Zn, Mn 중 적어도 한 개 이상의 원소와 혼합된 합금으로 한다.In this case, the Ni alloy is an alloy mixed with at least one element of Cr, V, Si, Mo, W, Zn, and Cu in Ni, and the Al alloy is Cr, Si, Mo, Cu, Zn, and Mn in Al. It is made of an alloy mixed with at least one of the above elements.

여기서, 제1증착물(12)로 Ni 또는 Ni합금을 이용하고, 제2증착물(13)로 Al 또는 Al합금을 이용하여 이들을 반복하여 적층하고, 전압이 인가되거나 열이 가해지는 등 외부에서 자극에 주어졌을 때 제1증착물(12)의 소재와 제2증착물(13)의 소재의 경계면에서 각 소재의 자유전자가 경계면을 넘어 타 소재로 이동하는 확산 현상이 일어나고 타 소재와의 재 결합시 발열반응에 의해 열이 발생하게 되므로, 발열체를 형성하게 되는 것이다. Here, Ni or Ni alloy is used as the first deposit 12, and Al or Al alloy is used as the second deposit 13 to repeatedly stack them, and voltage is applied or heat is applied to the stimulus from the outside. When given, a diffusion phenomenon occurs in which free electrons of each material cross the boundary surface and move to another material at the interface between the material of the first deposit 12 and the material of the second deposit 13, and an exothermic reaction when recombining with other materials Because heat is generated by this, a heating element is formed.

즉, 이종 소재가 접촉시 서로 확산에 의해 섞이는 과정에서 각 소재에 속해있던 자유전자의 에너지 준위 차이에 따라 타 소재와의 재 결합시 열을 방출하며 결합하는 발열 현상이 동반되게 되는 것이다. 그러므로 소재 선택시 엔탈피 차이가 큰 이종 소재 조합을 선택하고, 이 소재들이 서로 접하게 되는 면적을 최대화 하며, 또한 확산이 매우 짧은 시간에 이루어지도록 두 소재간 간격을 매우 짧게 유지하도록 하면 매우 짧은 시간에 동시 다발적 확산에 의한 섞임이 발생하며 이를 통해 순간적 발열이 일어나게 된다. In other words, when heterogeneous materials are mixed by diffusion with each other when they are in contact with each other, recombination with other materials is accompanied by an exothermic phenomenon that emits heat when recombined with other materials according to the difference in energy level of free electrons belonging to each material. Therefore, when selecting materials, selecting a combination of different materials with a large enthalpy difference, maximizing the area where these materials come into contact with each other, and keeping the gap between the two materials very short so that diffusion occurs in a very short time can be achieved in a very short time. Mixing occurs due to multiple diffusions, and instantaneous fever occurs.

또한, 반복 적층되는 제1증착물(12) 및 제2증착물(13)의 각각의 증착 두께가 나노 크기 이므로 확산은 경계면 뿐만 아니라 전체 영역에서 일어날 수 있게 된다.In addition, since the deposition thickness of each of the first deposit 12 and the second deposit 13 which are repeatedly stacked is nano-sized, diffusion can occur not only in the interface but also in the entire region.

이때, 이종 소재 간의 섞임에 의하여 발열이 일어나더라도, 유해가스가 발생하지 않기 때문에, 작업 환경의 안전성이 상승하게 된다.At this time, even if heat is generated by mixing between different materials, since no harmful gas is generated, the safety of the working environment is increased.

또한, 본 발명의 제1증착물(12)로 사용되는 금속산화물은, Fe₂O₃, CuO, NiO, WO₃, Bi₂O₃, ZnO, Cr₂O₃, MoO₃ 중 적어도 한 가지 이상을 포함한 산화물 또는 혼합 산화물인 것을 특징으로 한다.In addition, the metal oxide used as the first deposit 12 of the present invention is characterized in that it is an oxide or a mixed oxide containing at least one of Fe₂O₃, CuO, NiO, WO₃, Bi₂O₃, ZnO, Cr₂O₃, MoO₃.

