KR20200026621A - Semiconductor device package - Google Patents

Abstract

The present invention provides a semiconductor element package with an improved adhesion force. According to an embodiment of the present invention, the semiconductor element package comprises: a substrate; an electrode disposed on the substrate; a semiconductor element disposed on the electrode; and a light-transmitting layer. The substrate includes a light-transmitting hole penetrating the substrate. The light-transmitting layer includes: a first light-transmitting unit disposed on a lower part of the substrate; a second light-transmitting unit disposed in the light-transmitting hole; a third light-transmitting unit overlapping the electrode in a horizontal direction on the substrate; and a fourth light-transmitting unit disposed on the electrode and covering the semiconductor element. An area of the first light-transmitting unit is greater than that of the second light-transmitting unit.

Description

Semiconductor device package {SEMICONDUCTOR DEVICE PACKAGE}

Embodiments relate to a semiconductor device package.

A semiconductor device including a compound such as GaN, AlGaN, etc. has many advantages, such as having a wide and easy to adjust band gap energy, and can be used in various ways as a light emitting device, a light receiving device, and various diodes.

Particularly, light emitting devices such as light emitting diodes or laser diodes using semiconductors of Group 3-5 or Group 2-6 compound semiconductors have been developed through the development of thin film growth technology and device materials. Various colors such as blue and ultraviolet light can be realized, and efficient white light can be realized by using fluorescent materials or by combining colors.Low power consumption, semi-permanent lifespan, and quick response speed compared to conventional light sources such as fluorescent and incandescent lamps can be realized. It has the advantages of safety, environmental friendliness.

In addition, when a light-receiving device such as a photodetector or a solar cell is also manufactured using a group 3-5 or group 2-6 compound semiconductor material of a semiconductor, the development of device materials absorbs light in various wavelength ranges to generate a photocurrent. As a result, light in various wavelength ranges, from gamma rays to radio wavelength ranges, can be used. It also has the advantages of fast response speed, safety, environmental friendliness and easy control of device materials, making it easy to use in power control or microwave circuits or communication modules.

Accordingly, the semiconductor device may replace a light emitting diode backlight, a fluorescent lamp, or an incandescent bulb which replaces a cold cathode tube (CCFL) constituting a backlight module of an optical communication means, a backlight of a liquid crystal display (LCD) display device. Applications are expanding to include white LED lighting devices, automotive headlights and traffic lights, and sensors to detect gas or fire. In addition, the semiconductor device may be extended to high frequency application circuits, other power control devices, and communication modules.

In particular, the light emitting device that emits light in the ultraviolet wavelength region can be used for curing, medical treatment, and sterilization by curing or sterilizing.

Recently, the research on the ultraviolet light emitting device package is active, but the ultraviolet light emitting device is still poor durability, there is a limit that is separated from the package because of low adhesion.

The embodiment provides a semiconductor device package with improved adhesion.

The present invention also provides a semiconductor device package having improved transmittance and resistance to ultraviolet light.

The problem to be solved in the examples is not limited thereto, and the object or effect that can be grasped from the solution means or the embodiment described below will be included.

The semiconductor device package according to the embodiment includes a substrate; An electrode disposed on the substrate; A semiconductor device disposed on the electrode; And a light transmitting layer, wherein the substrate includes a light transmitting hole penetrating through the substrate, and the light transmitting layer includes: a first light transmitting portion disposed below the substrate; A second light transmitting part disposed in the light transmitting hole; A third light transmitting portion overlapping the electrode in a horizontal direction on the substrate; And a fourth light transmitting portion disposed on the electrode and covering the semiconductor element, wherein an area of the first light transmitting portion is larger than that of the second light transmitting portion.

The electrode may include a first electrode part disposed at one side of the substrate; And a second electrode portion spaced apart from the first electrode portion, wherein the first electrode comprises: a first upper electrode disposed on the substrate; A first connection electrode disposed in the electrode hole penetrating the substrate; And a first lower electrode disposed under the substrate, wherein the second electrode comprises: a second upper electrode disposed over the substrate; A second connection electrode disposed in the electrode hole penetrating the substrate; And a second lower electrode disposed under the substrate.

