KR20200054007A - Polishing slurry composition - Google Patents

Abstract

The present invention relates to a polishing slurry composition capable of securing optical properties in a post process and, more specifically, to a polishing slurry composition comprising: colloidal silica abrasive particles; an oxidizing agent; a metal oxide monomolecular chelating agent; and a water-soluble polymer.

Description

Polishing slurry composition {POLISHING SLURRY COMPOSITION}

The present invention relates to a slurry composition for polishing.

Recently, chemical and mechanical polishing (CMP) processes of various thin films constituting devices have been required in the semiconductor and display industries.

The chemical mechanical polishing (CMP) process refers to a process in which a semiconductor wafer surface is flatly polished using a slurry containing abrasives and various compounds while rotating in contact with the polishing pad. In general, the metal polishing process is known to occur repeatedly by a process in which a metal oxide (MO _x ) is formed by an oxidizing agent and a process in which abrasive particles remove the formed metal oxide.

The integrated circuit is composed of hundreds of active devices formed on or on a silicon support, wherein the shorted active devices are interconnected to form a functional circuit, and each layer of the active devices is connected by a multilevel interconnection method do. The interconnect layer in an integrated circuit generally has a metallization level connected by a first metal layer, an interconnect layer, a second metal layer, an interconnect layer and a third metal layer. Dielectrics, such as doped and undoped silicon dioxide (SiO ₂ ), which are used as interconnect layers, are also used to electrically short metal layers of different levels in silicon supports.

In the fabrication of integrated circuits and other electronic devices, multiple layers of conductive, semiconductive and dielectric materials are deposited on or removed from the surface of the substrate. Thin layers of conductive, semiconducting and dielectric materials can be deposited by numerous deposition techniques. Common deposition techniques in modern processing include physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD) and electrochemical plating (ECP), also known as sputtering.

Because the layer of materials is continuously deposited and removed, the top layer surface of the substrate may not be flat across the surface and requires planarization. Surface planarization, or surface "polishing", is the process of removing material from the surface of a substrate to form a generally flat and planar surface. Planarization is useful for removing undesirable surface morphology and surface defects such as rough surfaces, agglomerated materials, crystal lattices, damage sites, scratches and contaminated layers or contaminated materials. Planarization is also useful for forming features on the substrate by filling the features for subsequent steps of metallization and processing and removing excess deposited material used to provide a flat surface.

In the metal CMP process, it is known that the process of removing the abrasive particles from the oxide film formed by the oxidizing agent occurs repeatedly. In order to improve the polishing rate, the slurry is taken into consideration in order to accelerate the oxidation process or remove the formed oxide film smoothly You design. There is a method to increase the polishing rate by increasing the concentration of oxides that corrode metals easily, but as corrosion increases, corrosion occurs even in areas where wiring layers must be formed for electrical characteristics of devices, such as seam and contact parts. Rather, the reliability and yield of the device may be reduced.

In the process of removing the oxide film formed by the oxidizing agent included in the slurry, physical and chemical actions are considered simultaneously. The physical part is mainly due to the abrasive particles and is related to the concentration or size of the abrasive particles. The higher the concentration of abrasive particles, the faster the polishing rate, but high concentration of abrasive particles causes defects such as scratches and inhibits the dispersion stability of the slurry to shorten the period of use. The size of the abrasive particles is known to have a suitable area, so if it is too small or too large, the polishing rate will decrease.

The present invention is to solve the above problems, to provide a slurry composition for polishing, comprising a colloidal silica abrasive particle, an oxidizing agent, a metal oxide monomolecular complexing agent and a water-soluble polymer.

More specifically, the polishing slurry composition can provide a polishing slurry composition comprising colloidal silica abrasive particles and a complexing agent, which can improve the surface planarization process of thin films applied to semiconductor devices and display devices. have.

However, the problems to be solved by the present invention are not limited to those mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

The polishing slurry composition according to an embodiment of the present invention includes colloidal silica abrasive particles, an oxidizing agent, a metal oxide single molecule complexing agent, and a water-soluble polymer.

