KR102558286B1 - Copper continuous deposition source - Google Patents

Abstract

The present invention relates to a copper continuous deposition source capable of continuously and stably evaporating copper at a high rate in performing a copper deposition process.
A copper continuous deposition source according to the present invention includes a substrate made of a conductive heating material; a buffer layer formed on the substrate; and a metal layer formed on the buffer layer.
And, the metal layer is formed of at least one selected from one or more metal groups having a higher melting point than copper (hereinafter referred to as 'first metal group').
And, the buffer layer is formed to include at least one carbide selected from the first metal group.

Description

Copper continuous deposition source {COPPER CONTINUOUS DEPOSITION SOURCE}

The present invention relates to a resistive heating type deposition source, and more particularly, to a copper continuous deposition source capable of continuously and stably depositing copper at a high rate in performing a copper deposition process.

FCCL (Flexible Copper Clad Laminated) is a key material used in FPCB (Flexible Circuit Board) and has excellent heat resistance, bending resistance, and chemical resistance, so it is used in almost all electronic devices such as 5G mobile communication, displays, smartphones, automobiles, aviation, medical devices, and industrial control devices.

FCCL is usually attached to one or both sides of a polyimide film through copper foil lamination or manufactured using a wet coating method, and the dry coating method (PVD, Physical Vapor Deposition) has not been adopted due to technical difficulties and low productivity.

Recently, there is a need for FCCL with improved transmission loss performance compared to conventional FCCL in fields such as high-performance electric vehicles, high-end electronic products, and 5G mobile communication.

However, FCCL according to the existing laminating and wet plating method has limitations in improving signal loss and delay problems, and FCCL according to the existing dry coating method can improve signal loss and delay problems, but is not applied due to technical difficulties and low productivity.

Therefore, it is very effective in solving the signal loss and delay problems of FCCL even when using an existing substrate, that is, polyimide (PI) material, while overcoming the limitations of controlling the thickness and surface roughness of the existing laminating and wet plating methods. There is a demand for copper thin film deposition / coating technology that can be manufactured with high productivity.

Meanwhile, when the dry coating method is applied, a method of depositing copper using a resistance heating source may be considered. In this case, there are the following problems.

Conventional resistance heating method deposition sources are generally formed of ceramic materials. When such ceramic deposition sources are used, sloshing or fluctuation of the copper melt is induced, and as a result, the copper melt overflows out of the deposition source or is scattered, so-called splash phenomenon in which lumpy melt protrudes and sticks occurs frequently, resulting in damage and defects of the deposited material.

In addition, the conventional resistive heating type deposition source is only available for batch type, and for this reason, there is a limitation in that a process of continuously depositing copper for a long time of at least 5 hours is impossible.

Korean Patent Publication No. 10-2015-0138679 (published on December 10, 2015)

The present invention is to solve the above problems, and an object of the present invention is to improve the transmission loss rate performance in copper foil used in electric and electronic components such as FCCL, and in particular, to continuously deposit copper for a long time, thereby providing a copper continuous deposition source that can be manufactured with high productivity.

Another object of the present invention is to provide a copper continuous deposition source capable of continuously and stably depositing copper at a high speed by preventing splashing or arcing even when copper foil is formed as a resistance heating source.

A copper continuous deposition source according to the present invention for achieving the above object includes a substrate of a conductive heating material; a buffer layer formed on the substrate; and a metal layer formed on the buffer layer.

And, the metal layer is formed of at least one selected from one or more metal groups having a higher melting point than copper (hereinafter referred to as 'first metal group').

And, the buffer layer is formed to include at least one carbide selected from the first metal group.

According to one embodiment, the metal layer may be formed of at least one selected from molybdenum, tungsten, and tantalum.

The buffer layer may include at least one selected from molybdenum carbide, tungsten carbide, and tantalum carbide.

According to one embodiment, the buffer layer may be formed to satisfy Conditional Expression 1 below.

conditional expression 1

0.01% ≤ Bt/Mt ≤ 20%

(In Conditional Expression 1, Bt: the thickness of the buffer layer, Mt: the thickness of the metal layer)

According to the copper continuous deposition source according to the present invention, a copper foil with improved transmission loss performance can be manufactured in one in-situ process, and in particular, a copper thin film can be continuously manufactured at one time without interruption of copper supply. The yield can be maximized, the process can be simplified, the process speed can be improved, and as a result, high-performance copper foil for electronic components can be manufactured with high productivity.