여기서, 제1증착물(12)로 금속산화물을 이용하게 되면, 전압이 인가되거나 열이나 약품이 가해지는 등 외부의 자극이 주어졌을 때 금속산화물에 포함된 산소가 제2증착물(13)인 Al 또는 Al합금과 반응하여 산화알루미늄으로 변환시 큰 발열현상이 일어나게 되는데, 이때 산소 가스도 발생할 수 있게 된다. 이와 같이 산화물과 금속간의 적층은 많을 발열 및 산소가스 등이 동반되므로 순간적 점화 장치에 적용 가능한 발열체가 될 수 있다. Here, when a metal oxide is used as the first deposit 12, when the external stimulus is applied, such as when a voltage is applied or heat or chemicals are applied, oxygen contained in the metal oxide is Al or the second deposit 13 When reacting with the Al alloy, a large exothermic phenomenon occurs when converting to aluminum oxide, and oxygen gas may also be generated. As described above, since the lamination between the oxide and the metal is accompanied by a lot of heat and oxygen gas, it can be a heating element applicable to an instantaneous ignition device.

여기서, 제1증착물(12)과 제2증착물(13)의 두께는 5~100nm로 하는 것이 바람직하다. 이는 제1증착물(12)과 제2증착물(13)이 접촉 경계면 뿐만 아니라 전 영역에서 확산이 일어나도록 하기 위한 것이다.Here, the thickness of the first deposit 12 and the second deposit 13 is preferably 5 to 100 nm. This is for the first deposit 12 and the second deposit 13 to cause diffusion to occur not only in the contact interface but also in the entire region.

또한, 이와 같이 제1증착물(12)과 제2증착물(13)을 교대로 반복 적층하되 제1증착물(12)과 제2증착물(13)을 1세트로 하여 대략 1000층 정도로 적층하게 되면 수십 마이크로 미터의 적층 구조체(11)가 된다.In addition, as described above, the first deposit 12 and the second deposit 13 are alternately stacked alternately, but when the first deposit 12 and the second deposit 13 are set as one set and stacked to about 1000 layers, several tens of micros It becomes the meter's laminated structure 11.

한 층의 제1증착물(12)과 인접한 한 층의 제2증착물(13) 간의 섞임에 의하여 발생하는 에너지를 1Q라고 가정하면, 위와 같이 1000층으로 적층된 마이크로 미터 두께의 적층 구조체(11)는 동시 다발적인 소재 간의 섞임에 의하여 짧은 시간 안에 1000Q의 에너지를 발생시키므로, 순간적인 자체 발열에 의한 점화장치 또는 저융점 소재를 녹여서 접합이 가능하도록 하는 용접장치로 사용가능하다.Assuming that the energy generated by mixing between the first deposit 12 of one layer and the second deposit 13 of one adjacent layer is 1Q, the micrometer-thick stack structure 11 stacked in 1000 layers as above is Since 1000 Q of energy is generated in a short time by mixing between multiple materials at the same time, it can be used as an ignition device by instantaneous self-heating or a welding device that allows melting by melting low-melting materials.

이과 같은 박막 적층 발열체를 제조하기 위하여,To produce such a thin film multilayer heating element,

본 발명에 따른 박막 적층 발열체 제조방법은, 기판(10) 상에 제1증착물(12) 및 제2증착물(13)을 교대로 반복하여 적층하여 적층 구조체(11)를 형성한다.In the method of manufacturing a thin film laminated heating element according to the present invention, the first deposit 12 and the second deposit 13 are alternately repeatedly stacked on the substrate 10 to form a stack structure 11.

여기서, 기판(10)은 세라믹 기판이 바람직하며, 세라믹 기판은 유리(glass), 세라믹 유리, 질화실리콘(Si₃N₄), 산화알루미늄(Al₂O₃), 질화알루미늄(AlN)을 사용하는 것이 바람직하다.Here, the substrate 10 is preferably a ceramic substrate, and the ceramic substrate is preferably glass, ceramic glass, silicon nitride (Si₃N₄), aluminum oxide (Al₂O₃), or aluminum nitride (AlN).