The light transmitting layer may further include a fifth light transmitting part disposed between the first upper electrode and the second upper electrode.

The light transmitting layer comprises an inorganic material, the inorganic material, fluorinated ethylene-propylene (FEP), tetrafluoroethylene hexafluoropropylene vinylidene fluoride (Tetra fluoro ethylene Hexa fluoro propylene vinylidene fluoride (THV).

The semiconductor device may emit light in an ultraviolet wavelength band.

The substrate has a 10-point average roughness of 0.6 μm to 1.0 μm in a region overlapping with the third light transmitting part in a vertical direction.

The substrate may further include an adhesive layer disposed on the substrate and the electrode, and the adhesive layer may include a void.

The adhesive layer may include a graphite sheet.

According to the embodiment, it is possible to implement a semiconductor device package with improved adhesion.

In addition, a semiconductor device package having improved transmittance and resistance to ultraviolet light may be implemented.

The various and advantageous advantages and effects of the present invention are not limited to the above description, and will be more readily understood in the course of describing specific embodiments of the present invention.

1 is a top view of a semiconductor device package according to an embodiment;
FIG. 2 is a cross-sectional view taken along line AA ′ in FIG. 1;
3 is a cross-sectional view taken along line BB ′ of FIG. 1;
4 is a bottom view of a semiconductor device according to an embodiment;
5 is a conceptual diagram of a semiconductor device,
6 is a cross-sectional view of a semiconductor device package according to another embodiment;
7 is a cross-sectional view of a semiconductor device package according to still another embodiment;
8A through 8E are diagrams illustrating a manufacturing procedure of a semiconductor device package according to example embodiments.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

However, the technical spirit of the present invention is not limited to some embodiments described, but may be implemented in various forms, and within the technical spirit of the present invention, one or more of the components between the embodiments may be selectively selected. Can be combined and substituted.

In addition, the terms (including technical and scientific terms) used in the embodiments of the present invention may be generally understood by those skilled in the art to which the present invention pertains, unless specifically defined and described. The terms commonly used, such as terms defined in advance, may be interpreted as meanings in consideration of the contextual meaning of the related art.

In addition, the terms used in the embodiments of the present invention are intended to describe the embodiments and are not intended to limit the present invention.

As used herein, the singular forms may also include the plural unless specifically stated otherwise, and may be combined as A, B, C when described as "at least one (or more than one) of A and B, C". It can include one or more of all possible combinations.

In addition, in describing the components of the embodiment of the present invention, terms such as first, second, A, B, (a), and (b) may be used.

These terms are only to distinguish the components from other components, and the terms are not limited to the nature, order, order, or the like of the components.

And when a component is described as being 'connected', 'coupled' or 'connected' to another component, the component is not only connected, coupled or connected directly to the other component, It may also include the case of 'connected', 'coupled' or 'connected' due to another component between the other components.

In addition, when described as being formed or disposed on the "top" or "bottom" of each component, the top (bottom) or the bottom (bottom) is not only when two components are in direct contact with each other, but also one. It also includes a case where the above-described further components are formed or disposed between two components. In addition, when expressed as "up (up) or down (down)" may include the meaning of the down direction as well as the up direction based on one component.

1 is a top view of a semiconductor device package according to an embodiment, FIG. 2 is a cross-sectional view taken along line AA ′ of FIG. 1, FIG. 3 is a cross-sectional view taken along line BB ′ of FIG. 1, and FIG. 4 is an embodiment of the present invention. Is a bottom view of the semiconductor device, and FIG. 5 is a conceptual diagram of the semiconductor device.

1 to 4, a semiconductor device package according to an embodiment may include a body 110, an electrode 120, a semiconductor device 130, and a light transmitting layer 140.

First, the body 110 may be implemented in a plate shape. The electrode 120, the semiconductor device 130, and the light transmitting layer 140 may be disposed on the body 110. However, the electrode 120 and the light transmitting layer 140 may be disposed below the substrate 110 through the substrate 110 as described below.