In addition, according to the copper continuous deposition source according to the present invention, there is an effect that can prevent damage to the deposition source due to arcing, temperature deviation increase due to deformation / lifting of the metal layer and permeation / penetration of the melt, and splash phenomenon.

In addition, due to the buffer layer interposed between the substrate and the metal layer, the substrate and the metal layer act like a heating element made of one bulk, and thus, the uniformity and stability of the deposition amount per unit time, and the deposition rate. There is an advantage that can be greatly improved.

In addition, even if the deposited material (eg, flexible substrate, etc.) is continuously supplied through a roll-to-roll (R2R) method and a copper deposition process is performed for a long time, there is an advantage in that problems such as damage to the deposition source or lowering of the evaporation rate do not occur at all.

1 is a plan view of a continuous copper deposition source according to the present invention;
Figure 2 is a cross-sectional view in the AA 'direction of Figure 1;
3 is a BB′ direction cross-sectional view of FIG. 1;
4 is an enlarged view of 'C1' of FIGS. 2 and 3;
5 is a cross-sectional view of a copper continuous deposition source according to the present invention.
6 is an enlarged view of 'K1' of FIG. 5;
7 is a scanning electron microscope (SEM) analysis cross-sectional photograph of a copper thin film prepared according to Example 1 of the present invention.
8 is a scanning electron microscope (SEM) analysis surface photograph of a copper thin film prepared according to Example 1 of the present invention.
9 is a scanning electron microscope (SEM) analysis cross-sectional photograph of a copper thin film prepared according to Comparative Example 1;
10 is a scanning electron microscope (SEM) analysis surface photograph of a copper thin film prepared according to Comparative Example 1;

Terms used in this specification are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, the terms "comprise" or "have" are intended to designate that a feature, number, step, operation, component, part, or combination thereof described in the specification exists, but it should be understood that the presence or addition of one or more other features or numbers, steps, operations, components, parts, or combinations thereof is not excluded in advance.

Also, in the present specification, "on ~ or ~ on top" means located above or below the target part, which does not necessarily mean located on the upper side relative to the direction of gravity. That is, "on ~ or on ~" as used herein includes not only the case of being located above or below the target part, but also the case of being located in front of or behind the target part.

In addition, when a part such as a region, plate, etc. is said to be "on or over" another part, this includes not only the case where it is in contact with or spaced apart from the other part "directly on or above", but also the case where there is another part in the middle.

In addition, in the present specification, when one component is referred to as "connected" or "connected" to another component, the one component may be directly connected or directly connected to the other component, but unless otherwise specifically stated, it should be understood that it may be connected or connected through another component in the middle.

Also, in this specification, terms such as first and second may be used to describe various components, but the components should not be limited by the terms. These terms are only used for the purpose of distinguishing one component from another.

Hereinafter, preferred embodiments, advantages and characteristics of the present invention will be described in detail with reference to the accompanying drawings.

1 is a plan view of a copper continuous deposition source according to the present invention, FIG. 2 is a cross-sectional view in the direction A-A' of FIG. 1, FIG. 3 is a cross-sectional view in the direction B-B' of FIG. 1, and FIG. 4 is an enlarged view of 'C1' in FIGS. 2 and 3.

1 to 4, the copper continuous deposition source according to the present invention includes a substrate 10 made of a conductive heating material, a buffer layer 20 formed on the substrate 10, and a metal layer 30 formed on the buffer layer 20.

And, the metal layer 30 is characterized in that it is formed of at least one selected from one or more metal groups having a higher melting point than copper (hereinafter, referred to as a 'first metal group').

And, the buffer layer 20 is characterized in that it is formed by including at least one carbide selected from the first metal group.

Specifically, the substrate 10 of the present invention is a heating element that is heated by resistance when current is applied thereto, and functions as a heat source for converting copper continuously supplied to the deposition source into gaseous copper vapor.