According to an embodiment of the present invention, when polishing an oxide film using the polishing slurry composition, the polishing rate for the oxide film may be 100 Å / min to 200 Å / min.

According to one embodiment of the present invention, the metal oxide single molecule complexing agent may be greater than pKa 1.0 and less than 4.5.

According to an embodiment of the present invention, the metal oxide single molecule complexing agent is an acidic compound having 2 to 5 carbon atoms, and is composed of a hydroxy group (-OH), a carbonyl group (C = O), and a carboxylic acid (-COOH). It may be to include two or more functional groups selected from.

According to an embodiment of the present invention, the metal oxide single-molecule complexing agent may be 0.1 wt% to 1.0 wt% of the total polishing slurry composition.

According to one embodiment of the present invention, the metal oxide single molecule complexing agent may include one or more selected from the group consisting of malonic acid, tartaric acid, glyoxylic acid, oxalic acid, lactic acid, and glutaric acid.

According to an embodiment of the present invention, the content of the colloidal silica abrasive particles may be 1% to 10% of the total slurry composition.

According to an embodiment of the present invention, the oxidizing agent, hydrogen peroxide, urea hydrogen peroxide, urea, percarbonate, periodic acid, periodate, perchloric acid, perchlorate, perbromic acid, perbromic acid, perboric acid, perborate, permanganic acid Selected from the group consisting of permanganate, persulfate, bromate, chlorate, chlorite, chromate, iodate, iodic acid, ammonium persulfate, benzoyl peroxide, calcium peroxide, barium peroxide, sodium peroxide and urea peroxide It may be to include one or more.

According to one embodiment of the present invention, the content of the oxidizing agent may be 0.5% to 5% of the total slurry composition.

According to an embodiment of the present invention, the water-soluble polymer is polyacrylic acid, polymethacrylic acid, polyethylene glycol, styrenesulfonic acid, 2-acrylamido-2-methylpropane sulfonic acid (AMPS), vinylsulfonic acid and vinylphosphonic acid, It may include one or more selected from the group consisting of polystyrene sulfonic acid.

According to an embodiment of the present invention, the content of the water-soluble polymer may be 1 ppm to 50 ppm.

According to an embodiment of the present invention, the slurry composition for polishing, FTO (fluorine doped tin oxide, SnO2: F), ITO (indiumtin oxide), IZO (indium zinc oxide), IGZO (indium gallium zinc oxide), AZO (Aldoped ZnO), AGZO (Aluminum Gallium Zinc Oxide), GZO (Ga-doped ZnO), Indium Zinc Tin Oxide (IZTO), Indium Aluminum Zinc Oxide (IZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), SnO ₂ , ZnO, IrO _x , RuO _x and NiO It can be.

According to an embodiment of the present invention, the polishing slurry composition may be applied to a polishing process of a semiconductor device, a display device, or both.

The present invention can provide a polishing slurry composition comprising colloidal silica abrasive particles, an oxidizing agent, a metal oxide monomolecular complexing agent, and a water-soluble polymer.

More specifically, by applying colloidal silica abrasive particles having different primary and secondary particle sizes to secure sufficient polishing amount for each polishing target film, and improving the roughness and haze of the polishing film surface after the polishing process In the post-process, a polishing slurry composition capable of securing optical properties may be provided, and the chemical polishing rate of the metal oxide may be further improved by further including a metal complexing agent, thereby improving the polishing rate of the film to be polished.

In addition, the polishing slurry composition of the present invention is applied to a planarization process of semiconductor devices and display devices by a chemical mechanical polishing process (CMP), and specifically, to a planarization process of inorganic oxide films and inorganic oxide films used in display devices. Can be.

1 is a graph of the polishing rate of slurry compositions prepared according to Examples 1 to 6 and Comparative Examples 1 to 3 of the present invention.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. However, various changes may be made to the embodiments, and the scope of the patent application right is not limited or limited by these embodiments. It should be understood that all modifications, equivalents, or substitutes for the embodiments are included in the scope of rights.