The body 110 may include an insulating material or a metal compound having excellent heat dissipation. For example, the body 110 may include a low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC) as an insulating material. In addition, the body 110 may be formed of a resin material such as resin material such as polyphthalamide (PPA). In addition, the body 110 may be formed of a silicone, epoxy resin, or a thermosetting resin including a plastic material, or a high heat resistance and high light resistance material. The body 110 may include aluminum nitride (AlN) or alumina (Al 2 O 3) as a metal compound, and may include a metal oxide having a thermal conductivity of 140 W / mK or more. In addition, the body 110 may include at least one or more of an antioxidant, a light reflector, an inorganic filler, a curing catalyst, a light stabilizer, a lubricant, and titanium dioxide.

The electrode 120 may be disposed on the body 110. More specifically, the electrode 120 may include a first electrode portion 121 and a second electrode portion 122. Furthermore, the electrode 120 may further include a third electrode part 123.

First, the first electrode 121 and the second electrode 122 may be spaced apart from each other to be electrically separated from each other. For example, the first electrode part 121 may be disposed on one side of the body 110, and the second electrode part 122 may be disposed on the other side of the body 110.

The first electrode part 121 and the second electrode part 122 include titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), and platinum (Pt). ), Tin (Sn), silver (Ag), phosphorus (P) may be formed in a single layer or multiple layers containing at least one. For example, silver (Ag) or aluminum (Ag) is formed on the surfaces of the first electrode portion 121 and the second electrode portion 122, thereby improving the reflection efficiency of incident light, thereby increasing the light efficiency. . In addition, the first electrode 121 and the second electrode 122 may include an Au layer to prevent corrosion due to moisture and to improve electrical reliability.

In an exemplary embodiment, a polarity mark may be disposed on either the first electrode portion 221 or the second electrode portion 122. The polarity mark may be formed to be distinguished from the first electrode portion 221 in the upper edge region of the second electrode portion 122. In addition, the polarity mark CP may be positioned on the second electrode part 122 described later. This polar mark may be an anode mark or a cathode mark. However, it is not limited to this position and shape.

The first electrode unit 121 may include a first upper electrode 121a, a first connection electrode 122b, and a first lower electrode 121c. Similarly, the second electrode part 122 may include a second upper electrode 122a, a second connection electrode 122b, and a second lower electrode 122c.

The first upper electrode 121a and the second upper electrode 122a may be disposed on the substrate 110. The first upper electrode 121a and the second upper electrode 122a may be spaced apart from each other to be electrically separated from each other. In addition, the semiconductor device 130 is disposed on the first upper electrode 121a and the second upper electrode 122a, and the semiconductor device 130 includes the first upper electrode 121a and the second upper electrode 122a. And may be electrically connected to each other.

In addition, the substrate 110 may include a plurality of through holes. For example, the substrate 110 may include an electrode hole h1 and a light transmitting hole h2. The electrode hole h1 and the light emitting hole h2 may be plural in number.

The first connection electrode 121b and the second connection electrode 122b may be disposed in the electrode hole h1. Through this, an electrical path between the semiconductor device 130 and the electrode 120 may be made from the top of the substrate 110 to the bottom.

The first lower electrode 121c and the second lower electrode 122c may be disposed under the substrate 110 to be electrically connected to the first connection electrode 121b and the second connection electrode 122b, respectively. The first lower electrode 121c and the second lower electrode 122C may be spaced apart from each other to be electrically separated from each other.

That is, in one embodiment, the first electrode portion 121 and the second electrode portion 122 may be disposed so as not to overlap each other on the upper and lower sides and the inside of the substrate 110. For example, the upper electrode, the connecting electrode, and the lower electrode may be connected in the vertical direction, and the first electrode portion 121 and the second electrode portion 122 may be spaced apart in the horizontal direction. Here, the vertical direction is defined as the direction from the lower side to the upper side of the substrate 110 in the first direction (X-axis direction). The horizontal direction is defined as a direction perpendicular to the first direction in the second direction (Y-axis direction). The third direction (Z-axis direction) is defined as a direction perpendicular to both the first direction and the second direction.

The first upper electrode 121a, the first connection electrode 121b, and the first lower electrode 121c may be made of the same material. However, the present invention is not limited thereto. Similarly, the second upper electrode 122a, the second connection electrode 122b, and the second lower electrode 122c may be made of the same material. In addition, the first electrode 121 and the second electrode 122 may be made of the same material, but are not limited thereto.