Accordingly, the substrate 10 may be formed of a conductive heating material having excellent resistance heating characteristics. According to one embodiment, the substrate 10 may be formed of a graphite material or may be formed of an amorphous carbon material.

The substrate 10 may be processed and formed into a plate shape or a substantially bar shape having a certain horizontal length, vertical length and thickness.

For reference, the term 'horizontal length' used in the present invention means the length in the direction in which current flows when power is applied to the substrate 10, and 'vertical length' means the length perpendicular to the horizontal length.

The substrate 10 may be heated by a power supply. Specifically, the substrate 10 is It may be heated to a temperature value within a predetermined range to melt and evaporate the copper wire supplied by the copper supply unit. At this time, the heating temperature of the substrate 10 may be determined based on the thickness of the copper layer to be deposited on the flexible substrate.

On the other hand, the substrate 10 may have an accommodation groove 13 of a concave structure formed on its upper surface, and in this case, the accommodation groove 13 is preferably formed in the central region of the substrate 10.

The receiving groove 13 is an area in which the buffer layer 20 and the metal layer 30 are provided among the entire area of the substrate 10 . That is, the buffer layer 20 and the metal layer 30 may be formed in the receiving groove 13 .

According to one embodiment, the receiving groove 13 may be formed in the form of a groove recessed to a predetermined depth on the upper surface of the substrate 10 as shown in FIGS. 2 and 3, and in this case, the groove may be formed in a substantially rectangular shape.

According to one embodiment, the receiving groove 13 may be formed to have a certain horizontal and vertical length, such as a rectangular shape as shown in FIG. At this time, if the horizontal length of the receiving groove 13 is too long, the heating temperature may vary, and conversely, if the vertical length is too long, the resistance value is lowered and the amount of heat generated is reduced. Therefore, it is preferable to form within a certain length range through calculation or experiment.

According to one embodiment, the horizontal length of the receiving groove 13 may be formed longer than the vertical length.

The receiving groove 13 may be formed to have a certain depth. At this time, if the depth of the receiving groove 13 is too deep, the portion where the receiving groove 13 is formed of the base material 10 is structurally weak and there is a risk of damage, and if the depth of the receiving groove 13 is too shallow, there is a problem in that a lot of power is consumed to reach and maintain the target temperature of the base material, thereby narrowing the process range. Therefore, the depth of the receiving groove 13 is preferably formed within a certain depth range through calculation or experimentation.

Considering this, the height of the inner wall 11 forming the receiving groove 13 ('h2' in FIG. 4) is equal to or greater than the sum of the thicknesses of the metal layer 30 and the buffer layer 20 ('h1' in FIG. 2). Here, the 'inner wall' forming the receiving groove 13 may be the inner wall 11 of the receiving groove 13 region facing the side surface (ie, the circumference) of the metal layer 30 .

The buffer layer 20 of the present invention is formed between the substrate 10 and the metal layer 30 and corresponds to a functional layer serving to stabilize an interface between the substrate 10 and the buffer layer 20 .

The buffer layer 20 is formed of a carbide of at least one metal selected from the first metal group. That is, the buffer layer 20 is formed by including the carbide of the metal component constituting the metal layer 30 .

According to an embodiment, the buffer layer 20 may include at least one selected from molybdenum carbide, tungsten carbide, and tantalum carbide.

According to one embodiment, when the buffer layer 20 includes molybdenum carbide, the molybdenum carbide may include at least one of Mo ₂ C and MoC.

According to an embodiment, when the buffer layer 20 includes tungsten carbide, the tungsten carbide may include at least one of W ₂ C and WC.

According to an embodiment, when the buffer layer 20 includes tantalum carbide, the tantalum carbide may include at least one of Ta ₂ C and TaC.

Such a buffer layer 20 may be formed through various methods. According to one embodiment, the buffer layer 20 may be formed on the substrate 10 using a spray coating method.

According to another embodiment, the buffer layer 20 may be formed on the substrate 10 using chemical vapor deposition (CVD) or physical vapor deposition (PVD).

According to another embodiment, the buffer layer 20 may be formed in a foil shape. In this case, it may be formed by placing a foil-shaped buffer layer 20 on the substrate 10 and bonding it to the substrate 10 by direct heating or indirect heating.