The terms used in the examples are used for illustrative purposes only and should not be construed as limiting. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, the terms "include" or "have" are intended to indicate the presence of features, numbers, steps, actions, components, parts or combinations thereof described herein, one or more other features. It should be understood that the existence or addition possibilities of fields or numbers, steps, operations, components, parts or combinations thereof are not excluded in advance.

Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person skilled in the art to which the embodiment belongs. Terms such as those defined in a commonly used dictionary should be interpreted as having meanings consistent with meanings in the context of related technologies, and should not be interpreted as ideal or excessively formal meanings unless explicitly defined in the present application. Does not.

When an element or layer is denoted as being "on", "connected to", or "coupled to" another element or layer, it is directly another component or layer It can be understood that it can be in a layer, can be connected, can be combined, or there can be intervening elements and layers.

Hereinafter, the polishing slurry composition of the present invention will be described in detail with reference to Examples. However, the present invention is not limited to these examples.

The polishing slurry composition according to an embodiment of the present invention includes colloidal silica abrasive particles, an oxidizing agent, a metal oxide single molecule complexing agent, and a water-soluble polymer.

According to one side, the colloidal silica particles may mean that the amorphous silica fine particles form a colloidal state that is a stable dispersion state in a fluid, and is applied to various applications. For example, a binder for manufacturing inorganic paint , Heat-resistant and optical coatings, CMP (Chemical Mechanical Polishing) slurry for polishing.

According to one side, the colloidal silica abrasive particles may perform not only the function of the abrasive particles in the polishing slurry composition, but also the function of the oxidizing agent to oxidize the metal film at the same time.

According to one side, CMP uses metal wiring such as oxide CMP, aluminum (Al), tungsten (W), and copper (Cu) to form an interlayer dielectric (ILD) depending on the object and purpose of processing. Metal CMP to be formed, and can be classified as a device isolation (STI: shallow trench isolation) CMP that improves the electrical properties between devices and improves its operating characteristics and density. Among them, in the present invention, oxide CMP It may be to use silica abrasive particles used in oxide CMP as a slurry type mainly used in.

According to one side, the polishing characteristics for each particle size of the colloidal silica particles of the primary particles and the secondary particles having different sizes may be different, and an appropriate effect may be exhibited by appropriately mixing them.

According to one side, when the size of the colloidal silica particles is less than 10 nm, the flatness of the polishing target film decreases, excessive defects occur on the surface of the polishing target film, the polishing rate decreases, and when it exceeds 100 nm There may be a difficulty in controlling the flatness, transparency and defects after mechanical polishing because it does not achieve monodispersity. The size may mean diameter, length, thickness, etc., depending on the shape of the particles.

According to one side, the colloidal silica abrasive particles include mixed particles having two or more different sizes of 10 nm to 300 nm in order to improve dispersibility in a slurry, polishing performance of a polishing target film, planarization and transparency. It may be, and preferably, may include primary particles having a first size of 10 nm to 40 nm and secondary particles having a second size of 40 nm to 100 nm.

According to one side, the shape of the colloidal silica abrasive particles may include one or more selected from the group consisting of a spherical shape, a square shape, a needle shape and a plate shape.

According to one side, the colloidal silica abrasive particles, at pH 1 to 12,-1 mV to-100 mV zeta potential, at pH 1 to 6,-10 mV to-70 mV zeta potential or pH 2.5 to 6 to -10 mV to -70 mV. This shows an absolute value of high zeta potential even in the acidic region, and thus has high dispersion stability and can realize excellent polishing power for the polishing target film.

According to one side, the colloidal silica abrasive particles can prepare a polishing slurry composition having high dispersion stability. In addition, the polishing target film, for example, promotes oxidation of the inorganic oxide film to realize high polishing properties that can easily polish the inorganic oxide film, and minimizes scratch defects to improve the flatness and transparency of inorganic oxide films such as ITO. I can do it.