The upper electrode 121a, the first connection electrode 121b, and the first lower electrode 121c may include titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), and tantalum ( Ta, platinum (Pt), tin (Sn), silver (Ag), phosphorus (P) may be formed in a single layer or multiple layers containing at least one.

In addition, the electrode 120 may further include a third electrode part 123 as a dummy electrode disposed between the first lower electrode 121c and the second lower electrode 122c under the substrate 110 as described above. Can be. In addition, the third electrode part 123 may be spaced apart from the first lower electrode 121c and the second lower electrode 122c.

In addition, the length of the third electrode unit 123 may be greater than the width of the first lower electrode 121c and the second lower electrode 122c in the second direction. Accordingly, the area of the third electrode part 123 is larger than that of the first lower electrode 121c or the second lower electrode 122c so that heat generated from the substrate 110 can be easily discharged to the outside. That is, the third electrode unit 123 may improve heat dissipation efficiency of the semiconductor device package. In addition, the third electrode part 123 may have the same length as the thickness of the first lower electrode 121c or the first lower electrode 122c in the first direction (described as thickness hereinafter), but is not limited thereto. .

In addition, the third electrode part 123 may be disposed to overlap the semiconductor device 130 in the vertical direction, thereby efficiently dissipating heat generated from the semiconductor device 130.

The first electrode part 121, the second electrode part 122, and the third electrode part 123 may be attached to a predetermined circuit board (not shown) by an adhesive member such as a solder. .

The semiconductor device 130 may be disposed above the body 110. That is, the semiconductor device 130 is disposed above the body 110 and the electrode 12.

Referring to FIG. 5, the semiconductor device 130 emits light. Specifically, the semiconductor device 130 may emit light in the ultraviolet wavelength band. For example, the semiconductor device 130 may output light (UV-A) in the near ultraviolet wavelength band, may output light (UV-B) in the far ultraviolet wavelength band, or light (UVC) in the deep ultraviolet wavelength band. You can output For example, the light of the near ultraviolet wavelength range (UV-A) may have a wavelength in the range of 320 nm to 420 nm, the light of the far ultraviolet wavelength range (UV-B) may have a wavelength in the range of 280 nm to 320 nm, deep ultraviolet Light in the wavelength band (UV-C) may have a wavelength in the range of 100nm to 280nm.

The substrate 131 may be disposed on the semiconductor device 130. The semiconductor device 130 according to the embodiment may include a substrate 131, a first conductivity type semiconductor layer 132, an active layer 133, and a second conductivity type semiconductor layer 134. Each semiconductor layer may have an aluminum composition so as to emit light in the ultraviolet wavelength range. The wavelength range may be determined by the composition ratio of Al of the light emitting structure including the first conductive semiconductor layer 132, the active layer 133, and the second conductive semiconductor layer 134.

The substrate 131 includes a conductive substrate 131 or an insulating substrate 131. The substrate 131 may be a material or a carrier wafer suitable for growing a semiconductor material. The substrate 131 may be formed of a material selected from sapphire (Al 2 O 3), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto.

A buffer layer (not shown) may be further provided between the first conductive semiconductor layer 132 and the substrate 131. The buffer layer may mitigate lattice mismatch between the light emitting structure provided on the substrate 131 and the substrate 131.

The first conductive semiconductor layer 132 may be formed of a compound semiconductor such as a III-V group or a II-VI group, and the first dopant may be doped into the first conductive semiconductor layer 132. The first conductive semiconductor layer 132 is a semiconductor material having a composition formula of Inx1Aly1Ga1-x1-y1N (0 ≦ x1 ≦ 1, 0 ≦ y1 ≦ 1, 0 ≦ x1 + y1 ≦ 1), for example, GaN, AlGaN, InGaN, InAlGaN and the like can be selected. The first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductive semiconductor layer 132 doped with the first dopant may be an n-type semiconductor layer.

The active layer 133 is a layer where electrons (or holes) injected through the first conductive semiconductor layer 132 meet holes (or electrons) injected through the second conductive semiconductor layer 134. The active layer 133 transitions to a low energy level as electrons and holes recombine, and may generate light having a wavelength corresponding thereto. The active layer 133 may have any one of a single well structure, a multi well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum line structure, and the active layer 133. The structure of is not limited to this.