본 발명의 도1 내지 도3에는 기판(10) 상에 제1증착물(12)을 증착하고, 제1증착물(12) 상에 제2증착물(13)을 증착하고, 다시 제1증착물(12)을 증착하면서 반복하는 구조체(11)를 도시하였으나, 이에 한정하지 않고, 기판(10) 상에 제2증착물(13)을 증착하고, 제2증착물(13) 상에 제1증착물(12)을 증착하여 적층 구조체(11)를 형성하여도 무방함은 물론이다.1 to 3 of the present invention deposits the first deposit 12 on the substrate 10, deposits the second deposit 13 on the first deposit 12, and again the first deposit 12 While repeating the deposition while showing the structure 11, but is not limited to, depositing the second deposit 13 on the substrate 10, and depositing the first deposit 12 on the second deposit 13 It is needless to say that the stacked structure 11 may be formed.

여기서, 제1증착물(12) 및 제2증착물(13)을 증착하는 방법으로는, 물리적 기상 증착 방식을 이용하거나 회전하는 기판(10) 상에 스퍼터링 증착 방식을 이용하는 것이 바람직하나, 이에 한정하는 것은 아니며, 제1증착물(12) 및 제2증착물(13)을 균일한 두께로 증착할 수 있는 어떠한 방법을 사용하여도 무방하다.Here, as a method of depositing the first deposit 12 and the second deposit 13, it is preferable to use a physical vapor deposition method or a sputtering deposition method on a rotating substrate 10, but is not limited to this. No, any method capable of depositing the first deposit 12 and the second deposit 13 to a uniform thickness may be used.

또한, 제1증착물(12) 및 제2증착물(13)을 증착시키기 위하여, 제1증착물(12)을 토출하는 제1증착물 소스(미도시)와 제2증착물(13)을 토출하는 제2증착물 소스(미도시)가 구비될 수 있으며, 이때 제1증착물(12)이 증착될 시에는 제2증착물 소스(미도시)의 토출구는 소스덮개에 의하여 덮혀지고, 제2증착물(13)이 증착될 시에는 제1증착물 소스(미도시)의 토출구가 소스덮개에 의하여 덮혀지도록 구성할 수 있다.In addition, in order to deposit the first deposit 12 and the second deposit 13, a first deposit source (not shown) for discharging the first deposit 12 and a second deposit for discharging the second deposit 13 A source (not shown) may be provided. At this time, when the first deposit 12 is deposited, the outlet of the second deposit source (not shown) is covered by the source cover, and the second deposit 13 is deposited. At the time, the discharge port of the first deposit source (not shown) may be configured to be covered by the source cover.

또한, 본 발명에 따른 박막 적층 발열체를 제조하기 위하여, 적층 구조체(11)를 기판(10)에서 박리하여 이용하거나, 또는 기판(10)과 적층 구조체(11)를 일체화하여 이용하는 것이 가능하다.In addition, in order to manufacture the thin film laminated heating element according to the present invention, it is possible to use the laminated structure 11 by peeling off the substrate 10, or it is possible to use the substrate 10 and the laminated structure 11 integrally.

비록 본 발명이 상기에서 언급한 바람직한 실시예와 관련하여 설명되었지만, 본 발명의 요지와 범위로부터 벗어남이 없이 다른 수정이나 변형이 가능할 것이다. 그러므로 개시된 실시예들은 한정적인 관점이 아니라 설명적인 관점에서 고려되어야 한다. 본 발명의 범위는 전술한 설명이 아니라 특히 청구범위에 나타나 있으며, 그와 동등한 범위 내에 있는 모든 차이점은 본 발명에 포함된 것으로 해석되어야 할 것이다.Although the invention has been described in connection with the preferred embodiments mentioned above, other modifications or variations will be possible without departing from the spirit and scope of the invention. Therefore, the disclosed embodiments should be considered in terms of explanation, not limitation. The scope of the present invention is shown in the claims rather than the foregoing description, and all differences within the equivalent range should be construed as being included in the present invention.