According to one side, the method for producing the colloidal silica particles is not particularly limited as long as it is a particle production method known in the art, and for example, it may be a hydrothermal synthesis method, a sol-gel method, a precipitation method, or a direct oxidation method.

According to one side, as the particle size of the colloidal silica particles increases, the polishing rate may increase, but roughness of the surface to be polished may occur, and problems such as haze reduction may occur.

According to one side, the size of the colloidal silica particles and the degree of agglomeration according to each different size may be factors related to whether or not the surface scratches to be polished are generated. At this time, by controlling the ratio of the degree of aggregation according to the primary particles and secondary particles to an appropriate degree, a polishing slurry composition capable of securing optical properties in a subsequent process by improving the roughness and haze of the abrasive film surface after the polishing process is provided. It can also improve the polishing selectivity, thereby reducing the time of the polishing process and improving productivity.

According to one side, the primary particles and secondary particles can form self-assembly as a preferred method to control the ensemble structure and properties of the abrasive particles, and the primary particles are aggregated with each other to secondary It may be to form particles.

According to one side, when having a specific surface area within the range of 10 m ² / g to 150 m ² / g of the colloidal silica abrasive particles, it can have a relatively low porosity and improve polishing efficiency.

According to one side, the specific surface area of the colloidal silica abrasive particles can be measured by titration using NaOH.

According to one side, the metal oxide single molecule complexing agent may interact with an oxidizing agent to improve polishing results.

According to one side, the metal oxide single-molecule complexing agent may bring a surface roughness improvement effect by combining metal ions that may affect surface roughness through a complexing phenomenon as a complex compound.

According to an embodiment of the present invention, when polishing the oxide film using the polishing slurry composition using the polishing slurry composition, the polishing rate for the oxide film may be 100 Å / min to 200 Å / min.

According to one side, the polishing rate may be to measure the thickness of the oxide film with a wafer thin film coating thickness meter after polishing.

According to one side, the polishing rate may be a value of [the thickness of the wafer before polishing-the thickness of the wafer after polishing] / 1min.

According to one side, if the polishing rate is less than 100 Å / min, there may be a quality deterioration because the sufficient polishing speed and the selection ratio accordingly are not supported, and when it exceeds 200 Å / min, there is a fear of over-etching It can be.

According to one embodiment of the present invention, the metal oxide single molecule complexing agent may be greater than pKa 1.0 and less than 4.5.

According to one side, the metal oxide single-molecule complexing agent not only satisfies the pKa value of 1.0 to 4.5 or less, but also has a carbon number of 2 to 5 or less and / or a polishing rate for the inorganic film of more than 100 Pa / min. At the same time, you may be satisfied.

According to an embodiment of the present invention, the metal oxide single molecule complexing agent is an acidic compound having 2 to 5 carbon atoms, and is composed of a hydroxy group (-OH), a carbonyl group (C = O), and a carboxylic acid (-COOH). It may be to include two or more functional groups selected from.

According to one side, the metal oxide single molecule complexing agent may interact with an oxidizing agent to improve polishing results.

According to one side, the metal oxide single-molecule complexing agent is an acidic compound, preferably, it may be more than pKa 1.0 and 4.5 or less, more preferably, 1.25 or more and 4.3 or less, and at the same time, the number of carbon atoms is 2 to 2 5 or less, the polishing rate for the inorganic film may be more than 100 Å / min.

According to one side, the metal oxide single-molecule complexing agent that satisfies the pKa condition, the number of carbons, and the polishing rate condition for the inorganic film is a complex compound containing metal ions that may affect surface roughness through surface ignition. By combining it can bring about the effect of improving the surface roughness.

According to one side, the metal oxide single-molecule complexing agent may exhibit a relatively high current density value when drawing a coincidence polarization curve according to the oxidant content through electrochemical analysis, which means that the current density value is It can be understood that the higher the corrosion rate, the faster the polishing by oxidation occurs.

According to one side, the metal oxide single molecule complexing agent includes at least two functional groups selected from the group consisting of a hydroxy group (-OH), a carbonyl group (C = O), and a carboxy group (-COOH). The functional group may have oxygen having high electronegativity to attract electrons to have an acidity.