The second conductivity type semiconductor layer 134 is formed on the active layer 133, and may be implemented as a compound semiconductor such as a group III-V group or a group II-VI. Dopants may be doped. The second conductive semiconductor layer 134 may be a semiconductor material having a composition formula of Inx5Aly2Ga1-x5-y2N (0≤x5≤1, 0≤y2≤1, 0≤x5 + y2≤1) or AlInN, AlGaAs, GaP, GaAs , GaAsP, AlGaInP may be formed of a material selected from. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductive semiconductor layer 134 doped with the second dopant may be a p-type semiconductor layer.

The semiconductor device 130 may further include a first electrode pad 135 and a second electrode pad 136. The first electrode pad 135 may be electrically connected to the first conductive semiconductor layer 132, and the second electrode pad 136 may be electrically connected to the second conductive semiconductor layer 134. To this end, the first electrode pad 135 may be disposed on the first conductive semiconductor layer 132, and the second electrode pad 136 may be disposed on the second conductive semiconductor layer 134.

The first electrode pad 135 and the second electrode pad 136 may include various conductive metals. For example, the first electrode pad 135 and the second electrode pad 136 may include Cu, Pt, Al, Au, Ag, or the like. However, it is not limited to these materials.

In FIG. 5, a structure of a flip-type semiconductor device is disclosed, but the above-described semiconductor device 130 may have various structures such as a lateral, vertical, and flip type.

Referring back to FIGS. 1 through 4, the light transmitting layer 140 may be disposed on the body 110 and may include a cavity C in which the semiconductor device 130 is disposed. The light transmission layer 140 may be disposed in the shape of a cap C on the lower surface coupled with the body 110. Since the semiconductor device 130 is disposed in the cavity C, the width of the cavity C may be greater than or equal to the width of the semiconductor device 130. However, it is not limited to this structure.

According to the structure of the light-transmitting layer 140 described above, the light-transmitting layer 140 may be disposed to surround the upper surface and the side surface of the semiconductor device 130. Accordingly, the light emitted by the semiconductor device 130 may be output not only through the upper surface of the light transmitting layer 140 but also through the side surface. Therefore, the light emitting device package 100 according to an embodiment provides an effect of increasing the light emitting area.

In addition, the light transmission layer 140 may be implemented through an inorganic material, and may be implemented with a material capable of transmitting light in the ultraviolet wavelength range. The inorganic material may be a fluorine polymer. Specifically, polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), polyvinylidene fluoride (PVDF), chlorotrifluoroethylene (Ethylene chlorotrifluoroethylene, ECTFE), ethylene tetrafluoro ethylene (FEFE), perfluoroalkoxy (PFA), fluorinated ethylene-propylene (FEP), tetrafluoroethylene hexafluoropropylene vinylidene fluorine It may include at least one of a ride (Tetra fluoro ethylene Hexa fluoro propylene Vinylidene fluoride, THV). In particular, in the case of FEP and THV, both the transmittance to ultraviolet light and the adhesion to the substrate are high, thereby improving performance and durability of the light emitting device package 100.

More specifically, the light transmitting layer 140 may include a first light transmitting part 141, a second light transmitting part 142, a third light transmitting part 143, and a fourth light transmitting part 144.

First, the first light transmitting part 141 may be disposed under the substrate 110. The first light transmitting part 141 may be disposed between the first lower electrode 121c and the third electrode part 123 or between the second lower electrode 122c and the third electrode part 123. In addition, the first light transmitting part 141 may be disposed between the first lower electrode 121c and the second lower electrode 122c in a structure without the third electrode part 123.

For example, the first light transmitting part 141 may include a 1-1 light transmitting part 141a and a 1-2 second light emitting part 141b. In addition, the first-first light transmitting part 141a may be disposed between the first lower electrode 121c and the third electrode part 123. In addition, the 1-2th light transmitting part 141b may be disposed between the second lower electrode 122c and the third electrode part 123. In this case, the 1-2th light transmitting part 141a and the 1-2th light transmitting part 141b may be symmetrically disposed with respect to the third electrode part 123. In this configuration, the semiconductor device package may improve the reliability of the package since the light transmitting part 140 maintains the bonding force between the substrates 110 while surrounding the semiconductor device 130.