The function of the buffer layer 20 will be described in more detail as follows. To this end, it is assumed that the buffer layer 20 is not formed between the substrate 10 and the metal layer 30, and only the metal layer 30 in the form of a foil is attached on the substrate 10.

In this case, the resistance becomes relatively higher at the interface between the substrate 10 and the metal layer 30, and accordingly, a phenomenon such as arcing occurs at the interface, so that the substrate 10 to the metal layer 30 may be damaged.

In addition, a problem in that heat due to resistance heating of the substrate 10 is not effectively conducted to the metal layer 30 is caused. In this case, since there is a limit to increasing the temperature of the substrate 10 to prevent damage to the substrate 10 and melting of the melt, this eventually acts as a factor in lowering the deposition rate of copper.

In addition, when the buffer layer 20 does not exist, the metal layer 30 may be deformed or lifted due to high temperature, and copper melt or evaporation may permeate or penetrate between the substrate 10 and the metal layer 30. A phenomenon may be caused.

However, such deformation/floating/permeation/penetration phenomena act as factors that further increase the temperature deviation for each surface portion of the metal layer 30, and the flow of the melt is generated by this temperature difference, eventually causing the melt to fluctuate or fluctuate.

In this way, when the sloshing or fluctuation of the melt is induced, the melt overflows out of the evaporation source or the loss of the evaporation occurs due to the scattering of the evaporation, as well as the so-called splash phenomenon in which the melt in the form of a lump protrudes and sticks. As a result, splash damage, damage and defects of the deposited material, etc. occur.

In particular, when a copper deposition process is performed for a long time in a conventional resistance heating type deposition source, problems such as damage to the deposition source or a decrease in deposition rate may occur.

On the other hand, when the buffer layer 20 according to the present invention is present between the substrate 10 and the metal layer 30, the problem of damage to the deposition source due to the occurrence of arcing at the interface portion described above, the deformation / lifting of the metal layer 30 and the problem of temperature deviation increase due to permeation / penetration of melt, inefficient heat conduction problem, splash phenomenon, etc. can be prevented.

Furthermore, when the buffer layer 20 is interposed between the base material 10 and the metal layer 30, the base material 10 and the metal layer 30 act like a heating element made of one bulk, and accordingly, the uniformity and stability of the deposition amount per unit time and the deposition rate can be greatly improved.

In addition, there is an advantage in that problems such as damage to a deposition source or a decrease in deposition rate do not occur at all even if an object to be deposited (eg, a flexible substrate) is continuously supplied through a roll to roll method and a copper deposition process is performed for a long time.

According to a preferred embodiment, the buffer layer 20 may be formed to satisfy Conditional Expression 1 below.

conditional expression 1

0.01% ≤ Bt/Mt ≤ 20%

(In Conditional Expression 1, Bt: the thickness of the buffer layer 20, Mt: the thickness of the metal layer 30)

That is, the thickness of the buffer layer 20 may be formed to a thickness of 0.01% to 20% of the thickness of the metal layer 30 . This is because, when the thickness of the buffer layer 20 is formed to be less than 0.01% of the thickness of the metal layer 30, there is little effect of reducing the deposition source damage due to the occurrence of arcing at the interface portion described above, the deformation / lifting of the metal layer 30, and the temperature deviation increase due to permeation / penetration of the melt, the evaporation product splash phenomenon, etc.

And, when the thickness of the buffer layer 20 is formed to exceed 20% of the thickness of the metal layer 30, the heating efficiency of the buffer layer 20 is greatly reduced, and accordingly, the amount of deposition per unit time or the deposition efficiency is rapidly reduced.

5 is a cross-sectional view of a continuous copper deposition source according to the present invention, and FIG. 6 is an enlarged view of 'K1' in FIG. 5 .

According to an example of the present invention, the buffer layer 20 may include a region in which the components of the carbide constituting the buffer layer 20 and the conductive heating material constituting the substrate 10 are mixed, that is, a mixed region (hereinafter referred to as a 'first mixed region'; see '20b' in FIG. 6) in a boundary region with the substrate 10.