According to one side, when the metal oxide monomolecular complexing agent is used, CMP polishing can continuously chelate the continuously generated metal oxide, thereby continuously re-adsorbing the metal oxide into the metal layer to be polished. Can be prevented.

According to one side, by using the metal oxide single molecule complexing agent, it is possible to continuously increase the polishing rate and reduce surface defects.

According to one side, the metal oxide single-molecule complexing agent may be used alone or may further include an auxiliary complexing agent.

According to an embodiment of the present invention, the metal oxide single-molecule complexing agent may be 0.1 wt% to 1.0 wt% of the total polishing slurry composition.

According to one side, the metal oxide monomolecular complexing agent having a concentration in the above numerical range increases the interaction or reaction effect with the oxidizing agent while maintaining stability in the polishing slurry composition to form a uniform oxide film. May be

According to one embodiment of the present invention, the metal oxide single molecule complexing agent may include one or more selected from the group consisting of malonic acid, tartaric acid, glyoxylic acid, oxalic acid, lactic acid, and glutaric acid.

According to one side, the metal oxide single-molecule complexing agent, when the oxidizing agent oxidizes the metal surface and serves to facilitate polishing, when peroxidation occurs and the passivation layer is excessively generated, the polishing rate and surface roughness decrease. It may be to prevent it.

According to an embodiment of the present invention, the content of the colloidal silica abrasive particles may be 1% to 10% of the total slurry composition.

According to one side, colloidal silica abrasive particles within the numerical range can improve transparency and / or planarization after polishing, and minimize defects such as defects and stretches.

According to an embodiment of the present invention, the oxidizing agent, hydrogen peroxide, urea hydrogen peroxide, urea, percarbonate, periodic acid, periodate, perchloric acid, perchlorate, perbromic acid, perbromic acid, perboric acid, perborate, permanganic acid Selected from the group consisting of permanganate, persulfate, bromate, chlorate, chlorite, chromate, iodate, iodic acid, ammonium persulfate, benzoyl peroxide, calcium peroxide, barium peroxide, sodium peroxide and urea peroxide It may be to include one or more.

According to one side, the oxidizing agent may be preferably hydrogen peroxide.

According to one embodiment of the present invention, the content of the oxidizing agent may be 0.5% to 5% of the total slurry composition.

According to one side, when it corresponds to the oxidizing agent within the above numerical range, it provides an appropriate polishing rate for the polishing target film, and corrosion, erosion and surface hardening of the polishing target film as the content of the oxidizing agent increases Can be prevented.

According to an embodiment of the present invention, the water-soluble polymer is polyacrylic acid, polymethacrylic acid, polyethylene glycol, styrenesulfonic acid, 2-acrylamido-2-methylpropane sulfonic acid (AMPS), vinylsulfonic acid and vinylphosphonic acid, It may include one or more selected from the group consisting of polystyrene sulfonic acid.

According to one side, the water-soluble polymer may preferably be polyacrylic acid, polystyrenesulfonic acid, or both.

According to one side, the water-soluble polymer can be adjusted to enable adjustment of the selectivity to the film to be polished by working with other additives.

According to an embodiment of the present invention, the content of the water-soluble polymer may be 1 ppm to 50 ppm.

According to one side, when the content of the water-soluble polymer is less than 1 ppm, the content of the additive is low, so there is little action on the additive, and when used in excess of 50 ppm, other types of additives added together do not function properly. Adjusting the selection ratio can be difficult.

According to an embodiment of the present invention, the slurry composition for polishing, FTO (fluorine doped tin oxide, SnO2: F), ITO (indiumtin oxide), IZO (indium zinc oxide), IGZO (indium gallium zinc oxide), AZO (Aldoped ZnO), AGZO (Aluminum Gallium Zinc Oxide), GZO (Ga-doped ZnO), Indium Zinc Tin Oxide (IZTO), Indium Aluminum Zinc Oxide (IZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), SnO ₂ , ZnO, IrO _x , RuO _x and NiO It can be.