In addition, the first light transmitting part 141 may extend in the third direction. Accordingly, the first light transmitting part 141 may have a length equal to a length in the third direction with the first lower electrode 121c and the third electrode 123 in the third direction. However, it is not limited to this structure.

The first light transmitting part 141 may be larger than the area of the second light transmitting part 142. That is, the first light transmitting part 141 may be larger than the size of the light transmitting hole h2. By such a configuration, the light transmitting layer 140 may improve the bonding force with the substrate 110 through the first light transmitting part 141. In addition, the first light transmitting part 141 may improve reliability of the semiconductor device package.

In addition, the first light transmitting part 141 is located inside the first lower electrode 121c and the second lower electrode 122c and has a bonding force with the semiconductor element 130 positioned inside the first light transmitting part 141. As a result, the phenomenon in which the semiconductor device 130 is moved may be prevented.

The second light transmitting part 142 may be disposed in the light transmitting hole h2 penetrating the substrate 110 and the electrode 120. The light transmission hole h2 may be disposed to penetrate both the substrate 110 and the electrode 120. In addition, the light transmission hole h2 may be disposed to penetrate the substrate 110. The light transmission hole h2 may be located inside the electrode hole h1 (a position closer to the semiconductor device than the electrode hole h1), and the second light transmission part 142 may be disposed therein.

The light transmission hole h2 may be positioned at the center of each of the first upper electrode 121a and the second upper electrode 122a. In addition, the center part means an area located at the center when the electrode is divided into three equal parts in the width or length direction. Accordingly, the bonding force between the light transmitting layer 140 and the substrate 110 and the electrode 120 can be maintained in a balanced manner. However, the structure of the present invention is not limited thereto, and the light emitting hole h2 may be provided in plural in each of the first upper electrode 121a and the second upper electrode 122a, and may be disposed at various positions.

The third light transmitting part 143 may be disposed on the substrate 110 to overlap the first and second upper electrodes 121a and 122a in a horizontal direction. The third light transmitting part 143 may be disposed at the edge of the substrate 110. That is, the third light transmitting part 143 may be disposed outside the first upper electrode 121a and the second upper electrode 122a. In addition, the third light transmitting part 143 may be disposed to surround the electrode 120 on a plane (ZY plane). By this structure, the third light transmitting part 143 may improve the bonding force between the electrode 120 and the substrate 110 to improve the reliability of the semiconductor device package.

The fourth light transmitting part 144 may be disposed on the substrate 110 and the electrode 120. As described above, the fourth light transmitting part 144 may include a cavity C in which the semiconductor device 130 is disposed. The fourth light projector 143 is disposed on the first light projector 141, the second light projector 142, and the third light projector 143, and the first light projector 141 and the second light projector ( 142 and the third light transmitting part 143.

The area of the fourth light projector 144 may be larger than that of each of the first light projector 141, the second light projector 142, and the third light projector 143. By such a configuration, the fourth light transmitting part 144 easily fixes the semiconductor element 130 on the substrate 110 and the electrode 120, and also improves the bonding force between the substrate 110 and the electrode 120. Can be.

In addition, the light transmitting layer 140 may further include a fifth light transmitting part 145 to further increase the adhesion of the substrate. The fifth light transmitting part 145 may be disposed under the semiconductor device 130 and between the first upper electrode 121a and the second upper electrode 122a. That is, the fifth light transmitting part 145 may be disposed to overlap the semiconductor device 130 in the vertical direction, thereby further improving the coupling force to the semiconductor device 130.

6 is a cross-sectional view of a semiconductor device package according to another embodiment, and FIG. 7 is a cross-sectional view of a semiconductor device package according to another embodiment.

Referring to FIG. 6, a semiconductor device package according to another embodiment may include a body 110, an electrode 120, a semiconductor device 130, and a light transmitting layer 140 of the semiconductor device package according to the above-described embodiment. Can be. In this case, the light transmitting layer 140 may not include the first light transmitting portion 141 and the second light transmitting portion 142. However, the present invention is not limited thereto, and the semiconductor device package described above may include the above configuration.