According to an example of the present invention, the buffer layer 20 may include a region in which the carbide constituting the buffer layer 20 and the metal component constituting the metal layer 30 are mixed, that is, a mixed region (hereinafter referred to as a 'second mixed region'; see '20c' in FIG. 6) in a boundary region with the metal layer 30.

According to one example of the present invention, the buffer layer 20 may be formed to include a region in which the composition ratio of carbides constituting the corresponding buffer layer 20 gradually changes in its thickness direction.

Here, the "composition ratio of carbide" may mean the ratio of the amount of carbide components included in the total amount of all components constituting the corresponding region. And, the "gradual change in the composition ratio" may mean that the composition ratio of carbides does not change so as to be distinctly divided or segmented, but changes while forming a gradient in the content of carbides.

According to an embodiment, the buffer layer 20 may be formed to have both a region in which the composition ratio of carbides constituting the corresponding buffer layer 20 gradually increases and a region in which the composition ratio of the carbides gradually decreases in its thickness direction.

Referring to FIG. 6 , the buffer layer 20 may include a region in which the composition ratio of carbide of the buffer layer 20 gradually increases in the thickness direction (ie, from the lower side of the buffer layer 20 to the upper side) in the region including the region 20b (ie, the first mixed region) and the region 20a.

In addition, the buffer layer 20 may include a region in which the composition ratio of the carbide of the buffer layer 20 gradually decreases in the thickness direction (ie, from the lower side to the upper side of the buffer layer 20) within the region including the region '20a' and the region '20c' (ie, the second mixed region).

According to one example of the present invention, the copper continuous deposition source may have a color that gradually changes in a boundary region between the substrate 10 and the buffer layer 20 . Specifically, the color of the substrate 10 and the color of the buffer layer 20 may be gradually changed without being changed so that the boundary is distinctly separated or segmented from each other.

Meanwhile, in the boundary region between the substrate 10 and the buffer layer 20, the 'color' is defined as follows. That is, the term 'color' used in the present invention includes a color that varies according to saturation or lightness as well as an inherent characteristic (ie, color) of the color itself.

Therefore, according to the definition of color in the present invention, a black color of a first saturation (or brightness) and a black color of a second saturation (or brightness) higher than the first saturation (or brightness) correspond to different colors.

The metal layer 30 of the present invention is configured to melt copper continuously supplied onto the metal layer 30 to make copper vapor. That is, when power is applied to the base material 10, resistance heating occurs, and as a result, copper on the metal layer 30 melts, a wetting phenomenon occurs on the surface of the metal layer 30, and evaporation occurs.

Therefore, in order to effectively cause high-speed evaporation, the metal layer 30 is preferably formed of a material that has excellent wettability (or spreadability, wetting property) and fire resistance of copper and low reactivity with copper.

Considering the required characteristics of the metal layer 30, the metal layer 30 may be formed of at least one selected from one or more metal groups having a higher melting point than copper (hereinafter, referred to as a 'first metal group').

According to one embodiment, the metal layer 30 may be formed of at least one selected from molybdenum (Mo), tungsten (W), and tantalum (Ta).

The metal layer 30 may be formed to have a thickness of 0.01 to 5 mm. This is because the thinner the metal layer 30 is, the more heat is generated, which is advantageous for high-speed evaporation, but the rate at which deformation of the metal layer 30 itself due to high temperature increases in proportion to this.

Through a number of experiments, it was confirmed that the thermal strain generation rate of the metal layer 30 was extremely low at a thickness of 0.01 mm or more, and rapidly increased at a thickness less than 0.01 mm.

The metal layer 30 is provided on the buffer layer 20 and may be formed through various methods. According to one embodiment, the metal layer 30 may be formed on the buffer layer 20 using a spray coating method.

According to another embodiment, the metal layer 30 may be formed on the buffer layer 20 using chemical vapor deposition (CVD) or physical vapor deposition (PVD).

According to another embodiment, the metal layer 30 may be formed in a foil shape. In this case, it may be formed by placing a foil-shaped metal layer 30 on the buffer layer 20 and bonding it to the buffer layer 20 by direct heating or indirect heating.

On the other hand, when the buffer layer 20 and the metal layer 30 are stacked on the base material 10 in the receiving groove 13, the metal layer 30 has its periphery of the receiving groove 13. It is preferable to form with a spaced distance from the inner wall 11.