According to one side, the inorganic oxide film may be preferably ITO (indiumtin oxide).

According to an embodiment of the present invention, the polishing slurry composition may be applied to a polishing process of a semiconductor device, a display device, or both.

According to one side, the planarization process of the semiconductor device and the display device includes indium (In), tin (Sn), silicon (Si), titanium (Ti), vanadium (V), gadolium (Ga), manganese ( Mn), iron (Fe), cobalt (Co), copper (Cu), zinc (Zn), zirconium (Zr), hafnium (Hf), aluminum (Al), niobium (Nb), nickel (Ni), chromium ( Cr), molybdenum (Mo), tantalum (Ta), ruthenium (Ru), tungsten (W), tin (Sn), aluminum (Al), antimony (Sb), Ir (iridium) and Ni (nickel) A nitride film of an element containing at least one selected from the group consisting of, for example, a nitride film such as SiN, a high-k film such as Hf, Ti, and Ta oxides, silicon, amorphous silicon, SiC, SiGe, Ge, It can be further applied to semiconductor films such as GaN, GaP, GaAs, organic semiconductors, phase change films such as GeSbTe, polyimide-based, polybenzoxazole-based, acrylic-based, epoxy-based, phenol-based polymer resin films, and the like.

According to one side, the display element may be a substrate or a panel, and may be a TFT or an organic light emitting display element.

According to one side, the polishing slurry composition, glass, silicon, SiC, SiGe, Ge, GaN, GaP, GaAs, sapphire, plastic, etc. is further selected for the polishing process of a substrate comprising at least one member selected from the group consisting of Can be applied.

Hereinafter, the present invention will be described in more detail by examples and comparative examples.

However, the following examples are only for illustrating the present invention, and the contents of the present invention are not limited to the following examples.

Example 1.

As an abrasive, 0.5% by weight of malonic acid (pKa 2.8) as a metal oxide complexing agent having a colloidal silica of 0.5% content, 0.5% hydrogen peroxide as an oxidizing agent, and 2 to 5 carbon atoms of pKa 4.5 or less was added, and polyacrylic acid and poly as a water-soluble polymer Styrene sulfonic acid was added at a content of 25 ppm.

Example 2.

It was prepared in the same manner as in Example 1, except that tartaric acid (pKa 2.9) was added instead of malonic acid as a metal oxide complexing agent having 2 to 5 carbon atoms having a pKa of 4.5 or less.

Example 3.

It was prepared in the same manner as in Example 1, except that glioxin acid (pKa 3.18) was added instead of malonic acid as a metal oxide complexing agent having 2 to 5 carbon atoms having a pKa of 4.5 or less.

Example 4.

It was prepared in the same manner as in Example 1, except that oxalic acid (pKa 1.25) was added instead of malonic acid as a metal oxide complexing agent having 2 to 5 carbon atoms having a pKa of 4.5 or less.

Example 5.

It was prepared in the same manner as in Example 1, except that lactic acid (pKa 3.83) was added instead of malonic acid as a metal oxide complexing agent having 2 to 5 carbon atoms having a pKa of 4.5 or less.

Example 6.

It was prepared in the same manner as in Example 1, except that glutaric acid (pKa 4.3) was added instead of malonic acid as a metal oxide complexing agent having 2 to 5 carbon atoms having a pKa of 4.5 or less.

Comparative Example 1.

Experiment was performed under the same conditions as in Example 1, but no metal oxide complexing agent was added.

Comparative Example 2.

It was prepared in the same manner as in Comparative Example 1, except that 0.5% by weight of citric acid was added as the metal oxide complexing agent.

Comparative Example 3.

It was prepared in the same manner as in Comparative Example 1, except that 0.5 wt% of isonicotinic acid was added as a metal oxide complexing agent.

The oxide films were polished with the slurry compositions according to Examples 1 to 6 and Comparative Examples 1 to 3, and the polishing rate was measured. The polishing rate was 300 mL, Pressure: 4 psi, and Polishing Time: 1 min.