In this case, the substrate 110 may have a surface roughness Rz of about 0.6 μm to about 1.0 μm in a region in contact with the light transmitting layer 140. That is, the substrate 110 may have a ten-point average roughness Rz in the above range in the region overlapping with the third light transmitting part 143 in the vertical direction.

As a result, the surface area of the upper surface 110a of the substrate 110 may be increased than that of other regions, and thus the area of the substrate 110 and the light transmitting layer 140 may be increased. Due to this, the bonding force can also be improved.

In addition, when the light-transmitting layer 140 is made of a resin as described above, the transmittance and resistance to light in the ultraviolet wavelength band are high, but the bonding force with the substrate 110 may not be strong. Accordingly, the semiconductor device package according to another embodiment may easily prevent peeling and abrasion by improving the bonding force between the substrate 110 and the light transmitting layer 140. In addition, the top surface 110a of the substrate 110 may adjust a ten point average roughness using a method such as sandblast.

Referring to FIG. 7, a semiconductor device package according to another embodiment includes a body 110, an electrode 120, a semiconductor device 130, and a light transmitting layer 140 in the semiconductor device package according to another embodiment described above. can do. The semiconductor device package according to another embodiment may further include an adhesive layer 150.

The adhesive layer 150 may be disposed on the body 110 and the electrode 120. Specifically, the adhesive layer 150 may be disposed between the body 110 and the light transmitting layer 140 and between the electrode 120 and the light transmitting layer 140 to fix the position of the light transmitting layer 140. Since the cavity C is present in the light transmitting layer 140, the adhesive layer 150 may be disposed in an area in which the body 110 and the light transmitting layer 140 contact or in an area in which the electrode 120 and the light transmitting layer 140 contact. Can be.

The adhesive layer 150 may be generated through thermocompression bonding. Specifically, the adhesive layer 150 may be generated by melting the contact portion of the body 110 and the light transmitting layer 140 through thermocompression bonding. In this case, thermocompression may be performed at a temperature below the melting point of the light transmitting layer 140.

In the semiconductor device package according to another embodiment, since the transparent layer 140 is melted to arrange the adhesive layer 150, the light emitting area of the light emitting device package 100 may be increased.

In addition, when the light emitted from the semiconductor device 130 is light in the ultraviolet region, the organic bonding material may be decomposed by the ultraviolet light, and thus the coupling between the components may be separated, but the adhesive layer 150 according to the embodiment of the present invention may be ultraviolet light. Since it is made of the same material as the light-transmissive layer 140 that is resistant to the light, it is possible to prevent the separation of the light-transmitting layer 140 and the body 110.

The adhesive layer 150 may include a graphite sheet. Accordingly, the adhesive layer 150 may have improved resistance to ultraviolet light. In addition, the adhesive layer 150 may include a void P. In addition, the adhesive layer 150 may improve the bonding force between the light transmitting layer 140 and the adhesive layer 150 by moving the resin of the light transmitting layer 140 to the space P by the air gap P. In addition, even when the adhesive layer 150 is bonded to the substrate 110 on the substrate 110, the adhesive force with the substrate 110 may be improved by the surface area increased by the voids P.

8A through 8E are diagrams illustrating a manufacturing process of a semiconductor device package according to example embodiments.

8A and 8B, the plate-shaped substrate 110 may be disposed. In addition, the electrode 120 may be disposed on the substrate 110. As described above, the substrate 110 may include an electrode hole h1. The electrode 120 includes a first electrode portion 121 and a second electrode portion 122 spaced apart from each other, and the first electrode portion 121 is disposed on one side of the substrate 110 and the second electrode. The part 122 may be disposed on the other side of the substrate 110. More specifically, the first upper electrode 121a may be disposed on one side of the substrate 110, and the first lower electrode 121c may be disposed on one side of the substrate 110. The first connection electrode 121b may be disposed in the electrode hole h1 positioned at one side of the substrate 110. Similar to the first electrode 121, the second upper electrode 122a may be disposed on the other side of the substrate 110, and the second lower electrode 122c may be disposed on the other side of the substrate 110. The second connection electrode 122b may be disposed in the electrode hole h1 positioned on the other side of the substrate 110. In addition, the third electrode part 123 may also be disposed under the substrate 110.