10 : 기판 11 : 적층 구조체
12 : 제1증착물 13 : 제2증착물
10: substrate 11: laminated structure
12: first deposit 13: second deposit

Claims (8)

제1증착물(12) 및 제2증착물(13)이 교대로 적층되어 형성되되,
상기 제1증착물(12)은 Ni, Ni합금, 금속산화물 중에서 선택된 어느 하나이고,
상기 제2증착물(13)은 Al, Al합금 중에서 선택된 어느 하나인 것을 특징으로 하는 박막 적층 발열체.
The first deposit 12 and the second deposit 13 are formed by alternately stacked,
The first deposit 12 is any one selected from Ni, Ni alloy, and metal oxide,
The second deposit 13 is a thin film laminate heating element, characterized in that any one selected from Al, Al alloy.
제 1항에 있어서,
상기 Ni합금은, Ni에 Cr, V, Si, Mo, W, Zn, Cu 중 적어도 한 개 이상의 원소와 혼합된 합금인 것을 특징으로 하는 박막 적층 발열체.
According to claim 1,
The Ni alloy, Ni, Cr, V, Si, Mo, W, Zn, Cu, a thin film laminate heating element, characterized in that an alloy mixed with at least one or more elements.
제 1항에 있어서,
상기 Al합금은, Al에 Cr, Si, Mo, Cu, Zn, Mn 중 적어도 한 개 이상의 원소와 혼합된 합금인 것을 특징으로 하는 박막 적층 발열체.
According to claim 1,
The Al alloy is an alloy mixed with at least one or more elements of Cr, Si, Mo, Cu, Zn, and Mn in Al.
제 1항에 있어서,
상기 금속산화물은, Fe₂O₃, CuO, NiO, WO₃, Bi₂O₃, ZnO, Cr₂O₃, MoO₃ 중 적어도 한 가지 이상을 포함한 산화물 또는 혼합 산화물인 것을 특징으로 하는 박막 적층 발열체.
According to claim 1,
The metal oxide is Fe₂O₃, CuO, NiO, WO₃, Bi₂O₃, ZnO, Cr₂O₃, MoO₃, or a thin film multilayer heating element, characterized in that the oxide or mixed oxide containing at least one.
제 1항에 있어서,
상기 제1증착물(12) 및 상기 제2증착물(13)의 두께는 5~100nm인 것을 특징으로 하는 박막 적층 발열체.
According to claim 1,
The thickness of the first deposit 12 and the second deposit 13 is a thin film laminated heating element, characterized in that 5 ~ 100nm.
제 1항 내지 제 5항 중 어느 한 항의 박막 적층 발열체를 제조하기 위하여,
기판(10) 상에 상기 제1증착물(12) 및 상기 제2증착물(13)을 교대로 적층하여 적층 구조체(11)를 형성하는 것을 특징으로 하는 박막 적층 발열체 제조방법.
To manufacture the thin film laminate heating element of any one of claims 1 to 5,
A method of manufacturing a thin film laminate heating element, wherein the first deposit 12 and the second deposit 13 are alternately stacked on the substrate 10 to form a stacked structure 11.
제 6항에 있어서,
상기 제1증착물(12) 및 상기 제2증착물(13)은, 상기 기판(10) 상에 물리적 기상 증착 방식 또는 스퍼터링 증착 방식을 이용하여 증착되는 것을 특징으로 하는 박막 적층 발열체 제조방법.
The method of claim 6,
The first deposit 12 and the second deposit 13 are deposited on the substrate 10 using a physical vapor deposition method or a sputtering deposition method.
제 6항에 있어서,
상기 적층 구조체(11)를 상기 기판(10)에서 박리하거나, 또는 상기 기판(10)과 일체화하여 박막 적층 발열체를 형성하는 것을 특징으로 하는 박막 적층 발열체 제조방법.
The method of claim 6,
A method of manufacturing a thin film laminated heating element, wherein the laminated structure (11) is peeled from the substrate (10) or integrated with the substrate (10) to form a thin film laminated heating element.
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