More specifically, the contents of the pKa values, the number of carbons, and the polishing rate for the inorganic film properties of the metal oxide complexing agents used in Examples 1 to 6 and Comparative Examples 1 to 3 are shown in Table 1 below.

[Table 1]

In the slurry compositions prepared according to Examples 1 to 6, it was confirmed that the metal oxide monomolecular complexing agent added in an appropriate amount interacted with the oxidizing agent to improve the polishing rate.

The above description of the present invention is for illustration only, and those skilled in the art to which the present invention pertains can understand that the present invention can be easily modified into other specific forms without changing the technical spirit or essential features of the present invention. will be. Therefore, it should be understood that the above-described embodiments are illustrative in all respects and not restrictive. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined form.

The scope of the present invention is indicated by the following claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be interpreted to be included in the scope of the present invention.

Claims (13)

Colloidal silica abrasive particles;
Oxidizing agents;
Metal oxide single molecule complexing agents; And
Water-soluble polymers;
Containing,
Polishing slurry composition. According to claim 1,
When polishing the oxide film using the polishing slurry composition, the polishing rate for the oxide film is 100 kPa / min to 200 kPa / min,
Polishing slurry composition. According to claim 1,
The metal oxide single molecule complexing agent,
pKa greater than 1.0 and less than or equal to 4.5,
Polishing slurry composition. According to claim 1,
The metal oxide single molecule complexing agent,
An acidic compound having 2 to 5 carbon atoms,
It includes two or more functional groups selected from the group consisting of hydroxy groups (-OH), carbonyl groups (C = O) and carboxylic acids (-COOH),
Polishing slurry composition. According to claim 1,
The metal oxide single molecule complexing agent,
Is 0.1% by weight to 1.0% by weight of the total polishing slurry composition,
Polishing slurry composition. According to claim 1,
The metal oxide single molecule complexing agent,
It comprises at least one member selected from the group consisting of malonic acid, tartaric acid, glyoxylic acid, oxalic acid, lactic acid and glutaric acid,
Polishing slurry composition. According to claim 1,
The content of the colloidal silica abrasive particles,
It is 1% to 10% of the total slurry composition,
Polishing slurry composition. The method of claim 1.
The oxidizing agent,
Hydrogen peroxide, urea hydrogen peroxide, urea, percarbonate, periodic acid, periodate, perchloric acid, perchlorate, perbromic acid, perbromic acid, perboric acid, perborate, permanganic acid, permanganate, persulfate, bromate, chlorate, chlorite , Chromate, iodate, iodic acid, ammonium peroxide, benzoyl peroxide, calcium peroxide, barium peroxide, sodium peroxide and one or more selected from the group consisting of urea,
Polishing slurry composition. According to claim 1,
The content of the oxidizing agent,
0.5% to 5% of the total slurry composition,
Polishing slurry composition. According to claim 1,
The water-soluble polymer,
Polyacrylic acid, polymethacrylic acid, polyethylene glycol, styrenesulfonic acid, 2-acrylamido-2-methylpropane sulfonic acid (AMPS), vinyl sulfonic acid and vinyl phosphonic acid, containing at least one selected from the group consisting of polystyrene sulfonic acid That,
Polishing slurry composition. According to claim 1,
The content of the water-soluble polymer,
1 ppm to 50 ppm,
Polishing slurry composition. According to claim 1,
The polishing slurry composition,
Fluorine doped tin oxide (FTO), SnO2 (F), indiumtin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), Aldoped ZnO (AZO), Aluminum Gallium Zinc Oxide (AGZO), GZO (Ga -doped ZnO), IZTO (Indium Zinc Tin Oxide), IAZO (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide) , IZON (IZO Nitride), SnO ₂ , ZnO, IrO _x , RuO _x And is applied to the polishing of at least one inorganic oxide film selected from the group consisting of NiO,
Polishing slurry composition. According to claim 1,
The polishing slurry composition,
It is applied to the polishing process of semiconductor devices, display devices, or both,
Polishing slurry composition.

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