8C and 8D, a light transmitting hole h2 penetrating the substrate 110 and the electrode 120 may be formed. The light transmission hole h2 may be disposed inside the electrode hole h1.

The semiconductor device 130 may be disposed on the first upper electrode 121a and the second upper electrode 121b. The first electrode of the semiconductor device 130 may be electrically connected to the first upper electrode 121a, and the second electrode may be electrically connected to the second upper electrode 121b. However, it is not limited to this structure.

Referring to FIG. 8E, the resin of the film may be thermocompressed and melted to form the light transmitting layer 140 through the light transmitting hole h2. The light transmitting layer 140 may be disposed between the first lower electrode 121c and the third electrode part 123 and between the second lower electrode 122c and the third electrode part 123. At this time, the light transmitting layer 140 may be formed using a structure such as a jig so that the molten resin does not flow to the outside. In this manner, the light transmitting layer 140 may be disposed under the substrate 110, inside the substrate 110 (eg, inside the light transmitting hole h2), on the substrate 110, and on the electrode 120. The light transmitting layer 140 may include a fifth light transmitting part 145 disposed under the semiconductor device 130 and disposed between the first upper electrode 122a and the second upper electrode 122a. In addition, the light transmitting layer 140 may be formed to have a predetermined cavity (c) to surround the semiconductor device 130.

According to the method of manufacturing a semiconductor device package according to an embodiment, the electrode 120 and the semiconductor device 130 are disposed on the body 110, the light-transmitting layer 140 is adhered to the substrate 110, and the like and then packaged. Can be diced. Thus, the process is simplified. In addition, defect rates and costs in the process can be reduced and manufacturing time can be significantly reduced.

The light emitting device package may be used as a light source for curing a resin, a resist, a SOD, or a SOG. Alternatively, the light emitting device package may be used for medical treatment or sterilization such as an air purifier or a water purifier.

However, the present invention is not limited thereto, and the above-described light emitting device package may be used as a light source of an illumination system.

When used as a backlight unit of an image display device can be used as an edge type backlight unit or a direct type backlight unit, when used as a light source of the lighting device may be used as a luminaire or bulb type, and also used as a light source of a mobile terminal It may be.

Claims (8)

Board;
An electrode disposed on the substrate;
A semiconductor device disposed on the electrode; And
Including a light transmitting layer;
The substrate includes a light transmitting hole penetrating the substrate,
The light transmitting layer,
A first light transmitting part disposed under the substrate;
A second light transmitting part disposed in the light transmitting hole;
A third light transmitting portion overlapping the electrode in a horizontal direction on the substrate; And
And a fourth light transmitting part disposed on the electrode and covering the semiconductor device.
The area of the first light transmitting portion is larger than the area of the second light transmitting portion.
The method of claim 1,
The electrode,
A first electrode part disposed on one side of the substrate; And
And a second electrode portion spaced apart from the first electrode portion.
The first electrode,
A first upper electrode disposed on the substrate;
A first connection electrode disposed in the electrode hole penetrating the substrate; And
A first lower electrode disposed under the substrate;
The second electrode,
A second upper electrode disposed on the substrate;
A second connection electrode disposed in the electrode hole penetrating the substrate; And
And a second lower electrode disposed under the substrate.
The method of claim 2,
The light transmitting layer,
The semiconductor device package further comprises a fifth light transmitting part disposed between the first upper electrode and the second upper electrode.
The method of claim 1,
The light transmitting layer comprises an inorganic material,
The inorganic material,
A light emitting device package comprising at least one of fluorinated ethylene-propylene (FEP) and tetrafluoroethylene hexafluoropropylene vinylidene fluoride (THV).
The method of claim 1,
The semiconductor device,
A light emitting device package that emits light in the ultraviolet wavelength range.
The method of claim 1,
The substrate has a 10-point average roughness of 0.6 μm to 1.0 μm in a region overlapping with the third light transmitting part in a vertical direction.
The method of claim 1,
Further comprising an adhesive layer disposed on the substrate and the electrode,
The adhesive layer is a semiconductor device package including a gap.
The method of claim 7, wherein
The adhesive layer is a semiconductor device package including a graphite sheet (Graphite sheet).

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