This is because the metal layer 30 made of a metal material may undergo thermal expansion due to high temperature, and at this time, since the metal layer 30 has a higher thermal expansion rate than the substrate 10, the inner wall 11 of the receiving groove 13 If not spaced apart, there is a risk of deformation or damage due to mutual interference.

According to an embodiment, the metal layer 30 may be formed to satisfy Conditional Expression 2 below.

conditional expression 2

25% ≤ Ma/Sa ≤ 85%

(In Conditional Expression 2, Ma: area of metal layer 30, Sa: area of substrate 10)

That is, the area of the metal layer 30 may be formed to a thickness of 25% to 85% of the area of the substrate. This is because, when the area of the metal layer 30 is formed to be less than 25% of the area of the substrate, the copper wire may not be effectively seated on the metal layer 30 and a part of it may be separated.

According to one embodiment, the metal layer 30 may have a horizontal length longer than a vertical length.

If the vertical length is formed longer than the horizontal length, the temperature deviation of the metal layer 30 becomes severe and the copper molten liquid moves to the high-temperature part, and as a result, when the opposite side is heated again while the part cools down, a so-called fluctuation phenomenon that is drawn in the opposite direction occurs severely. If the shaking phenomenon becomes severe, a phenomenon in which the copper melt escapes from the metal layer 30 occurs, and as a result, a scattering phenomenon occurs while the separated copper melt contacts the portion of the base material 10 forming the receiving groove.

Hereinafter, the copper continuous deposition source of the present invention will be described in more detail through the following examples and comparative examples. However, the following examples are merely illustrative of the content of the present invention, but the scope of the invention is not limited by the examples.

[Example 1]

The copper continuous deposition source according to Example 1 was manufactured under the following conditions.

(1) Substrate: Graphite

(2) Buffer layer: molybdenum carbide, thickness 0.052 mm, width 180 cm, length 30 cm

(3) Metal layer: molybdenum, thickness 1.2mm, width 180cm, length 30cm

Then, after the deposition source according to Example 1 was installed inside the vacuum chamber, copper was deposited on the flexible substrate while continuously supplying copper wires under the following process conditions.

(4) Degree of vacuum: 1*10 ^-5 Torr or less

(5) Deposition time: 5 hours

(6) Flexible substrate: polyimide (PI), 12 cm × 12 cm × 1.3 mm (width × length × thickness)

7 is a scanning electron microscope (SEM) analysis cross-sectional photograph of a copper thin film prepared according to Example 1 of the present invention, and FIG. 8 is a scanning electron microscope (SEM) analysis surface photograph of a copper thin film prepared according to Example 1 of the present invention.

As a result of the test according to Example 1, it was confirmed that the deposition source was not damaged at all due to the above-mentioned arcing phenomenon, and as can be seen in FIGS. 7 and 8, copper droplets due to the splash phenomenon also did not occur at all.

And, even if the copper deposition process is performed for a long time of 5 hours or more, it has been confirmed that problems such as damage to the deposition source of the present invention or a decrease in evaporation rate do not occur at all.

[Comparative Example 1]

The copper continuous deposition source according to Comparative Example 1 is manufactured under the same conditions as Example 1, except that the thickness of the buffer layer 20 is less than 0.01% of the thickness of the metal layer 30.

A copper continuous deposition source according to Comparative Example 1 was manufactured under the following conditions.

(1) Substrate: Graphite

(2) Buffer layer: molybdenum carbide, thickness 0.1 μm, width 180 cm, length 30 cm

(3) Metal layer: molybdenum, thickness 1.2mm, width 180cm, length 30cm

Then, after the deposition source according to Comparative Example 1 was installed inside the vacuum chamber, copper was deposited on the flexible substrate while continuously supplying copper wires under the following process conditions.

(4) Degree of vacuum: 1*10 ^-5 Torr or less

(5) Deposition time: 5 hours

(6) Flexible substrate: polyimide (PI), 12 cm × 12 cm × 1.3 mm (width × length × thickness)

9 is a scanning electron microscope (SEM) analysis cross-sectional photograph of a copper thin film prepared according to Comparative Example 1, and FIG. 10 is a scanning electron microscope (SEM) analysis surface photograph of a copper thin film prepared according to Comparative Example 1.

As a result of the test according to Comparative Example 1, when the copper deposition process was performed for a long time of 5 hours or more, an arcing phenomenon was accumulated and the deposition source was damaged, and a splash phenomenon occurred, so that copper droplets were attached to the flexible substrate as shown in FIGS. 9 and 10.

As can be seen from Example 1 and Comparative Example 1, according to the copper continuous deposition source of the present invention, it is possible to continuously deposit copper stably for a long time while preventing splash or arcing.

Accordingly, product yield can be maximized, processes can be simplified, process speed can be improved, and as a result, high-performance copper foil for electronic parts can be manufactured with high productivity.

Although the preferred embodiments of the present invention have been described and illustrated using specific terms above, such terms are only used to clearly explain the present invention, and the embodiments and described terms of the present invention are the following claims. It is obvious that various changes and changes can be made without departing from the spirit and scope. Such modified embodiments should not be individually understood from the spirit and scope of the present invention, and should be said to fall within the scope of the claims of the present invention.

10: substrate 13: receiving groove
20: buffer layer 30: metal layer

Claims (13)

As a source used for continuously heating and evaporating continuously supplied copper to deposit it on an object to be deposited,
A substrate formed of a conductive heating material and heated when current is applied;
a buffer layer formed on the substrate; and
Including; a metal layer formed on the buffer layer,
The metal layer,
It is formed of at least one selected from the group of one or more metals having a higher melting point than copper,
It is configured to heat and evaporate copper continuously supplied on the metal layer,
The buffer layer,
A copper continuous deposition source, characterized in that formed by including at least one carbide selected from metal components constituting the metal layer.
According to claim 1,
The metal layer,
formed of at least one selected from molybdenum, tungsten, and tantalum;
The buffer layer,
A copper continuous deposition source comprising at least one selected from molybdenum carbide, tungsten carbide, and tantalum carbide.
According to claim 1,
The buffer layer is a copper continuous deposition source, characterized in that formed to satisfy the following Conditional Expression 1.
conditional expression 1
0.01% ≤ Bt/Mt ≤ 20%
(In Conditional Expression 1, Bt: the thickness of the buffer layer, Mt: the thickness of the metal layer)
According to claim 3,
Copper continuous deposition source, characterized in that the thickness of the metal layer is 0.01 ~ 5mm.
According to claim 1,
The metal layer is a copper continuous deposition source, characterized in that formed to satisfy the following Conditional Expression 2.
conditional expression 2
25% ≤ Ma/Sa ≤ 85%
(In Conditional Expression 2, Ma: area of the metal layer, Sa: area of the substrate)
According to claim 2,
The molybdenum carbide includes Mo ₂ C or MoC,
The tungsten carbide includes W ₂ C or WC,
The tantalum carbide is a copper continuous deposition source, characterized in that it comprises Ta ₂ C or TaC.
According to claim 1,
The buffer layer,
A copper continuous deposition source comprising a region in which components of the carbide and the conductive heating material of the substrate are mixed in a boundary region with the substrate.
According to claim 1,
The buffer layer,
and a region in which the composition ratio of the carbide gradually changes in the thickness direction of the buffer layer.
According to claim 8,
The buffer layer,
The copper continuous deposition source comprising a region in which the composition ratio of the carbide gradually increases and a region in which the composition ratio of the carbide gradually decreases in the thickness direction of the buffer layer.
According to claim 1,
The buffer layer,
A copper continuous deposition source comprising a region in which the carbide and a metal component of the metal layer are mixed in a boundary region with the metal layer.
According to claim 1,
The substrate is a copper continuous deposition source, characterized in that formed of a graphite (graphite) material.
According to claim 1,
The base material is formed with a receiving groove having a concave structure,
The copper continuous deposition source, characterized in that the buffer layer and the metal layer are formed in the receiving groove.
According to claim 12,
The copper continuous deposition source, characterized in that the height of the inner wall forming the receiving groove is equal to or greater than the sum of the thicknesses of the metal layer and the buffer layer.

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